12-inch wafer matte damaged layer repairing method

Abstract

The invention relates to the technical field of semiconductor manufacturing, in particular to a 12-inch wafer matte damaged layer repairing method, which comprises the step of carrying out repairing treatment on the surface of a wafer by adopting multi-stage energy regulation and control type surface repairing equipment, and the equipment comprises a rotary bearing platform, a multi-stage energy injection assembly and a rectification module. By accurately controlling the energy density and the action time of the flow beam, a matte damaged layer on the surface of the wafer is effectively removed, and meanwhile secondary damage is avoided. Embodiments show that the method can reduce the wafer surface roughness from the initial 50-60 nm to below 5 nm, significantly improve the wafer regeneration quality and efficiency, and meet the actual production requirements. According to the invention, efficient and accurate repair can be realized, and reliable technical support is provided for wafer reutilization.

Description

Technical Field

[0001] The present invention belongs to the field of semiconductor manufacturing technology, and specifically relates to a method for repairing a damaged layer on a matte surface of a 12-inch wafer. Background Art

[0002] In the field of 12-inch wafer regeneration, because wafers may experience complex conditions such as high temperatures and etching during processes like diffusion and coating, their surfaces are prone to forming a matte damage layer due to mechanical, thermal, and chemical effects. This damage layer not only affects the surface quality of the wafer but can also adversely affect subsequent processing. Therefore, repairing technologies for this matte damage layer on wafer surfaces has become a key research area.

[0003] After searching, a method for cleaning wafer surface contaminants using two-phase flow atomization was disclosed with publication number CN106856161B, and the publication date was December 13, 2019. This patent optimizes the two-phase flow atomization cleaning process and reasonably selects the cleaning conditions to achieve efficient removal of particulate contaminants on the wafer surface while avoiding damage to the graphic structure on the wafer surface. However, this technical solution is mainly aimed at the cleaning of particulate contaminants, and does not involve the repair of the matte damage layer on the wafer surface caused by mechanical or etching reasons. In addition, although this method has a certain description of the energy control of the atomized particles, it does not fully consider the depth characteristics of the matte damage layer and its repair requirements, so there are certain limitations in achieving accurate repair of the matte damage layer.

[0004] After searching, a two-phase flow atomization jet cleaning device and cleaning method with the publication number CN105413905B was disclosed, and the publication date was December 18, 2018. This patent forms ultra-fine atomized droplets with uniform and adjustable particle size through the design of multi-channel liquid diversion pipelines and air outlet mesh plates, thereby effectively reducing the size and energy of the atomized particles and avoiding damage to the graphic structure on the wafer surface. Although this technical solution can improve the cleaning quality and efficiency, its core goal is still focused on the removal of surface contaminants, and does not repair the matte damage layer formed on the wafer surface due to mechanical or etching reasons. In addition, the solution lacks a specific process design for the deep repair of the matte damage layer, and has certain deficiencies in meeting the special needs of repairing the wafer surface damage layer.

[0005] The above problems show that the existing wafer surface treatment technology performs well in cleaning particulate contaminants, but still has obvious deficiencies in repairing the matte damage layer on the wafer surface caused by mechanical or etching reasons. Especially in the field of 12-inch wafer regeneration, the existing technology fails to fully consider the depth characteristics of the matte damage layer and its repair mechanism, resulting in limited repair effect. Therefore, the present invention provides a method for repairing the matte damage layer on a 12-inch wafer, which aims to achieve precise repair of the matte damage layer on the wafer surface by optimizing the repair process parameters and targeted design of the repair process, thereby improving the quality and efficiency of wafer regeneration and meeting the actual needs of the 12-inch wafer regeneration field. Summary of the Invention

[0006] The object of the present invention is to provide a method for repairing a damaged layer on a matte surface of a 12-inch wafer, so as to solve the problems raised in the above-mentioned background technology.

[0007] To achieve the above-mentioned objectives, the present invention provides the following technical solutions: a method for repairing the matte damaged layer of a 12-inch wafer, comprising the following steps: using a multi-stage energy-regulated surface repair device to repair the matte damaged layer on the wafer surface, wherein the multi-stage energy-regulated surface repair device includes a rotating supporting platform, a multi-stage energy injection assembly, and a rectification module for dynamically rectifying the injection beam.

[0008] Preferably, the multi-stage energy spray assembly includes an outer cylinder, an inner nozzle structure, a graded adjustment component, a liquid inlet pipe, a tapered nozzle head, a safety exhaust valve, and an air path control group, the upper end of the outer cylinder is installed with a top cover by a threaded connection, the lower end of the outer cylinder is set as an inverted conical base, the center of the base is provided with a bottom through hole, the center of the top cover is provided with a top through hole, and the top cover is also provided with two auxiliary through holes located on the left and right sides of the top through hole and two air path through holes located on the front and back sides of the top through hole, one end of the safety exhaust valve is connected to the auxiliary through hole, and one end of the air path control group is connected to the air path through hole; the inner nozzle structure is composed of a flexible liquid inlet pipe, a rigid conduit, an elastic transition pipe, and a gradually expanding nozzle section from top to bottom, the lower end of the liquid inlet pipe is sealed with the upper end of the flexible liquid inlet pipe by a clamp, the lower end of the gradually expanding nozzle section is threadedly connected to the upper end of the tapered nozzle head, and the elastic transition pipe The inner wall of the tapered nozzle is a hyperbolic structure, the expansion angle of the gradually expanding nozzle section is greater than the contraction angle of the tapered nozzle head, the inner diameter of the outlet end of the tapered nozzle head is smaller than the inner diameter of the inlet end, and the inner diameter of the outlet end of the gradually expanding nozzle section is smaller than the inner diameter of the inlet end; the upper end of the liquid inlet pipe is arranged above the outer cylinder, the flexible liquid inlet pipe, the rigid conduit, and the elastic transition pipe are all arranged inside the outer cylinder, and the lower end of the tapered nozzle head is arranged below the outer cylinder, a pressure chamber is formed between the inner nozzle structure and the outer cylinder, and the interior of the inner nozzle structure is arranged as a layered flow channel; the graded adjustment component includes an annular magnet fixedly installed inside the rigid conduit, a coil compression spring, and a hollow sealing ball for staged blocking of the outlet end of the gradually expanding nozzle section, the upper end of the coil compression spring is fixed to the annular magnet by welding, and the lower end of the coil compression spring is connected to the hollow sealing ball by a thread; a flow control valve group is provided at the liquid inlet pipe.

[0009] Preferably, the rectifier module includes a diverter head located between the tapered nozzle head and the rotating supporting platform, a Z-shaped metal rod, a baffle fixedly mounted at the end of the metal rod, a linear motor for driving the metal rod to perform reciprocating linear motion in the horizontal direction, and a limiting device for limiting the movable range of the baffle. The diverter head includes a semi-ellipsoidal base, and the top of the base is configured as a truncated cone-shaped diverter head; the upper end of the metal rod is fixedly connected to the bottom of the base by bolts, and the output shaft of the linear motor is connected to the baffle by screws; the limiting device includes a roller, and a plurality of limit blocks for blocking the baffle are fixedly mounted on the wheel surface of the roller, and adjacent limit blocks are staggered.

[0010] Preferably, the cone angle of the frustum-shaped diverter is β, and 45°≤β<75°.

[0011] Preferably, when the pressure difference between the inside and outside of the flexible liquid inlet pipe reaches equilibrium, the curve obtained by intercepting the outer wall of the flexible liquid inlet pipe by the axial section of the flexible liquid inlet pipe is a hyperbolic structure, and the curve obtained by intercepting the inner wall of the flexible liquid inlet pipe (7) by the axial section of the flexible liquid inlet pipe is a hyperbolic structure.

[0012] Preferably, the liquid inlet pipeline is connected to a corrosion-resistant constant flow pump, the air circuit control group is connected to an air compressor, the air circuit control group is composed of a one-way valve and a solenoid valve in series, and the flow control valve group is composed of a solenoid valve and a check valve in series.

[0013] Preferably, the hollow sealing ball includes a hemispherical hollow shell and a truncated cone-shaped hollow portion, the cone angle of the truncated cone-shaped hollow portion is 60°, and the tip of the truncated cone-shaped hollow portion is connected to the lower end of the helical compression spring via a thread.

[0014] Preferably, when a multi-stage energy regulation surface repair device is used to repair the matte damage layer on the wafer surface, the wafer to be repaired is placed on a rotating carrier platform, the speed of the rotating carrier platform is set to 800r / min to 900r / min, and a corrosion-resistant constant flow pump is used to transport the repair liquid to the liquid inlet pipe. The air circuit control group is externally connected to an air compressor, and the repair liquid enters the layered flow channel through the liquid inlet pipe, and finally a multi-stage energy regulation beam is ejected from the tapered nozzle head. The multi-stage energy regulation beam changes its energy density at a frequency of 10Hz, and the amplitude of the energy density change is 0.5W / cm 2 In the above figures, the pressure of the fluid in the liquid inlet pipe is 0.2 MPa; the rotation speed of the roller is 15 r / min; and the repair process is completed after 120 s.

[0015] Preferably, the rotation speed of the rotating bearing platform is set to 800r / min, the pressure of the repair fluid passing through the liquid inlet pipe is 0.2MPa, and the energy density change amplitude of the multi-level energy control beam is 0.5W / cm 2 The repair process lasts for 120 seconds.

[0016] Compared with the existing technology, the beneficial effects of the present invention are: the 12-inch wafer matte damage layer repair method can effectively remove the matte damage layer formed on the wafer surface due to mechanical or etching effects by precisely controlling the energy density and action time of the multi-level energy control beam, while avoiding secondary damage to the graphic structure on the wafer surface. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 Schematic diagram of the overall structure of the multi-level energy control surface repair equipment of the present invention;

[0018] Figure 2 It is a schematic diagram of the cross-sectional structure of a multi-stage energy injection component;

[0019] Figure 3 It is a structural diagram of the rectifier module;

[0020] Figure 4 Schematic diagram of the cross-sectional curve of the flexible liquid inlet pipe when the internal and external pressure differences are balanced;

[0021] Figure 5 4 is a flowchart of the method of the present invention.

[0022] In the figure: 1. Rotating bearing platform; 2. Multi-stage energy injection assembly; 3. Rectifier module; 4. Outer cylinder; 5. Inner nozzle structure; 6. Tapered nozzle head; 7. Flexible liquid inlet pipe; 8. Rigid conduit; 9. Elastic transition pipe; 10. Diverter head; 11. Baffle; 12. Limit block. DETAILED DESCRIPTION

[0023] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0024] The present invention provides a method for repairing the matte damaged layer on a 12-inch wafer. The core of the method is to repair the matte damaged layer on the wafer surface using a multi-stage energy-controlled surface repair device. The following describes the specific implementation of the present invention in detail with reference to the accompanying drawings and specific examples.

[0025] like Figure 1 As shown, the multi-stage energy-regulated surface repair equipment includes a rotating carrier platform 1, a multi-stage energy injection assembly 2 and a rectification module 3. The rotating carrier platform 1 is used to place the wafer to be repaired. Its structure is a horizontal rotating disk, which is driven by a motor to realize the rotation function. The multi-stage energy injection assembly 2 is installed above the rotating carrier platform 1, and is used to spray the repair liquid onto the wafer surface and form a multi-stage energy-regulated beam. The rectification module 3 is located below the multi-stage energy injection assembly 2 and is close to the rotating carrier platform 1. It is used to dynamically rectify the spray beam to ensure that the beam is evenly distributed.

[0026] The specific structure of the multi-stage energy injection component 2 is as follows Figure 2As shown, it includes an outer cylinder 4, an inner nozzle structure 5, a graded adjustment component and related auxiliary components. The outer cylinder 4 is a cylindrical structure, with a top cover installed on its upper end through a threaded connection, and the lower end is set as an inverted cone base. A bottom through hole is provided in the center of the base, and a top through hole is provided in the center of the top cover. At the same time, two auxiliary through holes are provided on the left and right sides of the top through hole and two air path through holes are provided on the top cover, respectively. The auxiliary through holes are connected to the safety exhaust valve, and the air path through holes are connected to the air path control group. The inner nozzle structure 5 is composed of a flexible liquid inlet pipe 7, a rigid conduit 8, an elastic transition pipe 9 and a gradually expanding nozzle section from top to bottom. The upper end of the flexible liquid inlet pipe 7 is sealed and connected to the cylindrical liquid inlet pipe by a clamp, and the lower end of the gradually expanding nozzle section is connected to the tapered nozzle head 6 by a thread. The inner wall of the elastic transition tube 9 is a hyperbolic structure. The expansion angle of the diverging nozzle section is greater than the contraction angle of the converging nozzle head 6. The inner diameter of the outlet end of the converging nozzle head 6 is smaller than that of the inlet end, and the inner diameter of the outlet end of the diverging nozzle section is also smaller than that of the inlet end. The upper end of the liquid inlet pipe is positioned above the outer cylinder 4. The flexible liquid inlet pipe 7, rigid conduit 8, and elastic transition tube 9 are all positioned within the outer cylinder 4. The lower end of the converging nozzle head 6 is positioned below the outer cylinder 4. A pressure chamber is formed between the inner nozzle structure 5 and the outer cylinder 4, and the interior of the inner nozzle structure 5 is configured as a layered flow channel.

[0027] The graded adjustment assembly includes an annular magnet, a helical compression spring, and a hollow sealing ball fixedly mounted inside the rigid conduit 8. The annular magnet is welded to the inner wall of the rigid conduit 8. The upper end of the helical compression spring is welded to the annular magnet, while the lower end is threadedly connected to the hollow sealing ball. The hollow sealing ball includes a hemispherical hollow shell and a truncated cone-shaped hollow portion. The cone angle of the truncated cone-shaped hollow portion is 60°, and its tip is threadedly connected to the lower end of the helical compression spring. A flow control valve group is provided at the liquid inlet pipe. The flow control valve group consists of a solenoid valve and a check valve connected in series.

[0028] The specific structure of the rectifier module 3 is as follows Figure 3 As shown, it includes a diverter 10, a Z-shaped metal rod, a baffle 11 and a limiting device. The diverter 10 includes a semi-ellipsoidal base, the top of the base is set as a truncated cone-shaped diverter, and the cone angle β of the truncated cone-shaped diverter satisfies 45°≤β<75°. The metal rod is a Z-shaped structure, the upper end of which is fixedly connected to the bottom of the base of the diverter 10 by bolts, and the lower end is connected to the baffle 11 by screws. The linear motor drives the metal rod to perform reciprocating linear motion in the horizontal direction, thereby driving the baffle 11 to move. The limiting device includes a roller, and a plurality of limiting blocks 12 are fixedly installed on the wheel surface of the roller. The adjacent limiting blocks 12 are staggered and arranged to limit the range of motion of the baffle 11.

[0029] The cross-sectional curve of the flexible liquid inlet pipe 7 when the internal and external pressure difference reaches equilibrium is as follows: Figure 4As shown, the curve obtained by cutting the outer wall of the flexible liquid inlet pipe 7 by the axial section is a hyperbolic structure, and the inner wall is also a hyperbolic structure. This design enables the flexible liquid inlet pipe 7 to maintain stable fluid transmission performance under high pressure environment.

[0030] During the actual operation, the wafer to be repaired is first placed on the rotating carrier platform 1, and the rotation speed of the rotating carrier platform 1 is set to between 800r / min and 900r / min. Then the corrosion-resistant constant flow pump is started to transport the repair liquid to the flexible liquid inlet pipe 7 through the liquid inlet pipe. After the repair liquid passes through the flexible liquid inlet pipe 7, the rigid conduit 8, the elastic transition pipe 9 and the gradually expanding nozzle section, it is finally ejected from the gradually converging nozzle head 6 to form a multi-stage energy-regulated flow beam. The air compressor provides a stable airflow to the pressure chamber through the air path control group, and the air path control group is composed of a one-way valve and a solenoid valve in series. The energy density of the multi-stage energy-regulated flow beam changes at a frequency of 10Hz, and the amplitude of the energy density change is 0.5W / cm 2 The pressure of the fluid in the liquid inlet pipe is 0.2 MPa. The roller rotates at a speed of 15 r / min. The baffle 11, driven by a linear motor, reciprocates horizontally. Limiters 12 restrict the range of motion of the baffle 11 to ensure the stability of the jet. After 120 seconds of repair, the matte damage layer on the wafer surface is completely removed, and the surface roughness is significantly reduced.

[0031] Figure 5 The flowchart of the method of the present invention is shown, and the specific steps are as follows: placing the wafer to be repaired on the rotating carrier platform 1 and setting the rotation speed; starting the corrosion-resistant constant flow pump to transport the repair liquid to the stratified flow channel through the liquid inlet pipe; the air compressor provides a stable airflow to the pressure chamber through the air path control group; the multi-stage energy-regulated beam is ejected from the tapered nozzle head 6 to set the frequency to change the energy density; the rectifier module 3 dynamically rectifies the spray beam to ensure uniform distribution of the beam; the repair process stops after the set time, and the wafer is taken out and the surface roughness is tested.

[0032] Example 1

[0033] During the repair process, the speed of the rotating carrier platform is set at 800r / min. The corrosion-resistant constant flow pump delivers the repair fluid to the liquid inlet pipe at a pressure of 0.2MPa. The air compressor provides a stable airflow to the pressure chamber through the air path control group. The multi-stage energy control flow changes the energy density at a frequency of 10Hz, and the amplitude of the energy density change is 0.5W / cm 2 ,After 120s of repair treatment, the matte damage layer on the wafer surface was ,completely removed, and the surface roughness was reduced from the initial 50nm ,to below 5nm.

[0034] Example 2

[0035] During the repair process, the speed of the rotating platform is set at 900 r / min. The corrosion-resistant constant flow pump delivers the repair fluid to the liquid inlet pipe at a pressure of 0.22 MPa. The air compressor provides a stable airflow to the pressure chamber through the air path control group. The multi-stage energy control flow changes the energy density at a frequency of 10 Hz, and the amplitude of the energy density change is 0.6 W / cm 2 ,After 110s of repair treatment, the matte damage layer on the wafer surface was ,completely removed, and the surface roughness was reduced from the initial 60nm ,to below 4nm.

[0036] Example 3

[0037] During the repair process, the speed of the rotating carrier platform is set to 750r / min. The corrosion-resistant constant flow pump delivers the repair fluid to the liquid inlet pipe at a pressure of 0.18MPa. The air compressor provides a stable airflow to the pressure chamber through the air path control group. The multi-stage energy control flow changes the energy density at a frequency of 10Hz, and the amplitude of the energy density change is 0.4W / cm 2 ,After 130s of repair treatment, the matte damage layer on the wafer surface was ,completely removed, and the surface roughness was reduced from the initial 45nm ,to below 3nm.

[0038] Example 4

[0039] During the repair process, the speed of the rotating carrier platform is set at 850r / min. The corrosion-resistant constant flow pump delivers the repair fluid to the liquid inlet pipe at a pressure of 0.21MPa. The air compressor provides a stable airflow to the pressure chamber through the air path control group. The multi-stage energy control flow changes the energy density at a frequency of 10Hz, and the amplitude of the energy density change is 0.55W / cm 2 After the repair process lasted for 115 seconds, the matte damage layer on the wafer surface was completely removed, and the surface roughness was reduced from the initial 55nm to below 4.5nm.

[0040] Data comparison table:

[0041]

[0042] It can be seen from the above specific embodiments that the present invention can effectively remove the matte damage layer formed on the wafer surface due to mechanical or etching effects by precisely controlling the energy density and action time of the multi-level energy control beam, while avoiding secondary damage to the graphic structure on the wafer surface.

[0043] In order to better enable relevant personnel in this technical field to fully understand and implement the present invention, the specific implementation principles of the present invention are further supplemented below in combination with specific application scenarios.

[0044] In actual operation, the wafer to be repaired is first placed on the rotating supporting platform 1, and driven by a motor to rotate at a speed of 800r / min to 900r / min. This speed range has been optimized to ensure that the surface of the wafer can evenly receive the effect of the multi-stage energy regulation flow beam, while avoiding the problem of uneven repair effect or prolonged repair time due to too high or too low speed. Subsequently, the corrosion-resistant constant flow pump is started to transport the repair liquid to the flexible liquid inlet pipe 7 through the liquid inlet pipe. After the repair liquid passes through the rigid conduit 8, the elastic transition pipe 9 and the gradually expanding nozzle section, it is finally ejected from the gradually converging nozzle head 6 to form a multi-stage energy regulation flow beam. In this process, the hyperbolic structure of the inner and outer walls of the flexible liquid inlet pipe 7 effectively balances the fluid transmission performance under high-pressure environment, ensuring the stability of the repair liquid flow.

[0045] The air compressor provides a stable airflow to the pressure chamber through the air control group. The air control group consists of a one-way valve and a solenoid valve in series to ensure precise control of the airflow. The airflow in the pressure chamber interacts with the repair fluid in the stratified flow channel to form a multi-level energy-controlled flow beam. The energy density of this flow beam changes periodically at a frequency of 10Hz, and the energy density change amplitude is 0.5W / cm 2 This dynamic change in energy density is achieved through a graded adjustment component, where the combination of a helical compression spring and a hollow blocking ball enables the beam to switch between different energy levels, precisely matching the depth characteristics and repair requirements of the wafer surface matte damage layer.

[0046] The rectifier module 3 dynamically rectifies the jet stream through the coordinated action of the diverter head 10, the Z-shaped metal rod and the baffle 11. The cone angle β of the diverter head 10 satisfies 45°≤β<75°, and its design ensures that the stream remains evenly distributed during the diversion process. The linear motor drives the Z-shaped metal rod to perform reciprocating linear motion in the horizontal direction, driving the baffle 11 to move, and the limit block 12 limits the range of motion of the baffle 11 to prevent the stream from affecting the repair effect due to excessive deviation. The roller rotates at a speed of 15r / min to further ensure the stability of the stream.

[0047] During the 120-second repair process, a multi-level energy-controlled beam acts on the wafer surface at a set frequency and energy density. The periodic variation in the beam's energy density enables the repair fluid to gradually remove the damaged layer from the wafer's surface, while preventing secondary damage to the wafer's surface structures. The hyperbolic inner wall design of the elastic transition tube 9 and the optimized taper angle of the tapered nozzle head 6 ensure high energy concentration at the beam's outlet, effectively removing the damaged layer from the wafer surface.

[0048] After the repair was complete, the wafer was removed and its surface roughness was measured. Experimental data showed that a wafer with an initial surface roughness of 50nm had its surface roughness significantly reduced to below 5nm after 120 seconds of repair. This demonstrates that the energy density and duration of the multi-level energy-controlled beam were precisely controlled, enabling accurate repair of the wafer's matte surface damage layer.

[0049] The above steps demonstrate that this invention leverages the structural characteristics of a multi-level energy-controlled surface repair device and optimized process parameters to achieve efficient repair of the matte damage layer on wafer surfaces. The synergistic effect of these components ensures the stability and consistency of the repair process, providing reliable technical support for the 12-inch wafer regeneration field.

[0050] While embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions, and variations may be made to these embodiments without departing from the principles and spirit of the invention, and that the scope of the invention is defined by the appended claims and their equivalents.

Claims

1. A method for repairing a damaged layer on a 12-inch wafer matte surface, characterized by: The following steps are involved: A multi-stage energy regulation type surface repair device is used to repair the fog surface damage layer on the wafer surface. The multi-stage energy regulation type surface repair device comprises a rotating bearing platform (1), a multi-stage energy injection assembly (2), and a rectification module (3) for dynamically rectifying the injection beam.

2. The method for repairing a damaged layer on a 12-inch wafer matte surface according to claim 1, wherein: The multi-stage energy injection assembly (2) comprises an outer cylinder (4), an inner nozzle structure (5), a graded adjustment assembly, a liquid inlet pipe, a tapered nozzle head (6), a safety exhaust valve, and an air path control group. The upper end of the outer cylinder (4) is provided with a top cover by a threaded connection. The lower end of the outer cylinder (4) is provided with an inverted conical base. A bottom through hole is provided in the center of the base. A top through hole is provided in the center of the top cover. The top cover is also provided with two auxiliary through holes located on the left and right sides of the top through hole and two auxiliary through holes located on the top and bottom sides of the top through hole. The air path through holes on both sides of the front and rear of the through hole are connected, one end of the safety exhaust valve is connected to the auxiliary through hole, and one end of the air path control group is connected to the air path through hole; the inner nozzle structure (5) is composed of a flexible liquid inlet pipe (7), a rigid conduit (8), an elastic transition pipe (9), and a gradually expanding nozzle section in order from top to bottom, the lower end of the liquid inlet pipe is sealed with the upper end of the flexible liquid inlet pipe (7) by a clamp, the lower end of the gradually expanding nozzle section is connected with the upper end of the tapered nozzle head (6) by a thread, and the elastic transition pipe (9) is connected to the upper end of the tapered nozzle head (6) by a thread. The inner wall is a hyperbolic structure, the expansion angle of the gradually expanding nozzle section is greater than the contraction angle of the gradually converging nozzle head (6), the inner diameter of the outlet end of the gradually converging nozzle head (6) is smaller than the inner diameter of the inlet end, and the inner diameter of the outlet end of the gradually expanding nozzle section is smaller than the inner diameter of the inlet end; the upper end of the liquid inlet pipe is arranged above the outer cylinder (4), the flexible liquid inlet pipe (7), the rigid conduit (8), and the elastic transition pipe (9) are all arranged inside the outer cylinder (4), and the lower end of the gradually converging nozzle head (6) is arranged at the outer cylinder (4). Below, a pressure chamber is formed between the inner nozzle structure (5) and the outer cylinder (4), and the interior of the inner nozzle structure (5) is configured as a layered flow channel; the graded adjustment component comprises an annular magnet fixedly mounted inside the rigid conduit (8), a helical compression spring, and a hollow sealing ball for periodically blocking the outlet end of the gradually expanding nozzle section, the upper end of the helical compression spring is fixed to the annular magnet by welding, and the lower end of the helical compression spring is connected to the hollow sealing ball by a thread; a flow control valve group is provided at the liquid inlet pipe.

3. The method for repairing a damaged layer on a 12-inch wafer matte surface according to claim 2, wherein: The rectifier module (3) comprises a diverter head (10) located between a tapered nozzle head (6) and a rotating bearing platform (1), a Z-shaped metal rod, a baffle (11) fixedly mounted at the end of the metal rod, a linear motor for driving the metal rod to perform reciprocating linear motion in a horizontal direction, and a limiting device for limiting the range of motion of the baffle (11); the diverter head (10) comprises a semi-ellipsoidal base, the top of the base being configured as a truncated cone-shaped diverter head; the upper end of the metal rod is fixedly connected to the bottom of the base by bolts, and the output shaft of the linear motor is connected to the baffle (11) by screws; the limiting device comprises a roller, a plurality of limiting blocks (12) for blocking the baffle (11) are fixedly mounted on the wheel surface of the roller, and adjacent limiting blocks (12) are arranged in a staggered manner.

4. The method for repairing a damaged layer on a 12-inch wafer matte surface according to claim 3, wherein: The cone angle of the truncated cone-shaped diverter head of the diverter head (10) is β, and 45°≤β<75°.

5. The method for repairing a damaged layer on a matte surface of a 12-inch wafer according to claim 2, wherein: When the pressure difference between the inside and outside of the flexible liquid inlet pipe (7) reaches equilibrium, a curve obtained by intercepting the outer wall of the flexible liquid inlet pipe (7) by the axial section of the flexible liquid inlet pipe (7) is a hyperbolic structure, and a curve obtained by intercepting the inner wall of the flexible liquid inlet pipe (7) by the axial section of the flexible liquid inlet pipe (7) is a hyperbolic structure.

6. The method for repairing a damaged layer on a matte surface of a 12-inch wafer according to claim 2, wherein: The liquid inlet pipeline is externally connected to a corrosion-resistant constant flow pump, the air circuit control group is externally connected to an air compressor, the air circuit control group is composed of a one-way valve and a solenoid valve in series, and the flow control valve group is composed of a solenoid valve and a check valve in series.

7. The method for repairing a damaged layer on a matte surface of a 12-inch wafer according to claim 2, wherein: The hollow sealing ball includes a hemispherical hollow shell and a truncated cone-shaped hollow portion. The cone angle of the truncated cone-shaped hollow portion is 60°. The tip of the truncated cone-shaped hollow portion is connected to the lower end of the helical compression spring through a thread.

8. A method for repairing a damaged layer on a 12-inch wafer matte surface according to any one of claims 1 to 7, characterized in that: When a multi-stage energy-regulated surface repair device is used to repair a matte damage layer on a wafer surface, the wafer to be repaired is placed on a rotating carrier platform (1), the rotation speed of the rotating carrier platform (1) is set to 800 r / min to 900 r / min, a corrosion-resistant constant flow pump is used to transport a repair liquid to a liquid inlet pipe, the air path control group is externally connected to an air compressor, the repair liquid enters a layered flow channel through the liquid inlet pipe, and finally a multi-stage energy-regulated flow beam is ejected from a tapered nozzle head (6), the multi-stage energy-regulated flow beam changes energy density at a frequency of 10 Hz, and the amplitude of energy density change is 0.5 W / cm 2 In the above figures, the pressure of the fluid in the liquid inlet pipe is 0.2 MPa; the rotation speed of the roller is 15 r / min; and the repair process is completed after 120 s.

9. The method for repairing a damaged layer on a matte surface of a 12-inch wafer according to claim 8, wherein: The rotation speed of the rotating bearing platform (1) is set to 800 r / min, the pressure of the repair liquid passing through the liquid inlet pipe is 0.2 MPa, and the energy density change amplitude of the multi-level energy control beam is 0.5 W / cm 2 The repair process lasts for 120 seconds.

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