Systems and methods for characterizing quantum light emitter dipole structures and orientations

By measuring the fluorescence lifetime changes of quantum light emitters using a scanning near-field optical probe assembly and combining this with data processing simulation, the problem of accurately characterizing the three-dimensional dipole structure and orientation of quantum light emitters was solved, and high-resolution three-dimensional dipole model fitting was achieved.

CN119394979BActive Publication Date: 2025-11-11HUAZHONG UNIV OF SCI & TECH
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Patent Information

Application Number
CN202411317747.X
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2024-09-20
Publication Date
2025-11-11
Estimated Expiration
2044-09-20

AI Technical Summary

Technical Problem

Existing technologies are insufficient to accurately characterize the three-dimensional dipole structure and orientation of quantum light emitters. Far-field radiation information is easily affected by the environment and experimental equipment, leading to model simplification and inaccurate descriptions.

Method used

A scanning near-field optical probe assembly was used to measure fluorescence lifetime changes through the Purcell effect. Combined with a data processing module, numerical simulation fitting was performed to determine the three-dimensional dipole structure and orientation of the quantum light emitter.

Benefits of technology

It achieves accurate characterization of the three-dimensional dipole structure and orientation of quantum light emitters, avoids distortion of far-field information, is applicable to various dipole structures, has higher resolution, and strong robustness.

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Abstract

The application relates to the technical field of quantum light emitter characterization, and discloses a quantum light emitter dipole structure and orientation characterization system and method.The characterization system comprises a quantum light emitter sample fixing assembly, a fluorescence excitation, fluorescence detection and fluorescence lifetime measurement assembly, a scanning near-field optical probe assembly, a scanning near-field optical probe control assembly and a data processing module.The scanning near-field optical probe assembly performs three-dimensional space scanning around a quantum light emitter to be measured, obtains a Purcell factor distribution, and compares the Purcell factor distribution with a Purcell factor distribution obtained by numerical simulation under any dipole structure and orientation parameter, so as to fit the three-dimensional dipole structure and orientation parameter of the quantum light emitter to be measured.The characterization scheme provided by the application is a near-field characterization scheme based on fluorescence lifetime information, has better robustness and higher resolution compared with a traditional far-field characterization scheme based on fluorescence intensity information, and can more accurately characterize the three-dimensional dipole parameter of the quantum light emitter.
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