CIS (Contact Image Sensor) chip grinding protection liquid as well as preparation method and application thereof

Abstract

The invention provides a CIS chip grinding protection liquid and a preparation method and application thereof. The CIS chip grinding protection liquid comprises the following components in parts by weight: 15-25 parts of silane modified polyvinyl acetate; 50 to 100 parts of a diluent; 0.5 to 6 parts of an anti-gel auxiliary agent; the anti-gel auxiliary agent is a high-boiling-point alcohol. The silane modified polyvinyl acetate is one or more of 3-amino propyl triethoxy silane modified polyvinyl acetate, 3-chloropropyl triethoxy silane modified polyvinyl acetate, methyl triethoxy silane modified polyvinyl acetate and 3-(diethoxy ethyl) amino propyl triethoxy silane modified polyvinyl acetate. According to the CIS chip grinding protection liquid, a layer of protection film can be formed on the surface of a wafer to ensure that the wafer is not damaged by external force in the grinding process, the yield of the CIS chip is further improved, and the CIS chip grinding protection liquid has good application prospects and industrial popularization value in the field of semiconductor processing.

Description

Technical Field

[0001] The present invention relates to cutting protection liquid technology, in particular to a CIS chip scratch protection liquid and a preparation method and application thereof. Background Art

[0002] A CMOS Image Sensor (CIS) is an optical sensor, the core component of camera modules, converting photons into electrons and image signals into digital signals. The millions or even tens of millions of pixels on a CIS chip are crucial for clear imaging. However, the chip scratching process during packaging is often the most susceptible to pixel damage. Currently, common scribing methods include laser cutting and wheel dicing. Laser cutting is heat-based, and the slag generated near the cutting path during the cutting process can dislodge during product use and fall onto the photosensitive area, damaging pixels and impacting product performance. Although laser cutting protective fluids can be used, the generation of slag is difficult to completely avoid. Debris generated during wheel dicing can directly scratch the pixels in the photosensitive area, significantly reducing cutting yield. Therefore, wheel dicing is often combined with a protective fluid to form a protective film on the wafer surface to minimize pixel damage during the cutting process.

[0003] In order to meet the growing yield rate requirements of CIS chips, the performance of the scratch protection fluid used in CIS packaging is also facing higher standards. It is urgent to develop a protective fluid that can effectively protect the CIS chip from damage during cutting by the blade wheel. Summary of the Invention

[0004] In response to the above problems, the purpose of the present invention is to propose a CIS chip scratching protection liquid, also known as CIS chip cutting protection liquid. This protection liquid can form a protective film on the surface of the wafer to ensure that the wafer is not damaged by external forces during the scratching process, thereby improving the yield of the CIS chip. It has good application prospects and industrial promotion value in the field of semiconductor processing.

[0005] It should be noted that, in the present invention, unless otherwise specified, the specific meaning of "including" in relation to composition limitations and descriptions includes both open-ended "including", "comprising", etc. and similar meanings, as well as closed-ended "composed of", "composed of", etc. and similar meanings.

[0006] To achieve the above object, the technical solution adopted by the present invention is: a CIS chip scratch protection liquid, comprising the following components in the following weight proportions:

[0007] 15-25 parts of silane-modified polyvinyl acetate;

[0008] 50-100 parts of diluent;

[0009] 0.5-6 parts of anti-gelling agent;

[0010] The anti-gelling auxiliary agent is a high-boiling point alcohol.

[0011] Furthermore, the silane-modified polyvinyl acetate is one or more of 3-aminopropyltriethoxysilane-modified polyvinyl acetate, 3-chloropropyltriethoxysilane-modified polyvinyl acetate, methyltriethoxysilane-modified polyvinyl acetate and 3-(diethoxyethyl)aminopropyltriethoxysilane-modified polyvinyl acetate.

[0012] Furthermore, the silane-modified polyvinyl acetate is preferably 3-chloropropyltriethoxysilane-modified polyvinyl acetate and / or 3-(diethoxyethyl)aminopropyltriethoxysilane-modified polyvinyl acetate.

[0013] Furthermore, the silane-modified polyvinyl acetate is most preferably 3-(diethoxyethyl)aminopropyltriethoxysilane-modified polyvinyl acetate.

[0014] Furthermore, the molecular weight of the silane-modified polyvinyl acetate is 3000-15000.

[0015] Furthermore, the molecular weight of the silane-modified polyvinyl acetate is preferably 3,000-10,000.

[0016] Furthermore, the molecular weight of the silane-modified polyvinyl acetate is most preferably 4000-8000. Controlling the molecular weight between 4000-8000 can enhance the cleanability of the resin and help increase the film thickness in the subsequent coating.

[0017] Furthermore, the preparation method of the silane-modified polyvinyl acetate is as follows:

[0018] Step (1): dissolving polyvinyl acetate in an organic solvent to obtain a polyvinyl acetate solution;

[0019] Step (2): dropping silane into an acetic acid aqueous solution to obtain a silane solution;

[0020] Step (3): Mix the polyvinyl acetate solution and the silane solution, add acid, and react at 30° C.-60° C. for 1-3 hours to obtain silane-modified polyvinyl acetate.

[0021] Furthermore, the amount of the organic solvent used in step (1) is not limited, as long as it can dissolve polyvinyl acetate.

[0022] Furthermore, in step (2), silane is dripped into the acetic acid aqueous solution. After the dripping is completed, stirring is continued for 30-60 minutes until the aqueous solution is almost transparent. At this time, the hydrolysis reaction of the silane coupling agent is basically completed to obtain a silane solution.

[0023] Furthermore, the amount of the organic solvent used in step (3) is not limited, as long as it can dissolve the silane.

[0024] Furthermore, the reaction temperature in step (3) is preferably 40°C-60°C.

[0025] Furthermore, the reaction temperature in step (3) is most preferably 40°C-50°C.

[0026] Furthermore, the reaction time of step (3) is preferably 1.5-3 h.

[0027] Furthermore, the reaction time of step (3) is most preferably 1.5-2.5 h.

[0028] Furthermore, the mass ratio of each component in the preparation method of silane-modified polyvinyl acetate is:

[0029]

[0030] Furthermore, the polyvinyl acetate is preferably 30-50 parts.

[0031] Furthermore, the polyvinyl acetate is most preferably 40-50 parts.

[0032] Furthermore, the organic solvent is preferably 70-100 parts.

[0033] Furthermore, the organic solvent is most preferably 70-90 parts.

[0034] Furthermore, the silane is preferably 1-3 parts.

[0035] Furthermore, the silane is most preferably 1-2 parts.

[0036] Furthermore, the acetic acid aqueous solution is preferably 0.1-1 parts.

[0037] Furthermore, the acetic acid aqueous solution is most preferably 0.1-0.5 parts.

[0038] Furthermore, the acid is preferably 0.05-0.3 parts.

[0039] Furthermore, the acid is most preferably 0.05-0.2.

[0040] Furthermore, the mass concentration of the acetic acid aqueous solution is 0.1-2 wt.%. During the hydrolysis process, too high a concentration of the acetic acid aqueous solution will lead to an overly violent reaction and cause gelation problems.

[0041] Furthermore, the organic solvent is one or more of ethanol, acetic acid, acetone, ethyl acetate and isopropanol.

[0042] Furthermore, the organic solvent is preferably ethanol and / or isopropanol.

[0043] Furthermore, the organic solvent is most preferably isopropyl alcohol.

[0044] Furthermore, the silane is one or more of 3-aminopropyltriethoxysilane, 3-chloropropyltriethoxysilane, methyltriethoxysilane and 3-(diethoxyethyl)aminopropyltriethoxysilane.

[0045] Furthermore, the acid is one or more of acetic acid, oxalic acid, sulfuric acid and hydrochloric acid.

[0046] Furthermore, the acid is preferably sulfuric acid and / or hydrochloric acid.

[0047] Furthermore, the acid is most preferably hydrochloric acid.

[0048] Furthermore, the silane-modified polyvinyl acetate is preferably 15-23 parts.

[0049] Furthermore, the silane-modified polyvinyl acetate is most preferably 15-20 parts.

[0050] Furthermore, the diluent is alcohol and / or ether.

[0051] Furthermore, the alcohol is one or more of methanol, ethanol, n-propanol, isopropanol, n-butanol, tert-butanol and isobutanol.

[0052] Furthermore, the ether is one or more of di-n-butyl ether, propylene glycol methyl ether, ethylene glycol propyl ether and tetrahydrofuran.

[0053] Furthermore, the diluent is preferably isopropyl alcohol and / or propylene glycol methyl ether.

[0054] Furthermore, the diluent is a mixed solution of alcohol and ether in a mass ratio of 1:2-3.

[0055] Furthermore, the diluent is most preferably a mixed solution of isopropyl alcohol and propylene glycol methyl ether in a mass ratio of 1:2-3.

[0056] Furthermore, the diluent is preferably 60-90 parts.

[0057] Furthermore, the diluent is most preferably 70-80 parts.

[0058] Furthermore, the anti-gelling aid is a high-boiling-point alcohol, which refers to a polyol with a boiling point greater than or equal to 180° C., preferably one or more of diethylene glycol, triethylene glycol, tetraethylene glycol, glycerol and 1,2-butanediol.

[0059] Furthermore, the anti-gelling auxiliary agent is preferably diethylene glycol and / or triethylene glycol.

[0060] Furthermore, the anti-gelling auxiliary agent is most preferably diethylene glycol.

[0061] Furthermore, the anti-gelling agent is preferably 1-5 parts.

[0062] Furthermore, the anti-gelling agent is most preferably 2-4 parts.

[0063] Another object of the present invention is to disclose a method for preparing a CIS chip scratch protection liquid, comprising the following steps:

[0064] Silane-modified polyvinyl acetate, a diluent, and an anti-gelling agent were weighed in parts by mass, and mixed to prepare a CIS chip scratch protection liquid.

[0065] Furthermore, the mixing conditions are: stirring at a speed of 200-500 rpm for 1-5 hours at room temperature.

[0066] Another object of the present invention is to disclose a CIS chip scratch protection liquid for use in semiconductor cutting protection, particularly for CIS chip scratch protection. The CIS chip scratch protection liquid is adaptable to CIS chips of varying structures, forming a protective film on the wafer surface to protect the wafer from external forces during the scratching process, thereby improving the yield of the CIS chip.

[0067] Furthermore, the method of using the CIS chip scratch protection liquid is as follows:

[0068] C1: Clean the wafer;

[0069] C2: Spin-coat CIS chip scratch protection liquid on the wafer;

[0070] C3: After spin coating, subsequent film lamination, back grinding and thinning, wafer bonding, film removal, cutting, transfer, and rearrangement processes are carried out;

[0071] C4: Remove the protective film layer.

[0072] Furthermore, the spin coating amount of the CIS chip scratch protection liquid is 0.06-0.07 ml / cm 2 .

[0073] Furthermore, the spin coating speed in C2 is 800-1200 rpm, and the spin coating time is 90-150 s.

[0074] The CIS chip scratch protection liquid of the present invention, its preparation method and use, have the following advantages compared with the prior art:

[0075] 1) The present invention adds silane-modified polyvinyl acetate to the protective liquid. Compared to directly adding a curing agent or crosslinking agent, silane-modified polyvinyl acetate not only has more stable performance but also has high adhesion and water resistance. Furthermore, because the silane is directly grafted onto the polyvinyl acetate molecular chain, the -Si-O- group forms a covalent bond with the material surface, achieving a strong chemical bond. This bonding significantly enhances interfacial strength. In contrast, traditional simple physical mixing relies solely on weak interactions such as van der Waals forces or hydrogen bonds, which are easily affected by the environment (such as humidity and temperature), resulting in insufficient adhesion and easy film shedding.

[0076] 2) The present invention uses high-boiling-point alcohols as anti-gelling agents. The hydroxyl groups (-OH) in their molecules can form hydrogen bonds with the hydroxyl groups on the silane-modified polyvinyl acetate molecular chains. The formation of hydrogen bonds interferes with the interaction between the silane-modified polyvinyl acetate molecular chains, thereby slowing the aggregation and crosslinking process of the silane-modified polyvinyl acetate molecular chains and effectively preventing gelation. At the same time, the addition of anti-gelling agents can interfere with the crystallization process of the silane-modified polyvinyl acetate molecular chains, reducing the crystallinity of the system, thereby increasing the mobility of the molecular chains and enhancing their mobility, making it easier for cleaning agents to penetrate into the interior of the film layer and remove the film layer, facilitating subsequent cleaning. In addition, by precisely controlling the amount of anti-gelling agent added, the present invention can adjust the drying speed of the film layer and avoid cracking of the film layer caused by excessive drying. The anti-gelling agent has multiple functions, reducing the type and amount of additives in the formula, reducing the complexity and cost of the formula, and avoiding mutual interference between different additives. This compatibility can ensure the stability of the formula during processing and use, and reduce the performance degradation caused by the interaction of additives.

[0077] 3) The present invention uses a solvent with a polarity similar to that of the anti-gelling agent as a diluent. Its polar groups can form chemical bonds (such as covalent bonds, hydrogen bonds, etc.) with polar functional groups on the substrate surface, thereby enhancing adhesion. The full solvent component can reduce surface tension, making it easier for the protective liquid to wet the substrate surface, achieving better spreading and penetration. In addition, during the curing process, the rapid volatilization of the solvent causes the distance between the molecules of the film-forming substance to be reduced, forming a dense coating structure, which not only improves the cohesion of the coating, but also enhances its adhesion to the substrate.

[0078] 4) The wafer CIS chip scratch protection liquid of the present invention is coated before wafer thinning. The coated wafer can undergo subsequent film pasting, back grinding and thinning, wafer pasting, film removal, cutting, transfer, and rearrangement processes and then be cleaned. Compared with the existing cutting protection liquid that is coated before cutting and cleaned after cutting, the CIS chip scratch protection liquid of the present invention can continuously realize more than 6 steps of wafer processing process, which significantly improves the process reliability and protection effect.

[0079] The CIS chip scratch protection liquid of the present invention has good application prospects and large-scale promotion potential in the field of semiconductor cutting protection. BRIEF DESCRIPTION OF THE DRAWINGS

[0080] Figure 1 is the infrared spectrum of silane-modified polyvinyl acetate SVAc-1;

[0081] Figure 2 This is a flow chart of the coating process before wafer thinning.

[0082] Figure 3 This is a flow chart of the prior art wafer coating process before cutting.

[0083] Figure 4 This is a photo of the film layer state of Comparative Example 1.

[0084] Figure 5 This is a photo of the film layer state of Example 1. DETAILED DESCRIPTION

[0085] The present invention will be further described below with reference to the following examples. The following description of the technical features is based on representative embodiments and specific examples of the present invention, but the present invention is not limited to these embodiments and specific examples. It should be noted that:

[0086] Unless otherwise stated, the units used in this specification are international standard units, and the numerical values and numerical ranges appearing in the present invention should be understood to include the inevitable systematic errors in industrial production.

[0087] In this specification, the numerical range expressed using "a numerical value A to a numerical value B" means a range including the endpoints A and B.

[0088] In this specification, the numerical range expressed using "above" or "below" means a numerical range including the number.

[0089] In this specification, the use of "may" includes both the meaning of performing a certain process and the meaning of not performing a certain process.

[0090] In this specification, the use of "optional" or "optional" indicates that certain substances, components, execution steps, application conditions and other factors are used or not used.

[0091] In this specification, when "normal temperature" or "room temperature" is used, the temperature may be 15-25°C.

[0092] In this manual, the reagents or instruments used without indicating the manufacturer are all conventional products that can be obtained through commercial purchase.

[0093] Examples 1-7

[0094] Examples 1-7 disclose a variety of CIS chip scratch protection liquids, the components and amounts of which are shown in Table 1. The preparation method is as follows: weigh the respective mass parts of silane-modified polyvinyl acetate, diluent and anti-gelling agent according to Table 1; add each component into a mixing container equipped with a stirrer, and stir at a speed of 400 rpm at room temperature for 3 hours to obtain the CIS chip scratch protection liquid.

[0095] Table 1 Components and dosages of the CIS chip scratch protection solution in Examples 1-7

[0096]

[0097]

[0098] Comparative Examples 1-7

[0099] Comparative Examples 1-7 disclose a variety of CIS chip scratch protection liquids, the components and amounts of which are shown in Table 2, and the preparation methods thereof are the same as those of Example 1.

[0100] Table 2 Components and dosages of comparative examples 1-7 CIS chip scratch protection solution

[0101]

[0102]

[0103] The preparation methods of the silane-modified polyvinyl acetates SVAc-1 to SVAc-7 used in Examples 1-7 and Comparative Examples 1-7 are as follows:

[0104] Step (1): Dissolving polyvinyl acetate

[0105] The polyvinyl acetate is stirred in the organic solvent until it is completely dissolved to obtain a uniform polyvinyl acetate solution.

[0106] Step (2): Preparation of pre-hydrolyzed silane solution

[0107] Silane was slowly dripped into the acetic acid aqueous solution. After the addition was completed, stirring was continued for 45 minutes until the aqueous solution was almost transparent. At this time, the hydrolysis reaction of the silane coupling agent was basically completed to obtain a silane solution.

[0108] Step (3): Mixing reaction

[0109] The polyvinyl acetate solution and the silane solution were mixed and stirred until uniform, and acid was added to promote the reaction. The reaction temperature was 45°C and the reaction time was 2 hours to obtain silane-modified polyvinyl acetate.

[0110] The components and amounts used to prepare silane-modified polyvinyl acetate are shown in Table 3.

[0111] Table 3 Components and dosages used in the preparation of silane-modified polyvinyl acetate

[0112]

[0113]

[0114] Figure 1 is the infrared spectrum of silane-modified polyvinyl acetate SVAc-1; Figure 1 NH stretching vibration can be seen at 3300-3500cm -1 A broad and strong absorption peak appears at , which is the characteristic absorption of amino group;

[0115] C=O stretching vibration: at 1720cm -1 There are strong absorption peaks on the left and right, which are the characteristic absorption peaks of the ester group (-COO-) in polyvinyl acetate;

[0116] Si-OC stretching vibration: 1000-1100 cm -1 A strong absorption peak appears at

[0117] Si-O stretching vibration: 800-900 cm -1 An absorption peak appears at

[0118] CO stretching vibration: 1150-1300 cm -1 Absorption peaks appear on the left and right;

[0119] Stretching vibration of CH2 and CH3: at 2950cm -1 The characteristic absorption peaks of methyl (-CH3) and methylene (-CH2-) appeared on the left and right, indicating that the target product, silane-modified polyvinyl acetate SVAc-1, was successfully synthesized.

[0120] The protective solutions of Examples 1-7 and Comparative Examples 1-7 were tested respectively. The test methods and test results are as follows:

[0121] Performance 1 Water resistance test method is:

[0122] Spin-coat the protective liquid on the Dummy sheet and solidify it. Use an ultra-thin wafer cutting machine to cut the Dummy sheet into 6mm*4mm sizes. Spray water on the cutting wheel to cool it down during the cutting process. After cutting, spin-dry the Dummy sheet. If the protective film on the Dummy sheet does not fall off, it indicates that its water resistance meets the requirements.

[0123] Performance 2 Adhesion Test Method:

[0124] The protective liquid was spin-coated onto a dummy sheet and cured. The coating adhesion was tested using the 100-grid method. A 100-grid cutter was used to create a 10x10 grid of 1mm x 1mm (100 pieces) on the surface of the test sample. Debris was removed from the test area with a brush. 3M tape was applied to the grid area and the tape was removed from the grid area with a quick, forceful pull. The removal of the tape from the grid area was observed. If the edge of the cut is completely smooth and there is no peeling at the edge of the grid, it is expressed as 5B; if there is small peeling at the intersection of the cut, but the actual damaged area in the grid area is less than or equal to 5%, it is expressed as 4B; if there is peeling at the edge of the cut or at the intersection, and the peeling area is greater than 5% but less than 15%, it is expressed as 3B; if the peeling area is more than 15% but less than 35%, it is expressed as 2B; if some squares are partially or completely peeled off, and the peeling area is greater than 35% but less than 65%, it is expressed as 1B; if large pieces of the cut edge peel off, and the peeling area is more than 65%, it is expressed as 0B.

[0125] The test method for performance 3 gel time is:

[0126] The protective solutions provided in the above examples and comparative examples were stored in packaging barrels at 35°C and observed every two weeks for a period of 6 months. If insoluble matter precipitated or gelled, the gel time of the protective solution was determined. The test results are shown in Table 4.

[0127] The test method for performance 4 film stability is:

[0128] C1: Clean the wafer;

[0129] C2: Add cutting protection material on the wafer and spin coat at 1000 rpm for 2 minutes.

[0130] C3: After spin coating, observe whether the film layer is intact and whether cracks occur.

[0131] Figure 4 This is a picture of the film layer state of Comparative Example 1, and it can be seen that the film layer is cracked.

[0132] Figure 5 This is a picture of the film layer state of Example 1. It can be seen that the film layer is intact and not cracked.

[0133] The test results of the protective solutions of Examples 1-7 and Comparative Examples 1-7 are shown in Table 4.

[0134] Table 4 Test results

[0135]

[0136]

[0137] Table 4 shows that all examples 1-7 meet the performance requirements. In Comparative Example 1, the film cracks and shortens its shelf life due to excessive drying, and is prone to gelling. In Comparative Example 2, SVAc-6 does not contain an acetic acid solution, Comparative Example 3 uses unmodified polyvinyl acetate, and Comparative Example 4 uses acrylic acid-modified polyvinyl acetate. Comparative Examples 2, 3, and 4 all exhibit insufficient adhesion and water resistance, leading to shedding. In Comparative Example 5, excessive anti-gelling agent remains in the film, resulting in insufficient adhesion and water resistance. In Comparative Example 6, the resin hydrolysis results in excessive acid, resulting in gelation and inability to prepare a protective solution. In Comparative Example 7, a low-boiling-point monohydric alcohol is used as an anti-gelling agent, but its boiling point is too low to aid film formation, and its low hydroxyl content reduces its anti-gelling effect, resulting in poor overall performance.

[0138] Figure 2 This is the process flow chart of coating before wafer thinning, from Figure 2 It can be seen that the wafer is protected for a total of 7 steps. Figure 3 This is the process flow chart of coating before wafer cutting, from Figure 3 It can be seen that the wafer is protected for a total of 1 step. Figure 2 Give which steps are protected by the present invention, Figure 3 This is the situation of prior art protection. It shows that the present invention can continuously implement 6 steps of wafer processing protection.

[0139] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the above embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A CIS chip scratch protection liquid, characterized in that: The composition comprises the following components in the following weight ratios: 15-25 parts of silane-modified polyvinyl acetate; 50-100 parts of diluent; 0.5-6 parts of anti-gelling agent; The anti-gelling auxiliary agent is a high-boiling point alcohol.

2. The CIS chip scratch protection liquid according to claim 1, characterized in that: The silane-modified polyvinyl acetate is one or more of 3-aminopropyltriethoxysilane-modified polyvinyl acetate, 3-chloropropyltriethoxysilane-modified polyvinyl acetate, methyltriethoxysilane-modified polyvinyl acetate and 3-(diethoxyethyl)aminopropyltriethoxysilane-modified polyvinyl acetate.

3. The CIS chip scratch protection liquid according to claim 1 or 2, characterized in that: The preparation method of the silane-modified polyvinyl acetate is as follows: Step (1): dissolving polyvinyl acetate in an organic solvent to obtain a polyvinyl acetate solution; Step (2): dropping silane into an acetic acid aqueous solution to obtain a silane solution; Step (3): Mix the polyvinyl acetate solution and the silane solution, add acid, and react at 30° C.-60° C. for 1-3 hours to obtain silane-modified polyvinyl acetate.

4. The CIS chip scratch protection liquid according to claim 3, characterized in that: The mass ratio of each component in the preparation method of silane-modified polyvinyl acetate is:

5. The CIS chip scratch protection liquid according to claim 3, characterized in that: The silane in step (2) is one or more of 3-aminopropyltriethoxysilane, 3-chloropropyltriethoxysilane, methyltriethoxysilane and 3-(diethoxyethyl)aminopropyltriethoxysilane.

6. The CIS chip scratch protection liquid according to claim 3, characterized in that: The acid in step (3) is one or more of acetic acid, oxalic acid, sulfuric acid and hydrochloric acid.

7. The CIS chip scratch protection liquid according to claim 1, characterized in that: The diluent is alcohol and / or ether; The alcohol is one or more of methanol, ethanol, n-propanol, isopropanol, n-butanol, tert-butanol and isobutanol; The ether is one or more of di-n-butyl ether, propylene glycol methyl ether, ethylene glycol propyl ether and tetrahydrofuran.

8. The CIS chip scratch protection liquid according to claim 1, characterized in that: The anti-gelling auxiliary agent is one or more of diethylene glycol, triethylene glycol, tetraethylene glycol, glycerol and 1,2-butanediol.

9. A method for preparing the CIS chip scratch protection liquid according to any one of claims 1 to 8, characterized in that: The method comprises the following steps: respectively weighing parts by mass of silane-modified polyvinyl acetate, a diluent and an anti-gelling auxiliary agent, and mixing them to prepare a CIS chip scratch protection liquid.

10. Use of the CIS chip scratch protection liquid according to any one of claims 1 to 8 in the field of semiconductor cutting protection.

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