Fin type structure array nanometer air channel diode

Abstract

The invention provides a fin-type structure array nano air channel diode, which comprises an insulating substrate, a fin-type structure cathode, a nano air channel, a fin-type structure anode and a metal support column, and is characterized in that a tip structure and surface nano structure modification are designed on the fin-type structure cathode, so that efficient field emission of electrons can be realized, and meanwhile, the field emission efficiency is improved. The fin-type structure cathode is fully surrounded by the fin-type structure anode, high-efficiency field emission electron collection is realized, and the diode with large field emission current is realized through the arrayed fin-type structure cathode and anode. According to the fin-type structure array nano air channel diode, high-speed response and ultra-large bandwidth can be obtained by utilizing the ballistic transport characteristic of electrons in a nano air channel, when the fin-type structure array nano air channel diode is used as a photodiode, light absorption can be enhanced by designing the size and periodic distribution of a fin-type structure cathode, high quantum efficiency is obtained, and the quantum efficiency is improved. And meanwhile, high-power and high-bandwidth millimeter wave / terahertz signals can be generated, and high-response and high-sensitivity photoelectric detection can be realized.

Description

Technical Field

[0001] The present invention relates to the technical field of diodes, and in particular to a fin-structure array nanometer air channel diode. Background Art

[0002] Diode technology is a core component of modern electronic technology, playing an indispensable role and being widely integrated into various electronic devices, including but not limited to computers, mobile phones, televisions, audio systems and communication equipment. Many key functions implemented within these devices, such as signal amplification, circuit switching control, and digital signal processing, are highly dependent on the precise operation and performance of the diode. Traditional vacuum diodes are bulky, consume a lot of power, and experience severe thermal expansion, making it difficult to integrate vacuum diodes into electronic devices. This limits the miniaturization and portability of the devices, and also restricts their widespread application in modern electronic devices. With the continuous development of semiconductor technology, semiconductor diode devices have gradually replaced vacuum tubes. Among them, nanometer air channel diodes, due to their excellent performance and reliable physical mechanism, are considered to be one of the core candidates for achieving performance breakthroughs and development of basic components in the post-Moore era.

[0003] Nano-air-channel devices are a novel device that combines vacuum electronics and microelectronics. They feature high-speed response, excellent electromagnetic field effects at both high and low temperatures, stable operation in radiation environments, and significant compatibility with planar processes, resulting in higher and faster response and field emission current. Electrons in the nano-air channel undergo ballistic transport at near-light speeds, significantly shortening the electron transit time to the picosecond level, resulting in low losses and high efficiency. Nano-air-channel diode structures are primarily categorized as horizontal and vertical. Horizontal nano-air-channel structures offer extremely low capacitance and greater compatibility with CMOS planar processes, making them more suitable for operation in high-frequency bands exceeding terahertz (THz) and even petahertz (PHz). However, currently reported horizontal nano-air-channel devices mostly employ tip-to-tip or tip-to-plane configurations. Electrons emitted from the cathode can sometimes strike the substrate or fly beyond the anode and be scattered by air molecules, resulting in low electron collection efficiency at the anode. Vertical nano-air-channel devices, on the other hand, offer simpler fabrication processes and greater accuracy and consistency in air channel dimensions. However, traditional vertical nano-air channel diodes require dielectric support between the cathode and anode, resulting in a small effective air channel area. Furthermore, electrons emitted by the cathode are partially absorbed by the dielectric support layer, resulting in low electron collection efficiency at the anode. In summary, currently reported horizontal and vertical nano-air channel diodes suffer from large electron loss, resulting in an uneven electric field distribution in space. The movement of a large number of electrons emitted by the cathode deviates from the anode's collection range, resulting in fewer electrons collected by the anode, a lower effective collection rate, and ultimately a low field emission current. Summary of the Invention

[0004] In response to the shortcomings of existing nano-air channel structures, the present invention proposes a fin-structured array nano-air channel diode, aiming to provide a vertical fin-structured nano-air channel diode that can effectively improve the electric field strength of the vertical nano-air channel diode, enhance the field emission current power and stability, and at the same time obtain a high-power mixing effect and realize high-sensitivity photoelectric detection.

[0005] A fin structure array nanometer air channel diode comprises an insulating substrate, a fin structure cathode, a nanometer air channel, a fin structure anode and metal pillars. A fin structure cathode is provided on the insulating substrate as an emitter, a fin structure anode is provided above the fin structure cathode, multiple fin structure anodes and fin structure cathodes are provided, and are evenly distributed and crossed with each other. The multiple fin structure anodes and fin structure cathodes constitute a fin structure array. Two metal pillars are extended from the left and right edges of the fin structure array and connected to the insulating substrate to support the fin structure anode so that it is suspended on the fin structure cathode, and a nanometer air channel is formed between the fin structure anode and the fin structure cathode.

[0006] Furthermore, the fin-structure cathode is used to generate electron field emission, and the fin-structure anode is used to receive the emitted electrons.

[0007] Furthermore, the insulating substrate material includes but is not limited to semiconductors, metals, metalloids, insulators, glass substrates, ceramic materials, two-dimensional materials and other new materials (such as diamond).

[0008] Furthermore, the cathode material of the fin structure is made of one of semiconductor, metal or metalloid, and the anode material of the fin structure is made of metal or metalloid; when two laser beams are irradiated onto the device electrode from the front, a high-frequency photocurrent is formed, which oscillates between the cathode and the anode to generate a high-power millimeter-wave terahertz signal, and the signal frequency is equal to the wavelength difference between the two lasers; when used as a photodiode, the anode is made of transparent conductive material, and when external light is irradiated onto the fin structure cathode, a millimeter-wave / terahertz signal is generated.

[0009] Furthermore, the nanometer air channel diode adopts a vertical structure as a whole.

[0010] Furthermore, the anode and cathode materials are composed of heterogeneous films of different materials, and the film thickness ranges from a single atomic layer to 100 μm.

[0011] Furthermore, the shapes of the fin-structure anode and the fin-structure cathode include a dome, a triangular apex, and a rectangular top.

[0012] Furthermore, the length of the nano-air channel is less than the mean free path of electrons, thereby achieving ballistic transport of particles.

[0013] Furthermore, when the fin-structure anode is in a fully surrounding structure with respect to the fin-structure cathode, the contact area between the fin-structure cathode and the fin-structure anode is greatly increased, and the electric field and the field emission current are significantly improved.

[0014] Furthermore, when the fin-shaped anode adopts an array structure, the metal electric field and field emission current of the plurality of vertically interconnected fin-shaped structures are superimposed to obtain a multiplied electric field and field emission current.

[0015] Furthermore, the fin structure cathode is set to a negative bias, and the fin structure anode is set to a positive bias. A voltage difference is formed between the fin structure anode and the fin structure cathode, which attracts electrons in the fin structure cathode to generate field emission current under the action of a large electric field. The electrons pass through the nano-air channel and enter the fin structure anode to be absorbed, thereby obtaining a large electric field and a large field emission current. The current is more concentrated at the circular tip of the anode, and the electric field and field emission current are larger.

[0016] The present invention proposes a fin-structure array nano-air channel diode, which is designed with a nano-air channel in the shape of a vertical fin-structure cathode and a fin-structure anode intersecting each other, with a large contact area, which can greatly enhance the electric field strength and form a large field emission current. At the same time, the fin-structure anode fully surrounds the fin-structure cathode to achieve high-efficiency field emission electron collection, and realizes a diode with a large field emission current through the arrayed fin-structure cathode and anode. Due to the structural symmetry between the cathode and the anode, the electric field and field emission current formed in the nano-air channel are evenly distributed, have good stability, and are symmetrical. The cathode semiconductor material and the anode material can be replaced to achieve bidirectional conduction, breaking through the technical bottleneck of traditional semiconductor optical mixers and vacuum optical mixers, and realizing high-sensitivity photoelectric detection, and can also generate high-power, high-bandwidth millimeter-wave / terahertz signals. Specifically, the beneficial technical effects of the present invention are:

[0017] The nanometer air channel of the vertical fin structure cathode and anode circular tip grid cross shape has a circular anode tip protrusion, which forms a specific enhanced and concentrated electric field and field emission current in the nanometer air channel, eliminating the disadvantages of charge accumulation and induced discharge caused by the reduction of the electrode gap and the sharpening of the emission end, resulting in the dispersion and lack of concentration of the field emission current, the inability to ensure the accuracy and efficiency of the electric field and field emission current, and the resulting reduction in output.

[0018] The fin-structure cathode and the fin-structure anode of the present invention are fully surrounded by an embedded nano-air channel with a larger contact area, which can significantly increase the electric field and form a large field emission current. Since the cathode is embedded between the fully surrounded anodes, there is a uniform electric field distribution and field emission current in the entire nano-air channel, which is symmetrical. There is a very obvious electric field and current enhancement at the structural protrusion, which improves the defects of small field emission current and low field effect output by a single vertical nano-air channel, and obtains a good and stable field emission current result.

[0019] In the device of the present invention, the material selected for the fin structure cathode is a semiconductor, metal, or metalloid, and the fin structure anode material can be a metal or metalloid. The selected device materials are simple, and the fin structure anode material does not need to be doped, which makes it easy to manufacture. In addition, when used as a photodiode (photodetector), the anode can be made of a transparent conductive material. When light penetrates (or directly irradiates) the fin structure cathode, a photoresponse current is generated. The intensity of the current can be used to determine the intensity and other characteristics of the light signal.

[0020] In the device proposed by the present invention, the fin-structure cathode is not in direct contact with the fin-structure anode, but is embedded in each other with a nano-air channel in between, which has good heat dissipation and can withstand greater voltage, current and incident light intensity. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0022] Figure 1a This is a rectangular top cross-sectional view of a schematic structural diagram of a fin-structured array nanometer air channel diode based on a metal anode / semiconductor cathode / insulating substrate provided by an embodiment of the present invention;

[0023] Figure 1b This is a triangular apex cross-sectional view of a schematic structural diagram of a fin-structured array nanometer air channel diode based on a metal anode / semiconductor cathode / insulating substrate provided by an embodiment of the present invention;

[0024] Figure 1c This is a circular top cross-sectional view of a schematic structural diagram of a fin-structured array nanometer air channel diode based on a metal anode / semiconductor cathode / insulating substrate provided by an embodiment of the present invention;

[0025] Figure 1dThis is a three-dimensional side view of a schematic structural diagram of a fin-structured array nanometer air channel diode based on a metal anode / semiconductor cathode / insulating substrate provided by an embodiment of the present invention;

[0026] Figure 2a This is a side rectangular convex cross-sectional view of a structural schematic diagram of a nanometer air channel mixer with side protrusions based on a fin structure array of a metal anode / semiconductor cathode / insulating substrate provided by an embodiment of the present invention;

[0027] Figure 2b This is a side apex convex cross-sectional view of a schematic structural diagram of a nanometer air channel mixer with side protrusions based on a fin structure array of a metal anode / semiconductor cathode / insulating substrate provided by an embodiment of the present invention;

[0028] Figure 2c This is a side circular top convex cross-sectional view of a structural schematic diagram of a nanometer air channel mixer with side protrusions based on a fin structure array of a metal anode / semiconductor cathode / insulating substrate provided by an embodiment of the present invention;

[0029] Figure 2d This is a three-dimensional side view of a schematic structural diagram of a nanometer air channel mixer with side protrusions based on a fin structure array of a metal anode / semiconductor cathode / insulating substrate provided by an embodiment of the present invention;

[0030] Figure 3 This is a schematic cross-sectional view of a fully enclosed nanometer air channel photodetector in a fin-type structure array based on a metal anode / semiconductor cathode / insulating substrate, provided by an embodiment of the present invention;

[0031] Figure 4 A cross-sectional view of a fully enclosed nanometer air channel photodetector having a fin-type structure array based on a metal anode / semiconductor cathode / insulating substrate and having a rectangular convex side surface is provided in an embodiment of the present invention;

[0032] Figure 5 A cross-sectional view of a fully enclosed nanometer air channel photodetector having a side pointed ridge and a fin-shaped array based on a metal anode / semiconductor cathode / insulating substrate provided by an embodiment of the present invention;

[0033] Figure 6 A cross-sectional view of a fully enclosed nanometer air channel photodetector having a side dome protrusion and a fin-structure array based on a metal anode / semiconductor cathode / insulating substrate provided by an embodiment of the present invention;

[0034] Explanation of the reference numerals: 11-insulating substrate, 12-fin-structure anode, 13-fin-structure cathode, 14-metal pillar, 15-nanometer air channel, 16-charged particles, 17-electrode, 18-rectangular top, 19-triangular pointed top, 110-circular top, 21-continuous wave laser, 22-side rectangular protrusion, 23-side pointed top protrusion, 24-side circular protrusion, 31-ultrafast pulse laser, 32-fully surrounding wall. DETAILED DESCRIPTION

[0035] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0036] The present invention proposes a fin structure array nano air channel diode, which includes an insulating substrate 11, a fin structure cathode 13, a nano air channel 15, a fin structure anode 12 and a metal pillar 14. The fin structure cathode 13 is provided on the insulating substrate 11 as an emitter, and the fin structure anode 12 is provided above the fin structure cathode 13. There are multiple fin structure anodes 12 and fin structure cathodes 13, which are evenly distributed and cross-linked with each other. The multiple fin structure anodes 12 and fin structure cathodes 13 constitute a fin structure array. Two metal pillars 14 are extended on both sides of the left and right edges of the fin structure array and connected to the insulating substrate 11 to support the fin structure anode 12 suspended on the fin structure cathode 13, and a nano air channel 15 is formed between the fin structure anode 12 and the fin structure cathode 13.

[0037] The fin structure array nano air channel diodes in different situations are described in detail below.

[0038] Example 1

[0039] A fin-structured array nanometer air channel diode based on a metal anode / semiconductor cathode / insulating substrate, wherein the bottom rectangular parallelepiped is a 200μm thick SOI (Silicon-On-Insulator) as an insulating substrate 11, a semiconductor fin-structured cathode 13 is arranged on the insulating substrate 11, the cathode material is an n-type low-temperature grown GaAs semiconductor, the cathode length is 750nm, the width is 100nm, and the thickness is 1000nm, adjacent cathodes are evenly arranged at intervals of 200nm, and the bottom of the cathode is connected to the substrate, and on the n-type low-temperature grown GaAs semiconductor is a fin-structured anode 12, the anode material is Ti / Au, the anode length is 750nm, the width is 100nm, and the thickness is 1000nm, and it is evenly arranged at intervals of 200nm to cross the GaAs semiconductor fin-structured cathode 13, and the cathode tail plane configuration is designed to be a rectangular top 18, a triangular pointed top 19, and a circular top 110, respectively. Figure 1a 、 Figure 1b 、 Figure 1c As shown, two metal pillars 14 are extended from the left and right sides of the Ti / Au fin structure anode and connected to the SOI insulating substrate 11 to support the Ti / Au anode suspended on the low-temperature grown GaAs semiconductor fin structure cathode 13, and a nano-air channel is formed between the low-temperature grown GaAs semiconductor cathode and the Ti / Au anode, with a length of 0nm-50nm.

[0040] Three-dimensional side view Figure 1d As shown, the designed vertical cathode and anode fin structure nano-air channel has a large contact area, which can greatly enhance the electric field and form a large field emission current. Due to the structural symmetry between the cathode and the anode, the electric field and field emission current formed in the nano-air channel are evenly distributed, have good stability, and are symmetrical. The cathode semiconductor material and the anode material can be replaced. Due to the rectangular, triangular pointed top, and dome protrusion structure, a specific enhanced concentrated electric field and field emission current are formed in the nano-air channel.

[0041] The working process of the fin structure array nano air channel diode is as follows: a negative DC bias is set to connect to the cathode 13 of the low-temperature grown GaAs semiconductor fin structure, and a positive DC bias is set to connect to the anode 12 of the Ti / Au fin structure. Under the action of an external electric field, a voltage difference is formed between Ti / Au and the n-type low-temperature grown GaAs, which attracts charged particles 16 in the GaAs to overcome the surface potential barrier, pass through the nano air channel 15, enter the Ti / Au anode, and be absorbed by the anode.

[0042] Example 2

[0043] A fin array structure based on a metal anode / semiconductor cathode / insulating substrate has a nanometer air channel photoelectric mixer with side protrusions, that is, a diode as a mixer, and its structure is as follows: the bottom rectangular parallelepiped is a 200μm thick SOI (Silicon-On-Insulator) as an insulating substrate 11, and a fin structure is set on the insulating substrate 11 as a semiconductor cathode 13, the material is an n-type low-temperature grown GaAs semiconductor, with a length of 750nm, a width of 100nm, and a thickness of 1000nm. The electrodes are evenly arranged at intervals of 200nm, and the bottom of the cathode is connected to the substrate. On the n-type low-temperature grown GaAs semiconductor is a fin-structured Ti / Au anode 12. The fin-structured Ti / Au anode has a length of 750nm, a width of 100nm, and a thickness of 1000nm. It is evenly arranged with a 200nm interval and is crossed with the GaAs semiconductor fin-structured cathode 13. Rectangular, triangular, and dome-shaped structures, i.e., branches, are extended from the sides of the anode and cathode, respectively as side rectangular protrusions 22, side pointed top protrusions 23, and side circular protrusions 24, respectively. Figure 2a 、 Figure 2b 、 Figure 2c As shown, the branches between the anode and the cathode are cross-distributed and equidistant, and two metal pillars 14 are extended from the left and right sides of the Ti / Au fin structure anode 12 and connected to the SOI insulating substrate 11 to support the Ti / Au anode suspended on the low-temperature grown GaAs semiconductor fin cathode 13, and a nano air channel 15 is formed between the low-temperature grown GaAs semiconductor cathode and the Ti / Au anode, with a length of 0nm-50nm.

[0044] Three-dimensional side view Figure 2d As shown, the working process of the photoelectric mixer of the fin array structure of metal anode / semiconductor cathode / insulating substrate with a nano-air channel 15 protruding on the side is as follows: a DC bias negative bias is set to be connected to the low-temperature grown GaAs semiconductor fin structure cathode 13, and a DC bias positive bias is set to be connected to the Ti / Au fin structure anode 12. Two continuous wave lasers 21 with a wavelength near 850nm and a wavelength difference of millimeter wave band are irradiated on the device electrode from the front. After the light field is absorbed by the low-temperature grown GaAs semiconductor, a photoelectric effect is triggered, generating photogenerated carriers, that is, charged particles 16. A large number of electron-hole pairs generated drift outward from the cathode electrons under the external bias voltage, pass through the nano-air channel 15, and are absorbed by the Ti / Au anode, forming a high-frequency photocurrent, which oscillates between the cathode and the anode to generate a high-power millimeter-wave terahertz signal. The frequency of the terahertz signal is equal to the wavelength difference between the two continuous wave lasers.

[0045] Example 3

[0046] A fin-shaped array of fully enclosed nano-air channel photodetectors based on metal anode / semiconductor cathode / insulating substrate, that is, a diode as a photodetector, its cross-sectional view is as follows Figure 3 As shown, its structure is as follows: the bottom rectangular block is a 200μm thick SOI (Silicon-On-Insulator) as an insulating substrate 11, and a fin-shaped structure is set on the insulator as a semiconductor cathode 13. The material is an n-type low-temperature grown GaAs semiconductor with a length of 750nm, a width of 100nm, and a thickness of 1000nm. Adjacent cathodes are evenly arranged at intervals of 200nm. The bottom of the cathode is connected to the substrate. On the n-type low-temperature grown GaAs semiconductor is a transparent conductive material with a fin-shaped fully enclosed structure. The anode 12 is a material, and the full enclosure means that the anode completely surrounds the outside of the cathode to form a full enclosure wall 32, while the anodes of Examples 1 and 2 only surround the outer walls of the cathode on the left and right sides. The anode is 750nm long, 100nm wide, and 1000nm thick, and is evenly arranged with a 200nm interval to cross with the GaAs semiconductor fin structure cathode 13. Rectangular, triangular, and dome-shaped protrusion structures, i.e., branches, are extended from the inside of the anode and the side of the cathode, respectively as side rectangular protrusions 22, side pointed top protrusions 23, and side circular protrusions 24, as shown in FIG. Figure 4 、 Figure 5 、 Figure 6 As shown, the branches between the anode and the cathode are cross-distributed and equidistantly distributed, and two metal pillars 14 are drawn out on the left and right sides of the transparent conductive material fin structure anode 12 and connected to the SOI insulating substrate 11 to support the transparent conductive material anode suspended on the low-temperature grown GaAs semiconductor fin structure cathode 13. The anode and the cathode cross each other to form a nano air channel 15. Between the low-temperature grown GaAs semiconductor cathode and the transparent conductive material anode is the nano air channel 15, and its length is 0nm-50nm.

[0047] The operating process of this fully enclosed nano-air channel photodetector, a fin-structured array of metal anodes / semiconductor cathodes / insulating substrates, is as follows: a negative DC bias is connected to the low-temperature-grown GaAs semiconductor fin-structure cathode 13, and a positive DC bias is connected to the transparent conductive material fin-structure anode 12. Ultrafast pulsed laser light 31 is then used to illuminate the anode and cathode, triggering the photoelectric effect. When the laser photon energy exceeds the semiconductor band gap, the laser pulse excites the low-temperature-grown GaAs semiconductor fin-structure cathode 13 to generate electron-hole pairs, rapidly increasing the material's conductivity. Charged particles 16 flowing between the nano-air channels 15 generate transient current pulses (photocurrent). By measuring the current intensity, the intensity, frequency, time domain information, and other characteristics of the optical signal can be calculated, achieving the photodetection function. The excitation current also generates electromagnetic radiation pulses. The laser pulse duration is on the order of femtoseconds, and the spectrum of this pulse is in the terahertz band.

[0048] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the above embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A fin structure array nano air channel diode, characterized in that: The diode includes an insulating substrate, a fin structure cathode, a nano air channel, a fin structure anode and a metal pillar. The fin structure cathode is provided on the insulating substrate as an emitter, and the fin structure anode is provided above the fin structure cathode. There are multiple fin structure anodes and fin structure cathodes, which are evenly distributed and cross each other. The multiple fin structure anodes and fin structure cathodes constitute a fin structure array. Two metal pillars are led out on both sides of the left and right edges of the fin structure array and connected to the insulating substrate to support the fin structure anode to be suspended on the fin structure cathode. A nano air channel is formed between the fin structure anode and the fin structure cathode. The nano air channel diode adopts a vertical structure as a whole.

2. The fin structure array nanometer air channel diode according to claim 1, characterized in that: The fin-structure cathode is used to generate electron field emission, and the fin-structure anode is used to receive the emitted electrons.

3. The fin structure array nanometer air channel diode according to claim 1, wherein: The insulating substrate material includes one or more of a semiconductor, a metal, a metalloid, an insulator, a glass substrate, a ceramic material, a two-dimensional material and diamond.

4. The fin structure array nanometer air channel diode according to claim 1, wherein: The fin-type structure cathode material is made of one of semiconductors, metals or metalloids, and the fin-type structure anode material is made of metal or metalloids; when two laser beams are irradiated directly onto the device electrode, a high-frequency photocurrent is generated, which oscillates between the cathode and the anode to generate a high-power millimeter-wave terahertz signal, and the signal frequency is equal to the wavelength difference between the two lasers; when used as a photodiode, the anode is made of transparent conductive material, and when external light is irradiated onto the fin-type structure cathode, a millimeter-wave / terahertz signal is generated.

5. The fin structure array nanometer air channel diode according to claim 1, wherein: The anode and cathode materials are composed of heterogeneous films of different materials, and the thickness of the films ranges from a single atomic layer to 100 μm.

6. The fin structure array nanometer air channel diode according to claim 1, wherein: The shapes of the fin-structure anode and the fin-structure cathode include a dome, a triangular apex, and a rectangular top.

7. The fin structure array nanometer air channel diode according to claim 1, wherein: The length of the nanometer air channel is less than the mean free path of electrons, thereby achieving particle ballistic transport.

8. The fin structure array nanometer air channel diode according to claim 1, wherein: When the fin-structure anode is in a fully surrounding structure with respect to the fin-structure cathode, the contact area between the fin-structure cathode and the fin-structure anode is increased, thereby improving the electric field and the field emission current.

9. The fin structure array nanometer air channel diode according to claim 1, wherein: When the fin-type anode adopts an array structure, the metal electric field and field emission current of the multiple vertical fin-type structures interconnected are superimposed to obtain a multiplied electric field and field emission current.

10. The fin structure array nanometer air channel diode according to claim 1, wherein: The fin structure cathode is set to a negative bias, and the fin structure anode is set to a positive bias. A voltage difference is formed between the fin structure anode and the fin structure cathode, which attracts electrons in the fin structure cathode to generate field emission current under the action of a large electric field. The electrons pass through the nano-air channel and enter the fin structure anode to be absorbed, resulting in a large electric field and a large field emission current. The current is more concentrated at the circular tip of the anode, and the electric field and field emission current are larger.

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