Power supply adaptive active temperature compensation attenuator

Abstract

The invention discloses a power supply self-adaptive active temperature compensation attenuator which comprises a radio frequency attenuation circuit, a positive voltage temperature compensation driving circuit and a power supply self-adaptive adjusting circuit. The radio frequency attenuation circuit is connected in series in a signal link and comprises a transistor and a resistor; the positive voltage temperature compensation driving circuit comprises a transistor, a diode and a resistor. The driving transistor outputs a voltage playing a temperature compensation role by utilizing the temperature change of the electrical characteristic of the diode, and outputs the voltage to the radio frequency attenuation circuit in a voltage division manner; the power supply self-adaptive adjusting circuit comprises a resistor and a diode, the resistor and the diode adjust the grid voltage of a transistor in the driving circuit when the power supply fluctuates, the output voltage of the whole driving circuit is adjusted, and the influence of power supply fluctuation on the driving circuit is counteracted. Positive voltage is used for working, the structure is novel, the chip size is small, the temperature compensation characteristic is good, and the application range is wide; and the power supply interference resistance is good.

Description

Technical Field

[0001] This invention relates to the field of radio electronics, and more particularly to an active temperature-compensated attenuator that features unique power supply adaptability, good power supply interference resistance, and the ability to operate at positive voltage. Background Technology

[0002] Temperature-compensated attenuators are commonly used electronic devices. Since the output / input transmission characteristics (gain or loss) of all electronic devices are affected by temperature, their transmission characteristics are disturbed by temperature changes, leading to performance degradation. Temperature-compensated attenuators are used to compensate for the interference of temperature changes on electronic devices and play a crucial role.

[0003] Currently, the most commonly used temperature-compensated attenuators are passive structures, relying on the temperature characteristics of resistive materials to operate. These attenuators suffer from drawbacks such as large size and difficulty in integration. Active temperature-compensated attenuators are less common, mostly operating at negative voltages, making them unsuitable for most positive voltage environments, and easily susceptible to voltage fluctuations. Therefore, it is necessary to design a novel temperature-compensated attenuator structure that incorporates unique power supply adaptability, good power supply interference immunity, and the ability to operate at positive voltages. Summary of the Invention

[0004] Purpose of the invention: The purpose of this invention is to provide an active temperature-compensated attenuator that features enhanced power supply adaptability, good power supply interference resistance, and the ability to operate under positive voltage.

[0005] Technical Solution: The power-adaptive active temperature-compensated attenuator of this invention includes an RF attenuation circuit, a positive voltage temperature-compensated drive circuit, and a power-adaptive adjustment circuit. The RF attenuation circuit is connected in series in the signal link and includes a transistor and a resistor. The positive voltage temperature-compensated drive circuit includes a transistor, a diode, and a resistor. Utilizing the temperature change of the diode's electrical characteristics, the transistor outputs a voltage that provides temperature compensation, which is then divided and output to the RF attenuation circuit. The power-adaptive adjustment circuit includes a resistor and a diode. When power supply fluctuations occur, the resistor and diode adjust the gate voltage of the transistor in the drive circuit, thus regulating the output voltage of the entire drive circuit and offsetting the impact of power supply fluctuations on the drive circuit.

[0006] Furthermore, the radio frequency attenuation circuit is a voltage-controlled attenuator composed of transistors and resistors.

[0007] Furthermore, the RF attenuation circuit includes a transistor FET1 and resistors R1, R2, R3, and R4; R1 and R2 are connected in series, with one end connected to the RF input port and the other end connected to the RF output port; one end of R3 is connected to the common terminal of R1 and R2, and the other end is connected to the drain of FET1; the source of FET1 is grounded; one end of R4 is connected to the gate of FET1, and the other end is connected to the control voltage output by the driving circuit.

[0008] Further, the positive voltage temperature compensation drive circuit includes resistors R5, R6, R7, R8, R9, R10, R11, FET2, and diodes D1, D2, D3, D4, D5, D6, and D7; one end of R11 is connected to the power supply, and the other end is connected to the positive terminals of D4 and D1; the negative terminal of D4 is connected to the positive terminal of D5; the negative terminal of D5 is connected to the positive terminal of D6; the negative terminal of D6 is connected to the positive terminal of D7; the negative terminal of D7 is grounded; the negative terminal of D1 is connected to the positive terminal of D2; the negative terminal of D2 is connected to the positive terminal of D3; one end of R9 is connected to the negative terminal of D3, and the other end is connected to the gate of FET2; one end of R10 is grounded, and the other end is connected to the gate of FET2; one end of R8 is grounded, and the other end is connected to the source of FET2; one end of R7 is connected to the power supply, and the other end is connected to the drain of FET2; R5 and R6 are connected in series, one end is grounded, and the other end is connected to the drain of FET2; the connection point of R5 and R6 outputs a control voltage to the RF attenuation circuit.

[0009] Furthermore, the connection point of resistors R5 and R6 is connected to the gate of FET1 after being connected in series with R4.

[0010] Furthermore, the positive voltage temperature-compensated drive circuit includes an additional power supply adaptive adjustment circuit.

[0011] Furthermore, the power adaptive adjustment circuit includes a resistor R11 and diodes D4, D5, D6, and D7. When power fluctuations occur, the gate voltage of FET2 is adjusted. The adaptive adjustment circuit elements adjust the output voltage of the entire drive circuit to counteract the effects of power fluctuations on the drive circuit.

[0012] Furthermore, the attenuator can be manufactured using, but is not limited to, Si-based processes, GaAs processes, GaN processes, InP processes, and hybrid integrated circuit processes.

[0013] Furthermore, the RF attenuation circuit includes any one of the following structures, or is composed of multiple series and parallel connections: T-type circuit structure, π-type circuit structure, bridge T-type circuit structure, simplified T-type circuit structure, and Lange bridge circuit structure.

[0014] Beneficial effects: Compared with the prior art, the present invention has the following significant advantages: The present invention operates with positive voltage, has a novel structure, small chip size, good temperature compensation characteristics, and wide applicability; and has good anti-power interference capability. Attached Figure Description

[0015] Figure 1 This is a schematic diagram of the temperature-compensated attenuator circuit according to an embodiment of the present invention;

[0016] Figure 2 This is a layout diagram of the temperature-compensated attenuator circuit according to an embodiment of the present invention;

[0017] Figure 3This is a layout diagram of the temperature-compensated attenuator circuit according to an embodiment of the present invention;

[0018] Figure 4 This is a graph showing the relationship between insertion loss and frequency in the temperature-compensated attenuator circuit of this invention.

[0019] Figure 5 This is a graph showing the relationship between the insertion loss of the temperature-compensated attenuator circuit and the power supply voltage bias in an embodiment of the present invention (excluding the power supply adaptive adjustment circuit);

[0020] Figure 6 This is a graph showing the relationship between the insertion loss of the temperature-compensated attenuator circuit and the power supply voltage bias in an embodiment of the present invention (including the power supply adaptive adjustment circuit). Detailed Implementation

[0021] The technical solution of the present invention will be further described below with reference to the accompanying drawings.

[0022] like Figure 1 As shown, this invention proposes a novel power-adaptive active temperature-compensated attenuator, including an RF attenuation circuit, a positive voltage temperature-compensated drive circuit, and a power-adaptive adjustment circuit. The RF attenuation circuit is connected in series in the signal link to attenuate the signal. The positive voltage temperature-compensated drive circuit outputs a corresponding drive voltage according to changes in ambient temperature to control the attenuation of the RF attenuation circuit. The power-adaptive adjustment circuit provides a certain degree of immunity to power supply voltage interference.

[0023] The RF attenuation circuit is a voltage-controlled attenuator composed of transistors and resistors. The positive voltage temperature-compensated drive circuit includes transistors, diodes, and resistors. Utilizing the temperature change of the diode's electrical characteristics, it drives the transistor to output a temperature-compensated voltage, which is then divided and output to the RF attenuation circuit. The positive voltage temperature-compensated drive circuit also includes an additional power supply adaptive regulation circuit structure, including resistors and diodes. When the power supply fluctuates, the resistors and diodes adjust the gate voltage of the transistors in the drive circuit, thus regulating the output voltage of the entire drive circuit and offsetting the effects of power supply fluctuations, achieving a power supply adaptive effect.

[0024] The radio frequency attenuation circuit includes a transistor FET1 and resistors R1, R2, R3, and R4. R1 and R2 are connected in series, with one end connected to the radio frequency input port and the other end connected to the radio frequency output port. One end of R3 is connected to the common terminal of R1 and R2, and the other end is connected to the drain of FET1. The source of FET1 is grounded. One end of R4 is connected to the gate of FET1, and the other end is connected to the control voltage output by the drive circuit.

[0025] The positive voltage temperature compensation drive circuit includes resistors R5, R6, R7, R8, R9, R10, and R11, FET2, and diodes D1, D2, D3, D4, D5, D6, and D7. One end of R11 is connected to the power supply, and the other end is connected to the positive terminals of D4 and D1. The negative terminal of D4 is connected to the positive terminal of D5. The negative terminal of D5 is connected to the positive terminal of D6. The negative terminal of D6 is connected to the positive terminal of D7. The negative terminal of D7 is grounded. The negative terminal of D1 is connected to the positive terminal of D2. The negative terminal of D2 is connected to the positive terminal of D3. One end of R9 is connected to the negative terminal of D3, and the other end is connected to the gate of FET2. One end of R10 is grounded, and the other end is connected to the gate of FET2. One end of R8 is grounded, and the other end is connected to the source of FET2. One end of R7 is connected to the power supply, and the other end is connected to the drain of FET2. R5 and R6 are connected in series, with one end grounded and the other end connected to the drain of FET2. The connection point of R5 and R6 outputs a control voltage to the RF attenuation circuit. The connection point of resistors R5 and R6, after being connected in series with R4, is connected to the gate of FET1.

[0026] The power adaptive adjustment circuit includes a resistor R11 and diodes D4, D5, D6, and D7. When power fluctuations occur, the gate voltage of FET2 is adjusted. The adaptive adjustment circuit elements adjust the output voltage of the entire drive circuit to counteract the effects of power fluctuations on the drive circuit.

[0027] like Figure 2 The diagram shows an integrated chip layout. A temperature-compensated attenuator chip with an attenuation of 2dB is designed on a GaAs substrate, and the RF attenuation circuit is a T-type attenuator structure.

[0028] like Figure 3 The diagram shows an integrated chip layout. A temperature-compensated attenuator chip with an attenuation of 3dB was designed on a GaAs substrate, and the RF attenuation circuit is a π-type attenuator structure.

[0029] like Figure 4 The image shows the attenuation-frequency-temperature characteristics of the 2dB temperature-compensated attenuator chip during actual mounting testing. The chip operates at a frequency of DC-18GHz, with a temperature compensation range of -55℃ to +85℃ and an attenuation compensation range of -1dB to +0.8dB. It can be seen that as the temperature increases, the chip's attenuation continuously decreases, achieving good temperature compensation.

[0030] like Figure 5 The image shows a 3dB temperature-compensated attenuator chip without a power supply adaptive adjustment circuit. With the external power supply referenced at +5V, the interference to the attenuation of the attenuator chip varies by approximately ±1dB when the power supply is at +4.8V or +5.2V, which has a significant impact. High power supply accuracy is required for the chip's application.

[0031] like Figure 6The image shows a 3dB temperature-compensated attenuator chip with an adaptive power supply adjustment circuit. With the external power supply referenced to +5V, the interference variation in attenuation caused by the +4.8V and +5.2V power supply settings is <±0.1dB, which is virtually negligible. This chip is suitable for power supply fluctuations in most application environments.

Claims

1. A power-adaptive active temperature-compensated attenuator, characterized in that, It includes an RF attenuation circuit, a positive voltage temperature-compensated drive circuit, and a power supply adaptive adjustment circuit. The RF attenuation circuit is connected in series in the signal link and includes a transistor and a resistor. The positive voltage temperature-compensated drive circuit includes a transistor, a diode, and a resistor. Utilizing the temperature change of the diode's electrical characteristics, it drives the transistor to output a voltage that provides temperature compensation, which is then divided and output to the RF attenuation circuit. The power supply adaptive regulation circuit includes resistors and diodes. When the power supply fluctuates, the resistors and diodes adjust the gate voltage of the transistors in the drive circuit, thereby regulating the output voltage of the entire drive circuit and offsetting the impact of power supply fluctuations on the drive circuit.

2. The power-adaptive active temperature-compensated attenuator according to claim 1, characterized in that, The radio frequency attenuation circuit is a voltage-controlled attenuator consisting of transistors and resistors.

3. The power-adaptive active temperature-compensated attenuator according to claim 1, characterized in that, The radio frequency attenuation circuit includes a transistor FET1 and resistors R1, R2, R3, and R4. R1 and R2 are connected in series, with one end connected to the radio frequency input port and the other end connected to the radio frequency output port. One end of R3 is connected to the common terminal of R1 and R2, and the other end is connected to the drain of FET1. The source of FET1 is grounded. One end of R4 is connected to the gate of FET1, and the other end is connected to the control voltage output by the drive circuit.

4. The power-adaptive active temperature-compensated attenuator according to claim 1, characterized in that, The positive voltage temperature compensation drive circuit includes resistors R5, R6, R7, R8, R9, R10, R11, FET2, and diodes D1, D2, D3, D4, D5, D6, and D7. One end of R11 is connected to the power supply, and the other end is connected to the positive terminals of D4 and D1. The negative terminal of D4 is connected to the positive terminal of D5. The negative terminal of D5 is connected to the positive terminal of D6. The negative terminal of D6 is connected to the positive terminal of D7. The negative terminal of D7 is grounded. The negative terminal of D1 is connected to the positive terminal of D2. The negative terminal of D2 is connected to the positive terminal of D3. One end of R9 is connected to the negative terminal of D3, and the other end is connected to the gate of FET2. One end of R10 is grounded, and the other end is connected to the gate of FET2. One end of R8 is grounded, and the other end is connected to the source of FET2. One end of R7 is connected to the power supply, and the other end is connected to the drain of FET2. R5 and R6 are connected in series, with one end grounded and the other end connected to the drain of FET2. The connection point of R5 and R6 outputs a control voltage to the RF attenuation circuit.

5. The power-adaptive active temperature-compensated attenuator according to claim 1, characterized in that, The connection point of resistors R5 and R6 is connected to the gate of FET1 after being connected in series with R4.

6. The power-adaptive active temperature-compensated attenuator according to claim 1, characterized in that, The positive voltage temperature-compensated drive circuit includes an additional power adaptive adjustment circuit.

7. The power-adaptive active temperature-compensated attenuator according to claim 1, characterized in that, The power adaptive adjustment circuit includes a resistor R11 and diodes D4, D5, D6, and D7. When power fluctuations occur, the gate voltage of FET2 is adjusted. The adaptive adjustment circuit elements adjust the output voltage of the entire drive circuit to counteract the effects of power fluctuations on the drive circuit.

8. The power-adaptive active temperature-compensated attenuator according to claim 1, characterized in that, The attenuator is manufactured using methods including, but not limited to, Si-based processes, GaAs processes, GaN processes, InP processes, and hybrid integrated circuit processes.

9. The power-adaptive active temperature-compensated attenuator according to claim 1, characterized in that, The radio frequency attenuation circuit includes any one of the following structures: T-type circuit structure, π-type circuit structure, bridge T-type circuit structure, simplified T-type circuit structure, and Lange bridge circuit structure, or a combination of multiple series and parallel connections.

Images