Method for forming carbon-containing film

Abstract

An exemplary embodiment of the present disclosure provides a method of forming an amorphous carbon-containing film on a substrate housed in a chamber, the method comprising: spraying a silicon-containing source gas into an interior of the chamber; forming a first plasma by supplying a first radio frequency power to the interior of the chamber while spraying the carbon and the plasma forming gas to the interior of the chamber; and forming a second plasma by supplying a second radio frequency power to the interior of the chamber while spraying the plasma forming gas to the interior of the chamber, wherein the first radio frequency power may be greater than the second radio frequency power. Therefore, according to an exemplary embodiment of the present disclosure, a carbon-containing film can be easily formed by a deposition method. That is, an amorphous carbon-containing film can be easily formed by a deposition method. In addition, an amorphous carbon-containing film having an increased carbon content and a reduced impurity content can be formed. In addition, an amorphous carbon-containing film having a dense film quality may be formed.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to a method of forming a carbon-containing film, and more particularly, to a method of forming a carbon-containing film that can easily form a carbon-containing film. BACKGROUND

[0002] In the fields of semiconductors, displays, and solar cells, there are many demands for using a carbon-containing film, and in order to form a carbon-containing film, there are demands for a plasma processing method and apparatus that uses plasma to form a carbon-containing film.

[0003] PRIOR ART DOCUMENTS (Patent Document 1) Patent Document 1: Korean Patent No. 10-1984694 SUMMARY

[0004] TECHNICAL PROBLEM The present disclosure provides a method of forming a carbon-containing film that can easily form a carbon-containing film.

[0005] The present disclosure provides a method of forming a carbon-containing film that can easily form an amorphous carbon-containing film.

[0006] TECHNICAL SOLUTION According to an exemplary embodiment of the present disclosure, a method of forming an amorphous carbon-containing film on a substrate contained in a chamber includes: spraying a silicon-containing source gas into an interior of the chamber; forming a first plasma by supplying a first radio frequency power to the interior of the chamber while spraying a carbon and plasma forming gas into the interior of the chamber; and forming a second plasma by supplying a second radio frequency power to the interior of the chamber while spraying a plasma forming gas into the interior of the chamber, wherein the step of forming the first plasma and the step of forming the second plasma include adjusting the first radio frequency power to be greater than the second radio frequency power.

[0007] The method of forming a carbon-containing film according to an exemplary embodiment of the present disclosure can include adjusting a temperature of the substrate to be about 200°C to about 1200°C.

[0008] The step of forming the first plasma can include adjusting the first radio frequency power to be about 800 Watt to about 1000 Watt, and the step of forming the second plasma includes adjusting the second radio frequency power to be about 100 Watt to about 300 Watt.

[0009] The plasma forming gas sprayed in the step of forming the first plasma and the step of forming the second plasma can include any one or a combination of a hydrogen-containing gas, argon, or helium.

[0010] The first plasma and the second plasma can be plasmas formed in the interior of the chamber.

[0011] In the step of forming the first plasma and the step of forming the second plasma, a potential difference between a first electrode and a second electrode installed inside the chamber can be used to form the first plasma and the second plasma.

[0012] The time for forming the first plasma can be shorter than the time for forming the second plasma.

[0013] The time for forming the first plasma can be about 2 seconds to about 5 seconds, and the time for forming the second plasma can be greater than about 5 seconds and less than about 7 seconds.

[0014] Between the step of spraying the source gas and the step of forming the first plasma by supplying the first radio frequency power to the inside of the chamber while spraying the carbon and plasma forming gas to the inside of the chamber, either one of the following two can be performed: a step of evacuating the chamber; and a step of evacuating the chamber while spraying a purge gas to the inside of the chamber.

[0015] In the step of spraying the carbon and plasma forming gas, the plasma forming gas can include hydrogen, and either a carbon-containing gas and a hydrogen-containing gas separately prepared can be sprayed, or a gas containing both carbon and hydrogen can be sprayed.

[0016] Between the step of spraying the source gas and the step of forming the first plasma while spraying the carbon and plasma forming gas, a step of forming a third plasma by spraying the plasma forming gas to the inside of the chamber can be included.

[0017] According to an exemplary embodiment of the present disclosure, a method of forming an amorphous carbon-containing film on a substrate accommodated in a chamber, wherein the chamber includes: a first plate including a first gas supply port and a second gas supply port; a second plate having a plurality of openings, the second plate being electrically insulated from the first plate, spaced apart from the first plate, and the plurality of openings being arranged alternately with the first gas supply port and the second gas supply port; and a turbo molecular pump (TMP), the method including: spraying a source gas containing silicon to the inside of the chamber; forming a first plasma by supplying a first radio frequency power to the inside of the chamber while spraying a carbon and plasma forming gas to the inside of the chamber; and forming a second plasma by supplying a second radio frequency power to the inside of the chamber while spraying the plasma forming gas to the inside of the chamber, wherein the step of forming the first plasma and the step of forming the second plasma include adjusting the first radio frequency power to be greater than the second radio frequency power.

[0018] The method of forming a carbon-containing film according to an exemplary embodiment of the present disclosure can include adjusting a temperature of the substrate to be about 200°C to about 1200°C.

[0019] The step of forming the first plasma can include adjusting the first radio frequency power to be about 800 Watt to about 1000 Watt, and the step of forming the second plasma includes adjusting the second radio frequency power to be about 100 Watt to about 300 Watt.

[0020] The plasma forming gas sprayed in the step of forming the first plasma and the step of forming the second plasma can include any one of a hydrogen-containing gas, argon, or helium, or a combination thereof.

[0021] The method of forming the carbon-containing film can include adjusting the pressure of the inside of the chamber to be a pressure of about 10 mTorr to about 50 mTorr using a turbo molecular pump (TMP).

[0022] Advantageous Effects According to the exemplary embodiments of the present disclosure, a carbon-containing film can be easily formed by a deposition method. That is, an amorphous carbon-containing film can be easily formed by a deposition method.

[0023] Further, an amorphous carbon-containing film having an increased carbon content and a reduced impurity content can be formed. Further, an amorphous carbon-containing film having a dense film quality can be formed. BRIEF DESCRIPTION OF DRAWINGS

[0024] Figure 1 FIG. 1 is a diagram schematically illustrating a first substrate processing apparatus in which a carbon-containing film is formed according to an exemplary embodiment of the present disclosure; Figure 2 (a) to (c) of FIG. 1 are process diagrams conceptually illustrating a method of forming an amorphous carbon-containing film on a substrate by a method according to an exemplary embodiment of the present disclosure; Figure 3 FIG. 2 is a diagram schematically illustrating a first substrate processing apparatus in which a carbon-containing film is formed according to an exemplary embodiment of the present disclosure; Figure 4 (a) to (d) of FIG. 3 are process diagrams conceptually illustrating a method of forming a carbon-containing film on a substrate by a method according to another exemplary embodiment of the present disclosure; Figure 5 FIG. 4 is a diagram schematically illustrating a second substrate processing apparatus in which a carbon-containing film can be formed according to an exemplary embodiment of the present disclosure; Figure 6 FIG. 5 is a perspective view schematically illustrating a substrate support portion in the second substrate processing apparatus; Figure 7 FIG. 6 is a plan view schematically illustrating the substrate support portion in the second substrate processing apparatus; Figure 8 FIG. 7 is a side cross-sectional view schematically illustrating a spraying portion in the second substrate processing apparatus; Figure 9 FIG. 8 is a plan view schematically illustrating the spraying portion in the second substrate processing apparatus; Figure 10is a plan view of a variation example of a spraying section in the second substrate processing apparatus; Figure 11 is a flowchart schematically illustrating a method of forming a carbon-containing film according to an exemplary embodiment of the present disclosure by using the second substrate processing apparatus; Figure 12 is a diagram schematically illustrating a third substrate processing apparatus in which a carbon-containing film can be formed according to an exemplary embodiment of the present disclosure; Figure 13 is a diagram showing a state in which a carbon-containing film is formed on a substrate according to an exemplary embodiment of the present disclosure; Figure 12 is a diagram showing an arrangement structure of openings in the third substrate processing apparatus shown in Figure 14 is a diagram showing how a supply port and an opening are formed in a gas spraying device in the third substrate processing apparatus shown in Figure 12 DETAILED DESCRIPTION

[0025] Embodiments of the present disclosure will be described in detail below with reference to the accompanying drawings. However, the present disclosure is not limited to the exemplary embodiments disclosed below, but can be implemented in various different forms. Rather, these embodiments are provided so that the present disclosure will be thorough and complete, and fully convey the scope of the present disclosure to those having ordinary knowledge in the art. The accompanying drawings can be exaggerated to describe exemplary embodiments of the present disclosure.

[0026] Figure 1 is a diagram illustrating a state in which a carbon-containing film is formed on a substrate by a method according to an exemplary embodiment of the present disclosure.

[0027] A carbon-containing film 20 can be formed on a substrate 10. That is, an amorphous carbon-containing film 20 can be formed on the substrate 10 by a deposition method.

[0028] The substrate 10 can be any one of a wafer or glass. Further, in the case where the substrate 10 is a wafer, for example, the wafer can be a silicon (Si) wafer.

[0029] The carbon-containing film 20 can be formed by a deposition process. Further, the carbon-containing film 20 can be an amorphous carbon-containing film.

[0030] Figure 2 (a) to (c) of FIG. 1 show conceptual diagrams of process diagrams of a method of forming an amorphous carbon-containing film on a substrate by a method according to an exemplary embodiment of the present disclosure.

[0031] The method of forming the carbon-containing film 20 can include a step of forming a silicon (Si)-containing film 21 on the substrate 10 by spraying a Si-containing source gas toward the substrate 10, a step of forming a first plasma while spraying a carbon (C)-containing gas to form an amorphous carbon-containing film 20, and a step of forming a second plasma.

[0032] ​Hereinafter, for the convenience of description, the step of forming the silicon-containing film 21 will be referred to as a'source gas spouting step'. Further, the step of forming the first plasma while spouting the carbon-containing gas will be referred to as a 'first plasma formation step', and the step of forming the second plasma will be referred to as a'second plasma formation step'.

[0033] The'source gas spouting step - first plasma formation step - second plasma formation step' can be performed as one carbon-containing film formation cycle (CY). That is, the method of forming a carbon-containing film includes a carbon-containing film formation cycle (CY), which can include the source gas spouting step, the first plasma formation step, and the second plasma formation step.

[0034] Further, the method of forming a carbon-containing film can further include at least one of an exhaust step (primary exhaust step) performed between the source gas spouting step and the first plasma formation step, and an exhaust step (secondary exhaust step) performed after the first plasma formation step. Here, the exhaust can mean evacuation of the inside of the substrate processing apparatus in which the substrate 10 is loaded, or the inside of a chamber constituting the substrate processing apparatus.

[0035] In the case where the method of forming a carbon-containing film includes the exhaust step, the'source gas spouting step - primary exhaust step - first plasma formation step - second plasma formation step - secondary exhaust step' can be performed as one carbon-containing film formation cycle (CY). That is, the method of forming a carbon-containing film includes a carbon-containing film formation cycle (CY), which can include the source gas spouting step, the primary exhaust step, the first plasma formation step, the second plasma formation step, and the secondary exhaust step. In this case, in the carbon-containing film formation cycle (CY), at least one of the primary exhaust step and the secondary exhaust step can be omitted.

[0036] Further, the carbon-containing film formation cycle (CY) as described above can be performed n times (n: 1, 2, 3,...). That is, the step of forming a carbon-containing film can include one (n = 1) or two or more (n ≥ 2) carbon-containing film formation cycles (CY). Here, two or more can mean multiple times.

[0037] Figure 3 is a schematic view of a first substrate processing apparatus for forming a carbon-containing film according to an example embodiment of the present disclosure.

[0038] Hereinafter, a Figure 3 first substrate processing apparatus shown.

[0039] Referring to Figure 3The substrate processing apparatus may include a chamber 1000, a support member 2000 installed in the chamber 1000 to support the substrate 10, a first gas spraying section 3000a and a second gas spraying section 3000b respectively installed inside the chamber 1000 to face the support member 2000, a gas supply unit 4000 that supplies process gas to the first gas spraying section 3000a and the second gas spraying section 3000b, an antenna 6100 having a coil for inducing an electric field in the chamber 1000 to generate plasma, and a power supply unit 6200 connected to the antenna 6100.

[0040] In addition, the substrate processing apparatus may include a heating unit 5000 mounted facing the support member 2000, a drive unit 7000 for raising / lowering or rotating the support member 2000, and an exhaust unit 8000 for discharging gases and impurities present inside the chamber 1000.

[0041] The chamber 1000 may have a cylindrical shape with internal space; for example, it may be as follows: Figure 3 The dome shape is shown. More specifically, the chamber 1000 may include a chamber body 1100, an upper body 1200 mounted on the upper portion of the chamber body 1100, and a lower body 1300 mounted on the lower portion of the chamber body 1100. The chamber body 1100 may have a cylindrical shape with open upper and lower portions. The upper body 1200 may be mounted to cover the upper opening of the chamber body 1100, and the lower body 1300 may be mounted to cover the lower opening of the chamber body 1100. Furthermore, the upper body 1200 may have a dome shape with an inclined surface, wherein the height of the inclined surface increases towards its center along the width direction. Furthermore, the lower body 1300 may have a dome shape with an inclined surface, wherein the height of the inclined surface decreases towards its center along the width direction. This chamber 1000 (i.e., the chamber body 1100, the upper body 1200, and the lower body 1300) may be made of a transparent material that allows light to pass through, such as quartz.

[0042] The gas supply unit 4000 may include a source gas supply unit 4100 for supplying silicon (Si)-containing gas (i.e., source gas) and a carbon-containing gas supply unit 4200 for supplying carbon-containing gas. Furthermore, the gas supply unit 4000 may include a gas supply unit for forming plasma. Specifically, the gas supply unit 4000 may include at least one of a hydrogen-containing gas supply unit 4300 for supplying hydrogen-containing gas, an argon gas supply unit 4400 for supplying argon (Ar), and a helium gas supply unit 4700 for supplying helium (He). Additionally, the gas supply unit 4000 may further include a purge gas supply unit (not shown in the figure) for supplying purge gas.

[0043] Further, the gas supply unit 4000 can include a first delivery pipe 4500a connecting the source gas supply unit 4100, the carbon-containing gas supply unit 4200, and the first gas spouting section 3000a, and a second delivery pipe 4500b connecting at least one of the hydrogen-containing gas supply unit 4300, the argon gas supply unit 4400, and the helium gas supply unit 4700 to the second gas spouting section 3000b Further, the gas supply unit 4000 can include a plurality of first connection pipes 4600a connecting the source gas supply unit 4100 and the carbon-containing gas supply unit 4200 to the first delivery pipe 4500a, a valve body installed in each of the first connection pipes 4600a, a plurality of second connection pipes 4600b connecting at least one of the hydrogen-containing gas supply unit 4300, the argon gas supply unit 4400, and the helium gas supply unit 4700 to the second delivery pipe 4500b, and a valve body installed in each of the second connection pipes 4600b.

[0044] Next, the carbon-containing film 20 can be formed on the substrate using the substrate processing apparatus as described above. More specifically, an amorphous carbon-containing film 20 can be formed.

[0045] Hereinafter, the carbon-containing film formation cycle (CY) will be described in detail with reference to (a) to (c) of FIG. 10 and Figure 2 Figure 3 The carbon-containing film formation cycle (CY) will be described in detail. Further, a method of forming an amorphous carbon-containing film on a substrate will be described.

[0046] First, the substrate 10 is loaded in the inside of the chamber 1000, and the substrate 10 is reliably set on the support 2000. Next, the chamber 1000 or the substrate 10 is heated using the heating unit 5000. In this case, the substrate 10 is heated to a temperature of about 200°C to about 1200°C (about 200°C or more and about 1200°C or less). The temperature of the substrate 10 is maintained at about 200°C to about 1200°C while the process is performed.

[0047] In a case where the temperature of the substrate 10 is heated to about 200°C to about 1200°C, a gas containing silicon (Si) (source gas) is spouted to the substrate 10. That is, the source gas contained in the source gas supply unit 4100 is supplied to the first gas spouting section 3000a through the first connection pipe 4600a and the first delivery pipe 4500a. Accordingly, the source gas is spouted from the first gas spouting section 3000a. That is, the source gas containing silicon (Si) is spouted into the inside of the chamber 1000 in which the substrate 10 is loaded. For example, the source gas can be SiH2Cl2 (dichlorosilane; DCS) gas. Of course, the source gas is not limited to the above-described material, and various gases containing silicon (Si) can be used.

[0048] ​In the case where the source gas is sprayed toward the substrate 10, the source gas is deposited or adsorbed on one surface of the substrate 10. Thus, the silicon-containing film 21 is deposited on the substrate 10 as shown in (a) of FIG. 1. More specifically, in the case where the SiH2Cl2gas is used as the source gas, a SiH2Cl2layer can be formed on the substrate 10. Here, the silicon-containing film 21 can be referred to as a monolayer or an atomic layer containing silicon. Figure 2

[0049] In the case where the step of spraying the source gas is completed, the exhaust unit 8000 is operated to exhaust the inside of the chamber 1000 in which the substrate 10 is loaded (primary exhaust). In other words, the inside of the chamber 1000 is evacuated. Here, the exhaust unit 8000 can be a means including a duct connected to the chamber 1000 and a pump connected to the duct.

[0050] In the above, the case where the inside of the chamber 1000 is exhausted after the step of spraying the source gas is completed has been described. However, the description is not limited to this, and the chamber 1000 can be exhausted while a purge gas is sprayed into the chamber 1000 after the step of spraying the source gas is completed.

[0051] In the case where the primary exhaust is completed, the first plasma is formed while a carbon (C)-containing gas is sprayed toward the silicon-containing film 21. To this end, the carbon (C)-containing gas contained in the carbon (C)-containing gas supply unit 4200 is supplied to the first gas spraying portion 3000a through the first connection duct 4600a and the first delivery duct 4500a. Thus, the carbon (C)-containing gas is sprayed from the first gas spraying portion 3000a. That is, a gas containing carbon (C) is sprayed into the inside of the chamber 1000 in which the substrate 10 is loaded.

[0052] Further, the first plasma is formed by spraying the carbon (C)-containing gas while a plasma-forming gas is sprayed. For example, a hydrogen-containing gas can be used as the plasma-forming gas. To form the first plasma using the hydrogen-containing gas, the hydrogen-containing gas contained in the hydrogen-containing gas supply unit 4300 is supplied to the second gas spraying portion 3000b through the second connection duct 4600b and the second delivery duct 4500b. Thus, the hydrogen-containing gas is sprayed from the second gas spraying portion 3000b. That is, a gas containing hydrogen (H) is sprayed into the inside of the chamber 1000 in which the substrate 10 is loaded. Here, the hydrogen-containing gas can be 'hydrogen gas'.

[0053] ​Next, while the carbon-containing gas and the hydrogen-containing gas are being sprayed, a first plasma is formed in the inside of the chamber 1000. That is, the gas sprayed into the inside of the chamber 1000 is discharged to form the first plasma, which in this case can be a hydrogen plasma. In order to form the first plasma, a power source or power is applied to the antenna 6100 by using the power supply unit 6200 while the carbon-containing gas and the hydrogen-containing gas are being sprayed into the inside of the chamber 1000. In this case, the power source applied to the antenna 6100 can be a radio frequency (RF) power (hereinafter, first radio frequency power).

[0054] The first radio frequency power can be a power source that is greater than the second radio frequency power in the step of forming the second plasma. Further, in forming the first plasma, the first plasma can take less time to form than the second plasma formed later. That is, the time taken to form the first plasma can be about 2 seconds to about 5 seconds (more than 2 seconds and less than about 5 seconds). That is, the first plasma is formed for about 2 seconds to about 5 seconds.

[0055] In adjusting the first radio frequency power applied to the antenna 6100, the first radio frequency power can be adjusted to be about 600 Watt to about 1000 Watt based on a substrate having a diameter, width, or length of about 300 mm. As a more specific example, the first radio frequency power can be adjusted to be about 600 Watt to about 800 Watt, about 700 Watt to about 900 Watt, or about 800 Watt to about 1000 Watt. In adjusting the first radio frequency power applied to the antenna 6100 by another method, it can be adjusted to be about 8.5 mmW / mm 2 to about 14.1 mmW / mm 2 of the substrate per unit area. As a more specific example, the first radio frequency power applied per unit area of the substrate can be adjusted to be about 8.5 mmW / mm 2 to about 10.1 mmW / mm 2 , to be about 9.9 mmW / mm 2 to about 12.7 mmW / mm 2 , or to be about 10.0 mmW / mm 2 to about 14.1 mmW / mm 2 .

[0056] Here, since the antenna 6100 is connected to the chamber 1000, applying the first radio frequency power to the antenna 6100 can mean applying the first radio frequency power to the chamber 1000.

[0057] By adjusting the first radio frequency power in this way, the content of carbon (C) deposited on the silicon-containing film 21 can be increased. In other words, an amorphous carbon-containing film 20 containing a large amount of carbon (C) can be formed.

[0058] In the above, the case where the first plasma is formed by spattering a hydrogen-containing gas has been described. However, a gas other than the hydrogen-containing gas can be used when the first plasma is formed. That is, the first plasma can be formed by spattering a carbon-containing gas while spattering one or a combination of the hydrogen-containing gas, helium gas, and helium gas. In other words, the first plasma can be formed by spattering at least one of the hydrogen-containing gas, helium gas, and helium gas and the carbon-containing gas.

[0059] When at least one of the helium gas and helium gas is spattered, the gas contained in at least one of the argon gas supply unit 4400 and the helium gas supply unit 4700 is supplied to the second gas spattering portion 3000b through the second connection pipe 4600b and the second delivery pipe 4500b. Thus, at least one of the argon gas and the helium gas is spattered from the second gas spattering portion 3000b.

[0060] In the case where the carbon-containing gas is spattered, carbon (C) can be deposited on the silicon-containing film 21. Further, in the case where the carbon-containing gas is spattered while the first plasma is formed as described above, the amount of carbon (C) deposited or bonded on the silicon-containing film 21 can increase. That is, the deposition or bonding of carbon (C) on the silicon-containing film 21 can be promoted by the formation of the first plasma. Thus, a carbon-containing film 20 having a large amount of carbon (C) can be formed. In this case, the temperature of the substrate 10 is about 200°C to about 1200°C, and the carbon-containing film 20 formed by the formation of the first plasma can be amorphous.

[0061] Further, since carbon (C) is deposited by spattering the carbon-containing gas to the silicon-containing film 21, the carbon-containing film 20 can contain silicon (Si) in addition to carbon (C). That is, in the case where carbon (C) is bonded or deposited on the silicon-containing film 21 without forming the first plasma, the thin film formed by spattering the carbon-containing gas to the silicon-containing film 21 can be a silicon carbide (SiC) film. In other words, in the case where the carbon-containing gas is spattered without forming the first plasma, a carbon-containing film containing a large amount of silicon (Si) can be formed.

[0062] In the exemplary embodiment, the first plasma is formed while the carbon-containing gas is spattered, and the temperature of the substrate 10 is adjusted to be about 200°C to about 1200°C while the process is performed. Thus, among carbon (C) and silicon (Si) contained in the carbon-containing film 20, silicon (Si) can be separated from the carbon-containing film 20. That is, although the carbon-containing film can contain not only carbon (C) but also silicon (Si), the silicon (Si) contained in the carbon-containing film 20 can be sublimated and thus removed by the formation of the first plasma.

[0063] On the other hand, in a case where the temperature of the substrate 10 is less than about 200°C, the content of carbon contained in the carbon-containing film 20 can be small. In addition, in a case where the temperature of the substrate 10 is less than about 200°C, the carbon-containing film 20 can contain a large amount of silicon (Si). Therefore, the content of carbon (C) contained in the amorphous carbon-containing film 20 is small, and thus the quality of the carbon-containing film 20 can be deteriorated. On the contrary, in a case where the temperature of the substrate 10 exceeds about 1200°C, there is a defect that the temperature of the substrate increases or power consumption for plasma formation increases. In addition, a thin film (a bottom film) formed in a lower portion of the carbon-containing film 20 can be damaged by heat.

[0064] In addition, in a case where the substrate having a diameter, width, or length of about 300 mm is used, in a case where the first radio frequency power applied to the antenna 6100 is less than about 600 Watt, the content of carbon contained in the carbon-containing film 20 can be small, and the carbon-containing film 20 can contain a large amount of silicon (Si). Therefore, the content of carbon (C) contained in the amorphous carbon-containing film 20 is small, and thus the quality of the carbon-containing film 20 can be deteriorated. On the contrary, in a case where the substrate having a diameter, width, or length of about 300 mm is used, in a case where the first radio frequency power applied to the antenna 6100 exceeds about 1000 Watt, there is a problem that the temperature of the substrate increases or power consumption for plasma formation increases. In addition, a thin film (a bottom film) formed in a lower portion of the carbon-containing film 20 can be damaged by heat.

[0065] In addition, in a case where the power per unit area of the substrate when adjusting the first radio frequency power applied to the antenna 6100 is less than about 8.5 mmW / mm 2 , the content of carbon contained in the carbon-containing film 20 can be small, and the carbon-containing film 20 can contain a large amount of silicon (Si). Therefore, the content of carbon (C) contained in the amorphous carbon-containing film 20 is small, and thus the quality of the carbon-containing film 20 can be deteriorated. On the contrary, in a case where the power per unit area of the substrate when adjusting the first radio frequency power applied to the antenna 6100 exceeds about 14.1 mmW / mm 2 , there is a defect that the temperature of the substrate increases or power consumption for plasma formation increases. In addition, a thin film (a bottom film) formed in a lower portion of the carbon-containing film 20 can be damaged by heat.

[0066] When the step of forming the first plasma is completed, the second plasma is formed in the inside of the chamber 1000. For example, while the hydrogen-containing gas is sprayed into the inside of the chamber 1000, the second RF power is applied to the antenna 6100 by using the power supply unit 6200. More specifically, the hydrogen-containing gas contained in the hydrogen-containing gas supply unit 4300 is supplied to the second gas spraying portion 3000b through the second connection pipe 4600b and the second delivery pipe 4500b. Thus, the hydrogen-containing gas is sprayed from the second gas spraying portion 3000b. That is, the hydrogen-containing gas is sprayed into the inside of the chamber 1000. Then, the second RF power is applied to the antenna 6100 by using the power supply unit 6200. Thus, the second plasma, i.e., hydrogen plasma, can be formed.

[0067] In this case, the second RF power, which is less than the first RF power applied when the first plasma is formed, is applied to the antenna 6100. Further, the second plasma can take a longer time to form than the first plasma when the second plasma is formed. That is, the time taken to form the second plasma can be greater than about 5 seconds and less than about 7 seconds. That is, the formation of the second plasma is greater than about 5 seconds and less than about 7 seconds.

[0068] When the second RF power applied to the antenna 6100 is adjusted, the second RF power can be adjusted to be about 50 Watt to about 300 Watt based on the substrate having a diameter, a width, or a length of about 300 mm. As a more specific example, the second RF power can be adjusted to be about 50 Watt to about 100 Watt, about 80 Watt to about 200 Watt, or about 100 Watt to about 300 Watt. When the second RF power applied to the antenna 6100 is adjusted by another method, it can be adjusted to be about 0.7 mmW / mm 2 to about 4.2 mmW / mm 2 . As a more specific example, the second RF power applied per unit area of the substrate can be adjusted to be about 0.7 mmW / mm 2 to about 1.4 mmW / mm 2 , to be about 1.1 mmW / mm 2 to about 2.8 mmW / mm 2 , or to be about 1.4 mmW / mm 2 to about 4.2 mmW / mm 2 .

[0069] Here, since the antenna 6100 is connected to the chamber 1000, the application of the second RF power to the antenna 6100 can mean the application of the second RF power to the chamber 1000.

[0070] By forming the second plasma in this way, the amorphous carbon-containing film 20 can be exposed to the hydrogen plasma (second plasma). In the case where the carbon-containing film 20 is exposed to the second plasma, impurities contained in the carbon-containing film 20 can be removed, and the carbon-containing film 20 can be densified. That is, by forming the second plasma by adjusting the second radio frequency power in the method as described above, impurities contained in the carbon-containing film 20 can be removed, and the carbon-containing film can be densified. Thus, a dense and amorphous carbon-containing film 20 having a low impurity content or no impurities is formed.

[0071] In the above, the case where the second plasma (hydrogen plasma) is formed by spraying a hydrogen-containing gas has been described. However, a gas other than the hydrogen-containing gas can be used when forming the second plasma. That is, the second plasma can be formed by spraying one of a hydrogen-containing gas, helium gas, and helium gas or a gas containing a combination thereof together with the carbon-containing gas. In other words, the second plasma can be formed by spraying at least one of a hydrogen-containing gas, argon gas, and helium gas together with the carbon-containing gas.

[0072] On the other hand, in the case where the carbon-containing film is formed on a substrate having a diameter, width, or length of about 300 mm, in the case where the second radio frequency power applied to the antenna 6100 is less than about 50 Watt when forming the second plasma, a carbon-containing film that is not densified or has a small amount of impurities removed from the carbon-containing film 20 can be formed. Further, in the case where the second radio frequency power applied to the antenna 6100 exceeds about 300 Watt, there can be a problem that power consumption for plasma formation increases. Further, a bottom film formed in the lower portion of the carbon-containing film 20 can be damaged by heat.

[0073] Further, in the case where the power per unit area of the substrate when adjusting the second radio frequency power applied to the antenna 6100 is less than about 0.7 mmW / mm 2 , a carbon-containing film that is not densified or has a small amount of impurities removed from the carbon-containing film 20 can be formed. In contrast, in the case where the power per unit area of the substrate when adjusting the second radio frequency power applied to the antenna 6100 exceeds about 4.2 mmW / mm 2 , there can be a problem that power consumption for plasma formation increases, and a bottom film formed in the lower portion of the carbon-containing film 20 can be damaged by heat.

[0074] After that, the exhaust unit 8000 is operated to evacuate the inside of the chamber 1000 in which the substrate 10 is loaded (secondary evacuation).

[0075] The steps including the source gas sparging step, the preliminary exhaust step, the first plasma formation step, the second plasma formation step, and the secondary exhaust step as described above can be performed as one carbon-containing film formation cycle (CY). That is, the cycle (C) of forming a carbon-containing film can include 'the source gas sparging step - the preliminary exhaust step - the first plasma formation step - the second plasma formation step - the secondary exhaust step'. Subsequently, the carbon-containing film formation cycle (CY) can be performed once or continuously performed a plurality of times to form a carbon-containing film 20 having a target thickness.

[0076] In the above, it has been described regarding a case where the carbon-containing gas and the hydrogen-containing gas are separately supplied and then sparged when the first plasma is formed by sparging the hydrogen-containing gas. However, a gas containing both carbon and hydrogen can be supplied into the inside of the chamber 1000. To this end, the substrate processing apparatus can include a mixed gas storage unit that supplies a mixed gas containing carbon and hydrogen, and the mixed gas storage unit can be connected to at least one of the first gas sparging portion 3000a and the second gas sparging portion 3000b. Thus, the mixed gas in the mixed gas storage unit can be sparged into the inside of the chamber 1000 through at least one of the first gas sparging portion 3000a and the second gas sparging portion 3000b. In this case, for example, the mixed gas containing carbon and hydrogen can be a methane (CH4) gas. Of course, the mixed gas containing carbon and hydrogen is not limited to the above example, and various gases containing carbon and hydrogen can be applied.

[0077] Further, in a case where the mixed gas containing carbon and hydrogen is sparged while the first plasma is formed, the bond between carbon (C) and hydrogen (H) can be broken by the first plasma. Then, hydrogen (H) separated from carbon (C) can be removed as a gas or in a gaseous state.

[0078] Further, in the above, it has been described regarding a case where the method of forming a carbon-containing film includes the exhaust step. However, the description is not limited thereto, and the method of forming a carbon-containing film can include a purge step, and evacuation and purge of the chamber can be performed together. That is, the method of forming a carbon-containing film can further include at least one of an evacuation and purge step performed between the source gas sparging step and the first plasma formation step and an evacuation and purge step performed after the first plasma formation step.

[0079] Figure 4 (a) to (d) of FIG. 1 show conceptual diagrams of process diagrams of a method of forming a carbon-containing film on a substrate by a method according to another exemplary embodiment of the present disclosure.

[0080] In comparison with the first example embodiment, the carbon-containing film formation cycle (CY) according to the second example embodiment can further include a plasma formation step (hereinafter, third plasma formation step) between the source gas spouting step and the first plasma formation step. More specifically, the carbon-containing film formation cycle (CY) according to the second example embodiment can further include a step of forming a third plasma between the source gas spouting step and the preliminary exhaust step. That is, the carbon-containing film formation cycle (CY) according to the second example embodiment can further include'source gas spouting step - third plasma formation step - preliminary exhaust step - first plasma formation step - second plasma formation step - secondary exhaust step'. In this case, in the carbon-containing film formation cycle (CY), at least one of the preliminary exhaust step and the secondary exhaust step can be omitted. Further, the carbon-containing film formation cycle (CY) as described above can be performed n times (n: 1, 2, 3,...). That is, the step of forming a carbon-containing film can include one (n = 1) or more than two (n ≥ 2) carbon-containing film formation cycles (CY). Here, more than two can mean multiple times.

[0081] On the other hand, the silicon-containing source gas can contain impurities in addition to silicon (Si), and thus the silicon-containing film can contain impurities. Further, the quality of the carbon-containing film 20 can be degraded by the impurities contained in the silicon-containing film.

[0082] Therefore, in the example embodiment, after the silicon-containing film 21 is formed on the substrate 10 by spouting the silicon-containing gas, a third plasma is formed to remove the impurities from the silicon-containing film 21. Since the third plasma is formed using a hydrogen-containing gas, the third plasma can be a hydrogen plasma.

[0083] The third plasma can be formed by spouting a gas containing one of a hydrogen-containing gas, an argon gas, and a helium gas, or a combination thereof, and applying a radio frequency power to the chamber.

[0084] In a case where the third plasma is formed after the silicon-containing film 21 is formed, the silicon-containing film 21 is exposed to the third plasma. In this case, the silicon-containing film 21 reacts with the third plasma, and thus the impurities can be separated or removed from the silicon-containing film 21. Therefore, the quality of the carbon-containing film 20 can be improved.

[0085] The substrate processing apparatus that forms the carbon-containing film 20 is not limited to the first substrate processing apparatus shown in Figure 3 The second substrate processing apparatus shown in Figures 5 to 10 may be used to form the carbon-containing film 20 when the carbon-containing film 20 is formed.

[0086] Figure 5 is a schematic view of a second substrate processing apparatus that can form a carbon-containing film according to example embodiments of the present disclosure. Figure 6 is a schematic view of a substrate support portion in the second substrate processing apparatus.Figure 7 is a plan view of a substrate support portion in the second substrate processing apparatus. Figure 8 is a side cross-sectional view of a spraying portion in the second substrate processing apparatus. Figure 9 is a plan view of a spraying portion in the second substrate processing apparatus.

[0087] The following description Figures 5 to 9 A second substrate processing apparatus that can form a carbon-containing film will be described. In this case, a second substrate processing apparatus that forms a carbon-containing film according to the method of the first exemplary embodiment will be described as an example.

[0088] Referring to Figure 5 , the second substrate processing apparatus 1 can perform a process on the substrate 10. The substrate 10 can be a silicon substrate, a glass substrate, a metal substrate, or the like. The second substrate processing apparatus 1 can perform a deposition process of depositing a thin film on the substrate 10. Of course, the second substrate processing apparatus 1 can also perform an etching process of removing a portion of a thin film deposited on the substrate 10.

[0089] The second substrate processing apparatus 1 can include a chamber 2, a substrate support portion 3, a spraying portion 4, a gas storage unit 40a, and a power supply unit 40b. In addition, although not shown in the drawings, a heater capable of adjusting the temperature of at least one of the chamber 2 and the substrate support portion 3 can be provided in at least one of the chamber 2 and the substrate support portion 3.

[0090] Referring to Figure 5 , the chamber 2 can provide a processing space SP. In the processing space SP, the substrate 10 can undergo a process. Thus, the processing space SP can be referred to as a 'process space'. The processing space SP can be disposed in the interior of the chamber 2. An exhaust port (not shown in the drawings) that exhausts gas from the processing space SP can be coupled to the chamber 2. The substrate support portion 3 and the spraying portion 4 can be disposed in the interior of the chamber 2.

[0091] Referring to Figures 5 to 7 , the substrate support portion 3 supports the substrate 10. The substrate support portion 3 can support a plurality of substrates 10. Thus, the second substrate processing apparatus 1 can perform a process on a plurality of substrates 10 at a time. The substrate support portion 3 can be coupled to the chamber 2. The substrate support portion 3 can be disposed in the interior of the chamber 2.

[0092] The substrate support portion 3 can include a support surface 31. The support surface 31 can be a surface of the substrate support portion 3 disposed to face the spraying portion 4. In the case where the substrate support portion 3 is disposed at the lower side of the spraying portion 4, the support surface 31 can correspond to the top surface of the substrate support portion 3. The substrate 10 can be supported on the support surface 31.

[0093] The substrate support portion 3 can support the substrates 10 in an outer region 33 provided outside the central region 32. The outer region 33 can be provided to surround the central region 32. Thus, the central region 32 can be provided inside the outer region 33. In the case where the central region 32 is formed in a circular shape, the outer region 33 can be formed in a circular ring shape surrounding the central region 32. These substrates 10 can be provided apart from each other along the outer region 33. In this case, these substrates 10 can be supported on the support surface 31 so that in the outer region 33, these substrates 10 are provided apart from each other at the same angle with the center axis 30 of the substrate support portion 3 as the center. In the case where the above-mentioned process is performed while rotating the substrate support portion 3, the substrate support portion 3 is rotated with the center axis 30 as the center. In the case where the support surface 31 is formed in a circular shape, the center axis 30 can correspond to the center on the support surface 31. On the other hand, since the substrates 10 are supported on the support surface 31 in the outer region 33, the substrates 10 are not located in the central region 32. In the case where the central region 32 is formed in a circular shape, the diameter of the central region 32 can be implemented to be larger than the diameter D of the substrate 10 as shown in FIG. 1 and be smaller than twice the diameter D of the substrate 10. The diameter of the central region 32 can be implemented to be smaller than the diameter D of the substrate 10. Figure 7

[0094] The gas storage unit 40a stores a gas and supplies the gas to the spouting portion 4. That is, the gas storage unit 40a stores a gas used to form the carbon-containing film 20 according to the example embodiment of the present disclosure, and then supplies it to the spouting portion 4.

[0095] Although Figure 5 Although one gas storage unit 40a is illustrated in FIG. 1, a plurality of gas storage units can be provided. That is, the gas storage unit 40a can include a gas storage unit storing a silicon-containing gas and a gas storage unit storing a carbon-containing gas. Further, the gas storage unit 40a can include a gas storage unit storing a plasma-forming gas. Further, the plasma-forming gas can be one or a combination of a hydrogen-containing gas, argon, and helium. Thus, the gas storage unit 40a can include one or a combination of a gas storage unit storing a hydrogen-containing gas, a gas storage unit storing argon, and a gas storage unit storing helium.

[0096] Referring to Figures 5 to 8 , the spouting portion 4 spouts a gas toward the substrate support portion 3. The spouting portion 4 can spout a gas toward the support surface 31. The spouting portion 4 can be connected to the gas storage unit 40a. In this case, the spouting portion 4 spouts a gas supplied from the gas storage unit 40a toward the substrate support portion 3. That is, the spouting portion 4 spouts a silicon-containing gas and a carbon-containing gas supplied from the gas storage unit 40a, and spouts a gas containing one or a combination of a hydrogen-containing gas, argon, and helium toward the substrate support portion 3.

[0097] ​The spray section 4 can be disposed in the inside of the chamber 2. The spray section 4 can be disposed opposite to the substrate support section 3. The spray section 4 can be disposed on the upper side of the substrate support section 3. A processing space SP can be disposed between the spray section 4 and the substrate support section 3. The spray section 4 can be coupled to a lid (not shown in the figure). The lid can be coupled to the chamber 2 to cover the upper portion of the chamber 2.

[0098] The spray section 4 can spray gas only to the outer region 33. In this case, the spray section 4 is implemented to not spray gas to the center region 32. That is, the spray section 4 can spray gas to the outer region 33 except for the center region 32. Therefore, the second substrate processing apparatus 1 can be implemented to not spray gas to the portion (i.e., the center region 32) of the support surface 31 not having the substrate 10, but to spray gas only to the portion (i.e., the outer region 33) of the support surface 31 having the substrate 10.

[0099] Therefore, the second substrate processing apparatus 1 can reduce the flow rate of gas flowing to the center region 32 not having the substrate 10 and thus not participating in the above-mentioned process, and thus the second substrate processing apparatus 1 can contribute to reducing the manufacturing cost of the substrate 10 having undergone the above-mentioned process by reducing the flow rate of wasted gas.

[0100] Further, since the second substrate processing apparatus 1 is implemented to concentrate the spraying of gas to the outer region 33 having the substrate 10, the flow rate of gas flowing to the outer region 33 having the substrate 10 and thus participating in the above-mentioned process can be improved. Therefore, the second substrate processing apparatus 1 can improve the quality of the substrate 10 having undergone the above-mentioned process.

[0101] The spray section 4 can spray the same gas to all of the outer regions 33. In the case where a plurality of gases is used for the above-mentioned process, the spray section 4 can sequentially repeat the spraying of the same gas to all of the outer regions 33, thereby enabling the above-mentioned process. In this case, the spray section 4 can perform the above-mentioned process according to a time-divided deposition (TSD) method in which a plurality of gases is sprayed in a time-divided manner. For example, in the case where a silicon-containing gas, a carbon-containing gas, or a hydrogen-containing gas is used for the above-mentioned process, the spray section 4 sprays the silicon-containing gas to all of the outer regions 33, and then can spray the carbon-containing gas and the hydrogen-containing gas to all of the outer regions 33 in a state where the spraying of the silicon-containing gas is stopped. Thereafter, the spray section 4 can spray the hydrogen-containing gas to all of the outer regions 33 in a state where the spraying of the carbon-containing gas is stopped.

[0102] The spray section 4 can spray gas only to the outer region 33 having a width H (shown in FIG. 2) equal to or greater than the diameter D of the substrate 10. In this case, the spray section 4 is implemented to not spray gas to the center region 32 not having the substrate 10, but to spray gas only to the outer region 33 having the substrate 10. Figure 7Gas is sprayed onto the outer region 33 of the substrate 10. In this case, the width H of the outer region 33 can be made equal to or longer than the diameter D of the substrate 10. Therefore, for all substrates 10 provided in the outer region 33, the second substrate processing apparatus 1 is configured to spray gas onto the entire surface of the side of the substrate 10 facing the spraying section 4. Therefore, the second substrate processing apparatus 1 can improve the uniformity of the process for each substrate 10. On the other hand, the width H of the outer region 33 can represent the length of the portion belonging to the outer region 33 on a virtual line passing through the central axis 30 of the substrate support section 3.

[0103] The spraying unit 4 can be connected to the power supply unit 40b. The power supply unit 40b can apply plasma power to the spraying unit 4. For example, the plasma power can be radio frequency power. Using the plasma power supplied from the power supply unit 40b, the spraying unit 4 can generate plasma to spray the activated gas only to the external region 33. Therefore, the second substrate processing apparatus 1 uses plasma to crystallize, densify, remove impurities, and similar processes on the thin films deposited on each substrate 10, thereby improving the quality of the substrate 10 that has undergone the above-described processes. When the plasma is generated in the processing space SP, the plasma can be generated only in the portion of the processing space SP corresponding to the external region 33. When the plasma is generated inside the spraying unit 4, the plasma can be generated only in the portion of the spraying unit 4 corresponding to the external region 33.

[0104] After spraying silicon-containing gas only to all external regions 33, the spraying unit 4 can spray carbon-containing gas and plasma-forming gas only to external regions 33, and then spray plasma-forming gas only to external regions 33. In this case, the second substrate processing apparatus 1 can be configured to form a thin film on the substrate 10 according to the atomic layer deposition (ALD) method. The spraying unit 4 can spray gas onto the entire surface of the support surface 31 belonging to the external region 33.

[0105] Therefore, the second substrate processing apparatus 1 can be configured to form a carbon-containing film on all substrates 10 in the outer region 33 after the source material contained in the silicon-containing gas has been adsorbed onto all substrates 10 disposed in the outer region 33, by using a reaction of a carbon-containing gas and a plasma-forming gas. Furthermore, by spraying the plasma-forming gas onto the substrates 10 disposed in the outer region 33 to form plasma, impurities can be removed from the carbon-containing film. Therefore, the second substrate processing apparatus 1 can reduce the processing time until the processing of all substrates 10 disposed in the outer region 33 is completed, thereby improving the productivity of the substrates 10 that have undergone the aforementioned processing. In addition, the second substrate processing apparatus 1 can reduce the deviation of process conditions between substrates 10 disposed in the outer region 33, thereby improving the uniformity of quality among the substrates 10 that have undergone the processing.

[0106] Here, the plasma forming gas can be a gas including one of a hydrogen-containing gas, argon, and helium, or a combination thereof.

[0107] The spraying section 4 can further spray a blow-off gas. To this end, the gas storage unit 40a can further include a gas storage unit storing a blow-off gas. Further, the spraying section 4 can spray a silicon-containing gas, a carbon-containing gas, and a plasma forming gas only to the outer region 33. The blow-off gas sprayed between the silicon-containing gas spraying step and the carbon-containing gas spraying step can blow off the silicon-containing gas remaining in the processing space SP (first blow-off). Further, the blow-off gas sprayed after the carbon-containing gas spraying step can blow off the carbon-containing gas and the plasma forming gas remaining in the processing space SP (second blow-off). The blow-off gas is not involved in the above-described process, and for example, an inert gas such as argon (Ar) can be used. By using the first blow-off gas and the second blow-off gas, the second substrate processing apparatus 1 can further improve the quality of the thin film formed on the substrate 10 by an atomic layer deposition (ALD) method.

[0108] The spraying section 4 can include a first gas flow path 41 and a second gas flow path 42.

[0109] The first gas flow path 41 is to spray a first gas. One side of the first gas flow path 41 can be connected to the gas storage unit 40a by a pipe, a hose, a gas block, or the like. The other side of the first gas flow path 41 can be communicated to the processing space SP. Thus, the first gas supplied from the gas storage unit 40a flows along the first gas flow path 41, and then can be sprayed into the processing space SP through the first gas flow path 41. The first gas flow path 41 can function as a flow path allowing the first gas to flow, and also can function as a spraying port spraying the first gas into the processing space SP.

[0110] The second gas flow path 42 is to spray a second gas. The second gas and the first gas can be different gases from each other. For example, the first gas passing through the first gas flow path 41 can be a silicon-containing gas (source gas) or a carbon-containing gas, and the second gas passing through the second gas flow path 42 can be a hydrogen-containing gas or an exhaust gas. Of course, there can also be the opposite case, and the types of the gases passing through the first gas flow path 41 and the second gas flow path 42 can vary in various ways. One side of the second gas flow path 42 can be connected to the gas storage unit 40a by a pipe, a hose, a gas block, or the like. The other side of the second gas flow path 42 can be communicated to the processing space SP. Thus, the second gas supplied from the gas storage unit 40a flows along the second gas flow path 42, and then can be sprayed into the processing space SP through the second gas flow path 42. The second gas flow path 42 can function as a flow path allowing the second gas to flow, and also can function as a spraying port spraying the second gas into the processing space SP.

[0111] The second gas flow path 42 and the first gas flow path 41 can be disposed to be spatially separated from each other. Accordingly, the second gas supplied from the gas storage unit 40a to the second gas flow path 42 can be sprayed into the processing space SP without passing through the first gas flow path 41. The first gas supplied from the gas storage unit 40a to the first gas flow path 41 can be sprayed into the processing space SP without passing through the second gas flow path 42. In this case, the second gas flow path 42 can spray the second gas only to the outer region 33. The first gas flow path 41 can spray the first gas only to the outer region 33.

[0112] Referring to Figure 8 The spray part 4 can include a first electrode 43 and a second electrode 44. The first electrode 43 can be disposed on an upper side of the substrate support part 3 to face the substrate support part 3. In the case of being grounded, the first electrode 43 can function as a ground electrode. The first electrode 43 can include the first gas flow path 41 and the second gas flow path 42. Accordingly, the first electrode 43 can spray the first gas through the first gas flow path 41 and can spray the second gas through the second gas flow path 42. The first gas flow path 41 and the second gas flow path 42 can be disposed to be spatially separated from each other in the inside of the first electrode 43.

[0113] The first gas flow path 41 can include a first connection hole 411 connected to the gas storage unit 40a and a plurality of first spray holes 412 connected to the first connection hole 411. The first connection hole 411 and the first spray holes 412 can be formed in the inside of the first electrode 43. One side of the first spray holes 412 can be communicated to the first connection hole 411 and the other side thereof can be communicated to the processing space SP. Accordingly, the first gas discharged from the gas storage unit 40a can flow along the first connection hole 411 and then can be sprayed into the processing space SP through the first spray holes 412.

[0114] The second gas flow path 42 can include a second connection hole 421 connected to the gas storage unit 40a and a plurality of second spray holes 422 connected to the second connection hole 421. The second connection hole 421 and the second spray holes 422 can be formed in the inside of the first electrode 43. One side of the second spray holes 422 can be communicated to the second connection hole 421 and the other side thereof can be communicated to the processing space SP. Accordingly, the second gas discharged from the gas storage unit 40a can flow along the second connection hole 421 and then can be sprayed into the processing space SP through the second spray holes 422. That is, the second spray holes 422 of the second gas flow path 42 formed in the first electrode 43 spray the gas into the upper portion of the second electrode 44.

[0115] The first electrode 43 can include a base electrode 43a extending in a direction in which the substrate support portion 3 extends, and a protruding electrode 43b extending downward from a lower surface of the base electrode 43a to protrude. The protruding electrode 43b can have an outer shape extending from the lower surface of the base electrode 43a in a direction in which the substrate support portion 3 is disposed. A plurality of protruding electrodes 43b can be provided, which can be disposed apart from each other.

[0116] In a case where the first electrode 43 includes the base electrode 43a and the protruding electrode 43b, the first connection hole 411, the second connection hole 421, and the second spouting hole 422 can each be provided in the base electrode 43a. In this case, for example, the first connection hole 411 and the second connection hole 421 can have an outer shape extending in a direction in which the base electrode 43a extends. Further, the second spouting hole 422 extends in a vertical direction, one end of which can be connected to the second connection hole 421 and the other end of which can be communicated to the processing space SP. Further, the first spouting hole 412 of the first gas flow path 41 can be provided to extend from the base electrode 43a to the protruding electrode 43b. That is, the first spouting hole 412 can be provided to penetrate the protruding electrode 43b in a vertical direction, one end of which in the extending direction can be connected to the first connection hole 411 and the other end of which in the extending direction can be communicated to the processing space SP. In other words, the first spouting hole 412 of the first gas flow path 41 is formed in the inside of the protruding electrode 43b. Since the first connection hole 411 is provided in the base electrode 43a, the first spouting hole 412 can penetrate a portion of the base electrode 43a in a vertical direction, thereby being connected to the first connection hole 411.

[0117] The second electrode 44 can include a hole 44a provided so that the protruding electrode 43b can be inserted therein. The hole 44a can be formed to penetrate the second electrode 44. Such a hole 44a can function as a flow path for gas discharged from the first electrode 43 to pass through. The hole 44a can be formed to have a number of holes equal to the number of the protruding electrodes 43b, the holes 44a can be formed at positions facing the protruding electrodes 43b. Further, the protruding electrodes 43b can be inserted into each of the holes 44a. That is, the protruding electrode 43b penetrates the hole 44a formed in the second electrode 44. The inner diameter (or width) of the hole 44a can be greater than the diameter (or width) of the protruding electrode 43b, and the length of the hole 44a in the vertical direction can be less than the length of the protruding electrode 43b in the vertical direction.

[0118] In a case where the hole 44a formed in the second electrode 44 is inserted, the protruding electrode 43b of the first electrode 43 is inserted such that the height of the lower surface of the protruding electrode 43b and the height of the lower surface of the second electrode 44 are the same. Therefore, the lower surface of the base electrode 43a and the upper surface of the second electrode 44 are apart from each other, and the spacing space is communicated to the second spouting hole 422. That is, the second electrode 44 is disposed separately at the lower portion of the first electrode 43.

[0119] Further, in a case where the protruding electrode 43b of the first electrode 43 is inserted into the hole 44a of the second electrode 44, the insertion is such that the outer surface of the protruding electrode 43b is spaced apart from the inner surface of the second electrode 44 surrounding the hole 44a. Thus, in the hole 44a, the outer surface of the protruding electrode 43b is communicated to the interval space between the lower surface of the base electrode 43a and the upper surface of the second electrode 44. Further, in the hole 44a, the outer space of the protruding electrode 43b is communicated to the processing space SP. Thus, the gas discharged from the second spouting hole 422 can pass through the hole 44a provided in the second electrode 44, thereby being spouted toward the substrate support portion 3. That is, after passing through the interval space between the lower surface of the base electrode 43a and the upper surface of the second electrode 44, the second gas discharged from the second spouting hole 422 can pass through the hole 44a provided in the second electrode 44, thereby being spouted to the lower side of the hole 44a. In this case, in a case where the second gas passes through the hole 44a, it passes along the outer space of the protruding electrode 43b.

[0120] An insulating member (not shown in the drawing) to partially insulate can be provided between the second electrode 44 and the first electrode 43. A radio frequency power can be applied to the second electrode 44. In a case where the first electrode 43 is grounded and the radio frequency power is applied to the second electrode 44, a plasma can be generated. That is, the plasma can be generated in the space between the first electrode 43 and the second electrode 44. More specifically, the plasma can be generated in the interval space between the lower surface of the base electrode 43a and the upper surface of the second electrode 44 and in the hole 44a. Further, the plasma formed in this way can be used to activate the gas, and the activated gas can be spouted into the processing space SP.

[0121] In the above, the case where the first electrode 43 is grounded and the radio frequency power is applied to the second electrode 44 to form a plasma has been described. However, the description is not limited to this, and a plasma can be formed by applying a radio frequency power to the first electrode 43 and grounding the second electrode 44. Further, a plasma can be formed by applying a positive (+) voltage to one of the first electrode 43 and the second electrode 44 and connecting a negative (-) electrode to the other electrode.

[0122] The spouting portion 4 spouts the gas toward the substrate support portion 3. In this case, the spouting portion 4 can be provided to spout the gas only toward the outer region 33 on the support surface 31 of the substrate support portion 3. In this case, the spouting portion 4 is provided not to spout the gas toward the central region 32 of the substrate support portion 3. The spouting portion 4 can be provided not to spout the gas toward the central region 32 of the support surface 31 on which the substrate 10 is not supported, but to spout the gas only toward the outer region 33 of the support surface 31 on which the substrate 10 is supported.

[0123] To this end, asFigure 9 As shown, the first spray holes 412 and the holes 44a can be provided only in the region facing the outer region 33 of the substrate support portion 3. That is, in the case where the protruding electrode 43b is connected to the lower surface of the base electrode 43a, the protruding electrode 43b can be connected only in the region facing the outer region 33 of the substrate support portion 3 in the lower surface of the base electrode 43a. Further, since the first spray holes 412 are provided to penetrate the protruding electrode 43b in the vertical direction, the first spray holes 412 are formed only in the region facing the outer region of the substrate support portion 3. Further, in the case where a plurality of holes 44a are formed in the second electrode 44, these holes 44a are formed only in the region facing the outer region 33 of the substrate support portion 3 and in the region where the protruding electrode 43b can be inserted. Therefore, the plurality of holes 44a are formed only in the outer region 33 of the substrate support portion 3. Therefore, the first gas through the first spray holes 412 and the second gas or plasma through the holes 44a can be sprayed only into the outer region of the substrate support portion 3.

[0124] Therefore, the second substrate processing apparatus 1 can reduce the flow rate of the gas that flows to the central region 32 of the substrate 10 not having a supported substrate 10 and is wasted without participating in the above-described process. Therefore, the second substrate processing apparatus 1 can reduce the operating cost by reducing the flow rate of the wasted gas. Further, the manufacturing cost of the carbon-containing film 20 can be reduced.

[0125] Further, since the second substrate processing apparatus 1 concentrates the spraying of the gas to the outer region 33 of the substrate 10 having a supported substrate 10, the flow rate of the gas that flows to the outer region 33 of the substrate 10 having a supported substrate 10 and participates in the above-described process can be improved. Therefore, the second substrate processing apparatus 1 can improve the yield.

[0126] Figure 10 is a plan view of a variation example of the spray portion in the second substrate processing apparatus.

[0127] In the above, the case where the spray portion 4 is provided to spray the gas only to the outer region of the substrate support portion 3 has been described. However, the description is not limited thereto, and the spray portion 4 can be provided to spray the gas to both the central region 32 and the outer region 33 of the substrate support portion 3. That is, the spray portion 4 can be provided to spray the gas to the entire support surface 31 of the substrate support portion 3. To this end, as shown in Figure 10 the first spray holes 412 can be provided to face both the central region 32 and the outer region 33 of the substrate support portion 3, and the holes 44a can be provided to face both the central region 32 and the outer region 33 of the substrate support portion 3.

[0128] Further, in the above, as shown in Figure 6 and Figure 7As shown, a case has been described in which the substrates 10 are reliably disposed on the outer regions 33 of the substrate support portion 3 but the substrates 10 are not reliably disposed in the central region 32. However, the description is not limited thereto, and the substrate support portion 3 can be provided so that the substrates 10 are reliably disposed in both the outer regions 33 and the central region 32. Furthermore, in the above, a case has been described in which a plurality of substrates 10 are supported on the substrate support portion 3, however, the present disclosure is not limited thereto, and one substrate 10 can be supported.

[0129] Figure 11 is a flowchart schematically illustrating a method of forming a carbon-containing film according to an exemplary embodiment of the present disclosure by using a second substrate processing apparatus.

[0130] A method of forming an amorphous carbon-containing film 20 according to the method of the first exemplary embodiment by using the second substrate processing apparatus 1 will be described below with reference to Figure 2 , Figures 5 to 9 and Figure 11 In this case, a case in which a plurality of substrates 10 are supported on the support surface 31 of the substrate support portion 3 in the outer regions 33 and the gas spraying portion 4 sprays gas only to the outer regions 33 on the support surface 31 of the substrate support portion 3 will be described as an example.

[0131] First, the substrates 10 are loaded into the interior of the chamber 2, and then the substrates 10 are reliably disposed (step S10). This step S10 can be accomplished by carefully disposing a plurality of substrates 10 on the substrate support portion 3. The substrates 10 can be reliably disposed in the outer regions 33 on the support surface 31 of the substrate support portion 3. In this case, the substrates 10 are not reliably disposed in the central region 32 on the support surface 31 of the substrate support portion 3. A conveyance robot (not shown in the figure) to convey the substrates 10 reliably disposes the substrates 10 on the substrate support portion 3, so that the step S10 of carefully disposing the substrates can be accomplished.

[0132] Next, the temperature of the substrates 10 is adjusted to about 200°C to about 1200°C. In this case, the temperature of the substrates 10 can be adjusted using a heater connected to at least one of the substrate support portion 3 and the chamber 2.

[0133] Next, a process is performed (step S20). This step S20 can be accomplished by spraying gas only to the outer regions 33 and then performing a process on the substrates 10 disposed in the outer regions 33. In this case, the gas spraying portion 4 sprays gas only to the outer regions 33 but not to the central region 32, so that the substrates 10 can be processed.

[0134] Therefore, the flow rate of the gas that flows to the center region 32 of the substrate 10 that does not participate in the process and is wasted can be reduced. Therefore, the manufacturing cost of the substrate 10 that has undergone the process described above can be reduced by reducing the flow rate of the wasted gas, which contributes to reducing the manufacturing cost of the substrate 10 that has undergone the process described above. Furthermore, since the embodiment is performed to spray the gas toward the outer region 33 in which the substrate 10 is disposed, the flow rate of the gas that flows to the outer region 33 of the substrate 10 that participates in the process described above can be increased. Therefore, the quality of the substrate 10 that has undergone the process described above can be improved.

[0135] Here, the width H of the outer region 33 can be implemented to be equal to the diameter of the substrate 10, or longer than the diameter of the substrate 10. Therefore, in the step S20 of performing the process described above, the gas can be sprayed only to the outer region 33 having a width H that is greater than or equal to the diameter D of the substrate 10. Therefore, for all of the substrates 10 disposed in the outer region 33, the embodiment can be implemented to spray the gas to the entire surface of the side of the substrate 10 that faces the spraying portion 4. Therefore, the uniformity of the process for each of the substrates 10 can be improved.

[0136] The step S20 of performing the process can include a step S21 of spraying a silicon-containing gas (hereinafter referred to as a source gas), a step S22 of spraying a carbon-containing gas and a hydrogen-containing gas to form a first plasma (hydrogen plasma), and a step S23 of spraying a hydrogen-containing gas to form a second plasma (hydrogen plasma).

[0137] The step S21 of spraying the source gas is completed by spraying the source gas containing silicon onto the substrate 10 disposed in the outer region 33. This step S21 can be completed by spraying the source gas only to the outer region 33 and then adsorbing the source material on the substrate 10. The spraying portion 4 sprays the source gas only to the outer region 33, so that the step S21 of spraying the source gas can be completed. In order to spray the source gas, the gas storage unit 40a is used to supply the source gas to the first connection hole 411 of the spraying portion 4. Therefore, the source gas supplied to the first connection hole 411 is sprayed through the first spray hole 412 formed in the protruding electrode 43b and then to the substrate support portion 3. In this case, the source gas can be sprayed only to the outer region 33. The step S21 of spraying the source gas can be completed by spraying the source gas not only through the first spray hole 412 but also through the hole 44a. In this case, the spraying portion 4 can spray the source gas through both the first gas flow path 41 and the second gas flow path 42. When the source gas is sprayed to the substrate support portion 3 by the spraying portion 4, the source gas is adsorbed or deposited on the substrate 10 to form a silicon-containing film 21 on the substrate 10, as shown in (a) of FIG. 2. That is, an atomic layer or a monolayer thin film containing silicon is formed. Figure 2

[0138] ​The step S22 of spraying the carbon-containing gas can be accomplished by spraying the carbon-containing gas onto the substrate 10 disposed in the outer region 33. To spray the carbon-containing gas, the carbon-containing gas is supplied to the first connection hole 411 of the spraying portion 4 using the gas storage unit 40a. Accordingly, the carbon-containing gas supplied to the first connection hole 411 passes through the first spraying hole 412 formed in the protruding electrode 43b, and is then sprayed toward the substrate support portion 3. In this case, the carbon-containing gas can be sprayed only toward the outer region 33.

[0139] As described above, the plasma formation gas is sprayed while the carbon-containing gas is sprayed through the spraying portion 4, thereby forming a first plasma (hydrogen plasma). In this case, for example, a hydrogen-containing gas can be used as the plasma formation gas. To this end, the hydrogen-containing gas is supplied to the second connection hole 421 of the spraying portion 4 using the gas storage unit 40a. Accordingly, the hydrogen-containing gas supplied to the second connection hole 421 passes through the second spraying hole 422, and then flows into the gap space between the base electrode 43a and the second electrode 44. That is, the hydrogen-containing gas flows into the gap space between the upper surfaces of the base electrode 43a and the second electrode 44 and the hole 44a. In other words, the hydrogen-containing gas flows into and through the space between the first electrode 43 and the second electrode 44. Then, the first radio frequency power is applied to the second electrode 44.

[0140] When the first radio frequency power is applied to the second electrode 44, the first radio frequency power can be adjusted to be about 600 Watt to about 1000 Watt based on the substrate having a diameter, a width, or a length of about 300 mm. As a more specific example, the first radio frequency power can be adjusted to be about 600 Watt to about 800 Watt, about 700 Watt to about 900 Watt, or about 800 Watt to about 1000 Watt. When the first radio frequency power applied to the second electrode 44 is adjusted by another method, it can be adjusted to be about 8.5 mmW / mm 2 to about 14.1 mmW / mm 2 of the substrate per unit area. As a more specific example, the first radio frequency power applied per unit area of the substrate can be adjusted to be about 8.5 mmW / mm 2 to about 10.1 mmW / mm 2 , to be about 9.9 mmW / mm 2 to about 12.7 mmW / mm 2 , or to be about 10.0 mmW / mm 2 to about 14.1 mmW / mm 2 .

[0141] In a case where the first radio frequency power is applied to the second electrode 44, gas discharged through the space between the first electrode 43 and the second electrode 44 is caused to form a plasma. That is, hydrogen-containing gas discharged through the gap space between the base electrode 43a and the upper surface of the second electrode 44 and the hole 44a is caused to form a first plasma.

[0142] The first plasma can be sprayed toward the substrate support portion 3 through the hole 44a. Further, the carbon-containing gas sprayed toward the substrate support portion 3 through the first spray hole 412 can be activated by the first plasma. In a case where the carbon-containing gas is sprayed toward the substrate support portion 3, carbon (C) can be deposited on the silicon-containing film 21. Further, since the first plasma is formed while the carbon-containing gas is sprayed, the content of carbon (C) deposited or bonded on the silicon-containing film 21 can be increased. That is, when the carbon-containing (C) gas is activated by the first plasma formed using the hydrogen-containing gas, deposition or bonding of carbon (C) on the silicon-containing film 21 can be promoted. Thus, a carbon-containing film 20 having a large amount of carbon (C) can be formed. That is, an amorphous carbon-containing film having a large amount of carbon (C) can be formed. Further, by adjusting the temperature of the substrate to about 200°C to about 1200°C and forming the first plasma (hydrogen plasma), silicon (Si) contained in the carbon-containing film 20 can be sublimated and thus removed.

[0143] In the above, a case where the first plasma is formed using the hydrogen-containing gas has been described. However, a gas other than the hydrogen-containing gas can be used in forming the first plasma. That is, the first plasma can be formed by spraying the carbon-containing gas while spraying one or a combination of the hydrogen-containing gas, helium gas, and helium gas, or a gas containing a combination thereof. In other words, the first plasma can be formed by spraying at least one of the hydrogen-containing gas, helium gas, and helium gas and the carbon-containing gas.

[0144] Next, a plasma formation gas is sprayed to form a second plasma (step S23). In this case, for example, a hydrogen-containing gas is sprayed to form the second plasma. To this end, the hydrogen-containing gas is supplied to the second connection hole 421 of the spray portion 4 by using the gas storage unit 40a. Thus, the hydrogen-containing gas supplied to the second connection hole 421 passes through the second spray hole 422 and then flows into the gap space between the base electrode 43a and the second electrode 44. That is, the hydrogen-containing gas flows into the gap space between the base electrode 43a and the upper surface of the second electrode 44 and the hole 44a. While the hydrogen-containing gas passes through the space between the first electrode 43 and the second electrode 44, a second radio frequency power is applied to the second electrode 44.

[0145] The second radio frequency power can be adjusted to be about 50 Watt to about 300 Watt based on a substrate having a diameter, width, or length of about 300 mm when the second radio frequency power is applied to the second electrode 44. As a more specific example, the second radio frequency power can be adjusted to be about 50 Watt to about 100 Watt, about 80 Watt to about 200 Watt, or about 100 Watt to about 300 Watt. When the second radio frequency power applied to the second electrode 44 is adjusted by another method, it can be adjusted to be about 0.7 mmW / mm 2 to about 4.2 mmW / mm 2 of the substrate. As a more specific example, the second radio frequency power applied per unit area of the substrate can be adjusted to be about 0.7 mmW / mm 2 to about 1.4 mmW / mm 2 , to be about 1.1 mmW / mm 2 to about 2.8 mmW / mm 2 , or to be about 1.4 mmW / mm 2 to about 4.2 mmW / mm 2 .

[0146] The gas discharged through the space between the first electrode 43 and the second electrode 44 forms a second plasma (hydrogen plasma) when the second radio frequency power is applied to the second electrode 44.

[0147] In the above, the case where the second plasma is formed by spraying a hydrogen-containing gas has been described. However, a gas other than the hydrogen-containing gas can be used when the second plasma is formed. That is, the second plasma can be formed by spraying one of the hydrogen-containing gas, helium gas, and helium gas or a gas containing a combination thereof together with a carbon-containing gas. In other words, the second plasma can be formed by spraying at least one of the hydrogen-containing gas, argon gas, and helium gas together with the carbon-containing gas.

[0148] The impurities contained in the carbon-containing film 20 can be removed and the carbon-containing film 20 can be densified when the second plasma is formed. That is, the impurities contained in the carbon-containing film 20 can be removed and the carbon-containing film 20 can be densified by forming the second plasma by adjusting the second radio frequency power as described above. Thus, a dense carbon-containing film 20 having a low impurity content or no impurities is formed.

[0149] In the above, the case where the carbon-containing gas and the hydrogen-containing gas are allowed to pass through different gas flow paths from each other when the first plasma is formed by spraying the hydrogen-containing gas has been described. However, the description is not limited to this, and the carbon-containing gas and the hydrogen-containing gas can be allowed to pass through the same flow path. For example, the carbon-containing gas and the hydrogen-containing gas can be allowed to pass through the second gas flow path 42 so as to be sprayed toward the substrate support portion 3. That is, the carbon-containing gas and the hydrogen-containing gas can be allowed to flow into the second connection hole 421, pass through the second spray hole 422 and the hole 44a, and then be sprayed toward the substrate support portion 3.

[0150] In the above, the case where the carbon-containing film 20 is formed by the method according to the first exemplary embodiment using the second substrate processing apparatus 1 has been described. However, the description is not limited to this, and the carbon-containing film can be formed by using the second substrate processing apparatus 1 to form the carbon-containing film according to the method of the second exemplary embodiment shown in Figure 4

[0151] Figure 12 is a schematic view of a third substrate processing apparatus according to an exemplary embodiment of the present disclosure, which can form a carbon-containing film. Figure 13 is a view illustrating an arrangement structure of openings in the third substrate processing apparatus shown in Figure 12 Figure 14 is a view illustrating how a supply port and an opening are formed in a gas spraying device in the third substrate processing apparatus shown in Figure 12

[0152] Referring to Figures 12 to 14 , the third substrate processing apparatus includes a chamber 10000, a substrate support device 20000 provided inside the chamber 10000 and installed in the inside of the chamber 10000 to support a substrate 10 provided in the chamber 10000, a gas spraying device 30000 installed in the inside of the chamber 10000 to spray a gas to the substrate support device 20000, and a power supply device 40000 connected to the gas spraying device 30000 to supply a power to the gas spraying device for generating a plasma in the chamber 10000. Further, the substrate processing apparatus can further include a control device (not shown in the figure) to control the power supply device 40000.

[0153] The chamber 10000 provides a predetermined reaction space and keeps it airtight. The chamber 10000 can include a main body 14000 having a predetermined reaction space and including a substantially circular or quadrangular planar portion and a sidewall portion extending upward from the planar portion, and a cover 12000 substantially in a circular or quadrangular shape and located on the main body 14000 to keep the reaction space airtight. However, the chamber 10000 is not limited to this, and can be manufactured in various shapes corresponding to the outer shape of the substrate 10.

[0154] ​​​An exhaust port (not shown in the drawing) can be formed in a predetermined area of the bottom surface of the chamber 10000, and an exhaust pipe (not shown in the drawing) connected to the exhaust port can be provided outside the chamber 10000. In addition, the exhaust pipe can be connected to an exhaust device (not shown in the drawing). A vacuum pump, such as a turbo molecular pump, can be used as the exhaust device. Thus, by the exhaust device, the inside of the chamber 10000 can be evacuated and suctioned to a predetermined gas pressure of reduced pressure, such as a predetermined pressure of about 0.1 mTorr or less. The exhaust pipe can be installed not only to the bottom surface of the chamber 10000 but also to the side surface of the chamber 10000 on the lower side of the substrate support device 20000 described later. In addition, of course, to reduce the exhaust time, a plurality of exhaust pipes and corresponding exhaust devices can be additionally installed.

[0155] On the other hand, the substrate 10 can be reliably disposed in the substrate support device 20000 in which the substrate 10 is provided in the chamber 10000 so as to perform a substrate processing process, such as a thin film deposition process. For example, the substrate support device 20000 can include an electrostatic chuck so that the substrate 10 can be reliably disposed so as to be adsorbed and fixed by an electrostatic force. In addition, the substrate 10 can also be supported by a vacuum adsorption or a mechanical force.

[0156] The substrate support device 20000 can be provided in an outer shape corresponding to the outer shape of the substrate 10, such as a circular shape or a quadrangular shape. The substrate support device 20000 can include a substrate support 22000 in which the substrate 10 is reliably disposed, and a lifter 24000 disposed in a lower portion of the substrate support 22000 to move the substrate support 22000 up and down. However, the substrate support 22000 can be manufactured to be larger than the substrate 10. The lifter 24000 is provided to support at least one area, such as a central portion, of the substrate support 22000, and it can move the substrate support 22000 closer to the gas spouting device 30000 in a case where the substrate 10 is reliably disposed on the substrate support 22000. In addition, a heater (not shown in the drawing) can be installed in the inside of the substrate support 22000. The heater generates heat at a predetermined temperature to heat the substrate support 22000 and the substrate 10 reliably disposed on the substrate support 22000, thereby allowing a thin film to be uniformly deposited on the substrate 10.

[0157] The gas supply device can be installed on the cover 12000 of the chamber 10000. The gas supply device can be installed to penetrate the cover 12000 of the chamber 10000, and can include a first gas supply unit 11000 and a second gas supply unit 12000 to supply first and second gases to the gas spouting device 30000, respectively. Here, the first gas can include a silicon-containing gas and a carbon-containing gas, and the second gas can include a plasma-forming gas and a purge gas. However, it is not limited thereto, and the first gas can include a plasma-forming gas and a purge gas, and the second gas can include a silicon-containing gas and a carbon-containing gas. That is, the first gas supply unit 11000 and the second gas supply unit 12000 each do not necessarily supply one kind of gas, and each of the first gas supply unit 11000 and the second gas supply unit 12000 is used to supply a plurality of gases or to supply a gas selected from among a plurality of gases. Here, the plasma-forming gas can be a gas including one or a combination of a hydrogen-containing gas, argon, and helium.

[0158] The gas spouting device 30000 is installed in the inside of the chamber 10000, for example, the bottom surface of the cover 12000. A first gas supply path to spout the first gas to be supplied to the substrate and a second gas supply path to spout the second gas to be supplied to the substrate are formed in the inside of the gas spouting device 30000. The first gas supply path and the second gas supply path are provided to be independent and separated from each other, so that the first gas and the second gas can be supplied to the substrate separately so as not to be mixed in the gas spouting device 30000.

[0159] More specifically, the gas spouting device 30000 includes a first plate (an upper frame 31000 and a lower frame 32000) having a first gas supply port 31200 capable of supplying the first gas and a second gas supply port 32200 capable of supplying the second gas, and a second plate 33000 having a plurality of openings 33200, the second plate 33000 being electrically insulated from the first plate (the upper frame 31000 and the lower frame 32000), being spaced apart from the first plate (the upper frame 31000 and the lower frame 32000), and the plurality of openings 33200 being alternately arranged with the first gas supply port 31200 and the second gas supply port 32200. Here, the first gas supply port 31200 is connected to the first gas supply path, and the second gas supply port 32200 is connected to the second gas supply path.

[0160] The first plate (the upper frame 31000 and the lower frame 32000) can operate as a first electrode to generate plasma in a reaction space by supplying a power source to the first plate (the upper frame 31000 and the lower frame 32000) or the second plate 33000 described later. Such a first plate (the upper frame 31000 and the lower frame 32000) can be referred to as a first electrode.

[0161] The first plate (the upper frame 31000 and the lower frame 32000) can include the upper frame 31000 and the lower frame 32000. In this case, the upper frame 31000 is detachably attached to the bottom surface of the cover 12000, and a portion (for example, a central portion) of the top surface is spaced apart from the bottom surface of the cover 12000 by a predetermined distance. Accordingly, the first gas provided from the first gas supply unit 11000 can be diffused in a space between the top surface of the upper frame 31000 and the bottom surface of the cover 12000. Further, the lower frame 32000 is installed to be spaced apart from the bottom surface of the upper frame 31000 by a certain interval. Accordingly, the second gas provided from the second gas supply unit 12000 can be diffused in a space between the top surface of the lower frame 32000 and the bottom surface of the upper frame 31000. The upper frame 31000 and the lower frame 32000 can be integrally formed to be connected along the outer circumferential surface to provide an interval space inside, and thus the upper frame 31000 and the lower frame 32000 can necessarily be configured to have a structure in which the outer circumferential surface is sealed by the first seal 35000. In this case, the first seal 35000 can be formed of an insulating material to electrically insulate the upper frame 31000 and the lower frame 32000 from each other, or conversely, can be formed of a conductor material to electrically connect the upper frame 31000 and the lower frame 32000 to each other.

[0162] The first gas supply path can be formed to diffuse the first gas provided from the first gas supply unit 11000 in a space between the bottom surface of the cover 12000 and the upper frame 31000 and then pass through the upper frame 31000 and the lower frame 32000, thereby being supplied into the inside of the chamber 10000. In this case, the first gas supply port 31200 can be formed to be connected to the first gas supply path, and can be formed to penetrate the upper frame 31000 and the lower frame 32000 in a lower portion of the space between the top surface of the upper frame 31000 and the bottom surface of the cover 12000, such that the first gas supply port 31200 is spaced apart from the space between the top surface of the lower frame 32000 and the bottom surface of the upper frame 31000.

[0163] Further, the second gas supply path can be formed to diffuse the second gas provided from the second gas supply unit 12000 in a space between the bottom surface of the upper frame 31000 and the top surface of the lower frame 32000 and then pass through the lower frame 32000, thereby being supplied into the inside of the chamber 10000. In this case, the second gas supply port 32200 can be formed to be connected to the second gas supply path, and can be formed to penetrate the lower frame 32000 in a lower portion of the space between the bottom surfaces of the upper frame 31000.

[0164] Accordingly, the first gas supply path and the second gas supply path can not be communicated with each other, and the first gas and the second gas can be separately supplied to the lower side of the first plate from the gas supply device through the first plate.

[0165] The second plate 33000 can operate as a second electrode to generate plasma in the reaction space by supplying a power source to the first plate (the upper frame 31000 and the lower frame 32000) or the second plate 33000. Such a second plate 33000 can be referred to as a second electrode.

[0166] The second plate 33000 is insulated from the first plate (the upper frame 31000 and the lower frame 32000) and can be installed to be spaced apart from the lower side of the first plate (the upper frame 31000 and the lower frame 32000). That is, the second plate 33000 is insulated from the lower frame 32000 and can be installed to be spaced apart from the lower side of the lower frame 32000. The second plate 33000 is installed to be spaced apart from the bottom surface of the lower frame 32000 by a certain interval D1. Accordingly, the first gas and the second gas supplied downward by the first plate can be diffused in the space between the top surface of the second plate 33000 and the bottom surface of the lower frame 32000. The lower frame 32000 and the second plate 33000 can be configured to have a structure in which the outer circumferential surface is sealed by the second seal 36000. In this case, the second seal 36000 can be formed of an insulating material to electrically insulate a plurality of lower frames 32000 from each other.

[0167] Here, the second plate 33000 can be installed to be spaced apart from the lower side of the first plate at a distance at which a plasma sheath region that can be formed on the surface of the first plate (i.e., the bottom surface of the lower frame 32000) overlaps a plasma sheath region that can be formed on the surface of the second plate 33000 (i.e., the top surface of the second plate 33000). Here, the plasma sheath region refers to a dark field region in which positive (+) ions are concentrated between plasma and the surface of a structure, so it is difficult to form plasma despite the exchange of energy.

[0168] In the case in which the plasma sheath region that can be formed on the bottom surface of the lower frame 32000 does not overlap the plasma sheath region that can be formed on the top surface of the second plate 33000, plasma can be formed between the plasma sheath regions. However, in the embodiment of the disclosure, the lower frame 32000 and the second plate 33000 are disposed to be spaced apart from each other at a distance at which the plasma sheath region that can be formed on the bottom surface of the lower frame 32000 overlaps the plasma sheath region that can be formed on the top surface of the second plate 33000, which can prevent plasma from being generated between the bottom surface of the lower frame 32000 and the top surface of the second plate 33000.

[0169] On the other hand, as described above, the first gas and the second gas supplied downward through the first plate (the upper frame 31000 and the lower frame 32000) need to diffuse in the space between the bottom surface of the lower frame 32000 and the top surface of the second plate 33000, and thus the bottom surface of the lower frame 32000 and the top surface of the second plate 33000 should be spaced apart from each other with a gap to allow the gases to flow smoothly. Therefore, the second plate 33000 can be disposed to be spaced apart from the first plate by a gap of about 3 mm or less, for example, about 1 mm to about 3 mm. In a case where the second plate 33000 is disposed to be spaced apart from the first plate by a gap of less than about 1 mm, the gases cannot flow smoothly in the space between the bottom surface of the lower frame 32000 and the top surface of the second plate 33000, and in a case where it is disposed to be spaced apart from each other by a gap of more than about 3 mm, plasma is generated in the space between the bottom surface of the lower frame 32000 and the top surface of the second plate 33000, and thus particle formation occurs, which can cause a process defect.

[0170] Further, the second plate 33000 has a plurality of openings 33200 arranged alternately with the first gas supply ports 31200 and the second gas supply ports 32200 as described above. That is, as shown in FIG. 3, in a case where the first plate (the upper frame 31000 and the lower frame 32000) and the second plate 33000 are viewed from the upper portion or the lower portion thereof, the plurality of openings 33200 are formed in the second plate 33000 not to overlap any one of the first gas supply ports 31200 and the second gas supply ports 32200. Figure 12 Further, the plurality of openings 33200 can be formed to be disposed between the first gas supply ports 31200 and the second gas supply ports 32200 at a center position in at least one direction.

[0171] In a case where the openings 33200 are provided to overlap the first gas supply ports 31200 and the second gas supply ports 32200, each gas supplied from the first gas supply ports 31200 and the second gas supply ports 32200 is mostly passed through the openings 33200 provided to overlap the first gas supply ports 31200 and the second gas supply ports 32200 and then sprayed. However, the entire gas can not be sprayed downward through the openings 33200, and a portion of the gas can not be directly sprayed into the openings 33200 but can flow into a space between a bottom surface of the lower frame 32000 and a top surface of the second plate 33000 and then stagnate in the space. The gas stagnated in this manner can disturb the smooth flow of the gas and cause particle formation, and thus in the present disclosure, a plurality of openings 33200 can be formed in the second plate 33000 to be alternately arranged with the first gas supply ports 31200 and the second gas supply ports 32200, respectively.

[0172] As Figure 14 shown, such an opening 33200 can include a first opening 33300 each formed on the first plate (the upper frame 31000 and the lower frame 32000) and a second opening 33500 connected to the first opening 33300 and having a larger diameter than the first opening 33300. That is, each opening 33200 can include the first opening 33300 formed to have a predetermined length H1 from a top surface of the second plate 33000 facing the first plate (the upper frame 31000 and the lower frame 32000), and the second opening 33500 formed to have a predetermined length H2 from a bottom surface of the second plate 33000. In this case, the first opening 33300 serves as a gas inlet, and the gas that has been diffused in a space between a bottom surface of the lower frame 32000 and a top surface of the second plate 33000 flows into the opening 33200 through the first opening 33300. On the other hand, the second opening 33500 serves as a gas outlet, and the gas that has flowed into the opening 33200 is sprayed to a lower side of the second plate 33000 through the second opening 33500. The first openings 33300 are alternately arranged with the first gas supply ports 31200 and the second gas supply ports 32200, and the second openings 33500 can be formed to extend to the first openings 33300 so as to have a larger diameter than the first openings 33300. On the other hand, the second openings 33500 can include a connection portion 33500a formed to have an increased diameter at a connection portion with the first openings 33300.

[0173] The first opening 33300 guides the gas diffused between the bottom surface of the lower frame 32000 and the top surface of the second plate 33000 to the second openings 33500 on the lower side. This first opening 33300 has a diameter D2 selected to uniformly guide the gas diffused between the bottom surface of the lower frame 32000 and the top surface of the second plate 33000 to each of the second openings 33500. In this case, the first opening 33300 can have a diameter D2 that can form a plasma sheath region inside thereof. That is, the entire plasma sheath region that can be formed on the inner surface of the second plate 33000 in which the first opening 33300 is formed overlaps the first opening 33300, and thus a plasma sheath region in which plasma is hardly formed inside can be formed. The first opening 33300 extends from the top surface of the second plate 33000 and can be formed to be shorter in length than the second openings 33500 described later.

[0174] The second openings 33500 are formed to be connected to the lower side of the first opening 33300. The second openings 33500 generate plasma in the inside of the second plate 33000, that is, in the substantially cylindrical space. That is, the second openings 33500 provide a large surface area to facilitate plasma ionization of the gas flowing to the second openings 33500, thereby generating plasma having a high density.

[0175] On the other hand, the second openings 33500 can include a connection portion formed to have an increased diameter at a portion connected to the first opening 33300. The connection portion 33500a serves to smoothly deliver the gas supplied from the upper side of the second openings 33500 through the first opening 33300 to the second openings 33500. This connection portion 33500a can have an outer shape in which the cross section gradually increases from one end connected to the first opening 33300 to the other end. Thus, the gas supplied through the first opening 33300 can be guided through the connection portion 33500a without stagnation, thereby being smoothly delivered to the second openings 33500. However, the connection portion 33500a is not an essential component, and thus the second openings 33500 having a cylindrical outer shape can be directly connected to the lower side of the first opening 33300 in the case where the connection portion 33500a is omitted.

[0176] The diameter D3 of the second openings 33500 can be greater than the diameter D2 of the first openings 33300. In this case, the diameter D3 of the second openings 33500 can be 5 to 20 times the diameter D2 of the first openings 33300. Here, the diameter D3 of the second openings 33500 can represent an average diameter of the second openings 33500. In a case where the diameter D3 of the second openings 33500 is less than 5 times the diameter D2 of the first openings 33300, it is not possible to form a plasma having a high density in the first openings 33300. Further, in a case where the diameter D3 of the second openings 33500 exceeds 20 times the diameter D2 of the first openings 33300, the spacing between the second openings 33500 increases, and thus it is not possible to deposit a uniform thin film. In order to form a plasma having a high density in the second openings 33500, while avoiding unnecessary increases in the spacing between the second openings 33500, the diameter D3 of the second openings 33500 can desirably be 8 to 10 times the diameter D2 of the first openings 33300.

[0177] On the other hand, the second openings 33500 can have a length H2 that is longer than the length H1 of the first openings. For example, the length H2 of the second openings 33500 can be 1.2 to 2 times the length H1 of the first openings. By making the length H2 of the second openings 33500 longer than the length H1 of the first openings, it is not only possible to avoid the generation of a plasma in the first openings 33300, but it is also possible to generate a plasma having a high density in the second openings 33500, and it is possible to prevent the generation of a parasitic plasma in the spacing between the first plate (the upper frame 31000 and the lower frame 32000) and the second plate 33000. Here, in a case where the length H2 of the second openings 33500 is formed to be less than 1.2 times the length H1 of the first openings, it is not possible to achieve a sufficient plasma density. On the other hand, in a case where the length H2 of the second openings 33500 exceeds the length H1 of the first openings, ions generated in the second openings 33500 collide with the inner surface of the second plate 33000 in which the second openings 33500 are formed, and this can cause a hole to be broken due to sputtering. Further, in a case where the length H2 of the second openings 33500 exceeds twice the length H1 of the first openings, it is difficult to remove particles present in the second openings 33500 in an in-situ cleaning process after substrate processing, and thus the thickness of the second plate 33000 undesirably increases. In order to achieve a sufficient plasma density and avoid a hole being broken, the length H2 of the second openings 33500 can desirably be about 1.3 to about 1.5 times the length H1 of the first openings 33300.

[0178] The power supply device 40000 can be connected to the gas spouting device 30000 to supply power to the gas spouting device for generating a plasma in the chamber 10000. That is, the power supply device 40000 can supply radio frequency power for generating a plasma in the chamber 10000.

[0179] Here, the power supply device 40000 is connected to the second plate 33000 to supply radio frequency power to only the second plate 33000, and the first plate can be grounded. In this case, the first plate and the second plate 33000 can be insulated by a second seal member 36000 formed of an insulating material. In this way, in a case where the power supply device 40000 supplies radio frequency power to the second plate 33000 and the first plate is grounded, the first plate and the second plate 33000 each form an electrode to generate a capacitively coupled plasma (CCP). Further, the substrate support 22000 is also grounded, so that a capacitively coupled plasma can be generated between the second plate 33000 and the substrate support 22000. On the other hand, the power supply device 40000 can necessarily supply power to the first plate and the second plate 33000, in which case the power supply device 40000 can be used to supply radio frequency power to each of the first plate and the second plate 33000.

[0180] A method of forming an amorphous carbon-containing film 20 according to the first exemplary embodiment by using a third substrate processing device will be described below with reference to Figure 2 and Figures 12 to 14 A method of forming an amorphous carbon-containing film 20 according to the first exemplary embodiment by using a third substrate processing device will be described below with reference to

[0181] First, the pressure in the inside of the chamber 10000 is adjusted to a high vacuum pressure by using a turbo molecular pump (TMP). For example, the pressure in the inside of the chamber 10000 is adjusted to a pressure of between about 10 mTorr and about 50 mTorr.

[0182] Next, the substrate 10 is loaded in the inside of the chamber 10000 and then can be reliably set on the substrate support 22000. Next, the temperature of the substrate 10 is adjusted to be about 200°C to about 1200°C. In this case, the temperature of the substrate 10 can be adjusted using a heater connected to at least one of the substrate support 22000 and the chamber 10000.

[0183] After that, a silicon-containing gas (i.e., a source gas) is sprayed into the inside of the chamber 10000. To this end, the silicon-containing gas is supplied to the first gas supply port 31200 of the gas spraying device 30000 by using the first gas supply unit 11000. The silicon-containing gas that has flown to the first gas supply port 31200 passes through the first opening 33300 and the second opening 33500 of the second plate 33000, and is then sprayed toward the substrate support 22000. Thus, the silicon-containing gas is adsorbed or deposited on the substrate 10 to form a silicon-containing film 21, as shown in (a) of FIG. 2. That is, an atomic layer or a monolayer thin film containing silicon is formed. Figure 2

[0184] ​Next, a first plasma is formed by spraying a plasma-forming gas into the inside of the chamber 10000 while spraying a carbon-containing gas. More specifically, the carbon-containing gas is supplied to the first gas supply port 31200 of the gas spraying device 30000 by using the first gas supply unit 11000. The carbon-containing gas that has flown to the first gas supply port 31200 passes through the first opening 33300 and the second opening 33500 of the second plate 33000. In addition, the plasma-forming gas is supplied to the second gas supply port 32200 of the gas spraying device 30000 by using the second gas supply unit 12000. The plasma-forming gas that has flown to the second gas supply port 32200 passes through the first opening 33300 and the second opening 33500 of the second plate 33000. Here, the plasma-forming gas can be, for example, a hydrogen-containing gas.

[0185] Next, the first radio frequency power is applied to the second plate 33000 by using the power supply device 40000. Thus, the first plasma can be formed in the second opening 33500 of the second plate 33000.

[0186] When the first radio frequency power is applied to the second plate 33000, the first radio frequency power can be adjusted to be about 600 Watt to about 1000 Watt based on a substrate having a diameter, a width, or a length of about 300 mm. As a more specific example, the first radio frequency power can be adjusted to be about 600 Watt to about 800 Watt, about 700 Watt to about 900 Watt, or about 800 Watt to about 1000 Watt. When the first radio frequency power applied to the second plate 33000 is adjusted by another method, it can be adjusted to be about 8.5 mmW / mm 2 to about 14.1 mmW / mm 2 of the substrate per unit area. As a more specific example, the first radio frequency power applied per unit area of the substrate can be adjusted to be about 8.5 mmW / mm 2 to about 10.1 mmW / mm 2 , to be about 9.9 mmW / mm 2 to about 12.7 mmW / mm 2 , or to be about 10.0 mmW / mm 2 to about 14.1 mmW / mm 2 .

[0187] By adjusting the first radio frequency power in this way to form a plasma, the content of carbon (C) deposited on the silicon-containing film 21 can be increased. In other words, an amorphous carbon-containing film 20 containing a large amount of carbon (C) can be formed.

[0188] When the step of forming the first plasma is completed, the second plasma is formed in the inside of the chamber 10000. For example, while the hydrogen-containing gas is sprayed into the inside of the chamber 10000, the second radio frequency power is applied to the second plate 33000 by using the power supply device 40000. More specifically, the plasma forming gas is supplied to the second gas supply port 32200 of the gas spraying device 30000 by using the second gas supply unit 12000. Thus, the plasma forming gas that has flown to the second gas supply port 32200 passes through the first opening 33300 and the second opening 33500 of the second plate 33000. Then, the second radio frequency power is applied to the second plate 33000 by using the power supply device 40000. Thus, the second plasma, i.e., the hydrogen plasma, can be formed.

[0189] When the second radio frequency power applied to the second plate 33000 is adjusted, the second radio frequency power can be adjusted to be about 50 Watt to about 300 Watt based on the substrate having a diameter, a width, or a length of about 300 mm. As a more specific example, the second radio frequency power can be adjusted to be about 50 Watt to about 100 Watt, about 80 Watt to about 200 Watt, or about 100 Watt to about 300 Watt. When the second radio frequency power applied to the second plate 33000 is adjusted by another method, it can be adjusted to be about 0.7 mmW / mm 2 to about 4.2 mmW / mm 2 of the substrate. As a more specific example, the second radio frequency power applied per unit area of the substrate can be adjusted to be about 0.7 mmW / mm 2 to about 1.4 mmW / mm 2 to about 2.8 mmW / mm 2 , or can be adjusted to be about 1.4 mmW / mm 2 to about 4.2 mmW / mm 2 of the substrate. 2 .

[0190] By forming the second plasma in this way, the amorphous carbon-containing film 20 can be exposed to the hydrogen plasma (the second plasma). When the carbon-containing film 20 is exposed to the second plasma, the impurities contained in the carbon-containing film 20 can be removed, and the carbon-containing film 20 can be densified. That is, by forming the second plasma by adjusting the second radio frequency power in the method as described above, the impurities contained in the carbon-containing film 20 can be removed, and the carbon-containing film can be densified. Thus, the densified and amorphous carbon-containing film 20 having a low impurity content or no impurities is formed.

[0191] In the above, the case where the first plasma and the second plasma (hydrogen plasma) are formed by spattering a hydrogen-containing gas has been described. However, a gas other than the hydrogen-containing gas can be used when the first plasma and the second plasma are formed. That is, the first plasma and the second plasma can be formed by spattering one of a hydrogen-containing gas, helium gas, or helium gas or a gas containing a combination thereof, while spattering a carbon-containing gas. In other words, the first plasma can be formed by spattering at least one of a hydrogen-containing gas, helium gas, and helium gas, and a carbon-containing gas.

[0192] According to the example embodiment of the present disclosure, a carbon-containing film can be easily formed by a deposition method. That is, an amorphous carbon-containing film can be easily formed by a deposition method.

[0193] Further, an amorphous carbon-containing film having an increased carbon content and a reduced impurity content can be formed. Further, an amorphous carbon-containing film having a dense film quality can be formed.

[0194] Industrial applicability According to the example embodiment of the present disclosure, a carbon-containing film can be easily formed by a deposition method. That is, an amorphous carbon-containing film can be easily formed by a deposition method.

[0195] Further, an amorphous carbon-containing film having an increased carbon content and a reduced impurity content can be formed. Further, an amorphous carbon-containing film having a dense film quality can be formed.

Claims

1. A method for forming a carbon-containing film, which is a method for forming an amorphous carbon-containing film on a substrate accommodated in a chamber, the method comprising: spraying a silicon-containing source gas to an inside of the chamber; forming a first plasma by supplying a first radio frequency power to the inside of the chamber while spraying carbon and a plasma-forming gas to the inside of the chamber; and forming a second plasma by supplying a second radio frequency power to the inside of the chamber while spraying the plasma-forming gas to the inside of the chamber, wherein the step of forming the first plasma and the step of forming the second plasma include adjusting the first radio frequency power to be greater than the second radio frequency power.

2. The method for forming a carbon-containing film according to claim 1, further comprising a step of adjusting a temperature of the substrate to be 200°C to 1200°C.

3. The method for forming a carbon-containing film according to claim 1, wherein, the step of forming the first plasma includes adjusting the first radio frequency power to be 800 Watt to 1000 Watt, and the step of forming the second plasma includes adjusting the second radio frequency power to be 100 Watt to 300 Watt.

4. The method for forming a carbon-containing film according to claim 1, wherein, the plasma-forming gas sprayed in the step of forming the first plasma and the step of forming the second plasma includes one or a combination of a hydrogen-containing gas, argon, or helium.

5. The method for forming a carbon-containing film according to claim 1, wherein, the first plasma and the second plasma are plasmas formed in the inside of the chamber.

6. The method for forming a carbon-containing film according to claim 1, wherein, in the step of forming the first plasma and the step of forming the second plasma, the first plasma and the second plasma are formed using a potential difference between a first electrode and a second electrode installed in the inside of the chamber.

7. The method for forming a carbon-containing film according to claim 1, wherein, a time for forming the first plasma is shorter than a time for forming the second plasma.

8. The method for forming a carbon-containing film according to claim 7, wherein the time for forming the first plasma is 2 seconds to 5 seconds, and the time for forming the second plasma is greater than 5 seconds and 7 seconds or less.

9. The method for forming a carbon-containing film according to claim 1, wherein, between the step of spraying the source gas and the step of forming the first plasma by supplying the first radio frequency power to the inside of the chamber while spraying carbon and the plasma-forming gas to the inside of the chamber, either one of the following two is performed: a step of evacuating the chamber; and a step of evacuating the chamber while spraying a purge gas to the inside of the chamber.

10. The method for forming a carbon-containing film according to claim 1, wherein, in the step of spraying carbon and the plasma-forming gas, the plasma-forming gas contains hydrogen, and either a carbon-containing gas and a hydrogen-containing gas separately prepared is sprayed, or a gas containing both carbon and hydrogen is sprayed.

11. The method for forming a carbon-containing film according to any one of claims 1 to 10, between the step of spraying the source gas and the step of forming the first plasma while spraying carbon and the plasma-forming gas, the method further includes a step of forming a third plasma by spraying the plasma-forming gas to the inside of the chamber.

12. A method for forming a carbon-containing film, which is a method for forming an amorphous carbon-containing film on a substrate accommodated in a chamber, wherein, The chamber includes: a first plate including a first gas supply port and a second gas supply port; a second plate having a plurality of openings, the second plate being electrically insulated from and spaced apart from the first plate, and the plurality of openings being arranged alternately with the first gas supply port and the second gas supply port; and a turbomolecular pump, i.e., TMP, the method including: spraying a silicon-containing source gas to an inside of the chamber; forming a first plasma by supplying a first radio frequency power to the inside of the chamber while spraying a carbon and a plasma forming gas to the inside of the chamber; and forming a second plasma by supplying a second radio frequency power to the inside of the chamber while spraying the plasma forming gas to the inside of the chamber, wherein the step of forming the first plasma and the step of forming the second plasma include adjusting the first radio frequency power to be greater than the second radio frequency power.

13. The method of claim 12, further comprising the step of adjusting a temperature of the substrate to be 200 °C to 1200 °C.

14. The method for forming a carbon-containing film according to claim 12, wherein, the step of forming the first plasma includes adjusting the first radio frequency power to be 800 Watt to 1000 Watt, and the step of forming the second plasma includes adjusting the second radio frequency power to be 100 Watt to 300 Watt.

15. The method for forming a carbon-containing film according to claim 12, wherein, the plasma forming gas sprayed in the step of forming the first plasma and the step of forming the second plasma includes one or a combination of a hydrogen-containing gas, argon, or helium.

16. The method of claim 12, further comprising the step of adjusting a pressure of the inside of the chamber to be a pressure of 10 mTorr to 50 mTorr using the turbomolecular pump, i.e., TMP.

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