Two-dimensional differential Hall chip, sensor element and magnetic field measurement method thereof

Abstract

The present invention discloses a two-dimensional differential Hall chip, a sensor element and a magnetic field measurement method thereof, wherein the two-dimensional differential Hall chip comprises: two groups of Hall pair chips arranged in a cross shape and a single magnetic concentrating layer located on the two groups of Hall pair chips; each group of Hall pair chips comprises two Hall chips distributed at intervals, one group of Hall pair chips in the two groups of Hall pair chips is symmetrically arranged along the x-axis in the horizontal direction, and the other group of Hall pair chips is symmetrically arranged along the y-axis in the vertical direction; the projection of the single magnetic concentrating layer on the Hall sensitive surface of the two groups of Hall pair chips covers the central area of ​​the two groups of Hall pair chips; the single magnetic concentrating layer covers at least part of the two groups of Hall pair chips, and the single magnetic concentrating layer is symmetrically arranged along the x-axis and the y-axis. The present invention realizes the high sensitivity, zero drift and large tolerance performance of the sensor element; realizes the miniaturization of the sensor element, and simplifies the magnetic field measurement method of the sensor element.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a two-dimensional differential Hall chip, a sensor element and a magnetic field measurement method thereof. Background Art

[0002] Hall technology has been widely used in various fields, but it is limited in many occasions because it is only sensitive to vertical magnetic fields. Hall, which can sense horizontal magnetic fields, can measure two-dimensional magnetic fields in a plane, and has broad application prospects in current detection, mobile phone navigation, attitude measurement and control, and angle and position detection.

[0003] The existing horizontal Hall technology uses a magnetic layer to deflect the horizontal signal, and combines it with differential technology to increase gain and reduce interference, but there are still problems with signal drift and assembly tolerance. The current method to remove drift is to use a circuit to cyclically load the working end and the signal end, that is, the spin technology. The implementation of this type of solution has disadvantages such as complex circuits, slow response, and difficulty in increasing the frequency bandwidth. The existing dual-magnet Hall pair design can realize the measurement of uniaxial magnetic fields, but the signal offset caused by the error in the installation position of the magnet is large. This structure requires a jumper to connect, and secondly, the signal drift is large; and the magnets on both sides protrude outward to improve sensitivity, making it difficult to reduce the chip size.

[0004] In the related technology, 2D Hall chips that can be sensitive to magnetic fields in two directions at the same time can realize the planar magnetic field detection function, and have broad application prospects in the fields of 2D switches, angle sensing, jitter measurement and control. The existing multi-dimensional Hall technology requires digital signal processing circuits to use more complex solutions to obtain the final output. It has shortcomings such as low space utilization, complex circuits, high costs, and long response times. More importantly, in many applications, only the horizontal magnetic field strength is required without solving the signals of each axis, and the z-axis has a large crosstalk due to errors in the horizontal direction. Conventional solutions require isolating the z-axis or increasing the number of Halls, which makes the design or process complicated and leads to higher costs. Summary of the invention

[0005] The technical problem solved by the present invention is to provide a two-dimensional differential Hall chip, a sensor element and a magnetic field measurement method thereof, which realizes the high sensitivity, zero drift and large tolerance performance of the sensor element; at the same time, since only a single magnetic concentrating layer is provided, and the single magnetic concentrating layer is a single-layer structure, the miniaturization of the sensor element is realized, and the sensor element of this structure can obtain the intensity information of the horizontal magnetic field signal through simple calculation, and the measurement method realizes the 2D detection of the planar magnetic field intensity with low drift, high isolation and high precision.

[0006] In order to solve the above technical problems, the technical solution of this application is as follows:

[0007] According to a first aspect of an embodiment of the present application, a two-dimensional differential Hall chip is provided, comprising:

[0008] Two groups of Hall pair chips arranged in a cross shape and a single magnetic concentrating layer located on the two groups of Hall pair chips; each group of Hall pair chips includes two Hall chips distributed at intervals, one group of Hall pair chips in the two groups of Hall pair chips is symmetrically arranged along the x-axis in the horizontal direction, and the other group of Hall pair chips is symmetrically arranged along the y-axis in the vertical direction;

[0009] The projection of the single magnetic concentrator layer on the Hall sensitive surface of the two groups of Hall pair chips is located in the central area of ​​the two groups of Hall pair chips; the single magnetic concentrator layer covers at least part of the two groups of Hall pair chips, and the single magnetic concentrator layer is symmetrically arranged along the x-axis and the y-axis.

[0010] In an exemplary embodiment, the two groups of Hall chip pairs include a first Hall chip pair group and a second Hall chip pair group; the first Hall chip pair group and the second Hall chip pair group are perpendicular to each other, the first Hall chip pair group includes a first Hall chip and a second Hall chip, the first Hall chip and the second Hall chip are arranged side by side in a non-contact manner, the central axis of the first Hall chip along the horizontal direction and the central axis of the second Hall chip along the horizontal direction are located on the same straight line, and the central axis of the first Hall chip along the vertical direction and the central axis of the second Hall chip along the vertical direction are parallel to each other;

[0011] The single magnetic concentrator layer covers at least a portion of the first Hall chip and at least a portion of the second Hall chip, and the coverage area of ​​the single magnetic concentrator layer on the first Hall chip is equal to the coverage area of ​​the single magnetic concentrator layer on the second Hall chip.

[0012] In an exemplary embodiment, the second Hall chip pair group includes a third Hall chip and a fourth Hall chip; the third Hall chip and the fourth Hall chip are arranged side by side in a non-contact manner, the central axis of the third Hall chip along the horizontal direction is parallel to the central axis of the fourth Hall chip along the horizontal direction, and the central axis of the third Hall chip along the vertical direction is located on the same straight line as the central axis of the fourth Hall chip along the vertical direction;

[0013] The single magnetic concentrator layer covers at least a portion of the third Hall chip and at least a portion of the fourth Hall chip, and the coverage area of ​​the single magnetic concentrator layer on the third Hall chip is equal to the coverage area of ​​the single magnetic concentrator layer on the fourth Hall chip.

[0014] In an exemplary embodiment, the first Hall chip is arranged opposite to the third Hall chip, and the second Hall chip is arranged opposite to the fourth Hall chip; the two oppositely arranged Hall chips are electrically connected in parallel and differentially; the first Hall chip pair group is used to detect the magnetic field in the horizontal direction, and the second Hall chip pair group is used to detect the magnetic field in the vertical direction.

[0015] In an exemplary embodiment, a preset area is formed between the first Hall chip, the second Hall chip, the third Hall chip, and the fourth Hall chip; and the single magnetic layer covers the preset area.

[0016] In an exemplary embodiment, the ratio of the coverage area of ​​the single magnetic concentrator layer on each Hall chip to the area of ​​each Hall chip is 1:(1-10).

[0017] In an exemplary embodiment, the distance between the edges of the two Hall chips in each group of the Hall pair chips is 5-500 microns, and the thickness of the single magnetic layer is 5-500 microns.

[0018] In an exemplary embodiment, the single magnetic layer is in the shape of an even-numbered polygon, a circle, an ellipse, or a star with an even number of corners.

[0019] According to a second aspect of an embodiment of the present application, a sensor element is provided, including:

[0020] A preset analog circuit board and the above-mentioned two-dimensional differential Hall chip arranged on the preset analog circuit board;

[0021] The center point connection line of two Hall chips along the x-axis direction in the two-dimensional differential Hall chip is arranged perpendicular to the current direction of the preset analog circuit board.

[0022] According to a third aspect of an embodiment of the present application, a method for measuring a magnetic field of a sensor element is provided, the method comprising:

[0023] Determine a first differential voltage calculation formula of a first Hall pair chip group in the sensor element and a second differential voltage calculation formula of the second Hall pair chip group;

[0024] Determine the sensitivity gain coefficient of each group of Hall pair chips to the z-axis magnetic field of the sensor element to obtain a preset gain coefficient;

[0025] Determine the analog circuit type corresponding to the preset analog circuit board in the sensor element;

[0026] Based on the first differential voltage calculation formula, the second differential voltage calculation formula, the analog circuit type, and the preset gain coefficient, a horizontal magnetic field signal of the sensor element is determined.

[0027] In an exemplary embodiment, determining a first differential voltage calculation formula of a first Hall pair chip group and a second differential voltage calculation formula of a second Hall pair chip group in the sensor element includes:

[0028] Determine a formula for the sine value of the angle and a formula for the cosine value of the angle according to the angle between the horizontal magnetic field of the sensor element and the x-axis;

[0029] Constructing a first differential voltage calculation formula of the first Hall pair chipset according to the angle sine value formula and the preset gain coefficient;

[0030] According to the angle cosine value formula and the preset gain coefficient, a second differential voltage calculation formula for the second Hall pair chipset is constructed.

[0031] In an exemplary embodiment, determining the horizontal magnetic field signal of the sensor element based on the first differential voltage calculation formula, the second differential voltage calculation formula, the analog circuit type, and the preset gain coefficient includes:

[0032] If the analog circuit type is a square sum analog circuit, a first differential voltage square sum formula is determined based on the first differential voltage calculation formula, and a second differential voltage square sum formula is determined based on the second differential voltage calculation formula;

[0033] Calculating the product of the preset gain coefficient and the horizontal magnetic field signal to obtain a gain magnetic field signal product formula;

[0034] constructing a square sum formula according to the sum of the first differential voltage square sum formula and the second differential voltage square sum formula;

[0035] The horizontal magnetic field signal of the sensor element is calculated according to the corresponding relationship between the square of the product of the gain magnetic field signal and the square sum formula.

[0036] In an exemplary embodiment, determining the horizontal magnetic field signal of the sensor element based on the first differential voltage calculation formula, the second differential voltage calculation formula, the analog circuit type, and the preset gain coefficient includes:

[0037] If the analog circuit type is an absolute value and analog circuit, a first differential voltage absolute value formula is determined based on the first differential voltage calculation formula, and a second differential voltage absolute value formula is determined based on the second differential voltage calculation formula;

[0038] Constructing an absolute value sum formula according to the sum of the first differential voltage absolute value formula and the second differential voltage absolute value formula;

[0039] Calculating the product of the preset gain coefficient and the horizontal magnetic field signal to obtain a gain magnetic field signal product formula;

[0040] Obtaining an angle sum formula according to the sum of the absolute value of the angle sine value formula and the absolute value of the angle cosine value formula;

[0041] Calculating the product of the gain magnetic field signal product formula and the angle sum formula to obtain a magnetic field angle product formula;

[0042] The horizontal magnetic field signal of the sensor element is calculated according to the corresponding relationship between the absolute value sum formula and the magnetic field angle product formula.

[0043] In an exemplary embodiment, the sensor element is an angle sensor, and determining the horizontal magnetic field signal of the sensor element based on the first differential voltage calculation formula, the second differential voltage calculation formula, the analog circuit type, and the preset gain coefficient includes:

[0044] If the analog circuit type is a division analog circuit, determining a first formula for the x-axis signal component of the horizontal magnetic field based on the first differential voltage calculation formula;

[0045] Determine a second formula for the y-axis signal component of the horizontal magnetic field based on the second differential voltage calculation formula;

[0046] Based on the first formula and the second formula, a calculation formula for the tangent value of the angle is constructed; the tangent angle is the angle between the horizontal magnetic field of the sensor element and the x-axis;

[0047] Based on the calculation formula of the tangent value of the angle, the output angle value of the angle sensor is calculated.

[0048] Compared with the prior art, the technical solution of the present invention has the following beneficial effects:

[0049] The two-dimensional differential Hall chip of the present invention comprises: two groups of Hall pair chips arranged in a cross shape and a single magnetic concentrator layer located on the two groups of Hall pair chips; each group of Hall pair chips comprises two Hall chips distributed at intervals, one group of Hall pair chips in the two groups of Hall pair chips is symmetrically arranged along the x-axis in the horizontal direction, and the other group of Hall pair chips is symmetrically arranged along the y-axis in the vertical direction; the projection of the single magnetic concentrator layer on the Hall sensitive surface of the two groups of Hall pair chips covers the central area of ​​the two groups of Hall pair chips; the single magnetic concentrator layer covers at least part of the two groups of Hall pair chips, and the single magnetic concentrator layer is symmetrically arranged along the x-axis and the y-axis. The present invention realizes the high sensitivity, zero drift, and large tolerance performance of the two-dimensional differential Hall chip; at the same time, since only one single magnetic concentrator layer is arranged, and the single magnetic concentrator layer is a single-layer structure, the miniaturization of the two-dimensional differential Hall chip is realized. BRIEF DESCRIPTION OF THE DRAWINGS

[0050] In order to more clearly illustrate the technical solution of the present invention, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0051] Figure 1 The structure of a two-dimensional differential Hall chip provided by an embodiment of the present invention is shown in FIG. Figure 1 ;

[0052] Figure 2 It is a cross-sectional view of a group of chips in a two-dimensional differential Hall chip provided by an embodiment of the present invention along the horizontal direction;

[0053] Figure 3 The structure of a two-dimensional differential Hall chip provided by an embodiment of the present invention is shown in FIG. Figure 2 ;

[0054] Figure 4-5 It is a wiring diagram of a two-dimensional differential Hall chip provided by an embodiment of the present invention;

[0055] Figure 6 It is a signal error comparison diagram of a two-dimensional differential Hall chip with a single magnetic concentrator layer according to an embodiment of the present invention and a dual magnetic concentrator chip of a related technology;

[0056] Figure 7 It is a schematic diagram of a linear Hall sensor structure corresponding to a square sum analog circuit provided by an embodiment of the present invention;

[0057] Figure 8 It is a schematic diagram of a switch sensor structure corresponding to an absolute value and an analog circuit provided by an embodiment of the present invention;

[0058] Fig. 9 is a schematic diagram of the structure of an angle sensor corresponding to a division analog circuit provided by an embodiment of the present invention;

[0059] Fig.10 A schematic diagram of magnetic field detection of an angle sensor provided in an embodiment of the present invention.

[0060] Among them, the reference numerals in the figure correspond to:

[0061] 1-first Hall chip pair group, 11-first Hall chip, 12-second Hall chip, 2-second Hall chip pair group, 21-third Hall chip, 22-fourth Hall chip, 3-single magnetic layer, 4-soldering pad, 5-electrode, 6-preset circuit board. DETAILED DESCRIPTION

[0062] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.

[0063] "One embodiment" or "embodiment" referred to herein refers to a specific feature, structure or characteristic that may be included in at least one implementation of the present application. In the description of the present application, it is to be understood that spatially relative terms, such as "below", "below", "lower", "on", "upper", "front", "back", "above" and the like may be used herein for ease of description to describe the relationship between an element or feature and another (or some) element or feature as illustrated in the figures. It is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present application. Spatially relative terms are intended to cover different orientations in the use or operation of the device except for the orientations depicted in the figures. The device can be oriented in other ways (rotated 90 degrees or in other orientations), and the spatially relative descriptors used herein can be similarly interpreted.

[0064] The following disclosure provides many different embodiments or examples for implementing the different features of the provided subject matter. Specific examples of components and configurations are described below to simplify the present disclosure. Of course, these components and configurations are only examples and are not intended to be restrictive. For example, in the following description, the formation of a first feature above or on a second feature may include an embodiment in which the first and second features are directly contacted, and may also include an embodiment in which an additional feature may be formed between the first and second features so that the first and second features may not be directly contacted. In addition, the present disclosure may repeat reference numbers and / or letters in various examples. This repetition is for the purpose of simplicity and clarity, and does not itself indicate the relationship between the various embodiments and / or configurations discussed.

[0065] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. Moreover, the terms "first", "second", etc. are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchangeable where appropriate so that the embodiments of the present application described herein can be implemented in an order other than those illustrated or described herein.

[0066] like Figure 1-3 As shown, an embodiment of the present invention provides a structural schematic diagram of a two-dimensional differential Hall chip, including: two groups of Hall pair chips arranged in a cross shape and a single magnetic concentrating layer 3 located on the two groups of Hall pair chips; each group of Hall pair chips includes two Hall chips distributed at intervals, one group of the two groups of Hall pair chips is symmetrically arranged along the x-axis in the horizontal direction, and the other group of Hall pair chips is symmetrically arranged along the y-axis in the vertical direction;

[0067] The projection of the single magnetic concentrating layer 3 on the Hall sensitive surface of the two groups of Hall pair chips covers the central area of ​​the two groups of Hall pair chips; the single magnetic concentrating layer 3 covers at least part of the two groups of Hall pair chips, and the single magnetic concentrating layer 3 is symmetrically arranged along the x-axis and the y-axis.

[0068] Among them, the two groups of Hall chip pairs include a first Hall chip pair group 1 and a second Hall chip pair group 2; the first Hall chip pair group 1 and the second Hall chip pair group 2 are perpendicular to each other, the first Hall chip pair group 1 includes a first Hall chip 11 and a second Hall chip 12, the first Hall chip 11 and the second Hall chip 12 are arranged side by side in a non-contact manner, the central axis of the first Hall chip 11 along the horizontal direction and the central axis of the second Hall chip 12 along the horizontal direction are located on the same straight line, and the central axis of the first Hall chip 11 along the vertical direction and the central axis of the second Hall chip 12 along the vertical direction are parallel to each other; Figure 1 , 3 As shown, the two-dimensional differential Hall chip includes a first Hall chip pair group arranged horizontally along the horizontal direction (x-axis): a first Hall chip 11 (Hall A), a second Hall chip 12 (Hall B) and a second Hall chip pair group arranged along the vertical direction (y-axis): a third Hall chip 21 (Hall C), a fourth Hall chip 11 (Hall D), and a single magnetic layer 3 symmetrically distributed along the x-axis and the y-axis is set on the first Hall chip pair group and the second Hall chip pair group; wherein, as Figure 1 As shown, the single magnetic layer 3 is a square structure. Figure 3 As shown, the single magnetic layer 3 is a regular hexagonal structure.

[0069] like Figure 2 As shown, the single magnetic layer 3 covers at least part of the first Hall chip 11 and at least part of the second Hall chip 12, and the coverage area of ​​the single magnetic layer 3 on the first Hall chip 11 is equal to the coverage area of ​​the single magnetic layer 3 on the second Hall chip 12. Figure 2 As shown by the green line in the middle, the single magnetic layer turns the horizontal magnetic field in the central area of ​​the Hall to one side upward and the other side downward, forming two Hall signals with opposite polarities. The parallel electrode connection method determines that the output is a differential signal. Its differential signal naturally eliminates the interference of the same-direction magnetic field. In addition, the working currents of the first Hall chip (Hall A) and the second Hall chip (Hall B) are perpendicular to each other, ensuring that their output zero bias is very low and the drift of the differential signal is very small.

[0070] In the embodiment of the present specification, the first Hall chip 11 and the second Hall chip 12 are differentially connected in parallel; a preset distance is maintained between the first Hall chip 11 and the second Hall chip 12. The single magnetic concentrator layer 3 is a single-layer structure, and only one single magnetic concentrator layer 3 is provided in the differential Hall chip, and the single magnetic concentrator layer 3 covers at least part of the first Hall chip 11, that is, the single magnetic concentrator layer 3 can cover a partial area or the entire area of ​​the first Hall chip 11, that is, partial coverage or full coverage of the first Hall chip 11 can be achieved; the second Hall chip 12 is also covered in the same manner, and the coverage area of ​​the single magnetic concentrator layer 3 on the first Hall chip 11 is equal to the coverage area of ​​the single magnetic concentrator layer 3 on the second Hall chip 12, that is, the single magnetic concentrator layer 3 is symmetrically arranged relative to the center line of the distance between the two Hall chips; each Hall chip is a cross-shaped structure, and each Hall chip includes four ends; when the single magnetic concentrator layer 3 covers a partial Hall chip, the single magnetic concentrator layer 3 covers the edge area on the side closest to the distance between the two Hall chips. Exemplarily, the single magnetic concentrator layer 3 simultaneously covers the spacing area between the first Hall chip 11 and the second Hall chip 12 , that is, the single magnetic concentrator layer 3 forms the connection portion between the first Hall chip 11 and the second Hall chip 12 .

[0071] In an exemplary embodiment, the first Hall chip 11 and the second Hall chip 12 have the same shape and structure, and both the first Hall chip 11 and the second Hall chip 12 have a cross-shaped symmetrical structure; the central axis of the first Hall chip 11 and the second Hall chip 12 in the horizontal direction can be set as the x-axis of symmetry, and the distance center line between the first Hall chip 11 and the second Hall chip 12 can be set as the y-axis of symmetry, and the first Hall chip 11 and the second Hall chip 12 are symmetrical about both the x-axis and the y-axis. Figure 2 As shown, the single magnetic layer 3 is arranged on the upper surface of the first Hall chip 11 and the second Hall chip 12, and at the same time covers part of the first Hall chip 11, part of the second Hall chip 12, and the area between the first Hall chip 11 and the second Hall chip 12.

[0072] In an exemplary embodiment, the second Hall chip pair group 2 includes a third Hall chip 21 and a fourth Hall chip 22; the third Hall chip 21 and the fourth Hall chip 22 are arranged side by side in a non-contact manner, the central axis of the third Hall chip 21 along the horizontal direction is parallel to the central axis of the fourth Hall chip 22 along the horizontal direction, and the central axis of the third Hall chip 21 along the vertical direction is located on the same straight line as the central axis of the fourth Hall chip 22 along the vertical direction;

[0073] The single magnetic concentrating layer 3 covers at least a portion of the third Hall chip 21 and at least a portion of the fourth Hall chip 22 , and the coverage area of ​​the single magnetic concentrating layer 3 on the third Hall chip 21 is equal to the coverage area of ​​the single magnetic concentrating layer 3 on the fourth Hall chip 22 .

[0074] In the embodiment of this specification, the center points of the first Hall chip 11, the second Hall chip 12, the third Hall chip 21 and the fourth Hall chip 22 can be located on the same circumference. The first Hall chip 11 and the second Hall chip 12 are symmetrically distributed along the horizontal direction (x-axis) and the vertical direction (y-axis); the third Hall chip 21 and the fourth Hall chip 22 are symmetrically distributed along the horizontal direction (x-axis) and the vertical direction (y-axis); illustratively, the center axis of the first Hall chip 11 and the second Hall chip 12 in the horizontal direction is the x-axis, and the center axis of the third Hall chip 21 and the fourth Hall chip 22 in the vertical direction is the y-axis.

[0075] In this embodiment, two symmetrically distributed third Hall chips 21 and fourth Hall chips 22 can be arranged in the vertical direction to ensure the symmetry of the differential Hall chip with a two-dimensional structure, and a corresponding single magnetic layer 3 is arranged on the symmetrical chip structure, thereby ensuring the symmetry of the overall structure of the differential Hall chip, thereby realizing the differential Hall chip with high sensitivity, zero drift and large tolerance performance.

[0076] In an exemplary embodiment, the first Hall chip 11 is arranged opposite to the third Hall chip 21, and the second Hall chip 12 is arranged opposite to the fourth Hall chip 22; the two oppositely arranged Hall chips are differentially electrically connected in parallel; the first Hall chip pair group 1 is used to detect the magnetic field in the horizontal direction, and the second Hall chip pair group 2 is used to detect the magnetic field in the vertical direction.

[0077] In the embodiment of the present specification, the distance between the third Hall chip 21 and the first Hall chip 11 is equal to the distance between the third Hall chip 21 and the second Hall chip 12; the distance between the fourth Hall chip 22 and the first Hall chip 11 is equal to the distance between the fourth Hall chip 22 and the second Hall chip 12. All chips in the two Hall chip groups form a cross structure, wherein the first Hall chip group 1 located in the horizontal direction is used to detect the magnetic field in the horizontal direction, and the second Hall chip group 2 located in the vertical direction is used to detect the magnetic field in the vertical direction. The two-dimensional structure can be used to detect the magnetic field in the horizontal direction and the vertical direction at the same time. The parallel differential electrical connection of the two Hall chips arranged opposite to each other can subtract the z-axis signals of the two Hall chips, thereby improving the detection accuracy of the magnetic field signals in the horizontal direction and the vertical direction.

[0078] In an exemplary embodiment, a preset area is formed between the first Hall chip 11 , the second Hall chip 12 , the third Hall chip 21 and the fourth Hall chip 22 ; and the single magnetic layer 3 covers the preset area.

[0079] In the embodiment of the present specification, the non-contact area between the first Hall chip 11, the second Hall chip 12, the third Hall chip 21 and the fourth Hall chip 22 forms a preset area; the single magnetic layer 3 can cover the preset area, and when the single magnetic layer 3 covers part of the Hall chip, the part of the Hall chip covered is the part of each Hall chip close to the preset area. In this embodiment, the single magnetic layer 3 can cover the spacing area between multiple Hall chips and cover at least part of each Hall chip, so as to ensure the connection relationship between the single magnetic layer and the multiple Hall chips.

[0080] In the embodiment of the present specification, the single magnetic concentrating layer 3 may cover part or all of the first Hall pair chip group 1, cover part or all of the second Hall pair chip group 2, and cover part or all of the interval area between the first Hall pair chip group 1 and the second Hall pair chip group 2. By providing a single magnetic concentrating layer covering each chip group on a two-dimensional structure chip, the number of magnetic concentrating layers is reduced, the structural design of the differential Hall chip is simplified, the size of the differential Hall chip is reduced, and the miniaturization of the two-dimensional structure differential Hall chip is achieved.

[0081] In the embodiment of the present specification, the coverage area of ​​the single magnetic concentrating layer 3 on the first Hall pair chip group 1 is equal to the coverage area of ​​the single magnetic concentrating layer 3 on the second Hall pair chip group 2; that is, when the single magnetic concentrating layer 3 covers part of the first Hall pair chip group 1, it also covers part of the second Hall pair chip group 2; when the single magnetic concentrating layer 3 covers the entire first Hall pair chip group 1, it also covers the entire second Hall pair chip group 2. By controlling the coverage area of ​​the single magnetic concentrating layer 3 on the first Hall pair chip group 1 to be equal to the coverage area of ​​the single magnetic concentrating layer 3 on the second Hall pair chip group 2, the single magnetic concentrating layer 3 is symmetrically arranged on the Hall pair chip with a two-dimensional structure. The design of the single magnetic concentrating layer 3 with a symmetrical structure effectively eliminates the interference of the z-axis magnetic field, thereby improving the sensitivity of the magnetic field signal test.

[0082] In the embodiment of the present specification, the size of each Hall chip in the Hall chip pair is the same, and the ratio of the coverage area of ​​the single magnetic layer 3 on each Hall chip to the area of ​​each Hall chip is 1:(1-10).

[0083] In the embodiment of the present specification, the distance between the edges of the two Hall chips in each group of the Hall pair chips is 5-500 microns, and the thickness of the single magnetic layer 3 is 5-500 microns.

[0084] In the embodiments of the present specification, in the two-dimensional structure, the ratio of the coverage area of ​​the single magnetic layer 3 on each Hall chip to the area of ​​each Hall chip is 1:(1-5); the distance between the edges of the two Hall chips in each group of the Hall pair chips can be set to 5-500 microns, and the thickness of the single magnetic layer 3 can be set to 5-500 microns; thereby, the sensitivity of the differential Hall chip can be further improved, and zero drift and large tolerance performance can be achieved.

[0085] In the embodiment of this specification, the single magnetic layer 3 is an even polygon, a circle, an ellipse or a star with an even number of corners. The single magnetic layer 3 is a symmetrical structure and can be set to a symmetrical even polygon, a circle, an ellipse or a star; for example, it can be set to a four-pointed star structure, etc. The single magnetic layer 3 can also be set to a symmetrical structure of any other shape; the flexibility of the shape setting of the single magnetic layer 3 and the diversity of shape selection are realized; the use of single magnetic layers 3 of different shapes can achieve high sensitivity, zero drift, and large tolerance performance of the differential Hall chip.

[0086] Exemplarily, the material of the single magnetic layer 3 can be a material with high magnetic permeability, such as ferrite, iron-nickel alloy, soft magnetic material, silicon steel and the like.

[0087] like Figure 4-5 As shown, Figure 4-5 It is a wiring diagram of a differential Hall chip with a two-dimensional structure provided by an embodiment of the present invention; the first Hall chip 11, the second Hall chip 12, the third Hall chip 21, and the fourth Hall chip 22 are connected by connecting wires, and pads 4 are provided between the connecting wires. The four ports of each Hall chip are provided with electrodes 5, and the electrodes 5 of the two Hall chips are connected by wires, and pads 4 are provided between the wires. Each Hall chip includes two first electrodes arranged horizontally and two second electrodes arranged vertically; wherein, in the two Hall chips arranged oppositely, the first electrode arranged horizontally in one Hall chip is used to apply voltage, and the second electrode arranged vertically is used to generate a first Hall potential; the second electrode arranged vertically in the other Hall chip is used to apply voltage, and the first electrode arranged horizontally is used to generate a second Hall potential, and the first Hall potential and the second Hall potential are connected in parallel to realize signal extraction. The two first electrodes of the first Hall chip 11 are respectively connected to the two second electrodes of the second Hall chip 12, and pads 4 are respectively arranged on the two connecting lines. The two second electrodes of the first Hall chip 11 are respectively connected to the two first electrodes of the second Hall chip 12, and pads 4 are respectively arranged on the two connecting lines. By applying voltage to one group of pads 4, Hall potential is generated on the other group of pads. Figure 4 The single magnetic layer 3 in the figure is elliptical. Figure 5 The single magnetic layer 3 in the structure is a symmetrical four-pointed star.

[0088] like Figure 6 As shown, the two-dimensional Hall chip of this embodiment and the chip in the prior art with magnets attached to both sides of the two Halls are used to test the signal error, and the following is obtained: Figure 6 The test comparison results shown in the figure show that the chip test results (blue curve) of this embodiment have a 12-micron position error and a maximum signal error of only 2.5% under the bad conditions of 2-degree angle deviation and translation error, while the error of the original dual-magnet chip test results (black curve) reaches 20%. The error of the present invention has dropped by 8 times, and the curve is always in the lower error area, showing good installation tolerance performance. In addition, calculations show that the signal gain of the single-magnet signal is increased by 30%.

[0089] like Figure 7-9 As shown, this embodiment further provides a sensor element, including:

[0090] A preset analog circuit board 6 and the above-mentioned two-dimensional differential Hall chip arranged on the preset analog circuit board 6;

[0091] The line connecting the center points of two Hall chips along the x-axis direction in the two-dimensional differential Hall chip is perpendicular to the current direction of the preset analog circuit board 6 .

[0092] The analog circuit types of the preset analog circuit board 6 may include a square sum analog circuit, an absolute value sum analog circuit, and a division analog circuit. When the preset analog circuit board 6 is a square sum analog circuit board, the sensor element may include but is not limited to a linear Hall sensor; when the preset analog circuit board 6 is an absolute value sum analog circuit board, the sensor element may include but is not limited to a switch sensor; when the preset analog circuit board 6 is a division analog circuit board, the sensor element may include but is not limited to an angle sensor.

[0093] like Figure 7 As shown, by setting a two-dimensional differential Hall chip on the square and analog circuit board 7, a linear Hall sensor is formed, and the single magnetic layer 5 of the two-dimensional differential Hall chip can be a regular quadrilateral structure; Figure 8 As shown, a switch sensor is formed by arranging a two-dimensional differential Hall chip on the absolute value and analog circuit board 7. The single magnetic concentrator layer 5 of the two-dimensional differential Hall chip can be a regular octagonal structure, such as Fig. 9 As shown, by setting a two-dimensional differential Hall chip on the division analog circuit board 7, an angle sensor is formed, and the single magnetic layer 5 of the two-dimensional differential Hall chip can be a regular dodecagonal structure. Fig.10 As shown, Fig.10 A schematic diagram of magnetic field detection of an angle sensor provided in an embodiment of the present invention; the angle between the magnetic field and the horizontal plane can be accurately detected by the angle sensor.

[0094] The electrode wiring of the dual-axis Hall pair can be optimized to the minimum and then connected to the conditioning circuit, and then packaged to make a two-dimensional magnetic field detection device. In order to achieve accurate two-axis magnetic field detection and complete elimination of the z-axis magnetic field, the position of the single magnetic concentrator layer must be accurate. This requires the use of photolithography to make the magnetic concentrator layer at the precise design position. With this core chip, coupled with the matching circuit and package, a two-axis magnetic field detection device can be made for precise displacement measurement linear Hall or switch Hall or angle sensor.

[0095] In this embodiment, considering the actual requirements of wiring, the core area of ​​the four Hall chips is less than 10 times the size of a single Hall. If the area of ​​each Hall chip is 150*150 microns, the length and width of the device can be controlled within 440*500 microns, realizing a compact 2D magnetic field sensor. If high-performance semiconductor compound materials are used, the area of ​​a single Hall region is reduced to 1 / 4, and the chip area can be controlled to 220*250 microns. This will greatly enhance the advantages of device miniaturization and cost.

[0096] The sensor element of the present invention includes a two-dimensional differential Hall chip, which includes two Hall pair chips arranged vertically to each other, and the two Hall pair chips are connected to form a parallel differential Hall pair; the projection of the single magnetic concentrating layer on the Hall sensitive surface covers the central area of ​​the differential Hall chip, thereby eliminating the z-axis magnetic field signal, ensuring that the output of the differential Hall chip does not contain the z-axis magnetic field signal, so as to improve the detection accuracy of the magnetic field signal; the high sensitivity, zero drift and large tolerance performance of the sensor element are achieved; at the same time, since only a single magnetic concentrating layer is set, and the single magnetic concentrating layer is a single-layer structure, the miniaturization of the sensor element is achieved.

[0097] The embodiment of the present invention further provides a method for measuring a magnetic field of a sensor element, wherein the sensor element is constructed based on a two-dimensional differential Hall chip and a preset analog circuit board; the method comprises:

[0098] Determine a first differential voltage calculation formula of a first Hall pair chip group in the sensor element and a second differential voltage calculation formula of the second Hall pair chip group;

[0099] Determine the sensitivity gain coefficient of each group of Hall pair chips to the z-axis magnetic field of the sensor element to obtain a preset gain coefficient;

[0100] Determine the analog circuit type corresponding to the preset analog circuit board in the sensor element;

[0101] Based on the first differential voltage calculation formula, the second differential voltage calculation formula, the analog circuit type, and the preset gain coefficient, a horizontal magnetic field signal of the sensor element is determined.

[0102] In some embodiments, the method further comprises:

[0103] Determine the sensitivity gain coefficient of the first Hall chip set to the x-axis magnetic field to obtain the x-axis gain coefficient k x ;

[0104] The x-axis signal component B based on the x-axis gain coefficient and the horizontal magnetic field of the sensor element x , construct the first differential voltage calculation formula: V AB =(V A -V B ) / 2=k x B x ;

[0105] Determine the sensitivity gain coefficient of the second Hall chip set to the y-axis magnetic field, and obtain the y-axis gain coefficient k y ;

[0106] Based on the y-axis gain coefficient and the y-axis signal component of the horizontal magnetic field of the sensor element, the second differential voltage calculation formula is constructed: V CD =(V C -V D ) / 2=k y B y .

[0107] In the embodiment of this specification, the first differential voltage calculation formula is constructed based on the x-axis gain coefficient and the x-axis signal component of the horizontal magnetic field of the sensor element, including:

[0108] Determine the sensitivity gain coefficient of the first Hall chip pair group to the z-axis magnetic field to obtain a first gain coefficient k1;

[0109] Acquire a first Hall chip and a second Hall chip in the first Hall chip pair group;

[0110] Determine the first gain coefficient and the z-axis signal component B of the horizontal magnetic field z The first product formula of the x-axis gain coefficient and the x-axis signal component B of the horizontal magnetic field x The second product formula of ;

[0111] Based on the sum of the first product formula and the second product formula, a first magnetic field signal calculation formula of the first Hall chip is constructed: V A =K1B z +K x B x ;

[0112] Based on the difference between the first product formula and the second product formula, a second magnetic field signal calculation formula for the second Hall chip is constructed: V B =K1B z -K x B x ;

[0113] Based on the difference between the first magnetic field signal calculation formula and the second magnetic field signal calculation formula, the first differential voltage calculation formula is constructed: V AB =(V A -V B ) / 2=k x B x .

[0114] In the embodiment of this specification, the second differential voltage calculation formula is constructed based on the y-axis gain coefficient and the y-axis signal component of the horizontal magnetic field of the sensor element, including:

[0115] Determine the sensitivity gain coefficient of the second Hall chip set to the z-axis magnetic field to obtain a second gain coefficient k2;

[0116] Acquire a third Hall chip and a fourth Hall chip in the second Hall chip pair group;

[0117] Determine the second gain coefficient and the z-axis signal component B of the horizontal magnetic field z The third product formula of the y-axis gain coefficient and the y-axis signal component B of the horizontal magnetic field y The fourth product formula of ;

[0118] Based on the sum of the third product formula and the fourth product formula, a third magnetic field signal calculation formula of the third Hall chip is constructed: C =K2B z +K y B y ;

[0119] Based on the difference between the third product formula and the fourth product formula, a fourth magnetic field signal calculation formula of the fourth Hall chip is constructed: V C =K2B z +K y B y ;

[0120] Based on the difference between the third magnetic field signal calculation formula and the fourth magnetic field signal calculation formula, the second differential voltage calculation formula is constructed: V CD =(V C -V D ) / 2=k y B y .

[0121] In the embodiment of the present specification, the step of determining a first differential voltage calculation formula of the first Hall pair chipset and a second differential voltage calculation formula of the second Hall pair chipset in the sensor element includes:

[0122] Determine a formula for the sine value of the angle and a formula for the cosine value of the angle according to the angle between the horizontal magnetic field of the sensor element and the x-axis;

[0123] Constructing a first differential voltage calculation formula of the first Hall pair chipset according to the angle sine value formula and the preset gain coefficient;

[0124] According to the angle cosine value formula and the preset gain coefficient, a second differential voltage calculation formula for the second Hall pair chipset is constructed.

[0125] In the embodiment of the present specification, the angle a between the horizontal magnetic field of the sensor element and the x-axis is obtained; according to the angle between the horizontal magnetic field of the sensor element and the x-axis, the angle sine value formula cosa and the angle cosine value formula sina are determined; then, according to the angle sine value formula and the preset gain coefficient, the first differential voltage calculation formula of the first Hall pair chipset is constructed:

[0126] V AB =kB 水平 cosa

[0127] Among them, V AB is the first differential voltage, k is the preset gain coefficient, a is the angle between the horizontal magnetic field of the sensor element and the x-axis, B 水平 is the strength of the horizontal magnetic field signal of the sensor element, B 水平 cosa is B x .

[0128] According to the angle cosine value formula and the preset gain coefficient, a second differential voltage calculation formula of the second Hall pair chipset is constructed:

[0129] V CD =kB 水平 sina

[0130] Among them, V CD is the second differential voltage, k is the preset gain coefficient, a is the angle between the horizontal magnetic field of the sensor element and the x-axis, B 水平 sina is B y .

[0131] In the embodiment of this specification, since the two-dimensional differential Hall chip is a completely symmetrical structure, the sensitivity gain coefficient of each set of Hall pair chips to the z-axis magnetic field of the sensor element is the same, which is the preset gain coefficient k; even if they are not equal due to process factors, they can be unified by adjusting the electrical gain in the circuit through later calibration. The differential voltage calculation formula constructed in this embodiment based on the preset gain coefficient simplifies the calculation method of the differential voltage output by each of the two sets of Hall pair chips.

[0132] In an embodiment of the present specification, determining the horizontal magnetic field signal of the sensor element based on the first differential voltage calculation formula, the second differential voltage calculation formula, the analog circuit type, and the preset gain coefficient includes:

[0133] If the analog circuit type is a square sum analog circuit, a first differential voltage square sum formula is determined based on the first differential voltage calculation formula, and a second differential voltage square sum formula is determined based on the second differential voltage calculation formula; wherein the first differential voltage square sum formula is V AB 2 , the second differential voltage square sum formula is V CD 2 ;

[0134] Calculate the product of the preset gain coefficient and the horizontal magnetic field signal to obtain the gain magnetic field signal product formula: kB 水平

[0135] According to the sum of the first differential voltage square sum formula and the second differential voltage square sum formula, a square sum formula is constructed: V AB 2 +V CD 2 ;

[0136] According to the corresponding relationship between the square of the product of the gain magnetic field signal and the square sum formula, the horizontal magnetic field signal of the sensor element is calculated; illustratively, the calculation formula is as follows:

[0137] V AB 2 +V CD 2 =k 2 B 水平 2

[0138] In the embodiments of this specification, Figure 7As shown, the two-dimensional differential Hall chip with a tight arrangement design can be placed on a square sum analog circuit board, and then packaged into a two-dimensional analog element for horizontal magnetic field strength detection. The square sum of the two-dimensional differential Hall chip signal is proportional to the square of the horizontal magnetic field strength. The sensitivity coefficient of its value and the square of the magnetic field strength is obtained by calibration. It can be used in linear measurement systems such as current sensors and linear displacement sensors. When used, digital circuits are required to condition its signals to obtain the required signal.

[0139] In the embodiments of the present specification, when the analog circuit type is a square-sum analog circuit, the sensor element is a linear Hall sensor. Since the calculation formulas for the differential voltages output by the two groups of Hall chips are simplified, the calculation formulas for the horizontal magnetic field signal of the sensor element determined by the first differential voltage calculation formula and the second differential voltage calculation formula are also simplified. The intensity information of the horizontal magnetic field signal of the sensor element corresponding to the square-sum analog circuit can be obtained through simple calculations.

[0140] In an embodiment of the present specification, determining the horizontal magnetic field signal of the sensor element based on the first differential voltage calculation formula, the second differential voltage calculation formula, the analog circuit type, and the preset gain coefficient includes:

[0141] If the analog circuit type is an absolute value and analog circuit, the first differential voltage absolute value formula is determined based on the first differential voltage calculation formula: |V AB |, and determining the second differential voltage absolute value formula based on the second differential voltage calculation formula: |V CD |;

[0142] According to the sum of the first differential voltage absolute value formula and the second differential voltage absolute value formula, an absolute value sum formula is constructed: |V AB |+|V CD |;

[0143] Calculate the product of the preset gain coefficient and the horizontal magnetic field signal to obtain the gain magnetic field signal product formula: kB 水平 ;

[0144] Calculate the sum of the absolute value of the sine value and the absolute value of the cosine value to obtain the angle sum formula: |sina|+|cosa|;

[0145] Calculate the product of the gain magnetic field signal product formula and the angle sum formula to obtain the magnetic field angle product formula: kB 水平

|sina|+|cosa|

[0146] According to the correspondence between the absolute value sum formula and the magnetic field angle product formula, the horizontal magnetic field signal of the sensor element is calculated; illustratively, the calculation formula is as follows:

[0147] |V AB |+|V CD |=kB 水平

|sina|+|cosa|

[0148] In the embodiments of this specification, since |sina|+|cosa| changes slightly with a, in scenarios where the accuracy of the magnetic field signal is not required to be high, the horizontal magnetic field signal of the sensor element can be quickly calculated according to the above formula.

[0149] Although the magnetic field signal obtained by this calculation formula has an overall fluctuation of 41% with the change of magnetic field angle, it can be applied in application scenarios with relatively low requirements for signal accuracy. For example, for a proximity switch, when the detected magnetic field signal exceeds the threshold (which can be set to 1mm), the output signal triggers an action (turning off the light or other). Threshold 1 is the worst case in which magnetic fields of 1-1.414 strength at all angles may be triggered at the same distance, or in other words, the distance of the magnet approaching the Hall is different when the threshold is reached at different angles. Because the magnetic field strength is inversely proportional to the square of the distance, the distance deviation caused by the 1.414 times strength relationship is only 19%, that is, when the magnet approaches the switch at different angles, the distance difference in triggering the action is less than one-fifth. For example, if the set threshold is 2mm, the distance between the magnet and the Hall chip when the threshold is reached at each angle is 2-2.4mm. In addition, the magnet is generally fixed, and the magnetic field angle corresponding to its switch point does not change much. It is reasonable to set it to ±10 degrees, then the distance detection deviation of the overall system is less than 16% in the worst case, and only 2.2% in the best case (related to the set angle). The difference between the open and close thresholds can be increased by the above error deviation value. For example, when the distance deviation is 10% and the magnetic field strength deviation is 21%, the Hall open proximity threshold is set to 0.8 and the closed threshold is set to 1.2. The difference between them is 50%, which is much less than 21% and will not cause false triggering. At this time, the distance range is 2-2.1mm.

[0150] In the embodiments of this specification, in application scenarios with low signal requirements, sensor elements can be constructed on absolute values ​​and analog circuits. For example, the sensor element can be a two-dimensional Hall proximity switch. In this case, the calculation formula of absolute value summation can accurately control the Hall proximity switch.

[0151] In an embodiment of the present specification, the sensor element is an angle sensor, and determining the horizontal magnetic field signal of the sensor element based on the first differential voltage calculation formula, the second differential voltage calculation formula, the analog circuit type, and the preset gain coefficient includes:

[0152] If the analog circuit type is a division analog circuit, based on the first differential voltage calculation formula, a first formula for the x-axis signal component of the horizontal magnetic field is determined: V AB =(V A -V B ) / 2=k x B x ;

[0153] Based on the second differential voltage calculation formula, a second formula for the y-axis signal component of the horizontal magnetic field is determined: CD =(V C -V D ) / 2=k y B y ;

[0154] Based on the first formula and the second formula, a calculation formula for the tangent value of the angle is constructed: tan a = (k x V CD ) / (k y V AB ); the angle is the angle between the horizontal magnetic field of the sensor element and the x-axis; the sensor element manufactured by the method of processing a single magnetic layer and then installing it adopts the calculation formula of the tangent value of the angle;

[0155] Based on the calculation formula of the tangent value of the angle, the output angle value of the angle sensor is calculated.

[0156] For the photolithography method, the error is small enough to be ignored. At this time, the sensor can be considered to be in an ideal completely symmetrical state, kx = ky = k, then tan a = V CD / V AB .

[0157] In the embodiments of the present specification, when the analog circuit type is a division analog circuit, since the calculation formulas for the differential voltages output by the two groups of Hall-pair chips are simplified, the calculation formula for the tangent value of the magnetic field angle of the sensor element determined by the first differential voltage calculation formula and the second differential voltage calculation formula is also simplified, and the angle value of the angle sensor can be prepared through simple calculations.

[0158] In the embodiment of the present specification, when the single magnetic concentrator layer is completely symmetrical, the x-axis gain coefficient is the same as the y-axis gain coefficient, and the angle tangent value is the ratio of the second differential voltage to the first differential voltage.

[0159] In the embodiment of this specification, the calculation of the output angle value of the angle sensor based on the calculation formula of the tangent value of the angle includes:

[0160] Calculate the sine value of the angle based on the calculation formula of the tangent value of the angle;

[0161] The output angle value of the angle sensor is obtained by performing a table lookup or adopting an inverse tangent operation technique based on the sine value of the angle.

[0162] In the embodiments of this specification, kx and ky are equal in design, and the output signal strength of the two Hall pairs is proportional to Bx, By. The function of obtaining the horizontal magnetic field strength can be achieved through a simple analog circuit. The equality of kx and ky is achieved by the two sets of Hall pair chips and the single magnetic layer being symmetrical relative to the x-axis and the y-axis, that is, their structures have the characteristics of 90-degree rotational symmetry. This can be achieved by setting the two sets of Hall pair chips to a symmetrical structure and designing the single magnetic layer to be a regular polygon with an even number of sides.

[0163] The magnetic field measurement method of the sensor element of the present invention can obtain the strength information of the horizontal magnetic field signal through simple calculation, and the measurement method realizes 2D detection of the planar magnetic field strength with low drift, high isolation and high precision.

[0164] Those skilled in the art will readily appreciate other embodiments of the present application after considering the specification and practicing the invention disclosed herein. The present application is intended to cover any modification, use or adaptation of the present application, which follows the general principles of the present application and includes common knowledge or customary techniques in the art that are not disclosed in the present application. The specification and examples are intended to be exemplary only, and the true scope and spirit of the present application are indicated by the claims.

[0165] It should be understood that the present application is not limited to the precise structures that have been described above and shown in the drawings, and that various modifications and changes may be made without departing from the scope thereof. The scope of the present application is limited only by the appended claims.

Claims

1. A two-dimensional differential Hall chip, characterized in that: include: Two groups of Hall pair chips arranged in a cross shape and a single magnetic concentrating layer located on the two groups of Hall pair chips; each group of Hall pair chips includes two Hall chips distributed at intervals, one group of Hall pair chips in the two groups of Hall pair chips is symmetrically arranged along the x-axis in the horizontal direction, and the other group of Hall pair chips is symmetrically arranged along the y-axis in the vertical direction; The projection of the single magnetic concentrating layer on the Hall sensitive surface of the two groups of Hall pair chips covers the central area of ​​the two groups of Hall pair chips; the single magnetic concentrating layer covers at least part of the two groups of Hall pair chips, and the single magnetic concentrating layer is symmetrically arranged along the x-axis and the y-axis.

2. The chip according to claim 1, characterized in that: The two groups of Hall chip pairs include a first Hall chip pair group and a second Hall chip pair group; the first Hall chip pair group and the second Hall chip pair group are perpendicular to each other, the first Hall chip pair group includes a first Hall chip and a second Hall chip, the first Hall chip and the second Hall chip are arranged side by side in a non-contact manner, the central axis of the first Hall chip along the horizontal direction and the central axis of the second Hall chip along the horizontal direction are located on the same straight line, and the central axis of the first Hall chip along the vertical direction and the central axis of the second Hall chip along the vertical direction are parallel to each other; The single magnetic concentrator layer covers at least a portion of the first Hall chip and at least a portion of the second Hall chip, and the coverage area of ​​the single magnetic concentrator layer on the first Hall chip is equal to the coverage area of ​​the single magnetic concentrator layer on the second Hall chip.

3. The chip according to claim 2, characterized in that: The second Hall chip pair group includes a third Hall chip and a fourth Hall chip; the third Hall chip and the fourth Hall chip are arranged side by side in a contactless manner, the central axis of the third Hall chip along the horizontal direction is parallel to the central axis of the fourth Hall chip along the horizontal direction, and the central axis of the third Hall chip along the vertical direction is located on the same straight line as the central axis of the fourth Hall chip along the vertical direction; The single magnetic concentrator layer covers at least a portion of the third Hall chip and at least a portion of the fourth Hall chip, and the coverage area of ​​the single magnetic concentrator layer on the third Hall chip is equal to the coverage area of ​​the single magnetic concentrator layer on the fourth Hall chip.

4. The chip according to claim 3, characterized in that: The first Hall chip is arranged opposite to the third Hall chip, and the second Hall chip is arranged opposite to the fourth Hall chip; the two oppositely arranged Hall chips are electrically connected in parallel and differentially; the first Hall chip pair group is used to detect the magnetic field in the horizontal direction, and the second Hall chip pair group is used to detect the magnetic field in the vertical direction.

5. The chip according to claim 3, characterized in that: A preset area is formed between the first Hall chip, the second Hall chip, the third Hall chip and the fourth Hall chip; and the single magnetic layer covers the preset area.

6. The chip according to claim 3, characterized in that: The ratio of the coverage area of ​​the single magnetic layer on each Hall chip to the area of ​​each Hall chip is 1:(1-10).

7. The chip according to claim 3, characterized in that: The distance between the edges of the two Hall chips in each group of the Hall pair chips is 5-500 microns, and the thickness of the single magnetic layer is 5-500 microns.

8. The chip according to claim 1, characterized in that: The single magnetic concentrating layer is in the shape of an even polygon, a circle, an ellipse or a star with an even number of corners.

9. A sensor element, characterized in that: include: A preset analog circuit board and a two-dimensional differential Hall chip as claimed in any one of claims 1 to 8 arranged on the preset analog circuit board; The center point connection line of two Hall chips along the x-axis direction in the two-dimensional differential Hall chip is arranged perpendicular to the current direction of the preset analog circuit board.

10. A method for measuring a magnetic field of a sensor element, characterized in that: The sensor element is the sensor element according to claim 9, and the method comprises: Determine a first differential voltage calculation formula of a first Hall pair chip group in the sensor element and a second differential voltage calculation formula of the second Hall pair chip group; Determine the sensitivity gain coefficient of each group of Hall pair chips to the z-axis magnetic field of the sensor element to obtain a preset gain coefficient; Determine the analog circuit type corresponding to the preset analog circuit board in the sensor element; Based on the first differential voltage calculation formula, the second differential voltage calculation formula, the analog circuit type, and the preset gain coefficient, a horizontal magnetic field signal of the sensor element is determined.

11. The method according to claim 10, characterized in that The step of determining a first differential voltage calculation formula of the first Hall pair chip group and a second differential voltage calculation formula of the second Hall pair chip group in the sensor element comprises: Determine a formula for the sine value of the angle and a formula for the cosine value of the angle according to the angle between the horizontal magnetic field of the sensor element and the x-axis; Constructing a first differential voltage calculation formula of the first Hall pair chipset according to the angle sine value formula and the preset gain coefficient; According to the angle cosine value formula and the preset gain coefficient, a second differential voltage calculation formula of the second Hall pair chipset is constructed.

12. The method according to claim 10, characterized in that The determining the horizontal magnetic field signal of the sensor element based on the first differential voltage calculation formula, the second differential voltage calculation formula, the analog circuit type, and the preset gain coefficient includes: If the analog circuit type is a square sum analog circuit, a first differential voltage square sum formula is determined based on the first differential voltage calculation formula, and a second differential voltage square sum formula is determined based on the second differential voltage calculation formula; Calculating the product of the preset gain coefficient and the horizontal magnetic field signal to obtain a gain magnetic field signal product formula; constructing a square sum formula according to the sum of the first differential voltage square sum formula and the second differential voltage square sum formula; The horizontal magnetic field signal of the sensor element is calculated according to the corresponding relationship between the square of the product of the gain magnetic field signal and the square sum formula.

13. The method according to claim 10, characterized in that The determining the horizontal magnetic field signal of the sensor element based on the first differential voltage calculation formula, the second differential voltage calculation formula, the analog circuit type, and the preset gain coefficient includes: If the analog circuit type is an absolute value and analog circuit, a first differential voltage absolute value formula is determined based on the first differential voltage calculation formula, and a second differential voltage absolute value formula is determined based on the second differential voltage calculation formula; Constructing an absolute value sum formula according to the sum of the first differential voltage absolute value formula and the second differential voltage absolute value formula; Calculating the product of the preset gain coefficient and the horizontal magnetic field signal to obtain a gain magnetic field signal product formula; Obtaining an angle sum formula according to the sum of the absolute value of the angle sine value formula and the absolute value of the angle cosine value formula; Calculating the product of the gain magnetic field signal product formula and the angle sum formula to obtain a magnetic field angle product formula; The horizontal magnetic field signal of the sensor element is calculated according to the corresponding relationship between the absolute value sum formula and the magnetic field angle product formula.

14. The method according to claim 10, characterized in that The sensor element is an angle sensor, and determining the horizontal magnetic field signal of the sensor element based on the first differential voltage calculation formula, the second differential voltage calculation formula, the analog circuit type, and the preset gain coefficient includes: If the analog circuit type is a division analog circuit, determining a first formula for the x-axis signal component of the horizontal magnetic field based on the first differential voltage calculation formula; Determine a second formula for the y-axis signal component of the horizontal magnetic field based on the second differential voltage calculation formula; Based on the first formula and the second formula, a calculation formula for the tangent value of the angle is constructed; the tangent angle is the angle between the horizontal magnetic field of the sensor element and the x-axis; Based on the calculation formula of the tangent value of the angle, the output angle value of the angle sensor is calculated.

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