Inspection method of marked pattern in photomask data

Abstract

The invention discloses a method for checking a mark pattern in photomask data. The method comprises the following steps: providing the photomask data; obtaining cutting channel photomask data from the photomask data as to-be-processed data; performing data conversion on the to-be-processed data to obtain scribe line layout data; according to the original layout data, acquiring photomask layers and position information of all the marked graphs in the scribe line layout data, and standard pattern graphs corresponding to the marked graphs; according to the photomask layers and position information of all the marked graphs in the original layout data and standard pattern graphs corresponding to all the marked graphs, a plurality of preset windows are established at the corresponding positions of the corresponding photomask layers in the scribe line layout data, and one marked graph corresponds to one preset window; in the scribe line layout data, mark graphs in all the preset windows are obtained; according to the marked graph in the preset window and the corresponding standard pattern graph, a judgment result about whether the marked graph in the preset window is correct or not is obtained, and the correctness of marked graph inspection is improved.

Description

Technical Field

[0001] The invention relates to the technical field of semiconductor manufacturing, and in particular to a method for inspecting a marking pattern in mask data. Background Art

[0002] At present, integrated circuit manufacturers generally manufacture corresponding integrated circuit products based on the layout files provided by the design company. The layout files are usually provided to the integrated circuit manufacturers by the design company in a specific file format (such as GDS). The integrated circuit manufacturer extracts the relevant layout data from the layout files and sends them to the mask shop (MaskShop), which performs data merging and hierarchical operations on the layout data to produce the mask data (Job Deck), thereby forming the layout structure and manufacturing the mask (Mask).

[0003] As the complexity of chip manufacturing processes increases, the requirements for layout layers are increasing, and the requirements for layer graphics are becoming more and more stringent. The accuracy and integrity of the layout structure directly determines the yield of the product. Therefore, before manufacturing the mask, mask data detection (Job Deck View, JDV) is required to ensure the accuracy and integrity of the layout structure.

[0004] However, the current methods for detecting mask data need to be further improved. Summary of the invention

[0005] The technical problem solved by the present invention is to provide a method for checking a marking pattern in mask data so as to improve the accuracy of the mask data checking.

[0006] In order to solve the above technical problems, the technical solution of the present invention provides a method for inspecting mark patterns in mask data, including: providing mask data, the mask data including data of several mask levels, each of the mask levels corresponding to several repeated exposure units in a photolithography process, each of the mask levels including several chip areas and cutting road areas, the cutting road areas having several mark patterns, the mask data including cutting road mask data and chip mask data, the cutting road mask data being data of the cutting road areas of several mask levels, the chip mask data being data of several chip areas of several mask levels, the mask data being obtained after processing original layout data; obtaining the cutting road mask data from the mask data as data to be processed; performing data conversion on the data to be processed, the data conversion including format conversion so that the data to be processed can be The layout data is processed by a layout editing tool, and its magnification, mirror image, and reference coordinate system are made consistent with the original layout data to obtain the cutting path layout data; according to the original layout data, the mask levels and position information of all the marked graphics in the cutting path layout data, and the standard style graphics corresponding to each of the marked graphics are obtained; according to the mask levels and position information of all the marked graphics in the original layout data, and the standard style graphics corresponding to each of the marked graphics, a number of preset windows are established at the corresponding positions of the corresponding mask levels in the cutting path layout data, and one marked graphic corresponds to one preset window; in the cutting path layout data, the marked graphics in each of the preset windows are obtained; according to the marked graphics in the preset windows and the corresponding standard style graphics, a judgment result of whether the marked graphics in the preset windows are correct is obtained.

[0007] Optionally, the method for obtaining a judgment result of whether the marked graphic in the preset window is complete based on the marked graphic in the preset window and the corresponding standard style graphic includes: performing an "exclusive OR logic" operation on the marked graphic and the corresponding standard style graphic, if the operation result has no graphic output, it means that the marked graphic is correct, and if the operation result has a graphic, it means that the marked graphic is incorrect.

[0008] Optionally, the method for obtaining the mask levels and position information of all the mark graphics in the cutting path layout data and the standard style graphics corresponding to each of the mark graphics according to the original layout data includes: providing a mark standard style layout library, the standard style layout library includes a plurality of mark layouts, each of the mark layouts includes a standard style graphic, and the styles of the standard style graphics in different mark layouts are different; providing a mark information file, the mark information file includes the mask levels and position information of all the mark graphics in the original layout data, the standard style graphics corresponding to each of the mark graphics, the position information includes coordinates, and geometric transformation information relative to the standard style graphics; according to the mark standard style layout library and the mark information file, obtaining the mask levels and position information of all the mark graphics in the original layout data and the standard style graphics corresponding to each of the mark graphics.

[0009] Optionally, the coordinates are coordinates of the coordinate origin of the mark pattern graphic corresponding to the mark graphic relative to the center of the exposure unit.

[0010] Optionally, the geometric transformation information includes one or both of rotation and mirroring.

[0011] Optionally, the marking layout also includes a prohibited area, and the standard pattern graphic is located within the prohibited area; the method of establishing a plurality of preset windows at the position of the mask layer corresponding to the cutting path layout data also includes: determining the size of the preset window based on the range of the prohibited area around the standard pattern graphic corresponding to each of the marking graphics.

[0012] Optionally, the cutting road area includes a central cutting road area and a peripheral cutting road area, the peripheral cutting road area surrounds a number of the chip areas and the central cutting road area, and the central cutting road area is located between adjacent chip areas; the marking information file also includes: the exposure range corresponding to each of the mask levels, the width of the cutting road area and the step distance.

[0013] Optionally, the method for establishing a plurality of preset windows also includes: obtaining position information of the peripheral cutting road area according to the exposure range, the width of the cutting road area and the stepping distance; obtaining a plurality of first sub-windows located in the peripheral cutting road area from a plurality of preset windows according to the position information of the peripheral cutting road area; obtaining a second sub-window in the peripheral cutting road area according to the stepping distance and each of the first sub-windows, the second sub-window and the first sub-window being located on opposite sides of the exposure unit.

[0014] Optionally, the method further includes: acquiring a first sub-marker graphic in a first sub-window, and acquiring a second sub-marker graphic in a corresponding second sub-window; and determining whether an area where the mark graphic exists will be repeatedly exposed based on the first sub-marker graphic and the corresponding second sub-marker graphic.

[0015] Optionally, determining whether the area where the mark pattern exists will be repeatedly exposed based on the first sub-mark pattern and the corresponding second sub-mark pattern includes: performing an "AND logic" operation on the first sub-mark pattern and the corresponding second sub-mark pattern, if the operation result has no graphic, it means that no area of ​​the mark pattern is repeatedly exposed, and if the operation result has a graphic, it means that the area where the mark pattern exists will be repeatedly exposed.

[0016] Optionally, the mask data includes some production-level electron beam exposure system data.

[0017] Optionally, the method of obtaining the cutting path mask data from the mask data includes: retaining a number of the production-level electron beam exposure system data corresponding to the cutting path mask data from the mask data, and deleting the remaining number of the production-level electron beam exposure system data.

[0018] Optionally, the mask data also includes a text file, which includes the layer information of the mask and the calling method of several production-level electron beam exposure system data corresponding to the masks of each layer; the method of obtaining the cutting path mask data from the mask data includes: retaining the calling content of several production-level electron beam exposure system data corresponding to the cutting path mask data from the text file, and deleting the remaining calling content.

[0019] Optionally, the cutting path layout data includes layer numbers of each layer; before establishing the preset window, it also includes: establishing a corresponding relationship between the layer number and the layer name according to the layer information in the text file.

[0020] Optionally, the format conversion includes converting the format of the mask data into a GDSII format, an OASIS format or a GDS format.

[0021] Optionally, the data conversion also includes geometric transformation operation processing; the geometric transformation operation processing includes one or more of magnification operation, mirror operation, and coordinate conversion operation.

[0022] Optionally, the magnification of the size of the pattern on the mask is m compared to the size of the pattern on the original layout, and the magnification operation includes performing a 1 / m magnification operation on the mask data.

[0023] Optionally, the mask data and the original layout data are drawn differently with respect to the light-shielding surface of the mask, and the mirroring operation includes performing Y-axis mirroring on the mask data.

[0024] Optionally, the mask data refers to a first coordinate system, the original layout data refers to a second coordinate system, the first coordinate system and the second coordinate system are different, and the coordinate conversion operation converts the coordinates in the data to be processed from the first coordinate system to the coordinates in the second coordinate system.

[0025] Optionally, the standard pattern graphics include light-transmitting pattern graphics and light-shielding pattern graphics.

[0026] Compared with the prior art, the technical solution of the embodiment of the present invention has the following beneficial effects:

[0027] In the method for inspecting the marking graphics in the mask data provided by the technical solution of the present invention, the cutting path mask data in the mask data is converted to obtain the cutting path layout data that can be processed by the layout editing tool, and according to the mask level and position information of all the marking graphics in the original layout data, and the standard pattern graphics corresponding to each of the marking graphics, a number of preset windows are established at the corresponding positions of the corresponding mask levels in the cutting path layout data, and by comparing the marking graphics in the preset windows with the corresponding standard pattern graphics, it is determined whether the marking graphics in the mask data are correct. The above determination is based on the simple data conversion of the cutting path mask data in the mask data. The mask data is the final data before plate making. The inspection method can be automated, which is beneficial to saving production costs and improving the accuracy of marking graphic inspection.

[0028] Furthermore, a first sub-marking pattern is obtained in a first sub-window located in the peripheral cutting path area, and a second sub-marking pattern is obtained in a second sub-window on the opposite side of the first sub-window. Based on the first sub-marking pattern and the corresponding second sub-marking pattern, it is determined whether the area where the marking pattern exists will be repeatedly exposed. The above-mentioned marking pattern inspection method can accurately locate which specific marking pattern has the abnormality of repeated exposure, which is conducive to improving the accuracy of the marking pattern inspection. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 to Figure 2 is a flow chart of steps of a method for inspecting a mark pattern in mask data according to an embodiment of the present invention;

[0030] Figures 3 to 15 It is a structural schematic diagram of each step of a method for inspecting a mark pattern in mask data according to an embodiment of the present invention. DETAILED DESCRIPTION

[0031] It should be noted that the terms “surface” and “on” in this specification are used to describe relative positional relationships in space and are not limited to direct contact.

[0032] As described in the background technology, the current method of detecting mask data needs to be further improved. Specifically, the mask data (Job Deck) used in integrated circuit production will place a large number of mark graphics (Mark) required for the process in the cutting path, such as alignment marks, overlay marks, etc. The lack of these marks in the mask or the error of the graphics will make some process parameters unable to be measured and the wafer (Wafer) on the machine unable to be aligned during the wafer production process, which will eventually lead to the scrapping of the mask or even the scrapping of the wafer.

[0033] At present, the common practice in the industry is to manually visually check the marking patterns in the mask data at the JDV stage, and have engineers manually determine the correctness of the marking patterns, find the marking positions and confirm whether the patterns are consistent with the standard style. However, since there are a large number of marking patterns in each layer of the mask and they are scattered throughout the cutting path, manual inspection is time-consuming and laborious and easy to miss, and the risk of missing the wrong marking patterns is high.

[0034] In order to solve the above problems, the technical solution of the present invention provides a method for inspecting mark graphics in mask data, by performing data conversion on the cutting path mask data in the mask data, obtaining cutting path layout data that can be processed by a layout editing tool, and establishing a number of preset windows at corresponding positions of the corresponding mask layers in the cutting path layout data according to the mask levels and position information of all the mark graphics in the original layout data, and the standard pattern graphics corresponding to each of the mark graphics, and determining whether the mark graphics in the mask data are correct by comparing the mark graphics in the preset windows with the corresponding standard pattern graphics. The above determination is based on obtaining the cutting path mask data by performing a simple data conversion on the mask data, and the mask data is the final data before plate making. The inspection method can be automated, which is beneficial to saving production costs and improving the accuracy of the mark graphics inspection.

[0035] In order to make the above-mentioned objects, features and beneficial effects of the present invention more obvious and easy to understand, specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0036] Figure 1 to Figure 2 The invention is a flowchart of a method for inspecting a mark pattern in mask data according to an embodiment of the present invention.

[0037] Please refer to Figure 1 The method for inspecting the marking pattern in the mask data comprises the following steps:

[0038] Step S101, providing mask data, the mask data including data of several mask levels, each of the mask levels corresponding to several repeated exposure units in the photolithography process, each of the mask levels including several chip areas and cutting road areas, the cutting road areas having several marking patterns, the mask data including cutting road mask data and chip mask data, the cutting road mask data being data of the cutting road areas of several mask levels, the chip mask data being data of several chip areas of several mask levels, and the mask data being obtained after processing the original layout data;

[0039] Step S102, obtaining the cutting path mask data from the mask data as data to be processed;

[0040] Step S103, converting the data to be processed, wherein the data conversion includes format conversion, so that the data to be processed can be processed by a layout editing tool, and the magnification, mirror image, and reference coordinate system of the data are consistent with the original layout data, and the cutting path layout data is obtained;

[0041] Step S104, acquiring the mask level and position information of all the marking patterns in the cutting lane layout data, and the standard pattern corresponding to each marking pattern, according to the original layout data;

[0042] Step S105, according to the mask levels and position information of all the marking patterns in the original layout data, and the standard pattern patterns corresponding to the marking patterns, a plurality of preset windows are established at corresponding positions of the corresponding mask levels in the cutting lane layout data, wherein one marking pattern corresponds to one preset window;

[0043] Step S106, obtaining the marking graphics in each of the preset windows in the cutting path layout data;

[0044] Step S107, obtaining a judgment result of whether the mark graphic in the preset window is correct according to the mark graphic in the preset window and the corresponding standard pattern graphic.

[0045] In this embodiment, in step S104, the method for obtaining the mask level and position information of all the marking patterns in the cutting path layout data and the standard pattern patterns corresponding to each marking pattern according to the original layout data, please refer to Figure 2 .

[0046] The following is a detailed description with reference to the accompanying drawings.

[0047] Figures 3 to 15 It is a structural schematic diagram of each step of a method for inspecting a mark pattern in mask data according to an embodiment of the present invention.

[0048] Execute step S101 to provide mask data, wherein the mask data includes data of several mask levels, each of the mask levels corresponds to several repeated exposure units in a photolithography process, each of the mask levels includes several chip areas and cutting road areas, and the cutting road areas have several marking patterns. The mask data includes cutting road mask data and chip mask data, the cutting road mask data is data of the cutting road areas of several of the mask levels, and the chip mask data is data of several chip areas of several of the mask levels. The mask data is obtained after processing the original layout data.

[0049] The mask data is used to manufacture the mask. In this embodiment, the mask data (Job Deck) is the data of the product before the final plate making (production mask) returned by the mask factory. Specifically, after the original layout data of the product is sent to the mask factory, the mask factory processes the data according to relevant technical documents, and returns the mask data for customers and integrated circuit manufacturers to conduct mask data detection and inspection. After confirming that there is no problem, the mask factory will use the mask data to make the mask. Subsequently, the purpose of the inspection method of the mark pattern in the mask data is to determine whether the mark pattern in the mask data is accurate.

[0050] In this embodiment, the original layout data is provided by a design company to the integrated circuit manufacturer and is in a GDSII (Graphic Data System II) format.

[0051] In other embodiments, the original layout data may be obtained through other means, and may also be in OASIS (Open Artwork System Interchange Standard) format or GDS (Graphic Data System) format, etc.

[0052] Here, for illustration, Figure 3 It is a schematic diagram of the mask structure of a certain mask level, wherein the mask level includes a plurality of chip areas a and cutting road areas b, wherein the cutting road areas b have a plurality of marking patterns (not shown in the figure), wherein the marking patterns include alignment marks used in the photolithography process, patterns for measuring width, patterns for measuring overlay errors, etc.

[0053] In this embodiment, the mask data refers to the first coordinate system X 1 O 1 Y 1 .

[0054] In this embodiment, the scribe line area b includes a central scribe line area b1 and a peripheral scribe line area b2. The peripheral scribe line area b2 surrounds a number of the chip areas a and the central scribe line area b1. The central scribe line area b1 is located between adjacent chip areas a.

[0055] In the wafer manufacturing process, in the exposure process using a photomask as a mask, the chip area a is used to form a chip pattern on the wafer, the cut street area b is used to form a cut street pattern on the wafer, and the peripheral cut street area b2 is used to form a peripheral cut street pattern on the wafer. During the exposure step, there will be a repeated exposure area in the peripheral cut street area b2 between adjacent exposure units. The mark pattern in the peripheral cut street area b2 has the risk of repeated exposure. Therefore, correspondingly, in a single exposure unit of the photomask data, it is necessary to 1 The marking pattern is placed in the peripheral cutting road area b2 on one side of the X direction, and the marking pattern is placed in the peripheral cutting road area b2 on the other side of the X direction. 1 A light blocking area is provided in the peripheral cutting road area b2 on the other side of the cutting road area b2 to avoid repeated exposure of the mark pattern.

[0056] In this embodiment, the method for inspecting the mark pattern in the mask data is further used to determine whether there is a mark pattern repeatedly exposed in the peripheral cutting street area b2.

[0057] In this embodiment, the mask data includes some manufacturing electron beam exposure system data (Manufacturing Electron-Beam Exposure System, referred to as MEBES)

[0058] In this embodiment, the photomask data further includes a text file, wherein the text file includes the hierarchical information of the photomask and a calling method of a plurality of the production-level electron beam exposure system data corresponding to the photomask of each level.

[0059] Here, for illustration, Figure 4 and Figure 5 Part of the file contents of the text files are displayed respectively, wherein Jobfile1 displays the content of each layer of the mask calling the MEBES data, and Job file2 displays the layer information of the mask.

[0060] Specifically, different parts of the data in Job File1 will be distinguished by different CHIPs, among which, "CHIP FRAME (indicated by the dotted line)" is the cutting mask data, "CHIP MAIN_CHIP" is the chip mask data, "CHIPOTHER" is the other parts of the data, "n1, n2..." represent different mask levels, and each mask level will call MEBES data separately, and "Rows ? / ?" are irrelevant to this application and will not be displayed here.

[0061] It should be noted here that Figure 4 and Figure 5 This is for illustration only. MEBES data and calling methods may be implemented in other ways and are not limited here.

[0062] In other embodiments, the text file may not be included.

[0063] Step S102 is executed to obtain the cutting line mask data from the mask data as data to be processed.

[0064] In this embodiment, the method for obtaining the cutting path mask data from the mask data includes: retaining the call contents of a number of the production-level electron beam exposure system data corresponding to the cutting path mask data from the text file, and deleting the remaining call contents.

[0065] For details, please continue to refer to Figure 4 , retain the calling contents of several production-level electron beam exposure system data corresponding to the cutting mask data from the text file Job file1, that is, retain the contents of "CHIP FRAME (dashed line schematic area)", and delete the remaining calling contents to form a new text file Job file-i.

[0066] In another embodiment, the method of obtaining the cutting line mask data from the mask data includes: retaining a number of the production-level electron beam exposure system data corresponding to the cutting line mask data from the mask data, and deleting the remaining number of the production-level electron beam exposure system data.

[0067] Execute step S103 and refer to Figure 6 , converting the data to be processed, wherein the data conversion includes format conversion, so that the data to be processed can be processed by a layout editing tool, and the magnification, mirror image, and reference coordinate system are consistent with the original layout data, and the cutting path layout data is obtained.

[0068] Here, the reason for performing the format conversion is that the mask data cannot be directly processed by the layout editing tool. Therefore, it is necessary to first call the mask data viewing and analysis tool to convert the format of the mask data so that the obtained cutting path layout data can be directly processed by the layout editing tool.

[0069] The format conversion includes converting the format of the mask data into a GDSII format, an OASIS format or a GDS format.

[0070] In this embodiment, the layout editing tool is Klayout, which can edit and process data in GDSII format, OASIS format and GDS format. In other embodiments, the layout editing tool may not be limited thereto.

[0071] In this embodiment, the format conversion is to convert the format of the mask data into a GDSII format, and the mask data viewing and analysis tool is a gold mask view.

[0072] In other embodiments, the format conversion may be converting the format of the mask data into a GDS format or an OASIS format, and the mask data viewing and analysis tool may not be limited thereto.

[0073] In this embodiment, the data conversion also includes geometric transformation operation processing.

[0074] The geometric transformation operation processing includes one or more of a magnification operation, a mirror operation, and a translation operation. Here, the reason for performing the geometric transformation operation processing is that since the mask data has differences in magnification, mirroring, and reference coordinate system compared to the original layout, an inverse operation of the geometric transformation needs to be performed during restoration so that the graphic size, coordinates, etc. in the mask data are restored to be consistent with the original layout data.

[0075] The magnification factor of the size of the pattern on the mask compared to the size of the pattern on the original layout is m, and the magnification operation includes performing a 1 / m magnification operation on the mask data.

[0076] Here, the reason for the magnification operation is that the size of the pattern on the mask will be magnified by a certain factor (such as m=4, 5, 10, etc.) compared to the original layout. That is, in the photolithography process, the pattern on the mask will generally be reduced by a certain factor and then projected onto the wafer surface. If the size of the pattern on the mask is the same as the original layout, Figure 1 If the above magnification operation is not required.

[0077] The mask data and the original layout data are drawn in different ways relative to the light-shielding surface of the mask, and the mirroring operation includes performing Y-axis mirroring processing on the mask data.

[0078] Here, the reason for the mirror operation is that: if the mask data and the original layout data are drawn differently relative to the light-shielding surface of the mask, such as when the mask is made and the mask data is processed with the light-shielding surface upward, while the original layout data is drawn with the light-shielding surface downward, the mask data needs to be processed with the mirror operation. On the contrary, if the mask data and the original layout data are drawn the same relative to the light-shielding surface of the mask, the mirror operation is not required.

[0079] In this embodiment, the mask data refers to the first coordinate system X 1 O 1 Y 1 The original layout data refers to the second coordinate system X 2 O 2 Y 2 , the first coordinate system X 1 O 1 Y 1 and the second coordinate system X 2 O 2 Y 2 Different from the above, the coordinate conversion operation makes the coordinates in the data to be processed change from the first coordinate system X 1 O 1 Y 1 Convert to the second coordinate system X 2 O 2 Y 2 The coordinates in .

[0080] The coordinate conversion operation includes one or both of translation and rotation.

[0081] In this embodiment, the first coordinate system X 1 O 1 Y 1 and the second coordinate system X 2 O 2 Y 2 Both are plane rectangular coordinate systems, the two coordinate systems have the same direction but different coordinate origins, and the coordinate conversion operation includes translation.

[0082] Specifically, the first coordinate system X 1 O 1 Y 1 Exposure unit bottom left corner O 1 is the origin of coordinates, and the second coordinate system X 2 O 2 Y 2 The center of the exposure unit O 2As the coordinate origin, through the translation operation, the reference coordinate system of the data to be processed is consistent with the reference coordinate system of the original layout data, that is, the cutting lane layout data obtained subsequently and the original layout data adopt the same coordinate system, that is, the second coordinate system X 2 O 2 Y 2 .

[0083] Here, for illustration, Figure 6 A schematic diagram of performing the geometric transformation operation on an exposure unit of a mask layer is given in FIG. 1 , wherein: Figure 6 (a) is the data to be processed (i.e., the cutting mask data), in the first coordinate system X 1 O 1 Y 1 The lower left corner of the exposure unit is O. 1 Coordinate origin, Figure 6 (b) is the cutting path layout data obtained after the geometric transformation operation, in the second coordinate system X 2 O 2 Y 2 Next, take the center of the exposure unit O 2 is the origin of coordinates. In the cutting mask data, in the first coordinate system X 1 O 1 Y 1 Next, the exposure unit moves along X 1 The dimension of the direction is A, along the Y 1 The dimension of the direction is B. After the geometric transformation operation, in the second coordinate system X 2 O 2 Y 2 Next, the exposure unit moves along X 2 The dimension of the direction is a = A / m, along the Y 2 The dimension of the direction is b = B / m.

[0084] Step S104 is executed to obtain, according to the original layout data, the mask levels and position information of all the marking patterns in the cutting lane layout data, and the standard pattern patterns corresponding to the marking patterns.

[0085] In this embodiment, the cutting path layout data includes the layer number of each layer, but does not include the layer name. In order to match the layer number and the layer name, please refer to Figure 7 .

[0086] Please refer to Figure 7 , according to the hierarchical information in the text file, establish a corresponding relationship between the layer number and the layer name.

[0087] Specifically, the text file Job file2 contains the layer information of the mask, where Level represents the "layer number", from which the corresponding relationship between MaskTitle and the layer number can be obtained. Since the layer name can be obtained in MaskTile, the relationship between the layer number and the layer name can be obtained. Thus, it is known which layer name data corresponds to each layer number in the cutting path layout data.

[0088] In this embodiment, the method for obtaining the mask level and position information of all the marking patterns in the cutting path layout data and the standard pattern patterns corresponding to each marking pattern according to the original layout data, please refer to Figure 2 , including the following steps:

[0089] Step S1041, providing a standard pattern library of markings, wherein the standard pattern library includes a plurality of marking patterns, each of which includes a standard pattern graphic, and the patterns of the standard pattern graphics in different marking patterns are different;

[0090] Step S1042, providing a marking information file, wherein the marking information file includes the mask layers and position information of all the marking patterns in the original layout data, the standard pattern patterns corresponding to the marking patterns, and the position information includes coordinates and geometric transformation information relative to the standard pattern patterns;

[0091] Step S1043, acquiring the mask levels and position information of all the mark graphics in the original layout data, and the standard pattern graphics corresponding to each mark graphics, according to the mark standard pattern layout library and the mark information file.

[0092] Next, combine the attached Figures 8 to 10 Provide detailed explanation.

[0093] Execute step S1041 to provide a mark standard pattern library, wherein the standard pattern library includes a plurality of mark patterns, each of which includes a standard pattern graphic, and the patterns of the standard pattern graphics in different mark patterns are different.

[0094] In this embodiment, the coordinate systems referenced in the marking plates respectively use the center of the standard pattern as the coordinate origin.

[0095] For illustration, Figure 8 and Fig. 9 Two marking layouts are given, including the first marking layout and the second marking layout. The first marking layout uses X 1 'O 1 Y 1 'Coordinate system, the second marking layout uses X1 'O 1 Y 1 'Coordinate system.

[0096] In other embodiments, the coordinate origin of the reference coordinate system in each of the marking layouts may also be any position.

[0097] It should be noted here that the marking standard pattern library needs to include all the patterns of the marking graphics in the original layout data, and the standard pattern graphics include graphic translucent (the main graphic on the mask is translucent, Clear) pattern and graphic shading (the main graphic on the mask is shading, Dark) pattern, that is, for standard pattern graphics with the same pattern, the Clear pattern and the Dark pattern are different patterns.

[0098] For illustration, Figure 8 The first marking layout provided has a first standard pattern 201, which is a Clear pattern, and its corresponding main pattern on the mask is transparent; Fig. 9 The second marking layout provided has a second standard pattern 202, which is a dark pattern, and its corresponding main pattern on the mask is shielded from light.

[0099] In this embodiment, the marking layout also includes a prohibited area, and the standard pattern graphic is located in the prohibited area. The prohibited area is used to limit the range of the standard pattern graphic. The purpose of setting the prohibited area is to limit the standard pattern graphic to the prohibited area, or to prevent other graphics from appearing in the prohibited area.

[0100] Each of the standard pattern graphics corresponds to a prohibited area. Continuing to take the first standard pattern graphics 201 and the second standard pattern graphics 202 as an example, Figure 8 The first forbidden area 211 corresponding to the first standard pattern 201 is shown in FIG. Fig. 9 The second prohibited area 222 corresponding to the second standard pattern graphic 202 is shown in FIG.

[0101] Subsequently, a preset window can be established at a corresponding position in the cutting path layout data according to the range of the prohibited area of ​​each standard pattern. Continuing with the first standard pattern 201 and the second standard pattern 201 as an example, the coordinates of the lower left and upper right points of each prohibited area, such as (X 1 0', Y 1 0';X 1 1', Y 1 1') to characterize the range of the first forbidden area 211, (X 2 0', Y 2 0';X 2 1', Y 21′) is used to characterize the range of the second forbidden area 222.

[0102] Execute step S1042 to provide a marking information file, wherein the marking information file includes the mask layers and position information of all the marking graphics in the original layout data, the standard pattern graphics corresponding to each marking graphic, and the position information includes coordinates and geometric transformation information relative to the standard pattern graphics.

[0103] In this embodiment, the coordinates are coordinates of the coordinate origin of the mark pattern graphic corresponding to the mark graphic relative to the center of the exposure unit.

[0104] In this embodiment, the geometric transformation information includes one or both of rotation and mirroring.

[0105] For illustration, Fig.10 The first mark pattern Mark-M-1, the second mark pattern Mark-M-2, and the third mark pattern Mark-M-3 in a single exposure unit of the mask level M in the original layout data are given, and their corresponding standard pattern patterns are all the first standard pattern pattern 201. The mark information file is used to respectively give the coordinates (x1, y1) of Mark-M-1, the coordinates (x2, y2) of Mark-M-2, and the coordinates (x3, y3) of Mark-M-3, as well as their respective geometric transformation information relative to the first standard pattern pattern 201. Here, the first mark pattern Mark-M-1 and the second mark pattern Mark-M-2 are rotated 90 degrees counterclockwise relative to the first standard pattern pattern 201, and the third mark pattern Mark-M-3 has only a difference in the coordinate origin relative to the first standard pattern pattern 201.

[0106] According to the above, when the marking pattern in the mask data is correct, a pattern identical to the marking pattern can be obtained at the corresponding mask level and the corresponding position in the cutting path layout data.

[0107] In this embodiment, the marking information file further includes: an exposure range corresponding to each of the mask levels, a width of the cutting street area and a stepping distance. The marking information file is also used to provide the position of the marking pattern in the peripheral cutting street area.

[0108] For illustration, Fig.10 Four exposure units adjacent to the exposure unit above, below, left and right are also shown (the red dotted lines only illustrate the edges of the adjacent exposure units). Specifically, the width of the cutting road area in the first direction X is d1, the width in the second direction Y is d2, the step distance in the first direction X is L1, and the step distance in the second direction Y is L2, so the position of the peripheral cutting road area can be known.

[0109] In this embodiment, the marking information file is extracted from the original layout data. The marking information file can be any one of data, files and documents.

[0110] Next, step S1043 is executed to obtain the mask levels and position information of all the mark graphics in the original layout data and the standard pattern graphics corresponding to each mark graphics according to the mark standard pattern layout library and the mark information file.

[0111] At this point, the mask levels and position information of all the mark patterns in the cutting lane layout data, as well as the standard pattern patterns corresponding to the mark patterns, are acquired according to the original layout data.

[0112] Execute step S105, and establish a plurality of preset windows at corresponding positions of the corresponding mask layers in the cutting path layout data according to the mask layers and position information of all the marking graphics in the original layout data, and the standard pattern graphics corresponding to each marking graphics, wherein one marking graphic corresponds to one preset window.

[0113] In this embodiment, the method of establishing a plurality of preset windows at corresponding positions of the mask layer corresponding to the cutting path layout data further includes: determining the size of the preset window according to the range of the forbidden area around the standard pattern corresponding to each of the mark patterns. Here, the size of the forbidden area determines the size of the preset window.

[0114] For illustration, Fig.11 A preset window W1 corresponding to the first mark graphic Mark-M-1, a preset window W2 corresponding to the second mark graphic Mark-M-2, and a preset window W3 corresponding to the third mark graphic Mark-M-3 are given.

[0115] In this embodiment, the position information of the peripheral cutting road area is obtained based on the exposure range, the width of the cutting road area and the stepping distance; based on the position information of the peripheral cutting road area, a plurality of first sub-windows located in the peripheral cutting road area are obtained from a plurality of preset windows; based on the stepping distance and each of the first sub-windows, a second sub-window is obtained in the peripheral cutting road area, and the second sub-window and the first sub-window are located on opposite sides of the exposure unit.

[0116] For details, please continue to refer to Fig.10 and Fig.11 The second mark pattern Mark-M-2 and the third mark pattern Mark-M-3 are both in the peripheral cutting road area B2 (corresponding to Figure 3In the peripheral cutting road area b2), the preset windows W2 and W3 are two first sub-windows therein, and the second sub-window WII corresponding to the preset window W2 and the second sub-window WIII corresponding to the preset window W3 can be obtained.

[0117] Step S106 is executed to obtain the marking graphics in each of the preset windows in the cutting lane layout data.

[0118] In this embodiment, a first sub-marker graphic in the first sub-window is also obtained, and a second sub-marker graphic in the corresponding second sub-window is obtained.

[0119] For illustration, continue to refer to Fig.11 When the mark graphics in the mask data are all correct, the first mark graphic Mark-M-1 can be obtained in the preset window W1, the second mark graphic Mark-M-2 can be obtained in the preset window W2, and the third mark graphic Mark-M-3 can be obtained in the preset window W3. Otherwise, the corresponding mark graphic will not be obtained, or an incorrect mark graphic will be obtained.

[0120] Step S107 is executed to obtain a judgment result of whether the mark graphic in the preset window is correct according to the mark graphic in the preset window and the corresponding standard pattern graphic.

[0121] At this point, by performing data conversion on the cutting path mask data in the mask data, the cutting path layout data that can be processed by the layout editing tool is obtained, and according to the mask level and position information of all the marking graphics in the original layout data, and the standard style graphics corresponding to each of the marking graphics, a number of preset windows are established at the corresponding positions of the corresponding mask levels in the cutting path layout data, and by comparing the marking graphics in the preset windows with the corresponding standard style graphics, it is determined whether the marking graphics in the mask data are correct. The above determination is based on a simple data conversion of the cutting path mask data in the mask data. The mask data is the final data before plate making. The inspection method can be automated, which is beneficial to saving production costs and improving the accuracy of marking graphic inspection.

[0122] For details, please refer to Fig.10 and Fig.11 , compare the mark pattern in the preset window with the corresponding standard pattern pattern to determine whether the mark pattern is correct. For example, compare the mark pattern in the preset window W1 with the corresponding first standard pattern pattern 201. If they are consistent, the mark pattern is determined to be correct, otherwise, the mark pattern is determined to be incorrect.

[0123] In this embodiment, the method for obtaining a judgment result of whether the marked graphic in the preset window is complete based on the marked graphic in the preset window and the corresponding standard style graphic includes: performing an "exclusive OR logic" operation on the marked graphic and the corresponding standard style graphic, if the operation result has no graphic output, it means that the marked graphic is correct, and if the operation result has a graphic, it means that the marked graphic is incorrect.

[0124] To further illustrate, Fig.12 and Fig.13 A schematic diagram of the "XOR logic" operation is given. Fig.13 In the example, after the "XOR logic" operation is performed on the marked graphic and the corresponding standard pattern graphic, the operation result has no graphic output, indicating that the marked graphic is correct; and Fig.13 In the embodiment, after the marked graphic and the corresponding standard pattern graphic are subjected to an "XOR logic" operation, the operation result has a graphic output indicating that the marked graphic is incorrect.

[0125] In this embodiment, it is also determined whether the area where the mark pattern exists will be repeatedly exposed according to the first sub-mark pattern and the corresponding second sub-mark pattern.

[0126] Here, the above-mentioned marking pattern inspection method can accurately locate which specific marking pattern has the repeated exposure anomaly, which is helpful to improve the accuracy of marking pattern inspection.

[0127] In this embodiment, determining whether the area where the mark pattern exists will be repeatedly exposed based on the first sub-mark pattern and the corresponding second sub-mark pattern includes: performing an "AND logic" operation on the first sub-mark pattern and the corresponding second sub-mark pattern, if the operation result has no graphic, it means that no area of ​​the mark pattern is repeatedly exposed, and if the operation result has a graphic, it means that the area where the mark pattern exists will be repeatedly exposed.

[0128] To further illustrate, Fig.14 and Fig.15 A schematic diagram of the "AND logic" operation is given. Fig.14 In the example, the first sub-mark pattern and the corresponding second sub-mark pattern are subjected to an AND logic operation. The absence of a pattern in the operation result indicates that no region of the mark pattern is repeatedly exposed; and Fig.15 In the embodiment, an AND logic operation is performed on the first sub-mark pattern and the corresponding second sub-mark pattern, and the operation result has a graphic representation that the area where the mark pattern exists will be repeatedly exposed.

[0129] Although the present invention is disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the scope defined by the claims.

Claims

1. A method for inspecting a marking pattern in mask data, characterized in that: include: Providing mask data, the mask data including data of several mask levels, each of the mask levels corresponding to several repeated exposure units in the photolithography process, each of the mask levels including several chip areas and cutting road areas, the cutting road areas having several marking patterns, the mask data including cutting road mask data and chip mask data, the cutting road mask data being data of the cutting road areas of several mask levels, the chip mask data being data of several chip areas of several mask levels, and the mask data being obtained after processing the original layout data; Acquire the cutting path mask data from the mask data as data to be processed; The data to be processed is converted, wherein the data conversion includes format conversion, so that the data to be processed can be processed by a layout editing tool, and the magnification, mirror image, and reference coordinate system of the data are consistent with the original layout data, and the cutting path layout data is obtained; According to the original layout data, obtaining the mask level and position information of all the marking patterns in the cutting path layout data, and the standard pattern patterns corresponding to each of the marking patterns; According to the mask levels and position information of all the marking patterns in the original layout data, and the standard pattern patterns corresponding to the marking patterns, a plurality of preset windows are established at corresponding positions of the mask levels in the cutting lane layout data, wherein one marking pattern corresponds to one preset window; In the cutting path layout data, obtaining the marking graphics in each of the preset windows; According to the marked graphic in the preset window and the corresponding standard pattern graphic, a judgment result of whether the marked graphic in the preset window is correct is obtained.

2. The method for inspecting a mark pattern in mask data according to claim 1, wherein: The method for obtaining a judgment result of whether the marked graphic in the preset window is complete based on the marked graphic in the preset window and the corresponding standard style graphic includes: performing an "exclusive OR logic" operation on the marked graphic and the corresponding standard style graphic, if the operation result has no graphic output, it means that the marked graphic is correct, and if the operation result has a graphic, it means that the marked graphic is incorrect.

3. The method for inspecting a mark pattern in mask data according to claim 1, wherein: The method for obtaining the mask levels and position information of all the mark graphics in the cutting path layout data and the standard pattern graphics corresponding to each mark graphics according to the original layout data includes: providing a mark standard pattern layout library, the standard pattern layout library includes a plurality of mark layouts, each mark layout includes a standard pattern graphic, and the styles of the standard pattern graphics in different mark layouts are different; providing a mark information file, the mark information file includes the mask levels and position information of all the mark graphics in the original layout data, the standard pattern graphics corresponding to each mark graphics, the position information includes coordinates, and geometric transformation information relative to the standard pattern graphics; according to the mark standard pattern layout library and the mark information file, obtaining the mask levels and position information of all the mark graphics in the original layout data and the standard pattern graphics corresponding to each mark graphics.

4. The method for inspecting a mark pattern in mask data according to claim 3, wherein: The coordinates are coordinates of the coordinate origin of the mark pattern graphic corresponding to the mark graphic relative to the center of the exposure unit.

5. The method for inspecting a mark pattern in mask data according to claim 3, wherein: The geometric transformation information includes one or both of rotation and mirroring.

6. The method for inspecting a mark pattern in mask data according to claim 3, wherein: The marking layout also includes a prohibited area, and the standard pattern graphic is located in the prohibited area; the method of establishing a plurality of preset windows at the position of the mask layer corresponding to the cutting path layout data also includes: determining the size of the preset window according to the range of the prohibited area around the standard pattern graphic corresponding to each of the marking graphics.

7. The method for inspecting a mark pattern in mask data according to claim 3, wherein: The cutting road area includes a central cutting road area and a peripheral cutting road area, the peripheral cutting road area surrounds a number of the chip areas and the central cutting road area, and the central cutting road area is located between adjacent chip areas; the marking information file also includes: the exposure range corresponding to each of the mask levels, the width of the cutting road area and the stepping distance.

8. The method for inspecting a mark pattern in mask data according to claim 7, wherein: The method for establishing a plurality of preset windows also includes: obtaining the position information of the peripheral cutting road area according to the exposure range, the width of the cutting road area and the stepping distance; obtaining a plurality of first sub-windows located in the peripheral cutting road area from a plurality of the preset windows according to the position information of the peripheral cutting road area; obtaining a second sub-window in the peripheral cutting road area according to the stepping distance and each of the first sub-windows, the second sub-window and the first sub-window being located on opposite sides of the exposure unit.

9. The method for inspecting a mark pattern in mask data according to claim 8, wherein: The method further includes: acquiring a first sub-mark pattern in a first sub-window, and acquiring a second sub-mark pattern in a corresponding second sub-window; and determining whether the area where the mark pattern exists will be repeatedly exposed according to the first sub-mark pattern and the corresponding second sub-mark pattern.

10. The method for inspecting a mark pattern in mask data according to claim 9, wherein: The method of determining whether the area where the mark pattern exists will be repeatedly exposed based on the first sub-mark pattern and the corresponding second sub-mark pattern includes: performing an "AND logic" operation on the first sub-mark pattern and the corresponding second sub-mark pattern, if the operation result has no graphic, it means that no area of ​​the mark pattern is repeatedly exposed, and if the operation result has a graphic, it means that the area where the mark pattern exists will be repeatedly exposed.

11. The method for inspecting a mark pattern in mask data according to claim 1, wherein: The mask data includes some production-level electron beam exposure system data.

12. The method for inspecting a mark pattern in mask data according to claim 11, wherein: The method for acquiring the cutting line mask data from the mask data includes: retaining a number of the production-level electron beam exposure system data corresponding to the cutting line mask data from the mask data, and deleting the remaining number of the production-level electron beam exposure system data.

13. The method for inspecting a mark pattern in mask data according to claim 11, wherein: The mask data also includes a text file, which includes the layer information of the mask and the calling method of several production-level electron beam exposure system data corresponding to the masks of each layer; the method of obtaining the cutting path mask data from the mask data includes: retaining the calling content of several production-level electron beam exposure system data corresponding to the cutting path mask data from the text file, and deleting the remaining calling content.

14. The method for inspecting a mark pattern in mask data according to claim 13, wherein: The cutting path layout data includes the layer number of each layer; before establishing the preset window, it also includes: establishing the corresponding relationship between the layer number and the layer name according to the layer information in the text file.

15. The method for inspecting a mark pattern in mask data according to claim 1, wherein: The format conversion includes converting the format of the mask data into a GDSII format, an OASIS format or a GDS format.

16. The method for inspecting a mark pattern in mask data according to claim 1, wherein: The data conversion also includes geometric transformation operation processing; the geometric transformation operation processing includes one or more of magnification operation, mirror operation, and coordinate conversion operation.

17. The method for inspecting a mark pattern in mask data according to claim 16, wherein: The magnification factor of the size of the pattern on the mask compared to the size of the pattern on the original layout is m, and the magnification operation includes performing a 1 / m magnification operation on the mask data.

18. The method for inspecting a mark pattern in mask data according to claim 16, wherein: The mask data and the original layout data are drawn in different ways relative to the light-shielding surface of the mask, and the mirroring operation includes performing Y-axis mirroring processing on the mask data.

19. The method for inspecting a mark pattern in mask data according to claim 16, wherein: The mask data refers to a first coordinate system, the original layout data refers to a second coordinate system, the first coordinate system and the second coordinate system are different, and the coordinate conversion operation converts the coordinates in the data to be processed from the first coordinate system to the coordinates in the second coordinate system.

20. The method for inspecting a mark pattern in mask data according to claim 1, wherein: The standard pattern graphics include light-transmitting pattern graphics and light-shielding pattern graphics.

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