Preparation method of optical information storage device and storage device

Abstract

The invention provides a preparation method of an optical information storage device and a storage device, and particularly relates to the technical field of semiconductors, and the preparation method comprises the steps: carrying out the spin coating of optical cement on the surface of an inorganic wide bandgap material, and forming a first optical cement layer; exposing the first optical cement layer according to the first pattern; wherein the first optical information is stored in the first pattern; developing the exposed first optical cement layer to generate a first mask; and first ion implantation is carried out on the inorganic wide band gap material with the first mask, an implanted element is used as a light-emitting color center to be implanted into the inorganic wide band gap material, the implanted element directly replaces an element in the inorganic wide band gap material, and a target device used for storing optical information is obtained.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor technology, and more specifically, to a method for preparing an optical information storage device and a storage device. Background Art

[0002] In the information age, data storage has become an important foundation for the development of various industries. Currently, commonly used information storage media include disks and solid-state hard drives, which have the risk of demagnetization and leakage. However, information such as literary works, historical documents, and archival materials have low access frequencies and require long-term storage. Magnetic storage and electronic storage solutions are limited by storage life and energy consumption issues and are not suitable for the storage of such information. However, optical information storage can avoid the above disadvantages.

[0003] Currently, commonly used optical information storage devices, such as optical discs, mostly rely on spin coating organic materials on the substrate surface and using lasers to induce changes in the refractive index of the organic materials to achieve optical information storage. Since the surface organic materials are easily damaged, the robustness of this storage method is poor; and information writing is carried out by laser direct writing, which is not conducive to large-scale rapid preparation.

[0004] Therefore, there is an urgent need for a method for preparing a high-density optical information storage device with large-scale preparation capability. Summary of the invention

[0005] In view of this, the present disclosure provides a method for preparing an optical information storage device and an optical information storage device.

[0006] One aspect of the present disclosure provides a method for preparing an optical information storage device, comprising: spin coating photoresist on the surface of an inorganic wide bandgap material to form a first photoresist layer; exposing the first photoresist layer according to a first pattern; wherein first optical information is stored in the first pattern; developing the exposed first photoresist layer to generate a first mask; performing a first ion implantation on the inorganic wide bandgap material with the first mask to implant an implanted element as a luminescent color center into the inorganic wide bandgap material, wherein the implanted element directly replaces the element in the inorganic wide bandgap material to obtain a target device for storing optical information.

[0007] According to an embodiment of the present disclosure, the inorganic wide bandgap material includes diamond, the implanted element includes rare earth ions, the energy range of the rare earth ions includes: 10-400 keV; the dose range of the rare earth ions includes: e 12 -e 15 ions / cm 2 .

[0008] According to an embodiment of the present disclosure, the inorganic wide bandgap material includes silicon, the implanted element includes carbon, the energy range of the carbon element includes: 10-400 keV; the dose range of the carbon element includes: e 13 -e 16 ions / cm 2 .

[0009] According to an embodiment of the present disclosure, the above method also includes: debonding the inorganic wide bandgap material after the first ion implantation to obtain the inorganic wide bandgap material after debonding; positioning the above inorganic wide bandgap material after debonding through an overlay process to obtain the positioned inorganic wide bandgap material; spin-coating the positioned inorganic wide bandgap material with photoresist to form a second photoresist layer; exposing the above second photoresist layer according to a second pattern; wherein the second optical information is stored in the above second pattern; developing the exposed second photoresist layer to generate a second mask; performing a second ion implantation on the inorganic wide bandgap material with the second mask to obtain the above target device; wherein the type of implanted element and / or the dose of the implanted element are different from those of the first ion implantation.

[0010] According to an embodiment of the present disclosure, the second ion implantation and the first ion implantation have different implantation elements, so as to achieve spectrum multiplexing of the optical information storage device.

[0011] According to an embodiment of the present disclosure, the dosage of the implanted element in the second ion implantation is different from that in the first ion implantation, so as to realize multiplexing of the fluorescent grayscale of the optical information storage device.

[0012] According to an embodiment of the present disclosure, the method further comprises: annealing the inorganic wide bandgap material after the first ion implantation to enhance the fluorescence effect generated by the implanted element as a luminescent color center in the inorganic wide bandgap material.

[0013] According to an embodiment of the present disclosure, the method further includes: stripping the inorganic wide bandgap material after annealing to generate an inorganic thin film; stacking the inorganic thin film in layers to obtain the target device; wherein the inorganic thin film is used as an information storage substrate.

[0014] According to an embodiment of the present disclosure, information is read out from the above optical information storage device by a confocal fluorescence microscope imaging method.

[0015] Another aspect of the present disclosure provides an optical information storage device prepared according to the above method.

[0016] According to the embodiments of the present disclosure, the mask preparation process can be used to realize large-scale preparation of optical information storage devices, which overcomes the problem that the laser direct writing method cannot quickly prepare storage devices on a large scale. By using ion implantation, the implanted element is implanted into the inorganic wide bandgap material as a luminescent color center, and the implanted element directly replaces the element in the inorganic wide bandgap material, and the element is replaced and retained at the atomic level, which can realize high-density optical information storage at the atomic level. The problem that the organic substance spin-coated on the surface of the device is easily damaged is overcome. The implanted element is injected into the inorganic wide bandgap material to form a luminescent color center, which improves the robustness of the optical information storage device. Based on the semiconductor chip processing technology, the luminescent color center is prepared in the solid system of the inorganic wide bandgap material to realize high-density optical information storage, and the high-density optical information storage technology is combined with the semiconductor chip processing technology to provide a new method for the optical information storage industry. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The above and other objects, features and advantages of the present disclosure will become more apparent through the following description of the embodiments of the present disclosure with reference to the accompanying drawings, in which:

[0018] Figure 1 A flow chart schematically shows a method for preparing an optical information storage device according to an embodiment of the present disclosure;

[0019] Figure 2 A schematic diagram schematically shows a first mask in a method for preparing an optical information storage device according to an embodiment of the present disclosure;

[0020] Figure 3 A diagram schematically shows an information readout result of an optical information storage device according to an embodiment of the present disclosure;

[0021] Figure 4 A flow chart schematically shows a method for preparing an optical information storage device according to another embodiment of the present disclosure; and

[0022] Figure 5 The schematic diagram of the preparation process of the optical information storage device according to the embodiment of the present disclosure is schematically shown. DETAILED DESCRIPTION

[0023] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. However, it should be understood that these descriptions are exemplary only and are not intended to limit the scope of the present disclosure. In the following detailed description, for ease of explanation, many specific details are set forth to provide a comprehensive understanding of the embodiments of the present disclosure. However, it is apparent that one or more embodiments may also be implemented without these specific details. In addition, in the following description, descriptions of known structures and technologies are omitted to avoid unnecessary confusion of the concepts of the present disclosure.

[0024] The terms used herein are only for describing specific embodiments and are not intended to limit the present disclosure. The terms "comprise", "include", etc. used herein indicate the existence of the features, steps, operations and / or components, but do not exclude the existence or addition of one or more other features, steps, operations or components.

[0025] All terms (including technical and scientific terms) used herein have the meanings commonly understood by those skilled in the art unless otherwise defined. It should be noted that the terms used herein should be interpreted as having a meaning consistent with the context of this specification and should not be interpreted in an idealized or overly rigid manner.

[0026] When using expressions such as "at least one of A, B, and C, etc.", they should generally be interpreted according to the meaning of the expression commonly understood by those skilled in the art (for example, "a system having at least one of A, B, and C" should include but is not limited to a system having A alone, B alone, C alone, A and B, A and C, B and C, and / or A, B, C, etc.).

[0027] In the related art, optical information is mostly stored by direct laser writing. The density of information writing is also limited by the optical diffraction limit, which affects the resolution of information writing and is not conducive to large-scale preparation. Currently, the related art includes the following four optical information storage systems.

[0028] 1. Metal nanorod surface plasmon resonance system. Through the surface plasmon resonance characteristics of gold nanorods, an optical information storage technology with five dimensions, including three spatial dimensions, wavelength and polarization, is realized. This type of method writes information by using laser pulse-induced heating, causing the selected nanorods to deform into shorter rods or spherical particles when the melting point is reached, and the information is read out through two-photon luminescence induced by longitudinal surface plasmon resonance. The metal nanorod surface plasmon resonance system is not suitable for storing information that requires long-term storage due to its water solubility, poor thermal stability, and slow single-point writing speed.

[0029] 2. Graphene-graphene oxide system. By controlling the photoreduction intensity of graphene oxide, a refractive index change of the order of 0.1-0.01 can be achieved. Combined with the fluorescence characteristics of graphene oxide polymers, this provides a new idea for using this system to prepare optical information storage devices. This type of method relies on far-field super-resolution writing technology. The energy transfer of rare earth-doped upconversion nanoparticles will trigger the reduction of graphene oxide to graphene, thereby achieving optical information writing with a spatial resolution of 50nm. For the graphene-graphene oxide system, since graphene and graphene oxide themselves are two-dimensional materials, the introduction of external forces and other factors will easily damage the storage medium, resulting in poor robustness of information storage.

[0030] 3. Thermofluorescence system. In the field of optical information storage, the thermofluorescence system uses the thermofluorescence phenomenon of the trap state to store optical information. It is a unique optical information storage method and also has the characteristic of "burn after reading". Since the thermofluorescence readout needs to be read out once by heating, it does not have the high spatial resolution characteristic of confocal readout information, so the storage density is limited.

[0031] 4. The optical information storage method that exceeds the optical diffraction limit mainly uses the information writing method based on inner circle excitation and outer circle suppression, and achieves super-resolution writing by introducing Gauss-Laguerre beam. The writing time of writing a single information voxel by point-by-point focusing is long, requiring 100ms, and the voxel morphology uniformity is poor.

[0032] The current optical information storage methods have the following defects to be solved:

[0033] 1. Weak ability for large-scale preparation. Most optical information storage methods based on laser direct writing for information writing prepare information voxels by focusing the laser beam and generating a multi-photon nonlinear effect at the focus. This single-point writing method takes a long time to prepare and is not conducive to large-scale generation and preparation.

[0034] 2. The information storage density is low. Based on laser direct writing to prepare information voxels, the storage density is limited by the optical diffraction limit, and the storage density is therefore limited.

[0035] 3. Poor uniformity of voxel preparation. When using materials with optical switching properties for information storage and Gaussian-Laguerre light for super-resolution information writing, the uniformity of information voxels is poor, and it is difficult to prepare information voxels with completely consistent fluorescence properties, which is prone to bit errors.

[0036] 4. High energy requirements for information voxel preparation: When using Gaussian-Laguerre light for super-resolution information writing, a higher energy pulsed laser is required for voxel preparation, but the cost of high-power pulsed lasers is high.

[0037] 5. Poor robustness of storage media. Storage solutions such as metal nanorod surface plasmon resonance system and graphene-graphene oxide system, because metal rods are coated on the surface of the substrate or two-dimensional materials are used, this storage system has problems such as poor water solubility and acid and alkali resistance, as well as poor robustness, which can easily cause information loss in harsh environments.

[0038] The present disclosure provides a method for preparing an optical information storage device and a storage device, in order to at least partially solve the above-mentioned defects.

[0039] An embodiment of the present disclosure provides a method for preparing an optical information storage device, comprising: spin-coating photoresist on the surface of an inorganic wide bandgap material to form a first photoresist layer; exposing the first photoresist layer according to a first pattern; wherein first optical information is stored in the first pattern; developing the exposed first photoresist layer to generate a first mask; performing a first ion implantation on the inorganic wide bandgap material with the first mask to implant the implanted element as a luminescent color center into the inorganic wide bandgap material, wherein the implanted element directly replaces the element in the inorganic wide bandgap material to obtain a target device for storing optical information.

[0040] The present disclosure utilizes a mask preparation process to realize large-scale preparation of optical information storage devices. By using ion implantation to store optical information, the information storage density is not limited by the optical diffraction limit, and the storage accuracy can reach the atomic level; by using ion implantation to store optical information, the information voxel has strong stability, good uniformity, and is not prone to bit errors; the energy required to prepare the information voxel is very low; the implanted elements are injected into the inorganic wide bandgap material, so that the optical information storage device has high robustness and ultra-long storage life.

[0041] The present disclosure applies semiconductor device manufacturing technology and micro-nano processing technology to the storage of optical information. Most storage devices prepared by micro-nano processing technology rely on electrical and magnetic technologies for storage, such as USB flash drives, magnetic disks, hard disks and other storage devices, and have not yet been applied to the storage of optical information. In addition, ion implantation in semiconductor manufacturing processes is mostly used to modify the carrier concentration of the substrate material. The implanted elements of the ion implantation disclosed in the present disclosure have fluorescent properties in the substrate material, such as implanting rare earth ions in rare earth doped crystals, and the rare earth ions have fluorescent properties.

[0042] Figure 1 The flowchart of the method for preparing the optical information storage device according to the embodiment of the present disclosure is schematically shown.

[0043] like Figure 1 As shown, the method includes operations S101 to S104.

[0044] In operation S101 , optical resist is spin-coated on a surface of the inorganic wide bandgap material to form a first optical resist layer.

[0045] In operation S102 , the first photoresist layer is exposed according to a first pattern.

[0046] In operation S103, the exposed first photoresist layer is developed to generate a first mask.

[0047] In operation S104, a first ion implantation is performed on the inorganic wide bandgap material with the first mask to obtain a target device for storing optical information.

[0048] According to the embodiments of the present disclosure, inorganic wide bandgap materials are used as information storage media, that is, as substrates, including the following materials: rare earth-doped crystals, such as YAG (yttrium aluminum garnet), YSO (yttrium silicate crystals), YVO4 (yttrium vanadate crystals), sapphire and more than 300 other rare earths; ion-doped bulk materials; wide bandgap semiconductor materials such as diamond and silicon carbide; narrow bandgap semiconductor materials such as silicon; perovskite materials; and Group III-V semiconductor materials such as quantum dots.

[0049] According to an embodiment of the present disclosure, the spin-coated photoresist includes photoresist, electron beam glue, and ultraviolet light glue.

[0050] According to an embodiment of the present disclosure, the first optical information is stored in a first pattern, and the first photoresist layer can be patterned exposed according to the first pattern by an electron beam exposure method.

[0051] According to an embodiment of the present disclosure,

[0052] According to an embodiment of the present disclosure, the exposed first photoresist layer may be placed in a developer for development to generate a first mask.

[0053] According to an embodiment of the present disclosure, the method of generating the first mask by patterned exposure may also include the following methods: two-photon and / or multi-photon laser direct writing based on nonlinear optics; ultraviolet laser direct writing; electron beam exposure; focused ion beam exposure; large-scale ultraviolet light exposure through a mask plate.

[0054] According to an embodiment of the present disclosure, an implanted element is implanted as a luminescent color center in an inorganic wide bandgap material, and the inorganic wide bandgap material is used to prepare a fluorescent luminescent point by first ion implantation to serve as an information storage voxel. The implanted element is implanted as a luminescent color center in an inorganic wide bandgap material, and the implanted element directly replaces the element in the inorganic wide bandgap material to obtain a target device for storing optical information.

[0055] For example, inorganic wide bandgap material diamond is used as a substrate, and nitrogen is injected to produce diamond nitrogen vacancy defect color centers.

[0056] For example, inorganic wide bandgap material silicon is used as the substrate, and carbon elements are injected to produce T color centers.

[0057] For example, the inorganic wide bandgap material YAG (yttrium aluminum garnet) is used as a substrate, rare earth ions are implanted, and the rare earth ions replace the Y in YAG (yttrium aluminum garnet).

[0058] According to the embodiments of the present disclosure, the mask preparation process can be used to realize large-scale preparation of optical information storage devices. When optical information is stored by ion implantation, the information storage density is not limited by the optical diffraction limit, and the storage accuracy can reach the atomic level; when optical information is stored by ion implantation, the information voxel has strong stability, good uniformity, and is not prone to bit errors; the energy required for the preparation of information voxels is very low; the implanted elements are injected into the inorganic wide bandgap material, so that the optical information storage device has high robustness and ultra-long storage life.

[0059] According to an embodiment of the present disclosure, a first ion implantation is performed on an inorganic wide bandgap material with a first mask by using an ion implantation device, and the energy and dosage of the implanted elements need to be strictly controlled during the implantation.

[0060] According to an embodiment of the present disclosure, the portion of the first mask with photoresist will block the injected elements, so that the injected elements with specific energy remain inside the photoresist; the portion of the first mask without photoresist will allow the injected elements to directly enter the interior of the inorganic wide bandgap material and remain on the surface of the inorganic wide bandgap material.

[0061] According to an embodiment of the present disclosure, the first mask uses photoresist. The photoresist with a thickness of 100 nanometers can block the implanted elements with energy below 60keV. The energy range of the implanted elements includes 10-60keV, for example, energy of 10keV, energy of 30keV, and energy of 60keV.

[0062] According to an embodiment of the present disclosure, a metal mask may also be used, and the energy range of the implanted elements may be expanded to include 10-400 keV, for example, energy of 10 keV, energy of 200 keV, and energy of 400 keV.

[0063] According to an embodiment of the present disclosure, the dosage of the implanted element needs to ensure that the fluorescence emitted by the implanted element can be collected, and the dosage range of the implanted element corresponds to the range from a single element to an element cluster.

[0064] According to an embodiment of the present disclosure, the inorganic wide bandgap material includes diamond, the implanted element includes rare earth ions, the energy range of the rare earth ions includes: 10-400 keV; the dose range of the rare earth ions includes: e 12 -e 15 ions / cm 2 .

[0065] For example, the energy of the implanted rare earth ions is 10 keV, the energy is 30 keV, the energy is 60 keV, the energy is 200 keV, and the energy is 400 keV.

[0066] For example, the dose of implanted rare earth ions is e 12 ions / cm2 , the dose is e 13 ions / cm 2 , the dose is e 15 ions / cm 2 .

[0067] According to an embodiment of the present disclosure, the inorganic wide bandgap material includes silicon, the implanted element includes carbon, the energy range of the carbon element includes: 10-400 keV; the dose range of the carbon element includes: e 13 -e 16 ions / cm 2 .

[0068] For example, the energy of the implanted carbon element is 10 keV, the energy is 30 keV, the energy is 60 keV, the energy is 200 keV, and the energy is 400 keV.

[0069] For example, the dose of carbon implanted is e 13 ions / cm 2 , the dose is e 14 ions / cm 2 , the dose is e 16 ions / cm 2 .

[0070] According to the embodiments of the present disclosure, the energy required for preparing information voxels by ion implantation is very small. The implanted elements replace the elements in the inorganic wide bandgap material to complete the preparation of the information voxels of the storage device. The energy range of the implanted elements of the ion implantation includes 10-400 keV. The pulsed laser energy required for information writing using Gauss-Laguerre light includes: 10-1000 GeV.

[0071] According to an embodiment of the present disclosure, the inorganic wide bandgap material after the first ion implantation is subjected to annealing treatment to enhance the fluorescence effect generated by the implanted elements as luminescent color centers in the inorganic wide bandgap material.

[0072] According to the embodiments of the present disclosure, appropriate parameters such as annealing atmosphere, annealing temperature, and annealing time are selected according to the properties of the inorganic wide bandgap material and the injected element, so as to optimize the fluorescence effect of the injected element as a luminescent color center in the inorganic wide bandgap material.

[0073] For example, the inorganic wide bandgap material diamond is used as the substrate, and nitrogen is injected to produce NV color centers. The nitrogen atoms replace the carbon atoms in the inorganic wide bandgap material, and nitrogen vacancy color centers are produced after annealing.

[0074] According to the embodiments of the present disclosure, information is read out of an optical information storage device by a confocal fluorescence microscope imaging method, thereby completing the entire process of writing, storing and reading optical information.

[0075] According to the embodiments of the present disclosure, the information readout method includes the following methods: laser scanning confocal readout; wide-field fluorescence readout; super-resolution readout such as excited state depletion; structured light illumination readout; near-field optical readout; upconversion microscopy readout; and two-photon microscopy readout.

[0076] Figure 2 A schematic diagram of a first mask in a method for preparing an optical information storage device according to an embodiment of the present disclosure is schematically shown.

[0077] Figure 3 The diagram schematically shows the information readout result of the optical information storage device according to the embodiment of the present disclosure.

[0078] According to an embodiment of the present disclosure, an inorganic wide bandgap material YAG (yttrium aluminum garnet) is used as an information storage medium, single-sided fine polishing is performed, and a YAG (yttrium aluminum garnet) block is used as a substrate.

[0079] According to the embodiment of the present disclosure, the mask is prepared by electron beam lithography, and electron beam photoresist is spin-coated on the surface of the substrate with a thickness of 100 nm. Patterned exposure and development are performed according to the first pattern to generate a first mask. The schematic diagram of the first mask is shown in FIG. Figure 2 shown.

[0080] According to an embodiment of the present disclosure, a first ion implantation is performed on a substrate with a first mask, wherein the implanted element is Ce ions, the implantation energy is 30 keV, and the implantation dose is 1.5×10 15 ions / cm 2 .

[0081] According to an embodiment of the present disclosure, the substrate after the first ion implantation is subjected to annealing treatment, the annealing atmosphere is an air atmosphere, the annealing temperature is 1200° C., and the annealing time is 8 hours.

[0082] According to the embodiment of the present disclosure, a confocal fluorescence microscope is used for information readout, the excitation wavelength of the readout platform is selected to be 450nm, and the fluorescence in the 475nm-650nm band is collected for imaging. The information readout result is as follows: Figure 3 shown.

[0083] Figure 4 A flow chart of a method for preparing an optical information storage device according to another embodiment of the present disclosure is schematically shown.

[0084] like Figure 4 As shown, the method includes operations S401 to S410.

[0085] In operation S401 , optical resist is spin-coated on a surface of the inorganic wide bandgap material to form a first optical resist layer.

[0086] In operation S402 , the first photoresist layer is exposed according to a first pattern.

[0087] In operation S403, the exposed first photoresist layer is developed to generate an inorganic wide bandgap material with a first mask.

[0088] In operation S404, a first ion implantation is performed on the inorganic wide bandgap material with the first mask.

[0089] In operation S405 , the inorganic wide bandgap material after the first ion implantation is subjected to a debonding process to obtain a debonded inorganic wide bandgap material.

[0090] In operation S406 , the inorganic wide bandgap material after the resist removal is positioned through an overlay process to obtain a positioned inorganic wide bandgap material.

[0091] In operation S407 , the positioned inorganic wide bandgap material is spin-coated as a photoresist to form a second photoresist layer.

[0092] In operation S408, the second photoresist layer is exposed according to a second pattern; wherein the second optical information is stored in the second pattern.

[0093] In operation S409 , the exposed second photoresist layer is developed to generate a second mask.

[0094] In operation S410, a second ion implantation is performed on the inorganic wide bandgap material with a second mask to obtain a target device.

[0095] According to an embodiment of the present disclosure, the degumming process may be a chemical cleaning method, a specific wet etching method, or a specific dry etching method.

[0096] According to an embodiment of the present disclosure, the second ion implantation and the first ion implantation have different implantation element types and / or different implantation element dosages.

[0097] For example, an inorganic wide bandgap material YAG (yttrium aluminum garnet) is selected as the substrate. After the first mask is generated on the substrate, the first ion implantation is performed. The implanted element is the rare earth ion cerium element. The energy of the implanted element is 60 keV and the implantation dose is 1.5×10 15 ions / cm 2 After debonding and overprinting, a second mask is generated on the substrate after the first ion implantation, and then a second ion implantation is performed. The implanted element is rare earth ion praseodymium, the energy of the implanted element is 60 keV, and the implantation dose is 1.5×10 15 ions / cm 2 ; Get the target device.

[0098] According to an embodiment of the present disclosure, the first mask and the second mask represent different optical information that needs to be written into the inorganic wide bandgap material.

[0099] According to an embodiment of the present disclosure, a laser with a wavelength of 450nm is used to excite the target device, and fluorescence in the 475nm-650nm band is collected, so that the signal of the implanted element cerium of the first ion implantation can be read out, that is, the optical information of the first ion implantation; a laser with a wavelength of 488nm is used to excite the target device, and fluorescence in the 300nm-450nm band is collected, so that the signal of the implanted element praseodymium of the second ion implantation can be read out, that is, the optical information of the second ion implantation.

[0100] According to the embodiments of the present disclosure, in the second ion implantation and the first ion implantation operation, different types of implanted elements and / or different doses are used, and the corresponding fluorescent colors and fluorescent grayscales are different. Through the second ion implantation, when using lasers of different wavelengths to excite the target device, different information can be read out, enriching the fluorescent effect of the luminescent color center; there is a higher storage density in the spatial dimension, expanding the storage density of the optical information storage device.

[0101] According to an embodiment of the present disclosure, the second ion implantation has a different type of implantation element from the first ion implantation to achieve multiplexing of the spectrum of the optical information storage device.

[0102] According to the embodiments of the present disclosure, spectral multiplexing refers to using different laser wavelengths to excite the injected elements in the same spatial region to generate different fluorescence signals. The fluorescence signals come from different types of injected elements, and different types of injected elements produce different fluorescence colors under the excitation of different laser wavelengths.

[0103] For example, on a YAG (yttrium aluminum garnet) substrate, the first ion implantation is performed, the implanted element is praseodymium, the implanted element energy is 30 keV, and the implanted element dose is 1.5×10 15 ions / cm 2 ; The second ion implantation was performed, the implanted element was cerium, the implanted element energy was 30 keV, and the implanted element dose was 1.5×10 15 ions / cm 2 In multiplexing, the laser wavelength used to excite praseodymium is 488 nm, and the laser wavelength used to excite cerium is 450 nm.

[0104] According to an embodiment of the present disclosure, the second ion implantation has a different dose of implanted elements from the first ion implantation to achieve multiplexing of fluorescent grayscales of the optical information storage device.

[0105] According to the embodiments of the present disclosure, the multiplexing of fluorescence grayscale refers to using the same laser wavelength to excite the injected elements in the same spatial region to generate different fluorescence signals. The same injected elements but different injected doses generate different fluorescence grayscales.

[0106] According to an embodiment of the present disclosure, different doses of rare earth ions are implanted successively on a YAG (yttrium aluminum garnet) substrate. When four grayscales are used, four implantations are required, using different masks, and the masks need to be designed according to the four grayscales.

[0107] For example, on a YAG (yttrium aluminum garnet) substrate, four ion implantations are performed, the implanted element is cerium, the implanted element energy is 60 keV, and the dose of the implanted element in the first ion implantation is 3×10 14 ions / cm 2 The dose of the implanted element in the second ion implantation is 6×10 14 ions / cm 2 The dose of the implanted element in the third ion implantation is 9×10 14 ions / cm 2 The dose of the implanted element in the fourth ion implantation is 1.2×10 15 ions / cm 2 . A laser with a wavelength of 450nm was used to excite the target device and collect fluorescence in the 475nm-650nm band.

[0108] According to the embodiments of the present disclosure, the fluorescence intensity has a proportional relationship of 1-4 times. When using a confocal fluorescence microscope to read out information, different doses of the injected element correspond to different fluorescence counts at the injection site, and the original information can be inverted to further expand the storage density of the optical information storage device.

[0109] According to the embodiments of the present disclosure, the methods for improving information storage density also include the following:

[0110] 1. Use the polarization characteristics of light to achieve polarization scale multiplexing;

[0111] 2. Utilize the lifetime characteristics of different ion excited states to achieve time scale multiplexing;

[0112] 3. Using different concentrations of injected ions or different hole sizes in the mask, different numbers of ions are excited under the optical diffraction limit, so that the fluorescence brightness generated at each point is different. The fluorescence brightness is converted into grayscale to achieve multiplexing of fluorescence grayscale scale;

[0113] 4. Use exposure masks to make circular, triangular, square and other patterns to achieve pattern multiplexing.

[0114] According to an embodiment of the present disclosure, the inorganic wide bandgap material after annealing is peeled off to generate an inorganic thin film; the inorganic thin film is stacked in layers to obtain a target device; wherein the inorganic thin film is used as an information storage substrate.

[0115] According to the embodiments of the present disclosure, the injected elements only produce the luminescent color center effect in the surface layer of the inorganic wide bandgap material, and the surface layer refers to the surface layer depth of the inorganic wide bandgap material in the micrometer scale, for example, 10 μm. Therefore, the surface layer of the inorganic wide bandgap material after annealing can be peeled off to generate an inorganic thin film.

[0116] According to an embodiment of the present disclosure, after a first ion implantation and annealing, or after a second ion implantation and annealing, or after multiple ion implantations and annealing, an inorganic thin film is prepared and used as an information storage substrate for interlayer stacking.

[0117] According to the embodiments of the present disclosure, the interlayer stacking methods include the following: Smart Cut technology; wet transfer of thin films and two-dimensional materials; mechanical peeling and transfer of thin films and two-dimensional materials; thin film material bonding; substrate CVD, ALD, evaporation, magnetic co-sputtering and other regrowth methods.

[0118] Figure 5 The schematic diagram of the preparation process of the optical information storage device according to the embodiment of the present disclosure is schematically shown.

[0119] like Figure 5 As shown, the first step is to prepare a mask by patterned exposure; the second step is to store optical information in the inorganic wide bandgap material by ion implantation into the inorganic wide bandgap material substrate with the mask; the third step is to remove the glue and anneal; the fourth step is to overlay the inorganic wide bandgap erased substrate, change the type and dosage of implanted ions, and then perform ion implantation; the fifth step is to complete the interlayer stacking using Smart Cut technology.

[0120] like Figure 5 As shown, the Smart Cut technology is used to peel off the inorganic thin film from the inorganic wide bandgap material substrate and stack the inorganic thin films. Each layer of the inorganic thin film stores different optical information, and each layer of the inorganic thin film produces a different fluorescence effect.

[0121] According to the embodiments of the present disclosure, the optical information storage device obtained by interlayer stacking expands the storage space dimension from two dimensions to three dimensions, so that the pattern information read out is richer, and the storage density of the optical information storage device is further improved.

[0122] According to the embodiments of the present disclosure, optical information storage units can be prepared quickly and on a large scale through semiconductor chip preparation processes such as mask preparation, ion implantation, annealing and etching, as well as key and mature processes of micro-nano processing. Through semiconductor chips and micro-nano processing technology, the size of storage voxels can be increased from the optical diffraction limit to the nanometer scale, and the storage voxels have better uniformity, which can reduce the bit error rate, thereby realizing high-density, large-capacity optical information storage. At the same time, the ion implantation method improves the robustness of information storage and has an ultra-long storage life. Therefore, the present disclosure provides a new method for large-scale and rapid preparation of highly stable, long-life, and large-capacity optical information storage devices.

[0123] The embodiments of the present disclosure are described above. However, these embodiments are only for illustrative purposes and are not intended to limit the scope of the present disclosure. Although the embodiments are described above, this does not mean that the measures in the various embodiments cannot be used in combination to advantage. Without departing from the scope of the present disclosure, those skilled in the art may make a variety of substitutions and modifications, which should all fall within the scope of the present disclosure.

Claims

1. A method for preparing an optical information storage device, characterized in that: include: Spin coating optical glue on the surface of the inorganic wide bandgap material to form a first optical glue layer; Exposing the first photoresist layer according to a first pattern; wherein first optical information is stored in the first pattern; Developing the exposed first photoresist layer to generate a first mask; The inorganic wide bandgap material with the first mask is subjected to a first ion implantation to implant an implanted element as a luminescent color center into the inorganic wide bandgap material. The implanted element directly replaces the element in the inorganic wide bandgap material to obtain a target device for storing optical information.

2. The method for preparing an optical information storage device according to claim 1, characterized in that: The inorganic wide bandgap material includes diamond, the implanted element includes rare earth ions, the energy range of the rare earth ions includes: 10-400keV; the dosage range of the rare earth ions includes: e 12 -e 15 ions / cm 2 .

3. The method for preparing an optical information storage device according to claim 1, characterized in that: The inorganic wide bandgap material includes silicon, the implanted element includes carbon, the energy range of the carbon element includes: 10-400 keV; the dose range of the carbon element includes: e 13 -e 16 ions / cm 2 .

4. The method for preparing an optical information storage device according to claim 1, characterized in that: Also includes: The inorganic wide bandgap material after the first ion implantation is subjected to a debonding treatment to obtain a debonded inorganic wide bandgap material; Positioning the inorganic wide bandgap material after the debonding through an overlay process to obtain a positioned inorganic wide bandgap material; Spin-coating the positioned inorganic wide bandgap material with optical resin to form a second optical resin layer; Exposing the second photoresist layer according to a second pattern; wherein the second optical information is stored in the second pattern; Developing the exposed second photoresist layer to generate a second mask; A second ion implantation is performed on the inorganic wide bandgap material with a second mask to obtain the target device; wherein the second ion implantation is different from the first ion implantation in terms of the type of implanted element and / or the dose of the implanted element.

5. The method for preparing an optical information storage device according to claim 4, characterized in that: The second ion implantation has an implantation element of a different type from that of the first ion implantation, so as to achieve spectrum multiplexing of the optical information storage device.

6. The method for preparing an optical information storage device according to claim 4, characterized in that: The second ion implantation has a different dose of implanted elements from that of the first ion implantation to achieve multiplexing of fluorescent grayscales of the optical information storage device.

7. The method for preparing an optical information storage device according to claim 1, characterized in that: Also includes: The inorganic wide bandgap material after the first ion implantation is subjected to annealing treatment to enhance the fluorescence effect generated by the implanted element as a luminescent color center in the inorganic wide bandgap material.

8. The method for preparing an optical information storage device according to claim 7, characterized in that: Also includes: Stripping the inorganic wide bandgap material after annealing to generate an inorganic thin film; The inorganic thin films are stacked in layers to obtain the target device; wherein the inorganic thin films are used as information storage substrates.

9. The method for preparing an optical information storage device according to claims 1 to 8, characterized in that: The information of the optical information storage device is read out by confocal fluorescence microscopy imaging.

10. An optical information storage device prepared by the method according to claims 1-8.

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