Radio frequency front-end circuit, radio frequency transceiving device and electronic equipment

Abstract

The invention provides a radio frequency front-end circuit, a radio frequency transceiving device and electronic equipment. The radio frequency front-end circuit comprises a first power amplifier and a power amplification module; the first power amplifier is provided with a first port, and the first port is used for outputting a transmitting signal of a target frequency band; the power amplification module is provided with an input port and an output port, the input port is electrically connected to the first port, the output port is used for being electrically connected to the first radiator, the power amplification module comprises a second power amplifier, and the second power amplifier is used for carrying out power amplification on the transmitted signal; the maximum input power capable of being borne by the second power amplifier is greater than the maximum output power capable of being borne by the first power amplifier; the radio frequency front-end circuit has a first state in which the input port is electrically connected to the output port via the second power amplifier; and a second state in which the input port is electrically connected to the output port while avoiding the second power amplifier. The radio frequency front-end circuit provided by the invention has relatively high TRP.

Description

Technical Field

[0001] The present application relates to the field of communication technology, and in particular to a radio frequency front-end circuit, a radio frequency transceiver and an electronic device. Background Art

[0002] With the development of technology, electronic devices with communication functions such as mobile phones are becoming more and more popular and their functions are becoming more and more powerful. Electronic devices usually include radio frequency transceivers to realize the communication function of electronic devices. However, the total radiated power (Total Radiated Power, TRP) of the radio frequency transceiver in the electronic device in the related art when radiating electromagnetic wave signals outward is limited, which in turn affects the communication performance of the radio frequency transceiver. Summary of the invention

[0003] In a first aspect, an embodiment of the present application provides a radio frequency front-end circuit, the radio frequency front-end circuit comprising:

[0004] A first power amplifier, the first power amplifier having a first port, the first port being used to output a transmission signal of a target frequency band; and

[0005] A power amplification module, wherein the power amplification module has an input port and an output port, wherein the input port is electrically connected to the first port, and the output port is used to be electrically connected to a first radiator, wherein the power amplification module includes a second power amplifier, and the second power amplifier is used to power amplify the transmission signal, wherein the maximum input power that the second power amplifier can withstand is greater than the maximum output power that the first power amplifier can withstand; the RF front-end circuit has a first state in which the input port is electrically connected to the output port via the second power amplifier; and has a second state in which the input port is electrically connected to the output port avoiding the second power amplifier.

[0006] In summary, the RF front-end circuit provided in the embodiment of the present application has a first state and a second state. When the RF front-end circuit is in the first state, the transmission signal of the target frequency band output by the first port of the first power amplifier is amplified by the second power amplifier and then output via the output port; when the RF front-end circuit is in the second state, the transmission signal of the target frequency band output by the second power amplifier is directly output via the output port without passing through the second power amplifier. Therefore, when the RF front-end circuit is in the first state and the second state, the power of the RF signal output by the output port of the power amplifier module is different. Therefore, the RF front-end circuit can be applied to different environments. In addition, since the maximum input power that the second power amplifier can withstand is greater than the maximum output power that the first power amplifier can withstand, the amplification power of the first power amplifier can meet the requirements of the relevant protocol, and can reduce or even avoid the risk of the first power amplifier being burned out, thereby improving the reliability of the RF front-end circuit. Further, the RF front-end circuit includes a first power amplifier and a second power amplifier, and the total radiated power (Total Radiated Power, TRP) of the RF front-end circuit when transmitting the transmission signal of the target frequency band is high. When the first power amplifier and the second power amplifier are located on a main board, the TRP of the main board can be improved.

[0007] In a second aspect, an embodiment of the present application provides a radio frequency transceiver device, the radio frequency transceiver device comprising:

[0008] a first radiator; and

[0009] The RF front-end circuit as described in the first aspect.

[0010] In a third aspect, an embodiment of the present application provides an electronic device, wherein the electronic device includes the radio frequency transceiver device as described in the second aspect. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0012] Figure 1 A schematic diagram of an electronic device provided in one embodiment of the present application;

[0013] Figure 2 An implementation method Figure 1 A circuit block diagram of a radio frequency transceiver in an electronic device shown in ;

[0014] Figure 3 Another embodiment Figure 1 A circuit block diagram of a radio frequency transceiver in an electronic device shown in ;

[0015] Figure 4 A schematic diagram of a radio frequency front-end circuit in a first state provided by an embodiment of the present application;

[0016] Figure 5 for Figure 4 A schematic diagram of the radio frequency front end circuit shown in the second state;

[0017] Figure 6 A schematic diagram showing details of a radio frequency front-end circuit in a first state shown in another embodiment;

[0018] Figure 7 for Figure 6 A detailed identification schematic diagram of the radio frequency front end circuit shown in the second state;

[0019] Figure 8 A schematic diagram of a radio frequency front-end circuit provided in yet another embodiment of the present application;

[0020] Fig. 9 A schematic diagram of a radio frequency front-end circuit provided in another embodiment of the present application;

[0021] Fig.10 A schematic diagram of a radio frequency front-end circuit provided in yet another embodiment of the present application;

[0022] Fig.11 A schematic diagram of a radio frequency front-end circuit provided for yet another embodiment of the present application. DETAILED DESCRIPTION

[0023] The technical solution of the present application will be described clearly and completely below in conjunction with the accompanying drawings. Obviously, the embodiments described in the present application are only a part of the embodiments, not all of the embodiments. Based on the embodiments provided in the present application, all other embodiments obtained by ordinary technicians in this field without creative work belong to the protection scope of the present application.

[0024] Reference to "embodiments" in this application means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it mutually exclusive, independent, or alternative to other embodiments. It can be explicitly and implicitly understood by those skilled in the art that the embodiments described in this application can be combined with other embodiments.

[0025] The terms "first", "second", etc. in the specification and claims of this application and the above-mentioned drawings are used to distinguish different objects, rather than to describe a specific order. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions. For example: a component or device including one or more parts is not limited to the one or more parts listed, but optionally includes one or more parts that are not listed but inherent to the exemplified product, or one or more parts that it should have based on the described function.

[0026] An embodiment of the present application provides an electronic device 1. The electronic device 1 includes but is not limited to a mobile phone, a telephone, a television, a tablet computer (Pad), a personal computer, a laptop computer (Personal Computer, PC), a vehicle-mounted device, a headset, a watch, a wearable device, and other devices capable of transmitting and receiving electromagnetic wave signals. In the schematic diagram of the embodiment of the present application, the electronic device 1 is illustrated as a mobile phone as an example, which should be understood that it should not be understood as a limitation on the electronic device 1 provided in the embodiment of the present application. The electronic device 1 provided in the embodiment of the present application is introduced.

[0027] See also Figure 1 and Figure 2 , Figure 1 A schematic diagram of an electronic device provided in one embodiment of the present application; Figure 2 An implementation method Figure 1 The circuit block diagram of the radio frequency transceiver in the electronic device shown in the figure. The electronic device 1 includes a radio frequency transceiver 10. The radio frequency transceiver 10 is used to transmit electromagnetic wave signals in the target frequency band. In one embodiment, the radio frequency transceiver 10 is also used to receive electromagnetic wave signals in the target frequency band. In this way, the radio frequency transceiver 10 can realize the communication function of the target frequency band.

[0028] The target frequency band may be, but is not limited to, a frequency band of a communication standard such as 2G, 3G, 4G, 5G, or 6G. For example, the target frequency band may be, but is not limited to, a low frequency band (Low Band, LB), a middle frequency band (Middle Band, MB), or a high frequency band (High Band, HB), etc.

[0029] In one embodiment, the electronic device 1 further includes a middle frame 30, a display screen 50 and a back cover 60. The display screen 50 is disposed on one side of the middle frame 30. The display screen 50 is a component for realizing a display function in the electronic device 1. The display screen 50 may be, but is not limited to, a screen with a touch function, or a screen without a touch function, which is not limited in the present application. The back cover 60 is disposed on the other side of the middle frame 30. In other words, the back cover 60 and the display screen 50 are respectively disposed on two opposite sides of the middle frame 30. When the electronic device 1 further includes a battery, the back cover 60 is also referred to as a battery cover. The material of the back cover 60 may be metal or non-metal, which is not limited in the present embodiment.

[0030] It is understandable that the introduction of the electronic device 1 provided in the embodiment of the present application is only an introduction to an application environment of the radio frequency transceiver 10. It should not be understood as a limitation of the radio frequency transceiver 10 provided in the embodiment of the present application. Next, the radio frequency transceiver 10 provided in the embodiment of the present application is introduced in detail.

[0031] Specifically, see Figure 2 , the RF transceiver device 10 includes a first radiator 200 and a RF front-end circuit 100. The RF front-end circuit 100 is electrically connected to the first radiator 200 to transmit the electromagnetic wave signal of the target frequency band through the first radiator 200. In other words, the first radiator 200 is a radiator in the RF transceiver device 10 that transmits the electromagnetic wave signal of the target frequency band.

[0032] The first radiator 200 may be a laser direct structuring (LDS) radiator, or a flexible printed circuit (FPC) radiator, or a print direct structuring (PDS) radiator, or a metal branch radiator. When the RF transceiver 10 is applied to an electronic device 1, the first radiator 200 may be a mechanical design antenna (MDA) radiator designed using the metal insert of the electronic device 1 itself. For example, the first radiator 200 may be an antenna radiator designed using the middle frame 30 formed of plastic and metal of the electronic device 1. In addition, the first radiator 200 may also be a metal frame radiator designed using a metal middle frame 30.

[0033] See also Figure 3 , Figure 3 Another embodiment Figure 1. In the present embodiment, in addition to the RF front-end circuit 100 and the first radiator 200, the RF transceiver 10 also includes at least one of a second radiator 300, a third radiator 400 and a fourth radiator 500. In the schematic diagram of the present embodiment, the RF transceiver 10 also includes the second radiator 300, the third radiator 400 and the fourth radiator 500. It can be understood that it should not be understood as a limitation on the RF transceiver 10 provided in the embodiment of the present application. The second radiator 300, the third radiator 400 and the fourth radiator 500 are electrically connected to the RF transceiver 10, respectively.

[0034] In this embodiment, the second radiator 300, the third radiator 400 and the fourth radiator 500 are radiators for receiving electromagnetic wave signals in the target frequency band in the RF transceiver 10. The detailed description will be made later in conjunction with the specific structure of the RF front-end circuit 100.

[0035] The second radiator 300 may be a laser direct structuring (LDS) radiator, or a flexible printed circuit (FPC) radiator, or a print direct structuring (PDS) radiator, or a metal branch radiator. When the RF transceiver 10 is applied to an electronic device 1, the second radiator 300 may be a mechanical design antenna (MDA) radiator designed using the metal insert of the electronic device 1 itself. For example, the second radiator 300 may be an antenna radiator designed using the middle frame 30 formed of plastic and metal of the electronic device 1. In addition, the second radiator 300 may also be a metal frame radiator designed using a metal middle frame 30. The type of the second radiator 300 may be the same as or different from the type of the first radiator 200, which is not limited here.

[0036] The third radiator 400 may be a laser direct structuring (LDS) radiator, or a flexible printed circuit (FPC) radiator, or a print direct structuring (PDS) radiator, or a metal branch radiator. When the RF transceiver 10 is applied to an electronic device 1, the third radiator 400 may be a mechanical design antenna (MDA) radiator designed using the metal insert of the electronic device 1 itself. For example, the third radiator 400 may be an antenna radiator designed using the middle frame 30 formed of plastic and metal of the electronic device 1. In addition, the third radiator 400 may also be a metal frame radiator designed using a metal middle frame 30. The type of the third radiator 400 may be the same as or different from the type of the first radiator 200, which is not limited here.

[0037] The fourth radiator 500 may be a laser direct structuring (LDS) radiator, or a flexible printed circuit (FPC) radiator, or a print direct structuring (PDS) radiator, or a metal branch radiator. When the RF transceiver 10 is applied to an electronic device 1, the fourth radiator 500 may be a mechanical design antenna (MDA) radiator designed using the metal insert of the electronic device 1 itself. For example, the fourth radiator 500 may be an antenna radiator designed using the middle frame 30 formed of plastic and metal of the electronic device 1. In addition, the fourth radiator 500 may also be a metal frame radiator designed using a metal middle frame 30. The type of the fourth radiator 500 may be the same as or different from the type of the first radiator 200, which is not limited here.

[0038] Next, the RF front-end circuit 100 provided in the embodiment of the present application is introduced in detail.

[0039] See also Figure 4 and Figure 5 , Figure 4 A schematic diagram of a radio frequency front-end circuit in a first state provided by an embodiment of the present application; Figure 5 for Figure 4Schematic diagram of a radio frequency front-end circuit in a second state as shown in the figure. The radio frequency front-end circuit 100 includes a first power amplifier 120 and a power amplification module 130. The first power amplifier 120 has a first port 120a, and the first port 120a is used to output a transmit signal (TX) of a target frequency band. The power amplification module 130 has an input port 130a and an output port 130b. The input port 130a is electrically connected to the first port 120a, and the output port 130b is used to be electrically connected to a first radiator 200. The power amplification module 130 includes a second power amplifier 133. The second power amplifier 133 is used to power amplify the transmit signal, wherein the maximum input power that the second power amplifier 133 can withstand is greater than the maximum output power that the first power amplifier 120 can withstand. The radio frequency front-end circuit 100 has a first state in which the input port 130a is electrically connected to the output port 130b via the second power amplifier 133. The RF front-end circuit 100 further has a second state in which the input port 130 a avoids the second power amplifier 133 and is electrically connected to the output port 130 b .

[0040] The first port 120a of the first power amplifier 120 (PA) is used to output a transmit signal (Tx) in a target frequency band, and therefore, the first port 120a is also referred to as a Tx port.

[0041] Typically, the first power amplifier 120 is located on the mainboard. The amplification power of the first power amplifier 120 needs to meet the 3GPP protocol requirements. In addition, if the power of the first power amplifier 120 is too large, the first power amplifier 120 may be burned.

[0042] The power amplification module 130 includes a second power amplifier 133, and the second power amplifier 133 is used to receive the transmission signal output by the first power amplifier 120, and output the transmission signal after power amplification.

[0043] Since the transmission signal output by the first power amplifier 120 passes through the second power amplifier 133, the second power amplifier 133 will power amplify the transmission signal, so the power of the transmission signal after power amplification by the second power amplifier 133 is greater than the power of the transmission signal output by the first power amplifier 120. When the transmission signal output by the second power amplifier 133 is output to the radiator (i.e., the first radiator 200), the power of the electromagnetic wave signal generated by the radiator according to the transmission signal output by the second power amplifier 133 is greater than the power of the electromagnetic wave signal generated according to the transmission signal output by the first power amplifier 120.

[0044] Specifically, for the convenience of description, the radio frequency signal output by the first power amplifier 120 is named as the transmission signal A, and the second power amplifier 133 receives the transmission signal A and amplifies the power of the transmission signal A to obtain the transmission signal B. The power of the transmission signal B is greater than the power of the transmission signal A. The radiator (i.e., the first radiator 200) generates an electromagnetic wave signal B according to the transmission signal B. If the radiator is directly connected to the first power amplifier 120, the radiator obtains the electromagnetic wave signal A according to the transmission signal A. Then, the power of the electromagnetic wave signal B is greater than the power of the electromagnetic wave signal A.

[0045] The maximum input power that the second power amplifier 133 can withstand is greater than the maximum output power that the first power amplifier 120 can withstand. On the one hand, the first power amplifier 120 and the second power amplifier 133 can amplify the power of the transmission signal. When the RF front-end circuit 100 is applied to the RF transceiver 10, the first radiator 200 electrically connected to the second power amplifier 133 can obtain a high-power electromagnetic wave signal according to the transmission signal output by the second power amplifier 133. On the other hand, in order to obtain a high-power transmission signal, the RF front-end circuit 100 provided in the embodiment of the present application does not increase the power of the first power amplifier 120, but sets the second power amplifier 133 to act on the transmission signal output by the first power amplifier 120. This can reduce or even avoid the risk of the first power amplifier 120 not complying with the 3GPP protocol when the power of the first power amplifier 120 is too large, and can also reduce or even avoid the risk of the first power amplifier 120 being burned out due to the excessive power of the first power amplifier 120.

[0046] The RF front-end circuit 100 has a first state in which the input port 130a is electrically connected to the output port 130b via the second power amplifier 133; the RF front-end circuit 100 also has a second state in which the input port 130a avoids the second power amplifier 133 and is electrically connected to the output port 130b. In other words, the RF front-end circuit 100 has a first state and a second state. When the RF front-end circuit 100 is in the first state, the two ends of the second power amplifier 133 are electrically connected to the input port 130a of the power amplifier module 130 and the output port 130b of the power amplifier module 130, respectively. The transmission signal output by the first power amplifier 120 received by the input port 130a of the power amplifier module 130 will be power amplified by the second power amplifier 133 and output via the output port 130b of the power amplifier module 130. When the RF front-end circuit 100 is in the second state, the transmission signal output by the first power amplifier 120 enters through the input port 130a of the power amplifier module 130, does not pass through the second power amplifier 133, and is directly output from the output port 130b of the power amplifier module 130. For the convenience of description, when the RF front-end circuit 100 is in the first state, the power of the RF signal output by the output port 130b of the power amplifier module 130 is the first power; when the RF front-end circuit 100 is in the second state, the power of the RF signal output by the output port 130b of the power amplifier module 130 is the second power, wherein the second power is less than the first power.

[0047] It can be seen that the RF front-end circuit 100 provided in the embodiment of the present application has a first state and a second state, and when the RF front-end circuit 100 is in the second state, the power of the RF signal output by the output port 130b of the power amplifier module 130 (i.e., the second power) is less than the power of the RF signal output by the output port 130b of the power amplifier module 130 when the RF front-end circuit 100 is in the first state (i.e., the first power). Therefore, when the RF front-end circuit 100 uses the target frequency band for communication, it can be in the first state or the second state according to the strength of the network environment of the target frequency band. For example, when the RF front-end circuit 100 is in a weak network state, the RF front-end circuit 100 is in the first state, and the RF signal output by the target frequency band is the first power; when the RF front-end circuit 100 is in a normal network state, the RF front-end circuit 100 is in the second state, and the RF signal output by the target frequency band is the second power. Among them, when the RF front-end circuit 100 is in a weak network state, the strength of the received signal of the target frequency band is less than the strength of the received signal of the target frequency band received by the RF front-end circuit 100 in a normal network state. For the convenience of description, the strength of the received signal of the target frequency band received by the RF front-end circuit 100 in a weak network state is named as the first strength, and the strength of the received signal of the target frequency band received by the RF front-end circuit 100 in a normal network state is named as the second strength, and the first strength is less than the second strength.

[0048] In summary, the RF front-end circuit 100 provided in the embodiment of the present application has a first state and a second state. When the RF front-end circuit 100 is in the first state, the transmission signal of the target frequency band output by the first port 120a of the first power amplifier 120 is amplified by the second power amplifier 133 and then output via the output port 130b; when the RF front-end circuit 100 is in the second state, the transmission signal of the target frequency band output by the second power amplifier 133 is not passed through the second power amplifier 133 but directly output via the output port 130b. Therefore, when the RF front-end circuit 100 is in the first state and the second state, the power of the RF signal output by the output port 130b of the power amplifier module 130 is different. Therefore, the RF front-end circuit 100 can be applied to different environments. In addition, since the maximum input power that the second power amplifier 133 can withstand is greater than the maximum output power that the first power amplifier 120 can withstand, the amplification power of the first power amplifier 120 can meet the requirements of the relevant protocol, and can reduce or even avoid the risk of the first power amplifier 120 being burned out, thereby improving the reliability of the RF front-end circuit 100. Furthermore, the RF front-end circuit 100 includes a first power amplifier 120 and a second power amplifier 133, and the RF front-end circuit 100 has a higher total radiated power (TRP) when transmitting the transmission signal of the target frequency band. When the first power amplifier 120 and the second power amplifier 133 are located on the main board, the TRP of the main board can be improved.

[0049] Please also read Figure 6 and Figure 7 , Figure 6 A schematic diagram showing details of a radio frequency front-end circuit in a first state shown in another embodiment; Figure 7 for Figure 6Detailed identification diagram of the RF front-end circuit in the second state shown in FIG. In this embodiment, the second power amplifier 133 has an input pin 133a and an output pin 133b. The power amplifier module 130 also includes a first switch 131 and a second switch 132. One end of the first switch 131 is electrically connected to the input port 130a. One end of the second switch 132 is electrically connected to the output port 130b. When the RF front-end circuit 100 is in the first state, the other end of the first switch 131 is electrically connected to the input pin 133a, and the other end of the second switch 132 is electrically connected to the output pin 133b. When the RF front-end circuit 100 is in the second state, the other end of the first switch 131 is electrically disconnected from the input pin 133a, the other end of the second switch 132 is electrically disconnected from the output pin 133b, and the other end of the first switch 131 is electrically connected to the other end of the second switch 132.

[0050] When the other end of the first switch 131 is electrically connected to the other end of the second switch 132 , the other end of the first switch 131 and the other end of the second switch 132 may be electrically connected via a conductive line.

[0051] One end of the first switch 131 is electrically connected to the input port 130a, and the other end of the first switch 131 can be electrically connected to the input pin 133a of the second power amplifier 133, or the other end of the first switch 131 can be electrically connected to one end of the conductive line. Correspondingly, one end of the second switch 132 is electrically connected to the output port 130b, and the other end of the second switch 132 can be electrically connected to the output pin 133b of the second power amplifier 133, or the other end of the second switch 132 can be electrically connected to the other end of the conductive line. When the other end of the first switch 131 is electrically connected to one end of the conductive line, and the other end of the second switch 132 is electrically connected to the other end of the conductive line, the other end of the first switch 131 is electrically connected to the other end of the second switch 132. It can be understood that in other embodiments, when the other end of the first switch 131 is electrically connected to the other end of the second switch 132, it is not limited to being electrically connected through the conductive wire. The embodiment of the present application does not limit the manner in which the other end of the first switch 131 is electrically connected to the other end of the second switch 132.

[0052] One end of the first switch 131 is electrically connected to the input port 130a, and when the other end of the first switch 131 is electrically connected to the input pin 133a of the second power amplifier 133; one end of the second switch 132 is electrically connected to the output port 130b, and the other end of the second switch 132 is electrically connected to the output pin 133b of the second power amplifier 133, the input port 130a is electrically connected to the output port 130b via the second power amplifier 133, and the RF front-end circuit 100 is in the first state.

[0053] Correspondingly, one end of the first switch 131 is electrically connected to the input port 130a, and one end of the second switch 132 is electrically connected to the output port 130b. When the other end of the first switch 131 is electrically connected to the other end of the second switch 132, the input port 130a is electrically connected to the output port 130b via the first switch 131 and the second switch 132, and the RF front-end circuit 100 is in the second state.

[0054] It can be seen that the RF front-end circuit 100 provided in the embodiment of the present application, the power amplifier module 130 also includes a first switch 131 and a second switch 132, and the first switch 131 and the second switch 132 cooperate to enable the RF front-end circuit 100 to have a first state and a second state. It can be seen that the power amplifier module 130 of the RF front-end circuit 100 provided in the embodiment of the present application can use a relatively simple circuit device or circuit module to realize the first state and the second state.

[0055] Furthermore, in one embodiment, the maximum input power that the second power amplifier 133 can withstand satisfies: P 2in ≥25dBm.

[0056] In the RF front-end circuit 100 provided in the embodiment of the present application, the maximum input power that the second power amplifier 133 can withstand satisfies: P 2in ≥25dBm, therefore, the second power amplifier 133 is also referred to as a second power amplifier 133 with high input power.

[0057] For example, the maximum input power P that the second power amplifier 133 can withstand is 2in It can be but not limited to 25dBm, 26dBm, 27dBm, 28dBm, 29dBm, 30dBm, etc. The maximum input power that the second power amplifier 133 can withstand satisfies: P 2in≥25dBm can enable the second power amplifier 133 to withstand the transmission signal of the target frequency band with relatively large input power, so that the second power amplifier 133 is not easily burned out, thereby ensuring the reliability of the RF front-end circuit 100.

[0058] Furthermore, in one embodiment, the maximum output power that the first power amplifier 120 can withstand satisfies: 5dBm≤P 1out ≤10dBm; the maximum input power that the second power amplifier 133 can withstand satisfies: 25dBm≤P 2in ≤30dBm.

[0059] For example, the maximum output power P that the first power amplifier 120 can withstand is 1out It can be, but is not limited to, 5dBm, 6dBm, 7dBm, 8dBm, 9dBm, or 10dBm.

[0060] The maximum input power P that the second power amplifier 133 can withstand 2in It can be but is not limited to 25dBm, 26dBm, 27dBm, 28dBm, 29dBm, 30dBm, etc.

[0061] In the RF front-end circuit 100 provided in the embodiment of the present application, the maximum output power that the first power amplifier 120 can withstand satisfies: 5dBm≤P 1out ≤10dBm; the maximum input power that the second power amplifier 133 can withstand satisfies: 25dBm≤P 2in ≤30dBm, on the one hand, the first power amplifier 120 and the second power amplifier 133 can better amplify the power of the transmission signal of the target frequency band, so that the RF front end can output the transmission signal of the target frequency band with higher power; on the other hand, the first power amplifier 120 can meet the requirements of the relevant protocol and is not easily burned out, thereby improving the reliability of the RF front end circuit 100.

[0062] Furthermore, in one embodiment, the gain of the first power amplifier 120 is a first gain G1, and the gain of the second power amplifier 133 is a second gain G2, wherein G2<G1.

[0063] In this embodiment, the gain of the first power amplifier 120 is the first gain G1, and the gain of the second power amplifier 133 is the second gain G2, wherein G2<G1, in other words, the gain of the second power amplifier 133 is less than the gain of the first power amplifier 120. The gain of the second power amplifier 133 is less than the gain of the first power amplifier 120, which to a certain extent indicates that the second power amplifier 133 has good linearity, so that the transmission signal output after power amplification by the second power amplifier 133 is consistent with the transmission signal input to the second power amplifier 133. The quality of the transmission signal of the target frequency band output by the RF front-end circuit 100 is further improved.

[0064] Furthermore, in one embodiment, the gain (Gain) G1 of the first power amplifier 120 satisfies: 20dB≤G1≤30dB; the gain G2 of the second power amplifier 133 satisfies: 3dB≤G2≤10dB.

[0065] For example, the gain G1 of the first power amplifier 120 may be, but is not limited to, 20 dB, 21 dB, 22 dB, 23 dB, 24 dB, 25 dB, 26 dB, 27 dB, 28 dB, 29 dB, or 30 dB. The gain G2 of the second power amplifier 133 may be, but is not limited to, 3 dB, 4 dB, 5 dB, 6 dB, 7 dB, 8 dB, 9 dB, or 10 dB.

[0066] The gain G1 of the first power amplifier 120 satisfies: 20dB≤G1≤30dB, so that the gain of the transmission signal of the target frequency band obtained by amplifying the received signal by the first power amplifier 120 is relatively large. The gain G2 of the second power amplifier 133 satisfies: 3dB≤G2≤10dB, which can better compensate for the loss of the radiator (i.e., the first radiator 200) on the one hand, and on the other hand, the linearity of the RF signal output after the second power amplifier 133 amplifies the transmission signal output by the first power amplifier 120 is better, so that the transmission signal output after power amplification by the second power amplifier 133 is more consistent with the transmission signal input to the second power amplifier 133. The quality of the transmission signal of the target frequency band output by the RF front-end circuit 100 is further improved.

[0067] It can be seen that, in one embodiment, the first power amplifier 120 is a power amplifier with high input power, low gain and high linearity.

[0068] See also Figure 8 , Figure 8A schematic diagram of a radio frequency front-end circuit provided in another embodiment of the present application. The first power amplifier 120 further has a second port 120b. The second port 120b is used to be electrically connected to the second radiator 300 to receive a diversity reception signal (DRX) of the target frequency band.

[0069] The first power amplifier 120 also includes a second port 120b which can be combined with the RF front-end circuit 100 provided in any of the previous embodiments. In the schematic diagram of this embodiment, the first power amplifier 120 also includes a second port 120b which is combined with the RF front-end circuit 100 provided in the previous embodiment for illustration. It can be understood that this should not be understood as a limitation on the RF front-end circuit 100 provided in the embodiment of the present application.

[0070] The first power amplifier 120 also includes a second port 120b, which is used to be electrically connected to the second radiator 300 for receiving the diversity reception signal of the target frequency band. Therefore, the RF front-end circuit 100 provided in the embodiment of the present application can realize the diversity reception function of the target frequency band.

[0071] See also Fig. 9 , Fig. 9 A schematic diagram of an RF front-end circuit provided for another embodiment of the present application. In this embodiment, the first power amplifier 120 also has a second port 120b. The second port 120b is used to electrically connect to the second radiator 300 to receive the diversity receive signal (DRX) of the target frequency band. Please refer to the previous description of the second port 120b, which will not be repeated here. Further, in this embodiment, the RF front-end circuit 100 also includes an RF transceiver 110. The RF transceiver 110 has a first RF port 110a and a second RF port 110b. The first RF port 110a is electrically connected to the input end of the first power amplifier 120. The second RF port 110b is used to electrically connect to the third radiator 400 to receive the main set receive signal (PXR) of the target frequency band.

[0072] In an implementation, the RF front-end circuit 100 further includes a RF transceiver 110, and the RF transceiver 110 has a first RF port 110a and a second RF port 110b. Therefore, the RF front-end circuit 100 provided in the implementation of the present application can not only realize the transmission of the target frequency band, but also realize the diversity reception of the target frequency band and the main set reception of the target frequency band. It can be seen that the RF front-end circuit 100 provided in the implementation of the present application can realize one-way transmission and two-way reception (1T2R).

[0073] For further information, see Fig.10 , Fig.10This is a schematic diagram of a radio frequency front-end circuit provided in yet another embodiment of the present application. The radio frequency transceiver 110 further includes a third radio frequency port 110c. The third radio frequency port 110c is used to be electrically connected to the fourth radiator 500 to receive a receive signal (RX) of the target frequency band.

[0074] Further, in this embodiment, the RF front-end circuit 100 provided in the embodiment of the present application can realize not only the transmission of the target frequency band, but also the diversity reception of the target frequency band, the main set reception of the target frequency band, and the reception of the target frequency band. Therefore, the RF front-end circuit 100 provided in the embodiment of the present application can realize one-way transmission and three-way reception (1T3R) of the target frequency band.

[0075] For further information, see Fig.11 , Fig.11 Schematic diagram of a radio frequency front-end circuit provided in yet another embodiment of the present application. Fig.10 The structure of the RF front-end circuit 100 provided in the corresponding embodiment is basically the same. The difference is that, in this embodiment, the RF front-end circuit 100 also includes a switch unit 160. The switch unit 160 includes a first input terminal 161a and a first output terminal 161b. The first input terminal 161a is electrically connected to the first port 120a, the first output terminal 161b is electrically connected to the first input terminal 161a, and the first output terminal 161b is electrically connected to the input port 130a. In this embodiment, the first output terminal 161b is electrically connected to the input port 130a through the first test socket 151.

[0076] Further, the switch unit 160 further includes a second input terminal 162a and a second output terminal 162b. The second input terminal 162a is used to be electrically connected to the third radiator 400. In this embodiment, the second input terminal 162a is used to be electrically connected to the third radiator 400 through the third test socket 153. The second output terminal 162b is electrically connected to the second input terminal 162a, and the second output terminal 162b is also electrically connected to the second RF port.

[0077] Further, the switch unit 160 further includes a third input terminal 163a and a third output terminal 163b. The third input terminal 163a is used to be electrically connected to the fourth radiator 500. In this embodiment, the third input terminal 163a is used to be electrically connected to the fourth radiator 500 through a fourth test socket. The third output terminal 163b is electrically connected to the third input terminal 163a, and the third output terminal 163b is electrically connected to the third RF port.

[0078] The switch unit 160 may be, but is not limited to, a three-way switch (referred to as a 3P3T switch). It is understandable that in other implementations, the RF front-end circuit 100 may not include the switch unit 160 .

[0079] Please read further Figures 8 to 11 The RF front-end circuit 100 provided in the embodiment of the present application also includes a first test socket 151. The first test socket 151 is electrically connected between the first port 120a of the first power amplifier 120 and the input port 130a of the power amplification module 130. The first test socket 151 is used to test the power of the transmission signal of the target frequency band output by the first port 120a to the power amplification module 130. The power of the transmission signal of the target frequency band tested by the first test socket 151 can be fed back to the RF transceiver 110 or the processor of the electronic device 1, so that the RF transceiver 110 or the processor can adjust the power of the transmission signal transmitted by the RF transceiver 110 according to the power of the transmission signal of the target frequency band detected by the first test socket 151.

[0080] For the convenience of description, the transmission signal output by the RF transceiver 110 is named as the transmission signal X, the transmission signal output by the first power amplifier 120 is named as the transmission signal A, and the transmission signal output by the second power amplifier 133 is named as the transmission signal B. The first power amplifier 120 is used to perform a power amplification of the transmission signal X with a first gain to obtain the transmission signal A; the second power amplifier 133 performs a power amplification of the transmission signal A with a second gain to obtain the transmission signal B.

[0081] In one embodiment, see Figures 8 to 11 The RF front-end circuit 100 further includes a second test socket 152, which is electrically connected to the second port 120b. The second test socket 152 is used to test the power of the diversity reception signal of the target frequency band received by the second port 120b.

[0082] Correspondingly, the power of the diversity reception signal of the target frequency band detected by the second test socket 152 is fed back to the RF transceiver 110 or the processor of the electronic device 1, so that the RF transceiver 110 or the processor controls the RF pre-circuit according to the power of the diversity reception signal of the target frequency band.

[0083] In one embodiment, see Fig. 9 and Fig.11The RF front-end circuit 100 further includes a third test socket 153, which is electrically connected to the second RF port 110b. The third test socket 153 is used to test the power of the main set of received signals of the target frequency band received by the second RF port 110b.

[0084] Correspondingly, the power of the main set of received signals of the target frequency band detected by the third test socket 153 is fed back to the RF transceiver 110 or the processor of the electronic device 1, so that the RF transceiver 110 or the processor controls the RF pre-circuit according to the power of the main set of received signals of the target frequency band.

[0085] In one embodiment, see Fig.10 and Fig.11 The RF front-end circuit 100 further includes a fourth test socket 154, which is electrically connected to the third RF port 110c. The fourth test socket 154 is used to test the power of the received signal of the target frequency band received by the third RF port 110c.

[0086] Correspondingly, the power of the received signal of the target frequency band detected by the fourth test socket 154 is fed back to the RF transceiver 110 or the processor of the electronic device 1, so that the RF transceiver 110 or the processor controls the RF pre-circuit according to the power of the received signal of the target frequency band.

[0087] Understandably, Figures 8 to 11 In the figure, the RF front-end circuit 100 is taken as an example to include a first test socket 151, a second test socket 152, a third test socket 153 and a fourth test socket 154. It can be understood that in other embodiments, the RF front-end circuit 100 may not include the first test socket 151, the second test socket 152, the third test socket 153 and the fourth test socket 154.

[0088] In summary, the RF front-end circuit 100 provided in the embodiment of the present application can be applied to Long Term Evolution (LTE) communication and also to New Radio (NR) communication.

[0089] In summary, the transmit signal and receive signal of the target frequency band of the RF front-end circuit 100 provided in the embodiment of the present application are decoupled. Specifically, when the RF front-end circuit 100 provided in the embodiment of the present application is applied to LTE communication, the transmit signal (TX) and the receive signal (RX) of the target frequency band can be decoupled. When the RF front-end circuit 100 is applied to NR communication, the decoupling of the transmit frequency band (TX) and the receive frequency band (NR) of the target frequency band can be achieved. For example, when the RF front-end circuit 100 is applicable to NR communication, the decoupling of the transmit frequency band in the target frequency band and the receive frequency band in the target frequency band is achieved. Such as the decoupling of the transmit frequency band (TX) and the receive frequency band (NR) of NR in the low frequency band, and the decoupling of the transmit frequency band (TX) and the receive frequency band (NR) of the time division duplex mode (Time Division Duplex, TDD). In addition, the decoupling of the transmit frequency band (TX) and the receive frequency band (NR) of the frequency division duplex mode (Frequency Division Duplex, FDD) of LTE can also be achieved.

[0090] In addition, in one embodiment, the power amplifier module 130 in the RF front-end circuit 100 provided in the embodiment of the present application includes a first switch 131, a second switch 132 and a second power amplifier 133, wherein the first switch 131 may be but not limited to a single-pole double-throw switch (SPDT), and the second switch 132 may be but not limited to an SPDT switch. The first switch 131, the second switch 132 and the second power amplifier 133 in the power amplifier module 130 may be integrated into one chip. The second power amplifier 133 in the chip has an enhancement effect on the transmission signal of the target frequency band output by the first power amplifier 120, and therefore, the power amplifier module 130 may also be referred to as a signal enhancement chip.

[0091] In one embodiment, the first power amplifier 120 and the power amplifier module 130 of the RF front-end circuit 100 are both located on the mainboard. Therefore, in one embodiment, when the RF front-end circuit 100 is in a weak network state, the first switch 131 and the second switch 132 are controlled so that the RF front-end circuit 100 is in the first state, and the transmission signal of the target frequency band output by the first port 120a of the first power amplifier 120 is amplified by the second power amplifier 133 and then output through the output port 130b, which can increase the board-level power of the mainboard, for example, 3dB to 10dB, thereby increasing the TRP of the mainboard. Thereby improving the communication quality of the RF front-end circuit 100 in the target frequency band when it is in a weak network state, and improving the user experience.

[0092] The above is part of the implementation methods of the present application. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principles of the present application. These improvements and modifications are also considered to be within the scope of protection of the present application.

Claims

1. A radio frequency front-end circuit, characterized in that: The radio frequency front end circuit comprises: A first power amplifier, the first power amplifier having a first port, the first port being used to output a transmission signal of a target frequency band; and A power amplification module, wherein the power amplification module has an input port and an output port, wherein the input port is electrically connected to the first port, and the output port is used to be electrically connected to a first radiator, wherein the power amplification module includes a second power amplifier, and the second power amplifier is used to power amplify the transmission signal, wherein the maximum input power that the second power amplifier can withstand is greater than the maximum output power that the first power amplifier can withstand; the RF front-end circuit has a first state in which the input port is electrically connected to the output port via the second power amplifier; and has a second state in which the input port is electrically connected to the output port avoiding the second power amplifier.

2. The radio frequency front-end circuit according to claim 1, characterized in that: The second power amplifier has an input pin and an output pin, and the power amplification module further includes: A first switch, one end of which is electrically connected to the input port; and a second switch, one end of the second switch being electrically connected to the output port; When the RF front-end circuit is in the first state, the other end of the first switch is electrically connected to the input pin, and the other end of the second switch is electrically connected to the output pin; When the RF front-end circuit is in the second state, the other end of the first switch is electrically disconnected from the input pin, the other end of the second switch is electrically disconnected from the output pin, and the other end of the first switch is electrically connected to the other end of the second switch.

3. The radio frequency front-end circuit according to claim 1, characterized in that: The maximum input power that the second power amplifier can withstand satisfies: P 2in ≥25dBm.

4. The radio frequency front-end circuit according to claim 3, characterized in that: The maximum output power that the first power amplifier can withstand satisfies: 5dBm≤P 1out ≤10dBm; The maximum input power that the second power amplifier can withstand satisfies: 25dBm≤P 2in ≤30dBm.

5. The radio frequency front-end circuit according to claim 1, characterized in that: The gain of the first power amplifier is a first gain G1, and the gain of the second power amplifier is a second gain G2, wherein G2<G1.

6. The radio frequency front-end circuit according to claim 5, characterized in that: The gain G1 of the first power amplifier satisfies: 20dB≤G1≤30dB; the gain G2 of the second power amplifier satisfies: 3dB≤G2≤10dB.

7. The radio frequency front-end circuit according to any one of claims 1 to 6, characterized in that: The first power amplifier also has: The second port is used to be electrically connected to a second radiator to receive a diversity reception signal in the target frequency band.

8. The radio frequency front-end circuit according to claim 7, characterized in that: The radio frequency front-end circuit further includes a radio frequency transceiver, and the radio frequency transceiver has: a first radio frequency port, the first radio frequency port being electrically connected to an input end of the first power amplifier; A second radio frequency port, wherein the second radio frequency port is used to be electrically connected to a third radiator to receive a main set of received signals in the target frequency band.

9. The radio frequency front-end circuit according to claim 8, characterized in that: The radio frequency transceiver also includes: A third radio frequency port, wherein the third radio frequency port is used to be electrically connected to a fourth radiator to receive a receiving signal in the target frequency band.

10. A radio frequency transceiver, characterized in that: The radio frequency transceiver comprises: a first radiator; and A radio frequency front-end circuit as claimed in any one of claims 1 to 9.

11. An electronic device, characterized in that: The electronic device comprises the radio frequency transceiver as claimed in claim 10.

Images