Method and system for adjusting detonation control chip

Abstract

The invention relates to the technical field of initiating explosive device detonating, and discloses a detonating control chip adjusting method and system. The adjustment and calibration method is applied to the control chip adjustment and calibration equipment and specifically comprises the following steps that S101, a control chip adjustment and calibration request sent by a terminal is received, and the control chip adjustment and calibration request comprises a Tr imCode code pre-implanted in a control chip and target parameters of control chip adjustment and calibration; s102, acquiring a Tr imCode code, performing circuit simulation on an oscillator on the designed control chip, acquiring a temperature drift simulation result of the oscillator, and determining whether the temperature drift simulation result of the oscillator can counteract a deviation introduced by a process corner parameter or not; s103, if it is determined that the temperature drift simulation result of the oscillator can counteract the deviation introduced by the process corner parameters. An isolation protection circuit of a high-voltage circuit, a digital circuit and an analog circuit is designed for the control chip, circuit isolation and power isolation are adopted, and efficient high-voltage high-power control and high-precision timing control functions are achieved respectively.

Description

Technical Field

[0001] The present invention relates to the technical field of initiating explosive devices, and more particularly, to a method and system for calibrating an initiating control chip. Background Art

[0002] Existing electric detonator initiators generally use a series or series-parallel combination of electric detonator networks. When thousands of electric detonators are connected in series, to ensure that all electric detonators in the network can be detonated simultaneously, the electric detonator initiator should be able to instantaneously generate a current of one to several amperes. This current must be greater than the series detonation current of each electric detonator. Otherwise, phenomena such as misfiring and partial detonation will occur. The resistance of a single electric detonator is generally about one to several ohms. Therefore, the above-mentioned electric detonator initiator needs to have a boost circuit and be able to provide an output voltage in the kilovolt range.

[0003] However, in the prior art, when the initiating control chip receives a signal, it often causes inaccurate parameter delay accuracy, resulting in a large timing accuracy error. The system design goal is a timing accuracy of <±5ppm. Due to the presence of 30V high voltage and high-power devices in the system, the circuit noise is large, which has an adverse effect on the high-precision measurement part. Therefore, it is urgent to solve the above problems. Summary of the Invention

[0004] The purpose of the present invention is to provide a method and system for calibrating an initiating control chip. By designing isolation protection circuits for high-voltage, digital, and analog circuits of the control chip, and using circuit isolation and power supply isolation, high-efficiency high-voltage high-power control and high-precision timing control functions are respectively realized, aiming to solve the problems in the prior art.

[0005] The present invention is implemented as follows. A method for calibrating an initiating control chip is applied to a control chip calibration device, and specifically includes the following steps:

[0006] S101: Receive a control chip calibration request sent by a terminal. The control chip calibration request includes the Trim_Code code pre-implanted in the control chip and the target parameters for calibrating the control chip.

[0007] S102: Obtain the Trim_Code code, perform circuit simulation on the oscillator on the designed control chip, and obtain the oscillator temperature drift simulation result. Determine whether the oscillator temperature drift simulation result can offset the deviation introduced by the process corner parameters.

[0008] S103: If it is determined that the oscillator temperature drift simulation result can offset the deviation introduced by the process corner parameters, conduct a test in the control chip wafer stage, find a set of Trim_Code with the smallest temperature drift, and adjust the Trim_Code parameter value of the current control chip.

[0009] S104: Conduct tests on the adjustment of the Trim_Code parameter value of the current control chip. Automatically test the frequency deviation at each temperature point through a constant-temperature environment, determine the frequency deviation value, and write it into the NVM on the control chip to complete the determination of the factory configuration parameters of the control chip;

[0010] S105: Simulate the parameter adjustment during the operation of the control chip. According to the current operating temperature, calculate the corresponding adjustment value through a look-up table or interpolation algorithm, and revise the counter output result to achieve high-precision delay adjustment.

[0011] Further, receive the control chip adjustment request sent by the terminal, including:

[0012] Receive the adjustment connection request sent by the terminal through a preset network. The adjustment connection request is used to request to establish a connection with the control chip adjustment device;

[0013] Detect whether the current account of the terminal is the only target account;

[0014] If the current account of the user terminal is the only target account, connect to the terminal according to the adjustment connection request. After the connection is completed, receive the control chip adjustment request sent by the terminal.

[0015] Further, the preset network includes one or a combination of 3G network, 4G network, 5G network, and WIFI network.

[0016] Further, in S102, obtain the Trim_Code code, conduct circuit simulation on the oscillator on the designed control chip, and obtain the oscillator temperature drift simulation results, including:

[0017] Within the full temperature range of -60°C to 100°C of the oscillator, the maximum temperature drift of the oscillator under each Trim_Code condition is 2.24%, the minimum temperature drift is 0.42%, and the temperature coefficient is < ±300 ppm / °C, meeting the technical indicators set for the HV control chip by the system and leaving a large design margin;

[0018] In the first stage, the oscillator design meets the standards, and then the control chip conducts Trim_Code calibration and full-temperature point calibration improvement. The calibration improvement method is: under the condition of a constant 1.8V voltage, design a high-precision on-chip oscillator with an unadjusted full-range temperature drift of < ±0.5%, and the temperature coefficient is approximately: ±33 ppm / °C; under a ±0.25V voltage deviation, the frequency change coefficient at 25°C is: ±0.4% / V, achieving a temperature coefficient of ±40 ppm / °C and a calibration step size of 0.1°C.

[0019] Further, the control chip conducts Trim_Code calibration and full-temperature point calibration improvement, including:

[0020] A two - stage LDO isolation design is set up. The first stage is a 3.3V LDO, and the second stage is a 1.8V LDO. And the oscillator operates in the 1.8V voltage domain, with the power supply voltage rejection ratio of the 1.8V LDO;

[0021] A high - precision temperature compensation algorithm is set up. The PN - junction type temperature - voltage change parameter ΔVbe output by the Bandgap is multiplexed. This signal is conditioned and amplified, and outputs a 0.2 - 2.5V voltage signal in the range of - 60°C - 90°C. A ΔΣADC with an equivalent accuracy of 16 Bits is designed to output a digital temperature signal. A frequency - temperature generation function is designed. According to the measured temperature and ADC readings, a high - density full - temperature calibration algorithm is adopted. Through interpolation and compensation algorithms, a frequency - temperature compensation curve is generated, and the compensation value for each batch is determined through multiple experiments and written into the NVM of the control chip.

[0022] Further, in S103, a set of Trim_Code with the smallest temperature drift is found through testing, and the Trim_Code parameter value of the current control chip is adjusted, including:

[0023] According to the preset rapid ignition instruction, a high - voltage interface communication protocol is designed and adjusted for the reliability and real - time performance required by the rapid ignition instruction;

[0024] The serial communication baud rate of the high - voltage interface communication protocol is 460KHz. According to the instruction system design, before the host computer issues a rapid ignition instruction, baud rate self - adaptation and pre - configuration commands must be performed. After the command execution is completed, the control chip enters the state of waiting for the rapid instruction;

[0025] After the instruction reception is completed, the control circuit drives the switching MOS transistor to perform the ignition operation, and the ignition action can be completed within the specified preset time, that is, the Trim_Code parameter value of the current control chip is adjusted.

[0026] Further, the frequency deviation at each temperature point is automatically tested through a constant - temperature environment. After determining the frequency deviation value, it is written into the NVM on the control chip, including:

[0027] Set the working voltage of the control chip. The control chip has two - stage LDO circuits built - in, which realizes the conversion of the externally input voltage to the local working voltage, and realizes a low - dropout and low - internal - resistance LDO device;

[0028] Set the transient peak current of the control chip. Considering the package limitation and the actual over - current capacity of the circuit, a suitable matching resistor is designed according to the set ignition wire and external loop impedance to limit the transient current;

[0029] Set the operating power consumption of the control chip. Since the low-power scenario occurs during the energy storage capacitor power supply stage, that is, when the high-voltage interface is disconnected and the control chip relies entirely on the external energy storage capacitor for operation, the main power consumption budget at this time is as follows:

[0030] Timer operating current: All-digital circuit, operating under low-voltage conditions, with an operating current of 5 μA;

[0031] LDO operating current: Low-load state, with an operating current of 5 μA;

[0032] Oscillator operating current: 10 μA;

[0033] NVM (2Kx8Bit) operating current: 1.5 mA;

[0034] Temperature sensing ADC operating current < 2 mA;

[0035] Through the above content, determine the factory configuration parameters of the control chip.

[0036] Furthermore, adjust the parameters during the operation of the analog control chip. According to the current operating temperature, calculate the corresponding adjustment value through look-up table or interpolation algorithm, and revise the counter output result, including:

[0037] Set the operating temperature of the control chip, and simulate the control chip entirely within the range of -60°C to 90°C;

[0038] Design the packaging standard of the control chip, using 1 - 1.2 mil, with a packaging size of approximately 1 mm, the gold wire current-carrying capacity > 1.5 A, the fusing current > 2 A @ 5 mS, the copper wire current-carrying capacity > 2 A, the fusing current > 3 A @ 5 mS. According to the set indicators and considering sufficient margin, plan to use copper wire / gold wire, with parallel wire bonding > 5 roots to meet the requirements of the project preset indicators and complete the revision of the adjustment value of the control chip.

[0039] Furthermore, the scheme for designing the packaging of the control chip is as follows:

[0040] Wire bond the S terminal to the base island, with a total of 8 PADs, and actually wire bond at least 5;

[0041] Reserve 12 PADs at the D terminal, and actually wire bond at least 5;

[0042] Use gold wire for wire bonding, with a wire diameter of 25 μM, the fusing current of 1 mm wire bonding = 2.13 A, the fusing time > 5 mS, and 5 wire bondings can withstand 10 A for > 5 ms;

[0043] Reserve enough PADs to meet the design requirements..

[0044] Compared with the prior art, a detonation control chip calibration method and system provided by the present invention have the following beneficial effects:

[0045] 1. By designing an isolation protection circuit for the high-voltage, digital, and analog circuits of the control chip, and adopting circuit isolation and power supply isolation, the functions of efficient high-voltage high-power control and high-precision timing control are respectively realized. At the same time, a medium-precision on-chip oscillator with an uncalibrated full-range temperature drift of <±4.5% is designed, with a temperature coefficient of <±300 ppm / °C, calibrated in steps of 0.3°C, and the calibrated design accuracy is <±100 ppm, that is, a timing accuracy of 0.1‰ (one ten-thousandth) can be achieved after calibration.

[0046] 2. The high-precision timing TC unit of the control chip operates in a low-power, low-noise constant voltage environment powered by a capacitor and isolated by an LDO. A high-precision on-chip oscillator with an uncalibrated full-range temperature drift of <±0.6% is designed, with a temperature coefficient of ±40 ppm / °C, and the calibrated design accuracy is <±4 ppm after calibration in steps of 0.1°C, which has reached the predetermined technical indicators and reserved an engineering margin.

[0047] A detonation control chip calibration system executes the above-mentioned detonation control chip calibration method, and the system includes:

[0048] An acquisition module, configured to receive a control chip calibration request sent by a terminal;

[0049] A simulation module, configured to obtain Trim_Code code, perform circuit simulation on the designed on-chip oscillator of the control chip, and obtain the oscillator temperature drift simulation result;

[0050] A confirmation module, configured to determine whether the oscillator temperature drift simulation result can offset the deviation introduced by process corner parameters;

[0051] An adjustment module, configured to perform tests at the control chip wafer stage, find a set of Trim_Code with the smallest temperature drift, and adjust the Trim_Code parameter value of the current control chip;

[0052] A configuration module, configured to automatically test the frequency deviation at each temperature point through a constant temperature environment, determine the frequency deviation value and write it into the NVM on the control chip to complete the determination of the control chip factory configuration parameters;

[0053] A revision module, configured to calculate the corresponding calibration value through a look-up table or interpolation algorithm, revise the counter output result, and achieve high-precision delay adjustment. Description of the Drawings

[0054] Figure 1 It is a flow schematic block diagram of a detonation control chip calibration method proposed by the present invention;

[0055] Figure 2 It is a flow schematic block diagram for receiving a control chip calibration request sent by a receiving terminal in a control chip calibration method proposed by the present invention;

[0056] Figure 3 It is a flow schematic block diagram for automatically testing the frequency deviation at each temperature point through a constant temperature environment in a control chip calibration method proposed by the present invention, and writing the determined frequency deviation value into the NVM on the control chip after determining the frequency deviation value;

[0057] Figure 4 It is a structural schematic diagram of a control chip calibration system proposed by the present invention. Specific embodiments

[0058] In order to make the objectives, technical solutions and advantages of the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0059] The implementation of the present invention will be described in detail below with reference to specific embodiments.

[0060] In the accompanying drawings of this embodiment, the same or similar reference numerals correspond to the same or similar components; in the description of the present invention, it should be understood that if there are terms such as "upper", "lower", "left", "right", etc. indicating the orientation or positional relationship, they are based on the orientation or positional relationship shown in the accompanying drawings. It is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, the terms describing the positional relationship in the accompanying drawings are only for illustrative purposes and cannot be understood as a limitation of the present invention. For those of ordinary skill in the art, the specific meanings of the above terms can be understood according to specific circumstances.

[0061] Refer to Figures 1-3 As shown, a control chip calibration method is applied to a control chip calibration device, and specifically includes the following steps:

[0062] S101: Receive the control chip calibration request sent by the receiving terminal. The control chip calibration request includes the Trim_Code code pre-implanted in the control chip and the target parameters for calibrating the control chip;

[0063] Among them, the control chip calibration request sent by the receiving terminal includes:

[0064] Receive the calibration connection request sent by the receiving terminal through a preset network. The calibration connection request is used to request to establish a connection with the control chip calibration device;

[0065] Detect whether the current account of the terminal is the only target account;

[0066] If the current account of the user terminal is the only target account, connect to the terminal according to the calibration connection request. After the connection is completed, receive the control chip calibration request sent by the terminal;

[0067] S102: Obtain the Trim_Code code, perform circuit simulation on the oscillator on the designed control chip, and obtain the oscillator temperature drift simulation result to determine whether the oscillator temperature drift simulation result can offset the deviation introduced by the process corner parameters;

[0068] Among them, obtaining the Trim_Code code, performing circuit simulation on the oscillator on the designed control chip, and obtaining the oscillator temperature drift simulation result include:

[0069] The maximum temperature drift of the oscillator under each Trim_Code condition within the full temperature range of -60°C to 100°C is 2.24%, and the minimum temperature drift is 0.42%. The temperature coefficient is <±300ppm / °C, meeting the technical indicators set for the HV control chip by the system and leaving a large design margin;

[0070] In the first stage, when the oscillator design meets the standard, the control chip performs Trim_Code calibration and full temperature point calibration improvement. The calibration improvement method is: under the condition of a constant 1.8V voltage, design a high-precision on-chip oscillator with an uncalibrated full-range temperature drift of <±0.5%, and the temperature coefficient is approximately: ±33ppm / °C; under a ±0.25V voltage deviation, the frequency change coefficient at 25°C is: ±0.4% / V, achieving a temperature coefficient of ±40ppm / °C and a calibration step of 0.1°C;

[0071] S103: If it is determined that the oscillator temperature drift simulation result can offset the deviation introduced by the process corner parameters, perform tests during the control chip wafer stage, find a set of Trim_Code with the smallest temperature drift during the test, and adjust the Trim_Code parameter value of the current control chip;

[0072] Among them, finding a set of Trim_Code with the smallest temperature drift during the test and adjusting the Trim_Code parameter value of the current control chip include:

[0073] According to the preset rapid detonation instruction, a high-voltage interface communication protocol is designed and adjusted for the reliability and real-time performance required by the rapid detonation instruction;

[0074] The serial communication baud rate of the high-voltage interface communication protocol is 460KHz. According to the instruction system design, the host computer must perform baud rate adaptation and pre-configuration commands before sending the rapid detonation instruction. After the command execution is completed, the control chip enters the state of waiting for the rapid instruction;

[0075] After the instruction reception is completed, the control circuit drives the switching MOS transistor to perform the ignition operation, and the ignition action can be completed within the specified preset time, that is, the Tr im_Code parameter value of the current control chip is adjusted;

[0076] S104: After the Tr im_Code parameter value of the current control chip is adjusted, perform a test. Automatically test the frequency deviation of each temperature point through a constant temperature environment. After determining the frequency deviation value, write it into the NVM on the control chip to complete the determination of the factory configuration parameters of the control chip;

[0077] S105: Simulate the parameter tuning during the operation of the control chip. According to the current operating temperature, calculate the corresponding tuning value through look-up table or interpolation algorithm, revise the counter output result, and achieve high-precision delay tuning. By designing an isolation protection circuit for the high-voltage, digital, and analog circuits of the control chip, and adopting circuit isolation and power isolation, respectively achieve efficient high-voltage high-power control and high-precision timing control functions. At the same time, design an on-chip oscillator with a medium precision of uncalibrated full-range temperature drift <±4.5%, a temperature coefficient of <±300ppm / °C, calibrated in steps of 0.3°C, and a calibrated design accuracy of <±100ppm, that is, a timing accuracy of 0.1‰ (one ten-thousandth) can be achieved after calibration.

[0078] In this embodiment, the preset network includes one or a combination of 3G network, 4G network, 5G network, and WIFI network.

[0079] In this embodiment, the control chip further performs Tr im_Code calibration and full-temperature point calibration improvement, including:

[0080] Set a two-stage LDO isolation design, the first stage is 3.3V LDO, the second stage is 1.8V LDO, and the oscillator operates in the 1.8V voltage domain, and the power supply voltage rejection ratio of the 1.8V LDO;

[0081] Set a high-precision temperature compensation algorithm, reuse the PN junction temperature-voltage change parameter ΔVbe output by Bandgap. This signal is conditioned and amplified, and outputs a voltage signal of 0.2 - 2.5V in the range of -60°C - 90°C. Design a ΔΣADC with an equivalent accuracy of 16 Bits to output a digital temperature signal. Design a frequency-temperature generation function. According to the measured temperature and ADC readings, adopt a high-density full-temperature calibration algorithm, and generate a frequency-temperature compensation curve through interpolation and compensation algorithms. Determine the compensation value for each batch through multiple experiments and write it into the NVM of the control chip.

[0082] In this embodiment, automatically test the frequency deviation of each temperature point through a constant temperature environment. After determining the frequency deviation value, write it into the NVM on the control chip, including:

[0083] Set the operating voltage of the control chip. The control chip incorporates a two-stage LDO circuit to achieve the conversion of the externally input voltage to the local operating voltage, realizing a low-dropout and low internal resistance LDO device;

[0084] Set the transient peak current of the control chip. Considering the package limitations and the actual overcurrent capacity of the circuit, design an appropriate matching resistor according to the set ignition wire and external loop impedance to limit the transient current;

[0085] Set the operating power consumption of the control chip. Since the low-power scenario occurs during the energy storage capacitor power supply stage, that is, when the high-voltage interface is disconnected and the control chip relies entirely on the external energy storage capacitor for operation, the main power consumption budget at this time is as follows:

[0086] Timer operating current: all-digital circuit, operating under low voltage conditions, with an operating current of 5 μA;

[0087] LDO operating current: low-load state, with an operating current of 5 μA;

[0088] Oscillator operating current: 10 μA;

[0089] NVM (2Kx8Bit) operating current: 1.5 mA;

[0090] Temperature sensing ADC operating current < 2 mA;

[0091] Through the above content, determine the factory configuration parameters of the control chip.

[0092] Specifically, generate a frequency-temperature compensation curve through interpolation and compensation algorithms, determine the compensation values for each batch through multiple experiments, and write them into the NVM of the control chip. It also includes real-time temperature measurement and timing compensation. When the control chip is running, perform ADC sampling detection once per second. When the core temperature of the control chip reaches the compensation point critical value, update the unit delay frequency of the current timing unit in real time to achieve accurate temperature tracking compensation.

[0093] In this embodiment, simulate the parameter tuning when the control chip is working. According to the current working temperature, calculate the corresponding tuning value through a look-up table or interpolation algorithm, and revise the counter output result, including:

[0094] Set the operating temperature of the control chip, and perform simulations on the control chip all within the range of -60°C to 90°C;

[0095] Design the packaging standard of the control chip, use 1-1.2mil, the package size is about 1mm, the gold wire overcurrent capability is >1.5A, the fuse current is >2A@5mS, the copper wire overcurrent capability is >2A, the fuse current is >3A@5mS. According to the set indicators and considering sufficient margin, it is planned to use copper wire / gold wire, and parallel wires are >5 to meet the project's preset indicator requirements and complete the revision of the control chip's adjustment value.

[0096] In this embodiment, the packaging scheme of the control chip is designed as follows:

[0097] The S end is wired to the base island, with a total of 8 PADs, and at least 5 wires are actually wired;

[0098] 12 PADs are reserved at the D end, and at least 5 wires are actually connected;

[0099] Gold wire bonding is used, wire diameter is 25uM, 1mm bonding wire fusing current = 2.13A, fusing time > 5mS, 5 bonding wires can withstand 10A, > 5ms time;

[0100] Sufficient PADs are reserved to meet the design requirements. By designing isolation protection circuits for high-voltage, digital and analog circuits on the control chip, circuit isolation and power isolation are used to achieve efficient high-voltage and high-power control and high-precision timing control functions respectively.

[0101] The high-precision timing TC unit of the control chip of this technical solution works in a low-power, low-noise constant voltage environment with capacitor power supply and LDO isolation. The high-precision on-chip oscillator with an unadjusted full-range temperature drift of <±0.6% is designed, and the temperature coefficient is ±40ppm / ℃. The design accuracy after adjustment with a step size of 0.1℃ is <±4ppm, which has reached the predetermined technical indicators and reserved an engineering margin.

[0102] Reference Figure 4As shown in the figure, a detonation control chip calibration system executes the above-mentioned detonation control chip calibration method. The system includes: an acquisition module for receiving a control chip calibration request sent by a terminal; a simulation module for obtaining a Trim_Code code, performing circuit simulation on the oscillator on the designed control chip, and obtaining the oscillator temperature drift simulation result; a confirmation module for determining whether the oscillator temperature drift simulation result can offset the deviation introduced by process corner parameters; an adjustment module for testing at the control chip wafer stage, finding a set of Trim_Code with the minimum temperature drift, and adjusting the Trim_Code parameter value of the current control chip; a configuration module for automatically testing the frequency deviation at each temperature point through a constant temperature environment, determining the frequency deviation value and writing it into the NVM on the control chip to complete the determination of the control chip factory configuration parameters; a revision module for calculating the corresponding calibration value through a look-up table or interpolation algorithm, revising the counter output result to achieve high-precision delay adjustment. By designing an isolation protection circuit for the high-voltage, digital, and analog circuits of the control chip, and adopting circuit isolation and power isolation, the functions of efficient high-voltage high-power control and high-precision timing control are respectively realized. Moreover, the high-precision timing TC unit of the control chip operates in a constant voltage environment with low power and low noise powered by a capacitor and isolated by an LDO. A high-precision on-chip oscillator with an uncalibrated full-range temperature drift of <±0.6% is designed, with a temperature coefficient of ±40 ppm / °C, and the calibrated design accuracy is <±4 ppm after calibration in 0.1°C steps, which has reached the predetermined technical indicators and reserved an engineering margin.

[0103] In this embodiment, the entire operation process can be controlled by a computer, plus a PLC, etc., to achieve automated operation control. And in each operation link, signal feedback is realized by setting sensors to achieve sequential execution of steps. These are all common knowledge of current automated control and will not be elaborated one by one in this embodiment.

[0104] The above are only the preferred embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent replacements, and improvements made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A method for calibrating an initiating control chip, characterized in that, Applied to a control chip calibration device, specifically including the following steps: S101: Receive a control chip calibration request sent by a terminal. The control chip calibration request includes a Trim_Code code pre-implanted in the control chip and target parameters for calibrating the control chip; S102: Obtain the Trim_Code code, perform circuit simulation on the oscillator on the designed control chip, obtain the oscillator temperature drift simulation result, and determine whether the oscillator temperature drift simulation result can offset the deviation introduced by the process corner parameters; S103: If it is determined that the oscillator temperature drift simulation result can offset the deviation introduced by the process corner parameters, conduct tests at the control chip wafer stage, find a set of Trim_Code with the minimum temperature drift, and adjust the Trim_Code parameter value of the current control chip; S104: Complete the adjustment of the Trim_Code parameter value of the current control chip and conduct tests. Automatically test the frequency deviation at each temperature point through a constant temperature environment, determine the frequency deviation value and write it into the NVM on the control chip to complete the determination of the control chip factory configuration parameters; S105: Simulate the parameter adjustment during the operation of the control chip, calculate the corresponding adjustment value according to the current operating temperature through a look-up table or interpolation algorithm, and revise the counter output result to achieve high-precision delay adjustment.

2. The calibration method of an initiation control chip according to claim 1, wherein In S101, receiving the control chip calibration request sent by the terminal includes: Receive a calibration connection request sent by the terminal through a preset network. The calibration connection request is used to request to establish a connection with the control chip calibration device; Detect whether the current account of the terminal is the only target account; If the current account of the user terminal is the only target account, connect to the terminal according to the calibration connection request. After the connection is completed, receive the control chip calibration request sent by the terminal.

3. The calibration method of an initiating control chip as described in claim 2, characterized in that, The preset network includes one or a combination of 3G network, 4G network, 5G network, and WIFI network.

4. The calibration method of an initiation control chip according to claim 3, wherein In S102, obtaining the Trim_Code code, performing circuit simulation on the oscillator on the designed control chip, and obtaining the oscillator temperature drift simulation result includes: Within the full temperature range of -60°C to 100°C of the oscillator, the maximum temperature drift of the oscillator under each Trim_Code condition is 2.24%, the minimum temperature drift is 0.42%, and the temperature coefficient < ±300 ppm / °C, meeting the technical indicators set for the HV control chip by the system and leaving a large design margin; In the first stage, the oscillator design meets the standards. Then, the control chip undergoes Trim_Code calibration and full temperature point calibration improvement. The calibration improvement method is: under the condition of a constant voltage of 1.8V, design a high-precision on-chip oscillator with an uncalibrated full-range temperature drift < ±0.5%, and the temperature coefficient is approximately: ±33 ppm / °C; under a voltage deviation of ±0.25V, the frequency change coefficient at 25°C is: ±0.4% / V, achieving a temperature coefficient of ±40 ppm / °C and a calibration step size of 0.1°C.

5. The calibration method of an initiating control chip according to claim 4, characterized in that, The control chip then undergoes Trim_Code calibration and full temperature point calibration improvement, including: A two - stage LDO isolation design is set up. The first stage is a 3.3V LDO, and the second stage is a 1.8V LDO. And the oscillator operates in the 1.8V voltage domain, and the power supply voltage rejection ratio of the 1.8V LDO; A high - precision temperature compensation algorithm is set up. The PN - junction type temperature - voltage change parameter ΔVbe output by the Bandgap is multiplexed. This signal is conditioned and amplified to output a 0.2 - 2.5V voltage signal in the range of - 60°C - 90°C. A ΔΣADC with an equivalent accuracy of 16 Bits is designed to output a digital temperature signal. A frequency - temperature generation function is designed. According to the measured temperature and ADC readings, a high - density full - temperature calibration algorithm is adopted. Through interpolation and compensation algorithms, a frequency - temperature compensation curve is generated. The compensation value for each batch is determined through multiple experiments and written into the NVM of the control chip.

6. The calibration method of an initiation control chip as described in claim 5, characterized in that, In S103, test to find a set of Trim_Code with the smallest temperature drift, and adjust the Trim_Code parameter value of the current control chip, including: According to the preset rapid initiation instruction, a high - voltage interface communication protocol is designed and adjusted for the reliability and real - time performance required by the rapid initiation instruction; The serial communication baud rate of the high - voltage interface communication protocol is 460KHz. According to the instruction system design, before the host computer issues a rapid initiation instruction, baud rate self - adaptation and pre - configuration commands must be performed. After the command execution is completed, the control chip enters the state of waiting for the rapid instruction; After the instruction is received, the control circuit drives the switching MOS transistor to perform the ignition operation, and the ignition action can be completed within the specified preset time, that is, adjust the Trim_Code parameter value of the current control chip.

7. A method for calibrating an initiation control chip as described in claim 6, characterized in that, In S104, the frequency deviation at each temperature point is automatically tested through a constant - temperature environment. After determining the frequency deviation value, it is written into the NVM on the control chip, including: Set the working voltage of the control chip. The control chip has two - stage LDO circuits built - in, which realizes the conversion of the externally input voltage to the local working voltage, and realizes a low - dropout and low - internal - resistance LDO device; Set the transient peak current of the control chip. Considering the package limitation and the actual over - current capacity of the circuit, a suitable matching resistor is designed according to the set ignition wire and external loop impedance to limit the transient current; Set the working power consumption of the control chip. Since the low - power scenario appears in the energy - storage capacitor power - supply stage, that is, when the high - voltage interface is disconnected and the control chip relies entirely on the external energy - storage capacitor to work, the main power - consumption budget at this time is as follows: Timer working current: all - digital circuit, operating under low - voltage conditions, with a working current of 5uA; LDO working current: low - load state, with a working current of 5uA; Oscillator working current: 10uA; NVM(2Kx8Bit) working current: 1.5mA; Temperature - sensing ADC working current < 2mA; Through the above content, the determination of the factory - configured parameters of the control chip is completed.

8. The calibration method of a detonator control chip according to claim 7, characterized in that In S105, simulate the parameter adjustment during the operation of the control chip. According to the current working temperature, calculate the corresponding adjustment value through a look - up table or interpolation algorithm, and revise the counter output result, including: Set the operating temperature of the control chip, and simulate the control chip entirely within the range of -60°C to 90°C; Design the packaging standard of the control chip. Adopt 1 - 1.2 mil, the packaging size is about 1 mm, the current-carrying capacity of the gold wire > 1.5 A, the fusing current > 2 A @ 5 mS, the current-carrying capacity of the copper wire > 2 A, the fusing current > 3 A @ 5 mS. According to the set indicators and considering sufficient margin, plan to use copper wire / gold wire, parallel bonding > 5 wires to meet the requirements of the project preset indicators, and complete the revision of the calibration value of the control chip.

9. The calibration method of an initiation control chip as claimed in claim 8, wherein The scheme for designing the packaging of the control chip is as follows: Wire the S terminal to the base island, with a total of 8 PADs, and actually wire at least 5 wires; Reserve 12 PADs at the D terminal, and actually wire at least 5 wires; Adopt gold wire bonding, the wire diameter is 25 uM, the fusing current of 1 mm bonding = 2.13 A, the fusing time > 5 mS, and 5 wires can withstand 10 A for > 5 ms; Reserve sufficient PADs to meet the design requirements.

10. An initiating control chip calibration system, characterized in that, Execute the detonation control chip calibration method according to any one of claims 1 - 9, and the system includes: An acquisition module for receiving a control chip calibration request sent by a terminal; A simulation module for obtaining the Trim_Code code, performing circuit simulation on the oscillator on the designed control chip, and obtaining the oscillator temperature drift simulation result; A confirmation module for determining whether the oscillator temperature drift simulation result can offset the deviation introduced by the process corner parameters; An adjustment module for testing at the control chip wafer stage, finding a set of Trim_Code with the smallest temperature drift, and adjusting the Trim_Code parameter value of the current control chip; A configuration module for automatically testing the frequency deviation at each temperature point through a constant temperature environment, determining the frequency deviation value and writing it into the NVM on the control chip to complete the determination of the factory configuration parameters of the control chip; A revision module for calculating the corresponding calibration value through a look-up table or interpolation algorithm, revising the counter output result, and realizing high-precision delay adjustment.

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