Preparation method of amorphous silicon film

Abstract

The preparation method of the amorphous silicon film comprises the following steps: growing a silicon dioxide film on a silicon substrate; forming a nanopore array layer on the surface of the silicon dioxide film; growing an amorphous silicon thin film on the nanopore array layer; and carrying out annealing treatment on the amorphous silicon thin film. The method is low in manufacturing difficulty, simple in process and low in cost, the growth speed and the growth uniformity are improved, the manufacturing process is more stable and controllable, and the obtained amorphous silicon film is more uniform and compact and better in stability.

Description

Technical Field

[0001] The present invention relates to the field of electronic device manufacturing, and in particular to a method for preparing an amorphous silicon thin film. Background Art

[0002] With the advancement of electronic technology, especially the rapid growth of mobile devices such as smartphones, the demand for high-performance, compact, and low-cost next-generation display technologies is increasing. Amorphous silicon thin films are a key material for the manufacture of electronic devices such as TFT-LCDs, OLEDs, and solar cells. Currently, various mature methods for producing amorphous silicon films exist, including physical vapor deposition (PECVD), low-pressure chemical vapor deposition (LPCVD), thermal decomposition, and sputtering. However, these methods all present challenges such as high manufacturing difficulty, complex processes, and high costs, making them difficult to meet the demands of large-scale production.

[0003] Therefore, it is necessary to provide an improved method for preparing an amorphous silicon thin film to overcome the above defects. Summary of the Invention

[0004] The purpose of the present invention is to provide an improved method for preparing amorphous silicon thin films, which has low manufacturing difficulty, simple process, low cost, improves growth rate and growth uniformity, makes the manufacturing process more stable and controllable, and the obtained amorphous silicon thin films are more uniform, dense, and have better stability.

[0005] To achieve the above object, the method for preparing an amorphous silicon thin film of the present invention comprises the following steps:

[0006] growing a silicon dioxide thin film on a silicon substrate;

[0007] forming a nanopore array layer on the surface of the silicon dioxide film;

[0008] growing an amorphous silicon thin film on the nanohole array layer; and

[0009] The amorphous silicon thin film is annealed.

[0010] Compared to existing technologies, the present invention's method for preparing an amorphous silicon thin film increases the surface area of ​​the amorphous silicon film by forming a nanopore array layer on the surface of the cobalt dioxide thin film, thereby improving growth rate and uniformity, making the manufacturing process more stable and controllable. Furthermore, the amorphous silicon thin film has low manufacturing costs and high production efficiency. Through meticulous annealing of the amorphous silicon thin film, a more uniform and dense amorphous silicon thin film can be obtained. The present invention's manufacturing method offers advantages such as simplicity, low cost, high production efficiency, and stable manufacturing, providing a novel and superior solution for electronic device manufacturing.

[0011] As an embodiment, the amorphous silicon thin film is grown in a vacuum chamber by physical vapor deposition.

[0012] As an embodiment, the gas in the vacuum chamber includes organic silicon source gas and hydrogen.

[0013] As an embodiment, the flow rate of the organic silicon source gas is 50-150 sccm, and the flow rate of the hydrogen gas is 1500-3000 sccm.

[0014] As an embodiment, the temperature of the vacuum chamber is 400-500° C., and the pressure is 0.05-0.15 Pa.

[0015] As an embodiment, the annealing treatment includes: controlling the annealing temperature to be 600-800° C. and the annealing time to be 1-2 hours.

[0016] As an embodiment, the thickness of the silicon dioxide film is 50-100 nm.

[0017] As an embodiment, forming the nanopore array layer includes: forming a photoresist layer on the silicon dioxide film using ultraviolet lithography technology; forming a nanopore array structure with a spacing on the photoresist layer; removing the photoresist layer, and forming the nanopore array layer after oxidation and acid treatment. DETAILED DESCRIPTION

[0018] To make the above-mentioned objects, features, and advantages of the present application more clearly understood, the specific embodiments of the present application are described in detail below with reference to some embodiments. In the following description, many specific details are set forth to facilitate a full understanding of the present application. However, the present application can be implemented in many other ways than those described herein, and those skilled in the art can make similar improvements without violating the connotations of the present application. Therefore, the present application is not limited by the specific embodiments disclosed below.

[0019] In the description of this application, the terms "first" and "second" are used for descriptive purposes only and should not be understood to indicate or imply relative importance or implicitly specify the number of the technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include at least one of such features. In the description of this application, "plurality" means at least two, for example, two, three, etc., unless otherwise specifically defined.

[0020] In this application, unless otherwise expressly specified or limited, when a first feature is "above" or "below" a second feature, it may mean that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Furthermore, when a first feature is "above," "above," or "above" a second feature, it may mean that the first feature is directly above or diagonally above the second feature, or simply means that the first feature is at a higher level than the second feature. When a first feature is "below," "below," or "below" a second feature, it may mean that the first feature is directly below or diagonally below the second feature, or simply means that the first feature is at a lower level than the second feature.

[0021] It should be noted that when an element is referred to as being "fixed to" or "disposed on" another element, it may be directly on the other element or there may be an intermediate element. When an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be an intermediate element. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and similar expressions used herein are for illustrative purposes only and do not represent the only implementation methods.

[0022] The following examples further illustrate the method for preparing an amorphous silicon thin film of the present invention, but the present invention is not limited thereto. The method of the present invention is intended to provide a method for preparing an amorphous silicon thin film, which has low manufacturing difficulty, simple process, low cost, improves growth rate and growth uniformity, makes the manufacturing process more stable and controllable, and obtains a more uniform, dense, and stable amorphous silicon thin film.

[0023] In one embodiment of the method for preparing an amorphous silicon thin film of the present invention, the method comprises the following steps:

[0024] growing a silicon dioxide thin film on a silicon substrate;

[0025] forming a nanopore array layer on the surface of the silicon dioxide film;

[0026] growing an amorphous silicon thin film on the nanohole array layer; and

[0027] The amorphous silicon thin film is annealed.

[0028] By forming a nanopore array layer on the surface of a cobalt dioxide thin film, the present invention increases the surface area of ​​the amorphous silicon film, thereby improving growth rate and uniformity, making the manufacturing process more stable and controllable. Furthermore, the manufacturing cost of the amorphous silicon film is low and production efficiency is high. Through a detailed annealing treatment of the amorphous silicon film, a more uniform and dense amorphous silicon film can be obtained. The manufacturing method of the present invention has the advantages of simple process, low cost, high production efficiency, and stable manufacturing, providing a new and excellent solution for electronic device manufacturing.

[0029] Specifically, the thickness of the silicon dioxide film is 50-100 nm, and the thickness of the silicon dioxide film can be adjusted according to actual conditions.

[0030] Specifically, forming the nanopore array layer includes: forming a photoresist layer on the silicon dioxide film using ultraviolet lithography technology; forming a nanopore array structure with a spacing on the photoresist layer; removing the photoresist layer, and forming the nanopore array layer after oxidation and acid treatment.

[0031] In one embodiment, a silicon dioxide film is grown on a silicon substrate with oriented grains. Subsequently, a nanopore array layer is formed on the surface of the silicon dioxide film. The specific method is as follows: a protective film, such as a silicon dioxide film or a polystyrene (PS) film, is coated on the surface of the silicon dioxide film. A photoresist layer is formed on the protective film using ultraviolet lithography. Next, a nanopore array structure with a predetermined spacing is formed on the photoresist layer. Finally, the photoresist layer is removed, and after oxidation and nitric acid treatment, a nanopore array layer with a predetermined pore size and porosity is formed on the surface of the silicon dioxide film.

[0032] Next, an amorphous silicon film with a thickness of 40-60 nm is grown on the nanopore array layer using PECVD in a vacuum chamber. The organic silicon source gas can be dimethylsilane or trimethylsilane, with hydrogen as the carrier gas. Specific parameters include a vacuum chamber temperature of 400-500°C, a pressure of 0.05-0.15 Pa, an organic silicon source gas flow rate of 50-150 sccm, and a hydrogen flow rate of 1500-3000 sccm.

[0033] Next, the amorphous silicon film is annealed. Specifically, the annealing is performed in a nitrogen oxide atmosphere at a temperature of 600-800° C. for 1-2 hours.

[0034] The manufacturing method provided by the present invention can produce high-quality, uniform amorphous silicon thin films with low manufacturing costs and simple processes, meeting the needs of large-scale production. Specifically, the present invention introduces a nanopore array layer, which leverages the surface area of ​​the amorphous silicon film to improve the growth rate and uniformity of the amorphous silicon film, thereby achieving the advantages of stable process, low manufacturing costs, and high production efficiency. This provides a new and excellent solution for electronic device manufacturing and has broad application prospects.

[0035] The above disclosure is only a preferred embodiment of the present invention, which certainly cannot be used to limit the scope of rights of the present invention. Therefore, equivalent changes made according to the scope of the patent application of the present invention are still within the scope covered by the present invention.

Claims

1. A method for preparing an amorphous silicon thin film, characterized in that: The following steps are involved: growing a silicon dioxide thin film on a silicon substrate; forming a nanopore array layer on the surface of the silicon dioxide film; growing an amorphous silicon thin film on the nanohole array layer; and The amorphous silicon thin film is annealed.

2. The method for preparing an amorphous silicon thin film according to claim 1, wherein: The amorphous silicon thin film is grown in a vacuum chamber by physical vapor deposition.

3. The method for preparing an amorphous silicon thin film according to claim 2, wherein: The gas in the vacuum chamber includes organic silicon source gas and hydrogen.

4. The method for preparing an amorphous silicon thin film according to claim 3, wherein: The flow rate of the organic silicon source gas is 50-150 sccm, and the flow rate of the hydrogen gas is 1500-3000 sccm.

5. The method for preparing an amorphous silicon thin film according to claim 2, wherein: The temperature of the vacuum chamber is 400-500° C., and the pressure is 0.05-0.15 Pa.

6. The method for preparing an amorphous silicon thin film according to claim 1, wherein: The annealing treatment includes: controlling the annealing temperature to be 600-800° C. and the annealing time to be 1-2 hours.

7. The method for preparing an amorphous silicon thin film according to claim 1, wherein: The thickness of the silicon dioxide film is 50-100 nm.

8. The method for preparing an amorphous silicon thin film according to claim 1, wherein: The nanopore array layer is formed by forming a photoresist layer on the silicon dioxide film using ultraviolet lithography technology; forming a nanopore array structure with a spacing on the photoresist layer; removing the photoresist layer, and forming the nanopore array layer after oxidation and acid treatment.

9. The method for preparing an amorphous silicon thin film according to claim 2, wherein: The organic silicon source gas is trimethylsilane or dimethylsilane.