High sensitivity polymer micro-ring temperature and humidity optical waveguide sensor based on vernier effect

Abstract

The high-sensitivity polymer micro-ring temperature and humidity optical waveguide sensor based on the vernier effect belongs to the technical field of planar optical waveguide integrated devices. The high-sensitivity polymer micro-ring temperature and humidity optical waveguide sensor is composed of a substrate layer, a polymer lower cladding layer, a polymer groove layer, a polymer electrolyte core layer and a polymer upper cladding layer. The polymer electrolyte core layer is a light waveguide structure of a runway type MRR cascade, which is composed of a reference ring, a temperature sensing ring and a humidity sensing ring. The polymer electrolyte core layer material can absorb water molecules in the air, the free ion concentration in the material can change with the change of humidity and temperature, and then the refractive index of the material changes. The high-sensitivity polymer micro-ring temperature and humidity optical waveguide sensor solves the problems of the existing temperature and humidity sensor devices, such as the insufficient integration, sensitivity and anti-interference, realizes the ultra-compact and ultra-high sensitivity temperature and humidity dual-mode sensing, and has the advantages of good flexibility, simple process, low cost, high efficiency and the like. The high-sensitivity polymer micro-ring temperature and humidity optical waveguide sensor is suitable for various scenes which need to precisely control the environment or monitor the real-time change.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of planar optical waveguide integrated devices, and particularly relates to a polymer micro-ring temperature and humidity optical waveguide sensor based on a vernier effect. BACKGROUND

[0002] Temperature and humidity, as key parameters of the environment and physiological state, have important monitoring requirements in many fields such as medical health monitoring, biological reaction process control, industrial automation and modern agriculture. In order to meet the requirements of accurate environmental control and state perception, temperature and humidity sensors need to efficiently and accurately convert the temperature and humidity physical quantities in the environment into electrical signals or optical signals that can be detected and analyzed. Current temperature and humidity measurement technology mainly relies on discrete devices based on electrical principles (such as thermistors and capacitive humidity sensors). Although these technologies are mature, they gradually show limitations when facing the increasing measurement requirements: it is difficult to realize miniaturization and on-chip integration, which limits their application in microsystems; electrical sensors are susceptible to electromagnetic interference and the sensitivity improvement faces physical limits, making it difficult to meet the detection requirements of rapid and weak change signals; and measuring temperature and humidity usually requires two independent sensor units, increasing system complexity, space occupation and cost. In view of the urgent need for integrated and high-performance temperature and humidity sensors, existing research attempts to integrate temperature and humidity sensing functions in a single device unit. However, these integrated schemes often have complex structural designs, requiring high precision and consistency of micro-nano fabrication processes, leading to rising manufacturing costs and declining yield, making it difficult to achieve large-scale, low-cost production and application promotion. Therefore, developing a new type of sensor technology that can simultaneously and rapidly and highly sensitively perceive temperature and humidity changes, with the advantages of compact structure, easy integration, simple preparation process and controllable cost, has become a key problem to be solved in this field. Optical waveguide sensing technology, especially micro-ring resonators based on functional polymer materials, provides a promising technical route for simultaneous sensing of temperature and humidity multi-modal signals due to its inherent high sensitivity, miniaturization, electromagnetic interference resistance and easy on-chip integration. Among them, the vernier effect, as an optical phenomenon that can significantly amplify small resonant wavelength shifts and greatly improve detection sensitivity, provides a new idea for breaking through the performance bottleneck of existing sensors. SUMMARY

[0003] The present application aims at the deficiencies of the existing temperature and humidity sensor in integration, sensitivity and anti-interference performance, and proposes a high-sensitivity polymer micro-ring temperature and humidity optical waveguide sensor based on vernier effect.

[0004] The high-sensitivity polymer micro-ring temperature and humidity optical waveguide sensor based on vernier effect comprises a substrate layer 1, a polymer lower cladding layer 2, a polymer notch layer 3, a polymer electrolyte core layer 4 and a polymer upper cladding layer 5 from bottom to top. Figure 1 The high-sensitivity polymer micro-ring temperature and humidity optical waveguide sensor based on vernier effect comprises a substrate layer 1, a polymer lower cladding layer 2, a polymer notch layer 3, a polymer electrolyte core layer 4 and a polymer upper cladding layer 5 from bottom to top.

[0005] The high-sensitivity polymer micro-ring temperature and humidity optical waveguide sensor based on vernier effect comprises a substrate layer 1, a polymer lower cladding layer 2, a polymer notch layer 3, a polymer electrolyte core layer 4 and a polymer upper cladding layer 5 from bottom to top. Figure 1 The high-sensitivity polymer micro-ring temperature and humidity optical waveguide sensor based on vernier effect comprises a substrate layer 1, a polymer lower cladding layer 2, a polymer notch layer 3, a polymer electrolyte core layer 4 and a polymer upper cladding layer 5 from bottom to top. Figure 1 The high-sensitivity polymer micro-ring temperature and humidity optical waveguide sensor based on vernier effect comprises a substrate layer 1, a polymer lower cladding layer 2, a polymer notch layer 3, a polymer electrolyte core layer 4 and a polymer upper cladding layer 5 from bottom to top. Figure 2 The high-sensitivity polymer micro-ring temperature and humidity optical waveguide sensor based on vernier effect comprises a substrate layer 1, a polymer lower cladding layer 2, a polymer notch layer 3, a polymer electrolyte core layer 4 and a polymer upper cladding layer 5 from bottom to top. Figure 1 The high-sensitivity polymer micro-ring temperature and humidity optical waveguide sensor based on vernier effect comprises a substrate layer 1, a polymer lower cladding layer 2, a polymer notch layer 3, a polymer electrolyte core layer 4 and a polymer upper cladding layer 5 from bottom to top. Figure 2 The high-sensitivity polymer micro-ring temperature and humidity optical waveguide sensor based on vernier effect comprises a substrate layer 1, a polymer lower cladding layer 2, a polymer notch layer 3, a polymer electrolyte core layer 4 and a polymer upper cladding layer 5 from bottom to top. Figure 1 The high-sensitivity polymer micro-ring temperature and humidity optical waveguide sensor based on vernier effect comprises a substrate layer 1, a polymer lower cladding layer 2, a polymer notch layer 3, a polymer electrolyte core layer 4 and a polymer upper cladding layer 5 from bottom to top. Figure 2 The high-sensitivity polymer micro-ring temperature and humidity optical waveguide sensor based on vernier effect comprises a substrate layer 1, a polymer lower cladding layer 2, a polymer notch layer 3, a polymer electrolyte core layer 4 and a polymer upper cladding layer 5 from bottom to top.

[0006] The polymer under cladding layer 2 is prepared by a spin coating method on the substrate layer 1, the thickness H1 of the substrate layer 1 is 0.2-1mm, and the thickness H2 of the polymer under cladding layer 2 is 2-20μm; the polymer etching groove layer 3 is prepared by a spin coating and photo-curing, the polymer electrolyte core layer 4 is obtained by photo-etching, wet etching, filling and reactive ion etching (RIE) on the polymer etching groove layer 3, the thickness H3 of the polymer electrolyte core layer 4 and the polymer etching groove layer 3 is the same and is 0.5-10μm, and the width W1 of the polymer electrolyte core layer 4 is 0.5-10μm; the polymer upper cladding layer 5 is prepared by a spin coating and photo-curing, the thickness H4 of the polymer upper cladding layer 5 is 2-10μm; the humidity sensing window 6 is obtained by etching the polymer upper cladding layer 5, the thickness of the humidity sensing window 6 is the same as that of the polymer upper cladding layer 5, and the width W3 of the humidity sensing window 6 is 150-950μm; and the temperature sensing window 7 is obtained by vacuum evaporation, spin coating, photo-etching and wet etching, the thickness H5 of the temperature sensing window 7 is 20-200nm, the width W4 of the temperature sensing window 7 is 10-950μm, and W4>W1, W4=2×R4.

[0007] attached Figure 3(a) is a schematic diagram of the polymer electrolyte core layer 4 structure of the high-sensitivity polymer micro-ring temperature and humidity optical waveguide sensor based on the vernier effect of the application, which is a cascaded runway-type micro-ring resonator (MRR) planar optical waveguide structure composed of a first input straight waveguide 8, a second input straight waveguide 9, a first coupling straight waveguide 10, a second coupling straight waveguide 11, a first semicircular waveguide 12, a third coupling straight waveguide 14, a second semicircular waveguide 13, a first output straight waveguide 15, a third input straight waveguide 16, a fourth input straight waveguide 17, a fourth coupling straight waveguide 18, a fifth coupling straight waveguide 19, a third semicircular waveguide 20, a first straight waveguide 22, a fourth semicircular waveguide 21, a second output straight waveguide 23, a third output straight waveguide 24, a second straight waveguide 25, a sixth coupling straight waveguide 26, a fourth output straight waveguide 27, a fifth input straight waveguide 28, a sixth input straight waveguide 29, a seventh coupling straight waveguide 30, a third straight waveguide 31, an eighth coupling straight waveguide 32, a fifth semicircular waveguide 33, a ninth coupling straight waveguide 34, a sixth semicircular waveguide 36, a fourth straight waveguide 37, a tenth coupling straight waveguide 35, a fifth output straight waveguide 38, and a sixth output straight waveguide 39; the first input straight waveguide 8, the second input straight waveguide 9, the first coupling straight waveguide 10, the first output straight waveguide 15, the third input straight waveguide 16, the fourth input straight waveguide 17, the fourth coupling straight waveguide 18, the second output straight waveguide 23, and the third output straight waveguide 24 are sequentially connected from left to right to form a downlink straight waveguide; the second straight waveguide 25, the sixth coupling straight waveguide 26, the fourth output straight waveguide 27, the fifth input straight waveguide 28, the sixth input straight waveguide 29, the seventh coupling straight waveguide 30, and the third straight waveguide 31 are sequentially connected from right to left to form a middle straight waveguide; the fourth straight waveguide 37, the tenth coupling straight waveguide 35, the fifth output straight waveguide 38, and the sixth output straight waveguide 39 are sequentially connected from left to right to form an uplink straight waveguide; the second coupling straight waveguide 11, the first semicircular waveguide 12, the third coupling straight waveguide 14, and the second semicircular waveguide 13 are sequentially connected in a ring to form a reference ring (MRR F ) of the runway-type micro-ring resonator (MRR) structure; the fifth coupling straight waveguide 19, the third semicircular waveguide 20, the first straight waveguide 22, and the fourth semicircular waveguide 21 are sequentially connected in a ring to form a temperature sensing ring (MRR T ) of the runway-type micro-ring resonator (MRR) structure; the eighth coupling straight waveguide 32, the fifth semicircular waveguide 33, the ninth coupling straight waveguide 34, and the sixth semicircular waveguide 36 are sequentially connected in a ring to form a humidity sensing ring (MRR H ) of the runway-type micro-ring resonator (MRR) structure; the reference ring (MRR F ) and the temperature sensing ring (MRR T ) are located between the downlink straight waveguide and the middle straight waveguide, and the humidity sensing ring (MRR H ) is located between the middle straight waveguide and the uplink straight waveguide; in the direction of the sensor from left to right, the humidity sensing ring (MRRH ) is arranged in front of the reference ring (MRR F ) is arranged in front of the temperature sensing ring (MRR F ) is arranged in front of the temperature sensing ring (MRR T ); the first input straight waveguide 8 is an optical signal input port, the third output straight waveguide 24 is a temperature sensing output port, and the sixth output straight waveguide 39 is a humidity sensing output port; the downlink straight waveguide, the intermediate straight waveguide, the uplink straight waveguide, the second coupling straight waveguide 11, the third coupling straight waveguide 14, the fifth coupling straight waveguide 19, the first straight waveguide 22, the eighth coupling straight waveguide 32, and the ninth coupling straight waveguide 34 are arranged in parallel with each other, and the first coupling straight waveguide 10 and the second coupling straight waveguide 11, the fourth coupling straight waveguide 18 and the fifth coupling straight waveguide 19, the seventh coupling straight waveguide 30 and the eighth coupling straight waveguide 32, the third coupling straight waveguide 14 and the sixth coupling straight waveguide 26, and the ninth coupling straight waveguide 34 and the tenth coupling straight waveguide 35 respectively constitute a coupling structure; the polymer upper cladding layer 5 above the area where the humidity sensing ring is located is etched away to form a humidity sensing window 6 with a rectangular groove structure, the humidity sensing window 6 and the center of symmetry of the humidity sensing ring are arranged in coincidence, most of the fifth semicircular waveguide 33 and the sixth semicircular waveguide 36 are exposed in the humidity sensing window 6, while the eighth coupling straight waveguide 32 and the ninth coupling straight waveguide 34 and a small part of the fifth semicircular waveguide 33 and the sixth semicircular waveguide 36 connected thereto are not exposed; a temperature sensing window 7 is prepared on the polymer upper cladding layer 5 above the area where the temperature sensing ring is located, the temperature sensing window 7 is a combined structure of a middle rectangle and two identical semicircles at both ends, and the temperature sensing window 7 covers all the remaining waveguides in the temperature sensing ring except the fifth coupling straight waveguide 19 and a small part of the third semicircular waveguide 20 and the fourth semicircular waveguide 21 connected to the fifth coupling straight waveguide 19; the length direction edge of the humidity sensing window 6 is parallel to the intermediate straight waveguide, and the middle rectangle edge of the temperature sensing window 7 is parallel to the intermediate straight waveguide.

[0008] The width W1 of all waveguides in the polymer electrolyte core layer 4 is the same and is 0.5 μm to 10 μm; the length L1 of the first input straight waveguide 8 is 100 μm to 2000 μm; the length L2 of the second input straight waveguide 9, the first output straight waveguide 15, the fourth output straight waveguide 27, and the radius R1 of the first semicircular waveguide 12 and the second semicircular waveguide 13 are the same and are 100 μm to 500 μm; the length L3 of the first coupling straight waveguide 10, the second coupling straight waveguide 11, the third coupling straight waveguide 14, the fourth coupling straight waveguide 18, the fifth coupling straight waveguide 19, the sixth coupling straight waveguide 26, the seventh coupling straight waveguide 30, the eighth coupling straight waveguide 32, the ninth coupling straight waveguide 34, the tenth coupling straight waveguide 35, and the first straight waveguide 22 are the same and are 100 μm to 500 μm; the waveguide center coupling interval W2 between the first coupling straight waveguide 10 and the second coupling straight waveguide 11, the third coupling straight waveguide 14 and the sixth coupling straight waveguide 26, the fourth coupling straight waveguide 18 and the fifth coupling straight waveguide 19, the seventh coupling straight waveguide 30 and the eighth coupling straight waveguide 32, and the ninth coupling straight waveguide 34 and the tenth coupling straight waveguide 35 is the same and is 1 μm to 8 μm, and W2 > W1; the length L4 of the third input straight waveguide 16 is 100 μm to 1000 μm; the length L5 of the fourth input straight waveguide 17 and the second output straight waveguide 23 and the radius R2 of the third semicircular waveguide 20 and the fourth semicircular waveguide 21 are the same and are 100 μm to 500 μm; the length L6 of the third output straight waveguide 24 is 100 μm to 1000 μm; the length L7 of the second straight waveguide 25, the third straight waveguide 31, and the fourth straight waveguide 37 is the same and is 10 μm to 100 μm; the length L8 of the fifth input straight waveguide 28 is 50 μm to 500 μm; the length L9 of the sixth input straight waveguide 29 and the fifth output straight waveguide 38 and the radius R3 of the fifth semicircular waveguide 33 and the sixth semicircular waveguide 36 are the same and are 100 μm to 500 μm; and the length L 10 of the sixth output straight waveguide 39 is 850 μm to 5500 μm, and L 10 =L8+2×L2+2×L3+L4+2×L5+L6.

[0009] The (b) in the accompanying Figure 3 is a structure diagram of a humidity sensing window 6 and a temperature sensing window 7 of the temperature and humidity optical waveguide sensor; the width W3 of the humidity sensing ring (MRR H ) is 150 μm to 950 μm, and W3 < 2×R3; the length L 11 of the humidity sensing ring (MRR H ) is 350 μm to 1600 μm, and L 11 > 2×R3+L3; the width W4 of the middle rectangle of the temperature sensing window 7 is 10 μm to 950 μm, and 2×R2 > W4 > W1, W4 = 2×R4, the length L 12The range is 100μm to 500μm, and L 12 =L3, the radii R4 of the two identical semicircles at both ends are the same, ranging from 200μm to 900μm, and 2×R2>R4>R2.

[0010] The substrate layer 1 material described in this invention is any one of silicon, gallium arsenide, and indium phosphide;

[0011] The polymer lower cladding layer 2, polymer grooved layer 3, and polymer upper cladding layer 5 described in this invention are any one of a series of transparent UV direct-write photoresist materials, including fluorinated bisphenol A phenolic resin (F-SU8), SU82002, SU82005, EpoCore, and EpoClad.

[0012] The polymer electrolyte core layer 4 material described in this invention is a chlorine-containing electrolyte material, PILs-Cl. For details of the material preparation method and experimental spectra, please refer to the references.

[0013] (Yunlong Yu, Zhiyan Ma, Xiaoya Miao, Yanyu Cui, Yaping Song, Sen Liu, Teng Fei, Tong Zhang. Humidity sensors based on cross-linked poly(ionic liquid)s for low humidity sensing. Sensors and Actuators B: Chemical. Volume 399, 2024, 134840, ISSN 0925-4005). First, this material exhibits high transparency and low light absorption loss, and its refractive index is higher than that of the cladding material, ensuring effective transmission of optical signals. Second, it contains a positively charged polymer cross-linked network and negatively charged free ions (Cl). - And free ions Cl - The concentration of [specific element] increases with increasing ambient temperature and humidity. Finally, the refractive index of this material is tunable, and its refractive index is related to the internal free ions Cl [specific element]. - Concentration-related. (See attached image) Figure 4 As shown in (a), the refractive index of the electrolyte material PILs-Cl decreases with increasing temperature, and its thermo-optical coefficient is approximately -9.3 × 10⁻⁶. -4 / ℃; the electrolyte material PILs-Cl can adsorb water molecules in the air, such as... Figure 4 As shown in (b), its refractive index decreases with increasing humidity, and its damping coefficient is approximately -3.1 × 10⁻⁶. -4 / %RH.

[0014] The humidity sensing window 6 described in this invention is an air trough.

[0015] The temperature sensing window 7 described in this invention is an alloy composed of one or more of aluminum, gold, silver, copper and platinum, which have good thermal conductivity.

[0016] As attached Figure 5 The diagram illustrates the working principle of a highly sensitive polymer microring temperature and humidity optical waveguide sensor based on the vernier effect, as described in this invention. The broadband optical signal λ (wavelength range 1270~1360nm, power P range 0.2~2.0mW) input from the input terminal first enters the reference ring (MRR). F Then, the signals enter the temperature sensing loop (MRR) through the transmission port and the downlink port, respectively. T ) and humidity sensing ring (MRR) H MRR T MRR H and MRR F The corresponding resonant wavelengths are respectively λ T , λ H ,and λ F The corresponding free spectral regions are respectively FSR T , FSR H and FSR F ,and FSR F > FSR T , FSR F > FSR H MRR T and MRR H By using MRR F The cascaded configurations achieve the vernier effect separately. For the temperature sensing path, MRR... T With MRR F The cascaded output spectrum is MRR T With MRR F The product of the output spectra, when MRR T The i-th resonant wavelength λ T (i) and MRR F The j-th resonant wavelength λ T (j) When the same, the output spectrum at the temperature sensing output port O1 is at the resonant wavelength. λ C The suppression trough is deepest at wavelength 1, and its depth depends on the overlap of the two ring output spectra at that wavelength. The suppression troughs become smaller at adjacent wavelengths, ultimately resulting in an envelope band-stopped spectrum (spectrum shown in the attached image). Figure 7As shown in (a)). During temperature sensing, when MRR T When the temperature of the upper temperature sensing window changes, the free ions Cl in the electrolyte material PILs-Cl in this region... - Concentration changes, refractive index changes ΔN T MRR T resonant wavelength λ T Offset occurred Δλ T MRR F The resonant wavelength λ F Unchanged, making MRR T The i'th resonant wavelength λ T (i') and MRR F The j'th resonant wavelength λ T (j') overlaps, at which point the output spectrum of the temperature sensor output port O1 is at the new resonant wavelength. λ' C The suppression trough is the deepest, and the entire spectrum is equivalent to a spectral shift in the envelope band-resistive mode with changes in temperature. Δλ C =λ ' C -λ C Therefore, the sensitivity of this temperature sensor S T for:

[0017] ;

[0018] Vernier magnification factor F T for:

[0019] ;

[0020] For MRR H With MRR F The cascaded output spectrum is MRR H With MRR F The product of the output spectrum, unlike temperature sensing, when MRR H The kth resonant wavelength λ H (k) and MRR F The lth resonant wavelength λ H (l) At the same time, the output spectrum of O2 at the humidity sensor output port is at the resonant wavelength. λ CThe peak value is the largest at that wavelength, and its magnitude depends on the overlap of the two ring output spectra at that wavelength. The peak values ​​decrease at adjacent wavelengths, ultimately outputting an envelope bandpass spectrum (spectrum attached). Figure 8 (as shown in (a)). During humidity sensing, when via MRR... H When the relative humidity of the air changes at the humidity sensing window, the electrolyte material PILs-Cl in that area absorbs water molecules from the air, and free ions Cl... - Concentration changes, refractive index changes ΔN H MRR H resonant wavelength λ H Offset occurred Δλ H MRR F The resonant wavelength λ F Unchanged, making MRR H The k'th resonant wavelength λ T (k') and MRR F The l'th resonant wavelength λ T (l') overlaps, at which point the output spectrum of the humidity sensor output port O2 is at this new resonant wavelength. λ' C The peak value is the largest, and the entire spectrum corresponds to a spectral shift in the envelope band pattern with changes in humidity. Δλ C =λ' C -λ C Therefore, the sensitivity of this humidity sensor S H for:

[0021] ;

[0022] Vernier magnification factor F H for:

[0023] ;

[0024] In summary, when the temperature and humidity of the sensing window change, the envelope band blocking spectrum and envelope band passing spectrum output from the corresponding detection port will drift. The amount of drift can be used to detect changes in temperature and humidity, thus achieving ultra-compact and ultra-high sensitivity on-chip dual-modal temperature and humidity sensing. This sensor is suitable for scenarios requiring precise environmental control or real-time monitoring of minute changes, such as precision laboratories and metrology testing, preservation and monitoring of specific items, and biomedical research and cell / tissue culture. Its optical, miniaturized, and anti-interference characteristics further enhance its applicability in complex or micro-systems. Furthermore, this invention contributes to the development of highly integrated, low-cost on-chip integrated optical sensors.

[0025] Compared with existing device structures and fabrication techniques, the advantages of this invention are:

[0026] I. This invention is based on the vernier effect and uses a polymer waveguide structure to design MRR. T and MRR H With the same MRR F Cascaded. This structure significantly amplifies the minute resonant drift of the microrings themselves, thereby achieving high-resolution monitoring of subtle changes in temperature and humidity. Simultaneously, through precise design... FSR T , FSR H and FSR F The difference is small, ensuring that the sensor output spectrum forms a clear periodic envelope (as shown in the attached figure). Figure 7 (a) and Appendix Figure 8 (As shown in (a)). The peak position of this envelope exhibits a continuous linear shift with changes in temperature and humidity, facilitating continuous tracking of the temperature and humidity sensing spectrum. The device has a simple fabrication process, low cost, small size, and high integration.

[0027] Second, compared with traditional electrical sensors, this invention employs a fully optical polymer waveguide sensing mechanism, avoiding electromagnetic interference problems. The electrolyte material PILs-Cl can adsorb water molecules in the air, exhibiting humidity and temperature sensitivity. Combined with the evanescent field enhancement effect of the waveguide, the sensor's sensitivity and signal-to-noise ratio are significantly improved, while also possessing excellent resistance to environmental interference.

[0028] III. In view of the defects that the existing optical sensors are mostly single-parameter temperature or humidity sensors and have cross-sensitivity of temperature and humidity, the cascaded micro-ring structure is innovatively designed. The humidity sensing window is designed as an air slot structure, which effectively blocks the heat conduction path and isolates the interference of temperature change on the humidity sensing area. The temperature sensing window is designed as a high-thermal-conductivity metal contact piece covering the waveguide, which on the one hand rapidly and uniformly transmits the temperature change signal in the sensing area, and on the other hand isolates the penetration of water molecules and eliminates the influence of humidity on temperature measurement. The design realizes the physical spatial decoupling of temperature and humidity signals on a single polymer waveguide for the first time, ensuring independent measurement of the two parameters. At the same time, the spectral characteristics of the temperature and humidity sensing outputs are easy to distinguish (showing independent vernier envelopes), and the drift amount of the envelope peak directly corresponds to the temperature and humidity change value in a linear manner. By tracking the envelope peak center wavelength, the parameter calculation can be realized without complex spectral fitting algorithms, greatly reducing the complexity of system signal processing. BRIEF DESCRIPTION OF DRAWINGS

[0029] Figure 1 A three-dimensional structure diagram of a high-sensitivity polymer micro-ring temperature and humidity optical waveguide sensor based on the vernier effect according to the present application;

[0030] Figure 2 For Figure 1 A cross-sectional schematic diagram of some positions;

[0031] Figure 3 A structure schematic diagram of a polymer electrolyte core layer 4, a humidity sensing window 6 and a temperature sensing window 7 of a high-sensitivity polymer micro-ring temperature and humidity optical waveguide sensor based on the vernier effect according to the present application;

[0032] Figure 4 A relationship curve of the refractive index and temperature and the refractive index and relative temperature of the electrolyte material PILs-Cl of the polymer electrolyte core layer 4 of the high-sensitivity polymer micro-ring temperature and humidity optical waveguide sensor according to the present application;

[0033] Figure 5 A working principle schematic diagram of the high-sensitivity polymer micro-ring temperature and humidity optical waveguide sensor according to the present application;

[0034] Figure 6 A waveguide cross-section light field diagram of the device prepared in Example 1 of the present application;

[0035] Figure 7 A temperature sensing performance relationship curve of the device prepared in Example 1 of the present application;

[0036] Figure 8 A humidity sensing performance relationship curve of the device prepared in Example 1 of the present application;

[0037] Figure 9 A preparation process flowchart of the device in Example 1 of the present application. DETAILED DESCRIPTION

[0038] The application will be described in greater detail with reference to the drawings, in which:

[0039] Figure 2 (a) in FIG. 1 is a schematic diagram of the cross-section at aa' position in Figure 1 (a) in FIG. 1 is a schematic diagram of the cross-section at aa' position in Figure 2 (b) in FIG. 1 is a schematic diagram of the cross-section at bb' position in Figure 1 (b) in FIG. 1 is a schematic diagram of the cross-section at bb' position in Figure 2 (c) in FIG. 1 is a schematic diagram of the cross-section at cc' position in Figure 1 (c) in FIG. 1 is a schematic diagram of the cross-section at cc' position in Figure 3 (a) in FIG. 1 is a schematic diagram of the structure of the polymer electrolyte core layer 4, Figure 3 (b) in FIG. 1 is a schematic diagram of the structure of the humidity sensing window 6 and the temperature sensing window 7; Figure 4 (a) in FIG. 2 is a curve of the refractive index of the electrolyte material PILs-Cl and temperature, Figure 4 (b) in FIG. 2 is a curve of the refractive index of the electrolyte material PILs-Cl and relative humidity; Figure 7 (a) in FIG. 3 is a diagram of the shift of the envelope band-stop spectrum of the temperature sensing output port when the temperature sensing window temperature of the device of Example 1 changes; Figure 7 (b) in FIG. 3 is a diagram of the shift of the envelope band-stop spectrum of the temperature sensing output port when the temperature sensing window temperature of the device of Example 1 changes; Figure 7 (a) in FIG. 4 is a curve of the wavelength corresponding to the deepest wave trough and temperature; Figure 8 (a) in FIG. 5 is a diagram of the shift of the envelope band-pass spectrum of the humidity sensing output port when the relative humidity of the humidity sensing window changes; Figure 8 (b) in FIG. 5 is a diagram of the shift of the envelope band-pass spectrum of the humidity sensing output port when the relative humidity of the humidity sensing window changes; Figure 8 (a) in FIG. 6 is a curve of the wavelength corresponding to the maximum peak and temperature.

[0040] Example 1:

[0041] In this embodiment, the substrate layer 1 of the device is a silicon substrate with a thickness H1 = 0.5 mm.

[0042] In this embodiment, the polymer lower cladding layer 2 is F-SU8 with a thickness H2 = 3 μm; the polymer groove layer 3 is F-SU8 with a thickness H3 = 2 μm; and the polymer upper cladding layer 5 is F-SU8 with a thickness H4 = 3 μm.

[0043] In this embodiment, the polymer electrolyte core layer 4 uses a chlorine-containing polymer electrolyte material PILs-Cl, whose refractive index is sensitive to temperature and humidity. The optical field mode transmitted in the polymer electrolyte core layer 4 was simulated using COMSOL Multiphysics software, as shown in the attached figure. Figure 6 As shown, low-loss fundamental mode transmission can be achieved when the thickness H3=2μm and the width W1=2μm of the polymer electrolyte core layer 4.

[0044] The specific structural parameters of the polymer micro-ring temperature and humidity optical waveguide sensor based on the vernier effect described in this embodiment are as follows: the length L1 of the first input straight waveguide 8 is 500 μm; the length L2 of the second input straight waveguide 9, the first output straight waveguide 15, and the fourth output straight waveguide 27 is the same as the radius R1 of the first semicircular waveguide 12 and the second semicircular waveguide 13, which is 312.10 μm; the length L3 of the first coupled straight waveguide 10, the second coupled straight waveguide 11, the third coupled straight waveguide 14, the fourth coupled straight waveguide 18, the fifth coupled straight waveguide 19, the sixth coupled straight waveguide 26, the seventh coupled straight waveguide 30, the eighth coupled straight waveguide 32, the ninth coupled straight waveguide 34, the tenth coupled straight waveguide 35, and the first straight waveguide 22 is 300 μm; the lengths of the first coupled straight waveguide 10, the second coupled straight waveguide 11, the third coupled straight waveguide 14, the sixth coupled straight waveguide 26, and the fourth coupled straight waveguide 18 are all 300 μm. The center-to-center spacing W2 between the coupled waveguides 19, 30, 32, 34, and 35 is 4.12 μm; the length L4 of the third input straight waveguide 16 is 200 μm; the length L5 of the fourth input straight waveguide 17 and the second output straight waveguide 23 is the same as the radius R2 of the third semicircular waveguide 20 and the fourth semicircular waveguide 21, which is 310.35 μm; the length L6 of the third output straight waveguide 24 is 500 μm; the length L7 of the second straight waveguide 25, the third straight waveguide 31, and the fourth straight waveguide 37 is 20 μm; the length L8 of the fifth input straight waveguide 28 is 200 μm; the length L9 of the sixth input straight waveguide 29 and the fifth output straight waveguide 38 is the same as the radius R3 of the fifth semicircular waveguide 33 and the sixth semicircular waveguide 36, which is 311.94 μm; the length L of the sixth output straight waveguide 39 is... 10 It is 2744.9 μm.

[0045] In this embodiment, the humidity sensing window 6 has the same thickness as H4, a width W3 of 600μm, and a length L. 11 The thickness of the temperature sensing window 7 (H5) is 60 nm, the width of the central rectangle (W4) is 600 μm, and the length (L) is 1000 μm. 12 The radius of the semicircles at both ends is 300μm, and the radius of the semicircles at both ends is R4.

[0046] In this embodiment, the optical signal wavelength λ is selected to be in the range of 1270~1360nm, and the optical power is...P The temperature sensor window has a temperature range of 25.0~25.4℃ and a relative humidity range of 52%~57%RH.

[0047] In this embodiment, the device receives a broadband optical signal from the input signal terminal. When the temperature of the temperature sensing window changes, the output spectrum obtained at the temperature sensing output detection port is shown in the attached figure. Figure 7 As shown in (a), at a temperature T = 25.0℃, the temperature sensor output port obtains the envelope bandstop spectrum with the deepest suppression trough at the resonant wavelength of 1282.66nm. This spectrum varies with the temperature of the temperature sensing window. T As the value gradually increases, the envelope band blocking mode spectrum undergoes a red shift, and is affected by the attached... Figure 7 As shown in (b), the wavelength corresponding to the deepest suppression trough in the bandgap spectrum exhibits a linear redshift with temperature change, as indicated by the following relationship. When the relative humidity of the air at the humidity sensing window changes, the output spectrum obtained at the humidity sensing output detection port is shown in the attached figure. Figure 8 As shown in (a), at a relative humidity of 52%RH, the humidity sensor output port obtains the envelope bandpass spectrum with the largest peak at the resonant wavelength of 1323.97nm. As the humidity in the humidity sensing window gradually increases, the envelope bandpass spectrum undergoes a blue shift, and is further affected by the surrounding area. Figure 8 As shown in (b), the wavelength corresponding to the highest peak of the envelope bandpass spectrum exhibits a linear blue shift with humidity changes, as indicated by the following relationship. In summary, when the temperature and humidity of the sensing window change, the envelope bandstop and envelope bandpass spectra output from the corresponding detection port will drift. The change in temperature and humidity can be detected based on the amount of wavelength drift. This invention achieves an ultra-compact and ultra-sensitive on-chip dual-modal temperature and humidity sensor, with sensitivities of 148.025 nm / ℃ and -8.504 nm / RH, respectively.

[0048] Example 2:

[0049] The fabrication steps of the polymer microring temperature and humidity optical waveguide sensor based on the vernier effect in this embodiment are as follows: Figure 9 As shown, the specific description is as follows:

[0050] (1) Cleaning Si substrate 1: The Si substrate 1 was ultrasonically cleaned with acetone solution for 15 min; the Si substrate surface was wiped four times in one direction with acetone-soaked cotton balls; the above wiping process was repeated with ethanol-soaked cotton balls to remove acetone residue; after rinsing with deionized water multiple times, the surface was dehydrated by nitrogen blowing technology; the cleaned Si substrate 1 was transferred to a constant temperature oven for drying (temperature 120℃, time 30 min); finally, plasma surface treatment was performed for 90 s.

[0051] (2) Spin-coating F-SU8 polymer undercoat 2 and polymer grooved layer 3: On the surface of the treated Si substrate 1, F-SU8 thin film was prepared by spin-coating at a speed of 2500 r / min for 30 s; followed by pre-baking at 60℃ / 5 min, 90℃ / 10 min, and 120℃ / 10 min to allow the organic solvent to evaporate and allow it to cool naturally to room temperature; after cooling to room temperature, it was exposed for 110 s, followed by exposure at 60℃ / 5 min, 90℃ / 10 min, and 120℃ / 10 min. After a period of post-baking (min), the material was allowed to cool naturally to obtain an F-SU8 polymer lower coating layer 2 with a thickness of approximately 3 μm. Then, it underwent plasma surface treatment for 90 s. On the surface of the plasma-treated F-SU8 polymer lower coating layer 2, the material was homogenized at a speed of 3000 r / min for 30 s. The pre-baking temperature / time was 60℃ / 5 min, 90℃ / 10 min, and 120℃ / 10 min to evaporate the organic solvent. After cooling naturally to room temperature, an F-SU8 polymer grooved layer 3 with a thickness of approximately 2 μm was obtained.

[0052] (3) Photolithography and development of polymer groove layer 3: The designed device structure (corresponding to the attached) Figure 3 The photomask (with the same structure as the core layer structure) in (a) was applied to the negative F-SU8 polymer groove layer 3 and attached to its surface. The non-grooved area was exposed to ultraviolet light at a wavelength of 365 nm for 111 s using an ultraviolet lithography machine. After exposure, it was baked at a temperature / time of 120℃ for 10 min and then allowed to cool naturally to room temperature. Then, wet etching was performed using PGMEA developer to remove the unexposed F-SU8 film, resulting in a clearly visible core layer structure groove morphology. The developer was then washed off the surface with isopropanol solution, followed by washing off the surface with deionized water and drying with nitrogen. The hard film was then baked at a temperature / time of 120℃ for 10 min and allowed to cool naturally to room temperature, thus completing the grooving of the core layer structure of the polymer groove layer 3.

[0053] (4) Spin-coating the polymer electrolyte core layer 4. IRE etching: Spin-coating the electrolyte material PILs-Cl dissolved in methanol solvent (PILs-Cl material mass percentage is 25%, rotation speed is 2000 r / min, time: 20s) onto the entire device surface, and immediately exposing it to ultraviolet light (365nm, 0.12J / cm) after spin-coating. 2photocuring for 30 minutes, and the methanol solvent volatilizes to obtain the inverted-ridge electrolyte material coating, the ridge height in the groove and the groove depth are consistent, and the ridge height and the groove depth are about 2 μm, the electrolyte material thickness on the polymer groove layer 3 in the non-groove area is about 1 μm; then the IRE is used to etch the excess electrolyte material PILs-Cl (under the power of 200 W, the O2:Ar2 mixed gas with the volume ratio of 4:1 is introduced, and etching is performed for 4 min), and finally the waveguide structure in which only the rectangular polymer groove layer 3 contains the electrolyte material PILs-Cl is obtained;

[0054] (5) spin coating F-SU8 polymer upper cladding layer 5: on the surface of the prepared waveguide structure, the F-SU8 upper cladding layer is prepared by using the spin coating process, the rotation speed is 2500 r / min, and the time is 30 s; then pre-baking is performed, the temperature / time is 60 °C / 5 min, 90 °C / 10 min and 120 °C / 10 min, the organic solvent volatilizes, and then natural cooling is performed to room temperature, and the F-SU8 polymer upper cladding layer 5 with a thickness of about 3 μm is obtained; the designed humidity sensing window photoetching mask (the structure is the same as that of the humidity sensing window structure) is covered on the polymer groove layer 3 negative F-SU8 film and closely attached to the surface, the non-humidity sensing window area is exposed to ultraviolet light with a wavelength of 350-400 nm by using the ultraviolet photoetching machine for 111 s, pre-baking is performed at a temperature / time of 120 °C / 10 min after the exposure, and then natural cooling is performed to room temperature;

[0055] (6) evaporation of aluminum film 6' and spin coating of BP212: a 60 nm thick aluminum metal film 6' is evaporated on the polymer upper cladding layer 5 without etching the humidity sensing window by using the vacuum evaporation process, the positive BP-212 ultraviolet curing photoresist is spin coated on the aluminum film 6', the rotation speed is 2500 r / min, and the time is 20 s; then pre-baking is performed at 90 °C / 20 min, and natural cooling is performed to room temperature;

[0056] (7) Etching of temperature sensing window 7: Cover the designed photoetching mask plate (structure same as temperature sensing window structure) of temperature sensing window structure to the surface of positive BP-212 ultraviolet curing photoresist film, and expose to 365nm wavelength for 4s through ultraviolet photoetching machine; then develop with 5% NaOH solution, remove the exposed BP-212 film in the non-temperature sensing window area, and then perform 90℃ / 15min heating after baking, and naturally cool to room temperature; then wet etch the sample with 5% NaOH solution, remove the aluminum film without BP-212 film covering, and obtain the clear temperature sensing window 7 shape; then wash the residual NaOH solution with deionized water, clean repeatedly with deionized water and dry with nitrogen; then wash the BP-212 photoresist on the aluminum electrode 6 with ethanol, and finally wash the excess ethanol solution with deionized water and dry, to obtain the temperature sensing window 7;

[0057] (8) Etching of humidity sensing window 6: Wet etch the F-SU8 film in the humidity sensing window area which is not exposed in step (5) with developing solution PGMEA, to obtain the humidity sensing window air groove morphology; then wash the surface developing solution with isopropyl alcohol solution, and then wash the surface isopropyl alcohol solution with deionized water and dry with nitrogen; then perform 120℃ / 10min baking to harden the film, and then wait for natural cooling to room temperature, to obtain the humidity sensing window 6; finally obtain the polymer micro-ring temperature and humidity optical waveguide sensor based on vernier effect.

Claims

1. A highly sensitive polymer microring temperature and humidity optical waveguide sensor based on the vernier effect, characterized in that: From bottom to top, it consists of a substrate layer (1), a polymer lower cladding layer (2), a polymer grooved layer (3), a polymer electrolyte core layer (4), and a polymer upper cladding layer (5). The polymer grooved layer (3) and the polymer electrolyte core layer (4) are located between the polymer lower cladding layer (2) and the polymer upper cladding layer (5). The polymer electrolyte core layer (4) is a cascaded racetrack-shaped micro-ring resonator planar optical waveguide structure, consisting of a first input straight waveguide (8), a second input straight waveguide (9), a first coupled straight waveguide (10), a second coupled straight waveguide (11), a first semicircular waveguide (12), a third coupled straight waveguide (14), a second semicircular waveguide (13), a first output straight waveguide (15), a third input straight waveguide (16), and a fourth input straight waveguide (8). 17), Fourth Coupled Straight Waveguide (18), Fifth Coupled Straight Waveguide (19), Third Semicircular Waveguide (20), First Straight Waveguide (22), Fourth Semicircular Waveguide (21), Second Output Straight Waveguide (23), Third Output Straight Waveguide (24), Second Straight Waveguide (25), Sixth Coupled Straight Waveguide (26), Fourth Output Straight Waveguide (27), Fifth Input Straight Waveguide (28), Sixth Input Straight Waveguide (29), Seventh Coupled Straight Waveguide (30), Third Straight Waveguide (31), Eighth Coupled Straight Waveguide (32), Fifth Semicircular Waveguide (33), Ninth Coupled Straight Waveguide (34), Sixth Semicircular Waveguide (36), Fourth Straight Waveguide (37), Tenth Coupled Straight Waveguide (35), Fifth Output Straight Waveguide (38) and Sixth Output Straight Waveguide (39) The first input straight waveguide (8), the second input straight waveguide (9), the first coupled straight waveguide (10), the first output straight waveguide (15), the third input straight waveguide (16), the fourth input straight waveguide (17), the fourth coupled straight waveguide (18), the second output straight waveguide (23), and the third output straight waveguide (24) are connected sequentially from left to right to form the downlink straight waveguide; the second straight waveguide (25), the sixth coupled straight waveguide (26), the fourth output straight waveguide (27), the fifth input straight waveguide (28), the sixth input straight waveguide (29), the seventh coupled straight waveguide (30), and the third straight waveguide (31) are connected sequentially from right to left to form the middle straight waveguide; the fourth straight waveguide (37) and the tenth coupled straight waveguide (35) are connected sequentially from right to left to form the middle straight waveguide; The fifth output straight waveguide (38) and the sixth output straight waveguide (39) are connected sequentially from left to right to form the uplink straight waveguide; the second coupled straight waveguide (11), the first semicircular waveguide (12), the third coupled straight waveguide (14), and the second semicircular waveguide (13) are connected in a ring to form the reference ring of the racetrack-shaped microring resonator structure; the fifth coupled straight waveguide (19), the third semicircular waveguide (20), the first straight waveguide (22), and the fourth semicircular waveguide (21) are connected in a ring to form the temperature sensing ring of the racetrack-shaped microring resonator structure; the eighth coupled straight waveguide (32), the fifth semicircular waveguide (33), the ninth coupled straight waveguide (34), and the sixth semicircular waveguide (36) are connected in a ring to form the humidity sensing ring of the racetrack-shaped microring resonator structure;The reference ring and temperature sensing ring are located between the downlink straight waveguide and the intermediate straight waveguide, and the humidity sensing ring is located between the intermediate straight waveguide and the uplink straight waveguide; according to the sensor direction from left to right, the humidity sensing ring is set in front of the reference ring, and the reference ring is set in front of the temperature sensing ring; the first input straight waveguide (8) is the optical signal input port, the third output straight waveguide (24) is the temperature sensing output port, and the sixth output straight waveguide (39) is the humidity sensing output port; downlink straight waveguide, intermediate straight waveguide, uplink straight waveguide, second coupling straight waveguide (1 1) The third coupled straight waveguide (14), the fifth coupled straight waveguide (19), the first straight waveguide (22), the eighth coupled straight waveguide (32), and the ninth coupled straight waveguide (34) are arranged in parallel with each other. The first coupled straight waveguide (10), the second coupled straight waveguide (11), the fourth coupled straight waveguide (18), the fifth coupled straight waveguide (19), the seventh coupled straight waveguide (30), the eighth coupled straight waveguide (32), the third coupled straight waveguide (14), the sixth coupled straight waveguide (26), the ninth coupled straight waveguide (34), and the tenth coupled straight waveguide (34) are arranged in parallel with each other. Coupled straight waveguides (35) respectively constitute coupling structures; the polymer cladding (5) above the area where the humidity sensing ring is located is etched away to form a humidity sensing window (6) with a rectangular groove structure. The humidity sensing window (6) and the center of symmetry of the humidity sensing ring are set to coincide. Most of the fifth semicircular waveguide (33) and the sixth semicircular waveguide (36) are exposed in the humidity sensing window (6), while the eighth coupled straight waveguide (32) and the ninth coupled straight waveguide (34) are not exposed; the polymer cladding (5) above the area where the temperature sensing ring is located ( 5) A temperature sensing window (7) is fabricated on top of the above. The temperature sensing window (7) is a combination structure of a central rectangle and two identical semicircles at both ends of a metal heat-conducting sheet. The temperature sensing window (7) covers all the remaining waveguides in the temperature sensing ring except for the fifth coupled straight waveguide (19) and a small part of the third semicircular waveguide (20) and the fourth semicircular waveguide (21) connected to the fifth coupled straight waveguide (19). The side of the humidity sensing window (6) in the length direction is parallel to the central straight waveguide, and the side of the central rectangle of the temperature sensing window (7) is parallel to the central straight waveguide.

2. The highly sensitive polymer microring temperature and humidity optical waveguide sensor based on the vernier effect as described in claim 1, characterized in that: In the polymer electrolyte core layer (4), the width W1 of all waveguides is the same, ranging from 0.5 μm to 10 μm; the length L1 of the first input straight waveguide (8) is 100 μm to 2000 μm; the length L2 of the second input straight waveguide (9), the first output straight waveguide (15), and the fourth output straight waveguide (27) is the same as the radius R1 of the first semicircular waveguide (12) and the second semicircular waveguide (13), ranging from 100 μm to 500 μm; the first coupled straight waveguide (10), the second coupled straight waveguide (11), the third coupled straight waveguide (14), and the fourth... Coupled straight waveguides (18), (19), (26), (30), (32), (34), (35), and (22) have the same length L3, ranging from 100 μm to 500 μm; the first coupled straight waveguide (10), the second coupled straight waveguide (11), the third coupled straight waveguide (14), the sixth coupled straight waveguide (26), the fourth coupled straight waveguide (18), the fifth coupled straight waveguide (19), and the seventh coupled straight waveguide (30), the eighth coupled straight waveguide (32), the ninth coupled straight waveguide (34), the tenth coupled straight waveguide (35), and the first straight waveguide (22) have the same length L3, ranging from 100 μm to 500 μm; the first coupled straight waveguide (10), the second coupled straight waveguide (11), the third coupled straight waveguide (14), the sixth coupled straight waveguide (26), the fourth coupled straight waveguide (18), the fifth coupled straight waveguide (19), and the tenth coupled straight waveguide (35) have the same length L3, ranging from 100 μm to 500 μm. The waveguide center coupling spacing W2 between the seventh coupled straight waveguide (30) and the eighth coupled straight waveguide (32), the ninth coupled straight waveguide (34) and the tenth coupled straight waveguide (35) is the same, ranging from 1 μm to 8 μm, and W2 > W1; the length L4 of the third input straight waveguide (16) is 100 μm to 1000 μm; the length L5 of the fourth input straight waveguide (17) and the second output straight waveguide (23) is the same as the radius R2 of the third semicircular waveguide (20) and the fourth semicircular waveguide (21), ranging from 100 μm to 500 μm; the third output straight waveguide (24) The length L6 is 100μm~1000μm; the length L7 of the second straight waveguide (25), the third straight waveguide (31), and the fourth straight waveguide (37) is the same, 10μm~100μm; the length L8 of the fifth input straight waveguide (28) is 50μm~500μm; the length L9 of the sixth input straight waveguide (29) and the fifth output straight waveguide (38) is the same as the radius R3 of the fifth semicircular waveguide (33) and the sixth semicircular waveguide (36), 100μm~500μm; the length L of the sixth output straight waveguide (39) is... 10 The range is 850μm to 5500μm, and L 10 =L8+2×L2+2×L3+L4+2×L5+L6; The width W3 of the humidity sensing ring is 150μm~950μm, and W3 < 2×R3; the length L of the humidity sensing ring 11 The range is 350μm to 1600μm, and L 11 >2×R3+L3; The width W4 of the middle rectangle of the temperature sensing window (7) is 10μm~950μm, and 2×R2>W4>W1, W4=2×R4, and the length L of the middle rectangle is... 12 The range is 100μm to 500μm, and L 12 =L3, the radii R4 of the two identical semicircles at both ends are the same, ranging from 200μm to 900μm, and 2×R2>R4>R2.

3. The highly sensitive polymer microring temperature and humidity optical waveguide sensor based on the vernier effect as described in claim 1, characterized in that: The substrate layer (1) is made of any one of silicon, gallium arsenide, and indium phosphide; the polymer lower cladding layer (2), polymer groove layer (3), and polymer upper cladding layer (5) are made of any one of fluorinated bisphenol A phenolic resin, SU82002, SU82005, EpoCore, and EpoClad; the polymer electrolyte core layer (4) is made of chlorine-containing electrolyte material PILs-Cl; and the temperature sensing window (7) is made of an alloy composed of one or more of aluminum, gold, silver, copper, and platinum.

4. The highly sensitive polymer microring temperature and humidity optical waveguide sensor based on the vernier effect as described in claim 1, characterized in that: The thickness H1 of the substrate layer (1) is 0.2~1mm, the thickness H2 of the polymer lower cladding layer (2) is 2μm~20μm, the thickness H3 of the polymer groove layer (3) and the polymer electrolyte core layer (4) is the same, which is 0.5μm~10μm, the thickness H4 of the polymer upper cladding layer (5) is 2μm~10μm, the thickness of the humidity sensing window (6) is the same as the thickness of the polymer upper cladding layer (5), and the thickness H5 of the temperature sensing window (7) is 20nm~200nm.

5. The highly sensitive polymer microring temperature and humidity optical waveguide sensor based on the vernier effect as described in claim 1, characterized in that: The wavelength range of the input optical signal λ in the first input straight waveguide (8) is 1270~1360nm, and the power P ranges from 0.2 to 2.0mW.

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