ALD-Parylene composite film layer and deposition equipment and deposition method thereof

Abstract

The present invention belongs to the field of plating technology and specifically relates to an ALD-Parylene composite film layer, a deposition device, and a deposition method thereof. By reserving a vacuum gap between a heating plate and the outer wall of a cavity, a barrier is formed to isolate the heating plate from heat conduction to the outside of the cavity as the vacuum degree in the cavity increases during the reaction process, thereby avoiding heat loss caused by direct contact and damage to seals, thereby improving the coating effect. The ALD reaction and the Parylene reaction are combined in the same reaction chamber, and different pipeline designs and time-sharing control are used to form a composite film layer structure of alternating ALD film layers and Parylene film layers on the surface of the substrate. The density of the ALD film layer is conducive to enhancing the water resistance of the film layer and sealing the defects of the original Parylene film layer. The softness of the original coating is maintained, and it will not break when subjected to impact and thermal shock, which is conducive to improving the stability of the film layer.

Description

Technical Field

[0001] The present invention belongs to the technical field of plating equipment, and in particular relates to an ALD-Parylene composite film layer and a deposition equipment and a deposition method thereof. Background Art

[0002] Coating technology is an effective means to improve the surface properties of materials. It forms a film layer on the surface of the substrate to be coated to enhance the strength, scratch resistance, wear resistance, heat dissipation, water resistance, corrosion resistance or low friction properties of the substrate surface to be coated.

[0003] The Parylene film deposited by traditional Parylene deposition equipment has different thicknesses and lacks uniformity. It has poor adhesion to the substrate and is easily peeled off. It has certain defects and cannot achieve good water resistance and corrosion resistance. The protective effect on the substrate surface is limited.

[0004] It should be noted that this part of the present invention only provides background technology related to the present invention and does not necessarily constitute prior art or public known technology. Summary of the Invention

[0005] The purpose of the present invention is to provide an ALD-Parylene composite film deposition device to overcome the problem that the Parylene film layer deposited by the existing Parylene deposition device has a poor protective effect on the substrate surface.

[0006] To achieve the above objectives, in a first aspect, an embodiment of the present invention provides an ALD-Parylene composite film deposition device, comprising:

[0007] A reaction chamber, the reaction chamber comprising a top cover assembly and a bottom cover assembly that cooperate with each other, the top cover assembly comprising a top plate and an upper heating plate, the upper heating plate being suspended and connected to the lower surface of the top plate, with a first vacuum gap being left between the upper heating plate and the top plate; the bottom cover assembly comprising a bottom plate and a lower heating plate, the lower heating plate being supported and connected to the upper surface of the bottom plate, with a second vacuum gap being left between the lower heating plate and the bottom plate;

[0008] a first air inlet pipeline, the first air inlet pipeline being connected to the reaction chamber, and a first air inlet valve being provided on the first air inlet pipeline for controlling the first type of reaction raw materials to enter the reaction chamber;

[0009] a second air inlet pipeline, the second air inlet pipeline being connected to the reaction chamber, and a second air inlet valve being provided on the second air inlet pipeline for controlling the second type of reaction raw materials to enter the reaction chamber;

[0010] a third air inlet pipeline, the third air inlet pipeline being connected to the reaction chamber, and the third air inlet pipeline being provided with a third air inlet valve for controlling the third type of reaction raw materials to enter the reaction chamber;

[0011] an exhaust pipeline, the exhaust pipeline being connected to the reaction chamber and provided with an exhaust pump;

[0012] A control unit is connected to the first air inlet valve, the second air inlet valve, the third air inlet valve and the exhaust pump respectively. The control unit is used to control the exhaust pump to operate so that a preset vacuum requirement is achieved in the reaction chamber, and to control the first air inlet valve and the second air inlet valve to open alternately to form an atomic deposition layer on the surface of the substrate, and to control the third air inlet valve to open after the atomic deposition is formed to form a Pylaron film layer on the atomic deposition layer.

[0013] Optionally, a first power heating component and a second power heating component are provided on the upper heating plate, and the heating power of the first power heating component is greater than the heating power of the second power heating component;

[0014] The lower heating plate is provided with a third power heating component and a fourth power heating component, wherein the heating power of the third power heating component is greater than the heating power of the fourth power heating component;

[0015] The control unit is connected to the first power heating component, the second power heating component, the third power heating component and the fourth power heating component, and is used to control the first power heating component and the third power heating component to turn on when rapid heating is required, and to control the second power heating component and the fourth power heating component to turn on when temperature maintenance is required.

[0016] Optionally, the first power heating component and the second power heating component are arranged on different layers or on the same layer on the upper heating plate; the third power heating component and the fourth power heating component are arranged on different layers or on the same layer on the lower heating plate.

[0017] Optionally, the first power heating component and the second power heating component are equipped with temperature sensing rods;

[0018] And / or, the third power heating component and the fourth power heating component are equipped with temperature sensing rods.

[0019] Optionally, the center of the upper heating plate is connected to the center of the top plate through a first heat insulating component; the first power heating component and the second power heating component are arranged on the periphery of the first heat insulating component;

[0020] And / or, the center of the lower heating plate is connected to the center of the top plate through a second heat insulating component; the third power heating component and the fourth power heating component are arranged on the periphery of the second heat insulating component.

[0021] Optionally, the center of the first heat insulating component is a hollow structure, for the electrical connection lines of the first power heating component and the second power heating component to pass through;

[0022] And / or, the center of the second heat insulating component is a hollow structure, for the electrical connection lines of the third power heating component and the fourth power heating component to pass through.

[0023] Optionally, the top plate and the bottom plate are sealed together, and the bottom plate is provided with a sealing ring groove along the circumference, and a sealing ring is provided in the sealing ring groove.

[0024] Optionally, the first vacuum gap and / or the second vacuum gap is 1-2 cm.

[0025] Optionally, the first type of reaction raw material is trimethylaluminum, the second type of reaction raw material is water; and the third type of reaction raw material is polyparaxylene.

[0026] Optionally, the ALD-Parylene composite film deposition device further includes: an air inlet and an air outlet; the first air inlet pipeline, the second air inlet pipeline, and the third air inlet pipeline are all connected to the air inlet; the exhaust pipeline is connected to the air outlet;

[0027] The air inlet and the air outlet both pass through the bottom plate and are connected to the edge of the lower heating plate. The lower heating plate is used to place the substrate to be processed, and the substrate is placed in the center of the lower heating plate. The communication position between the air inlet and the lower heating plate and the communication position between the air outlet and the lower heating plate are respectively located at the two ends of the lower heating plate along the diameter direction.

[0028] Optionally, the ALD-Parylene composite film deposition equipment further includes: a first purge air line, a second purge air line and a main purge air line; a first flow meter is provided on the first purge air line, the first purge air line is connected in parallel with the first air inlet line, and the connection position is located between the first air inlet valve and the air inlet, for introducing carrier gas into the reaction chamber during the reaction process, and purging the reaction chamber after the reaction of the first type of reaction raw materials; a second flow meter is provided on the second purge air line, the second purge air line is connected in parallel with the second air inlet line, and the connection position is located between the second air inlet valve and the air inlet, for introducing carrier gas into the reaction chamber during the reaction process, and purging the reaction chamber after the reaction of the second type of reaction raw materials;

[0029] A third flow meter is provided on the main purge gas pipeline; the measuring range of the third flow meter is greater than the measuring range of the first flow meter and the second flow meter, and is used to quickly cool the reaction chamber after all reactions are completed.

[0030] Optionally, the ALD-Parylene composite film deposition equipment further includes: a main purge air pipeline; a third flow meter is arranged on the main purge air pipeline; the range of the third flow meter is greater than any one of the first flow meter, the second flow meter and the third flow meter, and is used to quickly cool the reaction chamber after all reactions are completed.

[0031] In a second aspect, the present invention further provides an ALD-Parylene composite film deposition method, the ALD-Parylene composite film deposition device described in the first aspect, the deposition method comprising:

[0032] S100, placing the substrate at a preset position on the lower heating plate;

[0033] S200, controlling the exhaust pump to operate until the reaction chamber reaches a preset vacuum requirement;

[0034] S300, controlling the first power heating component and the third power heating component to operate until a preset temperature is reached and then shut down, and turning on the second power heating component and the fourth heating component;

[0035] S400, controlling the first air inlet valve and the first flowmeter to start a first reaction process, wherein the first reaction process deposits a first monoatomic deposition layer on the surface of the substrate; and continuing to purge the reaction chamber after the first reaction process is completed;

[0036] S500, controlling the second air inlet valve and the second flowmeter to start a second reaction process, wherein the second reaction process deposits a second monoatomic deposition layer on the surface of the substrate; and continuing to purge the reaction chamber after the second reaction process is completed;

[0037] S600, controlling the first reaction process and the second reaction process to be cyclically performed alternately for several times, thereby forming an atomic deposition layer on the surface of the substrate;

[0038] S700, controlling the third air inlet valve and the third flow meter to start a third reaction process, wherein the third reaction process deposits a Pylaron film layer on the surface of the substrate; after the third reaction process is completed, the reaction chamber is continuously purged;

[0039] S800, looping through steps S600 and S700 until an ALD-Parylene composite film layer having a preset thickness is deposited on the substrate surface; wherein the order of steps S600 and S700 can be reversed;

[0040] S900 , turning off the second power heating component and the fourth power heating component, and controlling the third flow meter to start, so as to quickly cool down the reaction chamber.

[0041] In a third aspect, the present invention further provides an ALD-Parylene composite film layer, which is prepared based on the deposition method described in the second aspect.

[0042] Optionally, the ALD-Parylene composite film layer includes: an atomic deposition layer and a Parylene film layer sequentially formed on the surface of a substrate.

[0043] Optionally, a Parallel film layer and an atomic deposition layer are sequentially formed on the surface of the substrate.

[0044] Optionally, an atomic deposition layer, a Pylaron film layer, and an atomic deposition layer are sequentially formed on the surface of the substrate.

[0045] Optionally, an alternating film layer structure of multiple atomic deposition layers and multiple Palalon film layers is sequentially formed on the surface of the substrate, and the number of layers of the atomic deposition layers and the Palalon film layers is greater than or equal to 2.

[0046] The embodiments of the present invention have at least the following technical effects:

[0047] The ALD-Parylene composite film layer and its deposition equipment and deposition method provided in the embodiments of the present invention combine the ALD reaction with the Parylene reaction in the same reaction chamber, and through different pipeline designs, temperature control and time-sharing control of the raw material valves, a composite film structure of alternating ALD film layers and Parylene film layers can be formed on the surface of the substrate. In this way, the high density of the ALD film layer can enhance the water barrier of the Parylene film layer, while maintaining the softness of the original coating layer, preventing it from breaking when subjected to impact and thermal shock, which is beneficial to improving the stability of the film layer and thus extending the service life of the substrate. In addition, since the temperature of the ALD deposition reaction is not high (200-300°C is a typical reaction temperature, too high will cause the precursor to decompose, and over-temperature will cause the precursor to decompose, and over-temperature will cause the precursor to decompose, and over-temperature will cause the precursor to decompose, and over-temperature will cause the substrate ... Low reaction is insufficient), and the deposited Parylene film will not be decomposed during the ALD reaction process, ensuring the deposition quality of the ALD film and Parylene film. By setting high and low power heating components, the reaction temperature in the chamber can be quickly raised and accurately controlled, thereby shortening the entire reaction time and further reducing the decomposition risk of the Parylene film (the higher the temperature, the easier it is to decompose). At the same time, it also improves the deposition efficiency of the entire coating process. In addition, a vacuum gap is reserved between the heating plate and the outer wall of the chamber. As the vacuum degree in the chamber increases during the reaction process, a barrier is formed to isolate the heating plate from heat conduction to the outside of the chamber, avoiding heat loss and sealing ring damage caused by heat conduction due to direct contact, which is conducive to improving the coating deposition effect. BRIEF DESCRIPTION OF THE DRAWINGS

[0048] In order to more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the specific embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0049] Figure 1 A schematic diagram of the overall structure of an ALD-Parylene composite film deposition device provided in an embodiment of the present invention;

[0050] Figure 2 A schematic diagram of the internal structure of a reaction chamber provided in an embodiment of the present invention;

[0051] Figure 3 A schematic top view of the bottom cover assembly provided by an embodiment of the present invention;

[0052] Figure 4 The embodiment of the present invention provides Figure 3 Schematic diagram of the cross-sectional structure along the middle line AA;

[0053] Figure 5 A schematic top view of the top cover assembly provided in an embodiment of the present invention;

[0054] Figure 6 The embodiment of the present invention provides Figure 5 Schematic diagram of the cross-sectional structure along the middle edge BB;

[0055] Figure 7 A flow chart of a method for depositing an ALD-Parylene composite film provided in an embodiment of the present invention;

[0056] Figure 8 A schematic diagram of the principle of the ALD reaction provided in an embodiment of the present invention;

[0057] Figure 9 A schematic diagram of the film structure of an ALD-Parylene composite film provided in an embodiment of the present invention;

[0058] Figure 10 A schematic diagram of the film structure of another ALD-Parylene composite film provided in an embodiment of the invention;

[0059] Figure 11 A schematic diagram of the film structure of another ALD-Parylene composite film provided in an embodiment of the invention;

[0060] Figure 12 A schematic diagram of the film structure of another ALD-Parylene composite film provided in an embodiment of the invention.

[0061] Reference numerals:

[0062] 1-substrate; 2-atomic deposition layer; 21-first single atomic deposition layer; 22-second single atomic deposition layer; 3-Pylaron film layer;

[0063] 100 - reaction chamber; 110 - top cover assembly; 111 - top plate; 112 - upper heating plate; 1121 - first power heating element; 1122 - second power heating element; 113 - first vacuum gap; 114 - first thermal insulation element; 120 - bottom cover assembly; 121 - bottom plate; 122 - lower heating plate; 1221 - third power heating element; 1222 - fourth power heating element; 123 - second vacuum gap; 124 - second thermal insulation element; 130 - sealing ring; 130a - sealing ring groove; 140 - air inlet; 150 - air outlet; 160 - thermal insulation layer;

[0064] 200-exhaust pipe; 210-exhaust pump;

[0065] 300-first air intake pipe; 310-first air intake valve;

[0066] 400 - second air intake line; 410 - second air intake valve;

[0067] 500-third air intake line; 510-third air intake valve;

[0068] 600-first scavenging air pipeline; 610-first flow meter;

[0069] 700 - second scavenging air pipeline; 710 - second flow meter;

[0070] 800-Main scavenging air pipeline; 810-Third flow meter. DETAILED DESCRIPTION

[0071] The following will clearly and completely describe the technical solutions of the present invention in conjunction with the embodiments. Obviously, the embodiments described are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0072] Those skilled in the art will understand that, unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by those skilled in the art in the art to which this invention belongs. It should also be understood that terms such as those defined in common dictionaries should be understood to have meanings consistent with their meanings in the context of the prior art and, unless specifically defined as such, will not be interpreted in an idealized or overly formal sense.

[0073] It will be understood by those skilled in the art that, unless otherwise stated, the singular forms "a," "an," "said," and "the" used herein may also include plural forms. It should be further understood that the term "comprising" used in the specification of the present invention refers to the presence of the stated features, integers, steps, operations, elements, and / or components, but does not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof. The term "and / or" used herein includes all or any unit and all combinations of one or more associated listed items.

[0074] In the description of the present invention, it should be understood that the terms "center", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention.

[0075] The terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the quantity of the technical features being referred to. Thus, a feature specified as "first" or "second" may explicitly or implicitly include one or more of such features. In the description of the present invention, unless otherwise specified, "plurality" means two or more.

[0076] Combine Figure 1 As shown, an embodiment of the present invention provides an ALD-Parylene composite film deposition apparatus, comprising: a reaction chamber 100, a first air inlet line 300, a second air inlet line 400, a third air inlet line 500, an exhaust line 200, and a control unit. The ALD-Parylene composite film refers to a composite film structure formed by combining an ALD (Atomic Layer Deposition) process with a Parylene (Parylene or Parylene) vacuum deposition process. Specifically, the ALD in ALD-Parylene refers to the atomic layer deposition process, and the Parylene in ALD-Parylene refers to the Parylene or Parylene vacuum deposition process (Parylene is used as an example in the present embodiment). The ALD-Parylene composite film is equivalent to the composite film structure obtained by the above two processes.

[0077] Specifically, if Figures 2 to 6 As shown, the reaction chamber 100 includes a top cover assembly 110 and a bottom cover assembly 120 that cooperate with each other. The top cover assembly 110 includes a top plate 111 and an upper heating disk 112. The upper heating disk 112 is suspended and connected to the lower surface of the top plate 111. A first vacuum gap 113 is left between the upper heating disk 112 and the top plate 111; the bottom cover assembly 120 includes a bottom plate 121 and a lower heating disk 122. The lower heating disk 122 is supported and connected to the upper surface of the bottom plate 121. A second vacuum gap 123 is left between the lower heating disk 122 and the bottom plate 121.

[0078] Optionally, a sealing ring groove 130a is provided along the circumference of the bottom plate 121, and a sealing ring 130 is provided in the sealing ring groove 130a. The top plate 111 is pressed onto the sealing ring 130 and tightly fits with the bottom plate 121. The sealing ring 130 is provided to enhance the sealing effect between the top plate 111 and the bottom plate 121. In this embodiment of the present invention, a vacuum gap is provided to minimize heat loss caused by heat conduction from the heating plate to the outside of the cavity. This can prevent uneven temperature and inaccurate reaction temperature control that may affect the coating efficiency and quality.

[0079] Optionally, in order to increase the sealing effect, the sealing ring groove 130a and the sealing ring 130 can be set to a multi-ring annular distribution. In this way, even if part of the sealing ring 130 is damaged, the impact on the sealing of the entire reaction chamber 100 is small, which is conducive to preventing external air from entering under the premise of precise temperature control, and is conducive to improving the deposition quality of ALD and Paralon film layers.

[0080] A first air inlet line 300 is connected to the reaction chamber 100 and is provided with a first air inlet valve 310 for controlling the entry of a first type of reaction raw material into the reaction chamber 100. In this embodiment, the first type of reaction raw material is trimethylaluminum (TMA). A second air inlet line 400 is connected to the reaction chamber 100 and is provided with a second air inlet valve 410 for controlling the entry of a second type of reaction raw material into the reaction chamber 100. In this embodiment, the second type of reaction raw material is water (H2O).

[0081] The third air inlet line 500 is connected to the reaction chamber 100. A third air inlet valve 510 is provided on the third air inlet line 500 for controlling the third type of reaction raw material to enter the reaction chamber 100. The third type of reaction raw material in this embodiment is polyparaxylene, which is formed into paraxylene after high-temperature cracking and is used to deposit and form a paralon film layer.

[0082] The exhaust pipe 200 is connected to the reaction chamber 100. An exhaust pump 210 is provided on the exhaust pipe 200 to extract the gas in the chamber before the ALD reaction, so that the vacuum gap is also in a vacuum state, thereby effectively isolating the excessive heat transfer to the outer cavity, reducing heat loss, and improving the deposition rate and deposition quality of the film layer.

[0083] The control unit is respectively connected to the first air intake valve 310, the second air intake valve 410, the third air intake valve 510 and the exhaust pump 210. The control unit is used to control the operation of the exhaust pump 210 to evacuate the reaction chamber 100 and finally reach the preset vacuum requirement (the specific vacuum degree needs to be set according to the requirements of the ALD reaction and is not specifically limited here), so that the vacuum gap is also in a relative vacuum state, effectively isolating the excessive heat transfer to the outer cavity and the rubber ring, reducing heat loss and melting damage to the seal.

[0084] Furthermore, due to the characteristics of the ALD reaction, each ALD reaction requires two reaction processes to form a single atomic deposition layer 2. The control unit controls the first air intake valve 310 and the second air intake valve 410 to alternately open to form an atomic deposition layer 2 (in the embodiment of the present invention, the atomic deposition layer 2 is exemplified as a multi-layer Al2O3 film layer) on the surface of the substrate 1. After the atomic deposition is formed, the control unit controls the third air intake valve 510 to open to form a Parylene film layer 3 on the atomic deposition layer 2. In this way, the atomic deposition layer 2 and the Parylene film layer 3 are alternately formed on the surface of the substrate 1. In this way, the atomic deposition layer 2 deposited by ALD is sealed by the Parylene film layer, reducing the impact of film defects on the protective performance. At the same time, the softness of the original coating is maintained, preventing it from breaking when subjected to impact and thermal shock, which is conducive to improving the stability of the film layer.

[0085] It should be noted that the ALD reaction method is used to deposit the Al2O3 film in the present embodiment primarily because the deposition temperature of the ALD reaction is relatively low (typically 200-300°C). This allows the cyclic deposition of the Al2O3 and Parylene layers without affecting the stability of the already deposited Parylene layer. Furthermore, the specific deposition processes for the atomically deposited layer 2 and the Parylene layer 3 in the present embodiment are described in detail in the deposition method examples and are not further described here.

[0086] In some embodiments, the upper heating plate 112 is provided with a first power heating component 1121 and a second power heating component 1122, wherein the heating power of the first power heating component 1121 is greater than the heating power of the second power heating component 1122. The lower heating plate 122 is provided with a third power heating component 1221 and a fourth power heating component 1222, wherein the heating power of the third power heating component 1221 is greater than the heating power of the fourth power heating component 1222.

[0087] Specifically, the control unit is connected to the first power heating component 1121, the second power heating component 1122, the third power heating component 1221 and the fourth power heating component 1222, and is used to control the first power heating component 1121 and the third power heating component 1221 to be turned on when rapid heating is required. Since the power of the first power heating component 1121 and the third power heating component 1221 is large, it is conducive to achieving a rapid temperature rise to shorten the deposition time of the entire film layer, which is conducive to reducing the risk of decomposition of the Parylene film layer during the ALD reaction; when the temperature needs to be maintained, the second power heating component 1122 and the fourth power heating component 1222 are controlled to be turned on. Since the power of the second power heating component 1122 and the fourth power heating component 1222 is reduced, this is conducive to precise temperature control.

[0088] The ALD-Parylene composite film deposition equipment provided by the embodiment of the present invention combines the ALD reaction and the Parylene reaction in the same reaction chamber, and through different pipeline designs, temperature control and time-sharing control of the raw material valve, a composite film structure of alternating ALD film layers and Parylene film layers can be formed on the surface of the substrate. In this way, the high density of the ALD film layer can enhance the water barrier of the Parylene film layer, while maintaining the softness of the original coating layer, preventing it from breaking when subjected to impact and thermal shock, which is beneficial to improving the stability of the film layer and thus extending the service life of the substrate; and because the temperature of the ALD deposition reaction is not high (200-300°C is a typical reaction temperature, too high will cause the precursor to decompose, and too low a reaction temperature will cause the precursor to decompose, and too low a reaction temperature will cause the precursor to decompose, and too high a reaction temperature will cause the precursor to decompose, and too low a reaction temperature will cause the precursor to decompose, and too high a reaction temperature will cause the precursor to decompose, and too high a reaction temperature will cause the precursor to decompose, and too high a reaction temperature will cause the precursor to decompose, and too high a reaction temperature will cause the precursor to decompose, and too high a reaction temperature will cause the precursor to decompose, and too high a reaction temperature will cause the substrate ... The ALD reaction process does not cause the decomposition of the deposited Parylene film, ensuring the deposition quality of the ALD and Parylene films. In addition, by setting high and low power heating components, the reaction temperature in the chamber can be quickly raised and precisely controlled, thereby shortening the entire reaction time and further reducing the decomposition risk of the Parylene film (the higher the temperature, the easier it is to decompose). At the same time, the deposition efficiency of the entire coating process is also improved. In addition, a vacuum gap is reserved between the heating plate and the outer wall of the chamber. As the vacuum degree in the chamber increases during the reaction process, a barrier is formed to isolate the heating plate from heat conduction to the outside of the chamber, avoiding heat loss and damage to the sealing ring caused by heat conduction due to direct contact, which is conducive to improving the coating deposition effect.

[0089] Optionally, the first power heating component 1121 and the second power heating component 1122 are arranged on different layers or on the same layer on the upper heating disk 112. The first power heating component 1121 and the second power heating component 1122 can both be vortex-shaped heating rods, and the vortex sizes of the first power heating component 1121 and the second power heating component 1122 are staggered, so that they are conveniently arranged on the same layer of the heating disk; of course, the first power heating component 1121 and the second power heating component 1122 are divided into two layers of heating disks, and there can be a certain gap between the two. When the first power heating component 1121 needs to be turned on, the second power heating component 1122 can be turned off; when the second power heating component 1122 needs to be turned on, the first power heating component 1121 can be turned off.

[0090] Optionally, the third power heating component 1221 and the fourth power heating component 1222 are arranged in different layers or in the same layer on the lower heating disk 122. The third power heating component 1221 and the fourth power heating component 1222 can both be vortex-shaped heating rods, and the vortex sizes of the third power heating component 1221 and the fourth power heating component 1222 are staggered, so as to be conveniently arranged on the same layer of the heating disk; of course, the third power heating component 1221 and the fourth power heating component 1222 are divided into two layers of heating disks, and there can be a certain gap between the two. When the third power heating component 1221 needs to be turned on, the fourth power heating component 1222 can be turned off; when the fourth power heating component 1222 needs to be turned on, the third power heating component 1221 can be turned off.

[0091] Optionally, the first power heating component 1121 and the second power heating component 1122 are equipped with temperature sensors, which can detect the temperature of the corresponding power heating components. In this way, the reaction conditions (reaction gas flow, reaction temperature, purge flow, etc.) can be adjusted according to the detected temperature, and there is no need to set up additional temperature sensors, saving installation space and cost.

[0092] Optionally, the third power heating component 1221 and the fourth power heating component 1222 are equipped with temperature sensors, which can detect the temperature of the corresponding power heating components. In this way, the reaction conditions (reaction gas flow, reaction temperature, purge flow, etc.) can be adjusted according to the detected temperature, and there is no need to set up additional temperature sensors, saving installation space and cost.

[0093] Optionally, the center of the upper heating disk 112 is connected to the center of the top plate 111 through a first heat-insulating component; the first power heating component 1121 and the second power heating component 1122 are arranged on the periphery of the first heat-insulating component. It should be noted that the first power heating component 1121 and the second power heating component 1122 are arranged on the periphery of the first heat-insulating component 114, which means that the orthographic projections of the first power heating component 1121 and the second power heating component 1122 on the top plate 111 enclose the orthographic projection of the first heat-insulating heating component on the top plate 111. This does not affect the installation of the first heat-insulating component 114, and can also further reduce the heat conduction of the power heating component to the first heat-insulating component.

[0094] Optionally, the center of the lower heating plate 122 is connected to the center of the top plate 111 through a second insulating component; the third power heating component 1221 and the fourth power heating component 1222 are arranged on the periphery of the second insulating component. It should be noted that the third power heating component 1221 and the fourth power heating component 1222 are arranged on the periphery of the second insulating component 124, which means that the orthographic projections of the third power heating component 1221 and the fourth power heating component 1222 on the top plate 111 enclose the orthographic projection of the second insulating component 124 on the top plate 111. This does not affect the installation of the second insulating component 124, and can also further reduce the heat conduction of the power heating component to the second insulating component.

[0095] In this embodiment, the heating plate is fixedly connected by providing an insulating component, and a vacuum gap is left between the other areas of the upper heating plate or the lower heating plate and the corresponding top or bottom of the reaction chamber 100, that is, the other areas of the heating plate are not directly connected to the chamber. This can reduce the heat loss caused by the heat on the heating plate being conducted to the outside of the chamber, and also prevent the temperature of the chamber shell from being too high, causing the sealing component to fail and affecting the sealing effect of the entire reaction chamber 100.

[0096] Optionally, the center of the first thermal insulation component 114 is a hollow structure for the electrical connection lines of the first power heating component 1121 and the second power heating component 1122 to pass through, so that there is no need to open additional holes in the reaction chamber 100 for threading the wires. At the same time, the hollow structure in the center of the first thermal insulation component 114 can also provide certain protection and insulation for the lines above.

[0097] Optionally, the center of the second thermal insulation component 124 is a hollow structure for the electrical connection lines of the third power heating component 1221 and the fourth power heating component 1222 to pass through, so that there is no need to open additional holes in the reaction chamber 100 for threading. At the same time, the hollow structure in the center of the second thermal insulation component 124 can also provide certain protection and insulation for the lines below.

[0098] Optionally, the first vacuum gap 113 and / or the second vacuum gap 123 is generally 1-2 cm, which can ensure the heat insulation effect while also minimizing the size of the entire device and saving costs.

[0099] Alternatively, in the embodiment of the present invention, the first type of reaction raw material is trimethylaluminum, and the second type of reaction raw material is water. ALD reaction is performed between trimethylaluminum and water to form an Al2O3 film. The third type of reaction raw material is polyparaxylene, which is pyrolyzed at high temperature to form paraxylene, which is used to deposit a Pylaron film layer, thereby protecting the surface of the substrate 1.

[0100] Optionally, the ALD-Parylene composite film deposition apparatus further includes an air inlet 140 and an air outlet 150. The air inlet 140 extends from the bottom plate 121 to the lower heating plate 122, and the air outlet 150 extends from the lower heating plate 122 to the bottom plate 121, thereby facilitating connection with external air inlet pipes. The first air inlet pipe 300, the second air inlet pipe 400, and the third air inlet pipe 500 can be connected to the air inlet 140 via pipe connectors, respectively, and the exhaust pipe 200 is connected to the air outlet 150 via a pipe connector, thereby achieving a circulating connection of the air circuit.

[0101] Specifically, the air inlet 140 and the air outlet 150 both pass through the bottom plate 121 and are connected to the edge of the lower heating plate 122. The lower heating plate 122 is used to place the substrate 1 to be processed. The substrate 1 is placed in the center of the lower heating plate 122 to ensure uniformity of the coating.

[0102] Furthermore, the connection position between the air inlet 140 and the lower heating plate 122 and the connection position between the air outlet 150 and the lower heating plate 122 are respectively located at the two ends of the lower heating plate 122 along the diameter direction, so as to ensure that the air outlet 150 on the lower heating plate 122 is as far away from the position of the air inlet 140 as possible.

[0103] Optionally, the outer walls of the air inlet 140 and the air outlet 150 located in the second vacuum gap 123 area and the inner wall of the lower heating plate 122 area are coated with an insulation layer 160. The insulation layer 160 can reduce the heat of the lower heating plate 122 from being conducted to the outside of the cavity through the air inlet 140 and the air outlet 150 to affect the cavity temperature, reduce the risk of damage to the sealing ring under high temperature conditions, and facilitate more precise control of the cavity temperature and prevent external air from entering the cavity and reducing the film deposition quality.

[0104] Optionally, continue to Figure 1 The ALD-Parylene composite film deposition equipment provided in an embodiment of the present invention further includes: a first purge air pipeline 600, a second purge air pipeline 700, and a main purge air pipeline 800. These three purge air pipelines are respectively connected in parallel with the corresponding air intake pipelines, so as to achieve the purge of the reaction chamber 100 after the intake reaction of the corresponding air intake pipeline, which is conducive to the discharge of waste materials and also avoids affecting the deposition effect of subsequent film layers.

[0105] Specifically, a first flowmeter 610 is provided on the first purge gas line 600. The first purge gas line 600 is connected in parallel to the first air inlet line 300, and the connection position is located between the first air inlet valve 310 and the air inlet 140. The first purge gas line 600 is used to introduce carrier gas into the reaction chamber 100 during the reaction process and to purge the reaction chamber 100 after the reaction of the first type of reaction raw materials. The first flowmeter 610 is used to display or adjust the purge gas flow rate of the corresponding first purge gas line 600. The first purge gas line 600 generally introduces nitrogen gas, which can be used as a carrier gas for the reaction raw materials and also as a purge gas after the reaction is completed.

[0106] Similarly, a second flowmeter 710 is provided on the second purge gas line 700. The second purge gas line 700 is connected in parallel to the second air inlet line 400, and the connection position is located between the second air inlet valve 410 and the air inlet 140. The second purge gas line 700 is used to introduce carrier gas into the reaction chamber 100 during the reaction process and to purge the reaction chamber 100 after the reaction of the second type of reaction raw materials. The second flowmeter 710 is used to display or adjust the purge gas flow rate of the corresponding second purge gas line 700. The second purge gas line 700 generally also introduces nitrogen gas, which can be used as a carrier gas for the reaction raw materials and also as a purge gas after the reaction is completed.

[0107] A third flow meter 810 is provided on the main purge gas line 800; the measuring range of the third flow meter 810 is greater than the measuring range of the first flow meter 610 and the second flow meter 710, that is, by purging with a large flow of nitrogen, the reaction chamber 100 is quickly cooled after all reactions are completed, thereby shortening the entire process time.

[0108] In this embodiment, a scavenging gas pipeline is provided on the corresponding scavenging gas pipeline. The scavenging gas pipeline can provide carrier gas to the reaction raw materials of the air inlet pipeline, which is beneficial to diluting the reaction raw materials and accelerating the rapid diffusion of the reaction raw materials to the entire cavity. At the same time, after the reaction of the reaction raw materials of each air inlet pipeline, the excess reactants and by-products in the reaction chamber 100 are scavenged and discharged, thereby avoiding affecting the deposition effect of the subsequent film layer, and is beneficial to improving the deposition quality of the ALD-Parylene composite film layer.

[0109] Based on the same inventive concept, Figure 7 As shown, an embodiment of the present invention provides an ALD-Parylene composite film deposition method. Based on the ALD-Parylene composite film deposition equipment of the above embodiment, the deposition method includes the following steps:

[0110] S100 , placing the substrate 1 at a preset position on the lower heating plate 122 .

[0111] Specifically, the substrate 1 to be coated is first placed at the center of the lower heating plate 122, which is beneficial to improving the uniformity of coating.

[0112] S200 , controlling the exhaust pump 210 to operate until the reaction chamber 100 reaches a preset vacuum requirement.

[0113] Specifically, the control unit controls the exhaust pump 210 to start (all air inlet lines are closed by default), thereby extracting the gas in the reaction chamber 100 and meeting the vacuum requirement of the ALD reaction. Since there is a vacuum gap between the upper heating disk 112 and the top plate 111, and a vacuum gap between the lower heating disk 122 and the bottom plate 121, when the vacuum requirement is met in the reaction chamber 100, the vacuum gap is also in a relatively vacuum state, thereby effectively blocking the heat on the heating disk.

[0114] S300, controlling the first power heating component 1121 and the third power heating component 1221 to work until the preset temperature is reached and then turning off, and turning on the second power heating component 1122 and the fourth heating component.

[0115] Specifically, at the beginning of the reaction, when rapid temperature increase is required, the control unit controls the high-power first power heating component 1121 and the high-power third power heating component 1221. When the preset reaction temperature is reached, the temperature is precisely controlled by turning on the low-power second power heating component 1122 and the low-power fourth power heating component 1222.

[0116] S400 , controlling the first air inlet valve 310 and the first flowmeter 610 to start a first reaction process, wherein the first reaction process deposits a first monoatomic deposition layer 21 on the surface of the substrate 1 ; after the first reaction process is completed, the reaction chamber 100 is continuously purged.

[0117] Specifically, trimethylaluminum is first introduced into the reaction chamber 100 through a carrier gas (for example, nitrogen), so that it is chemically adsorbed on the substrate (the surface of the substrate 1, the substrate 1 is surface treated before the reaction, so that the surface of the substrate (such as a silicon wafer) is rich in hydroxyl (-OH) groups, providing active sites for subsequent reactions). The Al atoms in the trimethylaluminum oxidize half of the film layer, so that part of the Al methyl group (-CH3) is replaced by O, and the replaced methyl group is converted into CH4 and discharged. The entire reaction process is the first reaction process (i.e., the adsorption process). Figure 8 and continue to introduce nitrogen to purge the reaction residues and by-products.

[0118] The specific process and reaction equation of reaction A are as follows:

[0119] When trimethylaluminum (Al(CH3)3, TMA for short) gas is introduced, TMA molecules react with surface hydroxyl groups:

[0120] ;

[0121] The surface hydroxyl groups (-OH) are consumed, forming Al-O bonds and releasing methane (CH4). The reaction stops when all surface -OH groups are covered by TMA. An inert gas (such as nitrogen) is then introduced to purge unreacted TMA and the by-product CH4, preventing gas-phase side reactions.

[0122] S500 , controlling the second air inlet valve 410 and the second flowmeter 710 to start a second reaction process, wherein the second reaction process deposits a second monoatomic deposition layer 22 on the surface of the substrate 1 ; after the second reaction process is completed, the reaction chamber 100 is continuously purged.

[0123] Specifically, water is introduced (water needs to be heated to form water vapor during the reaction so as to fully contact and react with trimethylaluminum), so that it reacts chemically with trimethylaluminum to form the required Al2O3 film layer (the second reaction process, i.e., the attachment process). Figure 8 B reaction in the ALD process), and nitrogen is continuously introduced to purge the reaction residues and by-products, thereby forming a complete ALD cycle. Each ALD cycle includes a first reaction process and a second reaction process. The final atomic deposition layer 2 may include multiple Al2O3 film layers.

[0124] The specific process and reaction equation of reaction B are as follows:

[0125] Water vapor (H2O) is introduced, and H2O reacts with Al-CH3:

[0126] ‌;

[0127] Al-CH3 bonds are converted to Al-OH bonds, releasing CH4 and restoring surface -OH groups for the next reaction, Reaction A. After Reaction B, a purge is performed to remove residual H2O and byproducts, completing an ALD cycle. Each ALD cycle deposits approximately 0.1nm of thickness, and the number of cycles determines the final Al2O3 film thickness (the ||-Al-OH residue after Reaction B can undergo dehydration and condensation to form Al2O3).

[0128] The comprehensive reaction formula after combining the above reaction A and reaction B is equivalent to:

[0129] ;

[0130] It should be noted that the “||” in the above reaction formula represents the surface structure of the substrate 1 after surface treatment.

[0131] S600 , controlling the first reaction process and the second reaction process to be cyclically performed alternately for several times, thereby forming an atomic deposition layer 2 on the surface of the substrate 1 .

[0132] Specifically, the control unit realizes the alternation of the first reaction process and the second reaction process by controlling the opening and closing of the first intake valve 310 on the first intake channel and the opening and closing of the second intake valve 410 on the second intake channel, thereby forming an atomic deposition layer 2 composed of multiple layers of Al2O3, and the total thickness of the atomic deposition layer 2 is nanometer level.

[0133] S700 , controlling the third air inlet valve 510 and the third flowmeter 810 to start a third reaction process. The third reaction process deposits the Pylaron film layer 3 on the surface of the substrate 1 . After the third reaction process is completed, the reaction chamber 100 is continuously purged.

[0134] Specifically, after completing the atomic deposition layer 2 of a certain thickness in S600, the deposition of the Pylaron film layer is carried out by passing the high-temperature cracked paraxylene into the reaction chamber 100. The thickness of the Pylaron film layer is thicker than that of the atomic deposition layer 2, and the thickness of the single-layer Pylaron film layer is in the micron level.

[0135] S800 , looping through steps S600 and S700 until an ALD-Parylene composite film layer having a preset thickness is deposited on the surface of the substrate 1 .

[0136] Specifically, by cyclically depositing the atomic deposition layer 2 and the Pylaron film layer 3 (the order of deposition of the atomic deposition layer 2 and the Pylaron film layer 3 on the surface of the substrate 1 can be interchanged, that is, the order of steps S600 and S700 can be interchanged, and is not specifically limited), a composite film layer is formed on the surface of the substrate 1. This helps to enhance the water barrier properties of the film layer, because the Al2O3 film layer deposited by ALD has a high density and a very low defect rate, which helps to seal the defects of the original Pylaron film layer; at the same time, the softness of the original coating is maintained, and it will not break when subjected to impact and thermal shock, thereby improving the stability of the film layer and extending the service life of the substrate 1.

[0137] S900 , turning off the second power heating component 1122 and the fourth power heating component 1222 , and controlling the third flow meter 810 to start, so as to quickly cool down the reaction chamber 100 .

[0138] Based on the same inventive concept, Figure 9As shown, an embodiment of the present invention further provides an ALD-Parylene composite film layer, which is prepared based on the deposition method mentioned in the above embodiment. The composite film layer obtained based on the deposition method of the above embodiment includes first depositing an atomic deposition layer (Al2O3 layer) 2 on a substrate 1 by ALD to tightly bond to the substrate 1 and to connect the Parylene film layer (Parylene film layer) 3, and then overlapping the Al2O3 film layer and the Parylene film layer. The Parylene film layer and the Al2O3 film layer are alternately stacked on the surface of the substrate 1, thereby enhancing the water barrier properties of the coating. Because the Al2O3 film layer deposited by the deposition equipment and method of the present invention has a high density, a low defect rate, and strong adhesion, it is equivalent to blocking a very high proportion of defects in the original Parylene coating; at the same time, due to the ALD reaction and the Parylene reaction during the deposition process, It should be carried out in the same reaction chamber. Since the temperature of the ALD deposition reaction is not high (200-300℃ is the typical reaction temperature, too high will cause the decomposition of the precursor, and too low will cause incomplete reaction), the ALD reaction process will not cause the decomposition of the deposited Parylene film layer, ensuring the deposition quality of the ALD film layer and the Parylene film layer. By setting high and low power heating components, the reaction temperature in the chamber can be quickly raised and precisely controlled, thereby shortening the entire reaction time and further reducing the decomposition risk of the Parylene film layer (the higher the temperature, the easier it is to decompose). In other words, the softness of the original Parylene coating is maintained and it will not break when hit or subjected to thermal shock. The number of alternating layers of atomic deposition layer 2 and Parylene film layer 3 is greater than or equal to 2, and the upper limit depends on the film thickness requirements on the substrate surface. Figure 9 The atomic deposition layer 2 and the Pylaron film layer 3 shown in the figure both have three layers.

[0139] Alternatively, as Figure 10 As shown, in some embodiments, the ALD-Parylene composite film layer can be obtained by first depositing a Parylene film layer (Parylene film layer) 3 on the substrate 1, and then depositing an atomic deposition layer (Al2O3 layer) 2 on the Parylene film layer 3. In this way, the Al2O3 layer is used to protect the Parylene film layer, which is beneficial to improving the protective performance of the surface of the substrate 1.

[0140] Alternatively, as Figure 11 As shown, in some embodiments, the ALD-Parylene composite film layer can be formed by first depositing an atomic deposition layer (Al2O3 layer) 2 on the substrate 1, and then depositing a Parylene film layer (Parylene film layer) 3 on the Al2O3 layer. This is beneficial to improving the adhesion between the Parylene film layer and the substrate, thereby improving the stability of the protective film layer, and also beneficial to improving the protective performance of the surface of the substrate 1.

[0141] Alternatively, as Figure 12 As shown, in some embodiments, the ALD-Parylene composite film layer can be formed by first depositing an atomic deposition layer (Al2O3 layer) 2 on a substrate 1, then depositing a Paralon film layer (Parylene film layer) 3 on the Al2O3 layer, and finally depositing another Al2O3 layer on the Parylene film layer. This helps to improve the adhesion between the Parylene film layer and the substrate, and can also use the outermost Al2O3 layer to protect the Parylene film layer.

[0142] It should be noted that Figures 9 to 12 The ALD-Parylene composite film shown in the figure has improved the protection effect on the substrate compared to the original Parylene film. Figure 9 The multi-layer alternating film structure shown has a better protective effect on the substrate surface.

[0143] In the description of the present invention, it should be noted that, unless otherwise expressly specified or limited, the terms "installed," "connected," and "connected" should be understood in a broad sense. For example, they can refer to fixed connections, detachable connections, or integral connections; they can refer to direct connections, indirect connections through an intermediate medium, or internal connections between two components. A person of ordinary skill in the art can understand the specific meanings of the above terms in the present invention based on the specific circumstances. In the description of this specification, specific features, structures, materials, or characteristics may be combined in an appropriate manner in any one or more embodiments or examples.

[0144] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the above embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. An ALD-Parylene composite film deposition device, characterized in that: include: A reaction chamber, the reaction chamber comprising a top cover assembly and a bottom cover assembly that cooperate with each other, the top cover assembly comprising a top plate and an upper heating plate, the upper heating plate being suspended and connected to the lower surface of the top plate by a first thermal insulation component, with a first vacuum gap being left between the upper heating plate and the top plate; the bottom cover assembly comprising a bottom plate and a lower heating plate, the lower heating plate being supported and connected to the upper surface of the bottom plate by a second thermal insulation component, with a second vacuum gap being left between the lower heating plate and the bottom plate; The first vacuum gap and the second vacuum gap are 1-2 cm; the top plate and the bottom plate are sealed together, the bottom plate is provided with a sealing ring groove along the circumference, and a sealing ring is provided in the sealing ring groove; a first air inlet pipe connected to the reaction chamber, wherein a first air inlet valve is provided on the first air inlet pipe for controlling the first type of reaction raw material to enter the reaction chamber; the first type of reaction raw material is trimethylaluminum; a second air inlet pipeline connected to the reaction chamber, wherein a second air inlet valve is provided on the second air inlet pipeline for controlling the second type of reaction raw material to enter the reaction chamber; the second type of reaction raw material is water; a third air inlet pipeline connected to the reaction chamber, and provided with a third air inlet valve for controlling the third type of reaction raw material to enter the reaction chamber; the third type of reaction raw material is polyparaxylene; an exhaust pipeline, the exhaust pipeline being connected to the reaction chamber and provided with an exhaust pump; A main purge gas pipeline, connected to the reaction chamber, for rapidly cooling the reaction chamber after all reactions are completed; a control unit, the control unit being connected to the first air inlet valve, the second air inlet valve, the third air inlet valve, and the exhaust pump, respectively, and configured to control the exhaust pump to operate so that a preset vacuum requirement is achieved in the reaction chamber, and to control the first air inlet valve and the second air inlet valve to be alternately opened to form an atomic deposition layer on the surface of the substrate, and to control the third air inlet valve to be opened after the atomic deposition is formed to form a Pylaron film layer on the atomic deposition layer; The upper heating plate is provided with a first power heating component and a second power heating component, wherein the heating power of the first power heating component is greater than the heating power of the second power heating component; The lower heating plate is provided with a third power heating component and a fourth power heating component, wherein the heating power of the third power heating component is greater than the heating power of the fourth power heating component; The control unit is connected to the first power heating component, the second power heating component, the third power heating component and the fourth power heating component, and is used to control the first power heating component and the third power heating component to turn on when rapid heating is required, and to control the second power heating component and the fourth power heating component to turn on when temperature maintenance is required.

2. The ALD-Parylene composite film deposition equipment according to claim 1, characterized in that: The first power heating component and the second power heating component are arranged on different layers or on the same layer on the upper heating plate; The third power heating component and the fourth power heating component are arranged on different layers or on the same layer on the lower heating plate.

3. The ALD-Parylene composite film deposition device according to claim 1, characterized in that: The first power heating component and the second power heating component are equipped with temperature sensing rods; And / or, the third power heating component and the fourth power heating component are equipped with temperature sensing rods.

4. The ALD-Parylene composite film deposition device according to claim 1, characterized in that: The center of the upper heating plate is connected to the center of the top plate through the first heat insulating component; the first power heating component and the second power heating component are arranged on the periphery of the first heat insulating component; And / or, the center of the lower heating plate is connected to the center of the top plate through the second heat insulating component; the third power heating component and the fourth power heating component are arranged on the periphery of the second heat insulating component.

5. The ALD-Parylene composite film deposition device according to claim 4, characterized in that: The center of the first heat insulating component is a hollow structure, for the electrical connection lines of the first power heating component and the second power heating component to pass through; And / or, the center of the second heat insulating component is a hollow structure, for the electrical connection lines of the third power heating component and the fourth power heating component to pass through.

6. The ALD-Parylene composite film deposition device according to any one of claims 1 to 5, characterized in that: Also includes: An air inlet and an air outlet; the first air inlet pipeline, the second air inlet pipeline and the third air inlet pipeline are all connected to the air inlet; the exhaust pipeline is connected to the air outlet; The air inlet and the air outlet both pass through the bottom plate and are connected to the edge of the lower heating plate. The lower heating plate is used to place the substrate to be processed, and the substrate is placed in the center of the lower heating plate. The communication position between the air inlet and the lower heating plate and the communication position between the air outlet and the lower heating plate are respectively located at the two ends of the lower heating plate along the diameter direction.

7. The ALD-Parylene composite film deposition device according to claim 6, characterized in that: Also includes: a first scavenging air pipeline and a second scavenging air pipeline; A first flow meter is provided on the first purge gas pipeline, and the first purge gas pipeline is connected in parallel with the first air inlet pipeline, and the parallel connection position is located between the first air inlet valve and the air inlet, and is used to introduce carrier gas into the reaction chamber during the reaction process and to purge the reaction chamber after the reaction of the first type of reaction raw materials; A second flow meter is provided on the second purge gas pipeline. The second purge gas pipeline is connected in parallel with the second air inlet pipeline, and the connection position is located between the second air inlet valve and the air inlet, and is used to introduce carrier gas into the reaction chamber during the reaction process and to purge the reaction chamber after the reaction of the second type of reaction raw materials; A third flow meter is provided on the main scavenging air pipeline; the measuring range of the third flow meter is greater than the measuring range of the first flow meter and the second flow meter.

8. A method for depositing an ALD-Parylene composite film, based on the ALD-Parylene composite film deposition apparatus according to claim 7, characterized in that: The deposition method comprises: S100, placing the substrate at a preset position on the lower heating plate; S200, controlling the exhaust pump to operate until the reaction chamber reaches a preset vacuum requirement; S300, controlling the first power heating component and the third power heating component to operate until a preset temperature is reached and then shut down, and turning on the second power heating component and the fourth heating component; S400, controlling the first air inlet valve and the first flowmeter to start a first reaction process, wherein the first reaction process deposits a first monoatomic deposition layer on the surface of the substrate; and continuing to purge the reaction chamber after the first reaction process is completed; S500, controlling the second air inlet valve and the second flowmeter to start a second reaction process, wherein the second reaction process deposits a second monoatomic deposition layer on the surface of the substrate; and continuing to purge the reaction chamber after the second reaction process is completed; S600, controlling the first reaction process and the second reaction process to be cyclically performed alternately for several times, thereby forming an atomic deposition layer on the surface of the substrate; S700, controlling the third air inlet valve and the third flow meter to start a third reaction process, wherein the third reaction process deposits a Pylaron film layer on the surface of the substrate; after the third reaction process is completed, the reaction chamber is continuously purged; S800, looping through steps S600 and S700 until an ALD-Parylene composite film layer having a preset thickness is deposited on the substrate surface; wherein the order of steps S600 and S700 can be reversed; S900 , turning off the second power heating component and the fourth power heating component, and controlling the third flow meter to start, so as to quickly cool down the reaction chamber.

9. An ALD-Parylene composite film layer, characterized in that: It is prepared based on the deposition method as claimed in claim 8.

10. The ALD-Parylene composite film according to claim 9, characterized in that: include: An atomic deposition layer and a Pylaron film layer are sequentially formed on the surface of the substrate; Alternatively, a Palaren film layer and an atomic deposition layer are sequentially formed on the surface of the substrate; Alternatively, an atomic deposition layer, a Pylaron film layer, and an atomic deposition layer are sequentially formed on the surface of the substrate; Alternatively, an alternating film layer structure of multiple atomic deposition layers and multiple Palalon film layers is sequentially formed on the surface of the substrate, and the number of the atomic deposition layers and the Palalon film layers is greater than or equal to 2.

Images