N-type monocrystalline silicon antimony doping amount determination method, electronic equipment, system and program product

Abstract

The invention discloses a method for determining the antimony doping amount of N-type monocrystalline silicon, and the method carries out the following operations for the same coil obtaining the charging completion time of the last charging barrel of the current section, and recording the time as first time; in response to the fact that the coil base is subjected to first-time wire breakage and silicon materials are not added, the first-time wire breakage occurrence time is obtained and recorded as second time; and recording the time interval between the second time and the first time as a first time interval, and determining the first antimony doping amount according to the first time interval, the remaining amount in the crucible and the target resistivity in response to the fact that the first time interval is greater than a first preset time difference. The invention also provides corresponding electronic equipment, a system and a program product. According to the method, the antimony doping amount can be accurately determined.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing, and specifically to a method for determining the antimony doping content of N-type single crystal silicon, electronic equipment, systems, and program products. Background Technology

[0002] Currently, the industrial production of monocrystalline silicon mostly adopts the RCZ (Recharged Czocharlski) multiple crystal pulling technology. In the RCZ method, after each silicon ingot is pulled, the crucible is kept at a high temperature, and polycrystalline silicon particles are added to the remaining silicon molten material in the crucible through a feeding device to melt it for the next ingot pulling.

[0003] Currently, in the production of antimony-doped N-type monocrystalline silicon by various enterprises, the antimony doping amount corresponding to the addition of silicon material during the RCZ Czochralski method is easy to calculate. However, there are difficulties and inconsistent standards in calculating and implementing antimony replenishment when the silicon rod breaks during the furnace pull operation (referring to the breakage that occurs after the equal diameter step of the monocrystalline silicon rod, and the pulling operation continues directly without adding silicon material). Usually, the calculation is performed by manually reporting the pulling status of the furnace, such as the number of lead-in or shoulder-out steps. This traditional method has the following four problems:

[0004] (1) Due to the large production capacity in industrial production, the demand for antimony replenishment is high. If the personnel are not skilled, they may make mistakes in manually reporting the crystal pulling status of the furnace and in calculating the amount of antimony replenishment, which may lead to abnormal resistivity accidents in single crystal rods and cause economic losses.

[0005] (2) When the furnace platform was disconnected and no material was added, antimony was not added, resulting in abnormally high resistivity.

[0006] (3) The calculation standards for antimony doping during regular feeding and antimony doping during disconnection and no feeding are different. Usually, 2 to 3 employees are needed to perform this operation, which results in low work efficiency and high labor costs for enterprises.

[0007] (4) Determining the amount of antimony to be added based on the number of releases is not accurate enough, as the time may deviate by several hours each time. Summary of the Invention

[0008] This invention provides a method for determining the antimony doping content of N-type monocrystalline silicon, enabling accurate calculation of the antimony doping level when a production line break occurs and no silicon material is added during the production of antimony-doped N-type monocrystalline silicon. This invention also provides corresponding electronic equipment, a system for determining the antimony doping content of N-type monocrystalline silicon, and a software product.

[0009] This invention provides the following technical solution: a method for determining the antimony doping content of N-type single crystal silicon, wherein the following operations are performed for the same furnace:

[0010] Get the time when the last bucket of material in the current segment is fed, and record this time as the first time.

[0011] In response to the furnace platform experiencing its first wire breakage in the current segment without adding silicon material, the time of the first wire breakage is obtained and recorded as the second time.

[0012] The time interval between the second time and the first time is denoted as the first time interval. In response to the first time interval being greater than a first preset time difference, the first antimony doping amount is determined based on the first time interval, the amount of material remaining in the crucible, and the target resistivity, including:

[0013] Calculate the simulated resistivity based on the first time interval and the target resistivity;

[0014] The first logarithm is obtained by taking the logarithm of the simulated resistivity to the base 10, and the second logarithm is obtained by taking the logarithm of the target resistivity to the base 10.

[0015] Map the first logarithm to the first dimensionless parameter, and map the second logarithm to the second dimensionless parameter;

[0016] The simulated antimony concentration is determined based on the first dimensionless parameter, and the target antimony concentration is determined based on the second dimensionless parameter.

[0017] The first amount of antimony to be added is determined based on the difference between the target antimony concentration and the simulated antimony concentration, as well as the amount of residual material in the crucible, so that production personnel can perform the first antimony addition based on the first amount of antimony to be added.

[0018] In some implementations, the first preset time difference is an empirical value, representing the time interval corresponding to the increase in resistivity of a single-crystal silicon rod to the upper limit threshold of resistivity.

[0019] In some implementations, furnace platform information is obtained simultaneously with the time when the last bucket of material is added and the time when the first line break occurs.

[0020] In some implementations, the simulated resistivity is calculated according to the following formula: Simulated resistivity = Target resistivity + (First time interval + Preset time margin) * First empirical constant, where the first empirical constant represents the amount of resistivity evaporation per unit time.

[0021] In some implementations, the mapping of the first logarithm to a first dimensionless parameter and the mapping of the second logarithm to a second dimensionless parameter are calculated according to the following formula:

[0022] Z1=(A0+A1*X1+A2*X1^2+A3*X1^3) / (1+B1*X1+B2*X1^2+B3*X1^3);

[0023] Z2=(A0+A1*X2+A2*X2^2+A3*X2^3) / (1+B1*X2+B2*X2^2+B3*X2^3);

[0024] Z1 is the first dimensionless parameter, X1 is the first logarithm, Z2 is the second dimensionless parameter, X2 is the second logarithm, and A0, A1, A2, A3, B1, B2, and B3 are preset dimensionless constants.

[0025] In some embodiments, the method further includes:

[0026] The time when the first antimony doping was completed in the current segment is recorded as the third time.

[0027] In response to a second circuit break in the current section of the furnace without adding silicon material, the time of the second circuit break is obtained and recorded as the fourth time.

[0028] The time interval between the fourth time and the third time is recorded as the second time interval. In response to the second time interval being greater than the second preset time difference, the second antimony doping amount is determined according to the following formula: second antimony doping amount = first antimony doping amount + preset antimony doping margin. This allows production personnel to perform a second antimony doping based on the second antimony doping amount. The preset antimony doping margin indicates that the resistivity of the monocrystalline silicon after the second antimony doping meets the expected empirical value.

[0029] In some implementations, the second preset time difference is an empirical value, representing the time interval corresponding to the increase in resistivity of a single-crystal silicon rod to the upper limit threshold of resistivity.

[0030] The present invention provides the following technical solution: an electronic device, including a memory and a processor, wherein the memory stores a program and the processor runs the program to perform the above-described method.

[0031] The present invention provides the following technical solution: a system for determining the antimony doping content of N-type single crystal silicon, including the above-mentioned electronic equipment, and also including a handheld terminal, wherein the handheld terminal is used to determine furnace information and the first time and the second time.

[0032] In some implementations, the handheld terminal is also used to determine furnace information, as well as the third time and the fourth time.

[0033] The present invention provides the following technical solution: a program product, characterized in that the program product executes the above-described method when running on a processor.

[0034] Using the above method, on the one hand, the amount of antimony doping can be accurately calculated to ensure that the resistivity of the N-type single crystal silicon rod produced after the wire breakage is the expected value; on the other hand, the method sets a certain margin to ensure that the production process is safe and controllable. Attached Figure Description

[0035] Figure 1 This is a flowchart illustrating the method for determining the antimony doping content of N-type single-crystal silicon according to the present invention.

[0036] Figure 2 This is a structural block diagram of the electronic device of the present invention.

[0037] Figure 3 This is a structural block diagram of the N-type single-crystal silicon antimony doping determination system of the present invention. Detailed Implementation

[0038] The present invention will be further described below with reference to specific embodiments, but the scope of protection of the present invention is not limited thereto.

[0039] The method for determining the antimony doping content of N-type single crystal silicon according to the present invention is applicable to the production of single crystal silicon using the RCZ Czochralski method. A typical process flow is as follows.

[0040] initial stage

[0041] Furnace assembly: Operators must wear clean work clothes and shoes, place the quartz crucible containing high-purity polycrystalline silicon material and dopants (which determine whether P-type or N-type silicon wafers are obtained) into the single crystal furnace, and close the furnace chamber and furnace door.

[0042] Evacuation: After the furnace is closed, a vacuum pump evacuates the interior of the furnace to provide a clean environment for single crystal growth. This step requires evacuating to a certain pressure, then filling with high-purity argon gas, then closing the furnace chamber, evacuating again, and filling with argon gas again, repeating this process several times to remove impurities from the furnace.

[0043] Leak detection: After evacuating to a certain pressure (e.g., below 3 Pa), a leak test is required to check the airtightness of the furnace body. This is crucial to ensuring the stable operation of subsequent processes.

[0044] Pressure testing: After leak detection, the argon valve is opened, and argon gas is introduced. The pressure inside the furnace is gradually increased to the crystal growth pressure range. The role of argon gas (as a protective gas) is to prevent oxidation of single-crystal silicon and control silicon volatilization.

[0045] Melting: The heater begins heating the silicon material to a temperature above the melting point of silicon (over 1420°C), completely melting the polycrystalline silicon and dopants. After melting, the molten silicon is stabilized to a suitable seeding temperature.

[0046] Single crystal growth core stage

[0047] This phase runs in a loop, and the following explanation uses the first loop as an example.

[0048] Welding: After the melt temperature stabilizes within the seeding range, the seed crystal is lowered close to the melt surface. Once the solid seed crystal contacts the melt surface, its tip melts. This step aims to preheat and fuse the seed crystal with the melt, preparing it for single crystal growth.

[0049] Necking: When a seed crystal comes into contact with molten silicon, the thermal stress generated by the temperature difference can induce dislocations. The method to eliminate these dislocations is necking, which involves gradually reducing the diameter of the seed crystal during the pulling process to squeeze out the dislocations. The length of the neck is approximately the diameter of the crystal rod. The purpose of this step is to eliminate dislocations generated during solid-liquid contact, laying the foundation for dislocation-free single crystal growth.

[0050] Shouldering: After the crystal is pulled to the target length, the crystal pulling speed is slowed down and the temperature is lowered, causing the crystal rod diameter to increase rapidly. This process is called shouldering. During this stage, the crystal diameter will increase to the required size.

[0051] Shoulder Turning: After the shoulder reaches the target diameter, the crystal growth direction needs to be quickly changed from horizontal to vertical. Increase the pulling speed until the crystal stops growing horizontally and the diameter no longer increases; this completes the shoulder turning.

[0052] Constant Diameter: After the shoulder is turned to the target diameter, the crystal enters the constant diameter growth stage. This stage mainly achieves stable diameter control by controlling the pulling speed of the crystal rod and the temperature of the melt in the furnace, and is the main part of the growth process of the single crystal silicon rod.

[0053] Tailing Off: After the constant diameter is achieved, if the crystal detaches directly from the liquid surface, a large number of dislocations will be generated at the interface. Therefore, it is necessary to gradually reduce the diameter of the crystal rod to the minimum before detaching it from the liquid surface; this is called tailing off. The purpose of tailing off is mainly to reduce the number of dislocations generated when the crystal detaches from the liquid surface by reducing thermal shock.

[0054] Segment finishing: After the first equal-diameter finishing, the grown single crystal silicon rod is lifted out of the liquid and cooled.

[0055] The refillable feeding cylinder is a key feature of the multiple-feed technology. It replenishes the crucible with new polycrystalline silicon material via a feeding mechanism, preparing it for the next crystal pulling operation. This allows for the continuous production of multiple single crystal rods in the same batch, significantly improving production efficiency and reducing production costs.

[0056] Completed and shut down

[0057] After all cycles are completed, the furnace is shut down. The crystal rod is raised into the auxiliary chamber for cooling. Heating is stopped, the crucible is raised to the highest position for cooling, and after 2-3 hours, the furnace is disassembled, the rod is removed, and the furnace body is cleaned. Subsequently, the produced single crystal rods are tested for various parameters and recorded.

[0058] In a normal production process, the process from adding silicon material and dopants to the final removal of the segment is considered a "segment".

[0059] Technicians pre-maintain furnace information in the MES system. This information includes: organization, specifications, furnace type, crucible model, cycle completion, and experiment type. The accurate furnace is located based on these six dimensions. The meanings of each parameter are as follows.

[0060] Organization: The numbering of each production workshop, including Production Workshop 1, Production Workshop 2, Production Workshop 3, etc.

[0061] Specifications: The code of the products produced. For example, production workshop 1 produces monocrystalline silicon rods of one specification, while production workshop 2 produces monocrystalline silicon rods of another specification.

[0062] Furnace type: The production workshop corresponds to the type of each single crystal furnace, generally there are normal material furnaces and controlled material furnaces (distinguished according to the different silicon materials used).

[0063] Crucible Models: The inner diameter of the crucibles used in the production workshop varies for each single crystal furnace, such as 32-inch, 33-inch, 34-inch, 36-inch, and 40-inch.

[0064] Cycle completion: refers to the current production status of the single crystal furnaces in each production workshop. Cycle means continuing to add silicon material to pull single crystal silicon rods, and completion means stopping the addition of silicon material and shutting down the furnace to terminate production.

[0065] Experiment type: refers to whether there are experiments on crucibles or silicon materials conducted by technicians in the single crystal furnace of the production workshop, which is different from normal batch industrial production.

[0066] The above is merely an exemplary example illustrating how to precisely locate a stovetop.

[0067] refer to Figure 1 In the method for determining the antimony doping content of N-type single crystal silicon, the following operations are performed for the same furnace:

[0068] S1. Obtain the time when the last bucket of material in the current segment is completed, and record this time as the first time. That is, determine the accurate time when the material feeding is completed.

[0069] Specifically, when adding silicon material to each section, after the last bucket is added, the production personnel in the furnace area must use the barcode scanner built into their handheld terminal (such as a personal digital assistant PDA) to scan the QR code on the paper label pasted on the last bucket within 5 minutes after clicking "Remove Bucket" on the control panel. The information contained in the QR code is the furnace information, and the handheld terminal simultaneously captures the scanning time as the first time.

[0070] S2. In response to the furnace experiencing its first disconnection in the current segment without adding silicon material, obtain the time of the first disconnection, which is recorded as the second time.

[0071] Wire breakage includes three situations: welding interruption, crystal pulling interruption, and equal diameter interruption. Production personnel then use their barcode scanners again to scan the QR code on the paper label affixed to the last batch of material, capturing and identifying furnace information and the second time.

[0072] S3. The time interval between the second time and the first time is recorded as the first time interval. In response to the first time interval being greater than the first preset time difference, the first antimony doping amount is determined based on the first time interval, the amount of remaining material in the crucible, and the target resistivity.

[0073] The calculated initial doping amount is sent to the production staff's personal digital assistant (PDA) so that the production staff can weigh the corresponding amount of antimony.

[0074] Specifically, the first antimony doping amount is determined based on the first time interval, the amount of material remaining in the crucible, and the target resistivity, including the following steps.

[0075] S31. Calculate the simulated resistivity based on the first time interval and the target resistivity.

[0076] In some implementations, the simulated resistivity is calculated according to the following formula: Simulated resistivity = Target resistivity + (First time interval + Preset time margin) * First empirical constant, where the first empirical constant represents the amount of resistivity evaporation per unit time.

[0077] The simulated resistivity characterizes the expected resistivity of a single-crystal silicon rod without antimony doping, assuming the wire is disconnected. To ensure that the resistivity of the antimony-doped single-crystal silicon rod pulled is appropriately lower than the target resistivity, a preset time margin is used to appropriately increase the simulated resistivity, which in turn will appropriately increase the amount of antimony doping subsequently.

[0078] In a production instance, the preset time margin is 4 hours, but it can also be other appropriate values ​​such as 3 hours, 5 hours, 2 hours, etc.

[0079] The first empirical constant is an approximation. In a production instance, the first empirical constant is taken as 0.01 Ω·cm / h. This value is estimated based on the following production data.

[0080] time resistivity of single crystal silicon rod 1h 1.05 2h 1.06 3h 1.07 4h 1.09

[0081] The "Time" field in this table refers to the current production time, which is the time counted from the moment the last barrel of the current production cycle is removed. The resistivity of the monocrystalline silicon rod refers to the resistivity of the monocrystalline silicon rod produced at the corresponding time point.

[0082] S32. Take the logarithm of the simulated resistivity to the base 10 to obtain the first logarithm, and take the logarithm of the target resistivity to the base 10 to obtain the second logarithm.

[0083] S33. Map the first logarithm to the first dimensionless parameter, and map the second logarithm to the second dimensionless parameter.

[0084] In some implementations, the mapping of the first logarithm to a first dimensionless parameter and the mapping of the second logarithm to a second dimensionless parameter are calculated according to the following formula:

[0085] Z1=(A0+A1*X1+A2*X1^2+A3*X1^3) / (1+B1*X1+B2*X1^2+B3*X1^3);

[0086] Z2=(A0+A1*X2+A2*X2^2+A3*X2^3) / (1+B1*X2+B2*X2^2+B3*X2^3);

[0087] Z1 is the first dimensionless parameter, X1 is the first logarithm, Z2 is the second dimensionless parameter, X2 is the second logarithm, and A0, A1, A2, A3, B1, B2, and B3 are preset dimensionless constants. A0, A1, A2, A3, B1, B2, and B3 are coefficients obtained through experimental and theoretical fitting. They are theoretical parameters determined to ensure that the formula can accurately describe the "resistivity-doping concentration" relationship and have no physical units.

[0088] In a production instance, A0 = -3.1083, A1 = -3.2626, A2 = -1.2196, A3 = -0.13923, B1 = 1.0265, B2 = 0.38755, and B3 = 0.041833.

[0089] S34. Determine the simulated antimony concentration based on the first dimensionless parameter, and determine the target antimony concentration based on the second dimensionless parameter.

[0090] Specifically, the simulated antimony concentration N1 = (6.242 * 10^18 / simulated resistance) * 10^Z1;

[0091] The target antimony concentration N2 is equal to (6.242 * 10^18 / target resistance) * 10^Z2.

[0092] The physical meanings of N1 and N2: They represent the concentration of antimony dopant in a silicon single crystal, that is, the number of antimony doped atoms per unit volume of silicon single crystal, in cm³. -3 (per cubic centimeter). The units for both simulated and target resistance are Ω. The constant 6.242 * 10^18 in the formula is an empirical value.

[0093] S35. Determine the first amount of antimony to be added based on the difference between the target antimony concentration and the simulated antimony concentration and the amount of residual material in the crucible, so that production personnel can perform the first antimony addition based on the first amount of antimony to be added.

[0094] Specifically, the initial antimony replenishment weight M1 for the current segment is calculated as follows: M1 = (Target antimony concentration - Simulated antimony concentration) / 0.023 * Residual material in the crucible / 2.33 * 121.76 / (6.023E+23) * 1000. The residual material in the crucible is in kg, and the constants 0.023, 2.33, 121.76, 6.023E+23, and 1000 in the formula are empirical values.

[0095] In some implementations, the first preset time difference is an empirical value, representing the time interval corresponding to the increase in resistivity of a single-crystal silicon rod to the upper limit threshold of resistivity.

[0096] In a specific production example, the initial preset time difference was 8 hours. During each stage of silicon material addition in the furnace area, the time between the "material barrel removal" step after the last bucket was added and the "welding interruption, crystal pulling interruption, and equal diameter interruption" step typically took 4-5 hours in actual production. According to actual testing, after 5 hours, antimony volatilization increased significantly with time, and resistivity also continuously rose. Especially after 8 hours, the resistance directly exceeded the product's control requirements, rendering the produced monocrystalline silicon unusable and negatively impacting production. The following are the test data for different time intervals:

[0097]

[0098] In some implementations, furnace platform information is obtained simultaneously with the time when the last bucket of material is added and the time when the first line break occurs.

[0099] In some embodiments, the method further includes:

[0100] S4. Obtain the completion time of the first antimony doping in the current segment, and record it as the third time.

[0101] After adding antimony into the furnace, production personnel use a PDA barcode scanner to scan the QR code on the label of the last feeding cylinder in the current section, capturing and identifying furnace information and the third time. Antimony can be added into the furnace via a dopant or a feeding cylinder.

[0102] S5. In response to the furnace platform experiencing a second disconnection in the current segment without adding silicon material, obtain the time of the second disconnection, which is recorded as the fourth time.

[0103] If a second disconnection occurs in the current furnace section and no material is to be added to the next section, the production staff will use their PDA barcode scanner again to scan the QR code on the label of the last material cylinder, capturing and identifying the furnace platform information and the current time (as the fourth time). The PDA will then transmit the furnace platform information, the fourth time, and the third time back to the MES system.

[0104] S6. The time interval between the fourth time and the third time is recorded as the second time interval. In response to the second time interval being greater than the second preset time difference, the second antimony doping amount is determined according to the following formula: second antimony doping amount = first antimony doping amount + preset antimony doping margin, so that production personnel can perform the second antimony doping based on the second antimony doping amount. The preset antimony doping margin indicates that the resistivity of the monocrystalline silicon after the second antimony doping meets the expected empirical value.

[0105] In one production instance, after receiving the data from the PDA, the MES system calculates the second time interval by subtracting the fourth time from the third time. If the second time interval exceeds 5 hours, the MES automatically generates a "replenishment order" and calculates the weight M2 of the second antimony replenishment for the current period. At the same time, the replenishment order information is pushed to the production personnel's PDA. The production personnel see the message prompt and know that this furnace needs to be replenished with antimony and the amount of antimony to be added.

[0106] In one production example, the second antimony addition amount M2 = M1 + 0.2, where 0.2 is the preset antimony addition margin in g; M1 and M2 are both in g.

[0107] The following shows the source of the preset antimony doping margin of 0.2g in this production example: it is obtained from experimental data, based on whether the resistance of the single crystal silicon rod produced with different antimony doping weights in the second batch meets the target requirements.

[0108]

[0109]

[0110] The test results show that when M2 is equal to M1+0.2, the resistance of the single crystal silicon reaches 1.48 Ω·cm, which is below the upper limit standard of resistivity control of 1.50 Ω·cm. Its function is to ensure that the resistance of the produced crystal rod can meet the target requirement value and that no abnormality of exceeding the limit occurs.

[0111] Since the probability of two wire breaks occurring in the same production segment is extremely low, the calculation process for the second antimony doping amount is relatively simple and can save time. Setting a preset antimony doping margin can ensure that the resistivity of the pulled monocrystalline silicon meets the specified requirements.

[0112] It should be noted that although the above method for calculating the first antimony doping amount runs on electronic equipment, the relevant parameters still need to be confirmed on-site by personnel, which actually consumes a certain amount of time. However, compared with existing technologies, the calculation of the first antimony doping amount is more accurate, and the time consumption is still reduced.

[0113] In some implementations, the second preset time difference is an empirical value, representing the time interval corresponding to the increase in resistivity of a single-crystal silicon rod to the upper limit threshold of resistivity.

[0114] The 5h in the above production example is an example of the second preset time difference. It is an empirical value derived from the following production data.

[0115]

[0116] If the second time interval is greater than 5 hours, the resistivity of the pulled monocrystalline silicon will be higher than the upper limit standard of resistivity control, and antimony doping is required.

[0117] It should be noted that when a wire break occurs and silicon material is added, antimony doping is also required. This invention does not limit the calculation of the antimony doping amount in this case, and it can be determined according to existing methods.

[0118] Based on the same inventive concept, and referring to Figure 2 Embodiments of the present invention also provide an electronic device, including a memory and a processor, wherein the memory stores a program, and the processor runs the program to perform the above-described method. In a typical application scenario, the electronic device is an electronic device running a Manufacturing Execution System (MES system), and the program may be a subroutine of the MES system.

[0119] Based on the same inventive concept, and referring to Figure 3 The embodiments of the present invention also provide a system for determining the antimony doping content of N-type single crystal silicon, including the above-mentioned electronic equipment, and further including a handheld terminal, wherein the handheld terminal is used to determine furnace information and the first time and the second time.

[0120] In some implementations, the handheld terminal is also used to determine furnace information, as well as the third time and the fourth time.

[0121] Based on the same inventive concept, embodiments of the present invention also provide a program product that executes the above-described method when running on a processor.

[0122] The processors described above are, for example, central processing units (CPUs), graphics processing units (GPUs), application-specific integrated circuits (ASICs), or combinations thereof. A processor may include, but is not limited to, one or more processors or microprocessors. Each processor may be implemented using an application-specific integrated circuit (ASIC), a digital signal processor (DSP), a digital signal processing device (DSPD), a programmable logic device (PLD), a field-programmable gate array (FPGA), a controller, a microcontroller, a microprocessor (MCU), a CPU, a GPU, or other electronic components to perform the methods described in the above embodiments.

[0123] The above-mentioned storage devices can be USB flash drives, fixed hard drives, portable hard drives, read-only memory (ROM), random access memory (RAM), flash memory, EPROM memory, EEPROM memory, registers, magnetic disks or optical disks, and other media that can store program code.

[0124] Electronic devices should also include buses, communication components, human-computer interaction components, etc., but the present invention does not limit them.

[0125] This invention is not limited to the above-described embodiments. Any modifications, improvements, or substitutions that can be conceived by those skilled in the art without departing from the essential content of this invention fall within the scope of this invention.

Claims

1. A method of determining the amount of antimony doping in an N-type monocrystalline silicon, characterized by, The following operations are performed on the same furnace: Obtain the last bucket of the current segment, and record the time as the first time; In response to the first line break occurring in the current segment without adding silicon material, obtain the time when the first line break occurs, and record the time as the second time; The time interval between the second time and the first time is recorded as the first time interval, and in response to the first time interval being greater than the first preset time difference, the first antimony doping amount is determined according to the first time interval, the remaining material amount in the crucible, and the target resistivity, including: Calculate the simulated resistivity according to the first time interval and the target resistivity; Take the logarithm of the simulated resistivity to the base of 10 to obtain the first logarithm, and take the logarithm of the target resistivity to the base of 10 to obtain the second logarithm; Map the first logarithm to the first dimensionless parameter, and map the second logarithm to the second dimensionless parameter; Determine the simulated antimony concentration according to the first dimensionless parameter, and determine the target antimony concentration according to the second dimensionless parameter; Determine the first antimony supplement doping amount according to the difference between the target antimony concentration and the simulated antimony concentration and the remaining material amount in the crucible, so that the production personnel perform the first antimony supplement doping according to the first antimony supplement doping amount.

2. The method of claim 1, wherein, The first preset time difference is an empirical value representing the time interval corresponding to the increase of the single crystal silicon rod resistivity to the upper limit threshold of the resistivity.

3. The method of claim 1, wherein, Obtain the last bucket of the current segment, and record the time as the first time; 4. The method of claim 1, wherein, The simulated resistivity is calculated according to the following formula: simulated resistivity = target resistivity + (first time interval + preset time margin) * first empirical constant, and the first empirical constant represents the resistivity evaporation amount per unit time.

5. The method of claim 1, wherein, The first logarithm is mapped to the first dimensionless parameter, and the second logarithm is mapped to the second dimensionless parameter according to the following formula: Z1 = (A0 + A1 * X1 + A2 * X1^2 + A3 * X1^3) / (1 + B1 * X1 + B2 * X1^2 + B3 * X1^3); Z2 = (A0 + A1 * X2 + A2 * X2^2 + A3 * X2^3) / (1 + B1 * X2 + B2 * X2^2 + B3 * X2^3); Z1 is the first dimensionless parameter, X1 is the first logarithm, Z2 is the second dimensionless parameter, X2 is the second logarithm, A0, A1, A2, A3, B1, B2, B3 are preset dimensionless constants.

6. The method of claim 1, wherein, The method further comprises: Obtain the first time of the current segment, and record the time as the third time; In response to the second line break occurring in the current segment without adding silicon material, obtain the time when the second line break occurs, and record the time as the fourth time; The time interval between the fourth time and the third time is recorded as the second time interval, and in response to the second time interval being greater than the second preset time difference, the second antimony supplement doping amount is determined according to the following formula: second antimony supplement doping amount = first antimony supplement doping amount + preset antimony doping margin, so that the production personnel perform the second antimony supplement doping according to the second antimony supplement doping amount, and the preset antimony doping margin is an empirical value representing the single crystal silicon resistivity meeting the expected requirements after the second antimony supplement doping.

7. The method of claim 6, wherein, The second preset time difference is an empirical value representing the time interval corresponding to the increase of the single crystal silicon rod resistivity to the upper limit threshold of the resistivity.

8. An electronic device, comprising: comprising a memory storing a program and a processor running the program to perform the method according to any one of claims 1 to 7.

9. A system for determining the amount of antimony doping in N-type monocrystalline silicon, comprising: The electronic device according to claim 8, further comprising a handheld terminal for determining hearth information and the first time and the second time.

10. A program product, characterized by The program product performs the method according to any one of claims 1 to 7 when running on a processor.

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