Glass through hole substrate and preparation method thereof

By using a support plate and a biodegradable adhesive in the fabrication of glass through-hole substrates, metallization of high aspect ratio through-holes was achieved, solving the problems of fragile thin glass and high production costs, and improving yield and production efficiency.

CN121693178AActive Publication Date: 2026-03-17SEMICON WET PROCESS EQUIP SUZHOU CO LTD
View PDF 3 Cites 0 Cited by

Patent Information

Application Number
CN202610186581.5
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2026-02-10
Publication Date
2026-03-17
Estimated Expiration
2046-02-10

AI Technical Summary

Technical Problem

Existing technologies for preparing glass through-hole substrates suffer from the following drawbacks: thin glass is easily broken, the metallization process is complex, production costs are high, and it is difficult to achieve the metallization of through-holes with high aspect ratios and the processing of patterns with different thicknesses on both sides.

Method used

By combining a support plate with a biodegradable adhesive, a first metal layer is first deposited inside the through-holes of the glass substrate, then a second metal layer is deposited on the support plate, and finally a third metal layer is deposited on the other side of the glass substrate, achieving full coverage metallization of the through-holes, simplifying the process and reducing the risk of glass breakage.

Benefits of technology

This technology enables the metallization of high aspect ratio through-holes, reduces the probability of glass substrate breakage, simplifies the process, lowers production costs, and improves yield.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure CN121693178A_ABST
    Figure CN121693178A_ABST
Patent Text Reader

Abstract

The invention discloses a glass through hole substrate and a preparation method thereof. The preparation method comprises the steps that S1, a glass substrate with a through hole is provided, the glass substrate is provided with a first face and a second face which are opposite, and the through hole penetrates from the first face to the second face; s2, providing a supporting plate, wherein the supporting plate is coated with a first metal layer through a decomposable adhesive; s3, bonding the first surface of the glass substrate and the first metal layer on the supporting plate to enable the first end of the through hole to be covered by the first metal layer; s4, depositing metal on the first metal layer exposed in the through hole to form a second metal layer, and filling the through hole with the second metal layer; s5, the decomposable adhesive is decomposed, and the supporting plate is separated from the first metal layer; and S6, metal is deposited on the second surface of the glass substrate to form a third metal layer, and the third metal layer covers the second end of the through hole. According to the invention, the metallization of the high-aspect-ratio through hole can be realized, the probability of breaking the glass substrate is reduced, the process flow is simplified, and the production cost is reduced.
Need to check novelty before this filing date? Find Prior Art

Description

TECHNICAL FIELD

[0001] The present application relates to a glass through via substrate and a preparation method thereof. BACKGROUND

[0002] The glass through via (TGV) substrate is a new type of printed circuit board substrate or IC carrier substrate, compared with the common silicon and SOI substrate, the glass through via substrate has excellent electrical performance and lower parasitic capacitance, which is beneficial to the expansion of high-frequency signal transmission. And the excellent optical performance of glass makes it more suitable for optical applications such as micro-optical-mechanical systems. In general, the glass through via substrate can have high-density, high-aspect-ratio glass through vias, reduce device size, while maintaining high-performance electrical interconnection, and has very broad application prospects.

[0003] At present, there are various preparation methods for metalizing the glass through via substrate, but there are the following problems: thin plate glass (thickness less than 400 um) is easy to break in the process flow; the glass surface directly sputtered with metal shows peeling phenomenon in later thermal shock test; high aspect ratio TGV hole (AR>10 or more) faces sputtering capacity bottleneck or needs to increase equipment capacity (higher order sputtering / atomic layer deposition), resulting in a sharp increase in production cost; the general bridge type electroplating process is prone to problems such as core hole or large hole diameter bridge not easy; the electroplating process is basically single piece production, and it is difficult to achieve double-sided glass with different thicknesses and different patterns; the general hole filling is easy to cause glass cracking, damage, and increase production cost.

[0004] The above information disclosed in the background section is only used to strengthen the understanding of the background of the present application, and therefore it can include information that does not constitute prior art known to those of ordinary skill in the art. SUMMARY

[0005] In view of the above technical problems, the present application provides a glass through via substrate and a preparation method thereof, which can realize the metallization of high aspect ratio through holes, reduce the probability of glass substrate breakage, simplify the process flow, and reduce the production cost.

[0006] The first aspect of the present application provides a preparation method of a glass through via substrate, comprising the following steps: S1, providing a glass substrate with a through hole, the glass substrate having opposite first and second surfaces, the through hole penetrating from the first surface to the second surface; S2, providing a support plate, the support plate being provided with a first metal layer by a decomposable adhesive; S3, bonding the first surface of the glass substrate and the first metal layer on the support plate to each other, so that the first end of the through hole is covered by the first metal layer; S4, depositing metal on the first metal layer exposed in the via hole to form a second metal layer, the via hole being filled by the second metal layer; S5, decomposing the decomposable adhesive to separate the support plate from the first metal layer; S6, depositing metal on the second surface of the glass substrate to form a third metal layer, the third metal layer covering the second end of the via hole; Wherein, the second metal layer in the via hole communicates the first metal layer and the third metal layer.

[0007] In some preferred embodiments, in step S1, the aspect ratio of the via hole is 1-50, and the aperture is 2-200 μm; the first surface and / or the second surface of the glass substrate comprises a patterned insulating layer disposed thereon, the insulating layer having a window, the via hole being exposed from the window, and the thickness of the insulating layer is 5 nm-100 μm. In step S3, the first metal layer is bonded on the insulating layer of the first surface, and the window on the insulating layer is filled by the second metal layer. In step S6, metal is deposited on the insulating layer of the second surface of the glass substrate, and the window on the insulating layer is filled by the third metal layer.

[0008] In some more preferred embodiments, the insulating layer comprises one or more of silicon dioxide, silicon oxynitride, poly-p-phenylene benzobisoxazole, PID (photo induced dieletric) material, and polyimide.

[0009] In some preferred embodiments, in step S2, the decomposable adhesive comprises pyrolytic glue, and in step S5, the pyrolytic glue is decomposed by heating.

[0010] In some preferred embodiments, in step S2, the decomposable adhesive is coated on the support plate; or the decomposable adhesive is on a tape, and the tape is attached to the support plate.

[0011] In some preferred embodiments, in step S2, the thickness of the support plate is 100 um-2000 um, and the support plate comprises one or more of a metal plate, a glass fiber reinforced epoxy resin laminate; and / or, the first metal layer is deposited on the support plate or a decomposable adhesive layer attached to the support plate, and the thickness of the first metal layer is 2 um-100 um.

[0012] In some preferred embodiments, in step S3, the glass substrate and the first metal layer are bonded by hot pressing.

[0013] In some preferred embodiments, in step S4, a first metal layer is electroplated in the through hole; and in step S6, a third metal layer is electroplated on the second metal layer in the through hole.

[0014] In some preferred embodiments, in step S5, the first metal layer is patterned to form a first circuit. In step S6, the third metal layer covers the second surface, and the third metal layer is patterned to form a second circuit, thereby obtaining a glass through hole substrate; or, a bump is formed on the second metal layer in the through hole by electroplating or a metal ball implantation process, and the third metal layer includes the bump, thereby obtaining a glass through hole substrate.

[0015] In some preferred embodiments, in step S2, a first metal layer is provided on both opposite surfaces of the support plate; and in step S3, one of the glass substrates is bonded to the first metal layer on each of the two surfaces of the support plate.

[0016] The second aspect of the present application provides a glass through hole substrate obtained by the preparation method.

[0017] In an embodiment, the glass through hole substrate comprises: a glass substrate having a through hole, the glass substrate having opposite first and second surfaces, and the through hole penetrating from the first surface to the second surface; a first insulating layer provided on the first surface of the glass substrate, the first insulating layer having a first window, and the through hole being exposed from the first window; a second insulating layer provided on the second surface of the glass substrate, the second insulating layer having a second window, and the through hole being exposed from the second window; a first metal layer provided on the first insulating layer in a patterned manner, one end of the through hole being covered by the first metal layer; a second metal layer filling the first window and the through hole and contacting the first metal layer; a third metal layer filling the second window and contacting the second metal layer.

[0018] In an embodiment, the aspect ratio of the through hole is 1-50, and the aperture is 2-200 μm. The thickness of the support plate is 100 um-2000 um, and the support plate comprises one or more of a metal plate, a glass fiber reinforced epoxy resin laminate plate. The thickness of the insulating layer is 5 nm-100 μm; the insulating layer comprises one or more of silicon dioxide, silicon oxynitride, poly (p-phenylene benzobisoxazole), PID material, and polyimide. The thickness of the first metal layer is 2 um-100 um, and the first metal layer is a copper plating layer or a copper foil.

[0019] In one embodiment, the third metal layer includes a bump protruding relative to the second insulating layer.

[0020] The present application has the following advantages compared with the prior art by adopting the above scheme: The preparation method of the glass through-hole substrate sets the first metal layer on the glass substrate through the support plate, takes the first metal layer exposed in the through-hole as a base, deposits the second metal layer on the base to realize the metallization in the through-hole, then removes the support plate from the glass substrate, and deposits the third metal layer on the second metal layer exposed on the second surface to realize the electrical connection of both sides of the substrate, which can realize the metallization of the high aspect ratio through-hole, reduce the probability of glass substrate breakage, and improve the yield. BRIEF DESCRIPTION OF DRAWINGS

[0021] In order to more clearly illustrate the technical solutions of the present application, the following will briefly introduce the drawings needed to be used in the embodiments. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can also be obtained by those skilled in the art without any creative effort based on these drawings.

[0022] Figure 1 It is a structure diagram of a glass through-hole substrate according to Embodiment 1 of the present application.

[0023] Figure 2 It is a preparation flow chart according to Embodiment 1 of the present application.

[0024] Figure 3 It is a preparation schematic diagram of an A plate according to Embodiment 1 of the present application.

[0025] Figure 4 It is a preparation schematic diagram of a B plate according to Embodiment 1 of the present application.

[0026] Figure 5 It is a bonding process schematic diagram of an A plate and a B plate according to Embodiment 1 of the present application.

[0027] Figure 6 It is a preparation schematic diagram of a second metal layer according to Embodiment 1 of the present application.

[0028] Figure 7 It is a preparation schematic diagram of a third metal layer according to Embodiment 1 of the present application.

[0029] Figure 8 It is a structure diagram of another glass through-hole substrate according to Embodiment 1 of the present application.

[0030] Figure 9A flow chart for preparing a glass via substrate according to Embodiment 2 of the present application.

[0031] Figure 10 A schematic diagram for preparing an A plate according to Embodiment 2 of the present application.

[0032] Figure 11 A schematic diagram for preparing two glass substrates provided with a first metal layer and a second metal layer according to Embodiment 2 of the present application.

[0033] Figure 12 A microscope photograph of a glass via substrate according to an embodiment of the present application.

[0034] Reference Signs: 1, glass substrate; 10, via; 11, first surface; 12, second surface; 2, first insulating layer; 20, first window; 3, second insulating layer; 30, second window; 4, first metal layer; 40, sputtering layer; 41, support plate; 42, decomposable adhesive; 5, second metal layer; 6, third metal layer; 61, bump. DETAILED DESCRIPTION

[0035] The preferred embodiments of the present application will be described in detail below with reference to the drawings. It should be noted that the description of the embodiments is for the purpose of helping to understand the present application, and does not constitute a limitation on the present application.

[0036] In this document, the terms "upper", "lower", "front", "back", and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the present application.

[0037] Embodiment 1 Embodiment 1 provides a glass via substrate and a method for preparing the same. Referring to FIG. 1, the glass via substrate includes a glass substrate 1, a first metal layer 4, a second metal layer 5, and a third metal layer 6; further, the glass via substrate can also include a first insulating layer 2 and a second insulating layer 3, and the surface of the glass substrate 1 is isolated by the first insulating layer 2 and the second insulating layer 3, which can avoid the peeling phenomenon shown in the later thermal shock test after the glass surface is directly sputtered with metal. Figure 1 The preparation process of the glass via substrate is shown. Figures 2 to 7 In combination with

[0038] Figures 1 to 7 ​As shown, the glass substrate 1 can be a glass plate with opposite first surfaces 11 and second surfaces 12. One or more through-holes 10 are formed on the glass substrate 1, extending from the first surface 11 to the second surface 12. The shape of the glass substrate 1 can be a wafer or a polygonal (e.g., a wafer) piece, such as an 8-inch or 12-inch circle, or a square or rectangle with a side length greater than 100 mm. The thickness of the glass substrate 1 can be 100 μm to 1600 μm. The aspect ratio (AR) of the through-holes 10 is 1 to 50, and the aperture is 2 to 200 μm.

[0039] A first insulating layer 2 is applied to the first surface 11 of the glass substrate 1. A first window 20 is formed on the first insulating layer 2, and a through-hole 10 is exposed through the first window 20. The thickness of the first insulating layer 2 is 5 nm to 100 μm. The material of the first insulating layer 2 includes one or more of silicon dioxide, silicon oxynitride, poly(p-phenylenebenzodioxazole), PID material, and polyimide.

[0040] A second insulating layer 3 is applied to the second surface 12 of the glass substrate 1. A second window 30 is formed on the second insulating layer 3, and a through-hole 10 is exposed through the second window 30. The thickness of the second insulating layer 3 is 5 nm to 100 μm. The material of the second insulating layer 3 includes one or more of silicon dioxide, silicon oxynitride, poly(p-phenylenebenzodioxazole), PID material, and polyimide.

[0041] The first metal layer 4 is disposed on the first insulating layer 2, and the first metal layer 4 is patterned to form a circuit on the first surface 11 of the glass substrate 1. One end of the via 10 (the end closest to the first surface 11) is covered by the first metal layer 4. The thickness of the first metal layer 4 is 2um to 100um, and the first metal layer 4 is a copper plating or copper foil.

[0042] The second metal layer 5 fills the first window 20 and the through hole 10 and contacts the first metal layer 4.

[0043] The third metal layer 6 is disposed on the second insulating layer 3, and the third metal layer 6 is patterned to form a circuit covering the second surface 12 of the glass substrate 1. The other end of the via 10 (the end closer to the first surface 11) is covered by the third metal layer 6. In addition, the second window 30 on the second insulating layer 3 is also filled by the third metal layer 6. The second metal layer 5 conducts electricity between the first metal layer 4 and the third metal layer 6 on both sides of the glass substrate 1, forming an electrical connection in the thickness direction.

[0044] Figure 2 It shows Figure 1 The fabrication process of the glass through-hole substrate. (Refer to...) Figure 2 As shown, the fabrication method of this glass through-hole substrate includes the following steps: S11, providing a glass substrate 1 with a through hole 10, the glass substrate 1 having opposite first and second surfaces 11 and 12, the through hole 10 extending from the first surface 11 to the second surface 12; S12, providing a support plate 41, the support plate 41 being provided with a first metal layer 4 by a decomposable adhesive 42; S13, bonding the first surface 11 of the glass substrate 1 and the first metal layer 4 on the support plate 41 to each other, so that the first end of the through hole 10 is covered by the first metal layer 4; S14, depositing metal on the first metal layer 4 exposed in the through hole 10 to form a second metal layer 5, the through hole 10 being filled with the second metal layer 5; S15, decomposing the decomposable adhesive 42 to separate the support plate 41 from the first metal layer 4; S16, depositing metal on the second surface 12 of the glass substrate 1 to form a third metal layer 6, the third metal layer 6 covering the second end of the through hole 10, wherein the second metal layer 5 in the through hole 10 connects the first metal layer 4 and the third metal layer 6.

[0045] In step S11, the glass substrate 1 can be a glass flat plate having opposite first and second surfaces 11 and 12. One or more through holes 10 are formed in the glass substrate 1, the through holes 10 extending from the first surface 11 to the second surface 12. The shape of the glass substrate 1 can be a wafer or a wafer-shaped polygon, for example, a circular shape with a diameter of 8 inches or 12 inches, or a square or rectangular shape with a side length greater than 100 mm. The thickness of the glass substrate 1 can be 100 μm to 1600 μm. The aspect ratio (depth / width or diameter) of the through hole 10 is 1 to 50, and the aperture is 2 to 200 μm.

[0046] Referring to Figure 3 As shown in the figure, step S12 specifically includes: Step S121, cleaning the support plate 41; the thickness of the support plate 41 is 100 um to 2000 um, and the support plate 41 includes one or more of a metal plate, a glass fiber reinforced epoxy resin laminate plate. In this embodiment, the support plate 41 is selected to be a titanium plate.

[0047] Step S122, applying or pasting a decomposable adhesive 42 on one surface of the support plate 41; in this embodiment, the decomposable adhesive 42 includes a pyrolytic glue, for example, a bio-oil-based adhesive, which loses the adhesive effect after being heated to a preset temperature. The decomposable adhesive 42 can also be a light-decomposable adhesive, etc. The decomposable adhesive 42 is applied on the support plate 41; or the decomposable adhesive 42 is located on an adhesive tape, and the adhesive tape is pasted on the support plate 41.

[0048] Step S123, providing the first metal layer 4 on the decomposable adhesive 42.

[0049] The combination of boards obtained through steps S121 to S123 is called board A.

[0050] Specifically, in this embodiment, Ti / Cu is first sputtered onto the biodegradable adhesive 42 or a tape containing the biodegradable adhesive 42 to form a sputtered layer 40; then, a metal layer is deposited (e.g., electroplated) on the sputtered layer 40 to finally form a first metal layer 4 with a thickness of 2µm to 100µm. In other embodiments, copper foil can be directly laminated onto the biodegradable adhesive 42 without sputtering Ti / Cu.

[0051] Reference Figure 4 As shown, before step S13, the glass substrate 1 is first processed as follows: the glass substrate 1 is laser-modified and etched to form multiple through holes 10; a first insulating layer 2 is coated on the first surface 11 of the glass substrate 1; the first insulating layer 2 is processed to form a first window 20 that is aligned and connected to the multiple through holes 10, and the obtained board assembly is called board B. The first insulating layer 2 is a photosensitive polyimide layer applied to the glass substrate 1 using a PSPI coating process; the first window 20 is formed by patterning using exposure / development technology, and the through holes 10 are exposed from the first window 20. In other embodiments, the first insulating layer 2 can also be silicon dioxide, silicon oxynitride, poly(p-phenylenebenzodioxazole), PID material, etc. The thickness of the first insulating layer 2 is 5 nm to 100 μm.

[0052] Reference Figure 5 As shown, after plates A and B are fabricated, step S13 is executed, in which plate A is flipped over (with the first metal layer 4 of plate A facing the first insulating layer 2 of plate B) and bonded to plate B. "The first surface 11 of the glass substrate 1 and the first metal layer 4 on the support plate 41 are bonded to each other" specifically refers to bonding the first metal layer 4 to the first insulating layer 2 of the first surface 11. Specifically, the first metal layer 4 is deposited on the first insulating layer 2 of the first surface 11 of the glass substrate 1, so that the first end of the through-hole 10 is covered by the first metal layer 4. The glass substrate 1 and the first metal layer 4 can be bonded together by thermo-pressing, allowing the first metal layer 4 and the first insulating layer 2 to be bonded together, either directly or through adhesive.

[0053] Reference Figure 6 As shown, in step S14, a first metal layer 4 is electroplated into the through hole 10. Specifically, the bonded A plate and B plate are placed in an electroplating device. The first metal layer 4 exposed in the through hole 10 serves as the cathode. After energizing, metal particles are deposited on the first metal layer 4 until the first window 20 and the through hole 10 are completely filled.

[0054] Continue to refer to Figure 6In step S15, after the decomposable adhesive 42 decomposes, the support plate 41 separates from the B plate, while the first metal layer 4 remains on the B plate, forming a B plate covered with the first metal layer 4. The through-hole 10 and the first window 20 are filled with two metal layers, and the second metal layer 5 is in contact with the first metal layer 4. The second metal layer 5 can be a copper plating layer. In this embodiment, the decomposable adhesive 42 is a pyrolytic adhesive; therefore, heating decomposes the pyrolytic adhesive, causing the support plate 41 and the B plate to debond.

[0055] Continue to refer to Figure 6 The first metal layer 4 is patterned to form the first circuit. Specifically, copper layer etching can be performed using photoresist technology (coating / exposure / development). Each via 10 is covered with the first circuit, and gaps are etched between the first circuits to isolate them from each other.

[0056] Reference Figure 7 As shown, in step S16, "depositing metal onto the second surface 12 of the glass substrate 1" specifically refers to depositing metal onto the second insulating layer 3 on the second surface 12. Specifically, the substrate (B-plate + patterned first metal layer 4 + second metal layer 5) processed in step S15 is flipped so that its second surface 12 faces upwards, and the second insulating layer 3 is coated onto the first surface 11 of the glass substrate 1. The second insulating layer 3 is then processed to form a second window 30 that is aligned and connected to the multiple vias 10. The second insulating layer 3 is a photosensitive polyimide layer applied to the glass substrate 1 using a PSPI coating process; patterning is performed using exposure / development technology to form the second window 30, with the vias 10 and the second metal layer 5 exposed through the second window 30. In other embodiments, the second insulating layer 3 can also be silicon dioxide, silicon oxynitride, poly(p-phenylenebenzodioxazole), PID materials, etc. The thickness of the second insulating layer 3 is 5 nm to 100 μm.

[0057] Continue to refer to Figure 7 Ti / Cu is sputtered onto the second insulating layer 3, followed by deposition (e.g., electroplating) of a metal layer to form a third metal layer 6. The third metal layer 6 fills the second window 30 and covers the second insulating layer 3. Subsequently, the third metal layer 6 is patterned to form second lines, ultimately obtaining a glass through-hole substrate product. Specifically, copper layer etching can be performed using photoresist technology (coating / exposure / development). Each through-hole 10 has a second line on its second metal layer 5, and gaps are etched between the second lines to isolate them from each other.

[0058] Figure 8 Another glass through-hole substrate is shown, which is related to Figure 1The only difference between the glass through-hole substrates shown is the fabrication process and shape of the third metal layer 6; otherwise, they are basically the same. The third metal layer 6 includes bumps 61, which are formed on the second metal layer 5 within the through-hole 10 using a metal ball implantation process. Example 2 The structure of the glass through-hole substrate in this embodiment is the same as that in Embodiment 1, the only difference being the preparation method.

[0059] See Figure 9 As shown, the method for preparing the glass through-hole substrate in this embodiment includes the following steps: S21. Two glass substrates 1 with through holes 10 are provided. Each glass substrate 1 has an opposite first surface 11 and a second surface 12. The through hole 10 extends from the first surface 11 to the second surface 12. S22. A support plate 41 is provided, and a first metal layer 4 is respectively coated on two opposite surfaces of the support plate 41 by a biodegradable adhesive 42. S23. Two glass substrates 1 are bonded to the support plate 41, wherein one surface of the support plate 41 is bonded to the first surface 11 of one glass substrate 1, and the other surface of the support plate 41 is bonded to the first surface 11 of another glass substrate 1; the first end of the through hole 10 of each glass substrate is covered by a first metal layer 4. S24. Deposit metal onto the first metal layer 4 exposed in the via 10 of each glass substrate 1 to form a second metal layer 5, and fill the via 10 with the second metal layer 5. S25. Decompose the decomposable adhesive 42 to separate the support plate 41 from the first metal layer 4 on the two glass substrates 1, and at the same time form two glass substrates 1 covered with the first metal layer 4. S26. Deposit metal onto the second surface 12 of each glass substrate 1 to form a third metal layer 6, which covers the second end of the through-hole 10. Two glass through-hole substrate products are obtained simultaneously.

[0060] The differences between the steps and those in Example 1 are as follows: the preparation of plate A and the simultaneous bonding of plate A to two plates B are the same. For example, the preparation of glass substrate 1 (plate A) in step S21 is the same as step S11 in Example 1; the preparation of the third metal layer 6 in step S26 is the same as step S16 in Example 1.

[0061] Specifically, refer to Figure 10 Step S22 specifically includes: Step S221: Clean the support plate 41; Step S222: Apply or attach biodegradable adhesive 42 to both surfaces of the support plate 41; Step S223: Apply a first metal layer 4 to each of the two biodegradable adhesives 42.

[0062] Reference Figure 11 In step S23, a B-plate is first bonded to one surface of an A-plate, and then a second B-plate is inverted and bonded to the other surface of the A-plate. The two bonded B-plates and one A-plate are placed in an electroplating apparatus, and simultaneously a second metal layer 5 is deposited in the first through-hole 10 and the first window 20 of the two B-plates, forming a layer in contact with the corresponding first metal layer 4. The bonding process can be the same as in Example 1.

[0063] Continue to refer to Figure 11 The two B plates and one A plate are debonded, and the specific process is the same as in Example 1. The decomposable adhesive 42 on both sides of the support plate 41 loses its adhesiveness, and the support plate 41 can be removed from the two A plates, and the two A plates covered with the first metal layer 4 are separated from each other; then the third metal layer 6 is applied according to the same process, specifically the same as step S16 in Example 1.

[0064] The preparation process in Example 2 further improves production efficiency.

[0065] Figure 12 A microscope image of the glass through-hole substrate prepared according to the embodiment is shown, with gray representing the metal layer. It can be seen that the through-hole 10 is completely filled with the metal layer, achieving circuit connectivity on both the top and bottom sides. Furthermore, additional layers can be stacked on both surfaces, with additional layers on both sides.

[0066] The above-described method for preparing a glass through-hole substrate involves placing a first metal layer 4 onto a glass substrate 1 using a support plate 41. The first metal layer 4 exposed within the through-hole 10 serves as the substrate, and a second metal layer 5 is deposited on it to achieve metallization within the through-hole 10. Subsequently, the support plate 41 is removed from the glass substrate 1, and a third metal layer 6 is deposited on the second metal layer 5 exposed on the second surface 12 to achieve electrical connection between the two sides of the substrate. This method enables metallization of the through-hole 10 with a high aspect ratio, reduces the probability of glass substrate 1 breakage, and thus improves the yield rate. It eliminates the need for the step of sputtering metal atoms within the through-hole 10, reducing the process difficulty, simplifying the process flow, and lowering production costs.

[0067] Furthermore, providing back support for the glass substrate 1 during fabrication increases yield and solves the problem of fragile thin glass (thickness less than 400µm) during the process. Adding an insulating layer to the glass substrate 1 prevents peeling during subsequent thermal shock testing after direct metal sputtering onto the glass surface. Employing a bottom copper plating process, especially for high aspect ratio TGV vias 10 (AR>10), saves sputtering steps and achieves higher aspect ratios without requiring increased equipment capabilities (higher-order sputtering / atomic layer deposition), thus avoiding a sharp increase in production costs. It also solves problems such as core-encapsulated holes or difficulties in bridging due to excessively large apertures in conventional bridging electroplating processes. The non-common cathode design addresses the challenge of achieving different thicknesses and patterns on both sides of the glass and facilitates subsequent stacking of glass of varying thicknesses, increasing product design flexibility. Conventional etching, reverse electroplating, or brushing processes are sufficient, eliminating the need for chemical polishing and preventing glass cracking and breakage. Simultaneous production of both substrates allows for the simultaneous fabrication of different thicknesses and patterns.

[0068] As indicated in this specification and claims, the terms "comprising" and "including" only indicate the inclusion of expressly identified steps and elements, and these steps and elements do not constitute an exclusive list; the method or apparatus may also include other steps or elements. The term "and / or" as used herein includes any combination of one or more of the associated listed items.

[0069] It can be further understood that in this disclosure, "multiple" refers to two or more, and other quantifiers are similar.

[0070] It should be noted that, unless otherwise specified, when a feature is referred to as "fixed" or "connected" to another feature, it can be directly fixed or connected to the other feature, or it can be indirectly fixed or connected to the other feature.

[0071] It is further understood that the terms "first," "second," etc., are used to describe various types of information, but this information should not be limited to these terms. These terms are only used to distinguish information of the same type from one another, and do not indicate a specific order or degree of importance. In fact, the expressions "first," "second," etc., are completely interchangeable. For example, without departing from the scope of this disclosure, first information can also be referred to as second information, and similarly, second information can also be referred to as first information.

[0072] The above embodiments are merely illustrative of the technical concept and features of the present invention, and are preferred embodiments. Their purpose is to enable those skilled in the art to understand the content of the present invention and implement it accordingly, and they should not be construed as limiting the scope of protection of the present invention. All equivalent transformations or modifications made according to the principles of the present invention should be covered within the scope of protection of the present invention.

Claims

1. A method for preparing a glass through-hole substrate, characterized in that, The method comprises the following steps: S1, providing a glass substrate with a through hole, the glass substrate having opposite first and second surfaces, the through hole penetrating from the first surface to the second surface; S2, providing a support plate, the support plate being provided with a first metal layer by a decomposable adhesive; S3, bonding the first surface of the glass substrate and the first metal layer on the support plate to each other, so that the first end of the through hole is covered by the first metal layer; S4, depositing metal on the first metal layer exposed in the through hole to form a second metal layer, the through hole being filled with the second metal layer; S5, decomposing the decomposable adhesive to separate the support plate from the first metal layer; S6, depositing metal on the second surface of the glass substrate to form a third metal layer, the third metal layer covering the second end of the through hole; The second metal layer in the through hole communicates the first metal layer and the third metal layer.

2. The production method according to claim 1, characterized by, In step S1, the aspect ratio of the through hole is 1-50, and the aperture is 2-200 μm; the first and / or second surface of the glass substrate comprises a patterned insulating layer provided thereon, the insulating layer being provided with a window, the through hole being exposed at the window, and the thickness of the insulating layer being 5 nm-100 μm; In step S3, the first metal layer is bonded to the insulating layer on the first surface, and the window in the insulating layer is filled with the second metal layer; In step S6, metal is deposited on the insulating layer on the second surface of the glass substrate, and the window in the insulating layer is filled with the third metal layer.

3. The preparation method according to claim 2, characterized in that, The insulating layer comprises one or more of silicon dioxide, silicon oxynitride, poly-p-phenylene benzobisoxazole, PID material, and polyimide.

4. The method of claim 1, wherein, In step S2, the decomposable adhesive comprises pyrolytic glue, and in step S5, the pyrolytic glue is decomposed by heating.

5. The preparation method according to claim 1, characterized in that, In step S2, the decomposable adhesive is coated on the support plate; or the decomposable adhesive is located on an adhesive tape, and the adhesive tape is attached to the support plate.

6. The method of claim 1, wherein, In step S2, the thickness of the support plate is 100 um-2000 um, the support plate comprises one or more of a metal plate and a glass fiber reinforced epoxy resin laminate, and / or the first metal layer is deposited on the support plate or a decomposable adhesive layer pressed on the support plate, and the thickness of the first metal layer is 2 um-100 um.

7. The preparation method according to claim 1, characterized in that, In step S3, the glass substrate and the first metal layer are bonded by hot pressing.

8. The method of claim 1, wherein, In step S4, the first metal layer is electroplated in the through hole; and in step S6, the third metal layer is electroplated on the second metal layer in the through hole.

9. The method of claim 1, wherein, In step S5, the first metal layer is patterned to form a first circuit; In step S6, the third metal layer covers the second surface, and the third metal layer is patterned to form a second circuit, thereby obtaining a glass through hole substrate; or, a bump is formed on the second metal layer in the through hole by electroplating or ball bumping, thereby obtaining a glass through hole substrate.

10. The method of claim 1, wherein, In step S2, a first metal layer is deposited on both opposite surfaces of the support plate; in step S3, one of said glass substrates is bonded to the first metal layer on each of the two surfaces of the support plate.

11. A glass via substrate, characterized by, The production method according to any one of claims 1 to 10. The production method according to any one of claims 1 to 10.

Citation Information

Patent Citations

  • Manufacturing method of adapter plate comprising high-aspect-ratio TSV (through silicon vias)

    CN104952789A

  • Through glass via metallic fabrication method

    CN106409758A

  • Wafer level glass through hole metallization method

    CN120600693A