Substrate processing device

Abstract

The invention relates to the technical field of electronic manufacturing, and discloses a substrate processing device which comprises a copper deposition tank, one side of the copper deposition tank is connected with a conduction device and a transmission device in a penetrating mode, one side of the transmission device is in transmission connection with a water flow monitoring device, and one side of the transmission device is in transmission connection with an automatic nozzle device. The water flow monitoring device comprises a flow speed fan, a fan blade transmission rod is movably installed in the flow speed fan, a telescopic groove is formed in the outer side of the fan blade transmission rod, and a telescopic spring is fixedly connected into the telescopic groove. The automatic nozzle devices are opened and closed one by one, the flow velocity of the solution is controlled, the solution and impurities deposited at the bottom of the copper deposition tank are sucked into the filter bin through the conduction device, uniform distribution of a copper layer is facilitated, the solution in the copper deposition tank is stirred through the automatic nozzle devices, and the flow velocity of the solution is controlled.

Description

Technical Field

[0001] The present invention relates to the technical field of electronic manufacturing, and more particularly to a substrate processing device. Background Art

[0002] A substrate processing device is a special equipment, whose functions mainly include physical or chemical processing such as cleaning, etching, and coating of circuit board substrates; its main processing steps are cleaning and pre-treatment to remove contaminants on the substrate surface, surface treatment to improve the adhesion of the substrate surface and prepare for subsequent pattern transfer and thin film deposition, pattern transfer and lithography to transfer the designed circuit or pattern onto the substrate surface, etching to remove the substrate material not protected by the photoresist to form a circuit or structure, electroplating and metallization to thicken the circuit conductors or achieve interlayer connection, solder mask and character printing to protect the non-welding areas and prevent short circuits or oxidation, etc.

[0003] Among them, electroplating and metallization are divided into electroless copper plating, electroplated copper plating, and conductive adhesive copper plating. Among them, electroless copper plating is the main copper plating method nowadays. Electroless copper plating mainly immerses the substrate into a copper plating bath after a series of steps of treatment, and conducts a chemical reduction reaction in the bath to deposit a copper layer on the non-conductive parts of the substrate. In particular, chemical treatment is more suitable for large-area, non-conductive substrates and complex reaction scenarios, and is the mainstream technology for semiconductor cleaning and thin film deposition.

[0004] Existing electroless copper plating equipment makes the chemical solution undergo an autocatalytic reduction reaction through stirring. However, due to the substrates and impurities generated by the reduction reaction, the copper layer attached to the substrates will be uneven, the coating will be rough, and the conductivity of the substrates will decrease; Among them, the stirring method mostly adopts turbine stirring. This stirring method can well plate copper on large areas that need to be attached. However, due to the stirring direction problem, small holes on the substrates cannot be evenly plated with copper, affecting the subsequent processes; Secondly, the stirring rate in the copper plating bath can ensure the uniform distribution of the solution, avoid uneven copper deposition caused by too high or too low local concentration. Too low flow rate may cause the solution to stagnate and affect the reaction efficiency. However, the flow rate is not the higher the better. Too high flow rate may lead to uneven copper deposition and even wash away the uncured copper layer, and the flow rate needs to be controlled.

[0005] In summary, there is an urgent need for a substrate processing device with a controllable flow rate and a filtering mechanism. Summary of the Invention

[0006] In order to overcome the above-mentioned defects of the prior art, the present invention provides a substrate processing device to solve the problems existing in the above-mentioned background art.

[0007] To achieve the above object, the present invention provides the following technical solution: a substrate processing device, including a copper deposition tank, one side of the copper deposition tank is connected through a conduction device and a transmission device, one side of the transmission device is drivingly connected to a water flow monitoring device, and one side of the transmission device is drivingly connected to an automatic nozzle device; The water flow monitoring device includes a flow velocity fan, a one-way transmission buckle is fixedly connected to the inner side of the flow velocity fan, a fan blade transmission rod is movably installed inside the flow velocity fan, a telescopic groove is opened on the outer side of the fan blade transmission rod, a telescopic spring is fixedly connected to the inside of the telescopic groove, and a telescopic buckle is movably connected to the top of the telescopic spring.

[0008] Furthermore, the copper deposition tank includes a copper deposition tank body, a nozzle port transmission hole is opened on one side of the copper deposition tank body, a sliding groove is opened on one side of the copper deposition tank body, a fan blade transmission hole is opened on one side of the copper deposition tank body, and a diversion pipe groove is opened at the bottom of the copper deposition tank body.

[0009] Furthermore, a diversion pipe is fixedly installed inside the diversion pipe groove, one end of the diversion pipe is fixedly connected to a pressure pump, an output pipe is fixedly connected to the top of the pressure pump, output branch pipes are fixedly connected to both sides of the output pipe, a filter chamber is fixedly connected to the top of the output branch pipe, and a filter chamber output hole is opened on one side of the filter chamber.

[0010] Furthermore, the transmission device includes a threaded pipe, a hollow telescopic rod is movably connected to the outer side of the threaded pipe, a hollow transmission gear is fixedly connected to one end of the hollow telescopic rod, a transmission rack is drivingly connected to the top of the hollow transmission gear, a limiting plate is fixedly connected to the bottom of the transmission rack, a transmission gear is drivingly connected to the top of the transmission rack, and a fan blade transmission rod is fixedly connected to one side of the transmission gear.

[0011] Furthermore, a fixed outer shell is fixedly connected to the inner side of the copper deposition tank body, a fan blade fixing plate is fixedly connected to one side of the fixed outer shell, a transmission gear is fixedly connected to one side of the fan blade transmission rod, the other side of the fan blade transmission rod is movably connected to the fan blade fixing plate, and the center of the fan blade transmission rod is drivingly connected to the flow velocity fan.

[0012] Furthermore, a transmission ring is fixedly connected to one end of the hollow telescopic rod, a clamping arm rod one is movably connected to one side of the transmission ring, one end of the clamping arm rod one is movably connected to a clamping arm rod two, the middle of the clamping arm rod two is movably connected to a fixed rod, a nozzle pipe is fixedly connected to the bottom of the fixed rod, and a nozzle is movably connected to one end of the clamping arm rod two.

[0013] Further, when the nozzle is closed, the first clamping arm rod forms a 30° angle with the nozzle pipe. At this time, the inner sides of the nozzles are in close contact and in a closed state. When the transmission ring moves towards the side where the hollow telescopic rod is located, the angle formed by the nozzle pipe and the first clamping arm rod gradually decreases until the first clamping arm rod is parallel to the nozzle pipe. At this time, the opening degree of the nozzle is the maximum; one end of the second clamping arm rod is affected by the first clamping arm rod and moves up and down in the opposite direction with the fixed rod as the fulcrum, and the nozzle moves synchronously with the other side of the second clamping arm rod.

[0014] Further, two sets of the transmission devices are provided on the outer side wall of the copper deposition tank body. A transmission rack is slidably connected to the outer wall of the copper deposition tank body. The transmission rack controls two automatic nozzle devices and a water flow monitoring device. When the transmission rack moves inward, the automatic nozzle devices are closed one by one from outside to inside. A lateral limiting plate is fixedly connected to the bottom of the transmission rack. When the lateral limiting plate contacts the outer hollow transmission gear, the inner bottom of the transmission rack drives the inner hollow transmission gear to move.

[0015] Further, the water flow monitoring devices are symmetrically installed on the inner wall of the copper deposition tank body. The middle of the fan blade transmission rod passes through and is movably installed in the fan blade transmission hole. There are four automatic nozzle devices in total, which are symmetrically distributed inside the copper deposition tank body. The hollow telescopic rod passes through and is movably installed inside the nozzle orifice transmission hole.

[0016] The technical effects and advantages of the present invention: 1. By providing a water flow monitoring device, the present invention monitors the flow rate of the solution inside the copper deposition tank through a flow rate fan. When the flow rate of the solution is too fast, the fan rotates faster; on the contrary, the rotation speed decreases. The information is fed back to the transmission device, and the automatic nozzle devices are opened and closed one by one, so as to control the flow rate of the solution, which is beneficial to reducing the uneven deposition of the copper layer caused by too fast flow rate, as well as the insufficient chemical reaction of the solution and the solution retention phenomenon caused by too slow flow rate, ensuring the uniform distribution of the solution, avoiding uneven copper deposition caused by too high or too low local concentration, and strengthening the uniformity of copper plating on the substrate.

[0017] 2. By providing a conduction device, the present invention sucks the solution and impurities deposited at the bottom of the copper deposition tank through a pressure pump, passes through the output pipe and the branch pipe, and enters the filter bin to filter the impurities, reducing the proportion of impurities in the solution, which is beneficial to the uniform distribution of the copper layer, and reducing the mechanical maintenance cost and the reduction of production efficiency caused by impurity blockage.

[0018] 3. The present invention is provided with an automatic nozzle device, which sprays a solution through the nozzles to agitate the solution in the copper deposition tank. Secondly, the arrangement and direction of the nozzles enable the sprayed solution to better adhere to the substrate. And through the transmission of the water flow monitoring device, the nozzles are closed one by one to control the flow rate of the solution. When the flow rate does not reach the threshold value, affected by the water pressure, the nozzles are opened one by one, which is conducive to the automatic control of the solution flow rate in the tank, reduces the influence caused by adjusting parameters, and improves the production efficiency and the uniformity of copper layer adhesion. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 is a schematic diagram of the overall structure of the present invention; Figure 2 is a schematic diagram of the interior of the overall structure of the present invention; Figure 3 is a schematic cross-sectional view of the copper deposition tank of the present invention; Figure 4 is a schematic diagram of the conduction device of the present invention; Figure 5 is a schematic diagram of the transmission device of the present invention; Figure 6 is a schematic diagram of the water flow monitoring device of the present invention; Figure 7 is a schematic diagram of the fan blade transmission of the present invention; Figure 8 For this Figure 7 magnified schematic diagram at location A; Figure 9 is a schematic cross-sectional view of the fan blade transmission rod of the present invention; Figure 10 is a schematic diagram of the automatic nozzle device of the present invention; The reference numerals are: 1, copper deposition tank; 101, copper deposition tank body; 102, nozzle orifice transmission hole; 103, sliding groove; 104, fan blade transmission hole; 105, diversion pipe groove; 2, conduction device; 201, diversion pipe; 202, pressure pump; 203, output pipe; 204, output branch pipe; 205, filter chamber; 206, filter chamber output hole; 3, transmission device; 301, threaded pipe; 302, hollow transmission gear; 303, hollow telescopic rod; 304, transmission rack; 305, limit plate; 306, transmission gear; 4, water flow monitoring device; 401, fixed housing; 402, fan blade fixing plate; 403, flow rate fan; 404, fan blade transmission rod; 405, telescopic buckle; 406, one-way transmission buckle; 407, telescopic groove; 408, telescopic spring; 5, automatic nozzle device; 501, transmission ring; 502, nozzle pipe; 503, clamping arm rod one; 504, clamping arm rod two; 505, fixed rod; 506, nozzle. DETAILED DESCRIPTION OF THE INVENTION

[0020] The technical solutions in the present invention will be clearly and completely described below in conjunction with the accompanying drawings of the present invention. In addition, the forms of the various structures described in the following embodiments are merely examples, and a substrate processing apparatus according to the present invention is not limited to the various structures described in the following embodiments. All other embodiments obtained by those of ordinary skill in the art without creative efforts fall within the scope of protection of the present invention.

[0021] Referring to Figure 1 、 2 Figures 6 - 8, the present invention provides a substrate processing apparatus, including a copper deposition tank 1. One side of the copper deposition tank 1 is connected through a conduction device 2 and a transmission device 3. One side of the transmission device 3 is drivingly connected to a water flow monitoring device 4, and one side of the transmission device 3 is drivingly connected to an automatic nozzle device 5; The solution in the copper deposition tank body 101 is sucked and split into the output branch pipes 204 through the conduction device 2, filtered and then enters the threaded pipe 301, is transported to the nozzle pipe 502 by the threaded pipe 301, and then sprayed out from the nozzle 506. If the nozzle 506 is in a closed state at this time, the water pressure squeezes the inner wall of the nozzle 506, forcing the nozzle 506 to be in a state of about to open, but it is in a closed state due to the restriction of the second clamping arm rod 504. When the second clamping arm rod 504 does not exert force on the nozzle 506, the nozzle 506 opens under the influence of the water pressure, sprays the solution onto the substrate placed inside the copper deposition tank body 101, and stirs the solution inside the copper deposition tank body 101.

[0022] A one - way transmission buckle 406 is fixedly connected to the inner side of the flow velocity fan 403. A fan blade transmission rod 404 is movably installed inside the flow velocity fan 403. A telescopic groove 407 is opened on the outer side of the fan blade transmission rod 404. A telescopic spring 408 is fixedly connected inside the telescopic groove 407. The top of the telescopic spring 408 is movably connected to a telescopic buckle 405; When the flow velocity fan 403 is affected by the water flow and rotates the fan blades counterclockwise, the vertical surfaces of the telescopic buckle 405 and the one - way transmission buckle 406 abut against each other, driving the fan blade transmission rod 404 to rotate. When the fan blades rotate clockwise, the arc surface of the telescopic buckle 405 contacts the arc surface of the one - way transmission buckle 406, contracting the telescopic buckle 405 downward. When the contact between the two ends, the telescopic buckle 405 is reset under the tension of the telescopic spring 408.

[0023] Referring to Figure 3, the copper deposition tank 1 includes a copper deposition tank body 101. A nozzle port transmission hole 102 is provided on one side of the copper deposition tank body 101, a sliding groove 103 is provided on one side of the copper deposition tank body 101, a fan blade transmission hole 104 is provided on one side of the copper deposition tank body 101, and a diversion pipe groove 105 is provided at the bottom of the copper deposition tank body 101; the holes provided on the side of the copper deposition tank 1 are all sealed. This sealing treatment is prior art and is not shown in the figure. This sealing treatment prevents the leakage of chemical liquids in the copper deposition tank 1. The bottom of the copper deposition tank body 101 is set in a "V" shape, and the suction port of the diversion pipe 201 is arranged at the lowest point of the "V" bottom.

[0024] Refer to Figure 4 , the present invention provides a substrate processing device. A diversion pipe 201 is fixedly installed inside the diversion pipe groove 105. One end of the diversion pipe 201 is fixedly connected to a pressure pump 202. The top of the pressure pump 202 is fixedly connected to an output pipe 203. Output branch pipes 204 are fixedly connected to both sides of the output pipe 203. The top of the output branch pipe 204 is fixedly connected to a filter chamber 205. A filter chamber output hole 206 is provided on one side of the filter chamber 205; the liquid in the tank is sucked by the pressure generated by the pressure pump 202, passes through the diversion pipe 201 and the output pipe 203, enters the output branch pipe 204, and is filtered by the filter chamber 205. A filter grid is provided inside the filter chamber 205, and the filtered liquid then flows out through the filter chamber output hole 206.

[0025] Refer to Figure 5 , the present invention provides a substrate processing device. The transmission device 3 includes a threaded pipe 301. A hollow telescopic rod 303 is movably connected to the outside of the threaded pipe 301. One end of the hollow telescopic rod 303 is fixedly connected to a hollow transmission gear 302. The top of the hollow transmission gear 302 is drivingly connected to a transmission rack 304. A limiting plate 305 is fixedly connected to the bottom of the transmission rack 304. The top of the transmission rack 304 is drivingly connected to a transmission gear 306. A fan blade transmission rod 404 is fixedly connected to one side of the transmission gear 306; the hollow transmission gear 302 wraps the threaded pipe 301. When the fan blade transmission rod 404 drives the transmission gear 306 to rotate, the transmission gear 306 drives the transmission rack 304, causing the transmission rack 304 to translate and slide along the sliding groove 103 with the two ends of the sliding groove 103 as the limiting endpoints. The bottom of the transmission rack 304 drives the hollow transmission gear 302 and the hollow telescopic rod 303 to rotate. A threaded groove is provided inside the hollow telescopic rod 303, causing the hollow telescopic rod 303 to move along the thread on the surface of the threaded pipe 301. The length of the sliding groove 103 does not exceed half of the side width of the copper deposition tank body 101, and the two sliding grooves 103 are not connected.

[0026] Refer to Figures 6 - 9, the present invention provides a substrate processing device. A fixed outer shell 401 is fixedly connected to the inner side of the copper deposition tank body 101. A fan blade fixing plate 402 is fixedly connected to one side of the fixed outer shell 401. A transmission gear 306 is fixedly connected to one side of the fan blade transmission rod 404. The other side of the fan blade transmission rod 404 is movably connected to the fan blade fixing plate 402. A flow velocity fan 403 is centrally connected to the fan blade transmission rod 404 for transmission.

[0027] Refer to Figure 10 , the present invention provides a substrate processing device. A transmission ring 501 is fixedly connected to one end of the hollow telescopic rod 303. A first clamping arm rod 503 is movably connected to one side of the transmission ring 501. One end of the first clamping arm rod 503 is movably connected to a second clamping arm rod 504. The middle part of the second clamping arm rod 504 is movably connected to a fixed rod 505. A nozzle pipe 502 is fixedly connected to the bottom of the fixed rod 505. One end of the second clamping arm rod 504 is movably connected to a nozzle 506; the hollow telescopic rod 303 pushes the transmission ring 501 to move towards the nozzle, squeezing the first clamping arm rod 503. The connection part of the first clamping arm rod 503 and the second clamping arm rod 504 moves outwards. Due to the fixed rod 505, the other end of the second clamping arm rod 504 moves downwards to close the nozzle 506. When the hollow telescopic rod 303 moves towards the other end, the nozzle 506 opens.

[0028] Refer to Figure 10 , when the nozzle 506 is closed, the first clamping arm rod 503 forms a 30° angle with the nozzle pipe 502. At this time, the inner side of the nozzle 506 is closely attached and in a closed state. When the transmission ring 501 moves towards the side where the hollow telescopic rod 303 is located, the angle formed by the nozzle pipe 502 and the first clamping arm rod 503 gradually decreases until the first clamping arm rod 503 is parallel to the nozzle pipe 502. At this time, the opening degree of the nozzle 506 is the maximum value; one end of the second clamping arm rod 504 is affected by the first clamping arm rod 503 and moves up and down in the opposite direction with the fixed rod 505 as the fulcrum. The nozzle 506 moves synchronously with the other side of the second clamping arm rod 504; the opening size of 506 is proportional to the flow velocity of the solution in 101. When all four 506 are closed, the solution tends to a static state.

[0029] Refer to Figure 2 , 3, 5. There are two transmission devices 3 in total on the outer side wall of the copper deposition tank body 101. The outer wall of the copper deposition tank body 101 is slidably connected with a transmission rack 304. The transmission rack 304 controls two automatic nozzle devices 5 and a water flow monitoring device 4. When the transmission rack 304 moves inward, the automatic nozzle devices 5 are closed one by one from outside to inside. The bottom of the transmission rack 304 is fixedly connected with an outer limiting plate 305. When the outer limiting plate 305 contacts the outer hollow transmission gear 302, the inner bottom of the transmission rack 304 drives the inner hollow transmission gear 302 to move; the outer nozzle 506 is closed first. The inner nozzle 506 is closer to the substrate placed in the copper deposition tank body 101. When the solution flow rate is too large, the outer nozzle 506 is closed to reduce the solution flow rate in the copper deposition tank body 101.

[0030] Refer to Figure 1 , 3 , the water flow monitoring device 4 is symmetrically installed on the inner wall of the copper deposition tank body 101. The middle of the fan blade transmission rod 404 passes through and is movably installed in the fan blade transmission hole 104. There are four automatic nozzle devices 5 in total, which are symmetrically distributed inside the copper deposition tank body 101. The inside of the nozzle orifice transmission hole 102 passes through and is movably installed in the hollow expansion rod 303; the two ends of the nozzle orifice transmission hole 102 are of different sizes. The inner size is the same as the diameter of the hollow expansion rod 303. The outer side is the same as the maximum diameter of the hollow transmission gear 302 to accommodate the expansion and contraction of the hollow transmission gear 302, and its depth is the same as the length of the hollow transmission gear 302. The fan blade transmission hole 104 is the same as the diameter of the fan blade transmission rod 404. The inner walls of the fan blade transmission hole 104 and the nozzle orifice transmission hole 102 have anti-leakage measures.

[0031] The working principle of the present invention: After the pressure pump 202 starts to operate, the chemical liquid in the copper deposition tank body 101 is sucked into the output pipe 203 through the diversion pipe 201, and then is branched into four branch pipes of the output branch pipe 204 through the top of the output pipe 203 and enters the filter chamber 205. The impurities brought by the substrate are filtered through the filter chamber output hole 206. When the "V"-shaped groove of the copper deposition tank body 101 is static, the impurities are precipitated. When the pressure pump 202 operates, the impurities are sucked in for filtration. A replaceable filter grille is provided in the filter chamber 205; The filtered chemical liquid enters the threaded tube 301 and the nozzle tube 502. Under the action of the pressure applied by the pressure pump 202, the nozzle 506 opens, and the filtered liquid is sprayed into the copper deposition tank 101. After the nozzle 506 opens, the second drive clamp arm rod 504 and the first clamp arm rod 503 push the drive ring 501 and the hollow telescopic rod 303 backward. The hollow telescopic rod 303 rotates and moves along the thread on the threaded tube 301, driving the hollow drive gear 302 to rotate, driving the drive rack 304 to move to one side, and causing the drive gear 306 and the fan drive rod 404 to move, so that the arc surfaces of the expansion buckle 405 and the one-way drive buckle 406 are in contact. The expansion buckle 405 contracts into the fan drive rod 404 and does not drive the flow rate fan 403 to rotate; After the chemical liquid is sprayed from the nozzle 506, the flow rate of the liquid inside the copper deposition tank 101 increases, which affects the rotation of the flow rate fan 403, causing the flow rate fan 403 to rotate at an accelerated speed. When the liquid flow rate exceeds the required liquid flow rate for the copper deposition step, that is, after the force required for the flow rate fan 403 to rotate under the influence of the water flow, the vertical surface of the one-way drive buckle 406 contacts the vertical surface of the expansion buckle 405, driving the fan drive rod 404 and the drive gear 306 to rotate. Under the rotational movement of the drive gear 306, the drive rack 304 moves. The movement of the drive rack 304 first affects the outer nozzle 506. The bottom teeth of the drive rack 304 push the hollow drive gear 302 towards the nozzle 506. After the hollow drive gear 302 moves to a certain position, that is, when the hollow drive gear 302 cannot move forward, the limit plate 305 also reaches the end of the hollow drive gear 302 and limits its position; The hollow drive gear 302 drives the hollow telescopic rod 303 and pushes the drive ring 501 towards the nozzle, squeezing the first clamp arm rod 503. The connection between the first clamp arm rod 503 and the second clamp arm rod 504 moves outward. Due to the fixed rod 505, the other end of the second clamp arm rod 504 moves downward to close the nozzle 506. After the nozzle 506 is closed, the other teeth at the bottom of the drive rack 304 will act on another hollow drive gear 302.

[0032] The above are only the preferred embodiments of the present invention and are not used to limit the present invention. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present invention shall be included within the protection scope of the present invention.

Claims

1. A substrate processing device, comprising a copper deposition tank (1), characterized in that: A conducting device (2) and a transmission device (3) are connected through one side of the copper sink (1); a water flow monitoring device (4) is connected to one side of the transmission device (3); and an automatic nozzle device (5) is connected to one side of the transmission device (3); The water flow monitoring device (4) comprises a flow velocity fan (403), the inner side of the flow velocity fan (403) is fixedly connected to a one-way transmission buckle (406), a blade transmission rod (404) is movably installed inside the flow velocity fan (403), a telescopic groove (407) is provided on the outer side of the blade transmission rod (404), a telescopic spring (408) is fixedly connected inside the telescopic groove (407), and the top of the telescopic spring (408) is movably connected to the telescopic buckle (405).

2. The substrate processing device according to claim 1, characterized in that: The copper sinking tank (1) comprises a copper sinking tank body (101), a nozzle opening transmission hole (102) is provided on one side of the copper sinking tank body (101), a sliding groove (103) is provided on one side of the copper sinking tank body (101), a fan blade transmission hole (104) is provided on one side of the copper sinking tank body (101), and a guide pipe groove (105) is provided at the bottom of the copper sinking tank body (101).

3. The substrate processing device according to claim 2, characterized in that: A flow guide pipe (201) is fixedly installed inside the flow guide pipe groove (105); one end of the flow guide pipe (201) is fixedly connected to a pressure pump (202); the top of the pressure pump (202) is fixedly connected to an output pipe (203); both sides of the output pipe (203) are fixedly connected to output branch pipes (204); the top of the output branch pipe (204) is fixedly connected to a filter bin (205); and one side of the filter bin (205) is provided with a filter bin output hole (206).

4. The substrate processing device according to claim 1, characterized in that: The transmission device (3) comprises a threaded tube (301), the outer side of the threaded tube (301) is movably connected to a hollow telescopic rod (303), and one end of the hollow telescopic rod (303) is fixedly connected to a hollow transmission gear (302).

5. The substrate processing device according to claim 2, characterized in that: The inner side of the copper-plated tank body (101) is fixedly connected to a fixed shell (401), one side of the fixed shell (401) is fixedly connected to a fan blade fixing plate (402), one side of the fan blade transmission rod (404) is fixedly connected to a transmission gear (306), the other side of the fan blade transmission rod (404) is movably connected to the fan blade fixing plate (402), and the center transmission of the fan blade transmission rod (404) is connected to a flow rate fan (403).

6. The substrate processing device according to claim 4, characterized in that: One end of the hollow telescopic rod (303) is fixedly connected to a transmission ring (501), one side of the transmission ring (501) is movably connected to a clamping arm rod 1 (503), one end of the clamping arm rod 1 (503) is movably connected to a clamping arm rod 2 (504), the middle of the clamping arm rod 2 (504) is movably connected to a fixing rod (505), the bottom of the fixing rod (505) is fixedly connected to a nozzle tube (502), and one end of the clamping arm rod 2 (504) is movably connected to a nozzle (506).

7. The substrate processing device according to claim 6, characterized in that: When the nozzle (506) is closed, the first clamping arm rod (503) forms an angle of 30° with the nozzle pipe (502). At this time, the inner sides of the nozzles (506) are in close contact and in a closed state. When the transmission ring (501) moves towards the side where the hollow telescopic rod (303) is located, the angle formed by the nozzle pipe (502) and the first clamping arm rod (503) gradually decreases until the first clamping arm rod (503) is parallel to the nozzle pipe (502). At this time, the opening degree of the nozzle (506) is the maximum. One end of the second clamping arm rod (504) is affected by the first clamping arm rod (503) and moves up and down in the opposite direction with the fixed rod (505) as the fulcrum. The nozzle (506) moves synchronously with the other side of the second clamping arm rod (504).

8. The substrate processing device according to claim 4, characterized in that: Two transmission devices (3) are provided on the outer side wall of the copper deposition tank body (101). A transmission rack (304) is slidably connected to the outer wall of the copper deposition tank body (101). The transmission rack (304) controls two automatic nozzle devices (5) and a water flow monitoring device (4). When the transmission rack (304) moves inward, the automatic nozzle devices (5) are closed one by one from the outside to the inside. A lateral limit plate (305) is fixedly connected to the bottom of the transmission rack (304). When the lateral limit plate (305) contacts the outer hollow transmission gear (302), the inner bottom of the transmission rack (304) drives the inner hollow transmission gear (302) to move.

9. The substrate processing device according to claim 5, characterized in that: The water flow monitoring device (4) is symmetrically installed on the inner wall of the copper deposition tank body (101). The middle of the fan blade transmission rod (404) passes through and is movably installed in the fan blade transmission hole (104). Four automatic nozzle devices (5) are provided and are symmetrically distributed inside the copper deposition tank body (101). The hollow telescopic rod (303) passes through and is movably installed inside the nozzle orifice transmission hole (102).

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