Exposure method and exposure equipment

Abstract

The invention discloses an exposure method and exposure equipment, and relates to the technical field of semiconductors, the exposure method comprises the following steps: arranging photomasks on two sides of a base material, and attaching the photomasks on two sides to the base material to form a closed area; the closed area is vacuumized, so that the vacuum degree meets the requirement of exposure treatment; performing trial exposure on the base material to obtain a trial exposure pattern; detecting position deviation data of the trial exposure pattern, and calculating an adjustment parameter B and an adjustment parameter F of the base material; adjusting the base material according to the adjusting parameters, and continuously exposing the base material; the exposure method is executed through exposure equipment, the exposure equipment comprises a feeding device used for conveying a base material, the feeding device adjusts the balance of the base material in the width direction through a balance mechanism, the adjustment parameter B is a balance motor value of the balance mechanism, and the adjustment parameter F is a tension value applied to the base material by the feeding device. According to the exposure method provided by the invention, the quality and the yield of the FMM finished product are improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor technology, in particular to an exposure method and an exposure device. BACKGROUND

[0002] Fine metal mask (FMM) is a core material in the production process of display screen, which mainly realizes accurate transfer of patterns in the evaporation process. FMM is formed by a substrate after multiple process steps, and one link in the FMM manufacturing process is exposure process by an exposure device, which can transfer the patterns on the mask to the substrate.

[0003] In the exposure process, the position of the substrate is prone to change during the conveying process, which affects the pattern accuracy and ultimately affects the quality and yield of the FMM finished product. SUMMARY

[0004] The present application aims to solve one of the problems in the related art to some extent. To this end, the present application provides an exposure method, which improves the quality and yield of the FMM finished product.

[0005] In order to achieve the above purpose, the present application adopts the following technical solutions: An exposure method, comprising: setting a mask on both sides of the substrate, and the masks on both sides of the substrate are attached to the substrate to form a closed area; vacuumizing the closed area to meet the requirements of exposure processing; performing a trial exposure on the substrate to obtain a trial exposure pattern; checking the position deviation data of the trial exposure pattern, and calculating adjustment parameters B and F for the substrate; adjusting the substrate according to the adjustment parameters, and continuously exposing the substrate; The exposure method is executed by an exposure device, the exposure device includes a feeding device for conveying the substrate, the mask is arranged on the exposure device, and the feeding device adjusts the balance of the substrate in the width direction through a balance mechanism. The adjustment parameter B is the balance motor value of the balance mechanism, and the adjustment parameter F is the tension value applied to the substrate by the feeding device.

[0006] The present application discloses an exposure method suitable for the production of FMM. In the production process of FMM, the patterns on the mask can be transferred to the substrate after the substrate is exposed. The position accuracy of the patterns on the substrate is related to the quality and yield of the FMM finished product.

[0007] The substrate is conveyed by the feeding device, and the feeding device applies tension to the substrate to keep the substrate taut, improve the flatness of the substrate surface, and help improve the uniformity of the substrate and the mask during exposure processing. The balancing mechanism can guide the substrate during conveying and adjust the positions of the two ends of the substrate in the width direction. The substrate is subjected to a trial exposure production before formal exposure processing. By detecting and analyzing the trial exposure products, the position deviation data of the trial exposure pattern can be obtained. By processing, analyzing and calculating the data, the adjustment parameters B and F of the substrate can be obtained.

[0008] The adjustment parameters B and F are the operating parameters of the feeding device and the balancing mechanism, respectively. The feeding device and the balancing mechanism are adjusted according to the adjustment parameters to eliminate or reduce the pattern position deviation caused by the position deviation and deformation of the substrate during formal exposure. In this way, the position accuracy of the pattern on the substrate is high during continuous exposure, and the quality of the FMM is good, and the yield of the FMM is also improved.

[0009] Optionally, the position deviation data of the trial exposure pattern comprises: a plurality of points are selected in the width direction and the length direction of the trial exposure product, and the coordinates of each point are obtained; the coordinates of each selected point are compared with the coordinates of the corresponding points on the standard product; the position deviation of each point in the length direction of the substrate is calculated.

[0010] The point coordinates on the trial exposure product are actual values, and the point coordinates on the standard product are theoretical perfect values. Comparing the actual values with the theoretical values can obtain the difference between the actual values and the theoretical values. In this way, the values of the adjustment parameters can be derived according to the difference to reduce or eliminate the difference between the actual values and the theoretical values.

[0011] Optionally, the calculation of the adjustment parameters B and F of the substrate comprises: According to the position deviation of each point, the deviation mean TPX' is calculated, and the deviation means TPX1 and TPX2 of a plurality of points at the two ends in the width direction of the substrate are calculated, respectively; The adjustment parameters B and F are calculated according to the formulas B=B1+(TPX1-TPX2) / (10xC) and F=F1+(TPX'-TPX) / A; wherein TPX is a set value, B1 is the balancing motor value during trial exposure, A=L1 / L, L1 is the exposure pulling distance, L is the mask length, C=2D1 / D, D1 is the trial exposure pattern width, and D is the mask width.

[0012] Optionally, the photomask has multiple exposure areas with different patterns, the substrate corresponds to one of the exposure areas on the photomask, and the vacuuming process for the sealed area includes: The sealed area was vacuumed multiple times.

[0013] The photomask of this application has multiple exposure areas, each with a pattern, and the patterns in different exposure areas are different. During the exposure process, the pattern can be transferred to the substrate as needed, and the corresponding exposure area can be selected for exposure processing of the substrate. During exposure, the photomasks on both sides of the substrate need to be in contact with the substrate, thus forming a closed area between the two photomasks. Subsequently, a vacuum process is performed on the closed area to prevent air in the closed area from refracting and scattering the light during exposure, which could lead to image position shift or insufficient accuracy. Furthermore, during the vacuum process, the substrate can also be tightly bonded to the photomask due to the negative pressure in the closed area, improving the exposure quality and thus improving the quality and yield of the FMM. The vacuuming of the closed area is performed in multiple stages to avoid completely removing the air at once, which would result in uneven bonding between the substrate and the photomask. Staged vacuuming allows for better bonding between the substrate and the photomask, reducing minor deformations of the substrate and lowering visual defects (exposure mura defects) such as unevenness, light spots, and differences in brightness after exposure, thereby improving the quality and yield of the FMM product.

[0014] Optionally, the vacuuming process for the enclosed area to ensure the vacuum level meets the requirements of the exposure process includes: The sealed area is vacuumed twice, with different vacuuming speeds for each process, to gradually increase the vacuum level until it meets the requirements for exposure processing.

[0015] The more vacuuming processes are performed, the longer the entire process will take, resulting in lower overall efficiency and potential misalignment of the photomask. Performing vacuuming twice ensures uniform adhesion between the substrate and the photomask while preventing excessively low exposure efficiency.

[0016] Optionally, the process of performing vacuuming on the enclosed area multiple times includes: The sealed area is evacuated at the first extraction speed to achieve the first set vacuum level. The closed area is evacuated at the second extraction speed to achieve the second set vacuum level. Wherein, the first extraction speed is not lower than the second extraction speed, and the second set value is a preset value when the vacuum degree meets the exposure processing requirements.

[0017] During the first vacuum extraction, a relatively fast vacuum is drawn to quickly expel most of the air, allowing the substrate to adhere rapidly to the photomask. During the second vacuum extraction, a slower vacuum is drawn to allow the air in the enclosed area to escape slowly, ensuring the substrate adheres evenly to the photomask. This avoids the problem of excessively high vacuum speeds trapping air between the substrate and the photomask, preventing minor deformation of the substrate. By performing two vacuum extractions, the substrate adheres more evenly to the photomask with minimal deformation, thus improving exposure quality.

[0018] Optionally, the range of the first extraction speed is 130L / min to 165L / min, and the first setting value is between -30KPA and 0; the range of the second extraction speed is 95L / min to 130L / min, and the second setting value is -40KPA.

[0019] During the first vacuuming process, if the vacuuming speed is below 130 L / min, the overall efficiency will be too low. If the vacuuming speed is above 165 L / min, the excessively fast vacuuming speed will generate a large local negative pressure in the enclosed area, causing slight deformation of the substrate and affecting the exposure quality. During the second vacuuming process, if the vacuuming speed is below 95 L / min, the overall efficiency will be too low. If the vacuuming speed is above 130 L / min, the excessively high vacuuming speed will make it difficult for the substrate to be evenly attached to the photomask.

[0020] Optionally, the photomask has multiple exposure areas with different patterns, and the photomasks on both sides are bonded to the substrate to form a closed area, including: Select the desired exposure area on the photomask; Adjust the relative position of the substrate and the photomask so that the substrate corresponds to the exposure area.

[0021] The photomask of this application has multiple exposure areas, each with a pattern, and the patterns in different exposure areas are different. During the exposure process, the pattern can be transferred to the substrate as needed, and the corresponding exposure area is selected for exposure processing of the substrate. During the exposure process, the substrate needs to correspond to the exposure area. After determining the pattern to be transferred, the relative position of the substrate and the photomask is adjusted so that the substrate corresponds to the exposure area with the corresponding pattern.

[0022] Optionally, the photomask is detachable and installable, and selecting the desired exposure area on the photomask includes: Determine the pattern to be formed on the substrate; Check the pattern on the photomask. If it does not match the required pattern, replace it with a photomask with the corresponding pattern on the exposure equipment. Determine the exposure area to which the pattern belongs, and block out the rest of the exposure area.

[0023] The photomask can be replaced according to the pattern requirements of the substrate without replacing the entire exposure equipment, thus reducing the cost of the exposure equipment. Because the photomask has multiple exposure areas, during the exposure process, light can pass through the exposure areas to illuminate the substrate, transferring the pattern of the exposed area to the substrate. By blocking the remaining exposure areas, the light from the remaining exposure areas can be prevented from affecting the pattern formed on the substrate, ensuring that the pattern meets the requirements.

[0024] Optionally, the blocking of the remaining exposure area includes: Cut masking patches of the same thickness according to the thickness of the substrate; Apply the masking patch to the remaining exposed areas.

[0025] The masking patch is attached to the remaining exposure area to block light, thereby eliminating the influence of light from the remaining exposure area on the exposure process. The thickness of the masking patch is the same as the thickness of the substrate. In this way, when the photomask is bonded to the substrate, local air leakage or movable masking patch in the sealed area can be avoided.

[0026] Optionally, the exposure apparatus further includes a frame track, the photomask includes a photomask frame, the photomask frame is slidably mounted on the frame track, and adjusting the relative position of the substrate and the photomask so that the substrate corresponds to the exposure area includes: Obtain the exposure area on the photomask and the location of the substrate, and calculate the displacement of the photomask frame and the photomask; Based on the displacement, move the photomask frame to align the substrate with the exposure area.

[0027] Furthermore, the present invention also provides an exposure apparatus for exposing a substrate, comprising a feeding device for conveying the substrate, the feeding device conveying the substrate in a roll-to-roll manner, the feeding device including an unwinding mechanism and a rewinding mechanism for applying tension to the substrate, the feeding device further including a balancing mechanism disposed on the substrate conveying path, the balancing mechanism including rollers for conveying the substrate and a balancing motor for adjusting the positions of the two ends of the rollers in the length direction of the substrate, the exposure apparatus performing the exposure treatment on the substrate using the aforementioned exposure method. The exposure apparatus provided by the present invention employs the aforementioned exposure method to expose the substrate, and has the same beneficial effects as the aforementioned exposure method, and the reasoning process for the beneficial effects is similar, and will not be repeated here.

[0028] These features and advantages of the present invention will be disclosed in detail in the following specific embodiments and accompanying drawings. The preferred embodiments or means of the present invention will be shown in detail in conjunction with the accompanying drawings, but are not intended to limit the technical solutions of the present invention. In addition, each of these features, elements and components appearing in the following text and drawings is a plurality of, and different symbols or numbers are used for convenience of representation, but all represent parts with the same or similar construction or function. Attached Figure Description

[0029] The present invention will be further described below with reference to the accompanying drawings: Figure 1 This is a schematic diagram of the exposure equipment in this invention; Figure 2 This is a schematic diagram of the photomask structure in this invention; Figure 3 This is a flowchart of the exposure method in this invention; Figure 4 This is a detailed flowchart of step S30 in the present invention; Figure 5 This is a detailed flowchart of step S20 in the present invention; Figure 6 This is a detailed flowchart of step S40 in the present invention; Figure 7 This is a detailed flowchart of step S50 in the present invention; Figure 8 This is a comparison diagram of the substrate before and after tension adjustment of the tension wheel in this invention; Figure 9 This is a comparison image of the substrate before and after the balance motor value is adjusted in this invention.

[0030] Figure label: Photomask 100, exposure area 110, masking patch 111, air extraction port 120, vacuum device 121, photomask frame 130, glass substrate 140; Substrate 200; Unwinding mechanism 300, winding mechanism 310, tension wheel 320, roller 330; Frame track 400. Detailed Implementation

[0031] Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described are intended to explain the present invention and should not be construed as limiting the invention.

[0032] The terms "an embodiment," "example," or "trademark" used in this specification refer to a particular feature, structure, or characteristic described in connection with the embodiment itself that may be included in at least one embodiment disclosed in this invention. The phrase "in an embodiment" appearing in various places throughout the specification does not necessarily refer to the same embodiment.

[0033] Reference Figures 1 to 3 This invention discloses an exposure method and an exposure apparatus. The exposure method is implemented using the exposure apparatus, which includes a photomask 100 and a feeding device. The exposure apparatus is used in the production of FMMs (fiberglass molded metals). The raw material for the FMMs is a substrate 200, which is a strip-shaped metal alloy. The substrate 200 is processed into FMMs through multiple steps, including exposure, development, etching, and film removal. The exposure apparatus is used to perform exposure treatment on the substrate 200 during the exposure stage.

[0034] Two photomasks 100 are provided and arranged opposite each other. The photomasks 100 are detachable from the exposure equipment, and a certain distance is maintained between them, allowing the substrate 200 to move between them. Each photomask 100 has an exposure area 110. During exposure, light can pass through the exposure area 110 and illuminate the substrate 200, transferring the pattern of the exposure area 110 onto the substrate 200. A feeding device is used to convey the substrate 200, allowing it to continuously pass between the two photomasks 100 for continuous exposure. The substrate 200 is in the form of a strip. The feeding device conveys the substrate 200 in a roll-to-roll manner. The feeding device includes an unwinding mechanism 300 and a winding mechanism 310. When conveying the substrate 200, the winding mechanism 310 winds the substrate 200 into a roll, and the unwinding mechanism 300 unwinds the rolled substrate 200 and conveys it to the winding mechanism 310. The feeding device also includes a balancing mechanism disposed on the conveying path of the substrate 200, which is used to adjust the balance of the substrate 200 in the width direction.

[0035] The unwinding mechanism and the winding mechanism have basically the same structure. Their unwinding and winding functions are related to the rotation direction of their motors. In actual use, the motors on the unwinding mechanism and the winding mechanism can also rotate in opposite directions, so that the function of the unwinding mechanism can be changed from unwinding to winding, and the function of the winding mechanism can be changed from winding to unwinding.

[0036] In this application, the photomask 100 is provided with multiple exposure areas 110, each of which is provided with a pattern, and the patterns of different exposure areas 110 are different. During the exposure process, the pattern can be transferred to the substrate 200 as needed, and the corresponding exposure area 110 is selected to expose the substrate 200.

[0037] The exposure method includes the following steps: S10, provides a substrate 200 with photosensitive adhesive applied to it; S20, select the desired exposure area 110 on the photomask 100, and adjust the relative position of the substrate 200 and the photomask 100 so that the substrate 200 corresponds to the exposure area 110; S30, the photomasks 100 on both sides of the substrate 200 are attached to the substrate 200 and form a closed area between the two photomasks 100; S40 involves performing vacuuming on the enclosed area multiple times to ensure the vacuum level meets the requirements for exposure processing. S50, the substrate 200 is subjected to a test exposure to obtain a test exposure pattern; S60, check the positional deviation data of the test exposure pattern, and calculate the adjustment parameters for the substrate 200 based on the positional deviation data; S70, the substrate 200 is adjusted according to the adjustment parameters, and the substrate 200 is continuously exposed.

[0038] During the exposure process, the substrate 200 needs to correspond to the exposure area 110. After determining the pattern to be transferred, the relative positions of the substrate 200 and the photomask 100 are adjusted so that the substrate 200 corresponds to the exposure area 110 with the corresponding pattern. During exposure, the photomasks 100 on both sides of the substrate 200 need to be in contact with the substrate 200, thus forming a closed area between the two photomasks 100. Subsequently, a vacuum treatment is performed on the closed area to prevent the air in the closed area from refracting and scattering the light during exposure, which could lead to translation of the transferred image position or insufficient accuracy. Furthermore, during the vacuum process, the substrate 200 can also be tightly bonded to the photomask 100 due to the negative pressure in the closed area, improving the exposure quality and thus improving the quality and yield of the FMM. Vacuuming of the enclosed area is performed in multiple stages to avoid completely removing the air at once, which would make it difficult for the substrate 200 and the photomask 100 to adhere evenly. Vacuuming in stages allows the substrate 200 and the photomask 100 to adhere better, reducing the slight deformation of the substrate 200 and reducing visual defects (exposure mura defects) such as unevenness, light spots, and differences in brightness after exposure, thereby improving the quality and yield of FMM finished products.

[0039] This method involves two exposures of the substrate 200: a trial exposure and a subsequent continuous exposure. By inspecting and analyzing the FMM (Flat Metal Mesh) product after the trial exposure, positional deviation data of the pattern formed after exposure is obtained. This data is then processed to obtain adjustment parameters for the substrate 200 (these parameters are also the operating parameters of the exposure equipment). The exposure equipment is then adjusted according to these parameters to eliminate or reduce the positional deviation of the pattern during the subsequent continuous exposure. This results in high positional accuracy of the pattern on the substrate 200 during continuous exposure, leading to the production of higher-quality FMMs and an increased yield rate.

[0040] The adjustment parameters mentioned above include B and F. Adjustment parameter B is the balance motor value of the balancing mechanism, and adjustment parameter F is the tension value applied to the substrate 200 by the feeding device.

[0041] In this way, when preparing different FMMs, the operating parameters of the exposure equipment can be adjusted after trial exposure to overcome the problems of exposure quality affected by factors such as photomask 100 replacement, substrate 200 size change, and precision requirement adjustment, thus ensuring high quality and high yield.

[0042] In order to accommodate multiple exposure areas 110, the size of the photomask 100 in this application is slightly enlarged compared to the original specifications, so that its size can meet the spacing requirements of multiple exposure areas 110. However, due to the increased size of the photomask 100, the adhesion between the substrate 200 and the photomask 100 during exposure becomes more difficult, referring to... Figures 1 to 4 Based on the above embodiments, in one embodiment of the present invention, step S40 involves performing vacuuming on the sealed area multiple times to ensure the vacuum level meets the exposure processing requirements, including: The sealed area is vacuumed twice, with different vacuuming speeds for each process, to gradually increase the vacuum level until it meets the requirements for exposure processing.

[0043] The more vacuuming steps involved, the longer the entire vacuuming process becomes, resulting in lower overall efficiency and increased risk of misalignment of the photomask 100. Performing vacuuming in two stages ensures uniform adhesion between the substrate 200 and the photomask 100 while preventing excessively low exposure efficiency. If misalignment of the photomask 100 is found after vacuuming, the atmospheric environment of the sealed area needs to be restored, and the vacuuming and alignment process repeated. Experiments have shown that the more vacuuming steps involved, the longer the re-alignment time and the lower the exposure efficiency. Therefore, step S40 divides the vacuuming process into two steps.

[0044] Specifically, the sealed area is vacuumed twice, including: The sealed area is evacuated at the first extraction speed to achieve the first set vacuum level. The closed area is evacuated at the second extraction speed to achieve the second set vacuum level. The first extraction speed is not lower than the second extraction speed, and the second setting value is a preset value when the vacuum degree meets the exposure conditions.

[0045] During the first vacuum extraction, a relatively fast vacuum is drawn to quickly expel most of the air to the outside, allowing the substrate 200 to quickly adhere to the photomask 100. During the second vacuum extraction, a relatively slower vacuum is drawn to allow the air in the enclosed area to escape slowly, ensuring the substrate 200 adheres evenly to the photomask 100. This avoids excessively high vacuum speeds that could trap air between the substrate 200 and the photomask 100, preventing minor deformation of the substrate 200. Through these two vacuum extractions, the substrate 200 adheres more evenly to the photomask 100 with minimal minor deformation, thus improving exposure quality.

[0046] The first extraction speed ranges from 130 L / min to 165 L / min, with a first set value between -30 kPa and 0. The second extraction speed ranges from 95 L / min to 130 L / min, with a second set value of -40 kPa. The first extraction speed can be 130 L / min, 135 L / min, 140 L / min, 145 L / min, 150 L / min, 155 L / min, 160 L / min, or 165 L / min; the second extraction speed can be 95 L / min, 100 L / min, 105 L / min, 110 L / min, 115 L / min, 120 L / min, 125 L / min, or 130 L / min.

[0047] During the first vacuuming process, if the vacuuming speed is below 130 L / min, the overall efficiency will be too low. If the vacuuming speed is above 165 L / min, the excessively fast vacuuming speed will generate a large local negative pressure in the enclosed area, causing slight deformation of the substrate 200 and affecting the exposure quality. During the second vacuuming process, if the vacuuming speed is below 95 L / min, the overall efficiency will be too low. If the vacuuming speed is above 130 L / min, the excessively high vacuuming speed will make it difficult for the substrate 200 to be uniformly attached to the photomask 100.

[0048] Step S40 is as follows: S41, vacuuming the closed area at a rate of 130L / min to 165L / min, so that the vacuum degree of the closed area reaches between -30KPA and 0; S42 performs vacuuming on the enclosed area at a rate of 95L / min to 130L / min, so that the vacuum level of the enclosed area reaches -40KPA.

[0049] Preferably, the range of the first extraction speed is 130L / min to 160L / min, and the range of the second extraction speed is 100L / min to 130L / min.

[0050] Once the vacuum level reaches the required level for exposure, the exposure process will not begin immediately. Instead, a certain amount of time will be allowed for the substrate 200 to adapt to the vacuum environment in the enclosed area and to stably adhere to the photomask 100.

[0051] Reference Figure 1 and Figure 2 Based on the above embodiments, in one embodiment of the present invention, a plurality of air extraction ports 120 are provided on the photomask 100. The photomask 100 includes a photomask frame 130 and a glass substrate 140 disposed on the photomask frame 130. The plurality of air extraction ports 120 are disposed on the photomask frame 130 and are spaced apart circumferentially along the glass substrate 140.

[0052] The substrate 200 is bonded to the glass substrate 140 during the exposure process.

[0053] A vacuum pumping device 121 is provided on the outside of the photomask 100, and the vacuum pumping device 121 is sealed to the air extraction port 120. The vacuum pumping device 121 can be a vacuum pump.

[0054] By setting multiple air extraction ports 120 and distributing them around the substrate 200, it is possible to prevent the air in the enclosed area from flowing in only one direction and generating excessive force, which could cause the position of the substrate 200 to change.

[0055] Reference Figure 5 Based on the above embodiments, in one embodiment of the present invention, step S20, selecting the desired exposure area 110 on the photomask 100, includes the following steps: S21, Determine the pattern to be formed on the substrate 200; S22, calibrate the pattern on the photomask 100. If it does not match the required pattern, replace the photomask 100 with the corresponding pattern on the exposure equipment. S23, determine the exposure area 110 to which the pattern belongs, and block the rest of the exposure area 110.

[0056] The photomask 100 on the exposure equipment can be replaced according to the pattern requirements of the substrate 200 without replacing the entire exposure equipment, thus reducing the cost of the exposure equipment.

[0057] Because the photomask 100 has multiple exposure areas 110, during the exposure process, by blocking the remaining exposure areas 110, the light from the remaining exposure areas 110 can be prevented from affecting the pattern formed on the substrate 200, so as to ensure that the pattern pattern meets the requirements.

[0058] In step S23, blocking the remaining exposed area 110 includes the following steps: S231, Cut a masking patch 111 of the same thickness according to the thickness of the substrate 200; S232, attach the masking patch 111 to the remaining exposure area 110.

[0059] The material of the masking patch 111 can be PET (polyethylene terephthalate), which is transparent or milky white in its natural color. It can be modified to achieve a light-blocking effect, blocking the light from the other exposure areas 110, thereby eliminating the influence of the light from the other exposure areas 110 on the exposure process. The thickness of the masking patch 111 is the same as the thickness of the substrate 200. In this way, when the photomask 100 is bonded to the substrate 200, local air leakage in the sealed area or the masking patch 111 being movable can be avoided.

[0060] The exposure equipment also includes a translation device, which includes a drive unit and a frame track 400. The photomask frame 130 is slidably mounted on the frame track 400. The drive unit is used to drive the photomask frame 130 to slide and translate along the frame track 400 to adjust the exposure area 110 corresponding to the substrate 200.

[0061] In step S20, adjusting the relative position of the substrate 200 and the photomask 100 so that the substrate 200 corresponds to the exposure area 110 includes: S24, calculate the displacement of the photomask 100 based on the position of the exposure area 110 on the photomask 100 and the position of the substrate 200; S25, start the driving unit, drive the photomask frame 130 to move by a set displacement, so that the substrate 200 corresponds to the exposure area 110.

[0062] The specific steps of step S20 are as follows: S21, Determine the pattern to be formed on the substrate 200; S22, calibrate the pattern on the photomask 100. If it does not match the required pattern, replace the photomask 100 with the corresponding pattern on the exposure equipment. S23, determine the exposure area 110 to which the pattern belongs; S231, Cut a masking patch 111 of the same thickness according to the thickness of the substrate 200; S232, attach the masking patch 111 to the remaining exposure areas 110; S24, calculate the displacement of the photomask 100 based on the position of the desired exposure area 110 on the photomask 100 and the position of the substrate 200; S25, start the driving unit, drive the photomask frame 130 to move by a set displacement, so that the substrate 200 corresponds to the exposure area 110.

[0063] In this application, two exposure areas 110 are provided on the photomask 100 along the width direction of the substrate 200, and the pattern width in the exposure area 110 is ≤240mm.

[0064] Reference Figure 1 , Figure 6 , Figure 8 and Figure 9 Based on the above embodiments, in one embodiment of the present invention, when the feeding device conveys the substrate 200, the unwinding mechanism 300 and the winding mechanism 310 apply tension to the substrate 200 to keep the substrate 200 taut, thereby improving the surface flatness of the substrate 200 and helping to improve the uniformity of adhesion between the substrate 200 and the photomask 100 during exposure processing. The balancing mechanism includes a roller 330 for conveying the substrate 200 and a balancing motor for adjusting the position of both ends of the roller 330 in the length direction of the substrate 200. The roller 330 is driven by the balancing motor to adjust its relative position with the substrate 200, thereby guiding the substrate 200 through the roller 330 and adjusting the position of both ends of the substrate 200 in the width direction.

[0065] Both the unwinding mechanism 300 and the winding mechanism 310 include a tension wheel 320, which is disposed on the conveying path of the substrate 200 and can apply tension to the substrate 200.

[0066] Step S60 is executed in two steps: S61, Detect the positional deviation data of the test exposure pattern on substrate 200; S62, based on the position deviation data, calculate the adjustment parameter F of the unwinding mechanism 300 and the winding mechanism 310, and the adjustment parameter B of the balancing mechanism.

[0067] By using the positional deviation data of the pattern on the substrate 200 obtained after test exposure, the adjustment parameters of the unwinding mechanism 300, the winding mechanism 310, and the balancing mechanism can be calculated to reduce the positional deviation of the pattern.

[0068] In step S61, the positional deviation data of the test exposure pattern on the substrate 200 is detected, including: S611, Select multiple points in the width and length directions of the test-exposed product and obtain the coordinates of each point; S612, compare the coordinates of each selected point with the coordinates of the corresponding point on the standard product; S613, calculate the positional deviation data of each point in the length direction of the substrate 200; S614, calculate the average deviation TPX` of all points, and calculate the average deviation TPX1 and TPX2 of multiple points at both ends of the width direction of the substrate 200 respectively.

[0069] The coordinates of the points on the test product are the actual values, while the coordinates of the points on the standard product are the theoretical perfect values. By comparing the actual values ​​with the theoretical values, the difference between the actual values ​​and the theoretical values ​​can be obtained. In this way, the values ​​of the adjustment parameters can be derived based on the difference to reduce or eliminate the gap between the actual values ​​and the theoretical values.

[0070] In step S62, the adjustment parameters of the unwinding mechanism 300, the winding mechanism 310, and the balancing mechanism are calculated based on the position deviation value, specifically as follows: According to the formula B=B1+(TPX1-TPX2) / (10×C), calculate the balance motor value B that the balancing mechanism needs to adjust. According to the formula F=F1+(TPX`-TPX) / A, calculate the tension value F that the unwinding mechanism 300 and the winding mechanism 310 need to adjust.

[0071] Wherein, F1 is the tension value applied to the substrate 200 by the unwinding mechanism 300 and the winding mechanism 310 during the test exposure, TPX is the set value, B1 is the balance motor value during the test exposure, A=L1 / L, L1 is the exposure pulling distance, L is the length of the photomask 100, C=2D1 / D, D1 is the width of the exposure pattern, and D is the width of the photomask 100.

[0072] For example, 36 points are selected on the substrate 200, with 12 points per group. The three groups of points are distributed at intervals along the width direction (X direction) of the substrate 200, and the 12 points in each group are distributed at intervals along the length direction (Y direction) of the substrate 200. The positional deviation of each point in the X direction can be obtained by detection, and TPX1, TPX2, and TPX' are calculated accordingly. Each point is named with its position in the X direction + position in the X direction + position in the Y direction. Thus, TPX1 is the average deviation of the three points X1.1, X1.2, and X1.3, and TPX2 is the average deviation of the three points X12.1, X12.2, and X12.3.

[0073] like Figure 8 and Figure 9 The images shown are comparisons of the substrate before and after the tension of the tension wheel and the value of the balance motor are adjusted. Figure 8 In the diagram on the left, TPX' > TPX. By adjusting the tension, TPX can be made equal to TPX'. Figure 8 (Right-side view). Figure 9 In the diagram on the left, TPX1 > TPX2. By adjusting the balance motor value, TPX1 = TPX2. Figure 9 (View on the right side of the middle section).

[0074] Reference Figure 7 Based on the above embodiments, in one embodiment of the present invention, step S70 includes: S71, set the operating parameters of the exposure equipment according to the adjustment parameters B and F; S72, the photomasks 100 on both sides of the substrate 200 are attached to the substrate 200 and form a closed area between the two photomasks 100; S73, vacuum treatment is performed on the enclosed area to ensure that the vacuum level meets the requirements of the exposure process; S74, Exposure treatment is performed on substrate 200; S75, the photomasks 100 on both sides of the substrate 200 are separated from the substrate 200; S76, if the substrate is not fully exposed, the substrate is conveyed to a set length, and then step S72 is executed. If the substrate is fully exposed, the exposure process ends.

[0075] Wherein, the set length = pattern length + spacing between adjacent patterns.

[0076] During continuous exposure, the positional accuracy of the exposed pattern can be randomly checked to recalculate the adjustment parameters B and F during continuous exposure for result verification; the operating parameters of the exposure equipment can also be adjusted at any time to ensure the quality of the finished product.

[0077] Table 1 below shows the positional deviations in the X direction of multiple points along the width of the substrate before the improvement: Table 1 (Unit: μm)

[0078] Table 2 below shows the positional deviations in the Y direction of multiple points along the length of the substrate before the improvement: Table 2 (Unit: μm)

[0079] Table 3 below shows the positional deviations in the X direction of multiple points along the width of the substrate after the improvement: Table 3 (Unit: μm)

[0080] Table 4 below shows the positional deviations in the Y direction of multiple points along the width of the substrate after the improvement: Table 4 (Unit: μm)

[0081] As can be seen from the data in Tables 1 to 4, the positional deviation of the pattern is significantly reduced after using the exposure equipment and exposure scheme of this application.

[0082] The above are merely specific embodiments of the present invention, but the scope of protection of the present invention is not limited thereto. Those skilled in the art should understand that the present invention includes, but is not limited to, the contents described in the accompanying drawings and the specific embodiments above. Any modifications that do not depart from the functional and structural principles of the present invention will be included within the scope of the claims.

Claims

1. An exposure method characterized by, The application relates to an exposure method and an exposure device. The application comprises the following steps: A mask (100) is arranged on both sides of a substrate (200), and the mask (100) on both sides is attached to the substrate (200) to form a closed area; The closed area is subjected to vacuum treatment, and the vacuum degree meets the requirement of exposure treatment; Trial exposure is performed on the substrate (200), and a trial exposure pattern is obtained; Position deviation data of the trial exposure pattern is detected, and adjustment parameters B and F of the substrate (200) are calculated; The substrate (200) is adjusted according to the adjustment parameters, and continuous exposure is performed on the substrate (200); 2. The exposure method according to claim 1, wherein The exposure method is performed by an exposure device, the exposure device comprises a feeding device for conveying the substrate (200), the mask (100) is arranged on the exposure device, the feeding device adjusts the balance of the substrate (200) in the width direction through a balance mechanism, the adjustment parameter B is a balance motor value of the balance mechanism, and the adjustment parameter F is a tension value applied to the substrate (200) by the feeding device. The detection of the position deviation data of the trial exposure pattern comprises the following steps: A plurality of point positions are selected in the width direction and the length direction of the trial exposure product, and the coordinates of each point position are obtained; The coordinates of each selected point position are compared with the coordinates of corresponding point positions on a standard product; 3. The exposure method according to claim 2, wherein The position deviation of each point position in the length direction of the substrate (200) is calculated. The calculation of the adjustment parameters B and F of the substrate (200) comprises the following steps: According to the position deviation of each point position, the deviation average TPX' is calculated, and the deviation averages TPX1 and TPX2 of a plurality of point positions at two ends in the width direction of the substrate (200) are respectively calculated; The adjustment parameters B and F are calculated according to the formulae B=B1+(TPX1-TPX2) / (10xC) and F=F1+(TPX'-TPX) / A; 4. The exposure method according to any one of claims 1 to 3, wherein Wherein, TPX is a set value, B1 is a balance motor value during trial exposure, A=L1 / L, L1 is an exposure pulling distance, L is the length of the mask (100), C=2D1 / D, D1 is the width of the trial exposure pattern, and D is the width of the mask (100). A plurality of exposure areas (110) are arranged on the mask (100), the plurality of exposure areas (110) have different patterns, the substrate (200) corresponds to one of the exposure areas (110) on the mask (100), and the vacuum treatment of the closed area comprises the following steps:

5. The exposure method according to claim 4, wherein The vacuum treatment of the closed area is performed in multiple times. The vacuum treatment of the closed area is performed in two times, and the vacuum speeds of the two times of vacuum treatment are different, so that the vacuum degree is enhanced in steps to meet the requirement of exposure treatment.

6. The exposure method according to claim 5, wherein The vacuum treatment of the closed area is performed in multiple times. The vacuum treatment of the closed area is performed at a first extraction speed, so that the vacuum degree of the closed area reaches a first set value; The vacuum treatment of the closed area is performed at a second extraction speed, so that the vacuum degree of the closed area reaches a second set value; Wherein, the first extraction speed is not lower than the second extraction speed, and the second set value is a preset value when the vacuum degree meets the requirement of exposure treatment.

7. The exposure method according to claim 6, wherein The first extraction speed ranges from 130L / min to 165L / min, the first set value ranges from -30KPA to 0, the second extraction speed ranges from 95L / min to 130L / min, and the second set value ranges from -40KPA to 0.

8. The exposure method according to any one of claims 1 to 3, wherein The mask (100) is provided with a plurality of exposure areas (110), the plurality of exposure areas (110) have different patterns, and the mask (100) on the two sides is attached to the base material (200) to form a closed area, comprising: Selecting the required exposure area (110) on the mask (100); Adjusting the relative position of the base material (200) and the mask (100) to make the base material (200) correspond to the exposure area (110).

9. The exposure method according to claim 8, wherein The mask can be installed and removed, and the selecting the required exposure area (110) on the mask (100) comprises: Determining the pattern style required to be formed on the base material (200); Checking the pattern style on the mask (100), if it does not match the required pattern style, replacing the mask (100) with the corresponding pattern on the exposure equipment; Determining the exposure area (110) to which the pattern belongs, and shielding the remaining exposure areas (110).

10. The exposure method according to claim 9, wherein The shielding the remaining exposure areas (110) comprises: According to the thickness of the base material (200), cutting shielding patches (111) with the same thickness; Attaching the shielding patches (111) to the remaining exposure areas (110).

11. The exposure method according to claim 8, wherein The exposure equipment further comprises a frame rail (400), the mask (100) comprises a mask frame (130), the mask frame (130) is slidingly installed on the frame rail (400), and the adjusting the relative position of the base material (200) and the mask (100) to make the base material (200) correspond to the exposure area (110) comprises: Obtaining the exposure area (110) on the mask (100) and the position of the base material (200), and calculating the displacement amount of the mask frame (130) and the mask (100); According to the displacement amount, moving the mask frame (130) to make the base material (200) correspond to the exposure area (110).

12. An exposure apparatus for exposing a substrate (200) to an exposure process, comprising a feeding device for feeding the substrate (200), characterized in that, The feeding device adopts a roll-to-roll mode to convey the base material (200), the feeding device comprises a unwinding mechanism (300) and a winding mechanism (310) for applying tension to the base material (200), and the feeding device further comprises a balancing mechanism arranged on the conveying path of the base material (200), the balancing mechanism comprises a roller (330) for conveying the base material (200) and a balancing motor for adjusting the positions of both ends of the roller (330) in the length direction of the base material (200), and the exposure equipment adopts the exposure method of any one of claims 1 to 11 to perform exposure processing on the base material (200).

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