Material for forming a patterned coating comprising a plurality of portions and devices

Abstract

A layered semiconductor device includes a mixed ligand compound comprising: a cyclophosphazene core moiety, a first ligand moiety, and a second ligand moiety. The first ligand moiety and the second ligand moiety are each bonded to the core moiety. A composition comprising a plurality of compounds, each of the plurality of compounds comprising a cyclophosphazene core moiety and at least one ligand moiety bonded to the cyclophosphazene core moiety; the plurality of compounds comprise at least one common ligand moiety.

Description

[0001] Related patent applications This application claims priority to U.S. Provisional Application No. 63 / 498,486, filed April 26, 2023, and U.S. Provisional Application No. 63 / 587,027, filed September 29, 2023, the contents of which are incorporated herein by reference in their entirety. Technical Field

[0002] This disclosure relates to layered semiconductor devices, and in some non-limiting examples to layered optoelectronic devices having multiple sub-pixel emitting regions and multiple light-transmitting regions, each sub-pixel including a first electrode and a second electrode separated by a semiconductor layer, wherein at least one of these electrodes, electrically coupled conductive coatings thereto, and transmissive regions can be patterned by depositing a patterned coating, which can act as and may be at least one of nucleation inhibition coatings for patterning at least one conductive deposition material, such as that deposited during a device fabrication process, to form such electrodes and conductive coatings, and to prevent the deposition of such deposition material to form such transmissive regions. Background Technology

[0003] In optoelectronic devices such as organic light-emitting diodes (OLEDs), at least one semiconductive layer, including an emitting layer, may be disposed between a pair of electrodes (such as an anode and a cathode). The anode and cathode may be electrically coupled to a power source and generate holes and electrons, respectively, which migrate toward each other through the at least one semiconductive layer. When a pair of holes and electrons combine, the emitting layer may emit light in the form of photons.

[0004] OLED display panels (such as active-matrix OLED (AMOLED) panels) may include multiple pixels, each pixel further including multiple (including but not limited to one of three and four) sub-pixels. In some non-limiting examples, the various sub-pixels of a pixel may be characterized by at least one of three and four different colors (including but not limited to R (red), G (green), and B (blue)). Each (sub)pixel may have an associated emission region comprising an associated pair of electrodes and a stack of at least one semiconductive layer between these electrodes. In some non-limiting examples, each sub-pixel of a pixel may emit light, including but not limited to photons, having an associated wavelength spectrum characterized by a given color (including but not limited to one of R (red), G (green), B (blue), and W (white)). In some non-limiting examples, the (sub)pixels may be selectively driven by driving circuitry including at least one thin-film transistor (TFT) structure electrically coupled to conductive metal lines within a substrate, and in some non-limiting examples, electrodes and at least one semiconductive layer are deposited on the substrate. In some non-limiting examples, various coatings (layers) of such panels may be formed by a vacuum-based deposition process.

[0005] In an AMOLED panel, a sub-pixel emits light when a voltage is applied between its anode and cathode. The emission of light from each sub-pixel in such a panel can be controlled by controlling the voltage applied between the anode and cathode. In cases where a common cathode is provided across multiple sub-pixels, the voltage across the anode and cathode in each sub-pixel can be controlled by modulating the voltage of the anode. In some non-limiting examples, adjacent anodes may be spaced apart laterally and an at least one non-emitting region may be provided between them.

[0006] In some non-limiting examples, there may be an objective to provide a patterned conductive deposition layer for each (sub)pixel of the panel on at least one of the following during the OLED manufacturing process: selectively depositing a closed coating of conductive deposition material to form device features, such as, but not limited to, electrodes and conductive elements electrically coupled thereto, and regions substantially lacking deposition material (including but not limited to) to define transparent areas of the device.

[0007] In some non-limiting examples, one approach to doing this involves inserting a fine metal mask (FMM) during the deposition of the deposited material. However, such deposited materials can have significantly high evaporation temperatures, which can affect at least one of the ability to reuse the FMM and / or the accuracy of the achievable pattern, and is accompanied by increased cost, effort, and complexity.

[0008] In some non-limiting examples, one approach to doing this involves depositing a material and then removing (including, but not limited to, areas drilled by laser drilling) the unwanted areas to form a pattern. However, the removal process typically involves either the generation or presence of debris, which can affect the yield of the manufacturing process.

[0009] In some non-limiting examples, such methods may have reduced applicability in certain applications. In some non-limiting examples, this method may have reduced applicability to devices with certain morphological features.

[0010] In some non-limiting applications, there may be a goal of providing an improved mechanism for selective deposition of conductive deposition materials. Summary of the Invention

[0011] According to a broad aspect, a layered semiconductor device comprising a mixed ligand compound comprising: a cyclophosphonitrile core portion, a first ligand portion, and a second ligand portion, wherein the first ligand portion and the second ligand portion are each bonded to the core portion.

[0012] In some non-limiting examples, at least one of the first ligand portion and the second ligand portion may be a fluorine (F) portion.

[0013] In some non-limiting examples, each of the first and second ligand portions may independently include at least one of the following: F, chlorine (Cl), hydroxyl group, substituted alkyl group, unsubstituted alkyl group, substituted fluoroalkyl group, unsubstituted fluoroalkyl group, substituted cycloalkyl group, unsubstituted cycloalkyl group, substituted fluorocycloalkyl group, unsubstituted fluorocycloalkyl group, substituted heterocycloalkyl group, unsubstituted heterocycloalkyl group, substituted fluoroheterocycloalkyl group, unsubstituted fluoroheterocycloalkyl group, unsubstituted fluoroheterocycloalkyl group, substituted alkoxy group, unsubstituted alkoxy group, substituted fluoroalkoxy group, unsubstituted fluoroalkoxy group. Groups, substituted aryloxy groups, unsubstituted aryloxy groups, substituted fluoroaryloxy groups, unsubstituted fluoroaryloxy groups, substituted heteroaryloxy groups, unsubstituted heteroaryloxy groups, substituted fluoroheteroaryloxy groups, unsubstituted fluoroheteroaryloxy groups, substituted aryl groups, unsubstituted aryl groups, substituted fluoroaryl groups, unsubstituted fluoroaryl groups, substituted alkylsilyl groups, unsubstituted alkylsilyl groups, substituted alkylsiloxy groups, unsubstituted alkylsiloxy groups, amino groups, amine groups, alkylamine groups, arylamine groups, nitrile groups, phosphazo groups, thioalkyl groups, pentafluorothioalkyl groups, thioether groups, sulfonyl groups, thiol groups, alkylthioyl groups, trifluoromethylthioyl groups, carbonyl groups, siloxane groups, silyl groups, and organosilicon groups.

[0014] In some non-limiting examples, each of the first ligand portion and the second ligand portion may include a linker portion. R B End portion R T and arranged in the connecting base part R B and end portion R T The middle part between R D .

[0015] In some non-limiting examples, each of the first ligand portion and the second ligand portion can be independently represented by equation (E-1): (E-1) in: * It can indicate the attachment point with the cyclophosphamide core. R B Indicates the connecting base portion. R D Indicates the middle part, and R T Indicates the end portion.

[0016] In some non-restrictive examples, R B It may contain one of the following: O, N, S, substituted alkylene, unsubstituted alkylene, substituted fluoroalkylene, unsubstituted fluoroalkylene, substituted cycloalkylene, unsubstituted cycloalkylene, substituted arylene, unsubstituted arylene, substituted heteroarylene, and unsubstituted heteroarylene.

[0017] In some non-restrictive examples, R B It can be selected from: -O- and -O-CH2-.

[0018] In some non-restrictive examples, R D It may contain at least one of the following: O, ether, substituted alkylene, unsubstituted alkylene, substituted fluoroalkylene, unsubstituted fluoroalkylene, substituted cycloalkylene, unsubstituted cycloalkylene, substituted arylene, unsubstituted arylene, substituted phenyl, unsubstituted phenyl, substituted biphenyl, unsubstituted biphenyl, substituted naphthylene, unsubstituted naphthylene, substituted heteroaryl and unsubstituted heteroaryl.

[0019] In some non-restrictive examples, R D It can be represented by equation (EB-1): (EB-1) in: X Each of the following is independently one of: H, D, F, and CF3; a It is an integer between 0 and 6; and b It is an integer between 0 and 12; and a and b The sum of them is at least 1.

[0020] In some non-restrictive examples, R T It may contain at least one of the following: substituted alkyl, unsubstituted alkyl, branched fluoroalkyl, non-branched fluoroalkyl, substituted heterocyclic alkyl, unsubstituted heterocyclic alkyl, substituted alkoxy, unsubstituted alkoxy, branched siloxy, non-branched siloxy, branched fluoroalkoxy, non-branched fluoroalkoxy, fluoroaryl, polyfluorothioalkyl, and fluorocyclic alkyl.

[0021] In some non-restrictive examples,R T It may contain at least one of the following: F, H, CF2H, CF3, OCF3, CF2CF3, CF2CF2H, CH2CF2H and CH2CF3.

[0022] In some non-limiting examples, the first ligand portion and the second ligand portion may independently include at least one of the following: a fluoroalkyl portion and a fluoroaryl portion.

[0023] In some non-limiting examples, the first ligand portion can be represented by equation (FCM-1): (FCM-1) in: t It is an integer between 1 and 3; u It is an integer between 5 and 12; and Z It represents one of the following: H, D, and F.

[0024] In some non-limiting examples, the first ligand portion can be represented by equation (FCM-2): (FCM-2) in: v It is an integer between 1 and 3; w It is an integer between 3 and 15; and Z It represents one of the following: H, D, and F.

[0025] In some non-limiting examples, a mixed ligand compound may contain at least one of a first ligand moiety and a second ligand moiety.

[0026] In some non-limiting examples, the number of second ligand moieties in a mixed ligand compound may not exceed the number of first ligand moieties therein.

[0027] In some non-limiting examples, the number of F atoms in the first ligand portion and the second ligand portion may differ by no more than one of 2, 4, 6, 8, 9, 11, 13, 15, 16, 18, 20, 24 and 48.

[0028] In some non-limiting examples, the number of CF2 portions of the first ligand portion and the second ligand portion may differ by no more than one of 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11 and 22.

[0029] In some non-limiting examples, the number of C atoms in the first ligand portion and the second ligand portion may differ by no more than one of 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11 and 22.

[0030] In some non-limiting examples, the molar weights attributable to each of the first and second ligand portions may differ by no more than one of about 20 g / mol, 40 g / mol, 50 g / mol, 100 g / mol, 150 g / mol, 200 g / mol, 300 g / mol, 400 g / mol, 500 g / mol, 600 g / mol, 700 g / mol, 800 g / mol, 900 g / mol, and 1,100 g / mol.

[0031] In some non-limiting examples, the molar weights attributable to each of the first and second ligand portions may differ by no more than one of about 20 g / mol, 40 g / mol, 50 g / mol, 100 g / mol, 150 g / mol, 200 g / mol, 300 g / mol, 400 g / mol, 500 g / mol, 600 g / mol, 700 g / mol, 800 g / mol, 900 g / mol, and 1,100 g / mol.

[0032] In some non-limiting examples, the degree of fluorination of the first ligand portion and the second ligand portion may differ by no more than one of about 0.03, 0.09, 0.14, 0.18, 0.22, 0.28, 0.36, 0.56, 0.71, 0.78, 0.82, 0.99, 1.56, 1.64, 1.78, 1.85, 1.98, 2.34, 3.56, 3.64 and 3.70.

[0033] In some non-limiting examples, the device may include a composition comprising a plurality of compounds, wherein at least one of the plurality of compounds may be a mixed ligand compound, and the plurality of compounds may contain at least one common ligand moiety.

[0034] In some non-limiting examples, at least one of the multiple compounds may contain at least one first ligand moiety of the mixed ligand compound.

[0035] In some non-limiting examples, the number of first ligand moieties of at least one of the multiple compounds may be equal to the sum of the number of first ligand moieties and the number of second ligand moieties of the mixed ligand compound.

[0036] In some non-limiting examples, the ligand portion of at least one of the multiple compounds may be substantially composed of the first ligand portion.

[0037] In some non-limiting examples, the mixed ligand compound may contain a second ligand moiety, and the remaining ligand moiety of the mixed ligand compound may consist substantially of the first ligand moiety.

[0038] In some non-limiting examples, the majority of the composition may consist substantially of a mixture of ligand compounds, and the remainder of the composition may consist substantially of at least one of a plurality of compounds.

[0039] In some non-limiting examples, the mixed ligand compounds may comprise one of about 50%, 60%, 70%, 75%, 80%, 85%, 90%, 95%, 98%, and 99% of the composition.

[0040] In some non-limiting examples, a mixed ligand compound may contain a first ligand portion to a second ligand portion in a ratio of approximately 1:1, based on the number of ligand portions in such a compound.

[0041] In some non-limiting examples, at least one of the multiple compounds may contain a first ligand portion and a second ligand portion in a ratio of at least about 1:2, 2:1, 1:5 and 5:1, based on the number of ligand portions constituted by such compound.

[0042] In some non-limiting examples, the percentage of the mixed ligand compound in the composition may be the percentage of at least any other compound in the composition.

[0043] In some non-limiting examples, the difference in molar weight of each of the various compounds in the composition may not exceed one of about 4,300 g / mol, 4,000 g / mol, 3,700 g / mol, 3,500 g / mol, 3,100 g / mol, 2,800 g / mol, 2,400 g / mol, 2,200 g / mol, 1,800 g / mol, 1,400 g / mol, 1,200 g / mol, 900 g / mol, 800 g / mol, 700 g / mol, 600 g / mol, 500 g / mol, 400 g / mol, 300 g / mol, 200 g / mol, 100 g / mol, 40 g / mol, and 20 g / mol.

[0044] In some non-limiting examples, the polydispersity of the composition may be no more than one of about 2.08, 2.06, 2.04, 2.02 and 2.00.

[0045] In some non-limiting examples, the various compounds in the composition may each exhibit substantially the same vapor pressure.

[0046] In some non-limiting examples, at least one of the various compounds may comprise: a first ligand moiety comprising a fluoroalkyl moiety, and a second ligand moiety comprising at least one of the following: a substituted alkyl moiety, an unsubstituted alkyl moiety, a substituted fluoroalkyl moiety, an unsubstituted fluoroalkyl moiety, a substituted fluoroaryl moiety, an unsubstituted fluoroaryl moiety, a substituted aryl moiety, an unsubstituted aryl moiety, a substituted polycyclic aromatic moiety, an unsubstituted polycyclic aromatic moiety, a substituted binaphthyl moiety, an unsubstituted binaphthyl moiety, a substituted biphenyl moiety, an unsubstituted biphenyl moiety, a substituted adamantyl moiety, and an unsubstituted adamantyl moiety.

[0047] In some non-limiting examples, the core component of each of the multiple compounds may be the cyclophosphonitrile moiety.

[0048] In some non-limiting examples, the device may also include a patterned coating comprising a mixed ligand compound disposed on a first layer surface of a lower layer in a laterally oriented first portion; and a deposited layer of a deposited material deposited on a second portion; wherein the first portion may substantially lack a sealing coating of the deposited material.

[0049] In some non-limiting examples, patterned coatings can be adapted to reduce the initial adhesion probability of the vapor flux of the conductive deposited material.

[0050] In some non-limiting examples, the device may further include an emission region comprising: a substrate; a first electrode, a second electrode, and at least one semiconductor layer disposed between the first electrode and the second electrode; wherein the first electrode may be disposed between the substrate and the at least one semiconductor layer.

[0051] In some non-limiting examples, the first part may not include the lateral orientation of the launch area.

[0052] In some non-limiting examples, the second electrode may include at least a portion of the deposited layer as its layer.

[0053] In some non-limiting examples, the first part may include the lateral orientation of the launch area.

[0054] In some non-limiting examples, the device may also include an auxiliary electrode comprising a deposited layer as its layer.

[0055] According to a broad aspect, a composition comprising a plurality of compounds is disclosed, wherein each of the compounds may comprise a cyclophosphamide core moiety and at least one ligand moiety bonded to the cyclophosphamide core moiety, wherein the plurality of compounds may comprise at least one common ligand moiety.

[0056] In some non-limiting examples, at least one of a plurality of compounds may contain at least one of a plurality of first ligand moieties and second ligand moieties.

[0057] In some non-limiting examples, the composition may comprise a first compound having at least one first ligand portion and at least one second ligand portion, and a second compound having at least one first ligand portion of the first compound.

[0058] In some non-limiting examples, at least one compound of the composition may include a ligand moiety that is not present in another compound of the composition.

[0059] In some non-limiting examples, the number of first ligand moieties of the second compound may be equal to the sum of the number of first ligand moieties and the number of second ligand moieties of the first compound.

[0060] In some non-limiting examples, the number of second ligand moieties in at least one of the first and second compounds may not exceed the number of first ligand moieties therein.

[0061] In some non-limiting examples, the ligand portion of the first compound may consist essentially of a first ligand portion and a second ligand portion.

[0062] In some non-limiting examples, the ligand portion of the second compound may consist essentially of the first ligand portion.

[0063] In some non-limiting examples, the first compound may include a second ligand moiety, and the remainder of the ligand moiety of the first compound may consist substantially of the first ligand moiety.

[0064] In some non-limiting examples, the majority of the composition may consist essentially of the first compound, and the remainder of the composition may consist essentially of the second compound.

[0065] In some non-limiting examples, the first compound may constitute one of about 50%, 60%, 70%, 75%, 80%, 85%, 90%, 95%, 98%, and 99% of the composition.

[0066] In some non-limiting examples, each of the multiple compounds may have a first ligand portion and a second ligand portion.

[0067] In some non-limiting examples, the first compound may contain a first ligand portion to a second ligand portion in a ratio of approximately 1:1, based on the number of ligand portions in such a compound.

[0068] In some non-limiting examples, the composition may contain at least one additional compound comprising a first ligand portion and a second ligand portion in a ratio of about 1:2, 2:1, 1:5, and 5:1, based on the number of ligand portions constituted by such compound.

[0069] In some non-limiting examples, the percentage of the first compound in the composition may be the percentage of at least any other compound in the composition.

[0070] In some non-limiting examples, the difference in molar weight of each of the various compounds in the composition may not exceed one of about 4,300 g / mol, 4,000 g / mol, 3,700 g / mol, 3,500 g / mol, 3,100 g / mol, 2,800 g / mol, 2,400 g / mol, 2,200 g / mol, 1,800 g / mol, 1,400 g / mol, 1,200 g / mol, 900 g / mol, 800 g / mol, 700 g / mol, 600 g / mol, 500 g / mol, 400 g / mol, 300 g / mol, 200 g / mol, 100 g / mol, 40 g / mol, and 20 g / mol.

[0071] In some non-limiting examples, the polydispersity of the composition may be no more than one of about 2.08, 2.06, 2.04, 2.02 and 2.00.

[0072] In some non-limiting examples, the compounds in the composition may each exhibit substantially the same vapor pressure.

[0073] In some non-limiting examples, at least one ligand portion may include: a linker portion. R B End portion R T and arranged in the connecting base portion R B and end portion R T The middle part between R D .

[0074] In some non-restrictive examples, the connection base portion R B It may contain one of the following: O, N, S, substituted alkylene, unsubstituted alkylene, substituted fluoroalkylene, unsubstituted fluoroalkylene, substituted cycloalkylene, unsubstituted cycloalkylene, substituted arylene, unsubstituted arylene, substituted heteroarylene, and unsubstituted heteroarylene.

[0075] In some non-restrictive examples, the end portion R T It can be one of the following: CF3, CF2CF2, CH2CF2H, and CF2H.

[0076] In some non-limiting examples, at least one ligand moiety may comprise at least one of a fluoroalkyl moiety and a fluoroaryl moiety.

[0077] In some non-limiting examples, the first ligand portion and the second ligand portion may contain the F portion.

[0078] In some non-limiting examples, the second ligand moiety may be substantially free of fluorinated sp. 2 C atom.

[0079] In some non-limiting examples, the second ligand portion may be substantially fluorine-free.

[0080] In some non-limiting examples, at least one of the various compounds may comprise: a first ligand moiety that may comprise a fluoroalkyl moiety, and a second ligand moiety comprising at least one of the following: a substituted alkyl moiety, an unsubstituted alkyl moiety, a substituted fluoroalkyl moiety, an unsubstituted fluoroalkyl moiety, a substituted fluoroaryl moiety, an unsubstituted fluoroaryl moiety, a substituted aryl moiety, an unsubstituted aryl moiety, a substituted polycyclic aromatic moiety, an unsubstituted polycyclic aromatic moiety, a substituted binaphthyl moiety, an unsubstituted binaphthyl moiety, a substituted biphenyl moiety, an unsubstituted biphenyl moiety, a substituted adamantyl moiety, and an unsubstituted adamantyl moiety.

[0081] In some non-limiting examples, the second ligand portion may contain no more F atoms than the first ligand portion.

[0082] In some non-limiting examples, the second ligand portion may have a degree of fluorination not exceeding that of the first ligand portion.

[0083] In some non-limiting examples, the number of F atoms in the first ligand portion and the second ligand portion may differ by no more than one of 2, 4, 6, 8, 9, 11, 13, 15, 16, 18, 20, 24 and 48.

[0084] In some non-limiting examples, the number of CF2 portions of the first ligand portion and the second ligand portion may differ by no more than one of 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11 and 22.

[0085] In some non-limiting examples, the number of C atoms in the first ligand portion and the second ligand portion may differ by no more than one of 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11 and 22.

[0086] In some non-limiting examples, the molar weights attributable to each of the first and second ligand portions may differ by no more than one of about 20 g / mol, 40 g / mol, 50 g / mol, 100 g / mol, 150 g / mol, 200 g / mol, 300 g / mol, 400 g / mol, 500 g / mol, 600 g / mol, 700 g / mol, 800 g / mol, 900 g / mol, and 1,100 g / mol.

[0087] In some non-limiting examples, the degree of fluorination of the first ligand portion and the second ligand portion may differ by no more than one of about 0.03, 0.09, 0.14, 0.18, 0.22, 0.28, 0.36, 0.56, 0.71, 0.78, 0.82, 0.99, 1.56, 1.64, 1.78, 1.85, 1.98, 2.34, 3.56, 3.64 and 3.70.

[0088] In some non-limiting examples, the cyclophosphonitrile core portion may be either a cyclic triphosphonitrile portion or a cyclic tetraphosphonitrile portion.

[0089] In a broader sense, a device comprising a composition is disclosed. Attached Figure Description

[0090] Examples of this disclosure will now be described with reference to the following figures, wherein the same reference numerals in the different figures indicate at least one of the following: the same elements and, in some non-limiting examples, similar elements and corresponding elements, and wherein: Figure 1 The following is a simplified block diagram of an example device in the longitudinal orientation according to the example in this disclosure, which has multiple layers in the lateral orientation, the layers being formed by selectively depositing a patterned coating in a first portion of the lateral orientation and subsequently depositing a closed coating of deposited material in a second portion thereof; Figure 2 Based on the examples in this disclosure Figure 1 A simplified diagram of an example type of device viewed longitudinally, in which a closed coating of deposited material in the second part forms the second electrode of the optoelectronic device; Figure 3 This is a schematic diagram showing an example cross-sectional view of an example display panel according to an example of the present disclosure, the example display panel having multiple layers, the multiple layers including at least one hole through which at least one electromagnetic signal can be exchanged; Figure 4 This illustrates an example of a method for use in accordance with this disclosure. Figure 1A schematic diagram illustrating an example process of depositing a patterned coating on the exposed surface of the lower layer in an example type of device; Figure 5 It is shown that it is used in including Figure 3 A schematic diagram of an example process of depositing deposition material in a second portion of the exposed layer surface of a patterned coating, wherein the patterned coating is a nucleation inhibition coating (NIC). Figure 6A It is shown in sectional view Figure 1 A schematic diagram of an example type of device; Figure 6B This is shown in the supplementary floor plan. Figure 6A Schematic diagram of the device; Figures 7A to 7B This is a schematic diagram illustrating various potential behaviors of a patterned coating according to various examples of the present disclosure, the patterned coating being located in Figure 1 The deposition interface with the deposited layer in an exemplary type of device; Figures 8A to 8H Based on the examples in this disclosure Figure 1 A simplified block diagram of an exemplary type of the device, viewed from a cross-sectional perspective, illustrates various examples of possible interactions between the granular patterned coating and the granular structure. Figure 9 It is a schematic diagram illustrating an example according to this disclosure. Figure 2 Example cross-sectional view of the device type, and additional example deposition steps; Figure 10 This is a schematic diagram illustrating an example stage of an example process for manufacturing an OLED device according to an example of an example type of example according to the examples in this disclosure, the example type having sub-pixel regions having a second electrode of another thickness; Figure 11 This is a schematic diagram showing an example cross-sectional view of an example type of OLED device according to an example of the present disclosure, wherein the second electrode is coupled to the auxiliary electrode; Figure 12 This is a schematic diagram showing an example cross-sectional view of an example type of OLED device according to the examples in this disclosure, which has separators and shaded areas, such as recesses, in its non-emitting region; Figures 13A to 13B This is a schematic diagram illustrating an exemplary cross-sectional view of an exemplary OLED device having separators and shaded areas (such as holes) in a non-emitting region according to various examples in this disclosure; Figure 14 This illustrates an example energy distribution of the energy states of surface-adsorbed atoms adsorbed onto a surface according to an example in this disclosure; Figure 15This is a schematic diagram illustrating the formation of a membrane core according to an example in this disclosure; and Figure 16 It is a block diagram of an example computer device within a computing and communication environment that can be used to implement devices and methods according to representative examples of this disclosure.

[0091] In this disclosure, some elements / features may be identified by reference numerals that may not be shown in any of the accompanying drawings provided herein.

[0092] In this disclosure, an icon symbol appended with at least one of at least a numerical value (including, but not limited to, at least one of a superscript and a subscript) and at least one letter character (including, but not limited to, in lowercase) can be considered to refer to at least one specific instance and subset of the feature (element) described by the icon symbol. As indicated by the context, indexing an icon symbol without indexing at least one of the appended value and the character can generally refer to the feature described by the icon symbol and at least one of the set of all instances described by it. Similarly, an icon symbol can use the letter "x" to replace a number. As indicated by the context, indexing such an icon symbol can generally refer to the feature described by the icon symbol, wherein the character "x" is replaced by a number and the set of all instances described by it.

[0093] In this disclosure, specific details, including but not limited to particular architectures, interfaces, and techniques, are set forth for illustrative purposes and not for limitation in order to provide a thorough understanding of the disclosure. In some instances, detailed descriptions of well-known systems, technologies, components, devices, circuits, methods, and applications have been omitted to avoid unnecessary detail that could obscure the description of this disclosure.

[0094] Furthermore, it should be understood that the block diagrams reproduced herein may represent conceptual views of exemplary components embodying the principles of this technology.

[0095] Therefore, system and method components have been appropriately indicated in the accompanying drawings using conventional symbols, with only those specific details shown that are relevant to understanding the examples of this disclosure, so that this disclosure will not be obscured by details that are obvious to those skilled in the art who will benefit from the description herein.

[0096] Any of the accompanying drawings provided herein may not be drawn to scale and may not be considered as limiting this disclosure in any way.

[0097] In some examples, any features shown in dashed outlines may be considered optional. Detailed Implementation

[0098] Layered devices This disclosure relates generally to a layered semiconductor device 100, and more specifically to an optoelectronic device 200. The optoelectronic device 200 may generally encompass any device 100 that converts electrical signals into light in the form of photons and performs the reverse conversion. In some non-limiting examples, the optoelectronic device 200 may include an organic light-emitting diode (OLED).

[0099] Those skilled in the art will understand that while this disclosure relates to optoelectronic device 200, its principles can be applied, in some non-limiting examples, to any panel having multiple layers, including but not limited to at least one layer of conductive deposited material 531, which is included as a thin film, and in some non-limiting examples, electromagnetic (EM) signals can partially and completely pass through (including but not limited to) one of the multiple layers at a non-zero angle relative to the plane of at least one of these layers.

[0100] Now go to Figure 1 This figure may show a cross-sectional view of an example layered semiconductor device 100. In some non-limiting examples, such as Figure 2 As shown in more detail below, device 100 may include multiple layers deposited on substrate 10.

[0101] A first lateral axis, designated as the X-axis, may be shown together with a longitudinal axis, designated as the Z-axis. A second lateral axis, designated as the Y-axis, may be shown substantially transverse to both the X-axis and the Z-axis. At least one of the lateral axes may define the lateral orientation of the device 100. The longitudinal axis may define the longitudinal orientation of the device 100.

[0102] The layer of device 100 may extend in a lateral orientation substantially parallel to the plane defined by the lateral axis. Those skilled in the art will understand that, in some non-limiting examples, Figure 1 The representation of a substantially flat surface shown may be an abstract concept for illustrative purposes. In some non-limiting examples, there may be localized substantially flat layers of varying thicknesses and sizes in the lateral extent of device 100, and in some non-limiting examples, at least one substantially non-existent layer separated by uneven transition regions (including lateral gaps and even interruptions).

[0103] Therefore, although for illustrative purposes, device 100 may be shown as a substantially layered structure of substantially parallel planar layers in its longitudinal orientation, such device 100 may locally show different morphologies to define features, each of which may substantially exhibit the layered profile in the longitudinal orientation.

[0104] In some non-limiting examples, the lateral orientation of the exposed layer surface 11 of device 100 may include a first portion 101 and a second portion 102. In some non-limiting examples, the second portion 102 may include a portion of the exposed layer surface 11 of device 100 located outside the first portion 101. Figure 1 As shown, the layer of device 100 may include a substrate 10 and a patterned coating 110 disposed on at least a portion of the exposed layer surface 11 in its laterally oriented direction. In some non-limiting examples, the patterned coating 110 may be confined in a first portion 101 in its lateral range, and the deposited layer 130 may be disposed as a sealing coating 140 on the exposed layer surface 11 of device 100 in a second portion 102 in its laterally oriented direction.

[0105] In some non-limiting examples, at least one particulate structure 150 may be disposed as a discontinuous layer 160 on the exposed surface 11 of the patterned coating 110. In some non-limiting examples, although not shown, at least one of the patterned coating 110, the deposited layer 130, and at least one particulate structure 150 may be deposited on a layer other than the substrate 10 (lower layer 710), including but not limited to an intermediary layer between the substrate 10 and at least one of the patterned coating 110, the deposited layer 130, and at least one particulate structure 150. In some non-limiting examples, the lower layer 710 may include at least one of an alignment layer and an organic support layer.

[0106] In some non-limiting examples, at least one of the patterned coating 110, the deposited layer 130, and at least one particulate structure 150 may be covered by at least one overlay 170.

[0107] In some non-limiting examples, such an overlay 170 may include at least one of an encapsulation layer and an optical coating. In some non-limiting examples, the encapsulation layer may include at least one of a glass cover, a barrier film, a barrier adhesive, a barrier coating, an encapsulation layer, and a thin-film encapsulation (TFE) layer provided to encapsulate device 100. In some non-limiting examples, the optical coating may include at least one of optical and structural coatings and at least one component thereof, including but not limited to polarizers, color filters, anti-reflective coatings, anti-glare coatings, cover glass, and optically clear adhesives (OCAs).

[0108] In some non-limiting examples, at least one of the substantially thin patterned coating 110 in the first portion 101 and the deposited layer 130 in the second portion 102 may provide a substantially flat surface on which the overcoat 170 may be deposited. In some non-limiting examples, providing such a substantially flat surface for coating such an overcoat 170 may increase its adhesion to such surfaces.

[0109] In some non-limiting examples, the optical coating can be used to modulate the optical properties of light transmitted, emitted, and absorbed by the device 100, including but not limited to plasmon modes. In some non-limiting examples, the optical coating can be used as at least one of an optical filter, a refractive index matching coating, an optical external coupling coating, a scattering layer, a diffraction grating, and portions thereof.

[0110] In some non-limiting examples, the optical coating can be used to modulate at least one optical microcavity effect in device 100 by adjusting, but not limited to, at least one of the total optical path length and its refractive index. At least one optical property of device 100 can be affected by adjusting at least one optical microcavity effect (including, but not limited to, output light) (including, but not limited to, at least one of its intensity angular dependence and its wavelength shift). In some non-limiting examples, the optical coating may be a non-electric component, i.e., the optical coating may not be configured to conduct and transmit at least one of current during normal device operation.

[0111] In some non-limiting examples, the optical coating may be formed of any deposited material 531, and in some non-limiting examples, any mechanism for depositing the deposited layer 130 as described herein may be employed.

[0112] Patterning In some non-restrictive examples, see reference. Figure 1 In some non-limiting examples, the patterned coating 110 containing patterned material 411 (which may be nucleation inhibition coating (NIC) material in some non-limiting examples) may be disposed as a sealing coating 140 on the exposed layer surface 11 of the lower layer 710 (including but not limited to the substrate 10) of the device 100. In some non-limiting examples, the lateral extent is limited by selective deposition (including but not limited to the use of a shadow mask 415, such as but not limited to a fine metal mask (FMM), including but not limited to the first portion 101).

[0113] Therefore, in some non-limiting examples, in the second part 102 of device 100, the exposed surface 11 of the lower layer 710 of device 100 may be substantially without the closed coating 140 of the patterned coating 110.

[0114] Patterned coating The patterned coating 110 may include a patterned material 411. In some non-limiting examples, the patterned coating 110 may include a closed coating 140 of the patterned material 411.

[0115] The patterned coating 110 provides an exposed layer surface 11 having a substantially low tendency for deposition of the deposited material 531 to be deposited on the exposed layer surface after such surface is exposed to a vapor flux 532 of the deposited material 531. This includes, but is not limited to, a substantially low initial adhesion probability (in some non-limiting examples, under the conditions confirmed in the dual QCM technique described by Walker et al.). In some non-limiting examples, this substantially low tendency may significantly exceed the tendency for deposition of the deposited material 531 to be deposited on the exposed layer surface 11 of the lower layer 710 of the device 100 (on which the patterned coating 110 has been deposited).

[0116] Due to the properties of the patterned coating 110 and the patterned material 411 for the deposition of the deposited material 531 (including, but not limited to, low initial adhesion probability) (in some non-limiting examples, when deposited as at least one of some form of film and coating and in an environment similar to the deposition of the patterned coating 110 within the device 100), the exposed surface 11 of the first portion 101 of the patterned coating 110 may be substantially free of the sealing coating 140 of the deposited material 531.

[0117] However, in some non-limiting examples, exposing device 100 to a vapor flux 532 of deposited material 531 can result in the formation of a closed coating 140 of deposited layer 130 of deposited material 531 in the second portion 102, wherein the exposed surface 11 of the lower layer 710 may be substantially unpatterned coating 110.

[0118] Therefore, in some non-limiting examples, the patterned coating 110 may be a NIC that provides high deposition (patterning) contrast relative to subsequent deposition of the deposited material 531, such that in some non-limiting examples the deposited material 531 does not tend to deposit as a closed coating 140, in which the patterned coating 110 has already been deposited.

[0119] In some non-limiting examples, the patterned coating 110 may comprise a patterned material 411. In some non-limiting examples, the patterned material 411 may comprise a NIC material. In some non-limiting examples, the patterned coating 110 may comprise a closed coating 140 of the patterned material 411.

[0120] In some non-limiting examples, there may be scenarios where a patterned coating 110 is required to induce the formation of at least one discontinuous layer 160 of particulate structure 150 when the patterned coating 110 in the first portion 101 is subjected to a vapor flux 532 of the deposited material 531. In at least some applications, the properties of the patterned coating 110 may allow a closed coating 140 of the deposited material 531 to be formed in a second portion 102, which may be substantially free of the patterned coating 110, while a discontinuous layer 160 of at least one particulate structure 150 having only at least one characteristic may be formed on the patterned coating 110 in the first portion 101.

[0121] For the purpose of simplifying the discussion, in this disclosure, the patterned coating 110 may be designated as a particulate structure patterned coating 110, with regard to the deposition of the patterned coating 110 to serve as a substrate for depositing at least one particulate structure 150 thereon. p In contrast, with regard to the fact that the patterned coating 110 is deposited in the first portion 101 to substantially prevent the formation of the sealing coating 140 of the deposited layer 130 in such the first portion 101, thereby confining the deposition of the sealing coating 140 of the deposited layer 130 to the second portion 102, this patterned coating 110 can be designated as a non-particulate patterned coating 110. n Those skilled in the art will understand that, in some non-limiting examples, the patterned coating 110 can serve as a granular structure patterned coating 110. p Non-particulate patterned coating 110 n Both.

[0122] In some non-limiting examples, the following scenario may exist: a discontinuous layer 160 of at least one particulate structure 150 of the deposited material 531 needs to be formed in the second part 102 (in some non-limiting examples, the deposited material may be one of metals and metal alloys (metal / alloy), including but not limited to at least one of ytterbium (Yb), silver (Ag), magnesium (Mg) and Ag-containing materials (including but not limited to MgAg), while depositing a closed coating 140 of the deposited material 531 having a thickness not limited to one of about 100 nm, 75 nm, 50 nm, 25 nm and 15 nm. In some non-limiting examples, the amount of deposited material 531 deposited in the first portion 101 as a discontinuous layer 160 of at least one particulate structure 150 may correspond to one of about 1%-50%, 2%-25%, 5%-20% and 7%-10% of the amount of deposited material 531 deposited in the second portion 102 as a sealing coating 140. As a non-limiting example, the sealing coating may correspond to a thickness not exceeding at least one of about 100 nm, 75 nm, 50 nm, 25 nm and 15 nm.

[0123] In some non-limiting examples, the patterned coating 110 may be patterned, the pattern being defined by at least one area of ​​a closed coating 140 in which there may be substantially no patterned coating 110.

[0124] In some non-limiting examples, the at least one region may separate the patterned coating 110 into a plurality of discrete segments. In some non-limiting examples, the plurality of discrete segments of the patterned coating 110 may be physically spaced apart from each other in their lateral orientation. In some non-limiting examples, the plurality of discrete segments of the patterned coating 110 may be arranged in a regular structure (including, but not limited to, an array (matrix)) such that, in some non-limiting examples, the discrete segments of the patterned coating 110 may repeat a pattern construction.

[0125] In some non-limiting examples, at least one of these discrete segments of the patterned coating 110 may each correspond to an emission region 210. In some non-limiting examples, the aperture ratio of the emission region 410 may be no more than one of about 50%, 40%, 30%, and 20%.

[0126] In some non-limiting examples, the patterned coating 110 may be formed as a single monolithic coating.

[0127] Properties of patterned coatings / materials composition In some non-limiting examples, a mixed ligand compound may be provided, comprising a core moiety, a first ligand moiety, and a second ligand moiety, the first ligand moiety and the second ligand moiety being respectively bonded to the core moiety.

[0128] In some non-limiting examples, a layered semiconductor device 100 comprising a mixed ligand compound may be provided. In some non-limiting examples, the mixed ligand compound may comprise a core portion, a first ligand portion, and a second ligand portion. In some non-limiting examples, the first ligand portion and the second ligand portion may each be bonded to the core portion.

[0129] In some non-limiting examples, a layered semiconductor device 100 comprising a composition containing multiple compounds may be provided. In some non-limiting examples, at least one of the multiple compounds may be a mixed ligand compound. In some non-limiting examples, each of the multiple compounds may contain a core portion and multiple ligand portions bonded to the core portion. In some non-limiting examples, the multiple compounds may contain at least one common ligand portion. In some non-limiting examples, at least one of the multiple compounds may contain at least one of multiple first ligand portions and second ligand portions. In some non-limiting examples, each of the multiple compounds may contain a core portion, a first ligand portion, and a second ligand portion. In some non-limiting examples, the first ligand portion and the second ligand portion may each be bonded to the core portion.

[0130] In some non-limiting examples, compositions comprising multiple compounds may be provided. In some non-limiting examples, each of the multiple compounds may comprise a cyclophosphamide core moiety and at least one ligand moiety bonded to the cyclophosphamide core moiety. In some non-limiting examples, the multiple compounds may comprise at least one common ligand moiety.

[0131] ligand portion As used in this article, the term "ligand moiety" can be understood to generally refer to at least one of the first ligand moiety and the second ligand moiety.

[0132] In some non-limiting examples, the ligand moiety may independently include at least one of the following: F, chlorine (Cl), hydroxyl group, substituted alkyl group, unsubstituted alkyl group, substituted fluoroalkyl group, unsubstituted fluoroalkyl group, substituted cycloalkyl group, unsubstituted cycloalkyl group, substituted fluorocycloalkyl group, unsubstituted fluorocycloalkyl group, substituted heterocycloalkyl group, unsubstituted heterocycloalkyl group, substituted fluoroheterocycloalkyl group, unsubstituted fluoroheterocycloalkyl group, unsubstituted fluorocycloalkyl group, substituted alkoxy group, unsubstituted alkoxy group, substituted fluoroalkoxy group, unsubstituted fluoroalkoxy group, substituted aryloxy group, unsubstituted aryloxy group, substituted fluoroaryloxy group, unsubstituted Fluoroaryloxy groups, substituted heteroaryloxy groups, unsubstituted heteroaryloxy groups, substituted fluoroaryloxy groups, unsubstituted fluoroaryloxy groups, substituted aryl groups, unsubstituted aryl groups, substituted fluoroaryl groups, unsubstituted fluoroaryl groups, substituted alkylsilyl groups, unsubstituted alkylsilyl groups, substituted alkylsiloxy groups, unsubstituted alkylsiloxy groups, amino groups, amine groups, alkylamine groups, arylamine groups, nitrile groups, azophosphatidyl groups, thioalkyl groups, pentafluorothioalkyl groups, thioether groups, sulfonyl groups, thiol groups, alkylthioyl groups, trifluoromethylthioyl groups, carbonyl groups, siloxane groups, silyl groups, and organosilicon groups.

[0133] In some non-limiting examples, at least one ligand portion, including but not limited to at least one of a first ligand portion and a second ligand portion, may be an F-containing portion. In some non-limiting examples, the first ligand portion may be an F-containing portion, and the second ligand portion may be substantially F-free. In some non-limiting examples, both the first ligand portion and the second ligand portion may be F-containing portions.

[0134] In some non-limiting examples, at least one ligand moiety may comprise a main chain and at least one F atom attached thereto. In some non-limiting examples, the main chain may be a C-containing main chain. In some non-limiting examples, the main chain may comprise heteroatoms, including but not limited to silicon (Si).

[0135] In some non-limiting examples, the ligand portion may include: a linker portion R B End portion R T and arranged in the connecting base portion R B and end portion R T The middle part between R D .

[0136] In some non-limiting examples, the ligand moiety can be represented by chemical formula (E-1): (E-1) in: * Indicates the attachment points within the compound. R B Indicates the connecting base portion. R D Indicates the middle part, and R T Indicates the end portion.

[0137] In some non-limiting examples, the ligand portion may include a branched portion. R E In some non-limiting examples, this ligand moiety may comprise one of the chemical formulas (E-2)-(E-4):

[0138] In some non-limiting examples, the ligand portion may contain at least one saturated bond. In some non-limiting examples, the bonds in the ligand portion may be substantially saturated bonds, such that the ligand portion may be a saturated portion. In some non-limiting examples, at least one portion of the ligand portion, including but not limited to… R B , R D , R T and R E At least one of the ligand portions can be saturated. In some non-limiting examples, the ligand portion can contain unsaturated bonds. In some non-limiting examples, the bonds in the ligand portion can be substantially unsaturated, such that the ligand portion can be unsaturated. In some non-limiting examples, at least one portion of the ligand portion, including but not limited to... R B , R D , R T and R E At least one of them can be an unsaturated part.

[0139] In some non-limiting examples, the ligand moiety may contain no more than one of about 4, 3, 2, and 1 ether units. Without wishing to be bound by any particular theory, it may be assumed that the presence of multiple ether units within a single ligand moiety (which can lower the melting point of the compound) may have reduced applicability in some cases.

[0140] In some non-restrictive examples, the connection base portion R B This can correspond to the terminal portion of the ligand portion, which may be close to the core portion and may contain atoms that attach the ligand portion to the core portion. In some non-limiting examples, R B It may contain one of the following: O, N, S, substituted alkylene, unsubstituted alkylene, substituted fluoroalkylene, unsubstituted fluoroalkylene, substituted cycloalkylene, unsubstituted cycloalkylene, substituted arylene, unsubstituted arylene, substituted heteroarylene, and unsubstituted heteroarylene. In some non-limiting examples, R B It can contain P=N And one of the phosphazene group. In some non-limiting examples, R B It may contain at least one of fluoromethylene and difluoromethylene. In some non-limiting examples, R B It can be selected from: -O- and -O-CH2-.

[0141] In some non-restrictive examples, the middle part R D This typically corresponds to the portion where the ligand portion is arranged between the connective base portion and the terminal portion. In some non-limiting examples, R D It may contain: O, ether, substituted alkylene, unsubstituted alkylene, substituted fluoroalkylene, unsubstituted fluoroalkylene, substituted cycloalkylene, unsubstituted cycloalkylene, substituted aryl, unsubstituted aryl, substituted phenyl, unsubstituted phenyl, substituted biphenyl, unsubstituted biphenyl, substituted dialynyl, unsubstituted dialynyl, substituted heteroaryl, and unsubstituted heteroaryl. In some non-limiting examples, R D It may contain F. In some non-restrictive examples, R D It may contain fluoroalkyl units. In some non-limiting examples, R D It may contain at least one of CF2 units, CFH units, and CH2 units. In some non-limiting examples, R D It may comprise multiple CF2 units bonded together to form a fluorinated alkyl group and one thereof. In some non-limiting examples, R D It may contain at least one CH2 unit and at least one CF2 unit. In some non-limiting examples, RD It may contain ether units. In some non-limiting examples, R D It can contain saturated bonds. In some non-restrictive examples, R D It can contain virtually no unsaturated bonds. In some non-restrictive examples, R D It can contain unsaturated bonds. In some non-restrictive examples, R D It may contain no more than one of approximately 25, 15, 13, 12, and 10 C atoms.

[0142] In some non-restrictive examples, the end portion R T This can correspond to the terminal portion of the ligand portion, including but not limited to the distal portion of the ligand portion relative to the core portion. In some non-limiting examples, the terminal portion can correspond to the terminal portion of the ligand portion opposite the connective tissue portion. In some non-limiting examples where the ligand portion includes a ring-shaped intermediate portion, R T It may include portions with ring atoms attached to the middle portion. In some non-limiting examples, R T It may contain F. In some non-restrictive examples, R T It may contain hydrogen (H). In some non-limiting examples, R T It may contain Si. In some non-limiting examples, R T It may contain at least one of the following: substituted alkyl, unsubstituted alkyl, branched fluoroalkyl, non-branched fluoroalkyl, substituted heterocyclic alkyl, unsubstituted heterocyclic alkyl, substituted alkoxy, unsubstituted alkoxy, branched silanoxy, non-branched silanoxy, branched fluoroalkoxy, non-branched fluoroalkoxy, fluoroaryl, polyfluorosulfide, and fluorocycloalkyl. In some non-limiting examples, R T It can be at least one of the following: F, H, CF2H, CF3, OCF3, CF2CF3, CF2CF2H, CH2CF2H, and CH2CF3. In some non-limiting examples, R T It may contain no more than one of approximately 8, 6, 5, 3, 2, and 1 C atoms.

[0143] Branch section R E This typically corresponds to a portion of the ligand moiety, from which multiple branches of the main chain can extend. In some non-limiting examples,R E It can act as a branch point in the main chain. In some non-limiting examples, branching can be achieved by binding at least three other parts forming the ligand moiety to... R E And it happens. In some non-restricted examples, R E It allows for various configurations (positions) of the ligand portion and can bond to at least one of the following: R B , R D and R T In some non-restrictive examples, the bond is to R E At least three parts can be one of the following: R B , R D and R T ; R B , R B and R B ; R D , R D and R D ;as well as R T , R T and R T In some non-restrictive examples, R E It can be bonded to at least one of the following: multiple R D and multiple R T The ligand portion comprises multiple components: R D and R T At least one of them. In some non-restrictive examples, R E It may contain at least one of the following: O, N, S, amine, substituted alkylene, unsubstituted alkylene, substituted fluoroalkylene, unsubstituted fluoroalkylene, substituted cycloalkylene, unsubstituted cycloalkylene, substituted heteroalkylene, unsubstituted heteroalkylene, substituted aryl, unsubstituted aryl, substituted heteroalkylene, and unsubstituted heteroalkylene. In some non-limiting examples, RE It may contain no more than one of about 8, 6, 5, 3, 2, and 1 C atoms. In some non-limiting examples, R E It can be essentially free of carbon atoms.

[0144] In some non-limiting examples, the chemical formula (E-1) R B It can be represented by one of the chemical formulas (EA-1)-(EA-6):

[0145] In the chemical formula (EA-2), R H It is one of the following: H, deuterated (D), CF3, and containing R D and R T The second ligand portion of both.

[0146] In some non-restrictive examples, the end portion R T It can bond to the middle part of the second ligand portion. R D .

[0147] In some non-limiting examples, the second ligand moiety can be represented by chemical formula (ED-1): (ED-1) In some non-limiting examples, the second ligand portion of chemical formula (ED-1) R D and R T In terms of molecular structure, it can interact with the ligand portion of chemical formula (E-1). R D and R T The same. In some non-limiting examples, the second ligand portion of chemical formula (ED-1) is... R D and R T At least one of them may be different from those of the ligand moiety in chemical formula (E-1). In some non-limiting examples, the ligand moiety in relation to chemical formula (E-1) provided herein is... R D and R T The description of various non-limiting examples can be applied to the secondary ligand portion of chemical formula (ED-1). R D andR T .

[0148] In some non-limiting examples, the chemical formula (E-1) R D It can be represented by the chemical formula (EB-1): (EB-1) in: X Each of the following is independently one of: H, D, F, and CF3; a It is an integer between 0 and 6; and b It is an integer between 0 and 12; and a and b The sum of them is at least 1.

[0149] In some non-restrictive examples, a and b The sum can not exceed one of approximately 15, 12, 10, and 9.

[0150] In some non-limiting examples, based on chemical formula (EB-1) R D It may include at least one of the chemical formulas (EB-10) to (EB-21):

[0151] In some non-restrictive examples, a It can be an integer between 1 and 4. b It can be an integer between 4 and 9, and a and b The sum can be an integer between 6 and 13.

[0152] In some non-restrictive examples, a It can be an integer between 2 and 4. b It can be an integer between 5 and 9, and a and b The sum can be an integer between 7 and 13.

[0153] In some non-limiting examples, the chemical formula (E-1) R T It can be represented by one of the chemical formulas (EC-1) to (EC-11):

[0154] In some non-limiting examples, the ligand moiety may comprise a C-containing backbone in a closed-ring configuration. In some non-limiting examples, to form a cyclic structure, it may comprise at least one of the following: fluorocycloalkyl (including but not limited to perfluorocyclopentyl and perfluorocyclohexyl), aryl (including but not limited to phenyl and naphthyl), and biaryl (including but not limited to biphenyl and naphthyl).

[0155] In some non-limiting examples, the ligand moiety may comprise a C-containing main chain in a closed cage configuration, including but not limited to adamantyl groups.

[0156] In some non-limiting examples, the ligand moiety may include an F-containing moiety, including but not limited to fluoroalkyl and fluoroaryl moieties.

[0157] Those skilled in the art will understand that, in some non-limiting examples, R B , R D , R E and R T Various descriptions can be applied to some non-limiting examples of the ligand moiety, including but not limited to those with chemical formulas (E-2) to (E-4). In some non-limiting examples, the ligand moiety comprises multiple given moieties, including but not limited to at least one of the following: multiple R B Multiple R D Multiple R E and multiple R T Each of these parts can be selected independently of the others.

[0158] In some non-limiting examples, the compound may contain a ligand moiety selected from one of the chemical formulas (F-1) to (F-314):

[0159] In each of the chemical formulas (F-1) to (F-314): * This indicates the attachment point to the core part.

[0160] First ligand portion and second ligand portion In some non-limiting examples, a mixed ligand compound may contain at least one of a first ligand moiety and a second ligand moiety.

[0161] In some non-limiting examples, each of the first and second ligand portions may include a low surface tension portion. In some non-limiting examples, each of the first and second ligand portions may include an F-containing portion.

[0162] In some non-limiting examples, the number of second ligand moieties in a compound may not exceed the number of first ligand moieties therein.

[0163] In some non-limiting examples, the compound may contain multiple first ligand moieties and a single second ligand moieties.

[0164] In some non-limiting examples, at least one of the first ligand portion and the second ligand portion may be an F-containing portion. In some non-limiting examples, one of the first ligand portion and the second ligand portion may be an F-containing portion, while the other of the first ligand portion and the second ligand portion may be a substantially F-free portion, including but not limited to one of the following: H, Cl, hydroxyl portion, alkyl portion, cycloalkyl portion, alkoxy portion, aryloxy portion, aryl portion, heteroaryloxy portion, alkylsilyl portion, alkylsiloxy portion, amino portion, amine portion, alkylamine portion, arylamine portion, cyano portion, azophosphatidyl group portion, siloxane portion, silane portion, and organosilicon portion.

[0165] In some non-limiting examples, the first ligand portion and the second ligand portion may be F-containing portions. In some non-limiting examples, the first ligand portion and the second ligand portion may each contain fluorocarbon units. In some non-limiting examples, the first ligand portion and the second ligand portion may each contain different numbers of fluorocarbon units.

[0166] In some non-limiting examples, one of the first ligand portion and the second ligand portion may contain a fluorocarbon unit, which may not be present in the other of the second ligand portion and the first ligand portion. In some non-limiting examples, the terminal portion of the first ligand portion may be different from the terminal portion of the second ligand portion. In some non-limiting examples, the terminal portion of the first ligand portion may contain CF3, and the terminal portion of the second ligand portion may contain CF2H.

[0167] In some non-limiting examples, the second ligand moiety may be substantially free of fluorinated sp. 2 C atom. In some non-limiting examples, the second ligand moiety may be substantially fluorine-free.

[0168] In some non-limiting examples, the mixed ligand compound may comprise: a first ligand portion comprising a fluoroalkyl moiety, and a second ligand portion comprising at least one of the following: a substituted alkyl moiety, an unsubstituted alkyl moiety, a substituted fluoroalkyl moiety, an unsubstituted fluoroalkyl moiety, a substituted fluoroaryl moiety, an unsubstituted fluoroaryl moiety, a substituted aryl moiety, an unsubstituted aryl moiety, a substituted polycyclic aromatic moiety, an unsubstituted polycyclic aromatic moiety, a substituted binaphthyl moiety, an unsubstituted binaphthyl moiety, a substituted biphenyl moiety, an unsubstituted biphenyl moiety, a substituted adamantyl moiety, and an unsubstituted adamantyl moiety.

[0169] In some non-limiting examples, the second ligand moiety may have an F content not exceeding that of the first ligand moiety. In some non-limiting examples, the second ligand moiety may contain no more F atoms than the first ligand moiety. In some non-limiting examples, the second ligand moiety may have a degree of fluorination not exceeding that of the first ligand moiety. In some non-limiting examples, the second ligand moiety may contain no more fluorocarbon units than the first ligand moiety. In some non-limiting examples, the second ligand moiety may contain no more carbon atoms than the first ligand moiety.

[0170] In some non-limiting examples, the first ligand portion may comprise a first fluoroalkyl portion, and the second ligand portion may comprise a second fluoroalkyl portion. In some non-limiting examples, the first fluoroalkyl portion may comprise a different number of carbon atoms than the second fluoroalkyl portion. In some non-limiting examples, the number of carbon atoms in the first and second ligand portions may differ by one of 1, 2, 3, and 4. In some non-limiting examples, the number of carbon atoms in the first and second ligand portions may differ by approximately one of 2-7, 2-6, 2-5, and 3-5.

[0171] In some non-limiting examples, the first ligand portion and the second ligand portion may contain different numbers of F atoms. In some non-limiting examples, the number of F atoms in the first ligand portion and the second ligand portion may differ by no more than one of about 2, 4, 6, 8, 9, 11, 13, 15, 16, 18, 20, 24, and 48. In some non-limiting examples, the first ligand portion and the second ligand portion may contain the same number of fluorine atoms.

[0172] In some non-limiting examples, the first ligand portion and the second ligand portion may contain different numbers of CF2 portions. In some non-limiting examples, the number of CF2 portions in the first ligand portion and the second ligand portion may differ by no more than one of about 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, and 22. In some non-limiting examples, the first ligand portion and the second ligand portion may contain the same number of CF2 portions.

[0173] In some non-limiting examples, the first ligand portion and the second ligand portion may contain different numbers of C atoms. In some non-limiting examples, the number of C atoms in the first ligand portion and the second ligand portion may differ by no more than one of about 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, and 22. In some non-limiting examples, the first ligand portion and the second ligand portion may contain the same number of C atoms.

[0174] In some non-limiting examples, the molar weight attributable to the first ligand moiety may differ from the molar weight attributable to the second ligand moiety. In some non-limiting examples, the molar weight attributable to the first ligand moiety and the second ligand moiety may differ by at least one of about 14 g / mol, 30 g / mol, 45 g / mol, 50 g / mol, 75 g / mol, 100 g / mol, 150 g / mol, and 200 g / mol. In some non-limiting examples, the molar weight attributable to the first ligand moiety and the second ligand moiety may differ by no more than one of about 20 g / mol, 40 g / mol, 50 g / mol, 100 g / mol, 150 g / mol, 200 g / mol, 300 g / mol, 400 g / mol, 500 g / mol, 600 g / mol, 700 g / mol, 800 g / mol, 900 g / mol, and 1,100 g / mol. In some non-limiting examples, the molar weight attributable to the second ligand portion may not exceed the molar weight attributable to the first ligand portion.

[0175] As used herein, the term “F content” for a ligand moiety can be understood to generally correspond to the amount of F contained in the ligand moiety, which in some non-limiting examples is measured by at least one of the atomic percentage, weight percentage, and volume percentage of the ligand moiety.

[0176] In some non-limiting examples, the first ligand portion and the second ligand portion may have different degrees of fluorination. In some non-limiting examples, the degree of fluorination can be measured by the F content of each ligand portion. In some non-limiting examples, the degree of fluorination can be measured by the F / C quotient, which can represent the ratio of the number of F atoms to the number of C atoms present in the ligand portion. In some non-limiting examples, the degree of fluorination of the first ligand portion and the second ligand portion may differ by no more than one of about 0.03, 0.09, 0.14, 0.18, 0.22, 0.28, 0.36, 0.56, 0.71, 0.78, 0.82, 0.99, 1.56, 1.64, 1.78, 1.85, 1.98, 2.34, 3.56, 3.64, and 3.70.

[0177] Core part In some non-limiting examples, the core portion of the mixed ligand compound may include at least one of the following: an aromatic portion (including but not limited to aromatic hydrocarbon portions, polycyclic aromatic hydrocarbon portions, and heterocyclic aromatic portions (including but not limited to those containing polycyclic structures)); a cyclic hydrocarbon portion; a heterocyclic portion; a straight-chain portion (including but not limited to those containing at least one of the following: straight-chain portions containing at least one heteroatom and straight-chain hydrocarbon portions); a branched portion (including but not limited to those containing at least one of the following: branched portions containing at least one heteroatom and branched hydrocarbon portions); a crosslinked portion (including but not limited to those containing at least one of the following: crosslinked portions containing at least one heteroatom and hydrocarbon crosslinked portions); a portion having a cage-like structure; an oligomerized portion; and a polymeric portion.

[0178] In some non-limiting examples, the core portion may include a heterocyclic portion, including but not limited to a heterocyclic portion containing at least one N atom. In some non-limiting examples, the heterocyclic portion may include a triazole portion. In some non-limiting examples, the core portion may include metal atoms, including but not limited to transition atoms and post-transition atoms. In some non-limiting examples, the metal atoms may include at least one of the following: aluminum (Al) atoms, copper (Cu) atoms, iridium (Ir) atoms, and platinum (Pt) atoms. In some non-limiting examples, the core portion may include at least one of the following: N atoms, O atoms, and phosphorus (P) atoms. In some non-limiting examples, the core portion may include a cyclic hydrocarbon portion, which in some non-limiting examples may be aromatic. In some non-limiting examples, the core moiety may include at least one of the following: substituted alkyl, unsubstituted alkyl, cycloalkynyl (including but not limited to those containing between 1 and 7 C atoms), alkenyl, alkynyl, aryl (including but not limited to one of phenyl, naphthyl, thiophene, and indolyl), arylalkyl, heterocyclic moiety (including but not limited to cyclic amines, including but not limited to one of morpholino, piperidinyl, and pyrrolidinyl), cyclic ether moiety (including but not limited to one of tetrahydrofuran and tetrahydropyran), heteroaryl (including but not limited to one of pyrrole, furan, thiophene, imidazole, oxazole, thiazole, triazole, pyrazole, pyridine, pyrazine, pyrimidine, polycyclic heteroaryl moiety, and dibenzylphenylthio), fluorene moiety, and silyl.

[0179] In some non-limiting examples, the core portion may include at least one of the chemical formulas (AR-1) to (AR-31):

[0180] In each of the chemical formulas (AR-1) to (AR-31): XIndependently representing either C or a heteroatom, which in some non-limiting examples may serve as a core component. R The bonding sites of groups (including but not limited to ligand moieties); and Q Independently representing either C or a heteroatom, which in some non-limiting examples may serve as a core component. R The bonding site of a group (including but not limited to the ligand portion).

[0181] In some non-restrictive examples, X It can be a heteroatom selected from O and N, including but not limited to substituted and unsubstituted heteroatoms.

[0182] In some non-restrictive examples, Q It can be a heteroatom selected from N, S, O and Si, including but not limited to substituted and unsubstituted heteroatoms.

[0183] In some non-limiting examples, the core portion may include a cyclophosphonitrile portion. In some non-limiting examples, the cyclophosphonitrile portion may be one of a cyclic triphosphonitrile portion and a cyclic tetraphosphonitrile portion.

[0184] In some non-limiting examples, the compound may include those represented by any of the chemical formulas (C-1) to (C-6):

[0185] Explanation of chemical formulas (C-1) to (C-6) R Non-limiting examples of bonding arrangements between the groups and the core moiety. In each of the chemical formulas (C-1) to (C-6), R Each group can independently represent a ligand moiety each time it appears. In some non-limiting examples, R At least one of the groups can represent the first ligand moiety, and the others R At least one of the groups can represent the second ligand moiety.

[0186] In some non-limiting examples, the core moiety may include a silsesquioxane moiety. In some non-limiting examples, the compound may contain a core moiety represented by one of the following: (RSiO 1.5 8. (RSiO) 1.5 ) 10 and (RSiO) 1.5 ) 12 In some non-limiting examples, the molecular structure of such a compound can be represented by one of the chemical formulas (PO-1) to (PO-3):

[0187] In some non-limiting examples, the chemical formulas (PO-1) to (PO-3) R Groups can be present in each (RSiO) 1.5 The unit is selected independently when it appears. In some non-restricted examples, two different units are included. R Chemical formula of the group (RSiO) 1.5 ) v Compounds can also be made from chemical formulas (R... 1 SiO 1.5 ) w (R 2 SiO 1.5 ) x It means that among them w and x The sum equals v In some non-limiting examples, this compound and compounds containing a variety of different... R Other compounds of the group can be derived from the general chemical formula (RSiO). 1.5 ) v Coverage. In some non-restrictive examples, R At least one of the groups can represent the first ligand moiety, and the others R At least one of the groups can represent the second ligand moiety.

[0188] In some non-limiting examples, the core portion may include a heterocyclic portion. In some non-limiting examples, the heterocyclic portion may comprise a monocyclic structure, including but not limited to those represented by any of the chemical formulas (MC-1) to (MC-23):

[0189] In each of the aforementioned chemical formulas (MC-1) to (MC-23), R A and R B Each occurrence can independently represent the ligand portion. R In some non-restrictive examples, R At least one of the groups can represent the first ligand moiety, and the others R At least one of the groups can represent the second ligand moiety.

[0190] In some non-limiting examples, the heterocyclic portion may comprise a fused polycyclic structure comprising multiple fused ring structures such that adjacent ring structures may share multiple adjacent atoms.

[0191] In some non-limiting examples, the heteroaryl moiety may comprise a polycyclic structure, including but not limited to those represented by any of the chemical formulas (PC-1) to (PC-27):

[0192] In each of the aforementioned formulas, R A and R B Each occurrence can independently represent the ligand portion. R In some non-restrictive examples, R At least one of the groups can represent the first ligand moiety, and the others R At least one of the groups can represent the second ligand moiety.

[0193] In some non-limiting examples, the core portion may include one of the following: an aryl and heteroaryl moiety represented by any of the chemical formulas (AN-1) to (AN-66):

[0194] It should be understood that, when denoteing a core portion, either the aryl or heteroaryl moiety according to chemical formulas (AN-1) to (AN-66) can be bonded to another portion of the molecule at any site of either the C or the heteroatom, which can be used to form such a bond, including but not limited to either the first ligand moiety or the second ligand moiety. In some non-limiting examples, in formulas containing an NH group, the H can be replaced by a “bond” with another portion of the molecule, such that, in some non-limiting examples, an NC bond can be formed between the N atom of the heteroaryl group and the C atom of another portion of the molecule.

[0195] Phosphazene core and multiple ligand moieties In some non-limiting examples, the mixed ligand compound may comprise a phosphazene moiety as a core portion and multiple ligand moieties bonded thereto. In some non-limiting examples, the core portion may be a cyclophosphazene moiety.

[0196] In some non-limiting examples, the molecular structure of the mixed ligand compound may be represented by any of formulas (XAA-1) to (XAA-5) and (XAB-1) to (XAB-7):

[0197] In each of the aforementioned chemical formulas (XAA-1) to (XAA-5) and (XAB-1) to (XAB-7), R 1 Indicates the first ligand portion. R 2 This refers to the second ligand portion.

[0198] In some non-limiting examples, the first ligand moiety can be represented by the chemical formula (FCM-1): (FCM-1) in: t It is an integer between 1 and 3; u It is an integer between 5 and 12; and Z It represents one of the following: H, D, and F.

[0199] In some non-limiting examples, the first ligand moiety can be represented by the chemical formula (FCM-2): (FCM-2) in: v It is an integer between 1 and 3; w It is an integer between 3 and 15; and Z It represents one of the following: H, D, and F.

[0200] In some non-restrictive examples, w It can not exceed u In some non-restrictive examples, w and u The difference between them can be one of 2, 3, 4, 5, and 6.

[0201] In some non-restrictive examples, t and v They can represent the same value. In some non-restricted examples, t and v Both can be 1.

[0202] In some non-limiting examples, the chemical formula (FCM-1) Z and chemical formula (FCM-2) Z They can represent the same atom. In some non-limiting examples, the first ligand portion... Z and the second ligand portion Z It can represent one of the following: H and D. In some non-limiting examples, the chemical formula (FCM-1)Z It can represent one of the following: H and D, and the chemical formula (FCM-2) Z It can represent F.

[0203] In some non-limiting examples, this paper summarizes compounds based on one of the chemical formulas (XAA-5) and (XAB-2), wherein R 1 Represented by the chemical formula (FCM-1), and R 2 It is represented by the chemical formula (FCM-2).

[0204]

[0205]

[0206] Compositions containing multiple compounds In some non-limiting examples, a composition comprising multiple compounds may be provided. In some non-limiting examples, each of the multiple compounds may comprise a core portion and at least one ligand portion bonded to the core portion. In some non-limiting examples, at least one of the multiple compounds may be a mixed ligand compound. In some non-limiting examples, the multiple compounds may comprise at least one common ligand portion. In some non-limiting examples, the composition may comprise a mixed ligand compound containing at least one first ligand portion and at least one second ligand portion, and a second compound containing at least one first ligand portion of the mixed ligand compound. In some non-limiting examples, such a composition may be provided as a formulation for forming thin films for various applications, including semiconductors, displays, and optical coatings. In some non-limiting examples, such a composition may be part of a layered semiconductor device 100.

[0207] In some non-limiting examples, at least one compound of the composition may include a ligand moiety that is not present in another compound of the composition.

[0208] In some non-limiting examples, the number of first ligand portions of the second compound may be equal to the sum of the numbers of first and second ligand portions of the mixed ligand compound. In some non-limiting examples, the number of second ligand portions in at least one of the mixed ligand compound and the second compound may not exceed the number of first ligand portions therein. In some non-limiting examples, the ligand portions of the mixed ligand compound may consist substantially of first and second ligand portions. In some non-limiting examples, the ligand portions of the second compound may consist substantially of first ligand portions.

[0209] In some non-limiting examples, the mixed ligand compound may comprise a second ligand moiety, and the remaining ligand moiety may consist substantially of a first ligand moiety. In some non-limiting examples, the majority of the composition may consist substantially of the mixed ligand compound, and the remainder of the composition may consist substantially of the second compound. In some non-limiting examples, the mixed ligand compound may constitute at least one of about 50%, 60%, 70%, 75%, 80%, 85%, 90%, 95%, 98%, and 99% of the composition.

[0210] In some non-limiting examples, the mixed ligand compound may comprise a first ligand portion to a second ligand portion in a ratio of approximately 1:1 based on the number of ligand portions constituted by such a compound. In some non-limiting examples, the composition may comprise additional mixed ligand compounds, including but not limited to a second compound, comprising a first ligand portion to a second ligand portion in a ratio of at least approximately 1:2, 2:1, 1:5, and 5:1 based on the number of ligand portions constituted by such compounds. In some non-limiting examples, the percentage of the mixed ligand compound in the composition may be a percentage of at least any other compound in the composition.

[0211] In some non-limiting examples, each of the multiple compounds in the composition may comprise: a first ligand portion and a second ligand portion. In some non-limiting examples, each of the multiple compounds may be a mixed ligand compound. In some non-limiting examples, the multiple compounds in the composition may comprise at least one first ligand portion and at least one second ligand portion. In some non-limiting examples, the multiple compounds in the composition may have different ratios in the number of first ligand portions to the number of second ligand portions. In some non-limiting examples, the composition may comprise an additional compound comprising one of a first ligand portion and a second ligand portion.

[0212] In some non-limiting examples, the core moiety of each of the multiple compounds may be substantially identical in chemical structure. In some non-limiting examples, the core moiety may be a cyclophosphonitrile moiety, including but not limited to one of a cyclic triphosphonitrile moiety and a cyclic tetraphosphonitrile moiety.

[0213] In some non-limiting examples, compositions comprising multiple compounds having substantially similar chemical structures (including, but not limited to, compounds comprising at least one of a common core portion, a first ligand portion, and a second ligand portion) may tend to exhibit a set of corresponding properties that differ from a set of properties of any single compound in the composition. Without wishing to be bound by any particular theory, it can be assumed that the composition may be suitable for providing a patterned coating 110 in at least some cases. In some non-limiting examples, it has been found that a patterned coating 110 comprising a composition may tend to exhibit a melting point at least that of a first compound and an initial adhesion probability not exceeding that of a second compound, the composition comprising: a first compound having a low melting point and a low initial adhesion probability, and a second compound having a high melting point and a high initial adhesion probability. In some non-limiting examples, such compositions may provide the ability to tune at least one property of the patterned coating 110 by, but not limited to, adjusting the individual amounts of the compounds in the composition.

[0214] In some non-limiting examples, the molar weight of the compounds in the composition may vary by no more than one of about 4,300 g / mol, 4,000 g / mol, 3,700 g / mol, 3,500 g / mol, 3,100 g / mol, 2,800 g / mol, 2,400 g / mol, 2,200 g / mol, 1,800 g / mol, 1,400 g / mol, 1,200 g / mol, 900 g / mol, 800 g / mol, 700 g / mol, 600 g / mol, 500 g / mol, 400 g / mol, 300 g / mol, 200 g / mol, 100 g / mol, 40 g / mol, and 20 g / mol.

[0215] Without wishing to be bound by any particular theory, it may be assumed that substantially small differences in the molar weights of the compounds in the composition may be applicable in at least some cases. In some non-limiting examples, compositions comprising multiple compounds may be applicable in some cases, the molar weights of which differ by no more than one of about 1,000, 900, 800, 700, 600, 500, 400, 300, and 200. In some non-limiting examples, compounds with substantially small molar weight differences may tend to exhibit similar sublimation properties, which in some non-limiting examples may correspond to similar sublimation temperatures and partial pressures exhibited by the compounds at a given temperature. In some non-limiting examples, where the composition sublimates to provide a patterned coating 110, the compounds in the composition, including but not limited to compounds with substantially small molar weight differences, may facilitate the provision of a substantially uniform patterned coating 110, even over extended deposition periods.

[0216] Those skilled in the art will understand that polydispersity is roughly analogous to the polydispersity index (PDI), which is the quotient of the weight-average molar weight and the number-average molar weight of the composition according to equation (1): (1) in: Indicates the polydispersity index; M w Indicates weight-average molar weight; and M n This indicates the number-average molar weight.

[0217] In some non-limiting examples, the polydispersity of the composition may be no more than one of about 2.08, 2.06, 2.04, 2.02, and 2.00. In some non-limiting examples, the polydispersity of the composition may be at least one of about 1.04, 1.03, 1.02, 1.01, and 1.00.

[0218] In some non-limiting examples, the compounds in the composition may exhibit substantially the same vapor pressure.

[0219] Fluorine and silicon In some non-limiting examples, at least one of the patterned coating 110 and the patterned material 411 may include at least one of F atoms and Si atoms. In some non-limiting examples, the patterned material 411 used to form the patterned coating 110 may be a compound containing at least one of F and Si.

[0220] In some non-limiting examples, patterning material 411 may include compounds that may contain F. In some non-limiting examples, patterning material 411 may include compounds that may contain both F and C atoms. In some non-limiting examples, patterning material 411 may include compounds that may contain both F and C, wherein the atomic ratio of F to C corresponds to an F / C quotient of at least one of about 1.3, 1.5, 1.7, and 2. In some non-limiting examples, the atomic ratio of F to C may be determined by counting all F atoms present in the compound structure, and for C atoms, only counting sp atoms present in the compound structure. 3The hybrid C atoms are counted. In some non-limiting examples, the patterned material 411 may include a compound that may include F and C portions as part of its molecular substructure, wherein the atomic ratio of F to C corresponds to an F / C quotient of no more than one of about 2.0, 2.5, 3.0, 3.5, 4.0, 4.5, 5.0, 5.5, 6.0, 6.5 and 7.0.

[0221] Initial adhesion probability In some non-limiting examples, the initial adhesion probability of the patterned material 411 can be determined by depositing such material as at least one of a film or coating, and in an environment similar to the deposition of the patterned coating 110 within the device 100, having a sufficient thickness to mitigate / reduce any effect on the degree of intermolecular interaction with the underlying layer when deposited on the surface. In some non-limiting examples, the initial adhesion probability can be measured on films / coatings with thicknesses of at least about 20 nm, 25 nm, 30 nm, 50 nm, 60 nm, and 100 nm.

[0222] In some non-limiting examples, at least one of the patterned coating 110 and the patterned material 411 (in some non-limiting examples, when deposited as at least one of some form of film and coating and under conditions similar to the deposition of the patterned coating 110 within the device 100) may have an initial adhesion probability to the deposition of the deposited material 531 of no more than one of about 0.3, 0.2, 0.15, 0.1, 0.08, 0.05, 0.03, 0.02, 0.01, 0.008, 0.005, 0.003, 0.001, 0.0008, 0.0005, 0.0003, and 0.0001.

[0223] In some non-limiting examples, at least one of the patterned coating 110 and the patterned material 411 (in some non-limiting examples, when deposited as at least one of some form of film and coating and under conditions similar to the deposition of the patterned coating 110 within the device 100) may have an initial adhesion probability for the deposition of at least one of Ag and Mg, not exceeding one of about 0.3, 0.2, 0.15, 0.1, 0.08, 0.05, 0.03, 0.02, 0.01, 0.008, 0.005, 0.003, 0.001, 0.0008, 0.0005, 0.0003, and 0.0001.

[0224] In some non-limiting examples, at least one of the patterned coating 110 and the patterned material 411 (in some non-limiting examples, when deposited as at least one of some form of film and coating and under conditions similar to the deposition of the patterned coating 110 within the device 100) may have a strength of about 0.15-0.0001, 0.1-0.0003, 0.08-0.0005, or 0.08-0.0008. 0.05-0.001, 0.03-0.0001, 0.03-0.0003, 0.03-0.0005, 0.03-0.0008, 0.03-0.001, 0.03-0.005, 0.03-0.008, 0.03-0.01, 0.02-0.0001, 0.02-0.0003, 0.02-0.0005, 0.02-0.0 008, 0.02-0.001, 0.02-0.005, 0.02-0.008, 0.02-0.01, 0.01-0.0001, 0.01-0.0003, 0.01-0.0005, 0.01-0.0008, 0.01-0.001, 0.01-0.005, 0.01-0.008, 0.008-0.0001, 0.008- The initial adhesion probability of the deposition of the deposition material 531 is one of the following values: 0.0003, 0.008-0.0005, 0.008-0.0008, 0.008-0.001, 0.008-0.005, 0.005-0.0001, 0.005-0.0003, 0.005-0.0005, 0.005-0.0008, and 0.005-0.001.

[0225] In some non-limiting examples, at least one of the patterned coating 110 and the patterned material 411 (in some non-limiting examples, when deposited as at least one of some form of film and coating and under conditions similar to the deposition of the patterned coating 110 within the device 100) may have an initial adhesion probability to the deposition of a variety of deposition materials 531 not exceeding a threshold, including but not limited to at least one selected from silver (Ag), magnesium (Mg), ytterbium (Yb), cadmium (Cd), and zinc (Zn). In some non-limiting examples, such a threshold may be one of about 0.3, 0.2, 0.18, 0.15, 0.13, 0.1, 0.08, 0.05, 0.03, 0.02, 0.01, 0.008, 0.005, 0.003, 0.001, 0.0008, 0.0005, 0.0003, and 0.0001.

[0226] In some non-limiting examples, at least one of the patterned coating 110 and the patterned material 411 (in some non-limiting examples, when deposited as at least one of some form of film and coating and under conditions similar to the deposition of the patterned coating 110 within the device 100) may have an initial adhesion probability of no more than such a threshold for the deposition of a plurality of deposition materials 531 selected from at least one of Ag, Mg, Yb, Cd, and Zn. In some non-limiting examples, the patterned coating 110 may exhibit an initial adhesion probability of no more than such a threshold for the deposition of a plurality of deposition materials 531 selected from at least one of Ag, Mg, and Yb.

[0227] In some non-limiting examples, at least one of the patterned coating 110 and the patterned material 411 (in some non-limiting examples, when deposited as at least one of some form of film and coating and under conditions similar to the deposition of the patterned coating 110 within the device 100) may exhibit an initial adhesion probability for the deposition of the first deposited material 531 equal to, but not limited to, a first threshold, and an initial adhesion probability for the deposition of the second deposited material 531 equal to, but not limited to, a second threshold, lower than a second threshold. In some non-limiting examples, the first deposited material 531 may be Ag, and the second deposited material 531 may be Mg. In some non-limiting examples, the first deposited material 531 may be Ag, and the second deposited material may be Yb. In some non-limiting examples, the first deposited material 531 may be Yb, and the second deposited material 531 may be Mg. In some non-limiting examples, the first threshold may exceed the second threshold.

[0228] In some non-limiting examples, there may be a scenario where a patterned coating 110 is required to induce the formation of at least one discontinuous layer 160 of particulate structure 150 when the patterned coating 110 is subjected to a vapor flux 532 of deposited material 531. In some non-limiting examples, the patterned coating 110 may exhibit a substantially low initial adhesion probability, such that a closed coating 140 of deposited material 531 may be formed in a second portion 102, which may be substantially free of patterned coating 110, while a discontinuous layer 160 of at least one particulate structure 150 having at least one characteristic may be formed on the patterned coating 110 in the first portion 101. In some non-limiting examples, there may be a scenario where a discontinuous layer 160 of at least one particulate structure 150 of deposited material 531 needs to be formed in the second portion 102 (in some non-limiting examples, the deposited material may be one of metal and metal alloy), while simultaneously depositing a sealing coating 140 of deposited material 531 having a thickness of, for example, no more than one of about 100 nm, 50 nm, 25 nm, and 15 nm. In some non-limiting examples, the amount of deposited material 531 deposited in the first portion 101 as the discontinuous layer 160 of at least one particulate structure 150 may correspond to one of about 1%-50%, 2%-25%, 5%-20%, and 7%-10% of the amount of deposited material 531 deposited in the second portion 102 as the sealing coating 140, and in some non-limiting examples, the sealing coating may correspond to a thickness of no more than one of about 100 nm, 75 nm, 50 nm, 25 nm, and 15 nm.

[0229] In some non-limiting examples, there may be a positive correlation between the initial adhesion probability of the deposition of the deposited material 531 to at least one of the patterned coating 110 and the patterned material 411 (in some non-limiting examples, when deposited as at least one of some form of film and coating and under conditions similar to the deposition of the patterned coating 110 within the device 100) and the average layer thickness of the deposited material 531 thereon.

[0230] transmittance In some non-limiting examples, at least one of the patterned coating 110 and the patterned material 411 (in some non-limiting examples, when deposited as at least one of some form of film and coating and under conditions similar to the deposition of the patterned coating 110 within the device 100) may have a transmittance of at least a threshold transmittance value for light after being subjected to a vapor flux 532 of the deposited material 531, including but not limited to Ag.

[0231] In some non-limiting examples, this transmittance can be measured under typical conditions suitable for depositing electrodes of optoelectronic device 200 (in some non-limiting examples, which may be the cathode of organic light-emitting diode (OLED) device 200) after exposing the exposed layer surface 11 of at least one of the patterned coating 110 and patterned material 411 formed as a thin film to a vapor flux 532 of deposited material 531 (including but not limited to at least one of metals and alloys, including but not limited to at least one of Yb, Ag, Mg and Ag-containing materials (including but not limited to MgAg)).

[0232] In some non-limiting examples, conditions for subjecting the exposed layer surface 11 to a vapor flux 532 of the deposited material 531 (including, but not limited to, at least one of metals and alloys, including, but not limited to, at least one of Yb, Ag, Mg, and Ag-containing materials (including, but not limited to, MgAg)) may include: maintaining a vacuum pressure at a reference pressure, including, but not limited to, about 10 -4 To and 10 -5 One of the deposited materials 531; the vapor flux 532 of the deposited material 531 (including but not limited to at least one of metals and alloys, including but not limited to at least one of Yb, Ag, Mg and Ag-containing materials (including but not limited to MgAg)) is substantially consistent with a reference deposition rate, including but not limited to about 1 Å / s, which may be monitored using a QCM in some non-limiting examples; the vapor flux 532 of the deposited material 531 is directed to the exposed layer surface 11 at an angle substantially close to perpendicular to the plane of the exposed layer surface 11; the exposed layer surface 11 is subjected to the deposited material 531 (including but not limited to at least one of metals and alloys, including but not limited to at least one of Yb, Ag, Mg and Ag-containing materials (including but not limited to MgAg)) vapor flux 532, until a reference average layer thickness of including but not limited to about 15 nm is reached; and when such a reference average layer thickness is reached, the exposed layer surface 11 is not further subjected to the vapor flux of the deposited material 531 (including but not limited to at least one of metals and alloys, including but not limited to at least one of Yb, Ag, Mg and Ag-containing materials (including but not limited to MgAg)).

[0233] In some non-limiting examples, the exposed layer surface 11 subjected to a vapor flux 532 of the deposited material 531 (including but not limited to at least one of Yb, Ag, Mg, and Ag-containing materials (including but not limited to MgAg)) may be substantially at room temperature (e.g., about 25°C). In some non-limiting examples, the exposed layer surface 11 subjected to a vapor flux 532 of the deposited material 531 (including but not limited to at least one of metals and alloys, including but not limited to Yb, Ag, Mg, and Ag-containing materials (including but not limited to MgAg)) may be positioned about 65 cm away from the evaporation source, through which the deposited material 531 (including but not limited to at least one of metals and alloys, including but not limited to Yb, Ag, Mg, and Ag-containing materials (including but not limited to MgAg)) evaporates.

[0234] In some non-limiting examples, the threshold transmittance value can be measured at a wavelength in the visible spectrum, which may be at least about 450 nm, 500 nm, 550 nm, and 600 nm. In some non-limiting examples, the threshold transmittance value can be measured at a wavelength in at least one of the IR and NIR spectra. In some non-limiting examples, the threshold transmittance value can be measured at a wavelength, which may be about 700 nm, 900 nm, and 1000 nm. In some non-limiting examples, the threshold transmittance value may be expressed as a percentage of the incident EM power that can be transmitted through the sample. In some non-limiting examples, the threshold transmittance value may be at least about 60%, 65%, 70%, 75%, 80%, 85%, and 90%.

[0235] Those skilled in the art will understand that high transmittance generally indicates the absence of a sealing coating 140 containing deposited material 531 (including, but not limited to, at least one of Yb, Ag, Mg, and Ag-containing materials (including, but not limited to, MgAg)). On the other hand, low transmittance generally indicates the presence of a sealing coating 140 containing deposited material 531 (including, but not limited to, Yb, Ag, Mg, and Ag-containing materials (including, but not limited to, MgAg)) because the metal film (especially when formed as a sealing coating 140) can exhibit high light absorption.

[0236] A series of samples were manufactured to measure the transmittance of the example material and to visually observe whether a sealing coating 140 of the deposited material 531 was formed on the exposed surface 11 of the example material.

[0237] The molecular structures of the example materials used in the samples in this article are listed in Table 1 below: Table 1

[0238] Those skilled in the art will understand that a sample having little to no deposited material 531 (including, but not limited to, at least one of metals and alloys, including but not limited to, Yb, Ag, Mg, and Ag-containing materials (including but not limited to, MgAg)) can be substantially transparent, while a sample having a large amount of at least one of metals and alloys deposited thereon (including but not limited to, as a sealing coating 140) can exhibit significantly reduced transmittance in some non-limiting examples. Therefore, the performance of various exemplary coatings as patterned coating 110 can be evaluated by measuring the transmittance through the sample, which can be inversely proportional to at least one of the amount of deposited material 531 deposited thereon and the average layer thickness, including but not limited to, at least one of metals and alloys, including but not limited to, in the form of at least one of Yb, Ag, Mg, and Ag-containing materials (including but not limited to, MgAg), because metal films (including but not limited to, when formed as sealing coating 140) can exhibit high absorption of light.

[0239] Specifically, the following experiments were conducted to compare the performance of the patterned coating 110 containing various exemplary materials.

[0240] Experiment 1 A series of samples were fabricated by vacuum deposition of a nucleating modification material layer approximately 30 nm thick over a glass substrate. The nucleating modification material varied between samples. For each sample, an open-mask deposition of a deposition material 531 containing Ag was then performed on the exposed surface 11 of the thus formed nucleating modification coating at a rate of approximately 1 Å / s until a reference thickness of approximately 15 nm was obtained. Once the samples were fabricated, EM transmittance measurements were performed to determine the relative amount of deposited material deposited on the exposed surface 11 of the patterned coating 110. Those skilled in the art will understand that samples with little or no metal present can be substantially transparent, while samples with metal deposited on them (especially as a sealing coating) can generally exhibit substantially low transmittance.

[0241] Table 2 below shows the measured transmittance at wavelengths of 450 nm, 520 nm, and 850 nm after each sample was subjected to a vapor flux of 532 g of Ag.

[0242] Table 2

[0243] As can be seen from the results in Table 2, it has now been found that, in some non-limiting examples, nucleating modified materials comprising a core portion, a first ligand portion, and a second ligand portion can exhibit different EM transmittance characteristics. In some non-limiting examples, nucleating modified materials comprising a core portion, a first ligand portion, and a second ligand portion (including but not limited to EM-19 and EM-64 to EM-74) can exhibit EM transmittance characteristics at at least one of wavelengths of about 450 nm, 520 nm, and 850 nm, which are at least substantially free of the EM transmittance characteristics of nucleating modified materials containing at least one of the following: a core portion, a first ligand portion, and a second ligand portion, including but not limited to EM-13.

[0244] Experiment 2 A series of samples were fabricated by vacuum deposition of a nucleating modification material layer approximately 30 nm thick over a glass substrate. The nucleating modification material varied between samples. For each sample, the exposed surface 11 of the resulting nucleating modification coating was then subjected to open-mask deposition of a deposition material 531 comprising Yb:LiF (1:1 (volume:volume)) until a reference thickness of approximately 1.5 nm was achieved, followed by MgAg (Mg:Ag = 1:9 (volume:volume)) until a reference thickness of approximately 15 nm was achieved. Once the samples were fabricated, EM transmittance measurements were performed to determine the relative amounts of deposition material deposited on the exposed surface 11 of the patterned coating 110.

[0245] Table 3 below shows the transmittance measured at wavelengths of 450 nm, 520 nm, and 850 nm after each sample was subjected to a vapor flux of 532 of Yb:LiF and MgAg.

[0246] Table 3

[0247] The reduction in EM transmittance at wavelengths of 450 nm, 520 nm, and 850 nm after each sample was subjected to a vapor flux of 532 of Yb:LiF (1:1 (volume:volume)) and MgAg (1:9 (volume:volume)) is summarized in Table 4. The reduction in EM transmittance was determined by measuring the EM transmittance through each sample and comparing that transmittance with that of a reference sample in which no exposure to a vapor flux of 532 of Yb:LiF and MgAg occurred.

[0248] Table 4

[0249]

[0250] As can be seen from the results in Tables 3 and 4, it has now been found that, in some non-limiting examples, nucleating modified materials comprising a core portion, a first ligand portion, and a second ligand portion can exhibit different EM transmittance characteristics. In some non-limiting examples, nucleating modified materials comprising a core portion, a first ligand portion, and a second ligand portion (including but not limited to EM-18, EM-75 to EM-79, and EM-81 to EM-83) can exhibit EM transmittance characteristics at at least one of wavelengths of about 450 nm, 520 nm, and 850 nm, which are at least substantially free of the EM transmittance characteristics of nucleating modified materials containing at least one of the following: a core portion, a first ligand portion, and a second ligand portion, including but not limited to EM-4, EM-11, and EM-12.

[0251] Synthesis Example Synthesis of EM-18, EM-70, EM-71, EM-72, EM-75, EM-77 and EM-78 Each of these compounds was synthesized from sample EM-11 using a three-step process involving the formation of two reaction intermediates: IM-11-OH and IM-11-Cl, as outlined in the following scheme:

[0252] I. Synthesized from hexachlorocyclic triphosphazene EM-11 In a 2.0 L round-bottom flask equipped with a stir bar, 12.8 g of NaOH was placed in 20 mL of deionized (DI) water and suspended in 500 mL of toluene. 145.1 g of 1H,1H,9H-hexadecylfluoro-1-nonanol was added, and the suspension was heated at 95 °C under a continuous nitrogen (N2) stream for a total of 4 hours. During this period, the solid broke apart.

[0253] The temperature was adjusted to 85°C, and a water condenser was attached to the flask under a nitrogen atmosphere. 13.92 g of hexachlorocyclotriphosphazene dissolved in 100 mL of anhydrous tetrahydrofuran (THF) under nitrogen was added to the reaction mixture via a tubing. The reaction mixture was stirred at 85°C for 2 hours, and then stirred at room temperature for 48 hours.

[0254] The reaction was quenched by adding 200 mL of water and filtered under vacuum through a filter funnel (pore size: approximately 10 μm–20 μm). The collected solid was washed with water (3 × 1 L), isopropanol (1 L), and dichloromethane (DCM, 1 L). 95.2 g of a white solid was collected and identified as sample EM-11. Sample EM-11 was further purified by vacuum sublimation.

[0255] II. IM-11-OH The formation In a 1.0 L round-bottom flask equipped with a stir bar and a water condenser, 50 g of EM-11 was dissolved in 250 mL of acetone. Then, 25 mL of DI water was added to the flask to obtain a clear solution. The reaction mixture was heated to 80 °C, and then NaOH was added. The reaction mixture was stirred continuously for 48 hours, after which 300 mL of water was added to the reaction mixture. The acetone was removed from the mixture using a rotary evaporator. The mixture was then acidified with concentrated HCl and stirred for 2 hours. The mixture was filtered under vacuum using a medium filter to obtain a brown solid. The solid was washed with acetone / DCM (1:1, 3 x 100 mL / 100 mL) and then dried to obtain IM-11-OH.

[0256] II. IM-11-Cl The formation 26 g of IM-11-OH, suspended in 200 mL of toluene, was placed in a 1.0 L round-bottom flask equipped with a stir bar and a water condenser. 10 mL of SOCl2 was added, and 50 μL of N,N-dimethylformamide (DMF) was slowly added to the flask. The suspension was then heated at 110 °C and stirred for 18 hours. The product obtained after evaporating the solvent was IM-11-Cl.

[0257] III. Formation of the final product Using a syringe, add the solvent and R2-OH to a dry 250 mL round-bottom flask equipped with a stir bar, argon balloon, and diaphragm. Cool the reaction flask to 0°C in an ice bath and add the base. Stir the mixture overnight or until gas escape stops. Then add IM-11-Cl to the mixture while maintaining the reaction temperature at 0°C. Stir the reaction overnight or until the reaction is complete.

[0258] The solvent is then removed by rotary evaporation to concentrate the solution and form a suspension. The resulting suspension is then filtered from the mixture. The solids recovered from the filtration are optionally washed with water, MeOH, DCM, and isopropanol to obtain the final compound.

[0259] The reactants and solvents involved in step III are summarized in Table 5.

[0260] Table 5

[0261] Synthesis of EM-19 1H,1H,11H-perfluoroundecane-1-ol (40 mmol, 21.28 g) and 1H,1H,9H-hexadecfluoro-1-nonanol (40 mmol, 17.28 g) were placed in a 1.0 L round-bottom flask equipped with a stir bar. 500 mL of anhydrous THF was then added to form a mixture, which was purged under argon. Subsequently, NaH (1.8 g, 75 mmol) was added to the reaction at room temperature, and the reaction was stirred for 3 hours.

[0262] Octachlorocyclotriphosphazene (8.9 mmol, 4.1 g) was added to the reaction at room temperature, and the reaction was stirred for approximately 36 hours. The mixture was filtered, and the solvent was evaporated using a rotary evaporator. The remaining solid was dissolved in acetone (approximately 20 mL), and water (approximately 500 mL) was added to the solution to precipitate the solid. The mixture was filtered directly to obtain the solid, which was then washed with water (2 x 300 mL), isopropanol (1 x 300 mL), and DCM (2 x 300 mL). The dried solid was then sublimated under vacuum to give the product.

[0263] Deposition contrast In some non-limiting examples, when deposited on substrate 10, the material (including but not limited to patterned material 411) that can be used as a given at least one of metals and alloys (including but not limited to at least one of Mg, Ag and MgAg) can have substantially high deposition contrast.

[0264] In some non-limiting examples, if substrate 10 tends to act as nucleation promoting coating (NPC) 720 ( Figure 7A The coated portion (first portion 101) and the uncoated portion (second portion 102) are coated with a material (including but not limited to patterned material 411) that may act as a NIC to prevent the deposition of the deposited material 531. The deposited material includes but is not limited to at least one of metals and alloys (including but not limited to at least one of Yb, Ag, Mg and Ag-containing materials (including but not limited to MgAg)). The coated portion (first portion 101) and the uncoated portion (second portion 102) may tend to have at least one of different initial adhesion probabilities and nucleation rates, such that the deposited material 531 deposited thereon may tend to have different average film thicknesses.

[0265] As used herein, in this scenario, the quotient of the average film thickness of the deposited material 531 in the second portion 102 divided by the average film thickness of the deposited material in the first portion 101 is generally referred to as the deposition contrast. Therefore, if the deposition contrast is substantially high, the average film thickness of the deposited material 531 in the second portion 102 can be substantially equal to at least the average film thickness of the deposited material 531 in the first portion 101.

[0266] In some non-limiting examples, when deposited on substrate 10, the material of the NIC that can be used as a given deposition material 531 (including, but not limited to, patterning material 411) may have substantially high deposition contrast.

[0267] In some non-limiting examples, there may be a negative correlation between the initial adhesion probability of the deposition of the deposition material 531 and its deposition contrast of at least one of the patterned coating 110 and the patterned material 411 (in some non-limiting examples, when deposited as at least one of some form of film and coating and under conditions similar to the deposition of the patterned coating 110 within the device 100), i.e., a low initial adhesion probability may be highly correlated with a high deposition contrast.

[0268] In some non-limiting examples, if the deposition contrast is substantially high, then little or no deposition of material 531 may be deposited in the first part 101 when the deposition of material 531 is sufficient to form its sealing coating 140 in the second part 102.

[0269] In some non-limiting examples, if the deposition contrast is substantially low, a discontinuous layer 160 of at least one particulate structure 150 of the deposition material 531 deposited in the first portion 101 may be present when the deposition of the deposition material 531 is sufficient to form a closed coating 140 in the second portion 102.

[0270] In some non-limiting examples, when the average layer thickness of the sealing coating 140 of the deposited material 531 in the second portion 102 is substantially small (including but not limited to not exceeding one of about 100 nm, 50 nm, 25 nm and 15 nm, including but not limited to forming nanoparticles (NPs) in the first portion 101), there may be scenarios where it is necessary to form at least one discontinuous layer 160 of at least one particulate structure 150 of the deposited material 531 in the first portion 101, wherein such NPs are required to absorb light, including but not limited to protecting the underlying layer 710 from light with a wavelength not exceeding about 460 nm.

[0271] In some non-limiting examples, in such scenarios, a deposition contrast of approximately 2-100, 4-50, 5-20, and 10-15 may be applicable.

[0272] In some non-limiting examples, materials with substantially low deposition contrast relative to the deposition of deposition material 531 (including, but not limited to, patterned material 411) may have reduced applicability in some scenarios where substantially high deposition contrast is required, including, but not limited to, scenarios where the average layer thickness of deposition material 531 in the first part 101 is large, including, but not limited to, at least one of about 95 nm, 45 nm, 20 nm, 10 nm and 8 nm.

[0273] In some non-limiting examples, materials with substantially low deposition contrast relative to the deposition of deposition material 531 (including, but not limited to, patterned material 411) may have reduced applicability in some scenarios requiring substantially high deposition contrast (including, but not limited to, scenarios where at least one of the closed coating 140 and high-density particulate structure 150 is substantially absent in the first part 101, including, but not limited to, scenarios where the average layer thickness of deposition material 531 in the second part 102 is large (including, but not limited to, at least one of about 95 nm, 45 nm, 20 nm, 10 nm and 8 nm), including, but not limited to, scenarios where substantially no light absorption is required in at least one of the visible spectrum and NIR spectrum (including, but not limited to, scenarios where increased transparency to light with a wavelength of at least about 460 nm is required).

[0274] In some non-limiting examples, when the average layer thickness of the sealing coating 140 of the deposited material 531 in the second part 102 is substantially high (including, but not limited to, at least one of about 95 nm, 45 nm, 20 nm, 10 nm, and 8 nm), materials with substantially low deposition contrast relative to the deposition of the deposited material 531 (including, but not limited to, patterned material 411) may be suitable in some scenarios where at least one of the discontinuous layer 160 of the granular structure 150 of the deposited material 531 in the first part 101 and a low-density granular structure is required. In some non-limiting examples, when the average layer thickness of the deposited material 531 in the second part 102 is substantially high, including, but not limited to, at least one of about 95 nm, 45 nm, 20 nm, 10 nm, and 8 nm, in some scenarios, a deposition contrast between about 2-100, 4-50, 5-20, and 10-15 may be suitable.

[0275] In some non-limiting examples, if a material (including but not limited to patterned material 411) has a substantially high initial adhesion probability to the deposition of at least one of metals and alloys (including but not limited to at least one of Mg, Ag and MgAg), such a material may tend to have a substantially low deposition contrast.

[0276] Surface energy In some non-limiting examples, such as those relating to the materials used herein, characteristic surface energy may generally refer to the surface energy measured from such material.

[0277] In some non-limiting examples, characteristic surface energy can be measured from a surface formed by a material deposited (coated) in the form of a thin film.

[0278] Various methods and theories for determining the surface energy of solids are known.

[0279] In some non-limiting examples, the surface energy can be calculated (derived) based on a series of contact angle measurements, wherein various liquids can be brought into contact with a solid surface to measure the contact angle between the liquid-gas interface and the surface. In some non-limiting examples, the surface energy of the solid surface can be equal to the surface tension of the liquid having the highest surface tension that fully wets the surface.

[0280] In some non-limiting examples, the critical surface tension of the surface can be determined according to the Zissmann method, such as in WAZisman. Advances in Chemistry Further details can be found in 43 (1964), pages 1-51.

[0281] In some non-limiting examples, the characteristic surface energy of the material (including but not limited to patterned material 411) in the coating (including but not limited to patterned coating 110) can be determined by depositing the material as a substantially pure coating (e.g., a coating formed of substantially pure material) on the substrate 10 and measuring its contact angle with a suitable series of probe liquids.

[0282] In some non-limiting examples, the Zissman diagram can be used to determine what will result in complete wetting of the surface (i.e., a contact angle of 0°). θ c The highest surface tension value.

[0283] The materials suitable for providing the patterned coating 110 typically have low surface energy when deposited as a thin film (coating) on ​​a surface. In some non-limiting examples, materials with low surface energy may exhibit low intermolecular forces.

[0284] Without wishing to be bound by any particular theory, it is now assumed that materials with substantially high surface energy are applicable, at least in some applications requiring high-temperature reliability.

[0285] Without wishing to be bound by any particular theory, the inventors have now discovered that a patterned coating 110 comprising a material exhibiting substantially high surface energy when deposited as a thin film can, in some non-limiting examples, form a discontinuous layer 160 of at least one particulate structure 150 of the deposited material 531 in a first portion 101 and a closed coating 140 of the deposited material 531 in a second portion 102, including but not limited to cases where the thickness of the closed coating (in some non-limiting examples) is no more than one of about 100 nm, 75 nm, 50 nm, 25 nm, and 15 nm.

[0286] In some non-limiting examples, a series of samples were fabricated to measure the critical surface tension of surfaces formed from various materials. The measurement results are summarized in Table 6: Table 6

[0287] Based on the aforementioned measurements of the critical surface tension in Table 6 and previous observations regarding one of the substantially closed coatings 140 containing and without Ag in the form of deposited material 531, it has been found that materials forming substantially low surface energy surfaces (in some non-limiting examples, materials with a critical surface tension between about 12 dynes / cm and 23 dynes / cm in some cases) when deposited as coatings (including but not limited to patterned coatings 110) are suitable for forming patterned coatings 110 to inhibit the deposition of deposited material 531 (including but not limited to at least one of Yb, Ag, Mg, and Ag-containing materials (including but not limited to MgAg) thereon).

[0288] Without wishing to be bound by any particular theory, it can be assumed that materials forming surfaces with a surface energy not exceeding (as a non-limiting example) about 13 dynes / cm may be less suitable as patterning materials in some scenarios 411, because such materials may exhibit at least one of substantially poor adhesion to layers surrounding such materials, low melting point, and low sublimation temperature.

[0289] In some non-limiting examples, when deposited as a thin film (coating) on ​​the exposed layer surface 11, the material (including, but not limited to, patterned material 411, which may tend to act as deposited material 531 (including, but not limited to, at least one of metals and alloys, including, but not limited to, Mg, Ag and Ag-containing materials (including, but not limited to, MgAg)) may tend to exhibit substantially low surface energy)

[0290] In some non-limiting examples, when deposited as a thin film (coating) on ​​the exposed layer surface 11, the material (including, but not limited to, patterned material 411) may tend to exhibit substantially low surface energy.

[0291] In some non-limiting examples, materials with substantially low surface energy (including but not limited to patterned material 411) may tend to exhibit substantially low intermolecular forces.

[0292] In some non-limiting examples, there may be scenarios where a patterned material 411 with a substantially low surface energy that is not excessively low may be required.

[0293] In some non-limiting examples, materials with substantially high surface energy (including but not limited to patterned material 411) may be suitable for some scenarios where optical techniques are used to detect films of such materials.

[0294] Without wishing to be bound by any particular theory, it may be assumed that, in some non-limiting examples, materials with substantially high surface energy (including, but not limited to, patterned material 411) may be suitable for some scenarios requiring substantially high temperature reliability.

[0295] In some non-limiting examples, when the average layer thickness of the continuous coating 140 of at least one of the metals and alloys in the second part 102 is substantially low (including but not limited to not exceeding one of about 100 nm, 50 nm, 25 nm and 15 nm), a material with substantially high surface energy (including but not limited to patterned material 411) that can be used as a NIC of at least one of the metals and alloys (including but not limited to Mg, Ag and Ag-containing materials (including but not limited to MgAg)) may be suitable in some scenarios where a discontinuous layer 160 of the particulate structure 150 of at least one of the metals and alloys in the first part 101 is required.

[0296] In some non-limiting examples, when the average layer thickness of the closed coating 140 of the deposited material 531 in the second part 102 is substantially high (including but not limited to at least one of about 95 nm, 45 nm, 20 nm, 10 nm and 8 nm), a material with substantially low surface energy (which can be used as a NIC of the deposited material 531, including but not limited to patterned material 411, the deposited material including but not limited to at least one of metals and alloys, including but not limited to at least one of Yb, Ag, Mg and Ag-containing materials (including but not limited to MgAg)) may be suitable in some scenarios where one of the discontinuous layer 160 of the granular structure 150 of the deposited material 531 in the first part 101 and a low-density granular structure is required.

[0297] In some non-limiting examples, the surface of at least one of the patterned coating 110 and the patterned material 411 (in some non-limiting examples, when deposited as at least one of some form of film and coating and under conditions similar to the deposition of the patterned coating 110 within a device 100 containing the compound described herein) may exhibit a surface energy not exceeding one of about 24 dynes / cm, 22 dynes / cm, 20 dynes / cm, 18 dynes / cm, 16 dynes / cm, 15 dynes / cm, 13 dynes / cm, 12 and 11 dynes / cm.

[0298] In some non-limiting examples, and in various non-limiting examples, the surface values ​​herein may correspond to such values ​​measured at approximately normal temperature and pressure (NTP), which may correspond to a temperature of 20°C and an absolute pressure of 1 atm.

[0299] In some non-limiting examples, the surface energy may be at least one of about 6 dynes / cm, 7 dynes / cm and 8 dynes / cm.

[0300] In some non-limiting examples, the surface energy may be one of about 10 dynes / cm to 20 dynes / cm and 13 dynes / cm to 19 dynes / cm.

[0301] temperature Glass transition temperature In some non-limiting examples, at least one of the patterned coating 110 and the patterned material 411 (in some non-limiting examples, when deposited as at least one of some form of film and coating and under conditions similar to the deposition of the patterned coating 110 within the device 100) may have a glass transition temperature of at least one of about 300°C, 200°C, 170°C, 150°C, 130°C, 120°C, 110°C, and 100°C, and not exceeding one of about 20°C, 0°C, -20°C, -30°C, and -50°C.

[0302] Sublimation temperature In some non-limiting examples, materials with substantially low intermolecular forces (including, but not limited to, patterned material 411) may tend to exhibit substantially low sublimation temperatures.

[0303] In some non-limiting examples, materials with substantially low sublimation temperatures (including, but not limited to, patterned material 411) may have reduced applicability to manufacturing processes that may require substantially precise control of the average layer thickness of the sealed coating 140 of the deposited material film.

[0304] In some non-limiting examples, materials with sublimation temperatures not exceeding one of about 140°C, 120°C, 110°C, 100°C, and 90°C (including but not limited to patterned material 411) may tend to encounter constraints on at least one of the deposition rate and average layer thickness of the film, which includes such materials that can be deposited using known deposition methods (including but not limited to vacuum thermal evaporation).

[0305] In some non-limiting examples, materials with substantially high sublimation temperatures (including, but not limited to, patterned material 411) may be suitable for some scenarios where substantially high precision is required in controlling the average layer thickness of films comprising such materials.

[0306] In some non-limiting examples, the patterning material may have a sublimation temperature between about 100°C-320°C, 120°C-300°C, 140°C-280°C, and 150°C-250°C. In some non-limiting examples, such a sublimation temperature may allow the patterning material 411 to be deposited substantially easily as a coating using PVD.

[0307] In some non-limiting examples, materials with substantially low intermolecular forces may exhibit substantially low sublimation temperatures.

[0308] In some non-limiting examples, materials with substantially low sublimation temperatures (including, but not limited to, patterned material 411) may have reduced applicability to manufacturing processes that may require substantially precise control of the average layer thickness of the closed coating 140 of the material.

[0309] In some non-limiting examples, materials with sublimation temperatures not exceeding one of about 140°C, 120°C, 110°C, 100°C, and 90°C (including but not limited to patterned material 411) may tend to encounter constraints on at least one of the deposition rate and average layer thickness of the film, which includes such materials that can be deposited using known deposition methods (including but not limited to vacuum thermal evaporation).

[0310] In some non-limiting examples, materials with substantially high sublimation temperatures (including, but not limited to, patterned material 411) may be suitable for some scenarios where substantially high precision is required in controlling the average layer thickness of films comprising such materials.

[0311] The sublimation temperature of a material (including, but not limited to, patterned material 411) can be determined using a variety of methods readily apparent to those skilled in the art, including, but not limited to, by sublimation in an evaporation source under substantially high vacuum (in some non-limiting examples, at approximately 10 °C). -4 Heating material in a crucible (including, but not limited to, a container) and by determining the achievable temperature, to perform at least one of the following: • Observe when the material begins to deposit onto the exposed layer surface 11 on the QCM, which is installed at a fixed distance from the crucible; • Observe a specific deposition rate on the exposed layer surface 11 of a QCM mounted at a fixed distance from the crucible; in some non-limiting examples, it is 0.1 Å / s; and • The threshold vapor pressure of the material is reached, which in some non-limiting examples is about 10. -4 To and 10 -5 One of the entrusted ones.

[0312] In some non-limiting examples, in order to determine the sublimation temperature, the QCM can be installed at a distance of approximately 65 cm from the crucible.

[0313] In some non-limiting examples, the patterned material 411 may have a sublimation temperature between about 100°C-320°C, 100°C-300°C, 120°C-300°C, 100°C-250°C, 140°C-280°C, 120°C-230°C, 130°C-220°C, 140°C-210°C, 140°C-200°C, 150°C-250°C, and 140°C-190°C.

[0314] Melting point In some non-limiting examples, materials with substantially low intermolecular forces (including, but not limited to, patterned material 411) may tend to exhibit substantially low melting points.

[0315] In some non-limiting examples, materials with substantially low melting points (including, but not limited to, patterned material 411) may have reduced applicability in some scenarios where significant temperature reliability is required for temperatures not exceeding one of about 60°C, 80°C, and 100°C, in some non-limiting examples, because of the change in the physical properties of such materials at operating temperatures close to their melting points.

[0316] In some non-limiting examples, materials with a melting point of about 120°C may have reduced applicability in some scenarios where substantially high temperature reliability (including, but not limited to, at least about 100°C) is required.

[0317] In some non-limiting examples, materials with substantially high melting points (including, but not limited to, patterned material 411) may be suitable for some scenarios where substantially high temperature reliability is required.

[0318] In some non-limiting examples, at least one of the patterned coating 110 and its compounds may have a melting temperature of at least one of about 90°C, 100°C, 120°C, 140°C, 160°C, 180°C and 200°C at atmospheric pressure.

[0319] Example In some non-limiting examples, differential scanning calorimetry was used to determine the melting point of selected example materials. Specifically, the melting point of each sample was determined during a second heating cycle at a heating rate of 10 °C / min. The measurement results are summarized in Table 7: Table 7

[0320] Cohesive energy According to Young's equation (Equation 14), the cohesive energy (fracture toughness / cohesive strength) of a material tends to be proportional to its surface energy (see Young, Thomas (1805) "An essay on the cohesion of fluids"). Philosophical Transactions of the Royal Society of London , 95: 65-87).

[0321] According to Lindemann's criteria, the cohesive energy of a material may tend to be proportional to its melting temperature (see Nanda, KK, Sahu, SN, and Behera, SN (2002), "Liquid-drop model for the size-dependent melting of low-dimensional systems"). Phys.Rev. A. 66 (1):013208).

[0322] In some non-limiting examples, materials with substantially low intermolecular forces (including, but not limited to, patterned material 411) may tend to exhibit substantially low cohesive energy.

[0323] In some non-limiting examples, materials with substantially low cohesive energy (including, but not limited to, patterned material 411) may have reduced applicability in some scenarios requiring significant fracture toughness (including, but not limited to, devices 100 that may tend to withstand at least one of shear and bending stresses during at least one of manufacturing and use), because such materials may tend to crack (fracture) in such scenarios. In some non-limiting examples, materials with cohesive energy not exceeding about 30 dynes / cm (including, but not limited to, patterned material 411) may have reduced applicability in some scenarios of devices 100 fabricated on flexible substrate 10.

[0324] In some non-limiting examples, materials with substantially high cohesive energy (including but not limited to patterned material 411) may be suitable for some scenarios where substantially high reliability is required under at least one of shear stress and bending stress, including but not limited to devices 100 fabricated on flexible substrate 10.

[0325] In some non-limiting examples, materials with substantially low but not excessively low surface energy (including, but not limited to, patterned material 411) may be suitable for some scenarios where significant reliability is required under at least one of shear and bending stresses, including, but not limited to, devices 100 fabricated on flexible substrate 10.

[0326] Example In some non-limiting examples, a series of samples were fabricated to determine the point of failure upon peeling or delamination. Specifically, each sample was fabricated by depositing an example material layer of approximately 50 nm thickness as a patterned coating 110 on a glass substrate 10, followed by a layer of approximately 50 nm thickness of an organic material typically used as a capping layer (CPL). Adhesive tape was then applied to the exposed surface 11 of the CPL of each sample. The tape was peeled off to induce delamination (cohesive failure) in each sample, and the peeled tape and the delaminated samples were analyzed to determine at which layer (including, but not limited to, the interface with adjacent layers) the failure occurred. Samples with failure within the patterned coating 110 (including, but not limited to, at the interface between the patterned coating 110 and adjacent layers) were identified as failing the delamination test, and samples with failure within the CPL (i.e., cohesive failure within the CPL) were identified as passing the delamination test. Table 8 summarizes the results of this analysis.

[0327] Table 8

[0328] Based on the aforementioned analysis of the layered test and previous observations regarding the melting point and critical surface tension of the exemplary materials, it was found that samples manufactured with a patterned coating 110 including EM-8 as patterning material 411 (which exhibits at least the melting point and critical surface tension of both EM-10 and EM-11) showed destruction within the CPL as the CPL separated to form a new surface, while samples manufactured with patterned coatings 110 including EM-10 and EM-11 as patterning materials 411 respectively showed destruction within the patterned coating 110 as the patterned coating 110 separated to form a new surface.

[0329] Without being bound by any particular theory, it can be assumed that this is because when the patterned material 411 includes EM-8, the cohesive energy of the CPL does not exceed the cohesive energy of the patterned coating 110 and the adhesive energy at the interface between the patterned coating 110 and the CPL. Conversely, for such samples, each patterned coating 110 formed from a patterned material 411 including one of EM-4, EM-10, EM-11, EM-12, EM-13, and EM-14 exhibits a cohesive energy not exceeding both the cohesive energy of the CPL and the adhesive energy at the interface between the patterned coating 110 and the CPL, such that delamination caused by cohesive failure occurs in the two samples within the patterned coating 110.

[0330] Optical / bandgap In this disclosure, semiconductor materials can be described as materials that typically exhibit a band gap. In some non-limiting examples, the band gap may be formed between the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) of the semiconductor material. Semiconductor materials may therefore tend to exhibit conductivity substantially no greater than that of conductive materials (including, but not limited to, at least one of metals and alloys), but substantially at least that of insulating materials (including, but not limited to, glass). In some non-limiting examples, the semiconductor material may include organic semiconductor materials. In some non-limiting examples, the semiconductor material may include inorganic semiconductor materials.

[0331] In some non-limiting examples, including but not limited to the optical bandgap of patterned material 411, the optical bandgap may tend to correspond to the HOMO-LUMO bandgap of that material.

[0332] In some non-limiting examples, materials with substantially large / wide optical (HOMO-LUMO bandgap) (including but not limited to patterned material 411) may tend to exhibit substantially weak, including but not limited to, photoluminescence in at least one of the deep blue region of the visible spectrum, the near-UV spectrum, the visible spectrum, and the NIR spectrum.

[0333] In some non-limiting examples, materials with substantially small HOMO-LUMO band gaps may be applicable in some scenarios where optical techniques are used to detect films of materials.

[0334] In some non-limiting examples, the optical bandgap of the patterned material 411 may be wider than the photon energy of the light emitted from the source, such that the patterned material 411 does not undergo photoexcitation when subjected to such light.

[0335] Refractive index and extinction coefficient In some non-limiting examples, at least one of the patterned coating 110 and the patterned material 411 (in some non-limiting examples, when deposited as at least one of some form of film and coating and under conditions similar to the deposition of the patterned coating 110 within the device 100) may have a low refractive index.

[0336] In some non-limiting examples, at least one of the patterned coating 110 and the patterned material 411 (in some non-limiting examples, when deposited as at least one of some form of film and coating and under conditions similar to the deposition of the patterned coating 110 within the device 100) may have a refractive index for light at a wavelength of 550 nm that may not exceed one of about 1.55, 1.5, 1.45, 1.43, 1.4, 1.39, 1.37, 1.35, 1.32 and 1.3.

[0337] In some non-limiting examples, the refractive index of the patterned coating 110 may not exceed about 1.7. In some non-limiting examples, the refractive index of the patterned coating 110 may not exceed one of about 1.6, 1.5, 1.4, and 1.3. In some non-limiting examples, the refractive index of the patterned coating 110 may be one of about 1.2-1.6, 1.2-1.5, and 1.25-1.45. As further described in the various non-limiting examples above, the patterned coating 110 exhibiting a substantially low refractive index may be suitable in some scenarios for enhancing (including but not limited to) at least one of the optical properties and performance of the device 100 by enhancing the external coupling of light emitted by the optoelectronic device 200.

[0338] Without being bound by any particular theory, it has been observed that providing a patterned coating 110 with a substantially low refractive index can (at least in some devices 100) increase the transmittance of external light through its second portion 102. In some non-limiting examples, when the patterned coating 110 has a substantially low refractive index relative to a similarly constructed device 100 in which such a low-refractive-index patterned coating 110 is not provided, a device 100, including an air gap, may exhibit substantially high transmittance when arranged near the patterned coating 110.

[0339] In some non-limiting examples, a series of samples were fabricated to measure the refractive index of coatings formed from some of the various example materials at a wavelength of 550 nm. The measurement results are summarized in Table 9 below: Table 9

[0340] Based on the aforementioned measurements of refractive index in Table 9, and the presence and absence of these samples... Ag The basically closed coating140 One of the observations found that materials forming low-refractive-index coatings (in some non-limiting examples, materials with a refractive index not exceeding one of about 1.4 and 1.38) may be suitable in some scenarios where patterned coating 110 is formed to substantially suppress the deposition of deposited material 531 (including, but not limited to, at least one of metals and alloys, including, but not limited to, at least one of Yb, Ag, Mg and Ag-containing materials (including, but not limited to, MgAg)) thereon.

[0341] In some non-limiting examples, at least one of the patterned coating 110 and the patterned material 411 (in some non-limiting examples, when deposited as at least one of some form of film and coating and under conditions similar to the deposition of the patterned coating 110 within the device 100) may have a low refractive index.

[0342] In some non-limiting examples, at least one of the patterned coating 110 and the patterned material 411 (in some non-limiting examples, when deposited as at least one of some form of film and coating and under conditions similar to the deposition of the patterned coating 110 within the device 100) may have a refractive index for light at a wavelength of 550 nm that may not exceed one of about 1.55, 1.5, 1.45, 1.43, 1.4, 1.39, 1.37, 1.35, 1.32 and 1.3.

[0343] In some non-limiting examples, the patterned coating 110 may be at least one of being substantially transparent and light-transmitting.

[0344] In some non-limiting examples, at least one of the patterned coating 110 and the patterned material 411 (in some non-limiting examples, when deposited as at least one of some form of film and coating and under conditions similar to the deposition of the patterned coating 110 within the device 100) may have an extinction coefficient of no more than about 0.01 for light at wavelengths of at least about 600 nm, 500 nm, 460 nm, 420 nm and 410 nm.

[0345] In some non-limiting examples, at least one of the patterned coating 110 and the patterned material 411 (in some non-limiting examples, when deposited as at least one of some form of film and coating and under conditions similar to the deposition of the patterned coating 110 within the device 100) may have an extinction coefficient of at least about 0.05, 0.1, 0.2 and 0.5 for light at wavelengths not exceeding one of about 400 nm, 390 nm, 380 nm and 370 nm.

[0346] In this way, at least one of the patterned coating 110 and the patterned material 411 (when deposited as at least one of some form of film and coating and under conditions similar to the deposition of the patterned coating 110 within the device 100) can absorb light in the UVA spectrum incident on the device 100, thereby reducing the possibility that light in the UVA spectrum may impose constraints on at least one of the device performance, device stability, device reliability, and device lifetime.

[0347] In some non-limiting examples, the patterned coating 110 may exhibit an extinction coefficient of no more than one of about 0.1, 0.08, 0.05, 0.03 and 0.01 in the visible spectrum.

[0348] Photoluminescence, absorption and other optical effects In some non-limiting examples, photoluminescence of at least one of the coating and the material can be observed through a photoexcitation process. During the photoexcitation process, at least one of the coating and the material can be subjected to light emitted by a light source (including but not limited to a UV lamp).

[0349] When the emitted light is absorbed by at least one of the coating and the material, electrons in the at least one of the coating and the material can be temporarily excited. After excitation, one or more relaxation processes may occur, including but not limited to at least one of fluorescence and phosphorescence, wherein light may be emitted from at least one of the coating and the material.

[0350] During this process, light emitted from at least one of the coating and the material can be detected, for example, by a photodetector to characterize the photoluminescence properties of at least one of the coating and the material.

[0351] As used herein, the wavelength of photoluminescence associated with at least one of the coatings and materials can generally refer to the wavelength of light emitted by at least one of the coatings and materials due to the relaxation of electrons from an excited state. As will be understood by those skilled in the art, the wavelength of light emitted by at least one of the coatings and materials due to a photoexcitation process may, in some non-limiting examples, be longer than the wavelength of the radiation used to induce photoexcitation. Various techniques known in the art can be used to detect photoluminescence, including but not limited to fluorescence microscopy.

[0352] In some non-limiting examples, the optical band gap of various coatings / materials may correspond to the band gap of the coating / material from which one of the light is absorbed and emitted during the photoexcitation process.

[0353] In some non-limiting examples, photoluminescence can be detected by exposing the coating / material to light having a wavelength corresponding to the UV spectrum (in some non-limiting examples, such as one of UVA and UVB). In some non-limiting examples, the light used to initiate photoexcitation may have a wavelength of about 365 nm.

[0354] In some non-limiting examples, the patterned material 411 may not exhibit photoluminescence at any wavelength corresponding to the visible spectrum.

[0355] In some non-limiting examples, the patterned material 411 may not exhibit photoluminescence when subjected to light having a wavelength of at least about 300 nm, 320 nm, 350 nm and 365 nm.

[0356] As used herein, at least one of the photoluminescent coatings and materials may be at least one of the coatings and materials that exhibit photoluminescence at a certain wavelength when irradiated with excitation radiation of a certain wavelength. In some non-limiting examples, at least one of the photoluminescent coatings and materials may exhibit photoluminescence at wavelengths exceeding about 365 nm when irradiated with excitation radiation of a wavelength of 365 nm, which is the wavelength of radiation sources commonly used in fluorescence microscopy.

[0357] At least one of the photoluminescent coatings and materials can be detected on the substrate 10 using standard optical techniques (including, but not limited to, fluorescence microscopy), which can determine the presence of at least one of the coatings and materials.

[0358] In some non-limiting examples, the coating (including, but not limited to, patterned coating 110) may exhibit photoluminescence by including materials that exhibit photoluminescence.

[0359] In some non-limiting examples, the presence of such patterned coating 110 can be detected (observed) using conventional characterization techniques such as fluorescence microscopy when depositing the patterned coating 110.

[0360] In some non-limiting examples, the coating (including, but not limited to, patterned coating 110) may exhibit photoluminescence at wavelengths corresponding to at least one of the UV spectrum and the visible spectrum, including, but not limited to, by comprising a material exhibiting photoluminescence. In some non-limiting examples, photoluminescence may occur at wavelengths (ranges) corresponding to the UV spectrum (including, but not limited to, one of the UVA spectrum and the UVB spectrum). In some non-limiting examples, photoluminescence may occur at wavelengths (ranges) corresponding to the visible spectrum. In some non-limiting examples, photoluminescence may occur at wavelengths (ranges) corresponding to one of deep blue and near-UV.

[0361] In some non-limiting examples, the material of the patterned coating 110 may exhibit photoluminescence in at least one of the following: conjugated bonds, aryl moieties, electron-donating / electron-withdrawing groups, and heavy metal complexes.

[0362] In some non-limiting examples, a coating (including but not limited to patterned coating 110) consisting of a material (including but not limited to patterned material 411) having substantially weak to no photoluminescence (absorption) in a wavelength range of at least about 365 nm and 460 nm may tend not to act as either a photoluminescent coating or an absorbing coating, and may be suitable for some scenarios where substantially high transparency is required in at least one of the visible spectrum and the NIR spectrum.

[0363] In some non-limiting examples, such materials may tend to exhibit substantially low photoluminescence when exposed to light with a wavelength of approximately 365 nm, which is the wavelength of radiation sources commonly used in fluorescence microscopy. The presence of such materials (including, but not limited to, patterned material 411), particularly when deposited as thin films in some non-limiting examples, can reduce applicability in scenarios requiring typical optical detection techniques (including, but not limited to, fluorescence microscopy). This may impose constraints on scenarios where such materials can be selectively deposited, for example, on portions of substrate 10 via an FMM, as there may be scenarios where the presence of such materials needs to be determined after material deposition.

[0364] In some non-limiting examples, materials having substantially low to no absorption at wavelengths of at least about 365 nm and 460 nm may be suitable for some scenarios where substantially high transparency is required in at least one of the visible and NIR spectra.

[0365] In some non-limiting examples, at least one of the patterned coating 110 and the patterned material 411 (in some non-limiting examples, when deposited as at least one of some form of film and coating and under conditions similar to the deposition of the patterned coating 110 within the device 100) may not substantially attenuate light passing through it in at least the visible spectrum.

[0366] In some non-limiting examples, at least one of the patterned coating 110 and the patterned material 411 (when deposited as at least one of some form of film and coating and under conditions similar to the deposition of the patterned coating 110 within the device 100) may substantially not attenuate light passing through it in at least one of the IR and NIR spectra.

[0367] In this way, at least one of the patterned coating 110 and the patterned material 411 (when deposited as at least one of some form of film and coating and under conditions similar to the deposition of the patterned coating 110 within the device 100) can absorb light in the UVA spectrum incident on the device 100, thereby reducing the possibility that light in the UVA spectrum may impose constraints on at least one of the device performance, device stability, device reliability, and device lifetime.

[0368] In some non-limiting examples, the patterned coating 110 may serve as an optical coating.

[0369] In some non-limiting examples, the patterned coating 110 may modify at least one of at least one property and at least one characteristic of the light (including, but not limited to, photons) emitted by the device 100. In some non-limiting examples, the patterned coating 110 may exhibit a degree of haze, resulting in the scattering of the emitted light. In some non-limiting examples, the patterned coating 110 may include a crystalline material for scattering light transmitted through it. In some non-limiting examples, such scattering of light may be beneficial for enhancing external coupling of light from the device 100. In some non-limiting examples, the patterned coating 110 may initially be deposited as a substantially amorphous (including, but not limited to, substantially amorphous) coating, and subsequently, after its deposition, the patterned coating 110 may become crystalline and subsequently used for optical coupling.

[0370] In some non-limiting examples, the patterned material 411 may exhibit insignificant, including but not limited to, no, absorption when subjected to light having a wavelength of at least about 300 nm, 320 nm, 350 nm and 365 nm.

[0371] In some non-limiting examples, the patterned coating 110 may not exhibit any significant light absorption at any wavelength corresponding to the visible spectrum.

[0372] Average layer thickness In some non-limiting examples, the average layer thickness of the patterned coating 110 may be no more than one of about 10 nm, 8 nm, 7 nm, 6 nm and 5 nm.

[0373] weight Without wishing to be bound by any particular theory, it can be assumed that for compounds suitable for forming surfaces with substantially low surface energy, there may be scenarios where, in at least some applications, the molar weight of such compounds is required to be one of approximately 800 g / mol-3,000 g / mol, 900 g / mol-2,000 g / mol, 900 g / mol-1,800 g / mol, and 900 g / mol-1,600 g / mol.

[0374] In some non-limiting examples, the molar weight of the compound of at least one patterned material 411 may not exceed about 6,000 g / mol. In some non-limiting examples, the molar weight of the compound may be one of about 6,000 g / mol, 5,500 g / mol, 5,000 g / mol, 4,500 g / mol, 4,300 g / mol, and 4,000 g / mol.

[0375] In some non-limiting examples, the molar weight of the compound may be one of at least about 500 g / mol, 550 g / mol, 580 g / mol, 650 g / mol, 750 g / mol, 1,000 g / mol, 1,200 g / mol, 1,300 g / mol, 1,500 g / mol, 1,700 g / mol, 2,000 g / mol, 2,200 g / mol, and 2,500 g / mol.

[0376] In some non-limiting examples, the molar weight of the compound may be one of about 800 g / mol-4,000 g / mol, 900 g / mol-2,000 g / mol, 900 g / mol-1,800 g / mol, and 900 g / mol-1,600 g / mol.

[0377] In some non-limiting examples, the percentage of the molar weight of this compound attributable to the presence of F atoms may be one of approximately 40%-90%, 45%-85%, 50%-80%, 55%-75%, and 60%-75%. In some non-limiting examples, F atoms may constitute the majority of the molar weight of this compound.

[0378] Interrelationships between patterned coating properties Without being bound by any particular theory, it can be assumed that an exposed layer surface 11 exhibiting a low initial adhesion probability relative to the deposited material 531 (including, but not limited to, at least one of metals and alloys, including but not limited to, Yb, Ag, Mg, and Ag-containing materials (including but not limited to MgAg)) can exhibit high transmittance. Without being bound by any particular theory, it can be assumed that an exposed layer surface 11 exhibiting a high adhesion probability relative to the deposited material 531 (including, but not limited to, at least one of metals and alloys, including but not limited to, Yb, Ag, Mg, and Ag-containing materials (including but not limited to MgAg)) can exhibit low transmittance.

[0379] In some non-limiting examples, if the material has substantially high surface energy, the material including but not limited to patterned material 411 may tend to have substantially high initial adhesion probability relative to the deposition of the deposited material, including but not limited to at least one of metals and alloys, including but not limited to at least one of Yb, Ag, Mg and Ag-containing materials (including but not limited to MgAg).

[0380] In some non-limiting examples, the patterned coating 110, having substantially low surface energy and substantially high melting point, may be suitable for some scenarios requiring high temperature reliability. In some non-limiting examples, considering that a single material with low surface energy may tend to exhibit a low melting point, achieving this combination from a single material may be challenging.

[0381] In some non-limiting examples, patterned material 411 having substantially low surface tension that is not excessively low may be suitable for some scenarios requiring substantially high melting points, including but not limited to about 15 dynes / cm to 22 dynes / cm.

[0382] In some non-limiting examples, materials with substantially low but not excessively low surface tension (including, but not limited to, patterned material 411) may be suitable for some scenarios requiring substantially high sublimation temperatures.

[0383] In some non-limiting examples, coatings (including, but not limited to, patterned coating 110, which consists of materials (including, but not limited to, patterned material 411) having substantially low surface energy and substantially high sublimation temperature) may be suitable in some scenarios where substantially high precision is required in controlling the average layer thickness of films including such materials.

[0384] Without wishing to be bound by any particular theory, it may be assumed that the suitability of materials forming the exposed layer surface 11 with a surface energy (in some non-limiting examples) not exceeding one of about 13 dynes / cm, 14 dynes / cm, and 15 dynes / cm may be reduced in some scenarios as patterning materials 411, because such materials may exhibit at least one of substantially low adhesion to layers surrounding such materials, substantially low melting point, and substantially low sublimation temperature.

[0385] Without wishing to be bound by any particular theory, it may be assumed that the suitability of materials forming the exposed layer surface 11 with a surface energy (in some non-limiting examples) not exceeding one of about 13 dynes / cm, 15 dynes / cm, and 17 dynes / cm may be reduced in some scenarios as patterning materials 411, because such materials may exhibit at least one of substantially poor cohesive strength, substantially low melting point, and substantially low sublimation temperature.

[0386] Without wishing to be bound by any particular theory, it may be assumed that such compounds (including, but not limited to, at least one patterning material 411) can exhibit at least one property that may be suitable in certain circumstances for forming at least one of coatings and layers having at least one of the following: substantially high melting point, in some non-limiting examples, at least 100°C; substantially low surface energy; and substantially amorphous structure, in some non-limiting examples, when deposited using a vacuum-based thermal evaporation process.

[0387] In some non-limiting examples, coatings (including, but not limited to, patterned coating 110) having substantially low surface energy, substantially high cohesive energy, and substantially high melting point may be suitable for scenarios requiring substantially high reliability under various conditions. In some non-limiting examples, considering that a single material with substantially low surface energy may tend to exhibit substantially low cohesive energy and substantially low melting point, achieving such a combination from a single material may be challenging.

[0388] In some non-limiting examples, materials with substantially low surface energy and substantially high cohesive energy (including, but not limited to, patterned material 411) may be suitable for scenarios requiring substantially high reliability under at least one of shear stress and bending stress. In some non-limiting examples, considering that films formed substantially from a single material with substantially low surface energy may tend to exhibit substantially low cohesive energy, achieving such a combination from a single material may be challenging.

[0389] In some non-limiting examples, materials with substantially low surface energy (including but not limited to patterned material 411) may tend to exhibit at least one of substantially large optical band gap and substantially wide optical band gap.

[0390] Typically, materials with low surface energy can exhibit an optical bandgap that is large or wide, which, as a non-limiting example, may correspond to the HOMO-LUMO bandgap of the material.

[0391] It has now been found that patterned coatings 110 formed from compounds exhibiting substantially low surface energy can also exhibit substantially low refractive index.

[0392] In some non-limiting examples, at least one of the patterned coating 110 and the patterned material 411 may exhibit a surface energy of no more than about 25 dynes / cm and a refractive index of no more than about 1.45. In some non-limiting examples, at least one of the patterned coating 110 and the patterned material 711 may comprise a material exhibiting a surface energy of no more than about 20 dynes / cm and a refractive index of no more than about 1.4.

[0393] In some non-limiting examples, materials with substantially low surface energy (including, but not limited to, patterned material 411) may be suitable for some scenarios where substantially weak to no photoluminescence and absorption are required in a wavelength range of at least about 365 nm and 460 nm.

[0394] In some non-limiting examples, materials (including, but not limited to, patterned material 411) having at least one of a substantially large optical band gap (and HOMO-LUMO band gap) and a substantially wide optical band gap (and HOMO-LUMO band gap) may tend to exhibit substantially weak to no photoluminescence in at least one of the deep blue region of the visible spectrum, the near-UV spectrum, the visible spectrum, and the NIR spectrum.

[0395] Without wishing to be bound by any particular theory, it has been observed that compounds having substantially low surface energy and a molar weight not exceeding about 1,000 g / mol can exhibit at least one of the following: a substantially low sublimation temperature not exceeding about 100 °C, and a substantially low melting point not exceeding either about 100 °C or 80 °C, which may make the compounds have reduced applicability in certain circumstances.

[0396] Without wishing to be bound by any particular theory, it can be assumed that for compounds suitable for forming surfaces with substantially low surface energy, there may be scenarios where, in some non-limiting examples, the molar weight of such compounds is one of approximately 500 g / mol-6,000 g / mol, 550 g / mol-5,500 g / mol, 580 g / mol-4,500 g / mol, 580 g / mol-4,000 g / mol, 650 g / mol-3,800 g / mol, 750 g / mol-3,500 g / mol, and 1,000 g / mol-3,000 g / mol.

[0397] At least some materials having at least one of a large and a wide optical bandgap and a HOMO-LUMO bandgap may exhibit substantially weak to no photoluminescence in at least one of the visible spectrum, its deep B (blue) region, and the near-UV spectrum. In some non-limiting examples, materials having a substantially small HOMO-LUMO bandgap may be suitable for applications using optical techniques to detect films of materials. In some non-limiting examples, materials with higher surface energy may be suitable for applications using optical techniques to detect films of materials.

[0398] In some non-limiting examples, materials with substantially large HOMO-LUMO band gaps may be suitable for some scenarios where weak to no photoluminescence or absorption is required in the wavelength range of at least about 365 nm and 460 nm.

[0399] Doping In some non-limiting examples, the patterned coating 110 may exhibit (including, but not limited to) at least one nucleation site for the deposited material 531 due to at least one of the patterned material 411 used and the deposition environment.

[0400] In some non-limiting examples, the patterned coating 110 may be doped (including, but not limited to, with at least one of covering and supplementing with another material, which may act as at least one of seed crystals or heterogeneous material to serve as such nucleation sites for the deposited material 531. In some non-limiting examples, such another material may include NPC 720 material. In some non-limiting examples, such another material may include at least one of organic materials (in some non-limiting examples, polycyclic aromatic compounds) and materials containing at least one of non-metallic elements (including, but not limited to, at least one of O, S, N, and C, which may be contaminants in at least one of the source material, the equipment used for deposition, and the vacuum chamber environment). In some non-limiting examples, such another material may be deposited as a single layer of a small fraction of its thickness to avoid forming its sealing coating 140. Instead, the monomers of such another material may tend to be spaced apart in a laterally oriented manner to form discrete nucleation sites for the deposited material.

[0401] Various materials for forming patterned coatings In some non-limiting examples, a patterned coating 110 of a single patterned material 411 is formed relative to the deposition of a deposited material 531, which includes, but is not limited to, at least one of a given metal and a given alloy, including, but not limited to, Yb, Ag, Mg and Ag-containing materials (including, but not limited to, MgAg), satisfying constraints of at least one material property selected from at least one of the following: initial adhesion probability, transmittance, deposition contrast, surface energy, glass transition temperature, melting point, sublimation temperature, evaporation temperature, cohesive energy, optical band gap, photoluminescence, refractive index, extinction coefficient, absorption, other optical effects, average layer thickness, molar weight, and composition. For a given scenario, the substantially complex interrelationships between these various material properties may present challenges.

[0402] In some non-limiting examples, the patterned coating 110 may include multiple materials. In some non-limiting examples, the patterned coating 110 may include a first material and a second material. In some non-limiting examples, the patterned coating 110 may include additional materials, including but not limited to at least one of a third material and a fourth material.

[0403] In some non-limiting examples, when deposited as a thin film, at least one of a variety of materials of the patterned coating 110 can be used as the NIC.

[0404] In some non-limiting examples, when deposited as a thin film, at least one of the various patterning materials 411 may be used as a NIC. In some non-limiting examples, at least one of the patterning materials 411 may not be used as a NIC. In some non-limiting examples, when deposited as a thin film, such at least one of the patterning materials 411 that does not act as a NIC may form NPC720. In some non-limiting examples, the presence of the first material in the patterned coating 110 may result in an increased initial adhesion probability of the patterned coating compared to a case where the patterned coating 110 is formed of a second material and substantially without the first material.

[0405] In some non-limiting examples, at least one of the first material and the second material may include a molecule, which includes at least one of a cage structure, a ring structure, and an organic-inorganic hybrid structure.

[0406] In some non-limiting examples, the host may include a fully condensed oligomer. In some non-limiting examples, the molecular structure of the host may be substantially free of any partially condensed (including but not limited to uncondensed) portions.

[0407] In some non-limiting examples, the first material may form NPC 720 when deposited as a thin film, and the second material may form NIC when deposited as a thin film.

[0408] In some non-limiting examples, multiple patterned materials 411, each satisfying a constraint of at least one material property, may be applicable in some scenarios to achieve a desired combination of properties of the patterned coating 110, including but not limited to at least one of the following: High patterned contrast, It has a low tendency to crystallize in the form of thin films. The risk of cohesive failure and / or delamination is low in thin film form. The patterned coating 110 exhibits a photoluminescence response, and At least one particulate structure 150 is formed on the exposed surface 11 of the patterned coating 110.

[0409] In some non-limiting examples, at least one of the materials of the patterned coating 110 may be adapted to form a surface with low surface energy when deposited as a thin film. In some non-limiting examples, when deposited as a thin film, the first material may be adapted to form a surface with a lower surface energy than that provided by a thin film including the second material.

[0410] In some non-limiting examples, the patterned coating 110 may exhibit photoluminescence by including, but not limited to, a material that exhibits photoluminescence.

[0411] In some non-limiting examples, the first material may exhibit photoluminescence at wavelengths corresponding to the visible spectrum, and the second material may not exhibit significant photoluminescence at wavelengths corresponding to the visible spectrum.

[0412] In some non-limiting examples, the second material may exhibit substantially no photoluminescence at any wavelength corresponding to the visible spectrum. In some non-limiting examples, the second material may not exhibit photoluminescence when exposed to light having a wavelength of at least one of about 300 nm, 320 nm, 350 nm, and 365 nm. In some non-limiting examples, the second material may exhibit minimal to undetectable absorption when exposed to such light.

[0413] In some non-limiting examples, the second optical bandgap of the second material may be wider than the photon energy of the light emitted from the source, such that the second material does not undergo photoexcitation when exposed to such light. However, in some non-limiting examples, the patterned coating 110 containing such a second material may still exhibit photoluminescence when exposed to light, due to the photoluminescence exhibited by the first material. In some non-limiting examples, the presence of the patterned coating 110 can be detected using conventional characterization techniques such as fluorescence microscopy during the deposition of the patterned coating 110.

[0414] In some non-limiting examples, the first material may have a first optical bandgap, and the second material may have a second optical bandgap. In some non-limiting examples, the second optical bandgap may exceed the first optical bandgap. In some non-limiting examples, the difference between the first and second optical bandgap may exceed one of about 0.3 eV, 0.5 eV, 0.7 eV, 1 eV, 1.3 eV, 1.5 eV, 1.7 eV, 2 eV, 2.5 eV, and 3 eV.

[0415] In some non-limiting examples, the first optical bandgap may be no more than one of about 4.1 eV, 3.5 eV, and 3.4 eV. In some non-limiting examples, the second optical bandgap may exceed one of about 3.4 eV, 3.5 eV, 4.1 eV, 5 eV, and 6.2 eV.

[0416] In some non-limiting examples, at least one of the first optical bandgap and the second optical bandgap may correspond to the HOMO-LUMO bandgap.

[0417] In some non-limiting examples, the optical bandgap of at least one of the various coatings and materials (including, but not limited to, at least one of a first optical bandgap and a second optical bandgap) may correspond to the bandgap of at least one of the coatings and materials from which light is absorbed and emitted during the photoexcitation process.

[0418] In some non-limiting examples, the concentration (including but not limited to weight) of the first material in the patterned coating 110 may not exceed the concentration of the second material in the patterned coating 110. In some non-limiting examples, the patterned coating 110 may include at least about 0.1 wt%, 0.2 wt%, 0.5 wt%, 0.8 wt%, 1 wt%, 3 wt%, 5 wt%, 8 wt%, 10 wt%, 15 wt%, and 20 wt% of the first material. In some non-limiting examples, the patterned coating 110 may include no more than about 50 wt%, 40 wt%, 30 wt%, 25 wt%, 20 wt%, 15 wt%, 10 wt%, 8 wt%, 5 wt%, 3 wt%, and 1 wt% of the first material. In some non-limiting examples, the remainder of the patterned coating 110 may consist substantially of the second material.

[0419] In some non-limiting examples, at least one of the materials of the patterned coating 110 (including, but not limited to, at least one of the first material and the second material) may contain at least one of a plurality of first ligand portions and second ligand portions.

[0420] In some non-limiting examples, at least one of the materials of the patterned coating 110 (including, but not limited to, at least one of the first material and the second material) may comprise at least one of a plurality of first ligand portions and a plurality of second ligand portions. In some non-limiting examples, at least one of a plurality of first ligand portions and a plurality of second ligand portions may be attached to a core portion. In some non-limiting examples, the core portion may comprise N. In some non-limiting examples, the core portion may comprise a phosphazene group. In some non-limiting examples, the core portion may be a cyclophosphinate.

[0421] In some non-limiting examples, at least one material of the patterned coating 110 (including, but not limited to, at least one of the first and second materials) may be represented by the chemical formula (CPH-1): (CPH-1) in: R Independently representing either the first ligand portion or the second ligand portion; and n It is an integer between 2 and 4.

[0422] In some non-limiting examples, at least one of the materials of the patterned coating 110 (including but not limited to the first material) may contain a first ligand portion to a second ligand portion in a ratio of approximately 1:1 based on the number of ligand portions in such material.

[0423] In some non-limiting examples, at least one of the materials of the patterned coating 110 (including, but not limited to, the second material) may contain a first ligand portion and a second ligand portion in a ratio of at least about 1:2, 2:1, 1:5 and 5:1, based on the number of ligand portions constituted in such material.

[0424] In some non-limiting examples, at least one of the materials of the patterned coating (including, but not limited to, the first material and the second material) may include: a first ligand portion comprising a fluoroalkyl portion, and a second ligand portion comprising at least one of the following: a substituted alkyl portion, an unsubstituted alkyl portion, a substituted fluoroalkyl portion, an unsubstituted fluoroalkyl portion, a substituted fluoroaryl portion, an unsubstituted fluoroaryl portion, a substituted aryl portion, an unsubstituted aryl portion, a substituted polycyclic aromatic portion, an unsubstituted polycyclic aromatic portion, a substituted binaphthyl portion, an unsubstituted binaphthyl portion, a substituted biphenyl portion, an unsubstituted biphenyl portion, a substituted adamantyl portion, and an unsubstituted adamantyl portion.

[0425] Example To compare the performance of patterned coating 110 containing a composition having at least one mixed ligand compound, the following experiments were conducted.

[0426] Synthesis of compositions containing EM-80 Anhydrous THF (10 mL) and HCF₂(CF₂)₇CH₂OH (15.5 mmol, 3.1 eq.) were charged into a dry 150 mL round-bottom flask equipped with a stir bar, an argon balloon, and a diaphragm. NaH (25.5 mmol, 3.1 eq., 60% wt) was carefully added to the flask at room temperature. The mixture was stirred until gas escape stopped. Toluene (100 mL, anhydrous) was then added to the reaction mixture, followed by hexachlorocyclotriphosphazene at room temperature. The reaction mixture was stirred for more than 48 hours until the reaction was complete (confirmed by NMR analysis).

[0427] Add water (100 mL) to the reaction mixture. Remove organic material from the reaction mixture by blowing air in. Filter the remaining suspension under vacuum. Wash the solid obtained after filtration with water (3 x 200 mL) and DCM (2 x 200 mL) to give the final product (8.7 g, white solid).

[0428] The final product was analyzed by high-resolution electrospray ionization mass spectrometry (HRESI-MS). As summarized in Table 10 below, the HRESI-MS results indicate the formation of a composition containing EM-80 (referred to herein as "Composition A").

[0429] Table 10

[0430] A sample was fabricated by vacuum deposition of a layer of material A approximately 30 nm thick over a glass substrate. An open-mask deposition of a deposition material 531 containing Ag was then performed on the exposed surface 11 of the resulting nucleation-modified coating at a rate of approximately 1 Å / s until a reference thickness of approximately 15 nm was obtained. Once the sample was fabricated, EM transmittance measurements were performed to determine the amount of deposited material deposited on the exposed surface 11 of the patterned coating 110. Those skilled in the art will understand that samples with little or no metal present can be substantially transparent, while samples with metal deposited on them (particularly as a sealing coating) typically exhibit substantially low transmittance.

[0431] Table 11 below shows the measured transmittance at wavelengths of 450 nm, 520 nm, and 850 nm after the sample was subjected to a vapor flux of 532 g of Ag.

[0432] Table 11

[0433] The reduction in EM transmittance at wavelengths of 450 nm, 520 nm, and 850 nm after the samples were subjected to a vapor flux of 532 of Yb:LiF (1:1 (volume:volume)) and MgAg (1:9 (volume:volume)) is summarized in Table 12. The reduction in EM transmittance was determined by measuring the EM transmittance through the samples and comparing that transmittance with that of a reference sample in which no exposure to a vapor flux of 532 of Yb:LiF and MgAg occurred.

[0434] Table 12

[0435] As can be seen from the results in Tables 3, 4, 11, and 12, it has now been found that, in some non-limiting examples, nucleating modified materials comprising compositions containing multiple compounds, including at least one mixed ligand compound, can exhibit different EM transmittance characteristics. In some non-limiting examples, nucleating modified materials comprising compositions containing multiple compounds (including, but not limited to, composition A) can exhibit EM transmittance characteristics at at least one of wavelengths of about 450 nm, 520 nm, and 850 nm, which are at least substantially free of the EM transmittance characteristics of nucleating modified materials containing at least one of the following: a core portion, a first ligand portion, and a second ligand portion, including but not limited to EM-4, EM-11, and EM-12. It was found that the transmittance reduction (including, but not limited to, at wavelengths of about 450 nm and 520 nm) of the patterned coating 110 formed from composition A was significantly lower compared to the patterned coating 100 formed solely from EM-11. Without being bound by any particular theory, it can be assumed that, at least in some scenarios, coatings containing multiple compounds (such as composition A) may exhibit a transmittance reduction that is unlikely to exceed that of coatings containing a single compound.

[0436] Mixtures with other materials In some non-limiting examples, at least one of the materials of the patterned coating 110 (including, but not limited to, the first material and the second material) may include at least one of F and Si. In some non-limiting examples, at least one of the first material and the second material may include at least one of F and Si. In some non-limiting examples, the first material may include at least one of F and Si, and the second material may include at least one of F and Si. In some non-limiting examples, both the first material and the second material may include F. In some non-limiting examples, both the first material and the second material may include Si. In some non-limiting examples, each of the first material and the second material may include at least one of F and Si.

[0437] In some non-limiting examples, at least one of the first and second materials may include both F and Si. In some non-limiting examples, one of the first and second materials may not include at least one of F and Si. In some non-limiting examples, the second material may include at least one of F and Si, and the first material may not include at least one of F and Si.

[0438] In some non-limiting examples, at least one of the materials of the patterned coating 110 (including, but not limited to, the first material and the second material) may include a compound containing F. In some non-limiting examples, at least one of the first material and the second material may include a compound containing F and C. In some non-limiting examples, at least one of the first material and the second material may include a compound containing F and C, wherein the atomic ratio of F to C corresponds to the F / C quotient of at least one of about 0.5, 0.7, 1, 1.5, 2, and 2.5.

[0439] In some non-limiting examples, the atomic ratio of F to C can be determined by counting the F atoms present in the compound structure, and for C atoms, only counting the sp atoms present in the compound structure. 3 Hybridized C atoms are counted. In some non-limiting examples, at least one of the materials of the patterned coating 110 (including, but not limited to, the first material and the second material) may include a compound comprising portions containing F and C as part of its molecular substructure, wherein the atomic ratio of F to C corresponds to the F / C quotient of at least one of about 1, 1.5, and 2.

[0440] In some non-limiting examples, at least one of the materials of the patterned coating 110 (which in some non-limiting examples may be at least one of a first material and a second material) may include F, and at least one of the other materials of the patterned coating 110 may include sp. 2 C atoms. In some non-limiting examples, at least one of the materials of the patterned coating 110 (including, but not limited to, at least one of the first and second materials) may include F, and at least one of the other materials of the patterned coating 110 may include sp. 3 C atoms. In some non-limiting examples, at least one of the materials of the patterned coating 110 (including, but not limited to, at least one of the first and second materials) may include F and sp. 3 C atoms, and at least one of the other materials in the patterned coating 110 may include sp 2 C atoms. In some non-limiting examples, at least one of the materials of the patterned coating 110 (including, but not limited to, at least one of the first and second materials) may include F and sp. 3C atom, where all F atoms bonded to C atom can bond to sp atom 3 C atoms, and at least one of the other materials in the patterned coating 110 may include sp 2 C atoms. In some non-limiting examples, at least one of the materials of the patterned coating 110, including but not limited to at least one of the first and second materials, may include F and sp. 3 C atom, where all F atoms bonded to C atom can bond to sp atom 3 C atoms, and at least one of the other materials in the patterned coating 110 may include sp 2 C atoms and may not include F. In some non-limiting examples, in any of the foregoing non-limiting examples, "at least one of the materials of the patterned coating 110" may correspond to the second material, and "at least one of the other materials of the patterned coating 110" may correspond to the first material.

[0441] Those skilled in the art will understand that it includes F, sp 2 C atom, sp 3 The presence of a material in a coating containing at least one of C atoms, aromatic hydrocarbon moieties, other functional groups, and other moieties can be detected using a variety of methods known in the art, including, as a non-limiting example, X-ray photoelectron spectroscopy (XPS).

[0442] In some non-limiting examples, at least one of the materials of the patterned coating 110 (which, as a non-limiting example, may be at least one of a first material and a second material) may include F, and at least one of the other materials of the patterned coating 110 may include an aromatic hydrocarbon portion. In some non-limiting examples, at least one of the materials of the patterned coating 110 (including, but not limited to, at least one of a first material and a second material) may include F, and at least one of the materials of the patterned coating 110 may not include an aromatic hydrocarbon portion. In some non-limiting examples, at least one of the materials of the patterned coating 110 (including, but not limited to, at least one of a first material and a second material) may include F and may not include an aromatic hydrocarbon portion, and at least one of the other materials of the patterned coating 110 may include an aromatic hydrocarbon portion. In some non-limiting examples, at least one of the materials of the patterned coating 110 (including, but not limited to, at least one of a first material and a second material) may include F and may not include an aromatic hydrocarbon portion, and at least one of the other materials of the patterned coating 110 may include an aromatic hydrocarbon portion and may not include F. In some non-limiting examples, the aromatic hydrocarbon moiety may include at least one of a substituted polycyclic aromatic hydrocarbon moiety, an unsubstituted polycyclic aromatic hydrocarbon moiety, a substituted phenyl moiety, and an unsubstituted phenyl moiety.

[0443] In some non-limiting examples, at least one of the materials of the patterned coating 110 (including, but not limited to, at least one of the first and second materials) may include F, and at least one of the other materials of the patterned coating 110 may include a polycyclic aromatic hydrocarbon (PAH) portion. In some non-limiting examples, at least one of the materials of the patterned coating 110 (including, but not limited to, at least one of the first and second materials) may include F, and at least one of the materials of the patterned coating 110 may not contain a PAH portion. In some non-limiting examples, at least one of the materials of the patterned coating 110 (including, but not limited to, at least one of the first and second materials) may include F and may not contain a PAH portion, and at least one of the other materials of the patterned coating 110 may include a PAH portion. In some non-limiting examples, at least one of the materials of the patterned coating 110 (including, but not limited to, at least one of the first and second materials) may include F and may not contain a PAH portion, and at least one of the other materials of the patterned coating 110 may include a PAH portion and may not contain F.

[0444] Without wishing to be bound by any particular theory, it may be assumed, in some non-limiting examples, the presence of a high surface tension moiety in the compound, including but not limited to containing at least one sp... 2 The C-atom portion, including but not limited to polycyclic aromatic hydrocarbon portions, can reduce the ability of the patterned coating 110 containing such a compound to act as a NIC to resist the deposition of a deposited material 531, including but not limited to at least one of metals and alloys, including but not limited to Yb, Ag, Mg, and at least one of Ag-containing materials, including but not limited to MgAg. In some non-limiting examples, the patterned coating 110 containing such a compound can have a substantially high initial adhesion probability due to the presence of the high surface tension portion.

[0445] In some non-limiting examples, the presence of a high surface tension moiety in the compound may be assumed, including but not limited to containing at least one sp... 2 The C atom portion, including but not limited to the polycyclic aromatic hydrocarbon portion, can increase the reliability of the patterned coating 110 containing such a compound by increasing at least one of the cohesive energy and stability of the patterned coating 110.

[0446] Without being bound by any particular theory, it may be assumed that, in some non-limiting examples, the presence of a low surface tension portion of the compound, including but not limited to portions containing at least one F atom, including but not limited to fluoroalkyl portions, can increase the ability of a patterned coating 110 containing such a compound to act as a NIC to resist the deposition of a deposited material 531, including but not limited to at least one of metals and alloys, including but not limited to Yb, Ag, Mg, and at least one of Ag-containing materials, including but not limited to MgAg. In some non-limiting examples, due to the presence of the low surface tension portion, the patterned coating 110 containing such a compound can have a substantially low initial adhesion probability.

[0447] In some non-limiting examples, it may be assumed that the presence of low surface tension portions in the compound, including but not limited to portions containing at least one F atom, including but not limited to fluoroalkyl portions, may reduce the reliability of the patterned coating 110 containing such a compound by, including but not limited to, reducing the cohesive energy of the patterned coating 110.

[0448] In some non-limiting examples, mixed ligand compounds comprising high and low surface tension portions may be applicable in certain scenarios. In some non-limiting examples, such mixed ligand compounds may be applicable in providing a substantially uniform patterned coating 110. Without wishing to be bound by any particular theory, it can be assumed that patterned coatings 110 comprising compounds (including, but not limited to, mixed ligand compounds) having high and low surface tension portions can exhibit increased reliability and the ability to suppress the deposition of deposited materials 531, including but not limited to at least one of metals and alloys, including but not limited to Yb, Ag, Mg, and at least one of Ag-containing materials, including but not limited to MgAg.

[0449] In some non-limiting examples, compositions comprising multiple compounds may be applicable in certain scenarios, including but not limited to at least one compound comprising a high surface tension portion and at least one compound comprising a low surface tension portion. Without wishing to be bound by any particular theory, it can be assumed that patterned coating 110 comprising such compositions can exhibit increased reliability and the ability to suppress the deposition of deposited material 531, including but not limited to at least one of metals and alloys, including but not limited to Yb, Ag, Mg, and at least one of Ag-containing materials, including but not limited to MgAg.

[0450] In some non-limiting examples, at least one of the materials of the patterned coating 110 (including, but not limited to, the first material and the second material) may include an organic-inorganic hybrid material.

[0451] In some non-limiting examples, at least one of the materials of the patterned coating 110 (including, but not limited to, the first material and the second material) may include oligomers.

[0452] In some non-limiting examples, at least one of the materials of the patterned coating 110 (including, but not limited to, the first material and the second material) may include a compound having a molecular structure comprising a main chain and at least one functional group bonded to the main chain. In some non-limiting examples, the main chain may be an inorganic portion, and the at least one functional group may be an organic portion.

[0453] In some non-limiting examples, at least one of the materials in the patterned coating 110 (including, but not limited to, the first material and the second material) may have a molecular structure comprising a siloxane group. In some non-limiting examples, the siloxane group may be one of a linear siloxane group, a branched siloxane group, and a cyclic siloxane group. In some non-limiting examples, the main chain may comprise a siloxane group. In some non-limiting examples, the main chain may comprise a siloxane group and at least one functional group containing F. In some non-limiting examples, the at least one functional group containing F may be a fluoroalkyl group. In some non-limiting examples, such compounds may comprise fluorosiloxanes.

[0454] In some non-limiting examples, at least one of the materials of the patterned coating 110 (including, but not limited to, at least one of the first and second materials) may include at least one of a fluorocarbon portion and a siloxane portion, and at least one of the other materials of the patterned coating 110 may include a polycyclic aromatic hydrocarbon portion. In some non-limiting examples, at least one of the materials of the patterned coating 110 (including, but not limited to, at least one of the first and second materials) may include at least one of a fluorocarbon portion and a siloxane portion, and at least one of the materials of the patterned coating 110 may not include a polycyclic aromatic hydrocarbon portion. In some non-limiting examples, at least one of the materials of the patterned coating 110 (including, but not limited to, at least one of the first and second materials) may include at least one of a fluorocarbon portion and a siloxane portion and may not include a polycyclic aromatic hydrocarbon portion, and at least one of the other materials of the patterned coating 110 may include a polycyclic aromatic hydrocarbon portion. In some non-limiting examples, at least one of the materials of the patterned coating 110 (including, but not limited to, at least one of the first material and the second material) may include at least one of a fluorocarbon portion and a siloxane portion and may not include a polycyclic aromatic hydrocarbon portion, and at least one of the other materials of the patterned coating 110 may include a polycyclic aromatic hydrocarbon portion and may not include at least one of a fluorocarbon portion and a siloxane portion.

[0455] In some non-limiting examples, at least one of the materials of the patterned coating 110 (including, but not limited to, the first material and the second material) may have a molecular structure comprising a silsesquioxane group. In some non-limiting examples, the silsesquioxane group may be a polyoctahedral silsesquioxane (POSS). In some non-limiting examples, the main chain may comprise a silsesquioxane group. In some non-limiting examples, the main chain may comprise a silsesquioxane group and at least one functional group containing F. In some non-limiting examples, the at least one functional group containing F may be a fluoroalkyl group.

[0456] In some non-limiting examples, at least one of the materials of the patterned coating 110 (including, but not limited to, the first material and the second material) may have a molecular structure comprising at least one of the following: a substituted aryl group, an unsubstituted aryl group, a substituted heteroaryl group, and an unsubstituted heteroaryl group. In some non-limiting examples, the aryl group may be at least one of phenyl and naphthyl. In some non-limiting examples, at least one C atom of the aryl group may be substituted with a heteroatom (as a non-limiting example, at least one of O, N, and S) to derive a heteroaryl group. In some non-limiting examples, the main chain may comprise at least one of a substituted aryl group, an unsubstituted aryl group, a substituted heteroaryl group, and an unsubstituted heteroaryl group. In some non-limiting examples, the molecular structure of the compound may include: (i) a main chain comprising at least one of the following: a substituted aryl group, an unsubstituted aryl group, a substituted heteroaryl group, and an unsubstituted heteroaryl group; and (ii) at least one functional group comprising F. In some non-limiting examples, at least one functional group containing F may be a fluoroalkyl group.

[0457] In some non-limiting examples, at least one of the materials of the patterned coating 110 (including, but not limited to, at least one of the first and second materials) may include F, and at least one of the other materials of the patterned coating 110 may include a phenyl portion. In some non-limiting examples, at least one of the materials of the patterned coating 110 (including, but not limited to, at least one of the first and second materials) may include F, and at least one of the materials of the patterned coating 110 may not include a phenyl portion. In some non-limiting examples, at least one of the materials of the patterned coating 110 (including, but not limited to, at least one of the first and second materials) may include F and may not include a phenyl portion, and at least one of the other materials of the patterned coating 110 may include a phenyl portion and may not include F. In some non-limiting examples, at least one of the materials of the patterned coating 110 (including, but not limited to, at least one of the first and second materials) may include F and may not include a phenyl portion, and at least one of the other materials of the patterned coating 110 may include a phenyl portion and may not include F.

[0458] In some non-limiting examples, at least one of the materials of the patterned coating 110 (including, but not limited to, at least one of the first and second materials) may include at least one of a fluorocarbon compound portion and a siloxane portion, and at least one of the other materials of the patterned coating 110 may include a phenyl portion. In some non-limiting examples, at least one of the materials of the patterned coating 110 (including, but not limited to, at least one of the first and second materials) may include at least one of a fluorocarbon compound portion and a siloxane portion, and at least one of the materials of the patterned coating 110 may not include a phenyl portion. In some non-limiting examples, at least one of the materials of the patterned coating 110 (including, but not limited to, at least one of the first and second materials) may include at least one of a fluorocarbon compound portion and a siloxane portion and may not include a phenyl portion, and at least one of the other materials of the patterned coating 110 may include a phenyl portion. In some non-limiting examples, at least one of the materials of the patterned coating 110 (including, but not limited to, at least one of the first and second materials) may include at least one of a fluorocarbon compound portion and a siloxane portion and may not include a phenyl portion, and at least one of the other materials of the patterned coating 110 may include a phenyl portion and may not include either the fluorocarbon compound portion or the siloxane portion.

[0459] In some non-limiting examples, at least one of the materials of the patterned coating 110 (including, but not limited to, at least one of the first and second materials) may have a molecular structure comprising at least one of substituted hydrocarbon groups and unsubstituted hydrocarbon groups. In some non-limiting examples, the compound may have a molecular structure comprising at least one of straight-chain hydrocarbon groups, branched hydrocarbon groups, and cyclic hydrocarbon groups. In some non-limiting examples, at least one C atom of the hydrocarbon group may be substituted with a heteroatom, which includes, but is not limited to, at least one of O, N, and S.

[0460] In some non-limiting examples, at least one of the materials of the patterned coating 110 (including, but not limited to, at least one of the first and second materials) may be a fluoropolymer. In some non-limiting examples, the compound may be a block copolymer containing F. In some non-limiting examples, the compound may be an oligomer. In some non-limiting examples, the oligomer may be a fluorinated oligomer. In some non-limiting examples, the compound may be a block oligomer containing F.

[0461] In some non-limiting examples, at least one of the materials of the patterned coating 110 (including, but not limited to, at least one of the first and second materials) may have a metal complex. In some non-limiting examples, the metal complex may be an organometallic complex. In some non-limiting examples, the organometallic complex may contain F. In some non-limiting examples, the organometallic complex may include at least one ligand containing F. In some non-limiting examples, the at least one ligand containing F may include a fluoroalkyl group.

[0462] Typically, the molecular structure and molecular composition of the materials of the patterned coating 110 (including, but not limited to, at least one of the first and second materials) may be different. In some non-limiting examples, the materials may be selected such that they have at least one property that is substantially similar to and substantially different from each other, including, but not limited to, at least one of the following: molecular structures of monomers, monomer backbones, and functional groups; presence of common elements; similarity of molecular structures; characteristic surface energy; refractive index; molar weight; thermal properties, including but not limited to at least one of melting temperature, sublimation temperature, glass transition temperature, and thermal decomposition temperature.

[0463] In some non-limiting examples, as used herein with respect to materials, characteristic surface energy may generally refer to the surface energy measured from such material. In some non-limiting examples, characteristic surface energy may be measured from a surface formed by a material deposited in the form of a thin film. Various methods and theories for determining the surface energy of solids are known. In some non-limiting examples, surface energy may be determined based on a series of contact angle measurements, wherein various liquids are brought into contact with the solid surface to measure the contact angle between the liquid-gas interface and the surface. In some non-limiting examples, the surface energy of the solid surface may be equal to the surface tension of the liquid having the highest surface tension that fully wets the surface. In some non-limiting examples, a Zissman diagram may be used to determine the highest surface tension value that will result in full wetting of the surface (i.e., a 0° contact angle).

[0464] In some non-limiting examples, at least one of the first and second materials of the patterned coating 110 may be an oligomer.

[0465] In some non-limiting examples, the first material may include a first oligomer, and the second material may include a second oligomer. Each of the first and second oligomers may include a variety of monomers.

[0466] In some non-limiting examples, at least one segment of the molecular structure of at least one of the materials of the patterned coating 110 (including, but not limited to, at least one of the first material and the second material) can be represented by formula (I): ( Mon ) n(I) in: Mon Represents a monomer, and n It is an integer of at least 2.

[0467] In some non-restrictive examples, n It can be an integer between approximately 2-100, 2-50, 3-20, 3-15, 3-10, and 3-7.

[0468] In some non-limiting examples, the first material may be a linked cyclophosphonitrile, and the molecular structure of the second material may be independently represented by formula (I).

[0469] In some non-limiting examples, at least one functional group of the monomer may have a surface tension of not more than about 25 dynes / cm, 21 dynes / cm, 20 dynes / cm, 19 dynes / cm, 18 dynes / cm, 17 dynes / cm, 16 dynes / cm, 15 dynes / cm, 14 dynes / cm, 13 dynes / cm, 12 dynes / cm, 11 dynes / cm and 10 dynes / cm.

[0470] In some non-limiting examples, the monomer may include at least one of the CF2 and CF2H moieties. In some non-limiting examples, the monomer may include at least one of the CF2 and CF3 moieties. In some non-limiting examples, the monomer may include the CH2CF3 moiety. In some non-limiting examples, the monomer may include at least one of C and O. In some non-limiting examples, the monomer may include a fluorocarbon monomer. In some non-limiting examples, the monomer may include at least one of the following: vinyl fluoride moieties, vinylidene fluoride moieties, tetrafluoroethylene moieties, trifluorochloroethylene moieties, hexafluoropropylene moieties, and fluorinated 1,3-dioxane-pentene moieties.

[0471] In some non-limiting examples, the monomer may include a monomer backbone and functional groups. In some non-limiting examples, the functional groups may be bonded to the monomer backbone directly or via a linking group. In some non-limiting examples, the monomer may include a linking group, and the linking group may be bonded to both the monomer backbone and the functional groups. In some non-limiting examples, the monomer may include multiple functional groups, which may be the same as or different from each other. In such examples, each functional group may be bonded to the monomer backbone directly or via a linking group. In some non-limiting examples where multiple functional groups are present, multiple linking groups may also be present.

[0472] In some non-limiting examples, the molecular structure of the second material may include a variety of different monomers. In some non-limiting examples, such a molecular structure may include monomer species having at least one of different molecular compositions and molecular structures. Non-limiting examples of such molecular structures include those represented by formulas (II) and (III): ( Mon A ) k ( Mon B ) m (II) ( Mon A ) k ( Mon B ) m ( Mon C ) o (III) in: Mon A , Mon B and Mon C Each represents a single entity type, and k , m and o Each is an integer of at least 2.

[0473] In some non-restrictive examples, k , m and o Each is represented as an integer among approximately 2-100, 2-50, 3-20, 3-15, 3-10, and 3-7. Those skilled in the art will understand that regarding singletons... Mon Various non-limiting examples and descriptions are applicable Mon A , Mon B and Mon C Each of them.

[0474] In some non-restrictive examples, the monomer can be represented by equation (IV): M -( L - R x ) y (IV) in: M Represents a single main chain unit. L Indicates a bonding group. R Indicates functional groups, x It is an integer between 1 and 4, and y It is an integer between 1 and 3.

[0475] In some non-limiting examples, the linking group may be represented by at least one of a single bond, O, N, NH, C, CH, CH2, and S.

[0476] The various non-restrictive examples of functional groups described herein are applicable to equation (IV). R In some non-restrictive examples, functional groups R The oligomer may include an oligomer unit, and the oligomer unit may further include a plurality of functional group monomer units. In some non-limiting examples, the functional group monomer units may be at least one of CH2 and CF2. In some non-limiting examples, such functional group monomer units may be bonded together to form at least one of alkyl and fluoroalkyl oligomer units. In some non-limiting examples, the oligomer unit may further include a functional group terminal unit. In some non-limiting examples, the functional group terminal unit may be disposed at the end of the oligomer unit and bonded to the functional group monomer unit. In some non-limiting examples, the end where the functional group terminal unit is disposed may correspond to a segment of the functional group that is remote from the monomer backbone unit. In some non-limiting examples, the functional group terminal unit may include at least one of CF2H and CF3.

[0477] In some non-limiting examples, the monolithic main chain unit M It can possess high surface tension. In some non-limiting examples, the monomer backbone unit can have a higher number of functional groups than those bonded to it. R At least one of them has a higher surface tension. In some non-limiting examples, the monomer backbone unit may have a higher surface tension than any functional group bonded to it. R Higher surface tension.

[0478] In some non-limiting examples, the monomer backbone unit may have a surface tension of at least about 25 dynes / cm, 30 dynes / cm, 40 dynes / cm, 50 dynes / cm, 75 dynes / cm, 100 dynes / cm, 150 dynes / cm, 200 dynes / cm, 250 dynes / cm, 500 dynes / cm, 1,000 dynes / cm, 1,500 dynes / cm and 2,000 dynes / cm.

[0479] In some non-limiting examples, the monomer main chain unit may include P and N, including but not limited to phosphazenes, wherein a double bond exists between P and N, and may be represented as " NP "and" N=P At least one of the following. In some non-limiting examples, the monomer main chain unit may include Si and O, including but not limited to silsesquioxanes, which may be represented as SiO. 3 / 2 .

[0480] In some non-limiting examples, at least a portion of the molecular structure of at least one of the materials of the patterned coating 110 (including, but not limited to, at least one of the first and second materials) is represented by formula (V): ( NP -( LR x ) y ) n (V) in: NP Represents the main chain unit of phosphazene monomers. L Indicates a bonding group. R Indicates functional groups, x Integers between 1 and 4 y It is an integer between 1 and 3, and n It is an integer of at least 2.

[0481] In some non-limiting examples, the molecular structure of the second material may be represented by formula (V). In some non-limiting examples, the second material may be cyclophosphinitrogen. In some non-limiting examples, the molecular structure of cyclophosphinitrogen may be represented by formula (V).

[0482] In some non-restrictive examples, L It can represent O, x It can be 1, and R This can represent a fluoroalkyl group. In some non-limiting examples, at least one segment of the molecular structure of the second material can be represented by formula (VI): ( NP ( OR f )2) n (VI) in: R f The fluoroalkyl group represents the fluoroalkyl group, and n It is an integer between 3 and 7.

[0483] In some non-limiting examples, the fluoroalkyl group may include at least one of a CF2 group, a CF2H group, a CH2CF3 group, and a CF3 group. In some non-limiting examples, the fluoroalkyl group may be represented by formula (VII): (VII) in: p Integers between 1 and 5; q It is an integer between 6 and 20; and Z It represents one of H and F.

[0484] In some non-restrictive examples, p It can be 1.

[0485] In some non-limiting examples, the fluoroalkyl group in formula (VI) R f It can be represented by equation (VII).

[0486] In some non-limiting examples, at least one segment of the molecular structure of the second material can be represented by formula (VIII): ( SiO 3 / 2 - ( L - R )) n (VIII) in: L Indicates a bonding group. R Indicates sensual groups, and n It is an integer between 6 and 12.

[0487] In some non-restrictive examples, L This can represent the presence of at least one of a single bond, O, a substituted alkyl group, and an unsubstituted alkyl group. In some non-limiting examples, n It can be one of 8, 10, and 12. In some non-restrictive examples, R It may include functional groups with low surface tension. In some non-limiting examples, R It may include at least one of an F-group and a Si-group. In some non-limiting examples, R It may include at least one of fluorocarbon groups and siloxane groups. In some non-limiting examples, R It may include at least one of a CF2 group and a CF2H group. In some non-limiting examples, RIt may include at least one of CF2 and CF3 groups. In some non-limiting examples, R It may include CH2CF3 groups. In some non-limiting examples, the material represented by formula (VIII) may be POSS.

[0488] In some non-limiting examples, at least a fragment of the molecular structure of at least one material (including but not limited to a second material) of the patterned coating 110 may be represented by formula (IX): ( SiO 3 / 2 - R f ) n (IX) in: n It is an integer between 6 and 12, and R f It indicates a fluoroalkyl group.

[0489] In some non-restrictive examples, n It can be one of 8, 10, and 12. In some non-restrictive examples, R f This includes functional groups with low surface tension. In some non-limiting examples, R f It may include at least one of the CF2 part and the CF2H part. In some non-limiting examples, R f It may include at least one of CF2 and CF3 parts. In some non-limiting examples, R f It may include the CH2CF3 portion. In some non-limiting examples, the material represented by formula (IX) may be POSS.

[0490] In some non-limiting examples, the fluoroalkyl group in formula (IX) R f It can be represented by equation (VII).

[0491] In some non-limiting examples, at least one segment of the molecular structure of the second material can be represented by equation (X): (SiO 3 / 2 -(CH2) x (CF3) n (X) in: x It is an integer between 1 and 5, and n It is an integer between 6 and 12.

[0492] In some non-restrictive examples, n It can be one of 8, 10, and 12.

[0493] In some non-limiting examples, the compound represented by formula (X) can be a POSS.

[0494] In some non-restrictive examples, functional groups R and fluoroalkyl groups R f At least one of the groups in any of the foregoing formulas may be chosen independently each time such a group appears. Those skilled in the art will understand that any of the foregoing formulas may represent a substructure of the compound, and may contain at least one of other groups and other portions not explicitly shown in the foregoing formulas. Those skilled in the art will understand that the various formulas provided in this application may represent at least one of straight-chain, branched, cyclic, cyclic-straight-chain, and cross-linked structures.

[0495] While some non-limiting examples have been described herein with reference to the first and second materials, it should be understood that the patterned coating may also include at least one additional material (including, but not limited to, at least one of the third and fourth materials), and the description of at least one of the molecular structure and properties of the first material, the second material, the first oligomer, and the second oligomer may be applied to additional materials that may be included in the patterned coating 110.

[0496] In some non-limiting examples, the difference in sublimation temperature of the various materials of the patterned coating 110 (including, but not limited to, the difference between the first material and the second material) may be no more than one of about 5°C, 10°C, 15°C, 20°C, 30°C, 40°C and 50°C.

[0497] In some non-limiting examples, the difference in melting temperature of the various materials of the patterned coating 110 (including, but not limited to, the difference between the first material and the second material) may be no more than one of about 5°C, 10°C, 15°C, 20°C, 30°C, 40°C and 50°C.

[0498] In some non-limiting examples, at least one of the materials of the patterned coating 110 (including, but not limited to, at least one of the first and second materials) may have low characteristic surface energy.

[0499] In some non-limiting examples, at least one of the materials of the patterned coating 110 (including, but not limited to, at least one of the first and second materials) may have a low characteristic surface energy of no more than about 20 dynes / cm.

[0500] In some non-limiting examples, the surface energy of each of at least two materials of the patterned coating 110 (including, but not limited to, the surface energies of the first material and the second material) is not more than one of about 25 dynes / cm, 21 dynes / cm, 20 dynes / cm, 19 dynes / cm, 18 dynes / cm, 17 dynes / cm, 16 dynes / cm, 15 dynes / cm, 14 dynes / cm, 13 dynes / cm, 12 dynes / cm, 11 dynes / cm and 10 dynes / cm.

[0501] In some non-limiting examples, at least one of the materials of the patterned coating 110 (including, but not limited to, the first material and the second material) may have a refractive index of no more than one of about 1.5, 1.45, 1.44, 1.43, 1.42 and 1.41 at a wavelength of at least one of 500 nm and 460 nm.

[0502] In some non-limiting examples, the molar weight of at least one of the materials of the patterned coating 110 (including, but not limited to, at least one of the first material and the second material) may be at least about 750 g / mol, 1,000 g / mol, 1,250 g / mol, 1,500 g / mol, 1,750 g / mol and 2,000 g / mol.

[0503] In some non-limiting examples, the molar weight of at least one of the materials of the patterned coating 110 (including, but not limited to, at least one of the first material and the second material) may be no more than one of about 10,000 g / mol, 8,000 g / mol, 7,000 g / mol and 5,000 g / mol.

[0504] In some non-limiting examples, the patterned coating 110 may include a variety of materials exhibiting similar thermal properties. In some non-limiting examples, the patterned coating 110 may include a variety of materials having similar thermal properties, including but not limited to at least one of a melting temperature and a sublimation temperature.

[0505] In some non-limiting examples, a method for manufacturing a layered semiconductor device 100 (including, but not limited to, optoelectronic device 200) may include the following actions: depositing a patterned coating on a first exposed layer surface 11 of the device in a laterally oriented first portion 101 of the device 100; and depositing a deposition material 531 on a second exposed layer surface 11 of the device in a laterally oriented second portion 102 of the device. The initial adhesion probability of the deposition material 531 on the exposed layer surface 11 of the patterned coating 110 in the first portion 101 may be substantially less than the initial adhesion probability of the deposition material 531 on the exposed layer surface 11 of the second portion 102, such that the exposed layer surface 11 of the patterned coating 110 in the first portion 101 may be substantially free of a sealing coating 140 of the deposition material 531. In some non-limiting examples, the patterned coating 110 deposited on the first exposed layer surface 11 of the device 100 may include a first material and a second material.

[0506] In some non-limiting examples, depositing the patterned coating 110 onto the first exposed layer surface 11 of the device 100 may include: providing a mixture comprising multiple materials, and depositing the mixture onto the first exposed layer surface 11 of the device 100 to form the patterned coating 110 thereon. In some non-limiting examples, the mixture may include a first material and a second material. In some non-limiting examples, both the first material and the second material may be deposited onto the first exposed layer surface 11 to form the patterned coating 110 thereon.

[0507] In some non-limiting examples, a mixture comprising multiple materials can be deposited onto the first exposed layer surface 11 of device 100 via a PVD process (including but not limited to thermal evaporation). In some non-limiting examples, a patterned coating 110 can be formed by evaporating the mixture from a single evaporation source and depositing the mixture onto the first exposed layer surface 11 of device 100. In some non-limiting examples, as a non-limiting example, a mixture comprising a first material and a second material can be placed in a single evaporation source (crucible) for heating under vacuum. Once the evaporation temperature of the material is reached, the resulting vapor flux can be directed to the first exposed layer surface 11 of device 100 to deposit the patterned coating 110 thereon.

[0508] Without wishing to be bound by any particular theory, it may be assumed that a composition comprising at least one of several materials (including, but not limited to, a first material and a second material) having substantially similar sublimation temperatures and molar weights may be applicable in some scenarios where it is necessary to form a substantially uniform patterned coating 110, even during extended deposition periods during which the patterned coating 110 can be deposited from a crucible containing such a composition.

[0509] For the purposes of this disclosure, the terms “composition” and “mixture” may be used interchangeably to refer to the same concept.

[0510] In some non-limiting examples, the patterned coating 110 can be deposited by co-evaporation of the first material and the second material. In some non-limiting examples, the first material can be evaporated from a first evaporation source, and the second material can be evaporated simultaneously from a second evaporation source, such that the mixture can be formed in the gas phase and co-deposited onto the surface 11 of the first exposed layer to provide the patterned coating 110 thereon.

[0511] substrate In some non-limiting examples, substrate 10 may include a bottom substrate 215. In some non-limiting examples, the bottom substrate 215 may be formed of a material suitable for its use, including, but not limited to, at least one of: inorganic materials, including, but not limited to, at least one of: Si, glass, metals (including, but not limited to, metal foil), sapphire, and other inorganic materials; and organic materials, including, but not limited to, polymers, including, but not limited to, at least one of: polyimide and Si-based polymers. In some non-limiting examples, the bottom substrate 215 may be one of: rigid or flexible. In some non-limiting examples, substrate 10 may be defined by at least one flat surface. In some non-limiting examples, substrate 10 may have at least one exposed layer surface 11 of the remaining front panel 201 components of the support device 200, including, but not limited to, at least one of a first electrode 220, at least one semiconductive layer 230, and a second electrode 240.

[0512] In some non-limiting examples, such a surface may be at least one of an organic surface and an inorganic surface.

[0513] In some non-limiting examples, in addition to the bottom substrate 215, the substrate 10 may also include at least one of the following supported on the exposed layer surface 11 of the bottom substrate 215: at least one of organic and inorganic layers (not shown and not specifically described herein).

[0514] In some non-limiting examples, such an additional layer may include at least one organic layer, which may be at least one of the following: including, replacing and supplementing at least one of the semiconductive layers 230.

[0515] In some non-limiting examples, such an additional layer may include at least one inorganic layer, which may include at least one electrode, which in some non-limiting examples may be at least one of the following: including, replacing and supplementing at least one of the first electrode 220 and the second electrode 240.

[0516] Backplane and the TFT structure contained therein In some non-limiting examples, such an additional layer may include a backplane 202. In some non-limiting examples, the backplane 202 may include at least one of the following: power supply circuitry and switching elements for driving the device 200, including but not limited to at least one of the following: at least one electronic thin-film transistor (TFT) structure 206 and at least one component thereof which may be formed by a photolithography process.

[0517] In some non-limiting examples, the backplane 202 of substrate 10 may include at least one electronic device, including but not limited to optoelectronic components, including but not limited to transistors, resistors, and capacitors, such as those components that can support device 200 as one of active matrix and passive matrix devices 200. In some non-limiting examples, such a structure may be a TFT structure 206.

[0518] In some non-limiting examples, the TFT structure 206 may include one of the following: a top gate, a bottom gate, an n-type TFT structure, and a p-type TFT structure 206. In some non-limiting examples, the TFT structure 206 may incorporate one of the following: amorphous Si (a-Si), indium gallium zinc oxide (IGZO), and low-temperature polycrystalline Si (LTPS).

[0519] First electrode The first electrode 220 may be deposited above the substrate 10. In some non-limiting examples, the first electrode 220 may be electrically coupled to at least one of a power supply terminal and ground. In some non-limiting examples, the first electrode 220 may be coupled by at least one driving circuit, which in some non-limiting examples may incorporate at least one TFT structure 206 in the backplane 202 of the substrate 10.

[0520] In some non-limiting examples, the first electrode 220 may include one of an anode and a cathode. In some non-limiting examples, the first electrode 220 may be an anode.

[0521] In some non-limiting examples, the first electrode 220 can be formed by depositing at least one thin conductive film over a portion of the substrate 10. In some non-limiting examples, a plurality of first electrodes 220 arranged spatially and laterally upward on the substrate 10 may be present. In some non-limiting examples, at least one of these at least one first electrode 220 may be deposited over a portion of the TFT insulating layer 207 arranged spatially and laterally. If so, in some non-limiting examples, at least one of such at least one first electrode 220 may extend through an opening in the corresponding TFT insulating layer 207 to be electrically coupled to the electrodes of the TFT structure 206 in the backplane 202.

[0522] In some non-limiting examples, at least one of the first electrode 220 and at least one of its thin films may comprise a variety of materials, including but not limited to at least one metallic material, including but not limited to at least one of Mg, Al, calcium (Ca), Zn, Ag, Cd, barium (Ba) and Yb, including but not limited to alloys comprising any of such materials, at least one metal oxide, including but not limited to TCO, including but not limited to ternary compositions, such as but not limited to at least one of FTO, IZO and ITO, in different proportions, including but not limited to combinations of any number of them in at least one layer, wherein any at least one layer may be, but is not limited to, a thin film.

[0523] Second electrode The second electrode 240 may be deposited over at least one semiconductive layer 230. In some non-limiting examples, the second electrode 240 may be electrically coupled to at least one of a power supply terminal and ground. In some non-limiting examples, the second electrode 240 may be coupled by at least one driving circuit, which in some non-limiting examples may incorporate at least one TFT structure 206 in the backplane 202 of the substrate 10.

[0524] In some non-limiting examples, the second electrode 240 may include one of an anode and a cathode. In some non-limiting examples, the second electrode 240 may be a cathode.

[0525] In some non-limiting examples, the second electrode 240 can be formed by depositing a deposition layer 130 (as at least one thin film in some non-limiting examples) over at least a portion of a semiconductive layer 230.

[0526] In some non-limiting examples, by exposing the exposed surface 11 of device 200 (which in some non-limiting examples may include at least one semiconductive layer 230) to the vapor flux 412 of patterned material 411, a deposited layer 130 may be deposited in a second portion 102, including but not limited to using a shadow mask 415 to form a patterned coating 110 in a first portion 101. In some non-limiting examples, such as Figure 2 As shown, regardless of whether a shadow mask 415 is used, the patterned material 110 may be substantially limited in its lateral orientation to the emitting region 210 to the non-emitting region 211, including but not limited to at least one signal transmission region 212 located therein.

[0527] In some non-limiting examples, there may be a plurality of second electrodes 240 arranged in a certain space on the side facing upward of at least one semiconductive layer 230.

[0528] In some non-limiting examples, at least one second electrode 240 may comprise a variety of materials, including but not limited to: at least one metallic material, including but not limited to at least one of Mg, Al, Ca, Zn, Ag, Cd, Ba, and Yb, including but not limited to alloys comprising at least one of any of these materials; at least one metal oxide, including but not limited to TCO, including but not limited to ternary compositions, such as but not limited to at least one of FTO, IZO, and ITO, including but not limited to zinc oxide (ZnO) in different proportions and other oxides comprising at least one of In and Zn in at least one layer; and at least one non-metallic material, wherein any at least one may be, but is not limited to, a thin conductive film. In some non-limiting examples, for Mg:Ag alloys, such alloy composition may be in the range of about 1:9 to 9:1 by volume.

[0529] In some non-limiting examples, the deposition of the second electrode 240 may be performed using either an open-mask or maskless deposition process.

[0530] In some non-limiting examples, the second electrode 240 may comprise multiple such coatings. In some non-limiting examples, such coatings may be different coatings disposed on top of each other.

[0531] In some non-limiting examples, the second electrode 240 may comprise a Yb / Ag bilayer coating. In some non-limiting examples, this bilayer coating may be formed by depositing a Yb coating followed by an Ag coating. In some non-limiting examples, the thickness of this Ag coating may exceed the thickness of the Yb coating.

[0532] In some non-limiting examples, the second electrode 240 may be a multi-coated electrode 240 comprising one of the following: a metal coating and an oxide coating.

[0533] In some non-limiting examples, the second electrode 240 may comprise fullerene and Mg.

[0534] In some non-limiting examples, such a coating can be formed by depositing a fullerene coating followed by a Mg coating. In some non-limiting examples, the fullerene can be dispersed within the Mg coating to form a fullerene-containing Mg alloy coating. Non-limiting examples of such coatings are described in at least one of the following: U.S. Patent Application Publication No. 2015 / 0287846, published October 8, 2015, and PCT International Application No. PCT / IB2017 / 054970, filed August 15, 2017, and published as WO2018 / 033860 on February 22, 2018.

[0535] Semiconducting layer In some non-limiting examples, at least one semiconducting layer 230 may include multiple layers 231, 233, 235, 237, 239. In some non-limiting examples, any one of these layers may be in the form of a thin film and arranged in a stacked configuration, which may include, but is not limited to, at least one of hole injection layer (HIL) 231, hole transport layer (HTL) 233, emitter layer (EML) 235, electron transport layer (ETL) 237, and electron injection layer (EIL) 239.

[0536] In some non-limiting examples, at least one semiconducting layer 230 may form a “series” structure comprising a plurality of EMLs 235. In some non-limiting examples, such a series structure may also include at least one charge generating layer (CGL).

[0537] Those skilled in the art will readily understand that the structure of device 200 can be altered by omitting or combining at least one of semiconductor layers 231, 233, 235, 237, and 239.

[0538] In some non-limiting examples, any of layers 231, 233, 235, 237, and 239 of at least one semiconducting layer 230 may include any number of sublayers. In some non-limiting examples, any of such layers 231, 233, 235, 237, and 239 (including, but not limited to, their sublayers) may contain mixtures and compositional gradients. In some non-limiting examples, although not shown, device 200 may include at least one layer comprising either an inorganic material or an organometallic material, and is not necessarily limited to a device 200 composed solely of organic materials. In some non-limiting examples, device 200 may include at least one quantum dot (QD).

[0539] In some non-limiting examples, HIL 231 may be formed using a hole injection material that facilitates hole injection at the anode.

[0540] In some non-limiting examples, hole transport materials can be used to form HTL 233, and in some non-limiting examples, the hole transport material can exhibit high hole mobility.

[0541] In some non-limiting examples, an electron transport material may be used to form ETL 237, and in some non-limiting examples, the electron transport material may exhibit high electron mobility.

[0542] In some non-limiting examples, the EIL 239 may be formed using an electron injection material that facilitates electron injection at the cathode.

[0543] In some non-limiting examples, as a non-limiting example, at least one EML 235 can be formed by doping the host material with at least one emitter material. In some non-limiting examples, the emitter material can be at least one of a fluorescent emitter material, a phosphorescent emitter material, and a thermally activated delayed fluorescence (TADF) emitter material.

[0544] In some non-limiting examples, the emitter material may be one of an R (red) emitter material, a G (green) emitter material, and a B (blue) emitter material, that is, an emitter material that promotes the emission of R (red), G (green), and B (blue) light respectively.

[0545] In some non-limiting examples, device 200 may be an OLED, wherein at least one semiconducting layer 230 may include at least one EML 235 interposed between conductive thin film electrodes 220, 240, such that when a potential difference is applied between them, holes may be injected into at least one semiconducting layer 230 via the anode and electrons may be injected into at least one semiconducting layer 230 via the cathode to migrate toward at least one EML 235 and combine to emit light in the form of photons.

[0546] In some non-limiting examples, device 200 may be an electroluminescent QD device 200, wherein at least one semiconducting layer 230 may include an active layer having at least one QD. When current is supplied to the first electrode 220 and the second electrode 240 by a power source, light (including but not limited to the form of photons) may be emitted from the active layer comprising at least one semiconducting layer 230 between them.

[0547] In some non-limiting examples, including cases where device 200 includes an illumination panel, the entire lateral orientation of device 200 may correspond to a single emitting element. Thus, Figure 2 The substantially planar cross-sectional profile shown may extend substantially along the entire lateral orientation of device 200, such that light is emitted from the device substantially along the entire lateral range of device 200. In some non-limiting examples, such a single emitting element may be driven by a single driving circuit of device 200.

[0548] In some non-limiting examples, including where the device 200 includes a display module, the lateral orientation of the device 200 may be subdivided into a plurality of emission regions 210 of the device 200, wherein in each emission region 210, the longitudinal orientation of the device structure 200 is such that light is emitted from it when energized.

[0549] Those skilled in the art will readily understand that the structure of the device 200 can be altered by introducing at least one additional layer (not shown) at a suitable location within the stack of at least one semiconducting layer 230, the additional layer comprising, but not limited to, at least one of the following: hole blocking layer (HBL) (not shown), electron blocking layer (EBL) (not shown), charge transport layer (CTL) (not shown), and charge injection layer (CIL) (not shown).

[0550] In some non-limiting examples, the patterned coating 110 may be formed simultaneously with at least one semiconductive layer 230. In some non-limiting examples, at least one material used to form the patterned coating 110 may also be used to form at least one semiconductive layer 230. In some non-limiting examples, the EIL 237 of at least one semiconductive layer 230 may be a patterned coating 110 that may be deposited in a first portion 101 and a second portion 102 during the deposition of at least one semiconductive layer 230. EIL 239 may then be selectively deposited in the emission region 210 of the second portion 102 above the EIL 237, such that the exposed surface 11 of the EIL 237 in the first portion 101 may be substantially free of EIL 239. The exposed surface 11 of EIL 239 in emitter region 210 and the exposed surface of EIL 237, which serves as patterned coating 110, can then be exposed to the vapor flux 532 of deposited material 531 to form a sealing coating 140 of deposited layer 130 on EIL 239 in second portion 102 and a discontinuous layer 160 of deposited material 531 on EIL 237 in first portion 101. In such a non-limiting example, several stages for manufacturing device 200 can be reduced.

[0551] Display panels and user equipment Now go to Figure 3 The figure illustrates a cross-sectional view of an example layered optoelectronic device 200, such as a display panel 300. In some non-limiting examples, the display panel 300 may include multiple layers deposited on a substrate 10, the multiple layers ending at the outermost layer forming a surface 301 of the display panel. In some non-limiting examples, the display panel 300 may be a type of device 200.

[0552] The surface 301 of the display panel 300 may extend substantially along a plane defined by a lateral axis across its lateral orientation.

[0553] In some non-limiting examples, surface 301, and indeed the entire display panel 300, may serve as the surface of user equipment 310, through which at least one EM signal 331 may be exchanged at a non-zero angle relative to the plane of surface 301. In some non-limiting examples, user equipment 310 may be a computing device 310 such as, but not limited to, smartphones, tablets, laptops, e-readers, and some other electronic devices 310 such as monitors, televisions, and smart devices 310, including but not limited to automotive displays, windshields, home appliances, and medical, commercial, and industrial devices 310.

[0554] In some non-limiting examples, surface 301 may correspond to and match at least one of body 320 and opening 321 therein, in which at least one display lower component 330 may be accommodated.

[0555] In some non-limiting examples, at least one display lower component 330 may be formed with the display panel 300 on its surface opposite to the surface 301, including but not limited to at least one of the following: integrally formed, and formed as an assembly module.

[0556] In some non-limiting examples, at least one hole 322 may be formed in the display panel 300 to allow at least one EM signal 331 to be exchanged through the surface 301 of the display panel 300 at a non-zero angle with the plane defined by the lateral axes (including but not limited to the accompanying layers) of the various layers of the display panel 300 (including but not limited to the surface 301 of the display panel 300).

[0557] In some non-limiting examples, at least one aperture 322 may be understood to include the absence or reduction of at least one of the thickness and capacity of a substantially opaque coating originally disposed across the display panel 300. In some non-limiting examples, at least one aperture 322 may be embodied as a signal transmission region 212 as described herein.

[0558] However, at least one aperture 322 is provided, through which at least one EM signal 331 can pass, such that it passes through surface 301. Therefore, at least one EM signal 331 can be considered to exclude any light that can extend along the plane defined by the lateral axis, including but not limited to any current that can be conducted laterally across at least one particle structure 150 through the display panel 300.

[0559] Furthermore, those skilled in the art will understand that at least one EM signal 331 can be distinguished from light itself, including but not limited to the current and electric field generated therefrom, because at least one EM signal 331 can convey some information content, including but not limited to an identifier by which at least one EM signal 331 can be distinguished from other EM signals 331, either alone or together with any of the other EM signals 331. In some non-limiting examples, this information content can be conveyed by specifying, changing, and / or modulating at least one of the wavelength, frequency, phase, timing, bandwidth, intensity, time of flight, resistance, capacitance, impedance, conductance, and / or other characteristics of at least one EM signal 331.

[0560] In some non-limiting examples, at least one EM signal 331 passing through at least one aperture 322 of the display panel 300 may include at least one photon, and in some non-limiting examples, may have a wavelength spectrum that is non-limitingly located within at least one of the visible spectrum, the IR spectrum, and the NIR spectrum. In some non-limiting examples, at least one EM signal 331 passing through at least one aperture 322 of the display panel 300 may have a wavelength located within at least one of the IR and NIR spectra.

[0561] In some non-limiting examples, at least one EM signal 331 passing through at least one hole 322 of the display panel 300 may include ambient light incident thereon.

[0562] In some non-limiting examples, at least one EM signal 331 exchanged through at least one hole 322 of the display panel 300 may be at least one of the following: transmitted and received by at least one display lower component 330.

[0563] In some non-limiting examples, at least one display lower component 330 may have the size of at least a single signal transmission region 212, but may be located not only under multiple of them, but also under at least one emission region 210 extending between them. Similarly, in some non-limiting examples, at least one display lower component 330 may have the size of at least a single aperture in aperture 322.

[0564] In some non-limiting examples, at least one under-display component 330 may include a receiver 330. r The receiver is adapted to receive and process at least one received EM signal 331 passing through at least one aperture 322 from outside the user equipment 310. r Receiver 330 of this type rNon-limiting examples include under-display cameras (UDCs) and sensors, including but not limited to IR sensors / detectors, NIR sensors / detectors, LIDAR sensing modules, fingerprint sensing modules, optical sensing modules, IR (proximity) sensing modules, iris recognition sensing modules, and facial recognition sensing modules, including but not limited to a portion thereof.

[0565] In some non-limiting examples, at least one under-display component 330 may include a transmitter 330. t The transmitter is adapted to transmit at least one transmit EM signal 331 from outside the user equipment 310 through at least one aperture 322. t 330 of these transmitters t Non-limiting examples include light sources, including but not limited to built-in flash, IR emitter, NIR emitter, LIDAR sensing module, fingerprint sensing module, optical sensing module, IR (proximity) sensing module, iris recognition sensing module and facial recognition sensing module, including but not limited to a portion thereof.

[0566] In some non-limiting examples, at least one receives an EM signal 331. r It may include at least one transmitted EM signal 331 t At least one segment, wherein the at least one segment is one of the following: reflected by an outer surface and otherwise returned to user equipment 310 (including but not limited to user 30).

[0567] In some non-limiting examples, at least one EM signal 331 (including but not limited to signals transmitted through at least one hole 322 of the display panel 300 outside the user equipment 310) passes through at least one hole 322 of the display panel 300. t At least one of the display components 330 emits those transmitting EM signals 331. t It can emit and receive EM signals 331 from the display panel 300. r Transmission is transmitted back to the receiver 330 via at least one aperture 322 of the display panel 300. r At least one display component 330.

[0568] In some non-limiting examples, the under-display component 330 may include an IR emitter and an IR sensor. In some non-limiting examples, such an under-display component 330 may include at least one of the following as a part, component, or module: a dot projector, a time-of-flight (ToF) sensor module (which may operate as a direct ToF and indirect ToF sensor), a vertical-cavity surface-emitting laser (VCSEL), a flood illuminator, an NIR imager, folded optics, and a diffraction grating.

[0569] In some non-limiting examples, multiple display under-display components 330 may exist within user equipment 310, the first of which may include a transmitter 330. t The transmitter is used to transmit at least one transmit EM signal 331 from outside the user equipment 310 through at least one aperture 322. t And the second of them may include receiver 330 r The receiver is used to receive at least one received EM signal 331 r In some non-limiting examples, this transmitter 330 t and receiver 330 r It can be implemented in component 330 under a single display.

[0570] In some non-limiting examples, the display panel 300 may include at least one signal exchange section 303 and at least one display section 307.

[0571] In some non-limiting examples, at least one display portion 307 may include a plurality of emission regions 210, which, in some non-limiting examples, are arranged in a lateral pattern. In some non-limiting examples, the emission regions 210 in at least one display portion 307 may correspond to (sub)pixels 1015 / 216 of the display panel 300.

[0572] In some non-limiting examples, at least one signal exchange portion 303 may include at least one emitting region 210 and at least one signal transmission region 212. In some non-limiting examples, at least one emitting region 210 in at least one signal exchange portion 303 may correspond to (sub)pixels 1015 / 216 of display panel 300, and in some non-limiting examples, may be arranged in a lateral pattern similar to (but not limited to) that in at least one display portion 307.

[0573] In some non-limiting examples, at least one display portion 307 may be adjacent to at least one signal exchange portion 303, and in some non-limiting examples, it may be separated by the at least one signal exchange portion.

[0574] In some non-limiting examples, at least one signal exchange portion 303 may be positioned near the end of the display panel 300, including but not limited to at least one of the edges and corners thereof. In some non-limiting examples, at least one signal exchange portion 303 may be positioned substantially centrally located in the lateral orientation of the display panel 300.

[0575] In some non-limiting examples, at least one display portion 307 may substantially surround at least one signal exchange portion 303, including but not limited to being combined with at least one other display portion 307.

[0576] In some non-limiting examples, at least one signal exchange portion 303 may be positioned near the end and configured such that at least one display portion 307 does not completely surround at least one signal exchange portion 303.

[0577] In some non-limiting examples, the pixel density of at least one emission region 210 of at least one signal exchange portion 303 may be substantially the same as the pixel density of at least one emission region 210 of at least one display portion 307 adjacent to at least one signal exchange portion 303, at least in the region substantially adjacent to the at least one signal exchange portion 303. In some non-limiting examples, the pixel density of the display panel 300 may be substantially uniform across the display panel. In at least some applications, there may be scenarios where at least one signal exchange portion 303 and at least one display portion 307 are required to have substantially the same pixel density, including but not limited to, such that the resolution of the display panel 300 is substantially the same across both at least one signal exchange portion 303 and at least one display portion 307 of the display panel.

[0578] Those skilled in the art will understand that a scenario exists where the layout of (sub)pixels 1015 / 216 in the signal exchange portion 303 of the display panel 300 is in some way similar to the layout of these (sub)pixels in the display portion 307 of the display panel 300, including but not limited to the size, shape, (color) order, and configuration of the (sub)pixels 1015 / 216, and wherein the spacing ("spacing") between adjacent (sub)pixels 1015 / 216 in the signal exchange portion 303 is one of the following: the same as the spacing of these (sub)pixels in the display portion 307, or an integer multiple thereof.

[0579] That said, the examples in this disclosure may be applicable in scenarios where the layout of (sub)pixels 1015 / 216 in the signal exchange section 303 may be substantially different from the layout of these (sub)pixels in the display section 307 of the display panel 300.

[0580] In some non-limiting examples, the pixel density of the signal exchange portion 303 of the display panel 300 may be less than the pixel density of the display portion 307 of the display panel 300.

[0581] In some non-limiting examples, at least one of the size, shape, configuration, and pitch of the (sub)pixels 1015 / 216 in the signal exchange portion 303 of the display panel 300 may be substantially the same as at least one of the size, shape, configuration, and pitch of the (sub)pixels 1015 / 216 in the display portion 307 of the display panel 300; however, the number of such (sub)pixels 1015 / 216 may be reduced in the signal exchange portion 303 of the display panel 300. In this scenario, in some non-limiting examples, a common FMM may be used to pattern at least one of the (sub)pixels 1015 / 216 in both the signal exchange portion 303 and the display portion 307, resulting in a reduction in manufacturing cost and complexity. In this scenario, in some non-limiting examples, those holes in the FMM corresponding to those (sub)pixels 1015 / 216 that are not present (omitted) in the signal exchange section 303 can be covered (blocked) when used with the signal exchange section 303 in order to substantially exclude the formation of at least one such (sub)pixel 1015 / 216.

[0582] In some non-limiting examples, at least one signal transmission region 212 may be formed in the region of the signal exchange section 303 where the formation of at least one (sub)pixel 415 / 216 has been substantially excluded.

[0583] In some non-limiting examples, the display panel 300 may further include at least one transition region (not shown) between at least one signal exchange portion 303 and at least one display portion 307, wherein the configuration of at least one of the emitting region 210 and the signal transmission region 212 therein may differ from the configuration of at least one of the at least one signal exchange portion 303 and at least one display portion 307. In some non-limiting examples, such a transition region may be omitted, such that the emitting region 210 may be provided as a substantially continuous repeating pattern across both the at least one signal exchange portion 303 and the at least one display portion 307.

[0584] In some non-limiting examples, at least one signal exchange portion 303 may have a polygonal profile, including but not limited to at least one of a substantially square configuration and a rectangular configuration.

[0585] In some non-limiting examples, at least one signal exchange portion 303 may have a curved profile, including but not limited to at least one of a substantially circular configuration, an oval configuration, and an elliptical configuration.

[0586] In some non-limiting examples, at least one signal transmission region 212 in the signal exchange section 303 may be configured to allow an EM signal having a wavelength (range) corresponding to the IR spectrum to pass through its entire cross-section.

[0587] In some non-limiting examples, at least one signal exchange section 303 may have a reduced number of backplane components, including but not limited to those with substantially no backplane components, including but not limited to TFT structure 206, including but not limited to metal traces, capacitors and other light-absorbing elements, including but not limited to opaque elements, the presence of which could otherwise interfere with the capture of EM signals by at least one display under-display component 330, including but not limited to the capture of images by a camera.

[0588] In some non-limiting examples, user equipment 310 may accommodate at least one transmitter 330. t For transmitting at least one transmitted EM signal 331 through at least one first signal transmission region 212. t The at least one first signal transmission region is located in the first signal exchange portion 303 outside the surface 301 and substantially corresponds to the first signal exchange portion in some non-limiting examples. In some non-limiting examples, the user equipment 310 may accommodate at least one receiver 330. r For receiving at least one received EM signal 331 from outside the surface 301 through at least one second signal transmission region 212. r The at least one second signal transmission region is located in the second signal switching section 303 and substantially corresponds to the second signal switching section in some non-limiting examples. In some non-limiting examples, at least one receiving EM signal 331 r It can be used with at least one emitted EM signal 331 reflected from the outer surface (including but not limited to user 30). t The same applies, including but not limited to, biometric authentication used for users.

[0589] In some non-limiting examples, at least one transmitter 330 t and at least one receiver 330 t At least one of them may be arranged behind at least one signal switching section 303, such that the EM signal (including but not limited to the IR signal) may be at least one of the following: transmitted and received through at least one signal switching section 303 of the display panel 300. In some non-limiting examples, at least one transmitter 330 t and at least one receiver 330 r All can be arranged behind a single signal switching section 303. In some non-limiting examples, the single signal switching section can extend along at least one configuration axis such that the common signal switching section extends across at least one transmitter 330. t and at least one receiver 330 r Both.

[0590] In some non-limiting examples, the display panel 300 may also include a non-display portion (not shown), which in some non-limiting examples may have substantially no emission area 210. In some non-limiting examples, the user device 310 may accommodate at least one of the following: under-display components 330 (including, but not limited to, a camera) and non-under-display components (including, but not limited to, a punch-hole camera), which in some non-limiting examples may be disposed in at least one of a cutout in the panel 300 and its bezel, arranged within the non-display portion.

[0591] In some non-limiting examples, the non-display portion may be arranged in relation to components 330 corresponding to multiple displays (including, but not limited to, transmitters 330). t and receiver 330 r The multiple signal switching sections 303 are adjacent to each other, and in some non-limiting examples, are arranged between the multiple signal switching sections.

[0592] In some non-limiting examples, the non-display portion may include a through-hole portion (not shown) that may be arranged to overlap with at least one of the under-display components and the non-display components. In some non-limiting examples, the display panel 300 may be substantially free of at least one of the layers, coatings, and components that would otherwise be present in at least one of the signal exchange portion 303 and at least one of the display portion 307, including but not limited to components of at least one of the back panel 202 and the front panel 201, the presence of which could otherwise interfere with at least one of the following: the transmission of EM signals through the panel 300, and the capture of EM signals by at least one of the under-display components and the non-display components, including but not limited to the capture of images by a camera. In some non-limiting examples, the overlay 170 of the display panel 300 (including but not limited to at least one of the following: a polarizer and a cover glass and a glass cover) may substantially extend across at least one signal exchange portion 303, at least one display portion 307, and the non-display portion, such that it can substantially extend across the display panel 300. In some non-limiting examples, the through-hole portion may have essentially no polarizer in order to enhance the transmission of light through it.

[0593] In some non-limiting examples, the non-display portion may include a non-through-hole portion, which in some non-limiting examples may be laterally arranged between the through-hole portion and the adjacent signal exchange portion 303. In some non-limiting examples, the non-through-hole portion may surround at least a portion of the periphery of the through-hole portion. In some non-limiting examples, the user equipment 310 may include, in a portion of the user equipment 310 corresponding to the non-through-hole portion of the display panel 300, at least one of the following: modules, components, and sensors.

[0594] In some non-limiting examples, the emitting region 210 in at least one signal exchange portion 303 may be electrically coupled to at least one TFT structure located in a non-via portion of the non-display portion. That is, in some non-limiting examples, the TFT structure 206 for actuating at least one sub-pixel 1015 / 216 in the signal exchange portion 303 may be repositioned outside the at least one signal exchange portion 303 and within the non-via portion of the display panel 300, such that substantially high transmission of light in at least one of the IR and NIR spectra may be guided through the non-emitting region 211 within the at least one signal exchange portion 303. In some non-limiting examples, the TFT structure 206 in the non-via portion may be electrically coupled to at least one sub-pixel 1015 / 216 in the signal exchange portion 303 via conductive traces. In some non-limiting examples, the emitter 330... t and receiver 330 r At least one of them can be arranged to be close to the non-via portion when in a lateral orientation, such that the distance that current travels between the TFT structure 206 and its associated (sub)pixels 1015 / 216 can be reduced.

[0595] Launch area In some non-limiting examples, including where the OLED device 200 may include a display module, the lateral orientation of the device 200 may be subdivided into a plurality of emission regions 210 of the device 200, wherein in each emission region 210, the longitudinal orientation of the structure of the device 200 is such that light is emitted from it when energized.

[0596] In some non-limiting examples, each emitting region 210 may have an associated pair of electrodes 220, 240 (one of which may act as an anode and the other as a cathode) and at least one semiconducting layer 230 between them. Such emitting regions 210 may emit light at a given wavelength spectrum and may correspond to one of pixel 1015 and its sub-pixels 216. In some non-limiting examples, multiple sub-pixels 216 that each correspond to light of different wavelengths (ranges) and emit such light may collectively form pixel 1015.

[0597] In some non-limiting examples, the wavelength spectrum may correspond to (but is not limited to) colors in the visible spectrum. Due to the different wavelengths (ranges) involved, light of a first wavelength (range) emitted by the first sub-pixel 216 of pixel 1015 may be performed differently from light of a second wavelength (range) emitted by the second sub-pixel 216 of the same pixel.

[0598] In some non-limiting examples, the active region 208 of each emission region 210 may be defined in the longitudinal direction by the first electrode 220 and the second electrode 240, and in the lateral direction by the presence of each of the first electrode 220, the second electrode 240 and at least one semiconducting layer 230 therebetween, i.e., the first electrode 220, the second electrode 240 and at least one semiconducting layer 230 therebetween laterally overlap.

[0599] Those skilled in the art will understand that the lateral orientation of the emission region 210, and therefore the lateral boundary of the active region 208, may not correspond to the entire lateral orientation of at least one of the first electrode 220 and the second electrode 240. Instead, the lateral orientation of the emission region 210 may substantially not exceed the lateral extent of the first electrode 220 and the second electrode 240. In some non-limiting examples, at least one of the following is true: some portions of the first electrode 220 may be covered by the PDL 209, and some portions of the second electrode 240 may not be disposed on at least one semiconductive layer 230, such that in at least one scenario, the emission region 210 may thereby be laterally constrained.

[0600] In some non-limiting examples, at least one of the various emission region layers can be deposited by deposition of the corresponding material constituting the emission region layer.

[0601] In some non-limiting examples, some of the semiconducting layers in at least one semiconducting layer 230 can be arranged in a desired pattern via vapor deposition of the corresponding emitter region layer material using a fine metal mask (FMM) having holes corresponding to the desired locations where emitter region layer material is to be deposited. In some non-limiting examples, multiple emitter region layers can be arranged in a similar pattern, including, but not limited to, by depositing their respective emitter region layer materials in their respective deposition stages using an FMM.

[0602] In some non-limiting examples, as discussed herein, the emission region layer material corresponding to at least one of the first electrode 220 and the second electrode 240 (including, but not limited to, the second electrode 240) may be deposited by pre-depositing a patterned coating 110 by patterning the material through FMM vapor deposition, the fine metal mask having holes corresponding to the desired locations where the patterned coating 110 is to be deposited, and then depositing the emission region layer material using one of an open mask and a maskless deposition process.

[0603] In some non-limiting examples, the patterned coating 110 may be adapted to influence the tendency of the vapor flux 532 of the deposited material 531 (from which the emission region layer material may be composed) to be deposited on the surface of the exposed layer, including but not limited to the initial adhesion probability of the deposited material 531, which does not exceed the initial adhesion probability of the deposited material 531 on the surface of the exposed layer 11 of at least one semiconductive layer 230.

[0604] In some non-limiting examples, the first electrode 220 may be disposed on the exposed layer surface 11 of the device 200, and in some non-limiting examples, disposed within at least a portion of the lateral orientation of the emission region 210. In some non-limiting examples, at least within the lateral orientation of the emission region 210 of the (sub)pixels 1015 / 216, the exposed layer surface 11 may include a TFT insulating layer 207 constituting various TFT structures 206 for driving circuitry corresponding to the emission region 210 of a single display (sub)pixel 1015 / 216 during the deposition of the first electrode 220.

[0605] In some non-limiting examples, the TFT insulating layer 207 may be formed with openings extending therethrough to allow the first electrode 220 to be electrically coupled to TFT electrodes including, but not limited to, the TFT drain electrode.

[0606] Those skilled in the art will understand that the driving circuit may include multiple TFT structures 206. Figure 2 For the sake of simplicity, only one TFT structure 206 may be shown, but those skilled in the art will understand that such TFT structure 206 may represent at least one of the following: a plurality of such TFT structures constituting a driving circuit and at least one of its components.

[0607] In some non-limiting examples, the end of the first electrode 220 may be covered by at least one PDL 209, such that a portion of at least one PDL 209 may be inserted between the first electrode 220 and at least one semiconductive layer 230, such that such end of the first electrode 220 may be located outside the active region 208 of the associated emission region 210.

[0608] In some non-limiting examples, at least one semiconductive layer 230 (including, but not limited to, at least one of layers 231, 233, 235, 237, 239) may be deposited on the exposed layer surface 11 of the device 200, including at least a portion of the lateral orientation of such emission regions 210 of the (sub)pixels 1015 / 216. In some non-limiting examples, at least within the lateral orientation of the emission regions 210 of the (sub)pixels 1015 / 216, such exposed layer surface 11 may include a first electrode 220 when depositing such at least one semiconductive layer 230.

[0609] In some non-limiting examples, at least one semiconductive layer 230 may also extend beyond the lateral orientation of the emission region 210 of the (sub)pixels 1015 / 216 and at least partially within the lateral orientation of the surrounding non-emission region 211. In some non-limiting examples, such exposed layer surfaces 11 of such surrounding non-emission regions 211 may include PDL 209 when at least one semiconductive layer 230 is deposited.

[0610] In some non-limiting examples, the second electrode 240 may be disposed above the exposed layer surface 11 of the device 200, including at least a portion of the lateral orientation of the emission region 210 of the (sub)pixels 1015 / 216. In some non-limiting examples, at least within the lateral orientation of the emission region 210 of the (sub)pixels 1015 / 216, such exposed layer surface 11 may include at least one semiconductive layer 230 when the second electrode 220 is deposited.

[0611] In some non-limiting examples, the second electrode 240 may also extend beyond the lateral orientation of the emission region 210 of the (sub)pixels 1015 / 216 and at least partially within the lateral orientation of the surrounding non-emission region 211. In some non-limiting examples, the exposed layer surface 11 of such surrounding non-emission region 211 may include PDL 209 during the deposition of the second electrode 240.

[0612] In some non-limiting examples, the second electrode 240 may extend over most of the lateral orientation of the surrounding non-emission region 211, including but not limited to substantially all of it.

[0613] In some non-limiting examples, the respective emitting regions 210 of device 200 may be laterally patterned. In some non-limiting examples, the pattern may extend along a first lateral direction. In some non-limiting examples, the pattern may also extend along a second lateral direction, which in some non-limiting examples may extend at an angle relative to the first lateral direction. In some non-limiting examples, the second lateral direction may be substantially perpendicular to the first lateral direction. In some non-limiting examples, the pattern may have a plurality of elements arranged in such a pattern, each element being characterized by at least one of the following, including but not limited to: the wavelength of light emitted by its emitting region 210, the shape of such emitting regions 210, their dimensions (along at least one of the first lateral direction and the second lateral direction), their orientation (relative to at least one of the first lateral direction and the second lateral direction), and their spacing from previous elements in the pattern (relative to at least one of the first lateral direction and the second lateral direction). In some non-limiting examples, the pattern may be repeated in at least one of the first lateral direction and the second lateral direction.

[0614] In some non-limiting examples, each individual emission region 210 of device 200 may be associated with and driven by a corresponding driving circuit within the backplane 202 of device 200, the corresponding driving circuit being used to drive the OLED structure for the associated emission region 210. In some non-limiting examples, including but not limited to, where the emission regions 210 may be arranged in a regular pattern extending in both a first (row) lateral direction and a second (column) lateral direction, signal lines corresponding to each row of emission regions 210 extending in the first lateral direction and signal lines corresponding to each column of emission regions 210 extending in the second lateral direction may exist in the backplane 202. In this non-limiting configuration, the signal on the row select line can activate the corresponding gate of the switch TFT structure 206 electrically coupled thereto, and the signal on the data line can activate the corresponding source of the switch TFT structure 206 electrically coupled thereto, such that the signal on the row select line / data line pair can be electrically coupled to and activate the anode of the OLED structure of the emission region 210 associated with such pair through the positive terminal of the power supply, thereby causing photons to be emitted from it, and its cathode is electrically coupled to the negative terminal of the power supply 204.

[0615] In some non-limiting examples, a single display pixel 1015 may include three sub-pixels 216, which in some non-limiting examples may correspond to a single sub-pixel 216 of each of three colors, including but not limited to at least one of the following: R (red) sub-pixel 216 R G (green) subpixel 216 G And B (blue) subpixel 216 BIn some non-limiting examples, a single display pixel 1015 may include four sub-pixels 216, each sub-pixel corresponding to a single sub-pixel 216 of each of the two colors (including, but not limited to, R (red) sub-pixel 216). R And B (blue) subpixel 216 B And the two sub-pixels 216 of the third color (including but not limited to G (green) sub-pixel 216) G In some non-limiting examples, a single display pixel 1015 may include four sub-pixels 216, which in some non-limiting examples may correspond to a single sub-pixel 216 of each of the three colors, including but not limited to at least one of the following: R (red) sub-pixel 216 R G (green) subpixel 216 G And B (blue) subpixel 216 B And the fourth W (white) sub-pixel 216 W .

[0616] In some non-limiting examples, the emission spectrum of light emitted by a given (sub)pixel 1015 / 216 may correspond to a color that can represent (sub)pixel 1015 / 216. In some non-limiting examples, the wavelength of light may not correspond to such a color, but further processing may be performed in a manner obvious to those skilled in the art to convert the wavelength to such a corresponding wavelength.

[0617] In some non-limiting examples, the emission spectrum of light emitted by a given (sub)pixel 1015 / 216 (corresponding to a color that can represent (sub)pixel 1015 / 216) may be associated with at least one of the following: the structure and composition of at least one semiconductive layer 230 (including, but not limited to, at least one EML 235) extending between its first electrode 220 and second electrode 240. In some non-limiting examples, at least one EML 235 of at least one semiconductive layer 230 may be adjusted to facilitate the emission of light having an emission spectrum corresponding to a color that can represent (sub)pixel 1015 / 216. In some non-limiting examples, R (red) subpixel 216 R EML 235 may include R (red) EML material, including but not limited to a host material doped with R (red) emitter material. In some non-limiting examples, G (green) subpixel 216 G EML 235 may include G (green) EML material, including but not limited to a host material doped with G (green) emitter material. In some non-limiting examples, B (blue) subpixel 216 B EML 235 may include B (blue) EML material, including but not limited to a host material doped with B (blue) emitter material.

[0618] In some non-limiting examples, at least one of at least one semiconductive layer 230 (including but not limited to HIL 231, HTL 233, EML 235, ETL 237 and EIL 239) may be selected to have at least one characteristic in the longitudinal orientation (including but not limited to its presence, absence, thickness, composition and order) to facilitate the emission of EM radiation from it, the light having a wavelength spectrum corresponding to a color that can represent a given sub-pixel 216, the color including but not limited to at least one of R (red), G (green) and B (blue).

[0619] In some non-limiting examples, according to the additive color model, the emission of light having wavelength spectra corresponding to a variety of colors selected from R (red), G (green) and B (blue) can promote the emission of light having wavelength spectra corresponding to different colors, including but not limited to W (white) (red + green + blue), Y (yellow) (red + green), C (cyan) (green + blue) and M (magenta) (blue + red).

[0620] In some non-limiting examples, the exposed layer surface 11 of device 100 may be exposed to the vapor flux 532 of the deposited material 531, including but not limited to one of the open mask and maskless deposition processes.

[0621] In some non-limiting examples, at least one semiconductive layer 230 may be deposited over the exposed layer surface 11 of the device 200 in at least a portion of the emission region 210, and in some non-limiting examples, the exposed layer surface includes a first electrode 220.

[0622] In some non-limiting examples, the exposed surface 11 of device 200 (which may include at least one semiconductive layer 230 in some non-limiting examples) may be exposed to the vapor flux 412 of patterned material 411, including but not limited to the use of a shadow mask 415 to form a patterned coating 110 in the first portion 101. Regardless of whether a shadow mask 415 is used, the patterned coating 110 may be substantially confined in its lateral orientation to the signal transmission region 212.

[0623] In some non-limiting examples, the lateral orientation of at least one emission region 210 may extend across and include associated at least one TFT structure 206 for driving the emission region 210 along data and scan lines (not shown), which, in some non-limiting examples, may be formed of at least one of Cu and TCO.

[0624] In some non-limiting examples, (sub)pixels 1015 / 216 may be arranged side-by-side. In some non-limiting examples, the (color) order of the sub-pixels 216 of the first pixel 1015 may be the same as the (color) order of the sub-pixels 216 of the second pixel 1015. In some non-limiting examples, the (color) order of the sub-pixels 216 of the first pixel 1015 may be different from the (color) order of the sub-pixels 216 of the second pixel 1015.

[0625] In some non-limiting examples, the sub-pixels 216 of adjacent pixels 1015 may be aligned in at least one of row arrangement, column arrangement and array arrangement.

[0626] In some non-limiting examples, the first at least one sub-pixel in the row and column of the aligned sub-pixel 216 of the adjacent pixel 1015 may include a sub-pixel 216 of the same and different colors.

[0627] In some non-limiting examples, a first at least one sub-pixel in the row and column of the aligned sub-pixel 216 of the adjacent pixel 1015 may be aligned with at least one of a second at least one and a third at least one sub-pixel in the row and column of the aligned sub-pixel 216 of the adjacent pixel 1015.

[0628] In some non-limiting examples, the first at least one sub-pixel in the row and column of the aligned sub-pixel 216 of the adjacent pixel 1015 may be one of the following: offset or misaligned with at least one of the second at least one and the third at least one sub-pixel in the row and column of the aligned sub-pixel 216 of the adjacent pixel 1015.

[0629] In some non-limiting examples, the sub-pixels 216 of the adjacent pixels 1015 of such first at least one sub-pixel, second at least one sub-pixel and third at least one sub-pixel in at least one row and column may be arranged such that the corresponding sub-pixels 216 of each of the first at least one sub-pixel, second at least one sub-pixel and third at least one sub-pixel in at least one row and column may have the same color.

[0630] In some non-limiting examples, the sub-pixels 216 of the adjacent pixels 1015 of at least one of the first, second, and third sub-pixels in a row and column may be arranged such that the corresponding sub-pixels 216 of each of the first, second, and third sub-pixels in a row and column may have different colors.

[0631] In some non-limiting examples, in at least one signal transmission region 212 of the display panel 300, at least one signal exchange portion 303 may be disposed between a plurality of emission regions 210. In some non-limiting examples, at least one signal transmission region 212 may be disposed between adjacent (sub)pixels 1015 / 216. In some non-limiting examples, adjacent sub-pixels 216 surrounding at least one signal transmission region 212 may form part of the same pixel 1015. In some non-limiting examples, adjacent sub-pixels 216 surrounding at least one signal transmission region 212 may be associated with different pixels 1015.

[0632] In some non-limiting examples, regions of the closed coating 140 that may substantially lack a second electrode material (“cathode-free regions”), including but not limited to at least one signal transmission region 212, may exhibit photoelectronic properties different from other regions (including but not limited to at least one emission region 210). In some non-limiting examples, such cathode-free regions may, however, include some second electrode material, including but not limited to the form of at least one particulate structure 150 and a discontinuous layer 160 of at least one instance of such particulate structure 150.

[0633] In some non-limiting examples, this can be achieved by laser ablation of the second electrode material. However, in some non-limiting examples, laser ablation can produce a cloud of debris that can affect the vapor deposition process.

[0634] In some non-limiting examples, this can be achieved by using an FMM to set a patterned coating 110 (which in some non-limiting examples may be a nucleation inhibition coating (NIC)) in a certain pattern on the exposed surface 11 of at least one semiconductive layer 230, and then depositing a deposition material 531 for forming a second electrode 240 on the exposed surface.

[0635] In some non-limiting examples, the patterned coating 110 may be adapted to influence the tendency of the vapor flux 532 of the deposited material 531 to be deposited on the surface of the exposed layer, including but not limited to the initial adhesion probability of the deposited material 531, which does not exceed the initial adhesion probability of the deposited material 531 on the surface of the exposed layer 11 of at least one semiconductive layer 230.

[0636] In some non-limiting examples, the patterned coating 110 may be deposited in a pattern corresponding to the lateral orientation (including but not limited to) of the first portion 101 of at least some signal transmission regions in the transmission region 212.

[0637] In some non-limiting examples, the patterned coating 110 may be deposited in multiple stages, each stage using different FMMs that define different patterns within the first portion 101, the multiple stages corresponding to different subsets of the signal transmission region 212.

[0638] In some non-limiting examples, after depositing the patterned coating 110 (all stages), the display panel 300 may be subjected to a vapor flux 532 of the deposited material 531 in one of an aperture mask and a maskless deposition process to form a second electrode 240 for each of the emission regions 210 corresponding to the (sub)pixels 1015 / 216 in at least the second portion 102 of the lateral orientation but not in the first portion 101 of the lateral orientation.

[0639] In some non-limiting examples, although not shown, the overlay 170 may be disposed on at least one of the second electrode 240 and the patterned coating 110. In some non-limiting examples, although not shown, the overlay 170 may be deposited at least partially across the lateral extent of the optoelectronic device 200, in some non-limiting examples covering the second electrode 240 in the second portion 102, and in some non-limiting examples at least partially covering at least one particulate structure 150 and forming an interface with the patterned coating 110 at its exposed layer surface 11 in the first portion 101.

[0640] Non-launch area In some non-limiting examples, various emitting regions 210 of the device 200 may be substantially surrounded and separated by at least one non-emitting region 211 in at least one lateral direction, wherein at least one of the structures and configurations of the device 200 shown along the longitudinal orientation may vary to substantially suppress light emission therefrom.

[0641] In some non-limiting examples, non-emission region 211 may include those regions that are substantially without emission region 210 in a lateral orientation.

[0642] In some non-limiting examples, the longitudinal topology of various layers of at least one semiconductive layer 230 may be varied to define at least one emission region 210 surrounded by at least one non-emission region 211 (at least in one lateral direction).

[0643] Now, a non-limiting example of a specific implementation of the longitudinal orientation of a device 200 applied to an emission region 210 corresponding to a single display (sub)pixel 1015 / 216 of display 200 will be described. Although features of this specific implementation are shown as specific to emission region 210, those skilled in the art will understand that in some non-limiting examples, more than one emission region 210 may cover common features.

[0644] In some non-limiting examples, the lateral orientation of the surrounding non-emission region 211 can be characterized by the presence of the corresponding PDL 209.

[0645] In some non-limiting examples, the thickness of the PDL 209 may increase from a minimum at the end covering the first electrode 220 to a maximum beyond the lateral extent of the first electrode 220. In some non-limiting examples, the thickness variation of at least one PDL 209 may define a valley shape centered on the emission region 210. In some non-limiting examples, the valley shape may constrain the field of view (FOV) of the light emitted by the emission region 210.

[0646] While the PDL 209 is generally shown herein as having a linearly sloping surface to form a valley-shaped configuration defining the emission region 210 surrounded thereby, those skilled in the art will understand that in some non-limiting examples, at least one of the shape, aspect ratio, thickness, width, and configuration of such a PDL 209 may vary. In some non-limiting examples, the PDL 209 may be formed having either substantially steep portions or more gently sloping portions. In some non-limiting examples, such a PDL 209 may be configured to extend substantially vertically away from the surface on which it is deposited, which may cover at least one edge of the first electrode 220. In some non-limiting examples, such a PDL 209 may be configured to deposit at least one semiconductive layer 230 thereon by solution processing techniques, including but not limited to printing, including but not limited to inkjet printing.

[0647] In some non-limiting examples, PDL 209 may be deposited substantially above TFT insulating layer 207, although, as shown, in some non-limiting examples, PDL 209 may also extend over at least a portion of the deposited first electrode 220 (including, but not limited to, its outer edge).

[0648] In some non-limiting examples, the lateral extent of at least one of the non-emission regions 211 may be at least the lateral extent of the emission region 210 interposed between them, and in some non-limiting examples exceed that lateral extent, including but not limited to multiples thereof.

[0649] In some non-limiting examples, the thickness of at least one PDL 209 in at least one signal transmission region 212, (in some non-limiting examples) the thickness of at least one non-emission region 211 (which are placed between adjacent emission regions 210, at least in regions laterally spaced therefrom in some non-limiting examples) and (in some non-limiting examples; although not shown) the thickness of the TFT insulating layer 207 may all be reduced in order to increase at least one of the transmittance and transmittance angle relative to and through the layer of the display panel 300 to facilitate the transmission of light through it.

[0650] sedimentary layer In some non-limiting examples, where the patterned coating 110 is confined in its lateral extent to the first portion 101, in the second portion 102 of the device 100, a deposited layer 130 comprising deposited material 531 may be provided as a closed coating 140 on the exposed surface 11 of the underlying layer 710.

[0651] In some non-limiting examples, the deposition layer 130 may include deposition material 531.

[0652] In some non-limiting examples, the deposited material 531 may contain an element selected from at least one of the following elements: potassium (K), sodium (Na), lithium (Li), Ba, cesium (Cs), Yb, Ag, gold (Au), Cu, Al, Mg, Zn, Cd, tin (Sn), and yttrium (Y). In some non-limiting examples, the element may include at least one of K, Na, Li, Ba, Cs, Yb, Ag, Au, Cu, Al, and Mg. In some non-limiting examples, the element may include at least one of Cu, Ag, and Au. In some non-limiting examples, the element may be Cu. In some non-limiting examples, the element may be Al. In some non-limiting examples, the element may include at least one of Mg, Zn, Cd, and Yb. In some non-limiting examples, the element may include at least one of Mg, Ag, Al, Yb, and Li. In some non-limiting examples, the element may include at least one of Mg, Ag, and Yb. In some non-limiting examples, the element may include at least one of Mg and Ag. In some non-limiting examples, the element may be Ag.

[0653] In some non-limiting examples, the deposition material 531 may include a pure metal. In some non-limiting examples, the deposition material 531 may be (substantially) pure Ag. In some non-limiting examples, substantially pure Ag may have a purity of at least about one of 95%, 99%, 99.9%, 99.99%, 99.999%, and 99.9995%. In some non-limiting examples, the deposition material 531 may be (substantially) pure Mg. In some non-limiting examples, substantially pure Mg may have a purity of at least about one of 95%, 99%, 99.9%, 99.99%, 99.999%, and 99.9995%.

[0654] In some non-limiting examples, the deposited material 531 may include an alloy. In some non-limiting examples, the alloy may be one of an Ag-containing alloy, a Mg-containing alloy, and an AgMg-containing alloy. In some non-limiting examples, the AgMg-containing alloy may have an alloy composition ranging from about 1:10 (Ag:Mg) to about 10:1 by volume.

[0655] In some non-limiting examples, the deposition material 531 may include other metals replacing Ag and those combined with Ag. In some non-limiting examples, the deposition material 531 may include an alloy of Ag with at least one other metal. In some non-limiting examples, the deposition material 531 may include an alloy of Ag with at least one of Mg and Yb. In some non-limiting examples, this alloy may be a binary alloy having a composition between about 5 vol% and 95 vol% Ag, with the remainder being other metals. In some non-limiting examples, the deposition material 531 may include Ag and Mg. In some non-limiting examples, the deposition material 531 may include an Ag:Mg alloy with a composition between about 1:10 and 10:1 by volume. In some non-limiting examples, the deposition material 531 may include Ag and Yb. In some non-limiting examples, the deposition material 531 may include a Yb:Ag alloy with a composition between about 1:20 and 10:1 by volume. In some non-limiting examples, the deposition material 531 may include Mg and Yb. In some non-limiting examples, the deposition material 531 may include a Mg:Yb alloy. In some non-limiting examples, the deposition material 531 may include Ag, Mg, and Yb. In some non-limiting examples, the deposition layer 130 may include an Ag:Mg:Yb alloy.

[0656] In some non-limiting examples, the deposition layer 130 may include at least one additional element. In some non-limiting examples, this additional element may be a non-metallic element. In some non-limiting examples, the non-metallic element may be at least one of O, S, N, and C. Those skilled in the art will understand that in some non-limiting examples, such additional elements may bind to the deposition layer 130 as contaminants due to their presence in at least one of the source material, the equipment used for deposition, and the vacuum chamber environment. In some non-limiting examples, the concentration of such additional elements may be limited to below a threshold concentration. In some non-limiting examples, such additional elements may form compounds with other elements in the deposition layer 130. In some non-limiting examples, the concentration of the non-metallic element in the deposition material 531 may be no more than one of about 1%, 0.1%, 0.01%, 0.001%, 0.0001%, 0.00001%, 0.000001%, and 0.0000001%. In some non-limiting examples, the deposition layer 130 may have a composition in which the combined amount of O and C may be no more than one of about 10%, 5%, 1%, 0.1%, 0.01%, 0.001%, 0.0001%, 0.00001%, 0.000001%, and 0.0000001%.

[0657] It has been found that reducing the concentration of certain non-metallic elements in the deposition layer 130, particularly when the deposition layer 130 may be substantially composed of at least one of metals and metal alloys, can promote the selective deposition of the deposition layer 130. Without wishing to be bound by any particular theory, it can be assumed that certain non-metallic elements (such as at least one of O and C in some non-limiting examples) can be deposited on the surface of the patterned coating 110 to act as nucleation sites for the metallic elements used in the deposition layer 130 when present in the vapor flux 532 of the deposition layer 130 in the deposition chamber and in the environment. It can be assumed that reducing the concentration of such non-metallic elements that can act as nucleation sites can advantageously reduce the amount of deposited material 531 deposited on the exposed surface 11 of the patterned coating 110.

[0658] In some non-limiting examples, the deposited material 531 may be deposited on a metal-containing lower layer 710. In some non-limiting examples, the deposited material 531 and the lower layer 710 below it may include a common metal.

[0659] In some non-limiting examples, the deposition layer 130 may include multiple layers of deposition material 531. In some non-limiting examples, the deposition material 531 of the first layer of the plurality of layers may be different from the deposition material 531 of the second layer of the plurality of layers. In some non-limiting examples, the deposition layer 130 may include a multilayer coating. In some non-limiting examples, such a multilayer coating may be one of Yb / Ag, Yb / Mg, Yb / Mg:Ag, Yb / Yb:Ag, Yb / Ag / Mg, and Yb / Mg / Ag.

[0660] In some non-limiting examples, the deposited material 531 may include a metal having a bond dissociation energy of no more than one of about 300 kJ / mol, 200 kJ / mol, 165 kJ / mol, 150 kJ / mol, 100 kJ / mol, 50 kJ / m...

Claims

1. A layered semiconductor device comprising a mixed ligand compound, the mixed ligand compound comprising: a cyclophosphonitrile core portion, a first ligand portion, and a second ligand portion, wherein the first ligand portion and the second ligand portion are each bonded to the core portion.

2. The device according to claim 1, wherein at least one of the first ligand portion and the second ligand portion is a fluorine (F) portion.

3. The device according to any one of claims 1 and 2, wherein each of the first ligand portion and the second ligand portion independently comprises at least one of: F, chlorine (Cl), a hydroxyl group, a substituted alkyl group, an unsubstituted alkyl group, a substituted fluoroalkyl group, an unsubstituted fluoroalkyl group, a substituted cycloalkyl group, an unsubstituted cycloalkyl group, a substituted fluorocycloalkyl group, an unsubstituted fluorocycloalkyl group, a substituted heterocyclic alkyl group, an unsubstituted heterocyclic alkyl group, a substituted fluoroheterocyclic alkyl group, an unsubstituted fluoroheterocyclic alkyl group, an unsubstituted fluoroheterocyclic alkyl group, a substituted alkoxy group, an unsubstituted alkoxy group, a substituted fluoroalkoxy group, an unsubstituted fluoroalkoxy group, a substituted aryloxy group, an unsubstituted aryloxy group, Substituted fluoroaryloxy groups, unsubstituted fluoroaryloxy groups, substituted heteroaryloxy groups, unsubstituted heteroaryloxy groups, substituted fluoroaryloxy groups, unsubstituted fluoroaryloxy groups, substituted aryl groups, unsubstituted aryl groups, substituted fluoroaryl groups, unsubstituted fluoroaryl groups, substituted alkylsilyl groups, unsubstituted alkylsilyl groups, substituted alkylsiloxy groups, unsubstituted alkylsiloxy groups, amino groups, amine groups, alkylamine groups, arylamine groups, nitrile groups, azophosphatidyl groups, thioalkyl groups, pentafluorothioalkyl groups, thioether groups, sulfonyl groups, thiol groups, alkylthioyl groups, trifluoromethylthioyl groups, carbonyl groups, siloxane groups, silyl groups, and organosilicon groups.

4. The device according to any one of claims 1 and 2, wherein each of the first ligand portion and the second ligand portion comprises: a connection base portion. R B End portion R T and arranged in the connecting base portion R B and the end portion R T The middle part between R D .

5. The device of claim 4, wherein each of the first ligand portion and the second ligand portion is independently represented by formula (E-1): (E-1) in: * Indicates the attachment point with the core portion of the cyclophosphamide. R B This refers to the connecting base portion. R D This refers to the middle portion, and R T This refers to the end portion.

6. The device according to any one of claims 4 and 5, wherein R B It includes one of the following: oxygen (O), nitrogen (N), sulfur (S), substituted alkylene, unsubstituted alkylene, substituted fluoroalkylene, unsubstituted fluoroalkylene, substituted cycloalkylene, unsubstituted cycloalkylene, substituted arylene, unsubstituted arylene, substituted heteroarylene, and unsubstituted heteroarylene.

7. The device according to any one of claims 4 to 6, wherein R B Selected from: -O- and -O-CH2-.

8. The device according to any one of claims 4 to 7, wherein R D Including at least one of the following: O, ether, substituted alkylene, unsubstituted alkylene, substituted fluoroalkylene, unsubstituted fluoroalkylene, substituted cycloalkylene, unsubstituted cycloalkylene, substituted arylene, unsubstituted arylene, substituted phenyl, unsubstituted phenyl, substituted biphenyl, unsubstituted biphenyl, substituted dinaphthylene, unsubstituted dinaphthylene, substituted heteroarylene, and unsubstituted heteroarylene.

9. The device according to any one of claims 4 to 8, wherein R D This can be expressed by equation (EB-1): (EB-1) in: X Each of the following is independently one of: H, D, F, and CF3; a It is an integer between 0 and 6; and b It is an integer between 0 and 12; and a and b The sum of them is at least 1.

10. The device according to any one of claims 4 to 9, wherein R T It includes at least one of the following: substituted alkyl, unsubstituted alkyl, branched fluoroalkyl, non-branched fluoroalkyl, substituted heterocyclic alkyl, unsubstituted heterocyclic alkyl, substituted alkoxy, unsubstituted alkoxy, branched siloxy, non-branched siloxy, branched fluoroalkoxy, non-branched fluoroalkoxy, fluoroaryl, polyfluorothioalkyl and fluorocyclic alkyl.

11. The device according to any one of claims 4 to 10, wherein R T Including at least one of the following: F, H, CF2H, CF3, OCF3, CF2CF3, CF2CF2H, CH2CF2H and CH2CF3.

12. The device according to any one of claims 1 to 11, wherein the first ligand portion and the second ligand portion independently comprise at least one of: a fluoroalkyl portion and a fluoroaryl portion.

13. The device according to any one of claims 1 to 12, wherein the first ligand portion is represented by formula (FCM-1): (FCM-1) in: t It is an integer between 1 and 3; u It is an integer between 5 and 12; and Z It represents one of the following: H, D, and F.

14. The device according to any one of claims 1 to 13, wherein the second ligand portion is represented by formula (FCM-2): (FCM-2) in: v It is an integer between 1 and 3; w It is an integer between 3 and 15; and Z It represents one of the following: H, D, and F.

15. The device according to any one of claims 1 to 14, wherein the mixed ligand compound comprises at least one of a plurality of the first ligand portions and the second ligand portions.

16. The device according to any one of claims 1 to 15, wherein the number of the second ligand portion in the mixed ligand compound does not exceed the number of the first ligand portion therein.

17. The device according to any one of claims 1 to 16, wherein the number of F atoms in the first ligand portion and the second ligand portion differs by no more than one of 2, 4, 6, 8, 9, 11, 13, 15, 16, 18, 20, 24 and 48.

18. The device according to any one of claims 1 to 17, wherein the number of CF2 portions of the first ligand portion and the second ligand portion differs by no more than one of 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11 and 22.

19. The device according to any one of claims 1 to 18, wherein the number of C atoms in the first ligand portion and the second ligand portion differs by no more than one of 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11 and 22.

20. The device according to any one of claims 1 to 19, wherein the difference in molar weight attributable to each of the first ligand portion and the second ligand portion does not exceed one of about 20 g / mol, 40 g / mol, 50 g / mol, 100 g / mol, 150 g / mol, 200 g / mol, 300 g / mol, 400 g / mol, 500 g / mol, 600 g / mol, 700 g / mol, 800 g / mol, 900 g / mol, and 1,100 g / mol.

21. The device according to any one of claims 1 to 20, wherein the difference in molar weight attributable to each of the first ligand portion and the second ligand portion does not exceed one of about 20 g / mol, 40 g / mol, 50 g / mol, 100 g / mol, 150 g / mol, 200 g / mol, 300 g / mol, 400 g / mol, 500 g / mol, 600 g / mol, 700 g / mol, 800 g / mol, 900 g / mol, and 1,100 g / mol.

22. The device according to any one of claims 1 to 21, wherein the degree of fluorination of the first ligand portion and the second ligand portion differs by no more than one of about 0.03, 0.09, 0.14, 0.18, 0.22, 0.28, 0.36, 0.56, 0.71, 0.78, 0.82, 0.99, 1.56, 1.64, 1.78, 1.85, 1.98, 2.34, 3.56, 3.64 and 3.

70.

23. The device according to any one of claims 1 to 22, the device comprising a composition comprising a plurality of compounds, wherein at least one of the plurality of compounds is the mixed ligand compound, and the plurality of compounds comprises at least one common ligand moiety.

24. The device of claim 23, wherein at least one of the plurality of compounds comprises at least one first ligand portion of the mixed ligand compound.

25. The device of claim 24, wherein the number of first ligand portions of the at least one of the plurality of compounds is equal to the sum of the number of first ligand portions and the number of second ligand portions of the mixed ligand compound.

26. The device according to any one of claims 24 and 25, wherein the ligand portion of at least one of the plurality of compounds is substantially composed of the first ligand portion.

27. The device according to any one of claims 1 to 26, wherein the mixed ligand compound comprises a second ligand portion, and the remainder of the ligand portion of the mixed ligand compound is substantially composed of the first ligand portion.

28. The device of claim 27, wherein the majority of the composition consists substantially of the mixed ligand compounds, and the remainder of the composition consists substantially of at least one of the plurality of compounds.

29. The device according to any one of claims 27 and 28, wherein the mixed ligand compound comprises one of about 50%, 60%, 70%, 75%, 80%, 85%, 90%, 95%, 98%, and 99% of the composition.

30. The device according to any one of claims 1 to 27, wherein the mixed ligand compound comprises a first ligand portion to a second ligand portion in a ratio of approximately 1:1 based on the number of the ligand portions in such a compound.

31. The device of claim 30, wherein the at least one of the plurality of compounds comprises a first ligand portion and a second ligand portion in a ratio of at least about 1:2, 2:1, 1:5, and 5:1 of the number of ligand portions contained in such compound.

32. The device according to any one of claims 30 and 31, wherein the percentage of the mixed ligand compound in the composition is the percentage of at least any other compound in the composition.

33. The device according to any one of claims 23 to 32, wherein the difference in molar weight of each of the plurality of compounds in the composition is not more than one of about 4,300 g / mol, 4,000 g / mol, 3,700 g / mol, 3,500 g / mol, 3,100 g / mol, 2,800 g / mol, 2,400 g / mol, 2,200 g / mol, 1,800 g / mol, 1,400 g / mol, 1,200 g / mol, 900 g / mol, 800 g / mol, 700 g / mol, 600 g / mol, 500 g / mol, 400 g / mol, 300 g / mol, 200 g / mol, 100 g / mol, 40 g / mol, and 20 g / mol.

34. The device according to any one of claims 23 to 33, wherein the polydispersity of said compound is not more than one of about 2.08, 2.06, 2.04, 2.02 and 2.

00.

35. The device according to any one of claims 23 to 34, wherein the plurality of compounds in the composition each exhibit substantially the same vapor pressure.

36. The device according to any one of claims 23 to 35, wherein at least one of the plurality of compounds comprises: a first ligand portion comprising a fluoroalkyl portion, and a second ligand portion comprising at least one of: a substituted alkyl portion, an unsubstituted alkyl portion, a substituted fluoroalkyl portion, an unsubstituted fluoroalkyl portion, a substituted fluoroaryl portion, an unsubstituted fluoroaryl portion, a substituted aryl portion, an unsubstituted aryl portion, a substituted polycyclic aromatic portion, an unsubstituted polycyclic aromatic portion, a substituted binaphthyl portion, an unsubstituted binaphthyl portion, a substituted biphenyl portion, an unsubstituted biphenyl portion, a substituted adamantyl portion, and an unsubstituted adamantyl portion.

37. The device according to any one of claims 23 to 36, wherein the core portion of each of the plurality of compounds is a cyclophosphonitrile moiety.

38. The device according to any one of claims 1 to 37, the device further comprising: A patterned coating comprising the mixed ligand compound, the patterned coating being disposed on the surface of a first layer of a lower layer in a laterally oriented first portion thereof; as well as A sedimentary layer composed of sedimentary material deposited on the second part; The first part is essentially free of the sealing coating of the deposited material.

39. The device of claim 38, wherein the patterned coating is adapted to reduce the initial adhesion probability of the vapor flux of the conductive deposited material.

40. The device according to any one of claims 1 to 39, the device further comprising a transmitting region, the transmitting region comprising: substrate; First electrode and second electrode, and At least one semiconductive layer is disposed between the first electrode and the second electrode; The first electrode is disposed between the substrate and the at least one semiconducting layer.

41. The device of claim 38, wherein the first portion does not include the lateral orientation of the emission region.

42. The device of claim 40, wherein the second electrode comprises at least a portion of the deposited layer as a layer thereof.

43. The device of claim 38, wherein the first portion includes the lateral orientation of the transmitting region.

44. The device of claim 38, further comprising an auxiliary electrode, the auxiliary electrode comprising the deposited layer as a layer thereof.

45. A composition comprising a plurality of compounds, wherein each of the compounds comprises a cyclophosphonitrile core moiety and at least one ligand moiety bonded to the cyclophosphonitrile core moiety, wherein the plurality of compounds comprises at least one common ligand moiety.

46. ​​The composition of claim 45, wherein at least one of the plurality of compounds comprises at least one of a first ligand portion and a second ligand portion.

47. The composition of claim 45 or 46, wherein the composition comprises a first compound having at least one first ligand portion and at least one second ligand portion, and a second compound having the at least one first ligand portion of the first compound.

48. The composition according to any one of claims 45 to 47, wherein at least one compound of the composition contains a ligand portion that is not present in the other compound of the composition.

49. The composition according to claim 47 or 48, wherein the number of the first ligand portions of the second compound is equal to the sum of the number of the first ligand portions of the first compound and the number of the second ligand portions.

50. The composition according to any one of claims 47 to 49, wherein the amount of the second ligand portion in at least one of the first compound and the second compound does not exceed the amount of the first ligand portion therein.

51. The composition according to any one of claims 47 to 50, wherein the ligand portion of the first compound is substantially composed of the first ligand portion and the second ligand portion.

52. The composition according to any one of claims 47 to 51, wherein the ligand portion of the second compound is substantially composed of the first ligand portion.

53. The composition according to any one of claims 47 to 52, wherein the first compound comprises a second ligand portion, and the remainder of the ligand portion of the first compound is substantially composed of the first ligand portion.

54. The composition according to any one of claims 47 to 53, wherein the majority of the composition is composed of the first compound and the remainder of the composition is composed of the second compound.

55. The composition according to any one of claims 47 to 54, wherein the first compound constitutes one of about 50%, 60%, 70%, 75%, 80%, 85%, 90%, 95%, 98%, and 99% of the composition.

56. The composition according to claim 46 or 47, wherein each of the plurality of compounds comprises: a first ligand portion and a second ligand portion.

57. The composition according to any one of claims 47 to 56, wherein the first compound comprises a first ligand portion to a second ligand portion in a ratio of about 1:1 based on the amount of the ligand portions in such a compound.

58. The composition according to any one of claims 47 to 57, wherein the composition comprises at least one additional compound comprising a first ligand portion and a second ligand portion in a ratio of about 1:2, 2:1, 1:5, and 5:1, constituting the ligand portions of such a compound.

59. The composition according to any one of claims 47 to 58, wherein the percentage of the first compound in the composition is the percentage of at least any other compound in the composition.

60. The composition according to any one of claims 45 to 59, wherein the difference in molar weight of each of the plurality of compounds in the composition is not more than one of about 4,300 g / mol, 4,000 g / mol, 3,700 g / mol, 3,500 g / mol, 3,100 g / mol, 2,800 g / mol, 2,400 g / mol, 2,200 g / mol, 1,800 g / mol, 1,400 g / mol, 1,200 g / mol, 900 g / mol, 800 g / mol, 700 g / mol, 600 g / mol, 500 g / mol, 400 g / mol, 300 g / mol, 200 g / mol, 100 g / mol, 40 g / mol, and 20 g / mol.

61. The composition according to any one of claims 45 to 60, wherein the polydispersity of the composition is not more than one of about 2.08, 2.06, 2.04, 2.02 and 2.

00.

62. The composition according to any one of claims 45 to 61, wherein the compounds in the composition each exhibit substantially the same vapor pressure.

63. The composition of claim 45, wherein the at least one ligand portion comprises: a linker portion R B End portion R T and arranged in the connecting base portion R B and the end portion R T The middle part between R D .

64. The composition of claim 63, wherein the connecting base portion R B It includes one of the following: O, N, S, substituted alkylene, unsubstituted alkylene, substituted fluoroalkylene, unsubstituted fluoroalkylene, substituted cycloalkylene, unsubstituted cycloalkylene, substituted arylene, unsubstituted arylene, substituted heteroarylene, and unsubstituted heteroarylene.

65. The composition according to claim 63 or 64, wherein the end portion R T It is one of the following: CF3, CF2CF2, CH2CF2H and CF2H.

66. The composition according to any one of claims 45 to 65, wherein the at least one ligand portion comprises at least one of a fluoroalkyl portion and a fluoroaryl portion.

67. The composition according to any one of claims 46 to 66, wherein the first ligand portion and the second ligand portion are F-containing portions.

68. The composition according to any one of claims 46 to 67, wherein the second ligand portion is substantially free of fluorinated sp. 2 C atom.

69. The composition according to any one of claims 46 to 68, wherein the second ligand portion is substantially free of F.

70. The composition according to any one of claims 45 to 69, wherein at least one of the plurality of compounds comprises: a first ligand portion comprising a fluoroalkyl portion, and a second ligand portion comprising at least one of: a substituted alkyl portion, an unsubstituted alkyl portion, a substituted fluoroalkyl portion, an unsubstituted fluoroalkyl portion, a substituted fluoroaryl portion, an unsubstituted fluoroaryl portion, a substituted aryl portion, an unsubstituted aryl portion, a substituted polycyclic aromatic portion, an unsubstituted polycyclic aromatic portion, a substituted binaphthyl portion, an unsubstituted binaphthyl portion, a substituted biphenyl portion, an unsubstituted biphenyl portion, a substituted adamantyl portion, and an unsubstituted adamantyl portion.

71. The composition according to any one of claims 46 to 70, wherein the second ligand portion comprises an F atom number not exceeding the F atom number of the first ligand portion.

72. The composition according to any one of claims 46 to 71, wherein the second ligand portion has a degree of fluorination not exceeding that of the first ligand portion.

73. The composition according to any one of claims 46 to 72, wherein the number of F atoms in the first ligand portion and the second ligand portion differs by no more than one of 2, 4, 6, 8, 9, 11, 13, 15, 16, 18, 20, 24 and 48.

74. The composition according to any one of claims 46 to 73, wherein the number of CF2 portions of the first ligand portion and the second ligand portion differs by no more than one of 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11 and 22.

75. The composition according to any one of claims 46 to 74, wherein the number of C atoms of the first ligand portion and the second ligand portion differs by no more than one of 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11 and 22.

76. The composition according to any one of claims 46 to 75, wherein the difference in molar weight attributable to each of the first ligand portion and the second ligand portion does not exceed one of about 20 g / mol, 40 g / mol, 50 g / mol, 100 g / mol, 150 g / mol, 200 g / mol, 300 g / mol, 400 g / mol, 500 g / mol, 600 g / mol, 700 g / mol, 800 g / mol, 900 g / mol, and 1,100 g / mol.

77. The composition according to any one of claims 46 to 76, wherein the degree of fluorination of the first ligand portion and the second ligand portion differs by no more than one of about 0.03, 0.09, 0.14, 0.18, 0.22, 0.28, 0.36, 0.56, 0.71, 0.78, 0.82, 0.99, 1.56, 1.64, 1.78, 1.85, 1.98, 2.34, 3.56, 3.64, and 3.

70.

78. The composition according to any one of claims 45 to 77, wherein the cyclophosphonitrile core portion is one of a cyclic triphosphonitrile portion and a cyclic tetraphosphonitrile portion.

79. A device comprising the composition according to any one of claims 45 to 78.

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