Moire fringe-based photoetching alignment system and method
By combining the moiré fringe lithography alignment system with geometric imaging and moiré fringe precision alignment, the problems of insufficient lithography alignment accuracy and high complexity of interference alignment are solved, achieving high-precision, low-cost nanometer-level positioning, which is suitable for emerging technologies such as three-dimensional integrated circuits.
Patent Information
- Application Number
- CN202510957032.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2025-01-21
- Filing Date
- 2025-07-11
- Publication Date
- 2025-09-26
AI Technical Summary
Existing photolithography alignment technology is difficult to achieve sub-wavelength accuracy, and the interference alignment scheme is highly complex and costly, which cannot meet the high precision and low cost requirements of emerging technologies such as three-dimensional integrated circuits.
A lithography alignment system based on moiré fringe is adopted, which combines geometric imaging with moiré fringe precision alignment, uses complementary cross marks and telecentric lenses, and calculates position deviations through fast Fourier transform to achieve nanometer-level positioning.
It breaks through the optical diffraction limit, achieves 10-100 nanometer alignment accuracy, reduces system complexity and cost, is suitable for compact lithography machines, and improves alignment efficiency and robustness.