Double-temperature-zone low-temperature electrostatic adsorption thin film deposition wafer heater

Abstract

The invention discloses a double-temperature-zone low-temperature electrostatic adsorption thin film deposition wafer heater, which comprises a heater disc body, an insulating separator, a heater back plate, a base, a flow path leading-out piece and a radio frequency electrode, the heater disc body is a metal disc body provided with an insulating film; at least two flow channels corresponding to the liquid flow paths are arranged in the heater plate body; the liquid flow path is led out of the thin film deposition cavity through the flow path leading-out piece; the metal disc body is electrically connected with a radio frequency power supply and an electrostatic adsorption power supply through the radio frequency electrodes respectively; and the lower end of the base is connected with a lifting driving device. The flat flow channel is suitable for the PECVD process, the working temperature is 160-250 DEG C, heating and temperature control are carried out in a mode that hot oil exchanges heat in the flat flow channel, the problem that in the PECVD process, the temperature of a plate body of a heater continuously rises after radio frequency is started is solved, the temperature of the plate body can be controlled to fluctuate within the range of + / -1 DEG C at the low working temperature, and the stability of the process is met.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor processing equipment, and in particular to a dual-temperature-zone low-temperature electrostatically adsorbable thin-film deposition wafer heater.

[0002] With the large-scale application of advanced packaging, the demand for ultra-thick SiO2 (over 30 microns) is increasing. To achieve faster deposition rates, plasma-enhanced chemical vapor deposition (PECVD) processes can reduce reaction temperatures to 180°C. Currently, wafer heaters used in CVD chambers typically utilize heating wires within a ceramic base. Once the PECVD process begins, plasma sputtering and reaction exotherm cause the heater to struggle to maintain a constant temperature of 180°C, rising to over 210°C. This results in significant process instability. Furthermore, as film thickness increases, wafer warpage worsens, requiring the heater to electrostatically hold the wafer. However, some existing electrostatic chucks (ESCs) lack the integrated lift and lowering capabilities of CVD wafer heaters. Therefore, maintaining stable temperature control at lower operating temperatures during the PECVD process while maintaining static wafer retention and preventing warpage through electrostatic chucks remains a pressing challenge. Summary of the Invention

[0003] In view of this, one of the purposes of the present invention is to adopt a liquid flow path in the heater to heat the oil for heating and temperature control, so as to solve the problem of continuous heating of the heater after the radio frequency is turned on in the PECVD process. On the other hand, the present invention sets the heater disk as a metal disk coated with an insulating film, and electrically connects it to a high-voltage electrostatic power supply to provide the high-voltage electrostatic potential required for electrostatic adsorption.

[0004] Based on the above objectives, the present invention provides, on one hand, a dual-temperature-zone, low-temperature, electrostatically adsorbable thin film deposition wafer heater, the thin film deposition wafer heater being used to heat a wafer in a thin film deposition chamber, the thin film deposition wafer heater comprising a heater plate, an insulating spacer, a heater back plate, a base, a flow path lead-out member, and a radio frequency electrode; The heater disc is a metal disc provided with an insulating film; at least two flow channels corresponding to liquid flow paths are provided inside the heater disc, and the liquid flow paths are used to control the temperature and heat the heater disc through hot oil; The liquid flow path is led out of the thin film deposition chamber through a flow path lead-out member; the metal disk is electrically connected to a radio frequency power supply and an electrostatic adsorption power supply respectively through radio frequency electrodes; the radio frequency power supply and the electrostatic adsorption power supply are arranged outside the thin film deposition chamber; The heater disc, insulating spacer, heater back plate and base are arranged and fixed in sequence from top to bottom; the base is sleeved outside the flow path lead-out piece and the radio frequency electrode; the lower end of the base is located outside the thin film deposition chamber; the lower end of the base is connected to a lifting drive device.

[0005] Preferably, the at least two liquid flow paths include a first liquid flow path and a second liquid flow path; the flow channel corresponding to the first liquid flow path is arranged in the middle part of the heater disk; the flow channel corresponding to the second liquid flow path is arranged at the edge of the heater disk.

[0006] Preferably, the flow channel is a flat flow channel.

[0007] Preferably, a flow path interface corresponding to the liquid flow path is provided on the back of the heater disk; the flow path interfaces corresponding to the same liquid flow path are arranged adjacent to each other; and the liquid flow path is arranged in a manner of folding back along the original path.

[0008] Preferably, the insulating isolation member includes an insulating partition, a middle gasket, an edge gasket and a bolt gasket; the insulating partition is used for insulation isolation between the heater disk and the heater back plate; the heater disk, the insulating partition and the heater back plate are fixedly connected by bolts; a flow path connection area is provided between the heater disk and the flow path lead-out member; the flow path connection area corresponding to the first liquid flow path is formed by the middle gasket; the flow path connection area corresponding to the second liquid flow path is formed by the edge gasket and the heater back plate; the middle gasket and the edge gasket are respectively fixedly connected to the heater disk by bolts; a drainage channel is provided in the heater back plate to divert the second liquid flow path from the edge gasket to the middle.

[0009] Preferably, the flow path lead-out piece includes a lead-out piece interface disc and a lead-out pipeline; the lead-out piece interface disc is arranged on the lower end surface of the middle part gasket; the lead-out piece interface disc and the middle part gasket are respectively provided with through holes allowing the RF electrode to pass through; an opening smaller than the lead-out piece interface disc is provided at the central axis of the heater back plate, and the lead-out pipeline and the RF electrode pass through the opening.

[0010] Preferably, through holes for arranging ejector pins are formed on the heater disc, the insulating partition and the heater back plate; and in the heater disc, the layout of the liquid flow path avoids the position of the through holes.

[0011] Preferably, one end of the RF electrode is electrically connected to the heater disk, and the other end of the RF electrode extends outside the thin film deposition chamber; the outer side of the RF electrode is covered with a Teflon insulation layer; the electrostatic adsorption power supply includes a low-pass signal filter and a high-voltage DC power supply, and the high-voltage DC power supply is electrically connected to the RF electrode through the low-pass signal filter.

[0012] Preferably, sealing rings are respectively provided between the heater disc, the insulating spacer, the heater back plate and the base.

[0013] Preferably, a thermocouple is provided on the heater disk, and the thermocouple is used to measure the temperature of the heater disk in real time.

[0014] In summary, the present invention has the following beneficial effects: (1) The present invention is applicable to the PECVD process, and the operating temperature is 160℃~250℃. Since hot oil is used in the flat flow channel for heat exchange to control the temperature, the problem of the heater disc continuously heating after the radio frequency is turned on in the PECVD process is solved. The disc temperature fluctuation can be controlled within the range of ±1℃ at a lower operating temperature, thus meeting the process stability. (2) The present invention adopts independent liquid flow paths in the inner and outer layers of the edge / middle part to achieve dual-zone temperature control, making the temperature distribution of the heater disk more uniform; (3) The heater disk of the present invention is an aluminum-based ceramic coating disk, which is connected to the radio frequency signal of the radio frequency electrode and the high-voltage electrostatic potential of the electrostatic adsorption power supply at the same time. The heater can move up and down in the vacuum thin film deposition chamber, which is suitable for the process requirements of PECVD and can also realize the electrostatic adsorption function to avoid warping of the wafer during the coating process. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0016] Figure 1A and 1B Schematic diagram of the structure of an embodiment of the present invention; Figures 2A to 2C A schematic structural diagram of a heater disk according to an embodiment of the present invention; Figure 3A and 3B This is a schematic structural diagram of a flow path outlet according to an embodiment of the present invention; Figure 4A and 4B This is a schematic structural diagram of an insulating partition according to an embodiment of the present invention; Figure 5A and 5B A schematic diagram of the structure and layout of a bolt gasket according to an embodiment of the present invention; Figure 6A and 6BA schematic structural diagram of a middle gasket and an edge gasket according to an embodiment of the present invention; Figures 7A to 7C A schematic structural diagram of a heater back plate according to an embodiment of the present invention; Figure 8 Schematic diagram of the structure of the radio frequency electrode according to an embodiment of the present invention; Figure 9 Schematic diagram of the electrostatic adsorption principle of an embodiment of the present invention; Figure 10A and 10B Schematic diagram of the structure of the base according to an embodiment of the present invention. DETAILED DESCRIPTION

[0017] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0018] In the description of the present invention, it should be understood that the terms "side", "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like to indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, or the relative orientations or relative positional relationships relative to a certain component, are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore should not be understood as limiting the present invention.

[0019] In addition, the terms "first", "second", etc. are used for descriptive purposes only and cannot be understood as indicating or suggesting relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, the meaning of "multiple" is two or more, unless otherwise clearly and specifically defined.

[0020] Figure 1A and 1B The structure of the thin film deposition wafer heater of this embodiment is shown, including a heater plate 1, an insulating spacer, a heater back plate 4, a base 5, a flow path lead-out member 6 and a radio frequency electrode 7; like Figures 2A to 2C As shown, the heater disk 1 is a metal disk with an insulating film on the surface, and flow channels corresponding to the first liquid flow path 8a and the second liquid flow path 8b are provided inside the disk; Figure 2C As shown, the flow channel of the first liquid flow path 8a is set in the middle part of the heater disk body 1, and the flow channel of the second liquid flow path 8b is set at the edge part of the heater disk body 1. The two liquid flow paths 8a / 8b can use hot oil to independently control the temperature and heat the heater disk body 1. For example, the second liquid flow path 8b can be set to have a higher hot oil flow rate to compensate for the higher heat loss at the edge, thereby achieving dual-zone temperature control to meet the zoning temperature control requirements of PECVD; since hot oil maintains a constant temperature through heat exchange, in the PECVD process flow, if the plasma reaction generates more heat, the hot oil can also take away this part of the excess heat, thereby controlling the disk temperature within ±1°C, meeting the process stability, and solving the problem of the heater continuing to heat up after the radio frequency is turned on in the PECVD process. The flow channels corresponding to the first liquid flow path 8a and the second liquid flow path 8b are both flat flow channels with a larger width and a smaller thickness. On the one hand, it can increase the contact area between the hot oil and the heater disk body 1, and on the other hand, it can also reduce the thickness of the heater disk body 1; as shown Figure 2B As shown, the back of the heater disk 1 is provided with flow path interfaces corresponding to the first and second liquid flow paths 8a and 8b, electrical connection interfaces for the RF electrodes 7, bolt fixing holes, and holes for thermocouples, for making corresponding connections. The flow path interfaces corresponding to the same liquid flow path are located adjacent to each other, and the flow path is arranged in a folded-back manner. That is, the flow path passes from one flow path interface to the middle section of the flow path, then turns 180° in the middle section and then folds back in the opposite direction from the side of the first half of the path to the next flow path interface. This ensures that the hot oil flows in the flow path, from the vicinity of the inlet and outlet to the middle section, in a sequentially matched manner. Even if there is a temperature difference between the hot oil at the inlet and outlet (usually several degrees Celsius), the high and low temperatures of the two parallel flow paths can be compensated for, further ensuring temperature uniformity. In a preferred embodiment, a thermocouple can be installed on the heater disk 1 to monitor its real-time temperature. In a preferred embodiment, the heater disk 1 is an aluminum-based ceramic-coated disk, that is, the metal portion of the heater disk 1 is made of aluminum alloy, and the insulating film is a ceramic film.

[0021] The insulating isolation member includes an insulating partition 2, a middle gasket 3a, an edge gasket 3b and a bolt gasket 3c; the insulating partition 2 made of ceramic material and the heater back plate 4 made of aluminum alloy are sequentially arranged below the heater disk 1, and the insulating partition 2 is used for insulating and isolating between the heater back plate 4 and the heater disk 1; the heater disk 1 and the heater back plate 4 sandwich the insulating partition 2 in the middle and fix them by bolts; sealing rings are respectively provided between the heater disk 1 and the insulating partition 2, and between the insulating partition 2 and the heater back plate 4, so that the heater can be used in the vacuum environment of the thin film deposition chamber; the middle gasket 3a, the edge gasket 3b and a plurality of bolt gaskets 3c are arranged in the assembly formed by the heater disk 1, the insulating partition 2 and the heater back plate 4, and are used to cooperate with the insulating partition 2 to achieve insulating isolation. Figure 3A and 3B As shown, the flow path lead-out member 6 is made of stainless steel, and includes a lead-out member interface disk 6a and a lead-out pipeline 6b. The lead-out member interface disk 6a is arranged on the lower end surface of the middle liner 3a, and a through hole allowing the RF electrode 7 to pass through is provided at the central axis position of the lead-out member interface disk 6a (the protrusion on the edge of the through hole can be used to set the electrical connection line corresponding to the thermocouple), and the lead-out member interface disk 6a is also provided with flow path interfaces corresponding to the first liquid flow path 8a and the second liquid flow path 8b; the lead-out pipeline 6b is used to lead the hot oil in the first liquid flow path 8a and the second liquid flow path 8b to the outside of the thin film deposition chamber respectively, and connect to the corresponding external flow path devices such as the liquid conveying device and the liquid heating device. Those skilled in the art can obtain the setting method of the external flow path device from other public information, which will not be repeated here.

[0022] In a preferred embodiment, the assembly formed by the heater plate 1, the insulating partition 2 and the heater back plate 4 is further provided with a through hole 9, which is used to set an ejector pin, through which the wafer can be placed on the heater plate 1 in a vertical direction or lifted to remove the wafer from the heater plate 1; Figure 2C As shown, in the heater disk 1 , the layout of the flow paths corresponding to the first liquid flow path 8 a and the second liquid flow path 8 b needs to avoid the position of the through hole 9 .

[0023] like Figure 4A and 4B As shown, the insulating spacer 2 is provided with openings 2a / 2b corresponding to the shapes of the middle gasket 3a and the edge gasket 3b; the insulating spacer 2 is also provided with two groups of 3+6 bolt through holes 2c in the inner and outer circles, the positions of which correspond to the positions of the bolt gaskets 3c. The shape and position distribution of the bolt gaskets 3c are shown in FIG. Figure 5A and 5BAs shown, nine bolts pass through the heater back plate 4, bolt gaskets 3c, and insulating spacer 2, and are fixedly connected to the bolt fixing holes on the back of the heater plate 1. The arc-shaped recesses on the three inner ring bolt gaskets 3c correspond to the shape of the outlet interface plate 6a. The flow path connection area between the flow path outlet 6 and the heater plate 1 is formed by the middle gasket 3a, the edge gasket 3b, and the heater back plate 4. Figure 6A and 6B As shown, the flow path connection area corresponding to the first liquid flow path 8a is formed by the middle gasket 3a, the upper end surface of the middle gasket 3a is connected to the flow path interface of the heater disk body 1, and the lower end surface of the middle gasket 3a is connected to the flow path interface of the flow path lead-out piece 6. The two through holes in the middle gasket 3a are aligned with the flow path interface to form a vertical flow path connection area; the flow path connection area corresponding to the second liquid flow path 8b is formed by the edge gasket 3b and the heater back plate 4. The flow path connection area first vertically passes through the edge gasket 3b, and then drains from the edge to the middle through the drainage channel 4a provided in the heater back plate 4. The upper end surface of the edge gasket 3b is connected to the heater disk body 1, and the lower end surface of the edge gasket 3b is connected to the upper surface of the heater back plate 4. The middle gasket 3a is also provided with a through hole at the center position to allow the RF electrode 7 to pass through, and as shown Figure 6A As shown, a flow path avoidance notch is further provided on the lower end surface of the middle gasket 3a (i.e., the connecting end surface of the middle gasket 3a and the flow path lead-out piece 6), which is used to avoid the flow path interface corresponding to the second liquid flow path 8b on the lead-out piece interface disk body 6a; the middle gasket 3a and the edge gasket 3b are respectively fixed to the heater disk body 1 by bolts to ensure that the flow path interface on the heater disk body 1 can be aligned with the position of the through hole set on the gasket.

[0024] like Figures 7A to 7C As shown, the heater back plate 4 is provided with two drainage channels 4a that drain from the edge to the middle. The edge end of the drainage channel 4a is located on the upper surface of the heater back plate 4, corresponding to the through hole on the edge gasket 3b; the middle end of the drainage channel 4a is located on the lower surface of the heater back plate 4, corresponding to the flow path interface corresponding to the second liquid flow path 8b on the lead-out interface disk 6a. An opening whose shape matches the lower end face of the middle gasket 3a is provided in the middle of the heater back plate 4. The opening has a protrusion 4b. The shape of the protrusion 4b corresponds to the flow path avoidance notch of the middle gasket 3a. The middle end of the drainage channel 4a is located at the protrusion 4b. The protrusion 4b is embedded between the middle gasket 3a and the lead-out interface disk 6a when the various components are assembled to form a thin film deposition wafer heater ( Figure 1B In the exploded view of the parts, in order to clearly show the various components, the display position of the heater disc 4 is staggered from its actual assembly position; during actual assembly, the flow channel lead-out member 6 does not pass through the opening in the middle of the heater disc 4).

[0025] like Figure 8 As shown, the outer side of the RF electrode 7 is covered with a Teflon insulation layer 10; the RF electrode 7 is set at the central axis of the thin film deposition wafer heater, passing through the heater back plate 4, the lead interface disk 6a and the middle part liner 3a; the first end of the RF electrode 7 is electrically connected to the heater disk 1; the second end of the RF electrode 7 is set outside the thin film deposition chamber. The second end of the RF electrode 7 is electrically connected to the RF power supply and the electrostatic adsorption power supply 11. Figure 9 As shown, the electrostatic adsorption power supply 11 includes a low-pass signal filter 12 and a high-voltage DC power supply 13; the high-voltage DC power supply 13 is electrically connected to the second end of the RF electrode 7 through the low-pass signal filter 12; the low-pass signal filter 12 is used to filter out interference from AC signals; during operation, the electrostatic adsorption power supply 11 applies a high-voltage electrostatic potential to the heater disk 1 through the RF electrode 7, thereby generating a high-voltage electrostatic field to charge the upper and lower surfaces of the wafer, and the wafer with the charged surface is further affected by the high-voltage electrostatic field and more reliably adheres to the heater disk 1, producing an electrostatic adsorption effect. The RF power supply is used to provide RF power to the upper electrode (RF electrode) and the heater disk 1 (wafer electrode) in the thin film deposition chamber so that the reaction gas generates plasma in the PECVD process; the RF power supply is used to generate a high-voltage electrostatic potential to the heater disk 1 through the RF electrode 7, thereby generating a high-voltage electrostatic field to charge the upper and lower surfaces of the wafer, and the wafer with the charged surface is further affected by the high-voltage electrostatic field to more reliably adhere to the heater disk 1, producing an electrostatic adsorption effect. Figure 9 Not shown in the figure, those skilled in the art can make corresponding settings with reference to the RF power supply settings of PECVD equipment in the prior art, which will not be described here.

[0026] like Figure 10A and 10B As shown, the base 5 is made of aluminum alloy and includes a lifting shaft housing 5a and a back plate bracket 5b. The lifting shaft housing 5a and the back plate bracket 5b are integrally formed. The back plate bracket 5b and the heater back plate 4 are fixedly connected by screws, and a sealing ring is provided between the two. The lifting shaft housing 5a is hollow and tubular, and the hollow portion is used to set the radio frequency electrode 7 and the lead-out pipe 6b. The lower end of the lifting shaft housing 5a is connected to a lifting drive device provided outside the thin film deposition chamber. The lifting drive device can control the lifting and lowering of the entire thin film deposition wafer heater in the thin film deposition chamber through the base 5, so as to accurately adjust the distance between the upper electrode of the thin film deposition chamber and the heater disk 1 during the PECVD process.

[0027] The thin film deposition wafer heater of this embodiment features low-temperature dual-zone temperature control and electrostatic adsorption capabilities, suitable for PECVD processes. Its operating temperature range is 160°C to 250°C. By using hot oil for heat exchange within a flat flow channel to control the temperature of the heater disc 1, the problem of the heater disc continuously heating up after RF activation in the PECVD process is resolved. The disc temperature fluctuation can be controlled within a ±1°C range at a relatively low operating temperature, ensuring process stability. Independent liquid flow paths, both inside and outside the edge / middle sections, achieve dual-zone temperature control, resulting in a more uniform temperature distribution on the heater disc 1. The heater disc 1 of this embodiment is an aluminum-based ceramic-coated disc. The plate serving as the wafer electrode is connected to an RF power source via an RF electrode 7 and is also electrically connected to an electrostatic adsorption power source 11, enabling electrostatic adsorption. Furthermore, unlike conventional electrostatic chucks, this embodiment of the thin film deposition wafer heater can move up and down within a vacuum thin film deposition chamber, enabling precise control of the spacing between the upper electrode and the heater disc 1.

[0028] The above description of the disclosed embodiments is intended to enable one skilled in the art to implement or use the present invention. Various modifications to these embodiments will be readily apparent to one skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention is not limited to the embodiments shown herein but is intended to conform to the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A dual-temperature zone low-temperature electrostatically adsorbable thin film deposition wafer heater, the thin film deposition wafer heater is used to heat a wafer in a thin film deposition chamber, characterized in that: It includes a heater disc, an insulating spacer, a heater back plate, a base, a flow path lead-out piece and a radio frequency electrode; The heater disc is a metal disc provided with an insulating film; at least two flow channels corresponding to liquid flow paths are provided inside the heater disc, and the liquid flow paths are used to control the temperature and heat the heater disc through hot oil; The liquid flow path is led out of the thin film deposition chamber through a flow path lead-out member; the metal disk is electrically connected to a radio frequency power supply and an electrostatic adsorption power supply respectively through radio frequency electrodes; the radio frequency power supply and the electrostatic adsorption power supply are arranged outside the thin film deposition chamber; The heater disc, insulating spacer, heater back plate and base are arranged and fixed in sequence from top to bottom; the base is sleeved outside the flow path lead-out piece and the radio frequency electrode; the lower end of the base is located outside the thin film deposition chamber; the lower end of the base is connected to a lifting drive device.

2. The thin film deposition wafer heater according to claim 1, wherein: The at least two liquid flow paths include a first liquid flow path and a second liquid flow path; the flow channel corresponding to the first liquid flow path is arranged in the middle part of the heater disk; the flow channel corresponding to the second liquid flow path is arranged at the edge part of the heater disk.

3. The thin film deposition wafer heater according to claim 1, wherein: The flow channel is a flat flow channel.

4. The thin film deposition wafer heater according to claim 1, wherein: A flow path interface corresponding to the liquid flow path is provided on the back of the heater disk; the flow path interfaces corresponding to the same liquid flow path are arranged adjacent to each other; and the liquid flow path is arranged in a manner of folding back along the original path.

5. The thin film deposition wafer heater according to claim 2, wherein: The insulating isolation member includes an insulating partition, a middle gasket, an edge gasket and a bolt gasket; the insulating partition is used for insulation isolation between the heater disk and the heater back plate; the heater disk, the insulating partition and the heater back plate are fixedly connected by bolts; a flow path connection area is provided between the heater disk and the flow path lead-out member; the flow path connection area corresponding to the first liquid flow path is formed by the middle gasket; the flow path connection area corresponding to the second liquid flow path is formed by the edge gasket and the heater back plate; the middle gasket and the edge gasket are respectively fixedly connected to the heater disk by bolts; a drainage channel is provided in the heater back plate to divert the second liquid flow path from the edge gasket to the middle.

6. The thin film deposition wafer heater according to claim 5, characterized in that: The flow path lead-out piece includes a lead-out piece interface disc and a lead-out pipeline; the lead-out piece interface disc is arranged on the lower end surface of the middle part gasket; the lead-out piece interface disc and the middle part gasket are respectively provided with through holes allowing the radio frequency electrode to pass through; an opening smaller than the lead-out piece interface disc is provided at the central axis of the heater back plate, and the lead-out pipeline and the radio frequency electrode pass through the opening.

7. The thin film deposition wafer heater according to claim 6, wherein: The heater disc, the insulating partition and the heater back plate are provided with through holes for arranging ejector pins; in the heater disc, the layout of the liquid flow path avoids the position of the through holes.

8. The thin film deposition wafer heater according to claim 1, wherein: One end of the RF electrode is electrically connected to the heater disk, and the other end of the RF electrode extends outside the thin film deposition chamber; the outer side of the RF electrode is covered with a Teflon insulation layer; the electrostatic adsorption power supply includes a low-pass signal filter and a high-voltage DC power supply, and the high-voltage DC power supply is electrically connected to the RF electrode through the low-pass signal filter.

9. The thin film deposition wafer heater according to claim 1, wherein: Sealing rings are respectively arranged between the heater disc, the insulating spacer, the heater back plate and the base.

10. The thin film deposition wafer heater according to claim 1, wherein: The heater disk is provided with a thermocouple, which is used to measure the temperature of the heater disk in real time.

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