Gallium oxide solar blind photoelectric detector and preparation method and spectrum detection method thereof
By using multiple layers of photosensitive layers with different bandwidths and aluminum gallium oxygen films containing doped elements in the gallium oxide sun blind photodetector, the problem of narrow spectral response range of the gallium oxide sun blind ultraviolet photodetector is solved, wide spectrum detection is achieved, and the application range is broadened.
Patent Information
- Application Number
- CN202510664684.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-05-22
- Publication Date
- 2025-08-12
AI Technical Summary
The existing gallium oxide daily blind ultraviolet photodetector has a narrow spectral response range, resulting in poor daily blind light response to other bands and incomplete signal response, limiting its application range.
Multi-layer aluminum gallium oxygen film is used, and each layer has a photosensitive layer with different bandwidths of different band gaps. It absorbs light of different wavelengths through different photosensitive layers, and combines the aluminum gallium oxygen film with doped elements to improve conductivity, form ohmic contacts, and enhance spectral response.
The spectral response range of gallium oxide sun blind photodetector has been broadened, the absorption capacity of light of different wavelengths has been enhanced, the problem of narrow spectral response range has been alleviated, and the application range has been expanded.
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Figure CN120475781A_ABST
Abstract
Description
Technical Field
[0001] The present disclosure relates to the field of ultraviolet detection technology, and in particular to a gallium oxide solar-blind photodetector and a preparation method and a spectrum detection method thereof. Background Art
[0002] The Earth's atmosphere absorbs ultraviolet light from the sun with wavelengths between 200nm and 280nm, making this wavelength band "solar-blind." Furthermore, signals within this spectral region can be effectively collected without being affected by solar radiation, resulting in a high signal-to-noise ratio and strong anti-interference capabilities. However, the spectral response range of current single-use gallium oxide solar-blind UV photodetectors is relatively narrow, resulting in poor response to solar-blind light in other wavelengths and incomplete signal response. Summary of the Invention
[0003] In view of the above problems, the present disclosure provides a gallium oxide solar-blind photodetector, a preparation method thereof, and a spectral detection method.
[0004] According to a first aspect of the present disclosure, a gallium oxide solar-blind photodetector is provided, comprising: a gallium oxide single crystal substrate; a back electrode disposed at the bottom of the above-mentioned gallium oxide single crystal substrate; an aluminum gallium oxide thin film disposed on the upper portion of the above-mentioned gallium oxide single crystal substrate, wherein the above-mentioned aluminum gallium oxide thin film comprises a plurality of photosensitive layers having different aluminum component contents, the plurality of photosensitive layers having different bandgap widths, and the photosensitive layers are used to absorb and detect light wavelengths corresponding to the bandgap widths; and an electrode disposed on the upper portion of the above-mentioned aluminum gallium oxide thin film.
[0005] According to an embodiment of the present disclosure, the gallium oxide solar-blind photodetector further includes: an aluminum gallium oxide film containing doped elements is provided on the above-mentioned aluminum gallium oxide film, and the above-mentioned electrode is provided on the above-mentioned aluminum gallium oxide film containing doped elements.
[0006] According to an embodiment of the present disclosure, the AlGaO thin film containing doped elements forms an ohmic contact with the electrode to improve the conductivity between the AlGaO thin film containing doped elements and the electrode.
[0007] According to an embodiment of the present disclosure, the content of the aluminum component in the aluminum gallium oxide thin film containing the doping element is higher than the content of the aluminum component in each of the photosensitive layers.
[0008] According to an embodiment of the present disclosure, the thickness of the back electrode is 1-2000 nm, and the thickness of the electrode is 1-2000 nm.
[0009] According to an embodiment of the present disclosure, the thickness of the aluminum gallium oxide film is 20 nm to 2 μm; and the number of photosensitive layers in the aluminum gallium oxide film is 1 to 20.
[0010] A second aspect of the present disclosure provides a method for preparing a gallium oxide solar-blind photodetector, the method comprising: forming a back electrode on the lower portion of a gallium oxide single crystal substrate; growing an aluminum gallium oxide thin film on the upper portion of the gallium oxide single crystal substrate, wherein the aluminum gallium oxide thin film comprises a plurality of photosensitive layers having different aluminum component contents; and forming an electrode on the upper portion of the aluminum gallium oxide thin film.
[0011] According to an embodiment of the present disclosure, the above-mentioned preparation method further includes: growing an aluminum gallium oxide film containing doped elements on the upper portion of the above-mentioned aluminum gallium oxide film; and forming the above-mentioned electrode on the upper portion of the above-mentioned aluminum gallium oxide film containing doped elements.
[0012] According to an embodiment of the present disclosure, the preparation method further includes: forming a mask layer on the upper portion of the gallium oxide single crystal substrate, and removing the mask layer after forming the back electrode on the lower portion of the gallium oxide single crystal substrate.
[0013] The third method disclosed herein provides a spectral detection method, which includes: utilizing multiple photosensitive layers in a gallium oxide solar-blind photodetector to absorb and detect light of wavelengths corresponding to the photosensitive layers, respectively, to achieve spectral detection of light of different wavelengths.
[0014] According to the gallium oxide day-blind photodetector and its preparation method and spectral detection method provided by the present invention, multiple photosensitive layers with different bandgap widths are used in the gallium oxide day-blind photodetector. Different photosensitive layers with different bandgap widths absorb light of different wavelengths, so that different photosensitive layers can play their respective roles to achieve wide-spectrum detection. On this basis, the spectral response range of the gallium oxide day-blind photodetector is increased, alleviating the problem of the narrow spectral response range of the current single gallium oxide material device. BRIEF DESCRIPTION OF THE DRAWINGS
[0015] The above contents and other objects, features and advantages of the present disclosure will become more apparent through the following description of the embodiments of the present disclosure with reference to the accompanying drawings, in which:
[0016] Figure 1 Schematically shows a schematic diagram of a gallium oxide solar-blind photodetector according to an embodiment of the present disclosure;
[0017] Figure 2 Schematically shows a schematic diagram of a gallium oxide solar-blind photodetector according to another embodiment of the present disclosure;
[0018] Figure 3 Schematic diagram showing the absorption of solar-blind light of a target wavelength by a photosensitive layer according to an embodiment of the present disclosure;
[0019] Figure 4 A flow chart schematically illustrates a method for preparing a gallium oxide solar-blind photodetector according to an embodiment of the present disclosure;
[0020] Figure 5 The following schematically shows a preparation process diagram of a gallium oxide solar-blind photodetector according to an embodiment of the present disclosure; and
[0021] Figure 6 The figure schematically shows a preparation process diagram of a gallium oxide solar-blind photodetector according to another embodiment of the present disclosure. DETAILED DESCRIPTION
[0022] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. However, it should be understood that these descriptions are merely exemplary and are not intended to limit the scope of the present disclosure. In the detailed description below, for ease of explanation, many specific details are set forth to provide a comprehensive understanding of the embodiments of the present disclosure. However, it is apparent that one or more embodiments may also be implemented without these specific details. In addition, in the following description, descriptions of well-known structures and technologies are omitted to avoid unnecessary confusion of the concepts of the present disclosure.
[0023] The terms used herein are only for describing specific embodiments and are not intended to limit the present disclosure. The terms "comprise," "include," etc. used herein indicate the presence of the features, steps, operations, and / or components, but do not exclude the presence or addition of one or more other features, steps, operations, or components.
[0024] All terms used herein (including technical and scientific terms) have the meanings commonly understood by those skilled in the art unless otherwise defined. It should be noted that the terms used herein should be interpreted as having a meaning consistent with the context of this specification and should not be interpreted in an idealized or overly rigid manner.
[0025] When expressions such as "at least one of A, B, and C, etc." are used, they should generally be interpreted in accordance with the meaning commonly understood by those skilled in the art (for example, "a system having at least one of A, B, and C" should include but is not limited to a system having A alone, B alone, C alone, A and B, A and C, B and C, and / or A, B, C, etc.).
[0026] Ultra-wide bandgap semiconductor materials, including diamond, aluminum nitride, and gallium oxide, are currently considered ideal candidates for next-generation photodetectors due to their ultra-wide bandgap and filter independence. Gallium oxide, with its bandgap (4.9 eV) directly corresponding to the solar-blind wavelength range, is considered one of the most promising materials for solar-blind photodetectors.
[0027] However, although the bandgap width of gallium oxide directly corresponds to the solar-blind light band, the spectral response range of current single gallium oxide solar-blind ultraviolet photodetectors is relatively narrow, mainly concentrated at 254nm. This results in gallium oxide photodetectors having poor response to solar-blind light in other bands and incomplete signal response, and also limits the application range of photodetectors. To this end, the embodiments of the present disclosure provide a gallium oxide solar-blind photodetector to achieve the purpose of wide-spectrum solar-blind light detection and also broaden the application of gallium oxide solar-blind ultraviolet detection.
[0028] Figure 1 A schematic diagram of a gallium oxide solar-blind photodetector according to an embodiment of the present disclosure is schematically shown.
[0029] like Figure 1 As shown, the gallium oxide solar-blind photodetector according to this embodiment may include a gallium oxide single crystal substrate 1, a back electrode 2 arranged at the bottom of the gallium oxide single crystal substrate 1, an aluminum gallium oxide thin film 3 arranged on the upper part of the gallium oxide single crystal substrate 1, and an electrode 4 arranged on the upper part of the aluminum gallium oxide thin film 3.
[0030] The aluminum gallium oxide thin film 3 may include multiple photosensitive layers with different aluminum component contents, and the multiple photosensitive layers have different band gaps. The photosensitive layers are used to absorb and detect light wavelengths corresponding to the band gaps.
[0031] Specifically, the bandgap width varies depending on the aluminum content in the photosensitive layer. A photosensitive layer with a high aluminum content has a wider bandgap, allowing it to absorb shorter-wavelength, day-blinding light. A photosensitive layer with a low aluminum content has a lower bandgap, allowing it to absorb longer-wavelength, day-blinding light.
[0032] According to an embodiment of the present disclosure, the gallium oxide single crystal substrate 1 may be a gallium oxide single crystal substrate of any crystal plane. For example, the gallium oxide single crystal substrate 1 may be a (010) crystal plane, or a (100) crystal plane.
[0033] In one embodiment, the thickness of the back electrode 2 may be 1-2000 nm, and the thickness of the electrode 4 may be 1-2000 nm.
[0034] According to the embodiment of the present disclosure, if the thickness of the back electrode 2 and the electrode 4 is too thick, it will affect the conductive performance of the electrode and also cause a certain amount of material waste. Therefore, the thickness of the back electrode 2 and the electrode 4 can be 1~2000nm to avoid material waste while ensuring conductive performance.
[0035] In one embodiment, the thickness of the AlGaO thin film 3 may be 20 nm to 2 μm; and the number of photosensitive layers in the AlGaO thin film 3 may be 1 to 20.
[0036] The thickness of each photosensitive layer in the AlGaO thin film 3 can be set as needed.
[0037] According to the embodiments of the present disclosure, a gallium oxide solar-blind photodetector uses multiple photosensitive layers with different bandgap widths. Different photosensitive layers with different bandgap widths absorb light of different wavelengths, allowing different photosensitive layers to play their respective roles to achieve wide-spectrum detection. On this basis, the spectral response range of the gallium oxide solar-blind photodetector is increased, alleviating the problem of the narrow spectral response range of current single gallium oxide material devices.
[0038] Figure 2 A schematic diagram of a gallium oxide solar-blind photodetector according to another embodiment of the present disclosure is schematically shown.
[0039] like Figure 2 As shown, the AlGaO thin film 5 containing doped elements is optional, and whether the AlGaO thin film 5 containing doped elements is needed can be determined based on whether the conductivity needs to be increased to match the electrode in actual situations.
[0040] Therefore, when the conductivity of the AlGaO film 3 is very poor, an AlGaO film 5 containing doped elements can be provided on the AlGaO film 3 , and the electrode 4 can also be provided on the AlGaO film 5 containing doped elements.
[0041] The doped element in the AlGaO thin film 5 includes but is not limited to one of the following: silicon and tin.
[0042] According to an embodiment of the present disclosure, the AlGaO thin film containing doped elements forms an ohmic contact with an electrode to improve the conductivity between the AlGaO thin film containing doped elements and the electrode.
[0043] Specifically, the doping element is to enable the AlGaO thin film 5 containing the doping element to form an ohmic contact with the electrode 4 to achieve better conductivity.
[0044] The doping element may include an element that, after being doped, enables the AlGaO thin film 5 containing the doping element to have high conductivity and form an N-type AlGaO thin film.
[0045] According to an embodiment of the present disclosure, the content of the aluminum component in the aluminum gallium oxide thin film 5 containing the doping element is higher than the content of the aluminum component in each photosensitive layer.
[0046] Figure 3 The diagram schematically shows the absorption of solar-blind light of a target wavelength by a photosensitive layer according to an embodiment of the present disclosure.
[0047] like Figure 3As shown, taking the aluminum gallium oxide thin film 3 including 5 photosensitive layers as an example, the content of aluminum components in these 5 photosensitive layers is different, that is, the wavelengths of light that can be absorbed by the photosensitive layer 3_1, photosensitive layer 3_2, photosensitive layer 3_3, photosensitive layer 3_4, and photosensitive layer 3_5 are different.
[0048] According to an embodiment of the present disclosure, ultraviolet light is incident from the electrode 4 in the gallium oxide solar-blind photodetector.
[0049] When the target wavelength is longer, the solar-blind light of the target wavelength will pass through the AlGaO thin film 5 containing doped elements and the photosensitive layer with high aluminum content in the AlGaO thin film 3 until it is absorbed by the corresponding photosensitive layer with low aluminum content.
[0050] When the target wavelength is shorter, the day-blind light of the target wavelength will be directly absorbed by the AlGaO thin film 5 containing the doped element or absorbed by the corresponding photosensitive layer with high aluminum component in the AlGaO thin film 3 .
[0051] by Figure 3 For example, based on the aluminum content of each of the photosensitive layer 3_1, the photosensitive layer 3_2, the photosensitive layer 3_3, the photosensitive layer 3_4, and the photosensitive layer 3_5, the photosensitive layer 3_2 is capable of absorbing daylight-blinding light of a target wavelength. Therefore, the daylight-blinding light of the target wavelength will pass through the photosensitive layer 3_5, the photosensitive layer 3_4, and the photosensitive layer 3_3 and be absorbed by the photosensitive layer 3_2.
[0052] Therefore, each photosensitive layer in the gallium oxide solar-blind photodetector disclosed in the present invention can be used to absorb solar-blind light of different wavelengths, thereby increasing the spectral response of the gallium oxide solar-blind photodetector.
[0053] Figure 4 The flowchart of the method for preparing the gallium oxide solar-blind photodetector according to an embodiment of the present disclosure is schematically shown.
[0054] like Figure 4 As shown, the preparation method 400 includes operations S410 to S430.
[0055] Figure 5 The following schematically shows a preparation process diagram of a gallium oxide solar-blind photodetector according to an embodiment of the present disclosure.
[0056] In operation S410 , a back electrode is formed at a lower portion of a gallium oxide single crystal substrate.
[0057] According to an embodiment of the present disclosure, before performing operation S410 , the gallium oxide single crystal substrate 1 needs to be cleaned, blow-dried, and then baked.
[0058] In one embodiment, the gallium oxide single crystal substrate 1 is pickled in piranha solution (concentrated sulfuric acid: hydrogen peroxide = 3:1) for 30 minutes, then taken out and rinsed with deionized water. It is then blown dry with nitrogen gas. After drying, the gallium oxide single crystal substrate 1 is placed on a hot plate at 120° C. and baked for 2 minutes.
[0059] The solution for cleaning the gallium oxide single crystal substrate 1 , the gas for drying the gallium oxide single crystal substrate 1 , and the temperature and time for baking the gallium oxide single crystal substrate 1 can all be selected and set as needed.
[0060] like Figure 5 As shown in FIG, a mask layer 3 is formed on the upper portion of the gallium oxide single crystal substrate 1, and on this basis, a back electrode 2 is formed on the lower portion of the gallium oxide single crystal substrate 1. After the back electrode 2 is formed on the lower portion of the gallium oxide single crystal substrate 1, the mask layer 3 is removed.
[0061] When forming the back electrode 2 at the bottom of the gallium oxide single crystal substrate 1, the other side of the gallium oxide single crystal substrate 1 needs to contact the platform. Therefore, in order to protect the other side of the gallium oxide single crystal substrate 1, a mask layer 3 can be formed on the other side of the gallium oxide single crystal substrate 1 to prevent the other side of the gallium oxide single crystal substrate 1 from directly contacting the platform.
[0062] In one embodiment, the mask layer 3 may include photoresist.
[0063] In one embodiment, the material of the back electrode 3 may include at least one of the following: Ti, Ni, Al, Cu, and Au.
[0064] The back electrode 3 may include at least one metal layer.
[0065] In one embodiment, standard electron beam evaporation coating may be used to grow metal titanium / gold as the back electrode, with thicknesses of 40 nm and 60 nm respectively, where metal titanium / gold may represent a stack of titanium and gold.
[0066] In operation S420 , an aluminum gallium oxide thin film is grown on an upper portion of the gallium oxide single crystal substrate.
[0067] The aluminum gallium oxide thin film includes a plurality of photosensitive layers with different aluminum component contents.
[0068] like Figure 5 As shown in FIG, after the back electrode 2 is formed, an aluminum gallium oxide thin film 3 is grown on the upper portion of the gallium oxide single crystal substrate 1.
[0069] In one embodiment, multiple photosensitive layers with different aluminum content are gradually grown by a metal-organic chemical vapor deposition (MOCVD) method.
[0070] The content of aluminum components in the photosensitive layer can be controlled by adjusting the ratio of the aluminum source to the gallium source.
[0071] According to the embodiments of the present disclosure, the aluminum gallium oxide film 3 is grown by one of the following methods: metal organic chemical vapor deposition, radio frequency magnetron sputtering, MBE (Molecular Beam Epitaxy), ALD (Atomic Layer Deposition), HVPE (Hydride Vapor Phase Epitaxy), and mist-CVD (Mist Chemical Vapor Deposition). The method for controlling the aluminum content in the photosensitive layer varies depending on the film growth method.
[0072] In operation S430 , an electrode is formed on an upper portion of the aluminum gallium oxyoxide thin film.
[0073] like Figure 5 As shown in FIG, an electrode 4 is formed on the upper portion of the aluminum gallium oxide thin film 3, thereby completing the preparation of the gallium oxide solar-blind photodetector.
[0074] In one embodiment, the material of the electrode 4 may include at least one of the following: Ti, Ni, Al, Cu, and Au.
[0075] The electrode 4 may include at least one metal layer.
[0076] In one embodiment, standard photolithography and electron beam evaporation processes may be used to grow metal titanium / gold as the electrode 4 , with thicknesses of 40 nm and 60 nm, respectively.
[0077] According to the embodiments of the present disclosure, by preparing multiple layers of photosensitive layers with different aluminum component contents, the prepared gallium oxide solar-blind photodetector can absorb light of different wavelengths through different photosensitive layers with different bandgap widths, thereby allowing different photosensitive layers to play their respective roles to achieve wide-spectrum detection, thereby increasing the spectral response range of the gallium oxide solar-blind photodetector and alleviating the problem of the narrow spectral response range of current single gallium oxide material devices.
[0078] Figure 6 The figure schematically shows a preparation process diagram of a gallium oxide solar-blind photodetector according to another embodiment of the present disclosure.
[0079] like Figure 6 As shown in , when the conductivity of the AlGaO film 3 is very poor, an AlGaO film 5 containing doped elements can be grown on the AlGaO film 3 , and an electrode 4 can be formed on the AlGaO film 5 containing doped elements. Figure 6Other process diagrams and Figure 5 The same is true in Chinese, so I will not repeat it here.
[0080] In one embodiment, a silicon-doped aluminum gallium oxide thin film is grown by metal organic chemical vapor deposition.
[0081] According to an embodiment of the present disclosure, the growth method of the gallium oxide film 5 containing doped elements includes but is not limited to one of the following: metal organic chemical vapor deposition, radio frequency magnetron sputtering, molecular beam epitaxy, atomic layer deposition, hydride vapor phase epitaxy, and atomized chemical vapor deposition.
[0082] Figures 1 to 3 as well as Figure 5~Figure 6 The structures and shapes of the various layers of the gallium oxide solar-blind photodetector shown in the figure are examples only.
[0083] The embodiments of the present disclosure further provide a spectral detection method, which includes utilizing multiple photosensitive layers in a gallium oxide solar-blind photodetector to absorb and detect light of wavelengths corresponding to the photosensitive layers, thereby achieving spectral detection of light of different wavelengths.
[0084] According to an embodiment of the present disclosure, when performing spectral detection, based on a gallium oxide solar-blind photodetector, different photosensitive layers with different band gap widths are used to absorb light of different wavelengths, so that different photosensitive layers can play their respective roles to achieve wide-spectrum detection.
[0085] Therefore, the present invention adopts a method in which multiple photosensitive layers play their respective roles to realize a vertical wide-spectrum gallium oxide solar-blind photodetector, which alleviates the problems of single gallium oxide material solar-blind photoelectric devices such as poor response to solar-blind light in other bands and incomplete signal response, and broadens the application range of gallium oxide photoelectric devices.
[0086] Those skilled in the art will appreciate that the features described in the various embodiments of the present disclosure may be combined and / or coupled in various ways, even if such combinations or couplings are not explicitly described in the present disclosure. In particular, the features described in the various embodiments of the present disclosure may be combined and / or coupled in various ways without departing from the spirit and teachings of the present disclosure. All such combinations and / or couplings fall within the scope of the present disclosure.
[0087] The above describes the embodiments of the present disclosure. However, these embodiments are for illustrative purposes only and are not intended to limit the scope of the present disclosure. Although each embodiment has been described separately above, this does not mean that the measures in each embodiment cannot be advantageously used in combination. Without departing from the scope of the present disclosure, those skilled in the art may make various substitutions and modifications, which should all fall within the scope of the present disclosure.
Claims
1. A gallium oxide solar-blind photodetector, characterized in that: include: Gallium oxide single crystal substrate; A back electrode disposed at the bottom of the gallium oxide single crystal substrate; an aluminum gallium oxide thin film disposed on the gallium oxide single crystal substrate, wherein the aluminum gallium oxide thin film includes a plurality of photosensitive layers having different aluminum component contents, the plurality of photosensitive layers having different band gaps, and the photosensitive layers are configured to absorb and detect light wavelengths corresponding to the band gaps; An electrode is provided on the upper portion of the aluminum gallium oxide film.
2. The gallium oxide solar-blind photodetector according to claim 1, characterized in that: Also includes: An aluminum gallium oxide film containing doped elements is arranged on the upper portion of the aluminum gallium oxide film, and the electrode is arranged on the upper portion of the aluminum gallium oxide film containing doped elements.
3. The gallium oxide solar-blind photodetector according to claim 2, characterized in that: The aluminum gallium oxide film containing doped elements forms an ohmic contact with the electrode to improve the conductivity between the aluminum gallium oxide film containing doped elements and the electrode.
4. The gallium oxide solar-blind photodetector according to claim 2, characterized in that: The content of the aluminum component in the aluminum gallium oxide thin film containing doping elements is higher than the content of the aluminum component in each of the photosensitive layers.
5. The gallium oxide solar-blind photodetector according to claim 1, characterized in that: The thickness of the back electrode is 1-2000 nm, and the thickness of the electrode is 1-2000 nm.
6. The gallium oxide solar-blind photodetector according to claim 1, characterized in that: The thickness of the aluminum gallium oxide film is 20 nm to 2 μm; the number of photosensitive layers in the aluminum gallium oxide film is 1 to 20.
7. A method for preparing a gallium oxide solar-blind photodetector, characterized in that: The preparation method comprises: forming a back electrode on a lower portion of the gallium oxide single crystal substrate; Growing an aluminum gallium oxide thin film on the upper portion of the gallium oxide single crystal substrate, wherein the aluminum gallium oxide thin film includes a plurality of photosensitive layers having different aluminum component contents; An electrode is formed on the upper portion of the aluminum gallium oxyoxide thin film.
8. The preparation method according to claim 7, characterized in that The preparation method further comprises: growing an aluminum gallium oxide thin film containing doping elements on the upper portion of the aluminum gallium oxide thin film; The electrode is formed on the upper portion of the aluminum gallium oxyoxide thin film containing doping elements.
9. The preparation method according to claim 7, characterized in that The preparation method further comprises: After forming a mask layer on the upper portion of the gallium oxide single crystal substrate and forming the back electrode on the lower portion of the gallium oxide single crystal substrate, the mask layer is removed.
10. A spectrum detection method, characterized in that: Using the gallium oxide solar-blind photodetector according to any one of claims 1 to 6, the method comprises: The multiple photosensitive layers in the gallium oxide solar-blind photodetector are used to absorb and detect light of wavelengths corresponding to the photosensitive layers respectively, so as to realize spectral detection of light of different wavelengths.