Preparation method of high-ductility DLC film

Abstract

The invention discloses a preparation method of a high-ductility DLC (Diamond Like Carbon) film, which comprises the following steps: preparing an original DLC film in a vacuum environment; injecting diborane gas into the surface of the original DLC film, and maintaining for a preset time; and enabling diborane on the surface of the original DLC film to react at a preset temperature, so as to form a boron-doped DLC film layer on the surface of the original DLC film, thereby obtaining the high-ductility DLC film. According to the technical scheme, the ductility of the DLC film can be effectively improved under the condition that the performance of the DLC film is not damaged, and the cost is low.

Description

Technical Field

[0001] The present invention relates to the technical field of thin film preparation, and in particular to a method for preparing a high-ductility DLC film. Background Art

[0002] As a rare material with excellent properties, DLC (Diamond-like Carbon) films are widely used in fields such as microelectronics, optoelectronics, and biomedicine. However, due to their inherent chemical inertness and extremely hard surface, DLC films often suffer from quality issues such as cracking and crazing during processing, which also limits their application range. Therefore, improving the ductility of DLC films has become a hot topic in DLC film research.

[0003] In the prior art, many methods have been proposed to enhance the ductility of DLC films, such as hydrogen annealing. Although these methods can improve the ductility of DLC films, the improvement in ductility comes at a certain cost and may also have a negative impact on other properties of the DLC film. Summary of the Invention

[0004] The purpose of the embodiments of the present invention is to provide a method for preparing a DLC film with high ductility, which can effectively improve the ductility of the DLC film without destroying the performance of the DLC film itself, and has low cost.

[0005] To achieve the above objectives, an embodiment of the present invention provides a method for preparing a highly ductile DLC film, comprising:

[0006] Prepare the original DLC film under vacuum environment;

[0007] Injecting diborane gas onto the surface of the original DLC film and maintaining it for a preset time;

[0008] At a preset temperature, diborane on the surface of the original DLC film is reacted to form a boron-doped DLC film layer on the surface of the original DLC film, thereby obtaining a high-ductility DLC film.

[0009] Furthermore, the preparation of the original DLC film under a vacuum environment specifically includes:

[0010] The substrate is placed in a vacuum chamber, and an original DLC film is prepared on the surface of the substrate by using a magnetron sputtering technology under a vacuum environment.

[0011] Furthermore, the flow rate of the diborane gas is 50 sccm.

[0012] Furthermore, the preset time is 10 minutes.

[0013] Furthermore, the preset temperature is 700°C.

[0014] Furthermore, the thickness of the boron-doped DLC film layer is 20 nm.

[0015] Compared to existing technologies, the present invention provides a method for preparing a highly ductile DLC film. First, a raw DLC film is prepared under a vacuum. Then, diborane gas is injected into the surface of the raw DLC film for a predetermined time. Finally, at a predetermined temperature, the diborane on the surface of the raw DLC film reacts to form a boron-doped DLC film layer on the surface of the raw DLC film, resulting in a highly ductile DLC film. This method effectively improves the ductility of the DLC film without compromising the film's inherent properties, and at a low cost. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 This is a flow chart of a preferred embodiment of a method for preparing a highly ductile DLC film provided by the present invention. DETAILED DESCRIPTION

[0017] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. All other embodiments obtained by ordinary technicians in this technical field based on the embodiments of the present invention without making any creative efforts shall fall within the scope of protection of the present invention.

[0018] The present invention provides a method for preparing a DLC film with high ductility. Figure 1 FIG. 1 is a flow chart of a preferred embodiment of a method for preparing a high-ductility DLC film provided by the present invention, wherein the method comprises steps S11 to S13:

[0019] Step S11, preparing an original DLC film under a vacuum environment;

[0020] Step S12: injecting diborane gas into the surface of the original DLC film and maintaining it for a preset time;

[0021] Step S13: At a preset temperature, the diborane on the surface of the original DLC film is reacted to form a boron-doped DLC film layer on the surface of the original DLC film to obtain a high-ductility DLC film.

[0022] In the specific implementation, first, an original DLC film is prepared under a vacuum environment; then, still under the vacuum environment, diborane (B2H6) gas is injected into the surface of the original DLC film, and the diborane gas injection is maintained at room temperature for a preset time; finally, at a preset temperature, the diborane on the surface of the original DLC film is reacted to form a boron-doped DLC film layer on the surface of the original DLC film, thereby obtaining a high-ductility DLC film.

[0023] It should be noted that by injecting diborane gas into the surface of the original DLC film and allowing it to react at a certain temperature, a boron-doped DLC film layer can be formed on the surface of the original DLC film. The boron atoms in the boron-doped DLC film layer have a certain chain structure. This chain structure can add a certain elasticity to the DLC film. Therefore, by introducing boron atoms, the ductility of the DLC film can be enhanced without destroying the properties of the DLC film itself.

[0024] In one optional embodiment, the preparing the original DLC film under a vacuum environment specifically includes:

[0025] The substrate is placed in a vacuum chamber, and an original DLC film is prepared on the surface of the substrate by using a magnetron sputtering technology under a vacuum environment.

[0026] Specifically, in combination with the above embodiments, when actually preparing the original DLC film, a vacuum chamber can be prepared, the substrate can be placed in the vacuum chamber, the vacuum environment can be maintained, and magnetron sputtering technology can be used to prepare and form the original DLC film on the surface of the substrate.

[0027] In one optional embodiment, the flow rate of the diborane gas is 50 sccm.

[0028] Specifically, in combination with the above embodiment, when diborane gas is injected into the surface of the original DLC film, the flow rate of the injected diborane gas is 50 sccm, that is, the embodiment of the present invention is to inject diborane gas into the surface of the original DLC film at a flow rate of 50 sccm.

[0029] In one optional embodiment, the preset time is 10 minutes.

[0030] Specifically, in combination with the above embodiment, when diborane gas is injected into the surface of the original DLC film, the injection of diborane gas is maintained for 10 minutes, that is, the embodiment of the present invention is to inject diborane gas into the surface of the original DLC film at a flow rate of 50 sccm, and continue the injection of diborane gas for 10 minutes at room temperature.

[0031] In one optional embodiment, the preset temperature is 700°C.

[0032] Specifically, in combination with the above embodiment, when the diborane on the surface of the original DLC film is reacted, the required reaction temperature is 700°C. That is, the embodiment of the present invention is to allow the diborane on the surface of the original DLC film to react at a temperature of 700°C to form a boron-doped DLC film layer on the surface of the original DLC film.

[0033] In one optional embodiment, the thickness of the boron-doped DLC film layer is 20 nm.

[0034] Specifically, in combination with the above embodiment, diborane on the surface of the original DLC film is reacted at a temperature of 700° C. to form a boron-doped DLC film layer with a thickness of 20 nm on the surface of the original DLC film.

[0035] Exemplarily, in combination with all the above embodiments, the implementation process of the present solution is described below through a specific embodiment, including: (1) preparing a vacuum chamber, placing a substrate in the vacuum chamber, and using magnetron sputtering technology to prepare and form an original DLC film on the surface of the substrate under a vacuum environment; (2) still under a vacuum environment, injecting diborane gas at a flow rate of 50 sccm into the surface of the original DLC film, and maintaining the diborane gas injection at room temperature for 10 minutes; (3) at a temperature of 700°C, allowing the diborane on the surface of the original DLC film to react to form a boron-doped DLC film layer with a thickness of about 20 nm on the surface of the original DLC film, thereby obtaining a high-ductility DLC film.

[0036] It should be noted that, through X-ray photoelectron spectroscopy testing, XPS (X-ray Photoelectron Spectroscopy) tests were performed on ordinary DLC films and boron-doped DLC films obtained using an embodiment of the present invention. The experimental results show that the proportion of boron atoms in the boron-doped DLC film to the total number of atoms is about 3%.

[0037] It should be noted that, through ductility testing: tensile tests were carried out on ordinary DLC films and boron-doped DLC films obtained using an embodiment of the present invention using a compression testing machine. The experimental results showed that in the boron-doped DLC film, the proportion of boron atoms in the total number of atoms was approximately 1% to 5%, and the ductility of the doped DLC film was about 10% higher than that of the ordinary DLC film.

[0038] In summary, the method for preparing a highly ductile DLC film provided by an embodiment of the present invention includes: first, preparing a raw DLC film under a vacuum environment; then, injecting diborane gas into the surface of the raw DLC film and maintaining the gas for a predetermined time; and finally, reacting the diborane on the surface of the raw DLC film at a predetermined temperature to form a boron-doped DLC film layer on the surface of the raw DLC film, thereby obtaining a highly ductile DLC film. The embodiment of the present invention can effectively improve the ductility of the DLC film without damaging the performance of the DLC film itself. The boron-doped DLC film obtained using the embodiment of the present invention has significantly improved ductility. Furthermore, the preparation process is simple, convenient, and low-cost, and has broad application prospects in the preparation and application of DLC films.

[0039] The above is only a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the technical principles of the present invention. These improvements and modifications should also be regarded as the scope of protection of the present invention.

Claims

1. A method for preparing a high-ductility DLC film, characterized in that: include: Prepare the original DLC film under vacuum environment; Injecting diborane gas onto the surface of the original DLC film and maintaining it for a preset time; At a preset temperature, diborane on the surface of the original DLC film is reacted to form a boron-doped DLC film layer on the surface of the original DLC film, thereby obtaining a high-ductility DLC film.

2. The method for preparing a highly ductile DLC film according to claim 1, wherein: The method of preparing the original DLC film under a vacuum environment specifically includes: The substrate is placed in a vacuum chamber, and an original DLC film is prepared on the surface of the substrate by using a magnetron sputtering technology under a vacuum environment.

3. The method for preparing a highly ductile DLC film according to claim 1, wherein: The flow rate of the diborane gas is 50 sccm.

4. The method for preparing a highly ductile DLC film according to claim 1, wherein: The preset time is 10 minutes.

5. The method for preparing a highly ductile DLC film according to claim 1, wherein: The preset temperature is 700°C.

6. The method for preparing a highly ductile DLC film according to claim 1, wherein: The thickness of the boron-doped DLC film layer is 20 nm.

Images