Circular polarization packaging antenna based on silicon-based technology

Abstract

The invention discloses a circularly polarized packaged antenna based on a silicon-based process. The circularly polarized packaged antenna comprises a first silicon-based dielectric layer, a second silicon-based dielectric layer, a third silicon-based dielectric layer, a fourth silicon-based dielectric layer and a fifth silicon-based dielectric layer which are stacked, the parasitic radiator is arranged on the surface of one side, deviating from the second silicon-based dielectric layer, of the first silicon-based layer; the main radiator is arranged between the first silicon-based dielectric layer and the second silicon-based dielectric layer; the antenna feed structure comprises a slot coupling floor layer, a probe and a metalized via hole, the microwave chip is arranged on the side, away from the fourth silicon-based dielectric layer, of the fifth silicon-based dielectric layer, and the microwave chip is connected to the probe through a metalized via hole in a gold wire bonding mode. According to the circularly polarized packaged antenna based on the silicon-based technology, compared with a common substrate, the dielectric substrate used in the millimeter wave frequency band has higher relative dielectric constant and physical limitation of packaging material selection.

Description

Technical Field

[0001] The present invention belongs to the technical field of antennas, and in particular relates to a circularly polarized packaged antenna based on a silicon-based process. Background Art

[0002] Compared to the sub-6 frequency bands used in 5G communications, millimeter-wave frequency bands offer greater flexibility, enabling wider bandwidths while achieving smaller physical dimensions. The rapid development of millimeter-wave communication technology has driven demand for miniaturization and high integration of communication devices. While millimeter-wave frequency bands offer numerous advantages, the attenuation of microwave devices increases dramatically as the physical dimensions of the wavelength decrease. Furthermore, complex systems, high-density device layouts, and complex electromagnetic environments place high demands on millimeter-wave device design. Summary of the Invention

[0003] The present invention provides a circularly polarized packaged antenna based on a silicon-based process, which can achieve low insertion loss and high integration.

[0004] The present invention is achieved through the following technical solutions: The present invention provides a circularly polarized packaged antenna based on a silicon-based process, comprising: A first silicon-based dielectric layer, a second silicon-based dielectric layer, a third silicon-based dielectric layer, a fourth silicon-based dielectric layer, and a fifth silicon-based dielectric layer are stacked; The parasitic radiator is provided on a surface of the first silicon-based dielectric layer facing away from the second silicon-based dielectric layer; A main radiator is provided between the first silicon-based dielectric layer and the second silicon-based dielectric layer; Antenna feeding structure, comprising: A gap coupling floor layer is provided between the second silicon-based dielectric layer and the third silicon-based dielectric layer; A probe is provided between the third silicon-based dielectric layer and the fourth silicon-based dielectric layer; a metallized via formed on the fourth silicon-based dielectric layer; The microwave chip is arranged on a side of the fifth silicon-based dielectric layer away from the fourth silicon-based dielectric layer. The microwave chip is connected to the probe through gold wire bonding and metallized vias.

[0005] In some embodiments, the parasitic radiator includes a plurality of fan-shaped slotted arc patches, which together form a circular ring structure, and the plurality of slotted arc patches are all adhered to the first silicon-based dielectric layer; the main radiator includes a plurality of patch antennas, which are arranged at intervals and respectively located between the first silicon-based dielectric layer and the second silicon-based dielectric layer.

[0006] In some embodiments, the circularly polarized packaged antenna further includes a metal shielding cavity, the metal shielding cavity includes several groups of metal holes, each group of metal holes includes aligned metal holes formed on the second silicon-based dielectric layer, the third silicon-based dielectric layer, and the third silicon-based dielectric layer.

[0007] In some embodiments, the circularly polarized packaged antenna includes a shielding structure, which is disposed between the first silicon-based dielectric layer and the second silicon-based dielectric layer, and the shielding structure is disposed in a ring outside the main radiator.

[0008] In some embodiments, a plurality of circular through holes are formed on the slot coupling floor layer.

[0009] In some embodiments, the circularly polarized packaged antenna further includes a packaging structure, the packaging structure including: a packaging solder bead, located on a side of the fifth silicon-based dielectric layer facing away from the fourth silicon-based dielectric layer; The metal shielding shell is located on a side of the microwave chip away from the fifth silicon-based dielectric layer, and the metal shielding shell is spaced apart from the microwave chip.

[0010] In some embodiments, the parasitic radiator is obtained by creating gaps in the concentric ring-shaped microstrip line.

[0011] Compared with the prior art, the present invention has the following advantages and beneficial effects: The circularly polarized packaged antenna based on silicon-based technology provided by the present invention uses a dielectric substrate in the millimeter wave frequency band that has a higher relative dielectric constant and physical limitations on the choice of packaging materials compared to common substrates. r =11.9) as the antenna medium, and the technical requirements for achieving stable circular polarization scanning performance within the working bandwidth on materials with high relative dielectric constant are relatively high. Therefore, the present invention adopts a method of densely arranging small antennas on the same layer and using a multi-layer parasitic structure to achieve widened working bandwidth and angular scanning performance.

[0012] The use of densely arranged stacked antennas will lead to a complex electromagnetic environment inside the antenna. The strong coupling between the radiator and the shield inside the antenna unit forms a cavity resonance structure, resulting in the existence of a standing wave mode in the antenna, destroying the antenna's smooth in-band gain and circular polarization performance. The present invention loads a de-resonance structure to achieve smooth in-band gain of the antenna. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings in the embodiments will be briefly introduced below. It should be understood that the following drawings only illustrate certain embodiments of the present invention and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can be obtained based on these drawings without paying any creative work.

[0014] Figure 1 A schematic cross-sectional structure diagram of a silicon-based circularly polarized packaged antenna provided in an embodiment of the present invention; Figure 2 A side view of a silicon-based circularly polarized packaged antenna provided by an embodiment of the present invention; Figure 3 A schematic diagram of the simulation results of the electric field distribution of the antenna at the radiation zero point when no de-resonance structure is loaded according to an embodiment of the present invention; Figure 4 A schematic diagram of the return loss simulation results of the antenna within the working bandwidth when no de-resonance structure is loaded, provided by an embodiment of the present invention; Figure 5 A schematic diagram of simulation results of the variation of in-band gain with frequency before and after using a de-resonance structure provided by an embodiment of the present invention; Figure 6 A top view of a silicon-based packaged antenna array provided in an embodiment of the present invention; Figure 7 A schematic diagram of the active return loss simulation results of the silicon-based packaged antenna units provided in an embodiment of the present invention when the unit pattern is scanned after central excitation; Figure 8 Schematic diagram of the arrangement of silicon-based packaged antenna units provided in an embodiment of the present invention, and simulation results of the coupling coefficients between the units in the array and other units after central excitation; Figure 9 A schematic diagram of the simulation results of the arrangement of silicon-based packaged antenna units provided in an embodiment of the present invention, showing the change of the axial ratio with the pattern scanning after central excitation; Figure 10 A schematic diagram of the simulation results of achievable gain scanning after central excitation is shown for the arrangement of silicon-based packaged antenna units provided in an embodiment of the present invention.

[0015] in: 1. Parasitic radiator; 2. Main radiator; 3. Shielding structure; 4. Slot-coupled floor layer; 5. Antenna reference ground plane; 6. Metallized via; 7. Probe; 8. First silicon-based dielectric layer; 9. Second silicon-based dielectric layer; 10. Third silicon-based dielectric layer; 11. Fourth silicon-based dielectric layer; 12. Fifth silicon-based dielectric layer; 13. Package solder bead; 14. Metal shielding shell; 15. Gold wire bonding; 16. Microwave chip; 17. Package antenna; 18. Package antenna system; 19. Metal hole; 20. Rectangular microstrip metal branch. DETAILED DESCRIPTION

[0016] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments.

[0017] In the description of the present invention, it should be noted that the terms "center", "up", "down", "left", "right", "vertical", "horizontal", "inside", "outside", etc. used to indicate the orientation or position relationship are based on the orientation or position relationship shown in the accompanying drawings, or are the orientation or position relationship in which the product of the invention is usually placed when in use. They are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, they should not be understood as limiting the present invention.

[0018] Furthermore, the use of terms such as "horizontal" and "vertical" in the description of the present invention does not necessarily imply that the component must be absolutely horizontal or suspended, but rather that it can be slightly tilted. For example, "horizontal" simply means that its direction is more horizontal than "vertical" and does not mean that the structure must be completely horizontal, but rather that it can be slightly tilted.

[0019] It should also be noted that, in the description of the present invention, unless otherwise expressly specified or limited, the terms "disposed," "installed," "connected," and "connected" should be understood in a broad sense. For example, they may refer to fixed connections, detachable connections, or integral connections; mechanical connections or electrical connections; direct connections or indirect connections through an intermediate medium; and internal connections between two components. Those skilled in the art will understand the specific meanings of the above terms in the present invention in specific contexts.

[0020] The terms "comprise," "comprising," and "having," and any variations thereof, are intended to cover non-exclusive inclusions. For example, a process, method, system, product, or apparatus comprising a series of steps or modules is not limited to the listed steps or modules, but may optionally include steps or modules not listed, or may optionally include other steps or modules inherent to the process, method, product, or apparatus.

[0021] The present invention provides a circularly polarized packaged antenna based on a silicon-based process, comprising: A first silicon-based dielectric layer 8, a second silicon-based dielectric layer 9, a third silicon-based dielectric layer 10, a fourth silicon-based dielectric layer 11 and a fifth silicon-based dielectric layer 12 arranged in a stacked manner; The parasitic radiator 1 is provided on the surface of the first silicon-based layer 8 facing away from the second silicon-based dielectric layer 9; The main radiator 2 is provided between the first silicon-based dielectric layer 8 and the second silicon-based dielectric layer 9; Antenna feeding structure, comprising: The gap coupling floor layer 4 is provided between the second silicon-based dielectric layer 9 and the third silicon-based dielectric layer 10; The probe 7 is provided between the third silicon-based dielectric layer 10 and the fourth silicon-based dielectric layer 11; A metallized via 6 formed on the fourth silicon-based dielectric layer 11; The microwave chip 16 is disposed on a side of the fifth silicon-based dielectric layer 12 facing away from the fourth silicon-based dielectric layer 11 . The microwave chip 16 is connected to the probe 7 through the gold wire bonding 15 and the metallized via 6 .

[0022] In the above-described embodiment, the slot-coupled floor layer 4 can serve as a ground plane to decouple the array antenna elements, achieving electromagnetic isolation between adjacent elements, thereby improving the operational stability of the antenna elements and avoiding performance degradation and pattern distortion after the elements are arrayed. In some examples, the slot-coupled floor layer 4 can be provided with rectangular protrusions of rectangular microstrip metal branches 20, which serve as a phase and matching structure for adjusting the phase between the main radiators 2 of the square microstrip patch, thereby achieving matching and phase adjustment functions between the four dispersed main radiators 2. The rectangular microstrip metal branches 20 can wrap around the shielding layer in a clockwise direction to form protrusions at the edges and corners. The rectangular microstrip metal branches 20 are of uniform size and are composed of a total of six rectangular microstrips.

[0023] In some examples, the probe 7 can be applied between the third silicon-based dielectric layer 10 and the fourth silicon-based dielectric layer 11. The probe 7 can use an L-shaped curved microstrip line, and the curved structure simultaneously generates excitation sources in the X-axis direction and the Y-axis direction. At the same time, the slot coupling floor layer 4 isolates the feeding structure layer from the radiator layer to avoid the influence of the complex electromagnetic environment on the radiator. At the same time, the slot coupling floor layer 4 has a cross-shaped slot and is surrounded by four circular slots. The cross-shaped slots are placed orthogonally, and with the L-shaped curved microstrip line, they couple the electric fields in two orthogonal directions. At the same time, the radiating structure above the slot coupling floor layer 4 realizes circular polarization performance. On the basis of widening the antenna bandwidth, two orthogonal electromagnetic excitation sources are generated simultaneously, and there is a 90° phase difference between the two modes.

[0024] In some examples, the probe 7 may be a bent structure, and may be composed of five strip lines connected end to end, forming a semi-annular structure, and electrically connected to the gap on the gap coupling floor layer 4 through electromagnetic coupling.

[0025] The metallized via 6 can serve as a current-guiding structure from the pin of the microwave chip 16 to the probe 7. The metallized via 6 can realize the SIW shielding cavity structure, improve the isolation between units in the array, and avoid the load matching imbalance and radiation performance deterioration caused by coupling between adjacent units during antenna array pattern scanning.

[0026] The microwave chip 16 is connected to the probe 7 through the metallized via 6 by the gold wire bonding 15, which can realize the radio frequency excitation of the package antenna 17. The gold wire bonding 15 can realize the current guiding effect and realize the electrical connection between the microwave chip 16 and the package antenna 17. In some embodiments, the parasitic radiator 1 includes a plurality of fan-shaped slotted arc patches, which together form a circular ring structure, and the plurality of slotted arc patches are all adhered to the first silicon-based dielectric layer 8; the main radiator 2 includes a plurality of patch antennas, which are arranged at intervals and are respectively located between the first silicon-based dielectric layer 8 and the second silicon-based dielectric layer 9.

[0027] In some examples, the parasitic radiator 1 may be composed of four fan-shaped slotted arc-shaped patches, and the patch sizes may be the same. Of course, other numbers of slotted arc-shaped patches may also be used.

[0028] In some examples, the main radiator 2 may be composed of four identical square patch antennas, and the four rectangular structures act simultaneously to radiate TM 10 ,TM 01 mode, the electric fields of the two modes are orthogonally distributed, which is achieved through the feeding structure Feed phase difference. Specifically, the square patch antenna can use 2 2 square radiation patches. The main radiator 2 can be coupled to the ground layer 4 through the slot to achieve coupling feeding.

[0029] In some embodiments, the circularly polarized packaged antenna further includes a metal shielding cavity, which includes several groups of metal holes 19 , each group of metal holes 19 including aligned metal holes 19 formed on the second silicon-based dielectric layer 9 , the second silicon-based dielectric layer 9 and the third silicon-based dielectric layer 10 .

[0030] In the above embodiment, the metal shielding cavity can achieve shielding and decoupling performance between antenna units through the SIW cavity.

[0031] In some embodiments, the circularly polarized packaged antenna includes a shielding structure 3 , which is disposed between the first silicon-based dielectric layer 8 and the second silicon-based dielectric layer 9 , and is disposed around the outside of the main radiator 2 .

[0032] In the above embodiment, the shielding structure 3 can be applied between the first silicon-based dielectric layer 8 and the second silicon-based dielectric layer 9. The shielding structure 3 can realize the shielding function between the main radiators 2 of adjacent array units and achieve the decoupling function between units.

[0033] In some examples, the shielding structure 3 may be in the form of a rectangular frame.

[0034] In some embodiments, a plurality of circular through holes are formed on the slot coupling floor layer 4 .

[0035] In the above embodiment, the circular through-hole disrupts the surface electric field distribution on the resonant upper surface of the cavity, resulting in a smooth in-band gain for the circularly polarized packaged antenna. According to the analysis of the simulated electric field distribution, the antenna's pure standing wave is caused by the SIW metal cavity structure formed by the second silicon-based dielectric layer 9, the third silicon-based dielectric layer 10, and the metal hole 19. In the above embodiment, the circular through-hole enables the antenna to achieve a smooth gain within the operating bandwidth, smoothing the circular polarization operating bandwidth. This avoids the occurrence of operating points where the antenna's matching deteriorates and the pattern is distorted.

[0036] In some examples, at least one of rectangular slots (through holes) and circular slots (through holes) may be formed on the slot coupling floor layer 4. For example, a group of orthogonal slots and four circular slots may be formed on the slot coupling floor layer 4. The orthogonal slots are opened in the horizontal direction and the vertical direction respectively. The two slots are the same size and are only placed orthogonally in spatial position.

[0037] In some embodiments, the circularly polarized packaged antenna further includes a packaging structure, the packaging structure including: The packaging solder bead 13 is located on a side of the fifth silicon-based dielectric layer 12 facing away from the fourth silicon-based dielectric layer 11; The metal shielding shell 14 is located on a side of the microwave chip 16 away from the fifth silicon-based dielectric layer 12 , and the metal shielding shell 14 is spaced apart from the microwave chip 16 .

[0038] In some embodiments, the parasitic radiator 1 can be obtained by creating gaps in concentric circular microstrip lines.

[0039] In the above embodiment, the parasitic radiator 1 is provided with a slot of equal width in the horizontal direction and the vertical direction, and a slot of equal width; the two slots divide the parasitic radiator 1 into several independent radiating parts, which form the parasitic structure of the antenna unit through electromagnetic coupling. Figure 1 As an example, the parasitic radiator 1 may be divided into 8 independent radiating parts.

[0040] In the circularly polarized packaged antenna based on silicon-based technology provided in this application, please refer to Figures 1 to 3 , Figure 1 A schematic cross-sectional structure diagram of a silicon-based circularly polarized packaged antenna provided in an embodiment of the present invention; Figure 2 A side view of a silicon-based circularly polarized packaged antenna provided by an embodiment of the present invention; Figure 3This is the simulation result of the electric field distribution at the radiation zero point of the antenna provided by the embodiment of the present invention when the deresonance structure is not loaded. The circularly polarized packaged antenna based on silicon-based technology specifically includes five silicon-based dielectric layers. The stacked structure, from top to bottom, is the first silicon-based dielectric layer 8, the second silicon-based dielectric layer 9, the third silicon-based dielectric layer 10, the fourth silicon-based dielectric layer 11, and the fifth silicon-based dielectric layer 12. A metal conductor is applied to each dielectric layer. The parasitic radiator 1 is applied to the upper surface of the first silicon-based dielectric layer 8, and the main radiator 2 is applied to the lower surface of the first silicon-based dielectric layer 8 and the upper surface of the second silicon-based dielectric layer 9. A shielding layer is applied between the first silicon-based dielectric layer 8 and the second silicon-based dielectric layer 9. A slotted coupling floor is applied between the second silicon-based dielectric layer 9 and the third silicon-based dielectric layer 10. A stripline current steering structure is applied between the third silicon-based dielectric layer 10 and the fourth silicon-based dielectric layer 11. The antenna floor is applied between the fourth silicon-based dielectric layer 11 and the fifth silicon-based dielectric layer 12. Metallized vias 6 penetrate the second silicon-based dielectric layer 9, the third silicon-based dielectric layer 10, and the fourth silicon-based dielectric layer 11, forming a metal shielding cavity. The lower surface of the fifth silicon-based dielectric layer 12 serves as a carrier for microwave chip 16, which is connected to the metal shielding structure 3 at the bottom. Spherical package solder beads 13 are applied to the lower surface of the fifth silicon-based dielectric layer 12 to facilitate integration with the next-level system.

[0041] The pad on the microwave chip 16 on the lower surface of the fifth silicon-based dielectric layer 12 of the circularly polarized packaged antenna directs the RF signal to the vertical structural via on the antenna reference ground plane 5 through the gold wire bonding 15. The signal passes through the fifth silicon-based dielectric layer 12 and the metallized via 6 of the fourth silicon-based dielectric layer 11 and is connected to the stripline L-shaped probe 7. This structure directs the electromagnetic energy of the microwave chip 16 to the antenna feed structure layer. The bent stripline probe 7 directs the electric field to a 90° bend, generating source excitation in two directions. The electric field is concentrated at the gap of the gap coupling floor layer 4. The two orthogonal sources respectively excite the orthogonally distributed cross-shaped gaps, and the energy is coupled to the antenna radiation structure through here.

[0042] The packaged antenna 17 system is specifically composed of the following parts: antenna radiator structure, antenna feeding structure, array unit shielding structure 3, and microwave chip 16 integrated structure.

[0043] Reference Figure 1, the packaging medium has a high relative dielectric constant (11.9), and the narrowband resonant structure of the typical microstrip antenna is difficult to meet the working bandwidth of the millimeter wave packaged antenna 17. Therefore, the radiation structure of the millimeter wave circularly polarized packaged antenna is composed of a parasitic radiator 1 and a main radiator 2; the parasitic radiator 1 is divided into eight parts, and the parasitic radiator 1 is composed of a circular microstrip line with 4 slits. The slits are etched in the directions of 0°, 45°, 90°, and 135° respectively. The angle of the ring relative to the reference center is 55°. The parasitic radiator 1 is excited in the orthogonal direction to produce two working modes to widen the circular polarization bandwidth performance of the antenna. The main radiator 2 is divided into four square microstrip sub-arrays with a side length of 0.4mm and a spacing of 0.3mm. The structure is excited by the electromagnetic energy gathered on the slot coupling floor layer 4 below. The overall radiation structure works in TM 10 ,TM 01 mode, with the electric and magnetic fields of the two modes orthogonal and a 90° source phase difference. The introduction of parasitic radiator 1 improves the circular polarization performance of the antenna, achieving stable circular polarization gain and a low axial ratio within the antenna's operating bandwidth. Using HFSS electromagnetic simulation software, the resonant frequencies of parasitic radiator 1 and main radiator 2 are adjusted to the operating bandwidth, broadening the antenna's operating bandwidth. The dimensions of the antenna radiator can be calculated using equations 1, 2, and 3, and optimized using simulation software. (Formula 1) (Formula 2) (Formula 3) in, is the equivalent dielectric constant, is the relative dielectric constant, h is the thickness of the antenna substrate, is the extension length, a is the width of the microstrip antenna, is the estimated antenna resonant frequency, b is the length of the microstrip antenna, and c is the speed of light. These parameters are all key parameters in the design process.

[0044] In order to achieve the single-feed circular polarization performance of the antenna, the antenna feeding structure needs to meet the energy excitation in two directions and produce a stable phase difference, such as Figure 1As shown, the probe 7 is connected to the microwave chip 16 via a metallized through-hole. The stripline structure is located between the third silicon-based dielectric layer 10 and the fourth silicon-based dielectric layer 11. The bending structure generates excitation sources in the x and y directions and there is a stable 90° phase difference between the two sources. The L-shaped probe 7 structure excites the upper slot coupling floor layer 4. The slot coupling floor layer 4 is provided with orthogonal slots to couple electromagnetic energy to the upper radiation structure (i.e., the parasitic radiator 1 and the main radiator 2). The slot coupling floor layer 4 is surrounded by circular slots. The slot adjustment microwave resonant cavity is composed of a shielding structure 3, a second silicon-based dielectric layer 9, and a slot coupling floor layer 4. The resonant frequency of the resonant cavity is adjusted to achieve stable gain and circular polarization performance within the working bandwidth of the antenna. As shown Figure 3 The figure shows the simulation results of the electric field distribution of the antenna at the radiation zero point when the de-resonance structure is not loaded. It can be seen that the electric field is confined within the resonant cavity. In this case, there is no electromagnetic radiation performance, such as Figure 5 The gain results show that the de-resonant structure achieves a stable in-band gain performance of the antenna.

[0045] The shielding structure 3 is located within the first and second silicon-based dielectric layers 8, 9. This structure is connected to the antenna reference ground plane 5 via metalized vias 6, forming a modular primary radiator 2. This prevents polarization mismatch and pattern distortion caused by mutual interference among the primary radiators 2 after the elements are arrayed. Furthermore, the metal holes 19 shield the cavity, isolating the coupling effects between the microstrip feed lines between adjacent elements of the antenna array. This minimizes the impact of adjacent antennas on the elements in the array, ensuring independent and stable operation of each element and achieving the circularly polarized scanning performance of the array antenna.

[0046] Reference Figure 2 The packaged antenna 17 system is a co-designed system for the microwave chip 16 package and antenna. Spherical package solder beads 13 connect this system to the next-level system. A metal shielding shell 14 protects the physical structure of the microwave chip 16 and provides electromagnetic shielding. Microwave chip 16 is connected to the RF input port of the packaged antenna 17 via gold wire bonds 15, meeting the design requirements of high integration and low profile for the packaged antenna 17, achieving a coordinated design of the circularly polarized antenna and microwave chip 16 package.

[0047] Reference Figure 3 , Figure 3 This is the surface electric field distribution result of the antenna resonant mode when no deresonance structure is loaded. It can be seen that the electric field is concentrated in the cavity. In this mode, the antenna has no energy radiation, and a non-radiative zero point appears within the operating bandwidth.

[0048] Reference Figure 4 , Figure 4 The simulation results of the antenna return loss versus frequency without a deresonant structure are shown. A significant degradation occurs at 60.6 GHz, resulting in an inoperable frequency within the band.

[0049] Reference Figure 5 , Figure 5 Figure 3 shows the gain change within the operating frequency band before and after the deresonance structure is added. After adding the deresonance structure, the antenna's gain at 60.6 GHz increases from -0.3 dB to 5.3 dB, demonstrating that this result resolves the radiation null phenomenon caused by the multi-layer stacked structure.

[0050] Reference Figure 6 , Figure 6 An embodiment of the present invention provides a millimeter-wave packaged antenna 17 array, which integrates 36 antenna units for arrangement. The outermost circle is a dummy element that is not excited and only serves as the boundary of the antenna unit to excite the central antenna array. Each unit is connected to achieve an achievable gain of 17.5dB in the normal direction of the array and a 40° array circular polarization scanning characteristic.

[0051] Reference Figure 7 , Figure 7 The simulation results of the active standing wave coefficient of the array unit when the beam is scanned to 0°, 20°, and 40° within the working bandwidth are shown. It can be seen that the active standing wave coefficient is less than -7.5dB when the working bandwidth is 57.5GHz - 61.5GHz and the scanning angle is within 40°, which meets the actual application requirements of the millimeter wave packaged antenna 17.

[0052] Reference Figure 8 , Figure 8 The figure shows the simulation results of the coupling coefficient between the units in the array and other units. This result shows that low coupling between array units can be achieved within the working bandwidth, ensuring that there is no matching imbalance after the antenna units are arrayed.

[0053] Reference Figure 9 , Figure 9 The simulation results of the change of the array axis ratio when the millimeter wave packaged antenna 17 beam scans 0°, 20°, and 40° are shown. It can be seen that the performance of the array circular polarization scanning is met under the specified indicators.

[0054] refer to Figure 10 , Figure 10 The antenna array can achieve gain scanning, and the maximum gains of the antenna at 0°, 20°, and 40° are 17.5dB, 16.9dB, and 15.6dB, respectively. This result meets the gain requirements during antenna scanning. In summary, the embodiment of the present invention proposes a circularly polarized packaged antenna based on silicon-based technology, which is suitable for the field of millimeter wave communications. The packaged antenna adopts a 5-layer dielectric silicon substrate structure, uses a parasitic + main radiation structure, and is loaded with a deresonant circular slot structure. It achieves stable polarization performance and a smooth gain curve within the working bandwidth through an L-shaped probe and slot coupling feeding.

[0055] The above description is only a preferred embodiment of the present invention and does not constitute any limitation to the present invention. Any simple modification or equivalent change made to the above embodiment based on the technical essence of the present invention shall fall within the scope of protection of the present invention.

Claims

1. A circularly polarized packaged antenna based on silicon-based technology, characterized in that: include: A first silicon-based dielectric layer (8), a second silicon-based dielectric layer (9), a third silicon-based dielectric layer (10), a fourth silicon-based dielectric layer (11), and a fifth silicon-based dielectric layer (12) arranged in a stacked manner; A parasitic radiator (1) is provided on a surface of the first silicon-based dielectric layer (8) facing away from the second silicon-based dielectric layer (9); A main radiator (2) is provided between the first silicon-based dielectric layer (8) and the second silicon-based dielectric layer (9); Antenna feeding structure, comprising: A gap coupling floor layer (4) is provided between the second silicon-based dielectric layer (9) and the third silicon-based dielectric layer (10); A probe (7) is provided between the third silicon-based dielectric layer (10) and the fourth silicon-based dielectric layer (11); A metallized via (6) formed on the fourth silicon-based dielectric layer (11); A microwave chip (16) is provided on a side of the fifth silicon-based dielectric layer (12) facing away from the fourth silicon-based dielectric layer (11), and the microwave chip (16) is connected to the probe (7) via the metallized via (6) through a gold wire bonding (15).

2. The circularly polarized packaged antenna based on silicon-based technology according to claim 1, characterized in that: The parasitic radiator (1) includes a plurality of fan-shaped slotted arc patches, the plurality of slotted arc patches together forming a circular ring structure, and the plurality of slotted arc patches are all attached to the first silicon-based dielectric layer (8); the main radiator (2) includes a plurality of patch antennas, the plurality of patch antennas are arranged at intervals and are respectively located between the first silicon-based dielectric layer (8) and the second silicon-based dielectric layer (9).

3. The circularly polarized packaged antenna based on silicon-based technology according to claim 1, characterized in that: The circularly polarized packaged antenna further comprises a metal shielding cavity, the metal shielding cavity comprising a plurality of groups of metal holes (19), each group of the metal holes (19) comprising aligned metal holes (19) formed on the second silicon-based dielectric layer (9), the second silicon-based dielectric layer (9) and the third silicon-based dielectric layer (10).

4. The circularly polarized packaged antenna based on silicon-based technology according to claim 1, characterized in that: The circularly polarized packaged antenna comprises a shielding structure (3), wherein the shielding structure (3) is arranged between the first silicon-based dielectric layer (8) and the second silicon-based dielectric layer (9), and the shielding structure (3) is arranged in a ring outside the main radiator (2).

5. The circularly polarized packaged antenna based on silicon-based technology according to claim 1, characterized in that: A plurality of circular through holes are formed on the slot coupling floor layer (4).

6. The circularly polarized packaged antenna based on silicon-based technology according to claim 1, characterized in that: The circularly polarized packaged antenna further includes a packaging structure, and the packaging structure includes: A packaging solder bead is located on a side of the fifth silicon-based dielectric layer (12) facing away from the fourth silicon-based dielectric layer (11); A metal shielding shell (14) is located on a side of the microwave chip (16) away from the fifth silicon-based dielectric layer (12), and the metal shielding shell (14) is spaced apart from the microwave chip (16).

7. The circularly polarized packaged antenna based on silicon-based technology according to claim 1, characterized in that: The parasitic radiator (1) is obtained by creating gaps in concentric circular microstrip lines.

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