Remote plasma photoresist removing uniformity measuring system and measuring method thereof

Abstract

The invention relates to a remote plasma photoresist removing uniformity measurement system and a measurement method thereof. The measurement method comprises the following steps: arranging a remote plasma photoresist removing structure on a wafer to generate plasma; a Langmuir probe is arranged in the remote plasma photoresist removing structure, so that the density of generated plasmas is distributed in the radial direction; setting a treatment process of the remote plasma photoresist removing structure, starting parameter measurement, and respectively measuring the electron density of the plasma on a plurality of point positions distributed in the radial direction; acquiring a plasma non-uniform factor according to the measured electron density of the plasma; and judging the remote plasma photoresist removing uniformity according to the plasma non-uniform factor. The Langmuir probe extends into the reaction cavity of the remote plasma photoresist removing structure, so that the radial uniformity of the remote plasma can be detected in situ, the repeatability is good, the cost is low, the operation is easy, important data support is provided for subsequent process optimization and research, meanwhile, the influence on the sample effect in the treatment process can be reduced, and the detection accuracy is improved. And the treatment process effect is optimized.

Description

Technical Field

[0001] The present invention relates to the technical field of plasma debonding, and in particular to a remote plasma debonding uniformity measurement system and a measurement method thereof. Background Art

[0002] Remote plasma is widely used in photoresist removal. Compared with in-situ plasma, remote plasma separates the plasma discharge domain from the photoresist removal reaction domain through a spray plate structure. This remote photoresist removal technology can ensure that the particles reaching the wafer surface are mainly excited active particles, and participate in the main photoresist removal process through chemical reactions, while minimizing the charging damage caused by ion etching and reducing ultraviolet radiation.

[0003] For remote plasma stripping uniformity measurement methods, most existing measurement technologies use non-in-situ measurement methods to measure the physical parameters of wafers before and after processing. However, non-in-situ technologies often waste a large number of test samples and take a long test cycle, and also require independent detection equipment for analysis.

[0004] In general, the existing technology mainly uses probes to detect the radial uniformity of plasma in situ, but there are fewer ways to detect the plasma uniformity in the reaction chamber of a remote plasma degumming machine, and non-situ detection methods are often expensive and time-consuming. Summary of the Invention

[0005] In response to the problems existing in the prior art, the purpose of the present invention is to provide a remote plasma degumming uniformity measurement system and a measurement method thereof, which can detect the radial uniformity of remote plasma in situ, and has good repeatability, low cost, and easy operation. At the same time, it reduces the impact on the sample effect during the treatment process and optimizes the treatment process effect.

[0006] In order to achieve the above object, the present invention adopts the following technical solutions:

[0007] A remote plasma debonding uniformity measurement method, comprising:

[0008] A remote plasma stripping structure is provided on the wafer to generate plasma;

[0009] A Langmuir probe is arranged in the remote plasma stripping structure to make the generated plasma density distributed radially;

[0010] Set up a remote plasma stripping structure treatment process, start parameter measurement, and measure the electron density of the plasma at multiple radially distributed points;

[0011] Obtaining a plasma non-uniformity factor according to the measured electron density of the plasma;

[0012] The uniformity of remote plasma stripping is determined based on the plasma non-uniformity factor.

[0013] Furthermore, the plasma stripping structure includes a base, an inductive coil, a spray plate, an electrostatic chuck and a radio frequency bias power supply;

[0014] An inductive coil is placed above the wafer to generate a remote plasma source;

[0015] The spray plate is placed between the inductor coil and the wafer to reduce damage from charged particles and provide uniform plasma to the wafer;

[0016] The Langmuir probe is located above the electrostatic chuck at a radial position passing through the center of the wafer to radially distribute the plasma density and measure the electron density of the plasma.

[0017] The electrostatic chuck is located on the base and is used to fix the wafer and absorb ion energy to stabilize the ion motion state and energy distribution;

[0018] An RF bias power supply is applied to the pedestal to control the energy of the ions reaching the electrostatic chuck.

[0019] Furthermore, the treatment process is set to include:

[0020] The O2 and N2 gas mixture is excited into a plasma state, with N2 accounting for 10% and O2 accounting for 90% in the mixed gas. The total gas flow rate is 500-2000sccm, the pressure is 1.1torr, and the base heating plate temperature is 100℃;

[0021] The remote plasma source is an inductively coupled plasma connected to a 13.5 MHz radio frequency power supply;

[0022] Connect the base to a 13.5MHz RF bias power supply with a power of 500-2000W.

[0023] Further, obtaining the plasma non-uniformity factor includes,

[0024] Obtain the maximum electron density, minimum electron density and average electron density in the radial measurement point data set;

[0025] The plasma non-uniformity factor is calculated using the following formula (1):

[0026] μ= (n e,max -n e,min ) / 2×n e,mean (1)

[0027] Where μ is the plasma non-uniformity factor, n e,max 、n e,min and n e,meanThese are the maximum electron density, minimum electron density, and average electron density in the radial measurement point data set.

[0028] Furthermore, after obtaining the plasma non-uniformity factor, the following steps are also included:

[0029] According to the measured plasma non-uniformity factor, the processing process is adjusted accordingly until the measured plasma non-uniformity factor is within the error range.

[0030] Furthermore, the corresponding adjustment of the treatment process includes adjusting the ratio of mixed gas, susceptor heating temperature and pressure in the treatment process:

[0031] When the error between the plasma non-uniformity factor and the preset value exceeds 10%, adjust the proportion of O2 in the O2 and N2 mixed gas until the error does not exceed 10%;

[0032] The optimal temperature is extracted using the following calculation formula (2);

[0033] YY=min(Tt); (2)

[0034] Where YY is the optimal temperature, min is the extraction function of the base heating plate temperature corresponding to the minimum degumming time, and Tt is the degumming time when the base heating plate temperature is t;

[0035] The processing pressure is updated using the following calculation formula (3). If the degumming time is reduced, the processing pressure is continuously updated using the calculation formula (3) until it no longer decreases.

[0036] Q1=1.001×Q0; (3)

[0037] If the degumming time increases, the adjustment is stopped and the process pressure is updated using the following calculation formula (4). If the degumming time decreases, the process pressure is continuously updated using the calculation formula (4) until it stops decreasing.

[0038] Q1=0.999×Q0; (4)

[0039] Wherein, Q1 is the process pressure in the next process, and Q0 is the process pressure in the previous process.

[0040] A remote plasma debonding uniformity measurement system, comprising

[0041] A structure setting module, used for setting a remote plasma stripping structure to generate plasma;

[0042] The system setting module is used to set the Langmuir probe position so that the plasma density generated by the remote plasma debonding structure is distributed radially;

[0043] A processing process setting module is used to set the processing process;

[0044] Wafer setup module, used to setup wafer and start parameter measurement;

[0045] The uniformity analysis module is used to measure the electron density of the plasma at multiple radially distributed points using a Langmuir probe according to the processing process and the wafer settings, and to obtain the plasma non-uniformity factor based on the measured electron density to determine the uniformity of remote plasma stripping.

[0046] Furthermore, an optimization module is included, which is used to adjust the processing technology accordingly according to the plasma non-uniformity factor obtained by the remote plasma degumming uniformity measurement system until the measured plasma non-uniformity factor is within the error range.

[0047] A computer-readable storage medium stores computer program instructions, which implement the above method when executed by a processor.

[0048] An electronic device includes a memory and a processor, wherein the memory stores computer program instructions, wherein the computer program instructions implement the above method when executed by the processor.

[0049] In general, the present invention has the following advantages:

[0050] By extending the Langmuir probe into the reaction chamber of the remote plasma stripping structure, the radial uniformity of the remote plasma can be detected in situ with good repeatability, low cost and easy operation, providing important data support for subsequent process optimization and research. At the same time, it can reduce the impact on sample effects during the treatment process and optimize the treatment process effect. BRIEF DESCRIPTION OF THE DRAWINGS

[0051] Figure 1 The present invention is a flowchart of a remote plasma stripping uniformity measurement method.

[0052] Figure 2 It is a schematic diagram of setting a remote plasma stripping structure according to an embodiment of the present invention.

[0053] Figure 3 This is a flow chart of setting the Langmuir probe position to achieve radial distribution of plasma density according to an embodiment of the present invention.

[0054] Figure 4 It is a schematic diagram of setting the processing process and basic data of an embodiment of the present invention.

[0055] Figure 5 The present invention provides a flowchart for setting wafer startup parameters in a remote plasma stripping uniformity measurement method according to an embodiment of the present invention.

[0056] Figure 6 This is a flow chart of extracting the current plasma non-uniformity factor in a remote plasma stripping uniformity measurement method according to an embodiment of the present invention.

[0057] Figure 7 The present invention is a flowchart of a remote plasma stripping uniformity measurement method according to an online measured plasma non-uniformity factor adjustment process.

[0058] Figure 8 This is a structural diagram of a remote plasma debonding uniformity measurement system according to an embodiment of the present invention.

[0059] Figure 9 It is a structural diagram of an electronic device in an embodiment of the present invention.

[0060] Figure 10 Schematic diagram of the remote plasma stripping structure in an embodiment of the present invention.

[0061] Among them, 1 is the inductor coil, 2 is the spray plate, 3 is the Langmuir probe, 4 is the electrostatic chuck, and 5 is the RF bias power supply. DETAILED DESCRIPTION

[0062] The present invention will be described in further detail below.

[0063] like Figure 1 As shown, a remote plasma stripping uniformity measurement method includes:

[0064] S101, setting a remote plasma stripping structure to generate plasma;

[0065] S102, setting the position of Langmuir probe 3 so that the plasma density is distributed radially;

[0066] S103, setting the processing technology and basic data of the remote plasma stripping structure;

[0067] S104, setting a wafer, starting parameter measurement, and measuring the electron density of the plasma at multiple points distributed radially;

[0068] S105, obtaining a plasma non-uniformity factor according to the measured electron density of the plasma;

[0069] S106. Adjust the mixed gas ratio, susceptor heating temperature, and pressure in the processing process according to the plasma non-uniformity factor measured online until the measured plasma non-uniformity factor is within an error range.

[0070] In the embodiment of the present invention, the core is how to use the Langmuir probe 3 to detect the radial uniformity of remote plasma in situ, characterize the radial uniformity of remote plasma, and dynamically calibrate and verify the entire measurement system before actual application based on the characterization results. Remote plasma is widely used in photoresist removal. Compared with in-situ plasma, remote plasma uses the spray plate 2 structure to separate the plasma discharge domain from the photoresist removal reaction domain. This remote photoresist removal technology can ensure that the particles reaching the wafer surface are mainly excited active particles and participate in the main photoresist removal process through chemical reactions, while greatly reducing the charging damage caused by ion etching and reducing ultraviolet radiation. This includes calibrating the probe using a standard plasma source to ensure the accuracy of its measurement results; at the same time, experimental verification is required under different process conditions and material properties to evaluate the reliability and applicability of the system.

[0071] Figure 2 The present invention is a flowchart of setting a remote plasma stripping structure in a remote plasma stripping uniformity measurement method according to an embodiment of the present invention.

[0072] like Figure 2 As shown, a remote plasma stripping structure is set up, specifically including:

[0073] S201, the structure includes an inductor coil 1, a spray plate 2, a Langmuir probe 3, an electrostatic chuck 4 and a radio frequency bias power supply 5; the inductor coil 1 is used to generate a remote plasma source;

[0074] S202, spray plate 2 is used to reduce the damage of charged particles and provide uniform plasma;

[0075] S203, the Langmuir probe 3 is used to measure the plasma parameters at a radial position 10 mm above the center of the wafer above the electrostatic chuck 4;

[0076] S204, the electrostatic chuck 4 is used to fix the wafer and absorb ion energy to stabilize the motion state and energy distribution of the ions;

[0077] S205 , the RF bias power supply 5 is used to control the energy of ions reaching the electrostatic chuck 4 .

[0078] In the embodiment of the present invention, specifically, a remote plasma source (RPS) is a device for generating plasma, which couples radio frequency power through an electromagnetic coil to dissociate gas into plasma. This plasma is introduced into a vacuum reaction chamber and reacts with the surface of the workpiece to be processed, thereby achieving material removal or surface modification. In semiconductor manufacturing, photoresist is a material used to protect specific areas on silicon wafers, and it needs to be removed in subsequent processes. Traditional debonding methods may cause damage to the wafer surface, while remote plasma technology can more accurately control the reaction process and reduce damage to the wafer. The specific remote plasma debonding structure is shown in FIG. Figure 10 As shown. A remote plasma debonding structure is constructed, and the specific configuration of the structure is as follows. First, an inductor coil 1 is provided, and its function is to generate a remote plasma source. For example, in a specific experimental environment, by inputting a current of a specific frequency and intensity into the inductor coil 1, a magnetic field is generated in the space around it, thereby exciting the gas to generate a remote plasma source. Next, a spray plate 2 is provided, which is mainly used to reduce damage by charged particles and provide uniform plasma. In actual operation, when the remote plasma source is generated, when the plasma passes through the spray plate 2, the unique structure and material of the spray plate 2 can make the plasma more evenly distributed, and reduce the damage to the wafer and the like caused by the excessive concentration or disordered movement of charged particles. In this structure, a Langmuir probe 3 is also arranged, which is set to measure the plasma parameters of the radial position of 10 mm above the center of the wafer above the electrostatic suction cup 4. For example, when the entire degumming system is running, the Langmuir probe 3 measures the current-voltage (IV) relationship between itself and the plasma at the above-mentioned specific position, and performs a first-order differential calculation on the relationship curve to obtain plasma parameters such as electron temperature, electron density, ion density, etc. The electrostatic chuck 4 in this structure has the function of sucking out ion energy. When ions in the plasma approach the electrostatic chuck 4, the electrostatic chuck 4 absorbs part of the energy carried by the ions through its own electrostatic action to stabilize the motion state and energy distribution of the ions. In addition, a radio frequency bias power supply 5 is provided, which is mainly used to control the ion energy arriving at the electrostatic chuck 4. For example, by adjusting the voltage, frequency and other parameters of the radio frequency bias power supply 5, the electric field environment around the electrostatic chuck 4 can be changed, thereby accurately controlling the energy of the ions when they arrive at the electrostatic chuck 4, ensuring the stability and efficiency of the degumming process. Through the above setting and coordinated work of each component, a complete remote plasma degumming structure is formed together.

[0079] Figure 3 The flowchart is for setting the position of the Langmuir probe 3 in a remote plasma stripping uniformity measurement method according to an embodiment of the present invention so as to achieve radial distribution of plasma density.

[0080] like Figure 3As shown, the position of the Langmuir probe 3 is set so that the plasma density is distributed radially, specifically including:

[0081] S301, Langmuir probe 3 is fixed on a two-dimensional movable platform through a sealing flange interface;

[0082] S302, the axial position of the Langmuir probe 3 is fixed 10 mm above the base surface, and the horizontal position passes through the center of the base, where the center of the base is the center of the wafer. The plasma density is distributed radially by adjusting the position coordinates of the Langmuir probe 3.

[0083] In this embodiment of the present invention, to accurately measure the radial distribution of plasma density, the position of the Langmuir probe 3 is configured as follows. First, the Langmuir probe 3 is secured to a two-dimensionally movable platform via a sealing flange interface. This sealing flange interface ensures stable mounting of the Langmuir probe 3 while ensuring relative isolation from the outside world, preventing interference from external impurities or gases during the measurement process. It acts as a special "joint" for the probe, providing both secure fixation and a seal. The two-dimensionally movable platform, like a "trolley" that can freely move on a plane, can move in two perpendicular directions, providing flexibility for adjusting the position of the Langmuir probe 3. Next, the axial position of the Langmuir probe 3 is precisely fixed 10 mm above the surface of the base. This base is the support platform for the wafer, and the axial direction here is perpendicular to the base surface. For example, assuming the base is a table, the Langmuir probe 3 is fixed at a height of 10 mm above the tabletop. Furthermore, its horizontal position is set to pass through the center of the base, which is also the center of the wafer. By adjusting the position of the two-dimensional mobile platform, the coordinates of Langmuir probe 3 are changed. For example, when the platform moves horizontally to one side, Langmuir probe 3 also moves with it, allowing the plasma density to be measured at different radial positions. By continuously adjusting the coordinates of Langmuir probe 3 at different radial positions, we can obtain plasma density data at a series of different locations.

[0084] Figure 4 The present invention is a flowchart of setting processing technology and basic data in a remote plasma debonding uniformity measurement method according to an embodiment of the present invention.

[0085] like Figure 4 As shown, set the processing technology and basic data, including:

[0086] S401, exciting a mixture of O2 and N2 into a plasma state, wherein the proportion of N2 in the mixture of O2 and N2 is 10%, the proportion of O2 is 90%, the total gas flow rate is 500-2000 sccm, the pressure is 1.1 torr, and the temperature of the susceptor heating plate is 100°C;

[0087] S402, the remote plasma source is an inductively coupled plasma connected to a 13.5 MHz radio frequency power supply;

[0088] S403 , connect a 13.5 MHz RF bias power supply 5 to the base, with a power of 500-2000 W.

[0089] In an embodiment of the present invention, a mixed gas of O2 and N2 is first prepared for igniting a plasma state. The O2 and N2 mixed gas here refers to a mixture of oxygen (O2) and nitrogen (N2) in a specific ratio. The N2 ratio is precisely set to 10%, and the O2 ratio is precisely set to 90%. This ratio configuration was determined after multiple experimental verifications and meets specific process requirements. The total gas flow rate of the mixed gas is controlled within the range of 500–2000 sccm (sccm is the abbreviation for standard cubic centimeters per minute, a unit used to measure gas flow rate). For example, the flow rate can be set to 1000 sccm. The gas pressure is set to 1.1 torr (torr is a commonly used unit of pressure). Simultaneously, the temperature of the susceptor heater plate is set to 100°C and is monitored and controlled in real time by a high-precision temperature sensor to ensure temperature stability. Regarding the equipment for igniting the plasma, the remote plasma source used is an inductively coupled plasma connected to a 13.5 MHz radio frequency power supply. The inductively coupled plasma here refers to the use of inductive coupling to provide energy provided by a 13.5MHz radio frequency power supply so that the atoms or molecules in the gas obtain sufficient energy to ionize and form plasma. This plasma generation method has the advantages of high efficiency and stability. In addition, a 13.5MHz radio frequency bias power supply 5 is connected to the base, and the power is set in the range of 500-2000W, for example, the power can be set to 1200W. The function of the radio frequency bias power supply 5 is to generate a specific electric field on the base, thereby regulating the movement and distribution of the plasma to meet specific processing requirements. Through such a setting, the accurate setting of the processing process and basic data is achieved to achieve the expected process effect.

[0090] Figure 5 The present invention is a flowchart of setting a wafer and starting parameter measurement in a remote plasma stripping uniformity measurement method according to an embodiment of the present invention.

[0091] like Figure 5 As shown, set up the wafer and start parameter measurement, including:

[0092] S501, set the wafer diameter to 300mm and the spacing between each point to 30mm;

[0093] S502, turning on the coil RF power supply and the bottom bias power supply;

[0094] S503 , using the Langmuir probe 3 , measure the plasma parameters at a radial position 10 mm past the center of the wafer above the electrostatic chuck 4 , where the measured parameter is electron density, and the number of measurement points is 11.

[0095] In an embodiment of the present invention, wafer setup is first performed. A 300mm diameter wafer is prepared. The wafer in this example is a commonly used semiconductor material carrier with important applications in fields such as semiconductor manufacturing. The spacing between each point on the wafer is set to 30mm. This spacing ensures that the data obtained in subsequent measurements is sufficiently representative and accurate. The relevant power supplies are then activated. The coil RF power supply and the bottom bias power supply are turned on. The coil RF power supply provides energy for plasma generation, while the bottom bias power supply is used to adjust the interaction between the plasma and the wafer. The two work together to maintain a specific plasma environment. Plasma parameter measurements are then performed. This is accomplished using a Langmuir probe 3, a tool used to measure plasma parameters. By placing it in a specific position, plasma-related information can be obtained. Specifically, the Langmuir probe 3 is placed 10mm above the electrostatic chuck 4 and radially past the center of the wafer. The electrostatic chuck 4 is a device used to secure the wafer to ensure its stability during processing. At this position, the plasma's electron density is measured. Electron density is one of the key parameters describing plasma characteristics, reflecting the distribution of electrons in the plasma. In order to fully and accurately obtain the electron density information at this location, the number of measurement points is set to 11. By measuring at these 11 different points, the distribution of electron density at that location can be obtained, providing important data support for subsequent process optimization and research. Through the above series of operations, the wafer setting and plasma parameter determination are achieved.

[0096] Figure 6 The present invention is a flowchart of extracting a current plasma non-uniformity factor in a remote plasma stripping uniformity measurement method according to an embodiment of the present invention.

[0097] like Figure 6 As shown, the current plasma non-uniformity factor is extracted, including:

[0098] S601, obtaining the maximum electron density, the minimum electron density, and the average electron density in the radial measurement point data set;

[0099] S602, calculating the plasma non-uniformity factor using calculation formula (1);

[0100] The calculation formula (1) is:

[0101] μ= (n e,max -ne,min ) / 2×n e,mean (1)

[0102] Where μ is the plasma non-uniformity factor, n e,max 、n e,min and n e,mean These are the maximum electron density, minimum electron density, and average electron density in the radial measurement point data set.

[0103] In the embodiment of the present invention, after completing the above-mentioned measurement of the electron density at 11 points in the radial direction 10 mm from the center of the wafer above the electrostatic chuck 4, a radial measurement point data set is obtained. First, the maximum and minimum values of the electron density are found from the data set, and the average value of the electron density is calculated. For example, suppose that after measurement and data processing, the maximum value of the electron density data at these 11 measurement points is n e,max , the minimum value is n e,min . Calculate the average value n e,mean When the electron density values of these 11 measurement points are added together and then divided by the number of measurement points (11), the average value is assumed. Then, the plasma non-uniformity factor is calculated using formula (1). The current plasma non-uniformity factor is extracted. This factor can intuitively reflect the non-uniformity of the plasma at the radial measurement position, providing an important reference for further research and optimization of plasma-related processes.

[0104] Figure 7 The present invention is a flowchart of adjusting the mixed gas ratio, susceptor heating temperature and pressure in a treatment process according to an online measured plasma non-uniformity factor in a remote plasma stripping uniformity measurement method according to an embodiment of the present invention.

[0105] like Figure 7 As shown, according to the plasma non-uniformity factor measured online, the mixed gas ratio, susceptor heating temperature and pressure in the processing process are adjusted, including:

[0106] S701, online measuring the plasma non-uniformity factor, when the error between the plasma non-uniformity factor and the preset value exceeds 10%, adjusting the proportion of O2 in the O2 and N2 mixed gas until the error does not exceed 10%;

[0107] S702, online extraction of the wafer stripping remaining height and the etching depth after stripping;

[0108] S703, extracting the optimal temperature using calculation formula (2);

[0109] S704, using calculation formula (3) to update the processing pressure. If the desizing time is reduced, continue to use calculation formula (3) to update the processing pressure until it stops reducing.

[0110] S705: If the desizing time increases, stop adjusting and use the calculation formula (4) to update the processing pressure; if it decreases, continue to use the calculation formula (4) to update the processing pressure until it stops decreasing;

[0111] The calculation formula (2) is:

[0112] YY=min(Tt) (2)

[0113] Where YY is the optimal temperature, min is the extraction function of the base heating plate temperature corresponding to the minimum degumming time, and Tt is the degumming time when the base heating plate temperature is t;

[0114] The calculation formula (3) is:

[0115] Q1=1.001×Q0 (3)

[0116] Wherein, Q1 is the process pressure in the next treatment, and Q0 is the process pressure in the previous treatment;

[0117] The calculation formula (4) is:

[0118] Q1=0.999×Q0 (4)

[0119] In an embodiment of the present invention, first, the plasma non-uniformity factor is continuously measured online. A standard value of the plasma non-uniformity factor is preset, for example, set to 0.5. During the real-time measurement process, the measured plasma non-uniformity factor is compared with the preset value. When the error between the measured plasma non-uniformity factor and the preset value exceeds 10%, the O2 ratio in the O2 / N2 mixed gas is adjusted. Assuming that the initial O2 ratio is 90%, each adjustment can be made in a range of 1%. For example, if the measured plasma non-uniformity factor is greater than the preset value by more than 10%, the O2 ratio is appropriately reduced; if it is less than the preset value by more than 10%, the O2 ratio is appropriately increased. The O2 ratio is continuously adjusted and the plasma non-uniformity factor is re-measured until the error between the measured plasma non-uniformity factor and the preset value does not exceed 10%. After completing this step, the wafer stripping residual height and the etching depth after stripping are extracted online. Assuming that the extracted etching depth is 50μm and the preset damage margin is 10μm. Next, the optimal temperature is extracted using calculation formula (2). For different base heating plate temperatures Tt, record the corresponding degumming time. For example, when the base heating plate temperature is 80°C, the degumming time is 30 minutes; when the temperature is 90°C, the degumming time is 25 minutes, etc. By comparing the degumming time at different temperatures, the base heating plate temperature corresponding to the minimum degumming time is extracted using the function min, and this temperature is the optimal temperature YY. In this example, assuming that the temperature corresponding to the minimum degumming time is 95°C, then the optimal temperature YY is 95°C. Then, according to the change in degumming time, the corresponding formula is used to update the processing pressure. Assume that the current processing pressure is Q0 = 1.1 torr. At the beginning, the processing pressure is updated using the calculation formula (3), that is, Q1 = 1.001 × Q0. The processing pressure in the next process is calculated to be Q1 = 1.001 × 1.1 = 1.1011 torr. After each pressure update, the degumming operation is performed and the degumming time is recorded. If the degumming time decreases, the processing pressure is updated continuously using the calculation formula (3). For example, after multiple updates, when the degumming time no longer decreases, the calculation formula (3) is stopped. If the degumming time increases during the pressure update process, the calculation formula (3) is stopped, and the calculation formula (4), i.e., Q1 = 0.999 × Q0, is used to update the processing pressure. For example, the pressure Q0 at this time is the pressure value obtained last time when the degumming time begins to increase using the calculation formula (3), assuming it is 1.15 torr, then according to the calculation formula (4), Q1 = 0.999 × 1.15 = 1.14885 torr is obtained. Then, the degumming operation is continued and the degumming time is recorded. If the degumming time decreases, the calculation formula (4) is continued to update the processing pressure until the degumming time no longer decreases.Through the above series of operations, according to the plasma non-uniformity factor measured online, the mixed gas ratio, base heating temperature and pressure in the treatment process were effectively adjusted to optimize the treatment process effect.

[0120] According to a second aspect of an embodiment of the present invention, a remote plasma stripping uniformity measurement system is provided.

[0121] Figure 8 This is a structural diagram of a remote plasma debonding uniformity measurement system according to an embodiment of the present invention.

[0122] A remote plasma stripping uniformity measurement system includes:

[0123] The structure setting module 801 is used to set the remote plasma stripping structure;

[0124] The system setting module 802 is used to set the position of the Langmuir probe 3 so that the plasma density is distributed radially;

[0125] The processing process setting module 803 is used to set the processing process and basic data;

[0126] The wafer setting module 804 is used to set the wafer and start parameter measurement;

[0127] Uniformity analysis module 805, used to extract the current plasma non-uniformity factor;

[0128] The calibration and optimization module 806 is used to adjust the mixed gas ratio, susceptor heating temperature and pressure in the processing process according to the plasma non-uniformity factor measured online.

[0129] In the embodiment of the present invention, a system applicable to different structures is realized through a series of modular designs. The system can achieve closed-loop, reliable and efficient execution through collection, analysis and control.

[0130] According to a third aspect of an embodiment of the present invention, there is provided a computer-readable storage medium storing computer program instructions, which implement the method according to any one of the first aspects of the embodiment of the present invention when executed by a processor.

[0131] According to a fourth aspect of the embodiments of the present invention, an electronic device is provided. Figure 9 It is a structural diagram of an electronic device in one embodiment of the present invention. Figure 9 The electronics shown are for a universal remote plasma stripping uniformity measurement device. Figure 9 The electronic device may be a smart phone, a tablet computer, or the like. The electronic device 900 includes a processor 901 and a memory 902. The processor 901 is electrically connected to the memory 902.

[0132] The processor 901 is the control center of the electronic device 900. It uses various interfaces and lines to connect various parts of the entire electronic device. By running or calling computer programs stored in the memory 902 and calling data stored in the memory 902, it executes various functions of the electronic device and processes data, thereby monitoring the electronic device as a whole.

[0133] In this embodiment, the processor 901 in the electronic device 900 will load the instructions corresponding to the processes of one or more computer programs into the memory 902 according to the following steps, and the processor 901 will run the computer program stored in the memory 902 to realize various functions, such as: setting the remote plasma stripping structure; setting the position of the Langmuir probe 3 so that the plasma density is radially distributed; setting the processing process and basic data; setting the wafer and starting parameter measurement; extracting the current plasma non-uniformity factor; adjusting the mixed gas ratio, base heating temperature and pressure in the processing process according to the plasma non-uniformity factor measured online.

[0134] In some embodiments, the electronic device 900 may further include a display 903, a radio frequency circuit 904, an audio circuit 905, a Wi-Fi module 906, and a power supply 907. The display 903, the radio frequency circuit 904, the audio circuit 905, the Wi-Fi module 906, and the power supply 907 are electrically connected to the processor 901, respectively.

[0135] The display 903 can be used to display information input by the user or information provided to the user, as well as various graphical user interfaces. These graphical user interfaces can be composed of graphics, text, icons, videos, or any combination thereof. The display 903 may include a display panel. In some embodiments, the display panel can be configured in the form of a liquid crystal display (LCD) or an organic light-emitting diode (OLED).

[0136] The radio frequency circuit 904 can be used to transmit and receive radio frequency signals, so as to establish wireless communication with a network device or other electronic devices through wireless communication, and to transmit and receive signals with the network device or other electronic devices.

[0137] The audio circuit 905 may be configured to provide an audio interface between a user and the electronic device through a speaker and a microphone.

[0138] The Wi-Fi module 906 can be used for short-range wireless transmission, and can help users send and receive emails, browse websites, and access streaming media, etc. It provides users with wireless broadband Internet access.

[0139] The power supply 907 can be used to supply power to various components of the electronic device 900. In some embodiments, the power supply 907 can be logically connected to the processor 901 through a power management system, thereby managing charging, discharging, and power consumption through the power management system.

[0140] although Figure 9 Not shown, the electronic device 900 may also include a camera, a Bluetooth module, etc., which will not be described in detail here.

[0141] The technical solutions provided by the embodiments of the present invention may have the following beneficial effects:

[0142] In the solution of the present invention, by extending the Langmuir probe 3 into the reaction chamber, the radial uniformity of the remote plasma can be detected in situ, and the method has good repeatability, low cost, and easy operation, while reducing the impact on the sample effect during the processing.

[0143] In the solution of the present invention, quantitative characterization is achieved for the uniformity of a remote inductively coupled plasma system containing a bias voltage.

[0144] Those skilled in the art will appreciate that embodiments of the present invention may be provided as methods, systems, or computer program products. Thus, the present invention may take the form of an entirely hardware embodiment, an entirely software embodiment, or an embodiment combining software and hardware. Furthermore, the present invention may take the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to magnetic disk storage and optical storage, etc.) containing computer-usable program code.

[0145] The present invention is described with reference to flowcharts and / or block diagrams of methods, devices (systems), and computer program products according to embodiments of the present invention. It should be understood that each process and / or block in the flowcharts and / or block diagrams, as well as combinations of processes and / or blocks in the flowcharts and / or block diagrams, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing device to produce a machine, so that the instructions executed by the processor of the computer or other programmable data processing device generate instructions for implementing the processes in the flowcharts and / or block diagrams. Figure 1 a process or multiple processes and / or boxes Figure 1 A device that provides the functions specified in a block or multiple blocks.

[0146] These computer program instructions may also be stored in a computer readable memory that can direct a computer or other programmable data processing device to work in a specific manner, so that the instructions stored in the computer readable memory produce an article of manufacture comprising an instruction device, which implements the process Figure 1 a process or multiple processes and / or boxes Figure 1The function specified in one or more boxes.

[0147] These computer program instructions can also be loaded onto a computer or other programmable data processing device so that a series of operational steps are executed on the computer or other programmable device to produce a computer-implemented process, thereby providing the instructions executed on the computer or other programmable device for implementing the process. Figure 1 a process or multiple processes and / or boxes Figure 1 A step that specifies a function in one or more boxes.

[0148] The above embodiments are preferred implementation modes of the present invention, but the implementation modes of the present invention are not limited to the above embodiments. Any other changes, modifications, substitutions, combinations, and simplifications that do not deviate from the spirit and principles of the present invention should be considered as equivalent replacement methods and are included in the scope of protection of the present invention.

Claims

1. A remote plasma stripping uniformity measurement method, characterized by: include A remote plasma stripping structure is provided on the wafer to generate plasma; A Langmuir probe is arranged in the remote plasma stripping structure to make the generated plasma density distributed radially; Set up a remote plasma stripping structure treatment process, start parameter measurement, and measure the electron density of the plasma at multiple radially distributed points; Obtaining a plasma non-uniformity factor according to the measured electron density of the plasma; The uniformity of remote plasma stripping is determined based on the plasma non-uniformity factor.

2. The measuring method according to claim 1, wherein: The plasma debonding structure includes a base, an inductive coil, a spray plate, an electrostatic chuck and a radio frequency bias power supply; An inductive coil is placed above the wafer to generate a remote plasma source; The spray plate is placed between the inductor coil and the wafer to reduce damage from charged particles and provide uniform plasma to the wafer; The Langmuir probe is located above the electrostatic chuck at a radial position passing through the center of the wafer to radially distribute the plasma density and measure the electron density of the plasma. The electrostatic chuck is installed on the base to fix the wafer and absorb ion energy to stabilize the ion motion state and energy distribution; An RF bias power supply is applied to the pedestal to control the energy of the ions reaching the electrostatic chuck.

3. The measuring method according to claim 2, wherein: Setting up the treatment process includes: The O2 and N2 gas mixture is excited into a plasma state, with N2 accounting for 10% and O2 accounting for 90% in the mixed gas. The total gas flow rate is 500-2000sccm, the pressure is 1.1torr, and the base heating plate temperature is 100℃; The remote plasma source is an inductively coupled plasma connected to a 13.5 MHz radio frequency power supply; Connect the base to a 13.5MHz RF bias power supply with a power of 500-2000W.

4. The measuring method according to claim 1, wherein: Obtaining plasma non-uniformity factors includes, Obtain the maximum electron density, minimum electron density and average electron density in the radial measurement point data set; The plasma non-uniformity factor is calculated using the following formula (1): μ= (n e,max -n e,min ) / 2×n e,mean (1) Where μ is the plasma non-uniformity factor, n e,max 、n e,min and n e,mean These are the maximum electron density, minimum electron density, and average electron density in the radial measurement point data set.

5. The measurement method according to claim 3, wherein: After obtaining the plasma non-uniformity factor, the following steps are also included: According to the measured plasma non-uniformity factor, the processing process is adjusted accordingly until the measured plasma non-uniformity factor is within the error range.

6. The measuring method according to claim 5, wherein: Adjusting the treatment process accordingly includes adjusting the mixed gas ratio, susceptor heating temperature and pressure in the treatment process: When the error between the plasma non-uniformity factor and the preset value exceeds 10%, adjust the proportion of O2 in the O2 and N2 mixed gas until the error does not exceed 10%; The optimal temperature is extracted using the following calculation formula (2); YY=min(Tt); (2) Where YY is the optimal temperature, min is the extraction function of the base heating plate temperature corresponding to the minimum degumming time, and Tt is the degumming time when the base heating plate temperature is t; The processing pressure is updated using the following calculation formula (3). If the degumming time is reduced, the processing pressure is continuously updated using the calculation formula (3) until it no longer decreases. Q1=1.001×Q0; (3) If the degumming time increases, the adjustment is stopped and the process pressure is updated using the following calculation formula (4). If the degumming time decreases, the process pressure is continuously updated using the calculation formula (4) until it stops decreasing. Q1=0.999×Q0; (4) Wherein, Q1 is the process pressure in the next process, and Q0 is the process pressure in the previous process.

7. A remote plasma debonding uniformity measurement system, characterized in that: include A structure setting module, used for setting a remote plasma stripping structure to generate plasma; The system setting module is used to set the Langmuir probe position so that the plasma density generated by the remote plasma debonding structure is distributed radially; A processing process setting module is used to set the processing process; Wafer setup module, used to setup wafer and start parameter measurement; The uniformity analysis module is used to measure the electron density of the plasma at multiple radially distributed points using a Langmuir probe according to the processing process and the wafer settings, and to obtain the plasma non-uniformity factor based on the measured electron density to determine the uniformity of remote plasma stripping.

8. The measurement system according to claim 7, characterized in that: The system also includes an optimization module for adjusting the processing process accordingly according to the plasma non-uniformity factor obtained by the remote plasma debonding uniformity measurement system until the measured plasma non-uniformity factor is within an error range.

9. A computer-readable storage medium storing computer program instructions, characterized in that: The computer program instructions implement the method according to any one of claims 1 to 6 when executed by a processor.

10. An electronic device comprising a memory and a processor, characterized in that: The memory stores computer program instructions, wherein when the computer program instructions are executed by the processor, the method according to any one of claims 1 to 6 is implemented.

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