Method for preparing boron-phosphorosilicate glass through SACVD

Abstract

The invention belongs to the technical field of semiconductor material preparation, and provides a method for preparing boron-phosphorosilicate glass through SACVD, and the method comprises the following steps: placing a wafer on a heating plate of an SACVD device for heating, introducing reaction shielding gas into the SACVD device until the reaction pressure is reached, and keeping a stable state; introducing the gaseous reaction source into a tail gas treatment unit of the SACVD device and keeping a stable state; introducing a gaseous reaction source and an oxygen source into a reaction chamber of the SACVD device, and carrying out a deposition reaction in a state that the reaction pressure is stable and the gaseous reaction source is stable; after the deposition reaction is completed, a gaseous reaction source is introduced into a tail gas treatment unit of the SACVD device, the reaction is ended, and the boron-phosphorosilicate glass is obtained. The method provided by the invention solves the problem of transient instability of the starting / ending stage in the SACVD process, and further improves the stability of the prepared boron-phosphorosilicate glass.

Description

Technical Field

[0001] The invention belongs to the technical field of semiconductor material preparation, and relates to a method for preparing borophosphosilicate glass by SACVD. Background Art

[0002] Boron-phosphosilicate glass is a widely used dielectric material in semiconductor manufacturing, primarily for interlayer insulation and planarization. Sub-atmospheric chemical vapor deposition (SACVD), a CVD process performed at sub-atmospheric pressure (typically 50-600 Torr), is particularly well-suited for filling high-aspect-ratio structures. SACVD, which balances filling capacity, thermal budget, and uniformity in a sub-atmospheric pressure environment, is an indispensable process in advanced semiconductor manufacturing. With device miniaturization and the prevalence of 3D structures, SACVD technology optimization will continue to drive the development of semiconductor manufacturing.

[0003] CN103208414A discloses a method for removing scattered particles in borophosphosilicate glass films. After the borophosphosilicate glass deposition process, an inert gas is continuously introduced into the reaction chamber for a period of time to blow out the gas remaining in the reaction chamber, thereby purifying the process environment conditions in the reaction chamber. The device is then subjected to subsequent semiconductor manufacturing processes, thereby avoiding the problem of scattered particle defects caused by the borophosphosilicate glass process in SACVD.

[0004] CN111863705A discloses a method for forming isolation of a semiconductor device, which adopts SACVD to prepare borophosphosilicate glass as a sacrificial layer.

[0005] In the aforementioned scheme, the stability of borophosphosilicate glass prepared by SACVD is a challenge that needs to be addressed. Because SACVD is a thermal reaction, the start and end of the reaction cannot be precisely controlled like plasma-enhanced chemical vapor deposition, and the film thickness and BP content often fluctuate. Summary of the Invention

[0006] The object of the present invention is to provide a method for preparing borophosphosilicate glass by SACVD. The method of the present invention solves the transient instability problem in the start / stop stage of the conventional SACVD process by turning on and off the "transition" gas in the exhaust gas treatment unit, thereby improving the stability of the preparation of borophosphosilicate glass and further improving the uniformity of borophosphosilicate glass between sheets, which is conducive to the mass production of borophosphosilicate glass.

[0007] In order to achieve the purpose of the invention, the present invention adopts the following technical solutions:

[0008] In a first aspect, the present invention provides a method for preparing borophosphosilicate glass by SACVD, the method comprising the following steps:

[0009] Reaction pressure stabilization step: Place the wafer on the heating plate of the SACVD device for heating, and introduce reaction protection gas into the SACVD device until the reaction pressure is maintained at a stable state;

[0010] Gaseous reaction source stabilization step: introducing the gaseous reaction source into the tail gas treatment unit of the SACVD device and maintaining a stable state;

[0011] Deposition reaction step: introducing a gaseous reaction source and an oxygen source into the reaction chamber of the SACVD device, and performing a deposition reaction under the conditions where the reaction pressure and the gaseous reaction source are stable;

[0012] Deposition reaction termination step: After the deposition reaction is completed, the gaseous reaction source is introduced into the tail gas treatment unit of the SACVD device to terminate the reaction and obtain borophosphosilicate glass.

[0013] In the method described in the present invention, introducing reaction shielding gas into the SACVD device until the reaction pressure remains stable and introducing a gaseous reaction source into the tail gas treatment unit of the SACVD device to maintain a stable state are both stabilization steps. The main purpose is to introduce shielding gas to make the chamber reach the reaction pressure and maintain it stable, and to introduce the reaction source into the tail gas treatment device so that the flow rate and composition of the reaction source reach a stable state in the pipeline. Therefore, the two stabilization steps do not affect each other, and either step can be performed first. In order to shorten the time, the two steps can also be performed simultaneously.

[0014] In the method of the present invention, the gaseous reaction source is gasified by a liquid reaction source, and the flow rate of the liquid reaction source is controlled by a flow meter.

[0015] In the method described in the present invention, after the wafer is placed, the reaction protection gas is introduced to a sub-normal reaction pressure, which not only removes the air and moisture remaining in the chamber, prevents impurity gases from polluting subsequent reactions, reduces gas phase nucleation pollution in the initial stage, and avoids film defects, but also the stable chamber pressure can improve the uniformity of the film. Before the gaseous reaction source is stabilized, it is first introduced into the tail gas treatment unit, and the unstable gaseous reaction source is directly flowed to the tail gas treatment unit without being introduced into the reaction chamber, thereby avoiding pollution and uncertainty after thermal decomposition of the gaseous reaction source, allowing the gas flow and concentration of the reaction source to reach a stable state in the pipeline, ensuring the stability of the gaseous reaction source when entering the chamber, and avoiding the problem that the instantaneous flow and composition of the gaseous reaction source may be unstable due to sudden pressure changes or delayed response of the flow controller when the gaseous reaction source is just introduced, and directly introducing the gas into the chamber will cause uneven film thickness or composition fluctuations. In the reaction termination stage, the flow direction of the liquid source is controlled to control the end of the reaction, and the reaction source is cut back to the tail gas treatment unit. Unreacted gases are discharged through the tail gas treatment unit to prevent harmful gases from being retained in the chamber and corroding components, effectively avoiding the uncertainty of the liquid source participating in the reaction with unstable flow caused by the liquid source's inability to be shut down in time.

[0016] Preferably, the heating temperature is 400°C to 550°C, for example, 400°C, 420°C, 450°C, 500°C or 550°C.

[0017] Preferably, the reaction protection gas includes oxygen and / or nitrogen.

[0018] Preferably, the reaction pressure is 170 torr to 200 torr, for example, 170 torr, 175 torr, 180 torr, 185 torr, 190 torr or 200 torr, etc., and is not limited to the listed values. Other values ​​not listed within the numerical range are also applicable.

[0019] Preferably, the gaseous reaction sources include a gaseous silicon source, a gaseous phosphorus source and a gaseous boron source.

[0020] Preferably, the gaseous silicon source comprises silane and / or tetraethyl orthosilicate.

[0021] Preferably, the gaseous phosphorus source comprises trimethylphosphine and / or triethyl phosphate.

[0022] Preferably, the gaseous boron source comprises trimethylboron and / or triethyl borate.

[0023] Preferably, the flow rate of the gaseous silicon source is 700 mg / min~900 mg / min, for example: 700 mg / min, 750 mg / min, 800 mg / min, 850 mg / min or 900 mg / min, etc., not limited to the listed values, other unlisted values ​​within the numerical range are also applicable.

[0024] Preferably, the flow rate of the gaseous phosphorus source is 70 mg / min to 80 mg / min, for example, 70 mg / min, 72 mg / min, 75 mg / min, 78 mg / min or 80 mg / min, etc., and is not limited to the listed values. Other values ​​not listed within this numerical range are also applicable.

[0025] Preferably, the flow rate of the gaseous boron source is 200 mg / min~300 mg / min, for example: 200 mg / min, 220 mg / min, 250 mg / min, 280 mg / min or 300 mg / min, etc., not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0026] Preferably, the carrier gas of the gaseous reaction source includes argon and / or helium.

[0027] Preferably, the flow rate of the carrier gas of the gaseous reaction source is 2000 sccm to 4000 sccm, for example, 2000 sccm, 2500 sccm, 3000 sccm, 3500 sccm or 4000 sccm, etc., and is not limited to the listed values. Other values ​​not listed within the numerical range are also applicable.

[0028] Preferably, the time for introducing the gaseous reaction source into the tail gas treatment unit of the SACVD device in the gaseous reaction source stabilization step is 20s~40s, for example: 20s, 25s, 30s, 35s or 40s, etc., which is not limited to the listed values, and other unlisted values ​​within this numerical range are also applicable.

[0029] The time for introducing the gaseous reaction source into the tail gas treatment unit of the SACVD device described in the present invention is the time for introducing the gaseous reaction source before maintaining the gas stability in the tail gas treatment unit. The purpose is to stabilize the flow rate of the reaction source and then stabilize the flow rate of the gas after vaporization, thereby improving the uniformity of the borophosphosilicate glass obtained within the wafer.

[0030] Preferably, the carrier gas of the gaseous reaction source includes argon and / or helium.

[0031] Preferably, the oxygen source comprises oxygen and / or ozone.

[0032] Preferably, the flow rate of the oxygen source is 4000 sccm to 6000 sccm, for example, 4000 sccm, 4500 sccm, 5000 sccm, 5500 sccm or 6000 sccm, etc., and is not limited to the listed values. Other values ​​not listed within the numerical range are also applicable.

[0033] Preferably, during the deposition reaction, the mass percentage concentration of the oxygen source is 10% to 15%, for example, 10%, 11%, 12%, 13%, 14% or 15%, etc., and is not limited to the listed values. Other values ​​not listed within this range are also applicable.

[0034] Preferably, the deposition reaction time is 50s to 100s, for example, 50s, 60s, 70s, 80s, 90s or 100s, etc., and is not limited to the listed values. Other values ​​not listed within the numerical range are also applicable.

[0035] In the deposition reaction termination step, the gaseous reaction source is introduced into the tail gas treatment unit of the SACVD device, and the source flow meter of the gaseous reaction source is set to 0 sccm.

[0036] In the method described herein, the gaseous reaction source is vaporized from a liquid reaction source, the flow rate of which is controlled by a flowmeter. Therefore, the source flowmeter for the gaseous reaction source is set to 0 sccm, which also means that the flowmeter for the liquid reaction source is set to 0 sccm. After the deposition reaction is completed, the flowmeter for the liquid reaction source is set to 0 sccm. This causes the liquid source flow rate to slowly decrease, and this unstable liquid source entering the chamber can cause film instability. After the deposition reaction is completed, the present invention directly passes the reaction source into an exhaust gas treatment device. By controlling the flow direction of the liquid source, the deposition reaction is terminated, preventing this unstable liquid source from entering the chamber.

[0037] The present invention introduces a gaseous reaction source into the tail gas treatment unit of the SACVD device, and sets the flow rate of the liquid reaction source to 0 sccm. Due to the characteristics of the liquid reaction source, after the flow rate is set to 0 sccm, the flow rate slowly decreases, and it takes 6s to 7s to completely eliminate the flow rate. This part of the flow rate cannot be accurately controlled, so it is allowed to flow directly into the tail gas treatment device and discarded.

[0038] Preferably, during the process of introducing the gaseous reaction source into the tail gas treatment unit of the SACVD device in the deposition reaction termination step, an oxygen source is introduced into the SACVD device. After the deposition reaction is completed and the reaction source is stopped from entering the reaction chamber, the oxygen source reacts with the reaction source remaining in the chamber to prevent the residual liquid source from thermally decomposing and contaminating the film.

[0039] Preferably, after the flow rate of the oxygen source into the SACVD device reaches 0 sccm, all gas sources are turned off and the SACVD device is evacuated to obtain borophosphosilicate glass.

[0040] In a second aspect, the present invention provides an application of the method described in the first aspect, wherein the method is used for batch production of borophosphosilicate glass.

[0041] The borophosphosilicate glass prepared by the method of the present invention has high uniformity and can be used for mass production of borophosphosilicate glass, and the mass production has high stability.

[0042] Compared with the prior art, the present invention has the following beneficial effects:

[0043] (1) The method of the present invention solves the transient instability problem in the start / stop stage of the SACVD process by switching the gas on and off in the tail gas treatment unit, thereby improving the stability of the borophosphosilicate glass preparation.

[0044] (2) The method of the present invention can improve the uniformity of borophosphosilicate glass between sheets, which is beneficial to the mass production of borophosphosilicate glass. DETAILED DESCRIPTION

[0045] The technical solution of the present invention is further described below by way of specific embodiments. It should be understood by those skilled in the art that the embodiments are merely to help understand the present invention and should not be regarded as specific limitations of the present invention.

[0046] Example 1

[0047] This embodiment provides a method for preparing borophosphosilicate glass by SACVD, the method comprising the following steps:

[0048] (1) Place the wafer on the heating plate of the SACVD device and heat it to 480°C. Introduce oxygen into the SACVD device until the pressure reaches 185 torr and maintain a stable state;

[0049] (2) The liquid reaction sources tetraethyl orthosilicate, triethyl phosphate and triethyl borate were vaporized and mixed with helium and introduced into the tail gas treatment unit of the SACVD device for 30 seconds. The flow rate of tetraethyl orthosilicate was 800 mg / min, the flow rate of triethyl phosphate was 73 mg / min, the flow rate of triethyl borate was 250 mg / min, and the flow rate of helium was 3000 sccm.

[0050] (3) A mixture of a gaseous reaction source that has reached a stable state and helium is introduced into the reaction chamber of the SACVD device, and ozone is introduced to perform a deposition reaction for 80 seconds. The ozone flow rate is 5000 sccm, and the mass percentage concentration of ozone during the deposition reaction is 12.5%;

[0051] (4) After the deposition reaction is completed, the mixed gas of the gaseous reaction source and helium is introduced into the tail gas treatment unit of the SACVD device. The flow rate of the flow meter of the liquid reaction source is set to 0 sccm. Ozone is continuously introduced into the SACVD device. When the content of tetraethyl orthosilicate, triethyl phosphate and triethyl borate in the reaction chamber drops to 0, all gas sources are turned off, the SACVD device is evacuated, and the wafer loaded with borophosphosilicate glass is taken out.

[0052] Example 2

[0053] This embodiment provides a method for preparing borophosphosilicate glass by SACVD, the method comprising the following steps:

[0054] (1) Place the wafer on the heating plate of the SACVD device and heat it to 400°C. Introduce oxygen into the SACVD device until the pressure reaches 170 torr and maintain a stable state;

[0055] (2) The liquid reaction sources tetraethyl orthosilicate, triethyl phosphate and triethyl borate were vaporized and mixed with helium and introduced into the tail gas treatment unit of the SACVD device for 40 seconds. The flow rate of tetraethyl orthosilicate was 700 mg / min, the flow rate of triethyl phosphate was 70 mg / min, the flow rate of triethyl borate was 200 mg / min, and the flow rate of helium was 2000 sccm.

[0056] (3) A mixture of a gaseous reaction source that has reached a stable state and helium is introduced into the reaction chamber of the SACVD device, and ozone is introduced for a deposition reaction for 100 seconds. The ozone flow rate is 4000 sccm, and the mass percentage concentration of ozone during the deposition reaction is 10%;

[0057] (4) After the deposition reaction is completed, the mixed gas of the gaseous reaction source and helium is introduced into the tail gas treatment unit of the SACVD device. The flow rate of the flow meter of the liquid reaction source is set to 0 sccm. Ozone is continuously introduced into the SACVD device. When the content of tetraethyl orthosilicate, triethyl phosphate and triethyl borate in the reaction chamber drops to 0, all gas sources are turned off, the SACVD device is evacuated, and the wafer loaded with borophosphosilicate glass is taken out.

[0058] Example 3

[0059] This embodiment provides a method for preparing borophosphosilicate glass by SACVD, the method comprising the following steps:

[0060] (1) Place the wafer on the heating plate of the SACVD device and heat it to 550°C. Introduce oxygen into the SACVD device until the pressure reaches 200 torr and maintain a stable state;

[0061] (2) The liquid reaction sources tetraethyl orthosilicate, triethyl phosphate and triethyl borate were vaporized and mixed with helium and introduced into the tail gas treatment unit of the SACVD device for 20 seconds. The flow rate of tetraethyl orthosilicate was 900 mg / min, the flow rate of triethyl phosphate was 80 mg / min, the flow rate of triethyl borate was 300 mg / min, and the flow rate of helium was 4000 sccm.

[0062] (3) A mixture of a gaseous reaction source that has reached a stable state and helium is introduced into the reaction chamber of the SACVD device, and ozone is introduced to perform a deposition reaction for 50 seconds. The ozone flow rate is 6000 sccm, and the mass percentage concentration of ozone during the deposition reaction is 15%;

[0063] (4) After the deposition reaction is completed, the mixed gas of the gaseous reaction source and helium is introduced into the tail gas treatment unit of the SACVD device. The flow rate of the flow meter of the liquid reaction source is set to 0 sccm. Ozone is continuously introduced into the SACVD device. When the content of tetraethyl orthosilicate, triethyl phosphate and triethyl borate in the reaction chamber drops to 0, all gas sources are turned off, the SACVD device is evacuated, and the wafer loaded with borophosphosilicate glass is taken out.

[0064] Example 4

[0065] The only difference between this embodiment and embodiment 1 is that the maintenance time in step (2) is 10 seconds, and the other conditions and parameters are exactly the same as those in embodiment 1.

[0066] Example 5

[0067] The only difference between this embodiment and embodiment 1 is that the mass percentage concentration of ozone in step (3) is 5%, and the other conditions and parameters are exactly the same as those in embodiment 1.

[0068] Example 6

[0069] The only difference between this embodiment and embodiment 1 is that the mass percentage concentration of ozone in step (3) is 20%, and the other conditions and parameters are exactly the same as those in embodiment 1.

[0070] Example 7

[0071] The only difference between this embodiment and embodiment 1 is that ozone is not introduced in step (4), and the other conditions and parameters are exactly the same as those in embodiment 1.

[0072] Comparative Example 1

[0073] The only difference between this comparative example and Example 1 is that step (4) does not switch to the tail gas treatment unit, and the flow rate of the gaseous reaction source obtained by directly vaporizing tetraethyl orthosilicate, triethyl phosphate, and triethyl borate and mixing them with helium is adjusted to 0 sccm. The other conditions and parameters are exactly the same as those in Example 1.

[0074] Performance testing:

[0075] The obtained borophosphosilicate glass was tested. After the borophosphosilicate glass was obtained by the method of each embodiment and comparative example, the chamber was cleaned and the above borophosphosilicate glass preparation and cleaning were repeated. That is, five groups of borophosphosilicate glass were prepared using the same process conditions. The five groups of borophosphosilicate glass prepared in each embodiment and comparative example were tested. The thickness and uniformity of each group of borophosphosilicate glass were measured using an ellipsometer, and the BP content was measured using an FTIR (Fourier Transform Infrared Spectrometer). The five preparation processes for each embodiment simulated the actual production of batch borophosphosilicate glass. Based on the test results of the five groups of borophosphosilicate glass, the film thickness uniformity and composition uniformity of the thin film between wafers can be obtained. The uniformity is calculated using square difference within the wafer and square difference between wafers. The inter-wafer film thickness uniformity = standard deviation / average value, that is, U% = STD / AVG. The thickness uniformity of a single wafer was directly measured by ellipsometer. The test results are shown in Table 1:

[0076] Table 1

[0077]

[0078] As can be seen from Table 1, according to Examples 1-7, the inter-sheet film thickness uniformity of the borophosphosilicate glass obtained by the method of the present invention can reach within 1.01%, the average single-sheet film thickness uniformity can reach within 1.13%, the phosphorus element uniformity can reach within 3.03%, and the boron element uniformity can reach within 2.76%. By adjusting the preparation conditions, the inter-sheet film thickness uniformity of the borophosphosilicate glass obtained can reach within 0.44%, the average single-sheet film thickness uniformity can reach within 0.5%, the phosphorus element uniformity can reach within 0.63%, and the boron element uniformity can reach within 0.61%.

[0079] By comparing Example 1 with Example 4, it can be seen that in the SACVD method for preparing borophosphosilicate glass of the present invention, the time for introducing the gaseous reaction source (tetraethyl orthosilicate, triethyl phosphate and triethyl borate) in step (2) will affect the uniformity of the prepared borophosphosilicate glass. When the time for introducing the gaseous reaction source in step (2) is controlled within 20s~40s, the uniformity of the prepared borophosphosilicate glass is better. If the time for introducing the gaseous reaction source is too short, the flow rate of the reaction source cannot be stabilized, and the flow rate of the gas after vaporization cannot be stable, which directly affects the uniformity between sheets.

[0080] By comparing Example 1 with Examples 5-6, it can be seen that in the SACVD method for preparing borophosphosilicate glass of the present invention, during the deposition reaction in step (3), the concentration of the oxygen source will affect the stability of the prepared borophosphosilicate glass. When the concentration of the oxygen source is controlled at 10% to 15%, the stability of the prepared borophosphosilicate glass is better. If the concentration of the oxygen source is too low, the reaction is incomplete and the uniformity is poor. If the concentration of the oxygen source is too high, the reaction is too fast, an uneven film layer is generated, the density of the film is reduced, and the stress is increased, causing the film glass to peel off.

[0081] From the comparison between Example 1 and Example 7, it can be seen that in the SACVD method for preparing borophosphosilicate glass of the present invention, the continuous introduction of the oxygen source in step (4) can treat the gaseous reaction source remaining in the chamber. If the oxygen source is not introduced, the particles of the borophosphosilicate glass will be significantly deteriorated.

[0082] By comparing Example 1 and Comparative Example 1, it can be seen that in the reaction termination stage, the present invention controls the end of the reaction by controlling the flow direction of the liquid source, cuts the reaction source back to the tail gas treatment unit, and slowly reduces the flow rate, thereby avoiding the instability of the film thickness and BP content caused by the uncertainty of the liquid source participating in the reaction due to the unstable flow caused by the liquid source's inability to be closed in time.

[0083] The above description is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Those skilled in the art should understand that any changes or substitutions that can be easily thought of by those skilled in the art within the technical scope disclosed by the present invention fall within the protection scope and disclosure scope of the present invention.

Claims

1. A method for preparing borophosphosilicate glass by SACVD, characterized in that: The method comprises the following steps: Reaction pressure stabilization step: Place the wafer on the heating plate of the SACVD device for heating, and introduce reaction protection gas into the SACVD device until the reaction pressure is maintained at a stable state; Gaseous reaction source stabilization step: introducing the gaseous reaction source into the tail gas treatment unit of the SACVD device and maintaining a stable state; Deposition reaction step: introducing a gaseous reaction source and an oxygen source into the reaction chamber of the SACVD device, and performing a deposition reaction under the conditions where the reaction pressure and the gaseous reaction source are stable; Deposition reaction termination step: After the deposition reaction is completed, the gaseous reaction source is introduced into the tail gas treatment unit of the SACVD device to terminate the reaction and obtain borophosphosilicate glass.

2. The method for preparing borophosphosilicate glass by SACVD according to claim 1, wherein: The heating temperature is 400°C to 550°C.

3. The method for preparing borophosphosilicate glass by SACVD according to claim 1, wherein: The reaction protection gas includes oxygen and / or nitrogen.

4. The method for preparing borophosphosilicate glass by SACVD according to claim 1, wherein: The reaction pressure is 170 torr to 200 torr.

5. The method for preparing borophosphosilicate glass by SACVD according to claim 1, wherein: The gaseous reaction source includes a gaseous silicon source, a gaseous phosphorus source and a gaseous boron source; and / or, the gaseous silicon source comprises silane and / or tetraethyl orthosilicate; and / or, the gaseous phosphorus source comprises trimethyl phosphine and / or triethyl phosphate; And / or, the gaseous boron source includes trimethylboron and / or triethyl borate.

6. The method for preparing borophosphosilicate glass by SACVD according to claim 5, characterized in that: The flow rate of the gaseous silicon source is 700 mg / min to 900 mg / min; and / or, the flow rate of the gaseous phosphorus source is 70 mg / min to 80 mg / min; And / or, the flow rate of the gaseous boron source is 200 mg / min~300 mg / min.

7. The method for preparing borophosphosilicate glass by SACVD according to claim 1, wherein: The carrier gas of the gaseous reaction source includes argon and / or helium; And / or, the flow rate of the carrier gas of the gaseous reaction source is 2000 sccm to 4000 sccm; And / or, in the gaseous reaction source stabilization step, the time for introducing the gaseous reaction source into the tail gas treatment unit of the SACVD device is 20s to 40s; and / or, the oxygen source comprises oxygen and / or ozone; And / or, the flow rate of the oxygen source is 4000 sccm~6000 sccm.

8. The method for preparing borophosphosilicate glass by SACVD according to claim 1, wherein: During the deposition reaction, the mass percentage concentration of the oxygen source is 10% to 15%; And / or, the deposition reaction time is 50s~100s.

9. The method for preparing borophosphosilicate glass by SACVD according to claim 1, wherein: In the deposition reaction termination step, the gaseous reaction source is introduced into the tail gas treatment unit of the SACVD device, and the source flow meter of the gaseous reaction source is set to 0 sccm; and / or, during the process of introducing the gaseous reaction source into the tail gas treatment unit of the SACVD device, an oxygen source is introduced into the SACVD device; And / or, after the flow rate of the oxygen source into the SACVD device reaches 0 sccm, all gas sources are turned off, and the SACVD device is evacuated to obtain borophosphosilicate glass.

10. An application of the method according to any one of claims 1 to 9, characterized in that: The method is used for mass production of borophosphosilicate glass.

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