A peak power regulation method based on an ultra-short ultra-strong laser and a related device

CN120414242BActive Publication Date: 2026-08-11XI AN JIAOTONG UNIV
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Patent Information

Application Number
CN202510558140.9
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2025-04-29
Publication Date
2026-08-11
Estimated Expiration
2045-04-29

AI Technical Summary

Technical Problem

[0004]本发明的目的在于提供一种基于超短超强激光的峰值功率调控方法及相关装置,解决现有技术中气体靶辐射频率的调控机制不明确的问题

Benefits of technology

本发明提供一种基于超短超强激光的峰值功率调控方法,通过构建电子能谱分离系统,获取电子能谱空间分布,为后续调控提供微观物理基础。实时控制气体密度梯度,根据电子能谱空间分布,采用不同的参数调节气体电子密度,建立背压-电子密度-微波强度的定量映射模型,解决传统固定气体靶难以适应激光参数波动的问题。整不同的靶型结构,得到靶型结构对电子回流路径的调控规律。综合气体种类、背压梯度与靶型结构的协同效应,得到微波参数调控策略,对峰值功率进行调控,破性地通过靶型结构优化、背压调节及磁场偏转技术,实现微波频率、强度和辐射角度的多维度精准调控。本发明通过采用近临界密度气体靶(氮气/氦气)与飞秒激光相互作用技术,实现了微波峰值功率达731 MW,并通过离化注入机制使氮气靶微波功率较氦气靶提升63%。设计超短脉冲激光与近临界密度气体靶相互作用实验,通过调控气体种类、压强梯度等关键参数,结合微波时频诊断与电子能谱同步测量,发现微波辐射强度与逃逸电子数量呈正向相关,而辐射频谱主峰呈现参数不敏感性。揭示了微波辐射源于电子回流动力学而非传统偶极辐射机制,通过特征频率公式验证了靶室壁耦合新机制。气体靶技术结合kHz级高重复频率喷气系统与抗干扰屏蔽设计,解决了固体靶低重复频率(<1 Hz)和靶材污染问题,可稳定产生百兆瓦级定向微波(电场强度6.44×105V/m),在定向能武器、抗截获通信和等离子体精密加工领域展现出颠覆性应用潜力,填补了传统技术在高功率与频谱灵活性上的技术空白,为发展新型可控微波辐射源奠定了基础。

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Abstract

This invention discloses a peak power control method and related apparatus based on ultrashort, ultra-intense lasers. The method includes: constructing an electron spectrum separation system to obtain the spatial distribution of the electron spectrum; controlling the gas density gradient in real time; adjusting the gas electron density using different parameters according to the spatial distribution of the electron spectrum; establishing a quantitative mapping model of back pressure-electron density-microwave intensity; adjusting different target structures to obtain the control law of the target structure on the electron return path; and obtaining a microwave parameter control strategy by comprehensively considering the synergistic effect of gas type, back pressure gradient, and target structure to control the peak power. This invention, by controlling key parameters such as gas type and pressure gradient, combined with microwave time-frequency diagnostics and synchronous measurement of the electron spectrum, reveals the electron return dynamics of microwave radiation sources, filling the technological gap in high power and spectral flexibility of traditional technologies, and laying the foundation for the development of novel controllable microwave radiation sources.
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Description

Technical Field

[0001] This invention belongs to the field of laser technology and relates to a peak power control method and related device based on ultrashort and ultra-intense lasers. Background Technology

[0002] In the field of laser technology, breakthroughs in ultrashort and ultra-intense laser technology have spurred research into novel high-power microwave radiation sources. Among these, chirped pulse amplification (CPA) technology effectively solves the energy enhancement bottleneck caused by gain saturation and optical damage in traditional laser amplification, enabling femtosecond lasers to achieve an exponential leap in power density. Femtosecond lasers based on chirped pulse amplification technology (with power densities reaching 10^6 kilometres per second) are a prime example. 22 W / cm 2 When microwaves (on the order of magnitude of lasers) interact with matter, they can excite broadband electromagnetic radiation (0.3~300 GHz), with power reaching the GW level in the 4π direction. They also possess the advantage of adjustable laser parameters, making them strategically valuable in directed energy weapons and anti-jamming communications. However, such microwaves have a dual effect on electronic devices: low power leads to signal noise interference, which mixes into the signals received by electronic devices, causing signal quality degradation, increased bit error rate, and consequently affecting device performance and reliability. High power causes component breakdown and damage; the strong electromagnetic field of high-power microwaves generates huge induced currents and voltages inside electronic components, exceeding the components' tolerance limits, causing the internal insulation materials to break down and semiconductor devices to burn out, thus paralyzing and rendering the entire electronic device unusable. This damage is often irreversible, difficult and costly to repair, and may even lead to permanent equipment failure. This dual effect of interference and destruction on electronic devices makes microwave attack and defense technology a closely linked and mutually reinforcing research field, simultaneously promoting the coordinated development of microwave attack and defense technologies.

[0003] Early research focused on the interaction between lasers and solid targets, revealing the dipole radiation mechanism generated by the return current on the target surface and the regulation of radiation frequency by the target rod size. Although nanosecond to femtosecond pulsed lasers can induce strong electromagnetic pulses, solid targets face bottlenecks such as low repetition frequency (<1 Hz) and severe ablation contamination of the target material. Recent studies have shown that near-critical density gas targets can achieve density gradient adjustment (10 Hz) through precise nozzle control. 18 ~10 21 cm -3The repetition frequency reaches the kHz level, avoiding debris contamination. Experiments have confirmed that the electromagnetic interference intensity of the gas target is two orders of magnitude higher than that of the solid target. Pulse width modulation can further enhance radio frequency radiation, but its microwave generation mechanism may involve physical processes such as electron backflow radiation and target chamber wall collision radiation. Some electrons are accelerated by the laser and gain high energy. When these high-energy electrons move in the plasma, they form a backflow current, which in turn generates microwave radiation. When electrons, ions, and other particles in the plasma collide with the target chamber wall, they excite electromagnetic radiation, which may contain microwave frequency signals. In addition, other unknown physical processes may also be involved in the generation and evolution of microwaves. Summary of the Invention

[0004] The purpose of this invention is to provide a peak power control method and related device based on ultrashort and ultra-intense lasers, which solves the problem of unclear control mechanism of gas target radiation frequency in the prior art.

[0005] To achieve the above objectives, the present invention employs the following technical solution: A peak power modulation method based on ultrashort, ultra-intense lasers includes: Construct an electron energy spectrum separation system to obtain the spatial distribution of the electron energy spectrum; By controlling the gas density gradient in real time and adjusting the gas electron density according to the spatial distribution of the electron energy spectrum, a quantitative mapping model of back pressure-electron density-microwave intensity is established. Different target structures are then adjusted to obtain the regulation law of the target structure on the electron backflow path. By combining the synergistic effects of gas type, back pressure gradient, and target structure, a microwave parameter control strategy is obtained to regulate peak power.

[0006] Furthermore, the electron spectroscopy separation system is set with a wavelength of 800 nm, an energy of 18 J, a pulse width of 25 fs, and a focal spot diameter of 8 μm.

[0007] Furthermore, the electrons include low-energy electrons and high-energy electrons, with the low-energy electrons having an energy of 8~38MeV and the high-energy electrons having an energy of 39~200MeV.

[0008] Furthermore, the types of gases include nitrogen and helium.

[0009] Furthermore, the quantitative mapping model of back pressure-electron density-microwave intensity is as follows: when the back pressure increases, the electron density increases, the number of forward-escaping electrons increases, and the microwave radiation intensity is enhanced.

[0010] Furthermore, the target structure regulates the electron reflux path as follows: the target structure modulates the radiation frequency by changing the characteristic length of the electron reflux path.

[0011] Furthermore, the radiation frequency is:

[0012] in, Indicates the radiation frequency. Indicates the characteristic length of the electron reflux path. This represents the speed of light in a vacuum. This represents the characteristic diameter of the target structure.

[0013] A peak power modulation system based on ultrashort, ultra-intense laser, comprising: The acquisition module is used to construct an electron energy spectrum separation system and acquire the spatial distribution of the electron energy spectrum; The modeling module is used to monitor the gas density gradient in real time, adjust the gas electron density with different parameters according to the spatial distribution of the electron energy spectrum, establish a quantitative mapping model of back pressure-electron density-microwave intensity, adjust different target structures, and obtain the regulation law of the target structure on the electron backflow path. The control module is used to integrate the synergistic effects of gas type, back pressure gradient and target structure to obtain microwave parameter control strategy and control peak power.

[0014] A terminal device includes a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor executes the computer program to implement the steps of the method.

[0015] A computer-readable storage medium storing a computer program that, when executed by a processor, implements the steps of the method.

[0016] Compared with the prior art, the present invention has the following beneficial effects: This invention provides a peak power control method based on ultrashort, ultra-intense lasers. By constructing an electron spectrum separation system, the spatial distribution of the electron spectrum is obtained, providing a microscopic physical basis for subsequent control. The gas density gradient is controlled in real time, and different parameters are used to adjust the gas electron density according to the spatial distribution of the electron spectrum. A quantitative mapping model of back pressure, electron density, and microwave intensity is established, solving the problem that traditional fixed gas targets cannot adapt to laser parameter fluctuations. Different target structures are adjusted to obtain the control law of the target structure on the electron return path. By combining the synergistic effects of gas type, back pressure gradient, and target structure, a microwave parameter control strategy is obtained to regulate the peak power. Breakthroughly, through target structure optimization, back pressure adjustment, and magnetic field deflection technology, multi-dimensional precise control of microwave frequency, intensity, and radiation angle is achieved. This invention achieves a microwave peak power of 731 MW by using a near-critical density gas target (nitrogen / helium) interacting with a femtosecond laser, and through an ionization injection mechanism, the microwave power of the nitrogen target is increased by 63% compared to the helium target. An experiment was designed to investigate the interaction between an ultrashort pulse laser and a near-critical density gas target. By controlling key parameters such as gas type and pressure gradient, and combining microwave time-frequency diagnostics with synchronous electron spectral measurements, it was found that microwave radiation intensity is positively correlated with the number of escaping electrons, while the main peak of the radiation spectrum exhibits parameter insensitivity. This reveals that microwave radiation originates from electron reflux dynamics rather than the traditional dipole radiation mechanism, and the novel target chamber wall coupling mechanism was verified through a characteristic frequency formula. The gas target technology, combined with a kHz-level high repetition rate jet system and anti-interference shielding design, solves the problems of low repetition rate (<1 Hz) and target material contamination in solid targets, and can stably generate megawatt-level directional microwaves (electric field strength 6.44 × 10⁻⁶). 5 The V / m) has shown disruptive application potential in the fields of directed energy weapons, anti-interception communications and plasma precision machining, filling the technological gap of traditional technologies in high power and spectrum flexibility, and laying the foundation for the development of new controllable microwave radiation sources. Attached Figure Description

[0017] To more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of the present invention and should not be regarded as a limitation on the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0018] Figure 1 This is a flowchart of the peak power control method based on ultrashort and ultra-intense lasers according to the present invention.

[0019] Figure 2 This is a schematic diagram of the peak power modulation experiment based on ultrashort and ultra-intense laser in Embodiment 1 of the present invention.

[0020] Figure 3 This is a time-domain distribution diagram of the microwaves generated by the interaction of laser with helium and nitrogen in Embodiment 1 of the present invention.

[0021] Figure 4 This is a microwave frequency domain distribution diagram of the interaction between laser and helium and nitrogen in Embodiment 1 of the present invention.

[0022] Figure 5 This is a time-domain diagram of microwaves under different gas pressures during the interaction of laser and nitrogen in Embodiment 1 of the present invention.

[0023] Figure 6 This is a frequency domain diagram of microwaves under different gas pressures during the interaction of laser and nitrogen in Embodiment 1 of the present invention.

[0024] Figure 7 This is a graph showing the variation of peak power in Embodiment 1 of the present invention with changes in target structure and gas back pressure.

[0025] Figure 8 This is a schematic diagram of a peak power control system based on an ultrashort, ultra-intense laser, according to a preferred embodiment of the present invention.

[0026] Figure 9 This is a schematic diagram of the electronic device structure according to a preferred embodiment of the present invention. Detailed Implementation

[0027] The following description, in conjunction with the accompanying drawings, illustrates exemplary embodiments of this application, including various details to aid understanding. These should be considered merely exemplary. Therefore, those skilled in the art will recognize that various changes and modifications can be made to the embodiments described herein without departing from the scope and spirit of this application. Similarly, for clarity and brevity, descriptions of well-known functions and structures are omitted in the following description.

[0028] Obviously, the described embodiments are only some, not all, of the embodiments in this application. All other embodiments obtained by those skilled in the art based on the embodiments in this application without inventive effort are within the scope of protection of this application.

[0029] It should be noted that the terminals involved in the embodiments of this application may include, but are not limited to, mobile phones, personal digital assistants (PDAs), wireless handheld devices, tablet computers, personal computers (PCs), MP3 players, MP4 players, wearable devices (e.g., smart glasses, smartwatches, smart bracelets), smart home devices, and other smart devices.

[0030] Furthermore, the term "and / or" in this article is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, or B existing alone. Additionally, the character " / " in this article generally indicates that the preceding and following related objects have an "or" relationship.

[0031] The present invention will now be described in further detail with reference to the accompanying drawings: See Figure 1 This invention provides a method for peak power modulation based on ultrashort, ultra-intense lasers, specifically including the following steps: Step 1: Construct an electron energy spectrum separation system to obtain the spatial distribution of the electron energy spectrum.

[0032] The experiment employed a femtosecond laser with a wavelength of 800 nm, energy of 18 J, pulse width of 25 fs, and focal spot diameter of 8 μm, focused on the center of a near-critical density gas target nozzle. The nozzle was a circular aperture structure with a diameter of 400 μm. A monopole antenna was positioned 23 cm from the laser's focal point and placed within a shielded enclosure to absorb low-frequency microwaves and isolate low-energy electron interference. A forward electron spectrometer received electrons through a beryllium window, a polyethylene plate, and a lead shield (collimation aperture of 1 cm), separating low-energy (8–38 MeV) and high-energy (39–200 MeV) electrons. The spatial distribution of the energy spectrum was recorded using an IP imaging plate.

[0033] Step 2: Control the gas density gradient in real time. Based on the spatial distribution of the electron energy spectrum, adjust the gas electron density using different parameters to establish a quantitative mapping model of back pressure-electron density-microwave intensity.

[0034] Electron density gradient control is achieved by adjusting the back pressure and gas type (nitrogen / helium) using the SourceLab and Smartshell control systems. Due to the L-shell electron ionization injection mechanism, nitrogen emits significantly more escape electrons than helium at the same back pressure. As the back pressure increases, the electron density increases, leading to an increase in the number of forward-escaping electrons and directly enhancing the microwave radiation intensity.

[0035] Step 3: Adjust different target structures to obtain the regulation law of the target structure on the electron reflux path.

[0036] Comparing the effects of the Hosoki nozzle and the Source's built-in nozzle on the microwave spectrum shows that the target structure modulates the radiation frequency by changing the characteristic length of the electron return path. The radiation frequency is:

[0037] in, Indicates the radiation frequency. Indicates the characteristic length of the electron reflux path. This represents the speed of light in a vacuum. This represents the characteristic diameter of the target structure.

[0038] Step 4: By considering the synergistic effects of gas type, back pressure gradient, and target structure, a microwave parameter control strategy is derived to regulate the peak power. Adjustable microwave parameters are achieved by controlling the gas type, back pressure, and target structure.

[0039] The present invention will be further described in detail below through specific embodiments: Example 1: In this embodiment, the peak power control method based on ultrashort and ultra-intense lasers specifically includes the following steps: Step 1: Construct an electron energy spectrum separation system to obtain the spatial distribution of the electron energy spectrum: like Figure 2 As shown, a femtosecond laser with a peak power of 1 PW (wavelength 800 nm, pulse width 25 fs, single pulse energy 18 J) is used, focused by an off-axis parabolic mirror onto a strong field region with a focal spot diameter of 8 μm, precisely acting on the core region of a near-critical density gas target. The gas target employs a modular nozzle system, configured with a standard circular nozzle with a diameter of 400 μm and replaceable Hosoki nozzles, forming a controllable electron density gradient (10⁻⁶ PW). 19 ~10 20 cm -3 The experimental system integrates a microwave detection array (monopolar antenna 23 cm from the point of action) and a three-level shielding structure (beryllium window-polyethylene plate-lead collimator), and combines it with a 0.9T permanent magnet to construct an electron energy spectrum separation system, achieving directional separation of low-energy electrons (8~38 MeV) and high-energy escape electrons (39~200 MeV). The spatial distribution of the electron energy spectrum is recorded synchronously through an IP imaging board, ensuring a full-dimensional correlation diagnosis between microwave radiation and electron dynamic parameters.

[0040] Step 2: Real-time control of the gas density gradient. Based on the spatial distribution of the electron energy spectrum, different parameters are used to adjust the gas electron density, establishing a quantitative mapping model of back pressure-electron density-microwave intensity. A Smartshell solenoid valve control system was used to regulate the gas back pressure (2.5~4.5 MPa). A quantitative mapping model of back pressure-microwave intensity was established, revealing that when the back pressure increased from 2.5 MPa to 4.5 MPa, the peak microwave intensity of the nitrogen target increased by 47% in the time domain plot. Figure 3 As shown; in the frequency domain plot, the microwave intensity of the nitrogen target at the 400 MHz characteristic peak increases by 63%, as... Figure 4 As shown.

[0041] Step 3: Adjust different target structures and gas types to obtain the regulation law of electron reflux path by the target structure and the influence of gas type on intensity, such as... Figure 5 and Figure 6 As shown: By comparing the microwave radiation characteristics of a standard nozzle and a Hosoki nozzle under a Smartshell control system, the regulation of the electron return path by the target structure was discovered. The Hosoki nozzle linearly reduced the microwave frequency from 700 MHz to 400 MHz by increasing the characteristic length and radius of curvature of the return chamber.

[0042] When the gas type was changed from nitrogen to helium, the peak power increased by 62%, indicating that the L-layer electron ionization injection mechanism unique to the nitrogen target significantly increased the number of escaped electrons under the same back pressure compared to the helium target, resulting in a clear enhancement in strength.

[0043] Step 4: Taking into account the synergistic effects of gas type, back pressure gradient, and target structure, a microwave parameter control strategy is derived to regulate the peak power, such as... Figure 7 As shown: By considering the synergistic effects of gas type, back pressure gradient, and target structure, a "three-degree-of-freedom" microwave parameter control strategy is proposed: ① In the back pressure parameter control experiment, the intensity of the 400MHz characteristic peak generated by nitrogen working medium under 4.5MPa pressure is increased by 63% compared with the 2.5MPa condition; ② In terms of target configuration optimization, the use of Hosoki nozzles effectively shifts the microwave main frequency from 700MHz to the 400MHz band; ③ The nitrogen target achieves a peak power of 0.44 MW through enhanced ionization injection, which is 63% higher than that of the helium target (0.27 MW). This scheme has a wide frequency range, forming a multi-dimensional controllable output of power, frequency, and azimuth angle, providing an engineerable high-power microwave source solution for directed energy weapons and plasma processing.

[0044] The novel microwave radiation mechanism of laser-gas target interaction in this invention, by controlling gas parameters and pressure gradient and combining synchronous diagnostic technology, reveals that microwave intensity is directly related to the number of escaped electrons and the main peak of the spectrum is stable. Experiments confirm that it originates from the interaction between electron backflow and the target chamber wall, breaking through the limitations of traditional target surface dipole radiation theory and providing key theoretical support for the development of high-power controllable microwave sources.

[0045] Example 2: This invention also provides a peak power control system based on ultrashort, ultra-intense lasers, such as... Figure 8 As shown, the system includes: an acquisition module, a modeling module, and a control module.

[0046] The acquisition module is used to construct an electron energy spectrum separation system and acquire the spatial distribution of the electron energy spectrum; The modeling module is used to monitor the gas density gradient in real time, adjust the gas electron density with different parameters according to the spatial distribution of the electron energy spectrum, establish a quantitative mapping model of back pressure-electron density-microwave intensity, adjust different target structures, and obtain the regulation law of the target structure on the electron backflow path. The control module is used to integrate the synergistic effects of gas type, back pressure gradient and target structure to obtain microwave parameter control strategy and control peak power.

[0047] It is understood that the peak power control system based on ultrashort and ultra-intense lasers provided by the present invention corresponds to the peak power control method based on ultrashort and ultra-intense lasers provided in the foregoing embodiments. The relevant technical features of the peak power control system based on ultrashort and ultra-intense lasers can be referred to the relevant technical features of the peak power control method based on ultrashort and ultra-intense lasers, and will not be repeated here.

[0048] Another object of the present invention is to provide an electronic device, such as... Figure 9 As shown, it includes a memory, a processor, and a computer program stored in the memory and executable on the processor, the processor performing the steps of the peak power modulation method based on ultrashort ultra-intense laser.

[0049] The peak power modulation method based on ultrashort and ultra-intense lasers includes the following steps: Construct an electron energy spectrum separation system to obtain the spatial distribution of the electron energy spectrum; By controlling the gas density gradient in real time and adjusting the gas electron density according to the spatial distribution of the electron energy spectrum, a quantitative mapping model of back pressure-electron density-microwave intensity is established. Different target structures are then adjusted to obtain the regulation law of the target structure on the electron backflow path. By combining the synergistic effects of gas type, back pressure gradient, and target structure, a microwave parameter control strategy is obtained to regulate peak power.

[0050] A fourth objective of this invention is to provide a computer-readable storage medium storing a computer program that, when executed by a processor, implements the steps of the peak power control method based on ultrashort, ultra-intense laser.

[0051] The peak power modulation method based on ultrashort and ultra-intense lasers includes the following steps: Construct an electron energy spectrum separation system to obtain the spatial distribution of the electron energy spectrum; By controlling the gas density gradient in real time and adjusting the gas electron density according to the spatial distribution of the electron energy spectrum, a quantitative mapping model of back pressure-electron density-microwave intensity is established. Different target structures are then adjusted to obtain the regulation law of the target structure on the electron backflow path. By combining the synergistic effects of gas type, back pressure gradient, and target structure, a microwave parameter control strategy is obtained to regulate peak power.

[0052] Those skilled in the art will understand that embodiments of the present invention can be provided as methods, systems, or computer program products. Therefore, the present invention can take the form of a completely hardware embodiment, a completely software embodiment, or an embodiment combining software and hardware aspects. Furthermore, the present invention can take the form of a computer program product embodied on one or more computer-usable storage media (including, but not limited to, disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.

[0053] This invention is described with reference to flowchart illustrations and / or block diagrams of methods, apparatus (systems), and computer program products according to embodiments of the invention. It will be understood that each block of the flowchart illustrations and / or block diagrams, and combinations of blocks in the flowchart illustrations and / or block diagrams, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, special-purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, generate instructions for implementing the flowchart illustrations and / or block diagrams. Figure 1 One or more processes and / or boxes Figure 1 A device that provides the functions specified in one or more boxes.

[0054] These computer program instructions may also be stored in a computer-readable storage medium that can direct a computer or other programmable data processing device to function in a particular manner, such that the instructions stored in the computer-readable storage medium produce an article of manufacture including instruction means, which are implemented in a process Figure 1 One or more processes and / or boxes Figure 1 The function specified in one or more boxes.

[0055] These computer program instructions may also be loaded onto a computer or other programmable data processing equipment to cause a series of operational steps to be performed on the computer or other programmable equipment to produce a computer-implemented process, thereby providing instructions that execute on the computer or other programmable equipment for implementing the process. Figure 1 One or more processes and / or boxes Figure 1 The steps of the function specified in one or more boxes.

[0056] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and not to limit it. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand that modifications or equivalent substitutions can still be made to the specific implementation of the present invention. Any modifications or equivalent substitutions that do not depart from the spirit and scope of the present invention should be covered within the scope of protection of the claims of the present invention.

Claims

1. A method for peak power regulation based on ultra-short ultra-intense laser, characterized in that, include: Construct an electron energy spectrum separation system to obtain the spatial distribution of the electron energy spectrum; By controlling the gas density gradient in real time and adjusting the gas electron density according to the spatial distribution of the electron energy spectrum, a quantitative mapping model of back pressure-electron density-microwave intensity is established. Different target structures are then adjusted to obtain the regulation law of the target structure on the electron backflow path. By combining the synergistic effects of gas type, back pressure gradient, and target structure, a microwave parameter control strategy is obtained to regulate peak power.

2. The peak power control method based on ultrashort, ultra-intense laser according to claim 1, characterized in that, The electron spectral separation system is set with a wavelength of 800 nm, an energy of 18 J, a pulse width of 25 fs, and a focal spot diameter of 8 μm.

3. The peak power control method based on ultrashort, ultra-intense laser according to claim 1, characterized in that, The electrons include low-energy electrons and high-energy electrons, with the low-energy electrons having an energy of 8~38MeV and the high-energy electrons having an energy of 39~200MeV.

4. The peak power control method based on ultrashort, ultra-intense laser according to claim 1, characterized in that, The types of gases include nitrogen and helium.

5. The peak power control method based on ultrashort, ultra-intense laser according to claim 1, characterized in that, The quantitative mapping model of back pressure-electron density-microwave intensity is as follows: when the back pressure increases, the electron density increases, the number of forward-escaping electrons increases, and the microwave radiation intensity is enhanced.

6. The peak power control method based on ultrashort, ultra-intense laser according to claim 1, characterized in that, The target structure regulates the electron reflux path by changing the characteristic length of the electron reflux path, thereby controlling the radiation frequency.

7. The peak power control method based on ultrashort, ultra-intense laser according to claim 6, characterized in that, The radiation frequency is: in, Indicates the radiation frequency. Indicates the characteristic length of the electron reflux path. This represents the speed of light in a vacuum. This represents the characteristic diameter of the target structure.

8. A peak power control system based on ultrashort, ultra-intense laser, characterized in that, include: The acquisition module is used to construct an electron energy spectrum separation system and acquire the spatial distribution of the electron energy spectrum; The modeling module is used to monitor the gas density gradient in real time, adjust the gas electron density with different parameters according to the spatial distribution of the electron energy spectrum, establish a quantitative mapping model of back pressure-electron density-microwave intensity, adjust different target structures, and obtain the regulation law of the target structure on the electron backflow path. The control module is used to integrate the synergistic effects of gas type, back pressure gradient and target structure to obtain microwave parameter control strategy and control peak power.

9. A terminal device, comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, characterized in that, When the processor executes the computer program, it implements the steps of the method according to any one of claims 1 to 7.

10. A computer-readable storage medium storing a computer program, characterized in that, When the computer program is executed by a processor, it implements the steps of the method according to any one of claims 1 to 7.

Citation Information

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