Epitaxial layer transfer method and manufacturing method of light-emitting chip

Abstract

The invention relates to an epitaxial layer transfer method and a manufacturing method of a light-emitting chip, and the epitaxial layer transfer method of the light-emitting chip comprises the steps: forming a semi-solid first etching type glue layer on a bearing substrate, and forming a semi-solid second etching type glue layer on an epitaxial layer borne by a substrate; the thickness of at least one of the first etching type adhesive layer and the second etching type adhesive layer is reduced through etching; the first etching type adhesive layer and the second etching type adhesive layer which are subjected to the thinning treatment are subjected to alignment press fit; and removing the substrate. The etching type adhesive layer can be etched to any required thickness by controlling the etching rate and the etching time, so that the etching type adhesive layer which is thin enough can be manufactured. Bonding is carried out after the etching type adhesive layer is thinned, the overall thickness of a bonding layer formed after the first etching type adhesive layer and the second etching type adhesive layer are pressed can be reduced, laser stripping in the follow-up manufacturing process is facilitated, residues of the adhesive layers on the light-emitting face of the light-emitting chip can be reduced, and the light-emitting effect of the light-emitting chip is optimized.

Description

Technical Field

[0001] The present application relates to the technical field of LED display, and in particular to an epitaxial layer transfer method and a manufacturing method of a light-emitting chip. Background Art

[0002] Micro-LED (Micro Light Emitting Diode) has been sought after by various manufacturers due to its advantages of high brightness, wide color gamut coverage and high contrast, and is called the next-generation display device.

[0003] At present, in the process of manufacturing some light-emitting chips, the epitaxial layer needs to be transferred. In the process of transfer, the bonding glue layer is usually spin-coated on the epitaxial layer. However, due to the limitations of the glue layer viscosity and the spin-coating process, the thinnest thickness of the glue layer that can be made by spin-coating is still relatively thick. The thick glue layer leads to more colloid residue on the light-emitting surface of the light-emitting chip in the subsequent manufacturing process, which affects the light-emitting effect of the light-emitting chip.

[0004] Therefore, how to reduce the thickness of the bonding adhesive layer is an urgent problem to be solved. Summary of the invention

[0005] In view of the deficiencies of the above-mentioned related technologies, the purpose of the present application is to provide an epitaxial layer transfer method and a manufacturing method for a light-emitting chip, aiming to solve the technical problem that the bonding layer is thick, which affects the light output effect of the light-emitting chip.

[0006] A method for transferring an epitaxial layer of a light-emitting chip, comprising:

[0007] Forming a semi-solid first etching type glue layer on the carrier substrate, and forming a semi-solid second etching type glue layer on the epitaxial layer carried by the substrate;

[0008] thinning the thickness of at least one of the first etching type glue layer and the second etching type glue layer by etching;

[0009] Aligning and pressing the first etching type adhesive layer and the second etching type adhesive layer after the thinning process;

[0010] The substrate is removed.

[0011] In the above-mentioned epitaxial layer transfer method of the light-emitting chip, after forming the first etching type adhesive layer and the second etching type adhesive layer, at least one of the first etching type adhesive layer and the second etching type adhesive layer is also etched and thinned. The etching type adhesive layer can be etched to any required thickness by controlling the etching rate and etching time, thereby a sufficiently thin etching type adhesive layer can be produced. After thinning the etching type adhesive layer and then bonding, the overall thickness of the bonding layer formed after the first etching type adhesive layer and the second etching type adhesive layer are pressed together can be reduced. The reduced thickness of the bonding layer is more conducive to laser stripping in the subsequent production process, and the residue of the adhesive layer on the light-emitting surface of the light-emitting chip can be reduced, thereby optimizing the light-emitting effect of the light-emitting chip. Moreover, after etching the etching type adhesive layer, the surface roughness of the etching type adhesive layer can be increased, thereby increasing the contact area between the first etching type adhesive layer and the second etching type adhesive layer, improving the bonding strength between the first etching type adhesive layer and the second etching type adhesive layer, and improving the bonding yield.

[0012] Optionally, after thinning the thickness of at least one of the first etching type adhesive layer and the second etching type adhesive layer by etching, before aligning and pressing the first etching type adhesive layer after thinning with the second etching type adhesive layer, the method further includes: performing a surface roughening treatment on at least one of the first etching type adhesive layer and the second etching type adhesive layer. Performing a surface roughening treatment on the etching type adhesive layer can further improve the roughness of the etching type adhesive layer, thereby further improving the bonding strength between the first etching type adhesive layer and the second etching type adhesive layer, and improving the bonding yield.

[0013] Based on the same inventive concept, the present application also provides a method for manufacturing a light-emitting chip, comprising:

[0014] The epitaxial layer transfer of the light-emitting chip is completed by using the epitaxial layer transfer method of the light-emitting chip as described above;

[0015] Electrodes are fabricated on the epitaxial layer.

[0016] In the above-mentioned method for manufacturing the light-emitting chip, the epitaxial layer transfer of the light-emitting chip is completed by using the above-mentioned method for transferring the epitaxial layer of the light-emitting chip, which can reduce the overall thickness of the bonding layer formed after the first etching type adhesive layer and the second etching type adhesive layer are pressed together. The reduced thickness of the bonding layer is more conducive to laser stripping in the subsequent manufacturing process, and can reduce the residue of the adhesive layer on the light-emitting surface of the light-emitting chip, so that the light-emitting effect of the manufactured light-emitting chip is better. At the same time, after etching the etching type adhesive layer, the surface roughness of the etching type adhesive layer can be increased, thereby increasing the contact area between the first etching type adhesive layer and the second etching type adhesive layer, improving the bonding strength between the first etching type adhesive layer and the second etching type adhesive layer, and improving the bonding yield. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1A flow chart of a method for transferring an epitaxial layer of a light-emitting chip provided in an embodiment of the present application;

[0018] Figure 2 A schematic diagram of a structure for forming a second etching type glue layer on an epitaxial layer provided in an embodiment of the present application;

[0019] Figure 3 A schematic diagram of a structure for forming a first etching type adhesive layer on a carrier substrate provided in an embodiment of the present application;

[0020] Figure 4 A schematic diagram of the structure of the second etching type adhesive layer after being etched and thinned provided in an embodiment of the present application;

[0021] Figure 5 A schematic diagram of the structure of the first etching type adhesive layer after being etched and thinned provided in an embodiment of the present application;

[0022] Figure 6 A schematic diagram of the structure after the first etching type adhesive layer and the second etching type adhesive layer provided in an embodiment of the present application are aligned and pressed together;

[0023] Figure 7 Another flow chart of a method for transferring an epitaxial layer of a light-emitting chip provided in another optional embodiment of the present application;

[0024] Figure 8 A schematic diagram of the structure of the second etching type adhesive layer after the surface is roughened according to another optional embodiment of the present application;

[0025] Fig. 9 A schematic diagram of the structure of another optional embodiment of the present application after the surface of the first etching type adhesive layer is roughened;

[0026] Description of reference numerals:

[0027] 1-substrate; 2-epitaxial layer; 3-second etching type adhesive layer; 4-carrying substrate; 5-first etching type adhesive layer. DETAILED DESCRIPTION

[0028] In order to facilitate the understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. The preferred embodiments of the present application are given in the drawings. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present application more thoroughly and comprehensively understood.

[0029] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application belongs. The terms used herein in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application.

[0030] In the process of manufacturing some light-emitting chips, it is necessary to transfer the epitaxial layer. For example, in the process of manufacturing red light-emitting chips, the epitaxial layer is usually grown on a gallium arsenide substrate. After the epitaxial layer is grown, the light-absorbing gallium arsenide substrate needs to be removed and the epitaxial layer is transferred to other light-transmitting substrates for subsequent manufacturing. In the process of transferring the epitaxial layer, a bonding adhesive layer is usually spin-coated on the epitaxial layer. However, due to the limitations of the adhesive layer viscosity and the spin coating process, the thinnest thickness of the adhesive layer that can be produced by spin coating is still relatively thick. The thick adhesive layer results in more colloid residue on the light-emitting surface of the light-emitting chip during the subsequent manufacturing process, which affects the light-emitting effect of the light-emitting chip.

[0031] Based on this, the present application hopes to provide a solution that can solve the above-mentioned technical problems, the details of which will be described in the subsequent embodiments.

[0032] This embodiment provides a method for transferring an epitaxial layer of a light-emitting chip. Figure 1-Figure 6 As shown, the following steps are included:

[0033] S101: forming a semi-solid first etching type adhesive layer on a carrier substrate, and forming a semi-solid second etching type adhesive layer on an epitaxial layer carried by the substrate.

[0034] The structure after forming the first etching type adhesive layer 5 on the carrier substrate 4 is as follows Figure 3 As shown, the structure after forming the second etching type glue layer 3 on the epitaxial layer 2 is as shown in FIG. Figure 2 As shown. The first etching type glue layer 5 and the second etching type glue layer 3 in this embodiment are made of transparent glue materials that can be etched and removed, such as organic materials. The organic materials include benzocyclobutene (BCB), but are not limited to this. The material of the carrier substrate 4 in this embodiment may include glass, sapphire, plastic or other applicable materials. If the carrier substrate 4 needs to be laser-stripped in the subsequent production process, the carrier substrate 4 can be made of a light-transmitting or transparent material. The substrate 1 in this embodiment can be a substrate used to carry the epitaxial layer 2 during the transfer process, and its material can be glass, sapphire, plastic, ceramic or other applicable materials; or it can also be the growth substrate 1 of the epitaxial layer 2. For example, when making a red light emitting chip, the growth substrate 1 can be a gallium arsenide substrate 1. The epitaxial layer 2 in this embodiment includes an N semiconductor layer, a P semiconductor layer, and an active layer located between the N semiconductor layer and the P semiconductor layer. The active layer in this embodiment may include a quantum well layer, and may also include other structures.

[0035] In some embodiments, an etching type adhesive layer can be spin-coated on the carrier substrate 4 and the epitaxial layer 2 respectively by a spin coating device to form a first etching type adhesive layer 5 and a second etching type adhesive layer 3 respectively, and the spin coating speed of the spin coating device is greater than or equal to 4500rpm, and the spin coating time is greater than or equal to 30s. Generally, the greater the spin coating speed, the thinner the thickness of the spin-coated adhesive layer, but when the spin coating speed is greater than or equal to 4500rpm, due to the influence of the viscosity of the adhesive layer, the thickness of the adhesive layer will tend to be stable and will no longer be thinned with the increase of the spin coating speed. In this embodiment, the spin coating speed is greater than or equal to 4500rpm, and the etching type adhesive layer can be made into the thinnest thickness that can be achieved by spin coating, thereby reducing the thickness of the adhesive layer to be removed during subsequent etching and thinning, shortening the etching time and improving the processing efficiency. However, due to the limitations of the spin coating quality and equipment, the spin coating speed should not be too large. In this embodiment, the spin coating quality can be improved when the spin coating time is greater than or equal to 30s. In some application scenarios, depending on different spin coating equipment and requirements, a spin coating speed of less than 4500 rpm and a spin coating time of less than 30 s may also be selected.

[0036] In this embodiment, after the spin coating is completed, the first curing temperature can be applied to the etching type adhesive layer on the carrier substrate 4 and the etching type adhesive layer on the epitaxial layer 2 to make them semi-solid, forming a semi-solid first etching type adhesive layer 5 and a second etching type adhesive layer 3. It can be understood that the semi-solid state is between the liquid state and the solid state, and the hardness of the semi-solid state is less than the hardness of the solid state. When the etching type adhesive layer includes benzocyclobutene, the first curing temperature in this embodiment can be 140°C-160°C, but is not limited thereto, and can also be other temperatures that make the etching type adhesive layer semi-cured, which can be selected according to the material.

[0037] S102: thinning the thickness of at least one of the first etching type glue layer and the second etching type glue layer by etching.

[0038] In some embodiments, this step may be performed by etching to thin the thickness of the first etching type adhesive layer 5 and the second etching type adhesive layer 3, respectively. After the first etching type adhesive layer 5 and the second etching type adhesive layer 3 are thinned, the structure of the first etching type adhesive layer 5 after thinning is as follows: Figure 5 As shown, the structure of the second etching type glue layer 3 after thinning is as follows Figure 4As shown. After the respective thinning, the thickness of the bonding layer formed by the subsequent lamination can be thinner, which is more conducive to reducing the residue of the adhesive layer on the light-emitting surface of the light-emitting chip. In order to reduce the colloid residue and enable the light-emitting chip to achieve the best light-emitting effect, the first etching type adhesive layer 5 and the second etching type adhesive layer 3 can be etched separately to reduce their thickness to 1 micron or less. In some other embodiments, this step can also be to thin the thickness of the first etching type adhesive layer 5 by etching, and the second etching type adhesive layer 3 is not subjected to etching and thinning processing. Only thinning the first etching type adhesive layer 5 can also reduce the thickness of the bonding layer formed by the subsequent lamination. In some other embodiments, this step can also be to thin the thickness of the second etching type adhesive layer 3 by etching, and the first etching type adhesive layer 5 is not subjected to etching and thinning processing. Similarly, only thinning the second etching type adhesive layer 3 can also reduce the thickness of the bonding layer formed by the subsequent lamination.

[0039] In some implementations, the etching in this embodiment may be dry etching, for example, but not limited to ICP (Inductive Coupled Plasma) etching. By controlling the etching rate and etching time of the etching equipment during etching, the thickness of the first etching type glue layer 5 and the second etching type glue layer 3 can be controlled. 2 and CF 4 The etching gas is used to etch at least one of the first etching type glue layer 5 and the second etching type glue layer 3. 2 and CF 4 The gas flow ratio can be 1:1, O 2 and CF 4 The etching gas has a good effect on thinning the adhesive material. However, it is not limited to this. Other etching gases suitable for thinning the adhesive layer can also be used in some application scenarios.

[0040] S103: Align and press the first etching type adhesive layer and the second etching type adhesive layer after the thinning process.

[0041] The structure after the first etching type adhesive layer 5 and the second etching type adhesive layer 3 are aligned and pressed is as follows: Figure 6As shown. In this embodiment, pressure is applied to the carrier substrate 4 and the substrate 1, so that the side of the first etching type adhesive layer 5 away from the carrier substrate 4 is bonded with the side of the second etching type adhesive layer 3 away from the substrate 1, forming a bonding layer composed of the first etching type adhesive layer 5 and the second etching type adhesive layer 3. The bonding layer can be cured during the lamination process, or it can be cured by placing or heating after lamination. Specifically, it can be selected according to the material type of the first etching type adhesive layer 5 and the second etching type adhesive layer 3. For example, when the first etching type adhesive layer 5 and the second etching type adhesive layer 3 respectively include benzocyclobutene adhesive materials, the above-mentioned lamination can be hot pressing. At the second curing temperature, the first etching type adhesive layer 5 and the second etching type adhesive layer 3 after the thinning process are aligned and pressed, so that the first etching type adhesive layer 5 and the second etching type adhesive layer 3 are bonded and then cured. In this embodiment, the second curing temperature is greater than the first curing temperature. For example, the second curing temperature can be but not limited to 200°C to 250°C. After lamination, the thickness of the solidified bonding layer formed by the first etching type adhesive layer 5 and the second etching type adhesive layer 3 together may be less than the sum of the thicknesses of the semi-solid first etching type adhesive layer 5 and the second etching type adhesive layer 3 .

[0042] S104: removing the substrate.

[0043] The present embodiment does not impose any particular limitation on the specific method for removing the substrate 1 ; the substrate 1 may be removed.

[0044] In the above-mentioned epitaxial layer transfer method of the light-emitting chip, after forming the first etching type adhesive layer 5 and the second etching type adhesive layer 3, at least one of the first etching type adhesive layer 5 and the second etching type adhesive layer 3 is also etched and thinned. The etching type adhesive layer can be etched to any required thickness by controlling the etching rate and etching time, thereby a sufficiently thin etching type adhesive layer can be produced. After thinning the etching type adhesive layer and then bonding, the overall thickness of the bonding layer formed after the first etching type adhesive layer 5 and the second etching type adhesive layer 3 are pressed together can be reduced. The reduced thickness of the bonding layer is more conducive to laser stripping in the subsequent manufacturing process, and the residue of the adhesive layer on the light-emitting surface of the light-emitting chip can be reduced, thereby optimizing the light-emitting effect of the light-emitting chip. Moreover, after etching the etching type adhesive layer, the surface roughness of the etching type adhesive layer can be increased, thereby increasing the contact area between the first etching type adhesive layer 5 and the second etching type adhesive layer 3, improving the bonding strength between the first etching type adhesive layer 5 and the second etching type adhesive layer 3, and improving the bonding yield.

[0045] Another optional embodiment of the present application:

[0046] This embodiment provides a method for transferring an epitaxial layer of a light-emitting chip. Figure 7 As shown, the following steps are included:

[0047] S201: forming a semi-solid first etching type glue layer on the carrier substrate by spin coating, and forming a semi-solid second etching type glue layer on the epitaxial layer carried by the growth substrate by spin coating.

[0048] S202: Reducing the thickness of the first etching type adhesive layer and the second etching type adhesive layer by etching.

[0049] The first etching type adhesive layer 5 and the second etching type adhesive layer 3 are thinned respectively, so that the thickness of the bonding layer formed by subsequent lamination can be thinner, which is more conducive to reducing the residue of the adhesive layer on the light emitting surface of the light emitting chip.

[0050] S203: performing surface roughening treatment on at least one of the first etching type adhesive layer and the second etching type adhesive layer.

[0051] In this embodiment, at least one of the surface of the first etching type adhesive layer 5 away from the carrier substrate 4 and the surface of the second etching type adhesive layer 3 away from the substrate 1 is subjected to surface roughening treatment. The roughness of the etching type adhesive layer can be further improved, thereby further improving the bonding strength between the first etching type adhesive layer 5 and the second etching type adhesive layer 3, and improving the bonding yield.

[0052] In some embodiments, this step may be performed by etching to roughen the surface of the first etching type adhesive layer 5 and the second etching type adhesive layer 3 respectively. The structure of the surface of the first etching type adhesive layer 5 after roughening is as follows: Fig. 9 As shown, the structure of the second etching type adhesive layer 3 after the surface roughening treatment is as follows Figure 8 As shown. After the first etching type adhesive layer 5 and the second etching type adhesive layer 3 are respectively roughened, because the adhesive material has a certain deformation ability before solidification, the contact area between the first etching type adhesive layer 5 and the second etching type adhesive layer 3 during pressing can be greatly increased, and the bonding strength between the first etching type adhesive layer 5 and the second etching type adhesive layer 3 can be improved. In other embodiments, this step can also be roughening the surface of the first etching type adhesive layer 5 only by etching, and the second etching type adhesive layer 3 is not roughened. Roughening only the first etching type adhesive layer 5 can also increase the contact area between the first etching type adhesive layer 5 and the second etching type adhesive layer 3. In some other embodiments, this step can also be roughening the surface of the second etching type adhesive layer 3 by etching, and the first etching type adhesive layer 5 is not roughened. Similarly, roughening only the second etching type adhesive layer 3 can also increase the contact area between the first etching type adhesive layer 5 and the second etching type adhesive layer 3, and improve the bonding strength between the first etching type adhesive layer 5 and the second etching type adhesive layer 3.

[0053] In this embodiment, in order to achieve a good roughening effect, Cl can be used. 2 and BCl 3The etching gas is used to etch the surface of at least one of the first etching type glue layer 5 and the second etching type glue layer 3. 2 and BCl 3 The gas flow ratio can be 1:4, Cl 2 and BCl 3 The etching gas has a good roughening effect on the adhesive material. However, it is not limited to this, and other etching gases suitable for surface roughening can also be used in some application scenarios.

[0054] In some embodiments, in order to increase the bonding yield, grooves can be processed on the surfaces of the first etched adhesive layer 5 and the second etched adhesive layer 3 to form a concave-convex surface. During alignment and pressing, the protrusions on the first etched adhesive layer 5 correspond to the grooves on the second etched adhesive layer 3, and the grooves on the first etched adhesive layer 5 correspond to the protrusions on the second etched adhesive layer 3 to form a concave-convex fit. In this way, the contact area between the first etched adhesive layer 5 and the second etched adhesive layer 3 can be further increased on the basis of the roughened surface, the bonding yield can be increased, and the lateral slip between the first etched adhesive layer 5 and the second etched adhesive layer 3 can be prevented, so that the firmness is better.

[0055] S204: Aligning and high-temperature pressing the first etching type adhesive layer and the second etching type adhesive layer after the thinning process.

[0056] S205: removing the growth substrate.

[0057] In the above-mentioned method for transferring the epitaxial layer 2 of the light-emitting chip, after forming the first etching type adhesive layer 5 and the second etching type adhesive layer 3, at least one of the first etching type adhesive layer 5 and the second etching type adhesive layer 3 is also etched and thinned. The etching type adhesive layer can be etched to any required thickness by controlling the etching rate and etching time, thereby a sufficiently thin etching type adhesive layer can be produced. After thinning the etching type adhesive layer and then bonding, the overall thickness of the bonding layer formed after the first etching type adhesive layer 5 and the second etching type adhesive layer 3 are pressed together can be reduced. The reduced thickness of the bonding layer is more conducive to laser stripping in the subsequent manufacturing process, and the residue of the adhesive layer on the light-emitting surface of the light-emitting chip can be reduced, thereby optimizing the light-emitting effect of the light-emitting chip. Moreover, after etching the etching type adhesive layer, the surface roughness of the etching type adhesive layer can be increased, thereby increasing the contact area between the first etching type adhesive layer 5 and the second etching type adhesive layer 3, improving the bonding strength between the first etching type adhesive layer 5 and the second etching type adhesive layer 3, and improving the bonding yield.

[0058] Another optional embodiment of the present application:

[0059] This embodiment provides a method for manufacturing a light-emitting chip, which first uses the above method for transferring the epitaxial layer of the light-emitting chip to complete the transfer of the epitaxial layer 2 of the light-emitting chip, and then manufactures electrodes on the epitaxial layer 2.

[0060] In this embodiment, the electrodes can be formed on the epitaxial layer 2 by evaporation or deposition, but not limited to. After the electrodes are formed, independent light-emitting chips can be formed by cutting. The light-emitting chips in this embodiment include but are not limited to at least one of Mini LED (Mini Light Emitting Diode, sub-millimeter light-emitting diode), Micro LED (Micro Light Emitting Diode, micrometer-level light-emitting diode), and nanoscale light-emitting diode. The light-emitting chip in this embodiment can be a red light-emitting chip, or a blue or green light-emitting chip. The electrodes in this embodiment include a positive electrode and a negative electrode, and the material and shape of the electrode are not limited. For example, in one example, the material of the electrode can include but is not limited to at least one of Cr, Ni, Al, Ti, Au, Pt, W, Pb, Rh, Sn, Cu, and Ag. .

[0061] In the above-mentioned method for manufacturing the light-emitting chip, the above-mentioned method for transferring the epitaxial layer of the light-emitting chip is used to complete the transfer of the epitaxial layer 2 of the light-emitting chip, which can reduce the overall thickness of the bonding layer formed after the first etching type adhesive layer 5 and the second etching type adhesive layer 3 are pressed together. The reduced thickness of the bonding layer is more conducive to laser stripping in the subsequent manufacturing process, and can reduce the residue of the adhesive layer on the light-emitting surface of the light-emitting chip, so that the light-emitting effect of the manufactured light-emitting chip is better. At the same time, after etching the etching type adhesive layer, the surface roughness of the etching type adhesive layer can be increased, thereby increasing the contact area between the first etching type adhesive layer 5 and the second etching type adhesive layer 3, improving the bonding strength between the first etching type adhesive layer 5 and the second etching type adhesive layer 3, and improving the bonding yield.

[0062] It should be understood that the application of the present application is not limited to the above examples. For ordinary technicians in this field, improvements or changes can be made based on the above description. All these improvements and changes should fall within the scope of protection of the claims attached to this application.

Claims

1. A method for transferring an epitaxial layer of a light-emitting chip, characterized in that: include: Forming a semi-solid first etching type glue layer on the carrier substrate, and forming a semi-solid second etching type glue layer on the epitaxial layer carried by the substrate; thinning the thickness of at least one of the first etching type glue layer and the second etching type glue layer by etching; Aligning and pressing the first etching type adhesive layer and the second etching type adhesive layer after the thinning process; The substrate is removed.

2. The epitaxial layer transfer method of the light emitting chip according to claim 1, characterized in that: The step of forming a semi-solid first etching type glue layer on the carrier substrate and forming a semi-solid second etching type glue layer on the epitaxial layer carried by the substrate comprises: Spin coating an etching type glue layer on the carrier substrate and the epitaxial layer respectively by a spin coating device; A first curing temperature is applied to the etching type adhesive layer on the carrier substrate and the etching type adhesive layer on the epitaxial layer to make them semi-solid; wherein the spin coating speed of the spin coating equipment is greater than or equal to 4500 rpm, and the spin coating time is greater than or equal to 30s.

3. The epitaxial layer transfer method of the light emitting chip according to claim 2, characterized in that: The first etching type adhesive layer and the second etching type adhesive layer respectively include benzocyclobutene adhesive material, and the alignment and pressing of the first etching type adhesive layer and the second etching type adhesive layer after thinning process includes: At a second curing temperature, the first etching type adhesive layer and the second etching type adhesive layer are aligned and pressed together so that the first etching type adhesive layer and the second etching type adhesive layer are bonded and then cured; wherein the second curing temperature is greater than the first curing temperature.

4. The epitaxial layer transfer method of the light emitting chip according to claim 1, characterized in that: The thickness of at least one of the first etching type glue layer and the second etching type glue layer thinned by etching is: The thickness of the first etching type glue layer and the second etching type glue layer are respectively reduced by dry etching.

5. The epitaxial layer transfer method of the light emitting chip according to claim 4, characterized in that: The step of thinning the thickness of the first etching type adhesive layer and the second etching type adhesive layer respectively by dry etching comprises: The first etching type glue layer and the second etching type glue layer are respectively etched to reduce their thickness to 1 micron or less.

6. The epitaxial layer transfer method of a light emitting chip according to any one of claims 1 to 5, characterized in that: The step of thinning the thickness of at least one of the first etching type glue layer and the second etching type glue layer by etching comprises: At least one of the first etching type glue layer and the second etching type glue layer is etched using etching gases of O2 and CF4.

7. The epitaxial layer transfer method of a light emitting chip according to any one of claims 1 to 5, characterized in that: After thinning the thickness of at least one of the first etching type adhesive layer and the second etching type adhesive layer by etching, and before aligning and pressing the first etching type adhesive layer and the second etching type adhesive layer after the thinning process, the method further includes: A surface roughening treatment is performed on at least one of the first etching type adhesive layer and the second etching type adhesive layer.

8. The epitaxial layer transfer method of the light emitting chip according to claim 7, characterized in that: The performing surface roughening treatment on at least one of the first etching type adhesive layer and the second etching type adhesive layer comprises: The first etching type adhesive layer and the second etching type adhesive layer are respectively subjected to surface roughening treatment.

9. The epitaxial layer transfer method of a light emitting chip according to claim 7, characterized in that: The performing surface roughening treatment on at least one of the first etching type adhesive layer and the second etching type adhesive layer comprises: The etching gas of Cl2 and BCl3 is used to etch the surface of at least one of the first etching type glue layer and the second etching type glue layer.

10. A method for manufacturing a light-emitting chip, characterized in that: include: The epitaxial layer transfer of the light-emitting chip is completed by using the epitaxial layer transfer method of the light-emitting chip as described in any one of claims 1 to 9; Electrodes are fabricated on the epitaxial layer.

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