Domestic fusing energy estimation method and system of fuze module
By establishing a three-dimensional heat conduction physical model and a phased solution method, the problem of insufficient accuracy in estimating the melting energy was solved, and the accurate calculation of the melting energy was achieved, ensuring the low energy consumption and high reliability design of the fuse module.
Patent Information
- Application Number
- CN202511313251.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-09-15
- Publication Date
- 2025-12-30
AI Technical Summary
Existing technologies lack a physical model that accurately describes the energy transfer and dissipation process of micro-fuses on semiconductor chips, resulting in inaccurate estimation of fusing energy and failure to meet the design requirements of fuse systems.
A three-dimensional physical model of heat conduction, including a metal fuse layer, an insulating layer, and a semiconductor substrate layer, is established. By quantitatively defining material parameters and boundary conditions, the heat transfer path is calculated, an energy balance differential equation is constructed, the melting time is solved in stages, and the melting energy is accurately characterized by using area compensation factor and series thermal resistance calculation methods.
This significantly improves the accuracy and reliability of fusing energy estimation, proving that metal-simulated fuses have the advantages of lower energy consumption and faster response, providing a reliable theoretical basis for fuse module design and improving product performance.
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Figure CN121237275A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the technical field of electronic device simulation testing, and more specifically, to a method and system for estimating the melting energy of a simulated fuse filament in a fuse module. Background Technology
[0002] In modern advanced fuse systems, to achieve miniaturization, integration, and high reliability, miniature fuses (simulated fuses) integrated on semiconductor chips are commonly used as the core actuator for detonation control. The working principle of this type of system is to apply a controlled electrical pulse instantaneously to the miniature fuse, causing it to melt, vaporize, and eventually physically disconnect due to Joule heating, thereby forming or changing the circuit state and ultimately triggering the subsequent detonation sequence.
[0003] Existing technical solutions often draw on fuse technology in semiconductor integrated circuits. Determining the fusing energy often relies on a large number of repetitive experimental tests. By continuously trying different combinations of current and pulse width, the fusing effect is observed, and a roughly reliable parameter window is obtained statistically. This method not only consumes a lot of time, manpower, and material costs, but also lacks in-depth theoretical model guidance, making the experiments quite blind. The data obtained is often only applicable to specific batches and specific designs, with poor universality and predictability.
[0004] The existing technology has the following main problems: First, it lacks a physical model that can accurately describe the dynamic transfer and dissipation of energy in the micro-fuse and its surrounding multilayer material structure (such as substrate and insulating layer). Most estimates only consider the thermal energy required for the fuse to heat up, while seriously ignoring the critical path of heat conduction through the insulating layer to the semiconductor substrate and finally dissipation into the packaging system. This results in theoretically estimated energy being far lower than actual requirements, causing design failure. Second, even if some advanced designs consider heat loss, they have failed to establish an analytically solvable mathematical model that takes into account the energy balance of the fuse's own heat capacity, the substrate's equivalent heat capacity, and continuous heat dissipation. This makes it impossible to make rapid and quantitative preliminary estimates. In addition, the existing technology fails to effectively distinguish between the two different energy stages of initial melting and reliable breaking, ignoring the fact that forming a reliable break requires heating the material to a temperature far above its melting point. This makes it impossible to guarantee the foolproof operation of the fuse based on the energy calculated from the melting point.
[0005] Therefore, developing a theoretical method that can accurately estimate the melting energy of simulated metal wires and guide their design has become an urgent technical need in this field. Summary of the Invention
[0006] The purpose of this invention is to provide a method and system for estimating the melting energy of a simulated fuse wire in a fuse module. The multilayer heat conduction physical model comprehensively considers the heat conduction characteristics of the metal fuse layer, the insulating layer, and the semiconductor substrate layer. By quantitatively defining material parameters and isothermal boundary conditions, it achieves accurate characterization of the heat transfer path, significantly improving the accuracy and reliability of melting energy estimation. This invention aims to solve the problem of insufficient accuracy in traditional melting energy estimation caused by ignoring edge effects and three-dimensional thermal diffusion in existing technologies.
[0007] This invention is implemented as follows: a method for estimating the melting energy of a simulated fuse filament in a fuse module, applied to electronic simulation equipment, specifically includes the following steps:
[0008] S101: Based on the physical structure of simulated fuse, a three-dimensional heat conduction physical model is established, which includes a metal filament layer, an insulating layer and a semiconductor substrate layer. It accurately characterizes the entire process of heat being generated from the metal filament layer and then conducted to the isothermal heat sink through the silicon dioxide insulating layer and the silicon substrate layer. The model is quantitatively defined by specific material parameters and boundary conditions.
[0009] S102: Calculate the effective heating area of the metal fuse. Obtain the initial value by multiplying its length and width. Then, compensate for the area based on the process edge effect. Next, consider the insulating layer and the semiconductor substrate as thermal resistances connected in series along the heat dissipation path and calculate their thermal conductivities respectively. Finally, calculate the heat capacity of the system.
[0010] S103: Construct the core energy balance differential equation for solving the fusing time and energy using the calculated data. The left side of the equation is the total input electrical energy, expressed as P×t, where P is the heating power calculated based on the fuse resistance and the selected constant fusing current, and t is the fusing time. The heat calculation on the right side of the equation includes three parts: heat absorption of the aluminum fuse, equivalent heat absorption of the silicon substrate, and average heat dissipation loss.
[0011] S104: The melting time is estimated by solving the energy balance equation in stages. The target temperature is set as the melting point of aluminum, 660℃, at which point ΔT=640K. Substituting this into the equation P×t=Q, the melting time is estimated. material +1 / 2G total The melting time t1 is obtained by solving the equation ×ΔT×t. Then the target temperature is increased to 1200℃. At this time, ΔT=1180K represents the requirement for complete melting. The equation is solved again to obtain the final melting time t2. This value is the time parameter for reliable melting under constant current.
[0012] S105: Combine the calculated complete melting time t2 with the heating power P2 at melting time t2, and use formula E fuse=P2×t2 to obtain the final estimated value of the fusing energy, and then compare this value with the known benchmark. Based on the result that the calculated fusing energy is much smaller than the benchmark parameter of polysilicon fuse, the estimated value of the fusing energy of the fuse is then output.
[0013] Furthermore, in S101, based on the simulated physical structure of the fused filament, a three-dimensional heat conduction physical model is established, comprising a metal fused filament layer, an insulating layer, and a semiconductor substrate layer, including:
[0014] The metal filament layer is made of aluminum with a thickness of 0.91 μm, the insulating layer is made of silicon dioxide with a thickness of 1 μm and a thermal conductivity of 10 W / m·K, and the semiconductor substrate is made of silicon with a thickness of 0.25 mm and a thermal conductivity of 150 W / m·K.
[0015] The lower surface of the semiconductor substrate is set as an isothermal boundary condition, with the temperature maintained at a constant 20°C. This serves as the final heat sink in the entire heat dissipation path. The study also ensures that the entire process of heat conduction from the metal filament layer through the silicon dioxide insulating layer and the silicon substrate layer to the isothermal heat sink is characterized. Through the quantitative definition of specific material parameters and boundary conditions, an accurate physical framework and boundary conditions are provided for subsequent quantitative calculations.
[0016] Further, in S102, the effective heating area of the molten metal wire is calculated. An initial value is obtained by multiplying its length and width, and area compensation is performed based on this value according to the process edge effect, including:
[0017] By introducing compensation factors determined based on a large amount of experimental data or high-precision finite element analysis, accurate modeling of the microscopic thermal field distribution is completed, reflecting the actual heat transfer paths in the horizontal and vertical directions.
[0018] The corrected effective area, as a core parameter, was simultaneously applied to multiple key calculation stages, ensuring the model's internal consistency, and was also used to calculate the insulation layer G. ox Thermal conductivity of the substrate G si The volume of the heated aluminum and the equivalent heated volume of the silicon substrate below it are calculated as basic parameters.
[0019] Furthermore, considering the insulating layer and semiconductor substrate as thermal resistances connected in series along the heat dissipation path, their thermal conductivities are calculated separately, and finally the system's heat capacity is calculated, including:
[0020] After heat is generated from the molten metal wire, it must pass sequentially through the SiO2 insulating layer and the Si substrate layer to reach the temperature-controlled packaging substrate. This path constitutes a typical thermal resistance series model. The thermal conductivity of each layer is calculated using the formula G = k·A / T, where k is the thermal conductivity of the material, A is the effective area, and T is the layer thickness. Then, G... total =(1 / G ox +1 / Gsi ) -1 Calculate the total thermal conductivity;
[0021] The heat capacity of the aluminum filament itself is directly calculated by multiplying its mass by its specific heat capacity. al =m al ·c al Due to the thermal diffusion effect, only a portion of the silicon substrate is significantly heated. By introducing the concept of equivalent heating volume: area × equivalent diffusion depth, its equivalent mass is calculated. Then, by combining the specific heat capacity of the material and taking the average value of the temperature gradient, the equivalent heat capacity is obtained.
[0022] Furthermore, in S103, the heat calculation on the right side of the equation comprises three parts: the heat absorbed by the aluminum fuse, the equivalent heat absorbed by the silicon substrate, and the average heat dissipation loss, including:
[0023] The heat absorption of the aluminum fuse is the heat required for the aluminum fuse material to rise from its initial temperature to its target melting point temperature;
[0024] The equivalent heat absorption of the silicon substrate is the heat required for the equivalent mass of the silicon substrate, which is also heated, to rise from its initial temperature to its average temperature.
[0025] The average heat loss is the heat continuously dissipated through the series heat conductor constant temperature heat sink during the entire heating time t. Since its heat dissipation power increases linearly with temperature, its average value is taken.
[0026] Furthermore, its expression is P×t, where P is the heating power calculated based on the fuse resistance and the selected constant fusing current, and t is the fusing time; the heat calculation on the right side of the equation includes three parts: the heat absorbed by the aluminum fuse, the equivalent heat absorbed by the silicon substrate, and the average heat dissipation loss, and its expression is:
[0027]
[0028] Part 1: Heat absorption by aluminum fused wire:
[0029] m al The quality of the aluminum fuse (c) al Specific heat capacity of aluminum, representing the amount of heat required to raise the temperature of 1 kg of aluminum by 1 Kelvin; ΔT: the difference between the target temperature and the initial ambient temperature; m al ×c al ×ΔT: The amount of heat required for the aluminum filament to rise from its initial temperature to its target melting point temperature;
[0030] Part Two: Equivalent Heat Absorption of Silicon Substrate
[0031] m si_eff The equivalent mass of the silicon substrate that is subsequently heated, which is the mass of the portion of silicon actually heated during this time, estimated based on the thermal diffusion depth; csi : Specific heat capacity of silicon; ΔT / 2: Average temperature rise of the silicon substrate; m si_eff ×c si ×2ΔT: The heat absorbed by the equivalent mass of the heated silicon substrate.
[0032] Part Three: Continuous Heat Loss
[0033] G total Total thermal conductivity from the heat source to the isothermal heat sink; 1 / 2 × G total ×ΔT: Average heat dissipation power during time t; 1 / 2×G total ×ΔT×t: The total heat lost through heat conduction during the entire heating time t.
[0034] Furthermore, in S104, the target temperature is then increased to 1200℃. At this point, ΔT = 1180K represents the requirement for complete fusing. The equation is solved again to obtain the final fusing time t2, which is the time parameter for reliable fusing under constant current, including:
[0035] The core energy balance differential equation was established by solving different melting targets. The first target temperature was set as the melting point of aluminum, 660℃, at which point ΔT = 640K. The heating power P and the calculated thermal conductivity G were then used to determine the optimal temperature. total Heat capacity parameter m al ×c al and m si-eff ×c si Substituting the temperature difference ΔT = 640K into the energy balance equation;
[0036] We obtain the equation P×t=Q in terms of time t. material +1 / 2G total ×ΔT×t, where Q material The melting time t1 is the sum of the heat absorbed by the aluminum filament and the equivalent heat absorbed by the silicon substrate. The initial melting time t1 is obtained by solving the equation.
[0037] Then, a second, higher target temperature was set to simulate the energy required for complete melting and the generation of a sufficient gap. The temperature difference ΔT was updated to 1180K, and the equation was substituted again to obtain the time t2 required for complete melting. This time t2 is the estimated melting time required under the selected constant current.
[0038] Furthermore, in S105, this value is compared with a known benchmark. Based on the calculated fusing energy being significantly lower than the polysilicon fuse benchmark parameter, an estimated fusing energy value for the fuse is output, including:
[0039] The key parameters of the calculated metal simulated fuse melting energy were objectively compared and verified with recognized benchmark data. Specifically, a quantitative comparison was made with the typical parameter of 750 mA·ms of traditional polycrystalline silicon fuses, revealing significant differences in energy values.
[0040] To determine whether the fusing energy product of the traditional polycrystalline silicon fuse (750 mA·ms) is 2-3 times that of the metal simulated fuse, and to empirically demonstrate whether the metal simulated fuse has the core advantages of lower energy demand and more sensitive response;
[0041] After completing the comparative verification and confirming its superiority, the estimated value of the fusing energy, which has been theoretically calculated and verified, is officially output. The estimated value of the fusing energy is directly applied to the detonation circuit design of the fuse module as a key design parameter, guiding the setting of a safe and reliable current amplitude and pulse width operating range.
[0042] Compared with the prior art, the present invention provides a method and system for estimating the melting energy of a simulated fuse filament in a fuse module, which has the following advantages:
[0043] 1. By establishing an accurate multilayer heat conduction physical model and employing area compensation factor and series thermal resistance calculation methods, the problem of insufficient accuracy caused by neglecting edge effects and three-dimensional thermal diffusion in traditional fuse energy estimation is solved. The multilayer heat conduction physical model comprehensively considers the thermal conduction characteristics of the metal fuse layer, insulating layer and semiconductor substrate layer. By quantitatively defining material parameters and isothermal boundary conditions, the accurate characterization of heat transfer path is achieved, which significantly improves the accuracy and reliability of fuse energy estimation and provides a more reliable theoretical basis for fuse module design.
[0044] 2. By adopting a staged temperature solution method, the melting time and complete melting time are calculated by setting two target temperatures of 660℃ and 1200℃ respectively. This fully simulates the physical process of the fuse from melting to complete melting, which not only accurately reflects the energy requirements of the actual melting process, but also proves that the metal simulated fuse has the advantages of lower energy consumption and faster response by comparing and verifying with the reference parameters of traditional polycrystalline silicon fuses. This provides important technical support for the low-energy consumption and high-reliability design of the fuse module and significantly improves the product performance.
[0045] A fusing energy estimation system for a simulated fuse wire of a fuse module, used to execute the above-described fusing energy estimation method, the fusing energy estimation system comprising:
[0046] The model building module is used to create a three-dimensional heat conduction model that includes a metal filament layer, an insulating layer, and a substrate layer, and to define material parameters and isothermal boundary conditions.
[0047] The parameter calculation module is used to calculate the effective heating area after area compensation, the series thermal conductivity of each layer, and the equivalent heat capacity of the system.
[0048] The equation building module is used to construct energy balance equations that include heat absorption by the aluminum filament, equivalent heat absorption by the silicon substrate, and average heat dissipation loss.
[0049] The time calculation module is used to solve the melting time at different target temperatures in stages and obtain reliable melting time parameters;
[0050] The energy output module is used to calculate the melting energy value and compare it with the polysilicon benchmark before outputting the final estimated result.
[0051] Specifically, the parameter calculation module includes:
[0052] Area compensation units are used to accurately model the microscopic thermal field distribution by introducing compensation factors determined based on a large amount of experimental data or high-precision finite element analysis, reflecting the actual heat transfer paths in the horizontal and vertical directions.
[0053] The thermal conductivity calculation unit is used to apply the corrected effective area as a core parameter to multiple key calculation stages simultaneously, ensuring the internal consistency of the model. It is also used to calculate the insulation layer G. ox Thermal conductivity of the substrate G si ;
[0054] The heat capacity calculation unit is used to calculate the heat capacity C of the aluminum filament itself. al =m al ×c al The equivalent heat capacity of the silicon substrate was calculated by introducing the concept of equivalent heating volume.
[0055] The data processing unit treats the insulating layer and semiconductor substrate as thermal resistances connected in series along the heat dissipation path, calculates the thermal conductivity of each layer using the formula G = k·A / T, and then uses G... total =(1 / G ox +1 / G si ) -1 The total thermal conductivity is obtained and used as a basic parameter to calculate the volume of the heated aluminum and the equivalent heated volume of the silicon substrate below it. Attached Figure Description
[0056] Figure 1 This is a flowchart illustrating a method for estimating the melting energy of a simulated fuse wire in a fuse module, as proposed in this invention.
[0057] Figure 2 The flowchart of the method for estimating the melting energy of the simulated fuse wire in the fuze module proposed in this invention is shown below. The initial value is obtained by multiplying the length and width of the fuse wire, and area compensation is performed based on the process edge effect.
[0058] Figure 3This is a schematic diagram of the structure of a simulated fuse filament fusing energy estimation system for a fuse module proposed in this invention;
[0059] Figure 4 This is a schematic diagram of the parameter calculation module in a simulated fuse energy estimation system for a fuse module proposed in this invention. Detailed Implementation
[0060] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the invention.
[0061] The implementation of the present invention will be described in detail below with reference to specific embodiments.
[0062] In the accompanying drawings of this embodiment, the same or similar reference numerals correspond to the same or similar components. In the description of this invention, it should be understood that if terms such as "upper," "lower," "left," and "right" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, they are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, the terms used to describe positional relationships in the drawings are only for illustrative purposes and should not be construed as limiting this invention. For those skilled in the art, the specific meaning of the above terms can be understood according to the specific circumstances.
[0063] Reference Figure 1-2 As shown, a method for estimating the melting energy of a simulated fuse filament in a fuse module, applied to electronic simulation equipment, specifically includes the following steps:
[0064] S101: Based on the physical structure of simulated fuse, a three-dimensional heat conduction physical model is established, which includes a metal filament layer, an insulating layer and a semiconductor substrate layer. It accurately characterizes the entire process of heat being generated from the metal filament layer and then conducted to the isothermal heat sink through the silicon dioxide insulating layer and the silicon substrate layer. The model is quantitatively defined by specific material parameters and boundary conditions.
[0065] Among them, based on the simulated physical structure of the fused filament, a three-dimensional heat conduction physical model is established, including a metal fused filament layer, an insulating layer, and a semiconductor substrate layer, including:
[0066] The metal filament layer is made of aluminum with a thickness of 0.91 μm, the insulating layer is made of silicon dioxide with a thickness of 1 μm and a thermal conductivity of 10 W / m·K, and the semiconductor substrate is made of silicon with a thickness of 0.25 mm and a thermal conductivity of 150 W / m·K.
[0067] The lower surface of the semiconductor substrate is set as an isothermal boundary condition, with the temperature maintained at 20°C. This serves as the final heat sink in the entire heat dissipation path. The entire process of heat conduction from the metal filament layer through the silicon dioxide insulating layer and the silicon substrate layer to the isothermal heat sink is characterized. The quantitative definition of specific material parameters and boundary conditions provides an accurate physical framework and boundary conditions for subsequent quantitative calculations.
[0068] S102: Calculate the effective heating area of the metal fuse. Obtain the initial value by multiplying its length and width. Then, compensate for the area based on the process edge effect. Next, consider the insulating layer and the semiconductor substrate as thermal resistances connected in series along the heat dissipation path and calculate their thermal conductivities respectively. Finally, calculate the heat capacity of the system.
[0069] The effective heating area of the molten metal wire is calculated by multiplying its length and width to obtain an initial value, and then area compensation is performed based on the process edge effect, including:
[0070] By introducing compensation factors determined based on a large amount of experimental data or high-precision finite element analysis, accurate modeling of the microscopic thermal field distribution is completed, reflecting the actual heat transfer paths in the horizontal and vertical directions.
[0071] The corrected effective area, as a core parameter, was simultaneously applied to multiple key calculation stages, ensuring the model's internal consistency, and was also used to calculate the insulation layer G. ox Thermal conductivity of the substrate G si The volume of the heated aluminum and the equivalent heated volume of the silicon substrate below it are calculated as basic parameters.
[0072] The specific area compensation method is as follows: Due to the edge effect of the thermal field and the uneven distribution of current density, the actual heat generation and heat diffusion efficiency of the fuse tip and edge regions is higher than that of the central region, resulting in an effective heat dissipation area larger than its initial geometric area. To accurately simulate this physical effect, an area compensation factor is introduced. This factor is a coefficient greater than 1, determined based on experience or more refined simulations. In this example, the initial calculated value is 26μm × 0.45μm = 2.7μm. 2 The area, after being multiplied by a compensation factor of approximately 1.1, is corrected to 23 μm. 2 The compensated area is used not only to calculate the thermal conductivity G of the insulation layer and the substrate. ox and G si It is also used to calculate the volume of the heated aluminum and the equivalent volume of the heated silicon substrate, ensuring the consistency of the entire model in calculating heat conduction and heat capacity, thereby significantly improving the fit and accuracy of the estimation results to the actual microstructure and avoiding the calculation deviation of heat dissipation capacity due to underestimation of area.
[0073] S103: Construct the core energy balance differential equation for solving the fusing time and energy using the calculated data. The left side of the equation is the total input electrical energy, expressed as P×t, where P is the heating power calculated based on the fuse resistance and the selected constant fusing current, and t is the fusing time. The heat calculation on the right side of the equation includes three parts: heat absorption of the aluminum fuse, equivalent heat absorption of the silicon substrate, and average heat dissipation loss.
[0074] The heat calculation on the right side of the equation comprises three parts: the heat absorbed by the aluminum filament, the equivalent heat absorbed by the silicon substrate, and the average heat dissipation loss, including:
[0075] The heat absorption of aluminum fuse is the amount of heat that the aluminum fuse material needs to absorb to rise from its initial temperature to its target melting point temperature;
[0076] The equivalent heat absorption of a silicon substrate is the amount of heat required for the equivalent mass of the silicon substrate, which is also heated, to rise from its initial temperature to its average temperature.
[0077] The average heat loss is the heat continuously dissipated through the series heat conductor constant temperature heat sink during the entire heating time t. Since its heat dissipation power increases linearly with temperature, its average value is taken.
[0078] S104: The melting time is estimated by solving the energy balance equation in stages. The target temperature is set as the melting point of aluminum, 660℃, at which point ΔT=640K. Substituting this into the equation P×t=Q, the melting time is estimated. material +1 / 2G total The melting time t1 is obtained by solving the equation ×ΔT×t. Then the target temperature is increased to 1200℃. At this time, ΔT=1180K represents the requirement for complete melting. The equation is solved again to obtain the final melting time t2. This value is the time parameter for reliable melting under constant current.
[0079] The target temperature is then raised to 1200℃, at which point ΔT = 1180K represents the requirement for complete fusing. Solving the equation again yields the final fusing time t2, which is the time parameter for reliable fusing under constant current, including:
[0080] The core energy balance differential equation was established by solving different melting targets. The first target temperature was set as the melting point of aluminum, 660℃, at which point ΔT = 640K. The heating power P and the calculated thermal conductivity G were then used to determine the optimal temperature. total Heat capacity parameter m al ×c al and m si-eff ×c si Substituting the temperature difference ΔT = 640K into the energy balance equation;
[0081] We obtain the equation P×t=Q in terms of time t. material +1 / 2G total×ΔT×t, where Q material The melting time t1 is the sum of the heat absorbed by the aluminum filament and the equivalent heat absorbed by the silicon substrate. The initial melting time t1 is obtained by solving the equation.
[0082] Then, a second, higher target temperature was set to simulate the energy required for complete melting and the generation of a sufficient gap. The temperature difference ΔT was updated to 1180K, and the equation was substituted again to obtain the time t2 required for complete melting. This time t2 is the estimated melting time required under the selected constant current.
[0083] S105: Combine the calculated complete melting time t2 with the heating power P2 at melting time t2, and use formula E fuse =P2×t2 to obtain the final estimated value of the fusing energy. This value is then compared with a known benchmark. The calculated fusing energy is much smaller than the benchmark parameters of the polycrystalline silicon fuse. The estimated value of the fuse's fusing energy is then output. By establishing an accurate multilayer heat conduction physical model and using area compensation factor and series thermal resistance calculation methods, the problem of insufficient accuracy caused by ignoring edge effects and three-dimensional thermal diffusion in traditional fusing energy estimation is solved. The multilayer heat conduction physical model comprehensively considers the thermal conduction characteristics of the metal fuse layer, insulating layer and semiconductor substrate layer. By quantitatively defining material parameters and isothermal boundary conditions, the accurate characterization of the heat transfer path is achieved, which significantly improves the accuracy and reliability of fusing energy estimation and provides a more reliable theoretical basis for fuse module design.
[0084] In S102 of this embodiment, the insulating layer and the semiconductor substrate are considered as thermal resistances connected in series along the heat dissipation path, their thermal conductivities are calculated respectively, and finally the heat capacity of the system is calculated, including:
[0085] After heat is generated from the molten metal wire, it must pass sequentially through the SiO2 insulating layer and the Si substrate layer to reach the temperature-controlled packaging substrate. This path constitutes a typical thermal resistance series model. The thermal conductivity of each layer is calculated using the formula G = k·A / T, where k is the thermal conductivity of the material, A is the effective area, and T is the layer thickness. Then, G... total =(1 / G ox +1 / G si ) -1 Calculate the total thermal conductivity;
[0086] The heat capacity of the aluminum filament itself is directly calculated by multiplying its mass by its specific heat capacity. al =m al ·c al Due to the thermal diffusion effect, only a portion of the silicon substrate is significantly heated. By introducing the concept of equivalent heating volume: area × equivalent diffusion depth, its equivalent mass is calculated. Then, by combining the specific heat capacity of the material and taking the average value of the temperature gradient, the equivalent heat capacity is obtained.
[0087] In S103 of this embodiment, the expression is P×t, where P is the heating power calculated based on the fuse resistance and the selected constant fusing current, and t is the fusing time; the heat calculation on the right side of the equation includes three parts: the heat absorbed by the aluminum fuse, the equivalent heat absorbed by the silicon substrate, and the average heat dissipation loss, and its expression is:
[0088]
[0089] Part 1: Aluminum fused wire heat absorption
[0090] m al Mass of aluminum fused wire (unit: kilograms);
[0091] c al Specific heat capacity of aluminum (unit: joules / kg·Kelvin, J / kg·K); represents the amount of heat required to raise the temperature of 1 kg of aluminum by 1 Kelvin;
[0092] ΔT: The difference between the target temperature and the initial ambient temperature (unit: Kelvin, K or Celsius, °C); for example, if heating from 20 °C to 660 °C, then ΔT = 640 K;
[0093] m al ×c al ×ΔT: The amount of heat required for the aluminum filament to rise from its initial temperature to its target melting point temperature;
[0094] Part Two: Equivalent Heat Absorption of Silicon Substrate
[0095] m si_eff : The equivalent mass of the silicon substrate that is heated along with it (unit: kilogram); it is not equal to the mass of the entire silicon substrate, but rather the mass of the portion of silicon that is actually heated during this time, estimated based on the thermal diffusion depth.
[0096] c si Specific heat capacity of silicon (unit: joules / kg·Kelvin, J / kg·K);
[0097] ΔT / 2: The average temperature rise of the silicon substrate. Due to the temperature gradient in the silicon substrate (higher temperature near the fuse and lower temperature further away), half of the highest temperature rise is taken as its average temperature rise.
[0098] m si_eff ×c si ×ΔT / 2: The amount of heat absorbed by the equivalent mass of the heated silicon substrate;
[0099] Part Three: Continuous Heat Loss
[0100] G totalTotal thermal conductivity from the heat source to the isothermal heat sink (unit: watts / Kelvin, W / K); represents the overall heat dissipation capacity of the system, and its reciprocal is the total thermal resistance;
[0101] 1 / 2×G total ×ΔT: Average heat dissipation power over time t (unit: watts, W); its derivation assumes that heat dissipation power increases linearly with temperature difference;
[0102] 1 / 2×G total ×ΔT×t: The total heat lost through heat conduction during the entire heating time t.
[0103] In S105 of this embodiment, the value is compared with a known benchmark. Based on the result that the calculated fusing energy is much smaller than the reference parameter for polysilicon fuses, an estimated fusing energy value for the fuse is output, including:
[0104] The key parameters of the calculated metal simulated fuse melting energy were objectively compared and verified with recognized benchmark data. Specifically, a quantitative comparison was made with the typical parameter of 750 mA·ms of traditional polycrystalline silicon fuses, revealing significant differences in energy values.
[0105] To determine whether the fusing energy product of traditional polycrystalline silicon fuses (750 mA·ms) is 2-3 times that of metal-simulated fuses, and to empirically demonstrate whether metal-simulated fuses have the core advantages of lower energy demand and more sensitive response;
[0106] After completing the comparative verification and confirming its superiority, the estimated value of the fusing energy, which has been theoretically calculated and verified, is officially output. The estimated value of the fusing energy is directly applied to the detonation circuit design of the fuse module as a key design parameter, guiding the setting of a safe and reliable current amplitude and pulse width operating range.
[0107] This technical solution employs a staged temperature calculation method. By setting two target temperatures of 660℃ and 1200℃, the melting time and complete melting time are calculated respectively, thus fully simulating the physical process of the fuse from melting to complete melting. This not only accurately reflects the energy requirements of the actual melting process, but also, through comparison and verification with the benchmark parameters of traditional polycrystalline silicon fuses, proves that the metal simulated fuse has the advantages of lower energy consumption and faster response. This provides important technical support for the low-energy consumption and high-reliability design of the fuse module and significantly improves product performance.
[0108] Reference Figure 3-4As shown, a system for estimating the melting energy of a simulated fuse wire in a fuse module is used to execute the aforementioned melting energy estimation method. The melting energy estimation system includes: a model building module for establishing a three-dimensional thermal conduction model comprising a metal fuse layer, an insulating layer, and a substrate layer, and defining material parameters and isothermal boundary conditions; a parameter calculation module for calculating the effective heating area after area compensation, the series thermal conductance of each layer, and the equivalent heat capacity parameters of the system; an equation construction module for constructing an energy balance equation including the heat absorption of the aluminum fuse, the equivalent heat absorption of the silicon substrate, and the average heat dissipation loss; a time solution module for solving the melting time at different target temperatures in stages and obtaining reliable melting time parameters; and an energy output module for calculating the melting energy value and comparing it with a polycrystalline silicon benchmark before outputting the final estimation result. The multilayer thermal conduction physical model comprehensively considers the thermal conduction characteristics of the metal fuse layer, the insulating layer, and the semiconductor substrate layer. By quantitatively defining material parameters and isothermal boundary conditions, it achieves accurate characterization of the heat transfer path, significantly improving the accuracy and reliability of melting energy estimation, and providing a more reliable theoretical basis for fuse module design.
[0109] In this city's example, the parameter calculation module includes: an area compensation unit, used to accurately model the microscopic thermal field distribution by introducing compensation factors determined based on a large amount of experimental data or high-precision finite element analysis, reflecting the actual heat transfer paths in the horizontal and vertical directions; and a thermal conductivity calculation unit, used to apply the corrected effective area as a core parameter to multiple key calculation stages simultaneously, ensuring the internal consistency of the model, and also used to calculate the insulation layer G. ox Thermal conductivity of the substrate G si The heat capacity calculation unit is used to calculate the heat capacity C of the aluminum filament itself. al =m al ×c al The equivalent heat capacity of the silicon substrate is calculated by introducing the concept of equivalent heating volume; the data processing unit is used to treat the insulating layer and the semiconductor substrate as thermal resistances connected in series along the heat dissipation path, and calculates the thermal conductivity of each layer separately using the formula G = k·A / T, and then uses G total =(1 / G ox +1 / G si ) -1 The total thermal conductivity was obtained and used as a basic parameter to calculate the volume of the heated aluminum and the equivalent heated volume of the silicon substrate below it. A staged temperature solution method was adopted, and the melting time and complete melting time were calculated by setting two target temperatures of 660℃ and 1200℃ respectively. The physical process of the fuse from melting to complete melting was completely simulated. It not only accurately reflects the energy requirements of the actual melting process, but also proves that the metal simulated fuse has the advantages of lower energy consumption and faster response by comparing and verifying with the benchmark parameters of traditional polycrystalline silicon fuses.
[0110] This technical solution establishes an accurate multi-layer heat conduction physical model and uses area compensation factors and series thermal resistance calculation methods to solve the problem of insufficient accuracy in traditional fuse energy estimation caused by ignoring edge effects and three-dimensional thermal diffusion. It provides important technical support for the low-energy-consumption and high-reliability design of fuse modules and significantly improves product performance.
[0111] In this embodiment, the entire operation process can be controlled by a computer to provide signal feedback and implement the steps sequentially. These are all conventional knowledge in current automation control, and will not be elaborated on in this embodiment.
[0112] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention should be included within the protection scope of the present invention.
Claims
1. A method of estimating the fusing energy of a simulated fuze wire of a fuze module, characterized by, The application is applied to an electronic simulation device, and specifically includes the following steps: S101: based on the physical structure of the simulation fuse, a three-dimensional heat conduction physical model including a metal fuse layer, an insulating layer and a semiconductor substrate layer is established, the whole process of heat conduction from the metal fuse layer to the constant temperature heat sink through the silicon dioxide insulating layer and the silicon substrate layer in turn after the heat is generated from the metal fuse layer is accurately characterized, and quantitative definition is completed through specific material parameters and boundary conditions; S102: the effective heating area of the metal fuse is calculated, the initial value is obtained through the product of the length and the width, and the area compensation is carried out according to the process edge effect on this basis, secondly, the insulating layer and the semiconductor substrate are regarded as thermal resistances connected in series along the heat dissipation path, the thermal conductivities thereof are calculated respectively, and finally the heat capacity of the system is calculated; S103: the core energy balance differential equation for solving the fusing time and energy is constructed through the calculated data, the left side of the equation is the total electric energy input, the expression is P*t, wherein P is the heating power calculated according to the fuse resistance and the selected constant fusing current, and t is the fusing time; the right side of the equation includes three parts: the heat absorption of the aluminum fuse, the equivalent heat absorption of the silicon substrate and the average heat loss; S104: The melting time is estimated by solving the energy balance equation in stages. The target temperature is set as the melting point of aluminum, 660℃, at which point ΔT=640K. Substituting this into the equation P×t=Q, the melting time is estimated. material +1 / 2G total The melting time t1 is obtained by solving the equation ×ΔT×t. Then the target temperature is increased to 1200℃. At this time, ΔT=1180K represents the requirement for complete melting. The equation is solved again to obtain the final melting time t2. This value is the time parameter for reliable melting under constant current. S105: The calculated complete melting time t2 is combined with the heating power P2 at the melting time t2, and the final melting energy estimation value is calculated by the formula E fuse = P2 x t2. The result is that the calculated melting energy is much smaller than the known reference value of the polysilicon fuse, and the melting energy estimation value of the fuse is output.
2. A method of estimating the fusing energy of a simulated fuze in a fuze module as claimed in claim 1, wherein In S101, based on the physical structure of the simulation fuse, a three-dimensional heat conduction physical model including a metal fuse layer, an insulating layer and a semiconductor substrate layer is established, including: The material of the metal fuse layer is aluminum, the thickness is 0.91 μm, the insulating layer is silicon dioxide, the thickness is 1 μm and the thermal conductivity is 10 W / m·K, and the semiconductor substrate is silicon, the thickness is 0.25 mm and the thermal conductivity is 150 W / m·K; The lower surface of the semiconductor substrate is set as a constant temperature boundary condition, the temperature is constantly maintained at 20℃, which is used as the final heat sink of the whole heat dissipation path, and the whole process of heat conduction from the metal fuse layer to the constant temperature heat sink through the silicon dioxide insulating layer and the silicon substrate layer in turn after the heat is generated from the metal fuse layer is ensured, and the quantitative definition of specific material parameters and boundary conditions provides an accurate physical framework and boundary conditions for subsequent quantitative calculation.
3. A method of estimating the fusing energy of a simulated fuze in a fuze module as claimed in claim 2, wherein In S102, the effective heating area of the metal fuse is calculated, the initial value is obtained through the product of the length and the width, and the area compensation is carried out according to the process edge effect on this basis, including: The compensation factor determined based on a large amount of experimental data or high-precision finite element analysis is introduced to complete accurate modeling of the micro heat field distribution, which reflects the actual heat transfer path in the horizontal and vertical directions; The corrected effective area is synchronously applied to multiple key calculation links as a core parameter, ensuring the internal unity of the model, and is used to calculate the insulation layer G ox The thermal conductivity of the substrate G si and as a basic parameter to calculate the volume of the heated aluminum and the equivalent heated volume of the silicon substrate below.
4. A method of estimating the fusing energy of a simulated fuze in a fuze module as claimed in claim 3, wherein The insulating layer and the semiconductor substrate are regarded as thermal resistances connected in series along the heat dissipation path, the thermal conductivities thereof are calculated respectively, and finally the heat capacity of the system is calculated, including: After the heat generated from the metal fuse, it must pass through the SiO2insulation layer and Si substrate layer in turn to reach the constant temperature packaging substrate, which constitutes a typical thermal resistance series model. The heat conduction of each layer is calculated by the formula G = k-A / T, where k is the thermal conductivity of the material, A is the effective area, and T is the thickness of the layer. Then the total thermal conductance is obtained by G total =(1 / G ox +1 / G si ) -1 The heat capacity of the aluminum fuse itself is directly calculated from the product of its mass and specific heat capacity C al = m al · c al The silicon substrate is only partially heated significantly due to the thermal diffusion effect, and its equivalent heat capacity is calculated by introducing the concept of equivalent heating volume: area x equivalent diffusion depth to calculate its equivalent mass, and then combining the specific heat capacity of the material and considering the average value of the temperature gradient.
5. A method of estimating the fusing energy of a simulated fuze in a fuze module as defined in claim 4, wherein In S103, the right side of the equation includes three parts: the heat absorption of the aluminum fuse, the equivalent heat absorption of the silicon substrate and the average heat loss, including: The heat absorption of the aluminum fuse is the heat absorbed by the aluminum fuse material from the initial temperature to the target melting point temperature; The equivalent heat absorption of the silicon substrate is the heat absorbed by the equivalent mass of the silicon substrate heated in conjunction from the initial temperature to the average temperature; The average heat loss is the heat continuously dissipated through the series thermal conductors to the constant temperature heat sink in the whole heating time t, and since the heat dissipation power increases linearly with the temperature, the average value is taken.
6. A method of estimating the fusing energy of a simulated fuze in a fuze module as defined in claim 5, wherein The expression is Pxt, where P is the heating power calculated according to the fuse resistance and the selected constant fusing current, and t is the fusing time; the heat calculation on the right side of the equation includes three parts: the heat absorption of the aluminum fuse, the equivalent heat absorption of the silicon substrate, and the average heat loss, the expression is: Wherein, the first part: the heat absorption of the aluminum fuse: m al : mass of the aluminium fuse c al : specific heat capacity of aluminium, representing the heat absorbed by 1 kg of aluminium to raise its temperature by 1 Kelvin; ΔT: difference between the target temperature and the initial ambient temperature; m al × c al × ΔT: heat absorbed by the aluminium fuse to raise its temperature from the initial temperature to the target melting point temperature; The second part: the equivalent heat absorption of the silicon substrate: m si_eff : equivalent mass of the silicon substrate heated, the mass of the silicon actually heated at this time estimated from the heat diffusion depth;c si : specific heat capacity of silicon; ΔT / 2: average temperature rise of the silicon substrate;m si_eff × c si × 2ΔT: heat absorbed by the equivalent mass of the silicon substrate heated. The third part: the continuous heat loss: G total : total thermal conductance from heat source to constant temperature heat sink; 1 / 2 x G total : average heat dissipation power over time t; 1 / 2 x G total : total heat dissipated through thermal conduction to the outside over the entire heating time t.
7. The method for estimating the melting energy of a simulated fuse wire in a fuse module as described in claim 6, characterized in that, In S104, the target temperature is then raised to 1200 DEG C, at which time the complete fusing requirement is represented by a temperature difference of 1180K, and the equation is solved again to obtain the final fusing time t2, which is the reliable fusing time parameter under the constant current, including: The core energy balance differential equation established by different fusing targets is solved, the first target temperature is set as the melting point of aluminum 660 ℃, at this time ΔT = 640 K, the heating power P, the calculated heat conduction G total , the heat capacity parameter m al × c al , and m si-eff × c si , and the temperature difference ΔT = 640 K are substituted into the energy balance equation; Equation P x t = Q is obtained for time t material +1 / 2G total x ΔT x t, where Q material is the sum of the aluminum fuse endotherm and the equivalent endotherm of the silicon substrate, and the preliminary melting time t1 is obtained by solving the equation; Then, a second higher target temperature is set to simulate the energy required for complete fusing and generating a sufficient gap, the temperature difference ΔT is updated to 1180K, and the equation is solved again to obtain the time t2 required for complete fusing. The time t2 is the estimated fusing time required under the selected constant current.
8. A method of estimating the fusing energy of a simulated fuze in a fuze module as defined in claim 7, wherein In S105, the value is compared with the known reference, and the result that the calculated fusing energy is much smaller than the reference parameter of the polycrystalline silicon fuse is obtained by calculation, and the fusing energy estimation value of the fuse is output, including: The key parameters of the calculated metal simulation fuse fusing energy are objectively compared and verified with the recognized reference data, and the typical parameter 750mA·ms of the traditional polycrystalline silicon fuse is quantitatively compared, and the significant energy value difference is obtained; Determine whether the fusing energy product 750mA·ms of the traditional polycrystalline silicon fuse is 2-3 times that of the metal simulation fuse, and verify whether the metal simulation fuse has the core advantages of lower energy demand and faster response; After completing the comparison and verification and confirming its superiority, the theoretically calculated and verified fusing energy estimation value is formally output, which is directly applied to the initiation circuit design of the fuze module as a key design parameter to guide the setting of a safe and reliable current amplitude and pulse width working range.
9. A system for estimating the fusing energy of a simulated fuse filament in a fuse module, characterized in that, The fusing energy estimation system for performing the fusing energy estimation method of any one of claims 1-8, comprising: A model establishment module for establishing a three-dimensional heat conduction model including a metal fuse layer, an insulating layer and a substrate layer and defining material parameters and constant temperature boundary conditions; A parameter calculation module for calculating the effective heating area compensated by area, the series thermal conductivity of each layer and the system equivalent heat capacity parameter; An equation construction module for constructing an energy balance equation including the heat absorption of the aluminum fuse, the equivalent heat absorption of the silicon substrate and the average heat loss; A time solving module for solving the fusing time under different target temperatures in stages and obtaining the reliable fusing time parameter; An energy output module for calculating the fusing energy value and outputting the final estimation result after comparison with the polycrystalline silicon reference.
10. A system for estimating the fusing energy of a simulated fuze in a fuze module as recited in claim 9, wherein: The parameter calculation module includes: An area compensation unit for completing accurate modeling of the micro heat field distribution by introducing a compensation factor determined based on a large amount of experimental data or high-precision finite element analysis, which reflects the actual heat transfer path in the horizontal and vertical directions; a thermal conductance calculation unit for synchronously applying the corrected effective area as a core parameter to a plurality of key calculation links, ensuring the internal unity of the model, and for calculating the thermal conductance G ox of the substrate si ; a thermal capacity calculation unit for calculating the thermal capacity C of the aluminium fuses themselves al = m al x c al and the equivalent thermal capacity of the silicon substrate is calculated by introducing the concept of equivalent heating volume; A data processing unit is used to calculate the thermal conductance of each layer by the formula G = k-A / T, taking the insulating layer and the semiconductor substrate as thermal resistances in series along the heat dissipation path, and then the total thermal conductance is obtained by G total = (1 / G ox + 1 / G si ) -1 and is used as a basic parameter to calculate the volume of the heated aluminum and the equivalent heated volume of the silicon substrate below.