A method for sealing a quartz crystal oscillator base

Abstract

The application discloses a quartz crystal oscillator base sealing method and belongs to the technical field of components and elements. The technical key point is that the upper cover and the base with a KV ring are sealed by a rolling electrode. The resistance of the upper cover is R1, the surface resistance of the KV ring of the base with the KV ring is R2, the resistances of the upper cover and the base on two sides are R5 and R6 respectively, and the maximum output power of the rolling electrode is P max . P max , R1, R5, R6 and R2 need to satisfy the following conditions: P max ·[1+R2 / (R5+R6)] ‑1 ·[1+(R5+R2+R6) / R1] ‑1 is greater than or equal to [P 热阈值 ]. [P 热阈值 ] represents the heat power threshold of the resistances of the upper cover and the base on two sides during the sealing of the rolling electrode. The technical scheme can improve the air tightness of the quartz crystal oscillator.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of electronic components, and more particularly to a sealing method for a quartz crystal oscillator base. BACKGROUND

[0002] As described in https: / / m.ruidan.com / infomation / detail / 212609, the sealing method of SEAM: the nickel-plated Kovar upper cover and the base are pressed together by a pair of roller electrodes, and a pulse direct current with low voltage and high current is applied to the electrode to generate a molten core that overlaps to form a sealing weld.

[0003] The quality of the sealing weld directly affects the air tightness of the quartz crystal oscillator. Poor air tightness can significantly affect the performance of the quartz crystal oscillator, mainly in terms of frequency stability and reliability. Specifically, poor air tightness can cause: internal air pressure changes in the quartz crystal, wafer contamination, electrode oxidation, which affects the vibration characteristics and causes the output frequency to drop, the frequency stability to decrease, and even the oscillator to stop.

[0004] For bases with KV rings, existing production experience shows that the main factors affecting the sealing air tightness are: (1) the flatness of the KV ring surface and the bottom of the base is not good; (2) there are gaps between the KV ring and the ceramic cavity, and between the layers of the ceramic cavity. Defects in flatness and layer gap can significantly affect the air tightness of the quartz crystal oscillator product, and thus cause water vapor or impurities in the air to enter the cavity, thereby adversely affecting the performance of the product.

[0005] However, in actual production, the research and development team found that products with qualified base flatness and base layer gap still had air leakage problems. In view of this situation, the research and development team realized that there are other key factors affecting the sealing of the quartz crystal oscillator. SUMMARY

[0006] The purpose of the present application is to overcome the shortcomings of the prior art and provide a sealing method for a quartz crystal oscillator.

[0007] The technical solution of the present application is as follows:

[0008] A sealing method for a quartz crystal oscillator base, the upper cover and the base with a KV ring are sealed by a rolling electrode; the resistance of the upper cover is R1, the resistance of the KV ring surface of the base with a KV ring is R2, the resistances of the two sides of the upper cover and the base are R5 and R6 respectively, and the maximum output power of the rolling electrode is P max .

[0009] P max , R1, R5, R6, R2 need to meet:

[0010] P max · [1+R2 / (R5+R6)] -1 · [1+(R5+R2+R6) / R1] -1 greater than or equal to [P 热阈值 ];

[0011] wherein [P 热阈值 ] represents a heat generation power threshold value of the resistance of the upper cover and the base contacting on both sides when the rolling electrode sealing is performed.

[0012] A quartz crystal oscillator base sealing method, the upper cover and the base with KV ring are sealed by rolling electrode; the resistance of the upper cover is R1, the KV ring surface resistance of the base with KV ring is R2, the resistance of the upper cover and the base contacting on both sides is R5 and R6 respectively, the contact resistance of the rolling electrode on both sides and the upper cover is R3 and R4 respectively, and the maximum output power of the rolling electrode is P max .

[0013] P max , R1, R5, R6, R2, R3, R4 need to meet:

[0014] P max · (R5+R6)· [R1 / (R1+R5+R2+R6)] 2 / [R3+R4+R1·(R5+R2+R6) / (R1+R5+R2+R6)] greater than or equal to [P 热阈值 ];

[0015] wherein [P 热阈值 ] represents a heat generation power threshold value of the resistance of the upper cover and the base contacting on both sides when the rolling electrode sealing is performed.

[0016] A quartz crystal oscillator base sealing method, comprising the following steps:

[0017] S100, the upper cover of the quartz crystal oscillator is made of metal material, and the resistance R1 of the upper cover is obtained;

[0018] S200, the KV ring surface resistance R2 of the base with KV ring is obtained;

[0019] S300, the resistance of the upper cover is R1, the KV ring surface resistance of the base with KV ring is R2, the resistance of the upper cover and the base contacting on both sides is R5 and R6, and the maximum output power of the rolling electrode is P max .

[0020] P max , R1, R5, R6, R2 need to meet:

[0021] P max · [1+R2 / (R5+R6)] -1· [R5+R2+R6] / R1 -1 greater than or equal to [P 热阈值 ];

[0022] wherein, [P 热阈值 ] represents the heat power threshold of the resistance of the upper cover and the base contacting on both sides when the rolling electrode is sealed;

[0023] The upper cover and the base are pressed together by a pair of rolling electrodes, and low voltage and high current pulse direct current are matched with the rolling of the electrodes, so that the upper cover and the base are sealed together.

[0024] A sealing method of a quartz crystal base, comprising the following steps:

[0025] S100, the upper cover of the quartz crystal is made of metal material, and the resistance R1 of the upper cover is obtained;

[0026] S200, the KV ring surface resistance R2 of the base with a KV ring is obtained;

[0027] S300, the resistance of the upper cover is R1, the KV ring surface resistance of the base with a KV ring is R2, the resistance R5 and R6 of the upper cover and the base contacting on both sides, the contact resistance of the rolling electrodes on both sides and the upper cover is R3 and R4 respectively, and the maximum output power of the rolling electrode is P max ;

[0028] P max , R1, R5, R6, R2, R3, R4 need to meet:

[0029] P max · (R5+R6)· [R1 / (R1+R5+R2+R6)] 2 / [R3+R4+R1·(R5+R2+R6) / (R1+R5+R2+R6)] greater than or equal to [P 热阈值 ];

[0030] wherein, [P 热阈值 ] represents the heat power threshold of the resistance of the upper cover and the base contacting on both sides when the rolling electrode is sealed;

[0031] The upper cover and the base are pressed together by a pair of rolling electrodes, and low voltage and high current pulse direct current are matched with the rolling of the electrodes, so that the upper cover and the base are sealed together.

[0032] Further, [P 热阈值 ] is 2 w ~ 5 w.

[0033] Further, the KV ring surface resistance R2 of the base with a KV ring is measured by four-terminal measurement method.

[0034] Furthermore, any two diagonal points of the KV ring are selected as probe test points.

[0035] Furthermore, P max It is 250w.

[0036] The beneficial effects of this application are as follows:

[0037] First, the R&D team discovered that the surface resistance of the KV ring in the base with the KV ring is also one of the key factors affecting the sealing quality of the quartz crystal oscillator.

[0038] Specifically, the resistance of the top cover (the top cover of the SEAM structure is made of metal) is R1, the surface resistance of the KV ring of the base with the KV ring is R2, the resistances of the top cover in contact with the two sides of the base are R5 and R6, the contact resistances of the rolling electrodes on both sides with the top cover are R3 and R4 respectively, and the maximum output power of the rolling electrodes is P. max ;

[0039] P max R1, R5, R6, R2, R3, and R4 need to satisfy:

[0040] P max ·(R5+R6)·[R1 / (R1+R5+R2+R6)] 2 / [R3+R4+R1·(R5+R2+R6) / (R1+R5+R2+R6)] is greater than or equal to [P 热阈值 ];

[0041] Among them, [P 热阈值 [] indicates the threshold of heat generation power during the rolling electrode sealing process, which is caused by the resistance of the contact between the top cover and the base on both sides.

[0042] Second, in actual production, when sealing and soldering quartz crystal oscillators, the sealing and soldering equipment (i.e., P) max The resistances are known, typically 250W; excessive resistance can cause uneven soldering, poor appearance, and solder sputtering onto the chip, resulting in product defects. The top cover dimensions and material are fixed (i.e., R1, R3, and R4 are known). Ignoring individual product differences, with fixed top cover and base dimensions, fixed electrodes, and a fixed applied pressure, the resistances R5 and R6 at the contact points between the top cover and base are also close to constant values ​​(empirical values ​​can be obtained, e.g., for a 2016 base, R5 + R6 is approximately 45mΩ). Therefore, in actual production, only the KV ring surface resistance R2 of the base with the KV ring needs to be tested. That is, before production, the KV ring surface resistance R2 of the bases with KV rings in the same batch is tested and meets the requirements (e.g., ...). Figure 3 (These are the conformity values ​​for each model provided by the R&D team), and then the sealing is performed. Attached Figure Description

[0043] The application will be described in further detail below with reference to the embodiments in the accompanying drawings, but shall not be construed as any limitation thereto.

[0044] Figure 1 is a model diagram of the sealing power supply of the SEAM structure.

[0045] Figure 2 is a schematic diagram of the base KV torus test point.

[0046] Figure 3 is the maximum value of R2 determined by the R&D team for different product specifications.

[0047] The reference signs are explained as follows:

[0048] 100: KV torus;

[0049] R1: upper cover resistance;

[0050] R2: base KV torus resistance;

[0051] R3, R4: contact resistance of the two side rolling electrodes and the upper cover;

[0052] R5, R6: resistance of the upper cover and the two sides of the base;

[0053] VCC: power supply;

[0054] I1: current flowing through the upper cover;

[0055] I2: current flowing through the base;

[0056] I 总 : the sum of the current from the rolling electrode through the upper cover and the base. DETAILED DESCRIPTION

[0057] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. The present disclosure can be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. It is to be understood that these embodiments are presented in order to make the present disclosure more thorough and complete, and fully convey the scope of the present disclosure to those skilled in the art. In the drawings, the shape and size of elements can be exaggerated for the purpose of clarity, and the same reference signs will be used throughout to designate the same or similar elements.

[0058] <One, theoretical analysis>

[0059] The R&D team found in the practice that the torus resistance of the KV ring also seriously affects the sealing effect.

[0060] Take the base of 2016 as an example, it is found that under the condition of using the same cover, the base provided by different suppliers (such as A, B) is good in air tightness after sealing, while the base provided by B supplier has problems.

[0061] The current related to analysis and sealing is shown in the model of sealing as follows: Figure 1 R1: cover resistance; R2: base KV ring surface resistance; R3, R4: contact resistance of two side rolling electrodes and cover (including line resistance); R5, R6: resistance of cover and two side contact of base; VCC: power supply; I1: current flowing through the cover; I2: current flowing through the base; I 总 : sum of current from rolling electrode through cover and base.

[0062] From Figure 1 it can be known that: I 总 =U / [R3+R4+R1(R5+R2+R6) / (R1+ R5+R2+R6)]。When R2 increases, I 总 will decrease, and I2 will also decrease. The contact surface of the cover and the base KV generates heat (Q=I2 2 (R5+R6)t), which will also decrease. At this time, the amount of metal melting is small, and this situation is prone to air leakage.

[0063] It should be noted that Q and t are related. However, in order to maintain the stability of the process, the parameter time t is set to be uniform. It is generally around 1 millisecond.

[0064] From Figure 1 it can be known that:

[0065] The current I1 passing through R1=I 总 ·(R5+R2+R6) / (R1+R5+R2+R6)];

[0066] The current I2 passing through R2, R5 and R6=I 总 ·R1 / (R1+R5+R2+R6)];

[0067] The output power of the rolling electrode is set to P, and the relationship between the heating power P5, P6 of R5, R6 and P is derived as follows:

[0068] P5= I2 2 ·R5;

[0069] P6= I2 2 ·R6;

[0070] P= I 总 2 (R3+R4)+ I1 2 ·R1+ I2 2 (R5+R2+R6);

[0071] P5= P· R5· [R1 / (R1+R5+R2+R6)] 2 / [R3+R4+R1·(R5+R2+R6) / (R1+R5+R2+R6)];

[0072] P6= P· R6· [R1 / (R1+R5+R2+R6)] 2 / [R3+R4+R1·(R5+R2+R6) / (R1+R5+R2+R6)].

[0073] To simplify the analysis, disregard R3 and R4, i.e., set R3 and R4 to both be 0:

[0074] P5= P·R5·R1·(R1+R5+R2+R6) -1 (R5+R2+R6) -1 ;

[0075] P6= P·R6·R1·(R1+R5+R2+R6) -1 (R5+R2+R6) -1 .

[0076] Therefore, the total heat power P5+P6 generated at the contact surface between the top cover and the base KV is:

[0077] P5 + P6 = P·[1 + R2 / (R5 + R6)] -1 ·[1+(R5+R2+R6) / R1] -1 .

[0078] It can be more clearly seen from the above formula that increasing R2 will lead to a decrease in P5+P6.

[0079] <Two, a quartz crystal oscillator base packaging method>

[0080] A method for packaging a quartz crystal oscillator base includes the following steps:

[0081] S100, the top cover of the quartz crystal oscillator is made of metal (i.e., SEAM package), and the top cover resistor R1 is obtained;

[0082] S200, obtain the KV ring surface resistance R2 of the base with KV ring;

[0083] S300, the resistance of the top cover is R1, the surface resistance of the KV ring on the base with the KV ring is R2, the resistances of the top cover and the two sides of the base in contact are R5 and R6, and the maximum output power of the rolling electrode is P. max ;

[0084] P maxR1, R5, R6, R2 satisfy the following relationship:

[0085] P max · [1 + R2 / (R5 + R6)] -1 · [1 + (R5 + R2 + R6) / R1] -1 greater than or equal to [P 热阈值 ];

[0086] Wherein, [P 热阈值 ] represents the heat power threshold of the resistance of the upper cover and the base contacting on both sides when the rolling electrode is sealed;

[0087] The upper cover and the base are pressed together by a pair of rolling electrodes, and low voltage and high current pulse direct current are matched with the rolling of the electrodes, so that the upper cover and the base are sealed together.

[0088] Or,

[0089] A quartz crystal oscillator base packaging method, comprising the following steps:

[0090] S100, the upper cover of the quartz crystal oscillator is made of metal material, and the resistance R1 of the upper cover is obtained;

[0091] S200, the KV ring surface resistance R2 of the base with KV ring is obtained;

[0092] S300, the resistance of the upper cover is R1, the KV ring surface resistance of the base with KV ring is R2, the resistance R5, R6 of the upper cover and the base contacting on both sides, the contact resistance of the rolling electrode on both sides and the upper cover is R3, R4 respectively, and the maximum output power of the rolling electrode is P max ;

[0093] P max , R1, R5, R6, R2, R3, R4 need to satisfy:

[0094] P max · (R5 + R6) · [R1 / (R1 + R5 + R2 + R6)] 2 / [R3 + R4 + R1 · (R5 + R2 + R6) / (R1 + R5 + R2 + R6)] greater than or equal to [P 热阈值 ];

[0095] Wherein, [P 热阈值 ] represents the heat power threshold of the resistance of the upper cover and the base contacting on both sides when the rolling electrode is sealed;

[0096] The upper cover and the base are pressed together by a pair of rolling electrodes, and low voltage and high current pulse direct current are matched with the rolling of the electrodes, so that the upper cover and the base are sealed together.

[0097] It should be noted that, as shown in Figure 2 The KV ring surface micro-resistance measurement method of the base with KV ring adopts four-terminal measurement method. The KV ring surface resistance is accurately measured by constant current and voltage detection, and the lead and contact errors are eliminated. Select any two diagonal points E and F of the base KV ring as the probe test points.

[0098] The R&D team according to the known conditions of the sealing equipment, the upper cover material, etc. of the company. Figure 3 The maximum reference value of the KV ring surface resistance R2 of the base with KV ring is shown.

[0099] The above only describes the preferred embodiments of the present application, and does not limit the implementation and protection scope of the present application. For those skilled in the art, it should be realized that any equivalent replacement and obvious changes made according to the content of the present application should be included in the protection scope of the present application.

Claims

1. A method for sealing a quartz crystal oscillator base, comprising sealing the upper cover and the base with a KV ring using rolling electrodes; characterized in that, The resistance of the top cover is R1, the surface resistance of the KV ring on the base with the KV ring is R2, the resistances of the top cover and the two sides of the base in contact are R5 and R6 respectively, and the maximum output power of the rolling electrode is P. max ; P max R1, R5, R6, and R2 need to satisfy: P max ·[1+R2 / (R5+R6)] -1 ·[1+(R5+R2+R6) / R1] -1 Greater than or equal to [P] 热阈值 ]; Among them, [P] 热阈值 [] indicates the threshold of heat generation power during the rolling electrode sealing process, which is caused by the resistance of the contact between the top cover and the base on both sides.

2. A method for sealing a quartz crystal oscillator base, comprising sealing the upper cover and the base with a KV ring using rolling electrodes; characterized in that, The resistance of the top cover is R1, the surface resistance of the KV ring on the base with the KV ring is R2, the resistances of the top cover in contact with the base on both sides are R5 and R6, the contact resistances of the rolling electrodes on both sides in contact with the top cover are R3 and R4, and the maximum output power of the rolling electrodes is P. max ; P max R1, R5, R6, R2, R3, and R4 need to satisfy: P max ·(R5+R6)·[R1 / (R1+R5+R2+R6)] 2 / [R3+R4+R1·(R5+R2+R6) / (R1+R5+R2+R6)] is greater than or equal to [P 热阈值 ]; Among them, [P] 热阈值 [] indicates the threshold of heat generation power during the rolling electrode sealing process, which is caused by the resistance of the contact between the top cover and the base on both sides.

3. A method for sealing a quartz crystal oscillator base as described in claim 1 or 2, characterized in that, [P 热阈值 The value ranges from 2w to 5w.

4. A method for sealing a quartz crystal oscillator base, characterized in that, Includes the following steps: S100, the top cover of the quartz crystal oscillator is made of metal, obtain the top cover resistance R1; S200, obtain the KV ring surface resistance R2 of the base with KV ring; S300, the resistance of the top cover is R1, the surface resistance of the KV ring on the base with the KV ring is R2, the resistances of the top cover and the two sides of the base in contact are R5 and R6, and the maximum output power of the rolling electrode is P. max ; P max R1, R5, R6, and R2 need to satisfy: P max ·[1+R2 / (R5+R6)] -1 ·[1+(R5+R2+R6) / R1] -1 Greater than or equal to [P] 热阈值 ]; Among them, [P] 热阈值 [] indicates the threshold of heat generation power during rolling electrode sealing when the resistance of the upper cover in contact with both sides of the base is used. The top cover and the base are pressed together using a pair of roller electrodes. A low-voltage and high-current pulsed DC current is applied to the rolling of the electrodes, thereby sealing the top cover and the base together.

5. A method for sealing a quartz crystal oscillator base, characterized in that, Includes the following steps: S100, the top cover of the quartz crystal oscillator is made of metal, obtain the top cover resistance R1; S200, obtain the KV ring surface resistance R2 of the base with KV ring; S300, the resistance of the top cover is R1, the surface resistance of the KV ring of the base with the KV ring is R2, the resistances of the top cover in contact with the two sides of the base are R5 and R6, the contact resistances of the rolling electrodes on both sides with the top cover are R3 and R4 respectively, and the maximum output power of the rolling electrodes is P. max ; P max R1, R5, R6, R2, R3, and R4 need to satisfy: P max ·(R5+R6)·[R1 / (R1+R5+R2+R6)] 2 / [R3+R4+R1·(R5+R2+R6) / (R1+R5+R2+R6)] is greater than or equal to [P 热阈值 ]; Among them, [P] 热阈值 [] indicates the threshold of heat generation power during rolling electrode sealing when the resistance of the upper cover in contact with both sides of the base is used. The top cover and the base are pressed together using a pair of roller electrodes. A low-voltage and high-current pulsed DC current is applied to the rolling of the electrodes, thereby sealing the top cover and the base together.

6. A method for sealing a quartz crystal oscillator base as described in claim 4 or 5, characterized in that, The surface resistance R2 of the KV ring on the base with the KV ring is measured using the four-terminal measurement method.

7. A method for sealing a quartz crystal oscillator base as described in claim 4 or 5, characterized in that, Select any two diagonal points of the KV ring as probe test points.

8. A method for sealing a quartz crystal oscillator base as described in claim 4 or 5, characterized in that, [P 热阈值 The value ranges from 2w to 5w.

9. A method for sealing a quartz crystal oscillator base as described in claim 4 or 5, characterized in that, P max It is 250w.

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