Cascade coupling super-symmetric semiconductor laser

Abstract

The invention is applicable to the technical field of semiconductor lasers, and provides a cascade coupling super-symmetric semiconductor laser, which comprises a main waveguide region, an N-type waveguide region, an active region and a P-type waveguide region, the cascade super-pairing array comprises super-pairing waveguides and super-pairing waveguide spacer regions, the cascade super-pairing array is formed by multiple cascade coupling transformation, the coupling transformation forms main waveguide region lasing mode, competition mode coupling and coupling waveguide, the coupling waveguide has an optical propagation constant similar to that of the competition mode, and the coupling waveguide has an optical propagation constant similar to that of the competition mode. The coupling module is used for realizing coupling loss of a competition mode; and the main waveguide region lasing mode and the coupling waveguide are combined to form a main waveguide region for next coupling transformation, so that multiple cascade coupling transformation is carried out and a large mode discrimination capability is obtained. Therefore, multiple times of coupling of a main waveguide competition mode can be realized through multiple times of cascade coupling conversion, and the single transverse mode characteristic of the semiconductor laser is further improved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor lasers, and in particular to a cascade-coupled supersymmetric semiconductor laser. Background Art

[0002] Semiconductor lasers are commonly used in solid-state laser and fiber laser pumping, fiber coupling, and material processing due to their high electro-optical conversion efficiency, good coherence, and compact size. The spot characteristics of single-transverse-mode semiconductor lasers are more conducive to subsequent optical pumping or optical coupling, so improving the large transverse-mode characteristics of semiconductor lasers is of great practical significance.

[0003] At present, semiconductor lasers mainly rely on reducing the width of the waveguide to screen the mode in the lateral direction, resulting in a reduction in the injection area of ​​the laser and a limit on the maximum output power. In the epitaxial direction, the mode is mainly screened by reducing the waveguide width or increasing the thickness of the waveguide on both the P and N sides. This results in limited freedom of epitaxial control and an inability to further reduce the thickness of the P-side waveguide and reduce the resistance and internal loss of the laser. In order to improve the mode discrimination capability of semiconductor lasers, supersymmetric transformations have gradually been introduced into semiconductor lasers. For semiconductor laser arrays, there has been related work using supersymmetric transformations to filter out high-order modes, but there is only a single coupling between the original main array and the super-paired array, and the mode screening effect is limited. For wide-face semiconductor lasers, although some research teams have constructed super-paired arrays through parameter scanning, when the size of the wide-face waveguide is too large and the number of modes is too large, it is impossible to match the super-paired array by simply relying on parameter scanning. Moreover, the wide-face waveguide and the super-paired array are only coupled once, and the mode screening effect is poor.

[0004] In summary, the existing technology has obvious inconveniences and defects in actual use, so it is necessary to improve it. Summary of the Invention

[0005] In view of the above-mentioned defects, the purpose of the present invention is to provide a cascade-coupled supersymmetric semiconductor laser, which can achieve multiple couplings of the main waveguide competing mode through multiple cascade coupling transformations, thereby further improving the single transverse mode characteristics of the semiconductor laser.

[0006] In order to achieve the above-mentioned objectives, the present invention provides a cascade-coupled supersymmetric semiconductor laser, wherein the main waveguide region includes an N-type waveguide region, an active region, and a P-type waveguide region; the cascaded super-paired array includes a super-paired waveguide and a super-paired waveguide spacer region, and the cascaded super-paired array is formed by multiple cascade coupling transformations, wherein the coupling transformation forms a main waveguide region lasing mode, a competitive mode coupling, and a coupled waveguide, and the coupled waveguide has an optical propagation constant similar to that of the competitive mode, so as to achieve coupling loss to the competitive mode; the main waveguide region lasing mode and the coupled waveguide are combined to form the main waveguide region of the next coupling transformation, so as to perform multiple cascade coupling transformations and obtain large mode discrimination capability.

[0007] A cascade-coupled supersymmetric semiconductor laser according to the present invention further includes an N-type side electrode to form an N-side electric injection channel;

[0008] An N-type substrate region, located on the N-type side electrode to support the semiconductor chip;

[0009] An N-type confinement region, located on the N-type substrate region, to limit the expansion of the light field;

[0010] N-type super-paired waveguide, located on the N-type confinement region to achieve cascade coupling transformation;

[0011] An N-type super-paired waveguide spacer region is located between the waveguide units of the N-type super-paired waveguide;

[0012] An N-type connection region, located on the N-type super-paired waveguide, to connect the N-type super-paired waveguide and the N-type waveguide region;

[0013] N-type waveguide area, located on the N-type connection area to appropriately expand the light field;

[0014] The active region is located on the N-type waveguide region to provide gain and includes common active structures such as bulk materials, quantum wells, and quantum dots.

[0015] A P-type waveguide region is located on the active region to appropriately expand the light field;

[0016] A P-type confinement region, located on the P-type waveguide region, to limit the expansion of the light field;

[0017] A P-type contact region is located on the P-type confinement region to form an ohmic contact with the P-type side electrode;

[0018] The insulating region is located on the P-type contact region to limit the current injection channel on the P side;

[0019] The P-type side electrode is located on the insulating region and the P-type contact region, forming a current injection channel on the P side.

[0020] According to a cascade-coupled supersymmetric semiconductor laser of the present invention, the main waveguide region includes a single wide-area multimode waveguide or a waveguide array formed by coupling multiple waveguide units, and the cascade super-paired array is located on one side of the main waveguide region or on both sides of the main waveguide region.

[0021] According to a cascade coupled supersymmetric semiconductor laser of the present invention, the structure of the cascade supersymmetric semiconductor laser formed by the combination of the cascade superpair array is used for the side of the semiconductor laser and is formed by a common semiconductor laser lithography or etching process;

[0022] The structure of the cascade supersymmetric semiconductor laser exists in the lateral and epitaxial directions of the laser, forming a two-dimensional cascade supersymmetric semiconductor laser.

[0023] According to a cascade-coupled supersymmetric semiconductor laser of the present invention, the N-type substrate region, N-type confinement region, N-type super-paired waveguide, N-type super-paired waveguide spacer region, N-type connection region, N-type waveguide region, active region, P-type waveguide region, P-type confinement region, and P-type contact region are all made of semiconductor materials and are in the form of single-layer, multi-layer, or gradient material distribution.

[0024] According to a cascade-coupled supersymmetric semiconductor laser of the present invention, the ridge region of the cascaded supersymmetric semiconductor laser is formed by dry etching or wet etching to a P-type confinement region or a P-type waveguide region.

[0025] According to a cascade-coupled supersymmetric semiconductor laser of the present invention, the pumping mode of the cascade-coupled supersymmetric semiconductor laser is electric pumping or optical pumping.

[0026] The present invention provides a cascade-coupled supersymmetric semiconductor laser, wherein the main waveguide region includes an N-type waveguide region, an active region, and a P-type waveguide region; the cascade superpair array includes a superpair waveguide and a superpair waveguide spacer region, and the cascade superpair array is formed by multiple cascade coupling transformations, wherein the coupling transformation forms a main waveguide region lasing mode, a competitive mode coupling, and a coupled waveguide, and the coupled waveguide has an optical propagation constant similar to that of the competitive mode, so as to achieve coupling loss to the competitive mode; the main waveguide region lasing mode and the coupled waveguide are combined to form the main waveguide region of the next coupling transformation, so as to perform multiple cascade coupling transformations and obtain a large mode discrimination capability. The beneficial effects of the present invention are as follows: the cascade supersymmetric semiconductor laser realizes multiple coupling between the main waveguide region and the superpair waveguide through multiple cascade coupling transformations, thereby improving the single transverse mode characteristics of the semiconductor laser; the multiple cascade transformations of the cascade supersymmetric semiconductor laser can not only filter out the competitive mode of the semiconductor laser array, but also filter out the competitive mode in a wide-size, multi-mode wide-waveguide semiconductor laser. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 It is a cross-sectional view of the present invention.

[0028] Figure 2 It is another cross-sectional view of the present invention.

[0029] Figure 3 It is the electric field distribution diagram of the present invention.

[0030] Figure 4 1 is a light confinement factor distribution diagram of the present invention.

[0031] In the figure, 1-N-type side electrode, 2-N-type substrate region, 3-N-type confinement region, 4-N-type super-paired waveguide, 41-coupled waveguide matched by the third coupling transformation, 42-coupled waveguide matched by the second coupling transformation, 43-coupled waveguide matched by the first coupling transformation, 5-N-type super-paired waveguide spacer region, 51-first spacer region, 52-second spacer region, 6-N-type connection region, 7-N-type waveguide region, 8-active region, 9-P-type waveguide region, 10-P-type confinement region, 11-P-type contact region, 12-insulating region, 13-P-type side electrode. DETAILED DESCRIPTION

[0032] In order to make the objectives, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention.

[0033] It should be noted that, in the description of the present invention, terms such as "up", "down", "left", "right", "inside", and "outside" indicating directions or positional relationships are based on the directions or positional relationships shown in the accompanying drawings. This is only for the convenience of description and does not indicate or imply that the device or element must have a specific orientation, be constructed and operated in a specific orientation. Therefore, it cannot be understood as a limitation on the present invention.

[0034] Furthermore, it should be noted that, in the description of the present invention, unless otherwise expressly specified or limited, the terms "mounted," "connected," and "connected" should be understood in a broad sense. For example, they may refer to fixed connections, detachable connections, or integral connections; mechanical connections or electrical connections; direct connections or indirect connections through an intermediate medium; and internal communication between two components. Those skilled in the art will understand the specific meanings of the above terms in the present invention based on specific circumstances.

[0035] See also Figure 1The present invention provides a cascade-coupled supersymmetric semiconductor laser, wherein the main waveguide region includes an N-type waveguide region, an active region, and a P-type waveguide region; the cascaded super-paired array includes a super-paired waveguide and a super-paired waveguide spacer region, and the cascaded super-paired array is formed by multiple cascade coupling transformations, wherein the coupling transformation forms a main waveguide region lasing mode, a competitive mode coupling, and a coupled waveguide, and the coupled waveguide has an optical propagation constant similar to that of the competitive mode, so as to achieve coupling loss to the competitive mode; the main waveguide region lasing mode and the coupled waveguide are combined to form the main waveguide region of the next coupling transformation, so as to perform multiple cascade coupling transformations and obtain large mode discrimination capability.

[0036] Preferably, the present invention further comprises an N-type side electrode 1, forming an N-side electric injection channel;

[0037] An N-type substrate region 2 is located on the N-type side electrode 1 to support the semiconductor chip;

[0038] An N-type confinement region 3, located on the N-type substrate region 2, to limit the expansion of the light field;

[0039] N-type super-paired waveguide 4, located on the N-type confinement region 3, to achieve cascade coupling transformation;

[0040] N-type super-paired waveguide spacer 5, located between the waveguide 4 units of the N-type super-paired waveguide;

[0041] An N-type connecting region 6 is located on the N-type super-paired waveguide 4 to connect the N-type super-paired waveguide 4 and the N-type waveguide spacer region 5;

[0042] N-type waveguide region 7, located on the N-type connection region 6, to appropriately expand the light field;

[0043] The active region 8 is located on the N-type waveguide region 7 to provide gain, and includes common active structures such as bulk materials, quantum wells, and quantum dots.

[0044] A P-type waveguide region 9 is located on the active region 8 to appropriately expand the light field;

[0045] A P-type confinement region 10 is located on the P-type waveguide region 9 to limit the expansion of the light field;

[0046] A P-type contact region 11 is located on the P-type confinement region 10 to form an ohmic contact with the P-type side electrode 13;

[0047] The insulating region 12 is located on the P-type contact region 11 to limit the current injection channel on the P side;

[0048] The P-type side electrode 13 is located on the insulating region 12 and the P-type contact region 11 , forming a P-side current injection channel.

[0049] In addition, the main waveguide region of the present invention includes a single wide-area multimode waveguide or a waveguide array formed by coupling multiple waveguide units, and the cascaded super-paired array is located on one side of the main waveguide region or on both sides of the main waveguide region.

[0050] Furthermore, the structure of the cascaded supersymmetric semiconductor laser formed by the cascaded superpair array combination of the present invention is used for the side of the semiconductor laser and is formed by a common semiconductor laser lithography or etching process;

[0051] The structure of the cascade supersymmetric semiconductor laser exists in the lateral and epitaxial directions of the laser, forming a two-dimensional cascade supersymmetric semiconductor laser.

[0052] More preferably, the N-type substrate region 2, N-type restriction region 3, N-type super-paired waveguide 4, N-type super-paired waveguide spacer region 5, N-type connection region 6, N-type waveguide region 7, active region 8, P-type waveguide region 9, P-type restriction region 10, and P-type contact region 11 of the present invention are all made of semiconductor materials, and are distributed in a single layer, multiple layers, or gradient manner.

[0053] In addition, the ridge region of the cascaded supersymmetric semiconductor laser of the present invention is formed by dry etching or wet etching to the P-type confinement region 10 or the P-type waveguide region 9 .

[0054] Finally, the pumping mode of the cascade supersymmetric semiconductor laser of the present invention is electric pumping or optical pumping.

[0055] Example 1:

[0056] A cascade-coupled supersymmetric semiconductor laser, comprising:

[0057] N-type side electrode 1, forming an N-side electric injection channel;

[0058] An N-type substrate region 2 is located on the N-type side electrode 1 to support the semiconductor chip;

[0059] An N-type confinement region 3, located on the N-type substrate region 2, to limit the expansion of the light field;

[0060] N-type super-paired waveguide 4, located on the N-type confinement region 3, to achieve cascade coupling transformation;

[0061] An N-type super-paired waveguide spacer 5 is located between the waveguide units of the N-type super-paired waveguide 4;

[0062] an N-type connecting region 6, located on the N-type super-paired waveguide 4, to connect the N-type super-paired waveguide 4 and the N-type waveguide region 7;

[0063] N-type waveguide region 7, located on the N-type connection region 6, to appropriately expand the light field;

[0064] The active region 8 is located on the N-type waveguide region 7 to provide gain.

[0065] A P-type waveguide region 9 is located on the active region 8 to appropriately expand the light field;

[0066] A P-type confinement region 10 is located on the P-type waveguide region 9 to limit the expansion of the light field;

[0067] A P-type contact region 11 is located on the P-type confinement region 10 to form an ohmic contact with the P-type side electrode 13;

[0068] The insulating region 12 is located on the P-type contact region 11 to limit the current injection channel on the P side;

[0069] The P-type side electrode 13 is located on the insulating region 12 and the P-type contact region 11 , forming a P-side current injection channel.

[0070] The main waveguide region includes an N-type side waveguide region 7, an active region 8, and a P-type side waveguide region 9; the N-type super-paired waveguide 4 includes a coupling waveguide 43 matched for the first coupling transformation, a coupling waveguide 42 matched for the second coupling transformation, and a coupling waveguide 41 matched for the third coupling transformation; the N-type super-paired waveguide spacer region 5 includes a second spacer region 52 between the coupling waveguide 43 matched for the first coupling transformation and the coupling waveguide 42 matched for the second coupling transformation, and a first spacer region 51 between the coupling waveguide 42 matched for the second coupling transformation and the coupling waveguide 41 matched for the third coupling transformation.

[0071] The N-type side electrode 1 and the P-type side electrode 13 are common metal stacks, deposited by processes such as magnetron sputtering and thermal evaporation, and require high-temperature alloying treatment; the N-type substrate region 2, the N-type confinement region 3, the N-type super-paired waveguide 4, the N-type super-paired waveguide spacer region 5, the N-type connection region 6, and the N-type waveguide region 7 are N-type doped AlGaAs materials; the active region 8 is an undoped InGaAs / AlGaAs quantum well structure; the P-type waveguide region 9, the P-type confinement region 10, and the P-type contact region 11 are P-type doped AlGaAs materials; and the insulating region 12 is a common insulating dielectric film, such as SiO2, Si3N4, etc.

[0072] The cascade coupled supersymmetric semiconductor laser includes three cascade coupling transformations, and the specific process is as follows: using the first coupling transformation, the first-order mode of the main waveguide area is matched to the coupling waveguide 43 matched by the first coupling transformation, and the coupling waveguide 43 matched by the first coupling transformation has a mode with the same propagation constant as the first-order mode of the main waveguide area, the coupling waveguide 43 matched by the first coupling transformation and the main waveguide area are connected by the N-type connecting area 6, and together constitute the main waveguide area of ​​the second coupling transformation; using the second coupling transformation, the first-order mode of the main waveguide area is matched to the coupling waveguide 42 matched by the second coupling transformation, and the coupling waveguide 42 matched by the second coupling transformation has a mode with the first-order mode propagation constant of the main waveguide area. The first-order mode propagation constant of the waveguide area is the same as the mode, and the coupling waveguide 42 matched by the second coupling transformation and the main waveguide area are connected by the second spacer area 52, together constituting the main waveguide area of ​​the third coupling transformation; using the third coupling transformation, the first-order mode of the main waveguide area is matched to the coupling waveguide 41 matched by the third coupling transformation, and the coupling waveguide 41 matched by the third coupling transformation has a mode with the same propagation constant as the first-order mode of the main waveguide area, and the coupling waveguide 41 matched by the third coupling transformation is connected to the main waveguide area by the first spacer area 51. Through the three-fold cascade coupling transformation, the first-order mode loss of the cascade coupled supersymmetric laser can be enhanced and the single transverse mode characteristics can be improved.

[0073] Example 2:

[0074] like Figure 2 As shown, a cascade-coupled supersymmetric semiconductor laser is different from the first embodiment in that:

[0075] The N-type super-paired waveguide 4 includes two coupled waveguides, namely a coupled waveguide 42 for the second coupling transformation matching and a coupled waveguide 41 for the third coupling transformation matching; the N-type super-paired waveguide spacer 5 is a spacer between the coupled waveguide 42 for the second coupling transformation matching and the coupled waveguide 41 for the third coupling transformation matching.

[0076] The cascade-coupled supersymmetric semiconductor laser includes two cascade coupling transformations, and the specific process is as follows: using the first coupling transformation, the first-order mode of the main waveguide area is matched to the coupling waveguide 42 matched by the second coupling transformation, and the coupling waveguide 42 matched by the second coupling transformation has the same mode as the first-order mode propagation constant of the main waveguide area, and the coupling waveguide 42 matched by the second coupling transformation and the main waveguide area are connected by the N-type connection area 6, together constituting the main waveguide area of ​​the second coupling transformation; using the second coupling transformation, the first-order mode of the main waveguide area is matched to the coupling waveguide 41 matched by the third coupling transformation, and the coupling waveguide 41 matched by the third coupling transformation has the same mode as the first-order mode propagation constant of the main waveguide area, and the coupling waveguide 41 matched by the third coupling transformation and the main waveguide area are connected by the N-type super-paired waveguide spacer 5. Through two cascade coupling transformations, the first-order mode loss of the cascade-coupled supersymmetric laser can be enhanced, and the single transverse mode characteristics can be improved.

[0077] Figure 3 The fundamental mode electric field distribution and refractive index distribution of the cascade-coupled supersymmetric semiconductor laser are shown in Figure 2. The fundamental mode is the lasing mode of Example 2 and is mainly localized in the main waveguide region. This shows that the two cascade coupling transformations mainly affect the first-order mode, i.e., the competitive mode, while the effect on the fundamental mode is negligible. The electric field distribution (black dotted line) and refractive index distribution (gray solid line) in the figure are shown. In the figure, x represents the spatial position in the epitaxial direction, and the left vertical axis |E| n represents the normalized absolute value of the electric field, and n represents the refractive index of the material.

[0078] Figure 4 This is the distribution of optical confinement factors for different modes of cascade-coupled supersymmetric semiconductor lasers. The optical confinement factor distribution diagram, in which the horizontal axis β represents the propagation constant of different modes, the vertical axis Γ represents the optical confinement factor, and the dotted circle in the figure corresponds to the fundamental mode. Figure 4 This further confirms that the optical confinement factor of the fundamental mode is much greater than that of the competing modes, demonstrating that this cascade-coupled supersymmetric semiconductor laser exhibits excellent mode discrimination. Clearly, the cascade coupling transformation not only reduces coupling loss in the first-order mode but also couples and transforms other higher-order modes with larger optical confinement factors, such as the second-order mode in Example 2, further enhancing the laser's mode discrimination capability.

[0079] In summary, the present invention provides a cascade-coupled supersymmetric semiconductor laser, wherein the main waveguide region includes an N-type waveguide region, an active region, and a P-type waveguide region; the cascade superpair array includes a superpair waveguide and a superpair waveguide spacer region, and the cascade superpair array is formed by multiple cascade coupling transformations, wherein the coupling transformation forms a main waveguide region lasing mode, a competitive mode coupling, and a coupled waveguide, and the coupled waveguide has an optical propagation constant similar to that of the competitive mode, so as to achieve coupling loss to the competitive mode; the main waveguide region lasing mode and the coupled waveguide are combined to form the main waveguide region of the next coupling transformation, so as to perform multiple cascade coupling transformations and obtain a large mode discrimination capability. The beneficial effects of the present invention are as follows: the cascade supersymmetric semiconductor laser realizes multiple coupling between the main waveguide region and the superpair waveguide through multiple cascade coupling transformations, thereby improving the single transverse mode characteristics of the semiconductor laser; the multiple cascade transformations of the cascade supersymmetric semiconductor laser can not only filter out the competitive mode of the semiconductor laser array, but also filter out the competitive mode in a wide-size, multi-mode wide-waveguide semiconductor laser.

[0080] Of course, the present invention may have many other embodiments. Without departing from the spirit and essence of the present invention, those skilled in the art may make various corresponding changes and modifications based on the present invention, but these corresponding changes and modifications should all fall within the scope of protection of the claims attached to the present invention.

Claims

1. A cascade-coupled supersymmetric semiconductor laser, characterized in that: The main waveguide region includes an N-type waveguide region, an active region, and a P-type waveguide region; A cascaded super-paired array comprising a super-paired waveguide and a super-paired waveguide spacer, wherein the cascaded super-paired array is formed by multiple cascaded coupling transformations, wherein the coupling transformations form a main waveguide region lasing mode, a competitive mode coupling, and a coupled waveguide, wherein the coupled waveguide has an optical propagation constant similar to that of the competitive mode, so as to achieve coupling loss to the competitive mode; The lasing mode in the main waveguide region and the coupled waveguide are combined to form the main waveguide region for the next coupling transformation, so as to perform multiple cascade coupling transformations and obtain large mode discrimination capability.

2. The cascade-coupled supersymmetric semiconductor laser according to claim 1, characterized in that: It also includes an N-type side electrode to form an N-side electric injection channel; An N-type substrate region, located on the N-type side electrode to support the semiconductor chip; An N-type restriction region, located on the N-type substrate region, to limit the expansion of the light field; N-type super-paired waveguide, located on the N-type confinement region to achieve cascade coupling transformation; An N-type super-paired waveguide spacer region is located between the waveguide units of the N-type super-paired waveguide; An N-type connection region, located on the N-type super-paired waveguide, to connect the N-type super-paired waveguide and the N-type waveguide spacer region; N-type waveguide area, located on the N-type connection area to appropriately expand the light field; The active region is located on the N-type waveguide region to provide gain and includes common active structures such as bulk materials, quantum wells, and quantum dots. A P-type waveguide region is located on the active region to appropriately expand the light field; A P-type confinement region, located on the P-type waveguide region, to limit the expansion of the light field; A P-type contact region is located on the P-type confinement region to form an ohmic contact with the P-type side electrode; The insulating region is located on the P-type contact region to limit the current injection channel on the P side; The P-type side electrode is located on the insulating region and the P-type contact region, forming a current injection channel on the P side.

3. The cascade-coupled supersymmetric semiconductor laser according to claim 1, characterized in that: The main waveguide area includes a single wide-area multimode waveguide or a waveguide array formed by coupling multiple waveguide units, and the cascaded super-paired array is located on one side of the main waveguide area or on both sides of the main waveguide area.

4. The cascade-coupled supersymmetric semiconductor laser according to claim 1, characterized in that: The structure of the cascaded supersymmetric semiconductor laser formed by the cascaded super-pair array combination is used for the side of the semiconductor laser and is formed by a common semiconductor laser lithography or etching process; The structure of the cascade supersymmetric semiconductor laser exists in the lateral and epitaxial directions of the laser, forming a two-dimensional cascade supersymmetric semiconductor laser.

5. The cascade-coupled supersymmetric semiconductor laser according to claim 1, characterized in that: The N-type substrate region, N-type restriction region, N-type super-paired waveguide, N-type super-paired waveguide spacer region, N-type connection region, N-type waveguide region, active region, P-type waveguide region, P-type restriction region, and P-type contact region are all made of semiconductor materials and are distributed in a single layer, multiple layers, or gradient material form.

6. The cascade-coupled supersymmetric semiconductor laser according to claim 4, characterized in that: The ridge region of the cascaded supersymmetric semiconductor laser is formed by dry etching or wet etching to the P-type confinement region or the P-type waveguide region.

7. The cascade-coupled supersymmetric semiconductor laser according to claim 6, characterized in that: The pumping mode of the cascade supersymmetric semiconductor laser is electric pumping or optical pumping.

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