Thin film deposition device and thin film deposition method

Abstract

The thin film deposition device proposed in this application includes a heating mechanism, a guide ring, an insulating ring, a lifting mechanism, a rotating mechanism, and a controller. The heating mechanism includes a heating tray for carrying and heating a substrate. The lifting mechanism is used to drive the heating tray and the guide ring upward to perform the first thin film deposition. The rotating mechanism is used to drive the heating tray to rotate the guide ring so that the guide ring is placed on the insulating ring. The lifting mechanism is used to drive the heating tray downward to separate the heating tray and the guide ring. The rotating mechanism is used to drive the heating tray to rotate. The lifting mechanism is used to drive the heating tray upward to perform the second thin film deposition. The relative position of the substrate and the heating tray during the second thin film deposition is different from that during the first thin film deposition. Only one level of lifting mechanism and rotating mechanism is provided, which realizes the rotation of the heating tray and the relative rotation of the substrate and the heating tray, improves the uniformity of thin film deposition, and has a simple structure.

Description

Technical Field

[0001] The present application relates to the field of semiconductor manufacturing equipment, and in particular to a thin film deposition device and a thin film deposition method. Background Art

[0002] Plasma-enhanced chemical vapor deposition (PECVD) equipment deposits various dielectric thin films on substrate surfaces. Film thickness uniformity is a key process parameter, directly impacting film properties and product yield. Improving the uniformity of thin film deposition on substrates is crucial to meet the semiconductor industry's ongoing pursuit of high quality, high efficiency, low cost, and adaptability to large-scale substrates.

[0003] During thin film deposition, the substrate is placed on a heating tray. If the heating tray can rotate along its central axis and the substrate and heating tray can rotate relative to each other, the temperature and plasma effect of thin film deposition can be averaged around the substrate. This can eliminate variations in thin film deposition caused by local conditions within the process chamber. Substrate rotation is an effective method for improving the uniformity of thin film deposition on substrates.

[0004] Existing thin film deposition equipment can achieve a two-stage lifting motion, including a primary lifting mechanism, a secondary lifting mechanism, and a rotating mechanism. The primary lifting mechanism is used to synchronously raise the secondary lifting mechanism and the rotating mechanism to the process position for thin film deposition on the substrate. The secondary lifting mechanism is used to separate the substrate from the heating tray. The rotating mechanism then drives the substrate to rotate by a preset angle before thin film deposition is performed to compensate for uneven thickness of the film deposited on the substrate. However, this structure is complex, costly, and has complex control logic. Summary of the Invention

[0005] The purpose of the present application is to provide a thin film deposition device and a thin film deposition method, which can optimize the uniformity problem caused by the edge deviation of the film thickness.

[0006] To achieve the above objectives and other related objectives, the present application provides a thin film deposition device, comprising:

[0007] A heating mechanism, including a heating tray, for carrying and heating the substrate;

[0008] a guide ring, arranged around the heating tray, the outer edge of the guide ring being provided with a plurality of evenly distributed protrusions, and the inner diameter of the guide ring being smaller than the diameter of the substrate;

[0009] an insulating ring, concentrically arranged above the guide ring, with a plurality of evenly distributed bosses provided on the inner edge of the insulating ring, and a gap formed between two adjacent bosses, the gap being used to allow the protrusion of the guide ring to pass through, and the boss being used to support the protrusion;

[0010] A lifting mechanism, connected to the heating mechanism, for driving the heating tray to move up and down;

[0011] a rotating mechanism connected to the heating mechanism and configured to drive the heating tray to rotate; and

[0012] The controller is configured to: control the lifting mechanism to drive the heating tray and the guide ring to rise synchronously until the protrusion passes through the notch and reaches the process position, and perform the first thin film deposition on the substrate carried on the heating tray; control the rotating mechanism to drive the heating tray and the guide ring to rotate a preset angle so that the protrusion of the guide ring is placed on the boss of the insulating ring; and control the lifting mechanism to drive the heating tray to descend so that the substrate is separated from the heating tray, and control the rotating mechanism to drive the heating tray to rotate the preset angle; control the lifting mechanism to drive the heating tray to rise to the process position again and carry the substrate again, and perform the second thin film deposition on the substrate carried on the heating tray, wherein the relative position of the substrate and the heating tray during the second thin film deposition is different from that during the first thin film deposition.

[0013] Furthermore, the number of the bosses is the same as the number of the protrusions.

[0014] Furthermore, the heating mechanism further includes a rotating shaft, a first end of the rotating shaft is disposed on the heating tray, and a second end of the rotating shaft is connected to the lifting mechanism.

[0015] Furthermore, the lifting mechanism includes a first support plate, a second support plate and a retractable power unit, wherein the power unit is connected between the first support plate and the second support plate, and the power unit is used to make the first support plate and the second support plate move relative to each other in the vertical direction.

[0016] Furthermore, the edge of the heating tray has a circle of sunken parts, and the sunken parts are used to place the guide ring. The height difference between the center of the heating tray and the sunken parts is consistent with the thickness of the guide ring.

[0017] Furthermore, a process chamber is included, and the heating mechanism, the guide ring and the insulating ring are all arranged in the process chamber.

[0018] Furthermore, it also includes a shower head for supplying process gas to the process chamber; the shower head is arranged on the top wall of the process chamber, and the insulating ring is arranged below the shower head.

[0019] Furthermore, the length of the boss is less than or equal to the length of the protrusion.

[0020] Furthermore, the controller is also configured to: before the first thin film deposition, control the rotating mechanism to drive the heating tray and the guide ring to rotate a first preset angle, so that the protrusion of the guide ring is placed on the boss of the insulating ring, and the first preset angle is the initial deviation angle between the protrusion and the boss.

[0021] Furthermore, the controller is also configured to: after completing multiple depositions, control the rotating mechanism to drive the heating tray and the guide ring back to the process position, so that the guide ring and the insulating ring are separated, and then control the lifting mechanism to drive the heating tray and the guide ring to descend through the gap.

[0022] The present application also provides a thin film deposition method, comprising the following steps:

[0023] S11: placing the substrate in the process chamber, driving the heating tray to lift the substrate to the process position, and during the lifting process of the substrate, the protrusion on the outer edge of the guide ring passes through the gap between the bosses on the inner edge of the insulating ring to reach the process position;

[0024] S12: performing the first thin film deposition on the substrate surface;

[0025] S13: The heating tray drives the guide ring and the substrate to rotate by a preset angle, so that the protrusion on the outer edge of the guide ring is placed on the boss on the inner edge of the insulating ring;

[0026] S14: driving the heating tray downward so that the substrate is separated from the heating tray; after the heating tray rotates by a preset angle, driving the heating tray upward to the process position to perform a second thin film deposition; and

[0027] S15: Repeat steps S13 to S14 to perform multiple thin film depositions on the substrate.

[0028] Furthermore, the length of the boss is greater than the length of the protrusion.

[0029] Furthermore, the preset angle is not a multiple or factor of 360° / N, and the number of depositions×preset angle=360°, wherein N is the number of the protrusions.

[0030] Furthermore, the length of the boss is less than or equal to the length of the protrusion.

[0031] Furthermore, before step S12, it also includes: the heating tray drives the guide ring and the substrate to rotate a first preset angle, so that the protrusion on the outer edge of the guide ring is placed on the boss on the inner edge of the insulating ring, and the first preset angle is the deviation angle between the protrusion and the boss at the process position.

[0032] Furthermore, the preset angle is 360° / N, wherein N is the number of the protrusions.

[0033] Furthermore, after step S15, the method further includes: driving the heating tray to drive the guide ring back to the process position, so that the guide ring and the insulating ring are separated, and then driving the heating tray to descend, driving the guide ring and the substrate back to the initial position.

[0034] As described above, the present application provides a thin film deposition apparatus having the following beneficial effects: With only a single-stage lifting mechanism and rotating mechanism, not only can the heating tray rotate along its central axis, but also the substrate and heating tray can rotate relative to each other, thereby achieving an average effect of the temperature and plasma for thin film deposition in the circumferential direction of the substrate. This eliminates variations in thin film deposition caused by differences in local conditions within the process chamber, thereby improving the uniformity of thin film deposition. Furthermore, the thin film deposition apparatus provided by the present application is low-cost, simple in structure, and has simple control logic. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] Figure 1 Shown is a schematic structural diagram of a thin film deposition device according to an embodiment of the present application;

[0036] Figure 2 Shown is another structural schematic diagram of a thin film deposition device according to an embodiment of the present application;

[0037] Figure 3 Shown is a schematic diagram of a thin film deposition device according to an embodiment of the present application;

[0038] Figure 4 and Figure 5 Schematic diagrams showing the guide ring before and after being placed on the insulating ring in the embodiment of the present application are shown respectively;

[0039] Figure 6 and Figure 7 Another schematic diagram showing the embodiment of the present application before and after the guide ring is placed on the insulating ring;

[0040] Figure 8 and Figure 9 Another schematic diagram showing the guide ring before and after being placed on the insulating ring in the embodiment of the present application is shown. DETAILED DESCRIPTION

[0041] The following describes the embodiments of the present application through specific examples. Those skilled in the art will readily understand the other advantages and benefits of the present application from the disclosure herein. The present application may also be implemented or applied through various other specific embodiments, and the details in this specification may be modified or altered based on different viewpoints and applications without departing from the spirit of the present application.

[0042] It should be noted that the illustrations provided in this embodiment are merely schematic illustrations of the basic concept of the present application. Although the illustrations only show components relevant to the present application and are not drawn according to the number, shape, and size of components in actual implementation, the form, quantity, and proportion of each component in actual implementation may be varied arbitrarily, and the component layout may also be more complex. Furthermore, parts with the same reference numerals in multiple figures represent identical or equivalent parts or components.

[0043] like Figures 1 to 3 As shown, this embodiment provides a thin film deposition apparatus, comprising: a process chamber 1, a heating mechanism 2, a guide ring 3, a shower head 4, an insulating ring 5, a lifting mechanism 6, a rotating mechanism 7, and a controller; the heating mechanism 2, guide ring 3, shower head 4, and insulating ring 5 are all disposed within the process chamber 1. The controller is connected to the lifting mechanism 6 and the rotating mechanism 7. The lifting mechanism 6 is used to drive the heating mechanism 2 to rise and fall, and the rotating mechanism 7 is used to drive the heating mechanism 2 to rotate.

[0044] The heating mechanism 2 includes a heating tray 21 and a rotating shaft 22. The heating tray 21 is used to carry and heat the substrate w. The rotating shaft 22 extends downward from the heating tray 21 to form and stably support the heating tray 21. The first end (the upper end in the figure) of the rotating shaft 22 is set on the heating tray 21 to support the heating tray 21, and the second end extends downward through the process chamber 1. The interior of the process chamber 1 includes a counterweight plate 11, an ejector pin 12 and a support column 13. The bottoms of multiple ejector pins 12 (3 are shown in the figure) are set on the counterweight plate 11. The counterweight plate 11 relies on gravity to overlap the support column 13, and the support column 13 is fixed to the bottom of the process chamber 1. Multiple ejector pins 12 are used to support the substrate w. A receiving hole is opened on the heating tray 21. The ejector pin 12 passes through the receiving hole and can move up and down relative to the receiving hole.

[0045] See also Figure 3 The guide ring 3 is positioned around the heating tray 21 and is attached to the heating tray 21 by gravity. When the heating tray 21 and substrate w are separated, the guide ring 3 supports the substrate w. The edge of the heating tray 21 has a circle of sunken portions 211. The height difference between the center and the edge of the sunken portions 211 is consistent with the thickness of the guide ring 3. When the guide ring 3 is placed on the sunken portions 211, the upper surface of the guide ring 3 is flush with the upper surface of the heating tray 21.

[0046] See also Figure 1 and Figure 3 The showerhead 4 is fixed to the top wall of the process chamber 1 and is used to supply process gas into the process chamber 1. An insulating ring 5 is fixed below the showerhead 4 and is concentric with the guide ring 3. The inner edge of the insulating ring 5 has multiple evenly distributed bosses 51. Correspondingly, the outer edge of the guide ring 3 also has the same number of evenly distributed protrusions 31. The protrusions 31 of the guide ring 3 are designed to overlap the bosses 51 of the insulating ring 5. In other embodiments, the number of bosses 51 may be greater than the number of protrusions 31. A gap is formed between adjacent bosses 51 of the insulating ring 5 to accommodate the protrusions 31 on the guide ring 3. The length of the bosses 51 on the insulating ring 5 can be greater than, equal to, or less than the length of the protrusions 31 on the guide ring 3, as long as the protrusions 31 on the guide ring 3 can be placed on the bosses 51 of the insulating ring 5. "Length" here refers to the length of the protrusions 31 (or bosses 51) along the circumference of the guide ring 3 (or insulating ring 5). As the heating tray 21 rises, the guide ring 3 passes through the insulating ring 5, and the protrusion 31 on the guide ring 3 passes through the gap; when the guide ring 3 is located at the process position, the lower surface of the protrusion 31 of the guide ring 3 is slightly higher than the upper surface of the boss 51 of the insulating ring 5. The heating tray 21 is rotated to drive the guide ring 3 to rotate to adjust the relative position of the protrusion 31 and the gap, and the heating tray 21 is driven to descend so that the protrusion 31 of the guide ring 3 can be placed on the boss 51 of the insulating ring 5.

[0047] The number of protrusions 31 is at least two, Figure 4 and Figure 5 In the embodiment shown, there are three protrusions 31 and three bosses 51 , and the lengths of the protrusions 31 and the bosses 51 in the circumferential direction are equal; Figure 6 and Figure 7 In the embodiment shown, there are three protrusions 31 and three bosses 51 . The bosses 51 are relatively long, and the gaps formed between two adjacent bosses 51 are large enough to accommodate the protrusions 31 passing through. Figure 8 and Figure 9 In the illustrated embodiment, there are four protrusions 31 and four bosses 51 .

[0048] The lifting mechanism 6 carries the heating mechanism 2 and guide ring 3, driving the heating mechanism 2, guide ring 3, and substrate w to rise and fall synchronously. During the ascent, the heating tray 21 and guide ring 3 rise with them, reaching the top of the ejector pins 12. The heating tray 21 then raises the counterweight plate 11 and ejector pins 12, separating the counterweight plate 11 from the support column 13. The lightweight ejector pins 12 fully retract within the receiving holes thanks to the weight of the counterweight plate 11. The heating tray 21 and guide ring 3 support the substrate w, ensuring a smooth upper surface where the heating tray 21 contacts the substrate w, allowing the heating tray 21 to heat the substrate w.

[0049] like Figure 1 and Figure 2 As shown, the lifting mechanism 6 includes a first support plate 61, a second support plate 62, and a power unit 63. The power unit 63 is connected between the first support plate 61 and the second support plate 62 to enable relative vertical movement between the first and second support plates 61, 62. The power unit 63 is connected to a controller. In some embodiments, the power unit 63 can be an electric cylinder. For example, when the power unit 63 extends, it drives the second support plate 62 downward, and when the power unit 63 contracts, it drives the second support plate 62 upward. The first support plate 61 is fixedly connected to the bottom of the process chamber 1, and the second support plate 62 is fixedly connected to the rotating shaft 22 of the heating mechanism 2, which passes through the first and second support plates 61, 62. The power unit 63 drives the second support plate 62 up and down, thereby driving the heating mechanism 2 up and down. Preferably, three power units 63 are selected to ensure uniform force on the first and second support plates 61, 62.

[0050] The rotating mechanism 7 is connected to the rotating shaft 22 of the heating mechanism 2 and is used to drive the heating tray 21 and the substrate w to rotate by a preset angle. In some embodiments, the rotating mechanism 7 adopts a structure of a motor and a magnetic fluid.

[0051] See below Figures 1 to 3 Describe the working process of the thin film deposition device.

[0052] The chamber door 14 of the process chamber 1 is opened, and a robot (not shown) carries the substrate w through the chamber door 14 and enters the process chamber 1, placing the substrate w on the ejector pins 12. At this point, the lifting mechanism 6 is not yet activated, and the heating tray 21 and guide ring 3 are both in their initial positions. The guide ring 3 overlaps the sunken portion 211 on the edge of the heating tray 21, and the heating tray 21 and guide ring 3 are at the same height. The ejector pins 12 extend through the receiving holes of the heating tray 21 to receive the substrate w.

[0053] The lifting mechanism 6 operates, driving the heating tray 21 and guide ring 3 to rise together, allowing the guide ring 3 to pass through the insulating ring 5 and rise to the process position. At this process position, the guide ring 3 and the heating tray 21 both carry the substrate w. The heating tray 21 heats the substrate w, and the heating tray 21 transfers some of the heat to the guide ring 3 through heat conduction, also heating the edge of the substrate w carried by the guide ring 3. The plasma gas then deposits a thin film on the substrate w, completing the first thin film deposition on the substrate w.

[0054] The heating tray 21 rotates the substrate w by a preset angle, causing the protrusion 31 on the outer edge of the guide ring 3 to overlap the boss 51 on the inner edge of the insulating ring 5. The lifting mechanism 6 drives the heating tray 21 down to its initial position. Since the guide ring 3 overlaps the insulating ring 5, the heating tray 21 separates from the substrate w, and the guide ring 3 alone supports the substrate w. The rotating mechanism 7 then operates, driving the heating tray 21 to rotate by a preset angle. The lifting mechanism 6 then drives the heating tray 21 up to the process position. The guide ring 3 overlaps the heating tray 21, placing the substrate w on the heating tray 21. At this point, the substrate w forms an angle difference with the heating tray 21, and a second thin film deposition is performed on the substrate w.

[0055] Depending on the deposition situation of the substrate w, the second thin film deposition step can be repeated to perform multiple depositions on the substrate w. In a more preferred embodiment, the number of depositions on the substrate w × the preset angle = 360°. After the substrate w completes multiple depositions, the heating tray 21 drives the substrate w to rotate by the preset angle back to the process position before the first thin film deposition, that is, the position to which the lifting mechanism 6 first drives the heating tray 21 and the guide ring 3 to rise together, so that the protrusion 31 of the guide ring 3 can pass downward through the gap between the bosses 51 of the insulating ring 5. The lifting mechanism 6 drives the heating tray 21 to drive the guide ring 3 and the substrate w to synchronously descend to the initial position.

[0056] In another embodiment, Figure 4 As shown, when the length of the boss 51 is less than or equal to the length of the protrusion 31, before the first thin film deposition, the rotating mechanism 7 drives the heating tray 21 and the guide ring 3 to rotate a first preset angle, so that the protrusion 31 of the guide ring 3 is placed on the boss 51 of the insulating ring 5. The first preset angle is the initial deviation angle between the protrusion 31 and the boss 51. Figure 4 The figure shows the relative positions of the guide ring 3 and the insulating ring 5 when the guide ring 3 rises to the process position. At this time, the deviation angle between the protrusion 31 and the boss 51 is α, which is the initial deviation angle.

[0057] The thin film deposition apparatus also includes a radio frequency generator connected to a controller. The radio frequency generator has an on state and an off state. The controller is used to control the RF generator to periodically turn on and off. When the RF generator is in the on state, it excites the process gas inside the process chamber to dissociate into plasma gas, which then deposits the thin film on the substrate.

[0058] This embodiment also provides a thin film deposition method, comprising the following steps:

[0059] S11: placing the substrate in the process chamber, driving the heating tray to lift the substrate to the process position, and during the lifting process of the substrate, the protrusion on the outer edge of the guide ring passes through the gap between the bosses on the inner edge of the insulating ring to reach the process position;

[0060] S12: performing the first thin film deposition on the substrate surface;

[0061] S13: The heating tray drives the guide ring and the substrate to rotate by a preset angle so that the protrusion on the outer edge of the guide ring is placed on the boss on the inner edge of the insulating ring;

[0062] S14: driving the heating tray to descend so that the substrate is separated from the heating tray; after the heating tray descends to the initial position, it rotates back to a preset angle and drives the heating tray to rise to the process position. At this time, the substrate and the heating tray form an angle difference for the second thin film deposition;

[0063] S15: Repeat steps S13 to S14 to perform multiple thin film depositions on the substrate.

[0064] The above steps S11 to S15 are applicable to the case where the length of the boss 51 of the insulating ring 5 is much greater than the length of the protrusion 31 of the guide ring 3, and the length of the gap between the bosses 51 is slightly greater than the length of the protrusion 31. Figure 6 In the embodiment shown, the number of protrusions 31 of the guide ring 3 is 3, and the gap between the two bosses 51 is just large enough to accommodate the protrusions 31. In step S13, it is necessary to satisfy that the preset angle is not a multiple or factor of 360° / N, where N is the number of protrusions 31 of the guide ring 3, and the number of substrate depositions × preset angle = 360°. Figure 6 In the embodiment shown, the preset angle can be set to 45° or 90°. Therefore, when performing multiple thin film deposition processes, the protrusion 31 of the guide ring 3 can be placed on the boss 51 of the insulating ring 5, and after multiple rotations, the guide ring 3 can return to the process position before the first thin film deposition, and the protrusion 31 passes through the gap between the bosses 51, so that the guide ring 3 is separated from the insulating ring 5. In the actual process, the number of depositions and rotations is determined according to the situation of thin film deposition on the surface of the substrate. After completing multiple depositions in step S15, the heating tray 21 drives the guide ring 3 and the substrate w to rotate again by the preset angle, so that the guide ring 3 returns to the process position in step S11. At this time, the protrusion 31 on the outer edge of the guide ring 3 can pass downward through the gap between the bosses 51 of the insulating ring 5, driving the heating tray 21 to descend, and driving the guide ring 3 and the substrate w back to the initial position.

[0065] This embodiment also provides a thin film deposition method, comprising the following steps:

[0066] S21: placing the substrate in the process chamber, driving the heating tray to lift the substrate to the process position, and during the lifting process of the substrate, the protrusion on the outer edge of the guide ring passes through the gap between the bosses on the inner edge of the insulating ring;

[0067] S22: The heating tray drives the guide ring and the substrate to rotate by a first preset angle so that the protrusion on the outer edge of the guide ring is placed on the boss on the inner edge of the insulating ring;

[0068] S23: performing the first thin film deposition on the substrate surface;

[0069] S24: The heating tray drives the substrate to rotate by a second preset angle so that the protrusion on the outer edge of the guide ring is still placed on the boss on the inner edge of the insulating ring;

[0070] S25: driving the heating tray to descend so that the substrate is separated from the heating tray; after the heating tray descends to the initial position, it rotates back to a second preset angle and drives the heating tray to ascend to the process position. At this time, the substrate and the heating tray form an angle difference for the second thin film deposition;

[0071] S26: Repeat steps S24 to S25 to perform multiple thin film depositions on the substrate.

[0072] The above steps S21 to S26 are applicable to the case where the length of the boss of the insulating ring is equal to or less than the length of the protrusion of the guide ring, such as Figure 4 In step S23, the first preset angle is the deviation angle α between the protrusion 31 and the boss 51. In step S24, the second preset angle is 360° / N, where N is the number of protrusions 31 on the outer edge of the guide ring 3, for example Figure 4 The second preset angle is 120°. In the actual process, the number of depositions and rotations is determined according to the situation of thin film deposition on the substrate surface. After completing multiple depositions in step S26, the heating tray 21 is driven to drive the guide ring 3 and the substrate w to rotate to the initial angle, so that the guide ring 3 returns to the process position in step S21. At this time, the protrusion 31 on the outer edge of the guide ring 3 can pass downward through the gap between the bosses 51 on the inner edge of the insulating ring 5, and then the heating tray 21 is driven to descend, driving the guide ring 3 and the substrate w back to the initial position. For example, after the Nth thin film deposition, the angle of rotation of the guide ring 3 and the substrate w is driven by the heating tray 21 to be the difference between the second preset angle and the first preset angle, so that the protrusion 31 of the guide ring 3 cannot be placed on the boss 51 of the insulating ring 5, and then the heating tray 21 is driven to descend, driving the guide ring 3 and the substrate w back to the initial position.

[0073] The above embodiments are merely illustrative of the principles and effects of this application and are not intended to limit this application. Anyone skilled in the art may modify or alter the above embodiments without departing from the spirit and scope of this application. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concepts disclosed in this application are intended to be covered by this application.

Claims

1. A thin film deposition device, characterized in that: include: A heating mechanism, including a heating tray, for carrying and heating the substrate; a guide ring, arranged around the heating tray, the outer edge of the guide ring being provided with a plurality of evenly distributed protrusions, and the inner diameter of the guide ring being smaller than the diameter of the substrate; an insulating ring, concentrically arranged above the guide ring, with a plurality of evenly distributed bosses provided on the inner edge of the insulating ring, and a gap formed between two adjacent bosses, the gap being used to allow the protrusion of the guide ring to pass through, and the boss being used to support the protrusion; A lifting mechanism, connected to the heating mechanism, for driving the heating tray to move up and down; a rotating mechanism connected to the heating mechanism and configured to drive the heating tray to rotate; as well as The controller is configured to: control the lifting mechanism to drive the heating tray and the guide ring to rise synchronously until the protrusion passes through the notch and reaches the process position, and perform the first thin film deposition on the substrate carried on the heating tray; control the rotating mechanism to drive the heating tray and the guide ring to rotate a preset angle so that the protrusion of the guide ring is placed on the boss of the insulating ring; and control the lifting mechanism to drive the heating tray to descend so that the substrate is separated from the heating tray, and control the rotating mechanism to drive the heating tray to rotate the preset angle; control the lifting mechanism to drive the heating tray to rise to the process position again and carry the substrate again, and perform the second thin film deposition on the substrate carried on the heating tray, wherein the relative position of the substrate and the heating tray during the second thin film deposition is different from that during the first thin film deposition.

2. The thin film deposition device according to claim 1, wherein: The number of the bosses is the same as the number of the protrusions.

3. The thin film deposition device according to claim 1, wherein: The heating mechanism further includes a rotating shaft, a first end of the rotating shaft is disposed on the heating tray, and a second end of the rotating shaft is connected to the lifting mechanism.

4. The thin film deposition device according to claim 1, wherein: The lifting mechanism includes a first support plate, a second support plate and a retractable power unit, wherein the power unit is connected between the first support plate and the second support plate, and is used to make the first support plate and the second support plate move relative to each other in a vertical direction.

5. The thin film deposition device according to claim 1, wherein: The edge of the heating tray has a circle of sunken parts, and the sunken parts are used to place the guide ring. The height difference between the center of the heating tray and the sunken parts is consistent with the thickness of the guide ring.

6. The thin film deposition device according to claim 1, wherein: It also includes a process chamber, in which the heating mechanism, the guide ring and the insulating ring are all arranged.

7. The thin film deposition device according to claim 6, wherein: It also includes a shower head for supplying process gas to the process chamber; the shower head is arranged on the top wall of the process chamber, and the insulating ring is arranged below the shower head.

8. The thin film deposition device according to claim 1, wherein: The length of the boss is less than or equal to the length of the protrusion.

9. The thin film deposition device according to claim 8, wherein: The controller is also configured to: before the first thin film deposition, control the rotating mechanism to drive the heating tray and the guide ring to rotate a first preset angle so that the protrusion of the guide ring is placed on the boss of the insulating ring, and the first preset angle is the initial deviation angle between the protrusion and the boss.

10. The thin film deposition device according to claim 1, wherein: The controller is also configured to: after completing multiple depositions, control the rotating mechanism to drive the heating tray and the guide ring back to the process position, so that the guide ring and the insulating ring are separated, and then control the lifting mechanism to drive the heating tray and the guide ring to descend through the gap.

11. A thin film deposition method, applied to the thin film deposition apparatus according to any one of claims 1 to 10, characterized in that: The following steps are involved: S11: placing the substrate in the process chamber, driving the heating tray to lift the substrate to the process position, and during the lifting process of the substrate, the protrusion on the outer edge of the guide ring passes through the gap between the bosses on the inner edge of the insulating ring to reach the process position; S12: performing the first thin film deposition on the substrate surface; S13: The heating tray drives the guide ring and the substrate to rotate by a preset angle, so that the protrusion on the outer edge of the guide ring is placed on the boss on the inner edge of the insulating ring; S14: driving the heating tray downward so that the substrate is separated from the heating tray; after the heating tray rotates by a preset angle, driving the heating tray upward to the process position to perform a second thin film deposition; and S15: Repeat steps S13 to S14 to perform multiple thin film depositions on the substrate.

12. The thin film deposition method according to claim 11, wherein: The length of the boss is greater than the length of the protrusion.

13. The thin film deposition method according to claim 12, wherein: The preset angle is not a multiple or factor of 360° / N, and the number of deposition times×preset angle=360°, wherein N is the number of the protrusions.

14. The thin film deposition method according to claim 11, wherein: The length of the boss is less than or equal to the length of the protrusion.

15. The thin film deposition method according to claim 14, wherein: Before step S12, it also includes: the heating tray drives the guide ring and the substrate to rotate a first preset angle, so that the protrusion on the outer edge of the guide ring is placed on the boss on the inner edge of the insulating ring, and the first preset angle is the deviation angle between the protrusion and the boss at the process position.

16. The thin film deposition method according to claim 15, wherein: The preset angle is 360° / N, where N is the number of the protrusions.

17. The thin film deposition method according to claim 11, wherein: After step S15, the process further includes: driving the heating tray to bring the guide ring back to the process position so that the guide ring and the insulating ring are separated, and then driving the heating tray to descend to bring the guide ring and the substrate back to their initial positions.

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