Method for preparing electronic device with gold nano sawtooth grating structure, electronic device and chip

Abstract

The application discloses a preparation method of an electronic device based on a gold nanometer sawtooth grating structure, a device and a chip. A nano-hole-possessing soft film is used to perform imprinting on a photoresist layer coated on a glass substrate, so as to form a nano-square array structure on the glass substrate. Residual layers of the photoresist layer between the nano-square array structure and an organic glass layer coated on the glass substrate are etched, so as to form a to-be-angle thermal evaporation structure on the glass substrate. An angle thermal evaporation technology is used to perform thermal evaporation on the to-be-angle thermal evaporation structure at a specific incident angle, so as to form a chromium / gold composite thin film coating layer on the to-be-angle thermal evaporation structure. The organic glass layer, the photoresist layer and selected connecting lines on the glass substrate are peeled off, so as to obtain the electronic device based on the gold nanometer sawtooth grating structure. The preparation method has low cost and high throughput, can be used to prepare a large-area gold nanometer sawtooth grating structure, and realizes mass production of the electronic device based on the gold nanometer sawtooth grating structure.

Description

Technical Field

[0001] The present invention relates to the technical field of grating structure preparation, and in particular to a method for preparing an electronic device based on a gold nano-sawtooth grating structure, an electronic device and a sensor chip. Background Art

[0002] Striped nanograting structures are widely used as filters and polarizers because their surface plasmons can only be excited by transverse magnetic (TM) polarized light. In the fields of optical switching and multiplexed imaging, polarization-selective multiplexing of spectra is required to achieve the simultaneous transmission of multiple imaging signals along a single communication channel. Among them, gold nanosawtooth gratings have excellent optical properties such as high transmittance, high reflectivity, polarization selectivity, and surface plasmon resonance, which makes them have broad application prospects in optical sensing, optoelectronic devices, and biomedical imaging. There are various methods for preparing gold nanosawtooth grating structures, generally using electron beam lithography and focused ion beam to achieve customized designs with asymmetric structures and nanometer-level resolution. However, electron beam lithography and focused ion beam lithography methods are inefficient and costly, which is not conducive to the mass production of electronic devices based on gold nanosawtooth grating structures.

[0003] It can be seen that how to improve the preparation efficiency of electronic devices based on gold nano-sawtooth grating structures and reduce the preparation cost at the same time has become a technical problem that needs to be urgently solved by those skilled in the art. Summary of the Invention

[0004] The present invention provides a method for preparing an electronic device based on a gold nano-sawtooth grating structure, an electronic device and a sensor chip to solve the technical problem of how to improve the preparation efficiency of electronic devices based on a gold nano-sawtooth grating structure and reduce the preparation cost at the same time, thereby achieving the effect of improving the preparation efficiency of the gold nano-sawtooth grating and reducing the preparation cost.

[0005] In a first aspect, the present invention provides a method for preparing an electronic device based on a gold nano-sawtooth grating structure, the method comprising:

[0006] coating organic glass and photoresist on a glass substrate in sequence to form an organic glass layer and a photoresist layer on the glass substrate;

[0007] Imprinting the photoresist layer using an imprint soft film having nanopores to form a nano-square array structure on the glass substrate;

[0008] Using plasma to etch the residual layer of the photoresist layer and the organic glass layer between the nano-square array structures to form a structure to be thermally evaporated at an angle on the glass substrate;

[0009] Using angle thermal evaporation technology to perform thermal evaporation treatment on the structure to be thermally evaporated at a specific incident angle, so as to form a chromium / gold composite thin film coating on the structure to be thermally evaporated at a specific incident angle;

[0010] peeling off the organic glass layer and the photoresist layer on the glass substrate to obtain an asymmetric gold nanopore array structure;

[0011] Ultrasonic oscillation is used to peel off the selected connecting lines in the asymmetric gold nanohole array structure to obtain an electronic device based on the gold nano-sawtooth grating structure.

[0012] Preferably, the nanopores of the embossed soft film have a width range of [224, 336], a center spacing range of [424, 636], and a depth range of [400, 600].

[0013] Preferably, the calculation formula for the specific incident angle is:

[0014]

[0015] Wherein, d1=Pa, P represents the center-to-center spacing of the nanopores, a represents the width of the nanopores, h represents the height of the nanosquare array structure after etching away the residual layer of the photoresist layer and the organic glass layer, and W represents the minimum line width of the asymmetric gold nanopore array structure.

[0016] Preferably, the range of the specific incident angle is [22°, 27°].

[0017] Preferably, the plasma is oxygen plasma, and the flow rate of the oxygen plasma is 20 sccm, the pressure is 20 mTorr, and the radio frequency power is 100 W.

[0018] Preferably, the thickness of the chromium thin film coating of the chromium / gold composite thin film coating is 2 nm, and the thickness of the gold thin film coating is 20 nm.

[0019] Preferably, the minimum line width of the asymmetric gold nanohole array structure is less than 50 nm, and the other line widths of the asymmetric gold nanohole array structure are greater than 200 nm.

[0020] Preferably, the power range of the ultrasonic oscillation is 50W-100W, and the time of the ultrasonic oscillation is 60s-120s.

[0021] In a second aspect, the present invention further provides an electronic device based on a gold nano-sawtooth grating, wherein the electronic device is prepared using the above-mentioned preparation method.

[0022] In a third aspect, the present invention also provides a gold nano-sawtooth grating sensor chip, which includes the electronic device described above or is prepared using the preparation method described above.

[0023] The present invention provides a method for preparing an electronic device based on a gold nano-sawtooth grating structure, an electronic device, and a sensor chip. Compared with the prior art, the embodiments of the present invention have the following beneficial effects:

[0024] By combining nanoimprinting technology and angled thermal evaporation technology, asymmetric electronic devices based on gold nanosawtooth grating array structures were prepared from traditional inexpensive symmetrical nanocolumn master molds. This has the advantages of low cost and high throughput, and can prepare large-area gold nanosawtooth grating structures with high uniformity, realizing the mass production of electronic devices based on gold nanosawtooth grating structures. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 This is a schematic diagram of the steps of a method for preparing an electronic device based on a gold nano-sawtooth grating structure provided by a preferred embodiment of the present invention;

[0026] Figure 2 A preferred embodiment of the present invention provides a process for preparing an electronic device based on a gold nano-sawtooth grating structure;

[0027] Figure 3 1 is a schematic diagram of a method for calculating a specific incident angle provided by a preferred embodiment of the present invention;

[0028] Figure 4 is a micrograph of an asymmetric gold nanopore array structure provided by a preferred embodiment of the present invention;

[0029] Figure 5 This is a micrograph of an electronic device based on a gold nano-sawtooth grating structure provided by a preferred embodiment of the present invention;

[0030] Figure 6 The normalized extinction spectra of an electronic device based on a gold nano-sawtooth grating structure under different polarizations provided by a preferred embodiment of the present invention are as follows;

[0031] Figure 7 It is the simulated electromagnetic field intensity of an electronic device based on a gold nano-sawtooth grating structure under different polarizations provided by a preferred embodiment of the present invention;

[0032] Figure 8 The extinction spectra of the gold nano-sawtooth grating sensor chip provided by a preferred embodiment of the present invention for substances with different effective refractive indices are as follows;

[0033] Figure 9 The sensing sensitivity of the gold nano-sawtooth grating sensor chip provided by a preferred embodiment of the present invention is:

[0034] Figure 10This is a microscopic image of exosome nanoparticles provided by a preferred embodiment of the present invention. DETAILED DESCRIPTION

[0035] The following is a detailed explanation of the embodiments of the present invention in conjunction with the accompanying drawings. The embodiments are provided for illustrative purposes only and cannot be understood as limitations on the present invention. The accompanying drawings are for reference and illustration purposes only and do not constitute a limitation on the scope of protection of the present invention. Based on the embodiments in the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention. In the description of the present invention, the terms "first", "second", "third", etc. are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first", "second", "third", etc. may explicitly or implicitly include one or more of the features. In the description of the present invention, unless otherwise specified, the meaning of "multiple" is two or more.

[0036] In the description of the present invention, it should be noted that, unless otherwise expressly specified and limited, the terms "installed", "connected" and "connected" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or an indirect connection through an intermediate medium, or it can be a communication between the two components. The terms "vertical", "horizontal", "left", "right", "up", "down" and similar expressions used herein are for illustrative purposes only, and do not indicate or imply that the device or component referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention. The term "and / or" used herein includes any and all combinations of one or more related listed items. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0037] In describing the present invention, it should be noted that, unless otherwise defined, all technical and scientific terms used herein have the same meanings as those commonly understood by those skilled in the art. The terms used in the specification of the present invention are only for the purpose of describing specific embodiments and are not intended to limit the present invention. Those skilled in the art will understand the specific meanings of the above terms in the present invention in specific circumstances.

[0038] Nanoimprint lithography is a low-cost, high-throughput technology ideally suited for fabricating large-area nanoarray structures with high uniformity. However, limitations of nanoimprint lithography lie in the high cost of master molds and the unadjustable resonant wavelength of the plasmonic nanoarray structures fabricated using these master molds. In an embodiment of the present invention, nanoimprint lithography is combined with angled thermal evaporation to fabricate asymmetric gold nanosawtooth grating arrays using conventional, inexpensive, symmetrical nanopillar master molds.

[0039] In view of this, in an embodiment of the present invention, a method for preparing an electronic device based on a gold nano-sawtooth grating structure is provided. Figure 1 , the method comprising:

[0040] S1. Coating organic glass and photoresist on a glass substrate in sequence to form an organic glass layer and a photoresist layer on the glass substrate.

[0041] S2. Using an imprinting soft film with nanopores to imprint the photoresist layer, so as to form a nano-square array structure on the glass substrate.

[0042] S3, using plasma to etch the residual layer of the photoresist layer and the organic glass layer between the nano-square array structures to form a structure to be thermally evaporated at an angle on the glass substrate.

[0043] S4. Using angle thermal evaporation technology to perform thermal evaporation treatment at a specific incident angle on the structure to be thermally evaporated at an angle, so as to form a chromium / gold composite thin film coating on the structure to be thermally evaporated at an angle.

[0044] S5. Peeling off the organic glass layer and the photoresist layer on the glass substrate to obtain an asymmetric gold nanopore array structure.

[0045] S6. Using ultrasonic oscillation to peel off the selected connecting wires in the asymmetric gold nanohole array structure to obtain an electronic device based on the gold nano-sawtooth grating structure.

[0046] like Figure 2The present invention is shown in the following example, which illustrates the preparation process of an electronic device based on a gold nano-zigzag grating structure disclosed in an embodiment of the present invention. A certain thickness of organic glass and TU-7 photoresist are sequentially coated on a glass substrate. The organic glass is used to perform adhesive stripping in a subsequent preparation process, allowing the TU-7 photoresist layer to be quickly and easily removed. Therefore, for the selection of specific types of organic glass, this application prefers PMMA (polymethyl methacrylate), which has high transparency, good chemical stability, and is easy to machine. The organic glass layer is formed from PMMA, and the TU-7 photoresist forms a photoresist layer. The total height of the organic glass layer and the photoresist layer is greater than or equal to 500 nm, in order to meet the requirement that an imprinted soft film with nanopores be used to imprint the photoresist in subsequent steps.

[0047] Further, such as Figure 2 As shown in Figure (b), an imprinted soft film with nanopores is used to imprint the photoresist layer to form a nanocube array structure on a glass substrate. The nanopores in the imprinted soft film have a width range of [224nm, 336nm], a center-to-center spacing range of [424nm, 636nm], and a depth range of [400nm, 600nm]. In a preferred embodiment of the present application, an imprinted soft film with nanopores of 280nm width, 530nm center-to-center spacing, and 500nm depth is used to imprint the photoresist layer formed by TU-7 photoresist, forming a large-area nanocube array structure on the glass substrate.

[0048] The imprinting process is only to imprint the photoresist layer, and its depth does not reach the organic glass layer. Figure 2 As shown in (c), plasma is used to etch the residual layer of the photoresist layer and the organic glass layer between the nano-square array structures to form a structure to be evaporated on the glass substrate. The plasma is oxygen plasma with a flow rate of 20 sccm, a pressure of 20 mTorr, and a radio frequency power of 100 W. Specifically, oxygen plasma gas with a flow rate of 20 sccm, a pressure of 20 mTorr, and a radio frequency power of 100 W is used to etch the residual layer of the TU-7 photoresist layer and the organic glass layer of the PMMA film between the nano-square array structures to form a structure to be evaporated on the glass substrate. Figure 2 (c) The angled thermal evaporation structure shown.

[0049] Further, such as Figure 2 As shown in Figure (d), angled thermal evaporation is performed on the structure to be thermally evaporated at a specific incident angle using angled thermal evaporation technology to form a chromium / gold composite thin film coating on the structure to be thermally evaporated. The thickness of the chromium film coating is 2 nm, and the thickness of the gold film coating is 20 nm. The Cr and Au films are not deposited on the bottom layer blocked by the nanocube array structure.

[0050] In the preferred embodiment of the present application, the selection of a specific incident angle of thermal evaporation is the key to the formation of the gold nano-sawtooth grating structure. If the angle is too large or too small, the evaporation pattern will be different. Figure 3 The figure shows a schematic diagram of the specific incident angle calculation method. The calculation formula of the specific incident angle obtained through analysis is:

[0051]

[0052] d1=Pa

[0053] Wherein, d1=Pa, P represents the center-to-center spacing of the nanopores, a represents the width of the nanopores, h represents the height of the nanosquare array structure after etching away the residual layer of the photoresist layer and the organic glass layer, and W represents the minimum line width of the asymmetric gold nanopore array structure.

[0054] In a preferred embodiment of the present application, the minimum line width of the gold nanohole array is less than 50 nm, and the calculated range of specific incident angles is [22°, 27°], where the optimal incident angle is 22° and the maximum incident angle cannot exceed 27°.

[0055] Further, such as Figure 2 As shown in (e), the organic glass layer and the photoresist layer on the organic glass are peeled off to obtain a gold nanopore array structure, as shown in FIG. Figure 4 The micrograph of the asymmetric gold nanopore array structure is shown. The minimum line width of the gold nanopore array structure is less than 50nm, and the other line widths of the gold nanopore array structure are greater than 200nm. Figure 4 It can be clearly seen in the figure that under the action of angular thermal evaporation at a specific incident angle, the gold nanohole array structure exhibits asymmetric characteristics and the connections are asymmetric, with a minimum line width of less than 50nm. This minimum line width connection can be easily removed by controlling the power and time of ultrasonic oscillation without affecting the jagged nanograting structure.

[0056] Further, such as Figure 2 As shown in (f), ultrasonic oscillation is used to peel off the selected connecting lines in the asymmetric gold nanohole array structure, and the selected connecting lines are the connecting lines with the minimum line width, thereby obtaining an electronic device based on a gold nano-sawtooth grating structure. Because the minimum line width of the asymmetric gold nanohole array structure is less than 50nm, ultrasonic vibration is required for peeling to connect the various gold nanoholes of the asymmetric gold nanohole array structure. Therefore, the power of the ultrasonic vibration should be able to peel off the minimum line width, but it is impossible to peel off other grating array connecting lines with a line width greater than 200 nanometers. In a preferred embodiment of the present application, the power range of the ultrasonic oscillation is 50W-100W, and the time of the ultrasonic oscillation is controlled within 60s-120s to peel off the selected connecting lines in the asymmetric gold nanohole array structure, thereby completing the preparation of the electronic device based on the gold nano-sawtooth grating structure, as shown in FIG. Figure 2(f) shows the fabricated gold nano-sawtooth grating structure. Figure 5 Shown is a micrograph of an electronic device based on a gold nano-zigzag grating structure.

[0057] In a preferred embodiment of the present invention, organic glass and photoresist are sequentially coated on a glass substrate to form an organic glass layer and a photoresist layer on the glass substrate; an embossed soft film having nanopores is used to emboss the photoresist layer to form a nanoblock array structure on the glass substrate; plasma etching is used to etch the residual layer of the photoresist layer and the organic glass layer between the nanoblock array structures to form a structure to be thermally evaporated at an angle on the glass substrate; the structure to be thermally evaporated at an angle is subjected to thermal evaporation treatment at a specific incident angle using an angle thermal evaporation technique to form a chromium / gold composite thin film coating on the structure to be thermally evaporated at an angle; the organic glass layer and the photoresist layer on the glass substrate are peeled off to obtain an asymmetric gold nanopore array structure; and ultrasonic oscillation is used to peel off selected connecting wires in the asymmetric gold nanopore array structure to obtain an electronic device based on a gold nano-sawtooth grating structure. The method for preparing electronic devices based on a gold nano-sawtooth grating structure provided in the present application combines nanoimprinting technology with angled thermal evaporation technology to prepare asymmetric electronic devices based on a gold nano-sawtooth grating array structure from a traditional inexpensive symmetrical nano-column master mold, giving full play to the low-cost and high-throughput advantages of nanoimprinting technology, and being able to prepare a large-area gold nano-sawtooth grating structure with high uniformity, thereby realizing the mass production of electronic devices based on a gold nano-sawtooth grating structure.

[0058] Correspondingly, based on a method for preparing an electronic device based on a gold nano-sawtooth grating structure, an embodiment of the present invention also provides a gold nano-sawtooth grating structure, and the gold nano-sawtooth grating structure is obtained using the method for preparing an electronic device based on a gold nano-sawtooth grating structure disclosed in an embodiment of the present invention.

[0059] The grating width of the prepared electronic device based on the gold nano-sawtooth grating structure is 160nm, the spacing is 600nm, the angle of the tip of the gold nano-sawtooth grating structure is 120 degrees, and the maximum line width is 280nm.

[0060] Because the electric vector of transversely electrically (TE) polarized light is parallel to the striped grating, the surface plasmon polaritons of conventional symmetrical striped nanograting structures cannot be excited by incident light with transverse electric (TE) polarization. Using the method disclosed in this application to prepare electronic devices based on gold nanosawtooth grating structures, the electronic devices based on gold nanosawtooth grating structures can induce surface charges on the gold nanosawtooth gratings by providing electric vectors perpendicular to the gratings with both TE and TM polarized light.

[0061] like Figure 6The figure shows the normalized extinction spectra of the electronic device based on the gold nano-sawtooth grating structure under different polarization conditions. Two resonance peaks with the electric field direction perpendicular to the gold nano-sawtooth grating are observed at wavelengths of 782nm and 1628nm. When the electric field direction is parallel to the direction of the nano-grating, the traditional symmetrical gold nano-grating will not be able to excite the resonance peak. However, the electronic device based on the gold nano-sawtooth grating structure disclosed in the embodiment of the present invention can generate a resonance peak at 782nm and 1628nm because the sawtooth and the electric field direction have a perpendicular component. Figure 7 The figure shows the simulated electromagnetic field intensity of an electronic device based on a gold nano-sawtooth grating structure under different polarizations. The electromagnetic simulation conditions use periodic boundary conditions in both the x and y directions, and perfectly matched layers are applied at the top and bottom along the z direction to minimize reflection errors. The transmission spectrum is monitored by a frequency domain power monitor placed behind the simulation structure. A 5nm grid size is used in most areas, except for a smaller 2nm grid size around the gold plasma nanostructure. Figure 7 It can be seen that when the direction of the electric field is perpendicular to the direction of the gold nanosawtooth grating structure, the electromagnetic field intensity of the gold nanosawtooth grating structure in the perpendicular direction is significantly higher than that of the gold nanosawtooth grating structure in the parallel direction, and most of the surface plasmons accumulate at the tip of the gold nanosawtooth nanograting structure, and under the joint action of the gold nanograting structure and the sawtooth structure, two resonance peaks of 782 and 1628nm are stimulated.

[0062] Accordingly, based on an electronic device based on a gold nano-sawtooth grating structure, an embodiment of the present invention further provides a gold nano-sawtooth grating sensor chip, which includes the electronic device based on a gold nano-sawtooth grating structure disclosed in an embodiment of the present invention or is prepared using the preparation method disclosed in an embodiment of the present invention. The gold nano-sawtooth grating sensor chip is used for concentration detection of an object, such as Figure 8 The figure shows the extinction spectra of the gold nano-sawtooth grating sensor chip for materials with different effective refractive indexes. Figure 8 It can be seen that based on the sensing principle of localized plasmon resonance, the resonance peak of the electronic device based on the gold nanosawtooth grating structure will shift with the increase of the effective refractive index of the material on the surface of the gold nanosawtooth grating structure, thereby detecting the concentration of the analyte on the surface of the gold nanosawtooth grating structure.

[0063] Among them, the resonance peak wavelength of the gold nano-sawtooth grating sensor chip and the effective refractive factor of the surface to be measured have the following relationship:

[0064]

[0065] Among them, λ max Represents the resonance peak wavelength, λ p Indicates the plasma frequency of metal materials, nm is the effective refractive index of the object to be measured.

[0066] Figure 9 The figure shows the sensing sensitivity of the gold nano-sawtooth grating sensor chip. Figure 9 It can be seen that when the effective refractive index of the substance to be measured increases from 1 to 1.404, all resonance peaks shift to the right, showing better sensing characteristics.

[0067] In addition, the size of the gold nano-zigzag grating structure is similar to that of the exosome particles, e.g. Figure 10 The figure shows a microscopic image of exosome nanoparticles. Therefore, the gold nano-sawtooth grating sensor chip disclosed in this application can be used for sensing and detecting nanoscale biomolecules and exosome concentrations.

[0068] The present embodiment provides a method for preparing an electronic device based on a gold nano-sawtooth grating structure, a device, and a sensor chip, which are used to solve the technical problem of how to improve the preparation efficiency of electronic devices based on a gold nano-sawtooth grating structure while reducing the preparation cost. Organic glass and photoresist are sequentially coated on a glass substrate to form an organic glass layer and a photoresist layer on the glass substrate; an imprinted soft film having nanopores is used to imprint the photoresist layer to form a nano-block array structure on the glass substrate; a residual layer of the photoresist layer and the organic glass layer between the nano-block array structures are etched using plasma to form a structure to be thermally evaporated at an angle on the glass substrate; an angle thermal evaporation technique is used to perform thermal evaporation treatment on the structure to be thermally evaporated at a specific incident angle to form a chromium / gold composite thin film coating on the structure to be thermally evaporated at an angle; the organic glass layer and photoresist layer on the glass substrate are peeled off to obtain an asymmetric gold nano-hole array structure; and ultrasonic oscillation is used to peel off selected connecting wires in the asymmetric gold nano-hole array structure to obtain an electronic device based on a gold nano-sawtooth grating structure. The method for preparing electronic devices based on gold nano-sawtooth grating structures provided in the present application combines nanoimprinting technology with angled thermal evaporation technology to prepare asymmetric electronic devices based on gold nano-sawtooth grating array structures from traditional inexpensive symmetrical nano-column mother molds. The method has the advantages of low cost and high throughput, and can prepare gold nano-sawtooth grating structures with high uniformity and large areas, thereby realizing mass production of electronic devices based on gold nano-sawtooth grating structures.

[0069] Each embodiment in this specification is described in a progressive manner, and the same or similar parts of each embodiment can be directly referred to each other, and each embodiment focuses on the differences from other embodiments. In particular, for the system embodiment, since it is basically similar to the method embodiment, the description is relatively simple, and the relevant parts can be referred to the partial description of the method embodiment. It should be noted that the various technical features of the above embodiments can be combined arbitrarily. In order to make the description concise, not all possible combinations of the various technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0070] The above-described embodiments merely represent several preferred embodiments of the present invention. While the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the invention. It should be noted that a person skilled in the art could make several improvements and substitutions without departing from the technical principles of the present invention, and such improvements and substitutions should also be considered within the scope of the present invention. Therefore, the scope of the present invention should be determined by the scope of the claims.

Claims

1. A method for preparing an electronic device based on a gold nano-sawtooth grating structure, characterized in that: The method comprises: coating organic glass and photoresist on a glass substrate in sequence to form an organic glass layer and a photoresist layer on the glass substrate; Imprinting the photoresist layer using an imprint soft film having nanopores to form a nano-square array structure on the glass substrate; Using plasma to etch the residual layer of the photoresist layer and the organic glass layer between the nano-square array structures to form a structure to be thermally evaporated at an angle on the glass substrate; Using angle thermal evaporation technology to perform thermal evaporation treatment on the structure to be thermally evaporated at a specific incident angle, so as to form a chromium / gold composite thin film coating on the structure to be thermally evaporated at a specific incident angle; peeling off the organic glass layer and the photoresist layer on the glass substrate to obtain an asymmetric gold nanopore array structure; Ultrasonic oscillation is used to peel off the selected connecting lines in the asymmetric gold nanohole array structure to obtain an electronic device based on the gold nano-sawtooth grating structure.

2. The method for preparing an electronic device based on a gold nano-sawtooth grating structure according to claim 1, wherein: The nanopores of the embossed soft film have a width range of [224, 336], a center spacing range of [424, 636], and a depth range of [400, 600].

3. The method for preparing an electronic device based on a gold nano-sawtooth grating structure according to claim 2, wherein: The calculation formula for the specific incident angle is: Wherein, d1=Pa, P represents the center-to-center spacing of the nanopores, a represents the width of the nanopores, h represents the height of the nanosquare array structure after etching away the residual layer of the photoresist layer and the organic glass layer, and W represents the minimum line width of the asymmetric gold nanopore array structure.

4. The method for preparing an electronic device based on a gold nano-sawtooth grating structure according to claim 3, wherein: The range of the specific incident angle is [22°, 27°].

5. The method for preparing an electronic device based on a gold nano-sawtooth grating structure according to claim 1, wherein: The plasma is oxygen plasma, and the flow rate of the oxygen plasma is 20 sccm, the pressure is 20 mTorr, and the radio frequency power is 100 W.

6. The method for preparing an electronic device based on a gold nano-sawtooth grating structure according to claim 1, wherein: The thickness of the chromium thin film coating of the chromium / gold composite thin film coating is 2 nm, and the thickness of the gold thin film coating is 20 nm.

7. The method for preparing an electronic device based on a gold nano-sawtooth grating structure according to claim 3, wherein: The minimum line width of the asymmetric gold nanopore array structure is less than 50 nm, and the other line widths of the asymmetric gold nanopore array structure are greater than 200 nm.

8. The method for preparing an electronic device based on a gold nano-sawtooth grating structure according to claim 1, wherein: The power range of the ultrasonic oscillation is 50W-100W, and the time of the ultrasonic oscillation is 60s-120s.

9. An electronic device based on gold nano-sawtooth grating, characterized in that: The electronic device is prepared by the preparation method according to any one of claims 1 to 8.

10. A gold nano-sawtooth grating sensor chip, characterized in that: The sensor chip includes the electronic device according to claim 9 or is prepared by the preparation method according to any one of claims 1 to 8.

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