Three-dimensional stacked high-power frequency conversion SiP module and radio frequency channel system

Abstract

The invention discloses a three-dimensional stacked high-power frequency conversion SiP module and a radio frequency channel system, an upper ceramic substrate is stacked on a lower ceramic substrate, a cover plate and the lower ceramic substrate are sealed, and a first frequency conversion chipset and a first radio frequency signal transmission link layer are arranged on the upper ceramic substrate; a second frequency conversion chip set and a second radio frequency signal transmission link layer are arranged on the lower ceramic substrate, and high-power frequency conversion assembly integration and high-density miniaturized three-dimensional integration are realized through multi-layer high-density wiring, a blind buried hole process and a three-dimensional stacking three-dimensional integration technology, so that the size is reduced; meanwhile, the heat dissipation piece is arranged in the second through hole in the lower ceramic substrate, heat can be dissipated in time through the heat dissipation piece, stable operation of the high-power frequency conversion SiP module is ensured, and stability is improved.

Description

Technical Field

[0001] The present invention relates to the field of microwave and antenna technology, and in particular to a three-dimensional stacked high-power frequency conversion SiP module and a radio frequency channel system. Background Art

[0002] The high-power broadband frequency conversion SiP module is a device used for frequency conversion, which is mainly used to convert high-frequency signals into intermediate-frequency signals. It is widely used in radar systems, microwave communications, remote control, remote sensing and other fields. At present, the existing high-power frequency conversion modules are usually packaged using two-dimensional assembly technology. In order to meet the multi-functional requirements of channel integration, the complexity of the packaged components continues to increase. The increase in the complexity of the packaged components will lead to an increase in the system volume, and it will be difficult to miniaturize the volume of the packaged high-power frequency conversion components. This runs counter to the demand for miniaturization of the RF channel system and cannot meet the system miniaturization requirements. At the same time, due to the increasing complexity of the packaged components, the high energy consumption of the equipment, and the high heat generated, the existing high-power frequency conversion SiP can only dissipate heat through the internal space of the package, resulting in the inability of the high-power frequency conversion components to dissipate heat in time, affecting the normal operation of the function. Summary of the invention

[0003] The purpose of the present invention is to overcome the shortcomings of the prior art high-power broadband frequency conversion module, which is large in size, and the inability of conventional SiP to dissipate heat in time, and to provide a three-dimensional stacked high-power frequency conversion SiP module and a radio frequency channel system.

[0004] The technical solution of the present invention provides a three-dimensional stacked high-power frequency conversion SiP module, comprising an upper ceramic substrate and a lower ceramic substrate stacked in sequence, wherein a cover plate is provided around the upper ceramic substrate, the cover plate is covered on the top of the lower ceramic substrate, and the cover plate and the lower ceramic substrate are sealed. A first frequency conversion chipset is disposed on the top of the upper ceramic substrate, a first radio frequency signal transmission link layer electrically connected to the first frequency conversion chipset is disposed inside the upper ceramic substrate, a first through hole group penetrating the first radio frequency signal transmission link layer is disposed on the first radio frequency signal transmission link layer, and a first through hole metal is disposed inside the first through hole group; A groove with an upward opening is provided on the top of the lower ceramic substrate, a second through hole penetrating the lower ceramic substrate is provided on the lower ceramic substrate, a heat sink is provided in the second through hole, the heat sink seals the bottom of the second through hole, a second frequency conversion chipset is provided in the groove and on the top of the heat sink, a second RF signal transmission link layer electrically connected to the second frequency conversion chipset is provided inside the lower ceramic substrate, a third through hole group penetrating the second RF signal transmission link layer is provided on the second RF signal transmission link layer, a second through hole metal is provided in the third through hole group, and the first RF signal transmission link layer and the second RF signal transmission link layer are electrically connected through the first through hole metal and the second through hole metal.

[0005] In one of the optional technical solutions, the heat sink includes a metal boss, the top of the metal boss seals the second through hole, and the bottom of the metal boss at least partially protrudes from the bottom of the lower ceramic substrate.

[0006] In one of the optional technical solutions, at least one guide groove is provided on the back side of the metal boss, and opposite ends of the guide groove pass through opposite side edges of the metal boss.

[0007] In one of the optional technical solutions, a first solder ball array ball is provided between the upper ceramic substrate and the lower ceramic substrate, and the first through-hole metal and the second through-hole metal are electrically connected through the first solder ball array ball; A second solder ball array ball is disposed at the bottom of the lower ceramic substrate, the second solder ball array ball is electrically connected to the second through-hole metal, and the horizontal plane where the bottom of the heat sink is located is flush with the horizontal plane where the bottom of the second solder ball array ball is located.

[0008] In one of the optional technical solutions, the first radio frequency signal transmission link layer includes a first radio frequency layer, a first ground layer, a first digital layer, a second ground layer, a second radio frequency layer and a third ground layer, which are arranged in sequence from top to bottom; the second radio frequency signal transmission link layer includes a third radio frequency layer, a fourth ground layer, a second digital layer, a fifth ground layer, a fourth radio frequency layer, a sixth ground layer and a fifth radio frequency layer, which are arranged in sequence from top to bottom; The first solder ball array ball is disposed between the third ground layer and the third radio frequency layer, and the second solder ball array ball is disposed at the bottom of the fifth radio frequency layer. The output end of the first frequency conversion chipset is connected to the first solder ball array ball communication through the first RF layer and the third ground layer, the input end of the second frequency conversion chipset is connected to the first solder ball array ball communication, and the output end of the second frequency conversion chipset is connected to the second solder ball array ball communication through the fourth RF layer and the fifth RF layer.

[0009] In one of the optional technical solutions, the first frequency conversion chipset includes a first intermediate frequency bandpass filter, a low noise amplifier, a digitally controlled attenuator, an intermediate frequency low-pass filter, a first mixer, a second intermediate frequency bandpass filter, a first power amplifier, a second mixer, and a first switch filter group, which are communicatively connected in sequence; the second frequency conversion chipset includes a second power amplifier, a second switch filter group, a driving amplifier, and a power amplifier, which are communicatively connected in sequence; and the output end of the first switch filter group is communicatively connected to the input end of the second power amplifier.

[0010] In one of the optional technical solutions, the first switch filter group and the second switch filter group both include a switch and a plurality of frequency filters with different frequencies, and the switch controls the frequency filters to be connected according to the frequency.

[0011] In one of the optional technical solutions, the second power amplifier and the second switch filter group are arranged in the groove, and the driving amplifier and the power amplifier are arranged on the top of the heat sink.

[0012] In one of the optional technical solutions, a plurality of spacers are provided on the top of the upper ceramic substrate, and the plurality of spacers form a plurality of chambers between the cover plate and the upper ceramic substrate.

[0013] The technical solution of the present invention also provides a radio frequency channel system, including the three-dimensional stacked high-power frequency conversion SiP module as described above.

[0014] After adopting the above technical scheme, the following beneficial effects are achieved: the upper ceramic substrate is superimposed on the lower ceramic substrate, the cover plate and the lower ceramic substrate are sealed, and a first frequency conversion chipset and a first radio frequency signal transmission link layer are arranged on the upper ceramic substrate, and a second frequency conversion chipset and a second radio frequency signal transmission link layer are arranged on the lower ceramic substrate. Through multi-layer high-density wiring, blind buried hole process and three-dimensional stacking stereo integration technology, high-power frequency conversion components are integrated and high-density miniaturized stereo integration is achieved to reduce the volume; at the same time, a heat sink is arranged in the second through hole on the lower ceramic substrate, and the heat sink can dissipate heat in time to ensure the stable operation of the high-power frequency conversion components and improve the stability. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] The disclosure of the present invention will become more easily understood with reference to the accompanying drawings. It should be understood that these drawings are only for illustrative purposes and are not intended to limit the scope of protection of the present invention. In the drawings: Figure 1 A schematic diagram of the structure of a three-dimensional stacked high-power frequency conversion SiP module provided by an embodiment of the present invention; Figure 2 A schematic structural diagram of a three-dimensional stacked high-power frequency conversion SiP module provided by an embodiment of the present invention from another perspective; Figure 3 A schematic diagram of the circuit principle structure of a three-dimensional stacked high-power frequency conversion SiP module provided by an embodiment of the present invention; Figure 4 A schematic diagram of an S11 simulation curve of a three-dimensional stacked high-power frequency conversion SiP module provided in one embodiment of the present invention.

[0016] Reference table of reference numerals: 10-upper ceramic substrate; 11-first frequency conversion chipset; 111-first intermediate frequency bandpass filter; 112-low noise amplifier; 113-digital control attenuator; 114-intermediate frequency low-pass filter; 115-first mixer; 116-second intermediate frequency bandpass filter; 117-first power amplifier; 118-second mixer; 119-first switch filter group; 12-first RF signal transmission link layer; 121-first through-hole metal; 122-first RF layer; 123-first ground layer; 124-first digital layer; 125-second ground layer; 126-second RF layer; 127-third ground layer; 13-spacer; 20-lower ceramic substrate; 11-first frequency conversion chipset; 11-first frequency conversion chipset; 11-second frequency bandpass filter ... Ceramic substrate; 21-second through hole; 22-second frequency conversion chipset; 221-second power amplifier; 222-second switch filter group; 223-drive amplifier; 224-power amplifier; 23-metal boss; 231-guide groove; 24-second RF signal transmission link layer; 241-second through hole metal; 242-third RF layer; 243-fourth ground layer; 244-second digital layer; 245-fifth ground layer; 246-fourth RF layer; 247-sixth ground layer; 248-fifth RF layer; 30-cover; 40-first solder ball array ball; 50-second solder ball array ball; S1-switch; F1-frequency filter. DETAILED DESCRIPTION

[0017] The specific implementation of the present invention will be further described below in conjunction with the accompanying drawings.

[0018] It is easy to understand that according to the technical solution of the present invention, without changing the essential spirit of the present invention, a variety of structural modes and implementation modes that can be replaced by those skilled in the art can be replaced with each other. Therefore, the following specific implementation modes and drawings are only exemplary descriptions of the technical solution of the present invention, and should not be regarded as the whole of the present invention or as a limitation or restriction to the technical solution of the invention.

[0019] The directional terms such as up, down, left, right, front, back, front, back, top, bottom, etc. mentioned or may be mentioned in this specification are defined relative to the structures shown in the drawings. They are relative concepts and may change accordingly according to different positions and different usage conditions. Therefore, these or other directional terms should not be interpreted as restrictive terms.

[0020] like Figure 1-Figure 3 As shown, a three-dimensional stacked high-power frequency conversion SiP module provided by an embodiment of the present invention comprises an upper ceramic substrate 10 and a lower ceramic substrate 20 stacked in sequence, wherein a cover plate 30 is provided around the upper ceramic substrate 10, and the cover plate 30 covers the top of the lower ceramic substrate 20, and the cover plate 30 and the lower ceramic substrate 20 are sealed. A first frequency conversion chipset 11 is provided on the top of the upper ceramic substrate 10, a first RF signal transmission link layer 12 electrically connected to the first frequency conversion chipset 11 is provided inside the upper ceramic substrate 10, a first through hole group penetrating the first RF signal transmission link layer 12 is provided on the first RF signal transmission link layer 12, and a first through hole metal 121 is provided inside the first through hole group; A groove with an opening facing upward is provided on the top of the lower ceramic substrate 20, a second through hole 21 penetrating the lower ceramic substrate 20 is provided on the lower ceramic substrate 20, a heat sink is provided in the second through hole 21, the heat sink seals the bottom of the second through hole 21, a second frequency conversion chipset 22 is provided in the groove and on the top of the heat sink, a second RF signal transmission link layer 24 electrically connected to the second frequency conversion chipset 22 is provided inside the lower ceramic substrate 20, a third through hole group penetrating the second RF signal transmission link layer 24 is provided on the second RF signal transmission link layer 24, a second through hole metal 241 is provided in the third through hole group, and the first RF signal transmission link layer 12 and the second RF signal transmission link layer 24 are electrically connected through the first through hole metal 121 and the second through hole metal 241.

[0021] The three-dimensional stacked high-power frequency conversion SiP module provided by the present invention is applied to the frequency conversion of radio frequency signals to convert intermediate frequency signals into broadband high-power radio frequency signals.

[0022] The three-dimensional stacked high-power frequency conversion SiP module provided in this embodiment mainly includes an upper ceramic substrate 10 , a lower ceramic substrate 20 and a cover plate 30 .

[0023] The upper ceramic substrate 10 is stacked on the top of the lower ceramic substrate 20. The size of the upper ceramic substrate 10 is smaller than that of the lower ceramic substrate 20. The cover plate 30 is covered on the top of the lower ceramic substrate 20. The cover plate 30 can be sealed with the lower ceramic substrate 20 by sealing welding to achieve the airtightness of the three-dimensional stacked high-power frequency conversion SiP module. The cover plate 30 is made of metal.

[0024] The first frequency conversion chipset 11 is disposed on the top of the upper ceramic substrate 10 by using a die bonding process and is communicatively connected with the first radio frequency signal transmission link layer 12 .

[0025] The top of the lower ceramic substrate 20 is provided with a plurality of grooves, providing flip-chip pads, so that the middle area of ​​the top of the lower ceramic substrate 20 sinks and the surrounding area floats. The front of the second frequency conversion chipset 22 is arranged in the groove by a flip-chip process, and is directly interconnected with the lower ceramic substrate 20, so that the second frequency conversion chipset 22 is buried in the lower ceramic substrate 20, thereby reducing the height, reducing the volume, and reducing the transmission loss. The first frequency conversion chipset 11 and the second frequency conversion chipset 22 convert the intermediate frequency signal of the input baseband signal into a broadband high-power radio frequency signal. In this embodiment, the 1800±500MHz intermediate frequency signal can be converted twice by the first frequency conversion chipset 11 and the second frequency conversion chipset 22 to output a radio frequency signal with a frequency of 0.8-18GHz and a power greater than 10W.

[0026] In order to realize signal transmission between the first frequency conversion chipset 11 and the second frequency conversion chipset 22, a first RF signal transmission link layer 12 is provided in the upper ceramic substrate 10. The first RF signal transmission link layer 12 is used to transmit signals. A first through-hole group penetrating the first RF signal transmission link layer 12 is provided on the first RF signal transmission link layer 12, and a first through-hole metal 121 is provided in the first through-hole group. A second RF signal transmission link layer 24 is provided in the lower ceramic substrate 20. The second RF signal transmission link layer 24 is used to transmit signals. A second through-hole group penetrating the second RF signal transmission link layer 24 is provided on the second RF signal transmission link layer 24, and a second through-hole metal 241 is provided in the second through-hole group. The upper ceramic substrate 10 and the lower ceramic substrate 20 are electrically interconnected through the first through-hole metal 121 and the second through-hole metal 241. When in use, the signal of the first frequency conversion chipset 11 is transmitted to the second frequency conversion chipset 22 through the first RF signal transmission link layer 12, and then transmitted to the outside through the second RF signal transmission link layer 24, thereby realizing broadband secondary frequency conversion.

[0027] The lower ceramic substrate 20 is provided with a second through hole 21 penetrating the lower ceramic substrate 20, a heat sink is provided in the second through hole 21, the heat sink seals the bottom of the second through hole 21, a second frequency conversion chipset 22 is provided on the top of the heat sink, and the heat sink is used to dissipate heat for the high-power frequency conversion component. The first frequency conversion chipset 11 is a low-power device and generates low heat. The second frequency conversion chipset 22 is a high-power device and generates high heat. By arranging the second frequency conversion chipset 22 on the heat sink, timely heat dissipation is achieved, ensuring the stable operation of the high-power frequency conversion component and improving stability.

[0028] It should be noted that the top and bottom mentioned in this embodiment are relative to the ground, the side away from the ground is the top, and the side close to the ground is the bottom.

[0029] In this embodiment, an upper ceramic substrate is superimposed on a lower ceramic substrate, the cover plate and the lower ceramic substrate are sealed, a first frequency conversion chipset and a first radio frequency signal transmission link layer are arranged on the upper ceramic substrate, and a second frequency conversion chipset and a second radio frequency signal transmission link layer are arranged on the lower ceramic substrate. Through multi-layer high-density wiring, blind buried hole process and three-dimensional stacking stereo integration technology, high-power frequency conversion components are integrated and high-density miniaturized stereo integration is achieved to reduce the volume; at the same time, a heat sink is arranged in the second through hole on the lower ceramic substrate, and the heat sink can dissipate heat in time to ensure the stable operation of the high-power frequency conversion components and improve the stability.

[0030] In one embodiment, if Figure 2 As shown, the heat sink includes a metal boss 23 , the top of the metal boss 23 seals the second through hole 21 , and the bottom of the metal boss 23 at least partially protrudes from the bottom of the lower ceramic substrate 20 .

[0031] The metal boss 23 is arranged in the middle of the lower ceramic substrate 20. The top of the metal boss 23 seals the second through hole 21, so that the high-power frequency conversion component is sealed and the airtightness is improved. The bottom of the metal boss 23 at least partially protrudes from the bottom of the lower ceramic substrate 20, so that the metal boss 23 can quickly exchange heat with the outside world. Without increasing the volume, the high-power frequency conversion component can quickly dissipate heat, ensure the stable operation of the high-power frequency conversion component, and improve stability.

[0032] In one embodiment, if Figure 2 As shown, at least one guide groove 231 is disposed on the back of the metal boss 23 , and opposite ends of the guide groove 231 penetrate opposite side edges of the metal boss 23 .

[0033] The back of the metal boss 23 is in the shape of a rectangle, and at least one guide groove 231 is provided on the back of the metal boss 23. The guide groove 231 is used to discharge gas or soldering flux during reflow soldering of the high-power frequency conversion component to avoid soldering voids at the bottom of the high-power frequency conversion component. Preferably, there are two guide grooves 231, and the opposite ends of the two guide grooves 231 respectively penetrate the opposite sides of the back of the metal boss 23 in the length and width directions, further facilitating the rapid discharge of gas or soldering flux to avoid soldering voids at the bottom of the high-power frequency conversion component.

[0034] In one embodiment, if Figure 1 and Figure 2 As shown, a first solder ball array ball 40 is disposed between the upper ceramic substrate 10 and the lower ceramic substrate 20, and the first through-hole metal 121 and the second through-hole metal 241 are electrically connected through the first solder ball array ball 40; A second solder ball array ball 50 is disposed at the bottom of the lower ceramic substrate 20 . The second solder ball array ball 50 is electrically connected to the second through-hole metal 241 . The horizontal plane where the bottom of the heat sink is located is flush with the horizontal plane where the bottom of the second solder ball array ball 50 is located.

[0035] A plurality of first ball grid array (BGA) balls 40 are provided between the upper ceramic substrate 10 and the lower ceramic substrate 20. The first ball grid array balls 40 are used to provide RF signal input and output. A plurality of second ball grid array balls 50 are provided at the bottom of the lower ceramic substrate 20. The second ball grid array balls 50 are used for structural support and electrical interconnection. The first ball grid array balls 40 and the second ball grid array balls 50 are vertically interconnected, so that the high-power frequency conversion components can be more three-dimensionally integrated and the volume can be further reduced.

[0036] The metal boss 23 is arranged in the middle of multiple second solder ball array balls 50, and the horizontal plane where the bottom of the metal boss 23 is located is flush with the horizontal plane where the bottom of the second solder ball array ball 50 is located. Without increasing the volume, the high-power frequency conversion component can quickly dissipate heat, ensure the stable operation of the high-power frequency conversion component, and improve stability.

[0037] In one embodiment, if Figure 1 As shown, the first RF signal transmission link layer 12 includes a first RF layer 122, a first ground layer 123, a first digital layer 124, a second ground layer 125, a second RF layer 126 and a third ground layer 127, which are arranged in sequence from top to bottom. The second RF signal transmission link layer 24 includes a third RF layer 242, a fourth ground layer 243, a second digital layer 244, a fifth ground layer 245, a fourth RF layer 246, a sixth ground layer 247 and a fifth RF layer 248, which are arranged in sequence from top to bottom. A first solder ball array ball 40 is disposed between the third ground layer 127 and the third RF layer 242 , and a second solder ball array ball 50 is disposed at the bottom of the fifth RF layer 248 . The output end of the first frequency conversion chipset 11 is communicatively connected to the first solder ball array ball 40 through the first RF layer 122 and the third ground layer 127, the input end of the second frequency conversion chipset 22 is communicatively connected to the first solder ball array ball 40, and the output end of the second frequency conversion chipset 22 is communicatively connected to the second solder ball array ball 50 through the fourth RF layer 246 and the fifth RF layer 248.

[0038] The upper ceramic substrate 10 is provided with 6 circuit layers from top to bottom, including a first RF layer 122, a first ground layer 123, a first digital layer 124, a second ground layer 125, a second RF layer 126 and a third ground layer 127. The first RF layer 122 provides an assembly area and RF wiring for the first frequency conversion chipset 11; the first digital layer 124 is for power supply and control wiring. The substrate thickness of the first RF layer 122 is 0.0155 mm, and the substrate thickness of the first ground layer 123, the first digital layer 124, the second ground layer 125, the second RF layer 126 and the third ground layer 127 is 0.01 mm, thereby reducing the overall thickness of the upper ceramic substrate 10.

[0039] The lower ceramic substrate 20 is provided with 7 circuit layers from top to bottom, including a third RF layer 242, a fourth ground layer 243, a second digital layer 244, a fifth ground layer 245, a fourth RF layer 246, a sixth ground layer 247 and a fifth RF layer 248. The third RF layer 242 is electrically interconnected with the first solder ball array ball 40; the fourth ground layer 243 and the second digital layer 244 are used to provide power supply and control wiring; the fifth ground layer 245, the fourth RF layer 246, the sixth ground layer 247 and the fifth RF layer 248 are used to provide structural support and RF signal switching. Among them, the substrate thickness of the third RF layer 242, the fourth ground layer 243, the second digital layer 244, the fifth ground layer 245, the sixth ground layer 247 and the fifth RF layer 248 is 0.01mm, and the substrate thickness of the fourth RF layer 246 is 0.0155mm, thereby reducing the overall thickness of the lower ceramic substrate 20.

[0040] like Figure 1 As shown in the figure, the transmission line of the three-dimensional stacked high-power frequency conversion SiP module of the present invention is "P1-P2-P3-P4-P5-P6", and the RF transmission structures passed through are "bonding pad--coplanar waveguide--quasi-coaxial via--quasi-coaxial BGA ball--coplanar waveguide--bonding pad--coplanar waveguide--quasi-coaxial via--coplanar waveguide--bonding pad--coplanar waveguide--quasi-coaxial via--quasi-coaxial BGA ball" from top to bottom. Among them, the RF transmission path of the three-dimensional stacked high-power frequency conversion component of the present invention passes through 13 different types of transmission structures and 12 transmission transformations. Each transformation must perform broadband impedance matching to achieve low insertion loss transmission of broadband signals.

[0041] In one embodiment, if Figure 3As shown, the first frequency conversion chipset 11 includes a first intermediate frequency bandpass filter 111, a low noise amplifier 112, a digitally controlled attenuator 113, an intermediate frequency low-pass filter 114, a first mixer 115, a second intermediate frequency bandpass filter 116, a first power amplifier 117, a second mixer 118, and a first switch filter group 119, which are communicatively connected in sequence; the second frequency conversion chipset 22 includes a second power amplifier 221, a second switch filter group 222, a driving amplifier 223 and a power amplifier 224, which are communicatively connected in sequence; and the output end of the first switch filter group 119 is communicatively connected to the input end of the second power amplifier 221.

[0042] The first intermediate frequency band-pass filter (BPF) 111, the low noise amplifier (Low Noise Amplifier c, LNA) 112, the digitally controlled attenuator 113, the intermediate frequency low-pass filter (LPF) 114 and the first mixer 115 realize primary frequency conversion, the second intermediate frequency band-pass filter 116, the first power amplifier 117, the second mixer 118, the first switch filter group 119, the second power amplifier 221, the second switch filter group 222, the driver amplifier 223 and the power amplifier 224 realize secondary frequency conversion, and broadband low spurious frequency conversion is realized through the segmented multi-stage cascade filtering of the first switch filter group 119 and the second switch filter group 222. In addition, the component materials of the first frequency conversion chipset 11 and the second frequency conversion chipset 22 include gallium arsenide chips (such as the low noise amplifier 112), gallium nitride chips (such as the power amplifier 224), ceramic devices (such as the first intermediate frequency bandpass filter 111), etc., and the components made of different materials and different processes are collaboratively designed through high-temperature co-fired ceramic three-dimensional stacking integration technology to achieve modular heterogeneous and heterogeneous integration of broadband and high-power frequency conversion components.

[0043] The first mixer 115 and the second mixer 118 use broadband mixers to realize multi-band shared mixers, which greatly reduces the size of high-power frequency conversion components, further reduces the volume, and improves integration.

[0044] Among them, the working principles of the first intermediate frequency bandpass filter 111, the low noise amplifier 112, the digitally controlled attenuator 113, the intermediate frequency low-pass filter 114, the first mixer 115, the second intermediate frequency bandpass filter 116, the first power amplifier 117, the second mixer 118, the first switch filter group 119, the second power amplifier 221, the second switch filter group 222, the driving amplifier 223 and the power amplifier 224 can adopt the existing technology, which does not belong to the improvement points of the present application and will not be elaborated here.

[0045] In one embodiment, if Figure 3As shown, the first switch filter group 119 and the second switch filter group 222 both include a switch S1 and a plurality of frequency filters F1 with different frequencies, and the switch S1 controls the frequency filters F1 to be connected according to the frequency.

[0046] The switch S1 is a one-pole multi-throw switch, and the frequency filter F1 is a plurality of filters of different frequencies. The switch S1 is connected with the corresponding frequency filter F1 according to different frequency selections to realize segmented multi-stage cascade filtering, which can suppress the spurious of broadband frequency conversion.

[0047] In one embodiment, if Figure 1 As shown, the second power amplifier 221 and the second switch filter group 222 are arranged in the groove, and the driving amplifier 223 and the power amplifier 224 are arranged on the top of the heat sink.

[0048] The driving amplifier 223 and the power amplifier 224 are high-power devices that generate the most heat. By arranging the driving amplifier 223 and the power amplifier 224 on the top of the metal boss 23, rapid heat dissipation is further achieved, ensuring stable operation of the high-power frequency conversion component and improving stability.

[0049] In one embodiment, if Figure 1 As shown, a plurality of spacer bars 13 are disposed on the top of the upper ceramic substrate 10 , and the plurality of spacer bars 13 form a plurality of chambers between the cover plate 30 and the upper ceramic substrate 10 .

[0050] A plurality of spacers 13 are disposed on the top of the upper ceramic substrate 10 . The spacers 13 form a plurality of chambers between the upper ceramic substrate 10 and the cover plate 30 . The spacers 13 electromagnetically shield circuit elements with different functions to prevent interference between circuit elements in adjacent chambers.

[0051] In order to detect the loss, impedance matching, noise coefficient influence, etc. of the three-dimensional stacked high-power frequency conversion SiP module of the present invention, a transmission model is constructed for the three-dimensional stacked high-power frequency conversion SiP module of the present invention, and a simulation port 1 is set at the output end of the switch filter group at P1, and a simulation port 2 is set at P6. The transmission model is simulated, and the simulation results are shown in FIG. Figure 4 As shown, from Figure 4 From the simulation results, we can see that within the operating frequency range (0.8~18GHz), the return loss of the transmission model is less than -21dB and the insertion loss is less than 0.45dB. It can be seen that its broadband impedance matching is better, the insertion loss is lower, and the impact on the system performance is small.

[0052] The technical solution of the present invention also provides a radio frequency channel system, including the three-dimensional stacked high-power frequency conversion SiP module as described above.

[0053] The above embodiments are only used to illustrate the technical solutions of the embodiments of the present invention, rather than to limit them. Although the embodiments of the present invention are described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some of the technical features therein by equivalents. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A three-dimensional stacked high-power frequency conversion SiP module, characterized in that: The invention comprises an upper ceramic substrate and a lower ceramic substrate which are stacked in sequence, wherein the upper ceramic substrate is surrounded by a cover plate, the cover plate is covered on the top of the lower ceramic substrate, and the cover plate and the lower ceramic substrate are sealed. A first frequency conversion chipset is disposed on the top of the upper ceramic substrate, a first radio frequency signal transmission link layer electrically connected to the first frequency conversion chipset is disposed inside the upper ceramic substrate, a first through hole group penetrating the first radio frequency signal transmission link layer is disposed on the first radio frequency signal transmission link layer, and a first through hole metal is disposed inside the first through hole group; A groove with an upward opening is provided on the top of the lower ceramic substrate, a second through hole penetrating the lower ceramic substrate is provided on the lower ceramic substrate, a heat sink is provided in the second through hole, the heat sink seals the bottom of the second through hole, a second frequency conversion chipset is provided in the groove and on the top of the heat sink, a second RF signal transmission link layer electrically connected to the second frequency conversion chipset is provided inside the lower ceramic substrate, a third through hole group penetrating the second RF signal transmission link layer is provided on the second RF signal transmission link layer, a second through hole metal is provided in the third through hole group, and the first RF signal transmission link layer and the second RF signal transmission link layer are electrically connected through the first through hole metal and the second through hole metal.

2. The three-dimensional stacked high-power frequency conversion SiP module according to claim 1, characterized in that: The heat sink comprises a metal boss, a top of the metal boss seals the second through hole, and a bottom of the metal boss at least partially protrudes from the bottom of the lower ceramic substrate.

3. The three-dimensional stacked high-power frequency conversion SiP module according to claim 2, characterized in that: At least one guide groove is disposed on the back side of the metal boss, and opposite ends of the guide groove penetrate opposite two sides of the metal boss.

4. The three-dimensional stacked high-power frequency conversion SiP module according to any one of claims 1 to 3, characterized in that: A first solder ball array ball is disposed between the upper ceramic substrate and the lower ceramic substrate, and the first through-hole metal and the second through-hole metal are electrically connected through the first solder ball array ball; A second solder ball array ball is disposed at the bottom of the lower ceramic substrate, the second solder ball array ball is electrically connected to the second through-hole metal, and the horizontal plane where the bottom of the heat sink is located is flush with the horizontal plane where the bottom of the second solder ball array ball is located.

5. The three-dimensional stacked high-power frequency conversion SiP module according to claim 4, characterized in that: The first radio frequency signal transmission link layer includes a first radio frequency layer, a first ground layer, a first digital layer, a second ground layer, a second radio frequency layer and a third ground layer, which are arranged in sequence from top to bottom; the second radio frequency signal transmission link layer includes a third radio frequency layer, a fourth ground layer, a second digital layer, a fifth ground layer, a fourth radio frequency layer, a sixth ground layer and a fifth radio frequency layer, which are arranged in sequence from top to bottom; The first solder ball array ball is disposed between the third ground layer and the third radio frequency layer, and the second solder ball array ball is disposed at the bottom of the fifth radio frequency layer. The output end of the first frequency conversion chipset is connected to the first solder ball array ball communication through the first RF layer and the third ground layer, the input end of the second frequency conversion chipset is connected to the first solder ball array ball communication, and the output end of the second frequency conversion chipset is connected to the second solder ball array ball communication through the fourth RF layer and the fifth RF layer.

6. The three-dimensional stacked high-power frequency conversion SiP module according to claim 1, characterized in that: The first frequency conversion chipset includes a first intermediate frequency bandpass filter, a low noise amplifier, a digitally controlled attenuator, an intermediate frequency low-pass filter, a first mixer, a second intermediate frequency bandpass filter, a first power amplifier, a second mixer, and a first switch filter group, which are communicatively connected in sequence; the second frequency conversion chipset includes a second power amplifier, a second switch filter group, a driving amplifier, and a power amplifier, which are communicatively connected in sequence; and the output end of the first switch filter group is communicatively connected to the input end of the second power amplifier.

7. The three-dimensional stacked high-power frequency conversion SiP module according to claim 6, characterized in that: The first switch filter group and the second switch filter group each include a switch and a plurality of frequency filters with different frequencies, and the switch controls the frequency filters to be connected according to the frequency.

8. The three-dimensional stacked high-power frequency conversion SiP module according to claim 6, characterized in that: The second power amplifier and the second switch filter group are arranged in the groove, and the driving amplifier and the power amplifier are arranged on the top of the heat sink.

9. The three-dimensional stacked high-power frequency conversion SiP module according to claim 8, characterized in that: A plurality of spacers are disposed on the top of the upper ceramic substrate, and the plurality of spacers form a plurality of chambers between the cover plate and the upper ceramic substrate.

10. A radio frequency channel system, characterized in that: It comprises a three-dimensional stacked high-power frequency conversion SiP module as described in any one of claims 1 to 9.

Images