A patterning substrate processing method, a chip and an electronic device

Abstract

The application provides a patterning substrate processing method, a chip and an electronic device, and comprises the following steps: screening according to the bottom width of a first patterning substrate, selecting the first patterning substrate with a bottom width lower than a preset bottom width as a second patterning substrate, and depositing a refractive layer on the second patterning substrate; spin coating photoresist on the refractive layer to form a photoresist layer, and the second patterning substrate, the refractive layer and the photoresist layer form a composite substrate; providing a master template, dropping AB glue on the master template, and heating and curing to form a soft film plate; placing the composite substrate and the soft film plate into a press machine, introducing nitrogen, pressing the composite substrate and the soft template, and exposing the composite substrate and the soft film plate to ultraviolet light to obtain a substrate to be etched; and performing dry etching on the substrate to be etched to obtain a final substrate. Through the above method, the patterning substrate with a small bottom width can be improved, the light extraction efficiency can be improved, and the rework and scrapping of the patterning substrate can be avoided.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and in particular to a patterned substrate processing method, a chip, and an electronic device. Background Technology

[0002] In the current development of semiconductor technology, patterned substrates are widely used in LED epitaxial growth, with patterned sapphire substrates (PSS) being a common example. Patterned substrates offer advantages in improving epitaxial crystal quality, internal quantum efficiency, and light extraction efficiency.

[0003] During the fabrication of patterned substrate wafers, factors such as etching process parameters, mask aperture size, and mask aperture shape can easily cause deviations in the bottom width of the pattern on the surface after etching. If the wafer bottom width is too large, it can be reduced by secondary etching; if the wafer bottom width is too small, traditional methods usually require rework and scrapping.

[0004] In rework processes, the existing methods for recycling patterned substrates with small bottom widths involve flat polishing of the wafer or thinning of the substrate, after which the material can be reused. However, this method has high rework costs and requires a long turnaround time. Existing technologies lack a means to directly process patterned substrates with small bottom widths and improve their light extraction efficiency. Summary of the Invention

[0005] To address the shortcomings of existing technologies, the present invention aims to provide a patterned substrate processing method, chip, and electronic device, thereby solving the problem that existing technologies lack methods for directly reprocessing patterned substrates with small bottom widths to improve their light extraction efficiency.

[0006] To achieve the above objectives, the present invention is implemented through the following technical solution:

[0007] A method for fabricating a patterned substrate includes the following steps:

[0008] A plurality of first patterned substrates are provided, the bottom width of the first patterned substrates is measured, the first patterned substrate with a bottom width lower than a preset bottom width is selected as the second patterned substrate, the second patterned substrate is cleaned, and a refractive layer is deposited on the second patterned substrate;

[0009] Photoresist is spin-coated onto the refractive layer to form a photoresist layer, and the second patterned substrate, the refractive layer, and the photoresist layer constitute a composite substrate;

[0010] A master template is provided, on which a plurality of periodically arranged protrusions are provided. AB glue is dripped onto the master template to form a soft film on the master template.

[0011] The composite substrate and the flexible film are placed in an imprinting machine, the composite substrate and the flexible template are pressed together, and the composite substrate and the flexible film are exposed to ultraviolet light to obtain the substrate to be etched.

[0012] The substrate to be etched is subjected to dry etching to etch the refractive layer into a plurality of refractive sheets, thereby obtaining the final substrate.

[0013] Compared with the prior art, the beneficial effects of the present invention are as follows: by selecting a second patterned substrate with a bottom width lower than the standard, and depositing the refractive layer on the second patterned substrate, it is beneficial to improve the light diffuse reflection efficiency of the second patterned substrate. The photoresist layer is further spin-coated on the refractive layer, and the flexible film plate with precise size and shape is prepared using the master template. The shape of the photoresist layer is precisely changed by the flexible film plate, that is, the pattern of the flexible film plate is transferred to the photoresist layer to precisely etch the refractive layer. Finally, the part of the refractive layer remaining on the second patterned substrate forms a low refractive index film on the pattern with a small bottom width. The second patterned substrate with a small bottom width is directly improved as a whole, improving the light extraction efficiency and brightness, and avoiding long-term rework and scrapping.

[0014] Furthermore, the thickness of the refractive layer is 1μm to 4μm, the refractive index of the refractive layer is 1.35 to 1.47, and the material of the refractive layer is SiOF.

[0015] Furthermore, the thickness of the photoresist layer is 0.5μm to 2μm, and the viscosity of the photoresist is 2CP to 10CP.

[0016] Furthermore, after the step of spin-coating photoresist onto the refractive layer to form a photoresist layer, wherein the second patterned substrate, the refractive layer, and the photoresist layer constitute a composite substrate, the method further includes:

[0017] The composite substrate is placed on a hot plate for baking, and the temperature of the hot plate is 70℃~130℃.

[0018] The composite substrate was placed on a cold plate and cooled to room temperature.

[0019] Furthermore, the protrusion is a cylinder with a bottom diameter of 1μm to 2.5μm, a height of 1μm to 3μm, and a distance of 1μm to 4μm between two adjacent cylinders.

[0020] Furthermore, the step of dripping AB adhesive onto the master template and heating it to cure to form a flexible film includes:

[0021] Drop 50g to 120g of AB glue onto the master template and let it stand so that the AB glue fills the side of the master template facing the protrusion.

[0022] The air bubbles in the AB glue are removed by cyclic vacuuming, and the AB glue is then allowed to stand again.

[0023] The AB adhesive is heated to cure and form a soft film plate to be demolded.

[0024] After the soft film to be demolded has cooled, a vacuum arm is used to separate the soft film to be demolded from the mother template to obtain the soft film.

[0025] Furthermore, the stage temperature of the embossing machine is 50℃~120℃, and the exposure time of the composite substrate and the soft film plate under ultraviolet light is 30s~80s.

[0026] Furthermore, the dry etching process employs BCl3 gas and CHF gas, with an input flow rate ratio of 10% to 80% for CHF gas and BCl3 gas. The flow rate of BCl3 gas ranges from 20 sccm to 100 sccm, and the flow rate of CHF gas ranges from 20 sccm to 80 sccm. The second patterned substrate includes a substrate and several patterned portions. The final substrate includes several composite patterned portions and the substrate. Each composite patterned portion includes the patterned portion and a refractive sheet covering the patterned portion. The ratio of the height to the bottom width of the composite patterned portion is 0.5 to 0.8.

[0027] This invention also provides a chip, including a substrate, which is fabricated using the patterned substrate fabrication method described in the above technical solutions.

[0028] This invention also provides an electronic device, including the chip described in the above technical solutions. Attached Figure Description

[0029] Figure 1 This is a flowchart of the patterned substrate fabrication method in the first embodiment of the present invention;

[0030] Figure 2 This is a schematic diagram of the composite substrate structure in the first embodiment of the present invention;

[0031] Figure 3 This is a schematic diagram of the structure of the mother template and the soft film plate in the first embodiment of the present invention;

[0032] Figure 4 This is a schematic diagram of the pressing of the soft film plate and the composite substrate in the first embodiment of the present invention;

[0033] Figure 5This is a schematic diagram of the final substrate structure in the first embodiment of the present invention;

[0034] Figure 6 This is a schematic diagram of the pressing of the soft film plate and the composite substrate in the second embodiment of the present invention;

[0035] Figure 7 This is a schematic diagram of the final substrate structure in the second embodiment of the present invention;

[0036] Explanation of key component symbols:

[0037] base 100 Graphics Department 110 Composite Graphics Section 120 Refractive layer 200 refracting sheet 210 Photoresist layer 300 Master template 400 convex part 410 Soft membrane 500 groove 510

[0038] The following detailed description, in conjunction with the accompanying drawings, will further illustrate the present invention. Detailed Implementation

[0039] To facilitate understanding of the present invention, a more complete description will be given below with reference to the accompanying drawings. Several embodiments of the invention are illustrated in the drawings. However, the invention can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.

[0040] It should be noted that when a component is said to be "fixed to" another component, it can be directly on the other component or there may be an intervening component. When a component is said to be "connected to" another component, it can be directly connected to the other component or there may be an intervening component. The terms "vertical," "horizontal," "left," "right," and similar expressions used in this document are for illustrative purposes only.

[0041] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term "and / or" as used herein includes any and all combinations of one or more of the associated listed items.

[0042] Please see Figures 1 to 5 The patterned substrate processing method in the first embodiment of the present invention includes the following steps:

[0043] Step S10: Provide a plurality of first patterned substrates, measure the bottom width of the first patterned substrates, select the first patterned substrates with a bottom width lower than a preset bottom width as second patterned substrates, clean the second patterned substrates, and deposit a refractive layer on the second patterned substrates;

[0044] Preferably, the first patterned substrate is a substrate after PSS (Photolithography and Separation) processing. The bottom width of the first patterned substrate is measured using an atomic force microscope. After measurement, AOI (Automated Optical Inspection) can be performed to collect all first patterned substrates with a bottom width lower than the preset bottom width. The preset bottom width is determined according to product requirement parameters. Specifically, in this embodiment, the preset bottom width is 1.8 μm. PSS processing typically involves fabricating an optical mask on a sapphire substrate, specifically using photoresist as the mask, and creating a periodic opening pattern on the photoresist. The patterned sapphire substrate, i.e., the first patterned substrate, is then obtained through wet or dry etching. It can be understood that... Residues are easily left on the surface of the patterned substrate after etching. The second patterned substrate is cleaned with an acid solution at a temperature of 100℃~130℃ to remove photoresist, metal residues, organic matter, etc. left after the PSS operation. Specifically, the cleaning temperature is 110℃. After cleaning with acid solution, the substrate is rinsed with water and dried. The second patterned substrate can then be used for subsequent processing steps. The second patterned substrate includes a patterned array formed by several raised patterns. In the process of preparing LED chip products, using a patterned sapphire substrate is beneficial to alleviate the stress during GaN epitaxial growth, reduce the density of dislocation defects, and improve crystal quality.

[0045] In step S10, the thickness of the refractive layer is 1μm to 4μm, the refractive index of the refractive layer is 1.35 to 1.47, and the material of the refractive layer is SiOF.

[0046] Preferably, the cleaned and dried second patterned substrate is placed into a PECVD machine for processing. Specifically, the patterned substrate wafer is placed on a wafer carrier and transferred by a robotic arm to the cavity of the PECVD machine. The cavity pressure range of the PECVD machine is set to 1500 Pa to 3000 Pa, the cavity temperature is set to 250°C to 350°C, the RF power range is set to 500 W to 2000 W, and the introduced gas is SiH4, N2O, N2, and C2F6, wherein the concentration of SiH4 is... The ratio is 100%, and the range of SiH4:N2O:C2F6 is 1:25:1 to 1:60:5. SiH4, N2O, N2, and C2F6 react to generate SiOF, SiF4, CO2, N2, and H2. Specifically, the cavity pressure of the PECVD machine is set to 2000Pa, the cavity temperature of the PECVD machine is 300℃, and the radio frequency power of the PECVD machine is 1500W. Further, in this embodiment, the thickness of the refractive layer 200 is 2.5μm, and the refractive index of the refractive layer 200 is 1.4.

[0047] Step S20: Spin-coat photoresist onto the refractive layer to form a photoresist layer, wherein the second patterned substrate, the refractive layer, and the photoresist layer constitute a composite substrate;

[0048] Preferably, please refer to Figure 2 The raised pattern in the second patterned substrate is the patterned portion 110. The thickness of the refractive layer 200 is greater than the height of the patterned portion 110. After the refractive layer 200 is deposited, it completely covers the entire patterned portion 110. The wafer with the refractive layer 200 deposited is placed in a spin coater for processing, specifically in the spin coater's spin coater tank.

[0049] In step S20, the thickness of the photoresist layer is 0.5μm to 2μm, and the viscosity of the photoresist is 2CP to 10CP.

[0050] A low-viscosity negative photoresist is spin-coated to facilitate imprinting in subsequent processing steps. The thickness of the photoresist layer 300 is set according to the etching selectivity ratio, which refers to the ratio of the etching rate of one material to that of another material under the same etching conditions. In this embodiment, it is the etching selectivity ratio of the photoresist to SiOF. Specifically, in this embodiment, the thickness of the photoresist layer 300 is 1.8 μm, and the viscosity of the photoresist is 3 CP.

[0051] Following step S20, the method further includes:

[0052] S210: The composite substrate is placed on a hot plate for baking, and the temperature of the hot plate is 70℃~130℃;

[0053] S220: Place the composite substrate on a cold plate to cool it to room temperature.

[0054] Preferably, the temperature of the hot plate used in this embodiment is 100°C. It can be understood that the photoresist is not cured in S210 to S220 in order to subsequently change the pattern of the photoresist layer 300.

[0055] Step S30: Provide a master template with a plurality of periodically arranged protrusions on the master template, and drip AB glue onto the master template to form a soft film on the master template;

[0056] Understandably, the soft film plate is made by means of AB adhesive, which is low cost and high preparation efficiency. It is beneficial to make the master template 400 with accurate pattern after the pattern is made, and then transfer the pattern to the uncured photoresist layer 300 through the soft film plate 500.

[0057] In step S30, the protrusion is a cylinder with a bottom diameter of 1μm to 2.5μm, a height of 1μm to 3μm, and a distance of 1μm to 4μm between two adjacent cylinders.

[0058] Preferably, the size of the cylinder is set according to the graphic part 110 and the preset bottom width, and the arrangement period is set according to the arrangement period of the graphic part 110 and the product requirements. The height of the cylinder is greater than the thickness of the photoresist layer 300. Specifically, in this embodiment, the bottom diameter of the cylinder is 2μm, the height of the cylinder is 2μm, the distance between two adjacent cylinders is 1μm, and the distance between the axes of two adjacent cylinders is 3μm, that is, the arrangement period of the array formed by the cylinders is 3μm.

[0059] Step S30 includes:

[0060] S310: Drop 50g to 120g of AB glue onto the master template and let it stand so that the AB glue fills the side of the master template facing the protrusion.

[0061] Preferably, please refer to Figure 3 The mother template 400 is made of silicone. When the mother template 400 is laid flat, the protrusions 410 face upwards. A certain amount of AB glue is dripped onto the mother template 400 and allowed to flow naturally under gravity, filling the gaps between several protrusions 410. Specifically, in this embodiment, the mass of the AB glue is 110g.

[0062] S320: The air bubbles in the AB glue are removed by cyclic vacuuming, and the AB glue is allowed to stand again;

[0063] Understandably, by cyclically pumping out the vacuum, air bubbles in the soft film plate 500 can be eliminated as much as possible. After each air bubble removal, the plate can be left to stand for a period of time, which is beneficial for the unsolidified colloid to further fill the gaps between the array of cylinders.

[0064] S330: Heat the AB adhesive to cure and form a soft film plate to be demolded;

[0065] Preferably, the temperature for heating the AB adhesive is 100℃~150℃, and in this embodiment, 100℃ is specifically used for heating.

[0066] S340: After the soft film to be demolded has cooled, a vacuum arm is used to separate the soft film to be demolded from the mother template to obtain the soft film.

[0067] Preferably, the production and demolding of the soft film plate 500 are achieved by a mold flipping machine. A plurality of grooves 510 are formed on the soft film plate 500, and the position and shape of the grooves 510 are consistent with the cylinder on the mother template 400.

[0068] Step S40: Place the composite substrate and the flexible film plate into an imprinting machine, press the composite substrate and the flexible template together, and expose the composite substrate and the flexible film plate to ultraviolet light to obtain the substrate to be etched;

[0069] Understandably, after the imprinting is completed, the pattern formed on the photoresist layer 200 is consistent with the pattern of the master template 400, and the photoresist layer 200 is used as a mask for subsequent etching.

[0070] In step S40, the stage temperature of the imprinting machine is 50℃~120℃, and the exposure time of the composite substrate and the soft film plate under ultraviolet light is 30s~80s.

[0071] Preferably, the composite substrate is placed on the stage of the imprinting machine, and the flexible film plate 500 is placed in the fixed position of the imprinting machine, with the flexible film plate 500 positioned above the composite substrate. Nitrogen gas is introduced, causing the stage to move upward until the composite substrate and the flexible film plate 500 come into contact. An ultraviolet lamp is then turned on to irradiate the composite substrate and the flexible film plate 500. (See also...) Figure 4 The flexible film plate 500 contacts the wafer with photoresist and uses a nanoimprinting process. The flexible film plate 500 forms uniform pressure on the composite substrate, and the photoresist is squeezed and filled into the groove 510 under the pressure, forming a pattern consistent with the master template 400. The stage temperature is selected as 100°C and the exposure time is selected as 60s. After the photoresist is cured, the composite substrate is lowered by driving the stage, thereby separating the cured photoresist from the flexible film plate 500 and realizing pattern transfer.

[0072] Step S50: Dry etching is performed on the substrate to be etched to etch the refractive layer into a plurality of refractive sheets to obtain the final substrate.

[0073] In step S50, the dry etching uses BCl3 gas and CHF gas. The input flow rate ratio of CHF gas to BCl3 gas is 10% to 80%. The gas flow rate of BCl3 gas is in the range of 20 sccm to 100 sccm, and the gas flow rate of CHF gas is in the range of 20 sccm to 80 sccm. The second patterned substrate includes a substrate and several patterned portions. The final substrate includes several composite patterned portions and the substrate. The composite patterned portion includes the patterned portion and the refractive sheet covering the patterned portion. The ratio of the height to the bottom width of the composite patterned portion is 0.5 to 0.8.

[0074] Preferably, an ICP etching process is used. Within the ICP etching equipment, the upper electrode power is 500W–2000W, the lower electrode power is 150W–500W, the internal pressure of the ICP etching equipment is adjustable within the range of 2.5mT–4mT, the cooling temperature is adjustable within the range of 20℃–40℃, and the He gas pressure is adjustable within the range of 3T–6T. Specifically, in this embodiment, the input flow rate ratio of CHF gas to BCl3 gas is selected as 60%, the gas flow rate of BCl3 gas is selected as 80 sccm, the gas flow rate of CHF gas is selected as 40 sccm, the upper electrode power is 500W, the lower electrode power is 250W, the internal pressure of the ICP etching equipment is 3mT, the cooling temperature is 35℃, and the He gas pressure is 3T.

[0075] Preferably, the arrangement period of the cylinders and the arrangement period of the patterned portions 110 affect the coverage position of the refractive sheet 210 on the patterned portions 110. It can cover part of the patterned portions 110 or cover all of the patterned portions 110. Different final substrates will have different effects on the growth of the epitaxial layer. The coverage and arrangement of the refractive sheet 210 can be designed according to the requirements. Specifically, in this embodiment, each of the patterned portions 110 on the substrate 100 is covered by the refractive sheet 210, that is, all the protrusions on the surface of the final substrate are the composite patterned portions 120.

[0076] The patterned portion 110, due to the coverage of the refractive sheet 210, forms the composite patterned portion 120, changing the original pattern size. The size of the composite patterned portion 120 in the final substrate is affected by the etching selectivity and the thickness of the refractive layer 200, directly affecting the diffuse reflection and light extraction efficiency. Specifically, the ratio of the height to the bottom width of the composite patterned portion is 0.7. Please refer to [link / reference]. Figure 5Understandably, the composite pattern section 120 improves the height-to-width ratio of the pattern with a small bottom width, making up for the problem of low light extraction efficiency caused by insufficient bottom width of the pattern section 110. When light enters the composite pattern from the GaN epitaxy, it is easier to generate diffuse reflection due to the difference in pattern size, thereby improving the light diffuse reflection efficiency and increasing the light brightness.

[0077] The patterned substrate fabrication method provided in the second embodiment of the present invention differs from that in the first embodiment in that the distance between two adjacent cylinders is 4 μm, that is, the period of the array formed by the cylinders is 6 μm. Please refer to [link to relevant documentation]. Figure 6 and Figure 7 The refractive indexes 210 are spaced apart. The final substrate includes a plurality of patterned portions 110 and a plurality of composite patterned portions 120. The patterned portions 110 and the composite patterned portions 120 are staggered. An epitaxial layer is deposited based on the final substrate. Dislocation defects are mainly distributed between adjacent composite patterned portions 120. It can be understood that in the epitaxial layer deposited based on the final substrate in the first embodiment, dislocation defects are mainly located between the gaps of adjacent composite patterned portions 120. In the epitaxial layer deposited based on the final substrate in the second embodiment, dislocation defects are mainly located around the patterned portion 110 between two composite patterned portions 120. The arrangement period of the cylinders on the master template 400 can be designed according to product and process requirements.

[0078] The third embodiment of the present invention provides a chip including a substrate, the substrate being fabricated by the patterned substrate fabrication method described in the first embodiment.

[0079] The fourth embodiment of the present invention provides an electronic device, including the chip described in the third embodiment.

[0080] In the description of this specification, references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0081] The embodiments described above are merely illustrative of several implementations of the present invention, and while the descriptions are specific and detailed, they should not be construed as limiting the scope of the present invention. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of the present invention, and these modifications and improvements all fall within the scope of protection of the present invention. Therefore, the scope of protection of this patent should be determined by the appended claims.

Claims

1. A method for fabricating a patterned substrate, characterized in that, Includes the following steps: A plurality of first patterned substrates are provided, the bottom width of the first patterned substrates is measured, the first patterned substrate with a bottom width lower than a preset bottom width is selected as the second patterned substrate, the second patterned substrate is cleaned, and a refractive layer is deposited on the second patterned substrate; Photoresist is spin-coated onto the refractive layer to form a photoresist layer, and the second patterned substrate, the refractive layer, and the photoresist layer constitute a composite substrate; A master template is provided, on which a plurality of periodically arranged protrusions are provided. AB glue is dripped onto the master template to form a soft film on the master template. The composite substrate and the flexible film are placed in an imprinting machine, pressed together, and exposed to ultraviolet light to obtain the substrate to be etched. The substrate to be etched is subjected to dry etching to etch the refractive layer into a plurality of refractive sheets to obtain a final substrate. The second patterned substrate includes a substrate and a plurality of patterned portions. The final substrate includes a plurality of composite patterned portions and the substrate. The composite patterned portion includes the patterned portion and the refractive sheet covering the patterned portion. The ratio of the height to the bottom width of the composite patterned portion is 0.5 to 0.

8.

2. The patterned substrate processing method according to claim 1, characterized in that, The thickness of the refractive layer is 1μm to 4μm, the refractive index of the refractive layer is 1.35 to 1.47, and the material of the refractive layer is SiOF.

3. The patterned substrate processing method according to claim 1, characterized in that, The thickness of the photoresist layer is 0.5μm to 2μm, and the viscosity of the photoresist is 2CP to 10CP.

4. The patterned substrate processing method according to claim 1, characterized in that, After the step of spin-coating photoresist onto the refractive layer to form a photoresist layer, wherein the second patterned substrate, the refractive layer, and the photoresist layer constitute a composite substrate, the method further includes: The composite substrate is placed on a hot plate for baking, and the temperature of the hot plate is 70℃~130℃. The composite substrate was placed on a cold plate and cooled to room temperature.

5. The patterned substrate processing method according to claim 1, characterized in that, The protrusion is a cylinder with a bottom diameter of 1μm to 2.5μm, a height of 1μm to 3μm, and a distance of 1μm to 4μm between two adjacent cylinders.

6. The patterned substrate processing method according to claim 1, characterized in that, The step of dripping AB glue onto the master template to form a flexible film on the master template includes: Drop 50g~120g of AB glue onto the master template and let it stand so that the AB glue fills the side of the master template facing the protrusion. The air bubbles in the AB glue are removed by cyclic vacuuming, and the AB glue is then allowed to stand again. The AB adhesive is heated to cure and form a soft film plate to be demolded. After the soft film to be demolded has cooled, a vacuum arm is used to separate the soft film to be demolded from the mother template to obtain the soft film.

7. The patterned substrate processing method according to claim 1, characterized in that, The stage temperature of the embossing machine is 50℃~120℃, and the exposure time of the composite substrate and the soft film plate under ultraviolet light is 30s~80s.

8. The patterned substrate processing method according to claim 2, characterized in that, The dry etching process uses BCl3 gas and CHF gas, with the input flow rate ratio of CHF gas to BCl3 gas being 10% to 80%. The flow rate of BCl3 gas is in the range of 20 sccm to 100 sccm, and the flow rate of CHF gas is in the range of 20 sccm to 80 sccm.

9. A chip, comprising a substrate, characterized in that, The substrate is fabricated by the patterned substrate fabrication method as described in any one of claims 1 to 7.

10. An electronic device, characterized in that, Includes the chip as described in claim 9.

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