Cascade gain enhanced photo-generated millimeter wave terahertz wave wireless signal transceiver

Abstract

The invention provides a cascade gain enhanced photo-generated millimeter wave terahertz wave wireless signal transceiver which comprises a metal shell, a PCB circuit board fixed in the metal shell, an optical fiber module located on the PCB circuit board, a PIN-PD integrated antenna chip and a wireless signal cascade gain enhancement module connected with the metal shell, the wireless signal cascade gain enhancement module comprises a silicon lens and a horn antenna which are connected with the metal shell; the PIN-PD integrated antenna chip is mounted at a preset position of the silicon lens; the PIN-PD integrated antenna chip comprises a planar antenna and a PIN-PD, wherein the planar antenna and the PIN-PD are integrated together. The PIN-PD is located in a preset range of the center of the planar antenna; the planar antenna is formed by connecting two fan-shaped antenna groups; and each fan-shaped antenna group is formed by combining a first fan-shaped antenna and a second fan-shaped antenna. According to the scheme, the gain of the antenna can be improved, the power of a photo-generated millimeter wave / terahertz wave wireless transmitting signal can be enhanced, and the sensitivity of a wireless detection device can be improved.

Description

Technical Field

[0001] The present invention relates to the technical field of photon wireless communication, and in particular to a gain-enhanced optically generated millimeter-wave terahertz wave wireless signal transceiver. Background Art

[0002] With the emergence of various emerging communication services, the bandwidth requirements of end users continue to increase, and people's demand for network system bandwidth continues to increase. As the bandwidth of wireless communication continues to increase, traditional electronic technology can no longer meet the demand for increased transmission rates. The generation of millimeter wave / terahertz wave signals through photonic technology can be unaffected by the processing speed bottleneck of electronic technology. At the same time, combined with the low loss and high transmission bandwidth characteristics of optoelectronic communication itself, the transmission distance of the signal can be increased, thereby overcoming the shortcomings of the short transmission distance of wireless signals themselves. The optical heterodyne method generates millimeter waves / terahertz waves by using two light wave signals with similar frequencies to beat at the photodetector to generate the required millimeter wave / terahertz wave signal. The frequency of the generated signal is determined by the frequency difference of the two light waves, and the amplitude is determined by the inner product of the two light wave vector fields.

[0003] like Figure 1 The figure shows the principle diagram of generating millimeter wave / terahertz wave by optical heterodyne method. The frequencies of the two lasers are f1 and f2 (f1>f2), respectively. The data to be transmitted is loaded onto the light wave of laser 1 through the modulator. The two light wave signals are combined into one optical path through the coupler, and then amplified by the light signal. The photodetector converts the amplified light signal into an electrical signal, and then converts the electrical signal into a radio electromagnetic wave signal through the antenna interconnected with the photodetector and radiates it out.

[0004] Assume that the electric field distributions of the two light wave signals are:

[0005]

[0006] E1 and E2 are the amplitudes of the two light wave signals, f1 and f2 are the frequencies of the two light wave signals, are the initial phases of the two light wave signals respectively. Then the photocurrent of the photoelectric detection is:

[0007]

[0008] Then, the corresponding voltage signal output by the photodetector is:

[0009]

[0010] In the formula, is the current response rate of the photodetector.

[0011] From the above formula, we can see that the frequency of the electromagnetic wave wireless signal is the frequency difference between the two light wave signals. The frequency is limited only by the bandwidth of the photodiode. By adjusting the laser frequency, the wireless signal frequency can be continuously adjusted, which has a larger adjustment range than electronic devices. Figure 1 From formula (4), it can be seen that the size of the electromagnetic wave wireless signal is not only related to the response rate and saturated optical power of the photodetector, but also to the gain of the antenna. Therefore, the size of the optical difference frequency wireless signal can be improved from both the photodetector and the antenna.

[0012] At present, the response rate and saturated optical power of large-bandwidth photodetectors are generally low, and it is difficult to increase the transmission power of wireless signals from the perspective of photodetectors. Therefore, the development of efficient, high-power, frequency-tunable photogenerated millimeter-wave / terahertz wave signal sources requires the use of high-power RF amplifiers to make up for the lack of transmission signal power. However, with the increasing degree of integration of communication systems, the integration of antennas and transceiver front ends is an inevitable trend. Since planar antenna structures can be prepared using photolithography technology and are easy to integrate with active and passive devices, the design of millimeter-wave / terahertz wave planar antenna structures integrated with devices is of great significance. However, due to the presence of the planar antenna substrate medium, the surface wave effect of the medium will occur, so that most of the energy radiated by the antenna is confined and cannot be radiated out. Summary of the invention

[0013] The embodiment of the present invention provides a cascade gain-enhanced photogenerated millimeter-wave terahertz wave wireless signal transceiver, which solves the technical defect that in the process of developing an efficient, high-power, frequency-tunable millimeter-wave / terahertz wave signal source in the prior art solution, a high-power RF amplifier is needed to make up for the insufficient transmission power. At the same time, the antenna in the cascade gain-enhanced photogenerated millimeter-wave terahertz wave wireless signal transceiver provided by the solution can effectively overcome the surface wave effect of the medium and improve the gain of the antenna, so that the wireless signal has a longer transmission distance.

[0014] In a first aspect, according to an embodiment of the present invention, a cascade gain-enhanced optically generated millimeter-wave terahertz wave wireless signal transceiver is provided, comprising: a metal housing, a PCB circuit board fixed in the metal housing, an optical fiber module located on the PCB circuit board, a PIN-PD integrated antenna chip, and a wireless signal cascade gain enhancement module connected to the metal housing, wherein:

[0015] A wireless signal cascade gain enhancement module, comprising a silicon lens and a horn antenna both connected to the metal housing;

[0016] The PIN-PD integrated antenna chip is mounted on a preset position of the silicon lens;

[0017] The PIN-PD integrated antenna chip includes a planar antenna and a PIN-PD integrated together;

[0018] The PIN-PD is located within a preset range of the center of the planar antenna;

[0019] The planar antenna is formed by connecting two sector antenna groups, and the size of the planar antenna is 5mm×5mm; each sector antenna group is composed of a first sector antenna and a second sector antenna.

[0020] Preferably, in the cascade gain-enhanced optically generated millimeter-wave terahertz wave wireless signal transceiver, the planar antenna comprises two sector antenna groups;

[0021] Preferably, in the cascade gain-enhanced optically generated millimeter-wave terahertz wave wireless signal transceiver, each planar antenna group includes a first sector antenna and a second sector antenna;

[0022] The radius of the first sector antenna is R1=1 mm, the center angle of the first sector antenna is θ=60°, the radius of the second sector antenna is R2=R1 / 1.5, and the center angle of the second sector antenna is d=0.17mm.

[0023] Preferably, in the cascade gain-enhanced optically generated millimeter-wave and terahertz-wave wireless signal transceiver, the length L of the horn antenna is 75 mm; and the expansion angle α of the horn antenna is 25°.

[0024] Preferably, in the cascade gain-enhanced optically generated millimeter-wave terahertz wave wireless signal transceiver, the silicon lens comprises a hemispherical portion and an extended portion, and the extended portion is cylindrical in shape;

[0025] The radius of the circular cross section of the extended portion is the same as the radius of the hemispherical portion; the circular cross section of the extended portion is connected to the tangent plane of the hemispherical portion;

[0026] The PIN-PD integrated antenna chip is mounted on the circular cross section of the extended portion that is away from the hemispherical portion.

[0027] Preferably, in the cascade gain-enhanced optically generated millimeter-wave and terahertz-wave wireless signal transceiver, the thickness of the extended portion in the silicon lens is 3.75 mm, and the radius of the hemispherical portion in the silicon lens is 15 mm.

[0028] Preferably, in the cascade gain-enhanced optically generated millimeter-wave and terahertz-wave wireless signal transceiver, the height H of the metal shell is 22 mm.

[0029] Preferably, in the cascade gain-enhanced optically generated millimeter-wave terahertz wave wireless signal transceiver, the optical fiber module comprises:

[0030] A lower cover plate, located on the PCB circuit board, to support the optical fiber array FA;

[0031] The optical fiber array FA is coupled and connected with the PIN-PD to transmit the photon wireless signal to the PIN-PD;

[0032] The optical fiber pigtail is connected to both the optical fiber array FA and the external photon signal generating device to transmit the optical signal generated by the external photon signal generating device to the optical fiber array FA.

[0033] Preferably, in the cascade gain-enhanced optically generated millimeter-wave terahertz wave wireless signal transceiver, the PIN-PD integrated antenna chip further includes:

[0034] The substrate layer is made of group III-V material, and the thickness of the substrate layer is 0.15 mm.

[0035] Preferably, in the cascade gain-enhanced optically generated millimeter-wave and terahertz-wave wireless signal transceiver, the silicon lens is made of high-resistance silicon material.

[0036] The cascade gain-enhanced photogenerated millimeter-wave terahertz wave wireless signal transceiver improved in the embodiment of the present invention adopts a wireless signal cascade gain enhancement module including a silicon lens and a horn antenna and is integrated with a planar antenna combination, effectively overcoming the technical defect that a high-power RF amplifier must be used to make up for the insufficient transmission power in the traditional solution. At the same time, the antenna in the cascade gain-enhanced photogenerated millimeter-wave terahertz wave wireless signal transceiver provided by the solution can effectively overcome the surface wave effect of the medium and improve the gain of the antenna, thereby enabling the wireless signal to have a longer transmission distance.

[0037] The cascaded gain-enhanced photogenerated millimeter-wave terahertz wave wireless signal transceiver provided in the embodiment of the present invention has a simple structural design, is easy to process and realize, is convenient to disassemble and assemble, and has flexible usage scenarios. The designed planar antenna structure has higher directivity, narrower beam, and higher gain; the silicon lens cascaded horn antenna is used as a wireless signal cascade gain enhancement module in the embodiment of the present invention, which can be used as a wireless photon signal transmitter and a wireless photon signal receiver at the same time, which can not only enhance the power of the photogenerated millimeter-wave / terahertz wave wireless transmission signal but also improve the sensitivity of the wireless detection device; the cascaded gain-enhanced photogenerated millimeter-wave terahertz wave wireless signal transceiver provided in this scheme, when used as a transmitter, because the external light source is generated based on the frequency difference of the two light wave signals, therefore, when used as a transmitting device, the wireless signal frequency can be continuously tuned. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] Figure 1 This is a schematic diagram of the principle of generating millimeter waves / terahertz waves using the optical heterodyne method in the prior art.

[0039] Figure 2 A schematic diagram of the structure of a cascade gain-enhanced optically generated millimeter-wave and terahertz-wave wireless signal transceiver provided in an embodiment of the present invention.

[0040] Figure 3 A schematic diagram of the optical coupling structure of a PIN-PD integrated antenna chip and an optical fiber module in a cascade gain-enhanced optically generated millimeter-wave terahertz wave wireless signal transceiver provided in an embodiment of the present invention.

[0041] Figure 4 Schematic diagram of the structure of the planar sector antenna used in the embodiment of the present invention.

[0042] Figure 5 A schematic diagram of the structure of an extended silicon lens used in a cascade gain-enhanced optically generated millimeter-wave and terahertz-wave wireless signal transceiver provided in an embodiment of the present invention.

[0043] Figure 6 This is a radiation gain pattern corresponding to a planar antenna structure only in a specific embodiment of the present invention.

[0044] Figure 7 This is an antenna radiation gain pattern corresponding to a wireless signal amplifying device using a silicon lens in a specific embodiment of the present invention.

[0045] Figure 8 This is an antenna radiation gain pattern corresponding to a wireless signal amplifying device using a silicon lens and a horn antenna in a specific embodiment of the present invention.

[0046] Fig. 9 This is a corresponding antenna gain spectrum when a planar sector antenna, a silicon lens and a horn antenna are cascaded respectively in a specific embodiment of the present invention.

[0047] Fig.10 This is a graph of antenna gain corresponding to a logarithmic periodic spiral antenna, a silicon lens, and a horn antenna that are cascaded in a specific embodiment of the present invention. DETAILED DESCRIPTION

[0048] The present invention will be further described below in conjunction with specific drawings and embodiments.

[0049] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Generally, the components of the embodiments of the present invention described and shown in the drawings here can be arranged and designed in various different configurations.

[0050] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the invention claimed for protection, but merely represents selected embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0051] It should be noted that similar reference numerals and letters represent similar items in the following drawings, so once an item is defined in one drawing, it does not need to be further defined and explained in subsequent drawings. It should be noted that the terms "first", "second", "third", "fourth" and other serial numbers used in the following description are for the convenience of description, and are not specific limitations on whether the devices must be the same or different. The terms "bottom surface" and "top surface", "inside" and "outside" refer to the direction toward or away from the geometric center of a specific component, respectively.

[0052] The technical problems solved by the present invention are: on the one hand, how to overcome the dielectric surface wave effect caused by the substrate dielectric of the planar antenna so that most of the energy radiated by the antenna can be radiated out; on the other hand, how to make the transceiver structure have a higher gain while being easy to disassemble and assemble, and at the same time realize the sharing of a high-gain signal processing module for transmission and reception.

[0053] See also Figure 2 and Figure 3 As shown, an embodiment of the present invention provides a cascade gain-enhanced optically generated millimeter-wave terahertz wave wireless signal transceiver, comprising a metal shell 11, a PCB circuit board 12 fixed in the metal shell 11, an optical fiber module 13 located on the PCB circuit board 12, a PIN-PD integrated antenna chip 14 and a wireless signal cascade gain enhancement module 15 connected to the metal shell 11. Specifically, in the embodiment of the present invention:

[0054] The wireless signal cascade gain enhancement module 15 includes a silicon lens 151 and a horn antenna 152. In the embodiment of the present invention, a cascade gain enhanced photogenerated millimeter wave terahertz wave wireless signal transceiver is provided. The silicon lens 151 and the horn antenna 152 are both connected to the metal shell 11, and the horn antenna cover is arranged on the side of the silicon lens 151 close to the hemisphere; as an optional implementation, the silicon lens is connected to the inner cavity of the metal shell, and the horn antenna is connected to the edge of the metal shell with an opening through a connecting device such as screws.

[0055] The PIN-PD integrated antenna chip 14 is mounted at a preset position of the silicon lens 151; specifically, in one embodiment of the present invention, the PIN-PD integrated antenna chip 14 is mounted at the central area of ​​a cross section of the silicon lens 151, for example, it can be mounted at the central area of ​​the side of the epitaxial growth portion away from the hemisphere;

[0056] The PIN-PD integrated antenna chip 14 includes a planar antenna 141 and a PIN-PD 142 integrated together; wherein the planar antenna 141 and the PIN-PD 142 are an integrated chip, and specifically, the PIN-PD 142 is located in the central area of ​​the upper surface of the planar antenna 141, wherein the upper surface is the surface of the substrate facing away from the PIN-PD integrated antenna chip 14.

[0057] The planar antenna 141 may be formed by connecting two sector antenna groups; of course, it may also be various planar structures such as logarithmic periodic spiral antenna, logarithmic antenna, sector antenna, butterfly antenna and dipole antenna.

[0058] When the planar antenna is composed of two sector antenna groups, each sector antenna group is composed of a first sector antenna and a second sector antenna.

[0059] In the embodiments of the present invention, see Figure 4 As shown, the planar antenna 141 is formed by connecting two sector antenna groups. As shown in the figure, the planar antenna includes a first sector antenna group 1411 and a second sector antenna group 1412, and each sector antenna group includes a first sector antenna 1401 and a second sector antenna 1402.

[0060] In the embodiment of the present invention, the size of the planar antenna is 5 mm×5 mm, that is, the size of a chip formed by combining the first sector antenna group 1411 and the second sector antenna group 1412 is 5 mm×5 mm.

[0061] In the embodiment of the present invention, the radius R1 of the first sector antenna is 1 mm, the center angle θ of the first sector antenna is 60°, the radius R2 of the second sector antenna is R1 / 1.5, and the center angle θ of the second sector antenna is d=0.17mm.

[0062] In the embodiment of the present invention, the wireless signal cascade gain enhancement module 15 includes a silicon lens 151 and a horn antenna 152. As a preferred embodiment, the length L of the horn antenna is 75 mm; the expansion angle α of the horn antenna is 25°.

[0063] In the embodiments of the present invention, see Figure 5 As shown, the silicon lens 151 includes a hemispherical part 1511 and an extension part 1512, the extension part 1512 is cylindrical in shape; the radius of the circular cross-section of the extension part 1512 is the same as the radius of the hemispherical part; the circular cross-section of the extension part 1512 is connected to the section of the hemispherical part 1511; the PIN-PD integrated antenna chip is mounted on the circular cross-section of the extension part away from the hemispherical part.

[0064] Furthermore, the thickness H2 of the extended portion in the silicon lens is 3.75 mm, and the radius R of the hemispherical portion in the silicon lens is 15 mm.

[0065] In an embodiment of the present invention, the cascade gain-enhanced optically generated millimeter-wave terahertz wave wireless signal transceiver also includes a cover plate for encapsulating the PCB circuit board and the PIN-PD integrated antenna chip and optical fiber module connected to the PCB circuit board in a metal shell.

[0066] In the embodiments of the present invention, see Figure 3 As shown, the optical fiber module 13 includes:

[0067] A lower cover plate 132 is located on the PCB circuit board to support the optical fiber array FA;

[0068] The optical fiber array FA 133 is coupled to the PIN-PD 142 to transmit the photon wireless signal to the PIN-PD;

[0069] The optical fiber pigtail 131 is connected to both the optical fiber array FA and the external photon signal generating device to transmit the optical signal generated by the external photon signal generating device to the optical fiber array FA.

[0070] In one embodiment of the present invention, the PIN-PD integrated antenna chip further includes:

[0071] The substrate layer 143 of group III-V material has a thickness of 0.15 mm.

[0072] Optionally, in an embodiment of the present invention, the substrate layer of the PIN-PD integrated antenna chip is made of InP material, whose dielectric constant is 12.8.

[0073] In the embodiment of the present invention, the material of the silicon lens is high-resistance silicon material. As described above, the silicon lens includes a hemispherical portion and an extended portion. Therefore, the materials of the hemispherical portion and the extended portion are both high-resistance silicon material.

[0074] Since the material of the substrate layer of the PIN-PD integrated antenna chip is InP material, in order to ensure the continuity of the dielectric constant between the silicon lens medium and the substrate layer of the PIN-PD integrated antenna chip (similar dielectric constants), the material of the silicon lens is selected from high-resistance silicon material. The dielectric constant of the high-resistance silicon material selected in the embodiment of the present invention is 11.9.

[0075] The cascaded gain-enhanced photogenerated millimeter-wave terahertz wave wireless signal transceiver provided in the embodiment of the present invention has a simple structural design, is easy to process and realize, is convenient to disassemble and assemble, and has flexible usage scenarios. The designed planar antenna structure has higher directivity, narrower beam, and higher gain; the silicon lens cascaded horn antenna is used as a wireless signal cascade gain enhancement module in the embodiment of the present invention, which can be used as a wireless photon signal transmitter and a wireless photon signal receiver at the same time, which can not only enhance the power of the photogenerated millimeter-wave / terahertz wave wireless transmission signal but also improve the sensitivity of the wireless detection device; the cascaded gain-enhanced photogenerated millimeter-wave terahertz wave wireless signal transceiver provided in this scheme, when used as a transmitter, because the external light source is generated based on the frequency difference of the two light wave signals, therefore, when used as a transmitting device, the wireless signal frequency can be continuously tuned.

[0076] In the embodiment of the present invention, the wireless signal cascade gain enhancement module uses a silicon lens cascaded horn antenna, so that the gain of the antenna is higher. As follows, a complete verification process is provided. The specific verification process includes the case where the wireless signal cascade gain enhancement module only uses a silicon lens and the case where the wireless signal cascade gain enhancement module is not set. At the same time, in order to further verify the technical effect that the silicon lens cascaded horn antenna can make the antenna gain higher, various types of planar antennas are also verified. The specific process is as follows:

[0077] First, verify the case where the planar antenna is a planar sector antenna made of metal film:

[0078] In order to convert photocurrent into electromagnetic wave wireless signal and radiate it into free space, a planar sector antenna made of metal film is used to complete the conversion of current into electromagnetic wave. Antennas that can realize the conversion of current into electromagnetic wave signal include but are not limited to logarithmic periodic spiral antenna, logarithmic antenna, sector antenna, butterfly antenna and dipole antenna and other planar structures. The optical difference frequency signal frequency is 30GHz for testing. First, only a planar antenna is used without any wireless signal cascade gain enhancement module. See Figure 6 The radiation gain pattern corresponding to the antenna structure at 30 GHz is shown. The planar antenna on the substrate layer radiates mainly along the up and down directions of the substrate. The gain at 30 GHz is 1.94 dBi and the 3dB beam width is 84.5°. This shows that the radiation direction of the dielectric planar antenna is relatively divergent, which leads to its low radiation gain.

[0079] Continuing, the wireless signal cascade gain enhancement module only uses a silicon lens, the extended height H2 of the silicon lens is 3.75 mm, and the radius of the hemispherical part of the silicon lens is 15 mm. Through simulation, see Figure 7As shown, the extended height H2 of the silicon lens is 3.75mm, and the radius of the hemispherical part of the silicon lens is 15mm. The corresponding gain of the 30GHz silicon lens antenna is 16.8dBi, the 3dB beam width is 19.7 degrees, and the side lobe is -12.6dB, but there are still back lobes and side lobes, and the back lobes are relatively obvious. From the radiation pattern, it can be seen that compared with the substrate planar antenna, the silicon lens antenna can significantly enhance the gain of the antenna, making the antenna's radiation directivity better, the beam width narrower, the gain greater, and the transmission distance longer.

[0080] Furthermore, the wireless signal cascade gain enhancement module uses a silicon lens cascaded horn antenna, so that the silicon lens collects more wireless signal information, and the wireless signal is reflected by the side wall of the horn antenna and focused on the surface of the silicon lens. After simulation design, the height H of the metal box 4 is 22mm, the radius R of the silicon lens 2 is 15mm, the length L of the horn antenna 3 is 75mm, and the expansion angle α of the horn antenna 3 is 25°. Figure 8 The radiation gain pattern of the simulated silicon lens cascade horn antenna at 30GHz is 18.2dBi, the 3dB beam width is 14.4°, and the side lobe is -32.2dB. The silicon lens cascade horn antenna structure has a greater gain, a narrower 3dB beam width, and smaller side lobes and back lobes. Compared with the silicon lens antenna, the gain of the silicon lens cascade horn structure antenna is increased by 1.5dB, the 3dB beam width is compressed by 5.3°, and the side lobe is reduced by 19.6dB, which makes more energy concentrated on the main lobe. This is mainly attributed to the reflection enhancement effect of the side walls around the horn antenna, which makes the gain of the silicon lens cascade horn antenna structure greater.

[0081] This scheme further verifies the gain variation curves of the three structure simulations of planar antenna, silicon lens antenna and silicon lens cascade horn antenna with frequency and the corresponding structural schematic diagrams, such as Fig. 9 As shown, Fig. 9 In the figure, (a) represents the shape of the planar antenna, (b) represents the planar antenna cascaded with a silicon lens, and (c) represents the antenna, silicon lens and cascaded horn antenna. Fig. 9 It can be seen that after the planar antenna is cascaded with the silicon lens, the gain of the silicon lens antenna is increased by 10-16dB, and then after the first-level horn antenna structure is cascaded, the gain of the second-level cascade structure antenna is further increased by 1-3dB. At 30GHz, the gain of the antenna with the silicon lens cascade horn structure is increased from 2.5dBi of the planar antenna to 18.2dBi, and the gain is increased by 15.7dB.

[0082] In addition, the case where the planar antenna is a logarithmic periodic spiral antenna structure is verified. When the planar antenna is a logarithmic periodic spiral antenna structure, the same silicon lens first-stage cascade and silicon lens cascade horn antenna structure second-stage cascade are used. The gain changes of the three structural antennas are as follows: Fig.10 As shown. Among them, Fig.10 In the figure, (a) represents the shape of the planar antenna, (b) represents the planar antenna cascaded with a silicon lens, and (c) represents the antenna and silicon lens cascaded with a horn antenna. The gain of the silicon lens antenna is 10-14dB higher than that of the planar antenna, and the gain of the silicon lens cascaded horn antenna is 2-5dB higher than that of the silicon lens antenna. At 30GHz, the antenna gain of the silicon lens cascaded horn structure is increased from 2.2dBi of the planar antenna to 18dBi, an increase of 15.8dB. This also shows that no matter what structural form the planar antenna adopts, as long as the silicon lens and silicon lens cascaded horn antenna structure are used, the gain of the antenna structure at each level of the cascade can be made greater.

[0083] The verification process provided by the embodiment of the present invention, first, in order to convert the photocurrent into an electromagnetic wave wireless signal and radiate it into free space, a planar fan antenna made of a metal film is used to complete the conversion of current into electromagnetic waves. The antenna that can realize the conversion of current into electromagnetic wave signals includes but is not limited to various structures in planar form such as logarithmic periodic spiral antenna, logarithmic antenna, fan antenna, butterfly antenna and dipole antenna. In order to avoid the generation of surface waves of the substrate medium, the planar antenna is attached to the back of the dielectric lens. When the dielectric constant of the dielectric lens is the same or close to that of the substrate substrate, the optical properties of the dielectric substrate and the lens become continuous, thereby eliminating the surface wave effect, and it can ensure that most of the electromagnetic wave energy is propagated in the half space of the dielectric substrate. In order to further enhance the gain of the antenna and make the transmission distance of the antenna longer, it is designed to add a horn antenna structure on the front of the silicon lens to enable the silicon lens to collect more wireless signal information, so that the wireless signal is reflected by the side wall of the horn antenna and focused on the surface of the silicon lens, so as to further enhance the focusing effect of the silicon lens on the wireless signal, so that the planar antenna receives more energy. Similarly, when the antenna is used as a transmitting structure, the electromagnetic signal transmitted through the silicon lens is emitted through the side wall of the horn antenna, making the energy of the electromagnetic wave more concentrated and radiated, the antenna has better directivity, greater gain, and longer transmission distance.

[0084] The cascade gain-enhanced optically generated millimeter wave terahertz wave wireless signal transceiver provided by the embodiment of the present invention can be used at the transmitting end of the wireless signal or at the receiving end of the wireless signal. When it is used at the transmitting end of the millimeter wave / terahertz wave wireless signal, the optical fiber pigtail needs to be connected to the external light source, and the difference frequency optical signal of the external laser is converted into an electrical signal through PIN-PD, and the electrical signal is then converted into a radio electromagnetic wave signal by the planar antenna. The converted radio electromagnetic wave signal is radiated with high gain and high power through the horn structure antenna cascaded with the silicon lens. When it is used at the receiving end of the millimeter wave / terahertz wave wireless signal, the FA pigtail is vacant, and the electromagnetic wave wireless signal is focused on the silicon lens through the horn, and then further converged to the planar antenna by the silicon lens. The planar antenna converts the received electromagnetic wave signal into an electrical signal through PIN-PD and reads it out through the PCB circuit. Therefore, the design structure can realize the high gain radiation of the radio electromagnetic wave signal without replacing any chip, and can also realize the high sensitivity reception and detection of the radio electromagnetic wave signal.

[0085] The cascade gain-enhanced photogenerated millimeter-wave terahertz wave wireless signal transceiver improved in the embodiment of the present invention adopts a wireless signal cascade gain enhancement module including a silicon lens and a horn antenna and is integrated with a planar antenna combination, effectively overcoming the technical defect that a high-power RF amplifier must be used to make up for the insufficient transmission power in the traditional solution. At the same time, the antenna in the cascade gain-enhanced photogenerated millimeter-wave terahertz wave wireless signal transceiver provided by the solution can effectively overcome the surface wave effect of the medium and improve the gain of the antenna, thereby enabling the wireless signal to have a longer transmission distance.

[0086] The cascaded gain-enhanced photogenerated millimeter-wave terahertz wave wireless signal transceiver provided in the embodiment of the present invention has a simple structural design, is easy to process and realize, is convenient to disassemble and assemble, and has flexible usage scenarios. The designed planar antenna structure has higher directivity, narrower beam, and higher gain; the silicon lens cascaded horn antenna is used as a wireless signal cascade gain enhancement module in the embodiment of the present invention, which can be used as a wireless photon signal transmitter and a wireless photon signal receiver at the same time, which can not only enhance the power of the photogenerated millimeter-wave / terahertz wave wireless transmission signal but also improve the sensitivity of the wireless detection device; the cascaded gain-enhanced photogenerated millimeter-wave terahertz wave wireless signal transceiver provided in this scheme, when used as a transmitter, because the external light source is generated based on the frequency difference of the two light wave signals, therefore, when used as a transmitting device, the wireless signal frequency can be continuously tuned.

Claims

1. A cascade gain-enhanced optically generated millimeter-wave terahertz wave wireless signal transceiver, comprising: A metal housing, a PCB circuit board fixed in the metal housing, an optical fiber module located on the PCB circuit board, a PIN-PD integrated antenna chip, and a wireless signal cascade gain enhancement module connected to the metal housing, characterized in that: A wireless signal cascade gain enhancement module, comprising a silicon lens and a horn antenna both connected to the metal housing; The PIN-PD integrated antenna chip is mounted on a preset position of the silicon lens; The PIN-PD integrated antenna chip includes a planar antenna and a PIN-PD integrated together; The PIN-PD is located within a preset range of the center of the planar antenna; The planar antenna is composed of two sector antenna groups connected; Each sector antenna group is composed of a first sector antenna and a second sector antenna.

2. The cascade gain-enhanced optically generated millimeter-wave terahertz wave wireless signal transceiver according to claim 1, characterized in that: The planar antenna includes two sector antenna groups; The size of the sector antenna group is 5mm×5mm.

3. The cascade gain-enhanced optically generated millimeter-wave terahertz wave wireless signal transceiver according to claim 2, characterized in that: Each planar antenna group includes a first sector antenna and a second sector antenna; The radius of the first sector antenna is R1=1 mm, the center angle of the first sector antenna is θ=60°, the radius of the second sector antenna is R2=R1 / 1.5, and the center angle of the second sector antenna is d=0.17mm 。 4. The cascade gain-enhanced optically generated millimeter-wave terahertz wave wireless signal transceiver according to claim 1, characterized in that: The length L of the horn antenna is 75 mm; the expansion angle α of the horn antenna is 25°.

5. The cascade gain-enhanced optically generated millimeter-wave terahertz wave wireless signal transceiver according to claim 1, characterized in that: The silicon lens comprises a hemispherical portion and an extended portion, and the extended portion is cylindrical in shape; The radius of the circular cross section of the extended portion is the same as the radius of the hemispherical portion; the circular cross section of the extended portion is connected to the tangent plane of the hemispherical portion; The PIN-PD integrated antenna chip is mounted on the circular cross section of the extended portion that is away from the hemispherical portion.

6. The cascade gain-enhanced optically generated millimeter-wave terahertz wave wireless signal transceiver according to claim 5, characterized in that: The thickness of the extended portion in the silicon lens is 3.75 mm, and the radius of the hemispherical portion in the silicon lens is 15 mm.

7. The cascade gain-enhanced optically generated millimeter-wave terahertz wave wireless signal transceiver according to claim 1, characterized in that: The height H of the metal shell is 22 mm.

8. The cascade gain-enhanced optically generated millimeter-wave terahertz wave wireless signal transceiver according to claim 1, characterized in that: The optical fiber module comprises: A lower cover plate, located on the PCB circuit board, to support the optical fiber array FA; The optical fiber array FA is coupled and connected with the PIN-PD to transmit the photon wireless signal to the PIN-PD; The optical fiber pigtail is connected to both the optical fiber array FA and the external photon signal generating device to transmit the optical signal generated by the external photon signal generating device to the optical fiber array FA.

9. The cascade gain-enhanced optically generated millimeter-wave terahertz wave wireless signal transceiver according to claim 1, characterized in that: The PIN-PD integrated antenna chip further includes: The substrate layer is made of group III-V material, and the thickness of the substrate layer is 0.15 mm.

10. The cascade gain-enhanced optically generated millimeter-wave terahertz wave wireless signal transceiver according to claim 9, characterized in that: The silicon lens is made of high-resistance silicon material.

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