An active-clamp resonant driving circuit and device

Abstract

The application discloses an active clamp resonant driving circuit and device, comprising a power supply module, an energy storage clamp module, a switch group module, an additional capacitor module and an output driving module. The device corresponds to the circuit. Through the energy storage clamp module and the switch group module, the application can realize wide-range duty cycle adjustment of quasi-square wave driving output at a frequency of tens of megahertz, adapt to the duty cycle requirements of different working conditions, support a certain width of frequency band work through the same set of circuit parameters, greatly improve the flexibility of super-high frequency power converter design, and reduce the circuit redesign cost under different frequency scenes. Through the energy storage clamp module, the coupling degree of the driving waveform and the line parasitic parameters is effectively reduced, the driving circuit still has good stability when working at high frequency, the anti-interference ability is enhanced, the adverse effects of parasitic parameters or external interference on the driving performance are avoided, and the reliability of the high-frequency work of the power electronic switching device is ensured.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of power electronic circuits, in particular to an active clamping resonant driving circuit and device. BACKGROUND

[0002] With the development of power electronic technology, there is a surge in demand for megahertz-level power converters with high power density, and conventional driving chips are difficult to meet the requirements of megahertz-level driving. Although resonant gate drive is used to reduce gate loss, it has some shortcomings. Specifically, first, the duty cycle of single-tube type is difficult to adjust, the working frequency range is narrow, and it is sensitive to parasitic parameters. Second, the dead time and timing of bridge type are difficult to control at tens of megahertz, and the driving speed is limited by the discontinuous resonant current, which cannot balance high frequency, wide duty cycle adjustment and fast driving speed.

[0003] A Chinese invention patent application with the application publication number CN116015024A discloses an active resonant driving circuit and control method. The invention is based on hysteresis control driving current and does not use clamping capacitor. The output is current control, and the frequency is only up to kilohertz level, which is difficult to meet the requirements of megahertz-level driving.

[0004] In summary, there is an urgent need for a new driving scheme that adapts to megahertz-level high frequency, adjustable duty cycle and fast driving speed. SUMMARY

[0005] The main purpose of the present application is to provide an active clamping resonant driving circuit and device, which aims to solve the technical problems of megahertz-level high frequency driving duty cycle difficult to adjust, slow switching speed, narrow working frequency range, sensitive to parasitic parameters and complex control implementation in the prior art.

[0006] To achieve the above-mentioned purpose, the present application provides an active clamping resonant driving circuit, comprising:

[0007] A power supply module for providing direct current energy required for driving;

[0008] An energy storage clamping module for energy storage and voltage clamping, comprising a power supply connection end, a ground end, an intermediate connection point and a clamping output end, the power supply connection end is connected with the positive electrode of the power supply module, and the ground end is connected with the negative electrode of the power supply module;

[0009] A switch group module for controlling the switching of the circuit working state, comprising a common connection end, a ground connection end and a clamping connection end, the common connection end is connected with the intermediate connection point of the energy storage clamping module, the ground connection end is connected with the negative electrode of the power supply module, and the clamping connection end is connected with the clamping output end of the energy storage clamping module;

[0010] An additional capacitor module is configured to cooperate with the resonant driving, comprising a first resonant branch and a second resonant branch, the first resonant branch is connected to the common connection end and the ground connection end of the switch group module respectively, and the second resonant branch is connected to the common connection end and the clamping connection end of the switch group module respectively;

[0011] An output driving module is configured to output the driving signal after the clamping control and the resonant adjustment of the energy storage clamping module, the switch group module and the additional capacitor module to a load, the input end of the output driving module is connected to the common connection end of the switch group module, and the output end of the output driving module is connected to the load, and the load at least comprises a power electronic switching device to be driven.

[0012] As a preferred, the energy storage clamping module comprises an input capacitor, a choke inductor and a clamping capacitor; the switch group module comprises a first switch tube and a second switch tube; and the additional capacitor module comprises a first additional capacitor and a second additional capacitor.

[0013] As a preferred, the connection relationship of the energy storage clamping module is as follows:

[0014] The first end of the input capacitor, the first end of the choke inductor and the first end of the clamping capacitor are connected in common to form the power connection end of the energy storage clamping module, the second end of the input capacitor is the ground end of the energy storage clamping module, the second end of the choke inductor is the intermediate connection point of the energy storage clamping module, and the second end of the clamping capacitor is the clamping output end of the energy storage clamping module.

[0015] As a preferred, the connection relationship of the switch group module is as follows:

[0016] The drain of the first switch tube and the source of the second switch tube are connected in common to form the common connection end of the switch group module, the source of the first switch tube is the ground connection end of the switch group module, and the drain of the second switch tube is the clamping connection end of the switch group module.

[0017] As a preferred, the connection relationship of the additional capacitor module is as follows:

[0018] The first additional capacitor constitutes the first resonant branch, and the two ends of the first additional capacitor are connected to the common connection end and the ground connection end of the switch group module respectively;

[0019] The second additional capacitor constitutes the second resonant branch, and the two ends of the second additional capacitor are connected to the common connection end and the clamping connection end of the switch group module respectively.

[0020] As a preferred, the first switch tube and the second switch tube are alternately turned on, and the duty cycle of the first switch tube is defined as The duty cycle of the second switch tube is , and .

[0021] As preferred, the driving signal output by the output driving module is a quasi-square wave, the duty cycle of the quasi-square wave is , and the frequency of the driving signal is equal to the working frequency of the first switch tube and the second switch tube.

[0022] As preferred, the driving voltage output by the output driving module is in the relationship of , the duty cycle of the first switch tube , the output voltage of the power supply module .

[0023] As preferred, the first switch tube and the second switch tube are both unidirectional switch tubes; the power electronic switching device to be driven at least includes a silicon carbide MOSFET.

[0024] To achieve the above-mentioned purpose, the application further provides an active clamping resonant driving device, which comprises the active clamping resonant driving circuit as described above.

[0025] Beneficial effects: the active clamping resonant driving circuit and device of the application can realize wide-range duty cycle adjustment of quasi-square wave driving output under tens of megahertz frequency, adapt to the duty cycle requirements of different working conditions, support a certain width of frequency band work through the same set of circuit parameters, greatly improve the flexibility of super-high frequency power converter design, and reduce the circuit redesign cost under different frequency scenes; through the cooperation of the clamping capacitor and the choke inductor in the energy storage clamping module, the coupling degree of the driving waveform and the line parasitic parameters is effectively reduced, so that the driving circuit still has good stability when working at high frequency, and the anti-interference ability is enhanced, the adverse effects of parasitic parameters or external interference on the driving performance are avoided, and the reliability of the high-frequency work of the power electronic switching device is ensured. BRIEF DESCRIPTION OF DRAWINGS

[0026] In order to more clearly illustrate the technical solutions in the embodiments of the application or the prior art, the drawings needed to be used in the embodiments or prior art description will be briefly introduced. Obviously, for those skilled in the art, other drawings can also be obtained without creative labor.

[0027] Figure 1 is a circuit structure schematic diagram of the active clamping resonant driving circuit provided by the embodiment of the application;

[0028] Figure 2 This is a schematic diagram of the equivalent structure of the active clamp resonant drive circuit provided in an embodiment of the present invention;

[0029] Figure 3 This is a timing diagram of the active clamping resonant drive circuit provided in an embodiment of the present invention;

[0030] Figure 4 This is a schematic diagram of the equivalent circuit structure of the active clamp resonant drive circuit provided in the embodiment of the present invention in mode 1;

[0031] Figure 5 This is a schematic diagram of the equivalent circuit structure of the active clamp resonant drive circuit provided in the embodiment of the present invention in mode 2;

[0032] Figure 6 This is a schematic diagram of the equivalent circuit structure of the active clamp resonant drive circuit provided in the embodiment of the present invention in mode 3;

[0033] Figure 7 This is a schematic diagram of the equivalent circuit structure of the active clamp resonant drive circuit provided in the embodiment of the present invention in mode 4;

[0034] Figure 8 This is a schematic diagram of the equivalent circuit structure of the active clamp resonant drive circuit provided in the embodiment of the present invention in mode 5.

[0035] Figure 9 This is a schematic diagram of the equivalent circuit structure of the active clamp resonant drive circuit provided in the embodiment of the present invention in mode 6;

[0036] Figure 10 The active clamp resonant drive circuit provided in this embodiment of the invention has a first switching transistor with an output frequency of 13.56MHz and a duty cycle of 50%. S 1 Second switching transistor S 2 Drive voltage and output voltage Vg Waveform diagram;

[0037] Figure 11 The active clamp resonant drive circuit provided in this embodiment of the invention has a first switching transistor at an output frequency of 13.56MHz and a duty cycle of 35%. S 1 Second switching transistor S 2 Drive voltage and output voltage Vg Waveform diagram;

[0038] Figure 12 The active clamp resonant drive circuit provided in this embodiment of the invention has a first switching transistor at an output frequency of 13.56MHz and a duty cycle of 65%.S 1 and the second switch tube S 2 waveform diagram of the driving voltage and the output voltage of the first switch tube Vg

[0039] Figure 13 is the waveform diagram of the driving voltage and the output voltage of the first switch tube S 1 and the second switch tube S 2 waveform diagram of the driving voltage and the output voltage of the first switch tube Vg

[0040] Figure 14 is the waveform diagram of the driving voltage and the output voltage of the first switch tube S 1 and the second switch tube S 2 waveform diagram of the driving voltage and the output voltage of the first switch tube Vg

[0041] The implementation, functional characteristics and advantages of the present application will be further described with reference to the accompanying drawings in conjunction with embodiments. DETAILED DESCRIPTION

[0042] It should be understood that the specific embodiments described herein are intended to be illustrative only and not limiting of the present application.

[0043] With the rapid development of power electronic technology and semiconductor devices in recent years, and the increasing demand of power electronic equipment for high power density, high efficiency and miniaturization, power converters with high switching frequency have attracted more and more attention and have become an important direction of the development of power electronic technology. In some special application occasions, such as plasma power supply, wireless power transmission, induction heating, etc., the power converter even needs to work at a frequency of megahertz or even tens of megahertz, which puts high requirements on the driving circuit of the power device. The conventional driving chip is difficult to meet the above-mentioned needs, and a high-frequency driving circuit needs to be designed for it.

[0044] ​​​In high frequency applications, the gate loss is significant, and the driving is difficult. In order to reduce the gate loss, the resonant gate drive technology is widely researched and used. The resonant gate drive can be divided into single tube drive and bridge drive according to the circuit structure, and can be divided into sine wave drive, trapezoidal wave drive and quasi square wave drive according to the output waveform. Among them, the single tube drive circuit is simple to control, but the duty cycle is difficult to adjust, the output drive is sine wave or trapezoidal wave, the switching speed is slow, and the circuit parameters need to be tuned in a fixed frequency or a narrow frequency range, so there are problems of narrow working frequency range and sensitivity to parasitic parameters. The bridge drive has wide working frequency range, easy to adjust the duty cycle, and the output waveform is quasi square wave, the driving speed and high frequency working characteristics are good, but it is difficult to control the dead time and the complex timing at tens of megahertz frequency, and the driving speed is still limited by the resonant current discontinuity.

[0045] In order to optimize the above driving problem, the embodiment provides an active clamping resonant driving circuit, which has the characteristics of driving frequency up to tens of megahertz, adjustable duty cycle and large driving power.

[0046] Specifically, the embodiment discloses an active clamping resonant driving circuit, which comprises:

[0047] A power module is configured to provide direct current power required for driving;

[0048] An energy storage clamping module is configured to store energy and clamp voltage, and comprises a power connection end, a ground connection end, an intermediate connection point and a clamping output end, the power connection end is connected with the positive pole of the power module, and the ground connection end is connected with the negative pole of the power module;

[0049] A switch group module is configured to control switching of a working state of the circuit, and comprises a common connection end, a ground connection end and a clamping connection end, the common connection end is connected with the intermediate connection point of the energy storage clamping module, the ground connection end is connected with the negative pole of the power module, and the clamping connection end is connected with the clamping output end of the energy storage clamping module;

[0050] An additional capacitor module is configured to cooperate with the resonant driving, and comprises a first resonant branch and a second resonant branch, the first resonant branch is connected with the common connection end and the ground connection end of the switch group module at two ends respectively, and the second resonant branch is connected with the common connection end and the clamping connection end of the switch group module at two ends respectively;

[0051] An output driving module is configured to output a driving signal, which is controlled by the energy storage clamping module, the switch group module and the additional capacitor module, to a load, and an input end of the output driving module is connected with the common connection end of the switch group module, and an output end of the output driving module is connected with the load, and the load at least comprises a power electronic switching device to be driven.

[0052] Referring to Figure 1 the drawings,Figure 1 This is a schematic diagram of the circuit structure of the active clamp resonant drive circuit in this embodiment.

[0053] Specifically, the energy storage clamping module includes an input capacitor, a choke inductor, and a clamping capacitor; the switching module includes a first switching transistor and a second switching transistor; and the auxiliary capacitor module includes a first auxiliary capacitor and a second auxiliary capacitor.

[0054] like Figure 1 As shown, in one specific application of this embodiment, the power module of this embodiment provides power. V in The energy storage clamping module includes an input capacitor. C in Choke inductor L F and clamping capacitor The switch group module includes a first switch transistor. S 1 Second switching transistor S 2 The additional capacitor module includes a first additional capacitor. C F1 Second additional capacitor C F2 .

[0055] Specifically, the connection relationship of the energy storage clamping module is as follows:

[0056] The first end of the input capacitor, the first end of the choke inductor, and the first end of the clamping capacitor are connected together to form the power connection terminal of the energy storage clamping module. The second end of the input capacitor is the ground terminal of the energy storage clamping module, the second end of the choke inductor is the intermediate connection point of the energy storage clamping module, and the second end of the clamping capacitor is the clamping output terminal of the energy storage clamping module.

[0057] like Figure 1 As shown, in one specific application of this embodiment, the input capacitor... C in The first terminal, choke inductor L F First terminal and clamping capacitor The first end is connected to the power supply terminal of the energy storage clamping module, and the input capacitor... C in The second terminal is the grounding terminal of the energy storage clamping module, and the choke inductor. L F The second end is the middle connection point of the energy storage clamping module, and the clamping capacitor. The second end is the clamping output end of the energy storage clamping module.

[0058] Specifically, the connection relationship of the switch group modules is as follows:

[0059] The drain of the first switch tube and the source of the second switch tube are connected in common to form a common connection end of the switch group module, the source of the first switch tube is a ground connection end of the switch group module, and the drain of the second switch tube is a clamping connection end of the switch group module.

[0060] As shown in the drawings, Figure 1 in one specific application of the embodiment, the drain of the first switch tube S 1 and the source of the second switch tube S 2 are connected in common to form a common connection end of the switch group module, the source of the first switch tube S 1 is a ground connection end of the switch group module, and the drain of the second switch tube S 2 is a clamping connection end of the switch group module.

[0061] Specifically, the connection relationship of the additional capacitor module is:

[0062] The first additional capacitor constitutes a first resonant branch, and the two ends of the first additional capacitor are connected to the common connection end and the ground connection end of the switch group module, respectively;

[0063] The second additional capacitor constitutes a second resonant branch, and the two ends of the second additional capacitor are connected to the common connection end and the clamping connection end of the switch group module, respectively.

[0064] As shown in the drawings, Figure 1 in one specific application of the embodiment, the first additional capacitor C F1 constitutes a first resonant branch, and the two ends of the first additional capacitor C F1 are connected to the common connection end and the ground connection end of the switch group module, respectively; the second additional capacitor C F2 constitutes a second resonant branch, and the two ends of the second additional capacitor C F2 are connected to the common connection end and the clamping connection end of the switch group module, respectively.

[0065] Referring to Figure 2 , Figure 2 the equivalent structure diagram of the active clamping resonant driving circuit of the embodiment.

[0066] In actual applications, the gate of the silicon carbide MOSFET to be driven can be equivalent to an equivalent circuit in which a gate inductance Lg , a gate capacitance Cg and a gate resistance Rg are connected in series. It should be noted that the clamping capacitor and the second switch tube S2 interchangeable positions, gate inductance Lg , gate capacitance Cg and gate resistance Rg The interchange of positions does not affect the normal implementation of the embodiment.

[0067] With reference to Figure 1 and Figure 2 , the choke inductance L F is connected in series between the power supply V in , the positive electrode and the first switch tube S 1 ; the clamping capacitor and the second switch tube S 2 are connected in series together, and in parallel with the choke inductance L F ; the first additional capacitor C F1 and the second additional capacitor C F2 are respectively connected in parallel across the first switch tube S 1 and the second switch tube S 2 . The circuit output V g is connected to the gate of the silicon carbide MOSFET to be driven. The embodiment utilizes the clamping effect of the clamping capacitor and the choke inductance L F , and the resonance effect of the first additional capacitor C F1 and the second additional capacitor C F2 , the gate capacitance C g and the gate inductance L g of the silicon carbide MOSFET to achieve high-frequency square wave driving.

[0068] Specifically, the first switch tube and the second switch tube are alternately turned on, the duty ratio of the first switch tube is defined as , the duty ratio of the second switch tube is , and .

[0069] Specifically, the driving signal output by the output driving module is a quasi-square wave, the duty ratio of the quasi-square wave is , and the frequency of the driving signal is equal to the working frequency of the first switch tube and the second switch tube.

[0070] Specifically, the driving voltage output by the output driving module is Duty cycle of the first switching transistor Output voltage of the power module The relationship is .

[0071] Specifically, both the first and second switching transistors are unidirectional switching transistors; the power electronic switching device to be driven includes at least a silicon carbide MOSFET. It should be noted that, in this embodiment, the power electronic switching device to be driven can also be various power electronic switching devices requiring square wave drive, including gallium nitride HEMTs or silicon MOSFETs, and a square wave drive of tens of megahertz can be achieved through reasonable parameter design.

[0072] In one specific application of this embodiment, the first switching transistor S 1 Second switching transistor S 2 All are unidirectional switching transistors and both use gallium nitride (GaN) switching transistors, specifically the GS61004B. It should be noted that if the first and second switching transistors were bidirectional, a diode should be connected in parallel to form a unidirectional switching transistor. Under alternating conduction: First switching transistor... S 1 The second switching transistor is on. S 2 When turned off, the power supply V in Towards choke inductor L F Charging, and simultaneously the gate capacitance of the driven switch. Cg Through the first switching transistor S 1 Discharge energy, drive voltage V g Drop to 0; second switching transistor S 2 The first switching transistor is on. S 1 When turned off, the choke inductor L F Energy is released to the gate of the load switch transistor, and the gate capacitance... Cg Being charged, driving voltage V g Rise, when the driving voltage V g When it rises to a certain value, the clamping capacitor The circuit utilizes the first additional capacitor for clamping. C F1 Second additional capacitor C F2 Gate capacitance Cg and gate inductance Lg Together they participate in resonance to achieve rapid rise and fall of the driving voltage; by adjusting the first additional capacitorC F1 and the second additional capacitance C F2 controls the rise, fall time and oscillation level of the driving voltage V g .

[0073] In an example, the specific parameters of the active-clamp resonant driving circuit of the present embodiment are designed as follows: the choke inductance L F is 500nH, the clamp capacitance is 30nF, the first additional capacitance C F1 is 188pF, the second additional capacitance C F2 is 120pF, the gate inductance L g is 10nH, the gate resistance R g is 2.5 ohms, and the gate capacitance C g is 2800pF.

[0074] Referring to Figure 3 to Figure 9 , wherein, Figure 3 is the timing diagram of the active-clamp resonant driving circuit of the present embodiment, Figure 4 to Figure 9 are the equivalent circuit structure schematic diagrams of the active-clamp resonant driving circuit of the present embodiment in different modes, respectively.

[0075] As shown in Figure 3 to Figure 9 , the active-clamp resonant driving circuit of the present embodiment includes the following 6 modes in one period:

[0076] Mode 1, t∈[t0,t1]: the first switch S 1 is turned on, and the second switch S 2 is turned off. The equivalent circuit structure schematic diagram of the active-clamp resonant driving circuit of the present embodiment is shown in Figure 4 . Since the current i cc is still positive at this time, the second switch S 2 will not be immediately turned off but will first keep the body diode of the second switch S 2 conductive, and the clamp capacitance continues to charge. Due to the clamping effect of the clamp capacitance , v cc only rises slightly, and the output voltage V gStill clamped V in + v cc . That is, the end mode of the last period is briefly maintained until i cc resonates to 0, the body diode of the second switch S 2 turns off, and the next mode is entered.

[0077] Mode 2, t∈[t1, t2]: the first switch S 1 turns on, and the second switch S 2 turns off. The equivalent circuit structure of the active clamped resonant driving circuit of the embodiment is shown in Figure 5 . i cc reverse, the body diode of the second switch S 2 turns off, and the clamping capacitor discharges, and the second additional capacitor C F2 charges. In this stage, the power supply, the choke inductor L F , the clamping capacitor , and the first additional capacitor C F1 are composed of the resonant network of the second additional capacitor C F2 and the output gate Lg , Cg , Rg to provide energy. The capacitance of the second additional capacitor C F2 is very small, and is equivalent to a small capacitor in series with the large-capacity clamping capacitor , so that the resonant network at this time has a higher resonant frequency, v ds2 quickly rises, and the output voltage V g quickly falls. Until the time t2 V g falls to zero, and the next mode is entered.

[0078] Mode 3, t∈[t2, t3]: the first switch S 1 remains on, and the second switch S 2 remains off. The equivalent circuit structure of the active clamped resonant driving circuit of the embodiment is shown in Figure 6 . The large-capacity clamping capacitor Isolated from the current loop neither charge nor discharge, the second switch tube S 2 The terminal voltage is clamped at V in + v cc , the output drive voltage V g Is clamped at zero. The power supply through the first switch tube S 1 Choke inductance L F Charge, at this time the choke inductance L F The voltage is clamped at V in , the current i LF Linearly rises.

[0079] Mode 4, t∈[t3,t4]: the first switch tube S 1 Turn off, the second switch tube S 2 Turn on, the equivalent circuit structure diagram of the active clamped resonant drive circuit of the embodiment is shown in Figure 7 . The first additional capacitor C F1 Charges, the second additional capacitor C F2 Discharges, the output voltage V g Rises, v ds2 Falls. The resonant network composition in this stage is the same as that in mode 2, until the terminal voltage S 2 Of the second switch tube v ds2 Falls to 0 at t4 and is clamped at zero by the body diode of the second switch tube S 2 Enter the next mode.

[0080] Mode 5, t∈[t4,t5]: the first switch tube S 1 Remains off, the second switch tube S 2 Remains on, the equivalent circuit structure diagram of the active clamped resonant drive circuit of the embodiment is shown in Figure 8 . The clamping capacitor Current i cc Is greater than 0, the body diode of the second switch tube S 2 Conducts, and the second additional capacitor CF2 Stop charging and discharging, clamping capacitor Continue discharging. During this discharge process, the choke inductor... L F and clamping capacitor They jointly provide the resonant current, but due to the clamping capacitor The clamping effect, v cc It will only decrease slightly, output voltage V g Always clamped V in + v cc .

[0081] Mode 6, t∈[t5,t6]: First switching transistor S 1 Keep off, second switch transistor S 2 The body diode remains conducting. The equivalent circuit structure diagram of the active clamp resonant drive circuit in this embodiment is shown below. Figure 9 As shown. This mode i cc Reverse, second switching transistor S 2 The body diode turns on, then the MOSFET turns on, and the clamping capacitor... The transition from discharging to charging is also due to the clamping capacitor. The clamping effect, v cc The output voltage only increased slightly. V g Still clamped V in + v cc .

[0082] Reference Figure 10 to Figure 14 The experimental results include: Figure 10 In this embodiment, the active clamp resonant drive circuit operates with an output frequency of 13.56MHz and a duty cycle of 50% for the first switching transistor. S 1 Second switching transistor S 2 Drive voltage and output voltage Vg Waveform diagram; Figure 11 In this embodiment, the active clamp resonant drive circuit operates with an output frequency of 13.56MHz and a duty cycle of 35% for the first switching transistor. S 1 Second switching transistor S 2 Drive voltage and output voltage VgWaveform diagram of the drive voltage and the output voltage of the first switch tube Figure 12 is the first switch tube of the active-clamp resonant driving circuit of the embodiment, and the output frequency is 13.56 MHz and the duty cycle is 65% S 1 and the second switch tube S 2 Waveform diagram of the drive voltage and the output voltage of the first switch tube Vg Figure 13 is the first switch tube of the active-clamp resonant driving circuit of the embodiment, and the output frequency is 6.78 MHz and the duty cycle is 50% S 1 and the second switch tube S 2 Waveform diagram of the drive voltage and the output voltage of the first switch tube Vg Figure 14 is the first switch tube of the active-clamp resonant driving circuit of the embodiment, and the output frequency is 20.12 MHz and the duty cycle is 35% S 1 and the second switch tube S 2 Waveform diagram of the drive voltage and the output voltage of the first switch tube Vg

[0083] Based on the experimental results, the following conclusions can be drawn:

[0084] It can be seen from Figure 10 that the active-clamp resonant driving circuit has a fast switching speed, which can reach the level of nanoseconds, so that the active-clamp resonant driving circuit can work at a high frequency of MHz level. V g

[0085] It can be seen from Figure 11 and Figure 12 that the active-clamp resonant driving circuit can adjust the output duty cycle by adjusting the input drive signal duty cycle, and the control is simple, has a wide range of duty cycle modulation, and is easy to adjust.

[0086] It can be seen from Figure 13 and Figure 14 that the active-clamp resonant driving circuit works in a wide frequency range, and the output frequency can be directly changed by adjusting the working frequency of the first switch tube S 1 and the second switch tube S 2 , which is conducive to the realization of frequency modulation of the ultra-high frequency converter.

[0087] Comparing Figure 10 to Figure 14 with Figure 3 to Figure 9 ​​​​As can be known, the experimental results are consistent with the analysis results, and the active clamping resonant type ultra-high frequency square wave driving structure using clamping and resonance to realize fast switching can realize large-power high-speed square wave driving output with wide range adjustable duty cycle and frequency.

[0088] Based on the above analysis, the active clamping resonant type driving circuit has the advantages of high driving frequency, large driving power and adjustable duty cycle.

[0089] The embodiment also discloses an active clamping resonant type driving device including the active clamping resonant type driving circuit.

[0090] It should be noted that the active clamping resonant type driving device corresponds to the active clamping resonant type driving circuit, and therefore, the contents not specifically described in the active clamping resonant type driving device can be, but are not limited to, function definitions, working principles and technical effects, and can refer to the descriptions in the active clamping resonant type driving circuit, which will not be described herein.

[0091] In summary, the active clamping resonant type driving circuit and device have at least the following technical effects compared with the prior art.

[0092] Firstly, by introducing the clamping structure, the wide range duty cycle adjustment of the tens of megahertz frequency square wave driving output is realized by adjusting the two switch conduction ratios and the input voltage, and the same circuit parameters can support a certain wide frequency band operation, effectively improving the flexibility of the design of the ultra-high frequency converter.

[0093] Secondly, due to the existence of the clamping capacitor and the choke inductor L F , the coupling degree of the driving waveform and the line parasitic parameters is reduced, and the stability and anti-interference ability of the driving circuit are improved.

[0094] It should be understood that the above is only for illustration, and does not constitute any limitation on the technical solutions of the present application. In specific applications, those skilled in the art can set it according to the needs, and the present application does not limit it.

[0095] It should be noted that the above-described workflow is only illustrative and does not limit the scope of protection of the present application. In actual application, those skilled in the art can select part or all of them to achieve the purpose of the embodiment, which is not limited herein.

[0096] It should be noted that, in the present document, the terms "comprising", "including", or any other variant thereof are intended to cover a non-exclusive inclusion, such that processes, methods, articles, or systems that comprise a list of elements not only include those elements, but also other elements not expressly listed, or other elements inherent to such processes, methods, articles, or systems. Without more limitations, an element defined by the phrase "comprising a" does not exclude the presence of additional identical elements in the process, method, article, or system that includes the element.

[0097] Through the above description of the embodiments, those skilled in the art can clearly understand that the above-mentioned embodiment methods can be realized by means of software and the necessary general hardware platform, of course, they can also be realized by hardware, but in many cases the former is a better embodiment. Based on such understanding, the technical solutions of the present application can be embodied in the form of a software product, which is stored in a storage medium (such as a read-only memory / random access memory, a magnetic disk, an optical disk), and includes a number of instructions for making a terminal device (which can be a mobile phone, a computer, a server, an air conditioner, or a network device, etc.) execute the methods described in various embodiments of the present application.

[0098] The above is only the preferred embodiment of the present application, and does not limit the patent scope of the present application, and any equivalent structure or equivalent flow transformation made by using the content of the present application specification and drawings, or directly or indirectly applied to other related technical fields, are also included in the patent protection scope of the present application.

Claims

1. An active clamp resonant drive circuit, characterized by, include: The power module provides the DC power required for the drive. An energy storage clamping module is used for energy storage and voltage clamping. It includes a power connection terminal, a ground terminal, an intermediate connection point, and a clamping output terminal. The power connection terminal is connected to the positive terminal of the power module, and the ground terminal is connected to the negative terminal of the power module. The switch module is used to control the switching of the circuit's operating state. It includes a common connection terminal, a ground connection terminal, and a clamping connection terminal. The common connection terminal is connected to the intermediate connection point of the energy storage clamping module. The ground connection terminal is connected to the negative terminal of the power supply module. The clamping connection terminal is connected to the clamping output terminal of the energy storage clamping module. An additional capacitor module is used to cooperate in resonant driving, including a first resonant branch and a second resonant branch. The two ends of the first resonant branch are respectively connected to the common connection terminal and the ground connection terminal of the switch group module, and the two ends of the second resonant branch are respectively connected to the common connection terminal and the clamping connection terminal of the switch group module. An output drive module is used to output a drive signal to the load after being clamped and resonantly regulated by the energy storage clamping module, the switch group module and the additional capacitor module. The input terminal of the output drive module is connected to the common connection terminal of the switch group module, and the output terminal of the output drive module is connected to the load, which includes at least a power electronic switching device to be driven.

2. The active-clamp resonant drive circuit of claim 1, wherein, The energy storage clamping module includes an input capacitor, a choke inductor, and a clamping capacitor; the switch group module includes a first switch transistor and a second switch transistor; the auxiliary capacitor module includes a first auxiliary capacitor and a second auxiliary capacitor.

3. The active-clamp resonant drive circuit of claim 2, wherein, The connection relationship of the energy storage clamping module is as follows: The first end of the input capacitor, the first end of the choke inductor, and the first end of the clamping capacitor are connected together to form the power connection terminal of the energy storage clamping module. The second end of the input capacitor is the ground terminal of the energy storage clamping module. The second end of the choke inductor is the intermediate connection point of the energy storage clamping module. The second end of the clamping capacitor is the clamping output terminal of the energy storage clamping module.

4. The active-clamp resonant drive circuit of claim 3, wherein, The connection relationship of the switch group modules is as follows: The drain of the first switching transistor and the source of the second switching transistor are connected together to form the common connection terminal of the switching group module. The source of the first switching transistor is the ground connection terminal of the switching group module, and the drain of the second switching transistor is the clamping connection terminal of the switching group module.

5. The active-clamp resonant drive circuit of claim 4, wherein, The connection relationship of the additional capacitor module is as follows: The first additional capacitor forms the first resonant branch, and the two ends of the first additional capacitor are respectively connected to the common connection terminal and the ground connection terminal of the switch group module; The second additional capacitor forms the second resonant branch, and the two ends of the second additional capacitor are respectively connected to the common connection terminal and the clamping connection terminal of the switch group module.

6. The active-clamp resonant drive circuit of claim 5, wherein, The first switch tube and the second switch tube are alternately conducted, the duty ratio of the first switch tube is defined as , the duty ratio of the second switch tube is defined as , and .

7. The active-clamp resonant drive circuit of claim 6, wherein the active clamp circuit comprises a diode (D2) connected in series with the inductor (L2) and the capacitor (C2) and a switch (S2) connected in parallel with the diode (D2). The driving signal output by the output driving module is a quasi-square wave, the duty cycle of the quasi-square wave is , and the frequency of the driving signal is equal to the working frequency of the first switch tube and the second switch tube.

8. The active-clamp resonant drive circuit of claim 7, wherein, The drive voltage output by the output drive module The duty cycle of the first switch tube The output voltage of the power supply module The relationship is .

9. The active-clamp resonant drive circuit of claim 8, wherein, Both the first and second switching transistors are unidirectional switching transistors; the power electronic switching device to be driven includes at least a silicon carbide MOSFET.

10. An active clamp resonant drive arrangement, characterized by The active clamping resonant drive device includes the active clamping resonant drive circuit as described in any one of claims 1-9.

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