Powder surface element-doped diamond-like deposition apparatus

Abstract

Disclosed is a powder surface element doped diamond deposition device, wherein a vibration table provides adjustable vibration, a plasma reaction cavity contains powder and forms a deposition area at the bottom, the plasma reaction cavity is supported by the vibration table to vibrate and disperse the powder, a target base is arranged at the bottom of a sealing cover, a target is installed on the target base, a pulse power source is connected to the target base to provide pulse power to sputter the target to generate doped elements, an inductance coil is installed outside the plasma reaction cavity, the inductance coil is connected to a high-frequency matching circuit to generate high-density plasma in the plasma reaction cavity, a bias electrode is arranged at the lower part of the plasma reaction cavity, and the bias electrode is connected to a low-frequency matching circuit to adjust the ion energy of the deposition area.

Description

TECHNICAL FIELD

[0001] The present application belongs to the technical field of powder surface plasma modification, and particularly relates to a powder surface element doped diamond-like carbon deposition device. BACKGROUND

[0002] Powder materials are widely used in various material preparation processes, and the surface properties of the powder materials are one of the keys to determine the properties of the prepared materials. Diamond-like carbon (DLC) is an amorphous carbon coating, which has good friction and wear properties, high hardness, large elastic modulus, and good chemical stability, and is widely used in material surface modification. The thin film deposition technology on the surface of sheet materials is relatively mature, but due to the inability to ensure the uniformity of the powder surface treatment, these technologies cannot be directly used for diamond-like carbon deposition on the powder. In addition, due to the large specific surface area of the powder, the deposition rate is also extremely demanding during the thin film deposition process.

[0003] By plasma enhanced chemical vapor deposition and appropriate control of the ion kinetic energy of the deposition area, efficient diamond-like carbon deposition can be achieved. In addition, to synergistically improve the optical, electrical, magnetic, and other functions of the material, non-metallic elements such as Si and B or metallic elements such as Cr and Ti are often doped into DLC thin films. However, the corresponding device structure of these process requirements is complex and difficult to be directly added to commonly used powder material processing methods such as fluidized bed technology and rotary furnace.

[0004] The above information disclosed in the background section is only used to enhance the understanding of the background of the present application, and therefore can contain information that does not constitute prior art known to those of ordinary skill in the art in the country. SUMMARY

[0005] In view of the problems in the prior art, the present application provides a powder surface element doped diamond-like carbon deposition device for DLC deposition on the surface of powder materials.

[0006] The purpose of the present application is achieved by the following technical solution, a powder surface element doped diamond-like carbon deposition device comprising:

[0007] a vibration table providing adjustable vibration,

[0008] a plasma reaction cavity accommodating powder and forming a deposition area at the bottom, the plasma reaction cavity being supported on the vibration table to vibrate and disperse the powder,

[0009] a sealing cover provided at the top end of the plasma reaction cavity to seal the plasma reaction cavity,

[0010] a gas inlet provided on the sealing cover and connected to a gas inlet pipeline to introduce carbon source gas,

[0011] an air outlet provided on the sealing cover and connected to a vacuum pump to maintain a predetermined air pressure in the plasma reaction chamber,

[0012] a target base provided at the bottom of the sealing cover, on which a target is mounted,

[0013] a pulse power source connected to the target base to provide pulse power for sputtering the target to generate doped elements,

[0014] a high-frequency matching circuit connected to a high-frequency power source to provide high-frequency power,

[0015] an inductive coil mounted outside the plasma reaction chamber, which is connected to the high-frequency matching circuit to generate high-density plasma in the plasma reaction chamber,

[0016] a low-frequency matching circuit connected to a low-frequency power source to provide low-frequency power,

[0017] a bias electrode provided at the lower part of the plasma reaction chamber, which is connected to the low-frequency matching circuit to adjust the ion energy of the deposition area.

[0018] In the powder surface element doped diamond deposition device, the plasma reaction chamber is a quartz reaction chamber, the upper section of the reaction chamber is a cylinder, and the lower section is a circular table.

[0019] In the powder surface element doped diamond deposition device, the bias electrode is in the form of a circular table to match the lower section of the plasma reaction chamber.

[0020] In the powder surface element doped diamond deposition device, the bias electrode, the low-frequency matching circuit, and the low-frequency power source are sequentially connected to form a low-frequency power circuit, and the working frequency of the low-frequency power circuit is 2-13.56 MHz.

[0021] In the powder surface element doped diamond deposition device, the inductive coil, the high-frequency matching circuit, and the high-frequency power source are sequentially connected to form a high-frequency power circuit, and the working frequency of the high-frequency power circuit is 40.68-60 MHz.

[0022] In the powder surface element doped diamond deposition device, the high-frequency matching circuit is a T-shaped matching circuit, which includes a vacuum adjustable capacitor and a fixed inductor.

[0023] In the powder surface element doped diamond deposition device, the working frequency of the high-frequency power source is 40.68 MHz, and the rated power is 1000 W.

[0024] In the powder surface element doped diamond deposition device, the working frequency of the pulse power source is 200-5000 Hz, and the maximum current is 10 A.

[0025] The vibration table is a variable frequency electromagnetic vibration table, the amplitude is 0-5mm, and the vibration frequency is 0.5-600Hz.

[0026] The inductance coil is a hollow copper coil, and the coil turns are 3 turns.

[0027] Compared with the prior art, the present application has the following advantages: the present application is a full-vibration device capable of flexibly regulating the deposition of the powder surface element doped diamond, and solves the problem of uniformity of the powder surface film deposition. High-density plasma is generated by using high-frequency power combined with inductive coupling, which effectively improves the film deposition rate, so that the powder surface can be effectively coated with a diamond-like coating. Low-frequency power is applied to the bias electrode, so that the ion kinetic energy of the deposition area can be independently adjusted, which is conducive to the regulation of the properties of the diamond-like film. Pulse power sputtering target material is used, which makes the system compatible with metal and non-metal element target materials, providing flexibility in element doping types. BRIEF DESCRIPTION OF DRAWINGS

[0028] Various other advantages and benefits of the present application will become apparent to those of ordinary skill in the art, upon reading the following detailed description of the preferred embodiment. The accompanying drawings are included to provide a better understanding of the preferred embodiment and are not to be considered limitations of the present application. It should be readily understood that the drawings are merely illustrative of the present application and that they, therefore, do not limit the present application, as claimed. Obviously, the drawings described below are only some embodiments of the present application, and other drawings can be obtained from these drawings by those of ordinary skill in the art without creative labor. Moreover, the same reference numbers are used throughout the drawings to represent the same components.

[0029] In the drawings:

[0030] Figure 1 is a structural schematic diagram of a powder surface element doped diamond deposition device according to an embodiment of the present application.

[0031] The present application will be further explained in conjunction with the drawings and embodiments. DETAILED DESCRIPTION

[0032] Specific embodiments of the present application will be described in greater detail below with reference to the drawings. Although specific embodiments of the present application are shown in the drawings, it should be understood that the present application can be implemented in various forms and should not be limited by the embodiments described herein. On the contrary, these embodiments are provided so that the present application can be more thoroughly understood and the scope of the present application can be accurately conveyed to those skilled in the art.

[0033] It should be noted that certain terms are used in the specification and claims to refer to specific components. Those skilled in the art will understand that different terms may be used to refer to the same component. This specification and claims do not distinguish components based on differences in terminology, but rather on differences in function. The terms "comprising" or "including" used throughout the specification and claims are open-ended and should be interpreted as "comprising but not limited to." The following descriptions are preferred embodiments for carrying out the invention; however, these descriptions are for the purpose of understanding the general principles of the specification and are not intended to limit the scope of the invention. The scope of protection of this invention is determined by the appended claims.

[0034] To facilitate understanding of the embodiments of the present invention, further explanations and descriptions will be provided below with reference to the accompanying drawings and specific embodiments. The accompanying drawings do not constitute a limitation on the embodiments of the present invention.

[0035] For better understanding, in one embodiment, such as Figure 1 As shown, in a powder surface element-doped diamond-like carbon deposition device,

[0036] Vibration table 1, which provides adjustable vibration,

[0037] The plasma reaction chamber 3 contains powder and forms a deposition area at the bottom. The plasma reaction chamber 3 is supported by the vibration table 1 to vibrate and disperse the powder.

[0038] A sealing cover 7 is placed at the top of the plasma reaction chamber 3 to seal the plasma reaction chamber 3.

[0039] Air inlet 8 is located on the sealing cover 7 and connected to an air inlet pipe to allow the introduction of carbon source gas.

[0040] An outlet 9 is located on the sealing cover 7 and connected to a vacuum pump to maintain the plasma reaction chamber 3 at a predetermined pressure, preferably between 100 and 300 Pa. At excessively low pressures, the plasma density is low, resulting in insufficient diamond-like carbon deposition rates. At excessively high pressures, discharge initiation is difficult, plasma formation is challenging, and energy loss due to ion collisions is significant. Within the preferred pressure range, a high deposition rate (on the order of 10 nm / s) can be achieved, and plasma formation is readily facilitated.

[0041] The target base 6 is located at the bottom of the sealing cover 7, and the target 5 is mounted on the target base 6.

[0042] A pulsed power source 14 is connected to a target base 6 to provide pulsed power for sputtering the target 5 to generate doped elements.

[0043] a high frequency power source 13 providing high frequency power,

[0044] an inductor coil 4 mounted outside the plasma reaction chamber 3, the inductor coil 4 being connected to the high frequency matching circuit 12 to generate high density plasma in the plasma reaction chamber 3, the inductor coil being connected to the high frequency power source through the high frequency matching circuit. When the high frequency power source is turned on, high frequency current flows through the inductor coil. The high frequency current forms an alternating magnetic field in the reaction chamber, which induces a strong tangential electric field, thus making the discharge in the chamber produce high density plasma.

[0045] a low frequency matching circuit 10 connected to a low frequency power source 11 providing low frequency power,

[0046] a bias electrode 2 arranged at the lower part of the plasma reaction chamber 3, the bias electrode 2 being connected to the low frequency matching circuit 10 to adjust the ion energy of the deposition region.

[0047] In the preferred embodiment of the powder surface element doped diamond deposition device, the plasma reaction chamber 3 is a quartz reaction chamber, the upper section of which is a cylinder and the lower section is a circular truncated cone.

[0048] In the preferred embodiment of the powder surface element doped diamond deposition device, the bias electrode 2 is a circular truncated cone structure to match the lower section of the plasma reaction chamber 3.

[0049] In the preferred embodiment of the powder surface element doped diamond deposition device, the bias electrode 2, the low frequency matching circuit 10 and the low frequency power source 11 are sequentially connected to form a low frequency power circuit, and the working frequency of the low frequency power circuit is 2-13.56 MHz. Too low frequency may result in too dispersed energy distribution of incident ions in the deposition region.

[0050] In the preferred embodiment of the powder surface element doped diamond deposition device, the inductor coil 4, the high frequency matching circuit 12 and the high frequency power source 13 are sequentially connected to form a high frequency power circuit, and the working frequency of the high frequency power circuit is 40.68-60 MHz. Too high frequency may result in undesired wave effects in the plasma.

[0051] In the preferred embodiment of the powder surface element doped diamond deposition device, the high frequency matching circuit 12 is a T-type matching circuit, which includes a vacuum adjustable capacitor and a fixed inductor.

[0052] In the preferred embodiment of the powder surface element doped diamond deposition device, the pulse power source 14 has a working frequency of 200-5000 Hz and a maximum current of 10 A. The frequency of 200 Hz-5000 Hz can effectively avoid the accumulation of electric charge on the surface of the target material (mainly for non-metallic target materials), while avoiding the frequency difference with the radio frequency power source and the coupling effect of the two.

[0053] In the preferred embodiment of the powder surface element doped diamond deposition device, the vibration table 1 is a variable frequency electromagnetic vibration table 1 with an amplitude of 0-5 mm and a vibration frequency of 0.5-600 Hz. Since the system is compatible with complex discharge functions, the amplitude is limited to 0-5 mm. The vibration frequency can be adjusted within a wide range to meet the vibration needs of different powders.

[0054] In the preferred embodiment of the powder surface element doped diamond deposition device, the inductive coil 4 is a hollow copper coil with 3 turns. The coil effectively couples high-frequency power to the plasma, avoiding the uneven distribution of plasma along the axial direction caused by excessive number of coil turns.

[0055] In one embodiment, the target material 5 is compatible with metal or non-metallic target materials 5, thanks to the pulse power source 14 of the sputtering power source. The target material base 6 is made of brass, and the center of the base has a mounting groove for fixing the target material 5.

[0056] In one embodiment, the sealing cover 7 has a rubber sealing ring around the edge to achieve vacuum sealing.

[0057] In one embodiment, the gas inlet 8 and the gas outlet 9 are quick twist gas pipe interfaces that can be sealed to connect a 6 mm hose.

[0058] In one embodiment, the low-frequency power source 11 has a working frequency of 13.56 MHz and a rated power of 500 W.

[0059] In one embodiment, the high-frequency power source 13 has a working frequency of 40.68 MHz and a rated power of 1000 W.

[0060] In one embodiment, the high-frequency matching circuit 12 is a T-shaped matching circuit, which includes two vacuum adjustable capacitors and one fixed inductor.

[0061] In one embodiment, the powder surface element-doped diamond-like deposition device comprises a vibration table 1, a bias electrode 2, a plasma reaction chamber 3, an inductive coil 4, a target material 5, a target material base 6, a sealing cover 7, an air inlet 8, an air outlet 9, a low-frequency matching circuit 10, a low-frequency power source 11, a high-frequency matching circuit 12, a high-frequency power source 13, and a pulse power source 14. The vibration table 1 is built-in with the bias electrode 2 and bears the plasma reaction chamber 3. The bias electrode 2 is arranged below the plasma reaction chamber 3 and is connected to the low-frequency matching circuit 10 to adjust the ion energy in the deposition area. The plasma reaction chamber 3 is arranged on the vibration table 1 and has the sealing cover 7 at the top end. The inductive coil 4 is installed outside the plasma reaction chamber 3 and is connected to the high-frequency matching circuit 12 to generate high-density plasma. The target material 5 is installed on the target material base 6 to provide the doping element. The target material base 6 is glued to the sealing cover 7 to form a whole body for installing the target material. The sealing cover 7 is arranged at the top end of the plasma reaction chamber 3 to seal the plasma reaction chamber 3. The air inlet 8 is connected to an air inlet pipeline to introduce the carbon source gas necessary for diamond-like deposition. The air outlet 9 is connected to a vacuum pump to maintain a low-pressure state in the plasma reaction chamber. The low-frequency matching circuit 10 is connected to the low-frequency power source 11 and the bias electrode 2 to reduce the reflection of radio frequency power in the circuit. The low-frequency power source 11 is connected to the low-frequency matching circuit 10 to provide low-frequency power. The high-frequency matching circuit 12 is connected to the high-frequency power source 13 and the inductive coil 4 to reduce the reflection of radio frequency power in the circuit. The high-frequency power source 13 is connected to the high-frequency matching circuit 12 to provide high-frequency power. The pulse power source 14 is connected to the target material base 6 to provide pulse power to sputter the target material 5.

[0062] Although the embodiments of the present application have been described above with reference to the accompanying drawings, the present application is not limited to the above-described specific embodiments and application fields, and the above-described specific embodiments are merely illustrative and instructive, but not restrictive. Those skilled in the art can make many forms under the guidance of the present specification and without departing from the scope protected by the claims of the present application, which are all included in the protection of the present application.

Claims

1. A powder surface element-doped diamond-like carbon deposition device, characterized in that, It includes, A vibration table that provides adjustable vibration, A plasma reaction chamber, which contains powder and forms a deposition region at the bottom, is supported by the vibrating table to vibrate and disperse the powder. The low-frequency matching circuit is connected to a low-frequency power source that provides low-frequency power. A bias electrode is located at the lower part of the plasma reaction chamber. The bias electrode is connected to a low-frequency matching circuit to adjust the ion energy in the deposition region. A sealing cap is placed at the top of the plasma reaction chamber to seal the plasma reaction chamber. The target base is bonded to the sealing cap as a whole. The target is mounted on the target base to provide doping elements. A pulse power source is connected to the target base to provide pulse power to sputter the target to generate doping elements. A bias electrode, a low-frequency matching circuit, and a low-frequency power source are connected in sequence to form a low-frequency power circuit. The operating frequency of the low-frequency power circuit is 2-13.56 MHz.

2. The powder surface element doping diamond-like carbon deposition apparatus according to claim 1, characterized in that, The plasma reaction chamber is made of quartz material, with a cylinder at the top and a frustum at the bottom.

3. The powder surface element-doped diamond-like carbon deposition apparatus according to claim 2, characterized in that, The bias electrode has a frustum structure to fit into the lower section of the plasma reaction chamber.

4. The powder surface element-doped diamond-like carbon deposition apparatus according to claim 1, characterized in that, It also includes a high-frequency matching circuit.

5. The powder surface element-doped diamond-like carbon deposition apparatus according to claim 4, characterized in that, The high-frequency matching circuit is a T-type matching circuit.

6. The powder surface element-doped diamond-like carbon deposition apparatus according to claim 4, characterized in that, The high-frequency matching circuit includes a vacuum adjustable capacitor and a fixed inductor.

7. The powder surface element-doped diamond-like carbon deposition apparatus according to claim 1, characterized in that, The vibration table is a variable frequency electromagnetic vibration table.

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