Use method of light absorption release composition and preparation method of semiconductor device

Abstract

A use method of the light absorption release composition comprises the following steps: (a) processing a to-be-processed layer of a laminated body comprising a support carrier, a release layer and the to-be-processed layer so as to enable the to-be-processed layer to form a processed layer; (b) after the step (a), irradiating the release layer through the support carrier by using pulse laser light; and (c) separating the support carrier from the processed layer simultaneously with or after step (b). The release layer is formed by a light absorption release composition. The light absorption release composition comprises a polymer (A), a light absorption agent (B) and a solvent (C). The polymer (A) is formed by reacting a mixture comprising a tetracarboxylic dianhydride component and a diamine component. The diamine component comprises at least one diamine compound selected from the following groups: a diamine compound as shown in a formula (I) and a diamine compound as shown in a formula (II). The invention also provides a manufacturing method of the semiconductor device. The manufacturing method comprises the step of processing the processed layer to form the semiconductor device. # imgabs0 #

Description

Technical Field

[0001] The present invention relates to a release composition, and in particular to a method for using the light absorbing release composition. Background Art

[0002] In the past, in order to prevent damage such as cracking of an object to be processed, such as a semiconductor chip, during processing such as back grinding, most methods are to temporarily fix the object to be processed on a support such as a glass substrate via a temporary fixing member, as disclosed in, for example, U.S. Patent Publication No. 2014 / 0106473 and Japanese Patent Publication No. 2013171949.

[0003] Then, after the processing is performed, the temporary fixing member is irradiated with radiation such as ultraviolet rays and infrared rays to weaken the adhesion of the temporary fixing member, thereby allowing the processed object to be separated from the support body.

[0004] However, when the temporary fixing part has poor light-shielding properties, the radiation will irradiate the object to be processed, which will have an adverse effect on the object to be processed. When the temporary fixing part has poor removability after light irradiation, it is easy to remain on the object to be processed after processing, which is not conducive to the subsequent processes of the object to be processed after processing. Summary of the invention

[0005] The first object of the present invention is to provide a method for using a light absorbing release composition.

[0006] Therefore, the method for using the light-absorbing release composition of the present invention comprises: step (a), applying a processing treatment to the to-be-processed layer of a laminate body so that the to-be-processed layer forms a processed layer, the laminate body defines a stacking direction, and sequentially comprises a support carrier, a temporary fixing unit including a release layer, and the to-be-processed layer in the stacking direction, and selectively performing a moving treatment on the laminate body before or after the processing treatment; step (b), after step (a), irradiating the release layer via the support carrier with a pulsed laser light; and step (c), simultaneously with step (b) or after step (b), separating the support carrier from the processed layer to obtain the processed layer;

[0007] The release layer is formed by a light absorbing release composition, and the light absorbing release composition includes a polymer (A), a light absorber (B) and a solvent (C); the polymer (A) is selected from a polyamic acid polymer, a polyimide polymer, a polyimide-based block copolymer or any combination thereof, and is formed by a condensation reaction of a mixture including a tetracarboxylic dianhydride component and a diamine component, and the diamine component includes at least one diamine compound selected from the following groups: a diamine compound represented by formula (I) and a diamine compound represented by formula (II);

[0008]

[0009] R 1 Indicates a single bond, -C(CH3)2-, -(CH2) n1 -、-C(CF3)2-、-O-(CH2) n2 -O-, -O-, -S-(CH2) n3 -S-, -S-, -SS-, -SO2-, -CO-, -CONH-, or -NHCO-, n1, n2 and n3 independently represent 1 to 12,

[0010] R 2 represents a single bond, -C(CH3)2-, -O-, -S-, -CO-, -C(CF3)2-, or a C1 to C10 alkylene group,

[0011] Any hydrogen on any benzene ring can be replaced by -F, -CH3, -CF3, -OH, or phenyl.

[0012]

[0013] R 3 Indicates a single bond, -C(CH3)2-, -(CH2) m1 -, -C(CF3)2-, -O-(CH2)m2-O-, -O-, -S-(CH2) m3 -S-, -S-, -SS-, -SO2-, -CO-, -CONH-, or -NHCO-, m1, m2 and m3 independently represent 1 to 12,

[0014] R 4 represents a single bond, -C(CH3)2-, -C(CF3)2-, -O-, -S-, -CO-, or a C1 to C10 alkylene group,

[0015] R 5 represents a single bond, -C(CH3)2-, -C(CF3)2-, -O-, -S-, -CO-, or a C1 to C10 alkylene group,

[0016] Any hydrogen on any benzene ring may be replaced by -F, -CH3, -CF3, -OH, or phenyl.

[0017] In the method for using the light absorbing release composition of the present invention, the wavelength of the pulsed laser light is below 400nm.

[0018] The method for using the light-absorbing release composition of the present invention is that the polymer (A) is a polyamic acid polymer.

[0019] The method for using the light absorbing release composition of the present invention comprises the light absorber (B) comprising a black pigment.

[0020] The method for using the light absorbing release composition of the present invention is to use the polymer (A) in an amount of

[0021] Based on 100 parts by weight, the amount of the light absorber (B) used is 5 parts by weight to 200 parts by weight, and the amount of the solvent (C) used is 500 parts by weight to 4000 parts by weight.

[0022] In the method for using the light-absorbing release composition of the present invention, the temporary fixing unit further comprises an adhesive layer, so that the laminated body sequentially comprises the supporting carrier, the release layer, the adhesive layer and the layer to be processed.

[0023] The second object of the present invention is to provide a method for preparing a semiconductor device.

[0024] Therefore, the method for preparing a semiconductor device of the present invention comprises: processing the processed layer obtained by the method for using the light absorbing release composition to form a semiconductor device.

[0025] The beneficial effects of the present invention are as follows: in the method for using the light-absorbing release composition of the present invention, by using at least one of the diamine compound represented by formula (I) of the diamine component and the polymer (A) formed by the diamine compound represented by formula (II), the release layer formed by the light-absorbing release composition of the present invention has better light-shielding properties, and the release layer can have better releasability after being irradiated with pulsed laser light. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] none. DETAILED DESCRIPTION

[0027] Modes for carrying out the present invention including preferred modes will be described below. Each component such as the compound exemplified in the following description may be used alone or in combination of two or more unless otherwise specified.

[0028] The method for using the light-absorbing release composition of the present invention comprises step (a), applying a processing treatment to a layer to be processed of a laminate so that the layer to be processed forms a processed layer, the laminate defines a stacking direction and sequentially comprises a supporting carrier, a temporary fixing unit including a release layer and the layer to be processed in the stacking direction, and the laminate is selectively moved before or after the processing treatment; step (b), after step (a), irradiating the release layer with pulsed laser light through the supporting carrier; and step (c), simultaneously with step (b) or after step (b), separating the supporting carrier from the processed layer to obtain the processed layer.

[0029] <Step (a)>

[0030] In the laminate, the layer to be processed is temporarily fixed on the support carrier via the temporary fixing unit. In one embodiment, the temporary fixing unit is clamped between the layer to be processed and the support carrier.

[0031] Between carriers.

[0032] In step (a), a step of forming a laminated body is also included. The step of forming the laminated body, for example, forms the temporary fixing unit on the surface of the support carrier and / or the layer to be processed, and the layer to be processed and the support carrier are bonded together by the temporary fixing unit, so as to temporarily fix the layer to be processed on the support carrier. Alternatively, the layer to be processed can be temporarily fixed on the support carrier by forming the temporary fixing unit on the surface of the support carrier and forming the layer to be processed such as a resin coating or a wiring layer on the temporary fixing unit.

[0033] The temporary fixing unit may further include an adhesive layer, that is, the laminate includes the support carrier, the release layer, the adhesive layer and the to-be-processed layer in sequence. Due to the presence of the adhesive layer, the adverse effect of the to-be-processed layer on the to-be-processed layer caused by the heat generated by the release layer irradiated by light can be suppressed.

[0034] In order to form the release layer and the adhesive layer, for example, a release composition for forming a release layer and an adhesive composition for forming an adhesive layer can be used respectively. The coating methods of these compositions are, for example, spin coating, inkjet, slit coating and vapor deposition. After coating each composition to form a coating film, the release layer or the adhesive layer is formed by evaporating the solvent, for example, by heating. The conditions of the heat treatment can be adjusted according to the boiling point of the solvent (C), and the temperature of the heat treatment is, for example, 100°C to 350°C and the time is, for example, 1 minute to 60 minutes. When the temporary fixing unit does not include the adhesive layer, the method of forming the laminate includes, for example, forming a release layer on the surface of the supporting carrier and forming the layer to be processed on the release layer, or bonding them together.

[0035] In addition, when the temporary fixing unit includes the adhesive layer, the method for forming the laminated body is, for example, method 1, method 2 or method 3. In method 1, the adhesive layer is formed on the surface of the layer to be processed, and the release layer is formed on the surface of the supporting carrier, and then they are bonded together. In method 2, the adhesive layer and the release layer are sequentially formed on the surface of the layer to be processed, and the release layer is bonded to the supporting carrier. In method 3, the release layer and the adhesive layer are sequentially formed on the surface of the supporting carrier, and the adhesive layer is bonded to the layer to be processed. From the viewpoint of avoiding mixing of the adhesive layer and the release layer when forming each layer, preferably, the method for forming the laminated body is method 1.

[0036] In the above-mentioned method for forming a laminated body, it is preferred to apply pressure when the layer to be processed and the support carrier are attached together. This can be done in the stacking direction of each component of the laminated body, and the conditions for pressing the layer to be processed and the support carrier via the temporary fixing unit are, for example, preferably 15°C to 400°C, more preferably 150°C to 400°C, 1 minute to 20 minutes, and 0.01MPa to 100MPa. After attaching, a heat treatment is preferably performed at 150°C to 300°C for 10 minutes to 3 hours.

[0037] [Layer to be processed]

[0038] The layer to be processed is, for example, a semiconductor wafer, a semiconductor chip, a glass substrate, a resin substrate, a metal substrate, a metal foil, a grinding pad, a resin coating or a wiring layer. For the semiconductor wafer and the semiconductor chip, at least one structure can be formed or installed, and the structure is, for example, a copper column, wiring, a through hole, a through hole channel, an insulating film and various components. For the glass substrate, the resin substrate, and the metal substrate, various components can also be formed or installed. The resin coating includes, for example, a layer containing an organic component as the main component. Specifically, the resin coating is, for example, a photosensitive resin layer formed by a photosensitive material, an insulating resin layer formed by an insulating material, or a photosensitive insulating resin layer formed by a photosensitive insulating resin material.

[0039] The following is an explanation of the layer to be processed having a wiring layer. In this process, the temporary fixing unit is formed on the support carrier, and then, a layer to be processed having at least a wiring layer is formed on the temporary fixing unit, and the layer to be processed having a wiring layer is, for example, independent of a layer body on a semiconductor wafer or a semiconductor chip, and then, a semiconductor wafer or a semiconductor chip is configured on the wiring layer, and the semiconductor wafer or the semiconductor chip includes a wafer substrate and a plurality of semiconductor elements formed on the wafer substrate. The wiring layer is electrically connected to the semiconductor wafer or the semiconductor chip, and serves as a redistribution layer of the semiconductor wafer or the semiconductor chip. The present invention can also be applied to the Redistribution Layer-First (RDL-First) structure in the fan-out wafer level packaging (Fan-Out Wafer Level Package, referred to as FO-WLP) technology.

[0040] The wiring layer includes an insulating portion, a wiring portion, and a connecting conductor portion connected to the electrode of the semiconductor wafer or the semiconductor chip. The semiconductor wafer or the semiconductor chip is placed on the wiring layer, and is electrically connected to the connecting conductor portion of the wiring layer and the electrode of the semiconductor wafer or the semiconductor chip through connecting parts such as welding, anisotropic conductive paste, anisotropic conductive film, etc. When there is a gap between the semiconductor wafer or the semiconductor chip and the wiring layer, it can be filled with a filler material.

[0041] The internal structure of the wiring layer is not particularly limited. The materials of the wiring part and the connecting conductor part are metals such as copper, gold, silver, platinum, lead, tin, nickel, cobalt, indium, rhenium, chromium, tungsten, ruthenium, and alloys composed of at least two of the above metals. The material of the insulating part is, for example, a synthetic resin. The synthetic resin is, for example, a polyimide resin, an acrylic resin, a polyether nitrile resin, a polyether sulfone resin, an epoxy resin, a polyethylene terephthalate resin, a polyethylene naphthalate resin, or a polyvinyl chloride resin. The thickness of the wiring layer is generally 1 μm to 1,000 μm.

[0042] Subsequently, for example, the semiconductor wafer or chip is resin-sealed in step (a), and the temporary fixing unit and the wiring layer are separated in step (c) described later, thereby obtaining a semiconductor device including the semiconductor wafer or chip and the wiring layer (i.e., redistribution layer).

[0043] In addition, the configuration of the layer to be processed on the temporary fixing unit, or the configuration of the semiconductor wafer or the semiconductor chip on the wiring layer in the process of forming the wiring layer, can also be performed after alignment based on the position information of each component obtained by measuring light.

[0044] To prevent the to-be-processed layer from deteriorating, preferably, the measuring light is light with a wavelength of 600nm to 900nm. Preferably, the measuring light is light with a wavelength of 633nm, 670nm or 830nm. Preferably, the light source providing the measuring light is a visible light semiconductor laser or a light emitting diode.

[0045] The alignment is performed in the following manner. For the release layer, the release layer includes a film layer of a light absorber that absorbs the measurement light. Therefore, when the measurement light irradiates the release layer, it is possible to detect the absorption of the measurement light by the release layer and the decrease in the intensity of the measurement light, thereby obtaining the position information of the release layer. The installation position of the light sensor for irradiating and detecting the measurement light is not particularly limited. Based on the obtained position information, the temporary fixing unit and the layer to be processed are aligned, and the wiring layer and the semiconductor wafer or the semiconductor chip are aligned.

[0046] Examples of the light source of the light emitting unit include semiconductor lasers and light emitting diodes, and examples of the light receiving unit include light sensors such as photodiodes and phototransistors. Image sensors include CCD image sensors and CMOS image sensors. Examples of the device for moving each component include a robot arm.

[0047] [Support carrier]

[0048] Since the pulse laser light in step (b) irradiates the release layer through the support carrier to deteriorate the release layer, preferably, the support carrier is a support substrate that can allow pulse laser light with a wavelength below 400nm to pass through. Preferably, the support carrier has a pass rate of more than 50% for pulse laser light with a wavelength of 355nm, more preferably, a pass rate of 70% to 100%, and even more preferably, a pass rate of 80% to 100%.

[0049] The substrate may be a glass substrate, a quartz substrate or a transparent resin substrate, etc. The thickness of the support carrier is not particularly limited, for example, 0.1 mm to 2 mm.

[0050] [Release layer]

[0051] The release layer is a film layer that will deteriorate by absorbing pulsed laser light with a wavelength below 400nm. When the pulsed laser light irradiates the release layer, the release layer absorbs the pulsed laser light and deteriorates by decomposing the polymer (A) and other substances. Due to this deterioration, the strength and adhesion of the release layer will decrease after light irradiation. When an external force is applied to the laminate, cohesion failure will occur inside the release layer, or interfacial failure will occur between the release layer and the layer in contact with the release layer. Therefore, by applying an external force to the laminate treated by pulsed laser light irradiation, the support carrier and the processed layer can be easily separated.

[0052] In the present invention, the deterioration of the release layer refers to the non-thermal deterioration caused by direct breaking of chemical bonds, similar to photochemical ablation, that is, the deterioration caused by absorbing light energy.

[0053] Examples of the processed layer include semiconductor wafers and semiconductor chips. They are generally light sensitive and may deteriorate when exposed to light. Preferably, the release layer is light-shielding so that the pulsed laser light does not reach the processed layer. At the wavelength of the pulsed laser light irradiated in step (b), for example, at a wavelength of 355 nm, the light transmittance of the release layer is preferably 30% or less, more preferably 0% to 10%, and more preferably 0% to 5%.

[0054] The light transmittance of the release layer can be measured by the following method: a layer body consisting of a transparent substrate and the release layer is formed. A spectrophotometer is used to perform baseline correction on the transparent substrate as needed, and the light transmittance (%) of the layer body is measured to obtain the light transmittance (%) of the release layer.

[0055] The thickness of the release layer is, for example, less than 2 microns, preferably, 0.1 microns to 2 microns, and more preferably, 0.2 microns to 1.5 microns. When the thickness of the release layer is within the above range, it can be more effectively deteriorated by the pulsed laser light and protect the processed layer from the pulsed laser light. In addition, the release layer should have sufficient adhesion to be temporarily fixed on the support carrier, and the support carrier and the release layer will not separate during step (a).

[0056] The release layer is formed by a light absorbing release composition, and the light absorbing release composition comprises a polymer (A), a light absorber (B) and a solvent (C).

[0057] <Polymer (A)>

[0058] The polymer (A) is selected from polyamic acid polymers, polyimide polymers, polyimide-based block copolymers, or any combination thereof. In some embodiments of the present invention, the polyimide-based block copolymer is selected from polyamic acid block copolymers, polyimide block copolymers, polyamic acid-polyimide block copolymers, or any combination thereof. In order to make the release layer formed by the light absorbing release composition have better light-shielding properties, preferably, the polymer (A) is a polyamic acid polymer.

[0059] In some embodiments of the present invention, the polymer (A) is formed by reacting a mixture, and the mixture includes a tetracarboxylic dianhydride component (a) and a diamine component (b).

[0060] The tetracarboxylic dianhydride component (a) comprises at least one tetracarboxylic dianhydride compound, and the tetracarboxylic dianhydride compound is selected from aliphatic tetracarboxylic dianhydride compounds, alicyclic tetracarboxylic dianhydride compounds, or aromatic tetracarboxylic dianhydride compounds.

[0061] The aliphatic tetracarboxylic dianhydride compound can be, for example but not limited to, ethanetetracarboxylic dianhydride or butanetetracarboxylic dianhydride.

[0062] The alicyclic tetracarboxylic dianhydride compound is, for example, but not limited to, 1,3-dimethyl-1,2,3,4-cyclobutanetetracarboxylic dianhydride, 1,2-dimethyl-1,2,3,4-cyclobutanetetracarboxylic dianhydride, 1,3-dichloro-1,2,3,4-cyclobutanetetracarboxylic dianhydride, 1,2,3,4-cyclobutanetetracarboxylic dianhydride, 1,2,3,4-tetramethyl-1,2,3,4-cyclobutanetetracarboxylic dianhydride. , 1,2,3,4-cyclopentanetetracarboxylic dianhydride, 1,2,4,5-cyclohexanetetracarboxylic dianhydride, 3,3',4,4'-dicyclohexyltetracarboxylic dianhydride, 2,3,5-tricarboxycyclopentylacetic dianhydride, cis-3,7-dibutylcycloheptyl-1,5-diene-1,2,5,6-tetracarboxylic dianhydride, or bicyclo[2.2.2]-oct-7-ene-2,3,5,6-tetracarboxylic dianhydride, etc.

[0063] The aromatic tetracarboxylic dianhydride compound is, for example, but not limited to, 3,4-dicarboxy-1,2,3,4-tetrahydronaphthalene-1-succinic dianhydride, benzene tetracarboxylic dianhydride, 2,2',3,3'-benzophenone tetracarboxylic dianhydride, 3,3',4,4'-benzophenone tetracarboxylic dianhydride, 3,3',4,4'-biphenyl sulfone tetracarboxylic dianhydride, 1,4,5,8-naphthalene tetracarboxylic dianhydride, 2,3,6,7-naphthalene tetracarboxylic dianhydride, 3,3'-4,4'-diphenylethane tetracarboxylic dianhydride, 3,3',4,4'-dimethyldiphenylsilane tetracarboxylic dianhydride, 3,3',4,4'-tetraphenylsilane tetracarboxylic dianhydride, 1,2,3,4-furan tetracarboxylic dianhydride, 2,3,3',4'-diphenyl ether tetracarboxylic dianhydride, 3,3',4 ,4'-diphenylether tetracarboxylic dianhydride, 4,4'-bis(3,4-dicarboxyphenoxy)diphenyl sulfide dianhydride, 2,3,3',4'-diphenyl sulfide tetracarboxylic dianhydride, 3,3',4,4'-diphenyl sulfide tetracarboxylic dianhydride, 4,4'-bis(3,4-dicarboxyphenoxy)diphenyl sulfone dianhydride, 4,4'-bis(3,4-dicarboxyphenoxy)diphenyl propane dianhydride, 3,3',4,4'-perfluoroisopropylidene diphthalic acid dianhydride, 2,2',3,3'-diphenyltetracarboxylic dianhydride, 2,3,3',4'-diphenyltetracarboxylic dianhydride, 3,3',4,4'-diphenyltetracarboxylic dianhydride, bis(phthalic acid)phenylphosphine oxide dianhydride, p-phenylene-bis(triphenylphthalic acid) dianhydride, m-phenylene-bis(triphenylphthalic acid) 1,4-Butanediol-bis(anhydrotrimellitate), 1,6-hexanediol-bis(anhydrotrimellitate), 1,8-octanediol-bis(anhydrotrimellitate), 2,2-bis(4-hydroxyphenyl)propane-bis(anhydrotrimellitate), 2,3,4,5-tetrahydrofuran tetracarboxylic acid dianhydride, 1,3,3a,4,5,9b-hexahydro-5-(tetrahydro-2,5-dioxo-3-furyl)-naphtho[1,2-c]-furan-1,3-dione, 1,3,3a,4 ,5,9b-hexahydro-5-methyl-5-(tetrahydro-2,5-dioxo-3-furanyl)-naphtho[1,2-c]-furan-1,3-dione, 1,3,3a,4,5,9b-hexahydro-5-ethyl-5-(tetrahydro-2,5-dioxo-3-furanyl)-naphtho[1,2-c]-furan-1,3-dione, 1,3,3a,4,5,9b-hexahydro-7-methyl-5-(tetrahydro-2,5-dioxo-3-furanyl)-naphtho[1,2-c]-furan-1,3-dione, 1,3,3a,4,5,9b-hexahydro-7-ethyl-5-(tetrahydro-2,5-dioxo-3-furanyl)-naphtho[1,2-c]-furan-1,3-dione,3,3a,4,5,9b-hexahydro-8-methyl-5-(tetrahydro-2,5-dioxo-3-furanyl)-naphtho[1,2-c]-furan-1,3-dione, 1,3,3a,4,5,9b-hexahydro-8-ethyl-5-(tetrahydro-2,5-dioxo-3-furanyl)-naphtho[1,2-c]-furan-1,3-dione, 1,3,3a,4,5,9b-hexahydro-5,8-dimethyl-5-(tetrahydro-2,5-dioxo-3-furanyl)-naphtho[1,2-c]-furan-1,3-dione, or 5-(2,5-dioxotetrahydrofuranyl)-3-methyl-3-cyclohexene-1,2-dicarboxylic dianhydride, etc.

[0064] The diamine component (b) includes at least one diamine compound selected from the following group: a diamine compound represented by formula (I) and a diamine compound represented by formula (II).

[0065]

[0066] In formula (I), R 1 Indicates a single bond, -C(CH3)2-, -(CH2) n1 -、-C(CF3)2-、-O-(CH2) n2 -O-, -O-, -S-(CH2) n3 -S-, -S-, -SS-, -SO2-, -CO-, -CONH-, or -NHCO-, n1, n2, and n3 independently represent 1 to 12. 2 represents a single bond, -C(CH3)2-, -C(CF3)2-, -O-, -S-, -CO-, or a C1 to C10 alkylene group. Any hydrogen on any benzene ring may be substituted by -F, -CH3, -CF3, -OH or a phenyl group. The diamine compound represented by the formula (I) is, for example wait.

[0068] In formula (II), R 3 Indicates a single bond, -C(CH3)2-, -(CH2) m1 、-C(CF3)2-、-O-(CH2) m2 -O-, -O-, -S-(CH2) m3 -S-, -S-, -SS-, -SO2-, -CO-, -CONH-, or -NHCO-, m1, m2 and m3 independently represent 1 to 12. 4represents a single bond, -C(CH3)2-, -C(CF3)2-, -O-, -S-, -CO-, or a C1 to C10 alkylene group. 5 represents a single bond, -C(CH3)2-, -C(CF3)2-, -O-, -S-, -CO-, or a C1 to C10 alkylene group. Any hydrogen on any benzene ring may be substituted by -F, -CH3, -CF3, -OH, or a phenyl group. The diamine compound represented by the formula (II) is, for example

[0069] wait. In the formula (II-9), m1 represents 1 to 12, and m4 and m5 independently represent 1 to 2. In the formula (II-10), m1 represents 1 to 12.

[0071] In some embodiments of the present invention, based on 100 mol of the total amount of the diamine component (b), the amount of the diamine compound represented by formula (I) or formula (II) is 70 mol to 100 mol, preferably 75 mol to 100 mol, and more preferably 80 mol to 100 mol. When the diamine compound represented by formula (I) or formula (II) is not used, the release layer formed by the light absorbing release composition has poor releasability after irradiation with pulsed laser light.

[0072] In some embodiments of the present invention, the diamine component (b) further comprises at least one other diamine compound, and the other diamine compound is, for example, 1,2-diaminoethane, 1,3-diaminopropane, 1,4-diaminobutane, 1,5-diaminopentane, 1,6-diaminohexane, 1,7-diaminoheptane, 1,8-diaminooctane, 1,9-diaminononane, 1,10-diaminodecane, 4,4'-diaminoheptane, 1,3-diamino-2,2-dimethylpropane, 1,6-diamino-2,5-dimethylhexane, 1,7-diamino-2,5-dimethylheptane, 1,7-diamino-4,4-dimethylheptane, 1,7-diamino-3-methylheptane. , 1,9-diamino-5-methylnonane, 2,11-diaminododecane, 1,12-diaminooctadecane, 1,2-bis(3-aminopropoxy)ethane, 4,4'-diamino-3,3'-dimethyldicyclohexylamine, 1,3-diaminocyclohexane, 1,4-diaminocyclohexane, isophoronediamine, tetrahydrodicyclopentadienediamine, tricyclo(6.2.1.02,7)-undecenedimethyldiamine, 4,4'-methylenebis(cyclohexylamine), 4,4'-diaminodiphenylmethane, 4,4'-diaminodiphenylethane, 4,4'-diaminodiphenylsulfone, 4,4'-diaminobenzanilide, 4,4'-diaminodiphenylether, 3,4'-diamino Diphenyl ether, 1,5-diaminonaphthalene, 5-amino-1-(4'-aminophenyl)-1,3,3-trimethylhydroindene, 6-amino-1-(4'-aminophenyl)-1,3,3-trimethylhydroindene, hexahydro-4,7-methanoindene dimethylenediamine, 3,3'-diaminobenzophenone, 3,4'-diaminobenzophenone, 4,4'-diaminobenzophenone, 2,2-bis(4-aminophenyl)hexafluoropropane, 1,5-bis(4-aminophenoxymethylene)adamantane, 9,9-bis(4-aminophenyl)-10-hydroanthracene, 9,10-bis(4-aminophenyl)anthracen[9,10-bis(4-aminophenyl)anthracen[9,10-bis(4-aminophenyl) cene], 2,7-diaminofluorene, 9,9-bis(4-aminophenyl)fluorene, 4,4'-methylene-bis(2-chloroaniline), 5-[4-(4-n-pentylcyclohexyl)cyclohexyl]phenylmethylene-1,3-diaminobenzene{5-[4-(4-n-pentylcyclohexyl)cyclohexyl]phenylmethylene-1,3-diaminobenzene}, 1,1-bis[4-(4-aminophenoxy)phenyl]-4-(4-ethylphenyl)cyclohexane{1,1-bis[4-(4-aminophenoxy)phenyl]-4-(4-ethyl phenyl)cyclohexane}, 3,5-diaminobenzoic acid, 2,5-diaminobenzoic acid, bis(4-aminophenoxy)methane, 1,2-bis(4-aminophenoxy)ethane, 1,3-bis(4-aminophenoxy)propane, 1,3-bis(3-aminophenoxy)propane, 1,4-bis(4-aminophenoxy)butane, 1,4-bis(3-aminophenoxy)butane, 1,5-bis(4-aminophenoxy)pentane, 1,5-bis(3-aminophenoxy)pentane, 1,6-bis(4-aminophenoxy)hexane, 1,6-bis(3-aminophenoxy)hexane 1,7-bis(4-aminophenoxy)heptane, 1,7-bis(3-aminophenoxy)heptane, 1,8-bis(4-aminophenoxy)octane, 1,8-bis(3-aminophenoxy)octane, 1,9-bis(4-aminophenoxy)nonane, 1,9-bis(3-aminophenoxy)nonane, 1,10-bis(4-aminophenoxy)decane, 1,10-bis(3-aminophenoxy)decane, 1,11-bis(4-aminophenoxy) 1,11-bis(3-aminophenoxy)undecane, 1,12-bis(4-aminophenoxy)dodecane, 1,12-bis(3-aminophenoxy)dodecane, p-diaminobenzene, m-diaminobenzene, o-diaminobenzene, 2,5-diaminotoluene, 4,4'-diaminobiphenyl, 2,2'-dimethyl-4,4'-diaminobiphenyl, 3,3'-dimethyl-4,4'-diaminobiphenyl, 3,3' -dimethoxy-4,4'-diaminobiphenyl, 2,2'-dichloro-4,4'-diaminobiphenyl, 3,3'-dichloro-4,4'-diaminobiphenyl, 2,2',5,5'-tetrachloro-4,4'-diaminobiphenyl, 2,2'-dichloro-4,4'-diamino-5,5'-dimethoxybiphenyl, 4,4'-diamino-2,2'-bis(trifluoromethyl)biphenyl, or 1,4-bis(4'-aminophenyl)benzene, etc. Preferably, the other diamine compound is selected from p-diaminobenzene, 2,5-diaminotoluene, 4,4'-diaminobiphenyl, 3,3'-dimethoxy-4,4'-diaminobiphenyl, or 1,4-bis(4'-aminophenyl)benzene. ,

[0073] In some embodiments of the present invention, the mixture further comprises a solvent (c) for dissolving the components in the mixture and the polymer (A). The solvent (c) is, for example, but not limited to, aprotic polar solvents or phenolic solvents. The aprotic polar solvent is, for example, but not limited to, N-methyl-2-pyrrolidone, N,N-dimethylacetamide, N,N-dimethylformamide, dimethyl sulfoxide, γ-butyrolactone, tetramethyl urea, or hexamethylphosphoric triamine. The phenolic solvent is, for example, but not limited to, m-cresol, xylenol, phenol, or halogenated phenols. In some embodiments of the present invention, the amount of the solvent (c) is 200 to 2000 parts by weight based on 100 parts by weight of the mixture. In some embodiments of the present invention, the amount of the solvent (c) is 300 to 1800 parts by weight based on 100 parts by weight of the mixture.

[0074] When the polymer (A) is a polyamic acid polymer, the preparation method of the polymer (A) of the present invention can be carried out by a conventional method, such as method one or method two. The first method is to carry out a polycondensation reaction of the mixture at 0°C to 100°C for 1 hour to 24 hours to obtain a reaction mixture, and then the reaction mixture is introduced into an evaporator and subjected to a reduced pressure distillation treatment. The second method is to carry out a polycondensation reaction of the mixture at 0°C to 100°C for 1 hour to 24 hours to obtain a reaction mixture, and then the reaction mixture is contacted with a large amount of poor solvent to obtain a precipitate, and then the precipitate is subjected to a reduced pressure drying treatment.

[0075] In some embodiments of the present invention, the mixture also includes a poor solvent that does not cause the polyamic acid polymer to precipitate. The poor solvent can be used alone or in combination, and the poor solvent is, for example, but not limited to, an alcohol solvent, a ketone solvent, an ester solvent, an ether solvent, a halogenated hydrocarbon solvent, or a hydrocarbon solvent. The alcohol solvent is, for example, but not limited to, methanol, ethanol, isopropanol, cyclohexanol, ethylene glycol, propylene glycol, 1,4-butanediol, or triethylene glycol. The ketone solvent is, for example, but not limited to, acetone, methyl ethyl ketone, methyl isobutyl ketone, or cyclohexanone. The ester solvent is, for example, but not limited to, methyl acetate, ethyl acetate, butyl acetate, diethyl oxalate, diethyl malonate, or ethylene glycol ethyl ether acetate. The ether solvents include, but are not limited to, diethyl ether, ethylene glycol methyl ether, ethylene glycol ethyl ether, ethylene glycol n-propyl ether, ethylene glycol isopropyl ether, ethylene glycol n-butyl ether, ethylene glycol dimethyl ether, or diethylene glycol dimethyl ether. The halogenated hydrocarbon solvents include, but are not limited to, dichloromethane, 1,2-dichloroethane, 1,4-dichlorobutane, trichloroethane, chlorobenzene, or o-dichlorobenzene. The hydrocarbon solvents include, but are not limited to, tetrahydrofuran, hexane, heptane, octane, benzene, toluene, or xylene. In some embodiments of the present invention, the total amount of the diamine component (b) is 100 parts by weight, and the amount of the poor solvent is 0 to 60 parts by weight. Preferably, the total amount of the diamine component is 100 parts by weight, and the amount of the poor solvent is 0 to 50 parts by weight.

[0076] When the polymer (A) is a polyimide polymer, the preparation method of the polymer (A) of the present invention can adopt the conventional method, for example, the polyamic acid polymer is subjected to a dehydration ring-closing reaction (i.e., an imidization reaction) in the presence of a dehydrating agent and a catalyst, so that the amic acid in the polyamic acid polymer is converted into imide.

[0077] In order to obtain the polyamic acid polymer with an appropriate imidization rate, preferably, the operating temperature of the dehydration ring-closing reaction is 40° C. to 200° C., more preferably, 40° C. to 150° C. When the operating temperature of the dehydration ring-closing reaction is lower than 40° C., the imidization reaction is incomplete, thereby reducing the imidization degree of the polyamic acid polymer. However, when the operating temperature of the dehydration ring-closing reaction is higher than 200° C., the weight average molecular weight of the obtained polyimide polymer is low.

[0078] The dehydrating agent is, for example, an anhydride compound. The anhydride compound is, for example, acetic anhydride, propionic anhydride or trifluoroacetic anhydride. Based on the total amount of the polyamic acid polymer as 1 mole, the amount of the dehydrating agent used is 0.01 mole to 20 moles. The catalyst is, for example, a pyridine compound or a tertiary amine compound. The pyridine compound is, for example, pyridine, trimethylpyridine or dimethylpyridine. The tertiary amine compound is, for example, triethylamine. Based on the total amount of the dehydrating agent as 1 mole, the amount of the catalyst used is 0.5 mole to 10 moles.

[0079] In some embodiments of the present invention, the dehydration ring-closure reaction is carried out in the presence of a solvent. The solvent is, for example, the solvent (c) in the above-mentioned mixture, so it is not repeated. In some embodiments of the present invention, the total amount of the polyamic acid polymer is 100 parts by weight, and the amount of the solvent is 200 parts by weight to 2000 parts by weight. Preferably, the total amount of the polyamic acid polymer is 100 parts by weight, and the amount of the solvent is 300 parts by weight to 1800 parts by weight.

[0080] When the polymer (A) is a polyimide-based block copolymer, the preparation method of the polymer (A) of the present invention can adopt a conventional method, such as dissolving the reaction components in a solvent and performing a polycondensation reaction, wherein the reaction components include at least one of a polyamic acid polymer and a polyimide polymer.

[0081] The solvent is, for example, the solvent (c) in the above-mentioned mixture, so it is not repeated here. Further, the reaction components also include a tetracarboxylic dianhydride component and a diamine component. The tetracarboxylic dianhydride component and the diamine component are, for example, the tetracarboxylic dianhydride component (a) and the diamine component (b) mentioned above, so it is not repeated here.

[0082] In some embodiments of the present invention, preferably, the amount of the solvent is 200 to 2000 parts by weight, more preferably, 300 to 1800 parts by weight, based on 100 parts by weight of the total amount of the reaction components. In some embodiments of the present invention, preferably, the operating temperature of the polycondensation reaction is 0°C to 200°C, more preferably, 0°C to 100°C.

[0083] Preferably, the reaction components include, but are not limited to (1) two polyamic acid polymers having different terminal groups and different structures; (2) two polyimide polymers having different terminal groups and different structures; (3) polyamic acid polymers and polyimide polymers having different terminal groups and different structures; (4) polyamic acid polymers, tetracarboxylic dianhydride compounds and diamine compounds, wherein at least one of the tetracarboxylic dianhydride compounds and the diamine compounds has a different structure from the tetracarboxylic dianhydride compounds and the diamine compounds forming the polyamic acid polymer; (5) polyimide polymers, tetracarboxylic dianhydride compounds and diamine compounds, wherein at least one of the tetracarboxylic dianhydride compounds and the diamine compounds has a different structure from the tetracarboxylic dianhydride compounds and the diamine compounds forming the polyimide polymer; (6) polyamic acid polymers, polyimide polymers, tetracarboxylic dianhydride compounds (7) comprising two kinds of polyamic acid polymers, tetracarboxylic acid dianhydride compounds and diamine compounds having different structures; (8) comprising two kinds of polyimide polymers, tetracarboxylic acid dianhydride compounds and diamine compounds having different structures; (9) comprising two kinds of polyamic acid polymers having different structures and diamine compounds as terminal groups being acid anhydride groups; (10) comprising two kinds of polyamic acid polymers having different structures and tetracarboxylic acid dianhydride compounds as terminal groups; (11) comprising two kinds of polyimide polymers having different structures and acid anhydride groups as terminal groups; (12) comprising two kinds of polyimide polymers having different structures and amino groups as terminal groups;

[0084] Without affecting the efficacy of the present invention, preferably, the molecular weight of the polyamic acid polymer, the polyimide polymer and the polyimide-based block copolymer is adjusted to form a terminal-modified polymer. The terminal-modified polymer can improve the coating performance of the light-absorbing release composition.

[0085] The method for preparing the terminal modified polymer can be prepared by adding a monofunctional compound while the polyamic acid polymer is subjected to a polycondensation reaction. The monofunctional compound is, for example, but not limited to, a monoacid anhydride, a monoisocyanate compound, a monoamine compound, or the like. The monoacid anhydride is, for example, maleic anhydride, n-dodecyl succinic anhydride, phthalic anhydride, n-hexadecyl succinic anhydride, itaconic anhydride, n-tetradecyl succinic anhydride, or n-decyl succinic anhydride. The monoisocyanate compound is, for example, phenyl isocyanate or naphthyl isocyanate. The monoamine compound is, for example, n-butylamine, n-pentylamine, n-hexylamine, n-heptylamine, n-octylamine, n-nonylamine, n-decylamine, n-undecylamine, n-dodecylamine, n-tridecylamine, n-tetradecylamine, n-pentadecylamine, n-hexadecylamine, n-heptadecylamine, n-octadecylamine, n-eicosylamine, cyclohexylamine, or aniline.

[0086] In some embodiments of the present invention, according to gel permeation chromatography and using polystyrene as a standard, the polymer (A) has a weight average molecular weight of 5000 to 50000. Preferably, the polymer (A) has a weight average molecular weight of 8000 to 45000. More preferably, the polymer (A) has a weight average molecular weight of 10000 to 40000.

[0087] <Light Absorber (B)>

[0088] The release layer preferably includes a light absorber (B) that absorbs pulsed laser light with a wavelength of 400 nm or less. The light absorber (B) is, for example, a light absorber that absorbs light to cause changes such as decomposition of components of the release layer.

[0089] In addition, the light absorber (B) may use a polymer having a structure in a repeating unit that absorbs pulsed laser light of a wavelength of 400 nm or less. The polymer may be, for example, a polymer having a structure containing a conjugated π electron system, specifically, a polymer having a quinone structure, a polymer having a structure that forms a quinone structure by heat treatment, a benzene ring, a condensed ring, or a heterocyclic ring.

[0090] For example, the light absorber (B) more preferably has the following functions (a) and (b) at the same time. The function (a) is to absorb and separate the light used in the pulse laser light irradiation treatment in step (3) and cause the release layer to deteriorate. The function (b) is to absorb the measurement light (usually having a wavelength of 600 nm to 900 nm) used to detect the alignment of the release layer and each component when the components are arranged and stacked in the laminate.

[0091] The light absorber (B) can be used alone or in combination, and the absorber (B) is, for example, but not limited to, an organic light absorber, a phenolic varnish resin, or a black pigment. In some embodiments of the present invention, the absorber (B) comprises a black pigment. The organic light absorber is, for example, but not limited to, a benzotriazole-based light absorber, a hydroxyphenyltriazine-based light absorber, a benzophenone-based light absorber, a salicylic acid-based light absorber, a radiation-sensitive radical polymerization initiator, or a photosensitive acid generator. The phenolic varnish resin is, for example, but not limited to, a phenolic varnish (Phenol Novolak) or a naphthol phenolic varnish (naphthol novolak). The black pigment is not particularly limited, and preferably, the black pigment is a black pigment with heat resistance, light resistance, and solvent resistance. The black pigment can be used alone or in combination, and the black pigment is, for example, a light-shielding material, a black organic pigment, or a mixed organic pigment that is formed by mixing several pigments and is close to black. The light-shielding material is, for example, carbon black, chromium oxide, iron oxide, titanium black, or graphite. The carbon black is, for example, CI pigment black 7 or a commercial product manufactured by Mitsubishi Chemical (trade name MA100, MA230, MA8, #970, #1000, #2350, or #2650). The black organic pigment is, for example, perylene black, cyanine black, or aniline black. The pigment is, for example, a red pigment, a blue pigment, a green pigment, a purple pigment, a yellow pigment, a cyanine pigment, or a magenta pigment. The black pigment is, for example, CI pigment black 7, CI pigment black 31, CI pigment black 32, or CI pigment black 35. Preferably, the black pigment is carbon black, and the carbon black is, for example, commercially available product MA100 or MA230 manufactured by Mitsubishi Chemical Corporation.

[0092] In some embodiments of the present invention, the amount of the light absorber (B) is 5 to 200 parts by weight, based on the total amount of the polymer (A) being 100 parts by weight. Preferably, the amount of the light absorber (B) is 10 to 180 parts by weight, based on the total amount of the polymer (A) being 100 parts by weight. More preferably, the amount of the light absorber (B) is 20 to 150 parts by weight, based on the total amount of the polymer (A) being 100 parts by weight. When the light absorbing release composition does not contain the light absorber (B), the optical density of the release layer formed by the light absorbing release composition is poor, and the release layer has poor peelability after being irradiated with pulsed laser light.

[0093] <Solvent (C)>

[0094] The solvent (C) may be, for example, a solvent having affinity for polyamic acid and a derivative thereof or a solvent for improving coating properties.

[0095] The solvent having affinity for polyamic acid and its derivatives is, for example, an aprotic polar organic solvent. The aprotic polar organic solvent is, for example, 3-methoxy-N,N-dimethylpropanamide, N-methyl-2-pyrrolidone, dimethyl imidazolidinone, N-methyl caprolactam, N-methylpropionamide, N,N-dimethylacetamide, dimethylsulfoxide, N,N-dimethylformamide, N,N-diethylformamide, diethylacetamide or lactone.

[0096] Page 18 / 33

[0097] The lactone is, for example, γ-butyrolactone.

[0098] The solvent used to improve coating properties is, for example, but not limited to, iacetone alcohol, alkyl lactate, 3-methyl-3-methoxybutanol, tetraline, isophorone, ethylene glycol monoalkyl ether, diethylene glycol monoalkyl ether, phenylacetate, triethylene glycol monoalkyl ether, propylene glycol monoalkyl ether, dialkyl malonate, dipropylene glycol monoalkyl ether, or ester compound, etc. The ethylene glycol monoalkyl ether is, for example, ethylene glycol monobutyl ether. The diethylene glycol monoalkyl ether is, for example, diethylene glycol monoethyl ether. The propylene glycol monoalkyl ether is, for example, propylene glycol monomethyl ether or propylene glycol monobutyl ether. The dialkyl malonate is, for example, diethyl malonate. The dipropylene glycol monoalkyl ether is, for example, dipropylene glycol monomethyl ether. The ester compound is, for example, acetate.

[0099] Preferably, the solvent (C) is selected from 3-methoxy-N,N-dimethylpropionamide, diacetone alcohol, N-methyl-2-pyrrolidone, dimethylimidazolidinone, γ-butyrolactone, ethylene glycol monobutyl ether, diethylene glycol monoethyl ether, propylene glycol monobutyl ether, propylene glycol monomethyl ether or dipropylene glycol monomethyl ether.

[0100] In some embodiments of the present invention, based on 100 parts by weight of the total amount of the polymer (A), the amount of the solvent (C) is 500 to 4000 parts by weight. Preferably, based on 100 parts by weight of the total amount of the polymer (A), the amount of the solvent (C) is 600 to 3500 parts by weight. More preferably, based on 100 parts by weight of the total amount of the polymer (A), the amount of the solvent (C) is 800 to 3000 parts by weight.

[0101] The light absorbing release composition may further include at least one additive according to application requirements, and the additive may be, for example, an adhesive, an antioxidant, a polymerization inhibitor, an adhesion promoter, a surfactant, polystyrene cross-linked particles, a cross-linking agent or metal oxide particles.

[0102] [Preparation method of light absorbing release composition]

[0103] In some embodiments of the present invention, the method for preparing the light absorbing release composition of the present invention comprises mixing the polymer (A) and the light absorber (B) with the solvent (C) at a temperature of 0° C. to 200° C., and continuously stirring until dissolved. Preferably, the polymer (A) and the light absorber (B) are mixed with the solvent (C) at a temperature of 20° C. to 60° C.

[0104] [Adhesive layer]

[0105] Such a temporary fixing unit having two or more layers can have some well-balanced functions, such as protecting the surface circuit of the processed layer or the layer to be processed, the adhesion and separation between the support carrier and the processed layer or the layer to be processed, blocking the light used during light treatment, or having heat resistance during processing or light treatment, etc. In addition, due to the presence of the adhesive layer, it can be used to suppress the adverse effects of the processed layer or the layer to be processed caused by the heat generated by the release layer after light irradiation.

[0106] The adhesive layer can be formed using a known adhesive for forming an adhesive layer. The adhesive layer is used to temporarily fix the layer to be processed on the support carrier and cover and protect the surface of the layer to be processed.

[0107] The adhesive can be used alone or in combination, and the adhesive can be, for example, a thermoplastic resin adhesive, an elastic system adhesive, or a thermosetting resin adhesive, etc. The adhesive can be in solvent form, emulsion form, or hot melt form.

[0108] The thermoplastic resin in the thermoplastic resin adhesive is, for example, an olefin resin, a cycloolefin resin, a terpene resin, a rosin resin, a petroleum resin, polycaprolactone, a (meth) acrylic resin, polyvinyl chloride, an ethylene-vinyl acetate copolymer, a phenolic resin, a thermoplastic polyimide resin or a thermoplastic polyphenylimide resin. From the perspective of heat resistance, preferably, a cycloolefin resin is used. From the perspective of chemical resistance, preferably, at least one of a cycloolefin resin, a terpene resin, a rosin resin and a petroleum resin is used.

[0109] The elastomer in the elastic system adhesive may be, for example, (meth) acrylic rubber, nitrile rubber, polyurethane rubber or styrene butadiene rubber, etc. The thermosetting resin in the thermosetting resin adhesive may be, for example, epoxy resin, phenolic resin, urea-formaldehyde resin, melamine resin, unsaturated polyester resin, phthalate resin, polyurethane resin, silicone rubber, resin containing (meth) acrylate group, thermosetting polyimide resin or thermosetting polyphenylimide resin, etc.

[0110] The adhesive may further include at least one of an antioxidant, a polymerization inhibitor, an adhesion promoter, a surfactant, polystyrene cross-linked particles, a cross-linking agent and metal oxide particles according to application requirements.

[0111] Preferably, the thickness of the adhesive layer is 10 μm to 200 μm, more preferably, 15 μm to 100 μm, and even more preferably, 20 μm to 80 μm. When the thickness of the adhesive layer is within the above range, the adhesive layer can provide sufficient adhesion to temporarily fix the layer to be processed, and the adhesive layer will not separate from the layer to be processed during step (a).

[0112] In some embodiments of the present invention, in addition to the release layer and the adhesive layer, the temporary fixing unit may also include any other layer. For example, an intermediate layer may be provided between the release layer and the adhesive layer, and other layers may be provided between the release layer and the support carrier or between the adhesive layer and the layer to be processed. The temporary fixing unit consisting of the release layer and the adhesive layer is particularly preferred.

[0113] In step (a), it also includes moving the laminate before or after the processing. Moving refers to moving the layer to be processed, such as a semiconductor wafer, or the processed layer together with the support carrier from one device to another. The processing of the layer to be processed temporarily fixed on the support carrier includes, for example, thinning of the layer to be processed (such as cutting and back grinding), optical processing, stacking of semiconductor chips, installation of various components, and resin sealing. The optical processing is, for example, selected from at least one processing step such as forming a photolithography pattern, etching processing, sputtering film formation, electroplating processing, and electroplating reflow soldering. The etching processing and the sputtering film formation are usually carried out in a temperature range of 25°C to 300°C, while the electroplating processing and the electroplating reflow soldering are usually carried out in a temperature range of 225°C to 300°C. There is no special limitation on the processing of the layer to be processed, as long as it is carried out within a temperature range that does not reduce the adhesion of the temporarily fixed unit.

[0114] For example, in the above-mentioned RDL-First, a to-be-processed layer having at least a wiring layer is formed on the temporary fixing unit, and then at least one selected from a semiconductor wafer and a semiconductor chip is disposed on the wiring layer, and then the wiring layer is electrically connected to the semiconductor wafer or chip. Subsequently, the semiconductor wafer or chip is resin-sealed as required.

[0115] <Step (b)>

[0116] After step (a), the release layer is irradiated from one side of the support carrier with a pulsed laser light having a wavelength of less than 400 nm and a pulse width of less than 1 nanosecond. When the release layer is exposed to the pulsed laser light, the components in the release layer absorb the pulsed laser light and deteriorate, causing the release layer to degrade and reduce the strength and adhesion of the release layer. Therefore, after the release layer is irradiated with the pulsed laser light, the support carrier can be easily separated from the processed layer without heat treatment of the temporary fixing unit.

[0117] Pulsed laser light is laser light emitted from a pulsed laser generator. For the pulsed laser light, conditions that can cause the release layer to deteriorate are adopted. Laser decomposition (peeling) can be carried out through two mechanisms: photothermal peeling and photochemical peeling. The photochemical peeling mechanism can be carried out by using a pulsed laser light with a shorter wavelength and a smaller pulse width. Therefore, by using a pulsed laser light with a shorter wavelength and a smaller pulse width, the heat generated by the release layer due to light irradiation can be effectively suppressed, and damage to the processed layer can be prevented, and the separation process can be carried out smoothly. In particular, by setting the pulse width to less than 1 nanosecond, the peeling effect can be induced in a shorter time, so that thermal damage to the surrounding area can be minimized.

[0118] The wavelength of the pulsed laser light should be below 400nm. However, when the wavelength of the pulsed laser light is too short, the pulsed laser light will not be able to pass through the support carrier, causing the support carrier to heat up, and this heat will have a negative impact on the processed layer, so that the processed layer cannot be effectively processed. Therefore, the wavelength of the pulsed laser light is preferably between 300nm and 400nm. The wavelength of the pulsed laser light should be a wavelength that the release layer can absorb, so the wavelength used can be appropriately determined according to the material of the release layer.

[0119] The pulse width of the pulse laser light received by the release layer should be less than 1 nanosecond, preferably less than 100 picoseconds, and even more preferably less than 50 picoseconds. The lower limit of the pulse width is adjusted according to factors such as the laser intensity required to deteriorate the release layer, and is generally 1 to 5 picoseconds.

[0120] The average output power of the pulsed laser light is, for example, above 1 W. The irradiation spacing of the pulsed laser light is adjusted based on the condition that adjacent light spots do not overlap and the release layer can be degraded. The suitable spacing is 20 microns to 300 microns, and the more ideal spacing is 50 microns to 250 microns. The frequency of the pulsed laser light is preferably above 20 kHz, and the more ideal frequency is 30 kHz to 200 kHz.

[0121] The best situation is to evenly irradiate the entire release layer to change the quality of the release layer so that the support carrier can be easily separated from the processed layer. The release layer can also be locally irradiated with a pulsed laser beam.

[0122] In particular, it is more ideal to scan and irradiate the entire surface of the release layer from the support carrier side with a pulsed laser light, and it is more ideal to focus the pulsed laser light on the release layer. There is no particular limitation on the scanning method, for example, the pulsed laser light can be linearly irradiated in the X-axis direction on the XY plane of the release layer, and then the irradiation area can be moved in the Y-axis direction to irradiate the entire surface, or the pulsed laser light can be irradiated at an angle, and the irradiation part can be moved sequentially from the center to the periphery to the outside or from the periphery to the center to the inside to irradiate the entire surface.

[0123] The irradiation device may use various types of solid lasers, such as all-solid lasers such as YAG lasers, ruby ​​lasers, glass lasers, YVO4 lasers, LD lasers, fiber lasers, and optically excited semiconductor lasers; liquid lasers such as dye lasers; gas lasers such as CO2 lasers, excimer lasers, Ar lasers, and He-Ne lasers; and semiconductor lasers. As irradiation equipment capable of irradiating with the above-mentioned short pulse width, specifically, there are HyperRapid NX series, RAPID series, Talisker series, and FLARE NX manufactured by Coherent Japan Co., Ltd.

[0124] <Step (c)>

[0125] In step (c), a force is applied to the processed layer or the support carrier, for example, the processed layer is peeled off from the support carrier to separate the two. Preferably, the separation in step (c) is performed after the light irradiation in step (b) is completed, but the separation in step (c) can also be performed while the light irradiation in step (b) is performed.

[0126] The separation method may be, for example, the following methods. Method 1 is to apply an external force to the processed layer or the support carrier in a direction parallel to the surface of the processed layer, so as to separate the processed layer from the support carrier. Method 2 is to fix one of the processed layer and the support carrier, and lift the other at a certain angle from a direction parallel to the surface of the processed layer, so as to separate the processed layer from the support carrier.

[0127] In method one, the processed layer is made to slide horizontally on the surface of the supporting carrier while the supporting carrier is fixed, or the processed layer is separated from the supporting carrier by applying a force to the supporting carrier opposite to the force applied to the processed layer.

[0128] In method two, a slightly vertical force is applied to the surface of the processed layer to separate the processed layer from the supporting carrier. The "slightly vertical force" mentioned here refers to the vertical axis (usually the Z axis) relative to the surface of the processed layer, usually in the range of 0° to 60°, better in the range of 0° to 45°, further better in the range of 0° to 30°, even better in the range of 0° to 5°, especially 0°, that is, perpendicular to the surface of the processed layer. The direction perpendicular to the surface of the processed layer is usually the stacking direction of the various components that constitute the laminate. As a separation method, for example, the following method can be performed, lifting the periphery of the processed layer or the supporting carrier, and applying force in a direction roughly perpendicular to the surface of the processed layer, while peeling (hook-pull) from the periphery to the center in sequence.

[0129] In the above-mentioned separation process, it is usually carried out in a temperature range of 5°C to 100°C, more preferably in a range of 10°C to 45°C, and further preferably in a range of 15°C to 30°C. The temperature here refers to the temperature of the supporting carrier. In addition, when separating, in order to prevent damage to the processed layer, a reinforcing tape, such as a commercially available adhesive tape, may be attached to the reverse side of the temporary contact surface between the processed layer and the supporting carrier. In the present invention, as described above, the separation of the processed layer and the supporting carrier mainly occurs in the release layer. If the processed layer has bumps, the bumps must be prevented from being damaged during the separation process.

[0130] <Step (d)>

[0131] After the support carrier is separated from the processed layer, the temporary fixing unit, for example, including the adhesive layer and the release layer, can remain on the processed layer. After separation, the temporary fixing unit remaining on the processed layer can be removed by stripping treatment or by washing with a solvent.

[0132] In the present invention, by shortening the pulse width of the pulse laser light, the heat generated in the release layer irradiated by the light can be effectively suppressed. Therefore, when the temporary fixing unit includes the release layer and the adhesive layer, the release layer can be prevented from being irradiated by light and generating heat, which causes the adhesive layer to be degraded by thermal curing, etc., thereby making the peeling process difficult.

[0133] In order to peel off the temporary fixing unit, preferably use adhesive tape, and the adhesive force between the adhesive tape and the temporary fixing unit can be higher than the adhesive force between the processed layer and the temporary fixing unit. The temporary fixing unit can be removed by laminating the adhesive tape on the temporary fixing unit and peeling off the adhesive tape and the temporary fixing unit together.

[0134] The solvent cleaning method includes, for example, a method of immersing the processed layer in a solvent, a method of spraying the processed layer with a solvent, a method of applying ultrasonic waves while immersing the processed layer in a solvent, etc. The temperature of the solvent is not particularly limited, but is preferably 20°C to 80°C, and more preferably 20°C to 50°C.

[0135] The solvent in the solvent cleaning method is, for example, a sulfoxide solvent, a ketone solvent, an alcohol / ether solvent, an ester / lactone solvent or a hydrocarbon solvent. The sulfoxide solvent is, for example, dimethyl sulfoxide or diethyl sulfoxide. The ketone solvent is, for example, 3-methyl-2-pyrrolidone, N,N-dimethylpropionamide, 3-butyl-2-pyrrolidone, N-methyl-2-pyrrolidone, N-(2-methylpropyl)-2-pyrrolidone, N-(tert-butyl)-2-pyrrolidone, N-cyclohexyl-2-pyrrolidone, 2-heptanone, 3-heptanone, 4-heptanone, methyl isobutyl ketone, cyclopentanone or cyclohexanone. The alcohol / ether solvent is, for example, isopropanol, propylene glycol monomethyl ether, propylene glycol dimethyl ether, diethylene glycol monoethyl ether or diethylene glycol. The ester / lactone solvents include ethyl acetate, butyl ketone, isobutyl acetate, lactic acid ester, ethyl 3-ethoxypropionate, propylene glycol monomethyl ether acetate, diethylene glycol monoethyl ether acetate, methyl propyl acetate, ethyl vinylate, propyl acrylate or γ-butyrolactone, etc. The hydrocarbon solvents include xylene, pinene, methylcyclohexene, dipentene, pinene, tert-butyl-3,5-dimethylbenzene, tert-butylcyclohexane, hexyl-1-tert-butyl-3,5-dimethylbenzene or tert-butylcyclohexane, etc.

[0136] After the processed layer is separated from the support carrier, the processed layer may be further processed, for example, a bump is formed on the wiring layer of the RDL-First structure or the processed layer is cut into individual packages by dicing.

[0137] [Method for producing a semiconductor device]

[0138] The method for preparing a semiconductor device of the present invention comprises processing the processed layer obtained by the method for using the above-mentioned light absorbing release composition to form a semiconductor device. After the semiconductor device such as a semiconductor element obtained by processing the processed layer is peeled off from the support carrier, the temporary fixing unit can be easily removed by a peeling process or a solvent cleaning process. Therefore, in the semiconductor device, the degradation caused by light irradiation during peeling is small, and the contamination such as spots and burning caused by the temporary fixing unit is also reduced.

[0139] The present invention will be further described with reference to the following examples, but it should be understood that the examples are only for illustration and should not be construed as limitations on the implementation of the present invention.

[0140] Synthesis example 1

[0141] A nitrogen inlet, a stirrer, a condenser and a thermometer are set on a 500 ml four-necked conical flask, and nitrogen is introduced. Then, 100 moles of the diamine compound shown in formula (I-1) (referred to as b-1-1) and 80 grams of N-methyl-2-pyrrolidone (N-methyl-2-pyrrolidone, referred to as NMP) are introduced into the four-necked conical flask for mixing, and stirred at room temperature until the diamine compound shown in formula (I-1) is dissolved. Then, 100 moles of 2,2',3,3'-diphenyltetracarboxylic dianhydride (referred to as a-1) and 20 grams of NMP are added, and then reacted at room temperature for 6 hours to obtain a reaction solution. The reaction solution is poured into 1500 ml of water to obtain a precipitate. Then, filter to obtain a filter cake, and wash the filter cake with methanol, and repeat the above filtration and washing three times, then place it in a vacuum oven and dry it at a temperature of 60°C to obtain a polymer.

[0142] Synthesis Examples 2 to 14 and Comparative Synthesis Examples 1 to 2

[0143] The methods of Synthesis Examples 2 to 14 and Comparative Synthesis Examples 1 to 2 are similar to those of Synthesis Example 1, except that the types or amounts of the components are changed, see Tables 1 and 2.

[0144] Synthesis Example 15

[0145] A nitrogen inlet, a stirrer, a condenser and a thermometer are set on a 500 ml four-necked conical flask, and nitrogen is introduced. Then, 100 moles of the diamine compound represented by formula (II-2) (referred to as b-2-2) and 80 grams of N-methyl-2-pyrrolidone (NMP) are introduced into the four-necked conical flask for mixing, and stirred at room temperature until the diamine compound represented by formula (II-2) is dissolved. Next, 50 moles of 3,3',4,4'-diphenyltetracarboxylic dianhydride (referred to as a-2), 50 moles of 3,3',4,4'-dibenzophenonetetracarboxylic dianhydride (referred to as a-4) and 20 grams of NMP are added. The reaction was carried out at room temperature for 6 hours, and then 97 g of NMP, 0.03 mol of acetic anhydride and 0.05 mol of pyridine were added, the temperature was raised to 110°C, and stirring was continued for 2 hours to carry out imidization reaction to obtain a reaction solution. The reaction solution was poured into 1500 ml of water to obtain a precipitate. Then, the filter cake was filtered to obtain a filter cake, and the filter cake was washed with methanol, and the above filtration and washing were repeated three times. Then, it was placed in a vacuum oven and dried at a temperature of 60°C to obtain a polymer with an imidization rate of 35%.

[0146] Synthesis Example 16 and Comparative Synthesis Example 3

[0147] The methods of Synthesis Example 16 and Comparative Synthesis Example 3 are similar to those of Synthesis Example 15, except that the types or amounts of the components are changed, see Table 2.

[0148] Table 1

[0149]

[0150]

[0151] Table 2

[0152]

[0153]

[0154]

[0155] Example 1

[0156] 100 parts by weight of the polymer of Synthesis Example 1, 5 parts by weight of a light absorber (manufactured by Mitsubishi Chemical; trade name MA100), 300 parts by weight of N-methyl-2-pyrrolidone and 200 parts by weight of diacetone alcohol were mixed at room temperature to obtain a light absorbing release composition.

[0157] Examples 2 to 20 and Comparative Examples 1 to 4

[0158] The methods of Examples 2 to 20 and Comparative Examples 1 to 4 are similar to those of Example 1, except that the types or amounts of the components are changed, see Tables 3 to 5.

[0159] Evaluation Project

[0160] Stripping property measurement: The light absorbing release compositions of Examples 1 to 20 and Comparative Examples 1 to 4 were introduced into a coating machine (brand: MIKASA; model: MS-A150), and coated on a 100 mm×100 mm glass substrate by spin coating, and then dried under reduced pressure for 5 seconds at 100 mmHg. Subsequently, the compositions were placed in an oven and pre-baked at 100° C. for 2 minutes to form a pre-baked film with a thickness of about 1 μm. Then, the compositions were post-baked at 350° C. for 30 minutes to form a post-baked film with a thickness of 1.0 μm.

[0161] A laser irradiation device (brand: ESI Co.; model: 5331) was used to provide laser light with a wavelength of 355 nm, and the post-baked film was irradiated through the glass substrate to obtain a release film. The irradiation area was 10 mm × 100 mm, and the process was performed under the conditions of 4 W light output, 40 kHz repetition frequency, and 500 mm / s feed rate. Then, a tape was attached to the release film, and then the tape was torn off, and the release film was observed to remain on the glass substrate. Evaluation was performed according to the following standards:

[0162] O: The release film completely falls off from the glass substrate;

[0163] △: The release film has fallen off, but there is residue on the glass substrate;

[0164] X: The release film cannot be peeled off from the glass substrate.

[0165] Optical density (OD) measurement: The light absorbing release compositions of Examples 1 to 20 and Comparative Examples 1 to 4 were introduced into a coating machine (brand: MIKASA; model: MS-A150), and coated on a 100 mm×100 mm glass substrate by spin coating, and then subjected to a reduced pressure drying treatment at 100 mmHg for 5 seconds, then placed in an oven and pre-baked at 100° C. for 2 minutes to form a pre-baked film with a film thickness of about 1 μm, and then post-baked at 350° C. for 30 minutes to form a post-baked film with a film thickness of 1.0 μm.

[0166] The incident light intensity (I0) and the transmitted light intensity (I) of the post-baked film were measured using a micro-spectrometer (manufactured by Otsuka Electronics; model MCPD 2000). Then, the incident light intensity and the transmitted light intensity were converted into log10 (I0 / I) to calculate the optical density. The greater the optical density, the better the light-shielding property. Evaluation was performed according to the following criteria:

[0167] ◎: optical density ≧1;

[0168] O: 1> optical density ≧ 0.8;

[0169] △: 0.8> optical density ≧ 0.5;

[0170] ╳: optical density <0.5.

[0171] Table 3

[0172]

[0173]

[0174] Table 4

[0175]

[0176]

[0177] Table 5

[0178]

[0179]

[0180] It can be seen from Tables 3 to 5 that the polymer (A) in Examples 1 to 3, Examples 7 to 9, Examples 15 to 16 and Example 20 is prepared using one of the diamine compound represented by formula (I-1), the diamine compound represented by formula (I-2) and the diamine compound represented by formula (I-3). Therefore, the release layer formed by the light-absorbing release composition containing the polymer (A) has a high optical density, and the release layer can fall off without residue after being irradiated with light. Based on this, the release layer formed by the light-absorbing release composition containing the polymer (A) of the present invention does have better light-shielding properties and the release layer does have better releasability after being irradiated with light.

[0181] It can be seen from Tables 3 to 5 that the polymer (A) in Examples 4 to 6, Examples 10 to 12 and Examples 18 to 19 is prepared using one of the diamine compound represented by formula (II-1), the diamine compound represented by formula (II-2) and the diamine compound represented by formula (II-3). Therefore, the release layer formed by the light-absorbing release composition containing polymer (A) has a high optical density, and the release layer can fall off without residue after being irradiated with light. Based on this, the release layer formed by the light-absorbing release composition containing polymer (A) of the present invention does have better light-shielding properties and the release layer does have better releasability after being irradiated with light.

[0182] As can be seen from Table 4, the polymer (A) of Example 13 is prepared using the diamine compound represented by formula (I-2) and the diamine compound represented by formula (II-2), and the polymer (A) of Example 14 is prepared using the diamine compound represented by formula (I-1) and the diamine compound represented by formula (II-1). Therefore, the release layer formed by the light-absorbing release composition containing polymer (A) has a high optical density, and the release layer can fall off without residue after being irradiated with light. Based on this, the release layer formed by the light-absorbing release composition containing polymer (A) of the present invention does have better light-shielding properties and the release layer does have better releasability after being irradiated with light.

[0183] As can be seen from Table 5, in Example 17, a polymer (A) prepared from a diamine compound represented by formula (I-3) and a polymer (A) prepared from a diamine compound represented by formula (II-1) were used. Therefore, the release layer formed by the light-absorbing release composition comprising the polymer (A) has a high optical density, and the release layer can fall off without residue after being irradiated with light. Based on this, the release layer formed by the light-absorbing release composition comprising the polymer (A) of the present invention does have better light-shielding properties, and the release layer does have better releasability after being irradiated with light.

[0184] In contrast, let's look at Comparative Examples 1 to 4. In Comparative Examples 1 to 3, the polymers were not prepared using any of the diamine compound represented by formula (I-1), the diamine compound represented by formula (I-2), the diamine compound represented by formula (I-3), the diamine compound represented by (II-1), the diamine compound represented by formula (II-2), and the diamine compound represented by formula (II-3). Therefore, the release layer formed by the light-absorbing release composition containing the polymer has a low optical density and poor light-shielding properties, and the release layer is not easy to fall off after being irradiated with light and will remain, resulting in poor peelability.

[0185] In Comparative Example 4, although a polymer (A) prepared from a diamine compound represented by formula (I-2) is used, an absorbent (B) is not used. Therefore, the optical density of the release layer is low and the light-shielding property is poor. Furthermore, the release layer is not easy to fall off after being exposed to light and will remain, resulting in a poor peeling property.

[0186] In summary, by using the polymer (A) formed by at least one of the diamine compound represented by formula (I) and the diamine compound represented by formula (II) of the diamine component, the release layer formed by the light-absorbing release composition of the present invention has better light-shielding properties, and the release layer has better releasability after being irradiated with pulsed laser light, so the purpose of the present invention can be achieved.

Claims

1. A method for using a light absorbing release composition, characterized in that Include: The step (a) is to process the to-be-processed layer of the laminated body so that the to-be-processed layer forms a processed layer, wherein the laminated body defines a stacking direction and sequentially comprises a support carrier, a temporary fixing unit including a release layer, and the to-be-processed layer in the stacking direction, and the laminated body is selectively moved before or after the processing; Step (b), after step (a), irradiating the release layer via the support carrier with pulsed laser light; and Step (c), after step (a), simultaneously with step (b) or after step (b), separating the support carrier from the processed layer to obtain the processed layer; The release layer is formed by a light absorbing release composition, and the light absorbing release composition includes a polymer (A), a light absorber (B) and a solvent (C). The polymer (A) is selected from polyamic acid polymers, polyimide polymers, polyimide block copolymers or any combination thereof, and is obtained by reacting a mixture comprising a tetracarboxylic dianhydride component and a diamine component, wherein the diamine component comprises at least one diamine compound selected from the following groups: a diamine compound represented by formula (I) and a diamine compound represented by formula (II), R 1 Indicates a single bond, -C(CH3)2-, -(CH2) n1 -、-C(CF3)2-、-O-(CH2) n2 -O-, -O-, -S-(CH2) n3 -S-, -S-, -SS-, -SO2-, -CO-, -CONH-, or -NHCO-, n1, n2 and n3 independently represent 1 to 12, R 2 represents a single bond, -C(CH3)2-, -O-, -S-, -CO-, -C(CF3)2-, or a C1 to C10 alkylene group, Any hydrogen on any benzene ring can be replaced by -F, -CH3, -CF3, -OH, or phenyl. R 3 Indicates a single bond, -C(CH3)2-, -(CH2) m1 -、-C(CF3)2-、-O-(CH2) m2 -O-, -O-, -S-(CH2) m3 -S-, -S-, -SS-, -SO2-, -CO-, -CONH-, or -NHCO-, m1, m2 and m3 independently represent 1 to 12, R 4 represents a single bond, -C(CH3)2-, -C(CF3)2-, -O-, -S-, -CO-, or a C1 to C10 alkylene group, R 5 represents a single bond, -C(CH3)2-, -C(CF3)2-, -O-, -S-, -CO-, or a C1 to C10 alkylene group, Any hydrogen on any benzene ring may be replaced by -F, -CH3, -CF3, -OH, or phenyl.

2. The method for using the light absorbing release composition according to claim 1, wherein: The wavelength of the pulse laser light is 400 nm or less.

3. The method for using the light absorbing release composition according to claim 1, wherein: The polymer (A) is a polyamic acid polymer.

4. The method for using the light absorbing release composition according to claim 1, wherein: The light absorber (B) contains a black pigment.

5. The method for using the light absorbing release composition according to claim 1, wherein: Based on 100 parts by weight of the polymer (A), the light absorber (B) is used in an amount of 5 to 200 parts by weight, and the solvent (C) is used in an amount of 500 to 4000 parts by weight.

6. The method for using the light absorbing release composition according to any one of claims 1 to 5, characterized in that: The temporary fixing unit also includes an adhesive layer, so that the laminated body sequentially has the supporting carrier, the release layer, the adhesive layer and the layer to be processed.

7. A method for preparing a semiconductor device, comprising: processing a processed layer obtained by the method for using the light absorbing release composition according to any one of claims 1 to 6 to form a semiconductor device.

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