Absorption and transmission integrated radome unit with tunable frequency band under mode reconstruction

Abstract

The invention relates to a frequency band tunable absorption and transmission integrated antenna housing unit under mode reconstruction. The antenna housing unit comprises a wave absorbing layer, a first air layer and a wave transmission layer which are sequentially stacked from top to bottom, a plurality of PIN diodes are arranged on the wave absorbing layer, and a plurality of variable capacitance diodes are arranged on the wave transparent layer; in response to a control signal, the plurality of PIN diodes are reversely biased, and when the capacitance values of the plurality of variable capacitance diodes are adjusted to a first preset range, the working frequency band of the absorption and transmission integrated radome unit structure is in a first frequency band range, and an ATA type wave absorption mode is realized; and in response to the control signal, when the plurality of PIN diodes are positively biased and the capacitance values of the plurality of variable capacitance diodes are adjusted to a second preset range, the working frequency band of the absorption and transmission integrated radome unit structure is in a second frequency band range, and a TA type wave absorption mode is realized. The device can realize switching between an ATA type wave-absorbing mode and a TA type wave-absorbing mode, and the frequency band tunable effect under the ATA type wave-absorbing mode and the TA type wave-absorbing mode.

Description

Technical Field

[0001] The present invention belongs to the technical field of electromagnetic stealth absorbers, and in particular relates to a frequency band-tunable absorbent integrated antenna cover unit under mode reconstruction. Background Art

[0002] With the growing demand for all-round stealth in antenna systems, the frequency selective surface radome (FSR) has gradually attracted widespread attention from the academic community as an innovative solution. At the end of the 20th century, scholars such as Munk from Ohio State University in the United States first proposed the concept of FSR and successfully demonstrated its application in the field of antenna stealth. FSR has full wave-transmitting performance similar to that of traditional frequency selective surface (FSS) radome within the antenna working band, while it exhibits significant wave-absorbing characteristics outside the working band, which can effectively absorb radar waves, thereby significantly reducing the radar cross section (RCS) of the antenna. This feature enables the FSR radome to enhance the all-round stealth capability while reducing the RCS outside the antenna working band. Compared with the traditional FSS radome, the FSR design is simple, does not require additional shaping design, and has higher design flexibility. Although many FSR structures with excellent performance have been proposed in recent years, most of the existing FSR structures only have fixed wave-transmitting bands, which are difficult to meet the needs of multi-band antennas. Summary of the invention

[0003] In order to solve the above problems existing in the prior art, the present invention provides a band-tunable absorption-through integrated antenna cover unit under mode reconstruction. The technical problem to be solved by the present invention is achieved through the following technical solutions:

[0004] The present invention provides an integrated absorption and penetration radome unit with tunable frequency band under mode reconstruction, wherein the integrated absorption and penetration radome unit structure comprises: a plurality of closely arranged radome sub-units; each radome unit comprises: an absorbing layer, a first air layer and a wave-transmitting layer stacked in sequence from top to bottom; a plurality of PIN diodes are arranged on the absorbing layer, a plurality of varactor diodes are arranged on the wave-transmitting layer, and different control signals are connected to the control ends of the plurality of PIN diodes and the control ends of the plurality of varactor diodes; wherein, in response to the control signal, the plurality of PIN diodes are reverse biased, and when the capacitance of the plurality of varactor diodes is adjusted to a first preset range, the operating frequency band of the integrated absorption and penetration radome unit structure is within a first frequency band range, realizing an ATA type absorption mode; in response to the control signal, the plurality of PIN diodes are forward biased, and when the capacitance of the plurality of varactor diodes is adjusted to a second preset range, the operating frequency band of the integrated absorption and penetration radome unit structure is within a second frequency band range, realizing a TA type absorption mode; wherein the value of the first preset range is smaller than the value of the second preset range, and the first frequency band range and the second frequency band range partially overlap.

[0005] In some embodiments, the wave-transmitting layer includes: a first wave-transmitting sub-layer, a second air sub-layer, a second wave-transmitting sub-layer, a third air sub-layer and a third wave-transmitting sub-layer stacked in sequence from top to bottom; wherein the thickness of the first air layer is greater than the thickness of the second air sub-layer, the thickness of the second air sub-layer is equal to the thickness of the third air sub-layer, and the structure of the first wave-transmitting sub-layer is the same as that of the third wave-transmitting sub-layer.

[0006] In some embodiments, the absorbing layer includes: a first dielectric substrate; a hollow metal sheet with a cross structure is provided on the first dielectric substrate, and the four ends of the hollow metal sheet are semicircular; four lumped resistors are evenly arranged at the center of the metal sheet, and a structure consisting of a first sheet structure, a semicircular sheet and a second sheet structure is arranged in the four ends of the hollow metal sheet, wherein one of the PIN diodes is arranged on the semicircular sheet.

[0007] In some embodiments, the length and width of the first dielectric substrate are both in the range of 8 mm to 12 mm, and the thickness is in the range of 0.8 mm to 1.2 mm; the width of each end of the hollow metal sheet is in the range of 1 mm to 2 mm, and the hollow width is in the range of 0.5 mm to 1 mm; the length of each end of the hollow metal sheet is in the range of 2 mm to 3 mm, and the hollow length is in the range of 2 mm to 3 mm; the diameter of the semicircular sheet is in the range of 0.1 mm to 0.2 mm, and the width is in the range of 0.1 mm to 15 mm.

[0008] In some embodiments, the first wave-transmitting sub-layer includes: a second dielectric substrate, and four evenly distributed first rectangular metal sheets arranged on the second dielectric substrate, two adjacent first rectangular metal sheets are connected by two rectangular long metal sheets, and a varactor diode is arranged between the two rectangular long metal sheets.

[0009] In some embodiments, the second wave-transmitting sub-layer includes: a third dielectric substrate, and four second rectangular metal sheets evenly distributed on the third dielectric substrate.

[0010] In some embodiments, the length and width of the second dielectric substrate are both in the range of 8 mm to 12 mm, and the thickness is in the range of 0.1 mm to 0.3 mm; the length and width of the first rectangular metal sheet are both in the range of 1 mm to 5 mm; and the length of the rectangular long metal sheet is in the range of 0.5 mm to 1 mm, and the width is in the range of 0.1 mm to 0.5 mm.

[0011] In some embodiments, the thickness and width of the third dielectric substrate are both in the range of 8 mm to 12 mm, and the thickness is in the range of 0.1 mm to 0.3 mm; the length and width of the second rectangular metal sheet are both in the range of 1 mm to 5 mm.

[0012] In some embodiments, the thickness of the first air layer ranges from 1 mm to 5 mm, and the thickness of the second air sublayer ranges from 0.5 mm to 1 mm.

[0013] In some embodiments, the first preset range is 0.25 pF to 0.4 pF, and the second preset range is 1.8 pF to 3 pF.

[0014] Compared with the prior art, the present invention has the following beneficial effects:

[0015] In view of the problem that most of the existing FSR structures only have a fixed wave transmission frequency band and are difficult to meet the needs of multi-band working antennas, the present invention provides an integrated absorption and penetration antenna cover unit with adjustable frequency band under mode reconstruction. The device is provided with a PIN diode that responds to positive and negative biasing of a control signal in the wave absorbing layer, and a variable capacitance diode with a variable capacitance in the wave transmitting layer. By positive and negative biasing the PIN diode and adjusting the capacitance range of the variable capacitance diode, the corresponding working frequency band is changed, thereby realizing the switching between the ATA type absorption mode and the TA type absorption mode, and the frequency band tunable effect in the ATA type absorption mode and the TA type absorption mode, thereby improving the flexibility of the antenna system, meeting the needs of multi-band communication antennas, and reducing the structural complexity and manufacturing cost of the FSR. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 It is a structural schematic diagram of a frequency band-tunable absorption-through integrated antenna cover unit provided by an embodiment of the present invention under mode reconstruction;

[0017] Figure 2 is a schematic structural diagram of a wave absorbing layer provided in an embodiment of the present invention;

[0018] Figure 3 is a schematic structural diagram of a first wave-transmitting sub-layer in a wave-transmitting layer provided in an embodiment of the present invention;

[0019] Figure 4 is a schematic structural diagram of a second wave-transmitting sub-layer in a wave-transmitting layer provided in an embodiment of the present invention;

[0020] Figure 5 It is a simulation result diagram of the S parameter of the integrated absorption and penetration antenna cover unit with tunable frequency band following the frequency change of electromagnetic waves under mode reconstruction provided by an embodiment of the present invention in the ATA type absorption mode;

[0021] Figure 6 It is a simulation result diagram of the change of the absorption rate of the integrated absorption and penetration antenna cover unit with tunable frequency band following the frequency of electromagnetic waves under mode reconstruction provided by an embodiment of the present invention in the ATA type absorption mode;

[0022] Figure 7 It is a simulation result diagram of the S parameter of the integrated absorption and penetration antenna cover unit with tunable frequency band following the frequency change of electromagnetic waves under mode reconstruction provided by an embodiment of the present invention in the TA type absorption mode;

[0023] Figure 8 It is a simulation result diagram of the absorption rate of the integrated absorption and penetration antenna cover unit with tunable frequency band following the frequency change of electromagnetic waves under mode reconstruction in the TA type absorption mode provided by an embodiment of the present invention.

[0024] Reference numerals:

[0025] 1. Wave absorbing layer; 2. Wave transmitting layer; 11. First dielectric substrate; 12. Hollow metal sheet; 13. Lumped resistor; 14. PIN diode; 21. First wave transmitting sub-layer; 22. Second wave transmitting sub-layer; 23. Third wave transmitting sub-layer; 211. Second dielectric substrate; 212. First rectangular metal sheet; 213. Rectangular long metal sheet; 214. Varactor diode; 221. Third dielectric substrate; 222. Second rectangular metal sheet. DETAILED DESCRIPTION

[0026] The present invention is further described in detail below with reference to specific embodiments, but the embodiments of the present invention are not limited thereto.

[0027] In the description of the present invention, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0028] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine different embodiments or examples described in this specification.

[0029] Although the present invention is described herein in conjunction with various embodiments, in the process of implementing the claimed invention, those skilled in the art may understand and implement other variations of the disclosed embodiments by viewing the drawings, the disclosure, and the appended claims. In the claims, the word "comprising" does not exclude other components or steps, and "one" or "an" does not exclude multiple situations. A single processor or other unit may implement several functions listed in the claims. Certain measures are recorded in different dependent claims, but this does not mean that these measures cannot be combined to produce good results.

[0030] Now, in conjunction with the accompanying drawings, the frequency band-tunable absorption-through integrated antenna cover unit provided by the present invention under mode reconstruction is described in detail. Figure 1 1 is a schematic diagram of the structure of the frequency band tunable absorption and penetration integrated antenna cover unit provided by the embodiment of the present invention under mode reconstruction. Figure 1As shown, the absorption-penetration integrated antenna cover unit structure comprises: a plurality of closely arranged antenna cover units; each antenna cover unit comprises: an absorbing layer 1, a first air layer and a wave-transmitting layer 2 stacked in sequence from top to bottom; a plurality of PIN diodes 14 are arranged on the absorbing layer 1, and a plurality of varactor diodes 214 are arranged on the wave-transmitting layer 2, and the control ends of the plurality of PIN diodes 14 and the control ends of the plurality of varactor diodes 214 are connected to different control signals; wherein, in response to the control signal, the plurality of PIN diodes 14 are reverse biased, and the capacitance of the plurality of varactor diodes 214 is adjusted to a first preset range, the operating frequency band of the absorption-penetration integrated antenna cover unit structure is in a first frequency band range, and an ATA type absorption mode is realized; in response to the control signal, the plurality of PIN diodes 14 are forward biased, and the capacitance of the plurality of varactor diodes 214 is adjusted to a second preset range, the operating frequency band of the absorption-penetration integrated antenna cover unit structure is in a second frequency band range, and a TA type absorption mode is realized; wherein, the value of the first preset range is smaller than the value of the second preset range, and the first frequency band range and the second frequency band range partially overlap.

[0031] Here, the control signal connected to the control end of the plurality of PIN diodes 14 is different from the control signal connected to the control end of the plurality of varactor diodes 214. The control signal connected to the control end of the PIN diode 14 is used to control the forward bias and reverse bias of the PIN diode 14; the control signal connected to the control end of the plurality of varactor diodes 214 is used to adjust the capacitance value of the varactor diode 215.

[0032] Here, the ATA type wave absorption mode can be understood as a working mode of transmitting waves in the middle and absorbing waves on both sides. In the ATA type wave absorption mode, the first preset range is 0.25pF to 0.4pF. The TA type wave absorption mode can be understood as a low-transmittance and high-absorption working mode. In the TA type wave absorption mode, the second preset range is 1.8pF to 3pF.

[0033] Figure 2 Schematic diagram of the structure of the wave absorbing layer provided in the embodiment of the present invention. Figure 2 As shown, the absorbing layer 1 includes: a first dielectric substrate 11; a hollow metal sheet 12 with a cross structure is arranged on the first dielectric substrate 11, and the four ends of the hollow metal sheet 12 are semicircular; four lumped resistors 13 are evenly arranged at the center of the metal sheet, and a structure consisting of a first sheet structure, a semicircular sheet and a second sheet structure is arranged in the four ends of the hollow metal sheet 12, wherein a PIN diode 14 is arranged on the semicircular sheet.

[0034] Here, the length and width of the first dielectric substrate are both in the range of 8mm to 12mm, and the thickness is in the range of 0.8mm to 1.2mm; the width of each end of the hollow metal sheet is in the range of 1mm to 2mm, the hollow width is in the range of 0.5mm to 1mm, the length of each end of the hollow metal sheet is in the range of 2mm to 3mm, and the hollow length is in the range of 2mm to 3mm; the diameter of the semicircular sheet is in the range of 0.1mm to 0.2mm, and the width is in the range of 0.1mm to 15mm. Preferably, the length and width of the first dielectric substrate are both 10 mm, and the thickness is 1 mm; the width l1 of each end of the hollow metal sheet is 1.32 mm, the hollow width l2 is 0.86 mm, the length l3 of each end of the hollow metal sheet is 2.76 mm, and the hollow length is 2.61 mm; the semicircular part of each end has a corresponding width w2 of 0.08 mm, the diameter d1 of the semicircular sheet is 0.15 mm, and the width w3 is 0.11 mm.

[0035] Here, the axes of the four PIN diodes 14 are perpendicular to each other and are arranged obliquely to the hollow metal sheet 12. When the PIN diode 14 is in a forward biased state, the PIN diode 14 is equivalent to a resistor with a resistance of 1.5Ω; when the PIN diode 14 is in a reverse biased state, the PIN diode 14 is equivalent to a capacitor with a capacitance of 0.1pF. In addition, the resistance of each lumped resistor 13 is 25.4Ω.

[0036] Please continue to refer to Figure 1 The wave-transmitting layer 2 includes: a first wave-transmitting sub-layer 21, a second air sub-layer, a second wave-transmitting sub-layer 22, a third air sub-layer and a third wave-transmitting sub-layer 23 stacked in sequence from top to bottom; wherein the thickness of the first air layer is greater than the thickness of the second air sub-layer, the thickness of the second air sub-layer is equal to the thickness of the third air sub-layer, and the structure of the first wave-transmitting sub-layer 21 is the same as the structure of the third wave-transmitting sub-layer 23. For the sake of brevity, the structure of the third wave-transmitting sub-layer 23 is not described in detail here.

[0037] Here, the thickness of the first air layer ranges from 1 mm to 5 mm, and the thickness of the second air sublayer ranges from 0.5 mm to 1 mm. Preferably, the thickness t1 of the first air layer is 3.94 mm, and the thickness t2 of the second air sublayer is 0.84 mm.

[0038] Figure 3 FIG. 1 is a schematic diagram of the structure of the first wave-transmitting sub-layer in the wave-transmitting layer provided in an embodiment of the present invention. Figure 3As shown, the first wave-transmitting sublayer 21 includes: a second dielectric substrate 211, and four uniformly distributed first rectangular metal sheets 212 arranged on the second dielectric substrate 211, two adjacent first rectangular metal sheets 212 are connected by two rectangular long metal sheets 213, and a varactor diode 214 is arranged between the two rectangular long metal sheets 213. Exemplarily, the second dielectric substrate 211 is divided into four equal parts to obtain four small units, and a first rectangular metal sheet 212 is arranged at the center of a small unit, and the side line of the first rectangular metal sheet 212 is parallel to the side line of the second dielectric substrate 211; the four rectangular long metal sheets 213 are respectively arranged at the middle position of each side line of the first rectangular metal sheet 212, and a 1 / 2 varactor diode 214 is arranged at one end of each rectangular long metal sheet 213 away from the first rectangular metal sheet 212.

[0039] Here, the length and width of the second dielectric substrate are both in the range of 8mm to 12mm, and the thickness is in the range of 0.1mm to 0.3mm; the length and width of the first rectangular metal sheet are both in the range of 1mm to 5mm; and the length of the rectangular strip metal sheet is in the range of 0.5mm to 1mm, and the width is in the range of 0.1mm to 0.5mm. Preferably, the length and width of the second dielectric substrate are both 10mm, and the thickness is 0.23mm; the length and width of the first rectangular metal sheet 212 are both 3mm; and the length of the rectangular strip metal sheet 213 is 0.81mm, and the width is 0.38mm.

[0040] Figure 4 FIG. 1 is a schematic diagram of the structure of the second wave-transmitting sub-layer in the wave-transmitting layer provided in an embodiment of the present invention. Figure 4 As shown, the second wave-transmitting sublayer 22 includes: a third dielectric substrate 221, and four uniformly distributed second rectangular metal sheets 222 on the third dielectric substrate 221. Exemplarily, the third dielectric substrate 221 is divided into four equal parts to obtain four small units, and a second rectangular metal sheet 222 is arranged at the center of a small unit. The sideline of the second rectangular metal sheet 222 is parallel to the sideline of the third dielectric substrate 221.

[0041] Here, the thickness and width of the third dielectric substrate are both in the range of 8 mm to 12 mm, and the thickness is in the range of 0.1 mm to 0.3 mm; the length and width of the second rectangular metal sheet are both in the range of 1 mm to 5 mm. Preferably, the thickness and width of the third dielectric substrate 221 are both 10 mm, and the thickness is 0.23 mm; the length and width of the second rectangular metal sheet 222 are both 3 mm.

[0042] It should be noted that in the band-tunable absorption and penetration integrated antenna cover unit under mode reconstruction provided by the present invention, the structure of each layer is symmetrically arranged. This arrangement makes the wave absorption and transmission characteristics of the absorption and penetration integrated antenna cover unit structure provided by the present invention not change with the change of polarization mode, and has polarization insensitivity characteristics. In addition, based on the above-mentioned size description, it can be seen that the structural size of the present invention is relatively small, and the absorption and penetration integrated antenna cover unit structure only involves a dielectric substrate, a metal patch, a patch resistor, a PIN diode and a varactor diode. Compared with the existing FSR, the structure is simpler and the manufacturing cost is lower.

[0043] The above is a detailed description of the integrated absorption and penetration antenna cover unit with tunable frequency band under mode reconstruction provided by the present invention. In a possible implementation method, the operating frequency band of the integrated absorption and penetration antenna cover unit structure includes: a wave-transmitting frequency band and a wave-absorbing frequency band; wherein, in the ATA type wave-absorbing mode, the first frequency band range of the wave-transmitting frequency band is 9.3GHz to 13GHz, and the first frequency band range of the wave-absorbing frequency band is 5.5GHz to 9.3GHz and 13GHz to 17.33GHz; in the TA type wave-absorbing mode, the second frequency band range of the wave-transmitting frequency band is 4.3GHz to 6.45GHz, and the second frequency band range of the wave-absorbing frequency band is 6.5GHz to 15.8GHz.

[0044] In order to verify the tunability of the band-tunable integrated absorbing and penetrating radome unit under mode reconstruction in the ATA absorbing mode and the TA absorbing mode, a model of the band-tunable integrated absorbing and penetrating radome unit under mode reconstruction was established using simulation software, and the model was simulated.

[0045] Figure 5 1 is a simulation result diagram of the S parameters of the integrated absorption antenna cover unit with tunable frequency band following the frequency change of electromagnetic waves under mode reconstruction provided by an embodiment of the present invention in the ATA type absorption mode. Figure 5As shown, in the ATA type wave absorption mode, the black dotted line is used to represent the change of the corresponding S11 parameter when the varactor diode in the wave transmission layer is 0.25pF, the red solid line is used to represent the change of the corresponding S21 parameter when the varactor diode in the wave transmission layer is 0.25pF, the blue dotted line represents the change of the corresponding S11 parameter when the varactor diode in the wave transmission layer is 0.4pF, and the green solid line represents the change of the corresponding S21 parameter when the varactor diode in the wave transmission layer is 0.4pF. It can be seen that the wave transmission band of the device is tunable in the range of 9.3GHz-13GHz. In the ATA type wave absorption mode, the capacitance of the varactor diode varies in the range of 0.25pF-0.4pF. When the capacitance of the varactor diode is 0.25pF, the device can transmit waves at 9.3GHz-11.5GHz; when the capacitance of the varactor diode is 0.4pF, the device can transmit waves at 10.3GHz-13GHz. This indicates that both the wave absorbing band and the wave transmitting band of the device can be tuned with the capacitance of the variable capacitance diode of the wave transmitting layer.

[0046] Figure 6 1 is a simulation result diagram of the wave absorption rate of the integrated absorption and penetration antenna cover unit with tunable frequency band following the frequency change of electromagnetic waves under the ATA type wave absorption mode provided by an embodiment of the present invention. Figure 6 As shown in the figure, when the PIN diode in the wave absorbing layer is reverse biased, the capacitance of the varactor in the wave transmitting layer changes in the range of 0.25pF-0.4pF, and the wave absorbing band of the device is tunable in the range of 5.5GHz-9.3GHz and 13GHz-17.3GHz. In addition, when the capacitance of the varactor is 0.25pF, the device can absorb waves in the range of 5.5GHz-9.3GHz and 14GHz-17.3GHz; when the capacitance of the varactor is 0.4pF, the device can absorb waves in the range of 5.5GHz-8.8GHz and 13GHz-15.5GHz.

[0047] Figure 7 1 is a simulation result diagram of the S parameter of the integrated absorption antenna cover unit with tunable frequency band following the frequency change of electromagnetic waves under the TA type absorption mode provided by the embodiment of the present invention. Figure 7 As shown, in the TA type wave absorption mode, the capacitance of the varactor changes in the range of 1.8pF-3pF, and the wave transmission band is tunable in the range of 4.3GHz-6.45GHz. When the capacitance of the varactor 214 is 3pF, it can transmit waves in the range of 4.3GHz-5.2GHz; when the capacitance of the varactor 214 is 2.4pF, it can transmit waves in the range of 4.7GHz-5.7GHz; when the capacitance of the varactor 214 is 1.8pF, it can transmit waves in the range of 5.45GHz-6.45GHz. This shows that in the TA type wave absorption mode, the wave absorption band and the wave transmission band of the device can be tuned with the capacitance of the varactor of the wave transmission layer.

[0048] Figure 8 1 is a simulation result diagram of the absorption rate of the integrated absorption and penetration antenna cover unit with tunable frequency band following the frequency change of electromagnetic waves under the TA type absorption mode provided by the embodiment of the present invention. Figure 8 As shown, when the PIN diode in the wave absorbing layer is forward biased, the capacitance of the varactor in the wave transmitting layer varies in the range of 1.8pF-3pF, and the wave absorbing band of the device is tunable in the range of 6.5GHz-15.8GHz. When the capacitance of the varactor 214 is 3pF, it can absorb waves in the range of 6.5GHz-14.3GHz; when the capacitance of the varactor 214 is 2.4pF, it can absorb waves in the range of 6.8GHz-15.8GHz; when the capacitance of the varactor 214 is 1.8pF, it can absorb waves in the range of 7.3GHz-13.3GHz.

[0049] based on Figures 5 to 8 It can be seen that the present invention can switch between the two absorption modes of ATA and TA, with a passband insertion loss of 0-3dB and an absorption effect of more than 80%; and in the ATA mode, it can achieve 1GHz passband tuning, especially in 5.5-9.3GHz and 13-17.3GHz, with good absorption characteristics and an absorption rate of more than 80%. In the TA mode, it can achieve 1.15GHz passband tuning, especially in 6.5-15.8GHz, with good absorption characteristics and an absorption rate of more than 80%.

[0050] In view of the problem that most of the existing FSR structures only have a fixed wave transmission frequency band and are difficult to meet the needs of multi-band working antennas, the present invention provides an integrated absorption and penetration antenna cover unit with adjustable frequency band under mode reconstruction. The device is provided with a PIN diode that responds to positive and negative biasing of a control signal in the wave absorbing layer, and a variable capacitance diode with a variable capacitance in the wave transmitting layer. By positive and negative biasing the PIN diode and adjusting the capacitance range of the variable capacitance diode, the corresponding working frequency band is changed, thereby realizing the switching between the ATA type absorption mode and the TA type absorption mode, and the frequency band tunable effect in the ATA type absorption mode and the TA type absorption mode, thereby improving the flexibility of the antenna system, meeting the needs of multi-band communication antennas, and reducing the structural complexity and manufacturing cost of the FSR.

[0051] The above contents are further detailed descriptions of the present invention in combination with specific preferred embodiments, and it cannot be determined that the specific implementation of the present invention is limited to these descriptions. For ordinary technicians in the technical field to which the present invention belongs, several simple deductions or substitutions can be made without departing from the concept of the present invention, which should be regarded as falling within the protection scope of the present invention.

Claims

1. A band-tunable integrated antenna cover unit with mode reconstruction, characterized in that: The integrated absorption and penetration radome unit structure comprises: a plurality of closely arranged radome units; each radome unit comprises: an absorbing layer, a first air layer and a wave-transmitting layer stacked in sequence from top to bottom; a plurality of PIN diodes are arranged on the absorbing layer, a plurality of variable capacitance diodes are arranged on the wave-transmitting layer, and control ends of the plurality of PIN diodes and control ends of the plurality of variable capacitance diodes are connected to different control signals; Wherein, in response to the control signal, the plurality of PIN diodes are reverse biased, and when the capacitance of the plurality of varactor diodes is adjusted to a first preset range, the operating frequency band of the absorption-through integrated antenna cover unit structure is within a first frequency band range, realizing an ATA type wave absorption mode; In response to the control signal, when the multiple PIN diodes are forward biased and the capacitance of the multiple varactor diodes is adjusted to a second preset range, the operating frequency band of the integrated absorption antenna cover unit structure is within a second frequency band range, realizing a TA type absorption mode; wherein, the value of the first preset range is smaller than the value of the second preset range, and the first frequency band range and the second frequency band range partially overlap.

2. The band-tunable absorption integrated antenna cover unit with mode reconstruction according to claim 1 is characterized in that: The wave-transmitting layer includes: a first wave-transmitting sub-layer, a second air sub-layer, a second wave-transmitting sub-layer, a third air sub-layer and a third wave-transmitting sub-layer stacked in sequence from top to bottom; wherein the thickness of the first air layer is greater than the thickness of the second air sub-layer, the thickness of the second air sub-layer is equal to the thickness of the third air sub-layer, and the structure of the first wave-transmitting sub-layer is the same as that of the third wave-transmitting sub-layer.

3. The band-tunable absorption integrated antenna cover unit with mode reconstruction according to claim 1 is characterized in that: The wave absorbing layer comprises: a first dielectric substrate; a hollow metal sheet with a cross structure is arranged on the first dielectric substrate, and the four ends of the hollow metal sheet are semicircular; four lumped resistors are evenly arranged at the center of the metal sheet, and a structure consisting of a first sheet structure, a semicircular sheet and a second sheet structure is arranged in the four ends of the hollow metal sheet, wherein one of the PIN diodes is arranged on the semicircular sheet.

4. The band-tunable absorption integrated antenna cover unit with mode reconstruction according to claim 3 is characterized in that: The length and width of the first dielectric substrate are both in the range of 8mm to 12mm, and the thickness is in the range of 0.8mm to 1.2mm; the width of each end of the hollow metal sheet is in the range of 1mm to 2mm, and the hollow width is in the range of 0.5mm to 1mm; the length of each end of the hollow metal sheet is in the range of 2mm to 3mm, and the hollow length is in the range of 2mm to 3mm; the diameter of the semicircular sheet is in the range of 0.1mm to 0.2mm, and the width is in the range of 0.1mm to 15mm.

5. The band-tunable absorption integrated antenna cover unit with mode reconstruction according to claim 2 is characterized in that: The first wave-transmitting sublayer includes: a second dielectric substrate, and four evenly distributed first rectangular metal sheets arranged on the second dielectric substrate, two adjacent first rectangular metal sheets are connected by two rectangular long metal sheets, and a varactor diode is arranged between the two rectangular long metal sheets.

6. The band-tunable absorption integrated antenna cover unit with mode reconstruction according to claim 2 is characterized in that: The second wave-transmitting sub-layer includes: a third dielectric substrate, and four second rectangular metal sheets evenly distributed on the third dielectric substrate.

7. The band-tunable absorption integrated antenna cover unit with mode reconstruction according to claim 5 is characterized in that: The length and width of the second dielectric substrate are both in the range of 8mm to 12mm, and the thickness is in the range of 0.1mm to 0.3mm; the length and width of the first rectangular metal sheet are both in the range of 1mm to 5mm; and the length of the rectangular long metal sheet is in the range of 0.5mm to 1mm, and the width is in the range of 0.1mm to 0.5mm.

8. The band-tunable absorption integrated antenna cover unit with mode reconstruction according to claim 6, characterized in that: The thickness and width of the third dielectric substrate are both in the range of 8 mm to 12 mm, and the thickness is in the range of 0.1 mm to 0.3 mm; the length and width of the second rectangular metal sheet are both in the range of 1 mm to 5 mm.

9. The band-tunable absorption integrated antenna cover unit with mode reconstruction according to claim 2, characterized in that: The thickness of the first air layer ranges from 1 mm to 5 mm, and the thickness of the second air sublayer ranges from 0.5 mm to 1 mm.

10. The frequency band tunable absorption integrated antenna cover unit with mode reconstruction according to claim 1, characterized in that: The first preset range is 0.25 pF to 0.4 pF, and the second preset range is 1.8 pF to 3 pF.

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