Consumable updating method and device, medium and electronic equipment
By dynamically updating the performance level of consumables, the problems of individual differences and performance degradation of consumables in RF chip/wafer testing are solved, achieving efficient consumable management, reducing loss rate and improving testing accuracy.
Patent Information
- Application Number
- CN202511048971.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-07-29
- Publication Date
- 2025-11-11
AI Technical Summary
In existing RF chip/wafer testing, individual differences and performance degradation of consumables lead to a decrease in testing accuracy. High-value consumables have a high loss rate, and the update methods rely on manual experience, lacking quantification and dynamic monitoring.
By acquiring test task requirements, matching consumable performance levels, and dynamically updating consumable performance levels during RF testing, including calibration error, time drift rate, and impedance region offset levels, the ARIMA model is used to predict consumable performance changes, triggering maintenance prompts and downgrades in a timely manner.
It reduces the loss rate of high-value consumables, improves testing accuracy and consumable usage efficiency, extends consumable lifespan, and reduces reliance on manual experience.
Smart Images
Figure CN120929467A_ABST
Abstract
Description
Technical Field
[0001] This disclosure belongs to the field of microelectronic test and measurement technology, specifically relating to consumable replacement methods, devices, media, and electronic equipment. Background Technology
[0002] In RF chip / wafer testing, individual differences and performance degradation of consumables such as probes and calibration chips can significantly affect test accuracy. Existing update methods only record basic information about the consumables (model, number of uses, etc.), which means that high-precision testing relies on manual experience for selection, resulting in a high wear rate for high-value consumables. Summary of the Invention
[0003] The purpose of this disclosure is to provide consumable replacement methods, apparatus, media, and electronic equipment to address the problem of high wear rates of high-value consumables in the prior art.
[0004] To achieve the above and other related objectives, in a first aspect, this disclosure provides a consumable update method. The update method includes: obtaining test task requirements; matching test consumables with corresponding performance levels based on the test task requirements, the consumable performance levels including calibration error level, time drift rate level, and impedance region offset level; performing on-chip radio frequency (RF) testing based on the test consumables; and dynamically updating the consumable performance level of the test consumables during the RF on-chip testing process.
[0005] By matching test consumables with the requirements of the test task and dynamically updating the performance level of consumables during the test, the loss rate of high-value consumables can be reduced.
[0006] In one embodiment of this disclosure, the calibration error is expressed as:
[0007]
[0008] Where ΔE represents the calibration error, and N represents the number of frequency points. This represents the input reflection coefficient measured at frequency i. This represents the reference input reflection coefficient at frequency i. This represents the output reflection coefficient measured at frequency i. f represents the reference output reflection coefficient at frequency i. i This indicates the frequency point i.
[0009] In one embodiment of this disclosure, the time drift rate is expressed as:
[0010]
[0011] Where Drift Rate represents the time drift rate, S 21(t) represents the forward propagation coefficient at time t, S 21 (0) represents the initial forward transmission coefficient, T represents the monitoring period, and f max This indicates the highest testing frequency.
[0012] In one embodiment of this disclosure, the impedance region offset is expressed as:
[0013]
[0014] Where ΔZ represents the impedance region offset, and M represents the number of load traction test points. This represents the current impedance region of the j-th load traction test point. This represents the initial impedance region of the j-th load traction test point. This represents the real part of the current impedance region at the j-th load traction test point. Let represent the real part of the initial impedance region at the j-th load traction test point. This represents the imaginary part of the current impedance region at the j-th load traction test point. This represents the imaginary part of the initial impedance region at the j-th load traction test point.
[0015] In one embodiment of this disclosure, the method further includes: during the on-chip radio frequency testing, acquiring the forward transmission coefficient at preset time intervals; performing prediction processing on the forward transmission coefficient based on the ARIMA (Autoregressive Moving Average) model to obtain the forward transmission coefficient for the next k steps; and triggering a maintenance prompt when the forward transmission coefficient for the next k steps exceeds a threshold.
[0016] In one embodiment of this disclosure, the forward transmission coefficient for the next k steps is expressed as:
[0017]
[0018] Among them, S 21 (t n+k ) represents the forward transmission coefficient for the next k steps, α represents the first fitting coefficient, and S 21 (t n ) represents the positive transport coefficient of the nth record, β represents the second fitting coefficient, p represents the autoregression order, and S 21 (t n-I ) represents the forward transmission coefficient of the ni-th record, ∈ represents the random error term, and φ i This represents the weighting coefficient of the historical data at step i.
[0019] In one embodiment of this disclosure, the method for dynamically updating the performance level of the test consumable during on-chip radio frequency (RF) testing includes: during the on-chip RF testing, when the cumulative power degradation of the test consumable exceeds a preset value, the test consumable is forced to be downgraded.
[0020] Secondly, embodiments of this disclosure provide a consumable replacement device. The replacement device includes a requirement acquisition module for acquiring test task requirements; a consumable matching module for matching test consumables with corresponding performance levels based on the test task requirements, the consumable performance levels including calibration error level, time drift rate level, and impedance region offset level; an on-chip testing module for performing RF on-chip testing based on the test consumables; and a level update module for dynamically updating the consumable performance level of the test consumables during the RF on-chip testing process.
[0021] Thirdly, embodiments of this disclosure also provide a computer-readable storage medium having a computer program stored thereon. When executed by a processor, the computer program implements the update method described in any of the first aspects.
[0022] Fourthly, embodiments of this disclosure also provide an electronic device. The electronic device includes: a memory storing a computer program; and a processor communicatively connected to the memory, which, when the computer program is invoked, executes the update method described in any of the first aspects.
[0023] By matching test consumables with the requirements of the test task and dynamically updating the performance level of consumables during the test, the loss rate of high-value consumables can be reduced. Attached Figure Description
[0024] Figure 1 The diagram shown is a structural schematic of a consumables update system according to an embodiment of this disclosure.
[0025] Figure 2 The flowchart shown is a method for updating according to an embodiment of this disclosure.
[0026] Figure 3 The diagram shows the time drift characteristics of high-frequency calibration (40G) according to an embodiment of this disclosure.
[0027] Figure 4 The diagram shows a visualization of the probe impedance region offset according to an embodiment of this disclosure.
[0028] Figure 5 This is a visual comparison diagram of the impedance region overlap in the embodiments of this disclosure.
[0029] Figure 6 The flowchart shown is a method for updating according to an embodiment of this disclosure.
[0030] Figure 7 The diagram shown is a flowchart illustrating the dynamic grading of consumables according to an embodiment of this disclosure.
[0031] Figure 8 The diagram shown is a structural schematic of a consumables renewal device according to an embodiment of this disclosure. Detailed Implementation
[0032] The following specific examples illustrate the implementation of this disclosure. Those skilled in the art can easily understand other advantages and effects of this disclosure from the content disclosed in this specification. This disclosure can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of this disclosure. It should be noted that, unless otherwise specified, the following embodiments and features in the embodiments can be combined with each other.
[0033] It should be noted that the illustrations provided in the following embodiments are only schematic representations of the basic concept of this disclosure. Therefore, the illustrations only show the components related to this disclosure and are not drawn according to the number, shape and size of the components in actual implementation. In actual implementation, the form, quantity and proportion of each component can be arbitrarily changed, and the layout of the components may also be more complex.
[0034] The technical solutions of the present disclosure will be described in detail below with reference to the accompanying drawings.
[0035] In RF chip / wafer testing, existing consumable replacement methods have the following drawbacks:
[0036] a) The calibration error and drift characteristics of consumables cannot be quantified.
[0037] b) Lack of dynamic monitoring of power parameter degradation, such as P1dB (1dB compression point power), OIP3 (third-order intermodulation intercept point power), and changes in large signal impedance.
[0038] c) No hierarchical matching mechanism based on performance parameters has been established, and high-precision testing relies on manual experience for selection.
[0039] d) During high-frequency testing (>67GHz), the difference in S-parameter consistency between different batches of probes of the same model can lead to a calibration deviation of more than 3%.
[0040] e) After long-term use, the probe parasitic capacitance increases by 30%-50%, which causes the drift rate of standard calibration algorithms such as TRL (through, reflection and transmission line) and LRRM (transmission line, two reflection standards and matched load) to increase by 2-3 times.
[0041] f) Probe impedance mismatch and performance degradation were not tracked during power testing, resulting in errors in RF power parameter measurement.
[0042] The following will elaborate on the principles and implementation methods of the consumables renewal method, apparatus, medium and electronic equipment disclosed herein, so that those skilled in the art can understand the consumables renewal method, apparatus, medium and electronic equipment disclosed herein without creative effort.
[0043] Figure 1 This is a schematic diagram illustrating the structure of a consumable update system according to an embodiment of the present disclosure. The update system includes a calibration module, a grading engine, and a database. The calibration module connects a VNA (Vector Network Analyzer) to a load-pulling device and performs error, time drift, and power degradation quantization. The database stores the S-parameter files, impedance region maps, and usage records of the consumables. The grading engine is used for matching and updating the performance levels of the consumables. The S-parameters typically refer to the scattering parameters of consumable materials (such as cables, connectors, adapters, attenuators, etc.) related to the RF test system. These parameters describe the reflection and transmission characteristics of the consumables during high-frequency signal transmission and directly affect the accuracy of the test. Figure 2 This is a flowchart illustrating a consumables update method according to an embodiment of the present disclosure. Figure 2 As shown, this embodiment provides a consumable replacement method, which includes:
[0044] Step S11: Obtain test task requirements.
[0045] Optionally, the test task requirements may include any one of high-precision test task requirements, medium-precision test task requirements, and low-precision test task requirements. High-precision test tasks may be, for example, modeling tests (greater than 67 GHz), medium-precision test tasks may be, for example, RF mass production screening tests and routine R&D debugging, and low-precision test tasks may be, for example, engineering verification and disabling / scrapping.
[0046] Step S12: Match test consumables with corresponding performance levels based on the test task requirements. The performance levels of the consumables include calibration error level, time drift rate level, and impedance region offset level.
[0047] Optionally, the relevant data of the test consumables can be stored in a consumables feature database. The storage structure of the consumables can include basic attributes, performance parameters, and usage records. The basic attributes can include: name, model, serial number, and storage location, etc. The performance parameters can include: initial calibration error, drift rate, and power decay curve, etc. The usage records can include: number of needle insertions, test power spectrum, and overtravel correlation value, etc. The consumables feature database supports the associated storage of S-parameter files (.snp) and calibration data.
[0048] Optionally, the calibration data may refer to 12 error parameters recorded by performing SOLT (Short-Circuit-Open-Load-Through Calibration) calibration.
[0049] Optionally, the consumables may be probes or calibration chips used in RF chip / wafer testing.
[0050] Optionally, the performance level of the consumables can be E (Excellent), S (Stable), N (Normal), A (Acceptable), or D (Damaged). The performance level of the consumables required for the high-precision testing task can be E, the performance level of the consumables required for the medium-precision testing task can be S or N, and the performance level of the consumables required for the low-precision testing task can be A or D.
[0051] Optionally, the calibration error level can be E, S, N, A, or D. When the calibration error level is E, the calibration error is ≤1% (full frequency band). When the calibration error level is S, 1% < calibration error ≤3% (and ΔE ≤5% at high frequencies > 67GHz). When the calibration error level is N, the calibration error is ≤5%. When the calibration error level is A, the calibration error is ≤10%. When the calibration error level is D, the calibration error is >10% or ΔE >15% at key frequencies (e.g., 28GHz / 60GHz). The calibration error refers to the calibration error of the consumable.
[0052] Optionally, the calibration error can be expressed as:
[0053]
[0054] Where ΔE represents the calibration error, and N represents the number of frequency points. This represents the input reflection coefficient measured at frequency point i. This represents the reference input reflection coefficient at frequency point i. This represents the output reflection coefficient measured at frequency point i. f represents the reference output reflection coefficient at frequency point i. i This represents the frequency point i. Where, regarding... and All of these represent the S-parameters of the consumables.
[0055] Alternatively, the weighted calibration error can be expressed as:
[0056]
[0057] Where, ΔE weighted w(f) represents the weighted calibration error. i ) represents the weight at frequency point i.
[0058] in, ∑f i This represents the weighted sum at frequency point i, with higher error weights at higher frequencies, for example, at frequency f. i The weight is doubled when the frequency is >67GHz.
[0059] Optionally, the drift rate level can be E, S, N, A, or D. When the drift rate level is E, the drift rate is <0.01 dB / h (decibels per hour); when the drift rate level is S, the drift rate is <0.03 dB / h; when the drift rate level is N, the drift rate is <0.05 dB / h; when the drift rate level is A, the drift rate is <0.1 dB / h; and when the drift rate level is D, the drift rate is ≥0.1 dB / h. The drift rate refers to the drift rate of the consumable.
[0060] Optionally, the time drift rate is expressed as:
[0061]
[0062] Where Drift Rate represents the time drift rate, S 21 (t) represents the forward propagation coefficient at time t, S 21 (0) represents the initial forward transmission coefficient, T represents the monitoring period, i.e., the monitoring period of the drift rate, f max Indicates the highest testing frequency. S 21 (t) and S 21 (0) represents the S-parameter of the consumable.
[0063] Optionally, the grading criteria for the time drift rate can be expressed as:
[0064] Level E: Drift Rate<0.01dB / h@67GHz
[0065] Class S: 0.01dB / h ≤ Drift Rate < 0.03dB / h
[0066] Grade D: Drift Rate ≥ 0.1 dB / h.
[0067] Figure 3 The diagram shows the time drift characteristics of high-frequency calibration (40G) according to an embodiment of this disclosure.
[0068] Optionally, the impedance region offset level can be E, S, N, A, or D. When the impedance region offset level is E, the impedance offset is ≤2Ω; when the impedance region offset level is S, the impedance offset is ≤3Ω; when the impedance region offset level is N, the impedance offset is ≤5Ω; when the impedance region offset level is A, the impedance offset is ≤8Ω; and when the impedance region offset level is D, the impedance offset is >8Ω.
[0069] Optionally, the impedance region offset is expressed as:
[0070]
[0071] Where ΔZ represents the impedance region offset, and M represents the number of load traction test points. This represents the current impedance region of the j-th load traction test point. This represents the initial impedance region of the j-th load traction test point. This represents the real part of the current impedance region at the j-th load traction test point. Let represent the real part of the initial impedance region at the j-th load traction test point. This represents the imaginary part of the current impedance region at the j-th load traction test point. This represents the imaginary part of the initial impedance region at the j-th load traction test point. The number of load traction test points can be assumed to be 64. The impedance region can refer to the impedance region of the consumable, such as the impedance region of the probe.
[0072] Optionally, the impedance region offset can be measured by calibrating the initial impedance region (Z0) of the probe on a Smith chart, for example, 50Ω ± 2Ω, and then measuring the current impedance region Z using a load-pulling system. n . Figure 4 The diagram shows a visualization of the probe impedance region offset according to an embodiment of this disclosure. Figure 5 This is a visual comparison diagram of the impedance region overlap in the embodiments of this disclosure.
[0073] The threshold for impedance region offset can be expressed as: Allowable range: ΔZ≤3Ω (Class E); Restricted use: ΔZ>5Ω (marked as Class A / D).
[0074] Optionally, the consumable update method further includes: dynamically adjusting the calibration parameters of the test equipment based on the impedance region offset to obtain the adjusted calibration parameters. The adjusted calibration parameters can be expressed as:
[0075] S compensated =S meas ·e -jΔθ ,Δθ=arg(Zn / Z0)
[0076] Among them, S compensated S represents the adjusted calibration parameters. meas This refers to the calibration parameters of the test equipment, which can be S-parameters and Z-parameters measured from consumables. n Z0 represents the current impedance region, and Z0 represents the initial impedance region. In this embodiment, the calibration parameters of the test equipment can refer to parameters that can be used to calibrate the test equipment.
[0077] Optionally, the effectiveness of the adjusted calibration parameters, i.e., impedance compensation, can be verified through a power parameter degradation test. Power parameter degradation test (standard device: GaN HEMT, such as Qorvo QPD1010)
[0078] PAE (Power Added Efficiency) Deviation:
[0079]
[0080] Among them, PAE current The Power Added Efficiency (PAE) represents the current power-added efficiency. initial ΔPAE represents the initial power-added efficiency, and ΔPAE represents the power-added efficiency deviation.
[0081] When the consumable performance level is E: ΔPAE ≤ 2% (@28GHz, Pout = 23dBm). @28GHz indicates a frequency of 28GHz (gigahertz).
[0082] At level D: ΔPAE > 10%
[0083] Optionally, power degradation assessment: calibrate the probe impedance region offset ΔZ using the load traction system, and restrict its high-power testing privileges when ΔZ > 1Ω.
[0084] Step S13: During the on-chip RF testing process, dynamically update the consumable performance level of the test consumable.
[0085] Optionally, during on-chip radio frequency (RF) testing, the method for dynamically updating the consumable performance level of the test consumable includes: acquiring the calibration error, time drift rate, and impedance offset of the test consumable during the on-chip RF testing; and dynamically updating the consumable performance level of the test consumable based on the calibration error, the time drift rate, and the impedance offset.
[0086] Optionally, when ΔE ≤ 1%, Drift Rate < 0.01 dB / h, and ΔZ ≤ 2 Ω, the performance level of the test consumable is Grade E; when ΔE ≤ 3%, Drift Rate < 0.03 dB / h, and ΔZ ≤ 3 Ω, the performance level of the test consumable is Grade S; when ΔE ≤ 5%, Drift Rate < 0.05 dB / h, and ΔZ ≤ 5 Ω, the performance level of the test consumable is Grade N; when ΔE ≤ 10%, Drift Rate < 0.1 dB / h, and ΔZ ≤ 8 Ω, the performance level of the test consumable is Grade A; and when ΔE > 10%, Drift Rate ≥ 0.1 dB / h, or ΔZ > 8 Ω, the performance level of the test consumable is Grade D.
[0087] Optionally, the method for dynamically updating the performance level of the test consumables during on-chip radio frequency (RF) testing includes: during on-chip RF testing, when the cumulative power degradation of the test consumables exceeds a preset value, forcing the test consumables to be downgraded. The preset value can be flexibly set according to actual conditions, and this embodiment does not explicitly limit it. For example, the preset value can be 1000 dBm·h (decibels milliwatts per hour).
[0088] Optionally, during on-chip radio frequency testing, the method for dynamically updating the consumable performance level of the test consumable further includes: if the weighted calibration error of the high-frequency band (greater than 67 GHz) accounts for more than 50% of the total error, then the consumable performance level of the test consumable is forcibly reduced to below Grade S.
[0089] Optionally, during on-chip RF testing, the method for dynamically updating the performance level of the test consumable further includes: acquiring the time drift rate of the three consecutive measurements; when the time drift rate of the three consecutive measurements exceeds a threshold, downgrading the performance level of the test consumable and triggering an alarm. This threshold can be flexibly set according to actual conditions, and this embodiment does not explicitly limit it. Furthermore, a standard Open / Short structure can be used with a probe in fixed contact, and a VNA can continuously sample (at 5-minute intervals).
[0090] In one embodiment of this disclosure, the data quantification criteria used include mechanical performance degradation and cumulative power impairment.
[0091] (1) Degradation of mechanical properties
[0092] Number of probe insertions: Record the total number of times the probe contacts the wafer.
[0093] Lifespan threshold: Class E probe, maximum insertion count ≤ 50,000 times (high-frequency probe)
[0094] Anomaly flag: When a single overtravel exceeds 100μm, the cumulative lifespan decreases by 10%.
[0095] (2) Cumulative power loss can be expressed as:
[0096]
[0097] Where Damage Index represents cumulative power damage, K represents the number of tests conducted on the test consumables, and P k t represents the power of the k-th test of the test consumables. k Indicates duration.
[0098] Optionally, the performance level of the test consumables can be dynamically classified as shown in Table 1 below:
[0099]
[0100] Table 1
[0101] As described above, the update method includes: obtaining test task requirements; matching test consumables with corresponding performance levels based on the test task requirements, wherein the consumable performance levels include calibration error level, time drift rate level, and impedance region offset level; and dynamically updating the consumable performance level of the test consumables during RF on-chip testing.
[0102] By matching test consumables with the requirements of the test task and dynamically updating the performance level of consumables during the test, the loss rate of high-value consumables can be reduced.
[0103] Figure 6 This is a flowchart illustrating an update method according to an embodiment of this disclosure. For example... Figure 6 As shown, this embodiment provides a consumables replacement method, including:
[0104] Step S21: During the on-chip RF test, the forward transmission coefficient is obtained at preset time intervals.
[0105] Optionally, the preset time interval (Δt) can be flexibly set according to the actual situation. This embodiment does not explicitly limit this. For example, the preset time interval can be 5 minutes.
[0106] Optionally, the forward transmission coefficients (S21) can exist in the form of a sequence, and can be represented as ({S 21 (t0),S 21 (t1),…,S 21 (t n )}).
[0107] Step S22: Based on the ARIMA model, predict the forward transmission coefficients to obtain the forward transmission coefficients for the next k steps.
[0108] Optionally, the forward transmission coefficients for the next k steps are expressed as:
[0109]
[0110] Among them, S 21 (t n+k ) represents the forward transmission coefficient for the next k steps, which can be further considered as the forward transmission coefficient for the next k steps based on the forward transmission coefficient recorded in the nth time. α represents the first fitting coefficient, and S 21 (t n ) represents the positive transport coefficient of the nth record, β represents the second fitting coefficient, p represents the autoregression order, and S 21 (t n-i ) represents the forward transmission coefficient of the ni-th record, ∈ represents the random error term, and φ i The weighting coefficients represent the historical data at step i, and can also be considered as the weighting coefficients of the forward transfer coefficients for the ni-th record at step i. The random error term represents other random factors that the model fails to capture, such as noise, measurement errors, and external interference. The first fitting coefficient, the second fitting coefficient, and the weighting coefficients can be flexibly set according to actual conditions, and this embodiment does not explicitly limit them.
[0111] Step S23: When the forward transmission coefficient of the next k steps exceeds the threshold, a maintenance prompt is triggered.
[0112] Optionally, the threshold can be flexibly set according to actual conditions, and this embodiment does not explicitly limit it. The maintenance prompt may refer to a prompt issued when maintenance is required.
[0113] In one embodiment of this disclosure, the management of a GSG (Ground Signal Ground) radio frequency probe (model I110-A-GSG-100) is taken as an example:
[0114] Step 1: Inbound Labeling
[0115] SOLT calibration was performed using the Keysight N5290A millimeter-wave test system, and 12 error parameters were recorded.
[0116] Load a standard impedance element (ISS104-783) and collect S21 drift data (12 times at 10-minute intervals);
[0117] The initial impedance region (Z0) at a selected typical frequency point is plotted using the load traction system (Focus C110500Delta) for the standard sample.
[0118] Step 2: Task Matching
[0119] When a user selects the "High-precision S-parameter test" task, the system automatically filters:
[0120] E-class probes with ΔE < 1%, recent drift < 0.02 dB / h, and usage count < 1000 times, and with their test power locked at ≤ 20 dBm. Figure 7 This is a schematic diagram illustrating the dynamic grading process for consumables according to an embodiment of this disclosure. Figure 7 As shown, this embodiment will not elaborate further.
[0121] Step 3: Degradation Tracking
[0122] Automatically record after each test:
[0123] Read and record the number of needle strokes + n (mark an anomaly when Overtravel > 100μm);
[0124] Re-perform the SOLT calibration and update the calibration parameters;
[0125] Update the drift parameters if necessary;
[0126] Update the impedance region Zn and calculate ΔZ = Area(Z0∩Zn) / Area(Z0); where Area represents the impedance region.
[0127] The re-inspection process is triggered when ΔZ < 85%.
[0128] Implementation Case 1: Millimeter Wave Band (≥67GHz) Probe Management
[0129] Problem: Traditional management methods cannot detect high-frequency time-drift mutations.
[0130] In one disclosed embodiment, 1. a high-frequency weight w(f) is set. i ) = 2 (f>67GHz).
[0131] 2. ΔE was detected to increase from 1.2% to 2.5% at 67GHz (triggering a downgrade to Class S).
[0132] 3. The system automatically disables this probe for 67GHz high-precision testing and recommends using an E-grade spare part.
[0133] Results: The standard deviation of the test data decreased from ±0.15 dB to ±0.05 dB.
[0134] In one embodiment of this disclosure, a high-power aging test was conducted:
[0135] Conditions: The probe performs 100 consecutive OIP3 tests (Pout = 33dBm).
[0136] System response: When the Damage Index accumulates to 950 dBm·h, an early warning is triggered; the probe is automatically downgraded from Class E to Class S, limiting its subsequent test power to ≤25 dBm (decibels per milliwatt).
[0137] Results: The actual lifespan of the probe was extended by 40%, and no sudden damage occurred.
[0138] The technical effectiveness of the update method can be verified using the following test cases.
[0139] Test Case: GSG probe (110GHz) after 200 high-power tests (Pout = 33dBm):
[0140] ΔE increased from 0.8% to 1.5% (still maintaining the E level).
[0141] The impedance offset ΔZ increased from 1.2Ω to 2.8Ω (triggering S-level degradation).
[0142] The drift rate increased from 0.008 dB / h to 0.025 dB / h.
[0143] a) Comparative experimental data (traditional management vs. this system)
[0144]
[0145]
[0146] b) Verification of degradation trend prediction
[0147] Experimental setup: 10 Class E probes were used for continuous aging tests (power 33dBm, frequency 28GHz).
[0148] result:
[0149] System predicted lifespan: 520 injections on average
[0150] Actual number of failures: Average 508 times (error <3%)
[0151] Prediction accuracy of key parameters: ΔE (92%), ΔZ (88%), Drift Rate (95%)
[0152] c) Power compensation effect
[0153] Test Case: Class A probe with ΔZ = 4Ω, after enabling impedance compensation:
[0154] The continuous measurement error of PAE decreased from ±1.2% to ±0.5%.
[0155] OIP3 stability improved (standard deviation decreased from 0.8dB to 0.2dB).
[0156] Figure 8 This is a schematic diagram illustrating the structure of a consumable replacement device according to an embodiment of this disclosure. Figure 8 As shown, the consumables update device includes: a demand acquisition module 810, a consumables matching module 820, and a grade update module 830.
[0157] The requirement elicitation module 810 is used to obtain test task requirements.
[0158] The consumable matching module 820 is used to match test consumables with corresponding performance levels based on the test task requirements. The consumable performance levels include calibration error level, time drift rate level, and impedance region offset level.
[0159] The performance rating update module 830 is used to dynamically update the performance rating of the test consumables during the on-chip RF testing process.
[0160] The demand acquisition module 810, consumable matching module 820, and level update module 830 provided in this embodiment are... Figure 2 The steps S11 to S13 of the update method or the detailed steps or actions in its implementation method correspond one-to-one, and will not be repeated here.
[0161] In the several embodiments provided in this disclosure, it should be understood that the disclosed systems, apparatuses, or methods can be implemented in other ways. For example, the apparatus embodiments described above are merely illustrative; for instance, the division of modules / units is only a logical functional division, and in actual implementation, there may be other division methods. For example, multiple modules or units may be combined or integrated into another system, or some features may be ignored or not executed. Furthermore, the coupling or direct coupling or communication connection shown or discussed may be through some interfaces; the indirect coupling or communication connection of apparatuses or modules or units may be electrical, mechanical, or other forms.
[0162] The modules / units described as separate components may or may not be physically separate. The components shown as modules / units may or may not be physical modules; that is, they may be located in one place or distributed across multiple network units. Some or all of the modules / units can be selected to achieve the objectives of the embodiments of this disclosure, depending on actual needs. For example, the functional modules / units in the various embodiments of this disclosure may be integrated into one processing module, or each module / unit may exist physically separately, or two or more modules / units may be integrated into one module / unit.
[0163] Those skilled in the art will further recognize that the units and algorithm steps of the various examples described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, computer software, or a combination of both. To clearly illustrate the interchangeability of hardware and software, the components and steps of the various examples have been generally described in terms of functionality in the foregoing description. Whether these functions are implemented in hardware or software depends on the specific application and design constraints of the technical solution. Those skilled in the art can use different methods to implement the described functions for each specific application, but such implementation should not be considered beyond the scope of this disclosure.
[0164] This disclosure also provides a computer-readable storage medium storing a computer program thereon. When executed by a processor, the computer program implements the consumable replacement method, apparatus, medium, and electronic device provided in this disclosure. Those skilled in the art will understand that all or part of the steps in the methods of the above embodiments can be implemented by a program instructing a processor. The program can be stored in a computer-readable storage medium, which is a non-transitory medium, such as random access memory, read-only memory, flash memory, hard disk, solid-state drive, magnetic tape, floppy disk, optical disk, and any combination thereof. The storage medium can be any available medium accessible to a computer or a data storage device such as a server or data center that integrates one or more available media. The available medium can be a magnetic medium (e.g., floppy disk, hard disk, magnetic tape), an optical medium (e.g., digital video disc (DVD)), or a semiconductor medium (e.g., solid-state disk (SSD)).
[0165] This disclosure also provides an electronic device including a memory and a processor. The memory is used to store a computer program. In some implementations, the memory may include a computer system readable medium in the form of volatile memory, such as RAM and / or cache memory. The electronic device may further include other removable / non-removable, volatile / non-volatile computer system storage media. The memory may include at least one program product having a set (e.g., at least one) of program modules configured to perform the functions of the embodiments of this disclosure.
[0166] The processor is connected to the memory and is used to execute the computer program stored in the memory so that the electronic device performs the consumables update method, apparatus, medium and electronic device provided in the embodiments of this disclosure.
[0167] In some implementations, the processor can be a general-purpose processor, including a central processing unit (CPU), a network processor (NP), etc. In other implementations, the processor can also be a digital signal processor (DSP), an application-specific integrated circuit (ASIC), a field-programmable gate array (FPGA), or other programmable logic devices, discrete gate or transistor logic devices, or discrete hardware components.
[0168] The above embodiments are merely illustrative of the principles and effects of this disclosure and are not intended to limit this disclosure. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of this disclosure. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in this disclosure should still be covered by the claims of this disclosure.
Claims
1. A method for replacing consumables, characterized in that, include: Obtain test task requirements; Based on the requirements of the test task, test consumables with corresponding performance levels are matched. The performance levels of the consumables include calibration error level, time drift rate level, and impedance region offset level. During on-chip RF testing, the performance level of the test consumables is dynamically updated.
2. The update method according to claim 1, characterized in that, The calibration error is expressed as: Where ΔE represents the calibration error, and N represents the number of frequency points. This represents the input reflection coefficient measured at frequency point i. This represents the reference input reflection coefficient at frequency point i. This represents the output reflection coefficient measured at frequency point i. f represents the reference output reflection coefficient at frequency point i. i This indicates the frequency point i.
3. The update method according to claim 1, characterized in that, The time drift rate is expressed as: Where Drift Rate represents the time drift rate, S 21 (t) represents the forward propagation coefficient at time t, S 21 (0) represents the initial forward transmission coefficient, T represents the monitoring period, and f max This indicates the highest testing frequency.
4. The update method according to claim 1, characterized in that, The impedance region offset is expressed as: Where ΔZ represents the impedance region offset, and M represents the number of load traction test points. This represents the current impedance region of the j-th load traction test point. This represents the initial impedance region of the j-th load traction test point. This represents the real part of the current impedance region at the j-th load traction test point. Let represent the real part of the initial impedance region at the j-th load traction test point. This represents the imaginary part of the current impedance region at the j-th load traction test point. This represents the imaginary part of the initial impedance region at the j-th load traction test point.
5. The updating method according to claim 1, characterized in that, Also includes: During the on-chip RF test, the forward transmission coefficient is acquired at preset time intervals; The forward transmission coefficients are predicted based on the ARIMA model to obtain the forward transmission coefficients for the next k steps. When the forward transmission coefficient for the next k steps exceeds the threshold, a maintenance prompt is triggered.
6. The updating method according to claim 5, characterized in that, The forward transmission coefficients for the next k steps are expressed as: Among them, S 21 (t n+k ) represents the forward transmission coefficient for the next k steps, α represents the first fitting coefficient, and S 21 (t n ) represents the positive transport coefficient of the nth record, β represents the second fitting coefficient, p represents the autoregression order, and S 21 (t n-i ) represents the forward transmission coefficient of the ni-th record, ∈ represents the random error term, and φ i This represents the weighting coefficient of the historical data at step i.
7. The updating method according to claim 1, characterized in that, The method for dynamically updating the performance level of the test consumables during on-chip radio frequency testing includes: During the on-chip RF testing process, when the cumulative power degradation of the test consumable exceeds a preset value, the test consumable is forced to be downgraded.
8. A consumable replacement device, characterized in that, include: The requirement elicitation module is used to obtain test task requirements; The consumable matching module is used to match test consumables with corresponding performance levels based on the test task requirements. The consumable performance levels include calibration error level, time drift rate level, and impedance region offset level. The performance rating update module is used to dynamically update the performance rating of the test consumables during the on-chip RF testing process.
9. A computer-readable storage medium having a computer program stored thereon, characterized in that, When the computer program is executed by the processor, it implements the update method according to any one of claims 1 to 7.
10. An electronic device, characterized in that, include: The memory is configured to store executable programs; The processor is configured to invoke the program to cause the electronic device to perform the update method according to any one of claims 1 to 7.