Semiconductor laser element with spin polarization sub-layer

Abstract

The invention provides a semiconductor laser element with a spin polarization sub-layer. The semiconductor laser element comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer which are sequentially arranged from bottom to top. According to the semiconductor laser element, the spin polarization sub-layers of a multi-layer structure are arranged between the upper limiting layer and the upper waveguide layer in the semiconductor laser element, and the electron mobility distribution characteristic and the piezoelectric polarization coefficient distribution characteristic of each spin polarization sub-layer are limited. Specific electron mobility distribution and piezoelectric polarization coefficient distribution of the spin polarization sub-layer form an asymmetric discrete potential barrier, lattice distortion structure polarization is modulated, charge dipole momentum net accumulation is increased, the piezoelectric polarization effect of the active layer is regulated and controlled, the quantum restriction effect is suppressed, energy band inclination of the active layer is reduced, and hole injection band order is reduced. The overlapping probability of the electron hole wave function is improved, and the internal quantum efficiency is improved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor optoelectronic devices, and in particular to a semiconductor laser element having a spin-polarized sublayer. Background Art

[0002] Lasers are widely used in laser displays, laser televisions, laser projectors, communications, medical treatment, weaponry, guidance, rangefinders, spectral analysis, cutting, precision welding, high-density optical storage, and other fields. There are many different types of lasers, classified in various ways, including solid-state, gas, liquid, semiconductor, and dye lasers. Compared with other types of lasers, all-solid-state semiconductor lasers offer advantages such as small size, high efficiency, light weight, excellent stability, long life, simple and compact structure, and miniaturization.

[0003] There are significant differences between lasers and nitride semiconductor light-emitting diodes:

[0004] 1) Laser is generated by stimulated radiation of carriers, with a small spectral half-width and high brightness. The output power of a single laser can be in the W level, while nitride semiconductor light-emitting diodes emit spontaneous radiation, and the output power of a single light-emitting diode is in the mW level.

[0005] 2) The current density of the laser reaches KA / cm2, which is more than 2 orders of magnitude higher than that of nitride light-emitting diodes, resulting in stronger electron leakage, more serious Auger recombination, stronger polarization effect, more serious electron-hole mismatch, and more serious efficiency attenuation Droop effect;

[0006] 3) The spontaneous transition radiation of the light-emitting diode is incoherent light that transitions from a high energy level to a low energy level without any external influence, while the laser is stimulated transition radiation. The energy of the induced photon should be equal to the difference in the energy level of the electron transition, and the photon and the induced photon are completely coherent light;

[0007] 4) Different principles: Light-emitting diodes generate radiative recombination light when electrons and holes jump to quantum wells or pn junctions under the action of external voltage, while lasers require that lasing conditions be met before lasing. The carrier inversion distribution in the active region must be met, and the stimulated radiation light oscillates back and forth in the resonant cavity. The propagation in the gain medium amplifies the light, and the threshold condition is met so that the gain is greater than the loss, and finally the laser is output.

[0008] Nitride semiconductor lasers have the following problems:

[0009] 1) The lattice mismatch and large strain in the active layer induce a strong piezoelectric polarization effect, which produces a strong QCSE quantum confined Stark effect, limiting the improvement of the laser's lasing gain;

[0010] 2) The optical waveguide has high absorption loss. Intrinsic carbon impurities in p-type semiconductors will compensate for acceptors and destroy the p-type. The ionization rate of p-type doping is low, and a large amount of unionized Mg acceptor impurities will lead to increased internal optical losses. In addition, the refractive index dispersion of the laser and the limiting factor decrease with increasing wavelength, resulting in a decrease in the mode gain of the laser.

[0011] 3) The Mg acceptor activation energy of p-type semiconductors is large, the ionization efficiency is low, the hole concentration is much lower than the electron concentration, the hole mobility is much lower than the electron mobility, and the quantum well polarization electric field increases the hole injection barrier, holes overflow the active layer, and other problems. The hole injection is uneven and the efficiency is low, resulting in serious asymmetric mismatch between electrons and holes in the quantum well, electron leakage and carrier delocalization, making hole transport more difficult in the quantum well, uneven carrier injection, and uneven gain. At the same time, the laser gain spectrum becomes broadened and the peak gain decreases, resulting in an increase in the laser threshold current and a decrease in slope efficiency.

[0012] 4) The step difference of the laser valence band increases, the hole transport in the quantum well becomes more difficult, the carrier injection is uneven, and the gain is uneven. Summary of the Invention

[0013] To solve one of the above technical problems, the present invention provides a semiconductor laser element having a spin polarization layer.

[0014] An embodiment of the present invention provides a semiconductor laser element having a spin-polarized sublayer, comprising a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper confinement layer, arranged sequentially from bottom to top. A spin-polarized sublayer is arranged between the upper confinement layer and the upper waveguide layer. The spin-polarized sublayer comprises a first spin-polarized sublayer, a second spin-polarized sublayer, and a third spin-polarized sublayer, arranged sequentially from bottom to top. The first spin-polarized sublayer, the second spin-polarized sublayer, and the third spin-polarized sublayer all have electron mobility distribution characteristics and piezoelectric polarization coefficient distribution characteristics.

[0015] The electron mobility of the first spin-polarized sublayer has the function y1=A+B*x1 2 / sinx1 curve distribution, the electron mobility of the second spin polarized sublayer has the function y2=C+D*e -x2 +U*x2-1 curve distribution, the electron mobility of the third spin-polarized sublayer has a first quadrant curve distribution of function y3=F+E*lnx3-T*x3+1;

[0016] The piezoelectric polarization coefficient of the first spin polarization sublayer has a function y4=G+H*tanx1 curve distribution; the piezoelectric polarization coefficient of the second spin polarization sublayer has a function y5=I+J*e x2-R*x2-1 curve distribution; the piezoelectric polarization coefficient of the third spin-polarized sublayer has a first quadrant curve distribution of function y6=K+L*lnx3-S*x3+1;

[0017] Wherein, x1 is the depth from the first spin-polarized sublayer to the second spin-polarized sublayer, x2 is the depth from the second spin-polarized sublayer to the third spin-polarized sublayer, and x3 is the depth from the third spin-polarized sublayer to the upper confinement layer.

[0018] Preferably, the electron mobility of the first spin polarization sublayer is d, the electron mobility of the second spin polarization sublayer is e, and the electron mobility of the third spin polarization sublayer is f, wherein: 10 (cm2 / Vsec)<e<f<d<20000 (cm2 / Vsec).

[0019] Preferably, the piezoelectric polarization coefficient of the first spin-polarized sublayer is g, the piezoelectric polarization coefficient of the second spin-polarized sublayer is h, and the piezoelectric polarization coefficient of the third spin-polarized sublayer is i, wherein: 0.2<h<i<g<25.

[0020] Preferably, the first spin polarized sublayer, the second spin polarized sublayer and the third spin polarized sublayer also have polarimetric phonon energy distribution characteristics and spontaneous polarization coefficient distribution characteristics;

[0021] The polarimetric phonon energy of the first spin polarimetric sublayer has a function y7=M+N*cotx1 curve distribution, and the polarimetric phonon energy of the second spin polarimetric sublayer has a function y8=ax2 2 +bx2+c curve distribution, where a<0, the polarized optical phonon energy of the third spin-polarized sublayer has the function y9=mx3 2 +nx3+p curve distribution, where m>0;

[0022] The spontaneous polarization coefficient of the first spin-polarized sublayer has a function y 10 =P+Q*cotx1 curve distribution, the spontaneous polarization coefficient of the second spin polarized sublayer has a function y 11 =qx2 2 +rx2+s curve distribution, where q<0, the spontaneous polarization coefficient of the third spin-polarized sublayer has the function y 12 =tx3 2 +ux3+v curve distribution, where t>0.

[0023] Preferably, the polarimetric phonon energy of the first spin-polarimetric sublayer is j, the polarimetric phonon energy of the second spin-polarimetric sublayer is k, and the polarimetric phonon energy of the third spin-polarimetric sublayer is l, wherein: 20 (meV)<j<l<k<800 (meV).

[0024] Preferably, the spin polarization sublayer is GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond, Y2NiMnO6, SnO2, Mo6V9O 40 , any one or any combination of NaMnO2:Ti, LaAlO3, KTaO3, 2D-MoS2@3D-LiFePO4, 2D-WS2@3D-Ta2Pd3Se8, 2D-MnO3@3D-Ta2Pt3Se8, 2D-WTe2@3D-CoSe2, and 2D-CdSe@3D-CdS.

[0025] Preferably, the active layer is a periodic structure consisting of a well layer and a barrier layer, with the number of periods being 1 to 3, the well layer being any one or any combination of InGaN, InN, AlInN, and GaN, with a thickness of 10 to 100 angstroms, and the barrier layer being any one or any combination of GaN, AlGaN, AlInGaN, AlN, and AlInN, with a thickness of 10 to 150 angstroms.

[0026] Preferably, the lower confinement layer is any one or any combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, with a thickness of 50nm to 5000nm and a Si doping concentration of 1E18cm -3 to 1E20cm -3 ;

[0027] The upper confinement layer is any one or any combination of GaN, AlGaN, AlInGaN, AlN, and AlInN, with a thickness of 20 nm to 1000 nm and a Mg doping concentration of 1E18 cm -3 to 1E20cm -3 .

[0028] Preferably, the lower waveguide layer and the upper waveguide layer are any one or any combination of GaN, InGaN, and AlInGaN, with a thickness of 50nm to 1000nm and a Si doping concentration of 1E16cm -3 to 5E19 cm -3 .

[0029] Preferably, the substrate includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x , sapphire / SiO2 / SiN x Composite substrate, any one of magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrates.

[0030] The present invention has the following beneficial effects: The present invention provides a multilayered structure of spin-polarized sublayers in a semiconductor laser element, and defines the electron mobility distribution and piezoelectric polarization coefficient distribution characteristics of each spin-polarized sublayer. The specific electron mobility distribution and piezoelectric polarization coefficient distribution of the spin-polarized sublayer form an asymmetric discrete potential barrier, modulating the polarization of the lattice distortion structure, increasing the net accumulation of charge dipole momentum, regulating the piezoelectric polarization effect of the active layer, suppressing the quantum-confined Stark effect, reducing the band tilt of the active layer, lowering the hole injection band order, increasing the probability of electron-hole wave function overlap, and improving the internal quantum efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] The drawings described herein are used to provide a further understanding of the present application and constitute a part of the present application. The illustrative embodiments of the present application and their descriptions are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings:

[0032] Figure 1 A schematic structural diagram of a semiconductor laser element having a spin-polarized sublayer according to an embodiment of the present invention;

[0033] Figure 2 This is a SIMS secondary ion mass spectrum of the semiconductor laser device with a spin-polarized sublayer according to an embodiment of the present invention.

[0034] Reference numerals:

[0035] 100, substrate, 101, lower confinement layer, 102, lower waveguide layer, 103, active layer, 104, upper waveguide layer, 105, upper confinement layer, 106, spin polarization sublayer;

[0036] 106a, a first spin-polarized sublayer, 106b, a second spin-polarized sublayer, 106c, a third spin-polarized sublayer. DETAILED DESCRIPTION

[0037] In order to make the technical solutions and advantages of the embodiments of the present application more clearly understood, the exemplary embodiments of the present application are further described in detail below with reference to the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present application, and are not an exhaustive list of all the embodiments. It should be noted that the embodiments and features in the embodiments of the present application can be combined with each other unless they conflict.

[0038] like Figure 1 and Figure 2 As shown, this embodiment provides a semiconductor laser element with a spin-polarized sublayer, comprising, arranged from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, and an upper confinement layer 105. A spin-polarized sublayer 106 is also provided in the semiconductor laser element with a spin-polarized sublayer.

[0039] Specifically, in this embodiment, the semiconductor laser element having a spin-polarized sublayer is provided with, from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, and an upper confinement layer 105. Spin-polarized sublayer 106 is provided between upper confinement layer 105 and upper waveguide layer 104. Spin-polarized sublayer 106 has a multilayer structure, specifically including a first spin-polarized sublayer 106a, a second spin-polarized sublayer 106b, and a third spin-polarized sublayer 106c. First spin-polarized sublayer 106a, second spin-polarized sublayer 106b, and third spin-polarized sublayer 106c are provided in order from bottom to top. The first spin polarization sublayer 106a, the second spin polarization sublayer 106b, and the third spin polarization sublayer 106c all have specific physical properties, specifically electron mobility distribution characteristics and piezoelectric polarization coefficient distribution characteristics, which are specifically shown as follows:

[0040] Electron mobility distribution:

[0041] The electron mobility of the first spin polarized sublayer 106a has the function y1=A+B*x1 2 / sinx1 curve distribution;

[0042] The electron mobility of the second spin polarized sublayer 106b has the function y2=C+D*e -x2 +U*x2-1 curve distribution;

[0043] The electron mobility of the third spin polarized sublayer 106 c has a first quadrant curve distribution of the function y3=F+E*lnx3-T*x3+1;

[0044] Piezoelectric polarization coefficient distribution:

[0045] The piezoelectric polarization coefficient of the first spin polarization sublayer 106a has a curve distribution of the function y4=G+H*tanx1;

[0046] The piezoelectric polarization coefficient of the second spin polarization sublayer 106b has the function y5=I+J*e x2 -R*x2-1 curve distribution;

[0047] The piezoelectric polarization coefficient of the third spin polarization sublayer 106 c has a first quadrant curve distribution of the function y6 =K+L*lnx3-S*x3+1.

[0048] Wherein, x1 is the depth from the first spin polarized sublayer 106a to the second spin polarized sublayer 106b, x2 is the depth from the second spin polarized sublayer 106b to the third spin polarized sublayer 106c, and x3 is the depth from the third spin polarized sublayer 106c to the upper confinement layer 105.

[0049] This embodiment incorporates a multi-layered spin-polarized sublayer 106 in a semiconductor laser element, and defines the electron mobility distribution and piezoelectric polarization coefficient distribution characteristics of each spin-polarized sublayer 106. The specific electron mobility and piezoelectric polarization coefficient distributions of the spin-polarized sublayer 106 form an asymmetric discrete potential barrier, modulating the polarization of the lattice distortion structure, increasing the net accumulation of charge dipole momentum, regulating the piezoelectric polarization effect of the active layer 103, suppressing the quantum confined Stark effect, reducing the band tilt of the active layer 103, lowering the hole injection band step, and increasing the probability of electron-hole wave function overlap, thereby improving the internal quantum efficiency.

[0050] In some optional embodiments, the electron mobilities in the first spin-polarized sublayer 106a, the second spin-polarized sublayer 106b, and the third spin-polarized sublayer 106c also have a certain size relationship, specifically: the electron mobility of the first spin-polarized sublayer 106a is d, the electron mobility of the second spin-polarized sublayer 106b is e, and the electron mobility of the third spin-polarized sublayer 106c is f, wherein: 10 (cm2 / Vsec)<e<f<d<20000 (cm2 / Vsec).

[0051] In some optional embodiments, the piezoelectric polarization coefficients in the first spin polarization sublayer 106a, the second spin polarization sublayer 106b and the third spin polarization sublayer 106c also have a certain size relationship, specifically: the piezoelectric polarization coefficient of the first spin polarization sublayer 106a is g, the piezoelectric polarization coefficient of the second spin polarization sublayer 106b is h, and the piezoelectric polarization coefficient of the third spin polarization sublayer 106c is i, where: 0.2<h<i<g<25.

[0052] In some optional embodiments, the first spin-polarized sublayer 106 a , the second spin-polarized sublayer 106 b , and the third spin-polarized sublayer 106 c also have polarimetric phonon energy distribution characteristics and spontaneous polarization coefficient distribution characteristics, which are specifically manifested as follows:

[0053] Polarimetric phonon energy distribution:

[0054] The polarimetric optical phonon energy of the first spin-polarimetric sublayer 106a has a distribution curve of function y7=M+N*cotx1;

[0055] The polarimetric phonon energy of the second spin-polariton layer 106b has the function y8=ax2 2 +bx2+c curve distribution, where a<0;

[0056] The polarimetric phonon energy of the third spin-polariton layer 106c has the function y9=mx3 2 +nx3+p curve distribution, where m>0;

[0057] Spontaneous polarization coefficient distribution:

[0058] The spontaneous polarization coefficient of the first spin-polarized sublayer 106a has the function y 10 =P+Q*cotx1 curve distribution;

[0059] The spontaneous polarization coefficient of the second spin-polarized sublayer 106b has the function y 11 =qx2 2 +rx2+s curve distribution, where q < 0;

[0060] The spontaneous polarization coefficient of the third spin-polarized sublayer 106c has the function y 12 =tx3 2 +ux3+v curve distribution, where t>0.

[0061] This embodiment designs specific polarimetric phonon energy distribution characteristics and spontaneous polarization coefficient distribution characteristics in each spin-polarized sublayer 106. The specific electron mobility distribution and spontaneous polarization coefficient distribution of the spin-polarized sublayer 106 form fast coherent spin exchange and spin-orbit splitting, improving valley spin splitting and spin-polarized hole concentration, reducing the valence band step difference of the laser, improving carrier transport efficiency and tunneling probability, and improving the transport efficiency of electrons and holes and the efficiency of injection into the active layer 103. This improves the radiative recombination efficiency of the laser element active layer 103, reduces the excitation threshold of the laser element, and improves the laser element's mode gain, peak gain, optical power, and slope efficiency.

[0062] In some optional embodiments, the polariton phonon energies in the first spin-polarized sublayer 106a, the second spin-polarized sublayer 106b, and the third spin-polarized sublayer 106c also have a certain size relationship, specifically: the polariton phonon energy of the first spin-polarized sublayer 106a is j, the polariton phonon energy of the second spin-polarized sublayer 106b is k, and the polariton phonon energy of the third spin-polarized sublayer 106c is l, wherein: 20 (meV) < j < l < k < 800 (meV).

[0063] In some optional embodiments, the spin polarization sublayer 106 is GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond, Y2NiMnO6, SnO2, Mo6V9O 40 , any one or any combination of NaMnO2:Ti, LaAlO3, KTaO3, 2D-MoS2@3D-LiFePO4, 2D-WS2@3D-Ta2Pd3Se8, 2D-MnO3@3D-Ta2Pt3Se8, 2D-WTe2@3D-CoSe2, and 2D-CdSe@3D-CdS.

[0064] In some optional embodiments, the active layer 103 is a periodic structure consisting of a well layer and a barrier layer, with the number of periods being 1 to 3. The well layer is any one or any combination of InGaN, InN, AlInN, and GaN, with a thickness of 10 to 100 angstroms. The barrier layer is any one or any combination of GaN, AlGaN, AlInGaN, AlN, and AlInN, with a thickness of 10 to 150 angstroms.

[0065] In some optional embodiments, the lower confinement layer 101 is any one or any combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, and AlInN, with a thickness of 50 nm to 5000 nm and a Si doping concentration of 1E18 cm -3 to 1E20cm -3 .

[0066] In some optional embodiments, the upper confinement layer 105 is any one or any combination of GaN, AlGaN, AlInGaN, AlN, and AlInN, with a thickness of 20 nm to 1000 nm and a Mg doping concentration of 1E18 cm -3 to 1E20cm -3 .

[0067] In some optional embodiments, the lower waveguide layer 102 and the upper waveguide layer 104 are made of any one or any combination of GaN, InGaN, and AlInGaN, with a thickness of 50 nm to 1000 nm and a Si doping concentration of 1E16 cm -3 to 5E19 cm -3 .

[0068] In some optional embodiments, the substrate 100 includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x , sapphire / SiO2 / SiN x Composite substrate, any one of magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrates.

[0069] The following table compares parameters of a conventional semiconductor laser device and the semiconductor laser device with a spin-polarized sublayer proposed in this embodiment. The table includes slope efficiency, threshold current density, and optical power, showing the differences between the conventional semiconductor laser device and the semiconductor laser device with a spin-polarized sublayer proposed in this embodiment:

[0070]

[0071]

[0072] It can be seen that the semiconductor laser element with a spin polarization sublayer proposed in this embodiment improves the slope efficiency and optical power and reduces the threshold current density compared with traditional semiconductor laser elements, and has obvious advantages over traditional semiconductor laser elements.

[0073] Obviously, those skilled in the art may make various changes and modifications to this application without departing from the spirit and scope of this application. Thus, if these modifications and variations of this application fall within the scope of the claims of this application and their equivalents, this application is intended to include these modifications and variations.

Claims

1. A semiconductor laser element having a spin polarization sublayer, comprising a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper confinement layer, arranged in order from bottom to top, characterized in that: A spin-polarized sublayer is provided between the upper confinement layer and the upper waveguide layer, wherein the spin-polarized sublayer includes a first spin-polarized sublayer, a second spin-polarized sublayer, and a third spin-polarized sublayer, which are sequentially provided from bottom to top. The first spin-polarized sublayer, the second spin-polarized sublayer, and the third spin-polarized sublayer all have electron mobility distribution characteristics and piezoelectric polarization coefficient distribution characteristics. The electron mobility of the first spin-polarized sublayer has the function y1=A+B*x1 2 / sinx1 curve distribution, the electron mobility of the second spin polarized sublayer has the function y2=C+D*e -x2 +U*x2-1 curve distribution, the electron mobility of the third spin-polarized sublayer has a first quadrant curve distribution of function y3=F+E*lnx3-T*x3+1; The piezoelectric polarization coefficient of the first spin polarization sublayer has a function y4=G+H*tanx1 curve distribution; the piezoelectric polarization coefficient of the second spin polarization sublayer has a function y5=I+J*e x2 -R*x2-1 curve distribution; the piezoelectric polarization coefficient of the third spin-polarized sublayer has a first quadrant curve distribution of function y6=K+L*lnx3-S*x3+1; Wherein, x1 is the depth from the first spin-polarized sublayer to the second spin-polarized sublayer, x2 is the depth from the second spin-polarized sublayer to the third spin-polarized sublayer, and x3 is the depth from the third spin-polarized sublayer to the upper confinement layer.

2. The semiconductor laser device having a spin polarization layer according to claim 1, wherein: The electron mobility of the first spin-polarized sublayer is d, the electron mobility of the second spin-polarized sublayer is e, and the electron mobility of the third spin-polarized sublayer is f, wherein: 10 (cm2 / Vsec)<e<f<d<20000 (cm2 / Vsec).

3. The semiconductor laser device having a spin polarization layer according to claim 1, wherein: The piezoelectric polarization coefficient of the first spin-polarized sublayer is g, the piezoelectric polarization coefficient of the second spin-polarized sublayer is h, and the piezoelectric polarization coefficient of the third spin-polarized sublayer is i, wherein: 0.2<h<i<g<25.

4. The semiconductor laser device having a spin polarization layer according to claim 1, wherein: The first spin polariton layer, the second spin polariton layer and the third spin polariton layer also have polarimetric optical phonon energy distribution characteristics and spontaneous polarization coefficient distribution characteristics; The polarimetric phonon energy of the first spin polarimetric sublayer has a function y7=M+N*cotx1 curve distribution, and the polarimetric phonon energy of the second spin polarimetric sublayer has a function y8=ax2 2 +bx2+c curve distribution, where a<0, the polarized optical phonon energy of the third spin-polarized sublayer has the function y9=mx3 2 +nx3+p curve distribution, where m>0; The spontaneous polarization coefficient of the first spin-polarized sublayer has a function y 10 =P+Q*cotx1 curve distribution, the spontaneous polarization coefficient of the second spin polarized sublayer has a function y 11 =qx2 2 +rx2+s curve distribution, where q<0, the spontaneous polarization coefficient of the third spin-polarized sublayer has the function y 12 =tx3 2 +ux3+v curve distribution, where t>0.

5. The semiconductor laser device having a spin polarization layer according to claim 4, wherein: The polarimetric phonon energy of the first spin-polarimetric sublayer is j, the polarimetric phonon energy of the second spin-polarimetric sublayer is k, and the polarimetric phonon energy of the third spin-polarimetric sublayer is l, wherein: 20 (meV)<j<l<k<800 (meV).

6. The semiconductor laser device having a spin polarization layer according to claim 1, wherein: The spin polarization sublayer is GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlIn P, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond, Y2NiMnO6, SnO2, Mo6V9O 40 , any one or any combination of NaMnO2:Ti, LaAlO3, KTaO3, 2D-MoS2@3D-LiFePO4, 2D-WS2@3D-Ta2Pd3Se8, 2D-MnO3@3D-Ta2Pt3Se8, 2D-WTe2@3D-CoSe2, and 2D-CdSe@3D-CdS.

7. The semiconductor laser device having a spin polarization layer according to claim 1, wherein: The active layer is a periodic structure consisting of a well layer and a barrier layer, with the number of periods being 1 to 3. The well layer is any one or any combination of InGaN, InN, AlInN, and GaN, with a thickness of 10 to 100 angstroms. The barrier layer is any one or any combination of GaN, AlGaN, AlInGaN, AlN, and AlInN, with a thickness of 10 to 150 angstroms.

8. The semiconductor laser device having a spin polarization layer according to claim 1, wherein: The lower confinement layer is any one or any combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, and AlInN, with a thickness of 50 nm to 5000 nm and a Si doping concentration of 1E18 cm -3 to 1E20cm -3 ; The upper confinement layer is any one or any combination of GaN, AlGaN, AlInGaN, AlN, and AlInN, with a thickness of 20 nm to 1000 nm and a Mg doping concentration of 1E18 cm -3 to 1E20cm -3 .

9. The semiconductor laser device having a spin polarization layer according to claim 1, wherein: The lower waveguide layer and the upper waveguide layer are any one or any combination of GaN, InGaN, and AlInGaN, with a thickness of 50nm to 1000nm and a Si doping concentration of 1E16cm -3 to 5E19 cm -3 .

10. The semiconductor laser device having a spin polarization layer according to claim 1, wherein: The substrate includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x , sapphire / SiO2 / SiN x Composite substrate, any one of magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrates.

Images