Physical adsorption-based atomic layer deposition method

Atomic layer deposition (ALD) based on physical adsorption, through cold field adsorption-hot gas purging cycle and temperature difference control, constructs a stable monomolecular physical adsorption layer on the substrate surface, solving the problem of substrate damage caused by ALD and achieving an atomically flat interface for high-k dielectric materials. This method is applicable to fields such as semiconductors, flexible electronics, and photoelectrocatalysis.

CN121272377BActive Publication Date: 2026-07-10SOUTHERN UNIVERSITY OF SCIENCE AND TECHNOLOGY
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Patent Information

Application Number
CN202511320758.8
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2025-09-15
Publication Date
2026-07-10
Estimated Expiration
2045-09-15

AI Technical Summary

Technical Problem

Existing atomic layer deposition technology is prone to structural damage to single-atom-layer van der Waals channel materials when depositing high-k gate dielectric materials, resulting in performance degradation and making it difficult to achieve large-scale integration.

Method used

A physical adsorption-based atomic layer deposition method is adopted. By selecting a first precursor with a binding energy of 1-25 kJ/mol to the substrate surface and performing a cold field adsorption-hot gas purging cycle, a stable monomolecular physical adsorption layer is constructed. Combined with low-temperature pre-deposition and high-temperature deposition, an atomically smooth interface is formed.

Benefits of technology

While maintaining the atomic-level manufacturing capability of atomic layer deposition, it reduces damage to the substrate surface and achieves an atomically flat interface between high-k dielectric materials and sensitive substrates, making it suitable for fields such as semiconductors, flexible electronics, photocatalysis, and lithium-ion batteries.

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Abstract

The application relates to the field of micro-nano processing technology, and particularly relates to an atomic layer deposition method based on physical adsorption, which comprises the following steps: providing a substrate; selecting a first precursor with a surface energy of 1-25 kJ / mol, and performing a first deposition cycle on the substrate to form a physical adsorption layer on the substrate surface; wherein each cycle of the first deposition cycle comprises the following steps: depositing the first precursor on the substrate surface with a first temperature, and blowing with inert gas with a second temperature, the first temperature being less than or equal to 25 DEG C, and the second temperature being greater than or equal to 30 DEG C; sequentially performing a second deposition cycle and a third deposition cycle on the physical adsorption layer with a second precursor and a reaction gas to form a functional material film on the substrate surface; wherein the environmental temperature of the second deposition cycle is less than 80 DEG C, and the environmental temperature of the third deposition cycle is greater than or equal to 80 DEG C. The application has the advantages of simplicity and universality, and can reduce the damage to the substrate surface under the premise of having an atomic-level manufacturing capability.
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Citation Information

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