Continuous feeding zone melting furnace

Abstract

The invention belongs to the technical field of suspension zone-melting single crystal furnaces, and particularly relates to a continuous feeding zone-melting furnace which comprises a crystal growth furnace chamber, a silicon tube arranged at the upper end in the crystal growth furnace chamber, a bottom quartz support fixedly connected to the lower end of the silicon tube, a first cylinder fixedly connected to the interior of the crystal growth furnace chamber, and an induction coil fixedly connected to the middle of the first cylinder. The induction coil is located on the outer side of the silicon tube, a graphite preheating ring is arranged in the middle of the upper end of the silicon tube, a plurality of water-cooled quartz tubes are arranged on the periphery of the outer side of the silicon tube, seed crystals are arranged at the lower end in the crystal growth furnace chamber in a sliding mode, and a feeding assembly is arranged at the upper end of the crystal growth furnace chamber and comprises a feeding bin arranged at the upper end of the crystal growth furnace chamber; the outer side of the silicon tube is cooled through the water-cooled quartz tube, a layer of self-shaped silicon crucible is formed between molten particle silicon and unmolten particle silicon, and the problem that pollution is possibly caused by contact between the particle silicon and the bottom quartz support is solved.

Description

Technical Field

[0001] The invention belongs to the technical field of suspended zone melting single crystal furnaces, in particular to a zone melting furnace with continuous feeding. Background Art

[0002] The floating zone melting single crystal furnace is a device used for floating zone melting purification and floating single crystal growth. It is mainly used for the purification of zone melting silicon and single crystal growth, and has been used in the industrial production of semiconductor materials. The floating zone melting single crystal furnace structure consists of two parts, namely the furnace chamber and the mechanical transmission part, as well as the electrical control cabinet and the high-frequency generator part. At present, the diameter of silicon single crystals produced by the zone melting method is relatively small. In addition, the zone melting furnace has high requirements for impurity control of the crystal rod. For the above reasons, the production cost of silicon single crystals by the zone melting method is relatively high.

[0003] A patent with the announcement number CN208440720U discloses a continuous production zone melting furnace, which can realize zone melting purification of multiple raw material crystal rods in one vacuum pumping, avoiding frequent vacuum pumping, thereby reducing energy consumption and inert gas consumption, saving costs. It also saves vacuum pumping time and improves production efficiency; the setting of the raw material switching device and the product picking device facilitates control and operation, which is conducive to further improving production efficiency.

[0004] In the above-mentioned prior art, when the zone melting method is used to heat the granular silicon, since the zone melting method does not use a crucible, the diameter of the single crystal is mainly limited by the size of the heat source and the size of the raw material rod. At present, the diameter of the silicon single crystal produced by the zone melting method is generally between 4 and 6 inches, which cannot meet the demand for large-size silicon wafers. Using a crucible to heat the granular silicon can process larger crystalline silicon rods, but when using a crucible to heat the granular silicon, the crucible may contaminate the granular silicon and affect the purity of the crystalline silicon rod.

[0005] To this end, the present invention provides a continuously fed zone furnace. Summary of the invention

[0006] In order to make up for the deficiencies of the prior art, at least one technical problem raised in the background technology is solved.

[0007] The technical solution adopted by the present invention to solve its technical problems is: the continuous feeding zone melting furnace described in the present invention comprises a crystal growth furnace chamber, a silicon tube is provided at the upper end of the interior of the crystal growth furnace chamber, a bottom quartz support is fixedly connected to the lower end of the silicon tube, a heating device is provided on the outer side of the silicon tube, the heating device comprises a first cylinder fixedly connected to the interior of the crystal growth furnace chamber, an induction coil is fixedly connected to the middle part of the first cylinder, the induction coil is located on the outer side of the silicon tube, a graphite preheating ring is provided in the middle part of the upper end of the silicon tube, a plurality of water-cooled quartz tubes are provided around the outer side of the silicon tube, a seed crystal is slidably provided at the lower end of the interior of the crystal growth furnace chamber, a feeding assembly is provided at the upper end of the crystal growth furnace chamber, the feeding assembly comprises a feeding bin provided at the upper end of the crystal growth furnace chamber, a conveying assembly is fixedly connected to the lower end of the feeding bin, the conveying assembly comprises a feeding pipe installed at the lower end of the feeding bin, and the feeding pipe is located at the upper end of the silicon tube.

[0008] Preferably, a small hole is opened at the lower end of the bottom quartz support, and a high-frequency induction coil is provided at the lower end of the bottom quartz support, and the high-frequency induction coil is fixedly connected to the interior of the crystal growth furnace chamber.

[0009] Preferably, a first cylindrical block is slidably provided at the lower end of the interior of the crystal growth furnace chamber, the first cylindrical block is used to install the seed crystal, a first circular plate is fixedly connected to the upper end of the crystal growth furnace chamber, and a sealing door is rotatably provided on one side of the lower end of the crystal growth furnace chamber.

[0010] Preferably, a vortex plate is fixedly connected to the lower end of the interior of the feeding bin, the interior of the vortex plate is a hollow structure, and a plurality of rectangular holes are respectively opened on the side walls.

[0011] Preferably, a sponge sheet is installed inside the vortex plate.

[0012] Preferably, a second circular plate is fixedly connected to the upper end of the feeding bin, a material shifting assembly is provided at the lower end of the second circular plate, the material shifting assembly includes a second cylindrical block rotatably connected to the lower end of the second circular plate, a rectangular tube is slidably penetrated through the middle of the second cylindrical block, a second rectangular bar is provided on one side of the lower end of the rectangular tube, the second rectangular bar is located in the gap of the vortex plate, a third cylinder is fixedly connected to the lower end of the second cylindrical block, and a second cylindrical rod is slidably provided inside the lower end of the third cylinder.

[0013] Preferably, the second rectangular bar is rotated through one side of the lower end of the rectangular tube through a pin shaft, the second rectangular bar is fixedly connected to a gear through the pin shaft, a rack is provided inside the rectangular tube, the rack is fixedly connected to the second circular plate through a second rectangular block, the gear is meshed with the rack, and the rectangular tube can slide on the outside of the rack.

[0014] Preferably, a first rectangular block is fixedly connected to the middle part of the outer side of the feeding tube, first cylindrical rods are respectively fixedly connected to both ends of the first rectangular block, first rectangular bars are respectively rotatably connected to the opposite ends of the two first cylindrical rods, and the first rectangular bars are fixedly connected to the side wall of the crystal growth furnace chamber.

[0015] Preferably, a vibrating feeder is installed at the lower end of the feeding bin, and telescopic tubes are fixedly connected to both ends of the feeding tube. The telescopic tube at the upper end is fixedly connected to the vibrating feeder through a conical tube, and the telescopic tube at the lower end is fixedly connected to the first circular plate through a conical tube.

[0016] Preferably, a feed pipe is fixedly connected to one side of the feeding bin, the feeding bin is fixedly connected to the crystal growth furnace chamber through an L-shaped bar, a third circular plate is fixedly connected to the lower end of the third cylinder, and the third circular plate is located in the middle of the upper end of the vortex plate.

[0017] The beneficial effects of the present invention are as follows: 1. The continuous feeding zone melting furnace described in the present invention places granular silicon into a silicon tube and a bottom quartz tray, then turns on the induction coil to increase the temperature of the graphite preheating ring. The graphite preheating ring can melt the granular silicon in the middle of the silicon tube from the inside to the outside and from the top to the bottom, and the outer side of the silicon tube is cooled by a water-cooled quartz tube to form a self-molding silicon crucible between the melted granular silicon and the unmelted granular silicon, thereby solving the problem of possible contamination caused by the contact between the granular silicon and the bottom quartz tray.

[0018] 2. The continuous feeding zone furnace described in the present invention places granular silicon into a feeding bin, allows the granular silicon to fall into the gap of the vortex plate, and then connects the air pump to the vortex plate. By starting the air pump, negative pressure is generated in the vortex plate. When there is moisture on the surface of the granular silicon, the moisture on the surface of the granular silicon can enter the interior of the vortex plate through the rectangular holes and be absorbed by the sponge sheet. At the same time, the second rectangular bar is driven to slide in the gap of the vortex plate, and the granular silicon is moved to fully dry the moisture on the surface of the granular silicon. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] The present invention will be further described below in conjunction with the accompanying drawings.

[0020] Figure 1 is a three-dimensional diagram of the first embodiment of the present invention; Figure 2 is a schematic cross-sectional view of a crystal growth furnace chamber; Figure 3 is a schematic cross-sectional view of a first cylinder; Figure 4 is a schematic cross-sectional view of the feeding bin; Figure 5 is a schematic cross-sectional view of a vortex plate; Figure 6 is a schematic cross-sectional view of the second circular plate; Figure 7 is a schematic diagram of a rectangular cylinder cross section; Figure 8 It is a schematic diagram of the location of the feeding bin; In the figure: 1, crystal growth furnace chamber; 11, first cylinder; 12, bottom quartz support; 13, water-cooled quartz tube; 14, induction coil; 15, graphite preheating ring; 16, silicon tube; 17, high-frequency induction coil; 18, seed crystal; 181, first cylindrical block; 19, first round plate; 191, sealing door; 2, feeding bin; 21, feeding tube; 211, telescopic tube; 212, conical cylinder; 213, first rectangular block; 214, first Cylindrical rod; 215, first rectangular bar; 22, feed pipe; 23, L-shaped bar; 24, vibrating feeder; 25, vortex plate; 251, sponge sheet; 252, rectangular hole; 26, second circular plate; 261, second cylindrical block; 262, third cylinder; 263, second cylindrical rod; 264, rectangular cylinder; 265, third circular plate; 27, second rectangular bar; 272, gear; 273, rack; 274, second rectangular block. DETAILED DESCRIPTION

[0021] In order to make the technical means, creative features, objectives and effects achieved by the present invention easy to understand, the present invention is further explained below in conjunction with specific implementation methods. Embodiment 1

[0022] like Figure 1-Figure 3 As shown, a continuous feeding zone melting furnace described in an embodiment of the present invention includes a crystal growth furnace chamber 1, a silicon tube 16 is provided at the upper end of the crystal growth furnace chamber 1, a bottom quartz support 12 is fixedly connected to the lower end of the silicon tube 16, a heating device is provided on the outer side of the silicon tube 16, the heating device includes a first cylinder 11 fixedly connected to the inside of the crystal growth furnace chamber 1, an induction coil 14 is fixedly connected to the middle of the first cylinder 11, the induction coil 14 is located on the outer side of the silicon tube 16, a graphite preheating ring 15 is provided in the middle of the upper end of the silicon tube 16, a plurality of water-cooled quartz tubes 13 are provided around the outer side of the silicon tube 16, a seed crystal 18 is slidably provided at the lower end of the crystal growth furnace chamber 1, a feeding assembly is provided at the upper end of the crystal growth furnace chamber 1, the feeding assembly includes a feeding bin 2 provided at the upper end of the crystal growth furnace chamber 1, a conveying assembly is fixedly connected to the lower end of the feeding bin 2, the conveying assembly includes a feeding pipe 21 installed at the lower end of the feeding bin 2, and the feeding pipe 21 is located at the upper end of the silicon tube 16.

[0023] Specifically, a crucible is needed when processing larger crystalline silicon rods, but the presence of granular silicon will affect the thermal stability and mechanical strength of the quartz crucible. The chemical reaction between the granular silicon and the quartz crucible will make the quartz crucible gradually brittle and reduce the thermal stability. The friction of the granular silicon inside the quartz crucible may produce impurities. Therefore, when using the quartz crucible, it is necessary to pay attention to its contact with the granular silicon to prevent contamination of the granular silicon. When using the furnace in this area, the granular silicon is placed in the silicon tube 16 and the bottom quartz support 12, and then the power is turned on to increase the temperature of the graphite preheating ring 15. The graphite preheating ring 15 can begin to melt the granular silicon in the middle of the silicon tube 16 from the inside to the outside and from the top to the bottom. Then, the water-cooled quartz tube 13 is kept in a cooling state at all times by introducing external water circulation. The water-cooled quartz tube 13 is cooled on the outside of the silicon tube 16. The granular silicon near the silicon tube 16 cooled by the water-cooled quartz tube 13 cannot be melted, and a self-molding silicon crucible is formed between the molten granular silicon and the unmelted granular silicon, so that the flow of the melt is stable and the granular silicon is prevented from contacting with the bottom quartz support 12 to cause pollution. The seed crystal 18 is then driven to move to the lower end of the melted granular silicon to perform operations such as seeding and shouldering to form a crystalline silicon rod. During the processing, granular silicon is added to the feeding bin 2 and then enters the silicon tube 16 through the feeding tube 21. Feeding and melting can be continued to process larger crystalline silicon rods. The outer side of the silicon tube 16 is cooled by the water-cooled quartz tube 13 to form a self-molding silicon crucible between the molten granular silicon and the unmelted granular silicon, thereby solving the problem of possible pollution caused by contact between the granular silicon and the bottom quartz support 12.

[0024] like Figure 2-Figure 3 As shown, a small hole is opened at the lower end of the bottom quartz support 12 , and a high-frequency induction coil 17 is provided at the lower end of the bottom quartz support 12 . The high-frequency induction coil 17 is fixedly connected to the inside of the crystal growth furnace chamber 1 .

[0025] Specifically, a small hole is provided at the lower end of the bottom quartz tray 12 that is smaller than the diameter of the granular silicon particles, so as to prevent the granular silicon from falling out when the granular silicon is poured into the bottom quartz tray 12. When the granular silicon at the bottom of the bottom quartz tray 12 begins to melt, the high-frequency induction coil 17 is turned on to control the silicon melt to prevent it from falling freely. The subsequent welding, seeding and shoulder release operations are the same as those of traditional zone melting silicon crystal growth.

[0026] like Figure 2 As shown, a first cylindrical block 181 is slidably provided at the lower end of the crystal growth furnace chamber 1, and the first cylindrical block 181 is used to install the seed crystal 18. A first circular plate 19 is fixedly connected to the upper end of the crystal growth furnace chamber 1, and a sealing door 191 is rotatably provided at one side of the lower end of the crystal growth furnace chamber 1.

[0027] Specifically, during the crystal growth stage, the seed crystal 18 is first installed on the upper end of the first cylindrical block 181, and then the first cylindrical block 181 is driven to slide downward to drive the seed crystal 18 to draw out the melt, and then the seed crystal 18 is continuously moved downward to drive the crystal growth, so that the crystal rod is located at the lower end of the crystal growth furnace chamber 1, and then the sealing door 191 is driven to rotate to expose the crystal rod to the outside, and the crystal rod can be taken out.

[0028] like Figure 4-Figure 5 As shown, a vortex plate 25 is fixedly connected to the lower end of the inner part of the feeding bin 2. The inner part of the vortex plate 25 is a hollow structure, and a plurality of rectangular holes 252 are respectively opened on the side walls.

[0029] Specifically, when adding materials, it is necessary to ensure that the granular silicon remains dry to prevent the risk of reaction and explosion caused by moisture or other impurities. The granular silicon is placed in the feeding bin 2, and then the granular silicon falls into the gap of the vortex plate 25. The air pump is then connected to the vortex plate 25, and a negative pressure is generated in the vortex plate 25 by starting the air pump. When there is moisture on the surface of the granular silicon, the moisture on the surface of the granular silicon can enter the interior of the vortex plate 25 from the rectangular holes 252, so that the granular silicon can be evenly distributed in the gap of the vortex plate 25, and the drying speed is increased.

[0030] like Figure 5 As shown, a sponge sheet 251 is installed inside the vortex plate 25 .

[0031] Specifically, when the moisture on the surface of the granular silicon is sucked into the interior of the vortex plate 25 , the moisture is absorbed by the sponge sheet 251 , and at the same time, the granular silicon or impurities are prevented from entering the interior of the vortex plate 25 .

[0032] like Figure 6 As shown, a second circular plate 26 is fixedly connected to the upper end of the feeding bin 2, and a material shifting assembly is provided at the lower end of the second circular plate 26. The material shifting assembly includes a second cylindrical block 261 rotatably connected to the lower end of the second circular plate 26, a rectangular tube 264 is slidably penetrated through the middle of the second cylindrical block 261, a second rectangular bar 27 is provided on one side of the lower end of the rectangular tube 264, and the second rectangular bar 27 is located in the gap of the vortex plate 25, and a third cylinder 262 is fixedly connected to the lower end of the second cylindrical block 261, and a second cylindrical rod 263 is slidably provided inside the lower end of the third cylinder 262.

[0033] Specifically, by driving the second cylindrical block 261 to rotate, the rectangular tube 264 is driven to rotate, and the rectangular tube 264 drives the second rectangular bar 27 to slide along the gap of the vortex plate 25. The sliding of the second rectangular bar 27 drives the rectangular tube 264 to slide in the middle of the second cylindrical block 261, which can move the granular silicon in the gap of the vortex plate 25, and has a better effect on absorbing moisture on the surface of the granular silicon.

[0034] like Figure 7As shown, the second rectangular bar 27 is rotated through one side of the lower end of the rectangular tube 264 by a pin shaft, and the second rectangular bar 27 is fixedly connected to a gear 272 by a pin shaft. A rack 273 is provided inside the rectangular tube 264, and the rack 273 is fixedly connected to the second circular plate 26 through a second rectangular block 274. The gear 272 is engaged with the rack 273, and the rectangular tube 264 can slide on the outside of the rack 273.

[0035] Specifically, when the second cylindrical block 261 is driven to rotate, the second rectangular bar 27 slides along the gap of the vortex plate 25, driving the rectangular tube 264 to slide in the middle of the second cylindrical block 261. While the rectangular tube 264 slides in the middle of the second cylindrical block 261, it drives the gear 272 to slide on one side of the rack 273, so that the gear 272 drives the second rectangular bar 27 to rotate. While driving the second rectangular bar 27 to slide in the gap of the vortex plate 25, the second rectangular bar 27 can be rotated, thereby fully moving the granular silicon in the gap of the vortex plate 25.

[0036] like Figure 8 As shown, a first rectangular block 213 is fixedly connected to the middle of the outer side of the feeding tube 21, and first cylindrical rods 214 are respectively fixedly connected to both ends of the first rectangular block 213. The opposite ends of the two first cylindrical rods 214 are respectively rotatably connected to first rectangular bars 215, and the first rectangular bars 215 are fixedly connected to the side wall of the crystal growth furnace chamber 1.

[0037] Specifically, during the feeding process, it is necessary to control the consumption rate of silicon single crystal growth and the speed of replenishing granular silicon into the bottom quartz tray 12 to be the same. When processing crystal rods of different sizes, it is necessary to adjust the speed at which the granular silicon enters the bottom quartz tray 12. The first rectangular block 213 is driven to rotate by driving the first cylindrical rod 214, and the first rectangular block 213 drives the feeding tube 21 to rotate. The closer the angle of the feeding tube 21 is to the vertical state, the faster the feeding speed.

[0038] like Figure 4 , Figure 8 As shown, a vibrating feeder 24 is installed at the lower end of the feeding bin 2, and telescopic tubes 211 are fixedly connected at both ends of the feeding tube 21. The telescopic tube 211 at the upper end is fixedly connected to the vibrating feeder 24 through a conical tube 212, and the telescopic tube 211 at the lower end is fixedly connected to the first circular plate 19 through a conical tube 212.

[0039] Specifically, when the feeding tube 21 is driven to rotate, the telescopic tubes 211 at both ends will be extended and retracted. At the same time, the conical tube 212 is made of rubber and has a certain elasticity to prevent excessive pulling when the feeding tube 21 is rotated, which may cause the telescopic tube 21 to fall off. The speed of the granular silicon entering the silicon tube 16 is adjusted by driving the feeding tube 21 to rotate. The vibrating feeder 24 is driven by a motor to vibrate the feeding tube 21. When fast feeding is required, the vibration frequency of the vibrating feeder 24 is higher, and when slow feeding is required, the vibration frequency of the vibrating feeder 24 is lower. Embodiment 2

[0040] like Figure 4 , Figure 8 As shown, compared with Example 1, another embodiment of the present invention is: a feeding pipe 22 is fixedly connected to one side of the feeding bin 2, the feeding bin 2 is fixedly connected to the crystal growth furnace chamber 1 through an L-shaped bar 23, and the lower end of the third cylinder 262 is fixedly connected to the third circular plate 265, and the third circular plate 265 is located in the middle of the upper end of the vortex plate 25.

[0041] Specifically, granular silicon is added into the feeding bin 2 through the feeding pipe 22, so that the granular silicon is located on one side of the vortex plate 25 when entering the feeding bin 2, and the third circular plate 265 is located in the middle of the upper end of the vortex plate 25 to prevent the granular silicon from directly entering the silicon tube 16 from the vortex plate 25 without being absorbed by water.

[0042] Working principle: Add granular silicon into the feeding bin 2 through the feeding pipe 22, so that the granular silicon is located on one side of the vortex plate 25 when entering the feeding bin 2. The third circular plate 265 is located in the middle of the upper end of the vortex plate 25 to prevent the granular silicon from directly entering the silicon tube 16 from the vortex plate 25 without being absorbed by water; the granular silicon falls into the gap of the vortex plate 25, and then the air pump is connected to the vortex plate 25. By starting the air pump, negative pressure is generated in the vortex plate 25. When there is moisture on the surface of the granular silicon, the moisture on the surface of the granular silicon can enter the inside of the vortex plate 25 from the rectangular hole 252, so that the granular silicon can be evenly distributed in the vortex plate 25. The moisture in the gap is absorbed by the sponge sheet 251, and the second cylindrical block 261 is driven to rotate. When the second rectangular strip 27 slides along the gap of the vortex plate 25, the rectangular tube 264 is driven to slide in the middle of the second cylindrical block 261. When the rectangular tube 264 slides in the middle of the second cylindrical block 261, it drives the gear 272 to slide on one side of the rack 273, so that the gear 272 drives the second rectangular strip 27 to rotate. When the second rectangular strip 27 is driven to slide in the gap of the vortex plate 25, the second rectangular strip 27 can be rotated, and the granular silicon in the gap of the vortex plate 25 can be fully moved. Then the granular silicon enters the silicon tube 16 and the bottom quartz support 12, and then the power is turned on to increase the temperature of the graphite preheating ring 15. The graphite preheating ring 15 can melt the granular silicon in the middle of the silicon tube 16 from the inside to the outside and from the top to the bottom. Then the water-cooled quartz tube 13 is kept in a cooling state by introducing external water circulation. The water-cooled quartz tube 13 cools the outer side of the silicon tube 16. The granular silicon near the silicon tube 16 cooled by the water-cooled quartz tube 13 cannot melt. A layer of self-molding silicon crucible will be formed between the melted granular silicon and the unmelted granular silicon, which stabilizes the flow of the melt and avoids contamination caused by contact between the granular silicon and the bottom quartz support 12. Then the seed crystal 18 is driven to move to the lower end of the melted granular silicon, and operations such as seeding and shouldering are performed to form a crystalline silicon rod.

[0043] The above shows and describes the basic principles, main features and advantages of the present invention. It should be understood by those skilled in the art that the present invention is not limited to the above embodiments. The above embodiments and descriptions are only for explaining the principles of the present invention. Without departing from the spirit and scope of the present invention, the present invention may have various changes and improvements, which fall within the scope of the present invention. The scope of protection of the present invention is defined by the attached claims and their equivalents.

Claims

1. A continuous feeding zone melting furnace, comprising a crystal growth furnace chamber (1), wherein a silicon tube (16) is provided at the upper end of the interior of the crystal growth furnace chamber (1), a bottom quartz support (12) is fixedly connected to the lower end of the silicon tube (16), and a heating device is provided on the outer side of the silicon tube (16), characterized in that: The heating device comprises a first cylinder (11) fixedly connected inside a crystal growth furnace chamber (1), an induction coil (14) fixedly connected in the middle of the first cylinder (11), the induction coil (14) being located outside a silicon tube (16), a graphite preheating ring (15) being provided in the middle of the upper end of the silicon tube (16), a plurality of water-cooled quartz tubes (13) being provided around the outer side of the silicon tube (16), a seed crystal (18) being slidably arranged at the lower end of the crystal growth furnace chamber (1), a feeding assembly being provided at the upper end of the crystal growth furnace chamber (1), the feeding assembly comprising a feeding bin (2) provided at the upper end of the crystal growth furnace chamber (1), a conveying assembly being fixedly connected at the lower end of the feeding bin (2), the conveying assembly comprising a feeding pipe (21) installed at the lower end of the feeding bin (2), the feeding pipe (21) being located at the upper end of the silicon tube (16).

2. A continuously fed zone melting furnace according to claim 1, characterized in that: A small hole is provided at the lower end of the bottom quartz support (12), and a high-frequency induction coil (17) is provided at the lower end of the bottom quartz support (12). The high-frequency induction coil (17) is fixedly connected to the inside of the crystal growth furnace chamber (1).

3. A continuously fed zone melting furnace according to claim 2, characterized in that: A first cylindrical block (181) is slidably disposed at the lower end of the crystal growth furnace chamber (1), and the first cylindrical block (181) is used to mount a seed crystal (18). A first circular plate (19) is fixedly connected to the upper end of the crystal growth furnace chamber (1), and a sealing door (191) is rotatably disposed on one side of the lower end of the crystal growth furnace chamber (1).

4. A continuously fed zone melting furnace according to claim 3, characterized in that: A vortex plate (25) is fixedly connected to the lower end of the interior of the feeding bin (2); the interior of the vortex plate (25) is a hollow structure, and a plurality of rectangular holes (252) are respectively formed on the side walls.

5. A continuously fed zone melting furnace according to claim 4, characterized in that: A sponge sheet (251) is installed inside the vortex plate (25).

6. A continuously fed zone melting furnace according to claim 5, characterized in that: A second circular plate (26) is fixedly connected to the upper end of the feeding bin (2), and a material shifting assembly is provided at the lower end of the second circular plate (26). The material shifting assembly comprises a second cylindrical block (261) rotatably connected to the lower end of the second circular plate (26), a rectangular tube (264) slidably penetrates the middle of the second cylindrical block (261), a second rectangular bar (27) is provided at one side of the lower end of the rectangular tube (264), and the second rectangular bar (27) is located in the gap of the vortex plate (25), a third cylinder (262) is fixedly connected to the lower end of the second cylindrical block (261), and a second cylindrical rod (263) is slidably provided inside the lower end of the third cylinder (262).

7. A continuously fed zone melting furnace according to claim 6, characterized in that: The second rectangular bar (27) is rotated through one side of the lower end of the rectangular tube (264) via a pin shaft, the second rectangular bar (27) is fixedly connected to a gear (272) via a pin shaft, a rack (273) is provided inside the rectangular tube (264), the rack (273) is fixedly connected to the second circular plate (26) via a second rectangular block (274), the gear (272) is meshed with the rack (273), and the rectangular tube (264) can slide outside the rack (273).

8. A continuously fed zone melting furnace according to claim 7, characterized in that: A first rectangular block (213) is fixedly connected to the middle part of the outer side of the feeding tube (21), and first cylindrical rods (214) are respectively fixedly connected to both ends of the first rectangular block (213), and first rectangular bars (215) are respectively rotatably connected to the opposite ends of the two first cylindrical rods (214), and the first rectangular bars (215) are fixedly connected to the side wall of the crystal growth furnace chamber (1).

9. A continuously fed zone melting furnace according to claim 8, characterized in that: A vibrating feeder (24) is installed at the lower end of the feeding bin (2), and telescopic tubes (211) are respectively fixedly connected to both ends of the feeding tube (21), wherein the telescopic tube (211) at the upper end is fixedly connected to the vibrating feeder (24) via a conical tube (212), and the telescopic tube (211) at the lower end is fixedly connected to the first circular plate (19) via a conical tube (212).

10. A continuously fed zone melting furnace according to claim 9, characterized in that: A feed pipe (22) is fixedly connected to one side of the feeding bin (2), and the feeding bin (2) is fixedly connected to the crystal growth furnace chamber (1) via an L-shaped bar (23). A third circular plate (265) is fixedly connected to the lower end of the third cylinder (262), and the third circular plate (265) is located in the middle of the upper end of the vortex plate (25).

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