System and method for testing high-power microwave coupling effect of antenna port of electronic equipment

Abstract

The invention relates to an electronic equipment antenna port high-power microwave coupling effect test system and method, and the system comprises a microwave anechoic chamber, a polarization characteristic test turntable, a directivity test turntable, a transmitting antenna, a power amplifier, a radio frequency signal source, a turntable controller, and a main control computer. The polarization characteristic test turntable and the directivity test turntable are arranged in the microwave darkroom, the polarization characteristic test turntable is connected with a transmitting antenna, and the directivity test turntable is used for placing electronic equipment; the power amplifier, the radio frequency signal source, the turntable controller and the main control computer are arranged outside the microwave darkroom; the power amplifier is connected with the transmitting antenna and the radio frequency signal source, and the turntable controller is connected with the polarization characteristic test turntable and the directivity test turntable; the main control computer is connected with the radio frequency signal source; and the main control computer is connected with the turntable controller.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of electronic device antenna port high-power microwave coupling effect test, and particularly relates to an electronic device antenna port high-power microwave coupling effect test system and a method thereof. BACKGROUND

[0002] High-power microwave is an important part of complex electromagnetic environment, and has the characteristics of high power, short pulse and wide frequency band. The radiation of high-power microwave to electronic equipment can cause high-power microwave effect, which can interfere with or even damage the electronic equipment, such as radar and electronic equipment on an airplane.

[0003] High-power microwave can enter the internal part of electronic equipment through front door coupling and back door coupling. The front door coupling refers to the coupling formed through the antenna port of the electronic equipment, and the back door coupling refers to the coupling formed by the high-power microwave entering the internal part of the electronic equipment through the shell aperture of the electronic equipment and the internal equivalent antenna, such as a cable and an aperture. The current interference and damage of high-power microwave to electronic equipment are mainly caused by the interference and damage of the front door channel of the electronic equipment. In order to improve the protection capability of the front door channel of the electronic equipment against high-power microwave, it is of great significance to study the coupling effect of the antenna port of the electronic equipment on high-power microwave.

[0004] At present, the high-power microwave coupling effect test system of the antenna port of the electronic equipment is built, and the high-power microwave coupling effect test is carried out. The existing standard high-power microwave effect test method only considers the coupling effect of the antenna port of the electronic equipment on high-power microwave with a fixed direction of arrival and a fixed polarization direction. However, in a complex electromagnetic environment, high-power microwave can come from any direction and have an uncertain polarization mode. Therefore, in order to study the coupling effect of the antenna port of the electronic equipment on high-power microwave with any direction and any polarization direction, the influence of the direction characteristic and the polarization characteristic of the antenna port of the electronic equipment on the high-power microwave coupling effect must be considered. In view of this, the application is proposed. SUMMARY

[0005] The purpose of the application is to solve the problem that the existing high-power microwave effect test is difficult to test the coupling effect of high-power microwave with any direction of arrival and any polarization direction on the electronic equipment, and to provide an electronic device antenna port high-power microwave coupling effect test system and a method thereof.

[0006] The technical scheme of the application is as follows:

[0007] An electronic device antenna port high-power microwave coupling effect test system, comprising a microwave anechoic chamber, a polarization characteristic test turntable, a directivity test turntable, a transmitting antenna, a power amplifier, a radio frequency signal source, a turntable controller and a host computer.

[0008] The polarization characteristic test turntable and the directivity test turntable are set up in a microwave anechoic chamber. The polarization characteristic test turntable is connected to the transmitting antenna, and the directivity test turntable is used to place electronic equipment.

[0009] The power amplifier, radio frequency signal source, turntable controller, and main control computer are installed outside the microwave anechoic chamber;

[0010] The power amplifier is connected to the transmitting antenna and the radio frequency signal source, and the turntable controller is connected to the polarization characteristic test turntable and the directivity test turntable.

[0011] The main control computer is connected to the radio frequency signal source and can control the radio frequency signal source and power amplifier to generate interference signals of different frequencies and powers and input them to the transmitting antenna, so that the transmitting antenna can transmit microwaves of corresponding interference frequencies and powers to electronic devices to generate the electromagnetic interference environment required for high-power microwave coupling effect testing of electronic device antenna ports.

[0012] The main control computer is connected to the turntable controller, which can control the deflection angle of the polarization characteristic test turntable and the directional test turntable, so as to adjust the polarization tilt angle and azimuth angle of the microwave on the electronic equipment.

[0013] According to at least one embodiment of this application, in the above-described high-power microwave coupling effect test system for the antenna port of an electronic device, the electronic device is placed in the center of the directional test turntable, within the far field region of the transmitting antenna.

[0014] A method for testing high-power microwave coupling effect at the antenna port of an electronic device, implemented based on the aforementioned test system for high-power microwave coupling effect at the antenna port of an electronic device, includes test recording steps and high-power microwave effect value conversion steps;

[0015] The test record steps include:

[0016] Step 1: Determine the frequency scanning parameters, power scanning parameters, azimuth scanning parameters, and polarization tilt scanning parameters for testing electronic equipment;

[0017] Step 2: Starting from the initial azimuth angle, transmit interference microwaves with the transmitting antenna to perform frequency scanning tests on the electronic equipment, and record the first interference power threshold when the electronic equipment changes from normal operation to abnormal operation under different frequencies and azimuth angles.

[0018] Step 3: Select the frequency corresponding to the minimum first interference power threshold as the sensitive frequency of the electronic device;

[0019] Step 4: Starting from the initial polarization tilt angle, at the sensitive frequency, transmit interference microwaves with the transmitting antenna to perform a power scan test on the electronic equipment, and record the second interference power threshold when the electronic equipment changes from normal operation to abnormal operation at different polarization tilt angles.

[0020] The steps for converting high-power microwave effect values ​​include:

[0021] Step 1: Based on the first interference power threshold matrix A M×N Calculate the antenna directivity correction factor matrix C of the electronic device. M×N Where M is the number of frequency scans and N is the number of azimuth scans;

[0022] Step 2: Based on the second interference power threshold matrix B H Calculate the correction factor matrix D for the antenna polarization characteristics of electronic devices. H Where H is the number of polarization tilt scans;

[0023] Step 3: Based on the antenna directivity correction factor matrix C of the electronic device M×N Polarization characteristic correction factor matrix D H Calculate the electronic equipment at different frequencies f and azimuth angles. Equivalent reduced value of high-power microwave effect at polarization tilt angle θ;

[0024] P equival(i,j,l) =P threshold(i,j,l) +C i,j +D l ;

[0025] in,

[0026] P equival(i,j,l) The equivalent calculated value of the high-power microwave effect of the electronic device under the i-th frequency scan, j-th azimuth angle scan, and l-th polarization tilt angle scan;

[0027] P threshold(i,j,l) The value of the high-power microwave effect of the electronic device under the i-th frequency scan, j-th azimuth angle scan, and l-th polarization tilt angle scan is such as the radiated power value at a distance of 1 meter from the electronic device, which can be taken as the design allowable value.

[0028] C i,j C is the directivity correction factor matrix for the antenna of an electronic device. M×N The data in the i-th row and j-th column;

[0029] D l Electronic device polarization characteristic correction factor matrix D H The data in the lth row.

[0030] According to at least one embodiment of this application, in the above-described method for testing the high-power microwave coupling effect at the antenna port of an electronic device, in step one of the test recording steps, it is determined that:

[0031] Frequency scanning parameters: start frequency f0, frequency step Δf, end frequency f m ;

[0032] Power scan parameters: starting power P0, power step ΔP, ending power P m ;

[0033] Azimuth scan parameters: Starting azimuth Azimuth step

[0034] Polarization tilt angle scan parameters: initial polarization tilt angle θ0, polarization tilt angle step Δθ.

[0036] 5. The method for testing high-power microwave coupling effect at the antenna port of an electronic device according to claim 4, characterized in that step one of the high-power microwave effect value conversion step specifically comprises:

[0037] C :,j =A :,k -A :,j j∈[1,N];

[0038] in,

[0039] C :,j C is the directivity correction factor matrix for the antenna of an electronic device. M×N The data in the j-th column;

[0040] A :,k The first interference power threshold matrix A M×N The data in the k-th column is set to 1;

[0041] A :,j The first interference power threshold matrix A M×N The data in the j-th column.

[0042] According to at least one embodiment of this application, in the above-described method for testing the high-power microwave coupling effect at the antenna port of an electronic device, step two of the high-power microwave effect value conversion step specifically includes:

[0043] D l =B o -B l l∈[1,H];

[0044] in,

[0045] D l D is the correction factor matrix for the antenna polarization characteristics of electronic devices.H The data in the lth row;

[0046] B o The second interference power threshold matrix B H The data in the 0th row is set to 1;

[0047] B i The second interference power threshold matrix B H The data in the lth row.

[0048] According to at least one embodiment of this application, the above-described method for testing high-power microwave coupling effects at the antenna port of an electronic device further includes a benchmark test configuration step, comprising:

[0049] Set the transmitting antenna to face the front of the electronic device;

[0050] The polarization of the transmitting antenna emitting interference microwaves is set to match the polarization of the electronic device's antenna;

[0051] The electronic equipment is positioned within the far-field region of the transmitting antenna. Attached Figure Description

[0052] Figure 1 This is a schematic diagram of a high-power microwave coupling effect testing system for an electronic device antenna port provided in an embodiment of this application;

[0053] Figure 2 This is a schematic diagram of the benchmark configuration provided in an embodiment of this application;

[0054] Figure 3 This is a schematic diagram of the experimental test recording steps and the high-power microwave coupling effect method for the antenna port of an electronic device provided in the embodiments of this application.

[0055] To better illustrate this embodiment, some content in the accompanying drawings may be omitted, enlarged, or reduced. They are for illustrative purposes only and should not be construed as limiting the scope of this application. Detailed Implementation

[0056] To make the technical solution and advantages of this application clearer, the technical solution of this application will be described in a clearer and more complete manner below with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are only some embodiments of this application, and are only used to explain this application, not to limit this application. It should be noted that, for ease of description, only the parts related to this application are shown in the accompanying drawings, and other related parts can be referred to the general design.

[0057] Furthermore, unless otherwise defined, the technical or scientific terms used in this application description shall have the ordinary meaning understood by one of ordinary skill in the art to which this application pertains. The word "comprising" as used in this application description indicates that the concept preceding the word encompasses the concepts listed following the word and their equivalents, without excluding other related concepts.

[0058] Furthermore, the terms indicating location used in the description of this application are only used to indicate relative directions or positional relationships. When the absolute position of the described object changes, its relative positional relationship may also change accordingly. It should also be noted that, unless otherwise explicitly specified and limited, terms such as "installation" and "connection" used in the description of this application should be interpreted broadly. For example, a connection can be a fixed connection or a detachable connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium. Those skilled in the art can understand its specific meaning in this application according to the specific circumstances.

[0059] A high-power microwave coupling effect testing system for antenna ports of electronic devices, such as Figure 1 As shown, it includes a microwave anechoic chamber, a polarization characteristic test turntable, a directivity test turntable, a transmitting antenna, a power amplifier, an RF signal source, a turntable controller, and a main control computer.

[0060] The polarization characteristic test turntable and the directivity test turntable are set up in the microwave anechoic chamber. The polarization characteristic test turntable is connected to the transmitting antenna, and the directivity test turntable is used to place electronic equipment. The electronic equipment is placed in the center of the directivity test turntable, which is in the far field region of the transmitting antenna.

[0061] The power amplifier, radio frequency signal source, turntable controller, and main control computer are set up outside the microwave anechoic chamber.

[0062] The power amplifier is connected to the transmitting antenna and the radio frequency signal source, and the turntable controller is connected to the polarization characteristic test turntable and the directivity test turntable.

[0063] The main control computer is connected to the radio frequency signal source and can control the radio frequency signal source and power amplifier to generate interference signals of different frequencies and powers and input them to the transmitting antenna, so that the transmitting antenna can transmit microwaves of corresponding interference frequencies and powers to the electronic equipment, which is used to generate the electromagnetic interference environment required for high-power microwave coupling effect testing of the antenna port of the electronic equipment.

[0064] The main control computer is connected to the turntable controller, which can control the deflection angle of the polarization characteristic test turntable and the directional test turntable, so as to adjust the polarization tilt angle and azimuth angle of the microwave on the electronic equipment.

[0065] Based on the high-power microwave coupling effect test system for electronic device antenna ports disclosed in the above embodiments, the high-power microwave coupling effect of electronic device antenna ports is tested, including benchmark test configuration steps, test recording steps, and high-power microwave effect value conversion steps, such as... Figure 3 As shown.

[0066] The benchmark configuration steps are used to establish a benchmark configuration. Establishing a benchmark configuration requires specifying three parameters: the direction of arrival of the microwave interference, the polarization mode of the interfering microwave, and the straight-line distance between the microwave transmitter and the electronic equipment.

[0067] The orientation of an electronic device can be defined as the direction its "front" faces. Under a benchmark test configuration, the angle between the direction of microwave interference and the orientation of the electronic device is 0 degrees; that is, the direction the front of the electronic device faces is the direction of the microwave interference. For example... Figure 2 As shown, the electronic device is placed at the origin of the coordinate system with its front facing the positive x-axis. Under the benchmark test configuration, microwave interference should propagate along the negative x-axis, i.e., the transmitting antenna is set to face the front of the electronic device.

[0068] Under the benchmark test configuration, the polarization of the interfering microwave, i.e., the polarization mode of the interfering microwave emitted by the transmitting antenna, is matched with the polarization mode of the electronic device antenna, as shown in Table 1 below: Polarization of the antenna of the electronic device Polarization of the interfering microwave emitted by the transmitting antenna Vertical polarization Vertical polarization Horizontal polarization Horizontal polarization Linear polarization with polarization tilt angle θ Linear polarization with polarization tilt angle θ Circular polarization Circular polarization Elliptical polarization Elliptical polarization

[0069] In the benchmark configuration, the electronic equipment is positioned within the far-field region of the transmitting antenna.

[0070] The test record steps are as follows:

[0071] Step 1: Determine the frequency scanning parameters, power scanning parameters, azimuth angle scanning parameters, polarization tilt angle scanning parameters for testing electronic equipment, and initialize the test system instruments.

[0072] Frequency scanning parameters: start frequency f0, frequency step Δf, end frequency f m .

[0073] Power scan parameters: starting power P0, power step ΔP, ending power P m .

[0074] Azimuth scan parameters: Starting azimuth Azimuth step Among them, the initial azimuth angle The azimuth angle can be obtained under the benchmark test configuration.

[0075] Polarization tilt angle scan parameters: initial polarization tilt angle θ0, polarization tilt angle step Δθ, where the initial polarization tilt angle θ0 can be the polarization tilt angle under the benchmark test configuration.

[0076] Step 2: Starting from the initial azimuth angle, transmit interfering microwaves using the transmitting antenna to perform a frequency scan test on the electronic device. Record the first interference power threshold at different frequencies and azimuth angles when the electronic device changes from normal operation to abnormal operation, such as the radiated power value at a distance of 1 meter from the electronic device, until returning to the initial azimuth angle. The first interference power threshold is recorded as shown in Table 2 below:

[0077] If the termination power P m If the electronic equipment still works normally under the specified conditions, it is determined that the electronic equipment is not sensitive at the corresponding frequency and azimuth angle.

[0078] Step 3: Select the frequency corresponding to the minimum first interference power threshold as the sensitive frequency of the electronic device.

[0079] Step 4: Starting from the initial polarization tilt angle, at the sensitive frequency, transmit interfering microwaves using the transmitting antenna to perform a power scan test on the electronic device. Record the second interference power threshold at different polarization tilt angles when the electronic device changes from normal operation to abnormal operation, such as the radiated power value at a distance of 1 meter from the electronic device, until it returns to the initial polarization tilt angle. The second interference power threshold is recorded as shown in Table 3 below:

[0080] If the termination power P m If the electronic device still works normally under the specified polarization tilt angle, it is determined that the electronic device is insensitive at the corresponding polarization tilt angle.

[0081] After the test is completed, shut down the test system instruments.

[0082] The specific steps for converting high-power microwave effect values ​​are as follows:

[0083] Step 1: Based on the first interference power threshold matrix A M×N Calculate the antenna directivity correction factor matrix C of the electronic device. M×N Where M is the number of frequency scans and N is the number of azimuth scans.

[0084] C :,j =A :,k -A :,j j∈[1,N];

[0085] in,

[0086] C :,j C is the directivity correction factor matrix for the antenna of an electronic device. M×N The data in the j-th column;

[0087] A :,kThe first interference power threshold matrix A M×N The data in the k-th column, where k is usually 1;

[0088] A :,j The first interference power threshold matrix A M×N The data in the j-th column.

[0089] Electronic device antenna directivity correction factor matrix C M×N By each C :,j The combined values ​​are shown in Table 4 below:

[0090] Step 2: Based on the second interference power threshold matrix B H Calculate the correction factor matrix D for the antenna polarization characteristics of electronic devices. H Where H is the number of polarization tilt scans.

[0091] D l =B o -B l l∈[1,H];

[0092] in,

[0093] D l D is the correction factor matrix for the antenna polarization characteristics of electronic devices. H The data in the lth row;

[0094] B o The second interference power threshold matrix B H The data in the o-th row, where o is usually 1;

[0095] B i The second interference power threshold matrix B H The data in the lth row.

[0096] Electronic device antenna polarization characteristic correction factor matrix D H By each D l The values ​​are combined and their distribution is shown in Table 3.

[0097] Step 3: Based on the antenna directivity correction factor matrix C of the electronic device M×N Polarization characteristic correction factor matrix D H Calculate the electronic equipment at different frequencies f and azimuth angles. Equivalent reduced value of high-power microwave effect at polarization tilt angle θ.

[0098] According to the directivity correction factor matrix C of the electronic device antenna M×N Polarization characteristic correction factor matrix D HIt can control electronic devices at any frequency f and azimuth angle. The equivalent conversion of the effect value of high-power microwave under polarization tilt angle θ, combined with the high-power microwave effect value of electronic equipment under benchmark test configuration, can predict the sensitivity characteristics of electronic equipment.

[0099] P equival(i,j,l) =P threshold(i,j,l) +C i,j +D l ;

[0100] in,

[0101] P equival(i,j,l) The equivalent calculated value of the high-power microwave effect of the electronic device under the i-th frequency scan, j-th azimuth angle scan, and l-th polarization tilt angle scan;

[0102] P threshold(i,j,l) The value of the high-power microwave effect of the electronic device under the i-th frequency scan, j-th azimuth angle scan, and l-th polarization tilt angle scan is such as the radiated power value at a distance of 1 meter from the electronic device, which can be taken as the design allowable value.

[0103] C i,j C is the directivity correction factor matrix for the antenna of an electronic device. M×N The data in the i-th row and j-th column;

[0104] D l Electronic device polarization characteristic correction factor matrix D H The data in the lth row.

[0105] For any frequency f and azimuth angle The equivalent reduced value P of high-power microwave effect in electronic devices under polarization tilt angle θ equival(i,j,l) If it exceeds the sensitivity threshold of the electronic device under the benchmark test configuration, i.e., the first interference power threshold matrix A M×N Data A in row i and column j i,j Then it can be determined that at this azimuth angle Electronic devices will be sensitive to the high-power microwave effect under the polarization tilt angle θ, and conversely, the electronic devices can be determined to be insensitive, that is, they can withstand the high-power microwave effect.

[0106] The above-described method for testing the high-power microwave coupling effect at the antenna port of an electronic device first defines a benchmark test configuration for the antenna port of the electronic device. Then, it tests the directional and polarization characteristics of the antenna of the electronic device to obtain a correction factor equivalent to the benchmark test configuration for interference in any azimuth and polarization direction. Using this correction factor, the effect value of high-power microwave at any azimuth angle and polarization tilt angle is converted to obtain the effect value under the benchmark test configuration, which is used to predict and evaluate the sensitivity characteristics of high-power microwave at any azimuth angle and polarization tilt angle.

[0107] In a specific example, the high-power microwave coupling effect test system for the antenna port of an airborne electronic device disclosed in the above embodiments is used to test the high-power microwave coupling effect at the antenna port of an airborne electronic device. The specific implementation is as follows:

[0108] Benchmark configuration steps:

[0109] Establish a benchmark configuration for arbitrary azimuth angles. The interference equivalent of the polarization tilt angle θ.

[0110] The electronic device is placed at the origin of the coordinate system with its display facing the positive x-axis. In the benchmark configuration, interfering microwaves are set to propagate along the negative x-axis.

[0111] Under the benchmark configuration, the interference polarization is matched with the polarization of the electronic device antenna, and the polarization of the microwave interference is set to vertical polarization.

[0112] In the benchmark configuration, the electronic equipment is positioned within the far-field region of the interfering transmitting antenna.

[0113] Test record steps:

[0114] The antenna characteristics of electronic devices are tested and recorded to calculate the equivalent value of high-power microwave effects of electronic devices at arbitrary azimuth and polarization tilt angles.

[0115] Step 1: Determine the frequency scanning parameters, power scanning parameters, azimuth angle scanning parameters, polarization tilt angle scanning parameters for testing electronic equipment, and initialize the test system instruments.

[0116] Frequency scanning parameters: starting frequency f0 = 350MHz, frequency step Δf = 5MHz, ending frequency f m =550MHz.

[0117] Power scan parameters: starting power P0 = -100dBm, power step ΔP = 1dB, ending power P m =10dBm.

[0118] Azimuth scan parameters: Starting azimuth Azimuth step

[0119] Polarization tilt angle scan parameters: initial polarization tilt angle θ0 = 0°, polarization tilt angle step Δθ = 1°.

[0120] Step 2: From the starting azimuth angle Initially, interference microwaves were emitted using the transmitting antenna to perform frequency scanning tests on the electronic equipment. The first interference power threshold at different frequencies and azimuth angles, from normal operation to abnormal operation, was recorded. The nominal value of the radio frequency signal source was used as the standard. Some data are shown in Table 5 below:

[0121] Step 3: Select the frequency corresponding to the minimum first interference power threshold as the sensitive frequency of the electronic device.

[0122] Step 4: Starting from the initial polarization tilt angle θ0, at the sensitive frequency, transmit interfering microwaves using the transmitting antenna to perform a power scan test on the electronic equipment. Record the second interference power threshold when the electronic equipment changes from normal operation to abnormal operation at different polarization tilt angles, using the nominal value of the radio frequency signal source as the standard. Some data are shown in Table 6 below:

[0123] After the test is completed, shut down the test system instruments.

[0124] Steps for converting high-power microwave effect values:

[0125] The calculation of the sensitivity characteristics of the electronic device itself is used to predict the sensitivity characteristics of high-power microwaves of arbitrary orientation and polarization.

[0126] Step 1: Based on the first interference power threshold matrix A M×N Calculate the antenna directivity correction factor matrix C of the electronic device. M×N Where M is the number of frequency scans and N is the number of azimuth scans.

[0127] C :,j =A :,k -A :,j j∈[1,N];

[0128] in,

[0129] C :,j C is the directivity correction factor matrix for the antenna of an electronic device. M×N The data in the j-th column;

[0130] A :,k The first interference power threshold matrix A M×N The data in the k-th column is set to 1;

[0131] A :,j The first interference power threshold matrix A M×N The data in the j-th column.

[0132] Electronic device antenna directivity correction factor matrix C M×N By each C :,j The combined values ​​are shown in Table 7 below:

[0133] Step 2: Based on the second interference power threshold matrix B H Calculate the correction factor matrix D for the antenna polarization characteristics of electronic devices. H Where H is the number of polarization tilt scans.

[0134] D l =B o -B l l∈[1,H];

[0135] in,

[0136] D l D is the correction factor matrix for the antenna polarization characteristics of electronic devices. H The data in the lth row;

[0137] B o The second interference power threshold matrix B H The data in the 0th row is set to 1;

[0138] B i The second interference power threshold matrix B H The data in the lth row.

[0139] Electronic device antenna polarization characteristic correction factor matrix D H By each D l The values ​​are combined and their distribution is shown in Table 6.

[0140] Step 3: Based on the antenna directivity correction factor matrix C of the electronic device M×N Polarization characteristic correction factor matrix D H Calculate the electronic equipment at different frequencies f and azimuth angles. Equivalent reduced value of high-power microwave effect at polarization tilt angle θ.

[0141] P equival(i,j,l) =P threshold(i,j,l) +C i,j +D l ;

[0142] in,

[0143] P equival(i,j,l)The equivalent calculated value of the high-power microwave effect of the electronic device under the i-th frequency scan, j-th azimuth angle scan, and l-th polarization tilt angle scan;

[0144] P threshold(i,j,l) The high-power microwave effect parameters of electronic equipment under the i-th frequency scan, j-th azimuth angle scan, and l-th polarization tilt angle scan are given.

[0145] C i,j C is the directivity correction factor matrix for the antenna of an electronic device. M×N The data in the i-th row and j-th column;

[0146] D l Electronic device polarization characteristic correction factor matrix D H The data in the lth row.

[0147] In azimuth The index of the high-power microwave effect of electronic equipment at a polarization tilt angle θ = 30°, and the radiated power value P at a distance of 1 meter from the electronic equipment. threshold As shown in Table 8 below: Frequency f Radiation power value P threshold ]]> 350 MHz -93 dBm 355 MHz -87 dBm 360 MHz 2 dBm 365 MHz -86 dBm 370 MHz -92 dBm …… …… 550 MHz -100 dBm

[0148] Determine the azimuth angle At a polarization tilt angle θ = 30°, the directivity correction factor C of the electronic device antenna :,3 Polarization characteristic correction factor D 30 Calculate the equivalent reduced value P of the high-power microwave effect of electronic devices at different frequencies f. equival As shown in Table 9 below: Frequency f Equivalent converted value P equival ]] 350 MHz -93 dBm + C 1,3 + D 30 ]]> 355 MHz -87 dBm + C 2,3 + D 30 ]]> 360 MHz 2 dBm + C 3,3 + D 30 ]]> 365 MHz -86 dBm + C 4,3 + D 30 ]]> 370 MHz -92 dBm + C 5,3 + D 30 ]]> …… …… 550 MHz -100 dBm + C m,3 +D 30 ]]>

[0149] The high-power microwave coupling effect testing system for electronic device antenna ports disclosed in the above embodiments has a simple architecture and a concise method for testing the high-power microwave coupling effect of electronic device antenna ports. It has a wide range of applications and can be used for effect testing of all frequency-using electronic devices. It can solve the problem of testing the effect of electronic devices on high-power microwaves at any azimuth angle and tilt angle. It can predict the sensitivity characteristics of electronic devices to high-power microwaves at any azimuth angle and tilt angle, and quickly evaluate the effectiveness of the protection measures for electronic device antenna ports. It can extend the coupling effect testing scenarios of electronic devices to complex electromagnetic environments such as electromagnetic pulses and high-intensity radiation fields.

[0150] The technical solution of this application has been described in conjunction with the preferred embodiments shown in the accompanying drawings. Those skilled in the art should understand that the scope of protection of this application is obviously not limited to these specific embodiments. Without departing from the principles of this application, those skilled in the art can make equivalent changes or substitutions to the relevant technical features, and the technical solutions after these changes or substitutions will all fall within the scope of protection of this application.

Claims

1. A high-power microwave coupling effect testing system for the antenna port of an electronic device, characterized in that, It includes a microwave anechoic chamber, a polarization characteristic test turntable, a directivity test turntable, a transmitting antenna, a power amplifier, an RF signal source, a turntable controller, and a main control computer; The polarization characteristic test turntable and the directivity test turntable are set up in a microwave anechoic chamber. The polarization characteristic test turntable is connected to the transmitting antenna, and the directivity test turntable is used to place electronic equipment. The power amplifier, radio frequency signal source, turntable controller, and main control computer are installed outside the microwave anechoic chamber; The power amplifier is connected to the transmitting antenna and the radio frequency signal source, and the turntable controller is connected to the polarization characteristic test turntable and the directivity test turntable. The main control computer is connected to the radio frequency signal source and can control the radio frequency signal source and power amplifier to generate interference signals of different frequencies and powers and input them to the transmitting antenna, so that the transmitting antenna can transmit microwaves of corresponding interference frequencies and powers to electronic devices to generate the electromagnetic interference environment required for high-power microwave coupling effect testing of electronic device antenna ports. The main control computer is connected to the turntable controller, which can control the deflection angle of the polarization characteristic test turntable and the directional test turntable, so as to adjust the polarization tilt angle and azimuth angle of the microwave on the electronic equipment.

2. The high-power microwave coupling effect testing system for electronic device antenna ports according to claim 1, characterized in that, The electronic equipment is placed in the center of the directional test turntable, within the far field region of the transmitting antenna.

3. A method for testing high-power microwave coupling effects at the antenna port of an electronic device, implemented based on the high-power microwave coupling effect testing system for the antenna port of an electronic device as described in claim 2, characterized in that, This includes the experimental test recording steps and the high-power microwave effect value conversion steps; The test record steps include: Step 1: Determine the frequency scanning parameters, power scanning parameters, azimuth scanning parameters, and polarization tilt scanning parameters for testing electronic equipment; Step 2: Starting from the initial azimuth angle, transmit interference microwaves with the transmitting antenna to perform frequency scanning tests on the electronic equipment, and record the first interference power threshold when the electronic equipment changes from normal operation to abnormal operation under different frequencies and azimuth angles. Step 3: Select the frequency corresponding to the minimum first interference power threshold as the sensitive frequency of the electronic device; Step 4: Starting from the initial polarization tilt angle, at the sensitive frequency, transmit interference microwaves with the transmitting antenna to perform a power scan test on the electronic equipment, and record the second interference power threshold when the electronic equipment changes from normal operation to abnormal operation at different polarization tilt angles. The steps for converting high-power microwave effect values ​​include: Step 1: Based on the first interference power threshold matrix A M×N Calculate the antenna directivity correction factor matrix C of the electronic device. M×N Where M is the number of frequency scans and N is the number of azimuth scans; Step 2: Based on the second interference power threshold matrix B H Calculate the correction factor matrix D for the antenna polarization characteristics of electronic devices. H Where H is the number of polarization tilt scans; Step 3: Based on the antenna directivity correction factor matrix C of the electronic device M×N Polarization characteristic correction factor matrix D H Calculate the electronic equipment at different frequencies f and azimuth angles. Equivalent reduced value of high-power microwave effect at polarization tilt angle θ; P equival(i,j,l) =P threshold(i,j,l) +C i,j +D l ; in, P equival(i,j,l) The equivalent calculated value of the high-power microwave effect of the electronic device under the i-th frequency scan, j-th azimuth angle scan, and l-th polarization tilt angle scan; P threshold(i,j,l) The value of the high-power microwave effect of the electronic device under the i-th frequency scan, j-th azimuth angle scan, and l-th polarization tilt angle scan is such as the radiated power value at a distance of 1 meter from the electronic device, which can be taken as the design allowable value. C i,j C is the directivity correction factor matrix for the antenna of an electronic device. M×N The data in the i-th row and j-th column; D l Electronic device polarization characteristic correction factor matrix D H The data in the lth row.

4. The method for testing high-power microwave coupling effect at the antenna port of an electronic device according to claim 3, characterized in that, In step one of the test record procedures, it is determined that: Frequency scanning parameters: start frequency f0, frequency step Δf, end frequency f m ; Power scan parameters: starting power P0, power step ΔP, ending power P m ; Azimuth scan parameters: Starting azimuth Azimuth step Polarization tilt angle scan parameters: initial polarization tilt angle θ0, polarization tilt angle step Δθ.

5. The method for testing high-power microwave coupling effect at the antenna port of an electronic device according to claim 4, characterized in that, Step one of the steps in the conversion of high-power microwave effect values ​​is as follows: C :,j =A :,k -A :,j j∈[1,N]; in, C :,j C is the directivity correction factor matrix for the antenna of an electronic device. M×N The data in the j-th column; A :,k The first interference power threshold matrix A M×N The data in the k-th column, where k is 1; A :,j The first interference power threshold matrix A M×N The data in the j-th column.

6. The method for testing high-power microwave coupling effect at the antenna port of an electronic device according to claim 5, characterized in that, Step two of the high-power microwave effect value conversion process is as follows: D l =B o -B l l∈[1,H]; in, D l D is the correction factor matrix for the antenna polarization characteristics of electronic devices. H The data in the lth row; B o The second interference power threshold matrix B H The data in the o-th row, where o is 1; B i The second interference power threshold matrix B H The data in the lth row.

7. The method for testing high-power microwave coupling effect at the antenna port of an electronic device according to claim 6, characterized in that, It also includes benchmark configuration steps, including: Set the transmitting antenna to face the front of the electronic device; The polarization of the transmitting antenna emitting interference microwaves is set to match the polarization of the electronic device's antenna; The electronic equipment is positioned within the far-field region of the transmitting antenna.

Images