Wax melting reagent and wax melting method for indium phosphide substrate and indium phosphide epitaxial wafer
By using a compound wax-removing agent consisting of N-methylpyrrolidone, cyclohexanone, and fluorocarbon nonionic surfactants, along with specific cleaning steps, the problem of surface contamination on indium phosphide substrates was solved, providing high-quality indium phosphide epitaxial wafers for optical fiber communication and integrated circuits.
Patent Information
- Application Number
- CN202511991340.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-12-26
- Publication Date
- 2026-03-20
AI Technical Summary
Existing wax removal reagents for indium phosphide substrates are not effective enough in removing surface contaminants, especially organic wax contaminants and metal ion contaminants, which affect the quality of epitaxial layers and chips.
A compound wax-removing agent consisting of N-methylpyrrolidone, cyclohexanone, and fluorocarbon nonionic surfactants is used, combined with hot immersion stripping, warm immersion rinsing, ultrasonic cleaning, and deionization cleaning steps, to thoroughly remove organic wax and reduce metal ion contamination through synergistic effects.
This technology enables efficient removal of organic wax and metal ion contamination from the surface of indium phosphide substrates, increases the dislocation density of the epitaxial layer, and provides high-quality indium phosphide epitaxial wafers for optical fiber communication and integrated circuits.
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Figure CN121700522A_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The application belongs to the technical field of semiconductor materials, and particularly relates to a wax removal reagent for an indium phosphide substrate, a wax removal method and an indium phosphide epitaxial wafer. BACKGROUND
[0002] Indium phosphide (InP) substrate is an important compound semiconductor material, has high saturated electric field drift speed, excellent heat conductivity and strong radiation resistance, and is a preferred substrate material in the field of optical fiber communication.
[0003] After a single crystal ingot is obtained by single crystal growth and slicing to obtain an indium phosphide substrate, the indium phosphide substrate needs to be sequentially ground and polished. The grinding can remove the surface damage layer after slicing and reduce the surface roughness. Chemical mechanical polishing (CMP) is a process for obtaining an atomically smooth surface through mechanical and chemical synergistic action to meet the flatness requirement of the starting surface for epitaxial growth. Before epitaxial growth, the surface contamination of the indium phosphide substrate also needs to be removed to reduce the adverse effects on the quality of the epitaxial layer and the chip in subsequent epitaxial growth.
[0004] The surface contamination of the indium phosphide substrate includes organic wax contamination. The organic wax contamination is caused by the use of organic wax such as paraffin wax, resin wax and microcrystalline wax to temporarily bond and fix the indium phosphide substrate on the polishing pad during the polishing process of the indium phosphide substrate to avoid displacement or damage of the indium phosphide substrate during polishing. Therefore, after polishing is completed, the surface of the indium phosphide substrate will be contaminated by the residual organic wax. These organic waxes must be completely removed before epitaxial growth to reduce the dislocation density in unit area and improve the crystal quality of the epitaxial layer. At the same time, it is also necessary to avoid the contamination of metal ions on the surface of the indium phosphide substrate to reduce the adverse effects on the electrical properties of the epitaxial layer of the indium phosphide substrate and the constructed chip. However, the current wax removal reagent for the indium phosphide (InP) substrate has poor effect on removing the surface contamination of the indium phosphide substrate. SUMMARY
[0005] In view of this, the application provides a wax removal reagent for an indium phosphide substrate, a wax removal method and an indium phosphide epitaxial wafer to solve the technical problem of low effect of the current wax removal reagent for the indium phosphide substrate on removing the surface contamination of the indium phosphide substrate.
[0006] The first aspect of the application provides a wax removal reagent for an indium phosphide substrate, which comprises N-methylpyrrolidone, cyclohexanone and fluorocarbon non-ionic surfactant.
[0007] Preferably, the wax removal reagent for the indium phosphide substrate comprises 80-95 parts by volume of N-methylpyrrolidone, 5-15 parts by volume of cyclohexanone and 0.1-1 part by volume of fluorocarbon non-ionic surfactant.
[0008] Preferably, the waxing agent for the indium phosphide substrate comprises, in volume parts: 85 volume parts of N-methylpyrrolidone, 14.5 volume parts of cyclohexanone, and 0.5 volume parts of fluorocarbon non-ionic surfactant.
[0009] The second aspect of the present application provides a waxing method for an indium phosphide substrate, comprising the following steps:
[0010] The hot-dip stripping step of the indium phosphide substrate: the polished indium phosphide substrate is immersed and cleaned in the waxing agent for the indium phosphide substrate of the first aspect heated to 75-85°C to obtain a hot-dip stripped indium phosphide substrate;
[0011] The warm-dip rinsing step of the indium phosphide substrate: the hot-dip stripped indium phosphide substrate is immersed and rinsed in another portion of the waxing agent for the indium phosphide substrate of the first aspect heated to 40-50°C to obtain a warm-dip rinsed indium phosphide substrate;
[0012] The ultrasonic cleaning step of the indium phosphide substrate: the warm-dip rinsed indium phosphide substrate is ultrasonically cleaned in N-methylpyrrolidone to obtain an ultrasonic cleaned indium phosphide substrate;
[0013] The displacement cleaning step of the indium phosphide substrate: the ultrasonic cleaned indium phosphide substrate is ultrasonically cleaned in isopropyl alcohol to obtain a displacement cleaned indium phosphide substrate;
[0014] The deionized water cleaning step of the indium phosphide substrate: the displacement cleaned indium phosphide substrate is ultrasonically cleaned in deionized water to obtain a deionized water cleaned indium phosphide substrate;
[0015] The drying step of the indium phosphide substrate: the deionized water cleaned indium phosphide substrate is blown dry with nitrogen to obtain a decontaminated dried indium phosphide substrate.
[0016] Preferably, in the hot-dip stripping step of the indium phosphide substrate, the immersion and cleaning time is 15-30 min.
[0017] Preferably, in the warm-dip rinsing step of the indium phosphide substrate, the immersion and cleaning time is 1-5 min.
[0018] Preferably, in the ultrasonic cleaning step of the indium phosphide substrate, the ultrasonic cleaning time is 1-5 min and the temperature is room temperature.
[0019] Preferably, in the displacement cleaning step of the indium phosphide substrate, the ultrasonic power is 0.1-0.5 W / cm 2 and the time is 1-5 min.
[0020] Preferably, in the deionized water cleaning step of the indium phosphide substrate, the ultrasonic power is 0.1-0.5 W / cm 2 and the time is 1-5 min.
[0021] The third aspect of the present application provides an InP epitaxial wafer, which is obtained by epitaxial growth of the dried InP substrate obtained by the wax removal method of the second aspect.
[0022] Preferably, the dislocation density of the epitaxial layer of the InP epitaxial wafer is less than 1000 / cm 2 .
[0023] Preferably, the epitaxial growth process is selected from at least one of vapor phase epitaxy (VPE), molecular beam epitaxy (MBE), liquid phase epitaxy (LPE), chemical beam epitaxy (CBE), and atomic layer deposition (ALD).
[0024] Preferably, the vapor phase epitaxy (VPE) includes metal organic vapor phase epitaxy (MOCVD).
[0025] Compared with the prior art, the wax removal reagent for InP substrate, the wax removal method for InP substrate and the InP epitaxial wafer provided by the present application at least have the following beneficial effects:
[0026] 1. The wax removal reagent for InP substrate provided by the present application can promote the rapid spreading and penetration of the wax removal reagent into the interface between the organic wax layer and the InP by the mutual cooperation of N-methylpyrrolidone, cyclohexanone and fluorocarbon non-ionic surfactant, effectively penetrate and swell the organic wax layer including various high molecular polymers, relax and untangle them, and at the same time use strong polarity to achieve efficient and complete removal of the polymer enhanced polishing wax. The specific fluorocarbon non-ionic surfactant reduces the risk of metal ion pollution and improves the effect of removing the pollution on the surface of the InP substrate.
[0027] 2. The wax removal method for InP substrate provided by the present application avoids the recondensation of the saturated wax liquid on the surface of the InP substrate after the heat immersion stripping treatment in the warm rinsing process by setting the temperature in the heat immersion stripping and warm immersion rinsing steps, thereby further improving the effect of removing the pollution on the surface of the InP substrate. By controlling the low ultrasonic power and time in the ultrasonic cleaning, displacement cleaning and deionized cleaning steps, the risk of damage to the InP substrate due to ultrasonic cavitation is reduced, and at the same time, the particle residual pollution on the surface of the substrate is removed.
[0028] 3. The InP epitaxial wafer provided by the present application has a dislocation density of less than 1000 / cm 2 , which is a high-quality InP epitaxial wafer and can provide high-quality substrate materials for optical fiber communication, microwave communication or integrated circuits. BRIEF DESCRIPTION OF DRAWINGS
[0029] In order to more clearly illustrate the technical solutions in the specific embodiments or the prior art of the present application, the following will briefly introduce the drawings needed to be used in the specific embodiments or the prior art description. Obviously, the drawings described below are some embodiments of the present application, and for those skilled in the art, other drawings can also be obtained without creative labor on the basis of these drawings.
[0030] Figure 1 A flowchart of a waxing method of an indium phosphide substrate provided in Embodiment 1 of the present application. DETAILED DESCRIPTION
[0031] The present application provides a waxing reagent and a waxing method of an indium phosphide substrate and an indium phosphide epitaxial wafer, which are used to solve the technical problem that the effect of removing the surface contamination of the indium phosphide substrate is low in the prior art.
[0032] The technical solutions of the present application will be described clearly and completely below with reference to the drawings. Obviously, the described embodiments are some embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all the other embodiments obtained by those skilled in the art without creative labor fall within the protection scope of the present application.
[0033] Embodiment 1
[0034] The present embodiment provides a waxing method of an indium phosphide substrate, and a flowchart thereof is shown in Figure 1 The present embodiment provides a waxing method of an indium phosphide substrate, and a flowchart thereof is shown in
[0035] The configuration step of the waxing reagent of the indium phosphide substrate:
[0036] According to the volume ratio of 85:14.5:0.5, the weighed N-methyl pyrrolidone, cyclohexanone and fluorocarbon nonionic surfactant are stirred and mixed uniformly to configure the waxing reagent of the indium phosphide substrate.
[0037] The hot immersion stripping step of the indium phosphide substrate:
[0038] The configured waxing reagent of the indium phosphide substrate is heated to 78°C, and then the 4-inch indium phosphide substrate with polymer enhanced polishing wax after polishing is soaked and cleaned for 20 minutes, and the temperature is kept constant during the soaking process, so as to obtain the hot immersion stripped indium phosphide substrate.
[0039] The warm immersion rinsing step of the indium phosphide substrate:
[0040] The configured waxing reagent of the indium phosphide substrate is heated to 45°C, and then the hot immersion stripped indium phosphide substrate is soaked and cleaned for 4 minutes, and the temperature is kept constant during the soaking process, so as to obtain the warm immersion rinsed indium phosphide substrate.
[0041] Ultrasonic cleaning step of the InP substrate:
[0042] The warm soak rinsed InP substrate was placed in N-methyl pyrrolidone and ultrasonically cleaned for 3 minutes at a power of 0.3 W / cm 2 to obtain an ultrasonically cleaned InP substrate.
[0043] Displacement cleaning step of the InP substrate:
[0044] The ultrasonically cleaned InP substrate was placed in isopropyl alcohol and ultrasonically cleaned for 3 minutes at a power of 0.3 W / cm 2 to displace the residual waxing reagent of the InP substrate to obtain a displacement cleaned InP substrate.
[0045] Deionized water cleaning step of the InP substrate:
[0046] The displacement cleaned InP substrate was placed in deionized water and ultrasonically cleaned for 3 minutes at a power of 0.3 W / cm 2 to obtain a deionized water cleaned InP substrate.
[0047] Drying step of the InP substrate:
[0048] The deionized water cleaned InP substrate was dried using an inert gas, nitrogen, to obtain a decontaminated dried InP substrate.
[0049] Comparative Example 1
[0050] This comparative example provides a waxing method of an InP substrate comprising the following steps:
[0051] Hot soak stripping step of the InP substrate:
[0052] The N-methyl pyrrolidone was heated to 78 °C and the 4 inch InP substrate, after polishing, with polymer enhanced polishing wax was immersed and cleaned for 20 minutes while maintaining a constant temperature to obtain a hot soak stripped InP substrate.
[0053] Warm soak rinsing step of the InP substrate:
[0054] The N-methyl pyrrolidone was heated to 45 °C and the hot soak stripped InP substrate was immersed and cleaned for 4 minutes while maintaining a constant temperature to obtain a warm soak rinsed InP substrate.
[0055] Ultrasonic cleaning step of the InP substrate:
[0056] The warm soak rinsed InP substrate was placed in N-methyl pyrrolidone and ultrasonically cleaned for 3 minutes at a power of 0.3 W / cm 2 to obtain an ultrasonically cleaned InP substrate.
[0057] Displacement cleaning step of indium phosphide substrate:
[0058] The ultrasonically cleaned indium phosphide substrate was placed in isopropyl alcohol and ultrasonically cleaned for 3 minutes at a power of 0.3 W / cm 2 to displace the waxing reagent remaining on the indium phosphide substrate to obtain a displacement cleaned indium phosphide substrate.
[0059] Deionized cleaning step of indium phosphide substrate:
[0060] The displacement cleaned indium phosphide substrate was placed in deionized water and ultrasonically cleaned for 3 minutes at a power of 0.3 W / cm 2 to obtain a deionized cleaned indium phosphide substrate.
[0061] Drying step of indium phosphide substrate:
[0062] The deionized cleaned indium phosphide substrate was dried using an inert gas, nitrogen, to obtain a decontaminated dried indium phosphide substrate.
[0063] Comparative Example 2
[0064] This comparative example provides a waxing method of an indium phosphide substrate comprising the following steps:
[0065] Configuration step of waxing reagent for indium phosphide substrate:
[0066] A weighed amount of N-methyl pyrrolidone and acetone were mixed by stirring in a volume ratio of 1 : 1 to configure a waxing reagent for indium phosphide substrate.
[0067] Hot dip stripping step of indium phosphide substrate:
[0068] The configured waxing reagent for indium phosphide substrate was heated to 78 °C and a 4-inch indium phosphide substrate after polishing with polymer-enhanced polishing wax was immersed and cleaned for 20 minutes in the heated waxing reagent, maintaining a constant temperature during the immersion process, to obtain a hot dip stripped indium phosphide substrate.
[0069] Warm dip rinsing step of indium phosphide substrate:
[0070] The configured waxing reagent for indium phosphide substrate was heated to 45 °C and the hot dip stripped indium phosphide substrate was immersed and cleaned for 4 minutes in the heated waxing reagent, maintaining a constant temperature during the immersion process, to obtain a warm dip rinsed indium phosphide substrate.
[0071] Ultrasonic cleaning step of indium phosphide substrate:
[0072] The warm dip rinsed indium phosphide substrate was placed in N-methyl pyrrolidone and ultrasonically cleaned for 3 minutes at a power of 0.3 W / cm 2 to obtain an ultrasonically cleaned indium phosphide substrate.
[0073] Displacement cleaning step of indium phosphide substrate:
[0074] The ultrasonically cleaned indium phosphide substrate was placed in isopropanol at a concentration of 0.3 W / cm². 2 The substrate was ultrasonically cleaned for 3 minutes to replace the residual wax-removing agent in the indium phosphide substrate, resulting in a replaced and cleaned indium phosphide substrate.
[0075] Deionization cleaning steps for indium phosphide substrates:
[0076] The indium phosphide substrate, after replacement cleaning, was placed in deionized water at a concentration of 0.3 W / cm². 2 The substrate was ultrasonically cleaned for 3 minutes to obtain a deionized indium phosphide substrate.
[0077] Drying steps for indium phosphide substrate:
[0078] The deionized indium phosphide substrate was dried using inert nitrogen gas to obtain a dry indium phosphide substrate free of contaminants.
[0079] Comparative Example 3
[0080] This comparative example provides a method for dewaxing an indium phosphide substrate, including the following steps:
[0081] Hot-dip stripping step for indium phosphide substrates:
[0082] A commercially available indium phosphide substrate inorganic cleaning agent was heated to 78°C. A 4-inch indium phosphide substrate, which had been polished and coated with polymer-enhanced polishing wax, was then immersed in the cleaning solution for 20 minutes while maintaining a constant temperature during the immersion process. This resulted in a hot-dip stripped indium phosphide substrate.
[0083] Warm immersion rinsing steps for indium phosphide substrates:
[0084] The commercially available indium phosphide substrate inorganic cleaning agent was heated to 45°C, and then the hot-dip stripped indium phosphide substrate was immersed and cleaned for 4 minutes. The temperature was kept constant during the immersion process to obtain a warm-dip rinsed indium phosphide substrate.
[0085] Ultrasonic cleaning steps for indium phosphide substrates:
[0086] The indium phosphide substrate, after being warm-washed, was placed in N-methylpyrrolidone at a concentration of 0.3 W / cm². 2 The substrate was ultrasonically cleaned for 3 minutes to obtain an ultrasonically cleaned indium phosphide substrate.
[0087] Replacement cleaning steps for indium phosphide substrate:
[0088] The ultrasonically cleaned indium phosphide substrate was placed in isopropanol at a concentration of 0.3 W / cm². 2 The substrate was ultrasonically cleaned for 3 minutes to replace the residual commercially available indium phosphide substrate inorganic cleaning agent and N-methylpyrrolidone, resulting in a replaced and cleaned indium phosphide substrate.
[0089] Deionization cleaning steps for indium phosphide substrates:
[0090] The indium phosphide substrate, after replacement cleaning, was placed in deionized water at a concentration of 0.3 W / cm². 2 The substrate was ultrasonically cleaned for 3 minutes to obtain a deionized indium phosphide substrate.
[0091] Drying steps for indium phosphide substrate:
[0092] The deionized indium phosphide substrate was dried using inert nitrogen gas to obtain a dry indium phosphide substrate free of contaminants.
[0093] Experimental Example 1
[0094] This experimental example tests the effectiveness of the wax removal method for indium phosphide substrates provided in Example 1 and Comparative Examples 1-3 in removing surface contaminants from indium phosphide substrates.
[0095] The tests on the effectiveness of removing surface contaminants from indium phosphide substrates included: macroscopic observation of the dry indium phosphide substrates provided in Example 1 and Comparative Examples 1-3; testing of CH characteristic peaks using Fourier transform infrared spectroscopy (FTIR); and testing of residual metal (Fe) using total reflectance X-ray fluorescence spectroscopy (TXRF). Simultaneously, epitaxial layers were grown on the dry indium phosphide substrates provided in Example 1 and Comparative Examples 1-3 using metal-organic vapor phase epitaxy (MOCVD), and the quality of the epitaxial layers was analyzed by dislocation density analysis. The test results are shown in Table 1.
[0096] Table 1: Effect of removing surface contaminants from indium phosphide substrates
[0097]
[0098] As shown in Table 1, the performance test results indicate that, in Comparative Example 3, the dewaxing method for the indium phosphide substrate, while effectively decomposing and removing organic wax using a commercially available inorganic cleaning agent, easily introduces significant metal contamination, resulting in poor removal of surface contamination. In Comparative Example 1, the dewaxing method for the indium phosphide substrate, using only N-methylpyrrolidone, is ineffective in removing organic wax and metal ion contamination such as iron, leaving organic wax residue on the substrate. The infrared spectrum also shows CH characteristic peaks, indicating a high concentration of surface metal residues and a large dislocation density in the epitaxially grown layer. In Comparative Example 2, the dewaxing method for the indium phosphide substrate, using a mixture of N-methylpyrrolidone and acetone, macroscopically removes organic wax residue from the substrate, but the infrared spectrum still shows weak CH characteristic peaks, indicating that some organic wax was not completely removed.
[0099] The experimental data above show that inorganic cleaning agents easily introduce metal contamination; while N-methylpyrrolidone alone, or a combination of N-methylpyrrolidone and acetone as a wax-removing agent, is difficult to completely remove organic wax residue. This is because the organic wax residue on the indium phosphide substrate is a polymer-reinforced polishing wax, and N-methylpyrrolidone and acetone are not effective at removing the polymers added to the polymer-reinforced polishing wax. However, the wax-removing method for the indium phosphide substrate provided in Example 1 of this application uses a combination of N-methylpyrrolidone, cyclohexanone, and a fluorocarbon nonionic surfactant as a wax-removing agent. During the wax-removing process, N-methylpyrrolidone effectively dissolves the grease and paraffin components in the wax due to its strong polarity, while cyclohexanone has extremely strong swelling and penetration capabilities for various polymers, especially acrylates and epoxy polymers. The fluorocarbon nonionic surfactant can greatly reduce the surface tension of the wax-removing agent, allowing it to spread rapidly. It penetrates into the microscopic gaps at the interface between the organic wax layer and indium phosphide, achieving "peel-off" cleaning. During the wax removal process, N-methylpyrrolidone, cyclohexanone, and the fluorocarbon nonionic surfactant work synergistically. On one hand, they promote the rapid spread and penetration of the wax removal agent into the interface between the organic wax layer and indium phosphide. On the other hand, they effectively penetrate and swell the organic wax layer, including various polymers, causing it to loosen and untangle. Furthermore, the strong polarity of N-methylpyrrolidone enables efficient and thorough removal of the polymer-reinforced polishing wax. Simultaneously, the fluorocarbon surfactant exhibits high chemical stability, reducing the risk of introducing metal ion impurities. Therefore, the wax removal agent used in the indium phosphide substrate wax removal method provided in Example 1 of this application, through the compounding of N-methylpyrrolidone, cyclohexanone, and the fluorocarbon nonionic surfactant, can overcome the current shortcomings of low efficiency in removing surface contaminants from indium phosphide substrates.
[0100] The above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application.
Claims
1. A wax-removing agent for an indium phosphide substrate, characterized in that, include: N-methylpyrrolidone, cyclohexanone, and fluorocarbon nonionic surfactants.
2. The wax-removing agent for an indium phosphide substrate according to claim 1, characterized in that, The product, by volume, includes: 80-95 parts N-methylpyrrolidone, 5-15 parts cyclohexanone, and 0.1-1 parts fluorocarbon nonionic surfactant.
3. A method for dewaxing an indium phosphide substrate, characterized in that, Includes the following steps; Preparation steps of wax removal agent for indium phosphide substrate: N-methylpyrrolidone, cyclohexanone and fluorocarbon nonionic surfactant are mixed evenly to obtain wax removal agent for indium phosphide substrate; Hot-dip stripping step of indium phosphide substrate: The polished indium phosphide substrate is immersed and cleaned in the wax-removing agent of indium phosphide substrate according to any one of claims 1-2 heated to 75~85°C to obtain the hot-dip stripped indium phosphide substrate. The warm immersion rinsing step of the indium phosphide substrate: The indium phosphide substrate that has been hot-dip stripped is placed in another batch of wax-removing agent of the indium phosphide substrate according to any one of claims 1-2 heated to 40~50°C for warm immersion rinsing to obtain the warm immersion rinsing indium phosphide substrate. Ultrasonic cleaning steps for indium phosphide substrates: The indium phosphide substrate that has been warm-washed is placed in N-methylpyrrolidone for ultrasonic cleaning to obtain an ultrasonically cleaned indium phosphide substrate. Displacement cleaning step of indium phosphide substrate: The ultrasonically cleaned indium phosphide substrate is placed in isopropanol for ultrasonic cleaning to obtain a displacement-cleaned indium phosphide substrate. Deionization cleaning step for indium phosphide substrate: The indium phosphide substrate that has been replaced and cleaned is placed in deionized water for ultrasonic cleaning to obtain a deionized indium phosphide substrate. Drying steps for indium phosphide substrates: The deionized indium phosphide substrate is dried with nitrogen gas to obtain a dry indium phosphide substrate free of contaminants.
4. The method for dewaxing an indium phosphide substrate according to claim 3, characterized in that, In the hot-dip stripping step of the indium phosphide substrate, the soaking and cleaning time is 15-30 minutes.
5. The method for dewaxing an indium phosphide substrate according to claim 3, characterized in that, In the warm immersion rinsing step of the indium phosphide substrate, the immersion cleaning time is 1~5 minutes.
6. The method for dewaxing an indium phosphide substrate according to claim 3, characterized in that, In the ultrasonic cleaning step of the indium phosphide substrate, the ultrasonic cleaning time is 1~5 minutes and the temperature is room temperature.
7. The method for dewaxing an indium phosphide substrate according to claim 3, characterized in that, In the replacement cleaning step of the indium phosphide substrate, the ultrasonic power is 0.1~0.5W / cm. 2 The time is 1 to 5 minutes.
8. The method for dewaxing an indium phosphide substrate according to claim 3, characterized in that, In the deionization cleaning step of the indium phosphide substrate, the ultrasonic power is 0.1~0.5W / cm. 2 The time is 1 to 5 minutes.
9. An indium phosphide epitaxial wafer, characterized in that, It is obtained by epitaxial growth on a dry indium phosphide substrate obtained by the wax removal method according to any one of claims 3-8.
10. An indium phosphide epitaxial wafer, characterized in that, The dislocation density of the epitaxial layer of the indium phosphide epitaxial wafer is less than 1000 / cm². 2 .