A process for improving surface defects of photomask IC chip quartz substrate

Abstract

The present invention discloses a process for improving the surface defects of a quartz substrate for a photomask IC chip, which relates to the technical field of quartz substrates. The process aims to solve the problem in the prior art that the surface defects of quartz substrates cannot be effectively improved from material selection to manufacturing to later quality control. The present application uses three methods: visual inspection, automatic optical inspection, and laser scanning inspection to achieve multi-dimensional inspection from macro to micro, from surface to structure, ensuring the accuracy and comprehensiveness of defect identification. By setting clear defect classification standards and maximum defect ranges, defects that may affect product performance can be discovered and handled in a timely manner. The surface laser repair method is suitable for shallow defects, while the internal ion implantation repair method can effectively handle deep defects. The diversified repair strategies increase the flexibility and adaptability of the process, and avoid unnecessary material waste and processing costs through precise repair.

Description

Technical Field

[0001] The present invention relates to the technical field of quartz substrates, in particular to a process for improving surface defects of a photomask IC chip quartz substrate. Background Art

[0002] When manufacturing photomask IC chip quartz substrates, certain quality requirements are imposed on the surface of the quartz substrates. For example, Chinese Patent Publication No. CN112630233B discloses a substrate surface defect inspection method, which mainly uses a first inspection workbench 50 to determine the presence or absence of defects, the location of the defective area containing the defects, and its size based on the image captured by the line array camera 51, and stores the image in a computer (PC) 80. In addition, the image captured by the line array camera 51 is displayed on the display unit 81 of the computer 80. From the perspective of work efficiency, the defect inspection process for the entire surface of the aluminum substrate 20 in the first inspection workbench 50 is preferably performed in less than 5 seconds. In the first inspection workbench 50, a line array camera 51 capable of capturing images with a resolution of less than 20μm / pixel per pixel is used, thereby enabling the detection of defects larger than 30μm. Furthermore, the image from the line scan camera 51 can identify the aforementioned defects and grinding marks caused by the PVA grindstone on the surface of the aluminum substrate 20, and can accurately extract the defective area. Although the aforementioned patent solves the problem of surface defect inspection, the following problems still exist in actual operation:

[0003] 1. The photomask IC chip quartz substrate is not effectively controlled and judged from the initial material selection to the process manufacturing process, resulting in surface defects during the quartz substrate manufacturing process.

[0004] 2. The quartz substrates for photomask IC chips that have been manufactured were not subjected to more rigorous defect inspections, and targeted repair decisions were not made based on the defects, resulting in an increased scrap rate for the quartz substrates.

[0005] 3. Targeted defect repair was not performed based on the specific conditions of the surface defects of each photomask IC chip quartz substrate, resulting in the inability to further improve the surface defects. Summary of the Invention

[0006] The purpose of the present invention is to provide a process for improving the surface defects of the quartz substrate of the photomask IC chip. Through three methods of visual inspection, automatic optical inspection and laser scanning inspection, multi-dimensional detection from macro to micro and from surface to structure is realized, ensuring the accuracy and comprehensiveness of defect identification. By setting clear defect classification standards and maximum defect ranges, defects that may affect product performance can be discovered and handled in a timely manner. The surface laser repair method is suitable for shallow defects, while the internal ion implantation repair method can effectively handle deep defects. The diversified repair strategies increase the flexibility and adaptability of the process. Unnecessary material waste and processing costs are avoided through precise repair, which can solve the problems in the existing technology.

[0007] To achieve the above object, the present invention provides the following technical solutions:

[0008] A process for improving surface defects of a photomask IC chip quartz substrate comprises the following steps:

[0009] S1: Material selection and processing: Before manufacturing the photomask quartz substrate, the material of the quartz substrate is selected first. After the selection is completed, the quartz substrate is processed to obtain basic material data;

[0010] S2: Manufacturing optimization: Carry out process manufacturing based on basic material data and monitor the process manufacturing process in real time;

[0011] S3: Finished product inspection: The manufactured quartz substrate is inspected, and the defect data of the quartz substrate is confirmed based on the inspection results. The defect data is sorted into defect parameters, and after the defect parameters are sorted, the material repair data is obtained;

[0012] S4: Finished product repair: Confirm the repair type according to the material repair data, and repair the defects of the quartz substrate according to different repair types. After the defect repair is completed, a standard photomask IC chip quartz substrate is obtained.

[0013] Preferably, the material of the quartz substrate is selected in S1, and after the selection is completed, the quartz substrate is processed, including:

[0014] Obtain the manufacturing requirements of the photomask IC chip quartz substrate from the database and confirm the key factors of the quartz substrate material according to the production requirements;

[0015] Among them, the key factors include the purity, uniformity, transparency, thermal expansion coefficient, mechanical strength, surface flatness and smoothness, chemical stability and optical uniformity of the quartz substrate;

[0016] After confirming the quartz substrate material based on key factors, the quartz substrate material is sampled and tested;

[0017] After the test is qualified, batch purchase will be carried out. If the test fails, the quartz substrate material will be reselected.

[0018] Preferably, with respect to selecting the material of the quartz substrate in S1, processing the quartz substrate after the selection is completed further includes:

[0019] Cut the quartz substrate that has passed the test according to manufacturing requirements;

[0020] Polishing the cut quartz substrate using a precision polishing machine;

[0021] After polishing, use ultrapure water, ultrasonic cleaner and special cleaning agent to clean the quartz substrate;

[0022] After cleaning, use high-purity nitrogen to dry the quartz substrate;

[0023] The quartz substrate is blown dry to obtain substrate material data.

[0024] Preferably, the process manufacturing is performed according to the basic material data in S2, and the process manufacturing process is monitored in real time, including:

[0025] The process manufacturing process of quartz substrate is:

[0026] S201: Coating and baking: Before coating the quartz substrate, wipe the substrate with a dust-free cloth, pure water, and isopropyl alcohol. After wiping, confirm the coating method according to the process requirements in the manufacturing requirements; the process requirements include pattern size, coating thickness, and uniformity. The coating methods include roll coating, drop coating, spray coating, and spin coating.

[0027] During the coating process, adjust the pressure of the glue roller, the depth of the dropper or the spray parameters of the spray gun according to the process requirements;

[0028] After the quartz substrate is coated, it is preheated and baked. The baking temperature is between 90℃ and 120℃. The baking time is between 5 minutes and 30 minutes. At the same time, hot air circulation is carried out during the baking process.

[0029] S202: Exposure and development: After the quartz substrate is baked, it is subjected to exposure processing. The exposure machine is a stepper or scanner, and key parameters of the exposure machine are set, including exposure energy, exposure time, focal length, and alignment accuracy.

[0030] Load the baked quartz substrate onto the wafer stage of the exposure machine and align it. After alignment is completed, start the exposure machine to perform exposure scanning;

[0031] Immersing the exposed quartz substrate in a developing solution and stirring it during the developing process;

[0032] After development, the quartz substrate is rinsed with ionized water and then dried using hot air drying.

[0033] S203: Etching: Selecting an etching method for the dried quartz substrate according to process requirements, wherein the etching method includes wet etching and dry etching;

[0034] After the etching method is confirmed, the quartz substrate is immersed in the etching solution, which is a hydrofluoric acid aqueous solution;

[0035] Before the quartz substrate is penetrated, the temperature, concentration and etching time of the etching solution are confirmed;

[0036] The temperature of the etching solution is between 25°C and 40°C; the concentration is 5%; and the etching time is between 30 seconds and 5 minutes.

[0037] After the quartz substrate is etched, an organic solution is used to dissolve the photosensitive resin, wherein the organic solution is isopropyl alcohol;

[0038] After dissolving the photosensitive adhesive, the quartz substrate is sprayed with a solvent to remove the photosensitive adhesive;

[0039] S204: Cleaning: After removing the photosensitive adhesive from the quartz substrate, the substrate is cleaned using a plasma cleaning machine. Before cleaning, the parameters of the plasma cleaning machine are set.

[0040] Among them, the parameters of the plasma cleaning machine include power, pressure and gas flow rate; the power is between 100W-500W; the pressure is between 50mTorr-200mTorr; the gas flow rate is between 50sccm-200sccm;

[0041] After cleaning, the quartz substrate is purged with nitrogen;

[0042] After the purge is completed, the quartz substrate is rinsed with deionized water, wherein the temperature of the deionized water is between 30°C and 50°C, and the rinsing time is between 30 seconds and 5 minutes;

[0043] The rinsed quartz substrate is subjected to hot air drying treatment, and a manufactured photomask IC chip quartz substrate is obtained after the hot air drying treatment.

[0044] Preferably, the process of manufacturing according to the basic material data in S2 and real-time monitoring of the manufacturing process also includes:

[0045] Collect data for each step of the quartz substrate manufacturing process;

[0046] Wherein, the online particle data, coating thickness data, temperature data and hot air circulation data in step S201 are collected;

[0047] Collecting the exposure parameter data, alignment accuracy data, development process data, and rinse quality data in step S202;

[0048] Collect the etching solution parameter data, etching time data and etching depth data in step S203;

[0049] Collect the plasma cleaning parameter data, cleaning effect data, drying process data, and purge and rinse data in step S204;

[0050] The collected data is transmitted to the controller for data analysis, and the process parameters are adjusted when the collected data is not within the preset standard data range.

[0051] Preferably, the quartz substrate manufactured in S3 is inspected, defect data of the quartz substrate is confirmed according to the inspection results, and the defect data is sorted into defect parameters, including:

[0052] Inspecting the manufactured quartz substrate, wherein the inspection methods include visual inspection, automatic optical inspection and laser scanning inspection;

[0053] Visual inspection is a preliminary inspection using a low-magnification optical microscope to identify obvious defects on the quartz substrate. A secondary inspection using a high-magnification optical microscope is then performed to identify minor defects on the quartz substrate. Obvious defects include scratches, cracks, foreign matter, vacuum, and areas with uneven refractive index; minor defects include minor scratches, microcracks, pattern deviations, surface contamination, and local structural abnormalities.

[0054] Automatic optical inspection is to quickly scan the quartz substrate, identify obvious defects, and then conduct detailed scanning of the obvious defects;

[0055] Laser scanning detection uses a laser scanner to measure the height of the pattern on the quartz substrate and the verticality of the pattern sidewall, and analyze the roughness of the quartz substrate surface;

[0056] After all quartz substrates are inspected, the inspection data are integrated to obtain material defect data.

[0057] Preferably, the quartz substrate manufactured in S3 is inspected, defect data of the quartz substrate is confirmed according to the inspection result, and the defect data is sorted into defect parameters, which further includes:

[0058] Defect classification is performed based on material defect data. Defect classification is based on the shape, size, location and depth of the defect;

[0059] Shapes include particles, cracks, stains and edge defects; sizes include micro defects, small defects, medium defects and large defects, among which micro defects are less than 10 microns, small defects are between 10-50 microns, medium defects are between 50-200 microns, and large defects are greater than 200 microns; positions include midline areas, edge areas and functional areas; depths include surface defects, shallow defects and deep defects.

[0060] Preferably, the quartz substrate manufactured in S3 is inspected, defect data of the quartz substrate is confirmed according to the inspection result, and the defect data is sorted into defect parameters, which further includes:

[0061] The quartz substrate is repaired or discarded according to the defect classification;

[0062] When the degree of defect exceeds the maximum defect range, the manufactured quartz substrate is discarded;

[0063] When the degree of defect does not exceed the maximum defect range, the manufactured quartz substrate is repaired;

[0064] The repaired quartz substrate is marked as material repair data.

[0065] Preferably, the repair type is confirmed according to the material repair data in S4, and the defects of the quartz substrate are repaired according to different repair types, including:

[0066] The repair method is confirmed based on the defect depth in the material repair data. When the defect depth is between 10 nanometers and 100 nanometers, the surface laser repair method is used for repair; when the defect depth exceeds 100 nanometers, the internal ion implantation repair method is used for repair;

[0067] The surface laser repair process is to select laser parameters based on the material repair data. Laser parameters include laser wavelength, power, pulse width, repetition frequency and scanning speed.

[0068] Before laser repair of the repaired quartz substrate, the laser repair equipment is calibrated and the defect position is aligned. After alignment, the laser is started and the defect area is irradiated according to the selected laser parameters. The irradiation time and energy are controlled. The irradiation time is between 10ns-500ns and the energy is between 1mJ-10mJ.

[0069] After the irradiation is completed, a repaired defective quartz substrate is obtained.

[0070] Preferably, the step of confirming the repair type according to the material repair data in S4 and repairing the defects of the quartz substrate according to different repair types further includes:

[0071] The internal ion implantation repair process is to select the ion type according to the material repair data, wherein the ion types include boron, phosphorus, arsenic and silicon;

[0072] The selected ions are accelerated in a vacuum, wherein the energy of boron is between 10keV and 100keV; the energy of phosphorus is between 100keV and 500keV; the energy of arsenic is between 200keV and 1MeV; and the energy of silicon is between 500keV and 5MeV;

[0073] Implanting the accelerated energy ions into the defect depth and area of ​​the defective quartz substrate;

[0074] The quartz substrate after ion implantation is subjected to heat treatment, and the quartz substrate is cleaned after the heat treatment;

[0075] After cleaning is completed, a repaired defective quartz substrate is obtained;

[0076] Finally, the quartz substrate repaired by the internal ion implantation repair method and the quartz substrate repaired by the surface laser repair method are used as photomask IC chip quartz substrates with improved surface defects.

[0077] Compared with the prior art, the present invention has the following beneficial effects:

[0078] 1. The present invention provides a process for improving surface defects of quartz substrates for photomasks and IC chips. By collecting substrate material data, a detailed material archive and process parameter library can be established, providing strong support for subsequent production process optimization and quality control. The manufacturing process, from cleaning, coating, exposure and development, etching to cleaning and drying, is carefully designed and strictly controlled at each step, ensuring process stability and repeatability, thereby effectively reducing the incidence of surface defects.

[0079] 2. The present invention provides a process for improving the surface defects of quartz substrates for photomasks IC chips. Through three methods, namely visual inspection, automatic optical inspection, and laser scanning inspection, the process realizes multi-dimensional inspection from macro to micro and from surface to structure, thereby ensuring the accuracy and comprehensiveness of defect identification. By setting clear defect classification standards and maximum defect ranges, defects that may affect product performance can be discovered and handled in a timely manner, thereby reducing the scrap rate and improving the product qualification rate.

[0080] 3. The present invention provides a process for improving the surface defects of a photomask IC chip quartz substrate. The surface laser repair method is suitable for shallow defects, while the internal ion implantation repair method can effectively handle deep defects. This diversified repair strategy increases the flexibility and adaptability of the process. The laser repair method, with its high efficiency and rapidity, can significantly shorten the repair cycle and avoid unnecessary material waste and processing costs through precise repair. BRIEF DESCRIPTION OF THE DRAWINGS

[0081] Figure 1 Schematic diagram of the steps for improving the surface defects of the quartz substrate of the photomask IC chip of the present invention;

[0082] Figure 2 It is a schematic diagram of the process of improving the surface defects of the quartz substrate of the photomask IC chip of the present invention. DETAILED DESCRIPTION

[0083] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0084] In order to solve the problem that the existing technology does not effectively control and judge the process from the initial material selection to the manufacturing process of the photomask IC chip quartz substrate, which leads to surface defects during the manufacturing process of the quartz substrate, please refer to Figure 1 and Figure 2 , this embodiment provides the following technical solutions:

[0085] A process for improving surface defects of a photomask IC chip quartz substrate comprises the following steps:

[0086] S1: Material selection and processing: Before manufacturing the photomask quartz substrate, the material of the quartz substrate is selected first. After the selection is completed, the quartz substrate is processed to obtain basic material data;

[0087] Among them, by collecting substrate material data, a detailed material archive and process parameter library can be established, providing strong support for subsequent production process optimization and quality control;

[0088] S2: Manufacturing optimization: Carry out process manufacturing based on basic material data and monitor the process manufacturing process in real time;

[0089] Among them, each step of the entire process is carefully designed and strictly controlled to ensure the stability and repeatability of the process;

[0090] S3: Finished product inspection: The manufactured quartz substrate is inspected, and the defect data of the quartz substrate is confirmed based on the inspection results. The defect data is sorted into defect parameters, and after the defect parameters are sorted, the material repair data is obtained;

[0091] Among them, through effective defect classification and treatment, the number of defects and quality problems on the surface of quartz substrates can be significantly reduced;

[0092] S4: Finished product repair: Confirm the repair type based on the material repair data, and repair the defects of the quartz substrate according to different repair types. After the defect repair is completed, a standard photomask IC chip quartz substrate is obtained;

[0093] Among them, unnecessary material waste and processing costs are avoided through precise repair.

[0094] The material of the quartz substrate is selected in S1. After the selection is completed, the quartz substrate is processed, including:

[0095] Obtain the manufacturing requirements of the photomask IC chip quartz substrate from the database and confirm the key factors of the quartz substrate material according to the production requirements;

[0096] Among them, the key factors include the purity, uniformity, transparency, thermal expansion coefficient, mechanical strength, surface flatness and smoothness, chemical stability and optical uniformity of the quartz substrate;

[0097] After confirming the quartz substrate material based on key factors, the quartz substrate material is sampled and tested;

[0098] After the test is qualified, batch purchase will be carried out. If the test fails, the quartz substrate material will be reselected.

[0099] Cut the quartz substrate that has passed the test according to manufacturing requirements;

[0100] Polishing the cut quartz substrate using a precision polishing machine;

[0101] After polishing, use ultrapure water, ultrasonic cleaner and special cleaning agent to clean the quartz substrate;

[0102] After cleaning, use high-purity nitrogen to dry the quartz substrate;

[0103] The quartz substrate is blown dry to obtain substrate material data.

[0104] Specifically, by comprehensively considering multiple key factors, such as the purity, uniformity, and transparency of the quartz substrate, the fundamental quality of the selected material is ensured. These factors directly impact the substrate's performance during the subsequent manufacturing process, such as light transmittance and thermal stability, thereby reducing surface defects caused by material problems. Sample testing before bulk purchase can promptly identify and resolve potential material issues, avoiding large-scale substrate defects caused by material quality issues, improving production efficiency and yield. The use of precision equipment for cutting and polishing ensures the dimensional accuracy and surface finish of the quartz substrates. Precise cutting reduces physical defects such as edge chipping, while high-quality polishing further enhances the substrate's surface smoothness and reduces light scattering and defects caused by surface roughness. Using high-purity nitrogen to blow dry the substrates prevents water stains and recontamination, while also reducing surface tension variations that can occur during natural drying, thereby maintaining the substrate's surface flatness and smoothness. By collecting substrate material data, a detailed material profile and process parameter library can be established, providing strong support for subsequent production process optimization and quality control. This helps to continuously improve the manufacturing quality and consistency of substrates and reduce the occurrence of surface defects.

[0105] In S2, process manufacturing is performed based on basic material data, and the process manufacturing process is monitored in real time, including:

[0106] The process manufacturing process of quartz substrate is:

[0107] S201: Coating and baking: Before coating the quartz substrate, wipe the substrate with a dust-free cloth, pure water, and isopropyl alcohol. After wiping, confirm the coating method according to the process requirements in the manufacturing requirements; the process requirements include pattern size, coating thickness, and uniformity. The coating methods include roll coating, drop coating, spray coating, and spin coating.

[0108] During the coating process, adjust the pressure of the glue roller, the depth of the dropper or the spray parameters of the spray gun according to the process requirements;

[0109] After the quartz substrate is coated, it is preheated and baked. The baking temperature is between 90℃ and 120℃. The baking time is between 5 minutes and 30 minutes. At the same time, hot air circulation is carried out during the baking process.

[0110] S202: Exposure and development: After the quartz substrate is baked, it is subjected to exposure processing. The exposure machine is a stepper or scanner, and key parameters of the exposure machine are set, including exposure energy, exposure time, focal length, and alignment accuracy.

[0111] Load the baked quartz substrate onto the wafer stage of the exposure machine and align it. After alignment is completed, start the exposure machine to perform exposure scanning;

[0112] Immersing the exposed quartz substrate in a developing solution and stirring it during the developing process;

[0113] After development, the quartz substrate is rinsed with ionized water and then dried using hot air drying.

[0114] S203: Etching: Selecting an etching method for the dried quartz substrate according to process requirements, wherein the etching method includes wet etching and dry etching;

[0115] After the etching method is confirmed, the quartz substrate is immersed in the etching solution, which is a hydrofluoric acid aqueous solution;

[0116] Before the quartz substrate is penetrated, the temperature, concentration and etching time of the etching solution are confirmed;

[0117] The temperature of the etching solution is between 25°C and 40°C; the concentration is 5%; and the etching time is between 30 seconds and 5 minutes.

[0118] After the quartz substrate is etched, an organic solution is used to dissolve the photosensitive resin, wherein the organic solution is isopropyl alcohol;

[0119] After dissolving the photosensitive adhesive, the quartz substrate is sprayed with a solvent to remove the photosensitive adhesive;

[0120] S204: Cleaning: After removing the photosensitive adhesive from the quartz substrate, the substrate is cleaned using a plasma cleaning machine. Before cleaning, the parameters of the plasma cleaning machine are set.

[0121] Among them, the parameters of the plasma cleaning machine include power, pressure and gas flow rate; the power is between 100W-500W; the pressure is between 50mTorr-200mTorr; the gas flow rate is between 50sccm-200sccm;

[0122] After cleaning, the quartz substrate is purged with nitrogen;

[0123] After the purge is completed, the quartz substrate is rinsed with deionized water, wherein the temperature of the deionized water is between 30°C and 50°C, and the rinsing time is between 30 seconds and 5 minutes;

[0124] The rinsed quartz substrate is subjected to hot air drying treatment, and a manufactured photomask IC chip quartz substrate is obtained after the hot air drying treatment.

[0125] Specifically, use dust-free cloth, pure water and isopropyl alcohol detergent to strictly wipe the substrate to effectively remove impurities and oil on the surface of the substrate, ensure the cleanliness of the substrate before coating, and reduce surface defects caused by impurities. Adjust the coating method (roll coating, drop coating, spray coating, spin coating) and corresponding parameters (such as coating roller pressure, dropper speed, spraying parameters) according to process requirements to ensure the uniformity of the coating and avoid surface unevenness and defects caused by uneven coating. Use a high-precision exposure machine (step or scanning exposure machine) and achieve high-precision exposure processing by setting key parameters such as exposure energy, time, focal length and alignment accuracy. The stirring and rinsing steps in the development process further ensure the development effect and reduce defects caused by uneven development. Select the appropriate etching method (wet or dry) according to needs, and strictly control the temperature of the etching solution. The degree, concentration and etching time ensure the accuracy and consistency of etching, reduce surface defects caused by improper etching, use organic solvents (such as isopropyl alcohol) to dissolve the photosensitive adhesive, and use solvent spray to completely remove the photosensitive adhesive, further improving the cleanliness and flatness of the substrate surface. A plasma cleaner is used for cleaning. By adjusting parameters such as power, pressure and gas flow, efficient and thorough cleaning effects are achieved, removing residues and tiny particles on the substrate surface. Deionized water rinsing and hot air drying are used to further improve the cleanliness and dryness of the substrate, avoiding surface problems caused by residual moisture. The entire process flow, from cleaning, coating, exposure and development, etching to cleaning and drying, each step is carefully designed and strictly controlled to ensure the stability and repeatability of the process, thereby effectively reducing the incidence of surface defects.

[0126] Collect data for each step of the quartz substrate manufacturing process;

[0127] Wherein, the online particle data, coating thickness data, temperature data and hot air circulation data in step S201 are collected;

[0128] Collecting the exposure parameter data, alignment accuracy data, development process data, and rinse quality data in step S202;

[0129] Collect the etching solution parameter data, etching time data and etching depth data in step S203;

[0130] Collecting the plasma cleaning parameter data, cleaning effect data, drying process data, and purge and rinse data in step S204;

[0131] The collected data is transmitted to the controller for data analysis, and the process parameters are adjusted when the collected data is not within the preset standard data range.

[0132] Specifically, by collecting real-time data on key parameters in each step from S201 to S204 (such as online particles, coating thickness, temperature, exposure parameters, alignment accuracy, development process, etching solution parameters, etching time, etching depth, plasma cleaning parameters, etc.), the production status can be fed back instantly to ensure that each process link is within the predetermined standard. When the collected data is not within the preset standard data range, the system can automatically or prompt to adjust the process parameters, thereby effectively reducing deviations in the production process and improving product consistency and yield. Through precise control of process parameters, defects generated in the manufacturing process of quartz substrates, such as particle contamination, uneven coating, exposure deviation, and uneven etching depth, can be significantly reduced, thereby improving the overall quality of the product. In particular, in the surface defect improvement process of quartz substrates for photomasks and IC chips, data collection and analysis help optimize key steps such as annealing and polishing, further improving the surface flatness and optical properties of the substrate. By precisely controlling process parameters, waste caused by deviations in the production process can be reduced, thereby reducing production costs.

[0133] In order to solve the problem in the prior art that the finished photomask IC chip quartz substrate is not subjected to more rigorous defect detection and targeted repair judgment based on the defects, which leads to an increase in the waste rate of the quartz substrate, please refer to Figure 1 and Figure 2 , this embodiment provides the following technical solutions:

[0134] The quartz substrate manufactured in S3 is inspected, and the defect data of the quartz substrate is confirmed based on the inspection results. The defect data is then sorted into defect parameters, including:

[0135] Inspecting the manufactured quartz substrate, wherein the inspection methods include visual inspection, automatic optical inspection and laser scanning inspection;

[0136] Visual inspection is a preliminary inspection using a low-magnification optical microscope to identify obvious defects on the quartz substrate. A secondary inspection using a high-magnification optical microscope is then performed to identify minor defects on the quartz substrate. Obvious defects include scratches, cracks, foreign matter, vacuum, and areas with uneven refractive index; minor defects include minor scratches, microcracks, pattern deviations, surface contamination, and local structural abnormalities.

[0137] Automatic optical inspection is to quickly scan the quartz substrate, identify obvious defects, and then conduct detailed scanning of the obvious defects;

[0138] Laser scanning detection uses a laser scanner to measure the height of the pattern on the quartz substrate and the verticality of the pattern sidewall, and analyze the roughness of the quartz substrate surface;

[0139] After all quartz substrates are inspected, the inspection data are integrated to obtain material defect data.

[0140] Specifically, the system combines visual inspection, automated optical inspection, and laser scanning inspection to achieve multi-dimensional inspection from macro to micro, from surface to structure. This comprehensive inspection strategy ensures accurate and comprehensive defect identification, effectively identifying everything from obvious scratches and chips to subtle scratches and microcracks. Both automated optical inspection and laser scanning utilize rapid scanning technology, significantly improving inspection efficiency. Automated optical inspection, in particular, identifies obvious defects through an initial rapid scan and then performs detailed scans of these areas, avoiding unnecessary repeated inspections and increasing inspection speed while ensuring quality. Laser scanning inspection provides high-precision measurements, including analysis of pattern height, sidewall verticality, and surface roughness. This precise data provides a deep understanding of the nature and extent of defects, providing strong support for subsequent defect analysis and remediation measures. Regular analysis of defect data can identify potential problems and bottlenecks in the manufacturing process, allowing targeted improvement measures to be taken. This data-driven decision-making approach helps continuously improve the manufacturing quality of quartz substrates, reduce defective product rates, and significantly enhance the quality stability of quartz substrates, thereby improving the overall performance of IC chips and enhancing the market competitiveness of products.

[0141] Defect classification is performed based on material defect data. Defect classification is based on the shape, size, location and depth of the defect;

[0142] Shape includes particles, cracks, stains and edge defects; size includes micro defects, small defects, medium defects and large defects, among which micro defects are less than 10 microns, small defects are between 10-50 microns, medium defects are between 50-200 microns, and large defects are greater than 200 microns; location includes centerline area, edge area and functional area; depth includes surface defects, shallow defects and deep defects;

[0143] The quartz substrate is repaired or discarded according to the defect classification;

[0144] When the degree of defect exceeds the maximum defect range, the manufactured quartz substrate is discarded;

[0145] When the degree of defect does not exceed the maximum defect range, the manufactured quartz substrate is repaired;

[0146] The repaired quartz substrate is marked as material repair data.

[0147] Specifically, by detailed classification of defects by shape, size, location, and depth, more precise treatment measures can be taken for different types of defects. This refined classification helps improve the efficiency and accuracy of defect handling and avoid unnecessary resource waste. By setting clear defect classification standards (such as size and depth) and maximum defect ranges, defects that may affect product performance can be promptly discovered and addressed, thereby reducing scrap rates and improving product qualification rates. For defects that do not exceed the maximum defect range, repair measures are taken rather than direct disposal, saving material costs and demonstrating efficient resource utilization. At the same time, differentiated repair strategies can be developed based on different defect types to ensure repair effectiveness. Through effective defect classification and treatment, the number of defects and quality issues on the quartz substrate surface can be significantly reduced, thereby improving overall product quality and reliability. This is particularly important for the manufacturing of high-precision products such as photomasks and IC chips. By analyzing and summarizing defect data, potential problems and bottlenecks in the production process can be identified, thereby promoting process improvements and technological innovation. This is of great significance for improving the production efficiency and competitiveness of enterprises. By prioritizing repair rather than direct disposal of defective products, waste generation is reduced.

[0148] In order to solve the problem that the existing technology does not carry out targeted defect repair according to the specific situation of each photomask IC chip quartz substrate surface defect, which leads to the problem that the surface defects cannot be further improved, please refer to Figure 1 and Figure 2 , this embodiment provides the following technical solutions:

[0149] Confirm the repair type based on the material repair data in S4, and repair the quartz substrate defects according to different repair types, including:

[0150] The repair method is confirmed based on the defect depth in the material repair data. When the defect depth is between 10 nanometers and 100 nanometers, the surface laser repair method is used for repair; when the defect depth exceeds 100 nanometers, the internal ion implantation repair method is used for repair;

[0151] The surface laser repair process is to select laser parameters based on the material repair data. Laser parameters include laser wavelength, power, pulse width, repetition frequency and scanning speed.

[0152] Before laser repair of the repaired quartz substrate, the laser repair equipment is calibrated and the defect position is aligned. After alignment, the laser is started and the defect area is irradiated according to the selected laser parameters. The irradiation time and energy are controlled. The irradiation time is between 10ns-500ns and the energy is between 1mJ-10mJ.

[0153] After the irradiation is completed, a defective quartz substrate is obtained that has been repaired;

[0154] The internal ion implantation repair process is to select the ion type according to the material repair data, wherein the ion types include boron, phosphorus, arsenic and silicon;

[0155] The selected ions are accelerated in a vacuum, wherein the energy of boron is between 10keV and 100keV; the energy of phosphorus is between 100keV and 500keV; the energy of arsenic is between 200keV and 1MeV; and the energy of silicon is between 500keV and 5MeV;

[0156] Implanting the accelerated energy ions into the defect depth and area of ​​the defective quartz substrate;

[0157] The quartz substrate after ion implantation is subjected to heat treatment, and the quartz substrate is cleaned after the heat treatment;

[0158] After cleaning is completed, a repaired defective quartz substrate is obtained;

[0159] Finally, the quartz substrate repaired by the internal ion implantation repair method and the quartz substrate repaired by the surface laser repair method are used as photomask IC chip quartz substrates with improved surface defects.

[0160] Specifically, by precisely measuring the defect depth, the most appropriate repair method (surface laser repair or internal ion implantation repair) is selected. This approach ensures the most appropriate treatment is taken based on the severity of the defect, thereby improving the accuracy and efficiency of the repair. Two different repair methods are provided for defects of different depths. The surface laser repair method is suitable for shallow defects, while the internal ion implantation repair method is effective for deep defects. This diverse repair strategy increases process flexibility and adaptability. The laser repair method, with its high efficiency and rapidity, can significantly shorten the repair cycle. Furthermore, the ion implantation repair method accelerates energy in a vacuum, ensuring efficient energy utilization and reducing energy waste. Both surface laser repair and internal ion implantation repair can effectively remove or reduce defects on the quartz substrate, thereby improving the overall quality of the photomask IC chip. This is of great significance for improving product performance, stability, and reliability. After the ion implantation repair, heat treatment and cleaning steps further remove any remaining impurities and stress, enhancing the physical and chemical stability of the quartz substrate, thereby improving the reliability and durability of the entire process. Precise repair avoids unnecessary material waste and processing costs. At the same time, the efficient repair process also reduces production cycle and labor costs, thereby improving the overall economic benefits.

[0161] It should be noted that, in this document, relational terms such as first and second, etc., are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the terms "comprises," "comprising," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that includes a list of elements includes not only those elements but also other elements not explicitly listed, or elements inherent to such process, method, article, or apparatus.

[0162] While the embodiments of the present invention have been shown and described, it will be apparent to those skilled in the art that various changes, modifications, substitutions, and alterations can be made to the embodiments without departing from the principles and spirit of the invention.

Claims

1. A process for improving surface defects of a photomask IC chip quartz substrate, characterized in that: The steps include: S1: Material selection and processing: Before manufacturing the photomask quartz substrate, the material of the quartz substrate is selected first. After the selection is completed, the quartz substrate is processed to obtain basic material data; S2: Manufacturing optimization: Carry out process manufacturing based on basic material data and monitor the process manufacturing process in real time; S3: Finished product inspection: The manufactured quartz substrate is inspected, and the defect data of the quartz substrate is confirmed based on the inspection results. The defect data is sorted into defect parameters, and after the defect parameters are sorted, the material repair data is obtained; S4: Finished product repair: Confirm the repair type based on the material repair data, and repair the defects of the quartz substrate according to different repair types. After the defect repair is completed, a standard photomask IC chip quartz substrate is obtained; For S2: Production optimization: The process manufacturing process of quartz substrate is: S201: Coating and baking: After the quartz substrate is coated, it is preheated and baked, wherein the baking temperature is between 90° C. and 120° C.; the baking time is between 5 minutes and 30 minutes; at the same time, hot air circulation is performed during the baking process; S202: exposure and development; S203: Etching: After the etching method is confirmed, the quartz substrate is immersed in an etching solution, which is a hydrofluoric acid aqueous solution; Before the quartz substrate is penetrated, the temperature, concentration and etching time of the etching solution are confirmed; The temperature of the etching solution is between 25°C and 40°C; the concentration is 5%; and the etching time is between 30 seconds and 5 minutes. For S3: Finished product inspection: Inspecting the manufactured quartz substrate, wherein the inspection methods include visual inspection, automatic optical inspection and laser scanning inspection; Visual inspection is a preliminary inspection using a low-magnification optical microscope to identify obvious defects on the quartz substrate. A secondary inspection using a high-magnification optical microscope is then performed to identify minor defects on the quartz substrate. Obvious defects include scratches, cracks, foreign matter, vacuum, and areas with uneven refractive index; minor defects include minor scratches, microcracks, pattern deviations, surface contamination, and local structural abnormalities. Automatic optical inspection is to quickly scan the quartz substrate, identify obvious defects, and then conduct detailed scanning of the obvious defects; Laser scanning detection uses a laser scanner to measure the height of the pattern on the quartz substrate and the verticality of the pattern sidewall, and analyze the roughness of the quartz substrate surface; After all quartz substrates are inspected, the inspection data are integrated to obtain material defect data; For S4: Finished product repair: The repair method is confirmed based on the defect depth in the material repair data. When the defect depth is between 10 nanometers and 100 nanometers, the surface laser repair method is used for repair; when the defect depth exceeds 100 nanometers, the internal ion implantation repair method is used for repair; The surface laser repair process is to select laser parameters based on the material repair data. Laser parameters include laser wavelength, power, pulse width, repetition frequency and scanning speed. Before laser repair of the repaired quartz substrate, the laser repair equipment is calibrated and the defect position is aligned. After alignment, the laser is started and the defect area is irradiated according to the selected laser parameters. The irradiation time and energy are controlled. The irradiation time is between 10ns and 500ns, and the energy is between 1mJ and 10mJ. After the irradiation is completed, a repaired defective quartz substrate is obtained.

2. The process for improving surface defects of a photomask IC chip quartz substrate according to claim 1, characterized in that: The material of the quartz substrate is selected in S1. After the selection is completed, the quartz substrate is processed, including: Obtain the manufacturing requirements of the photomask IC chip quartz substrate from the database and confirm the key factors of the quartz substrate material according to the production requirements; Among them, the key factors include the purity, uniformity, transparency, thermal expansion coefficient, mechanical strength, surface flatness and smoothness, chemical stability and optical uniformity of the quartz substrate; After confirming the quartz substrate material based on key factors, the quartz substrate material is sample tested; After the test is qualified, batch purchase will be carried out. If the test fails, the quartz substrate material will be reselected.

3. A process for improving surface defects of a photomask IC chip quartz substrate according to claim 2, characterized in that: The material of the quartz substrate is selected in S1, and after the selection is completed, the quartz substrate is processed, which also includes: Cut the quartz substrate that has passed the test according to manufacturing requirements; Polishing the cut quartz substrate using a precision polishing machine; After polishing, use ultrapure water, ultrasonic cleaner and special cleaning agent to clean the quartz substrate; After cleaning, use high-purity nitrogen to dry the quartz substrate; The quartz substrate is blown dry to obtain substrate material data.

4. The process for improving surface defects of a photomask IC chip quartz substrate according to claim 1, wherein: In S2, process manufacturing is performed based on basic material data, and the process manufacturing process is monitored in real time, including: The process of manufacturing quartz substrate also includes: S201: Coating and baking: Before coating the quartz substrate, wipe the substrate with a dust-free cloth, pure water, and isopropyl alcohol. After wiping, confirm the coating method according to the process requirements in the manufacturing requirements; the process requirements include pattern size, coating thickness, and uniformity. The coating methods include roll coating, drop coating, spray coating, and spin coating. During the coating process, adjust the pressure of the glue roller, the dripping speed of the dropper or the spraying parameters of the spray gun according to the process requirements; S202: Exposure and development: After the quartz substrate is baked, it is subjected to exposure processing. The exposure machine is a stepper or scanner, and key parameters of the exposure machine are set, including exposure energy, exposure time, focal length, and alignment accuracy. Load the baked quartz substrate onto the wafer stage of the exposure machine and align it. After alignment is completed, start the exposure machine to perform exposure scanning; Immersing the exposed quartz substrate in a developing solution and stirring it during the developing process; After development, the quartz substrate is rinsed with ionized water and then dried using hot air drying. S203: Etching: Selecting an etching method for the dried quartz substrate according to process requirements, wherein the etching method includes wet etching and dry etching; After the quartz substrate is etched, an organic solution is used to dissolve the photosensitive resin, wherein the organic solution is isopropyl alcohol; After dissolving the photosensitive adhesive, the quartz substrate is sprayed with a solvent to remove the photosensitive adhesive; S204: Cleaning: After removing the photosensitive adhesive from the quartz substrate, the substrate is cleaned using a plasma cleaning machine. Before cleaning, the parameters of the plasma cleaning machine are set. Among them, the parameters of the plasma cleaning machine include power, pressure and gas flow rate; the power is between 100W-500W; the pressure is between 50mTorr-200mTorr; the gas flow rate is between 50sccm-200sccm; After cleaning, the quartz substrate is purged with nitrogen; After the purge is completed, the quartz substrate is rinsed with deionized water, wherein the temperature of the deionized water is between 30°C and 50°C, and the rinsing time is between 30 seconds and 5 minutes; The rinsed quartz substrate is subjected to hot air drying treatment, and a manufactured photomask IC chip quartz substrate is obtained after the hot air drying treatment.

5. The process for improving surface defects of a photomask IC chip quartz substrate according to claim 4, characterized in that: In S2, manufacturing is performed based on basic material data, and the manufacturing process is monitored in real time. This also includes: Collect data for each step of the quartz substrate manufacturing process; Wherein, the online particle data, coating thickness data, temperature data and hot air circulation data in step S201 are collected; Collecting the exposure parameter data, alignment accuracy data, development process data, and rinse quality data in step S202; Collect the etching solution parameter data, etching time data and etching depth data in step S203; Collecting the plasma cleaning parameter data, cleaning effect data, drying process data, and purge and rinse data in step S204; The collected data is transmitted to the controller for data analysis, and the process parameters are adjusted when the collected data is not within the preset standard data range.

6. A process for improving surface defects of a photomask IC chip quartz substrate according to claim 5, characterized in that: The quartz substrate manufactured in S3 is inspected, the defect data of the quartz substrate is confirmed based on the inspection results, and the defect data is sorted into defect parameters, which also includes: Defect classification is performed based on material defect data. Defect classification is based on the shape, size, location and depth of the defect; Shapes include particles, cracks, stains and edge defects; sizes include micro defects, small defects, medium defects and large defects, among which micro defects are less than 10 microns, small defects are between 10-50 microns, medium defects are between 50-200 microns, and large defects are greater than 200 microns; positions include midline areas, edge areas and functional areas; depths include surface defects, shallow defects and deep defects.

7. A process for improving surface defects of a photomask IC chip quartz substrate according to claim 6, characterized in that: The quartz substrate manufactured in S3 is inspected, the defect data of the quartz substrate is confirmed based on the inspection results, and the defect data is sorted into defect parameters, which also includes: The quartz substrate is repaired or discarded according to the defect classification; When the degree of defect exceeds the maximum defect range, the manufactured quartz substrate is discarded; When the degree of defect does not exceed the maximum defect range, the manufactured quartz substrate is repaired; The repaired quartz substrate is marked as material repair data.

8. The process for improving surface defects of a photomask IC chip quartz substrate according to claim 7, characterized in that: Confirm the repair type based on the material repair data in S4, and repair the defects of the quartz substrate according to different repair types, which also includes: The internal ion implantation repair process is to select the ion type according to the material repair data, wherein the ion types include boron, phosphorus, arsenic and silicon; The selected ions are accelerated in a vacuum, wherein the energy of boron is between 10keV and 100keV; the energy of phosphorus is between 100keV and 500keV; the energy of arsenic is between 200keV and 1MeV; and the energy of silicon is between 500keV and 5MeV; Implanting the accelerated energy ions into the defect depth and area of ​​the defective quartz substrate; The quartz substrate after ion implantation is subjected to heat treatment, and the quartz substrate is cleaned after the heat treatment; After cleaning is completed, a repaired defective quartz substrate is obtained; Finally, the quartz substrate repaired by the internal ion implantation repair method and the quartz substrate repaired by the surface laser repair method are used as photomask IC chip quartz substrates with improved surface defects.

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