Metallized film evaporation system based on plasma heating and method thereof

Abstract

The invention discloses a metallized film evaporation system based on plasma heating and a method thereof. The metallized film evaporation system comprises a vacuum chamber; the plasma generating module is arranged in the vacuum chamber, the plasma generating module is provided with an ion generator, the plasma generating module can ionize working gas to generate plasma in the modes of radio frequency, direct current discharge or microwaves and the like, and the power, density and distribution state of the plasma can be adjusted; and the metal raw material supply module is connected with the vacuum chamber and provides metal raw materials to be evaporated into the vacuum chamber. The metal raw materials are heated through plasmas generated by the plasma generation module, and compared with traditional heating modes such as resistance heating and electron beam heating, plasma energy is more concentrated and controllable. And the magnetic field adjusting assembly is matched to restrain and guide the motion trail of the plasmas, so that the plasmas can act on the metal raw materials more accurately, the heating efficiency is greatly improved, the evaporation rate of the metal raw materials is increased, the evaporation period is shortened, and the production efficiency is improved.

Description

Technical Field

[0001] The present invention belongs to the technical field of metallized film production, and in particular relates to a metallized film evaporation system and method based on plasma heating. Background Art

[0002] Metallized film is a layer of metallized layer evaporated on the surface of an insulating dielectric film (such as polyester film, polypropylene film) instead of metal foil as an electrode. Since the thickness of the metallized film layer is much lower than that of the metal foil, its volume is significantly reduced after winding compared to the metal foil capacitor.

[0003] However, traditional evaporation technology suffers from high energy loss and dispersed heating areas. Resistance heating relies on indirect heat transfer from heating elements, evaporation boats, and furnaces, which easily diffuses heat into the surrounding environment. This results in uneven heating of the metal raw material and unstable evaporation rates. To address this issue, we propose a metallized thin film evaporation system based on plasma heating. Summary of the Invention

[0004] The present invention aims to solve the problems in the prior art and proposes the following technical solutions:

[0005] Plasma heating-based metallized thin film evaporation system, including:

[0006] vacuum chamber;

[0007] The plasma generating module is arranged in the vacuum chamber and is equipped with an ion generator, which can ionize the working gas to generate plasma through radio frequency, DC discharge or microwave, and can adjust the power, density and distribution of the plasma;

[0008] The metal raw material supply module is connected to the vacuum chamber and provides the metal raw material to be evaporated into the vacuum chamber. The metal raw material supply module is equipped with a conveying device that can accurately convey the metal raw material to the plasma heating area according to the evaporation requirements;

[0009] The base film carrying and transport module is located in the vacuum chamber and is used to carry the base film to be evaporated and can realize the movement and positioning of the base film in the vacuum chamber. The base film carrying and transport module is provided with a base film carrying platform, which can adsorb and fix the base film. At the same time, it is provided with a driving mechanism, which can make the base film move according to the set path and speed during the evaporation process to ensure the uniformity of evaporation;

[0010] The control system is electrically connected to the vacuum chamber module, the plasma generation module, the metal raw material supply module and the base film support and transmission module to control and monitor their operation.

[0011] As a preferred embodiment of the above technical solution, the plasma generating module includes a magnetic field regulating component for generating a specific magnetic field distribution and constraining and guiding the motion trajectory of the plasma, so that the plasma acts more concentratedly on the metal raw material, thereby improving the heating efficiency and evaporation rate.

[0012] As a preferred embodiment of the above technical solution, the conveying device in the metal raw material supply module is a quantitative conveying device, and the amount of metal raw material conveyed each time is accurately controlled according to the instructions of the control system.

[0013] As a preferred embodiment of the above technical solution, the driving mechanism in the base film carrying and transmission module can control the precise movement of the base film in the X, Y, and Z directions, and the movement accuracy can reach the micron level to meet the requirements of different evaporation processes for the base film position accuracy.

[0014] As a preferred embodiment of the above technical solution, the vacuum chamber module includes a gas introduction system, which introduces reactive gas into the vacuum chamber. The reactive gas reacts chemically with the plasma and evaporated metal atoms, thereby forming a metallized film with specific composition and properties on the surface of the base film.

[0015] As a preferred embodiment of the above technical solution, the gas introduction system can accurately control the flow rate, pressure and type of the introduced gas, and adjust the parameters in real time according to the requirements of the evaporation process through the control system.

[0016] As a preferred embodiment of the above technical solution, the control system includes a data recording and analysis unit for recording various working parameters and monitoring data during the evaporation process, analyzing and processing these data, generating an evaporation process report, and optimizing and improving the evaporation process.

[0017] As a preferred embodiment of the above technical solution, a temperature monitoring device is provided inside the vacuum chamber module for real-time monitoring of the temperature distribution inside the vacuum chamber. The control system adjusts the power of the plasma generating module or the power of other heating components according to the temperature monitoring data to ensure that the evaporation process is carried out in a suitable temperature environment.

[0018] As a preferred embodiment of the above technical solution, the system includes an exhaust gas treatment module connected to the vacuum chamber, which is used to collect, treat and discharge the exhaust gas generated during the evaporation process;

[0019] The exhaust gas treatment module includes an exhaust gas collection device, a purification device and an emission device. The purification device adsorbs, decomposes or converts harmful substances in the exhaust gas.

[0020] The evaporation method of the metallized thin film evaporation system based on plasma heating includes the following steps:

[0021] S1. Preparation phase: The control system starts the vacuum pumping device of the vacuum chamber and adjusts the vacuum degree in the vacuum chamber to the set value. At the same time, the base film carrying and transporting module transports the base film to be evaporated to the carrier and fixes it by adsorption. The control system calibrates the position of the base film to ensure that it is in the preset evaporation area.

[0022] S2. Plasma Generation and Regulation: The control system starts the plasma generation module and ionizes the working gas to generate plasma through radio frequency, DC discharge, or microwaves. The power, density, and distribution of the plasma are adjusted according to the evaporation requirements. The magnetic field regulation component simultaneously adjusts the magnetic field distribution to constrain and guide the plasma motion trajectory, so that it acts on the subsequent metal raw material heating area.

[0023] S3. Metal raw material supply and evaporation: The metal raw material supply module accurately delivers a set amount of metal raw material to the plasma heating area through a quantitative conveying device according to the control system instructions. The plasma heats the metal raw material, causing it to evaporate and form metal vapor;

[0024] S4. Base film evaporation: The driving mechanism of the base film carrying and transporting module drives the base film to move along a set path and speed, so that the surface of the base film evenly receives the metal vapor. At the same time, the vacuum chamber is equipped with a gas introduction system. The control system controls the introduction of reaction gas of set type, flow rate and pressure into the chamber. The reaction gas reacts chemically with the plasma and metal vapor to form a metallized film with specific composition and properties on the surface of the base film.

[0025] S5. Process monitoring and adjustment: The control system monitors various parameters of the evaporation process in real time and processes them through the data recording and analysis unit. If any parameters deviate from the set values, the corresponding parameters are adjusted in time to ensure the stability of the evaporation process;

[0026] S6, Ending Stage: When the evaporation reaches the set thickness or time, the control system sequentially stops the metal raw material supply, plasma generation, and reaction gas introduction. The base film carrying and transporting module transfers the evaporated metallized film to the chamber exit area. The vacuum chamber is gradually broken to normal pressure to facilitate the removal of the metallized film.

[0027] S7. Waste gas treatment: During and after the evaporation process, the collection device of the waste gas treatment module collects the waste gas generated in the vacuum chamber. After the purification device adsorbs, decomposes or converts harmful substances, it is discharged in compliance with regulations through the emission device.

[0028] The beneficial effects of the present invention are:

[0029] 1. This invention heats the metal raw material through the plasma generated by the plasma generation module. Compared with traditional heating methods such as resistance heating and electron beam heating, the plasma energy is more concentrated and controllable. Combined with the magnetic field regulation component to constrain and guide the plasma motion trajectory, the plasma can act more precisely on the metal raw material, significantly improving heating efficiency, thereby accelerating the evaporation rate of the metal raw material, shortening the evaporation cycle, and improving production efficiency.

[0030] 2. The metal raw material supply module of the present invention adopts a quantitative conveying device, which can accurately control the raw material supply according to process requirements, avoiding the problem of uneven film thickness caused by too much or too little raw material. The driving mechanism of the base film support and transmission module can achieve micron-level precise movement of the base film in the X, Y, and Z directions. Combined with the movement control of the set path and speed, it ensures that the base film surface evenly receives metal vapor, thereby improving the uniformity of the film;

[0031] 3. The control system of the present invention achieves full control of the evaporation process through real-time monitoring and parameter adjustment of each module. The linked adjustment of the temperature monitoring device and plasma power ensures the stability of the temperature environment in the chamber. The data recording and analysis unit records and analyzes the process parameters, which not only generates detailed evaporation reports but also provides data support for process optimization, helping to continuously improve the process, reduce product defects caused by parameter fluctuations, and improve production stability and yield rate.

[0032] 4. The waste gas treatment module of the present invention can collect waste gas containing harmful substances such as metal vapor and reaction by-products generated during the evaporation process, and remove the harmful substances through adsorption, decomposition or conversion treatment by a purification device before discharging them in compliance with regulations, thereby reducing pollution to the environment. At the same time, it controls the alarm and protection measures of the system under abnormal conditions, thereby improving the safety of equipment operation. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] Figure 1 Shown is a schematic structural diagram of a metallized thin film evaporation system based on plasma heating in an embodiment.

[0034] Description of reference numerals:

[0035] 10. Plasma generation module; 11. Ion generator; 20. Metal raw material supply module; 21. Conveying device; 30. Base film supporting and transmission module; 40. Control system. DETAILED DESCRIPTION

[0036] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions of the present invention will be clearly and completely described below in conjunction with the embodiments.

[0037] Example

[0038] like Figure 1 As shown, the metallized thin film evaporation system based on plasma heating includes a vacuum chamber, a plasma generating module 10 , a metal raw material supply module 20 , a base film supporting and transporting module 30 and a control system 40 .

[0039] The plasma generating module 10 is disposed in a vacuum chamber. The plasma generating module 10 is provided with an ion generator 11, which can ionize the working gas to generate plasma by radio frequency, DC discharge or microwave, and can adjust the power, density and distribution state of the plasma.

[0040] Specifically, the key to achieving "plasma heating" is to provide an energy source for the evaporation of metal raw materials, which is the energy core of the entire evaporation process.

[0041] The metal raw material supply module 20 is connected to the vacuum chamber to provide the metal raw material to be evaporated into the vacuum chamber. The metal raw material supply module 20 is provided with a conveying device 21, which can accurately convey the metal raw material to the plasma heating area according to the evaporation requirements, provide metal raw materials for the evaporation process, and ensure that the raw material can reach the designated heating area through precise conveying, thereby ensuring the continuity of evaporation and the accuracy of raw material utilization.

[0042] The base film carrying and transport module 30 is located in the vacuum chamber and is used to carry the base film to be evaporated, and can realize the movement and positioning of the base film in the vacuum chamber. The base film carrying and transport module 30 is provided with a base film carrying platform, which can adsorb and fix the base film. At the same time, it is provided with a driving mechanism, which can make the base film move according to the set path and speed during the evaporation process to ensure the uniformity of the evaporation.

[0043] It should be noted that this module is the "carrier and mobile control center" of the base film. By fixing the base film and controlling its movement, it ensures that the surface of the base film can evenly receive metal vapor, which is a key link in ensuring the quality (uniformity) of evaporation.

[0044] The control system 40 is electrically connected to the vacuum chamber module, the plasma generating module 10, the metal raw material supply module 20 and the base film supporting and transporting module 30 to control and monitor their operation. The control system 40 can set and adjust the working parameters of each module, such as the vacuum degree, plasma parameters, raw material supply amount, base film moving speed, etc., and monitor the operating status of the system in real time. When an abnormal situation occurs, it can promptly alarm and take corresponding protective measures.

[0045] It should be noted that the control system 40 is the "brain" of the system. It ensures the stable and safe operation of the entire evaporation process by coordinating the work of each module, adjusting parameters and handling anomalies. It is the core guarantee of system automation and reliability.

[0046] like Figure 1As shown, the plasma generating module 10 includes a magnetic field regulating component for generating a specific magnetic field distribution and constraining and guiding the motion trajectory of the plasma, so that the plasma acts more concentratedly on the metal raw material, thereby improving the heating efficiency and evaporation rate. By optimizing the focusing of the plasma, the heating effect is enhanced, and the energy utilization efficiency and evaporation efficiency of the system are improved, which is a functional enhancement of the plasma generating module 10. The conveying device 21 in the metal raw material supply module 20 is for quantitative delivery, and the amount of metal raw material conveyed each time is accurately controlled according to the instructions of the control system 40. By accurately controlling the raw material supply amount, the raw material supply is prevented from being excessive or insufficient to affect the evaporation quality, and the process stability is improved, which is a guarantee of the raw material supply accuracy.

[0047] like Figure 1 As shown, the driving mechanism in the base film carrying and transporting module 30 can control the precise movement of the base film in the X, Y, and Z directions, and the movement accuracy can reach the micron level to meet the requirements of different evaporation processes for the position accuracy of the base film.

[0048] Through high-precision motion control, it adapts to the stringent requirements of different evaporation processes on the base film position, and improves the system's process flexibility and evaporation accuracy.

[0049] like Figure 1 As shown, the vacuum chamber module includes a gas introduction system, which introduces reaction gas into the vacuum chamber. The reaction gas reacts chemically with the plasma and evaporated metal atoms, thereby forming a metallized film with specific composition and properties on the surface of the base film.

[0050] Expand the system's functions. Through chemical reactions, the film is no longer limited to pure metals. Alloy or compound films (such as metal oxides and nitrides) can be prepared, thereby improving the diversity of film performance and expanding the scope of system application.

[0051] like Figure 1 As shown, the gas introduction system can accurately control the flow rate, pressure and type of the introduced gas, and adjust the parameters in real time according to the requirements of the evaporation process through the control system 40 to ensure that the parameters of the reaction gas match the process requirements, stabilize the chemical reaction process, and ensure the consistency of the film composition and performance, which is a guarantee of the stability of the chemical reaction.

[0052] The control system 40 includes a data recording and analysis unit, which is used to record various working parameters and monitoring data during the evaporation process, analyze and process these data, generate an evaporation process report, and optimize and improve the evaporation process, giving the system "learning and optimization capabilities". Through data accumulation and analysis, it continuously improves process parameters, improves evaporation quality and efficiency, and realizes iterative upgrades of the process.

[0053] like Figure 1As shown, a temperature monitoring device is provided inside the vacuum chamber module for real-time monitoring of the temperature distribution inside the vacuum chamber. The control system 40 adjusts the power of the plasma generating module 10 or the power of other heating components according to the temperature monitoring data to ensure that the evaporation process is carried out in a suitable temperature environment. By temperature monitoring and adjustment, abnormal chamber temperature is avoided. Too high or too low temperature will affect metal evaporation, chemical reaction or base film performance, thereby ensuring the environmental stability of the evaporation process.

[0054] The system includes an exhaust gas treatment module connected to the vacuum chamber, which is used to collect, treat and discharge the exhaust gas generated during the evaporation process. The exhaust gas treatment module includes an exhaust gas collection device, a purification device and an exhaust device. The purification device adsorbs, decomposes or converts harmful substances in the exhaust gas to achieve environmental protection of the evaporation process, avoid harmful substances in the exhaust gas (such as metal vapor, reaction by-products) from polluting the environment, comply with environmental protection regulations, and is a guarantee for the greenness of the system.

[0055] The evaporation method of the metallized thin film evaporation system based on plasma heating includes the following steps:

[0056] S1. Preparation stage: The control system 40 starts the vacuum pumping device of the vacuum chamber and adjusts the vacuum level in the vacuum chamber to a set value. At the same time, the base film carrying and transporting module 30 transports the base film to be evaporated to the carrier and fixes it by adsorption. The control system 40 calibrates the position of the base film to ensure that it is in the preset evaporation area.

[0057] S2. Plasma Generation and Regulation: The control system 40 controls the plasma generation module 10 to start up, ionize the working gas through radio frequency, DC discharge, or microwaves to generate plasma, and adjusts the power, density, and distribution of the plasma according to the evaporation requirements. The magnetic field regulation component simultaneously adjusts the magnetic field distribution to constrain and guide the plasma motion trajectory, so that it acts on the subsequent metal raw material heating area.

[0058] S3. Metal raw material supply and evaporation: The metal raw material supply module 20 accurately delivers a set amount of metal raw material to the plasma heating area through the quantitative delivery device 21 according to the instructions of the control system 40. The plasma heats the metal raw material, causing it to evaporate and form metal vapor;

[0059] S4. Base film evaporation: The drive mechanism of the base film carrying and transporting module 30 drives the base film to move along a set path and speed, so that the surface of the base film evenly receives the metal vapor. At the same time, the vacuum chamber is equipped with a gas introduction system, and the control system 40 controls the introduction of a reaction gas of a set type, flow rate, and pressure into the chamber. The reaction gas chemically reacts with the plasma and the metal vapor to form a metallized film with specific composition and properties on the surface of the base film.

[0060] S5. Process monitoring and adjustment: The control system 40 monitors various parameters of the evaporation process in real time and processes the data through the data recording and analysis unit. If any parameter deviates from the set value, the corresponding parameter is adjusted in time to ensure a stable evaporation process;

[0061] S6, Ending Stage: When the evaporation reaches the set thickness or time, the control system 40 sequentially stops the metal raw material supply, plasma generation, and reaction gas introduction. The base film carrying and transporting module 30 transfers the evaporated base film to the chamber exit area. The vacuum chamber is gradually broken to atmospheric pressure to facilitate removal of the base film.

[0062] S7. Waste gas treatment: During and after the evaporation process, the collection device of the waste gas treatment module collects the waste gas generated in the vacuum chamber. After the purification device adsorbs, decomposes or converts harmful substances, it is discharged in compliance with regulations through the emission device.

[0063] The above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit the same.

Claims

1. A metallized thin film evaporation system based on plasma heating, characterized in that: include: vacuum chamber; A plasma generating module (10) is arranged in the vacuum chamber. The plasma generating module (10) is provided with an ion generator (11) capable of ionizing a working gas to generate plasma by radio frequency, direct current discharge or microwave, and capable of adjusting the power, density and distribution state of the plasma. A metal raw material supply module (20) is connected to the vacuum chamber and provides the metal raw material to be evaporated into the vacuum chamber. The metal raw material supply module (20) is provided with a conveying device (21) that can accurately convey the metal raw material to the plasma heating area according to the evaporation requirements. The base film carrying and transporting module (30) is located in the vacuum chamber and is used to carry the base film to be evaporated and can realize the movement and positioning of the base film in the vacuum chamber. The base film carrying and transporting module (30) is provided with a base film carrying platform, which can adsorb and fix the base film, and is also provided with a driving mechanism, which can make the base film move according to a set path and speed during the evaporation process to ensure the uniformity of the evaporation; The control system (40) is electrically connected to the vacuum chamber module, the plasma generation module (10), the metal raw material supply module (20) and the base film support and transmission module (30) to control and monitor their operation.

2. The plasma heating-based metallized thin film evaporation system according to claim 1, characterized in that: The plasma generating module (10) comprises a magnetic field regulating component for generating a specific magnetic field distribution and constraining and guiding the motion trajectory of the plasma, so that the plasma acts more concentratedly on the metal raw material, thereby improving the heating efficiency and evaporation rate.

3. The plasma heating-based metallized thin film evaporation system according to claim 1, characterized in that: The conveying device (21) in the metal raw material supply module (20) is for quantitative conveying, and the amount of metal raw material conveyed each time is accurately controlled according to the instructions of the control system (40).

4. The plasma heating-based metallized thin film evaporation system according to claim 1, characterized in that: The driving mechanism in the base film carrying and transmission module (30) can control the precise movement of the base film in the X, Y and Z directions, and the movement accuracy can reach the micron level to meet the requirements of different evaporation processes for the position accuracy of the base film.

5. The plasma heating-based metallized thin film evaporation system according to claim 1, characterized in that: The vacuum chamber module includes a gas introduction system, which introduces reaction gas into the vacuum chamber. The reaction gas reacts chemically with the plasma and evaporated metal atoms, thereby forming a metallized film with specific composition and properties on the surface of the base film.

6. The plasma heating-based metallized thin film evaporation system according to claim 5, characterized in that: The gas introduction system can accurately control the flow rate, pressure and type of the introduced gas, and adjust the parameters in real time according to the requirements of the evaporation process through the control system (40).

7. The plasma heating-based metallized thin film evaporation system according to claim 1, characterized in that: The control system (40) includes a data recording and analysis unit for recording various working parameters and monitoring data during the evaporation process, analyzing and processing these data, generating an evaporation process report, and optimizing and improving the evaporation process.

8. The plasma heating-based metallized thin film evaporation system according to claim 1, characterized in that: A temperature monitoring device is provided inside the vacuum chamber module for real-time monitoring of the temperature distribution inside the vacuum chamber. The control system (40) adjusts the power of the plasma generating module (10) or the power of other heating components according to the temperature monitoring data to ensure that the evaporation process is carried out in a suitable temperature environment.

9. The plasma heating-based metallized thin film evaporation system according to claim 1, characterized in that: The system includes an exhaust gas treatment module in communication with the vacuum chamber, for collecting, treating and discharging exhaust gas generated during the evaporation process; The exhaust gas treatment module includes an exhaust gas collection device, a purification device and an emission device. The purification device adsorbs, decomposes or converts harmful substances in the exhaust gas.

10. The evaporation method of the metallized thin film evaporation system based on plasma heating according to any one of claims 1 to 9, characterized in that: The following steps are included: S1, preparation stage: the vacuum pumping device of the vacuum chamber is started by the control system (40), and the vacuum degree in the vacuum chamber is adjusted to a set value. At the same time, the base film carrying and transporting module (30) transports the base film to be evaporated to the carrying platform and fixes it by adsorption. The control system (40) calibrates the position of the base film to ensure that it is in the preset evaporation area; S2. Plasma generation and regulation: The control system (40) controls the plasma generation module (10) to start, ionizes the working gas by radio frequency, DC discharge or microwave, generates plasma, and adjusts the power, density and distribution of the plasma according to the evaporation requirements. The magnetic field regulation component synchronously adjusts the magnetic field distribution to constrain and guide the motion trajectory of the plasma so that it acts on the subsequent metal raw material heating area; S3. Metal raw material supply and evaporation: The metal raw material supply module (20) accurately delivers a set amount of metal raw material to the plasma heating area through the quantitative delivery device (21) according to the instructions of the control system (40). The plasma heats the metal raw material and evaporates it to form metal vapor; S4, base film evaporation: the driving mechanism of the base film carrying and transporting module (30) drives the base film to move according to the set path and speed, so that the surface of the base film evenly receives the metal vapor. At the same time, the vacuum chamber is provided with a gas introduction system, and the control system (40) controls the introduction of reaction gas of set type, flow rate and pressure into the chamber. The reaction gas reacts chemically with the plasma and the metal vapor to form a metalized film with specific composition and properties on the surface of the base film; S5. Process monitoring and adjustment: The control system (40) monitors various parameters of the evaporation process in real time and processes them through the data recording and analysis unit. If any parameter deviates from the set value, the corresponding parameter is adjusted in time to ensure the stability of the evaporation process; S6, end stage: When the evaporation reaches the set thickness or time, the control system (40) stops the metal raw material supply, plasma generation and reaction gas introduction in sequence, and the base film carrying and transporting module (30) transfers the evaporated metallized film to the chamber exit area; the vacuum chamber is gradually broken to normal pressure to facilitate the removal of the metallized film; S7. Waste gas treatment: During and after the evaporation process, the collection device of the waste gas treatment module collects the waste gas generated in the vacuum chamber. After the purification device adsorbs, decomposes or converts harmful substances, it is discharged in compliance with regulations through the emission device.

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