Method for manufacturing aero-engine semiconductor electric nozzle and semiconductor electric nozzle

Abstract

The application discloses an aero-engine semiconductor electric nozzle manufacturing method and the semiconductor electric nozzle. The method comprises the following steps: preparing an electric nozzle shell, the electric nozzle shell comprises a cylinder with an open end and a closed end, an electrode column is arranged in the center of the cylinder, the electrode column is connected with the bottom of the cylinder, and an annular cavity is formed between the cylinder and the electrode column; silicon carbide ceramic powder is filled in the annular cavity and compacted to obtain a preform; the preform is placed in a hot isostatic pressing furnace for hot isostatic pressing treatment, so that the silicon carbide ceramic powder is solidified, and a semiconductor electric nozzle semi-finished product is obtained; and the semiconductor electric nozzle semi-finished product is processed, and a firing port is formed on the closed end of the cylinder. The electrode is preformed in the electric nozzle shell, and an annular cavity for forming a semiconductor porcelain tube is reserved, cold isostatic pressing forming and hot isostatic pressing treatment are adopted, after the semiconductor porcelain tube is formed, the end of the electric nozzle shell is processed, and the electrode and the semiconductor porcelain tube are integrally formed, the processing method is simple, the electric nozzle has good air tightness, and the problems of small size and high manufacturing cost of the electric nozzle are solved.

Description

Technical Field

[0001] This invention belongs to the field of engine electrical nozzle technology, specifically relating to a method for manufacturing a semiconductor electrical nozzle for an aero-engine and the semiconductor electrical nozzle itself. Background Technology

[0002] The ignition nozzle is one of the key components of the aircraft engine ignition system. Its function is to convert the high-voltage electrical pulse generated by the ignition device into an electric spark to ignite the combustible fuel-air mixture in the engine combustion chamber.

[0003] Currently, semiconductor nozzles can be divided into two types: semiconductor glaze and semiconductor block. Semiconductor glaze nozzles suffer from poor adhesion, making them prone to detachment due to vibration, temperature shock, and other environmental factors in the complex operating environment of aero engines. This can lead to nozzle malfunctions such as failure to ignite or low ignition frequency. Semiconductor block nozzles improve upon the glaze detachment problem, but because their internal insulation components are Al2O3 ceramic tubes (generally A-95 ceramic), limitations in ceramic sintering and processing capabilities, along with the need to maintain insulation distance, necessitate an internal insulation structure with overlapping ceramic tubes. Figure 1 As shown; however, when this structure is used in small electric nozzles, the thickness of the ceramic tube is small, and it is prone to fatigue fracture or performance degradation under high-frequency vibration.

[0004] Semiconductor nozzles are installed on the combustion chamber casing of aircraft engines, with one end inside the combustion chamber and the other end outside the casing. The nozzles need to be airtight to prevent leakage of high-pressure, high-temperature gases from the combustion chamber. Therefore, the internal structure of the nozzle requires a complex design to seal the ceramic tube to the nozzle housing and to the central conductor metal. This structure typically requires multiple welding processes, resulting in low processing efficiency and a low yield rate. Summary of the Invention

[0005] The purpose of this invention is to provide a method for manufacturing a semiconductor electrical nozzle for an aero-engine and a semiconductor electrical nozzle, so as to solve the problems of complex structure, complex sealing process, difficulty in miniaturization and high manufacturing cost of existing semiconductor electrical nozzles.

[0006] This invention is achieved through the following technical solution:

[0007] A method for manufacturing semiconductor electrical nozzles for aero-engines includes the following steps:

[0008] An electric nozzle housing is prepared, the electric nozzle housing includes a cylindrical body with one end open and the other end closed, an electrode post is arranged at the center of the cylindrical body, the electrode post is connected to the bottom of the cylindrical body, and an annular cavity is formed between the cylindrical body and the electrode post;

[0009] Silicon carbide ceramic powder is filled into the annular cavity and compacted to obtain a preform;

[0010] The preform is placed in a hot isostatic pressing furnace for hot isostatic pressing treatment to solidify the silicon carbide ceramic powder and obtain a semiconductor electric nozzle semi-finished product.

[0011] Semiconductor electric nozzle semi-finished products are processed, and the firing port is formed at the closed end of the cylinder.

[0012] In some embodiments of the present invention, the process steps for hot isostatic pressing of the preform are as follows: under a preset pressure, the preform is heated from room temperature to 1750°C, then cooled to 1400°C, and then naturally cooled from 1400°C to room temperature.

[0013] In some embodiments of the present invention, the process steps for hot isostatic pressing of the preform are as follows:

[0014] Heating from room temperature to 200°C for 120 minutes;

[0015] Heating from 200℃ to 1200℃ for 120 minutes;

[0016] Heating from 1200℃ to 1650℃ for 180 minutes;

[0017] Heating from 1650℃ to 1750℃ for 240 minutes;

[0018] The temperature was lowered from 1750℃ to 1400℃ in 60 minutes.

[0019] Allow it to cool naturally from 1400℃ to room temperature.

[0020] In some embodiments of the present invention, the preset pressure is 20-30 MPa.

[0021] In some embodiments of the present invention, cold isostatic pressing is used to compact the silicon carbide ceramic powder filling the annular cavity.

[0022] In some embodiments of the present invention, the process steps of the cold isostatic pressing are as follows: the electrode housing filled with silicon carbide ceramic powder is installed in the covering sleeve, pressurized to 100-300 MPa in the cold isostatic pressing equipment, and held for 2-3 hours; then the pressure is released, and during the pressure release, the pressure is released in increments of 50-60 MPa, and the pressure is held for 10-20 minutes at each pressure release step until the pressure is completely released.

[0023] In some embodiments of the present invention, the electric nozzle housing is integrally machined.

[0024] In some embodiments of the present invention, the electrical nozzle housing is made of Mo-30W tungsten-molybdenum alloy.

[0025] In some embodiments of the present invention, the silicon carbide ceramic powder is SiC-Al2O3.

[0026] On the other hand, the present invention also provides a semiconductor electrical nozzle prepared using the aforementioned method for manufacturing semiconductor electrical nozzles for aero-engines.

[0027] Compared with the prior art, the present invention has the following advantages and beneficial effects:

[0028] This invention designs the structure of the electric nozzle housing, pre-forming electrodes and reserving annular cavities for forming semiconductor ceramic tubes within the housing. It employs cold isostatic pressing and hot isostatic pressing to form the semiconductor ceramic tube. After forming the semiconductor ceramic tube, the ends of the electric nozzle housing are processed to integrally form the electrodes and semiconductor ceramic tube. This processing method is simple and has excellent airtightness, effectively solving the problems of miniaturization and high manufacturing costs associated with electric nozzles. Attached Figure Description

[0029] To more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings in the embodiments will be briefly described below. It should be understood that the following drawings only show some embodiments of the present invention and should not be regarded as a limitation on the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0030] Figure 1 This is a schematic diagram of an existing electric nozzle structure that uses a semiconductor block.

[0031] Figure 2 This is a schematic diagram of the electric nozzle housing structure in an embodiment of the present invention.

[0032] Figure 3 This is a schematic diagram of the semiconductor electric nozzle semi-finished product structure in an embodiment of the present invention.

[0033] Figure 4 This is a schematic diagram of the semiconductor electric nozzle structure prepared in an embodiment of the present invention.

[0034] in:

[0035] 10. Porcelain tubes;

[0036] 20. Nozzle housing; 21. Cylinder; 22. Electrode post; 23. Annular cavity; 24. Semiconductor ceramic tube; 25. Ignition port. Detailed Implementation

[0037] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are some embodiments of the present invention, but not all embodiments.

[0038] In some embodiments of the present invention, a method for manufacturing a semiconductor electrical nozzle for an aero-engine includes the following steps:

[0039] Step 1: Using Mo-30W tungsten-molybdenum alloy as raw material, the nozzle housing is machined using turning, milling and other mechanical processing methods.

[0040] like Figure 1 The electric nozzle housing 20 includes a cylindrical body 21 with one end open and the other end closed. An electrode post 20 is located at the center of the cylindrical body. The electrode post 20 is connected to the bottom of the cylindrical body 21, forming an annular cavity 23 between the cylindrical body 21 and the electrode post 22.

[0041] The nozzle housing 20 is integrally machined to ensure the molding precision of the semiconductor nozzle.

[0042] Step 2: Place the SiC-Al2O3 composite ceramic powder into the annular cavity 23 of the nozzle housing, and compact it using a vibration table. Then, use cold isostatic pressing to compact the silicon carbide ceramic powder.

[0043] The cold isostatic pressing process used is as follows:

[0044] The compacted electric nozzle housing is inserted into a flexible diaphragm-type covering sleeve and placed in a cold isostatic pressing device. It is then pressurized at 180 MPa for 2 hours. The pressure is then released in increments of 60 MPa, with each pressure release step held for 10 minutes until the pressure is completely released, thus obtaining a preform.

[0045] Step 3: The preform is placed in a hot isostatic pressing furnace for hot isostatic pressing treatment, which solidifies the silicon carbide ceramic powder and forms a tight connection with the nozzle housing, obtaining a semiconductor nozzle semi-finished product. A semiconductor ceramic tube 24 is formed inside the nozzle housing; for example... Figure 3 As shown.

[0046] The process steps for hot isostatic pressing of precast blanks are as follows: under a preset pressure, the precast blanks are heated from room temperature to 1750°C, then cooled to 1400°C, and then naturally cooled from 1400°C to room temperature.

[0047] High-purity argon was used as the pressurizing medium. The control parameters for the hot isostatic pressing process are shown in Table 1.

[0048] Table 1 Control parameters for hot isostatic pressing process

[0049]

[0050]

[0051] Step 4: Process the semiconductor nozzle semi-finished product. A firing port 25 conforming to the nozzle requirements is formed at the closed end of the cylinder. At this point, the electrode post protrudes from the firing port, thus integrally forming a semiconductor nozzle with electrodes and a semiconductor ceramic tube. Figure 4 As shown.

[0052] The semiconductor electric nozzle obtained from the processing is welded with a threaded interface, polished, and tested for insulation resistance, ignition voltage, and airtightness to obtain the finished semiconductor electric nozzle.

[0053] Experiments show that the tungsten-molybdenum alloy-silicon carbide semiconductor electric nozzle prepared by the method of this invention did not leak during the airtightness test at 5MPa; the insulation resistance, ignition voltage and other properties of the semiconductor electric nozzle can reach the same level as existing semiconductor electric nozzles.

[0054] In the description of this invention, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., used to indicate the orientation or positional relationship are based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship that the product of this invention is usually placed in during use. They are only for the convenience of describing this invention and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

[0055] Furthermore, the use of terms such as "horizontal" and "vertical" in the description of this invention does not imply that the components are required to be absolutely horizontal or suspended, but rather that they can be slightly tilted. For example, "horizontal" simply means that its direction is more horizontal than "vertical," and does not mean that the structure must be completely horizontal, but can be slightly tilted.

[0056] In the description of this invention, it should also be noted that, unless otherwise explicitly specified and limited, the terms "set," "install," "connect," and "link" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention in light of the specific circumstances.

[0057] The above description is merely a preferred embodiment of the present invention and is not intended to limit the present invention in any way. Any simple modifications or equivalent changes made to the above embodiments based on the technical essence of the present invention shall fall within the protection scope of the present invention.

Claims

1. A method for manufacturing semiconductor electrical nozzles for aero-engines, characterized in that, Includes the following steps: An electric nozzle housing is prepared, the electric nozzle housing includes a cylindrical body with one end open and the other end closed, an electrode post is arranged at the center of the cylindrical body, the electrode post is connected to the bottom of the cylindrical body, and an annular cavity is formed between the cylindrical body and the electrode post; Silicon carbide ceramic powder is filled into the annular cavity and compacted to obtain a preform; The preform is placed in a hot isostatic pressing furnace for hot isostatic pressing treatment to solidify the silicon carbide ceramic powder and obtain a semiconductor electric nozzle semi-finished product. Semiconductor electric nozzle semi-finished products are processed, and the firing port is formed at the closed end of the cylinder.

2. The method for manufacturing a semiconductor electrical nozzle for an aero-engine according to claim 1, characterized in that, The process steps for hot isostatic pressing of precast blanks are as follows: under a preset pressure, the precast blanks are heated from room temperature to 1750°C, then cooled to 1400°C, and then naturally cooled from 1400°C to room temperature.

3. The method for manufacturing a semiconductor electrode for an aero-engine according to claim 2, characterized in that, The process steps for hot isostatic pressing of precast blanks are as follows: Heating from room temperature to 200°C for 120 minutes; Heating from 200℃ to 1200℃ for 120 minutes; Heating from 1200℃ to 1650℃ for 180 minutes; Heating from 1650℃ to 1750℃ for 240 minutes; The temperature was lowered from 1750℃ to 1400℃ in 60 minutes. Allow it to cool naturally from 1400℃ to room temperature.

4. The method for manufacturing a semiconductor electrode for an aero-engine according to claim 2 or 3, characterized in that, The preset pressure is 20-30 MPa.

5. The method for manufacturing a semiconductor electrical nozzle for an aero-engine according to claim 1, characterized in that, The silicon carbide ceramic powder filling the annular cavity was compacted by cold isostatic pressing.

6. The method for manufacturing a semiconductor electrode for an aero-engine according to claim 5, characterized in that, The process steps of the cold isostatic pressing are as follows: the electric nozzle housing filled with silicon carbide ceramic powder is installed into the covering sleeve, and pressurized to 100-300MPa in the cold isostatic pressing equipment and held for 2-3 hours; then the pressure is released, and during the pressure release, the pressure is released in increments of 50-60MPa, and the pressure is held for 10-20 minutes at each pressure release step until the pressure is completely released.

7. The method for manufacturing a semiconductor electrode for an aero-engine according to claim 1, characterized in that, The nozzle housing is integrally machined.

8. The method for manufacturing a semiconductor electrical nozzle for an aero-engine according to claim 1 or 7, characterized in that, The nozzle housing is made of Mo-30W tungsten-molybdenum alloy.

9. The method for manufacturing a semiconductor electrode for an aero-engine according to claim 1, characterized in that, The silicon carbide ceramic powder used is SiC-Al2O3.

10. A semiconductor nozzle prepared by the method for manufacturing aero-engine semiconductor nozzles according to any one of claims 1-9.

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