IC (integrated circuit) carrier plate flash etching tank cleaning solution as well as preparation method and use method of IC carrier plate flash etching tank cleaning solution

Abstract

The invention discloses an IC (integrated circuit) carrier plate flash etching tank cleaning solution as well as a preparation method and a use method thereof, and relates to the technical field of IC carrier plate flash etching. The tank cleaning solution consists of the following components in mass concentration: 0.5-3.5% of a scavenging agent, 0.5-2.5% of a complexing agent, 0.5-2.5% of a colloidal dispersant, 0.5-2.5% of a corrosion inhibitor, 0.5-2.5% of a wetting agent and the balance of water, the scavenging agent is an ammonium fluoroborate compound, the complexing agent is a benzyl ether compound, the colloidal dispersant is a piperidine carboxylic acid compound, the corrosion inhibitor is a tin alkyl pyridine compound, and the wetting agent is a fluorine acid ester compound. The IC carrier plate flash etching tank cleaning solution provided by the invention has the characteristics of efficient impurity removal, zero equipment corrosion and environmental friendliness, and is suitable for a cleaning process of IC carrier plate flash etching.

Description

Technical Field

[0001] The present invention relates to the technical field of IC carrier board flash etching, and particularly relates to an IC carrier board flash etching cleaning solution, a preparation method thereof, and a usage method thereof. Background Art

[0002] With the rapid development of the semiconductor industry, integrated circuits (ICs) are continuously evolving towards higher integration and smaller sizes, which poses unprecedentedly stringent requirements on the manufacturing process of IC carrier boards. As a key interconnection component between chips and printed circuit boards (PCBs), the line accuracy and reliability of IC carrier boards directly affect the chip performance and the overall quality of electronic products. The flash etching process is indispensable in the manufacturing of IC carrier boards. It can precisely process line details and achieve extremely fine line widths and line spacings, which is of great significance for improving the electrical performance and signal transmission stability of IC carrier boards.

[0003] However, during the continuous operation of the flash etching process of IC carrier boards, a large amount of impurities will gradually accumulate in the flash etching tank. The current industry generally adopts an acidic copper chloride flash etching system, and impurities in the tank solution will continuously accumulate during the processing. Copper / tin suspended particles will cause line sawtooth / notch defects; organic residues such as photoresist stripping residues and decomposition products of additives; silicides such as substrate grinding debris and reaction products of silane coupling agents precipitate in the tank. These impurities will not only interfere with the chemical balance of the flash etching solution, reduce the flash etching rate and uniformity, resulting in problems such as line size deviation and surface roughness, but also may cause serious defects such as short circuits and open circuits, greatly affecting the yield and production efficiency of IC carrier boards. Therefore, developing an efficient, environmentally friendly, low-corrosion and economical cleaning solution for IC carrier board flash etching tanks, as well as its preparation and usage methods, has become the key to solving the current bottleneck in the manufacturing process of IC carrier boards, and has important industrial value and market prospects.

[0004] There are currently many mature technical solutions for stripping solutions. Chinese Patent CN111019430A discloses an acidic developing stripping solution, whose components mainly include phosphoric acid, acetic acid, alkylbenzene sulfonic acid, ethylene glycol, polytrifluoropropylmethylsiloxane, EDTA, OP-10, etc. It has good protection effects on rollers and tank walls, is easy to operate, and has high removal efficiency. Chinese Patent CN110042018A discloses a basic developing stripping solution, whose components mainly include inorganic base, ethanolamine, sodium phosphate salt or similar substances. This stripping solution has low production cost, good cleaning effect and low chemical smell. Chinese Patent CN114437876A discloses a circuit board dry film developing stripping solution, which includes polyacrylamide / methylene polyacrylamide, nitrilotriacetic acid / diethylenetriaminepentaacetic acid, 3-propanolamine / N,N-dimethylethanolamine, polyoxypropylene glycerol ether / polyoxypropylene polyoxyethylene glycerol ether. Through the coordinated action of each component, it has effects such as safety, environmental protection, high efficiency, and good operating environment, and can effectively solve problems such as residues in stripping and long stripping time.

[0005] However, the existing stripping solutions on the market currently show obvious limitations when dealing with the complex impurity components in the IC carrier plate flash etching tank. Some stripping solutions have insufficient ability to dissolve and strip stubborn impurities and are difficult to thoroughly clean the tank; some stripping solutions have strong corrosiveness, are easy to damage the special materials and precision structures of the flash etching tank, and affect the service life of the equipment; in addition, some stripping solutions are not satisfactory in terms of environmental protection and cost control and cannot meet the urgent needs of green production and cost reduction and efficiency increase in the semiconductor industry. Therefore, developing a special stripping solution and intelligent maintenance method with high-efficiency impurity removal, zero equipment corrosion, environmental friendliness, and outstanding economy has become a key technical direction that urgently needs to be broken through to overcome the bottleneck in IC carrier plate manufacturing. Summary of the Invention

[0006] Aiming at the deficiencies of the existing technology, the present invention provides an IC carrier plate flash etching stripping solution, its preparation method and usage method, which are mainly applied to the cleaning process of IC carrier plate flash etching.

[0007] Specifically, it includes the following technical solutions: In the first aspect, an IC carrier plate flash etching stripping solution is provided, which is composed of the following components in mass concentration: scavenger 0.5 - 3.5%, complexing agent 0.5 - 2.5%, colloid dispersant 0.5 - 2.5%, corrosion inhibitor 0.5 - 2.5%, wetting agent 0.5 - 2.5%, and the balance is water; the scavenger is an ammonium fluoroborate compound, the complexing agent is a benzyl ether compound, the colloid dispersant is a piperidine carboxylic acid compound, the corrosion inhibitor is a stannylpyridine compound, and the wetting agent is a fluoric acid ester compound.

[0008] Furthermore, the IC carrier flash etch cleaning solution is composed of the following components in the following mass concentrations: 1.0-2.0% scavenger, 0.5-1.5% complexing agent, 0.5-1.5% colloidal dispersant, 0.5-1.5% corrosion inhibitor, 0.5-1.5% wetting agent, and the balance is water.

[0009] Furthermore, the scavenger is selected from one or more of tetramethylammonium tetrafluoroborate (CAS No.: 661-36-9), tetraethylammonium tetrafluoroborate (CAS No.: 429-06-1), and tetrabutylammonium tetrafluoroborate (CAS No.: 429-42-5).

[0010] Furthermore, the complexing agent is selected from one or more of diveratryl ether (CAS No.: 23702-54-7), 2-naphthyl benzyl ether (CAS No.: 613-62-7), and benzyl propargyl ether (CAS No.: 4039-82-1).

[0011] Furthermore, the colloidal dispersant is selected from one or more of 1-[(tert-butoxy)carbonyl]-4-methylpiperidine-4-carboxylic acid (CAS No.: 189321-63-9), 1-[(tert-butoxy)carbonyl]-2-methylpiperidine-2-carboxylic acid (CAS No.: 746658-74-2), and (S)-1-((benzyloxy)carbonyl)piperidine-3-carboxylic acid (CAS No.: 88466-74-4).

[0012] Furthermore, the corrosion inhibitor is selected from one or more of 2-tri-n-butylstannylpyridine (CAS No.: 17997-47-6), 2-methoxy-4-(tributylstannyl)pyridine (CAS No.: 1204580-72-2), and 2-methyl-6-(tributylstannyl)pyridine (CAS No.: 259807-95-9).

[0013] Furthermore, the wetting agent is selected from one or more of ethyl 3-amino-4,4,4-trifluorocrotonate (CAS No.: 372-29-2), ethyl 4,4,4-trifluorocrotonate (CAS No.: 25597-16-4), and diethyl 2,2,3,3,4,4-hexafluoroglutarate (CAS No.: 424-40-8).

[0014] In the second aspect, a method for preparing the IC carrier flash etch cleaning liquid as described in the first aspect is provided, comprising the following steps: weighing a scavenger, a complexing agent, a colloidal dispersant, a corrosion inhibitor, a wetting agent and the remainder of water in sequence and adding them into a reactor, stirring and mixing at a normal temperature of 25-28°C for 30-35 minutes to obtain the IC carrier flash etch cleaning liquid.

[0015] In a third aspect, there is provided a method for using the IC carrier board flash etching cleaning solution as described in the first aspect, including the following steps: using the IC carrier board flash etching cleaning solution as described in the first aspect to clean the flash etching tank.

[0016] Further, the temperature inside the flash etching tank is 30 ± 1 °C, and the cleaning time is 20 - 25 min.

[0017] The beneficial effects of the present invention are as follows: An IC carrier board flash etching cleaning solution, its preparation method and usage method, the cleaning solution contains a scavenger, a complexing agent, a colloidal dispersant, an inhibitor and a wetting agent as active ingredients. Among them, the scavenger can adsorb harmful ions and organic pollutants in the solution, and at the same time dissolve Si / SiO2 precipitates. The complexing agent can selectively chelate Cu 2+ / Sn 2+ to inhibit the formation of colloids. The colloidal dispersant can break up submicron particle clusters in the solution and maintain dispersion stability through electrostatic repulsion or steric hindrance. The inhibitor forms an adsorption film or a passivation film on the metal surface to protect titanium alloy / PTFE equipment. The wetting agent can reduce the surface tension, enhance the spreading and penetration of the tank solution, and accelerate the cleaning speed of the tank.

[0018] The IC carrier board flash etching cleaning solution of the present invention has the characteristics of high-efficiency impurity removal, zero equipment corrosion, and environmental friendliness. After cleaning, the colloidal copper removal rate in the flash etching tank is ≥ 99.5%, the organic residue decomposition rate is ≥ 98.2%, and the silicate turbidity is ≤ 0.45 NTU, meeting the usage requirements of the IC carrier board cleaning solution, and can be applied to the cleaning process of IC carrier board flash etching. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the following drawings are some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings.

[0020] Figure 1 It is a diagram of the filter of the flash etching tank after cleaning with the IC carrier board flash etching cleaning solution of Example 1 of the present invention; Figure 2 It is a diagram of the filter of the flash etching tank after cleaning with the IC carrier board flash etching cleaning solution of Example 2 of the present invention; Figure 3 It is a diagram of the filter of the flash etching tank after cleaning with the IC carrier board flash etching cleaning solution of Comparative Example 1 of the present invention; Figure 4 It is a diagram of the filter of the flash etching tank after cleaning with the IC carrier board flash etching cleaning solution of Comparative Example 4 of the present invention; Figure 5Filter diagram of the flash etching tank after cleaning with the cleaning solution of Comparative Example 11 of the present invention; Figure 6 Optical microscope diagram of IC carrier board flash etching after cleaning with the IC carrier board flash etching cleaning solution of Example 1 of the present invention; Figure 7 Optical microscope diagram of IC carrier board flash etching after cleaning with the cleaning solution of Comparative Example 11 of the present invention. Detailed implementation manners

[0021] The technical solutions in the embodiments of the present invention will be clearly and completely described below. Obviously, the described embodiments are part of the embodiments of the present invention, rather than all the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.

[0022] It should be understood that when used in this specification and the appended claims, the terms "comprises" and "comprising" indicate the presence of the described features, wholes, steps, operations, elements and / or components, but do not preclude the presence or addition of one or more other features, wholes, steps, operations, elements, components and / or their combinations.

[0023] It should also be understood that the terms used in this specification of the present invention are only for the purpose of describing specific embodiments and are not intended to limit the present invention. As used in this specification of the present invention and the appended claims, unless the context clearly indicates otherwise, the singular forms "a", "an" and "the" are intended to include the plural forms.

[0024] It should be further understood that the term " / and / " used in this specification of the present invention and the appended claims refers to any combination and all possible combinations of one or more of the associated listed items, and includes these combinations.

[0025] In order to more fully understand the technical content of the present invention, the technical solutions of the present invention will be further introduced and described below in conjunction with specific embodiments.

[0026] Example 1 An IC carrier board flash etching cleaning solution is composed of the following components in mass concentration: Remover 1.5%, specifically ammonium tetramethyltetrafluoroborate; Complexing agent 1.0%, specifically bisveratrylether; Colloidal dispersant 1.0%, specifically 1-[(tert-butoxy)carbonyl]-4-methylpiperidine-4-carboxylic acid; Hydrogen peroxide stabilizer 1.0%, specifically 2-tri-n-butylstannylpyridine; Wetting agent: 1.0%, specifically ethyl 3 - amino - 4,4,4 - trifluorocrotonate; The balance is water.

[0027] The preparation method of the flash etching cleaning solution for IC carriers includes the following steps: Weigh the scavenger, complexing agent, colloidal dispersant, corrosion inhibitor, wetting agent and the balance of water in sequence and add them into a reaction kettle, and stir and mix at room temperature of 25°C for 30 min to obtain the flash etching cleaning solution for IC carriers.

[0028] Example 2 A flash etching cleaning solution for IC carriers is composed of the following components by mass concentration: Scavenger: 1.5%, specifically ammonium tetraethyltetrafluoroborate; Complexing agent: 1.0%, specifically 2 - naphthyl benzyl ether; Colloidal dispersant: 1.0%, specifically 1 - [(tert - butoxy)carbonyl] - 2 - methylpiperidine - 2 - carboxylic acid; Hydrogen peroxide stabilizer: 1.0%, specifically 2 - methoxy - 4 - (tributylstannyl)pyridine; Wetting agent: 1.0%, specifically ethyl 4,4,4 - trifluorocrotonate; The balance is water.

[0029] Example 3 A flash etching cleaning solution for IC carriers is composed of the following components by mass concentration: Scavenger: 1.5%, specifically ammonium tetrabutyltetrafluoroborate; Complexing agent: 1.0%, specifically benzyl propynyl ether; Colloidal dispersant: 1.0%, specifically (S) - 1 - ((benzyloxy)carbonyl)piperidine - 3 - carboxylic acid; Hydrogen peroxide stabilizer: 1.0%, specifically 2 - methyl - 6 - (tributylstannyl)pyridine; Wetting agent: 1.0%, specifically diethyl 2,2,3,3,4,4 - hexafluoroglutarate; The balance is water.

[0030] Example 4 A flash etching cleaning solution for IC carriers is composed of the following components by mass concentration: Scavenger: 1.0%, specifically ammonium tetramethyltetrafluoroborate; Complexing agent: 0.5%, specifically diveratryl ether; Colloidal dispersant: 0.5%, specifically 1 - [(tert - butoxy)carbonyl] - 4 - methylpiperidine - 4 - carboxylic acid; Hydrogen peroxide stabilizer: 0.5%, specifically 2 - tributylmethylstannylpyridine; Wetting agent: 0.5%, specifically ethyl 3-amino-4,4,4-trifluorocrotonate; The balance is water.

[0031] Example 5 An IC carrier board flash etching cleaning solution is composed of components with the following mass concentrations: Scavenger: 2.0%, specifically ammonium tetramethyltetrafluoroborate; Complexing agent: 1.5%, specifically bis-veratryl ether; Colloidal dispersant: 1.5%, specifically 1-[(tert-butoxy)carbonyl]-4-methylpiperidine-4-carboxylic acid; Hydrogen peroxide stabilizer: 1.5%, specifically 2-tri-n-butylstannylpyridine; Wetting agent: 1.5%, specifically ethyl 3-amino-4,4,4-trifluorocrotonate; The balance is water.

[0032] Comparative Example 1 Comparative Example 1 provides an IC carrier board flash etching cleaning solution. Compared with Example 1, the only difference is that the component does not contain a scavenger.

[0033] Comparative Example 2 Comparative Example 2 provides an IC carrier board flash etching cleaning solution. Compared with Example 1, the only difference is that the component does not contain a complexing agent.

[0034] Comparative Example 3 Comparative Example 3 provides an IC carrier board flash etching cleaning solution. Compared with Example 1, the only difference is that the component does not contain a colloidal dispersant.

[0035] Comparative Example 4 Comparative Example 4 provides an IC carrier board flash etching cleaning solution. Compared with Example 1, the only difference is that the component does not contain an inhibitor.

[0036] Comparative Example 5 Comparative Example 5 provides an IC carrier board flash etching cleaning solution. Compared with Example 1, the only difference is that the component does not contain a wetting agent.

[0037] Comparative Example 6 Comparative Example 6 provides an IC carrier board flash etching cleaning solution. Compared with Example 1, the only difference is that the mass concentration of the scavenger in the component is 4.0%.

[0038] Comparative Example 7 Comparative Example 7 provides an IC carrier board flash etching cleaning solution. Compared with Example 1, the only difference is that the mass concentration of the complexing agent in the component is 3.0%.

[0039] Comparative Example 8 Comparative Example 8 provides an IC carrier board flash etching cleaning solution. Compared with Example 1, the difference is only that the mass concentration of the colloid dispersant in the components is 3.0%.

[0040] Comparative Example 9 Comparative Example 9 provides an IC carrier board flash etching cleaning solution. Compared with Example 1, the difference is only that the mass concentration of the corrosion inhibitor in the components is 3.0%.

[0041] Comparative Example 10 Comparative Example 10 provides an IC carrier board flash etching cleaning solution. Compared with Example 1, the difference is only that the mass concentration of the wetting agent in the components is 3.0%.

[0042] Comparative Example 11 Comparative Example 11 provides a cleaning solution. Compared with Example 1, the difference is that the cleaning solution of the prior art (Chinese Patent CN114437876A) is used for comparison with the cleaning solution of the present invention. Specifically, it is composed of the following components by weight percentage: 5% of 3-propanolamine, 2.5% of polyacrylamide, 8% of nitrilotriacetic acid, 5% of polyoxypropylene glycerol ether, and the balance of tap water.

[0043] The preparation methods of the cleaning solutions of Examples 2 - 5 and Comparative Examples 1 - 11 are the same as those of Example 1.

[0044] Performance Detection Test The present invention discloses a method for using an IC carrier board flash etching cleaning solution, which includes the following steps: S1 alkaline cleaning; S2 water washing; S3 acid cleaning; S4 water washing; S5 cleaning with the cleaning solution; S6 water washing; S7 secondary water washing.

[0045] Among them, the S1 alkaline cleaning is to clean the flash etching tank that needs to be cleaned after production with an inorganic base to remove impurities such as hard scale or ink chips. The parameters of the alkaline cleaning are: the solution in the tank is 5% NaOH by mass concentration, and the balance is tap water; the working mode is to start the equipment for circulating cleaning, and drain the solution in the tank after the cleaning time ends; the temperature in the tank is 30 ± 1°C, and the cleaning time is 20 min.

[0046] The S2 water washing is to wash the flash etching tank after the S1 alkaline cleaning step with tap water to remove the alkali in the tank. The parameters of the water washing are: the solution in the tank is tap water; the working mode is to start the equipment for circulating cleaning, and drain the solution in the tank after the cleaning time ends; the temperature in the tank is 30 ± 1°C, and the cleaning time is 10 min.

[0047] The S3 pickling is to clean the flash etching tank with acid after the S2 water washing step to clean the dirt deposited at the bottom of the tank. The parameters of pickling are: the solution in the tank is hydrochloric acid with a mass concentration of 5%, and the balance is tap water; the working mode is to turn on the equipment for circulating cleaning, and drain the solution in the tank after the cleaning time ends; the temperature in the tank is 30±1°C, and the cleaning time is 20 minutes.

[0048] The S4 water washing is to wash the flash etching tank after the S3 pickling step with tap water to remove the acid in the tank. The parameters of water washing are: the solution in the tank is tap water; the working mode is to turn on the equipment for circulating cleaning, and drain the solution in the tank after the cleaning time ends; the temperature in the tank is 30±1°C, and the cleaning time is 10 minutes.

[0049] The S5 cleaning with the cleaning solution is to clean the flash etching tank after the S4 water washing step with the flash etching cleaning solution of the embodiment / control example of the present invention or the cleaning solution of the prior art. The parameters of cleaning with the cleaning solution are: the solution in the tank is the cleaning solution of the embodiment or control example of the present invention with a mass concentration of 50% (or the cleaning solution of the prior art), and the balance is tap water; the working mode is to turn on the equipment for circulating cleaning, and drain the solution in the tank after the cleaning time ends; the temperature in the tank is 30±1°C, and the cleaning time is 20 minutes.

[0050] The S6 water washing is to wash the flash etching tank after the S5 cleaning with the cleaning solution step with tap water. The parameters of water washing are: the solution in the tank is tap water; the working mode is to turn on the equipment for circulating cleaning, and drain the solution in the tank after the cleaning time ends; the temperature in the tank is 30±1°C, and the cleaning time is 10 minutes.

[0051] The S7 secondary water washing is to wash the flash etching tank after the S6 water washing step with deionized water. The parameters of water washing are: the solution in the tank is deionized water, the working mode is to turn on the equipment for circulating cleaning, and drain the solution in the tank after the cleaning time ends; the temperature in the tank is 30±1°C, and the cleaning time is 10 minutes.

[0052] The performance of the cleaning solution of the present invention is mainly reflected in three aspects: The first is to detect the colloidal copper removal rate in the flash etching tank after cleaning. The test method is: collect the solution sample in the flash etching tank before cleaning, denoted as A; after cleaning, add deionized water to the flash etching tank to the liquid level line, turn on the circulation in the tank for 10 minutes, and then collect the solution sample, denoted as B. Use an inductively coupled plasma mass spectrometer (ICP-MS) of model SUPEC 7000 to detect the copper concentrations of samples A and B, denoted as C A and C B , and calculate the colloidal copper removal rate. The colloidal copper removal rate (%) = [(C A - C B ) / C A]×100%. Colloidal copper clearance rate is required to be ≥99.2%.

[0053] The second is to detect the decomposition rate of organic residues in the flash etching tank after cleaning. The test method is: collect a sample of the solution in the flash etching tank before cleaning, recorded as A; after cleaning, add deionized water to the flash etching tank to the liquid level line, start the circulation in the tank for 10 minutes, and collect a sample of the solution, recorded as B. Use UN-600 UV-visible near-infrared spectrophotometer to detect the absorbance of samples A and B at UV254, recorded as X and B respectively. A and X B , calculate the decomposition rate of organic residues. Decomposition rate of organic residues (%) = [(X A -X B ) / X A ]×100%. The organic residue decomposition rate is required to be ≥90.0%.

[0054] The third test involves measuring the silicide turbidity in the flash tank after cleaning. The test method is as follows: After cleaning, add deionized water to the flash tank to the liquid level. After circulating the water for 10 minutes, collect a sample of the solution and measure the turbidity using a Hach 2100AN portable turbidity meter. The silicide turbidity must be ≤ 2.00 NTU.

[0055] The performance test of the IC substrate flash etching cleaning solution of Examples 1 to 5 was carried out, and the test results are shown in Table 1 below: Table 1 Performance test results of IC substrate flash etching cleaning solutions of Examples 1 to 5

[0056] Figure 1 This is a diagram of the filter of the flash etch tank after cleaning with the IC substrate flash etch cleaning solution of Example 1 of the present invention; Figure 2 This is a filter diagram of the flash etch tank after cleaning with the IC carrier flash etch cleaning solution of Example 2 of the present invention. Figure 1 - Figure 2 As shown in the test results in Table 1, the tank cleaning solution of the present invention only takes 20 minutes to complete the cleaning step, compared to conventional commercial products (which typically require a cleaning cycle of 1-2 hours), significantly reducing labor and time costs. Specific performance indicators show that after cleaning the IC substrate flash etch tank, the colloidal copper removal rate reaches over 99.5%, the organic residue decomposition rate exceeds 98.2%, and the silicide dispersion turbidity is controlled below 0.45 NTU. This shows that the tank cleaning solution combines efficient impurity removal, zero equipment corrosion, and environmental friendliness. All indicators meet the requirements of IC substrate manufacturing processes and can be directly used in the tank cleaning stage of the flash etch process.

[0057] The IC substrate flash etching cleaning solutions of Comparative Examples 1 to 5 were subjected to performance testing, and the test results are shown in Table 2 below: Table 2 Performance test results of IC substrate flash etching cleaning solutions of Comparative Examples 1 to 5

[0058] Figure 3 This is a filter diagram of the flash etch tank after cleaning with the IC substrate flash etch cleaning solution of Comparative Example 1 of the present invention; Figure 4 This is a filter diagram of the flash etch tank after cleaning with the IC carrier flash etch cleaning solution of Comparative Example 4 of the present invention. Figure 3 - Figure 4 From the test results in Table 2, it can be seen that comparative examples 1-5 are respectively obtained by removing the scavenger, complexing agent, colloidal dispersant, corrosion inhibitor and wetting agent from the formula of the IC carrier flash etching cleaning solution of Example 1 of the present invention. The test data shows that each component plays an irreplaceable role in the cleaning process. The scavenger is the core functional component, which achieves deep purification by adsorbing harmful ions, decomposing organic pollutants, and dissolving silicon-based precipitates. Once missing, the colloidal copper removal rate and the organic residue decomposition rate drop significantly, the silicide turbidity exceeds the standard, and the cleaning effect is greatly reduced. The complexing agent has a great effect on Cu 2+ 、Sn 2+ The selective chelating ability of the colloidal dispersant effectively inhibits colloid formation and accelerates the removal of metal ions and particulate matter. Its absence will directly weaken the tank cleaning efficiency. Colloidal dispersants destroy submicron particle agglomerates and maintain dispersion stability through electrostatic repulsion or steric hindrance effects, making them indispensable for improving tank cleaning performance. Corrosion inhibitors build an adsorption or passivation protective film on the surface of the equipment to protect titanium alloys and PTFE materials from corrosion. Although performance fluctuations are small when missing alone, they work synergistically with other components to optimize the tank cleaning effect. Wetting agents enhance the penetration of the tank liquid by reducing surface tension, accelerating the cleaning rate and helping to improve overall cleaning efficiency. Experimental results show that the absence of any functional component will lead to varying degrees of deterioration in the performance of the tank cleaning liquid, fully confirming that the excellent performance of this tank cleaning liquid is due to the synergistic mechanism of its various components.

[0059] The IC substrate flash etching cleaning solutions of Comparative Examples 6 to 10 and the cleaning solution of Comparative Example 11 were subjected to performance testing. The test results are shown in Table 3 below: Table 3 Performance test results of the IC substrate flash etching cleaning solutions of Comparative Examples 6 to 10 and the cleaning solution of Comparative Example 11

[0060] It can be seen from the test results in Table 3 that Comparative Examples 6-10 are control experiments with a concentration gradient formed with Examples 1-5 by increasing the concentrations of the scavenger, complexing agent, colloidal dispersant, corrosion inhibitor and wetting agent in the flash etching cleaning solution of the IC carrier board of the present invention to exceed the upper limit of the concentration in Example 1 respectively. The data shows that when the concentrations of each functional component exceed the threshold limit defined in the examples, the flash etching tank after cleaning does not show a significant improvement in key indicators such as the colloidal copper removal rate, the decomposition rate of organic residues and the turbidity of silicides compared with the examples with the standard concentration formula. This result confirms that simply increasing the component concentration cannot enhance the cleaning efficiency of the cleaning solution, but will instead lead to a significant increase in raw material costs. Thus, precisely controlling the concentration of each component within the range specified in the examples of the present invention is the key to achieving the balance between the performance and economy of the cleaning solution - it can not only ensure efficient tank cleaning effect, but also avoid waste of resources caused by excessive addition.

[0061] In addition, Figure 5 Figure of the filter of the flash etching tank after cleaning with the cleaning solution of Comparative Example 11 of the present invention, Figure 6 Optical microscope image of the flash etching of the IC carrier board after cleaning with the flash etching cleaning solution of IC carrier board of Example 1 of the present invention, Figure 7 Optical microscope image of the flash etching of the IC carrier board after cleaning with the cleaning solution of Comparative Example 11 of the present invention. The difference between Comparative Example 11 and Example 1 is that the cleaning solution of the prior art is used for comparison. The experimental data shows that the flash etching cleaning solution of the IC carrier board of the example of the present invention has significant advantages in key performance indicators: higher colloidal copper removal rate, more thorough decomposition of organic residues, and lower turbidity of silicides. This fully demonstrates that the cleaning solution has high-efficiency impurity removal ability and environmentally friendly characteristics, and its comprehensive performance is superior to the traditional technical solutions.

[0062] In summary, the present invention provides a flash etching cleaning solution for IC carrier board, and its preparation method and usage method. This cleaning solution is specially designed for the flash etching cleaning process of IC carrier board, and has multiple advantages such as high-efficiency cleaning, equipment protection and environmental friendliness. The experimental data verifies that it can achieve a colloidal copper removal rate of over 99.5%, an organic residue decomposition rate of over 98.2%, and at the same time strictly control the turbidity of silicides within 0.45 NTU; the equipment is ensured to be free of corrosion during the whole cleaning process, meeting the strict industry standards, and providing a reliable and efficient cleaning solution for the flash etching process of IC carrier board.

[0063] The above is only the specific implementation manner of the present invention, but the protection scope of the present invention is not limited thereto. Any person skilled in the art within the technical scope disclosed by the present invention can easily think of various equivalent modifications or substitutions, and these modifications or substitutions should all be covered within the protection scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.

Claims

1. An IC carrier board flash etching cleaning solution, characterized in that, It is composed of components with the following mass concentrations: scavenger 0.5 - 3.5%, complexing agent 0.5 - 2.5%, colloidal dispersant 0.5 - 2.5%, corrosion inhibitor 0.5 - 2.5%, wetting agent 0.5 - 2.5%, and the balance is water; the scavenger is an ammonium fluoroborate compound, the complexing agent is a benzyl ether compound, the colloidal dispersant is a piperidinecarboxylic acid compound, the corrosion inhibitor is a stannylpyridine compound, and the wetting agent is a fluoroester compound.

2. The flash etching cleaning solution for IC substrates according to claim 1, wherein It is composed of components with the following mass concentrations: scavenger 1.0 - 2.0%, complexing agent 0.5 - 1.5%, colloidal dispersant 0.5 - 1.5%, corrosion inhibitor 0.5 - 1.5%, wetting agent 0.5 - 1.5%, and the balance is water.

3. The flash etching cleaning solution for IC carrier board according to claim 1, wherein The scavenger is selected from one or more of ammonium tetramethyltetrafluoroborate, ammonium tetraethyltetrafluoroborate, and ammonium tetrabutyltetrafluoroborate.

4. The flash etching cleaning solution for IC carrier board according to claim 1, characterized in that, The complexing agent is selected from one or more of diveratryl ether, 2-naphthyl benzyl ether, and benzyl propynyl ether.

5. The flash etching cleaning solution for the IC carrier board according to claim 1, wherein The colloidal dispersant is selected from one or more of 1-[(tert-butoxy)carbonyl]-4-methylpiperidine-4-carboxylic acid, 1-[(tert-butoxy)carbonyl]-2-methylpiperidine-2-carboxylic acid, and (S)-1-((benzyloxy)carbonyl)piperidine-3-carboxylic acid.

6. The flash etching cleaning solution for IC carrier board according to claim 1, characterized in that The corrosion inhibitor is selected from one or more of 2-tri-n-butylstannylpyridine, 2-methoxy-4-(tributylstannyl)pyridine, and 2-methyl-6-(tributylstannyl)pyridine.

7. The flash etching cleaning solution for IC substrates according to claim 1, wherein The wetting agent is selected from one or more of ethyl 3-amino-4,4,4-trifluorocrotonate, ethyl 4,4,4-trifluorocrotonate, and diethyl 2,2,3,3,4,4-hexafluoroglutarate.

8. The preparation method of the flash etching and cleaning solution for the IC carrier board according to any one of claims 1-7, characterized in that, It includes the following steps: sequentially weigh the scavenger, complexing agent, colloidal dispersant, corrosion inhibitor, wetting agent, and the balance of water and add them into a reaction kettle, and stir and mix at room temperature of 25 - 28°C for 30 - 35 min to obtain the IC carrier board flash etching cleaning solution.

9. The method for using the flash etching cleaning solution for IC substrates according to any one of claims 1-7, characterized in that, It includes the following steps: use the IC carrier board flash etching cleaning solution described in any one of claims 1 - 7 to clean the flash etching tank.

10. The method for using the flash etching cleaning solution for IC substrates according to claim 9, wherein, The temperature inside the flash etching tank is 30 ± 1°C, and the cleaning time is 20 - 25 min.

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